A miniature high-precision ceramic thin film resistor-capacitor dual-function element and its manufacturing method

Abstract

The present invention discloses a miniature high-precision ceramic thin-film resistor-capacitor dual-function element and a manufacturing method thereof, relating to the technical field of integrated electronic components. The resistor-capacitor dual-function element uses magnetron vacuum sputtering technology to sequentially deposit a TaN film, a TiW film, and an Au film on a grain boundary layer dielectric ceramic substrate. The required TaN film is retained as a resistor film by etching, and the square resistance of the resistor film is precisely adjusted in combination with a heat treatment process to ultimately form a refined substrate with integrated resistors and capacitors. A single resistor-capacitor element is obtained through a scribing process, and precise adjustment of the electrostatic capacitance is achieved by controlling the thickness of the scribing blade. The single resistor-capacitor element has the characteristics of high-precision resistance and capacitance, miniaturization, low parasitic parameters, and high reliability, and can be widely used in microwave communications, radio frequency modules, and other high-performance electronic circuits. The invention solves the problem that existing resistors and capacitors are installed in circuits in discrete combinations, resulting in large circuit volume and many parasitic parameters.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated electronic components, and in particular to a miniature high-precision ceramic thin film resistor-capacitor dual-function component and a manufacturing method thereof. Background Art

[0002] In the development of modern electronic technology, circuit integration and miniaturization have become important trends. Traditionally, functions such as electrostatic protection, signal isolation, and signal attenuation are usually achieved through a combination of discrete resistors and capacitors. However, as electronic products develop towards thinness, compactness, and high performance, this approach has gradually exposed the following problems:

[0003] 1. Large space occupation: The layout of discrete components on the circuit board requires separate mounting locations, which increases the area of ​​the circuit board. For smartphones, wearable devices, medical electronics and other miniaturized products, this layout limits the compactness of the design.

[0004] 2. Complex component connections: Discrete resistors and capacitors require multiple solder points and connection paths, which increases the complexity of circuit design. This not only reduces manufacturing efficiency, but also easily leads to circuit failure due to poor connections or solder joints, which in turn causes product quality problems.

[0005] 3. Parasitic parameter impact: Connecting multiple discrete components will introduce more parasitic inductance and capacitance, resulting in signal distortion, delay, or interference, especially in high-frequency circuits. This situation poses considerable challenges to RF communications, microwave circuits, and high-speed digital signal processing.

[0006] 4. Reliability and cost issues: Discrete components require more manufacturing and assembly steps, which increases production costs. In addition, due to the large number of connection points, the long-term reliability of the circuit is reduced, and the possibility of maintenance and rework is increased, resulting in low product production yield.

[0007] Therefore, the originally discrete resistors and capacitors are integrated into one electronic component, and their resistance parameters and capacitance parameters can be precisely adjusted according to production requirements, thereby simplifying the circuit and improving the volume-performance ratio of the circuit, which will undoubtedly promote the further development of electronic technology.

[0008] In summary, it is found that the existing technology has at least the following technical problems:

[0009] In existing circuits, resistors and capacitors are discretely combined, resulting in large circuit size and many parasitic parameters. Summary of the Invention

[0010] The present invention aims to provide a miniature high-precision ceramic thin-film dual-function resistor-capacitor element and a method for manufacturing the same. By using magnetron vacuum sputtering technology, a TaN film, a TiW film, and an Au film are sequentially deposited on a grain boundary layer dielectric ceramic substrate. The required TaN film is retained as a resistor film by etching, and the square resistance of the resistor film is precisely adjusted by dry etching combined with a heat treatment process to ultimately form a refined substrate. A single resistor-capacitor element combining a resistor and a capacitor is then obtained by a scribing process, and the electrostatic capacitance is precisely adjusted by controlling the thickness of the scribing blade. This single resistor-capacitor element has the characteristics of high-precision resistance and capacitance, miniaturization, low parasitic parameters, and high reliability, and can be widely used in microwave communications, radio frequency modules, and other high-performance electronic circuits. This solves the problem of large circuit size and high parasitic parameters caused by the discrete combination of resistors and capacitors in existing circuits.

[0011] The various technical effects that can be produced by the preferred technical solutions among the various technical solutions provided by the present invention are described in detail below.

[0012] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0013] The present invention provides a miniature high-precision ceramic thin film resistor-capacitor dual-function component, comprising a grain boundary layer dielectric ceramic substrate made of SrTiO3 as a main material, with a dielectric constant in the range of 15,000 to 45,000 and a thickness in the range of 0.1 to 0.35 mm; and a TaN thin film, wherein the grain boundary layer dielectric ceramic substrate is placed on a carrier of a magnetron vacuum sputtering machine and fed into a receiving chamber of the magnetron vacuum sputtering machine, a mixed gas is filled into the receiving chamber, and the magnetron vacuum sputtering machine is used to sputter a Ta target for 5 to 30 minutes to deposit a layer of the TaN thin film on the surface of the grain boundary layer dielectric ceramic substrate; the thickness of the TaN thin film increases with the length of the sputtering time, and the thickness of the TaN thin film is controlled to be 0.1 to 0.6 μm; and a TiW thin film, wherein the magnetron vacuum sputtering machine is switched to a TiW target, and the surface of the grain boundary layer dielectric ceramic substrate with the TaN thin film and another surface of the grain boundary layer dielectric ceramic substrate are sputtered. The TiW target is sputtered on the opposite surface of the TaN film and the other opposite surface, and a layer of the TiW film is deposited on the TaN film and the other opposite surface; and the Au film is switched to the Au target by the magnetron vacuum sputtering machine, and the Au target is sputtered on the surface of the grain boundary layer dielectric ceramic substrate with the TiW film, and a layer of the Au film is deposited on the TiW films on the two opposite surfaces of the grain boundary layer dielectric ceramic substrate, thereby obtaining a primary substrate; the overall structure of the primary substrate from bottom to top is: the Au film-the TiW film-the grain boundary layer dielectric ceramic substrate-the TaN film-the TiW film-the Au film; wherein the TiW film and the Au film on both sides of the grain boundary layer dielectric ceramic substrate are electrodes; a circuit is etched into the primary substrate, leaving the TaN film as a resistor film, and the initial square resistance of the resistor film is set to 20 to 200Ω ， Different initial square resistance values ​​are obtained by controlling the thickness of the TaN film during sputtering; the square resistance value of the resistor film is then precisely adjusted through alternating dry etching and heat treatment baking, thereby obtaining a refined substrate; the electrodes on both sides and the grain boundary layer dielectric ceramic substrate constitute the capacitor part; the resistor film and the electrodes on the side form a circuit connection to constitute the resistor part; the refined substrate is cut by a dicing machine to form a single resistor and capacitor element that combines resistance and capacitance; and blades of various thicknesses with sizes of 30 to 120 μm are used to precisely adjust the electrostatic capacitance value of the single resistor and capacitor element.

[0014] In one embodiment, the mixing ratio of argon and nitrogen in the mixed gas is 1:2.

[0015] In one embodiment, the temperature of the heat treatment baking is 300-450° C.; the dry etching and the heat treatment baking are performed alternately 1-5 times.

[0016] In one embodiment, the alternating treatments of the dry etching and the heat treatment and baking adjust the square resistance of the resistor film within the range of 5-35Ω.

[0017] In one embodiment, the electrostatic capacitance value of the single RC element is adjusted within a range of 10% by using blades of various thicknesses ranging from 30 μm to 120 μm.

[0018] A manufacturing method is also provided, comprising the following steps: S1, preparing materials: preparing a grain boundary layer dielectric ceramic substrate made of SrTiO3 as a main material, with a dielectric constant in the range of 15000 to 45000 and a thickness in the range of 0.1 to 0.35 mm;

[0019] S2, cleaning: ultrasonically cleaning the grain boundary layer dielectric ceramic substrate in S1 with pure water and ethanol in sequence to remove oil stains and particles on the surface of the grain boundary layer dielectric ceramic substrate;

[0020] S3, drying: drying the grain boundary layer dielectric ceramic substrate cleaned in S2 and setting it aside;

[0021] S4. Sputter coating the dielectric ceramic substrate in the grain boundary layer in three steps:

[0022] S4.1. Place the dried grain boundary layer dielectric ceramic substrate obtained in S3 onto a carrier of a magnetron vacuum sputtering machine and into a receiving chamber of the magnetron vacuum sputtering machine. Evacuate the receiving chamber to a pressure of less than 1.0E-3 Pa.

[0023] S4.2. Fill the chamber with a mixture of argon and nitrogen until the pressure reaches 1.0E-2Pa; the ratio of argon to nitrogen is 1:2.

[0024] S4.3. Using Ta, target sputtering is performed on the grain boundary layer dielectric ceramic substrate using a magnetron vacuum sputtering machine in a mixed gas atmosphere. The sputtering time is controlled within 5 minutes to 30 minutes to deposit a TaN film on the surface of the grain boundary layer dielectric ceramic substrate. The thickness of the TaN film is controlled to be 0.10 to 0.6 μm.

[0025] S4.31. When depositing TaN thin films, the magnetron vacuum sputtering machine uses a revolution and rotation motion mode on the grain boundary layer dielectric ceramic substrate to ensure uniformity of TaN film deposition;

[0026] S4.4. The chamber is evacuated and then filled with argon gas. The magnetron vacuum sputtering machine is switched to a TiW target. The magnetron vacuum sputtering machine is then used to perform target sputtering to deposit a TiW film on the TaN film on the grain boundary layer dielectric ceramic substrate.

[0027] S4.5. Switching to an Au target using a magnetron vacuum sputtering machine, performing target sputtering using the magnetron vacuum sputtering machine to deposit a layer of Au thin film on the TiW film;

[0028] S5. After the coating step of S4, a photosensitive adhesive is spin-coated on the grain boundary layer dielectric ceramic substrate and dried.

[0029] S5.1. Place the grain boundary layer dielectric ceramic substrate obtained in S4 on a carrier plate of a spin coater, drop an appropriate amount of photosensitive adhesive on the grain boundary layer dielectric ceramic substrate, and rotate the grain boundary layer dielectric ceramic substrate at a speed of 2000 rpm / min to evenly coat the surface of the grain boundary layer dielectric ceramic substrate to form a photosensitive adhesive film;

[0030] S5.2. Transfer the photosensitive adhesive-coated dielectric ceramic substrate to a 110°C drying table and dry for 1 minute.

[0031] S6. Expose the dielectric ceramic substrate in the grain boundary layer coated with the photosensitive adhesive film and wash away the residual adhesive:

[0032] S6.1. Place the grain boundary layer dielectric ceramic substrate obtained in the adhesive coating step of S5 on the substrate stage of an exposure machine. Then, place a pre-designed mask plate on the grain boundary layer dielectric ceramic substrate to cover the grain boundary layer dielectric ceramic substrate. Expose the grain boundary layer dielectric ceramic substrate for 20 to 40 seconds to form a pattern on the grain boundary layer dielectric ceramic substrate.

[0033] S6.2. Soak the grain boundary layer dielectric ceramic substrate in NaOH solution to develop a pattern, and then remove the glue on the surface of the pattern to be etched on the grain boundary layer dielectric ceramic substrate;

[0034] S7. Remove the two layers of adhesive-free protective patterns from the grain boundary layer dielectric ceramic substrate:

[0035] S7.1. Wash the grain boundary layer dielectric ceramic substrate obtained in S6 with a KI / I2 solution to remove the Au film on the surface of the non-adhesive protective pattern;

[0036] S7.2. Then, use an oxidizing acid solution to remove the TiW film under the Au film without the protective adhesive pattern, leaving the TaN film as the resistor film.

[0037] S8. Accurately adjust the square resistance of the grain boundary layer dielectric ceramic substrate:

[0038] S8.1. Control the thickness of the TaN film during construction to obtain an initial square resistance of the resistor film in the range of 20 to 200 Ω;

[0039] S8.2, accurately adjusting the square resistance of the resistor film by alternately dry etching and baking at a temperature range of 300-450°C;

[0040] S9: Cut the grain boundary layer dielectric ceramic substrate to form a single resistor and capacitor element:

[0041] S9.1. Place the grain boundary layer dielectric ceramic substrate obtained in S8 on the stage of a circular knife water-cooled dicing machine. Using a blade of predetermined thickness and a dicing scale, remove excess material from the grain boundary layer dielectric ceramic substrate, and dicing to form single resistor and capacitor components.

[0042] S9.2, by using blades of various thicknesses ranging from 30 to 120 μm, the capacitance of individual RC components can be precisely adjusted;

[0043] S9.21. The precise adjustment range of the electrostatic capacitance value of a single resistor and capacitor component is within 10%.

[0044] In one embodiment, in S4.4: the containing chamber is evacuated to a pressure of 5*10^-4 Pa, the sputtering time of the TiW target is controlled to be 450S, and the deposition thickness of the TiW film is controlled to be 0.02 microns.

[0045] In one embodiment, in S4.5: the containing chamber is evacuated to a pressure of 5*10^-4 Pa, the sputtering time of the Au target is controlled to be 900S, and the deposition thickness of the Au film is controlled to be 0.4 microns.

[0046] In one embodiment, in S5.1: the thickness of the photosensitive adhesive film is controlled to be 7 to 10 microns.

[0047] In one embodiment, the oxidizing acid solution includes any one or more combinations of hydrogen peroxide, ammonia water, and diammonium hydrogen phosphate.

[0048] The beneficial effects of the present invention are as follows:

[0049] The structure and process of the miniature high-precision ceramic thin-film dual-function resistor-capacitor element of the present invention have the following significant effects: 1. Component miniaturization: By integrating a resistor film formed of a TaN thin film, a resistor portion formed using a TiW thin film-Au thin film as electrodes, and a capacitor portion formed of a TiW thin film, Au thin film, and a grain boundary layer dielectric ceramic substrate on the same element, the performance of the resistor and capacitor are unified, significantly reducing the number and space occupied by discrete resistor and capacitor components required for the circuit, and reducing the volume ratio of resistors and capacitors in the circuit, which helps meet the requirements of modern electronic products for miniaturization and high integration.

[0050] 2. Reduce parasitic parameters: By adopting an integrated design, the electrical components with two types of performance, resistance and capacitance, are combined to form a single resistor and capacitor component, eliminating the welding and connection paths between the discrete resistor and capacitor components, thereby reducing the generation of parasitic parameters and greatly improving the performance stability of high-frequency and microwave circuits.

[0051] 3. High precision and adjustability: The single resistor and capacitor element of the present invention can accurately adjust the square resistance of the resistor film through alternating dry etching and heat treatment baking, and adjust the electrostatic capacitance value by cutting, thereby achieving high-precision adjustment and matching of resistance and capacitance parameters to meet the requirements of precision circuits.

[0052] 4. Excellent material properties: Based on the SrTiO3 grain boundary layer dielectric ceramic substrate, it provides the advantage of high dielectric constant (15000~45000), significantly improving the performance of the capacitor part in the single resistor and capacitor components; at the same time, the use of TaN as the resistor film material gives the resistor part the performance advantages of low noise, high high temperature stability and high corrosion resistance, ensuring the long-term application reliability of the single resistor and capacitor components.

[0053] 5. Advanced technology: TaN film, TiW film and Au film are deposited in layers through magnetron vacuum sputtering technology, achieving high-quality uniform coverage and precise thickness control of the films, providing technical support for the controllability and consistency of the resistance and capacitance performance of single RC components.

[0054] 6. Simplify assembly and improve reliability: Integrating discrete resistors and capacitors into single resistor and capacitor components reduces the number of solder joints in the circuit, lowering the risk of circuit failure due to poor soldering and long-term use, thereby improving the reliability of electronic products using single resistor and capacitor components. At the same time, the simplified assembly process of electronic products also reduces production costs.

[0055] 7. Broad application prospects: The single resistor and capacitor element of the present invention has dual resistor and capacitor functions and is suitable for microwave communications, radio frequency circuits, 5G equipment, medical electronics and other electronic fields that require high-density and miniaturized design, and has broad market application space. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solution of the present invention, the following is a brief introduction to the drawings required for use in the implementation. Obviously, the drawings described below are only some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0057] Figure 1 It is a schematic structural diagram of a single RC element of the present invention in which the resistor and capacitor are connected in parallel;

[0058] Figure 2 This is an equivalent circuit diagram of the resistance and capacitance of a single RC element of the present invention connected in parallel;

[0059] Figure 3This is a schematic diagram of the structure of a single resistor and capacitor element of the present invention connected in series;

[0060] Figure 4 This is an equivalent circuit diagram of the resistor and capacitor of the single RC element of the present invention connected in series.

[0061] The accompanying drawings are numerals as follows:

[0062] 1. Grain boundary layer dielectric ceramic substrate;

[0063] 2. TaN thin film;

[0064] 3. TiW thin film;

[0065] 4. Au thin film;

[0066] 5. Electrode;

[0067] 6. Single resistor and capacitor components. DETAILED DESCRIPTION

[0068] The technical solutions in the embodiments of the present invention will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present invention.

[0069] A specific embodiment provides a miniature high-precision ceramic thin film resistor-capacitor dual-function element and a manufacturing method thereof, which effectively solves the problem that the existing circuit uses a discrete combination of resistors and capacitors, resulting in a large circuit size and many parasitic parameters.

[0070] In addition, all the contents of the configurations shown in the following embodiments are not necessarily essential as the solution to the invention described in the claims.

[0071] The first implementation of a miniature high-precision ceramic thin film resistor-capacitor dual-function component Figure 1 and Figure 2As shown, it includes a grain boundary layer dielectric ceramic substrate 1 made of SrTiO3 as a main material, with a dielectric constant in the range of 15000 to 45000 and a thickness in the range of 0.1 to 0.35 mm; and a TaN film 2, by placing the grain boundary layer dielectric ceramic substrate 1 on a carrier of a magnetron vacuum sputtering machine, and sending it into a receiving chamber of the magnetron vacuum sputtering machine, filling the receiving chamber with a mixed gas, and using the magnetron vacuum sputtering machine to sputter with a Ta target for 5 to 30 minutes, so that a layer of TaN film 2 is deposited on the surface of the grain boundary layer dielectric ceramic substrate 1; Ta The thickness of the N film 2 increases with the sputtering time, and the thickness of the TaN film 2 is controlled to be 0.1-0.6μm; and the TiW film 3, which is switched to the TiW target by the magnetron vacuum sputtering machine, and the surface of the grain boundary layer dielectric ceramic substrate 1 with the TaN film 2 and the other opposite surface is subjected to TiW target sputtering, and a layer of TiW film 3 is deposited on the TaN film 2 and the other opposite surface; and the Au film 4, which is switched to the Au target by the magnetron vacuum sputtering machine, and the surface of the grain boundary layer dielectric ceramic substrate 1 with the TiW film 3 is subjected to Au target sputtering. A layer of Au film 4 is deposited on the TiW film 3 on two opposite sides of the grain boundary layer dielectric ceramic substrate to obtain a primary substrate; the overall structure of the primary substrate from bottom to top is: Au film-TiW film-grain boundary layer dielectric ceramic substrate-TaN film-TiW film-Au film; wherein the TiW film-Au film on both sides of the grain boundary layer dielectric ceramic substrate are electrodes; a circuit is etched into the primary substrate, leaving the TaN film 2 as a resistor film, and the initial square resistance of the resistor film is set to 20 to 200Ω, and the sputtering time is controlled. The thickness of the TaN film 2 is made to obtain different initial square resistance values; then, through alternating treatments of dry etching and heat treatment and baking, the square resistance value of the resistor film is precisely adjusted to obtain a refined substrate; the electrodes 5 on both sides and the grain boundary layer dielectric ceramic substrate constitute the capacitor part; the resistor film and the electrode 5 on the side form a circuit connection to constitute the resistor part; the refined substrate is cut by a dicing machine to form a single resistor and capacitor element 6 that combines resistance and capacitance; by using blades of various thicknesses with a size of 30 to 120 μm, the electrostatic capacitance value of the single resistor and capacitor element 6 is precisely adjusted.

[0072] Specifically, the above-mentioned Ta target sputtering requires the use of a mixed gas to convert the Ta material into TaN during target sputtering. In order to accurately control the generation of TaN and deposit it on the grain boundary layer dielectric ceramic substrate 1 within the required thickness, it is necessary to control the mixing ratio of argon and nitrogen in the mixed gas to 1:2.

[0073] As an optional implementation method,

[0074] Regarding the precise adjustment of the square resistance of the resistor film of the single RC element 6, the heat treatment baking temperature is 300-450° C.; dry etching and heat treatment baking are alternately performed 1-5 times in sequence until the target resistance value is obtained.

[0075] During application, dry etching and heat treatment baking are alternately processed to adjust the square resistance of the resistor film within the range of 5-35Ω, with an adjustment accuracy of 5Ω per unit.

[0076] Regarding the precise control method of the electrostatic capacitance value of the above-mentioned single RC element 6, the electrostatic capacitance value of the single RC element 6 is adjusted within a range of 10% by using blades of various thicknesses ranging from 30 to 120 μm.

[0077] The structure and process of the miniature high-precision ceramic thin film resistor-capacitor dual-function component have the following significant effects: 1. Component miniaturization: By integrating the resistor film formed by TaN thin film 2, the resistor part composed of TiW thin film-Au thin film as electrodes, and the capacitor part composed of TiW thin film 3, Au thin film 4 and grain boundary layer dielectric ceramic substrate 1 on the same component, the performance of resistance and capacitance is unified, significantly reducing the number of discrete components of resistance and capacitance required in the circuit and the space occupied, reducing the volume proportion of resistance and capacitance in the circuit, and helping to meet the needs of modern electronic products for miniaturization and high integration.

[0078] 2. Reduce parasitic parameters: By adopting an integrated design, the electrical components with two types of performance, resistance and capacitance, are combined to form a single resistor and capacitor element 6, eliminating the welding and connection paths between the discrete resistor and capacitor components, thereby reducing the generation of parasitic parameters and significantly improving the performance stability of high-frequency and microwave circuits.

[0079] 3. High precision and adjustability: The single resistor and capacitor element 6 of the present invention can accurately adjust the square resistance of the resistor film through alternating dry etching and heat treatment baking, and adjust the electrostatic capacitance value by cutting, thereby achieving high-precision adjustment and matching of resistance and capacitance parameters to meet the requirements of precision circuits.

[0080] 4. Excellent material properties: Based on the SrTiO3 grain boundary layer dielectric ceramic substrate 1, it provides the advantage of a high dielectric constant (15000-45000), significantly improving the performance of the capacitor part in the single resistor and capacitor element 6; at the same time, TaN is used as the resistor film material, so that the resistor part has the performance advantages of low noise, high high temperature stability and high corrosion resistance, ensuring the long-term application reliability of the single resistor and capacitor element 6.

[0081] 5. Advanced technology: The TaN film 2, TiW film 3 and Au film 4 are deposited in layers using magnetron vacuum sputtering technology, achieving high-quality, uniform coverage and precise thickness control of the films, providing technical support for the controllability and consistency of the resistance and capacitance performance of the single resistor and capacitor element 6.

[0082] 6. Simplify assembly and improve reliability: Integrating discrete resistor and capacitor components into a single resistor and capacitor component 6 reduces the number of solder joints in the circuit, lowering the risk of circuit failure due to poor soldering and long-term use, thereby improving the reliability of electronic products using the single resistor and capacitor component 6. At the same time, the simplified assembly process of electronic products also reduces production costs.

[0083] 7. Broad application prospects: The single resistor and capacitor element 6 of the present invention has dual resistor and capacitor functions, and is suitable for microwave communications, radio frequency circuits, 5G equipment, medical electronics and other electronic fields that require high-density and miniaturized design, and has broad market application space.

[0084] Based on the above embodiment of the miniature high-precision ceramic thin film resistor-capacitor dual-function element, a manufacturing method is provided, comprising the following steps: S1, preparing materials: preparing a grain boundary layer dielectric ceramic substrate made of SrTiO3 as a main material, with a dielectric constant in the range of 15000 to 45000 and a thickness of 0.1 to 0.35 mm;

[0085] S2, cleaning: ultrasonically cleaning the grain boundary layer dielectric ceramic substrate in S1 with pure water and ethanol in sequence to remove oil stains and particles on the surface of the grain boundary layer dielectric ceramic substrate;

[0086] S3, drying: drying the grain boundary layer dielectric ceramic substrate cleaned in S2 and setting it aside;

[0087] S4. Sputter coating the dielectric ceramic substrate in the grain boundary layer in three steps:

[0088] S4.1. Place the dried grain boundary layer dielectric ceramic substrate obtained in S3 onto a carrier of a magnetron vacuum sputtering machine and into a receiving chamber of the magnetron vacuum sputtering machine. Evacuate the receiving chamber to a pressure of less than 1.0E-3 Pa.

[0089] S4.2. Fill the chamber with a mixture of argon and nitrogen until the pressure reaches 1.0E-2Pa; the ratio of argon to nitrogen is 1:2.

[0090] S4.3. Using Ta, target sputtering is performed on the grain boundary layer dielectric ceramic substrate using a magnetron vacuum sputtering machine in a mixed gas atmosphere. The sputtering time is controlled within 5 minutes to 30 minutes to deposit a TaN film on the surface of the grain boundary layer dielectric ceramic substrate. The thickness of the TaN film is controlled to be 0.10 to 0.6 μm.

[0091] S4.31. When depositing TaN thin films, the magnetron vacuum sputtering machine uses a revolution and rotation motion mode on the grain boundary layer dielectric ceramic substrate to ensure uniformity of TaN film deposition;

[0092] S4.4. The chamber is evacuated and then filled with argon gas. The magnetron vacuum sputtering machine is switched to a TiW target. The magnetron vacuum sputtering machine is then used to perform target sputtering to deposit a TiW film on the TaN film on the grain boundary layer dielectric ceramic substrate.

[0093] S4.5. Switching to an Au target using a magnetron vacuum sputtering machine, performing target sputtering using the magnetron vacuum sputtering machine to deposit a layer of Au thin film on the TiW film;

[0094] S5. After the coating step of S4, a photosensitive adhesive is spin-coated on the grain boundary layer dielectric ceramic substrate and dried.

[0095] S5.1. Place the grain boundary layer dielectric ceramic substrate obtained in S4 on a carrier plate of a spin coater, drop an appropriate amount of photosensitive adhesive on the grain boundary layer dielectric ceramic substrate, and rotate the grain boundary layer dielectric ceramic substrate at a speed of 2000 rpm / min to evenly coat the surface of the grain boundary layer dielectric ceramic substrate to form a photosensitive adhesive film;

[0096] S5.2. Transfer the photosensitive adhesive-coated dielectric ceramic substrate to a 110°C drying table and dry for 1 minute.

[0097] S6. Expose the dielectric ceramic substrate in the grain boundary layer coated with the photosensitive adhesive film and wash away the residual adhesive:

[0098] S6.1. Place the grain boundary layer dielectric ceramic substrate obtained in the adhesive coating step of S5 on the substrate stage of an exposure machine. Then, place a pre-designed mask plate on the grain boundary layer dielectric ceramic substrate to cover the grain boundary layer dielectric ceramic substrate. Expose the grain boundary layer dielectric ceramic substrate for 20 to 40 seconds to form a pattern on the grain boundary layer dielectric ceramic substrate.

[0099] S6.2. Soak the grain boundary layer dielectric ceramic substrate in NaOH solution to develop a pattern, and then remove the glue on the surface of the pattern to be etched on the grain boundary layer dielectric ceramic substrate;

[0100] S7. Remove the two layers of adhesive-free protective patterns from the grain boundary layer dielectric ceramic substrate:

[0101] S7.1. Wash the grain boundary layer dielectric ceramic substrate obtained in S6 with a KI / I2 solution to remove the Au film on the surface of the non-adhesive protective pattern;

[0102] S7.2. Then, use an oxidizing acid solution to remove the TiW film under the Au film without the protective adhesive pattern, leaving the TaN film as the resistor film.

[0103] S8. Accurately adjust the square resistance of the grain boundary layer dielectric ceramic substrate:

[0104] S8.1. Control the thickness of the TaN film during sputtering to obtain an initial square resistance of the resistor film in the range of 20 to 200 Ω;

[0105] S8.2, accurately adjusting the square resistance of the resistor film by alternately dry etching and baking at a temperature range of 300-450°C;

[0106] S9: Cut the grain boundary layer dielectric ceramic substrate to form a single resistor and capacitor element:

[0107] S9.1. Place the grain boundary layer dielectric ceramic substrate obtained in S8 on the stage of a circular knife water-cooled dicing machine. Using a blade of predetermined thickness and a dicing scale, remove excess material from the grain boundary layer dielectric ceramic substrate, and dicing to form single resistor and capacitor components.

[0108] S9.2, by using blades of various thicknesses ranging from 30 to 120 μm, the capacitance of individual RC components can be precisely adjusted;

[0109] S9.21. The precise adjustment range of the electrostatic capacitance value of a single resistor and capacitor component is within 10%.

[0110] Among them, for controlling the generation of the TiW film, in S4.4: the containing chamber is evacuated to a pressure of 5*10^-4Pa, the sputtering time of the TiW target is controlled to be 450S, and the deposition thickness of the TiW film is controlled to be 0.02 microns.

[0111] To control the formation of the Au thin film, in S4.5: the containing chamber is evacuated to a pressure of 5*10^-4 Pa, the sputtering time of the Au target is controlled to be 900 s, and the deposition thickness of the Au thin film is controlled to be 0.4 microns.

[0112] In order to ensure that the pattern on the mask can be accurately and clearly projected onto the thin film on the surface of the grain boundary layer dielectric ceramic substrate during exposure, in S5.1: the thickness of the photosensitive film is controlled to be 7 to 10 microns.

[0113] Regarding the solution capable of removing the TiW film and retaining the TaN film as a resistor film without affecting the performance of the TaN film, when used, the oxidizing acid solution includes any one or more combinations of hydrogen peroxide, ammonia water, and diammonium hydrogen phosphate.

[0114] Experiment 1 was conducted using the micro high-precision ceramic thin film RC dual-function element of the above embodiment and the method for manufacturing the micro high-precision ceramic thin film RC dual-function element based on the embodiment:

[0115] (1) A grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant of 15000, a length and width of 38 mm, a square shape, and an initial thickness of 0.35 mm was ultrasonically cleaned with pure water and ethanol to remove oil and particles on the surface of the grain boundary layer dielectric ceramic substrate, and then dried for use.

[0116] (2) The substrate obtained in (1) is placed on the carrier of the magnetron vacuum sputtering machine and sent into the containing chamber of the magnetron vacuum sputtering machine, and the containing chamber is evacuated to a pressure less than 1.0E-3Pa; an argon-nitrogen mixed gas (mixing ratio of 1:2) is filled until the pressure in the containing chamber reaches 1.0E-2Pa, and a tantalum (Ta) target is used for sputtering in the atmosphere of the mixed gas for 5 minutes. A layer of tantalum nitride (TaN) film with a thickness of about 0.1um is deposited on the surface through a sputtering chemical reaction.

[0117] The containing chamber is evacuated and filled with argon gas, and the TiW target is switched to deposit a TiW film on the tantalum nitride (TaN) film.

[0118] Switching to the Au target, a layer of Au thin film is deposited on the TiW film. Magnetron sputtering uses both revolution and rotation to ensure uniformity of the TaN film.

[0119] (3) Place the substrate obtained in (2) on a spin coater, drop an appropriate amount of photosensitive adhesive on it, and evenly coat a layer of photosensitive adhesive film on the surface of the substrate at a rotation speed of 2000 rpm / min. Then transfer it to a drying table at 110°C and dry it for 1 minute.

[0120] (4) Place the substrate obtained in (3) on the substrate stage of the exposure machine, put in a mask template with preset specifications, expose for 20 seconds, and soak and develop with NaOH solution to remove the glue on the surface of the pattern to be etched.

[0121] (5) The substrate obtained in (4) is first washed with KI / I2 solution to remove the Au layer on the surface of the non-glue protective pattern, and then the TiW layer under the original Au layer of the non-glue protective pattern is washed with an oxidizing acid solution, leaving the TaN film as the resistor film.

[0122] (6) The initial square resistance of the resistor film is controlled to be 165 ohms. The square resistance of the resistor film is precisely adjusted to 200 ohms by alternating dry etching and baking at 300°C, with an adjusted value of 35Ω.

[0123] (7) The substrate obtained in (6) is placed on the stage of a circular knife water-cooled cutting machine, and the substrate is cut into the first single resistor and capacitor components by using a 35um thick blade and cutting size graduations.

[0124] The electrical performance test results of the first single resistor and capacitor are shown in the following table:

[0125]

[0126] Note: Dielectric constant 15000, initial thickness of substrate T1 = 0.35 mm, mask size: 0402.

[0127] Experiment 2 was conducted based on the micro high-precision ceramic thin film RC dual-function element of the above embodiment and the method for manufacturing the micro high-precision ceramic thin film RC dual-function element based on the embodiment:

[0128] (1) A grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant of 30,000, a length and width of 38 mm, a square shape, and an initial thickness of 0.20 mm was ultrasonically cleaned with pure water and ethanol to remove oil and particles on the surface of the grain boundary layer dielectric ceramic substrate, and then dried for use.

[0129] (2) The substrate obtained in (1) is placed on the carrier of the magnetron vacuum sputtering machine and sent into the containing chamber of the magnetron vacuum sputtering machine, and the containing chamber is evacuated to a pressure less than 1.0E-3Pa; an argon-nitrogen mixed gas (mixing ratio of 1:2) is filled until the pressure in the containing chamber reaches 1.0E-2Pa, and a tantalum (Ta) target is used for sputtering in the atmosphere of the mixed gas for 15 minutes. A tantalum nitride (TaN) film with a thickness of about 0.3um is deposited on the surface through a sputtering chemical reaction.

[0130] The containing chamber is evacuated and filled with argon gas, and the TiW target is switched to deposit a TiW film on the tantalum nitride (TaN) film.

[0131] Switching to the Au target, a layer of Au thin film is deposited on the TiW film. Magnetron sputtering uses both revolution and rotation to ensure uniformity of the TaN film.

[0132] (3) Place the substrate obtained in (2) on a spin coater, drop an appropriate amount of photosensitive adhesive on it, and evenly coat a layer of photosensitive adhesive film on the surface of the substrate at a rotation speed of 2000 rpm / min. Then transfer it to a drying table at 110°C and dry it for 1 minute.

[0133] (4) Place the substrate obtained in (3) on the substrate stage of the exposure machine, put in the mask template with the same preset specifications as in Experiment 1, expose for 30 seconds, and soak and develop with NaOH solution to wash away the glue on the surface of the pattern to be etched.

[0134] (5) The substrate obtained in (4) is first washed with KI / I2 solution to remove the Au layer on the surface of the non-glue protective pattern, and then the TiW layer under the original Au layer of the non-glue protective pattern is washed with an oxidizing acid solution, leaving the TaN film as the resistor film.

[0135] (6) The initial square resistance of the resistor film is controlled to be 85 ohms. The square resistance of the resistor film is precisely adjusted to 100 ohms by alternating dry etching and baking at 400°C, with the adjustment value being 15Ω.

[0136] (7) The substrate obtained in (6) is placed on the stage of a circular knife water-cooled cutting machine, and the substrate is cut into the second single resistor and capacitor components by using a 50um thick blade and cutting size graduations.

[0137] The electrical performance test results of the second single resistor and capacitor are shown in the following table:

[0138]

[0139] Note: Dielectric constant 30000, initial thickness of substrate T2 = thickness 0.20mm, mask size: 0402.

[0140] Experiment 3 was conducted based on the micro high-precision ceramic thin film RC dual-function element of the above embodiment and the method for manufacturing the micro high-precision ceramic thin film RC dual-function element based on the embodiment:

[0141] (1) A grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant of 45000, a length and width of 38 mm, and a thickness of 0.10 mm is ultrasonically cleaned using pure water and ethanol to remove oil and particles on the surface, and then dried for use; (1) A grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant of 45000, a length and width of 38 mm, a square shape, and an initial thickness of 0.10 mm is ultrasonically cleaned using pure water and ethanol to remove oil and particles on the surface of the grain boundary layer dielectric ceramic substrate, and then dried for use.

[0142] (2) The substrate obtained in (1) is placed on the carrier of the magnetron vacuum sputtering machine and sent into the containing chamber of the magnetron vacuum sputtering machine, and the containing chamber is evacuated to a pressure less than 1.0E-3Pa; an argon-nitrogen mixed gas (mixing ratio of 1:2) is filled until the pressure in the containing chamber reaches 1.0E-2Pa, and a tantalum (Ta) target is used for sputtering in the atmosphere of the mixed gas for 30 minutes. A tantalum nitride (TaN) film with a thickness of about 0.6um is deposited on the surface through a sputtering chemical reaction.

[0143] The containing chamber is evacuated and filled with argon gas, and the TiW target is switched to deposit a TiW film on the tantalum nitride (TaN) film.

[0144] Switching to the Au target, a layer of Au thin film is deposited on the TiW film. Magnetron sputtering uses both revolution and rotation to ensure uniformity of the TaN film.

[0145] (3) Place the substrate obtained in (2) on a spin coater, drop an appropriate amount of photosensitive adhesive on it, and evenly coat a layer of photosensitive adhesive film on the surface of the substrate at a rotation speed of 2000 rpm / min. Then transfer it to a drying table at 110°C and dry it for 1 minute.

[0146] (4) Place the substrate obtained in (3) on the substrate stage of the exposure machine, put in the mask template with the same preset specifications as in Experiment 1, expose for 40 seconds, and soak and develop with NaOH solution to wash away the glue on the surface of the pattern to be etched.

[0147] (5) The substrate obtained in (4) is first washed with KI / I2 solution to remove the Au layer on the surface of the non-glue protective pattern, and then the TiW layer under the original Au layer of the non-glue protective pattern is washed with an oxidizing acid solution, leaving the TaN film as the resistor film.

[0148] (6) The initial square resistance of the resistor film is controlled to be 15 ohms. The square resistance of the resistor film is precisely adjusted to 20 ohms by alternating dry etching and baking at 450°C, with an adjustment value of 5Ω.

[0149] (7) The substrate obtained in (6) is placed on the stage of a circular knife water-cooled cutting machine, and the substrate is cut into the third single resistor and capacitor components by using a 120um thick blade and cutting size graduations.

[0150] The electrical performance test results of the third single resistor and capacitor are shown in the following table:

[0151]

[0152] Note: Dielectric constant 45000, initial thickness of substrate T3 = 0.10 mm, mask size: 0402.

[0153] From the above three experiments, it can be seen that in a single RC component, the value of the electrostatic capacitance Cp of the capacitor part is affected by the blade thickness and the cutting size graduation used by the circular knife water-cooled cutting machine, that is, controlling the blade thickness and the cutting size graduation used can adjust the electrostatic capacitance of the single RC component, and in the blade size range of 30 to 120um and the cutting size graduation used, the larger the blade thickness and the cutting size graduation used, the higher the retained electrostatic capacitance value; and by adopting blades of different sizes and cutting size graduations, the value of the insulation IR can also be adjusted, and the larger the blade thickness and the cutting size graduation used, the lower the retained insulation IR value.

[0154] The resistance value of the resistor film in the resistor part of the single resistor and capacitor element is affected by the temperature of the alternating treatment of dry etching and heat treatment baking. In the temperature range of 300-450℃, the resistance value will be higher as it is adjusted, and the higher the temperature, the smaller the adjusted resistance value, and the smaller the increase in resistance value.

[0155] The technical features of the above embodiments may be combined arbitrarily. To simplify the description, not all possible combinations of the technical features in the above embodiments are described.

Claims

1. A miniature high-precision ceramic thin film resistor-capacitor dual-function component, characterized in that: It includes a grain boundary layer dielectric ceramic substrate made of SrTiO3 as a main material, with a dielectric constant in the range of 15000 to 45000 and a thickness in the range of 0.1 to 0.35 mm; and a TaN film, by placing the grain boundary layer dielectric ceramic substrate on a carrier of a magnetron vacuum sputtering machine and delivering it into a receiving chamber of the magnetron vacuum sputtering machine, filling the receiving chamber with a mixed gas, and using the magnetron vacuum sputtering machine to sputter with a Ta target for 5-30 minutes to deposit a layer of the TaN film on the surface of the grain boundary layer dielectric ceramic substrate; The thickness of the TaN film increases with the sputtering time, and the thickness of the TaN film is controlled to be 0.1-0.6 μm; and a TiW film, switching the magnetron vacuum sputtering machine to a TiW target, sputtering the TiW target on the surface of the grain boundary layer dielectric ceramic substrate with the TaN film and the other opposite surface, depositing a layer of the TiW film on both the TaN film and the other opposite surface; and an Au thin film, switching to an Au target by the magnetron vacuum sputtering machine, sputtering the Au target on the surface of the grain boundary layer dielectric ceramic substrate with the TiW thin film, and depositing a layer of the Au thin film on the TiW thin films on two opposite surfaces of the grain boundary layer dielectric ceramic substrate, thereby obtaining a primary substrate; The overall structure of the prefabricated substrate from bottom to top is: the Au film - the TiW film - the grain boundary layer dielectric ceramic substrate - the TaN film - the TiW film - the Au film; wherein the TiW film and the Au film on both sides of the grain boundary layer dielectric ceramic substrate are electrodes; Etching a circuit onto the primary substrate, leaving the TaN film as a resistor film, and making the initial square resistance of the resistor film between 20 and 200 Ω ， Different initial sheet resistance values ​​are obtained by controlling the thickness of the TaN film during sputtering; Then, the square resistance value of the resistor film is precisely adjusted by alternating dry etching and heat treatment baking, thereby obtaining a refined substrate; The electrodes on both sides and the grain boundary layer dielectric ceramic substrate constitute a capacitor part; the resistor film forms a circuit connection with the electrodes on the side to constitute a resistor part; The refined substrate is cut by a dicing machine to form a single resistor and capacitor element integrating resistance and capacitance; and blades with various thicknesses ranging from 30 to 120 μm are used to accurately adjust the electrostatic capacitance value of the single resistor and capacitor element.

2. The miniature high-precision ceramic thin film resistor-capacitor dual-function component according to claim 1, characterized in that: The mixing ratio of argon and nitrogen in the mixed gas is 1:

2.

3. The miniature high-precision ceramic thin film resistor-capacitor dual-function component according to claim 1, characterized in that: The temperature of the heat treatment baking is 300-450°C; The dry etching and the heat treatment baking are performed alternately 1 to 5 times.

4. The miniature high-precision ceramic thin film resistor-capacitor dual-function component according to claim 3, characterized in that: The dry etching and the heat treatment and baking are alternately performed to adjust the square resistance of the resistor film within the range of 5-35Ω.

5. The miniature high-precision ceramic thin film resistor-capacitor dual-function component according to claim 1, characterized in that: By adopting blades with various thicknesses ranging from 30 μm to 120 μm, the electrostatic capacitance value of the single resistor and capacitor element can be adjusted within a range of 10%.

6. A method for manufacturing a miniature high-precision ceramic thin film resistor-capacitor dual-function element according to claim 1, characterized in that: The following steps are involved: S1. Material preparation: Prepare a grain boundary layer dielectric ceramic substrate made of SrTiO3 as the main material, with a dielectric constant in the range of 15000 to 45000 and a thickness of 0.1 to 0.35 mm; S2, cleaning: ultrasonically cleaning the grain boundary layer dielectric ceramic substrate in S1 with pure water and ethanol in sequence to remove oil stains and particles on the surface of the grain boundary layer dielectric ceramic substrate; S3, drying: drying the grain boundary layer dielectric ceramic substrate cleaned in S2 and setting it aside; S4. Sputter coating the dielectric ceramic substrate in the grain boundary layer in three steps: S4.

1. Place the dried grain boundary layer dielectric ceramic substrate obtained in S3 onto a carrier of a magnetron vacuum sputtering machine and into a receiving chamber of the magnetron vacuum sputtering machine. Evacuate the receiving chamber to a pressure of less than 1.0E-3 Pa. S4.

2. Fill the chamber with a mixture of argon and nitrogen until the pressure reaches 1.0E-2Pa; the ratio of argon to nitrogen is 1:2; S4.

3. Using Ta, target sputtering is performed on the grain boundary layer dielectric ceramic substrate using a magnetron vacuum sputtering machine in a mixed gas atmosphere. The sputtering time is controlled within 5 minutes to 30 minutes to deposit a TaN film on the surface of the grain boundary layer dielectric ceramic substrate. The thickness of the TaN film is controlled to be 0.10 to 0.6 μm. S4.

31. When depositing TaN thin films, the magnetron vacuum sputtering machine uses a revolution and rotation motion mode on the grain boundary layer dielectric ceramic substrate to ensure uniformity of TaN film deposition; S4.

4. The chamber is evacuated and then filled with argon gas. The magnetron vacuum sputtering machine is switched to a TiW target. The magnetron vacuum sputtering machine is then used to perform target sputtering to deposit a TiW film on the TaN film on the grain boundary layer dielectric ceramic substrate. S4.

5. Switching to an Au target using a magnetron vacuum sputtering machine, performing target sputtering using the magnetron vacuum sputtering machine to deposit a layer of Au thin film on the TiW film; S5. After the coating step of S4, a photosensitive adhesive is spin-coated on the grain boundary layer dielectric ceramic substrate and dried. S5.

1. Place the grain boundary layer dielectric ceramic substrate obtained in S4 on a carrier plate of a spin coater, drop an appropriate amount of photosensitive adhesive on the grain boundary layer dielectric ceramic substrate, and rotate the grain boundary layer dielectric ceramic substrate at a speed of 2000 rpm / min to evenly coat the surface of the grain boundary layer dielectric ceramic substrate to form a photosensitive adhesive film; S5.

2. Transfer the photosensitive adhesive-coated dielectric ceramic substrate to a 110°C drying table and dry for 1 minute. S6. Expose the dielectric ceramic substrate in the grain boundary layer coated with the photosensitive adhesive film and wash away the residual adhesive: S6.

1. Place the grain boundary layer dielectric ceramic substrate obtained in the adhesive coating step of S5 on the substrate stage of an exposure machine. Then, place a pre-designed mask plate on the grain boundary layer dielectric ceramic substrate to cover the grain boundary layer dielectric ceramic substrate. Expose the grain boundary layer dielectric ceramic substrate for 20 to 40 seconds to form a pattern on the grain boundary layer dielectric ceramic substrate. S6.

2. Soak the grain boundary layer dielectric ceramic substrate in NaOH solution to develop a pattern, and then remove the glue on the surface of the pattern to be etched on the grain boundary layer dielectric ceramic substrate; S7. Remove the two layers of adhesive-free protective patterns from the grain boundary layer dielectric ceramic substrate: S7.

1. Wash the grain boundary layer dielectric ceramic substrate obtained in S6 with a KI / I2 solution to remove the Au film on the surface of the non-adhesive protective pattern; S7.

2. Then, use an oxidizing acid solution to remove the TiW film under the Au film without the protective adhesive pattern, leaving the TaN film as the resistor film. S8. Accurately adjust the square resistance of the grain boundary layer dielectric ceramic substrate: S8.

1. Control the thickness of the TaN film during sputtering to obtain an initial square resistance of the resistor film in the range of 20 to 200 Ω; S8.2, accurately adjusting the square resistance of the resistor film by alternately dry etching and baking at a temperature range of 300-450°C; S9: Cut the grain boundary layer dielectric ceramic substrate to form a single resistor and capacitor element: S9.

1. Place the grain boundary layer dielectric ceramic substrate obtained in S8 on the stage of a circular knife water-cooled dicing machine. Using a blade of predetermined thickness and a dicing scale, remove excess material from the grain boundary layer dielectric ceramic substrate, and dicing to form single resistor and capacitor components. S9.2, by using blades of various thicknesses ranging from 30 to 120 μm, the capacitance of individual RC components can be precisely adjusted; S9.

21. The precise adjustment range of the electrostatic capacitance value of a single resistor and capacitor component is within 10%.

7. The production method according to claim 6, characterized in that: In S4.4: the containing chamber is evacuated to a pressure of 5*10^-4 Pa, the sputtering time of the TiW target is controlled to be 450 seconds, and the deposition thickness of the TiW film is controlled to be 0.02 microns.

8. The manufacturing method according to claim 6, characterized in that: In S4.5: the containing chamber is evacuated to a pressure of 5*10^-4 Pa, the sputtering time of the Au target is controlled to be 900 s, and the deposition thickness of the Au film is controlled to be 0.4 microns.

9. The manufacturing method according to claim 6, characterized in that: In S5.1: Control the thickness of the photosensitive adhesive film to be 7 to 10 microns.

10. The manufacturing method according to claim 6, characterized in that: The oxidizing acid solution includes any one or more combinations of hydrogen peroxide, ammonia water, and diammonium hydrogen phosphate.

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