Voltage-controlled three-terminal magneton transistor and control and preparation method thereof

Abstract

The invention provides a voltage-controlled three-terminal magneton transistor. The voltage-controlled three-terminal magneton transistor comprises a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal and a bottom electrode, after the generation end is electrified, magnetons are generated in the magnetic layer; the detection end is made of a heavy metal material and can convert magnetons in the magnetic layer into charge flow; when the voltage pulse applied between the control end and the bottom electrode exceeds a critical value, the nonvolatile electric polarization and nonvolatile strain state of the ferroelectric layer changes, and then the transmission capacity of magnetons in the magnetic layer is influenced through the magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer. And meanwhile, the voltage signal of the detection end has a regular loop change behavior along with the change of the voltage pulse. Furthermore, the invention also discloses a control method and a preparation method of the device. The three-terminal magneton transistor disclosed by the invention can work in a wide temperature region including room temperature, has a high switch ratio, and is non-volatile.

Description

Technical Field

[0001] The invention belongs to the field of microelectronic information devices, and in particular relates to a voltage-controlled three-terminal magnetic transistor and a control method and a preparation method thereof. Background Art

[0002] The invention of the transistor is a milestone in the development of modern electronic technology. Since the 1960s, the density of transistors in integrated circuits has followed Moore's Law, doubling approximately every two years. However, with the increase in integration density and operating speed, electronic devices face serious power consumption issues, which significantly limits the future development of integrated circuits. Therefore, the further development of transistors cannot rely solely on the charge properties of electrons, but also requires the search for alternative solutions. Magnons are collective excitations of magnetic moments that can carry spin information without the need for the movement of charges. This process does not have additional Joule heating issues. Therefore, magnons are highly anticipated information carriers in the post-Moore era. Given the current obstacles facing transistors, it is very important to design and manufacture low-power magnon transistors.

[0003] like Figure 1As shown, the three-terminal magnon transistor is generally composed of four parts, namely, the magnon generating end 1 (S), the control end 2 (G), the detection end 3 (D) and the medium 4 for transmitting magnons (i.e., the magnon transmission medium). Among the existing technologies, the technology represented by Andrii V. Chumak et al. (Magnon transistor for all-magnon data processing, Nature Communications 5, 4700, 2014) requires a microwave source to generate microwave current and inject it into the generating end, and a vector network analyzer detects magnons at the detection end. The control method is microwave current, which generates a large number of magnons locally, and controls the transmission of magnons from the generating end to the detection end by regulating the scattering between magnons. On the one hand, the microwave source and the vector network analyzer are both expensive; on the other hand, when applying microwave current at the control end to regulate the transmission of magnons, additional Joule heat will be introduced, and it is volatile. The technology represented by LJ Cornelissen et al. (Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor, Physical Review Letters 120, 097702, 2018) generates magnons by passing a low-frequency AC current at the generating end, and detects magnon information through 1x and 2x frequency signals at the detecting end. The control method is DC current. The large DC current passed at the control end to regulate the transmission of magnons will also cause additional Joule heating. The operating temperature is lower than room temperature, at 250 Kelvin, and the switching ratio is low (1.6% / mA). It is also volatile. The technology represented by KSDas et al. (Modulation of magnon spin transport in a magnetic gate transistor, Physical Review B 101, 054436, 2020) has a magnon generation and detection end similar to that of LJCornelissen et al. The control end is an iron-nickel alloy, and the control method is a magnetic field. The magnetic field is applied in the direction perpendicular to the strip to change the direction of the magnetic moment of the iron-nickel alloy relative to the magnetic moment of the transmission medium yttrium iron garnet, thereby affecting the transmission of magnons. The switching ratio is not high (18%) and it is also volatile.In the technology represented by Guangyi Chen et al. (Electrically switchable van der Waals magnon valves, Nature Communications, 12, 6279, 2021), the transmission medium of the device is two-dimensional MnPS3, and the control method is direct current. A large direct current is passed through the control end to affect the transmission of magnons, which will also introduce additional Joule heat and needs to work at extremely low temperatures (2 Kelvin).

[0004] It can be seen that the existing control methods of three-terminal magnetic transistors mainly include microwave current, direct current and magnetic field. These control methods will lead to the generation of additional Joule heat and have the disadvantage of high power consumption. In addition, some of the current device operating temperatures need to be lower than room temperature (their operating temperature is 250 Kelvin) or even extremely low temperatures (their operating temperature is 2 Kelvin), and they are all volatile. Summary of the invention

[0005] To solve the above problems, the present invention provides a voltage-controlled three-terminal magnetic transistor that can operate in a wide temperature range including room temperature (about 300 Kelvin), has a high switching ratio, and is non-volatile. Further, a control method and a preparation method of the voltage-controlled three-terminal magnetic transistor are provided.

[0006] The first aspect of the present invention provides a voltage-controlled three-terminal magnetic transistor, comprising: a ferroelectric layer; a magnetic layer formed on the first surface of the ferroelectric layer; a generating end, a control end and a detecting end formed on the magnetic layer; and a bottom electrode formed on the second surface of the ferroelectric layer, wherein the second surface and the first surface are arranged opposite to each other.

[0007] Among them, the generating end is also constructed as follows: after the current is passed through, magnons are generated in the magnetic layer through the thermal effect; the detecting end is also constructed as follows: it is made of heavy metal materials and can convert the magnons in the magnetic layer into charge flow by utilizing its strong spin-orbit coupling effect; the ferroelectric layer is also constructed as follows: when the voltage pulse applied between the control end and the bottom electrode exceeds the critical value, its non-volatile electric polarization and non-volatile strain state change, thereby affecting the transmission capacity of the magnons in the magnetic layer through the magnetoelectric coupling effect between it and the magnetic layer; the detecting end is also constructed as follows: its voltage signal shows a regular loop change behavior as the voltage pulse changes.

[0008] As an optional solution, the generating end is also constructed as follows: it is made of heavy metal material. After the current is passed, the spin current is generated by the strong spin-orbit coupling effect, and the spin current is converted into magnons after being injected into the magnetic layer.

[0009] As an optional solution, the control end is constructed by: making of metal material.

[0010] As an optional solution, the ferroelectric layer is a ferroelectric substrate, a ferroelectric film or a ferroelectric sheet; the material of the ferroelectric layer is any one of lead magnesium niobate-lead titanate, lead zirconate titanate, barium titanate, potassium dihydrogen phosphate, lead titanate, and lead tungstate, preferably lead magnesium niobate-lead titanate.

[0011] As an optional solution, the ferroelectric layer is a ferroelectric film or a ferroelectric sheet with a thickness of 1 nanometer to 2 millimeters.

[0012] As an optional solution, the magnetic layer is made of a magnetic insulator material; the magnetic insulator material includes yttrium iron garnet ferrite, iron trioxide, and chromium trioxide, preferably yttrium iron garnet ferrite.

[0013] As an optional solution, the thickness of the magnetic layer is 1 nanometer to 100 micrometers, preferably 100±50 nanometers.

[0014] As an optional solution, the bottom electrode is constructed as follows: it is located directly below the control terminal and can cover the control terminal, and is made of a conductive material, and the conductive material includes at least one of platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, silicon, gallium arsenide, gallium nitride, and titanium dioxide.

[0015] The second aspect of the present invention provides a control method for a three-terminal magnetic transistor, based on the three-terminal magnetic transistor described in the first aspect or any one of its optional solutions; comprising: passing a direct current or a low-frequency alternating current through a generating end; applying -V between a control end and a bottom electrode; g1 To V g1 The voltage pulse V g , when the voltage pulse V g Greater than the positive critical value V t When , the transmission capacity of the magnetic particles in the magnetic insulating layer becomes stronger, and the voltage signal V at the detection end becomes larger; V is applied between the control end and the bottom electrode. g1 To -V g1 The voltage pulse V g , when V g Less than the negative threshold -V t When , the transmission capacity of the magnetons becomes weaker, and the voltage signal V at the detection end becomes smaller, thereby achieving a regular loop change behavior of the voltage signal at the detection end as the voltage pulse changes.

[0016] The third aspect of the present invention provides a preparation method for preparing the three-terminal magnetic transistor described in the first aspect or any one of its optional schemes, including: providing a ferroelectric substrate or making a ferroelectric film as a ferroelectric layer; growing a magnetic layer film on the first surface of the ferroelectric layer using a thin film growth technology; using ultraviolet lithography, electron beam exposure technology or etching technology and coating technology to make a generating end, a control end and a detection end arranged side by side in sequence on the magnetic insulator layer film; and finally growing a bottom electrode on the second surface of the ferroelectric layer.

[0017] The present invention has the following beneficial effects:

[0018] (1) The voltage-controlled three-terminal magnetic transistor disclosed in the present invention adopts a unique structural design. The metal material, magnetic layer and ferroelectric layer contained in the device can operate in a wide temperature range including room temperature, and has a wider range of use without being restricted to working in a low temperature environment or an extremely low temperature environment.

[0019] (2) The voltage-controlled three-terminal magnetic transistor disclosed in the present invention is controlled by voltage. The voltage applied between the magnetic layer and the ferroelectric layer will not cause the generation of current, so no additional Joule heat will be generated. It is also more energy-efficient and can solve the problem of additional power consumption caused by the use of microwave current, direct current, or external magnetic field as the control method.

[0020] (3) The present invention makes use of the magnetoelectric coupling effect of the ferroelectric layer and the magnetic layer. When the applied voltage exceeds the critical value, the non-volatile electric polarization and non-volatile strain state of the ferroelectric layer will change, and the magnetoelectric coupling effect will further affect the physical properties of the magnetic layer (such as magnetic anisotropy, magnetic exchange constant, damping coefficient, attenuation length, etc.), thereby affecting the transmission capacity of the magnon in the magnetic layer, and ultimately affecting the strength of the magnon arriving at the detection end. Accordingly, the greater the efficiency of voltage regulation on the properties of the magnetic layer, the greater the corresponding change in the strength of the magnon arriving at the detection end, that is, a large switching ratio is achieved. Since the regulation of the electric polarization and strain of the ferroelectric layer is non-volatile, after the applied voltage is removed, the state of the electric polarization and strain will be maintained, thereby achieving non-volatile operation of the magnon transmission capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Schematic diagram of the structure of a three-terminal magnetic transistor in the prior art, wherein: (a) is a top view, (b) is a cross-sectional view; Figure 1 Label instructions: 1-magnetic generation end (S), 2-magnetic control end (G), 3-magnetic detection end (D), 4-magnetic transmission medium.

[0022] Figure 2 Schematic diagram of the structure of a three-terminal magnetic transistor in an embodiment;

[0023] Figure 3Schematic diagram of the preparation process of the three-terminal magnetic transistor in the embodiment;

[0024] Figure 4 Schematic diagram of the operation of a three-terminal magnetic transistor in an embodiment, wherein: (a) is a top view, and (b) is a side view;

[0025] Figure 5 A schematic diagram of a curve showing the change of a voltage signal detected by a three-terminal magnetic transistor with a voltage pulse in an embodiment;

[0026] Figure 6 The curve experimental data of the voltage signal detected by the three-terminal magnetic transistor in the embodiment changes with the voltage pulse.

[0027] Figure 2 , Figure 3 , Figure 4 The markings in the figure are as follows: 1- ferroelectric layer, 2- magnetic layer, 3- generating end, 4- controlling end, 5- detecting end, 6- bottom electrode, 7- current source for applying current, 8- voltmeter for detecting voltage signal, 9- voltage source for applying voltage pulse. DETAILED DESCRIPTION

[0028] The following will be combined with specific embodiments and appendix Figures 2 to 6 The technical solution of the present invention is described clearly and completely. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] like Figure 2 As shown, Example 1 provides a voltage-controlled three-terminal magnon transistor, which is mainly composed of a ferroelectric layer 1, a magnetic layer 2, a generating terminal 3, a control terminal 4, a detection terminal 5 and a bottom electrode 6. Among them, the ferroelectric layer 1, that is, a ferroelectric substrate, a ferroelectric film or a ferroelectric sheet, can change its electric polarization and strain state by applying voltage, and then regulate the efficiency of magnon transmission in the magnetic insulator layer through the magnetoelectric coupling effect of the ferroelectric ferromagnetic system. The materials that can be used for the ferroelectric layer 1 include lead magnesium niobate-lead titanate (PMN x -PT 1-x), lead zirconate titanate (PZT), barium titanate (BaTiO3), potassium dihydrogen phosphate (KH2PO4), lead titanate (PbTiO3), lead tungstate (PbZrO3), etc. Lead magnesium niobate-lead titanate is preferred, which has a wide operating temperature range, strong piezoelectric effect, and mature preparation technology. The device is insensitive to the thickness of the ferroelectric layer 1. Ferroelectric substrates with a thickness of millimeters can be purchased directly through commercial means, and ferroelectric films or ferroelectric sheets with a thickness of 1 nanometer to 2 millimeters can also be grown on a suitable substrate (such as a silicon wafer). Compared with ferroelectric substrates, the advantage of using ferroelectric films is that only a very small voltage needs to be applied to achieve the same electric field strength.

[0030] The magnetic layer 2 is a magnon transmission medium. The magnon transmission medium can be obtained by growing a magnetic film on the ferroelectric layer 1 through a thin film growth device. Specifically, a magnetic material with a magnetic ordering temperature higher than room temperature, a small damping coefficient, and a long magnon transmission distance can be selected to prepare the magnetic film. Considering that the damping factor of a magnetic insulator is generally lower than that of a magnetic metal, and the transmission distance of a magnon is generally greater than that of a magnetic metal, it is preferred that a magnetic insulator material be used to prepare the magnetic layer 2. For example, yttrium iron garnet ferrite (Y3Fe5O 12 , referred to as YIG), iron (Fe2O3), chromium (Cr2O3), etc., among which YIG is the preferred material in magnetic insulators, with the advantages of mature preparation technology, wide operating temperature range, very small damping factor, and long magnon transmission distance. The thickness of the magnetic insulator layer film is usually between 1 nanometer and 100 microns, preferably 100±50 nanometers. Within this range, the properties of the magnetic film are close to those of the bulk material, with a small damping coefficient and a long magnon transmission distance, while the magnetoelectric coupling effect will not be attenuated too much.

[0031] The generating end 3, the control end 4 and the detection end 5 are all micro strips formed on the surface of the magnetic layer 2. The generating end 3 and the control end 4 can be made of conductive materials, for example, metal conductive materials such as platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, titanium dioxide, or non-metallic conductive materials such as silicon, gallium arsenide, gallium nitride. After the current is passed through the generating end 3, magnons are generated in the magnetic layer 2 through thermal effects (for example, spin Seebeck effect). The detection end 5 is made of heavy metal materials, such as platinum, gold, palladium, tungsten, tantalum, etc., for detecting magnons. As a preferred embodiment, the generating end 3 is made of heavy metal, so that the thermal effect caused by heating can be used to generate magnons in the magnetic layer 2, and the strong spin-orbit coupling can be used to generate spin currents and convert them into magnons in the insulator layer 2. Further, considering the simplicity of process implementation, the three terminals of the generating end 3, the control end 4 and the detection end 5 can be made of the same heavy metal material, so that only one exposure and coating are required. The size and spacing of the three microstrips can be designed in a conventional manner. For example, the strip length is 10 microns, the width is 0.5 microns, and the strip spacing is 0.5 microns. In actual applications, the size and spacing of the microstrips can be further reduced as needed. When reducing the size, it is not necessary to do it proportionally according to the above example.

[0032] The bottom electrode 6 is formed on the side opposite to the ferroelectric layer 1 and the magnetic layer 2. The bottom electrode 6 is an electrode for applying voltage, and can be made of a conductive material, such as platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium and other conductive metals, or semiconductor materials such as silicon, gallium arsenide, gallium nitride, titanium dioxide and the like. The bottom electrode 6 is preferably located directly below the control terminal 4, and its size can be similar to that of the control terminal 4. Preferably, the bottom electrode 6 is arranged in correspondence with the control terminal 4 and can cover the control terminal 4.

[0033] The working principle of the three-terminal magnetic transistor described in Example 1 is as follows: Figure 4 As shown in (a), a current source 7 is used to pass a direct current (or a low-frequency alternating current) I into the generating end 3. The generating end 3 is a conductive material. Spin current can be injected into the magnetic layer 2 in two ways: 1) The current in the generating end 3 will cause the magnetic layer 2 to heat up, establish a temperature gradient, and generate magnons in the magnetic layer through thermal effects. The polarization direction of these magnons can be adjusted by the in-plane magnetic field μ0H; 2) If the generating end 3 is a heavy metal material, its strong spin-orbit coupling can also be used to make the charge flow directly generate spin currents and convert them into magnons in the magnetic layer 2. The polarization direction of these magnons is controlled by the direction of the charge flow in the generating end 3. The magnons are transmitted to the right in the magnetic layer 2 and reach the detection end 5. The detection end 5 made of heavy metal material converts the magnons into charge flow by using its strong spin-orbit coupling, and the voltage signal V of the detection end 5 can be obtained by using a voltmeter 8 (or a phase-locked amplifier).

[0034] like Figure 4 As shown in (b), based on Figure 4 In the three-terminal magnon transistor shown in (a), when the electric field strength generated by the applied voltage in the ferroelectric layer exceeds the critical value, the non-volatile electric polarization and non-volatile strain state of the ferroelectric layer will change. Among them, the critical electric field strength is an intrinsic property of the ferroelectric material, and its value mainly depends on the choice of material. Since the electric field is equal to the voltage divided by the distance between the control terminal 4 and the bottom electrode 6, the critical value of the voltage is also related to the thickness of the ferroelectric layer and the magnetic transmission layer. For the same device, since the material and thickness are fixed values, the voltage strength is linearly related to the voltage. That is to say, a voltage pulse V is applied between the control terminal 4 and the bottom electrode 6. g , when V g When the critical voltage is exceeded (i.e., the absolute value is greater than the absolute value of the critical voltage), the polarization and strain of the ferroelectric layer 1 will change, thereby affecting the magnon transmission capability of the magnetic layer 2 through the magnetoelectric coupling effect between the ferroelectric layer 1 and the magnetic layer 2. Since the changes in the polarization and strain in the ferroelectric layer 1 are non-volatile, the polarization and strain state of the ferroelectric layer 1 can be maintained even after the voltage pulse is removed, thereby achieving non-volatile regulation of the magnon transmission capability of the magnetic layer 2.

[0035] Specifically, -V is applied between the control terminal 4 and the bottom electrode 6. g1 To V g1 The voltage pulse width can be selected between 1 nanosecond and 10 seconds. The pulse waveform is not limited and can be step-shaped, oblique line, ladder-shaped, etc. When the voltage is greater than the positive critical value V t When the polarization and strain in the ferroelectric layer 1 change, the magneton transmission ability in the magnetic layer 2 becomes stronger through magnetoelectric coupling. It is experimentally observed that the voltage signal V at the detection end 5 becomes larger. When V is applied g1 To -V g1 When the voltage is lower than the negative threshold value -V t When the voltage pulse V g The change of V and V g Dependencies such as Figure 5 shown.

[0036] Combination Figure 6As shown, in one embodiment, for lead magnesium niobate-lead titanate (ferroelectric layer 1) with a thickness of 0.5 mm and yttrium iron garnet ferrite (magnetic layer 2) with a thickness of 100 nanometers, voltage pulses of different values ​​from negative 200 volts to positive 200 volts and then to negative 200 volts can be applied, the width of the voltage pulse is 10 seconds, the pulse waveform is an oblique linear, and the voltage signal actually measured by the detection end 5. It can be seen that the voltage signal V measured by the detection end 5 changes significantly at positive 150 volts and negative 100 volts, which corresponds to the change of the electric polarization and strain state of lead magnesium niobate-lead titanate, thereby affecting the transmission capacity of the magnetons in the yttrium iron garnet ferrite.

[0037] Combination Figure 3 As shown, Example 2 discloses a method for preparing a device, which is used to prepare the three-terminal magnetic transistor described in Example 1. The method mainly includes the following steps:

[0038] Step 1: using a commercially purchased 0.5 mm thick lead magnesium niobate-lead titanate single crystal substrate as a carrier of the device, thereby obtaining a ferroelectric layer 1;

[0039] Step 2: growing a magnetic layer thin film on the front side of the ferroelectric layer 1 by using a thin film growth technique, for example, growing yttrium iron garnet ferrite with a thickness of 100 nanometers;

[0040] Step 3: Use ultraviolet lithography, electron beam exposure technology or etching technology and coating technology to make three nanometer-thick metal strips on the magnetic layer film, for example, platinum with a length of 10 microns, a width of 0.5 microns, a strip spacing of 0.5 microns, and a thickness of 5 nanometers;

[0041] Step 4: On the back side of the ferroelectric layer 1, a bottom electrode 6 is grown facing the control terminal 4. For example, gold with a thickness of 100 nanometers is grown as the bottom electrode 6, thereby forming a target three-terminal magneton transistor.

[0042] Finally, it should be noted that although the examples of the present invention have been shown and described as much as possible, those skilled in the art can still refer to the aforementioned examples to modify and improve the present invention, which should all be included in the scope of protection of the present invention.

Claims

1. A voltage-controlled three-terminal magnetic transistor, characterized in that: include: ferroelectric layer; a magnetic layer formed on a first surface of the ferroelectric layer; A generating end, a controlling end and a detecting end are formed on the magnetic layer, wherein the detecting end is made of heavy metal material; A bottom electrode is formed on the second surface of the ferroelectric layer, wherein the second surface is arranged opposite to the first surface.

2. The three-terminal magnetic transistor according to claim 1, characterized in that: The generating end is also configured to: generate magnetic particles in the magnetic layer through thermal effect after current is passed through the magnetic layer; The detection end is also constructed to: utilize its strong spin-orbit coupling to convert the magnons in the magnetic layer into charge flow; The ferroelectric layer is also constructed such that when a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, its nonvolatile electric polarization and nonvolatile strain state change, thereby affecting the transmission capacity of the magnetic ions in the magnetic layer through the magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer; The detection end is also constructed so that the detected voltage signal can show regular loop change behavior along with the change of voltage pulse.

3. The three-terminal magnetic transistor according to claim 2, characterized in that: The generating end is made of heavy metal material; the generating end is also constructed to generate spin current by strong spin-orbit coupling after current is passed through, and the spin current is transformed into magnon after being injected into the magnetic layer.

4. The three-terminal magnetic transistor according to claim 3, characterized in that: The control end is constructed by selecting heavy metal materials.

5. The three-terminal magnetic transistor according to any one of claims 1 to 4, characterized in that: The ferroelectric layer is a ferroelectric substrate, a ferroelectric film or a ferroelectric sheet; the material of the ferroelectric layer is any one of lead magnesium niobate-lead titanate, lead zirconate titanate, barium titanate, potassium dihydrogen phosphate, lead titanate and lead tungstate.

6. The three-terminal magnetic transistor according to claim 5, characterized in that: The ferroelectric layer is a ferroelectric film or a ferroelectric sheet with a thickness of 1 nanometer to 2 millimeters; the ferroelectric layer is lead magnesium niobate-lead titanate.

7. The three-terminal magnetic transistor according to any one of claims 1 to 4, characterized in that: The magnetic layer is made of a magnetic insulator material; the magnetic insulator material includes yttrium iron garnet ferrite, ferric oxide, and chromium oxide, preferably yttrium iron garnet ferrite; the magnetic layer is yttrium iron garnet ferrite; the thickness of the magnetic layer is 1 nanometer to 100 microns, preferably 100±50 nanometers.

8. The three-terminal magnetic transistor according to any one of claims 1 to 4, characterized in that: The bottom electrode is constructed as follows: it is located directly below the control terminal and can cover the control terminal, and is made of a conductive material, wherein the conductive material includes at least one of platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, silicon, gallium arsenide, gallium nitride, and titanium dioxide.

9. A control method for a three-terminal magnetic transistor, characterized in that: A voltage-controlled three-terminal magnetic transistor according to any one of claims 1 to 8; comprising: A direct current or a low-frequency alternating current is passed through the generating end; Apply -V between the control terminal and the bottom electrode g1 To V g1 The voltage pulse V g , when the voltage pulse V g Greater than the positive critical value V t When , the transmission capacity of the magnetic particles in the magnetic insulating layer becomes stronger, and the voltage signal V at the detection end becomes larger; V is applied between the control end and the bottom electrode. g1 To -V g1 The voltage pulse V g , when V g Less than the negative threshold -V t When , the transmission capacity of the magnetons becomes weaker, and the voltage signal V at the detection end becomes smaller, thereby achieving a regular loop change behavior of the voltage signal at the detection end as the voltage pulse changes.

10. A preparation method, characterized in that: A method for preparing a voltage-controlled three-terminal magnetic transistor as claimed in any one of claims 1 to 8, comprising: Providing a ferroelectric substrate or making a ferroelectric thin film as a ferroelectric layer; Growing a magnetic layer thin film on the first surface of the ferroelectric layer using a thin film growth technique; Using ultraviolet lithography, electron beam exposure technology or etching technology and coating technology to make a generating end, a control end and a detecting end arranged in sequence on the magnetic insulator layer film; Finally, a bottom electrode is grown on the second surface of the ferroelectric layer.

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