Adhesive film, adhesive tape, adhesive tape with release film, method for manufacturing semiconductor device, and semiconductor device

Abstract

An adhesive film for bonding a semiconductor chip to a substrate and sealing a gap between the semiconductor chip and the substrate, in which the adhesive film is a single-layer film formed from an adhesive composition having photocuring and thermosetting properties.

Description

Technical Field

[0001] The present invention relates to an adhesive film, an adhesive tape, an adhesive tape with a release film, a method for manufacturing a semiconductor device, and a semiconductor device. Background Art

[0002] In the past, wire bonding using fine metal wires such as gold wires was widely used to connect semiconductor chips to substrates. On the other hand, in order to meet the requirements for high functionality, high integration, and high speed of semiconductor devices, a flip chip connection method (FC connection method) is expanding, which forms conductive protrusions called bumps on semiconductor chips or substrates to directly connect semiconductor chips to substrates.

[0003] For example, regarding the connection between a semiconductor chip and a substrate, the COB (Chip On Board) type connection method widely used in BGA (Ball Grid Array) and CSP (Chip Size Package) also belongs to the FC connection method. In addition, the FC connection method also widely uses the COC (Chip On Chip) type connection method in which a connection portion (e.g., bumps and wiring) is formed on a semiconductor chip to connect semiconductor chips.

[0004] In addition, in the strong demand for further miniaturization, thinning and high-functionality packaging, chip stacking packages, POP (Package On Package), TSV (Through-Silicon Via), etc., which use the above-mentioned connection method to stack chips and multi-level, have also become widely popular. Since semiconductor chips and other components are configured in three dimensions in this stacking / multi-level technology, the package can be reduced compared to the two-dimensional configuration method. In addition, since it is also effective in improving semiconductor performance, reducing noise, reducing mounting area, and saving power, it has attracted much attention as a new era of semiconductor wiring technology.

[0005] In addition, from the perspective of improving productivity, COW (Chip On Wafer) is also attracting attention, which is a method of making semiconductor packages by pressing (connecting) semiconductor chips on a semiconductor wafer and then singulating them. In addition, from the same perspective, the gang bonding method is also attracting attention, which is a method of aligning and temporarily pressing multiple semiconductor chips on a semiconductor wafer or a board map, and then officially pressing these multiple semiconductor chips together to ensure connection.

[0006] When connecting components such as semiconductor chips as described above, a thermosetting adhesive film that exhibits appropriate fluidity at the temperature during connection is used, and the adhesive film is cured by heating during connection (during crimping), so that the connecting components are connected to each other (for example, refer to Patent Document 1).

[0007] Previous technical literature

[0008] Patent Literature

[0009] Patent Document 1: Japanese Patent Application Publication No. 2008-294382 Summary of the invention

[0010] Technical issues to be solved by the invention

[0011] In recent years, as the gaps between layers and the spacing between wirings have become narrower with the high functionality and high integration of packages, it has become easy to form fillets (overflowing parts) due to the overflow of the adhesive flowing from the ends of the connecting parts (for example, semiconductor chips) during connection. Since the fillets may cause damage to the connecting parts, it is necessary to develop a method to reduce the amount of fillets generated while ensuring the conductivity (connection reliability) between the connecting parts.

[0012] Therefore, a main object of the present invention is to provide an adhesive film for a semiconductor that can suppress the amount of rounding generated.

[0013] Means for solving technical problems

[0014] The present invention provides the following [1] to

[14] . [1]

[0016] An adhesive film is used to bond a semiconductor chip to a substrate and seal a gap between the semiconductor chip and the substrate, wherein:

[0017] The adhesive film is a single-layer film formed of an adhesive composition having photocurability and thermocurability. [2]

[0019] The adhesive film according to [1], wherein

[0020] The adhesive composition contains a photopolymerizable compound, a photopolymerization initiator, a thermosetting resin and a thermosetting agent. [3]

[0022] The adhesive film according to [2], wherein

[0023] The photopolymerizable compound is a radical polymerizable compound, and the photopolymerization initiator is a photoradical polymerization initiator. [4]

[0025] The adhesive film according to [3], wherein

[0026] The radical polymerizable compound includes a (meth)acrylic acid compound. [5]

[0028] The adhesive film according to any one of [2] to [4], wherein

[0029] The thermosetting resin includes an epoxy resin. [6]

[0031] The adhesive film according to [5], wherein

[0032] The thermal curing agent includes an imidazole curing agent. [7]

[0034] The adhesive film according to [6], wherein

[0035] The imidazole curing agent has a triazine ring. [8]

[0037] The adhesive film according to any one of [2] to [7], wherein

[0038] The mass ratio of the content of the thermosetting resin to the content of the photopolymerizable compound in the adhesive composition is 3 to 11. [9]

[0040] An adhesive tape comprising:

[0041] The adhesive film according to any one of [1] to [8]; and

[0042] A back grinding tape is disposed on the adhesive film.

[10]

[0044] An adhesive tape with a release film, comprising:

[0045] [9] The adhesive tape described above; and

[0046] The peeling film is disposed on the adhesive tape and is located on the side opposite to the back grinding tape when viewed from the adhesive film.

[11]

[0048] A method for manufacturing a semiconductor device, comprising:

[0049] a light irradiation step of irradiating light onto the adhesive film according to any one of [1] to [8]; and

[0050] The semiconductor chip and the substrate on which the semiconductor chip is mounted are arranged so that the connection portion thereof faces each other via the light-irradiated adhesive film, and then heated and bonded.

[0051] The light irradiation step is performed in a state where the adhesive film is attached to the connection surface of the semiconductor chip or its precursor or the connection surface of the substrate or its precursor.

[12]

[0053] The method for manufacturing a semiconductor device according to

[11] , further comprising:

[0054] A lamination step of preparing an adhesive tape and attaching the adhesive tape to a connection surface of a precursor of the semiconductor chip or a precursor of the substrate from the adhesive film side, the adhesive tape comprising the adhesive film and a back grinding tape provided on the adhesive film; and

[0055] A back grinding step of grinding the precursor to which the adhesive tape is attached from a side opposite to the adhesive tape.

[13]

[0057] The method for manufacturing a semiconductor device according to

[12] , wherein:

[0058] The light irradiation step is performed after the back grinding step and after the back grinding tape is removed.

[14]

[0060] A semiconductor device comprises: a semiconductor chip having a first connection portion; a substrate having a second connection portion electrically connected to the first connection portion; and a sealing portion for bonding the semiconductor chip and the substrate and filling a gap between the semiconductor chip and the substrate.

[0061] The sealing portion is a cured product of the adhesive film according to any one of [1] to [8].

[0062] Effects of the Invention

[0063] According to the present invention, it is possible to provide an adhesive film for a semiconductor capable of suppressing the amount of rounding generated. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] Figure 1 This is a schematic cross-sectional view showing one embodiment of the adhesive tape with a release film of the present invention.

[0065] Figure 2 (a) is a schematic cross-sectional view showing an embodiment of a semiconductor device of the present invention, Figure 2 (b) is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention.

[0066] Figure 3 It is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention.

[0067] Figure 4 The present invention is a cross-sectional view schematically showing a process of one embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0068] Figure 5 The present invention is a cross-sectional view schematically showing a process of one embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0069] Figure 6 The present invention is a cross-sectional view schematically showing a process of one embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0070] Figure 7 The present invention is a cross-sectional view schematically showing a process of one embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0071] Figure 8 The present invention is a cross-sectional view schematically showing a process of one embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0072] Fig. 9 The present invention is a cross-sectional view schematically showing a process of one embodiment of a method for manufacturing a semiconductor device according to the present invention.

[0073] Fig.10 The present invention is a cross-sectional view schematically showing a process of one embodiment of a method for manufacturing a semiconductor device according to the present invention. DETAILED DESCRIPTION

[0074] In this specification, "(meth)acrylic acid" means at least one of acrylic acid and its corresponding methacrylic acid. The same applies to other similar expressions such as "(meth)acryloyl", "(meth)acrylate", etc. In addition, the numerical range represented by "~" represents a range that includes the numerical values ​​recorded before and after "~" as the minimum value and the maximum value, respectively. In addition, in the numerical range described in this specification, the upper limit or lower limit of the numerical range can be replaced by the value shown in the embodiment. In addition, the upper limit and lower limit recorded individually can be combined arbitrarily. In addition, the materials exemplified below can be used alone or in combination of two or more unless otherwise specified. In the case where there are multiple substances equivalent to each component in the composition, unless otherwise specified, the content of each component in the composition represents the total amount of the multiple substances present in the composition.

[0075] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings as appropriate. In addition, in the accompanying drawings, the same or equivalent parts are marked with the same symbols, and repeated descriptions are omitted. Furthermore, regarding positional relationships such as up, down, left, and right, unless otherwise specified, they are assumed to be based on the positional relationships shown in the accompanying drawings. In addition, the dimensional ratios of the accompanying drawings are not limited to the ratios shown in the drawings.

[0076] <Adhesive film>

[0077] An adhesive film according to one embodiment is used to bond a semiconductor chip to a substrate and seal a gap between the semiconductor chip and the substrate, wherein the adhesive film is a single-layer film formed of an adhesive composition having photocurability and thermocurability.

[0078] Since the above-mentioned adhesive film has photocurability, it is easy to have low fluidity locally by irradiation with light. Specifically, for example, by irradiating light after attaching the above-mentioned adhesive film to one of the two connecting parts (semiconductor chip, substrate or their precursors), the fluidity of the adhesive constituting the adhesive film can be reduced. Moreover, compared with the curing method based on heating, etc., in the curing method based on light irradiation, by adjusting the types of components contained in the adhesive film and the conditions of light irradiation, it is easy to adjust to the desired fluidity. Therefore, according to the adhesive film, the fluidity required for connecting the connecting parts to each other can be maintained, and the excessive flow of the adhesive can be suppressed, and as a result, the amount of fillet generation can be suppressed. Moreover, since the above-mentioned adhesive film has thermosetting properties in addition to photocurability, it can be further cured by heating after photocuring (thermosetting), so that the connecting parts can be joined to each other with sufficient strength.

[0079] Furthermore, the inventors of the present invention have found from the results of their research that, in an adhesive film having a multilayer structure including a layer not having photocurability and a layer having photocurability, the generation of rounded corners can be suppressed as in the adhesive film of the above embodiment, but voids are more likely to be generated than in the adhesive film of the above embodiment. In other words, the adhesive film according to the above embodiment has a reduced tendency to generate voids compared to an adhesive film having a multilayer structure including a layer not having photocurability and a layer having photocurability.

[0080] (Adhesive composition)

[0081] The adhesive composition constituting the adhesive film contains, for example, a photopolymerizable compound, a photopolymerization initiator, a thermosetting resin, and a thermosetting agent. The "photopolymerizable compound" refers to a compound that polymerizes by active species (free radicals, cations, or anions) generated by a photopolymerization initiator under irradiation with light (e.g., ultraviolet light), and the "thermosetting resin" refers to a compound that cures by reacting with a thermosetting agent under heat.

[0082] [Photopolymerizable compound]

[0083] The photopolymerizable compound may be a free radical polymerizable compound, a cationic polymerizable compound, or an anionic polymerizable compound. The polymerizability of the photopolymerizable compound may be selected based on the relationship between the curability of the thermosetting resin and the thermosetting agent in a manner that does not hinder the reaction of the thermosetting resin and the thermosetting agent. For example, when the thermosetting resin has cationic curability or anionic curability, it is preferred to use a free radical polymerizable compound as the photopolymerizable compound.

[0084] From the viewpoint of reaction rate, the photopolymerizable compound is preferably a radical polymerizable compound. In this case, a photoradical polymerization initiator is used as the photopolymerization initiator.

[0085] As free radical polymerizable compounds, for example, (meth) acrylic acid compounds, vinyl compounds, etc. can be cited. As free radical polymerizable compounds, (meth) acrylic acid compounds are preferred from the viewpoint of excellent durability, electrical insulation and heat resistance. (Meth) acrylic acid compounds can be any compound having one or more (meth) acryloyl groups in the molecule. As (meth) acrylic acid compounds, for example, bisphenol A type, bisphenol F type, naphthalene type, phenol novolac type, cresol novolac type, phenol aralkyl type, biphenyl type, triphenylmethane type, dicyclopentadiene type, fluorene type, (meth) acrylic acid compounds containing adamantane type or isocyanuric acid type skeletons; various multifunctional (meth) acrylic acid compounds (excluding (meth) acrylic acid compounds containing the skeletons) and the like can be used. Examples of the polyfunctional (meth)acrylic compound include pentaerythritol tri(meth)acrylate, dipentaerythritol poly(meth)acrylate (dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, etc.), trimethylolpropane di(meth)acrylate, etc. Among them, polyfunctional (meth)acrylic compounds are preferred, and dipentaerythritol poly(meth)acrylate is more preferred. The number of functional groups (the number of (meth)acryloyl groups) of the polyfunctional (meth)acrylic compound is preferably 2 to 8, more preferably 3 to 7, and even more preferably 4 to 6.

[0086] The molecular weight of the photopolymerizable compound is, for example, 400 to 2000. The molecular weight of the photopolymerizable compound is preferably less than 2000, more preferably 1000 or less. The smaller the molecular weight of the photopolymerizable compound, the easier it is to react, and the higher the curing reaction rate.

[0087] The photopolymerizable compound can be used alone or in combination of two or more.

[0088] From the viewpoint of further reducing the amount of fillet generation, the content of the photopolymerizable compound is based on the total amount of the adhesive composition, preferably 1% by mass or more, more preferably 3% by mass or more, and more preferably 5% by mass or more. From the viewpoint of improving the sealing performance and inhibiting the generation of voids, the content of the photopolymerizable compound is based on the total amount of the adhesive composition, preferably 10% by mass or less, more preferably 7% by mass or less, and more preferably 5% by mass or less. From these viewpoints, the content of the photopolymerizable compound is based on the total amount of the adhesive composition, preferably 1 to 10% by mass, more preferably 3 to 7% by mass, and more preferably 3 to 5% by mass.

[0089] [Photopolymerization initiator]

[0090] The photopolymerization initiator can be selected according to the type of the photopolymerizable compound, and may be a photoradical polymerization initiator, a photocationic polymerization initiator, or a photoanionic polymerization initiator. As the photopolymerization initiator, a photoradical polymerization initiator is preferably used for the same reason as the photopolymerizable compound.

[0091] The photoradical polymerization initiator is a compound that decomposes and generates free radicals by irradiation with light (e.g., ultraviolet light), and the light is, for example, light with a wavelength in the range of 150 to 750 nm, preferably light with a wavelength in the range of 254 to 405 nm, and more preferably light with a wavelength of 365 nm. As the photoradical polymerization initiator, one compound may be used alone, or a combination of multiple compounds may be used.

[0092] Examples of the photoradical polymerization initiator include alkylphenone-based photopolymerization initiators, α-aminoalkylketone-based photopolymerization initiators, and phosphine oxide-based photopolymerization initiators. Among them, alkylphenone-based photopolymerization initiators are preferred from the viewpoint of reactivity, and α-hydroxyacetophenone photopolymerization initiators are more preferred.

[0093] Examples of the alkylphenone-based photopolymerization initiator include 1-hydroxycyclohexyl benzophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-one, and 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropanoyl)benzyl]phenyl}-2-methylpropan-1-one.

[0094] The molecular weight of the photoradical polymerization initiator is preferably 400 or more (eg, 300 to 600) from the viewpoint of suppressing volatilization due to heat during film formation, lamination, and the like.

[0095] From the viewpoint of being easy to fully cure, the content of the photopolymerization initiator in the adhesive composition is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, and further preferably 1.0 parts by mass or more relative to 100 parts by mass of the photopolymerizable compound. From the viewpoint of suppressing the shortening of the molecular chain and the residual unreacted groups due to the rapid curing reaction, the content of the photopolymerization initiator is preferably 5.0 parts by mass or less, more preferably 3.0 parts by mass or less, and further preferably 1.5 parts by mass or less relative to 100 parts by mass of the photopolymerizable compound. From these viewpoints, the content of the photopolymerization initiator is preferably 0.1 to 5.0 parts by mass, more preferably 0.5 to 3.0 parts by mass, and further preferably 0.5 to 1.5 parts by mass relative to 100 parts by mass of the photopolymerizable compound. From the same viewpoint as above, the content of the photoradical polymerization initiator in the adhesive composition is preferably 0.1 to 5.0 parts by mass, more preferably 0.5 to 3.0 parts by mass, and further preferably 0.5 to 1.5 parts by mass relative to 100 parts by mass of the radical polymerizable compound.

[0096] [Thermosetting resin]

[0097] As thermosetting resin, for example, epoxy resin, phenolic resin (except for the case where it is contained as a curing agent), acrylic resin, etc. can be cited. Among them, epoxy resin is preferably used. In the thermosetting resin, the content of epoxy resin is based on the total amount of thermosetting resin, preferably 80% by mass or more, more preferably 90% by mass or more. The content of epoxy resin is based on the total amount of thermosetting resin, and can be 100% by mass.

[0098] Epoxy resin is a compound having more than two epoxy groups in the molecule. As epoxy resin, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, triphenylmethane type epoxy resin, trisphenol methane type epoxy resin, dicyclopentadiene type epoxy resin and various multifunctional epoxy resins can be used. They can be used alone or as a mixture of more than two kinds. Among them, when using trisphenol methane type epoxy resin (epoxy resin containing trisphenol methane skeleton), there is a tendency to further reduce the amount of rounded corners.

[0099] As for the epoxy resin, from the viewpoint of suppressing the generation of volatile components due to decomposition during connection at high temperature, it is preferred to use an epoxy resin having a thermal weight loss rate of 5% or less at the temperature during connection. For example, when the temperature during connection is 250°C, it is preferred to use an epoxy resin having a thermal weight loss rate of 5% or less at 250°C, and when the temperature during connection is 300°C, it is preferred to use an epoxy resin having a thermal weight loss rate of 5% or less at 300°C.

[0100] As the epoxy resin, from the viewpoint of easily suppressing the generation of cracks and fissures on the film surface, an epoxy resin that is liquid at 25°C (hereinafter referred to as "liquid epoxy resin") can be used. Here, "liquid at 25°C" means that the viscosity at 25°C measured by an E-type viscometer is 400 Pa·s or less. Examples of the liquid epoxy resin include bisphenol A glycidyl ether, bisphenol AD ​​glycidyl ether, bisphenol S glycidyl ether, bisphenol F glycidyl ether, hydrogenated bisphenol A glycidyl ether, ethylene oxide adduct bisphenol A glycidyl ether, propylene oxide adduct bisphenol A glycidyl ether, glycidyl ether of naphthalene resin, trifunctional or tetrafunctional glycidyl amine, and the like.

[0101] From the viewpoint of easily suppressing the generation of cracks and cracks on the film surface, the content of the liquid epoxy resin in the thermosetting resin is based on the total amount of the thermosetting resin, preferably 5% by mass or more, more preferably 10% by mass or more, and more preferably 20% by mass or more. From the viewpoint of easily suppressing the excessive increase in the viscosity (tackiness) of the film and the viewpoint of easily suppressing edge fusion (edge ​​fusion), the content of the liquid epoxy resin in the thermosetting resin is based on the total amount of the thermosetting resin, preferably 30% by mass or less, more preferably 20% by mass or less, and more preferably 10% by mass or less. From these viewpoints, the content of the liquid epoxy resin in the thermosetting resin is based on the total amount of the thermosetting resin, preferably 5 to 30% by mass.

[0102] The reactive functional group equivalent of the thermosetting resin (for example, the epoxy equivalent of the epoxy resin) may be 100 to 3000 g / eq, 100 to 2000 g / eq, or 100 to 1500 g / eq. If the reactive functional group equivalent is within the above range, the balance between reactivity and fluidity during heating is likely to be good.

[0103] From the viewpoint of easily suppressing the generation of fillets, the content of the thermosetting resin in the adhesive composition is based on the total amount of the adhesive composition, preferably 25% by mass or more, more preferably 30% by mass or more, and more preferably 35% by mass or more. From the viewpoint of easily obtaining good sealing properties and the viewpoint of easily suppressing the generation of voids, the content of the thermosetting resin in the adhesive composition is based on the total amount of the adhesive composition, preferably 50% by mass or less, more preferably 45% by mass or less, and more preferably 40% by mass or less. From these viewpoints, the content of the thermosetting resin in the adhesive composition is based on the total amount of the adhesive composition, preferably 25 to 50% by mass.

[0104] The content of the thermosetting resin can also be set according to the relationship with the content of the photopolymerizable compound. If the mass ratio of the content of the thermosetting resin in the adhesive composition to the content of the photopolymerizable compound is 3 to 11, it is easy to obtain high connection reliability, and the amount of fillet generation is also further reduced. From the perspective of further reducing the amount of fillet generation, the above ratio can be 5 or more, 7 or more, or 9 or more. In addition to the above effects, from the perspective of easily obtaining good sealing and easily suppressing the generation of voids, it can be 10 or less.

[0105] [Thermosetting agent]

[0106] As a thermosetting agent, a known curing agent known as a curing agent for a thermosetting resin can be used. The thermosetting agent also includes materials known as a curing accelerator. When epoxy resin is used as a thermosetting resin, as a thermosetting agent, for example, a phenolic resin curing agent, anhydride curing agent, amine curing agent, imidazole curing agent, phosphine curing agent, etc. can be used. Among them, since phenolic resin curing agent, anhydride curing agent, amine curing agent and imidazole curing agent show the flux activity that suppresses the generation of oxide film in the connecting portion, the connection reliability can be improved by using these thermosetting agents. From the viewpoint of being able to cure rapidly when heating is implemented at low temperatures, it is preferred to use an imidazole curing agent.

[0107] Examples of the imidazole curing agent include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazole trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-Undecyl imidazole-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resins and imidazoles. In addition, latent curing agents that microencapsulate them can also be used. They can be used alone or in combination of two or more. Among them, from the viewpoint of easily obtaining better sealing properties and easily suppressing the generation of voids, it is preferred to use compounds having triazine rings.

[0108] From the viewpoint of improving the curability during heating, the content of the thermosetting agent in the adhesive composition is preferably 1 part by mass or more, more preferably 2 parts by mass or more, and further preferably 3 parts by mass or more relative to 100 parts by mass of the thermosetting resin. From the viewpoint of making it more difficult for the adhesive composition to intervene between the connecting parts, the content of the thermosetting agent in the adhesive composition is preferably 10 parts by mass or less, more preferably 7 parts by mass or less, and further preferably 5 parts by mass or less relative to 100 parts by mass of the thermosetting resin. From these viewpoints, the content of the thermosetting agent in the adhesive composition is preferably 1 to 10 parts by mass relative to 100 parts by mass of the thermosetting resin.

[0109] [Other ingredients]

[0110] As components other than the above in the adhesive composition, for example, thermoplastic resins, fillers (fillers), etc. can be mentioned.

[0111] Thermoplastic resins contribute to improving heat resistance and improving film formation. As thermoplastic resins, for example, phenoxy resins, polyimide resins, polyamide resins, polycarbodiimide resins, cyanate resins, acrylic resins, polyester resins, polyethylene resins, polyethersulfone resins, polyetherimide resins, polyvinyl acetal resins, carbamate resins and acrylate rubbers can be cited. Among them, from the viewpoint of easily obtaining excellent heat resistance and film formation, preferably phenoxy resins, polyimide resins, acrylate rubbers, cyanate resins and polycarbodiimide resins, more preferably phenoxy resins, polyimide resins and acrylate rubbers. These thermoplastic resins can also be used alone or as a mixture or copolymer of more than two kinds to use.

[0112] The weight average molecular weight of the thermoplastic resin is, for example, 10,000 or more, or 20,000 or more or 30,000 or more. According to this thermoplastic resin, the heat resistance and film forming property of the adhesive composition can be further improved. From the viewpoint of easily obtaining the effect of improving heat resistance, the weight average molecular weight of the thermoplastic resin can be 1,000,000 or less, or 500,000 or less. From these viewpoints, the weight average molecular weight of the thermoplastic resin can be, for example, 10,000 to 1,000,000. In addition, in this specification, the weight average molecular weight represents the weight average molecular weight measured in terms of polystyrene using a high performance liquid chromatograph (manufactured by SHIMADZU CORPORATION, product name: C-R4A). When measuring, for example, the following conditions can be used.

[0113] Detector: LV4000 UV Detector (manufactured by Hitachi, Ltd., product name)

[0114] Pump: L6000 Pump (manufactured by Hitachi, Ltd., product name)

[0115] Column: Gelpack GL-S300MDT-5 (2 pieces in total) (manufactured by Hitachi Chemical Company, Ltd., product name)

[0116] Eluent: THF / DMF=1 / 1 (volume ratio)+LiBr(0.03mol / L)+H3PO4(0.06mol / L)

[0117] Flow rate: 1mL / min

[0118] From the viewpoint of excellent adhesion of the adhesive film to the connection component (e.g., semiconductor chip), the glass transition temperature (Tg) of the thermoplastic resin is preferably 120° C. or less, more preferably 100° C. or less, and further preferably 85° C. or less. The above Tg refers to the Tg measured using DSC (manufactured by PerkinElmer, product name: DSC-7 model) under the conditions of a sample amount of 10 mg, a heating rate of 10° C. / min, and a measurement atmosphere of air.

[0119] From the viewpoint of easily improving the heat resistance and film formation of the adhesive composition, the content of the thermoplastic resin in the adhesive composition is based on the total amount of the adhesive composition, preferably 5% by mass or more, more preferably 7% by mass or more, and more preferably 10% by mass or more. From the viewpoint of easily suppressing the generation of fillets, the content of the thermoplastic resin in the adhesive composition is based on the total amount of the adhesive composition, preferably 30% by mass or less, more preferably 25% by mass or less, and more preferably 20% by mass or less. From these viewpoints, the content of the thermoplastic resin in the adhesive composition is based on the total amount of the adhesive composition, preferably 5 to 30% by mass.

[0120] Fillers are effective in controlling the viscosity of the adhesive composition, the physical properties of the cured product of the adhesive composition, etc. Specifically, by using fillers, it is possible to achieve the suppression of voids during connection, the reduction of the moisture absorption rate of the cured product of the adhesive composition, etc. The filler can be an inorganic filler (inorganic particles) or an organic filler (organic particles). As inorganic fillers, insulating inorganic fillers such as glass, silica, alumina, titanium oxide, mica, and boron nitride can be cited. Among them, it is preferred to use at least one selected from the group consisting of silica, alumina, titanium oxide and boron nitride, and it is more preferred to use at least one selected from the group consisting of silica, alumina and boron nitride. As an organic filler, for example, a resin filler (resin particles) can be cited. As a resin filler, polyurethane, polyimide, etc. can be cited. According to the resin filler, flexibility at high temperatures such as 260°C can be imparted. In addition, organic fillers composed of thermoplastic resins do not belong to the above-mentioned thermoplastic resins.

[0121] From the viewpoint of better insulation reliability, the filler preferably has insulating properties. The adhesive composition preferably does not contain a filler (conductive filler) composed of a conductive material such as silver, solder, or carbon black.

[0122] The physical properties of the filler can be appropriately adjusted by surface treatment. From the viewpoint of improving dispersibility or adhesion, the filler can be a filler that has been subjected to surface treatment. As the surface treatment agent, glycidol (epoxy), amines, benzene, aniline, (meth) acrylic acid, vinyl compounds, etc. can be cited.

[0123] The average particle size of the filler is, for example, 0.5 to 1.5 μm. From the viewpoint of preventing biting during flip chip connection, the average particle size of the filler is preferably 1.5 μm or less, and from the viewpoint of excellent visibility (transparency), it is more preferably 1.0 μm or less. In addition, the average particle size of the filler is the particle size corresponding to the point of 50% volume when the cumulative frequency distribution curve based on the particle size is obtained with the total volume of the particles as 100%, and can be measured by a particle size distribution measuring device using a laser diffraction scattering method, etc.

[0124] From the viewpoint of suppressing the reduction of heat dissipation and easily suppressing the generation of voids and the increase of moisture absorption rate, the content of filler in the adhesive composition is preferably 25% by mass or more, more preferably 30% by mass or more, and further preferably 35% by mass or more, based on the total amount of the adhesive composition. From the viewpoint of suppressing the occurrence of filler biting (trapping: sinking) into the connecting portion, the content of filler in the adhesive composition is preferably 60% by mass or less, more preferably 55% by mass or less, and further preferably 50% by mass or less, based on the total amount of the adhesive composition. From these viewpoints, the content of filler in the adhesive composition is preferably 25 to 60% by mass relative to the total amount of the adhesive composition.

[0125] When the filler includes an inorganic filler and an organic filler, the content of the inorganic filler can be 60% by mass or more, 70% by mass or more, or 80% by mass or more, based on the total amount of the filler in the adhesive composition, or it can be 98% by mass or less, 95% by mass or less, or 90% by mass or less, or it can be 60-98% by mass, 70-95% by mass, or 80-90% by mass.

[0126] In the adhesive composition, additives such as antioxidants, silane coupling agents, titanium coupling agents, leveling agents, and ion traps may be further contained. They can be used alone or in combination of two or more. As for their content, as long as it is appropriately adjusted to show the effect of each additive. The adhesive composition may include a flux, but the content of the flux is based on the total amount of the adhesive composition, preferably less than 0.5% by mass, more preferably less than 0.01% by mass, and more preferably 0% by mass. In particular, in the case where the adhesive composition has free radical polymerization (free radical curing), since the curing of the adhesive composition is easily hindered by the flux, the adhesive composition preferably does not include a flux. In addition, the flux is a compound with flux activity, for example, a compound (single or polycarboxylic acid) with a carboxyl group. As described above, the imidazole curing agent may also have flux activity, but the compound belonging to the imidazole curing agent does not belong to the above-mentioned flux. Specific examples of the flux include dicarboxylic acids such as succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, and dodecanedioic acid, and compounds in which the second position of these dicarboxylic acids is substituted with an electron-donating group (e.g., 2-methylglutaric acid).

[0127] The adhesive film described above can be produced, for example, by the following method. First, the components constituting the adhesive film (photopolymerizable compound, photopolymerization initiator, thermosetting resin, thermosetting agent, filler, thermoplastic resin, additive, etc.) are added to an organic solvent, and the components are dissolved or dispersed by stirring, mixing, kneading, etc. to prepare a coating liquid containing an adhesive composition. Afterwards, a blade coater, a roller coater, an applicator, etc. are used to apply the above-mentioned coating liquid on a substrate (film or tape) on which a demolding treatment has been applied on at least one side to form a coating film. Next, the organic solvent is reduced from the coating film by heating. Thus, an adhesive film can be formed on the substrate.

[0128] As the organic solvent used in the preparation of the coating liquid, it is preferred to have an organic solvent that can uniformly dissolve or disperse the characteristics of each component, for example, dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone and ethyl acetate can be cited. These organic solvents can be used alone or in combination of two or more. Stirring and mixing when preparing the coating liquid can be carried out using, for example, a stirrer, a crushing machine, a three-roll mill, a ball mill, a bead mill or a homogenizing disperser.

[0129] As the substrate, there is no particular limitation as long as it has heat resistance that can withstand the heating conditions when the organic solvent is volatilized, and examples thereof include polyolefin films such as polypropylene film, polymethylpentene film, polyester films such as polyethylene terephthalate film, polyethylene naphthalate film, polyimide film, and polyetherimide film. The substrate is not limited to a single layer composed of these films, and may also be a multilayer film composed of two or more materials. The substrate may be a film having a release treatment applied to the surface.

[0130] The drying conditions for volatilizing the organic solvent from the coating film on the substrate are preferably set to the conditions for fully volatilizing the organic solvent, and specifically, heating is preferably performed at 50 to 200° C. for 0.1 to 90 minutes. As long as there is no influence on the gap or viscosity adjustment after installation, the organic solvent is preferably removed to 1.5% by mass or less relative to the total amount of the adhesive composition.

[0131] <Adhesive tape and adhesive tape with release film>

[0132] Figure 1 This is a schematic cross-sectional view showing an adhesive tape with a release film according to one embodiment. Figure 1 The adhesive tape 5 with a release film shown in the figure comprises a release film 1, an adhesive film 2, and a substrate 3. The substrate 3 is provided on the adhesive film 2 and constitutes an adhesive tape 4 together with the adhesive film 2. Figure 1 , an adhesive tape 5 with a release film according to one embodiment and an adhesive tape 4 according to one embodiment are disclosed. When the adhesive film 2 is viewed, the release film 1 is provided on the side opposite to the substrate 3 .

[0133] The release film 1 may be any film that can be peeled off from the adhesive film 2, and may be, for example, a film having a release treatment applied to the surface. The release film 1 may be a substrate for manufacturing the adhesive film 2. The release film 1 may be, for example, a film containing polyolefins such as polypropylene and polymethylpentene, polyesters such as polyethylene terephthalate and polyethylene naphthalate, polyimide, polyetherimide, and the like. The thickness of the release film 1 is not particularly limited, and may be, for example, 5 to 200 μm.

[0134] The adhesive film 2 is the adhesive film of the above-mentioned embodiment. The thickness of the adhesive film 2 can be appropriately set according to the relationship between the height of the connecting portion in the connecting component attached before the adhesive film 2 is irradiated with light. The height of the above-mentioned connecting portion is set to Y. When the thickness of the adhesive film 2 is set to X, from the viewpoint of the connectivity during crimping and the filling property of the adhesive, the relationship between X and Y preferably satisfies 0.70X≤Y≤1.3X, and more preferably satisfies 0.80X≤Y≤1.2X. From the viewpoint that the cured product of the adhesive composition is not easy to intervene between the connecting portions and the connection reliability is further improved, it is preferred to satisfy Y>X. Specifically, the thickness of the adhesive film 2 can be 2 to 100 μm, or 6 to 100 μm, 8 to 60 μm, or 10 to 40 μm.

[0135] The substrate 3 is, for example, a film or tape capable of supporting the adhesive film 2, preferably a back grinding tape. The back grinding tape is usually configured with a pressure-sensitive adhesive layer on one main surface side, but in this case, the back grinding tape is provided on the adhesive film 2 in such a manner that the surface on the pressure-sensitive adhesive layer side becomes the adhesive film 2 side (for example, the pressure-sensitive adhesive layer is in contact with the adhesive film). The thickness of the substrate 3 (for example, the thickness of the back grinding tape) can be 20 to 300 μm.

[0136] When the above-mentioned substrate used for manufacturing the adhesive film 2 is used as the substrate 3 of the adhesive tape 4, the laminate of the substrate and the adhesive film obtained by the above-mentioned adhesive film manufacturing method, that is, the method of applying the coating liquid on the substrate to form a coating film and drying it, can be directly used as the adhesive tape 4. In addition, the adhesive tape 4 can be obtained by attaching the substrate 3 to the adhesive film 2 (for example, laminating the adhesive film 2 and the substrate 3). In the case where the substrate 3 is a back grinding tape, if the coating liquid is applied and dried on the pressure-sensitive adhesive layer of the back grinding tape, problems such as damage to the pressure-sensitive adhesive layer and component transfer between pressure-sensitive adhesives may occur, so it is preferred to obtain the adhesive tape 4 by attaching the back grinding tape to the adhesive film 2.

[0137] The adhesive tape 5 with a release film may be obtained by attaching the release film 1 to the adhesive tape 4 (for example, laminating the adhesive tape 4 and the release film 1 ) or by providing the adhesive film 2 on the release film 1 and then providing the substrate 3 on the adhesive film 2 .

[0138] <Semiconductor devices>

[0139] Next, a semiconductor device manufactured using the adhesive film of the above-described embodiment will be described.

[0140] Figure 2 (a) is a schematic cross-sectional view showing one embodiment of a semiconductor device. Figure 2The semiconductor device 100 shown in (a) has: a semiconductor chip 20 and a substrate 30 on which the semiconductor chip is mounted facing each other; wiring (first connection portion and second connection portion) 25 respectively arranged on the facing surfaces of the semiconductor chip 20 and the substrate 30; a connection bump 40 connecting the semiconductor chip 20 and the wiring 25 of the substrate 30; and a sealing portion 50 formed by a cured product of an adhesive composition (adhesive composition constituting the adhesive film of the above embodiment) filling the gap between the semiconductor chip 20 and the substrate 30. The semiconductor chip 20 and the substrate 30 are flip-chip connected through the wiring 25 and the connection bump 40. The wiring 25 and the connection bump 40 are sealed and isolated from the external environment by the cured product of the adhesive composition.

[0141] Figure 2 (b) is a schematic cross-sectional view showing another embodiment of a semiconductor device. Figure 2 The semiconductor device 200 shown in (b) has: a semiconductor chip 20 and a substrate 30 facing each other; bumps (first connection portion and second connection portion) 42 respectively arranged on the facing surfaces of the semiconductor chip 20 and the substrate 30; and a sealing portion 50 composed of a cured product of an adhesive composition (adhesive composition constituting the adhesive film of the above embodiment) filling the gap between the semiconductor chip 20 and the substrate 30. The semiconductor chip 20 and the substrate 30 are connected to each other by flip-chip connection through the facing bumps 42. The bumps 42 are sealed and isolated from the external environment by the cured product of the adhesive composition.

[0142] The semiconductor chip 20 is not particularly limited, and a semiconductor chip made of an element semiconductor such as silicon or germanium, or a semiconductor chip made of a compound semiconductor such as gallium arsenide or indium phosphide can be used.

[0143] The base 30 is not limited as long as it is used as a base for mounting the semiconductor chip 20 , and examples thereof include a semiconductor chip, a semiconductor wafer, a wiring circuit board, and the like.

[0144] Examples of semiconductor chips that can be used as the base 30 are the same as the examples of the semiconductor chip 20 described above, and as the base 30 , the same semiconductor chip as the semiconductor chip 20 can be used.

[0145] The semiconductor wafer that can be used as the base 30 is not particularly limited, and may have a structure in which a plurality of semiconductor chips such as those exemplified in the above-mentioned semiconductor chip 20 are connected.

[0146] There are no particular restrictions on the wiring circuit substrate that can be used as the base 30. It can be used on the surface of an insulating substrate with glass epoxy resin, polyimide, polyester, ceramic, epoxy resin, bismaleimide triazine, etc. as the main components, and has a circuit substrate with wiring (wiring pattern) 25 formed by etching away unnecessary parts of a metal film, a circuit substrate with wiring 25 formed on the surface of the above-mentioned insulating substrate by metal plating, etc., a circuit substrate with wiring 25 formed by printing a conductive material on the surface of the above-mentioned insulating substrate, etc.

[0147] The connecting parts such as wiring 25 and bump 42 contain gold, silver, copper, solder (main components such as tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.), nickel, tin, lead, etc. as main components, and may contain multiple metals.

[0148] Among the above metals, from the viewpoint of producing a package with excellent electrical conductivity / thermal conductivity of the connection portion, gold, silver and copper are preferred, and silver and copper are more preferred. From the viewpoint of producing a package with reduced cost, inexpensive materials, namely silver, copper and solder are preferred, copper and solder are more preferred, and solder is further preferred. If an oxide film is formed on the surface of the metal at room temperature, productivity may decrease and cost may increase. Therefore, from the viewpoint of suppressing the formation of an oxide film, gold, silver, copper and solder are preferred, gold, silver and solder are more preferred, and gold and silver are further preferred.

[0149] A metal layer with gold, silver, copper, solder (mainly composed of tin-silver, tin-lead, tin-bismuth, tin-copper, etc.), tin, nickel, etc. as main components can be formed on the surface of the wiring 25 and the bump 42 by plating, for example. The metal layer can be composed of only a single component or a plurality of components. In addition, the metal layer can be a single layer or a plurality of metal layers stacked.

[0150] The semiconductor device may stack a plurality of structures (packages) such as the semiconductor device 100 and the semiconductor device 200 of the above embodiment. In this case, the semiconductor device 100 and the semiconductor device 200 may be electrically connected to each other through bumps, wiring, etc. containing gold, silver, copper, solder (main components such as tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.), tin, nickel, etc.

[0151] As a method of stacking a plurality of semiconductor devices, for example, TSV (Through-Silicon Via) technology can be cited. Figure 3 An example of a semiconductor device stacked using TSV technology is shown in FIG. Figure 3In the semiconductor device 500 shown in FIG, the wiring 25 formed on the interposer 60 is connected to the wiring 25 of the semiconductor chip 20 via the connecting bump 40, thereby the semiconductor chip 20 and the interposer 60 are connected by flip chip. The gap between the semiconductor chip 20 and the interposer 60 is filled with a cured product of the adhesive composition to form a sealing portion 50. On the surface of the semiconductor chip 20 on the opposite side of the interposer 60, the semiconductor chip 20 is repeatedly stacked via the wiring 25, the connecting bump 40 and the sealing portion 50. The wiring 25 on the pattern surface of the front and back of the semiconductor chip 20 is connected to each other by the through electrode 44 filled in the hole that penetrates the inside of the semiconductor chip 20. In addition, as the material of the through electrode 44, copper, aluminum, etc. can be used.

[0152] This TSV technology can also obtain signals from the back side of a semiconductor chip that is not usually used. In addition, since the through electrode 44 vertically penetrates the semiconductor chip 20, the distance between the opposing semiconductor chips 20 and between the semiconductor chip 20 and the interposer 60 can be shortened, and flexible connection can be achieved. The adhesive film of the above embodiment can be used as a semiconductor adhesive film between the opposing semiconductor chips 20 and between the semiconductor chip 20 and the interposer 60 in this TSV technology.

[0153] Furthermore, in a bump forming method with a high degree of freedom such as the area bump chip technology, a semiconductor chip can be directly mounted on a motherboard without passing through an interposer. The adhesive film of the above embodiment can also be applied to a case where such a semiconductor chip is directly mounted on a motherboard. In addition, the adhesive film of the above embodiment can also be applied to a case where two wiring circuit substrates are stacked to seal a gap (void) between the substrates.

[0154] <Method for manufacturing semiconductor device>

[0155] Next, a method for manufacturing a semiconductor device using the adhesive film of the above-described embodiment will be described.

[0156] A method for manufacturing a semiconductor device according to one embodiment includes, for example, a light irradiation step of irradiating light onto an adhesive film; and a heat bonding step of heating and bonding a semiconductor chip and a substrate on which the semiconductor chip is mounted in a state where the semiconductor chip and the substrate are arranged in a manner such that the connection portion faces each other via the light-irradiated adhesive film. The light irradiation step is performed in a state where the adhesive film is attached to the connection surface of the semiconductor chip or its precursor or the connection surface of the substrate or its precursor. The precursor of the semiconductor chip refers to a component that becomes a semiconductor chip through processing. A specific example of the precursor of the semiconductor chip is a semiconductor wafer. The same is true for the precursor of the substrate.

[0157] Hereinafter, a method for manufacturing a semiconductor device will be described by taking a method in which a semiconductor wafer is used as a precursor of a semiconductor chip as an example. In the following description, a connection surface refers to a surface provided with a connection portion (wiring, bump, etc.) connected in a heat bonding step.

[0158] Figures 4 to 10 The following are cross-sectional views schematically showing the steps of one embodiment of a method for manufacturing a semiconductor device. The manufacturing method of one embodiment includes the following steps (a) to (e).

[0159] Step (a): a lamination step of preparing an adhesive tape 4 and attaching the adhesive tape 4 to the connection surface of the semiconductor wafer A from the adhesive film 2 side (see Figure 4 ). The adhesive tape 4 comprises an adhesive film 2 and a substrate 3 (back grinding tape).

[0160] Step (b): Back grinding step of grinding the semiconductor wafer A of the laminate 7 obtained in step (a) from the side opposite to the adhesive tape 4 (see Figure 5 . )

[0161] Step (c): a step of removing the substrate 3 from the laminate 7 (see Figure 6 . )

[0162] Step (d): a light irradiation step of irradiating the adhesive film 2 with light (refer to Figure 7 . )

[0163] Step (e): a step of separating the laminate 10 into individual pieces to obtain semiconductor chips 10' with adhesive films (see Figure 8 ). The laminate 10 comprises the photocured adhesive film 9 obtained in step d.

[0164] Step (f): Pick up the semiconductor chip 10' with the adhesive film (refer to Fig. 9 . )

[0165] Step (g): a step of placing the semiconductor chip 10' with an adhesive film on the connection surface of the substrate 11 and heating the semiconductor chip 10' with an adhesive film to electrically connect the connection portion 6 of the semiconductor chip 10' with an adhesive film and the connection portion 12 of the substrate 11 (see Fig.10 . )

[0166] (Step (a))

[0167] In step (a), for example, first, an adhesive tape 4 having a back grinding tape as a substrate 3 and a semiconductor wafer A having a connection portion 6 (first connection portion) on one surface are prepared, and the adhesive tape 4 is arranged in a predetermined device (reference) in such a manner that the surface of the adhesive tape 4 on the adhesive film 2 side faces the connection surface of the semiconductor wafer A (the surface provided with the connection portion 6). Figure 4 (a). Then, an adhesive tape 4 is attached to the connection surface of the semiconductor wafer A to obtain a laminated body 7 in which the semiconductor wafer A, the adhesive film 2 and the substrate 3 (back grinding tape) are laminated in this order (refer to Figure 4 (b). ).

[0168] The adhesive tape 4 can be attached by heat pressing, roll lamination, vacuum lamination, etc. The supply area and thickness of the adhesive tape 4 are appropriately set according to the size of the semiconductor wafer and the substrate, the height of the connection part, etc. Figure 4 In the embodiment, the thickness of the adhesive film 2 is greater than the height of the connecting portion 6 of the semiconductor wafer A, and the connecting portion 6 is covered by the adhesive film 2 , but the thickness of the adhesive film 2 may be less than the height of the connecting portion 6 .

[0169] (Step (b))

[0170] In step (b), for example, the semiconductor wafer A of the stacked body 7 is ground using a grinder G (see Figure 5 (a) and Figure 5 (b). The thickness of the ground semiconductor wafer A may be, for example, 10 μm to 300 μm. From the viewpoint of miniaturization and thinning of semiconductor devices, the thickness of the semiconductor wafer is preferably 20 μm to 100 μm.

[0171] (Step (c))

[0172] In step (c), for example, the substrate 3 is removed from the laminate 7 by peeling the substrate 3 from the adhesive film 2 (see Figure 6 . ).

[0173] (Step (d))

[0174] In step (d), the adhesive composition in the adhesive film 2 is cured by irradiating the adhesive film 2 with light (see Figure 7 (a) and Figure 7 (b). Thus, a laminate 10 having an adhesive film 9 with low fluidity is obtained. For example, light irradiation is performed by irradiating activating light L from a light source arranged on the side of the adhesive film 2. The activating light can be, for example, light with a wavelength in the range of 150 to 750 nm (for example, ultraviolet light). As the light source, for example, a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a xenon lamp, a metal halide lamp, an LED light source, etc. can be used. The amount of light irradiation can be appropriately adjusted. For example, the accumulated light amount of light with a wavelength of 365 nm can be 100 mJ / cm 2 Above, it can also be 200mJ / cm 2 Above, 300mJ / cm 2The irradiation amount of light, for example, can be 1000 mJ / cm 2 Below, can also be 700mJ / cm 2 Below, 500mJ / cm 2 the following.

[0175] (Step (e))

[0176] In step (e), for example, first, a dicing tape 8 is attached to the semiconductor wafer A side of the stacked body 10, and the stacked body 10 is placed in a predetermined device (see Figure 8 (a). Then, the laminated body 10 is cut into individual pieces by a dicing saw D, thereby obtaining a semiconductor chip 10' with an adhesive film having an adhesive film 9' on the semiconductor chip A' (see Figure 8 (b) A connection portion 6 is provided on the surface of the semiconductor chip A' on the adhesive film 9' side. The adhesive film 9' is formed of a photocured adhesive composition.

[0177] (Process (f))

[0178] In step (f), for example, the semiconductor chips 10' with adhesive film obtained by the above-mentioned dicing are separated from each other by expanding (expanding) the dicing tape 8, and the semiconductor chips 10' with adhesive film pushed up from the dicing tape 8 side by the needle N are picked up by the pickup tool P from the adhesive film 9' side (refer to Fig. 9 The picked-up semiconductor chip 10' with the adhesive film is transferred to a bonding tool and used for bonding in step (g).

[0179] (Step (g))

[0180] In step (g), for example, first, a semiconductor chip mounting substrate 11 having a connection portion 12 (second connection portion) on one surface is prepared, and the semiconductor chip 10' with an adhesive film is aligned with the substrate 11. Next, the semiconductor chip 10' with an adhesive film is arranged on the connection surface (the surface provided with the connection portion 12) of the substrate 11 from the adhesive film 9' side using a bonding tool and heated. As a result, the connection portion 6 of the semiconductor chip 10' with the adhesive film is electrically connected to the connection portion 12 of the substrate 11, and a sealing portion 13 formed by a cured product of the adhesive film 9' is formed between the semiconductor chip A' and the substrate 11, and the connection portion 6 and the connection portion 12 are sealed, thereby obtaining a bonded body of the semiconductor chip 10' with the adhesive film and the substrate 11, namely, a semiconductor device 15 (refer to Fig.10 The substrate 11 is, for example, a semiconductor chip, a semiconductor wafer, or a wiring circuit board.

[0181] When a solder bump is used for one of the connection portion 6 and the connection portion 12 (for example, when the connection portion 6 or the connection portion 12 is a wiring provided with a solder bump), the connection portion 6 and the connection portion 12 are electrically and mechanically connected by soldering.

[0182] The heating of process (g) can be performed while configuring the semiconductor chip, or it can be performed after configuring the semiconductor chip. The heating and configuration of process (g) can be thermal compression bonding. Process (g) may include: a process of temporarily fixing after position alignment (temporary fixing process); a process of melting the bumps (for example, solder bumps) provided on the connection portion by heat treatment to join the semiconductor chip A' and the substrate 11 and seal the connection portion (sealing process). In the stage of temporary fixing, since it is not necessary to form a metal bond, the temporary fixing process can be implemented under low load, short time and low temperature. Therefore, when the temporary fixing process and the sealing process are implemented in process (g), productivity can be improved and degradation of the connection portion can be suppressed.

[0183] The load applied for temporary fixation is appropriately set in consideration of the number of connecting parts (bumps), the absorption of the height deviation of the connecting parts (bumps), the deformation of the connecting parts (bumps), etc. From the perspective of eliminating gaps to facilitate contact with the connecting parts, the larger the load, the better. For example, the load on each connecting part (for example, a bump) is preferably 0.009N to 0.2N.

[0184] The heating in the sealing step can be performed using a device capable of heating to a temperature above the melting point of the metal of the connection portion. The heating temperature is preferably a temperature at which the adhesive film is cured, and more preferably a temperature at which the adhesive film is completely cured. The heating temperature and heating time are appropriately set.

[0185] The heating time in the sealing process varies depending on the type of metal constituting the connection portion, but from the perspective of improving productivity, the shorter the time, the better. When a solder bump is used in the connection portion, the heating time is preferably less than 20 seconds, more preferably less than 10 seconds, and further preferably less than 5 seconds. In the case of copper-copper or copper-gold metal connection, the connection time is preferably less than 60 seconds.

[0186] In the sealing process, a device capable of heating and pressurizing can be used to heat and pressurize. That is, the heating in the sealing process can be heating based on thermal compression. In this case, the load (connection load) is set by considering the size of the connecting component, the number of connecting parts, the deviation of the height, the deformation of the connecting part based on the pressurization, etc. The connection load can be greater than the atmospheric pressure and less than 1MPa, for example. From the viewpoint of suppressing voids and improving connectivity, the larger the load, the more preferred, and from the viewpoint of suppressing fillets, the smaller the load, the more preferred. From these viewpoints, the load is preferably 0.05 to 0.5MPa. The crimping time (connection time) varies depending on the type of metal constituting the connecting part, but from the viewpoint of improving productivity, the shorter the time, the more preferred. In the case where the connecting part is a solder bump, the crimping time is preferably less than 20 seconds, and can be less than 10 seconds or less than 5 seconds. In addition, since the heat of the crimping machine is difficult to transfer to the fillet when direct pressurization is used, it is preferred to use air pressure pressurization from the viewpoint of being easily and effectively transferred to the fillet. From the viewpoint of sealing and suppressing rounding at the same time, it is also preferred that the pressurization during heating be pressurization using gas pressure (pressurization using a pressurized reflow furnace, a pressurized oven, or the like).

[0187] After the semiconductor chip A' and the base 11 are connected, a heating treatment may be performed in an oven or the like to further improve the connection reliability.

[0188] An embodiment of the method for manufacturing a semiconductor device has been described above, but the method for manufacturing a semiconductor device of the present invention is not limited to the above method.

[0189] For example, in another embodiment, a laminated body produced in advance without performing step (a) may be used.

[0190] Furthermore, in another embodiment, a semiconductor wafer whose thickness is adjusted in advance without performing step (b) can be used. In this case, the adhesive film 2 alone or an adhesive tape including the adhesive film 2 and a base material other than the back grinding tape (e.g., a release film) can be used instead of the adhesive tape 4. When no base material is used, step (c) is also unnecessary.

[0191] Furthermore, in another embodiment, step (d) may be performed before step (c). When step (d) is performed before step (c), the substrate 3 may be peeled off before or after the laminate is attached to the dicing tape 8. However, from the viewpoint of suppressing the deviation of the curing state of the film due to the substrate 3 (back grinding tape) blocking the incidence of light on the adhesive film 2 and facilitating further reduction of the fillet amount, it is preferred to perform step (d) after step (c) and before step (e).

[0192] Furthermore, in another embodiment, a semiconductor chip may be used instead of the semiconductor wafer A. In this case, the adhesive film 2 alone or an adhesive tape including the adhesive film 2 and a base material other than the back grinding tape (e.g., a release film) may be used instead of the adhesive tape 4. Furthermore, steps (b) and (e) are not required, and step (c) is also not required when no base material is used.

[0193] Furthermore, a wiring circuit substrate can be used instead of the semiconductor wafer A. In this case, a semiconductor chip is arranged on a connection surface (surface on the connection portion side) of a wiring circuit substrate with an adhesive film, and heating is performed to electrically connect the connection portion of the semiconductor chip and the connection portion of the wiring circuit substrate, thereby replacing step (g). Furthermore, the adhesive film 2 can be used alone or an adhesive tape including the adhesive film 2 and a substrate other than the back grinding tape (for example, a release film) can be used instead of the adhesive tape 4. Furthermore, steps (b), (e) and (f) are not required, and step (c) is not required when no substrate is used.

[0194] Example

[0195] Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to the Examples.

[0196] The details of the materials used in the Examples are as follows.

[0197] (Phenoxy resin)

[0198] ·ZX-1356-2: phenoxy resin, manufactured by Tohto Kasei Co., Ltd., product name, Tg = about 71°C, weight average molecular weight Mw = about 63,000

[0199] (Solid epoxy resin)

[0200] EP1032: A polyfunctional solid epoxy resin containing a trisphenol methane skeleton, manufactured by Mitsubishi Chemical Corporation, product name "jER1032H60", "jER" is a registered trademark (the same applies hereinafter)

[0201] (Liquid Epoxy Resin)

[0202] ·YL983U: Bisphenol F type liquid epoxy, manufactured by Japan Epoxy Resins Co., Ltd., product name

[0203] ·YX7110B80: Flexible epoxy, manufactured by Mitsubishi Chemical Corporation, product name (imidazole curing agent)

[0204] ·2MAOK-PW: 2,4-Diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, manufactured by SHIKOKU CHEMICALS CORPORATION, product name

[0205] (Acrylic acid compound)

[0206] ·A-DPH: Dipentaerythritol polyacrylate, manufactured by Shin-Nakamura Chemical Co., Ltd., product name

[0207] (Photopolymerization Initiator)

[0208] Omnirad 127: 2-Hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]-phenyl}-2-methyl-propane, manufactured by IGM RESINS BV. Product name ("Irgacure" is a registered trademark.

[0209] Same as below)

[0210] (Organic filler)

[0211] EXL-2655: Core-shell organic microparticles, manufactured by Rohm and Haas Company, product name

[0212] (Silica Filler)

[0213] ·KE180G-HLA: Silica filler, manufactured by Admatechs Co., Ltd., product name

[0214] (Flux)

[0215] ·2-Methylglutaric acid: manufactured by Sigma-Aldrich Co. LLC, melting point = about 78°C

[0216] <Example 1 and Comparative Examples 1 and 2>

[0217] (Preparation of Adhesive Film-Forming Coating Liquid)

[0218] Among the components shown in Table 1, components other than the photopolymerization initiator are added to the organic solvent (cyclohexanone) until the NV value ([mass of the coating after drying] / [mass of the coating before drying]×100) becomes 60%, thereby obtaining a mixed solution. At this time, the amount of each component added is set to the amount shown in Table 1 (unit: mass parts). Then, microbeads of Φ1.0 mm and microbeads of Φ2.0 mm are added to the above-mentioned mixed solution, and stirred for 30 minutes by a bead mill (Fritsch Japan Co., Ltd., planetary micro-pulverizer P-7). The amount of microbeads added is the same as the mass of the non-volatile component amount (total amount of components other than the organic solvent) of the mixed solution. After stirring, the microbeads are removed by filtration. Next, when preparing a coating solution for forming an adhesive film B, a photopolymerization initiator in the amount (unit: mass parts) shown in Table 1 is added to the obtained mixture, and stirring and mixing are performed. Thus, a coating liquid (I) for forming an adhesive film A and a coating liquid (II) for forming an adhesive film B were obtained.

[0219] [Table 1]

[0220]

[0221] (Adhesive tape production)

[0222] Adhesive tapes of Example 1, Comparative Example 1, and Reference Example 1 were prepared using the coating liquid (I) and the coating liquid (II) prepared above, respectively.

[0223] Specifically, first, the coating solution (I) prepared above was applied to a release film (manufactured by Teijin Dupont Film Japan Limited, product name "Purex A54") using a small precision coating device (Yasui Seiki Co., Ltd.) so that the film thickness after drying was 12 μm. Then, the coating film was dried (100° C. / 10 min) in a dust-free oven (manufactured by ESPEC) to form an adhesive film A on the release film. Next, a back grinding tape was attached to the adhesive film A to obtain an adhesive tape with a release film of Comparative Example 1, which sequentially had a back grinding tape, an adhesive film A, and a release film.

[0224] Then, the adhesive tape with release film of Example 1 was obtained in the same manner as above except that the coating solution (II) was used instead of the coating solution (I), which included the back grinding tape, the adhesive film B, and the release film in this order.

[0225] In addition, except that the coating conditions were changed to a thickness of 6 μm for the adhesive film after drying, an adhesive film (adhesive film A or adhesive film B) was formed on the release film in the same manner as the manufacturing method of the above two tapes, and a laminated body having a release film and an adhesive film was obtained. Then, the adhesive films of the two laminated bodies obtained were laminated to each other to form an adhesive film (total thickness 12 μm) having a two-layer structure having a layer formed by the adhesive film A and a layer formed by the adhesive film B. At this time, the lamination temperature was set to 50° C. Then, the release film on the side of the adhesive film A (the side opposite to the adhesive film B) was peeled off and replaced with a back grinding tape, thereby obtaining an adhesive tape with a release film of Reference Example 1, which sequentially has a back grinding tape, a two-layer adhesive film and a release film.

[0226] <Evaluation>

[0227] A connection structure (semiconductor device) was prepared by the following procedure using the adhesive tape with release film obtained in Example 1, Comparative Example 1 and Reference Example 1. Then, the connection reliability (initial conductivity), fillet length and sealing performance were evaluated by the following method using the obtained connection structure.

[0228] (Production of connection structure)

[0229] The adhesive tape with release film prepared in Example 1, Comparative Example 1 and Reference Example 1 was cut into a predetermined size (width 9 mm×length 11 mm×thickness 12 μm), and after removing the release film, it was attached to the surface (connection surface) provided with the solder bump of a semiconductor chip with solder bumps (chip size: width 8.0 mm×length 10.0 mm×thickness 0.05 mm, bump height: copper pillar + solder total about 12 μm, number of bumps 1914), thereby obtaining a stacked sample. In Example 1 and Reference Example 1, two stacked samples were prepared.

[0230] The laminated samples obtained by using the adhesive tape with release film of Example 1 and Reference Example 1 were subjected to light irradiation on the adhesive film. At this time, one of the two laminated samples was irradiated with light through the back grinding tape, and the other was irradiated with light on the surface exposed after the back grinding tape was removed. In addition, the light irradiation used a metal halide lamp as a light source, and the irradiation amount of light with a main wavelength of 365nm and an illumination of 70mW was set to 250mJ / cm 2 .

[0231] Next, the above-mentioned stacked sample (for Example 1 and Reference Example 1, the stacked sample after light irradiation) was mounted on the wafer substrate (wafer substrate: thickness 100 μm, copper wiring: thickness 6 μm) from the adhesive film side using a flip-chip mounting device "FCB3" (manufactured by Panasonic Corporation, product name). The mounting was performed under the conditions that the maximum reaching temperature of the crimping head temperature was set to the actual temperature of 260°C, the crimping time was set to 20 seconds, and the crimping pressure was set to 110N. Thus, a connection structure (semiconductor device) in which the wafer substrate and the semiconductor chip with solder bumps were daisy-chained was obtained.

[0232] (Connection reliability)

[0233] The connection reliability (initial conductivity) was evaluated by measuring the connection resistance value in the 40 μm spacing area of ​​the connection structure obtained above using a multimeter (manufactured by ADVANTEST, product name "R6871E"). The case where the connection resistance value is 60.0Ω or more and 85.0Ω or less is set to "A", the case where the connection resistance value is greater than 85.0Ω and less than 100Ω is set to "B", and the case where the connection resistance value is greater than 100Ω, the case where the connection resistance value is less than 60.0Ω, and the case where the resistance value is not displayed due to poor connection are all set to "C". In the case of evaluation B, it is judged that the connection reliability is sufficient, and in the case of evaluation A, it is judged that the connection reliability is good. The results are shown in Table 2.

[0234] (Rounded Corner Amount)

[0235] Using a digital microscope VHX-6000 (manufactured by KEYENCE CORPORATION), the connection structure obtained above was observed from the semiconductor chip side, and the length of the adhesive (rounded corners) overflowing from the four sides around the semiconductor chip was measured. As the length of the rounded corners of each side, the maximum value of the shortest distance from the end of the overflowing adhesive to the semiconductor chip was used. The amount of rounded corners was evaluated by the average value of the length of the rounded corners measured on each of the four sides. If the above average value is less than 400μm, it is judged that the generation of rounded corners is fully suppressed. The results are shown in Table 2. The numerical values ​​in the table represent the average values ​​of the lengths of the above-mentioned rounded corners.

[0236] [Table 2]

[0237]

[0238] In the table, “with BG” indicates that light irradiation was performed in the presence of the back grinding tape, and “without BG” indicates that light irradiation was performed after the back grinding tape was removed.

[0239] Explanation of symbols

[0240] 1-peeling film, 2-adhesive film, 3-base material, 4-adhesive tape, 5-adhesive tape with peeling film, 6-connecting part (first connecting part), 7, 10-laminated body, 9-photocured adhesive film, 10'-semiconductor chip with adhesive film, 11-base, 12-connecting part (second connecting part), 13-sealing part, 15-semiconductor device, 20-semiconductor chip, 25-wiring (first connecting part and second connecting part), 30-base, 40-connecting bump, 42-bump (first connecting part and second connecting part), 44-through electrode, 50-sealing part, 60-interposer, 100, 200, 300-semiconductor device, A-semiconductor wafer, A'-semiconductor chip.

Claims

1. An adhesive film for bonding a semiconductor chip to a substrate and sealing a gap between the semiconductor chip and the substrate, wherein: The adhesive film is a single-layer film formed of an adhesive composition having photocurability and thermocurability.

2. The adhesive film according to claim 1, wherein The adhesive composition contains a photopolymerizable compound, a photopolymerization initiator, a thermosetting resin and a thermosetting agent.

3. The adhesive film according to claim 2, wherein: The photopolymerizable compound is a radical polymerizable compound, and the photopolymerization initiator is a photoradical polymerization initiator.

4. The adhesive film according to claim 3, wherein: The radical polymerizable compound includes a (meth)acrylic acid compound.

5. The adhesive film according to any one of claims 2 to 4, wherein The thermosetting resin includes an epoxy resin.

6. The adhesive film according to claim 5, wherein: The thermal curing agent includes an imidazole curing agent.

7. The adhesive film according to claim 6, wherein: The imidazole curing agent has a triazine ring.

8. The adhesive film according to any one of claims 2 to 7, wherein: The mass ratio of the content of the thermosetting resin to the content of the photopolymerizable compound in the adhesive composition is 3 to 11.

9. An adhesive tape comprising: The adhesive film according to any one of claims 1 to 8; and A back grinding tape is disposed on the adhesive film.

10. An adhesive tape with a release film, comprising: The adhesive tape according to claim 9; and The peeling film is disposed on the adhesive tape and is located on the side opposite to the back grinding tape when viewed from the adhesive film.

11. A method for manufacturing a semiconductor device, comprising: a light irradiation step of irradiating light onto the adhesive film according to any one of claims 1 to 8; and The semiconductor chip and the substrate on which the semiconductor chip is mounted are arranged so that the connection portion thereof faces each other via the light-irradiated adhesive film, and then heated and bonded. The light irradiation step is performed in a state where the adhesive film is attached to the connection surface of the semiconductor chip or its precursor or the connection surface of the substrate or its precursor.

12. The method for manufacturing a semiconductor device according to claim 11, further comprising: A lamination step of preparing an adhesive tape and attaching the adhesive tape to a connection surface of a precursor of the semiconductor chip or a precursor of the substrate from the adhesive film side, the adhesive tape comprising the adhesive film and a back grinding tape provided on the adhesive film; and A back grinding step of grinding the precursor to which the adhesive tape is attached from a side opposite to the adhesive tape.

13. The method for manufacturing a semiconductor device according to claim 12, wherein: The light irradiation step is performed after the back grinding step and after the back grinding tape is removed.

14. A semiconductor device comprising: a semiconductor chip having a first connection portion; a substrate having a second connection portion electrically connected to the first connection portion; and a sealing portion for bonding the semiconductor chip and the substrate and filling a gap between the semiconductor chip and the substrate. The sealing portion is a cured product of the adhesive film according to any one of claims 1 to 8.

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