Ion implantation simulation method, electronic equipment and storage medium

Abstract

The embodiment of the invention relates to a method for ion implantation simulation, electronic equipment and a storage medium. The method comprises: determining an initial position of each ion in an exposed surface of a simulated semiconductor device; determining first collision data generated by collision between specified reference ions in the ions and material atoms of the semiconductor device in the implantation process; determining second collision data of each other ion based on comparison of surrounding material information of the other ions in each ion and surrounding material information of the reference ion; and determining the distribution condition of each ion in the simulated semiconductor material based on the first collision data and the second collision data. According to the technical scheme, the calculation amount in the simulation ion implantation process can be effectively reduced, the calculation time is remarkably shortened, and the simulation efficiency is improved.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to semiconductor devices, and more particularly, to methods, electronic devices, and storage media for ion implantation simulation. Background Art

[0002] Computer-aided design (TCAD) for semiconductor processes is a key technology that can accurately predict the actual process flow by simulating physical processes such as ion implantation, diffusion, and oxidation. In this process, ion implantation simulation is a core link, which uses the Monte Carlo method to simulate the collision process between ions and material atoms, so as to accurately predict the doping distribution formed after ion implantation.

[0003] At present, ion implantation simulation based on Monte Carlo algorithm still faces significant computational bottlenecks. Specifically, when simulating the distribution of a large number of ions in semiconductor materials, the collision process of each incident ion needs to be calculated independently. This highly complex calculation not only consumes a lot of time, but also occupies too much computer memory resources. Therefore, it is urgent to develop more efficient simulation methods. Summary of the invention

[0004] According to an example embodiment of the present disclosure, a scheme for ion implantation simulation is provided to at least partially overcome the above or other potential drawbacks.

[0005] According to one aspect of the present disclosure, a method for ion implantation simulation is provided. The method includes: determining the initial position of each ion in the exposed surface of the simulated semiconductor device; determining first collision data generated by the collision of a specified reference ion among the ions with the material atoms of the semiconductor device during the implantation process; determining second collision data of each other ion based on the comparison of the surrounding material information of other ions among the ions with the surrounding material information of the reference ion; and determining the distribution status of each ion in the simulated semiconductor based on the first collision data and the second collision data.

[0006] In a second aspect of the present disclosure, an electronic device is provided. The electronic device includes a processor; and a memory coupled to the processor, the memory having instructions stored therein, and when the instructions are executed by the processor, the device performs an action, the action including: determining the initial position of each ion in the exposed surface of the simulated semiconductor device; determining first collision data generated by the collision of a specified reference ion among the ions with the material atoms of the semiconductor device during the implantation process; determining second collision data of each other ion based on the comparison of the surrounding material information of other ions among the ions with the surrounding material information of the reference ion; and determining the distribution status of each ion in the simulated semiconductor based on the first collision data and the second collision data.

[0007] In some embodiments, the simulated semiconductor device is divided into a plurality of three-dimensional regions including exposed surfaces according to predetermined rules, each region including regions with the same material, similar structure or the same structure, wherein the second collision data of other ions is determined based on the comparison of the surrounding material information of other ions in each ion with the surrounding material information of the reference ion, including: based on the similarity between other regions where other ions are located in each region and the reference region where the reference ion is located and the similarity between the ranges of the collision trajectories of the reference ion and the other ions, the first collision position of the reference ion in the reference region after the collision is moved, rotated or mirror-symmetric to generate a transformed collision position; and the transformed collision position is copied to the corresponding other regions as the collision position of the corresponding other ions.

[0008] In some embodiments, during the entire ion injection process, the collision trajectory of the reference ion is confined to a predetermined area that at least includes the reference area, and the second collision data of the other ions is determined based on the comparison of the surrounding material information of the other ions in each ion with the surrounding material information of the reference ion, including: in response to determining that the other area where the other ions are located has a corresponding area with the reference area, the first collision positions of the various ions in the reference area are translated and copied to the corresponding area as the second collision positions of the corresponding other ions; in response to determining that the other area where the other ions are located has a corresponding area with the reference area but has a different initial position, based on the difference between the initial positions of the reference area and the other area, the first collision positions of the ions in the reference area are correspondingly moved and copied to the corresponding area as the second collision positions of the corresponding other ions; or in response to determining that the other area where the other ions are located has a mirror-symmetrical structure with the reference area, the first collision position is mirror-symmetrically copied to the corresponding area as the second collision position of the corresponding other ions.

[0009] In some embodiments, the collision trajectory of the reference ion is limited to a predetermined area based on the position of each ion and the corresponding boundary information of each area.

[0010] In some embodiments, each region also includes an additional region whose structure is different from and different from the reference region. For the additional region, the method also includes: determining a first state of the reference ion before each collision, the first state being related to the position, energy, velocity and surrounding atomic information of the reference ion; determining the trajectory of the reference ion after each collision; and determining the trajectory data of the additional ion after the collision based on a comparison of the state of the additional ion in the additional region before each collision with the reference ion.

[0011] In some embodiments, determining the trajectory data of the additional ions after the collision based on the comparison of the states of the additional ions in the additional region before each collision with the reference ions includes: in response to determining that the state of the additional ions before the collision is consistent with the first state of the reference ions before the corresponding collision, copying the corresponding trajectory data of the reference ions after the collision to the additional ions as the trajectory data of the additional ions after the collision; in response to determining that the state of the additional ions before the collision is inconsistent with the first state of the reference ions before the corresponding collision, performing calculations based on the states of the additional ions before the collision to determine the trajectory data of the additional ions after the collision; or in response to determining that before the corresponding collision, except for the geometric transformation of the direction and position of the velocity relative to the direction and position of the velocity of the reference ions, the state of the additional ions is consistent with the state of the reference ions, performing corresponding geometric transformation on the trajectory data of the reference ions as the trajectory data of the additional ions.

[0012] In some embodiments, determining the second collision data of other ions based on comparison of surrounding material information of other ions in each ion with surrounding material information of the reference ion includes: determining a first state of the reference ion before each collision, the first state being related to the position, energy, velocity and surrounding atomic information of the reference ion; determining the trajectory of the reference ion after each collision; and determining the trajectory data of other ions after collision based on comparison of the state of other ions before each collision with the reference ion.

[0013] In some embodiments, determining the trajectory data of other ions after collision based on comparison of the states of other ions with the reference ion before each collision includes: in response to determining that the states of other ions before collision are consistent with the first state of the reference ion before the corresponding collision, copying the corresponding trajectory data of the reference ion after collision to other ions as the trajectory data of other ions after collision; in response to determining that the states of other ions before collision are inconsistent with the first state of the reference ion before the corresponding collision, performing calculations based on the states of other ions before collision to determine the trajectory data of other ions after collision; or in response to determining that before the corresponding collision, except for the geometric transformation of the direction and position of the velocity relative to the direction and position of the velocity of the reference ion, the states of other ions are consistent with the states of the reference ions, performing corresponding geometric transformation on the trajectory data of the reference ions and using them as the trajectory data of other ions.

[0014] In some embodiments, the state of other ions before collision is inconsistent with the first state of the reference ion before the corresponding collision, including at least one of the following differences: the energy at the collision point of other ions is different from the energy at the corresponding collision point of the reference ion; the speed at the collision point of other ions is different from the speed at the corresponding collision point of the reference ion; and the surrounding atomic information at the collision point of other ions is different from the surrounding atomic information at the corresponding collision point of the reference ion.

[0015] In some embodiments, the exposed surface is evenly divided into a plurality of regions, and wherein determining the initial positions of the respective ions in the exposed surface of the simulated semiconductor device comprises: generating the initial positions of the same number of ions in each region of the exposed surface respectively by a Monte Carlo algorithm.

[0016] In a third aspect of the present disclosure, a computer-readable storage medium is provided, on which a computer program is stored, and when the program is executed by a processor, the method according to the first aspect of the present disclosure is implemented.

[0017] It will be understood from the following description that the technical solution disclosed in the present invention can greatly reduce the amount of calculation in the process of simulating ion implantation, greatly increase the scale of simulated ion implantation and reduce collision calculation time, and significantly improve simulation efficiency.

[0018] This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the disclosure, nor is it intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram showing an example environment in which embodiments of the present disclosure can be implemented; Figure 2 A schematic structural diagram of a simple 3D semiconductor device according to some embodiments of the present disclosure is shown; Figure 3 A schematic structural diagram of a simple 2D semiconductor device according to some embodiments of the present disclosure is shown; Figure 4 A schematic diagram showing the structure of a complex 3D semiconductor device according to some embodiments of the present disclosure is shown; Figure 5 Shown according to Figure 4 Schematic diagram of the structure of a complex 2D semiconductor device obtained from a 3D semiconductor device; Figure 6 Shows Figure 5 A schematic diagram of an exposed surface of a complex 2D semiconductor device is shown; Figure 7 A flow chart showing a method for ion implantation simulation according to some embodiments of the present disclosure is shown; Figure 8 A schematic diagram of three-dimensional ion implantation according to some embodiments of the present disclosure is shown; Fig. 9 A schematic diagram showing a grid unit of a 3D semiconductor device according to some embodiments of the present disclosure; Fig.10 A schematic diagram showing a grid cell of a simple 2D semiconductor device according to some embodiments of the present disclosure; Fig.11 The present invention shows some embodiments of the present invention. Fig.10 A schematic diagram of a semiconductor device being divided uniformly or non-uniformly; Fig.12 A schematic diagram showing the value range of the initial position of ions according to some embodiments of the present disclosure is shown; Fig.13 A schematic diagram of replicating ion collision results in similar regions according to some embodiments of the present disclosure is shown; Fig.14 A schematic diagram showing that there is no corresponding result for incident ions in a partial area according to some embodiments of the present disclosure; Fig.15 A schematic diagram showing the overall translation of all ions in a specified area to another area according to some embodiments of the present disclosure is shown; Fig.16 A schematic diagram showing data replication in a non-uniformly divided region according to some embodiments of the present disclosure; Fig.17 A schematic diagram showing data replication in a non-uniformly divided area according to other embodiments of the present disclosure is shown; Fig.18 A schematic structural diagram of a semiconductor device for performing regional subdivision according to some embodiments of the present disclosure is shown; Fig.19 A schematic diagram of ion collision trajectory replication according to some embodiments of the present disclosure is shown; and Fig. 20 A block diagram of a computing device capable of implementing various embodiments of the present disclosure is shown.

[0020] In the various drawings, the same or corresponding reference numerals represent the same or corresponding parts. DETAILED DESCRIPTION

[0021] The principles of the present disclosure will be described below with reference to the various exemplary embodiments shown in the accompanying drawings. It should be understood that the description of these embodiments is only to enable those skilled in the art to better understand and further implement the present disclosure, and is not intended to limit the scope of the present disclosure in any way. It should be noted that similar or identical reference numerals may be used in the figures where feasible, and similar or identical reference numerals may represent similar or identical functions. Those skilled in the art will readily recognize from the following description that alternative embodiments of the structures and methods described herein may be adopted without departing from the principles of the present invention described herein.

[0022] As used herein, the term "including" and its variations mean open inclusion, i.e., "including but not limited to". Unless otherwise stated, the term "or" means "and / or". The term "based on" means "based at least in part on". The terms "an example embodiment" and "an embodiment" mean "at least one example embodiment". The term "another embodiment" means "at least one additional embodiment". The terms "first", "second", etc. may refer to different or the same objects.

[0023] Ion implantation is a process step in which charged ions with a certain energy are implanted into semiconductor materials. Its advantage is that the concentration distribution of the doping elements in the material can be controlled repeatedly and with high precision, which is of vital importance to the preparation of advanced semiconductor devices and device miniaturization.

[0024] There are generally two methods for ion implantation simulation: one is the analytical formula method, and the other is the Monte Carlo method. The acceleration scheme of some embodiments of the present disclosure is particularly suitable for ion implantation based on the Monte Carlo method. Simulating the ion implantation process through the Monte Carlo algorithm can predict the distribution of ions in the material and lattice damage, optimize the process parameters of ion implantation, reduce experimental and R&D costs, and provide theoretical guidance for a deep understanding of the physical process of ion implantation.

[0025] In semiconductor device simulation, Monte Carlo simulation of ion implantation is applicable to 1D, 2D and 3D device structures. Depending on the complexity of the device, structures of different dimensions can be used for simulation. Usually, 3D structures have a higher degree of complexity, so the simulation time is longer.

[0026] As mentioned earlier, the current Monte Carlo algorithm for simulating ion implantation has a computational bottleneck. The main reason is that when simulating the distribution of a large number of ions in semiconductor materials, the collision process of each incident ion needs to be calculated independently. This highly complex calculation not only consumes a lot of time, but also occupies too much computer memory resources.

[0027] In view of this, the present disclosure provides an improved solution.

[0028] The embodiments of the present disclosure provide an improved method for ion implantation simulation. The method includes: determining the initial position of each ion in the exposed surface of the simulated semiconductor device; determining the first collision data generated by the collision of a specified reference ion among each ion with the material atoms of the semiconductor device during the implantation process; determining the second collision data of other ions based on the comparison of the surrounding material information of other ions among each ion with the surrounding material information of the reference ion; and determining the distribution of each ion in the simulated semiconductor based on the first collision data and the second collision data. The embodiments of the present disclosure can greatly reduce the amount of calculation in the simulated ion implantation process by replicating the collision data, significantly increase the scale of simulated ion implantation and reduce the collision calculation time, thereby significantly improving the simulation efficiency.

[0029] The following will refer to Figure 1-Figure 20 The embodiments of the present disclosure are described in detail.

[0030] Figure 1 1 is a schematic diagram of an example environment 100 in which embodiments according to the present disclosure can be implemented. Figure 1 As shown, the example environment 100 includes a computing device 110 and a client 120 .

[0031] In some embodiments, the computing device 110 may interact with the client 120. For example, the computing device 110 may receive an input message from the client 120 and output a feedback message to the client 120. In some embodiments, the input message from the client 120 may be data related to the semiconductor device. The computing device 110 may perform corresponding operations on the data related to the semiconductor device and output the corresponding operation results to the client 120.

[0032] In some embodiments, computing device 110 may include, but is not limited to, a personal computer, a server computer, a handheld or laptop device, a mobile device (such as a mobile phone, a personal digital assistant (PDA), a media player, etc.), consumer electronics, a minicomputer, a mainframe computer, cloud computing resources, etc.

[0033] It should be understood that the structure and function of the example environment 100 are described for exemplary purposes only and are not intended to limit the scope of the subject matter described herein. The subject matter described herein can be implemented in different structures and / or functions. The environment is merely illustrative and is not intended to limit the application environment of the embodiments of the present disclosure.

[0034] See also Figure 2 , Figure 2 FIG. 2 shows a schematic diagram of a simple 3D semiconductor device according to some embodiments of the present disclosure. Figure 2 A 2D structure can be obtained by cutting along the cross section 204 shown in FIG.

[0035] See also Figure 3 , Figure 3 A schematic diagram of a simple 2D semiconductor device 302 according to some embodiments of the present disclosure is shown, which may be formed by Figure 2 The cross section 204 shown in FIG. 1 is obtained by taking a cross section of the semiconductor device 202 .

[0036] Figure 4 A schematic structural diagram of a complex 3D semiconductor device 402 according to some embodiments of the present disclosure is shown. Figure 5 Shown according to Figure 4 A schematic diagram of the structure of a complex 2D semiconductor device obtained from a 3D semiconductor device. Specifically, Figure 5 The structure shown is along the Figure 4 The 2D structure is obtained by cutting the device through the AB section in the figure. Figure 4 and Figure 5 The device shown in may be a conventional semiconductor device, and its structure is not described in detail herein.

[0037] Figure 6 Shows Figure 5 Schematic diagram of the exposed surface of the complex 2D semiconductor device shown. Figure 6 It can be seen that the surface pointed by the arrow is the exposed surface of the semiconductor device, and ion implantation is performed on this exposed surface.

[0038] In semiconductor technology, the exposed surface refers to the area of ​​the device surface that is not covered by the mask layer and is directly exposed to the ion beam. Therefore, "exposed surface" is used to represent the surface area where ions need to be implanted. During the simulation process, the device exposed surface is usually the upper surface of the device, such as Figures 4 to 6 shown.

[0039] In order to explain the principle of the present disclosure more clearly, the following will refer to Figure 7 Let's describe it in more detail.

[0040] Figure 7 A flow chart of a method 700 for ion implantation simulation according to some embodiments of the present disclosure is shown.

[0041] At block 702, initial positions of various ions are determined in an exposed surface of a simulated semiconductor device.

[0042] In the process of simulating ion implantation, the initial position of the ions must be determined first. In other words, determining the initial position of the ions during the simulation is to generate the initial position of the ions. The initial position of the ions can be generated in a variety of ways.

[0043] In some embodiments, the initial random position of the incident ion on the exposed surface can be generated by a Monte Carlo algorithm, wherein the random number generation algorithm can adopt the following methods: linear congruential method; Mersenne rotation method; random number generation based on hardware entropy source; or other methods, such as a custom algorithm.

[0044] An important aspect of the Monte Carlo algorithm is to generate the initial random position of the injected ions based on the structure to simulate the possible ion positions in real situations. By simulating the collision process between a large number of ions and material atoms, the final position of the ions in the material is obtained, and the concentration distribution of the ions in the device is obtained.

[0045] In some embodiments, the incident ions are injected into the three-dimensional material along a specified direction, and the exposed surface of the ion injection can be divided into multiple regions, and each region can be numbered. The initial position of the incident ions can be generated in each region by the Monte Carlo algorithm. The exposed surface is divided into multiple regions to make the initial positions random and relatively uniform, so that the randomly generated initial positions can cover each region as much as possible.

[0046] It should be understood that the embodiments of the present disclosure are not limited thereto. In some embodiments, the device may not be partitioned, and the initial positions of the randomly emitted multiple ions are generated on the entire exposed surface.

[0047] Refer to the following Figure 8 Give a description. Figure 8 A schematic diagram of three-dimensional ion implantation according to some embodiments of the present disclosure is shown.

[0048] like Figure 8 As shown, the incident ions are implanted into the three-dimensional material along a specified direction. The exposed surface of the three-dimensional material, that is, the exposed surface for ion implantation, is evenly divided into a plurality of regions, and each region is numbered, as shown in FIG. Figure 8 The numbers shown in the figure are regions 1 to 16. Each region can generate the initial position of the incident ion by a random algorithm, such as a Monte Carlo algorithm. The Monte Carlo algorithm generates specific data based on random numbers. In some embodiments of the present disclosure, these specific data are random initial positions of ions.

[0049] As mentioned above, the purpose of dividing the regions is to make the ion distribution more uniform. After the regions are divided, one or more ions can be emitted in each region to ensure that ions can be emitted in each region, so that the overall uniformity can be maintained. If the regions are not divided, the initial positions of several ions are randomly generated in the entire surface area. As further described below, in some embodiments, the division of regions can be further used to accelerate the simulation process. In other embodiments, the division of regions is not further used to accelerate the simulation process. For these embodiments, the advantage of dividing the regions is only to make the ion distribution generated by the ions more uniform.

[0050] There are many division algorithms for device area division. For example, it can be divided evenly, unevenly, or based on grid cells. Uniform division means dividing the structure evenly along the YZ plane according to the specified distance. Uneven division means dynamically adjusting the division area according to different materials and boundary information. Grid cell division means dividing according to existing grid cells, by merging grid cells, etc. This division is based on the existing grid information of the structure when it is read in, and is usually implemented by the grid engine.

[0051] See also Fig. 9 , Fig. 9 A schematic diagram of a grid cell of a 3D semiconductor device 202 according to some embodiments of the present disclosure is shown, wherein 204 is a cross-section. Fig.10 Schematic diagram of a grid unit of a simple 2D semiconductor device 202 according to some embodiments of the present disclosure is shown. The grid units can be merged as needed to perform area division. For example, Fig.10 The units in the two columns on the left are area 1, the units in the two columns in the middle are area 2, and the units in the column on the right are area 3. It should be understood that this is only an example, and various divisions can be performed as needed.

[0052] Fig.11 The present invention shows some embodiments of the present invention. Fig.10 Schematic diagram of uniform or non-uniform division of semiconductor devices shown. Uniform division does not consider the grid, and is directly divided in the middle (i.e., the middle of the third grid), that is, it is divided by the dotted line 1102, into two left and right areas of the same size. Grid division is always divided at the grid boundary, for example, it is divided by another dotted line 1104, and is also divided into two left and right areas, but the sizes of the two are different.

[0053] See also Fig.12 , Fig.12 A schematic diagram of the range of values ​​of the initial position of ions according to some embodiments of the present disclosure is shown. In the Monte Carlo ion implantation simulation, the initial position of the ion is determined by the (X, Y, Z) coordinates. The starting emission position of all particles is uniformly set to Xmin in the X direction. In the Y and Z directions, the initial coordinates of each ion are generated by random numbers, so that the starting point of each ion is different, thereby more realistically simulating the ion distribution in actual conditions.

[0054] Xmin, Xmax, Ymin, Ymax, Zmin, and Zmax represent the minimum and maximum coordinate values ​​of the device in three orthogonal directions, respectively. These parameters together determine the three-dimensional boundaries of the entire device structure.

[0055] The initial position of the ion is (X, Z, Y) and can be determined by the following formula: X = Xmin; Y = Ymin + (Ymax – Ymin) * RandNumber_Y; Z = Zmin + (Zmax – Zmin) * RandNumber_Z; RandNumber is a random number, and its value range is [0.0, 1.0].

[0056] Back to Figure 7 At block 704, first collision data generated by collisions between designated reference ions among the ions and material atoms of the semiconductor device during an implantation process is determined.

[0057] The first collision data generated by the collision of the reference ions with the material atoms of the semiconductor device during the implantation process may be determined in a variety of ways.

[0058] In some embodiments, the energy, velocity, and position of the incident ion before and after each collision can be automatically recorded during the simulation process. In some embodiments, the energy, velocity, position, and surrounding material atom information of the incident ion before and after each collision can be automatically recorded during the simulation process. These energies, velocities, positions, and surrounding material atom information can all be used as collision state data of the ion. In order to distinguish the collision data of other ions, the collision data of the reference ion are collectively referred to as the first collision data, and the final result of the collision is directly related to the data. In addition, it should be made clear that the energy and velocity of the ion after each collision are the energy and velocity before the next collision, respectively.

[0059] The simulation software can calculate the collision between the incident ions and the atoms of the material. The specific calculation method is not described in detail in this disclosure. The two-body collision approximation or other calculation methods can be used. In addition, the collision position of each ion is recorded. Finally, the distribution of the ions can be determined by counting the ion stop positions. In other words, the doping concentration of the material can be determined by counting the ion stop positions. This will be described in detail later.

[0060] Reference again Figure 8 , the ions in region 1 can be designated as reference ions, and region 1 can be designated as reference region accordingly. See also Fig.13 , the region 1 can be used as the reference region, and the ions therein can be used as the reference ions. Each device is not limited to one reference region, for example, in view of the symmetry of the structures of region 4 and region 5, one of them, for example, region 4 can also be used as the reference region.

[0061] Back to Figure 7 At block 706 , second collision data of other ions are determined based on a comparison of surrounding material information of other ions among the respective ions with surrounding material information of the reference ion.

[0062] The same type of incident ions have the same initial energy, and the velocity direction is determined by the injection angle. Therefore, in some embodiments, the surrounding material information becomes the key information for determining the collision data. Considering the consistency of other initial information, the collision data of other ions can be determined by comparing the surrounding material information with the reference ion.

[0063] In some embodiments, the simulated semiconductor device is divided into a plurality of three-dimensional regions including exposed surfaces according to a predetermined rule, each region including regions with the same material, similar structure or the same structure, wherein the second collision data of other ions is determined based on the comparison of the surrounding material information of other ions in each ion with the surrounding material information of the reference ion, including: based on the similarity between other regions where other ions are located in each region and the reference region where the reference ion is located and the range of the collision trajectory of the reference ion, the first collision position of the reference ion in the reference region after the collision is moved, rotated or mirror-symmetric to generate a transformed collision position; and the transformed collision position is copied to the corresponding other regions as the corresponding collision position of other ions. The range of the collision trajectory refers to the range of the region where the trajectory of the ion after the collision is located, for example, whether the position of the ion is limited to region 1, or exceeds region 1 and enters region 2, or even enters region 3, etc.

[0064] In the divided different regions, the collision process of the incident ions in similar regions is similar, so the acceleration effect can be achieved by copying the ion collision results of the same or similar regions. In some embodiments, during the entire ion injection process, the collision trajectory of the reference ion is limited to a predetermined region that at least includes the reference region, and the second collision data of other ions is determined based on the comparison of the surrounding material information of other ions in each ion with the surrounding material information of the reference ion, including: when it is determined that the other regions where other ions are located have corresponding regions with the reference region, the collision positions of each ion in the reference region are translated and copied to the corresponding region as the corresponding collision positions of other ions; when it is determined that the other regions where other ions are located have corresponding regions with the reference region but have different initial positions, based on the difference between the initial positions of the reference region and the other regions, the collision positions of the ions in the reference region are correspondingly moved and copied to the corresponding region as the corresponding collision positions of other ions; or when it is determined that the other regions where other ions are located have a mirror-symmetric structure with the reference region, the first collision position is mirror-symmetric and copied to the corresponding region as the corresponding collision position of other ions. This is further described below in conjunction with the accompanying drawings.

[0065] In some embodiments, the similarity of different regions can be determined first. If the materials of the two regions are the same and the structures and boundaries are highly similar, this solution can be applied. Specifically, for incident ion 1 that has never left region 1, the data of each collision can be reused. When another region 2 is exactly the same or highly similar to region 1, the collision data of incident ion 1 can be copied to incident ion 2 that collides in region 2. The position data of incident ion 2 only needs to be translated, rotated or symmetric to the original data. It should be understood that region 1 here is only for schematic illustration, and the region 1 mentioned can be, for example, Figure 8 It can be area 1 in the above description, or any other area, or area 2 or even area 3 in addition to area 1. In the above description, it means that one or some reference ions have never left a predetermined area during the entire injection process, and the predetermined area can be area 1, area 2, or a combination of area 1 and area 2, etc. Based on this feature, the collision data of ions with similar areas can be replicated.

[0066] Whether an incident ion has left a predetermined area can be determined in the following way: Each area has boundary information. For area A (Xmin, Xmax, Ymin, Ymax, Zmin, Zmax), the ion position (x, y, z) is located in area A and satisfies Xmin<= x<= Xmax and Ymin<=y<= Ymax and Zmin<= z<= Zmax, where x, y and z represent coordinates in a rectangular coordinate system. Otherwise, it means that the ion has left area A.

[0067] In some embodiments, it can be determined based on the positions of the respective ions and the corresponding boundary information of the respective regions that the collision trajectory of the reference ion is confined to a predetermined region, such as the predetermined region 1 mentioned above.

[0068] In some embodiments, each region also includes an additional region whose structure is different from and not similar to the reference region. For the additional region, since the structure is different from and not similar to the reference region, the collision data of the corresponding reference particle cannot be directly copied. For the additional region, the data after the collision can be determined in the following manner: determining the first state of the reference ion before each collision, the first state is related to the position, energy, speed and surrounding atomic information of the reference ion; determining the trajectory of the reference ion after each collision; determining the trajectory data of the additional ion after the collision based on the comparison of the state of the additional ion in the additional region with the state of the reference ion before each collision.

[0069] In some embodiments, determining the trajectory data of the additional ions after the collision based on the comparison of the states of the additional ions in the additional region with the states of the reference ions before each collision includes: when it is determined that the state of the additional ions before the collision is consistent with the first state of the reference ions before the corresponding collision, copying the corresponding trajectory data of the reference ions after the collision to the additional ions as the trajectory data of the additional ions after the collision; when it is determined that the state of the additional ions before the collision is inconsistent with the first state of the reference ions before the corresponding collision, performing calculations based on the states of the additional ions before the collision to determine the trajectory data of the additional ions after the collision; or when it is determined that before the corresponding collision, except for the geometric transformation of the direction and position of the velocity relative to the direction and position of the velocity of the reference ions, the states of the additional ions are consistent with the states of the reference ions, performing corresponding geometric transformation on the trajectory data of the reference ions and using them as the trajectory data of the additional ions.

[0070] In some embodiments, determining the second collision data of other ions based on comparison of surrounding material information of other ions in each ion with surrounding material information of the reference ion may include: determining a first state of the reference ion before each collision, the first state being related to the position, energy, velocity and surrounding atomic information of the reference ion; determining the trajectory of the reference ion after each collision; and determining trajectory data of other ions after collision based on comparison of the state of other ions before each collision with the reference ion.

[0071] In some embodiments, determining the trajectory data of other ions after collision based on comparison of the states of other ions with the reference ion before each collision includes: when it is determined that the state of other ions before collision is consistent with the first state of the reference ion before the corresponding collision, copying the corresponding trajectory data of the reference ion after collision to other ions as the trajectory data of other ions after collision; when it is determined that the state of other ions before collision is inconsistent with the first state of the reference ion before the corresponding collision, performing calculations based on the state of other ions before collision to determine the trajectory data of other ions after collision; or when it is determined that before the corresponding collision, except for the geometric transformation of the direction and position of the velocity relative to the direction and position of the velocity of the reference ion, the state of other ions is consistent with the state of the reference ion, performing corresponding geometric transformation on the trajectory data of the reference ion and using it as the trajectory data of other ions.

[0072] In some embodiments, the state of other ions before collision is inconsistent with the first state of the reference ion before the corresponding collision, including at least one of the following differences: the energy at the collision point of other ions is different from the energy at the corresponding collision point of the reference ion; the speed at the collision point of other ions is different from the speed at the corresponding collision point of the reference ion; and the surrounding atomic information at the collision point of other ions is different from the surrounding atomic information at the corresponding collision point of the reference ion.

[0073] In some embodiments, the exposed surface is uniformly divided into a plurality of regions, and wherein determining the initial positions of the respective ions in the exposed surface of the simulated semiconductor device may include: generating the initial positions of the same number of ions in each region of the exposed surface by a Monte Carlo algorithm, thereby uniformly generating the initial positions of the respective ions.

[0074] At block 708 , a distribution of the ions in the simulated semiconductor is determined based on the first collision data and the second collision data.

[0075] By determining the final position of each ion, the final distribution of each ion can be obtained, that is, the concentration distribution of the doping element in the material can be obtained.

[0076] The following reference Fig.13 The collision result replication scheme of some embodiments of the present disclosure is described in detail. Fig.13 A schematic diagram of replicating ion collision results in similar regions according to some embodiments of the present disclosure is shown. Fig.13 The left side of the figure shows the various regions, and the right side shows a copy of the collision data. Fig.13 As shown in , the structure is divided into 5 regions, namely, regions 1 to 5, wherein regions 1 and 2 have exactly the same structure (or size), and the difference between region 3 and regions 1 and 2 is that the height is lower than that of regions 1 and 2. In other words, the difference between region 3 and regions 1 and 2 is that region 3 translates the initial position to the lower right. Regions 4 and 5 are mirror-symmetrical. The ions in region 1 can be designated as reference ions, and accordingly, region 1 can be called a reference region. It should be understood that there can be more than one reference region and reference ion in a region. In fact, there can be multiple reference regions and multiple reference ions. For example, region 4 can serve as a reference for region 5.

[0077] Fig.13 In the figure, since the materials and structures of regions 1 and 2 are basically the same, the collision conditions of ions that meet the above conditions in these two regions are basically the same, and the collision position of ions in region 1 can be copied to ions in region 2 by right translation. The only difference between region 3 and region 1 is that region 3 translates the initial position to the lower right, so the collision position of ions can be copied after being translated to the lower right. Regions 4 and 5 have mirror symmetry, so the collision position of ions in region 4 can be copied to ions in region 5 after mirror symmetry.

[0078] In some embodiments, the collision condition may include the position of the incident ion during the collision, the position of the target atom, the collision angle, the collision energy loss, and the collision damage. The collision condition may be calculated using a two-body collision approximation or other calculation methods.

[0079] As mentioned above, in order to distinguish the collision data of other ions, the collision data of the first ion is collectively referred to as the first collision data, and the final result of the collision is directly related to the data.

[0080] In some embodiments, the size of the other regions is smaller than or equal to the size of the reference region, so that the collision data of all reference ions in the reference region or the collision data of the size portion corresponding to the other regions can be copied to the other regions.

[0081] For simple two-dimensional and three-dimensional structures, since the structures themselves have high symmetry and similarity, the solution of the above embodiment can greatly reduce the amount of calculation and obtain accurate results.

[0082] Fig.14 A schematic diagram showing that there is no corresponding result for incident ions in a partial area according to some embodiments of the present disclosure.

[0083] In the divided different regions, the collision process of incident ions in similar regions is similar, so the acceleration effect can be achieved by replicating the ion collision results in similar regions. As mentioned earlier, this scheme will first determine the similarity of different regions. If the materials of the two regions are the same and the structures and boundaries are highly similar, this scheme can be applied.

[0084] If the incident ions leave the reference region and enter the adjacent region during the collision process, and other regions do not have corresponding adjacent regions even if the structures of the other regions are the same or similar to those of the reference region, the solution of the above embodiment cannot be applied.

[0085] like Fig.14 As shown, the incident ions enter region 2 from region 1, but region 2 has no corresponding structure because its adjacent region 3 is different from region 2. Therefore, the collision data of the ions in region 1 cannot be copied to the ions in region 2, that is, the solution of the above embodiment cannot be applied. For this situation, a more detailed acceleration solution can be further adopted, that is, the local ion collision trajectory replication mentioned below. Fig.19 Give a description.

[0086] For the attached Fig.14For example, assume that region 3 has the same structure as region 2, and there is a region 4 behind region 3, and region 4 is the same as region 3 in the current figure, which is equivalent to region 2 having a corresponding structure. In this case, the above-mentioned scheme for copying collision data can be applied to region 2. In other words, if there is no corresponding structure, the direct copy scheme cannot be adopted. If there is a corresponding structure, the direct copy scheme can be adopted. That is, if the ion only moves in region 1, the structure of region 2 is consistent with that of region 1, and the collision result can be copied. If the ion moves from region 1 to region 2, it is necessary to satisfy that region 2 is consistent with region 1, and region 3 is consistent with region 2, that is, region 1, region 2 and region 3 are all consistent before the result can be copied. If region 3 is inconsistent with region 2, that is, the above conditions cannot be met, the collision data cannot be copied.

[0087] In fact, the collision data of different particles in the same area will be different. For example, if there are 10 ions with different initial positions in area 1 (A1, B1, C1, D1...), the last 10 ions will be distributed in different positions in area 1. When copying, all ions in area 1 are actually translated to area 2 as a whole. The copy operation assumes that the initial positions of the 10 ions in area 2 are the same as those in area 1. The Monte Carlo algorithm itself describes the macroscopic results of a large number of ions. When there are many ions, the distribution of ions with similar structures is roughly similar. This ensures the reliability of the copy operation in the embodiment of the present disclosure.

[0088] See also Fig.15 , Fig.15 FIG. 4 is a schematic diagram showing a method of translating all ions in a specified area to another area according to some embodiments of the present disclosure. Fig.15 As shown, two ions are shown, namely ion A and ion B. Since region 2 is completely consistent with region 1, ion A and ion B in region 1 (i.e., the data of ion A and ion B) can be translated as a whole to region 2, as shown in FIG. Fig.15 The trajectories of A' and B' are shown in region 2.

[0089] Fig.16 A schematic diagram of data replication in a non-uniformly divided area according to some embodiments of the present disclosure is shown. Fig.17 A schematic diagram of data replication in non-uniformly divided areas according to some other embodiments of the present disclosure is shown.

[0090] In the case of uniform division, the sizes of different regions are basically the same. Collision data can be copied according to the method of the aforementioned embodiment. However, it is not possible to simply copy different regions. Assume that region 1 is the copied region, and region 2 needs to copy the ion data results in region 1. If region 1 is larger than region 2, then region 2 can copy the corresponding partial results in region 1 (indicated by the dotted line). If region 1 is smaller than region 2, then it cannot be copied. Assume that the large area is global and the small area is local. The essence is that the local data of the global area data can be copied to other similar local areas without causing data loss. The large area can always contain all the data information required by the small area. When the data of the small area is copied to the large area, there is no data in the remaining position of the large area, and it needs to be re-simulated.

[0091] Fig.18 A schematic structural diagram of a semiconductor device with region subdivision according to some embodiments of the present disclosure is shown.

[0092] Because the structural components of semiconductor devices are usually complex, the following figure is used as an example to illustrate. First of all, it should be pointed out that the simulation coordinate system is usually X along the ion implantation depth direction, while Y and Z are parallel to the screen and perpendicular to the screen respectively. The boundaries of silicon dioxide (SiO2) and silicon (Si) in the Y direction and Z direction (not shown in the figure, orthogonal to the X and Y directions) can be used as dividing points, so that large areas can be divided. In order to meet the replication requirements, it can be further subdivided, such as area 1 can be further divided into areas 1-1, 1-2, and area 2 can be further divided into areas 2-1 and 2-2. Then areas 3 and 1-2 can copy the data of 1-1 because they are similar to area 1-1, and area 2-2 can copy the data of area 2-1 because it is similar to area 2-1.

[0093] Fig.19 A schematic diagram of ion collision trajectory replication according to some embodiments of the present disclosure is shown.

[0094] The energy, velocity, position and surrounding material atom information of the incident ion before and after each collision with the lattice atom will be recorded as the collision state data of the ion, and the final result of the collision is directly related to the data. If the energy, velocity and surrounding atomic information of the two incident ions are consistent, and only the position has a geometric transformation, the energy and velocity magnitude after the collision will remain the same, but the velocity direction and position will undergo a corresponding geometric transformation after the collision.

[0095] In some embodiments of the present disclosure, the input parameters specify the ion name, injection energy, injection dose, and injection angle. The same type of incident ions have the same mass, the same initial energy, and the same velocity, and the velocity direction is calculated by the injection angle. In the actual process, there is a divergence angle of the injected ion beam, so the velocity direction is calculated based on the default or specified divergence angle. The examples in the above embodiments are all the same type of ions. The present disclosure supports the simultaneous injection of different types of ions, and data replication will only be performed between the same type of ions.

[0096] Therefore, in this embodiment, if other incident ions have a similar collision state as the incident ion before collision, the position data after the collision, that is, the collision trajectory data, can be directly copied, thereby eliminating the need to construct a physical model and calculate mathematical equations during the collision.

[0097] like Fig.19 As shown, the information of each collision of the incident ion A is recorded, including the first collision state A1, the second collision state A2, the third collision state A3 and the final state A4. From A1 to A4, all collision trajectory information of the incident ion A is included.

[0098] If the incident ion B has similar energy, velocity and surrounding atomic information as A1 when it is at B1, then the trajectory data of A2 can be directly copied. The position data of A2 is translated into the position data of B2, and the energy and velocity of B2 are consistent with A2 after the collision.

[0099] That is, when the state of the other ions before collision is consistent with the first state of the reference ions, the corresponding trajectory data of the reference ions after collision can be copied to the other ions. For example, if the states before the first collision are consistent, the trajectory after the first collision is copied to the other ions.

[0100] Next, we check the surrounding atomic information of B2 and find that it is consistent with A2. Therefore, the collision state of B2 and A2 is the same, and only the position is shifted. The trajectory data of A3 can be copied to B3, and so on.

[0101] For the incident ion C, it can copy the data of A1 and A2 at both C1 and C2, but the surrounding atomic information at C3 is different from that at A3, so the collision process needs to be calculated to obtain the data of C4.

[0102] For the incident ion D, its position and velocity direction at D1 have undergone geometric transformation compared with A1, so corresponding geometric transformation of the position and velocity direction is required during subsequent trajectory replication.

[0103] The solution of this embodiment detects the state data before the ion collision and copies the trajectory data, which can effectively reduce the physical model construction and mathematical equation calculation during the collision and obtain accurate results.

[0104] In this embodiment, during the collision process, each collision determines whether the data of a certain collision can be copied. Once it is not satisfied, the copy is exited and the collision calculation formula is used to calculate until the ion finally stops. Therefore, in this process, if you are lucky, you can copy all the trajectories of the ions, otherwise you can only copy a certain section of the trajectory. In practice, since the initial speed and energy of the injected ions are basically the same, for ions with consistent surrounding atomic information, the energy and speed after the collision remain consistent. Therefore, during the injection process, the surrounding atomic information can be determined only at the collision point (for example, before and after the collision). Different atomic information will result in different collision data.

[0105] Fig.19 The circled numbers 1-4 represent different situations of the collision process. For example, circles 1 and 2 represent collision trajectories with translational symmetry that meet the replication conditions. Circle 3 represents the situation where the first two collisions (C1, C2) can be replicated, but the last two collisions (C3, C4) do not meet the replication conditions (due to different surrounding atomic environments during the collision). Circle 4 represents a collision trajectory with mirror symmetry that meets the replication conditions.

[0106] The collision position and collision trajectory mentioned above have basically the same meaning, except that the collision position focuses on a single position, while the trajectory focuses on representing a series of front and rear collision positions. Interchanging or unifying the above terms in the above description can still correctly express the meaning of the solution of the embodiment of the present application.

[0107] In some embodiments of the present disclosure, the amount of calculation in the simulated ion implantation process can be greatly reduced through "replication of collision results in similar areas" and "replication of ion collision trajectories", and large-scale simulation of 2D and 3D simulation processes can be achieved. While ensuring the accuracy of the calculations, the scale of simulated ion implantation is greatly improved and the collision calculation time is reduced, which plays a key role in improving the efficiency of the simulated ion implantation process.

[0108] Fig.13 The scheme of "similar area collision result replication" shown in Fig.19 Compared with the "ion collision trajectory replication" scheme (referred to as Scheme 2) shown in the figure, it is more efficient in terms of speed. Because this scheme is due to structural consistency, it satisfies the situation of Scheme 1 and can directly replicate the data results of each ion collision, including the position of the incident ion during the collision, the position of the target atom, the collision angle, the collision energy loss, and the collision damage. It is only necessary to operate the position data according to the symmetry. There is no need to consider each specific collision process in the middle.

[0109] Fig.19 The scheme of "ion collision trajectory replication" shown can be applied to any situation. In this scheme, there is no need to consider the division of regions.

[0110] Taking efficiency factors into consideration, for example, some areas can be processed with Solution 1, while some areas cannot. In this case, the areas to which Solution 1 can be applied can be processed with Solution 1 first, and the remaining areas can be processed with Solution 2.

[0111] The simulation acceleration method of the ion implantation process of the embodiment of the present disclosure is used in the ion implantation module of the TCAD simulation software.

[0112] Some embodiments of the present disclosure describe the implementation of computational acceleration of ion implantation simulation by applying “similar region collision result replication” and “ion collision trajectory replication”. Both schemes can be performed independently, and scheme 2 can also be further adopted in scheme 1 to achieve a more efficient acceleration process.

[0113] Some embodiments of the present disclosure propose an accelerated calculation method based on Monte Carlo simulation of ion implantation, which can greatly reduce the repeatable calculation process, greatly save calculation time and improve the calculation scale without affecting the accuracy of the results.

[0114] Some embodiments of the present disclosure provide methods for ion implantation simulation. It should be noted that the examples given in the above embodiments are only for illustrating the solutions of the embodiments of the present disclosure, and are not intended to limit the solutions of the present disclosure.

[0115] It should be understood that the embodiments shown in the drawings are only for schematically illustrating the solutions of some embodiments of the present disclosure and are not intended to limit the present disclosure. The embodiments of the present disclosure may also have various other forms.

[0116] An electronic device is also disclosed in an embodiment of the present disclosure. The electronic device includes: a processor; and a memory coupled to the processor, the memory having instructions stored therein, and the instructions, when executed by the processor, cause the device to perform actions, the actions including: determining the initial position of each ion in the exposed surface of the simulated semiconductor device; determining first collision data generated by the collision of a specified reference ion among each ion with a material atom of the semiconductor device during the implantation process; determining second collision data of other ions based on a comparison of surrounding material information of other ions among each ion with surrounding material information of the reference ion; and determining the distribution status of each ion in the simulated semiconductor based on the first collision data and the second collision data.

[0117] An embodiment of the present disclosure further discloses a computer-readable storage medium on which a computer program is stored. When the program is executed by a processor, the method for ion implantation simulation according to the embodiment of the present disclosure is implemented.

[0118] Fig. 20 A schematic block diagram of an electronic device according to some exemplary embodiments of the present disclosure is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present disclosure described and / or required herein.

[0119] like Fig. 20 As shown, the device 2000 includes a CPU 2001, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 2002 or a computer program loaded from a storage unit 2008 into a random access memory (RAM) 2003. In the RAM 2003, various programs and data required for the operation of the device 2000 can also be stored. The CPU 2001, the ROM 2002, and the RAM 2003 are connected to each other via a bus 2004. An input / output (I / O) interface 2005 is also connected to the bus 2004.

[0120] Multiple components in the device 2000 are connected to the I / O interface 2005, including: an input unit 2006, such as a keyboard, a mouse, etc.; an output unit 2007, such as various types of displays, speakers, etc.; a storage unit 2008, such as a disk, an optical disk, etc.; and a communication unit 2009, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 2009 allows the device 2000 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0121] The various processes and processing described above, such as method 700, may be executed by CPU 2001. For example, in some embodiments, method 700 may be implemented as a computer software program, which is tangibly contained in a machine-readable medium, such as storage unit 2008. In some embodiments, part or all of the computer program may be loaded and / or installed on device 2000 via ROM 2002 and / or communication unit 2009. When the computer program is loaded into RAM 2003 and executed by CPU 2001, one or more steps in method 700 described above may be performed.

[0122] The scheme according to the embodiment of the present disclosure may be a method, an apparatus, a system and / or a computer program product. The computer program product may include a computer-readable storage medium on which computer-readable program instructions for executing various aspects of the present disclosure are loaded. The computer-readable storage medium may be a tangible device that can hold and store instructions used by an instruction execution device. The computer-readable program instructions may be downloaded from the computer-readable storage medium to various computing / processing devices, or downloaded to an external computer or external storage device via a network, such as the Internet, a local area network, a wide area network and / or a wireless network.

[0123] Various embodiments of the present disclosure have been described above, and the above description is exemplary and is only an optional embodiment of the present disclosure, not exhaustive, and is not intended to limit the present disclosure. Although the claims in this application have been formulated for specific combinations of features, it should be understood that the scope of the present disclosure also includes any novel features or any novel combination of features disclosed herein, whether or not it relates to the same scheme in any claim currently claimed for protection. It should be understood that new claims may be formulated into these features and / or combinations of these features during the examination of this application or in any further application derived therefrom.

[0124] The terms used in this article are selected to best explain the principles of each embodiment, practical application or technical improvement in the market, or to enable other ordinary technicians in the field to understand the embodiments disclosed herein. For those skilled in the art, the present disclosure may have various changes and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A method for ion implantation simulation, comprising: determining initial positions of individual ions in an exposed surface of a simulated semiconductor device; Determine first collision data generated by collision of a specified reference ion among the ions with material atoms of the semiconductor device during an implantation process; determining second collision data of each of the other ions based on comparison of surrounding material information of the other ions among the ions with surrounding material information of the reference ion; as well as The distribution status of each ion in the simulated semiconductor is determined based on the first collision data and the second collision data.

2. The method according to claim 1, wherein the simulated semiconductor device is divided into a plurality of three-dimensional regions including the exposed surface according to a predetermined rule, each of the regions includes a region with the same material, similar structure or the same structure, wherein determining the second collision data of the other ions based on the comparison of the surrounding material information of the other ions among the various ions with the surrounding material information of the reference ion comprises: Based on the similarity between the other regions where the other ions are located and the reference region where the reference ion is located and the similarity between the ranges of the collision trajectories of the reference ion and the other ions, a first collision position after the collision of the reference ion in the reference region is moved, rotated or mirror-symmetric to generate a transformed collision position; as well as The transformed collision position is copied to corresponding other regions as the collision position of corresponding other ions.

3. The method according to claim 2, wherein the collision trajectory of the reference ion in the entire ion implantation process is limited to a predetermined area at least including the reference area, and determining the second collision data of the other ions based on the comparison of the surrounding material information of the other ions in the respective ions with the surrounding material information of the reference ion comprises: In response to determining that the other region where the other ions are located has a corresponding region with the reference region, each first collision position of each ion in the reference region is translated and copied to the corresponding region as a second collision position of the corresponding other ion; In response to determining that the other region where the other ions are located has a corresponding region with the reference region but has a different initial position, each first collision position of the ions in the reference region is correspondingly moved based on the difference between the initial positions of the reference region and the other region and then copied to the corresponding region as the second collision position of the corresponding other ions; or In response to determining that the other region where the other ions are located has a mirror-symmetric structure with the reference region, the first collision position is mirror-symmetrically copied to the corresponding region as a second collision position of the corresponding other ions. 4 . The method according to claim 3 , wherein the collision trajectory of the reference ion is limited to the predetermined area based on the position of each ion and the corresponding boundary information of each area.

5. The method according to any one of claims 1 to 4, wherein each of the regions further comprises an additional region whose structure is different from and not similar to that of the reference region, and for the additional region, the method further comprises: Determine a first state of the reference ion before each collision, wherein the first state is related to the position, energy, velocity and surrounding atomic information of the reference ion; Determining the trajectory of the reference ion after each collision; Post-collision trajectory data of the additional ions is determined based on a comparison of the states of the additional ions in the additional region and the reference ions before each collision.

6. The method according to claim 5, wherein determining the trajectory data of the additional ions after collision based on the comparison of the states of the additional ions in the additional region before each collision with the reference ions comprises: In response to determining that the state of the additional ion before collision is consistent with the first state of the reference ion before the corresponding collision, copying the corresponding trajectory data of the reference ion after collision to the additional ion as the trajectory data of the additional ion after collision; In response to determining that the pre-collision state of the additional ion is inconsistent with the first state of the reference ion before the corresponding collision, performing a calculation based on the pre-collision state of the additional ion to determine post-collision trajectory data for the additional ion; or In response to determining that before a corresponding collision, except for a geometric transformation in the direction of position and velocity relative to the direction of position and velocity of the reference ion, the state of the additional ion is consistent with the state of the reference ion, and the trajectory data of the reference ion is subjected to a corresponding geometric transformation and used as the trajectory data of the additional ion.

7. The method according to claim 1, wherein determining the second collision data of the other ions based on the comparison of the surrounding material information of the other ions among the respective ions with the surrounding material information of the reference ion comprises: Determine a first state of the reference ion before each collision, wherein the first state is related to the position, energy, velocity and surrounding atomic information of the reference ion; Determining the trajectory of the reference ion after each collision; The trajectory data of the other ions after the collision are determined based on the comparison of the states of the other ions before each collision with the reference ions.

8. The method according to claim 7, wherein determining the trajectory data of the other ions after collision based on the comparison of the states of the other ions before each collision with the reference ion comprises: In response to determining that the state of the other ions before collision is consistent with the first state of the reference ion before the corresponding collision, copying the corresponding trajectory data of the reference ion after collision to the other ions as the trajectory data of the other ions after collision; In response to determining that the state of the other ions before collision is inconsistent with the first state of the reference ion before the corresponding collision, performing calculations based on the state of the other ions before collision to determine post-collision trajectory data of the other ions; or In response to determining that before a corresponding collision, except for a geometric transformation in the direction of position and velocity relative to the direction of position and velocity of the reference ion, the states of the other ions are consistent with the state of the reference ion, the trajectory data of the reference ion is subjected to a corresponding geometric transformation and used as the trajectory data of the other ions.

9. The method according to claim 8, wherein the state of the other ions before collision is inconsistent with the first state of the reference ion before the corresponding collision, including at least one of the following differences: The energy of the other ions at the collision site and the energy of the reference ion at the collision site; The velocity of the other ions at the collision point and the velocity of the reference ion at the collision point; and The surrounding atomic information at the collision site of the other ions is the surrounding atomic information at the collision site corresponding to the reference ion.

10. The method of claim 1, wherein the exposed surface is uniformly divided into a plurality of regions, and wherein determining initial positions of respective ions in the exposed surface of the simulated semiconductor device comprises: The initial positions of the same number of ions are generated in each region of the exposed surface by a Monte Carlo algorithm.

11. An electronic device, comprising: processor; as well as A memory coupled to the processor, the memory having instructions stored therein, the instructions causing the device to perform actions when executed by the processor, the actions comprising: determining initial positions of individual ions in an exposed surface of a simulated semiconductor device; Determine first collision data generated by collision of a specified reference ion among the ions with material atoms of the semiconductor device during an implantation process; determining second collision data of each of the other ions based on comparison of surrounding material information of the other ions among the ions with surrounding material information of the reference ion; and The distribution conditions of the reference ions and the other ions in the simulated semiconductor are determined based on the first collision data and the second collision data.

12. A computer-readable storage medium having machine-executable instructions stored thereon, which, when executed by a processor, enables the processor to implement the method according to any one of claims 1 to 10.

Images