Mask, film forming method, and film forming apparatus

By introducing magnetic bodies into the non-magnetic mask, and using the magnetic force of the magnet plate to make the substrate and the mask tightly fit, the problem of poor clingibility between the substrate and the mask under the non-magnetic mask is solved, and the film formation quality is improved.

CN119836487APending Publication Date: 2025-04-15CANON TOKKI CORP
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Patent Information

Application Number
CN202380064052.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-09-20
Filing Date
2023-08-14
Publication Date
2025-04-15

AI Technical Summary

Technical Problem

When the mask is a non-magnetic body, it is difficult to use magnetic force to make the substrate and the mask close to each other, which affects the film formation quality.

Method used

A magnetic body is introduced into a mask made of a non-magnetic body, and the magnetic body formed on the mask body can interact with the magnetic force of the magnet plate, thereby improving the clinging between the substrate and the mask.

Benefits of technology

By introducing a magnetic body, the clinging between the substrate and the mask is improved when a non-magnetic mask is used, thereby improving the quality and accuracy of film formation.

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Abstract

A mask having an opening for forming a pattern of a vapor deposition substance on a substrate, the mask being provided with: a mask main body which is a non-magnetic material and has the opening; and a magnetic body which is formed on the mask main body.
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Description

Technical Field

[0001] The present invention relates to a film forming technology on a substrate, and relates to a mask, a film forming method and a film forming device. Background Art

[0002] There is a known technique for forming a film by evaporating a deposition material onto a substrate through a mask after aligning the substrate and the mask. The film formation is performed in a state where the aligned substrate and the mask are in close contact with each other. There is a known technique for using magnetic force to make the substrate and the mask in close contact. For example, a substrate is arranged between a mask and a magnet plate, and the magnetic force between the mask and the magnet plate is used to make the substrate and the mask in close contact (for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2017 / 222009 Summary of the invention

[0006] Problems to be solved by the invention

[0007] If the mask is a magnetic body such as an iron mask, the substrate and the mask can be brought into close contact with each other by utilizing magnetic force. However, if the mask is a non-magnetic body, it is difficult to utilize magnetic force.

[0008] The present invention provides a technology capable of improving the close contact between a substrate and a mask while using a mask made of a non-magnetic material.

[0009] Solutions to Solve Problems

[0010] According to the present invention, there is provided a mask having an opening for forming a film of a pattern of a vapor deposition substance on a substrate, wherein the mask comprises:

[0011] a mask body, the mask body being a non-magnetic body and having the opening; and

[0012] A magnetic body is formed on the mask body.

[0013] Effects of the Invention

[0014] According to the present invention, it is possible to provide a technique capable of improving the adhesion between a substrate and a mask while using a mask made of a non-magnetic material. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic diagram of a portion of a production line for electronic devices.

[0016] Figure 2 This is a schematic diagram of a film forming apparatus according to one embodiment of the present invention.

[0017] Figure 3 It is a three-dimensional image of the substrate and the mask and a partial enlarged image of the mask.

[0018] Figure 4A yes Figure 3 A-A line cross-sectional view.

[0019] Figure 4B yes Figure 3 BB line cross-sectional view.

[0020] Figure 4C yes Figure 3 C-C line cross-sectional view.

[0021] Figure 5 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0022] Figure 6 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0023] Figure 7 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0024] Figure 8 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0025] Fig. 9 yes Figure 2 A diagram illustrating the operation of the film forming device.

[0026] Fig. 10A This is an explanatory diagram of another structural example of the substrate.

[0027] Fig. 10B This is an explanatory diagram of another structural example of the substrate.

[0028] Fig.11A This is an explanatory diagram of another structural example of the substrate.

[0029] Fig. 11B This is an explanatory diagram of another structural example of the substrate.

[0030] Fig. 12A This is an explanatory diagram of another structural example of a mask.

[0031] Fig. 12B This is an explanatory diagram of another structural example of a mask.

[0032] Fig. 12C This is an explanatory diagram of another structural example of a mask. DETAILED DESCRIPTION

[0033] The following embodiments are described in detail with reference to the accompanying drawings. In addition, the following embodiments do not limit the invention involved in the claims. Although multiple features are described in the embodiments, not all of the multiple features are necessarily required for the invention, and multiple features can be combined arbitrarily. In addition, in the accompanying drawings, the same or similar structures are marked with the same figure numbers, and repeated descriptions are omitted.

[0034] <First embodiment>

[0035] <Electronic device production line>

[0036] Figure 1 Schematic diagram showing a part of the structure of a production line 100 of electronic devices to which the film forming apparatus of the present invention can be applied. In each figure, arrows X and Y indicate mutually orthogonal horizontal directions, and arrow Z indicates the up-down direction (gravity direction). Figure 1 The production line 100 is used, for example, for manufacturing light-emitting elements of an organic EL display device. The production line 100 includes a conveying chamber 120 having an octagonal shape when viewed from above. A substrate 101 is conveyed into the conveying chamber 120 from a conveying path 110 , and the film-formed substrate 101 is conveyed out of the conveying chamber 120 to a conveying path 111 .

[0037] A plurality of film forming apparatuses 1 for performing film forming processes on the substrate 101 are arranged around the transfer chamber 120. A transfer chamber 130 is arranged adjacent to each film forming apparatus 1. A storage chamber 140 for storing the mask 102 is arranged around the transfer chamber 130 having an octagonal shape in plan view.

[0038] The conveying chamber 120 is provided with a conveying unit 121 for conveying the substrate 101. The conveying unit 121 of the present embodiment is a horizontal multi-jointed robot, which carries the substrate 101 in a horizontal position on its hand and conveys it. The conveying unit 121 performs a conveying operation of conveying the substrate 101 conveyed from the conveying path 110 to the film forming device 1 and a conveying operation of conveying the substrate 101 on which a film has been formed in the film forming device 1 from the film forming chamber 1 to the conveying path 111.

[0039] A transport unit 131 for transporting the mask 102 is disposed in each transport chamber 130. The transport unit 131 of this embodiment is a horizontal multi-joint robot, which carries the mask 102 in a horizontal posture on its hand and transports it. The transport unit 131 performs an operation of transporting the mask 102 from the storage chamber 140 to the film forming device 1, and an operation of transporting the mask 102 from the film forming device 1 to the storage chamber 140.

[0040] <Film forming equipment>

[0041] Figure 2This is a schematic diagram of a film forming apparatus 1 according to an embodiment of the present invention. The film forming apparatus 1 is an apparatus for forming a film of a vapor deposition substance on a substrate 101, and a thin film of the vapor deposition substance in a predetermined pattern is formed using a mask 102. The material of the substrate 101 on which the film is formed in the film forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal. In particular, in this embodiment, the substrate 101 is, for example, a glass substrate on which a TFT (Thin Film Transistor) is formed, or a silicon wafer on which a semiconductor element is formed.

[0042] The vapor deposition material includes organic materials, inorganic materials (metals, metal oxides, etc.), etc. The film forming device 1 can be applied to a manufacturing device for manufacturing electronic devices or optical components such as display devices (flat panel displays, etc.), thin film solar cells, organic photoelectric conversion elements (organic thin film imaging elements), etc., and can be applied to a manufacturing device for manufacturing organic EL panels in particular. In the following description, an example in which the film forming device 1 forms a film on the substrate 101 by vacuum vapor deposition is described, but the present invention is not limited to this, and various film forming methods such as sputtering and CVD can be applied.

[0043] The film forming apparatus 1 has a box-shaped vacuum chamber 2. The internal space of the vacuum chamber 2 is maintained in a vacuum environment or an inert gas environment such as nitrogen. In the present embodiment, the vacuum chamber 2 is connected to a vacuum pump not shown in the figure. A vapor deposition unit 10 is arranged in the internal space of the vacuum chamber 2. The vapor deposition unit 10 has a vapor deposition source that discharges a vapor deposition substance upward. A baffle 10a that restricts and releases the discharge of the vapor deposition substance is arranged above the vapor deposition unit 10. The baffle 10a is opened and closed by an opening and closing mechanism not shown in the figure. Figure 2 The shutter 10a is shown in a closed state, which limits the release of the vapor deposition material from the vapor deposition unit 10. In addition, an anti-adhesion plate 2a is arranged above the vapor deposition unit 10. The anti-adhesion plate 2a prevents the vapor deposition material from being unnecessarily attached to the following structure arranged in the upper part of the internal space of the vacuum chamber 2.

[0044] A substrate support plate 3 is provided in the internal space of the vacuum chamber 2 to support the substrate 101 in a horizontal posture. In the case of the present embodiment, the substrate support plate 3 is an electrostatic chuck, and the substrate 101 is adsorbed and held by electrostatic force on its lower surface. A cooling plate 4 is fixed to the substrate support plate 3. The cooling plate 4 has, for example, a water cooling mechanism, and cools the substrate 101 via the substrate support plate 3 during film formation.

[0045] The substrate support plate 3 and the cooling plate 4 are suspended on the magnet plate 5 via the support portion 5a so as to be displaceable in the Z direction. The magnet plate 11 is a plate that attracts the mask 102 by magnetic force. During film formation, the substrate 101 is sandwiched between the magnet plate 11 and the mask 102 by the action of the magnetic force, so that the adhesion between the substrate 101 and the mask 102 can be improved.

[0046] The film forming device 1 includes a mask support unit 6 that supports the mask 102 during film forming. In the case of the present embodiment, the mask support unit 6 also performs a transfer operation of the substrate 101 between the conveying unit 121 and the substrate support plate 3. The mask support unit 6 includes a pair of support members 6a separated in the X direction. Each support member 6a is raised and lowered by a corresponding actuator 6b. In the present embodiment, an actuator 6b is provided for each support member 6a, but a pair of support members 6a may also be raised and lowered by one actuator 6b. The actuator 6b is, for example, an electric cylinder or an electric ball screw mechanism. The support member 6a includes a claw portion F1 at its lower end portion. The peripheral edge portions of the substrate 101 and the mask 102 are placed on the claw portion F1. Figure 2 In the example of FIG. 1 , the mask 102 is placed on the claw portion F1 . The pair of support members 6 a are moved up and down synchronously to move the substrate 101 and the mask 102 up and down.

[0047] The film forming apparatus 1 includes an alignment unit 8 for aligning the substrate 101 and the mask 102. The alignment unit 8 includes a drive mechanism 80 and a plurality of measurement units SR. The drive mechanism 80 includes a distance adjustment unit 81, a support shaft 82, a stage 83, and a position adjustment unit 84.

[0048] The distance adjustment unit 81 is a mechanism for raising and lowering the support shaft 82 in the Z direction, and is provided with an electric cylinder or an electric ball screw mechanism, for example. A magnet plate 5 is fixed to the lower end of the support shaft 82, and the substrate support plate 3 is raised and lowered via the magnet plate 5 by raising and lowering the support shaft 82. By raising and lowering the substrate support plate 3, the distance between the substrate 101 and the mask 102 is adjusted, so that the substrate 101 supported on the substrate support plate 3 and the mask 102 are brought close to and away from (separated from) in the thickness direction (Z direction) of the substrate 101. In other words, the distance adjustment unit 81 brings the substrate 101 and the mask 102 close to each other in the overlapping direction or away from each other in the opposite direction. In addition, the "distance" adjusted by the distance adjustment unit 81 is the so-called vertical distance (or plumb distance), and the distance adjustment unit 81 can also be said to be a unit for adjusting the vertical position of the substrate 101. The distance adjustment unit 81 is mounted on the position adjustment unit 84 via the stand 83.

[0049] The position adjustment unit 84 adjusts the relative position of the substrate 101 with respect to the mask 102 by displacing the substrate support plate 3 on the X-Y plane. That is, the position adjustment unit 80 can also be said to be a unit for adjusting the horizontal position of the mask 102 and the substrate 101. The position adjustment unit 80 can displace the substrate support plate 6 in the X direction, the Y direction, and the rotation direction (θ direction) around the axis in the Z direction. In the present embodiment, the position of the mask 102 is fixed, and the substrate 101 is displaced to adjust their relative positions, but the mask 102 may be displaced to make the adjustment, or both the substrate 101 and the mask 102 may be displaced.

[0050] The position adjustment unit 84 includes a fixed plate 20a and a movable plate 20b. The fixed plate 84a and the movable plate 84b are rectangular frame-shaped plates, and the fixed plate 84a is fixed to the upper wall portion 20 of the vacuum chamber 2. An actuator is provided between the fixed plate 20a and the movable plate 20b to displace the movable plate 20b in the X direction, the Y direction, and the rotation direction around the axis in the Z direction relative to the fixed plate 20a.

[0051] A frame-shaped stand 83 is mounted on the movable plate 84b, and the stand 83 supports the distance adjustment unit 81. When the movable plate 84b is displaced, the stand 83 and the distance adjustment unit 81 are displaced integrally. Thus, the substrate 101 can be displaced in the X direction, the Y direction, and the rotation direction around the axis in the Z direction. An opening is formed in the upper wall portion 20 through which the support shaft 82 and the support members 6a and 7a pass. These openings are sealed by a sealing member (bellows, etc.) not shown in the figure to maintain the airtightness in the vacuum chamber 2.

[0052] The measuring unit SR measures the positional deviation between the substrate 101 and the mask 102. The measuring unit SR of the present embodiment is a photographing device (camera) for photographing an image. The measuring unit SR is disposed on the upper wall portion 20 and is capable of photographing an image in the vacuum chamber 2. Alignment marks (not shown) are formed on the substrate 101 and the mask 102, respectively. The measuring unit SR photographs the alignment marks of the substrate 101 and the mask 102. The positional deviation between the substrate 101 and the mask 102 is calculated based on the position of each alignment mark, and the relative position of the substrate 101 and the mask 102 is adjusted by the position adjustment unit 84 to eliminate the positional deviation.

[0053] The control device 9 controls the entire film forming device 1. The control device 9 includes a processing unit 90, a storage unit 91, an input / output interface (I / O) 92, and a communication unit 93. The processing unit 90 is a processor represented by a CPU, and executes a program stored in the storage unit 92 to control the film forming device 1. The storage unit 91 is a storage device such as a ROM, RAM, HDD, etc., which stores various control information in addition to the program executed by the processing unit 90. The I / O 92 is an interface for sending and receiving signals between the processing unit 90 and an external device. The communication unit 93 is a communication device that communicates with a host device or other control devices via a communication line.

[0054] <Example of the structure of substrate and mask>

[0055] Figure 3 An example of a substrate 101, a mask 102, and an electrostatic chuck 103 is shown. The substrate 101 is a circular silicon wafer, and after film formation, a plurality of chips 101a are cut out from the substrate 101. The mask 102 is a circular member similar to the substrate 101, and includes a mask portion 102b corresponding to each chip 101a and a frame portion 102a around the mask portion 102b. The mask portion 102b is formed with a plurality of openings (through holes) 102c through which the deposition material to be deposited on the substrate 101 passes, and the film formation pattern on the substrate 101 is defined by the configuration of the openings 102c.

[0056] Figure 4A to Figure 4C yes Figure 3 AA line cross-sectional view, BB line cross-sectional view and CC line cross-sectional view. The mask 102 includes a mask body 1020 and a magnetic body 1021 formed on the mask body 1020. The mask body 1020 is made of a non-magnetic material such as silicon (Si). By using a silicon wafer as the mask body 1020, a finer and more precise opening portion 102c can be formed by applying semiconductor manufacturing technology. The frame portion 102a is a relatively thick thick-walled portion, and the mask portion 102b is a relatively thin thin-walled portion. The rigidity of the frame portion 102a is higher than that of the mask portion 102b. The mask portion 102b can be formed thin without significantly reducing the rigidity of the entire mask 102.

[0057] A plurality of slits 102d are formed on the surface of the mask body 102. Each slit 102d is a bottomed groove having a cross shape in a plan view formed in the mask portion 102b. By forming the slits 102d, when stress acts on the mask body 102, deformation at the slits 102 can be allowed to prevent damage such as cracks in the mask body 102.

[0058] The magnetic body 1021 is, for example, a thin film of a magnetic material such as nickel (Ni). In the present embodiment, the magnetic force of the magnet plate 5 is used to make the mask 102 and the substrate 101 close to each other during film formation. When the mask body 1020 is made of a non-magnetic body as in the present embodiment, the close contact effect caused by the magnetic force cannot be obtained in the original state. By forming the magnetic body 1021 in the mask body 1020, the magnetic force of the magnet plate 5 acts on the magnetic body 1021, and the close contact effect of the mask 102 and the substrate 101 caused by the magnetic force can be obtained.

[0059] The magnetic body 1021 of this embodiment is formed on the surface of the mask body 1020, especially on the surface overlapping with the substrate 101. It is possible to obtain a close contact effect between the mask 102 and the substrate 101 caused by magnetic force. In addition, the magnetic body 1021 is formed to surround each opening 102c, especially in this embodiment, it is formed as a lattice shape with vertical and horizontal straight lines orthogonal to each other. It is possible to improve the close contact effect with the substrate 101 caused by magnetic force around the opening 102c, and it is possible to accurately deposit the vapor deposition material released through the opening 102c to the target part of the substrate 101.

[0060] <Control Example>

[0061] An example of control of the film forming apparatus 1 executed by the processing unit 90 of the control unit 9 will be described. Figures 5 to 9 It is an operation explanation diagram of the film forming apparatus 1 , and shows an example in which film formation is performed from the carrying in of the substrate 101 to the carrying out of the substrate 101 .

[0062] Figure 5 State ST51 represents a state where the substrate 101 is transported into the vacuum chamber 2. The substrate 101 is transported to the bottom of the substrate support plate 3 by the transport robot 121. The substrate adsorption surface 3a of the lower surface of the substrate support plate 3 is horizontal. Then, the substrate 101 is moved from the transport robot 121 to the substrate support plate 3 by the mask support unit 6. Figure 5 The state ST52 shows the operation. By raising the supporting member 6a, the periphery of the substrate 101 is placed on the claw F1, and the substrate 101 is raised from the conveying robot 121 and pressed against the substrate adsorption surface 3a of the substrate supporting plate 3. The electrostatic suction cup of the substrate supporting plate 3 is operated to adsorb and hold the substrate 101.

[0063] Next, the mask 102 is carried into the vacuum chamber 2 . Figure 6 State ST61 represents a state where the mask 102 is transported into the vacuum chamber 2. The mask 102 is transported from the storage chamber 140 into the vacuum chamber 2 by the transport robot 131. The mask 102 is located directly below the substrate 101. Then, the mask 102 is transferred from the transport robot 131 to the mask support unit 6 so that it is located at the alignment position. Figure 6The state ST62 shows its action. By raising the supporting member 6a, the periphery of the mask 102 is placed on the claw F1, and the mask 102 is raised from the conveying robot 131. The mask 102 is supported by the supporting member 6a, and is located at the alignment position by further rising. In this embodiment, the mask 102 is raised to be located at the alignment position, but it may also be a structure in which the substrate 101 is lowered to be located at the alignment position.

[0064] Then, perform the alignment action. Figure 7 As shown in state ST71, the relative position of the alignment mark of the substrate 101 and the alignment mark of the mask 102 is measured by the measuring unit SR. If the measurement result (the positional deviation amount between the substrate 101 and the mask 102) is within the allowable range, the alignment operation is terminated. If the measurement result is outside the allowable range, a control amount (displacement amount of the substrate 101) for controlling the positional deviation amount within the allowable range is set based on the measurement result.

[0065] The "position offset" is defined by the distance and direction (X, Y, θ) of the position offset. Based on the set control amount, such as Figure 7 As shown in the state ST72 , the position adjustment unit 80 operates. As a result, the substrate support plate 3 is displaced on the XY plane, and the relative position of the substrate 101 with respect to the mask 102 is adjusted.

[0066] Whether or not the measurement result is within the allowable range can be determined by, for example, calculating the distances between the alignment marks and comparing the average value or the sum of squares of the distances with a preset threshold value.

[0067] After the relative position is adjusted, the relative position of the alignment mark of the substrate 101 and the alignment mark of the mask 102 is measured again by the measurement unit SR. If the measurement result is within the allowable range, the alignment operation is terminated. If the measurement result is outside the allowable range, the relative position of the substrate 101 with respect to the mask 102 is adjusted again. Thereafter, the measurement and relative position adjustment are repeated until the measurement result falls within the allowable range.

[0068] Then, a film forming operation is performed. First, the substrate 101 and the mask 102 are overlapped. Figure 8 The state ST81 shows its action. When the substrate support plate 3 is lowered, the substrate 101 is placed on the mask 102, and the entire processed surface of the substrate 101 contacts the mask 102. The magnet plate 5 abuts against the cooling plate 4, and the magnet plate 5, the cooling plate 4, the substrate support plate 3, the substrate 101 and the mask 102 are in close contact from top to bottom. The magnetic force of the magnet plate 5 can be used to attract the mask 102, so that the mask 102 and the substrate 101 are in close contact as a whole. Since the mask 102 has a magnetic body 1021 ( Figure 3 , Figure 4B as well as Figure 4C ), so that a stronger magnetic adsorption force can be obtained. Thus, according to this embodiment, the adhesion between the substrate 101 and the mask 102 can be improved while using the mask 102 made of a non-magnetic system. In addition, even if stress is generated in the mask body 1020 due to the action of the magnetic force, deformation can be allowed at the slit 102d to prevent damage such as cracks in the mask 1020.

[0069] Through the above steps, the preparation for film formation is completed, and then, Figure 8 As shown in the state ST82 , the shutter 10 a is opened to release the vapor deposition material from the vapor deposition unit 10 . The vapor deposition material is vapor deposited onto the substrate 101 through the mask 102 .

[0070] After the film formation is completed, the mask 102 and the substrate 101 are respectively carried out. Fig. 9 State ST91 shows the action of sending out the mask 102. First, the magnet plate 5 is raised to separate the substrate 101 from the mask 102. After the hand of the transport robot 131 enters under the mask 102, the support member 6a of the mask support unit 6 is lowered to transfer the mask 102 from the support member 6a to the transport robot 131. The transport robot 131 transports the mask 102 to the storage chamber 140.

[0071] Next, the film-formed substrate 101 is sent out. The support member 6a of the mask support unit 6 is raised to support the substrate 101 from the bottom by the claw F1. The substrate support unit 3 releases the adsorption of the substrate 101 and transfers the substrate 101 to the support member 6a. After the hand of the transport robot 121 enters under the substrate 101, Fig. 9 As shown in state ST92, the support member 6a of the mask support unit 6 is lowered, and the substrate 101 is transferred from the support member 6a to the conveying robot 121. The conveying robot 121 conveys the substrate 101 to the conveying path 111. Through the above steps, the film formation from the feeding of the substrate 101 to the feeding out is completed.

[0072] <Second embodiment>

[0073] A magnetic body may also be formed on the substrate 101 . Fig. 10A and Fig. 10B These figures are equivalent to Figure 4B , and is a diagram also showing a cross-sectional view of the substrate 101 aligned with respect to the mask 102.

[0074] like Fig. 10AAs shown, on the substrate 101, a magnetic body 101d is formed around a pixel region 101b as a vapor deposition target portion. In the example shown in the figure, the magnetic body 101d is formed on the surface of a bank 101c around the pixel region 101b. The magnetic body 101d is, for example, a thin film of a magnetic material such as nickel (Ni). The magnetic body 101d and the magnetic body 1021 are arranged at a position where they overlap each other when the substrate 101 and the mask 102 are properly aligned.

[0075] Fig. 10B The state where the substrate 101 and the mask 102 are overlapped after the alignment of the substrate 101 and the mask 102 is shown. The magnetic body 101d and the magnetic body 1021 are attracted to each other by the magnetic force of the magnet plate 5, thereby improving the close contact between the substrate 101 and the mask 102. In addition, by attracting the magnetic body 101d and the magnetic body 1021 to each other, the relative positions of the opening 102c and the one pixel area 101b are automatically aligned, and the deposition material can be more accurately deposited on the one pixel area 101b as the deposition target portion through the opening 102c.

[0076] <Third embodiment>

[0077] A magnet may be formed on the substrate 101 . Fig.11A and Fig. 11B These figures are equivalent to Figure 4B , and is a diagram also showing a cross-sectional view of the substrate 101 aligned with respect to the mask 102.

[0078] like Fig.11A As shown in the figure, on the substrate 101, a magnet 101e is formed around a pixel region 101b as a vapor deposition target portion. In the example shown in the figure, the magnet 101e is formed on the surface of the bank 101c around the pixel region 101b. The magnet 101e is, for example, a thin film of a magnetic material such as nickel or cobalt. The magnet 101e and the magnetic body 1021 are arranged at a position where they overlap each other when the substrate 101 and the mask 102 are properly aligned.

[0079] Fig. 11B The state where the substrate 101 and the mask 102 are overlapped after the alignment of the substrate 101 and the mask 102 is shown. In addition to the attraction caused by the magnetic force of the magnet plate 5, the magnet 101e and the magnetic body 1021 attract each other, thereby improving the close contact between the substrate 101 and the mask 102. In addition, by causing the magnet 101e and the magnetic body 1021 to attract each other, the relative positions of the opening 102c and the one pixel area 101b are automatically aligned, and the deposition material can be more accurately deposited on the one pixel area 101b as the deposition target portion through the opening 102c.

[0080] In the case of this embodiment, the magnet plate 5 can be omitted, and the substrate 101 and the mask 102 can be brought into close contact with each other by the magnetic force of the magnet 101 e and the magnetic body 1021 .

[0081] <Fourth embodiment>

[0082] Reference Figures 12A to 12C Another structural example of the mask 102 related to the magnetic body 1021 will be described. Figure 4B sectional view of .

[0083] Fig. 12A The figure shows a structural example in which a spacer 1022 is interposed between the magnetic body 1021 and the mask body 1020. The distance in the Z direction between the end of the opening 102c and the substrate 101 can be designed to be a desired distance by the thickness of the spacer 1022 in the Z direction. In addition, when a material having elasticity is used as the spacer 1022, it is possible to achieve impact relief when the substrate 101 and the mask 102 are brought into close contact.

[0084] exist Fig. 12B In the embodiment, the magnetic body 1021A replacing the magnetic body 1021 includes a portion 1021a formed on the inner peripheral surface of the opening 102c in addition to the portion formed on the surface of the mask body 1020. By forming the magnetic body on the inner peripheral surface of the opening 102c, the adhesion between the substrate 101 and the mask 102 by the magnetic force of the magnet plate 5 can be further improved.

[0085] exist Fig. 12C In the embodiment, the magnetic body 1021B replacing the magnetic body 1021 and Fig. 11B In the same manner as in the example, in addition to the portion formed on the surface of the mask body 1020, the portion 1021b formed on the inner peripheral surface of the opening 102c is included. However, the magnetic body 1021B is formed on the surface of the mask body 1020 on the opposite side to the substrate 101 (the non-overlapping surface). In addition to further improving the adhesion between the substrate 101 and the mask 102 by the magnetic force of the magnet plate 5, since the magnetic body 1021B is not interposed between the substrate 101 and the mask 102 when the substrate 101 and the mask 102 are in close contact, the parallelism between the substrate 101 and the mask 102 can sometimes be improved.

[0086] <Other embodiments>

[0087] The present invention can also be implemented by providing a program that implements one or more functions of the above-mentioned embodiments to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. In addition, it can also be implemented by a circuit (for example, an ASIC) that implements one or more functions.

[0088] The present invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, claims are attached to disclose the scope of the invention.

[0089] Description of Reference Numerals

[0090] 1 film forming device, 5 magnet plate, 8 alignment unit, 10 evaporation unit, 101 substrate, 102 mask, 1021 magnetic body.

Claims

1. A mask having an opening for forming a pattern of a vapor deposition substance on a substrate, characterized in that: The mask has: a mask body, the mask body being a non-magnetic body and having the opening; and A magnetic body is formed on the mask body.

2. The mask according to claim 1, characterized in that The magnetic body includes a portion formed on the surface of the mask main body.

3. The mask according to claim 1, characterized in that The magnetic body includes a portion formed on the surface of the mask body around the opening.

4. The mask according to claim 1, characterized in that The magnetic body includes a portion formed on the inner peripheral surface of the opening.

5. The mask according to claim 1, characterized in that A plurality of slits are formed in the mask body.

6. The mask according to claim 1, characterized in that The magnetic body is formed in a lattice shape.

7. A film forming method, comprising: performing an alignment step of aligning a substrate and a mask having an opening for forming a film of a pattern of a vapor-deposited substance on the substrate; a step of bringing the substrate aligned in the alignment step and the mask into close contact with each other; and a vapor deposition step of releasing a vapor deposition material onto the substrate through the mask, It is characterized in that The mask has: a mask body, the mask body being a non-magnetic body and having the opening; and a magnetic body, wherein the magnetic body is formed on the mask body, In the above-mentioned adhesion process, The substrate and the mask are brought into close contact with each other by the action of a magnetic force on the magnetic body.

8. The film forming method according to claim 7, characterized in that: In the above-mentioned adhesion process, The substrate is arranged between the magnet plate and the mask.

9. The film forming method according to claim 8, characterized in that: A magnetic body is formed on the mask-side surface of the substrate at a location overlapping with the magnetic body formed on the mask main body.

10. The film forming method according to claim 9, characterized in that: The magnetic body of the mask includes a portion formed around the opening on the surface of the mask body. The magnetic body of the substrate is formed around a portion where a deposition material is deposited on the substrate.

11. The film forming method according to claim 7, characterized in that: A magnet is formed on the surface of the substrate on the mask side at a location overlapping with the magnetic body formed on the mask main body.

12. The film forming method according to claim 11, characterized in that: The magnetic body includes a portion formed on the surface of the mask body around the opening. The magnet of the substrate is formed around a portion where a deposition material is deposited on the substrate.

13. A film forming device, comprising: An alignment component, wherein the alignment component performs alignment between the substrate and the mask; a magnet plate, the magnet plate using magnetic force to make the aligned substrate and the mask closely attached; as well as a vapor deposition component that releases a vapor deposition substance toward the substrate via the mask, It is characterized in that The mask has: a mask body which is a non-magnetic body and has an opening for forming a pattern of a vapor-deposited substance on the substrate; and a magnetic body, wherein the magnetic body is formed on the mask body, The substrate is arranged between the magnet plate and the mask.

Citation Information

Patent Citations

  • Substrate mounting method, film formation method, and method for manufacturing electronic device

    WO2017222009A1