Semiconductor device

Abstract

Provided is a semiconductor device capable of improving characteristics. According to one embodiment, a semiconductor device includes first to third electrodes, first to fourth semiconductor components, and a first insulating member. The first semiconductor component is provided between the first electrode and the second electrode and is of a first conductivity type. The first semiconductor component includes a fifth partial region. The second semiconductor component is of a second conductivity type. The second semiconductor component includes a first semiconductor region and a second semiconductor region. The fifth partial region is located between the first semiconductor region and the second semiconductor region in the third direction. The third semiconductor component is of the second conductivity type. The fourth semiconductor component is of the first conductivity type.

Description

Technical Field

[0001] Embodiments of the present invention relate to a semiconductor device. Background Art

[0002] For example, in semiconductor devices including Schottky barrier diodes and the like, improvement in characteristics is desired.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2023-45865 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] Embodiments provide a semiconductor device capable of improving characteristics.

[0008] Means for solving technical problems

[0009] According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor component, a second semiconductor component, a third semiconductor component, a fourth semiconductor component, and a first insulating component. The first semiconductor component is disposed between the first electrode and the second electrode and is of a first conductivity type. The first semiconductor component includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. The second partial region and the third partial region are located between a portion of the first partial region and the second electrode in a first direction from the first electrode to the second electrode. A second direction from the second partial region to the third partial region intersects with the first direction. The fourth partial region is located between a portion of the third partial region and the second electrode in the first direction. The fourth partial region is in Schottky contact with the second electrode. The fifth partial region extends along the second direction. The fifth partial region is connected to the second partial region and the third partial region. The second semiconductor component is of a second conductivity type. The second semiconductor component includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, and a fifth semiconductor region. The first semiconductor region and the second semiconductor region are located between another portion of the first partial region and the second electrode in the first direction. The first semiconductor region and the second semiconductor region are located between the second partial region and the third partial region in the second direction. The third direction from the first semiconductor region to the second semiconductor region intersects a plane including the first direction and the second direction. The fifth partial region is located between the first semiconductor region and the second semiconductor region in the third direction. The third semiconductor region is located between the first semiconductor region and the second electrode in the first direction. The fourth semiconductor region is located between the second semiconductor region and the second electrode in the first direction. The fifth semiconductor region is located between the fifth partial region and the second electrode in the first direction. The third semiconductor component is of the second conductivity type. A portion of the third semiconductor component is located between the third semiconductor region and the second electrode and is electrically connected to the second electrode. A third impurity concentration of the second conductivity type in the third semiconductor component is higher than a second impurity concentration of the second conductivity type in the second semiconductor component. The fourth semiconductor component is of the first conductivity type. A portion of the fourth semiconductor component is located between the third semiconductor region and the second electrode and is electrically connected to the second electrode. A fourth impurity concentration of the first conductivity type in the fourth semiconductor component is higher than a first impurity concentration of the first conductivity type in the first semiconductor component. A direction from the second partial region to at least a portion of the third electrode is along the first direction.The first insulating component includes a first insulating region. The first insulating region is disposed between the second partial region and the at least a portion of the third electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 1 is a schematic isolated cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0011] Figure 2 It is a schematic perspective view illustrating the semiconductor device according to the first embodiment.

[0012] Figure 3 (a)~ Figure 3 (d) is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0013] Figure 4 It is a schematic plan view illustrating the semiconductor device according to the first embodiment.

[0014] Figure 5 (a)~ Figure 5 (d) is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment.

[0015] Figure 6 is a schematic cross-sectional view illustrating a semiconductor device according to a third embodiment.

[0016] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to a fourth embodiment. DETAILED DESCRIPTION

[0017] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0018] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as the actual ones. Even when the same part is shown, the size and ratio may be shown differently depending on the drawings.

[0019] In the present specification and each drawing, the same elements as those described above with respect to the drawings in which they appear are denoted by the same reference numerals, and detailed description thereof will be appropriately omitted.

[0020] (First Embodiment)

[0021] Figure 1 1 is a schematic isolated cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0022] Figure 2 It is a schematic perspective view illustrating the semiconductor device according to the first embodiment.

[0023] Figure 3 (a)~ Figure 3 (d) is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0024] like Figure 1 as well as Figure 2 As shown, the semiconductor device 110 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor component 11, a second semiconductor component 12, a third semiconductor component 13, a fourth semiconductor component 14, and a first insulating component 41. Figure 1 In FIG. 4 , the third electrode 53 and the first insulating member 41 are omitted. Figure 1 In the figure, the elements included in the semiconductor device 110 are shown separated from each other.

[0025] A first direction D1 from the first electrode 51 to the second electrode 52 is defined as a Z-axis direction. A direction perpendicular to the Z-axis direction is defined as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is defined as a Y-axis direction.

[0026] The first semiconductor component 11 is disposed between the first electrode 51 and the second electrode 52. The first semiconductor component 11 is of the first conductivity type.

[0027] The first semiconductor component 11 includes a first partial region 11a, a second partial region 11b, a third partial region 11c, a fourth partial region 11d, and a fifth partial region 11e. The second partial region 11b and the third partial region 11c are located between a portion of the first partial region 11a and the second electrode 52 in a first direction D1 from the first electrode 51 to the second electrode 52. A second direction D2 from the second partial region 11b to the third partial region 11c intersects the first direction D1. The second direction D2 may be, for example, the X-axis direction.

[0028] The fourth partial region 11d is located between a portion of the third partial region 11c and the second electrode 52 in the first direction D1. The fourth partial region 11d is in Schottky contact with the second electrode 52.

[0029] The fifth partial region 11e extends along the second direction D2. The fifth partial region 11e is connected to the second partial region 11b and the third partial region 11c. At least a portion of the fifth partial region 11e is located between the second partial region 11b and the third partial region 11c in the second direction D2.

[0030] In the first partial region 11 a , the second partial region 11 b , the third partial region 11 c , the fourth partial region 11 d , and the fifth partial region 11 e , the boundaries between each other may be clear or unclear.

[0031] The second semiconductor component 12 is of the second conductivity type. The first conductivity type is one of the n-type and the p-type. The second conductivity type is the other of the n-type and the p-type. Hereinafter, the first conductivity type is the n-type and the second conductivity type is the p-type.

[0032] The second semiconductor component 12 includes a first semiconductor region 12a, a second semiconductor region 12b, a third semiconductor region 12c, a fourth semiconductor region 12d, and a fifth semiconductor region 12e. The first semiconductor region 12a and the second semiconductor region 12b are located between the other part of the first partial region 11a and the second electrode 52 in the first direction D1. The first semiconductor region 12a and the second semiconductor region 12b are located between the second partial region 11b and the third partial region 11c in the second direction D2. A third direction D3 from the first semiconductor region 12a to the second semiconductor region 12b intersects a plane including the first direction D1 and the second direction D2. The third direction D3 may be, for example, the Y-axis direction.

[0033] The fifth partial region 11e is located between the first semiconductor region 12a and the second semiconductor region 12b in the third direction D3. The first semiconductor region 12a and the second semiconductor region 12b are divided by the fifth partial region 11e.

[0034] In the first semiconductor region 12 a , the second semiconductor region 12 b , the third semiconductor region 12 c , the fourth semiconductor region 12 d , and the fifth semiconductor region 12 e , the boundaries between them may be clear or unclear.

[0035] The third semiconductor region 12c is located between the first semiconductor region 12a and the second electrode 52 in the first direction D1. The fourth semiconductor region 12d is located between the second semiconductor region 12b and the second electrode 52 in the first direction D1. The fifth semiconductor region 12e is located between the fifth partial region 11e and the second electrode 52 in the first direction D1.

[0036] The third semiconductor component 13 is of the second conductivity type. A portion 13a of the third semiconductor component 13 is located between the third semiconductor region 12c and the second electrode 52. A portion 13a of the third semiconductor component 13 is electrically connected to the second electrode 52. The third impurity concentration of the second conductivity type in the third semiconductor component 13 is higher than the second impurity concentration of the second conductivity type in the second semiconductor component 12. For example, the second semiconductor component 12 is a p region. The third semiconductor component 13 is, for example, a p + area.

[0037] The fourth semiconductor component 14 is of the first conductivity type. A portion of the fourth semiconductor component 14 is located between the third semiconductor region 12c and the second electrode 52. A portion of the fourth semiconductor component 14 is electrically connected to the second electrode 52. The concentration of the first conductivity type fourth impurity in the fourth semiconductor component 14 is higher than the concentration of the first conductivity type first impurity in the first semiconductor component 11. For example, the first semiconductor component 11 is an n region. The fourth semiconductor component 14 is an n + area.

[0038] The direction from the second partial region 11b to at least a portion of the third electrode 53 is along the first direction D1. The first insulating component 41 includes a first insulating region 41a. The first insulating region 41a is provided between the second partial region 11b and at least a portion of the third electrode 53. The first insulating component 41 electrically insulates the second partial region 11b from the third electrode 53. A portion of the first insulating component 41 is provided between the fourth semiconductor component 14 and the third electrode 53. The first insulating component 41 electrically insulates the fourth semiconductor component 14 from the third electrode 53.

[0039] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be a potential based on the potential of the second electrode 52. The first electrode 51 functions as a drain electrode, for example. The second electrode 52 functions as a source electrode, for example. The third electrode 53 functions as a gate electrode, for example. The semiconductor device 110 is, for example, a transistor.

[0040] The second partial region 11b corresponds to, for example, a JFET (Junction Field Effect Transistor) region. The third partial region 11c functions as, for example, a layer for spreading current. The fourth partial region 11d functions as a part of a Schottky barrier diode (SBD). The region including the fourth semiconductor component 14 functions as a pn body diode.

[0041] In the semiconductor device 110 , by providing the SBD including the fourth partial region 11 d , when, for example, a reverse voltage is applied, current flows through the SBD, thereby making it difficult for the pn body diode to be turned on.

[0042] In the semiconductor device 110, a fifth partial region 11e is provided. Figure 1 As shown, when a reverse voltage is applied, part of the current i1 flowing in the fourth partial region 11d can flow to the second partial region 11b through the fifth partial region 11e. Thus, when a reverse voltage is applied, degradation of the semiconductor device due to hole injection is suppressed. According to the embodiment, the reverse conduction characteristic can be improved.

[0043] Consider a reference example in which the fifth partial region 11e is not provided. In the reference example, when a reverse voltage is applied, the current i1 flowing in the fourth partial region 11d is difficult to flow toward the second partial region 11b. In the reference example, the reverse conduction characteristic is insufficient.

[0044] In contrast, in the embodiment, a portion of the current i1 flowing in the fourth partial region 11d can flow to the second partial region 11b through the fifth partial region 11e. According to the embodiment, the reverse conduction characteristics can be improved. According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0045] In the semiconductor device 110 , a portion 13 a of the third semiconductor component 13 may be in ohmic contact with the second electrode 52 , for example.

[0046] like Figure 1 As shown, another portion 13b of the third semiconductor component 13 is located between the fourth semiconductor region 12d and the second electrode 52. The another portion 13b of the third semiconductor component 13 may be in ohmic contact with the second electrode 52.

[0047] like Figure 1 As shown, the semiconductor device 110 may include a first conductive layer 31. The first conductive layer 31 includes, for example, silicide. At least a portion of the first conductive layer 31 is disposed between the third semiconductor component 13 and the second electrode 52. The first conductive layer 31 includes, for example, NiSi. For example, a low-resistance electrical connection can be obtained.

[0048] like Figure 1 As shown, the second electrode 52 may include an opposing region 52p. The opposing region 52p is opposed to the fourth partial region 11d. The opposing region 52p, for example, includes at least one selected from the group consisting of Ni, Ti, V, and Mo. A Schottky junction is obtained in the portion including the opposing region 52p. In the second electrode 52, the entire lower surface including the opposing region 52p may include the above-mentioned material.

[0049] like Figure 1 As shown, the semiconductor device 110 may further include a fifth semiconductor component 15 of the first conductivity type. A portion of the fifth semiconductor component 15 is located between a portion 13a of the third semiconductor component 13 and the second electrode 52. A portion of the fifth semiconductor component 15 is electrically connected to the second electrode 52. The concentration of the first conductivity type fifth impurity in the fifth semiconductor component 15 is higher than the concentration of the fourth impurity. The fifth semiconductor component 15 is, for example, n ++ At least a portion of the first conductive layer 31 (eg, a silicide layer) may be disposed between the fifth semiconductor component 15 and the second electrode 52 .

[0050] like Figure 1 as well as Figure 2 As shown, the semiconductor device 110 may further include a sixth semiconductor component 16 of the first conductivity type. The sixth semiconductor component 16 is provided between the first electrode 51 and the first semiconductor component 11 in the first direction D1. The concentration of the first conductivity type sixth impurity in the sixth semiconductor component 16 is lower than the first impurity concentration. The sixth semiconductor component 16 is, for example, n - The sixth semiconductor component 16 is, for example, a drift layer.

[0051] The semiconductor device 110 may further include a seventh semiconductor component 17 of the first conductivity type. The seventh semiconductor component 17 is disposed between the first electrode 51 and the sixth semiconductor component 16 in the first direction D1. The concentration of the first conductivity type seventh impurity in the seventh semiconductor component 17 is higher than the first impurity concentration. The seventh semiconductor component 17 is, for example, n + area.

[0052] Figure 3 (a) is a cross-sectional view including the XY plane of the fourth semiconductor component 14 . Figure 3 (b) is a cross-sectional view including the XY plane of the fifth semiconductor component 15 . Figure 3 (c) is a cross-sectional view taken along the XY plane including the third semiconductor region 12c. Figure 3 (d) is a cross-sectional view taken along the XY plane including the fifth partial region 11 e .

[0053] like Figure 3 (c) and Figure 3 As shown in (d), the direction from the position of the fifth partial region 11e in the third direction D3 to the position of the fourth partial region 11d in the third direction D3 is along the second direction D2 (refer to Figure 1 ).like Figure 3 (c) and Figure 3 As shown in (d), for example, the position of the fifth partial region 11e in the third direction D3 coincides with the position of the fourth partial region 11d in the third direction D3.

[0054] like Figure 1 As shown, the first semiconductor component 11 may further include a sixth partial region 11f, a seventh partial region 11g, and an eighth partial region 11h. The sixth partial region 11f is located between another portion of the first partial region 11a and the second electrode 52 in the first direction D1. The second partial region 11b is located between the sixth partial region 11f and the third partial region 11c in the second direction D2. The sixth partial region 11f functions as a layer for spreading current, for example.

[0055] The seventh partial region 11g is located between a portion of the sixth partial region 11f and the second electrode 52 in the first direction D1. The seventh partial region 11g is in Schottky contact with the second electrode 52.

[0056] The eighth partial region 11h extends along the second direction D2. The eighth partial region 11h is connected to the sixth partial region 11f and the second partial region 11b. The eighth partial region 11h is provided, for example, between the sixth partial region 11f and the second partial region 11b.

[0057] The second semiconductor component 12 further includes a sixth semiconductor region 12f, a seventh semiconductor region 12g, an eighth semiconductor region 12h, a ninth semiconductor region 12i and a tenth semiconductor region 12j. The sixth semiconductor region 12f and the seventh semiconductor region 12g are located between another portion of the first partial region 11a and the second electrode 52 in the first direction D1.

[0058] The sixth semiconductor region 12f and the seventh semiconductor region 12g are located between the sixth partial region 11f and the second partial region 11b in the second direction D2. The direction from the sixth semiconductor region 12f to the seventh semiconductor region 12g is along the third direction D3.

[0059] The eighth partial region 11 h is located between the sixth semiconductor region 12 f and the seventh semiconductor region 12 g in the third direction D3 .

[0060] The eighth semiconductor region 12h is located between the sixth semiconductor region 12f and the second electrode 52 in the first direction D1. The ninth semiconductor region 12i is located between the seventh semiconductor region 12g and the second electrode 52 in the first direction D1. The tenth semiconductor region 12j is located between the eighth partial region 11h and the second electrode 52 in the first direction D1.

[0061] For example, the sixth semiconductor region 12f and the seventh semiconductor region 12g are separated by the eighth partial region 11h. When a reverse voltage is applied, a portion of the current flowing in the seventh partial region 11g can flow to the second partial region 11b through the eighth partial region 11h. Thus, when a reverse voltage is applied, degradation of the semiconductor device due to hole injection is suppressed. According to the embodiment, the reverse conduction characteristics can be improved.

[0062] like Figure 3 As shown in (d), in the example of the semiconductor device 110, the direction from the eighth partial region 11h to the fifth partial region 11e is along the second direction D2.

[0063] In this example, the direction from the seventh partial region 11g to the fourth partial region 11d is along the second direction D2. The direction from the position of the seventh partial region 11g in the third direction D3 to the position of the eighth partial region 11h in the third direction D3 is along the direction from the position of the fifth partial region 11e in the third direction D3 to the position of the fourth partial region 11d in the third direction.

[0064] like Figure 1 As shown, a portion 13c of the third semiconductor component 13 is located between the eighth semiconductor region 12h and the second electrode 52. The portion 13c of the third semiconductor component 13 is electrically connected to the second electrode 52. A portion 13d of the third semiconductor component 13 is located between the ninth semiconductor region 12i and the second electrode 52. The portion 13d of the third semiconductor component 13 is electrically connected to the second electrode 52.

[0065] Figure 4 It is a schematic plan view illustrating the semiconductor device according to the first embodiment.

[0066] like Figure 4 As shown, the semiconductor device 110 includes a first region r1 and a second region r2. The first region r1 is, for example, a region where the fourth partial region 11d or the seventh partial region 11g is provided. The first region r1 is, for example, a region where an SBD is provided. The second region r2 is, for example, a region where the third semiconductor component 13 is provided. The second region r2 is, for example, a region where an ohmic junction is provided. The second region r2 may include, for example, a region where the fourth semiconductor component 14 is provided. The second region r2 may include, for example, a region where the fifth semiconductor component 15 is provided.

[0067] In the semiconductor device 110 , the direction from the fifth partial region 11 e in the third direction D3 to the first region r1 in the third direction D3 is along the second direction D2 . The position of the fifth partial region 11 e in the third direction D3 coincides with the position of the first region r1 in the third direction D3 .

[0068] (Second Embodiment)

[0069] Figure 5 (a)~ Figure 5 (d) is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment.

[0070] like Figure 5 (c) and Figure 5 As shown in (d), in the semiconductor device 111 of the embodiment, the relative positional relationship between the eighth partial region 11h and the fifth partial region 11e is different from that in the semiconductor device 110. The structure of the semiconductor device 111 may be the same as that of the semiconductor device 110 except for this.

[0071] In the semiconductor device 111 , the direction from the eighth partial region 11 h to the fifth partial region 11 e intersects the second direction D2 . The eighth partial region 11 h is provided at a position offset from the fifth partial region 11 e .

[0072] In the semiconductor device 111, the reverse conduction characteristics can also be improved. In the semiconductor device 111, for example, the symmetry of the structure is good. As a result, for example, the current diffusion to the drift layer is easy to become uniform. For example, the on-resistance during forward conduction is low. For example, the short-circuit tolerance is good. For example, the resistance during reverse conduction is low.

[0073] (Third Embodiment)

[0074] Figure 6 is a schematic cross-sectional view illustrating a semiconductor device according to a third embodiment.

[0075] like Figure 6 As shown in FIG. 1 , in the semiconductor device 112 of the embodiment, the fifth partial region 11 e is offset from the first region r1 . The structure of the semiconductor device 112 other than this may be the same as that of the semiconductor device 110 .

[0076] In the semiconductor device 112, the direction from the position of the fifth partial region 11e in the third direction D3 to the position of the fourth partial region 11d in the third direction D3 intersects the second direction D2. For example, the position of the fifth partial region 11e in the third direction D3 is located between the position of a portion 13a of the third semiconductor component 13 in the third direction D3 and the position of the fourth partial region 11d in the third direction D3.

[0077] The reverse conduction characteristics can also be improved in the semiconductor device 112. In the semiconductor device 112, for example, the current (SBD current) passing through the fourth partial region 11d flows to the second partial region 11b through multiple paths. For example, in the second partial region 11b, the effect of suppressing the pn diode action is improved.

[0078] In the semiconductor device 112, the direction from the eighth partial region 11h to the fifth partial region 11e is along the second direction D2. The direction from the position of the seventh partial region 11g in the third direction D3 to the position of the eighth partial region 11h in the third direction D3 intersects the second direction D2. The direction from the position of the fifth partial region 11e in the third direction D3 to the position of the fourth partial region 11d in the third direction D3 intersects the second direction D2.

[0079] (Fourth Embodiment)

[0080] Figure 7is a schematic cross-sectional view illustrating a semiconductor device according to a fourth embodiment.

[0081] like Figure 7 As shown, in the semiconductor device 113 of the embodiment, the position of the eighth partial region 11h in the third direction D3 is offset from the position of the fifth partial region 11e in the third direction D3. The structure of the semiconductor device 113 may be the same as that of the semiconductor device 110 except for this.

[0082] In the semiconductor device 113, the direction from the eighth partial region 11h to the fifth partial region 11e intersects the second direction D2. The direction from the position of the seventh partial region 11g in the third direction D3 to the position of the eighth partial region 11h in the third direction D3 intersects the second direction D2. The direction from the position of the fifth partial region 11e in the third direction D3 to the position of the fourth partial region 11d in the third direction D3 intersects the second direction D2.

[0083] In the semiconductor device 113, the reverse conduction characteristics can also be improved. In the semiconductor device 113, for example, when a large reverse conduction current rushes in, the conductivity modulation of the pn diode is easily generated. As a result, the voltage drop during conduction is suppressed, and the surge current tolerance is ensured. For example, if the operation of the pn diode is suppressed by excessive SBD current, the surge tolerance may deteriorate. In the semiconductor device 113, the SBD effect is appropriately adjusted to obtain a well-balanced overall characteristic.

[0084] In an embodiment, for example, the first semiconductor component 11, the second semiconductor component 12, the third semiconductor component 13, and the fourth semiconductor component 14 include SiC. The first semiconductor component 11, the second semiconductor component 12, the third semiconductor component 13, and the fourth semiconductor component 14 may include at least one selected from the group consisting of 4H-SiC, 6H-SiC, and 3C-SiC. These semiconductor regions include crystals. These semiconductor components may include silicon. These semiconductor components may include a compound semiconductor containing Ga.

[0085] For example, the first conductivity type impurity includes at least one selected from the group consisting of N, P, and As. For example, the second conductivity type impurity includes at least one selected from the group consisting of B, Al, and Ga.

[0086] In one example, the concentration of the first conductivity type impurity in the first semiconductor component 11 is, for example, 1×10 16 cm -3 Above and 1×10 18 cm -3 In one example, the concentration of the second conductivity type impurity in the second semiconductor component 12 is, for example, 1×1017 cm -3 Above and 1×10 20 cm -3 In one example, the concentration of the second conductivity type impurity in the third semiconductor component 13 is, for example, 1×10 19 cm -3 Above and 1×10 21 cm -3 In one example, the concentration of the first conductivity type impurity in the fourth semiconductor component 14 is, for example, 1×10 19 cm -3 Above and 1×10 21 cm -3 In one example, the concentration of the first conductivity type impurity in the fifth semiconductor component 15 is, for example, 1×10 19 cm -3 Above and 1×10 21 cm -3 In one example, the concentration of the first conductivity type impurity in the sixth semiconductor component 16 is, for example, 1×10 14 cm -3 Above and 1×10 17 cm -3 In one example, the concentration of the first conductivity type impurity in the seventh semiconductor component 17 is, for example, 1×10 15 cm -3 Above and 1×10 18 cm -3 The above impurity concentration may correspond to, for example, the carrier concentration.

[0087] In the embodiment, information on the length and thickness is obtained by electron microscope observation, etc. Information on the composition of the material is obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy), etc.

[0088] The implementation method may include the following technical solutions:

[0089] (Technical Solution 1)

[0090] A semiconductor device comprising:

[0091] a first electrode;

[0092] a second electrode; and

[0093] A first semiconductor component of a first conductivity type is disposed between the first electrode and the second electrode, the first semiconductor component comprises a first partial region, a second partial region, a third partial region, a fourth partial region and a fifth partial region, the second partial region and the third partial region are located between a portion of the first partial region and the second electrode in a first direction from the first electrode to the second electrode, a second direction from the second partial region to the third partial region intersects the first direction, the fourth partial region is located between a portion of the third partial region and the second electrode in the first direction, the fourth partial region is in Schottky contact with the second electrode, the fifth partial region extends along the second direction, and the fifth partial region is connected to the second partial region and the third partial region;

[0094] a second semiconductor component of a second conductivity type, the second semiconductor component comprising a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region and a fifth semiconductor region, the first semiconductor region and the second semiconductor region being located between another portion of the first partial region and the second electrode in the first direction, the first semiconductor region and the second semiconductor region being located between the second partial region and the third partial region in the second direction, the third direction from the first semiconductor region to the second semiconductor region intersecting a plane including the first direction and the second direction; the fifth partial region being located between the first semiconductor region and the second semiconductor region in the third direction, the third semiconductor region being located between the first semiconductor region and the second electrode in the first direction, the fourth semiconductor region being located between the second semiconductor region and the second electrode in the first direction, and the fifth semiconductor region being located between the fifth partial region and the second electrode in the first direction;

[0095] a third semiconductor component of the second conductivity type, a portion of the third semiconductor component being located between the third semiconductor region and the second electrode and electrically connected to the second electrode, a third impurity concentration of the second conductivity type in the third semiconductor component being higher than a second impurity concentration of the second conductivity type in the second semiconductor component;

[0096] a fourth semiconductor component of the first conductivity type, wherein a portion of the fourth semiconductor component is located between the third semiconductor region and the second electrode and is electrically connected to the second electrode, and a fourth impurity concentration of the first conductivity type in the fourth semiconductor component is higher than a first impurity concentration of the first conductivity type in the first semiconductor component;

[0097] a third electrode, a direction from the second partial region to at least a portion of the third electrode is along the first direction; and

[0098] A first insulating member includes a first insulating region disposed between the second partial region and the at least a portion of the third electrode.

[0099] (Technical Solution 2)

[0100] The semiconductor device according to claim 1, wherein the portion of the third semiconductor component is in ohmic contact with the second electrode.

[0101] (Technical Solution 3)

[0102] The semiconductor device according to Technical Solution 1 or 2, wherein another portion of the third semiconductor component is located between the fourth semiconductor region and the second electrode and is in ohmic contact with the second electrode.

[0103] (Technical Solution 4)

[0104] A semiconductor device according to any one of technical solutions 1 to 3, wherein:

[0105] further comprising a fifth semiconductor component of the first conductivity type,

[0106] A portion of the fifth semiconductor component is located between the portion of the third semiconductor component and the second electrode and is electrically connected to the second electrode. A fifth impurity concentration of the first conductivity type in the fifth semiconductor component is higher than a fourth impurity concentration.

[0107] (Technical Solution 5)

[0108] A semiconductor device according to any one of technical solutions 1 to 4, wherein a direction from the position of the fifth partial region in the third direction to the position of the fourth partial region in the third direction is along the second direction.

[0109] (Technical Solution 6)

[0110] A semiconductor device according to any one of technical solutions 1 to 4, wherein a position of the fifth partial region in the third direction is consistent with a position of the fourth partial region in the third direction.

[0111] (Technical Solution 7)

[0112] A semiconductor device according to any one of technical solutions 1 to 4, wherein a direction from the position of the fifth partial region in the third direction to the position of the fourth partial region in the third direction intersects with the second direction.

[0113] (Technical Solution 8)

[0114] A semiconductor device according to any one of technical solutions 1 to 4, wherein the position of the fifth partial region in the third direction is located between the position of the portion of the third semiconductor component in the third direction and the position of the fourth partial region in the third direction.

[0115] (Technical Solution 9)

[0116] A semiconductor device according to any one of technical solutions 1 to 4, wherein:

[0117] The first semiconductor component further includes a sixth partial region, a seventh partial region and an eighth partial region,

[0118] The sixth partial region is located between another part of the first partial region and the second electrode in the first direction,

[0119] The second partial area is located between the sixth partial area and the third partial area in the second direction,

[0120] The seventh partial region is located between a portion of the sixth partial region and the second electrode in the first direction,

[0121] The seventh portion of the area is in Schottky contact with the second electrode,

[0122] The eighth partial area extends along the second direction, and the eighth partial area is connected to the sixth partial area and the second partial area.

[0123] The second semiconductor component further includes a sixth semiconductor region, a seventh semiconductor region, an eighth semiconductor region, a ninth semiconductor region and a tenth semiconductor region,

[0124] The sixth semiconductor region and the seventh semiconductor region are located between another portion of the first partial region and the second electrode in the first direction.

[0125] The sixth semiconductor region and the seventh semiconductor region are located between the sixth partial region and the second partial region in the second direction,

[0126] A direction from the sixth semiconductor region to the seventh semiconductor region is along the third direction,

[0127] The eighth partial region is located between the sixth semiconductor region and the seventh semiconductor region in the third direction,

[0128] The eighth semiconductor region is located between the sixth semiconductor region and the second electrode in the first direction,

[0129] The ninth semiconductor region is located between the seventh semiconductor region and the second electrode in the first direction,

[0130] The tenth semiconductor region is located between the eighth partial region and the second electrode in the first direction.

[0131] (Technical Solution 10)

[0132] The semiconductor device according to Technical Solution 9, wherein a direction from the eighth partial region to the fifth partial region is along the second direction.

[0133] (Technical Solution 11)

[0134] The semiconductor device according to technical solution 9, wherein:

[0135] From the seventh partial area to the fourth partial area along the second direction,

[0136] The direction from the position of the seventh partial region in the third direction to the position of the eighth partial region in the third direction is along the direction from the position of the fifth partial region in the third direction to the position of the fourth partial region in the third direction.

[0137] (Technical Solution 12)

[0138] The semiconductor device according to claim 9, wherein a direction from the eighth partial region to the fifth partial region intersects with the second direction.

[0139] (Technical Solution 13)

[0140] The semiconductor device according to technical solution 9, wherein:

[0141] From the eighth partial area to the fifth partial area along the second direction,

[0142] The direction from the position of the seventh partial area in the third direction to the position of the eighth partial area in the third direction intersects the second direction.

[0143] The direction from the position of the fifth partial region in the third direction to the position of the fourth partial region in the third direction intersects with the second direction.

[0144] (Technical Solution 14)

[0145] The semiconductor device according to technical solution 9, wherein:

[0146] The direction from the eighth partial area to the fifth partial area intersects with the second direction,

[0147] The direction from the position of the seventh partial area in the third direction to the position of the eighth partial area in the third direction intersects the second direction.

[0148] The direction from the position of the fifth partial region in the third direction to the position of the fourth partial region in the third direction intersects with the second direction.

[0149] (Technical Solution 15)

[0150] A semiconductor device according to any one of technical solutions 1 to 14, wherein:

[0151] further comprising a sixth semiconductor component of the first conductivity type,

[0152] The sixth semiconductor component is disposed between the first electrode and the first semiconductor component in the first direction,

[0153] A sixth impurity concentration of the first conductivity type in the sixth semiconductor component is lower than the first impurity concentration.

[0154] (Technical Solution 16)

[0155] The semiconductor device according to technical solution 15, wherein:

[0156] further comprising a seventh semiconductor component of the first conductivity type,

[0157] The seventh semiconductor component is disposed between the first electrode and the sixth semiconductor component in the first direction,

[0158] A seventh impurity concentration of the first conductivity type in the seventh semiconductor component is higher than the first impurity concentration.

[0159] (Technical Solution 17)

[0160] A semiconductor device according to any one of technical solutions 1 to 16, wherein:

[0161] further comprising a first conductive layer including silicide,

[0162] At least a portion of the first conductive layer is disposed between the third semiconductor component and the second electrode.

[0163] (Technical Solution 18)

[0164] A semiconductor device according to any one of technical solutions 1 to 17, wherein:

[0165] The second electrode includes an opposing region opposing the fourth partial region,

[0166] The facing region includes at least one selected from the group consisting of Ni, Ti, V, and Mo.

[0167] (Technical Solution 19)

[0168] The semiconductor device according to any one of technical solutions 1 to 18, wherein the first semiconductor component, the second semiconductor component, the third semiconductor component and the fourth semiconductor component include SiC.

[0169] (Technical Solution 20)

[0170] A semiconductor device according to any one of technical solutions 1 to 19, wherein a portion of the first insulating component is provided between the fourth semiconductor component and the third electrode.

[0171] According to the embodiment, a semiconductor device having improved characteristics can be provided.

[0172] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, as long as a person skilled in the art can implement the present invention in the same manner and obtain the same effect by appropriately selecting from the known range, the specific configuration of each element such as an electrode, a semiconductor component, and an insulating component contained in a semiconductor device is included in the scope of the present invention.

[0173] Furthermore, embodiments in which two or more elements of the specific examples are combined within a technically possible range are also included in the scope of the present invention as long as they include the gist of the present invention.

[0174] Furthermore, as embodiments of the present invention, all semiconductor devices that can be appropriately designed and modified by a person skilled in the art based on the above-described semiconductor device also belong to the scope of the present invention as long as they include the gist of the present invention.

[0175] Furthermore, within the scope of the concept of the present invention, a person skilled in the art can conceive of various changes and modifications, and these changes and modifications also belong to the scope of the present invention.

[0176] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope or subject matter of the invention, and are included in the invention described in the claims and the scope of their equivalents.

[0177] [Explanation of Reference Numerals]

[0178] 11-17: The first to seventh semiconductor components,

[0179] 11a~11h: The first to eighth parts of the area,

[0180] 12a to 12j: first to tenth semiconductor regions,

[0181] 13a~13d: Part,

[0182] 31: first conductive layer,

[0183] 41: first insulating member,

[0184] 41a: first insulating region,

[0185] 51-53: first to third electrodes,

[0186] 52p: Opposite area,

[0187] 110~113:Semiconductor devices,

[0188] D1~D3: First~Third Direction,

[0189] r1, r2: first and second regions.

Claims

1. A semiconductor device comprising: a first electrode; a second electrode; as well as A first semiconductor component of a first conductivity type is disposed between the first electrode and the second electrode, the first semiconductor component comprises a first partial region, a second partial region, a third partial region, a fourth partial region and a fifth partial region, the second partial region and the third partial region are located between a portion of the first partial region and the second electrode in a first direction from the first electrode to the second electrode, a second direction from the second partial region to the third partial region intersects the first direction, the fourth partial region is located between a portion of the third partial region and the second electrode in the first direction, the fourth partial region is in Schottky contact with the second electrode, the fifth partial region extends along the second direction, and the fifth partial region is connected to the second partial region and the third partial region; a second semiconductor component of a second conductivity type, the second semiconductor component comprising a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region and a fifth semiconductor region, the first semiconductor region and the second semiconductor region being located between another portion of the first partial region and the second electrode in the first direction, the first semiconductor region and the second semiconductor region being located between the second partial region and the third partial region in the second direction, the third direction from the first semiconductor region to the second semiconductor region intersecting a plane including the first direction and the second direction; the fifth partial region being located between the first semiconductor region and the second semiconductor region in the third direction, the third semiconductor region being located between the first semiconductor region and the second electrode in the first direction, the fourth semiconductor region being located between the second semiconductor region and the second electrode in the first direction, and the fifth semiconductor region being located between the fifth partial region and the second electrode in the first direction; a third semiconductor component of the second conductivity type, a portion of the third semiconductor component being located between the third semiconductor region and the second electrode and electrically connected to the second electrode, a third impurity concentration of the second conductivity type in the third semiconductor component being higher than a second impurity concentration of the second conductivity type in the second semiconductor component; a fourth semiconductor component of the first conductivity type, wherein a portion of the fourth semiconductor component is located between the third semiconductor region and the second electrode and is electrically connected to the second electrode, and a fourth impurity concentration of the first conductivity type in the fourth semiconductor component is higher than a first impurity concentration of the first conductivity type in the first semiconductor component; a third electrode, a direction from the second partial region to at least a portion of the third electrode along the first direction; as well as A first insulating member includes a first insulating region disposed between the second partial region and the at least a portion of the third electrode.

2. The semiconductor device according to claim 1, wherein further comprising a fifth semiconductor component of the first conductivity type, A portion of the fifth semiconductor component is located between the portion of the third semiconductor component and the second electrode and is electrically connected to the second electrode. A fifth impurity concentration of the first conductivity type in the fifth semiconductor component is higher than a fourth impurity concentration.

3. The semiconductor device according to claim 1, wherein A direction from the position of the fifth partial region in the third direction to the position of the fourth partial region in the third direction is along the second direction.

4. The semiconductor device according to claim 1, wherein The direction from the position of the fifth partial region in the third direction to the position of the fourth partial region in the third direction is orthogonal to the second direction.

5. The semiconductor device according to claim 1, wherein The position of the fifth partial region in the third direction is located between the position of the portion of the third semiconductor component in the third direction and the position of the fourth partial region in the third direction.

6. The semiconductor device according to claim 1 or 2, wherein: The first semiconductor component further includes a sixth partial region, a seventh partial region and an eighth partial region, The sixth partial region is located between another part of the first partial region and the second electrode in the first direction, The second partial area is located between the sixth partial area and the third partial area in the second direction, The seventh partial region is located between a portion of the sixth partial region and the second electrode in the first direction, The seventh portion of the area is in Schottky contact with the second electrode, The eighth partial area extends along the second direction, and the eighth partial area is connected to the sixth partial area and the second partial area. The second semiconductor component further includes a sixth semiconductor region, a seventh semiconductor region, an eighth semiconductor region, a ninth semiconductor region and a tenth semiconductor region, The sixth semiconductor region and the seventh semiconductor region are located between another portion of the first partial region and the second electrode in the first direction. The sixth semiconductor region and the seventh semiconductor region are located between the sixth partial region and the second partial region in the second direction, A direction from the sixth semiconductor region to the seventh semiconductor region is along the third direction, The eighth partial region is located between the sixth semiconductor region and the seventh semiconductor region in the third direction, The eighth semiconductor region is located between the sixth semiconductor region and the second electrode in the first direction, The ninth semiconductor region is located between the seventh semiconductor region and the second electrode in the first direction, The tenth semiconductor region is located between the eighth partial region and the second electrode in the first direction.

7. The semiconductor device according to claim 6, wherein: A direction from the eighth partial region to the fifth partial region is along the second direction.

8. The semiconductor device according to claim 6, wherein: A direction from the eighth partial region to the fifth partial region intersects with the second direction.

9. The semiconductor device according to claim 6, wherein: From the eighth partial area to the fifth partial area along the second direction, The direction from the position of the seventh partial area in the third direction to the position of the eighth partial area in the third direction intersects the second direction. The direction from the position of the fifth partial region in the third direction to the position of the fourth partial region in the third direction intersects with the second direction.

10. The semiconductor device according to claim 6, wherein The direction from the eighth partial area to the fifth partial area intersects with the second direction, The direction from the position of the seventh partial area in the third direction to the position of the eighth partial area in the third direction intersects the second direction. The direction from the position of the fifth partial region in the third direction to the position of the fourth partial region in the third direction intersects with the second direction.

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