Precursor composition for improving electrical properties of metal film, metal film and method

Abstract

The invention discloses a precursor composition for improving electrical properties of a metal film, the metal film and a method. The precursor composition comprises a precursor with a first concentration, a dopant with a second concentration and a solvent with a third concentration. The doping agent is added into the precursor, so that the electrical property of the metal film obtained through deposition can be remarkably improved, the capacitance density is increased by 9%, and the dielectric constant is increased by 5%.

Description

Technical Field

[0001] The present application belongs to the technical field of metal film precursors, and specifically relates to a precursor composition, a metal film and a method for improving the electrical properties of a metal film. Background Art

[0002] Metal precursor compounds are key materials in thin film deposition processes and are mainly used in semiconductor storage, capacitor electrodes in logic chips, gate transition layers, isolation materials, and phase change materials in phase change memories.

[0003] As precursors for atomic layer deposition (ALD) or chemical vapor deposition (CVD) engineering, various forms of organic metal compounds have been developed and used. In order to meet the demand for high dielectric constants of metal films in some scenarios, materials based on Group IVB such as TiO2, ZrO2, HfO2, etc. are widely used. However, the metal precursors of Group IVB are currently used for the preparation of single pure oxide films. The dielectric properties and leakage current characteristics of single metal precursor films still need to be improved to obtain better electrical performance. Summary of the invention

[0004] The purpose of the present application is to provide a precursor composition, a metal film and a method for improving the electrical properties of a metal film, so as to solve the technical problem that the metal precursors of the IVB group materials in the prior art are all used for the preparation of a single pure oxide film, and the dielectric properties and leakage current characteristics of the single metal precursor film still need to be improved.

[0005] In order to achieve the above-mentioned object, the present application provides a precursor composition for improving the electrical properties of a metal film in a first aspect. 1) A precursor containing a first concentration is selected from one or more combinations of the following formula 1, formula 2, formula 3, formula 4 and formula 5; [General formula 1] ; [Formula 2] ; [General formula 3] ; [Formula 4] ; [Formula 5] ; 2) containing a dopant of a second concentration, selected from one or a combination of the following general formula 6 and general formula 7; [General formula 6] ; [Formula 7] ; 3) containing a solvent of a third concentration, wherein the solvent is one or more combinations of organic compounds selected from the group consisting of C1-C16 saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, and phosphines; In the general formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn; R1 to R5 are each independently selected from the following groups: H, C1 to C6 groups; R6 to R8 are each independently selected from the following groups: C1 to C6 groups; R9 to R 11 Each is independently selected from the following groups: H, C1 to C6 groups; m, n, k are each independently selected from: 1, 2, 3; L1 to L4 are each independently selected from -1-valent anionic ligands composed of one or more of the following groups: NR'2, OR', R'Cp, amidine, β-diketone and ketimine, R' is H or a C1 to C6 group, and adjacent R' may be joined to form a hydrocarbon ring; Among them, the C1 to C6 groups are straight-chain, branched or cyclic groups, the C1 to C6 groups are saturated, monounsaturated or polyunsaturated groups, and the C1 to C6 groups are optionally substituted with 0, 1 or more fluorine atoms; in the solute of the composition, the mass fraction of the precursor at the first concentration is greater than or equal to 90%, the mass fraction of the dopant at the second concentration is less than or equal to 10%, and the concentration of the dopant at the second concentration is greater than or equal to 1 ppt; the mass fraction of the solvent at the third concentration is 0~50%.

[0006] In order to achieve the above-mentioned object, the second aspect of the present application provides a method for improving the electrical properties of a metal film, characterized by comprising: A precursor having a first concentration, a dopant having a second concentration, and a solvent having a third concentration are mixed to obtain a composition, and the composition is vaporized to form a vapor-phase metal source; Introducing the gas phase metal source into a reaction chamber equipped with a substrate, and supplying a reactive gas or a plasma of a reactive gas into the reaction chamber to deposit a metal film on the substrate; Wherein, the composition comprises: 1) A precursor of a first concentration is selected from one or more combinations of the following formula 1, formula 2, formula 3, formula 4 and formula 5; [General formula 1] ; [Formula 2] ; [General formula 3] ; [Formula 4] ; [Formula 5] ; 2) a dopant of a second concentration, selected from one or a combination of the following general formula 6 and general formula 7; [General formula 6] ; [Formula 7] ; 3) a solvent of a third concentration, wherein the solvent is one or more combinations of organic compounds selected from the group consisting of C1-C16 saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, and phosphines; In the general formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn; R1 to R5 are each independently selected from the following groups: H, C1 to C6 groups; R6 to R8 are each independently selected from the following groups: C1 to C6 groups; R9 to R 11 Each is independently selected from the following groups: H, C1 to C6 groups; m, n, k are each independently selected from: 1, 2, 3; L1 to L4 are each independently selected from -1-valent anionic ligands composed of one or more of the following groups: NR'2, OR', R'Cp, amidine, β-diketone and ketimine, R' is H or a C1 to C6 group, and adjacent R' may be joined to form a hydrocarbon ring; Among them, the C1 to C6 groups are straight-chain, branched or cyclic groups, the C1 to C6 groups are saturated, monounsaturated or polyunsaturated groups, and the C1 to C6 groups are optionally substituted with 0, 1 or more fluorine atoms; in the solute of the composition, the mass fraction of the precursor at the first concentration is greater than or equal to 90%, the mass fraction of the dopant at the second concentration is less than or equal to 10%, and the concentration of the dopant at the second concentration is greater than or equal to 1 ppt; the mass fraction of the solvent at the third concentration is 0~50%.

[0007] In one or more embodiments, the co-gasification is specifically heating the composition at 50-120°C.

[0008] In one or more embodiments, the reactive gas comprises one or more combinations of oxygen, ozone, water vapor, hydrogen peroxide, hydrogen, ammonia, nitric oxide, nitrous oxide, nitrogen dioxide, and hydrazine, and the plasma is radio frequency plasma, direct current plasma, or remote plasma.

[0009] In one or more embodiments, in the step of depositing a metal film on the substrate, the temperature in the reaction chamber is 100-380°C.

[0010] In order to achieve the above object, the third aspect of the present application provides a metal film, which is prepared by the method for improving the electrical properties of the metal film described in any of the above embodiments, and the metal film includes a compound of the following formula: (A （a） O b B （1-a） )N c C d ; Wherein, 0<a≤1, 0≤b<3, 0≤c<2, 0≤d<1; A is the metal element of the precursor at the first concentration, and A is selected from one or more combinations of M1, M3, M4 and M5; B is the metal element of the second concentration of the dopant, and B is selected from M2.

[0011] Different from the prior art, the beneficial effects of this application are: The method of the present application can significantly improve the electrical properties of the deposited metal film by adding a dopant to the precursor; The composition of the present application includes a dopant and a precursor that are mixed with each other. The two components do not react with each other and can remain stable and mix with each other in a liquid state, which can effectively improve the electrical properties of the film; The metal film of the present application has better electrical properties than the metal film prepared by conventional single precursor deposition, among which the capacitance density is increased by 9% and the dielectric constant is increased by 5%. The prepared metal film can significantly improve the device performance when applied to transistor gate dielectric layers, metal gate electrodes, organic light-emitting display coatings, copper interconnect diffusion barriers, DRAM dielectric layers, microfluidic and microelectronic coatings, sensors and other fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0013] Figure 1 It is a flow chart of an implementation method of the present application for improving the electrical properties of a metal film. DETAILED DESCRIPTION

[0014] In order to enable those skilled in the art to better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work should fall within the scope of protection of the present application.

[0015] Group IVB metals include titanium (Ti), zirconium (Zr) and hafnium (Hf). They are transition metals with active chemical properties and can form compounds with a variety of non-metallic elements.

[0016] In the field of functional material preparation, especially chip manufacturing methods, Group IVB metal oxides, such as titanium oxide (TiO2), zirconium oxide (ZrO2), hafnium oxide (HfO2) and rare earth oxides, are widely used as iterative materials of SiO2 in the manufacture of semiconductor materials with large-scale integration or high-capacity storage due to their high dielectric constant (high-K) properties. Therefore, it is crucial to select precursor materials suitable for forming this type of metal oxide or nitride film. When using thin film preparation processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), metal precursor compounds need to have high vapor pressure, thermal stability and chemical stability, low toxicity and other requirements.

[0017] Currently, the IVB group metal precursors commonly used in MOCVD and ALD processes all utilize a single IVB group metal precursor and a reactive gas to react and deposit a single pure oxide film. The research and development and application of mixed oxides, stacked oxides, and doped oxide films are very promising, so the development of metal precursor compositions is of great significance for the realization of the above functional films.

[0018] The applicant has developed a method for significantly improving the dielectric constant and capacitance density of thin films by precursor doping for application scenarios that require high dielectric constant and high capacitance density. This method adds dopants to conventional Group IVB metal precursors to help improve the dielectric constant and capacitance density of the film.

[0019] Specifically, see Figure 1 , Figure 1 It is a flow chart of an implementation method of the present application for improving the electrical properties of a metal film.

[0020] like Figure 1 As shown, the method includes: S100, mixing a precursor of a first concentration, a dopant of a second concentration, and a solvent of a third concentration to obtain a composition, and vaporizing the mixture to form a gas-phase metal source.

[0021] First, in the method of this embodiment, a dopant of a second concentration is added to a precursor of a first concentration. The dopant can be selected from one or a combination of two of the following general formulas 6 and 7.

[0022] [General formula 6] ; [Formula 7] ; In one embodiment, the precursor of the first concentration may be selected from one or more combinations of the following Formula 1, Formula 2, Formula 3, Formula 4 and Formula 5.

[0023] [General formula 1] ; [Formula 2] ; [General formula 3] ; [Formula 4] ; [Formula 5] ; In the general formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn; R1 to R5 are each independently selected from the following groups: H, C1 to C6 groups; R6 to R8 are each independently selected from the following groups: C1 to C6 groups; R9 to R 11 Each is independently selected from the following groups: H, C1 to C6 groups; m, n, k are each independently selected from: 1, 2, 3; L1 to L4 are each independently selected from a -1-valent anionic ligand consisting of one or more of the following groups: NR'2, OR', R'Cp, amidine, β-diketone and ketimine, R' is H or a C1 to C6 group, and adjacent R's may be joined to form a hydrocarbon ring.

[0024] Among them, the C1 to C6 groups are straight-chain, branched or cyclic groups, the C1 to C6 groups are saturated, monounsaturated or polyunsaturated groups, and the C1 to C6 groups are optionally substituted with 0, 1 or more fluorine atoms.

[0025] In one embodiment, in the solute of the composition, the mass fraction of the precursor at the first concentration may be greater than or equal to 90%, the mass fraction of the dopant at the second concentration may be less than or equal to 10%, and the concentration of the dopant at the second concentration may be greater than or equal to 1 ppt.

[0026] In one embodiment, the mass fraction of the solvent in the third concentration in the composition can be 0-50%; the solvent can be one or more combinations of C1-C16 saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, and phosphine organic compounds.

[0027] The dopant of the second concentration and the precursor of the first concentration are mixed and then vaporized, so that the two can be vaporized together to form a gas metal source for deposition to prepare a doped oxide film.

[0028] In one embodiment, the gasification may be specifically heating the composition at 50-120°C.

[0029] S200, introducing a gas phase metal source into a reaction chamber equipped with a substrate, and supplying a reactive gas or a plasma of a reactive gas into the reaction chamber to deposit a metal film on the substrate.

[0030] A gas phase metal source and a reactive gas are introduced into a reaction chamber to cause a reaction, and a metal film obtained by the reaction is deposited on a substrate.

[0031] In one embodiment, when the reactive gas is supplied directly into the reaction chamber, the reactive gas may include one or more combinations of oxygen, ozone, water vapor, hydrogen peroxide, hydrogen, ammonia, nitric oxide, nitrous oxide, nitrogen dioxide, and hydrazine.

[0032] In another embodiment, when plasma of reactive gas is supplied into the reaction chamber, the plasma may be radio frequency plasma, direct current plasma or remote plasma of the above-mentioned reactive gases, all of which can achieve the effect of this embodiment.

[0033] In one embodiment, during the reaction, the temperature in the reaction chamber may be 100-380° C., so that the reaction continues to generate oxides.

[0034] This application adds a dopant of a specific structure to the precursor, and the experimental results show that the electrical properties of the film can be significantly improved. This may be due to the change of the carbon chain of the functional group of the ligand molecule compared to before doping. According to literature reports, the difference in the molecular structure of the precursor ligand is closely related to the electrical properties of the film formed. The carbon chain of the functional group of the ligand molecule is different. Under the same film deposition conditions, the thickness and crystal structure of the film formed will have certain differences, which will directly affect the electrical properties of the film such as capacitance density, dielectric constant and leakage rate.

[0035] The present application also provides a precursor composition for improving the electrical properties of metal films. The precursor composition can be applied to CVD or ALD processes as a precursor and a reactive gas to react and deposit metal oxide films. Compared with traditional single-component precursors, the composition can significantly improve the dielectric constant and capacitance density of the film, thereby improving the electrical properties of the film.

[0036] Specifically, the composition comprises: 1) A precursor of a first concentration is selected from one or more combinations of the following formula 1, formula 2, formula 3, formula 4 and formula 5; [General formula 1] ; [Formula 2] ; [General formula 3] ; [Formula 4] ; [Formula 5] ; 2) a dopant of a second concentration, selected from one or a combination of the following general formula 6 and general formula 7; [General formula 6] ; [Formula 7] ; 3) a third concentration of solvent; In the general formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn; R1 to R5 are each independently selected from the following groups: H, C1 to C6 groups; R6 to R8 are each independently selected from the following groups: C1 to C6 groups; R9 to R 11 Each is independently selected from the following groups: H, C1 to C6 groups; m, n, k are each independently selected from: 1, 2, 3; L1 to L4 are each independently selected from -1-valent anionic ligands composed of one or more of the following groups: NR'2, OR', R'Cp, amidine, β-diketone and ketimine, R' is H or a C1 to C6 group, and adjacent R' may be joined to form a hydrocarbon ring; Wherein, the C1 to C6 groups are linear, branched or cyclic groups, the C1 to C6 groups are saturated, monounsaturated or polyunsaturated groups, and the C1 to C6 groups are optionally substituted with 0, 1 or more fluorine atoms. In one embodiment, in the solute of the composition, the mass fraction of the precursor at the first concentration may be greater than or equal to 90%, the mass fraction of the dopant at the second concentration may be less than or equal to 10%, and the concentration of the dopant at the second concentration may be greater than or equal to 1 ppt.

[0037] In one embodiment, the mass fraction of the solvent of the third concentration can be 0-50%, and the solvent can be one or more combinations of C1-C16 saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, and phosphine organic compounds, all of which can achieve the effect of this embodiment.

[0038] In the composition of the present application, the precursor and the dopant in any of the above embodiments do not react with each other in a liquid state and can exist in a stable and uniformly mixed state.

[0039] In one embodiment, the second concentration of dopant may be selected from the following compounds, but is not limited thereto: ; In one embodiment, the precursor of the first concentration may be selected from the following compounds, but is not limited thereto: .

[0040] The present application also provides a metal film, wherein the metal film is deposited by using the precursor composition of any of the above embodiments as a precursor through a CVD or ALD process, and the metal film comprises a compound of the following formula: (A （a） O b B （1-a） )N c C d ; Wherein, 0<a≤1, 0≤b<3, 0≤c<2, 0≤d<1; A is a metal element of the precursor at a first concentration, and A is selected from one or more combinations of M1, M3, M4 and M5; B is a metal element of a dopant at a second concentration, and B is selected from M2.

[0041] Compared with metal films prepared from traditional single-component precursors, this metal film has a higher dielectric constant and capacitance density and has better electrical properties.

[0042] The effects of the technical solution of the present application are further described in detail below in conjunction with the examples. The preparation methods of the dopants of the precursor compositions in the following examples can be found in the related patents on Group IVB metal compounds previously applied by the applicant (CN118388553A, CN118388554A), which will not be described in detail here.

[0043] Embodiment 1: A metal film is prepared by the following method: Step 1: Add dopant and the precursor CpZr[NMe2]3 in a weight ratio of 1:9 to obtain a precursor composition; the precursor composition is mixed with n-octane in a weight ratio of 4:1, and then transferred into a steel cylinder; Step 3: Transfer the cleaned substrate into a reaction chamber of an atomic layer deposition device, and heat the substrate to a temperature of 225° C. in an argon atmosphere of 0.94 Torr; Step 4: heating the precursor composition solution to 60° C. to form a vapor-phase metal source, and then delivering the vapor-phase metal source into the reaction chamber through an argon delivery device, pulsing for 1 second, and purging with argon for 10 seconds; Step 5: ozone was introduced into the reaction chamber at a concentration of 0.5 vol% relative to argon, pulsed for 0.075 seconds, and purged with argon for 10 seconds; Step 6: Repeat steps 4 and 5 to continuously deposit a ZrON film of a specified thickness on the substrate.

[0044] Embodiment 2: A metal film, the preparation method is basically the same as that of Embodiment 1, except that: The precursor composition is composed of a dopant and the precursor CpTi[NMe2]3 are uniformly mixed in a weight ratio of 1:19 to obtain; the precursor composition is mixed with n-octane in a weight ratio of 1:1, and then transferred into a steel bottle; The heating temperature of the precursor composition solution was 100°C.

[0045] Embodiment 3: A metal film, the preparation method is basically the same as that of Embodiment 1, except that: The precursor composition is composed of a dopant The precursor CpHf[NMe2]3 is uniformly mixed in a weight ratio of 1:9.

[0046] Embodiment 4: A metal film, the preparation method is basically the same as that of Example 1, except that: The precursor composition is composed of a dopant The precursor CpZr[NMe2]3 is uniformly mixed in a weight ratio of 1:9.

[0047] Embodiment 5: A metal film, the preparation method is basically the same as that of Embodiment 1, except that: The precursor composition is composed of a dopant The precursor CpZr[NMe2]3 is uniformly mixed in a weight ratio of 1:9.

[0048] Embodiment 6: A metal film, the preparation method is basically the same as that of Embodiment 1, except that: The precursor composition is composed of a dopant The precursor CpZr[NMe2]3 is uniformly mixed in a weight ratio of 1:9.

[0049] Embodiment 7: A metal film, the preparation method is basically the same as that of Example 1, except that: The precursor composition is composed of a dopant The precursor CpZr[NMe2]3 is uniformly mixed in a weight ratio of 1:9.

[0050] Embodiment 8: A metal film, the preparation method is basically the same as that of Example 1, except that: The precursor composition is composed of a dopant The precursor CpZr[NMe2]3 is uniformly mixed in a weight ratio of 1:9.

[0051] Embodiment 9: A metal film, the preparation method is basically the same as that of Example 1, except that: Precursor composition dopant and the precursor ((EtCp)2Mg) in a weight ratio of 1:9.

[0052] Embodiment 10: A metal film, the preparation method is basically the same as that of Example 1, except that: Precursor composition dopant Mix evenly with the precursor Et3Al in a weight ratio of 1:9.

[0053] Embodiment 11: A metal film, the preparation method is basically the same as that of Example 1, except that: Precursor composition dopant Mix evenly with the precursor (EtO)4Si in a weight ratio of 1:9.

[0054] Comparative Example 1: A metal film, the preparation method is basically the same as that of Example 1, except that: No dopants were added.

[0055] Effect example: The electrical properties of the metal films of Example 1 and Comparative Example 1 were analyzed, and the capacitance density and dielectric constant were measured to obtain the data in the following table.

[0056]

[0057] As shown in the above table, based on the single component precursor of Comparative Example 1, Example 1 adds The precursor composition was obtained by mixing. The results showed that the capacitance density and dielectric constant of the film of Example 1 were significantly higher than those of Comparative Example 1, wherein the capacitance density increased by 9% and the dielectric constant increased by 5%. The film of Example 1 had more excellent electrical properties, and could significantly improve device performance when applied to transistor gate dielectric layers, metal gate electrodes, organic light-emitting display coatings, copper interconnect diffusion barriers, DRAM dielectric layers, microfluidic and microelectronic coatings, sensors and other fields.

[0058] It is obvious to those skilled in the art that the present application is not limited to the details of the exemplary embodiments described above, and that the present application can be implemented in other specific forms without departing from the spirit or essential features of the present application. Therefore, the embodiments should be regarded as exemplary and non-limiting in all respects, and the scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present application. Any reference numeral in a claim should not be regarded as limiting the claim to which it relates.

[0059] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A precursor composition for improving the electrical properties of a metal film, characterized in that: 1) A precursor containing a first concentration is selected from one or more combinations of the following formula 1, formula 2, formula 3, formula 4 and formula 5; [General formula 1] ; [Formula 2] ; [General formula 3] ; [Formula 4] ; [General formula 5] ; 2) containing a dopant of a second concentration, selected from one or a combination of the following general formula 6 and general formula 7; [Formula 6] ; [Formula 7] ; 3) containing a solvent of a third concentration, wherein the solvent is one or more combinations of organic compounds selected from the group consisting of C1-C16 saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, and phosphines; In the general formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn; R1 to R5 are each independently selected from the following groups: H, C1 to C6 groups; R6 to R8 are each independently selected from the following groups: C1 to C6 groups; R9 to R 11 Each is independently selected from the following groups: H, C1 to C6 groups; m, n, k are each independently selected from: 1, 2, 3; L1 to L4 are each independently selected from -1-valent anionic ligands composed of one or more of the following groups: NR'2, OR', R'Cp, amidine, β-diketone and ketimine, R' is H or a C1 to C6 group, and adjacent R' may be joined to form a hydrocarbon ring; Wherein, the C1 to C6 groups are linear, branched or cyclic groups, the C1 to C6 groups are saturated, monounsaturated or polyunsaturated groups, and the C1 to C6 groups are optionally substituted with 0, 1 or more fluorine atoms; In the solute of the composition, the mass fraction of the precursor at the first concentration is greater than or equal to 90%, the mass fraction of the dopant at the second concentration is less than or equal to 10%, and the concentration of the dopant at the second concentration is greater than or equal to 1 ppt; the mass fraction of the solvent at the third concentration is 0~50%.

2. A method for improving the electrical properties of a metal film, characterized in that: include: A precursor having a first concentration, a dopant having a second concentration, and a solvent having a third concentration are mixed to obtain a composition, and the composition is vaporized to form a vapor-phase metal source; Introducing the gas phase metal source into a reaction chamber equipped with a substrate, and supplying a reactive gas or a plasma of a reactive gas into the reaction chamber to deposit a metal film on the substrate; Wherein, the composition comprises: 1) A precursor of a first concentration is selected from one or more combinations of the following formula 1, formula 2, formula 3, formula 4 and formula 5; [General formula 1] ; [Formula 2] ; [General formula 3] ; [Formula 4] ; [General formula 5] ; 2) a dopant of a second concentration, selected from one or a combination of the following general formula 6 and general formula 7; [Formula 6] ; [Formula 7] ; 3) a solvent of a third concentration, wherein the solvent is one or more combinations of organic compounds selected from the group consisting of C1-C16 saturated or unsaturated hydrocarbons, ketones, ethers, esters, tetrahydrofuran, amines, sulfides, and phosphines; In the general formulas 1 to 7, M1 is Ti, Zr or Hf, M2 is Ti, Zr, Hf, Nb, Ta, La or Ce, M3 is Mg, M4 is Al, In or Ga; M5 is Si, Ge or Sn; R1 to R5 are each independently selected from the following groups: H, C1 to C6 groups; R6 to R8 are each independently selected from the following groups: C1 to C6 groups; R9 to R 11 Each is independently selected from the following groups: H, C1 to C6 groups; m, n, k are each independently selected from: 1, 2, 3; L1 to L4 are each independently selected from -1-valent anionic ligands composed of one or more of the following groups: NR'2, OR', R'Cp, amidine, β-diketone and ketimine, R' is H or a C1 to C6 group, and adjacent R' may be joined to form a hydrocarbon ring; Wherein, the C1 to C6 groups are linear, branched or cyclic groups, the C1 to C6 groups are saturated, monounsaturated or polyunsaturated groups, and the C1 to C6 groups are optionally substituted with 0, 1 or more fluorine atoms; In the solute of the composition, the mass fraction of the precursor at the first concentration is greater than or equal to 90%, the mass fraction of the dopant at the second concentration is less than or equal to 10%, and the concentration of the dopant at the second concentration is greater than or equal to 1 ppt; the mass fraction of the solvent at the third concentration is 0~50%.

3. The method according to claim 2, characterized in that The gasification is specifically performed by heating the composition at 50-120°C.

4. The method according to claim 2, characterized in that: The reactive gas includes one or more combinations of oxygen, ozone, water vapor, hydrogen peroxide, hydrogen, ammonia, nitric oxide, nitrous oxide, nitrogen dioxide, and hydrazine, and the plasma is radio frequency plasma, direct current plasma, or remote plasma.

5. The method according to claim 2, characterized in that: In the step of depositing a metal film on the substrate, the temperature in the reaction chamber is 100-380°C.

6. A metal film, characterized in that: The method for improving the electrical properties of a metal film according to any one of claims 2 to 5 is used to prepare the metal film, wherein the metal film comprises a compound of the following formula: (A （a） O b B （1-a） )N c C d ; Wherein, 0<a≤1, 0≤b<3, 0≤c<2, 0≤d<1; A is the metal element of the precursor at the first concentration, and A is selected from one or more combinations of M1, M3, M4 and M5; B is the metal element of the second concentration of the dopant, and B is selected from M2.

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