Atomization confinement crystallization method and device for low-dimensional metal halide

Abstract

The invention discloses an atomization confinement crystallization method and device for a low-dimensional metal halide, and belongs to the technical field of preparation of metal halides. The device comprises an anti-solvent bottle, the anti-solvent bottle is provided with an air inlet guide pipe and an air guide pipe, and the air guide pipe is communicated with a ventilation bottle; a crystallization bottle is arranged in the ventilation bottle, an atomizer is arranged in the crystallization bottle, and a limited field mask plate is arranged at a bottle opening in the top of the crystallization bottle; the ventilation bottle is provided with an air outlet guide pipe. The method for crystallizing in the confinement space by using the atomized precursor is considered to be an ideal technical route for preparing the array type light guide scintillation screen. And a foundation is laid for the requirements of high-performance scintillation screens in occasions such as medical imaging, airport security inspection, deep space exploration and the like in the future.

Description

Technical Field

[0001] The invention belongs to the technical field of preparation of metal halides, and in particular to an atomization confined crystallization method and device for low-dimensional metal halides. Background Art

[0002] After decades of rapid development, luminescent materials have made remarkable progress in the fields of nuclear detection, medical imaging, display technology, etc. For example, organic self-luminous OLED, Mini-LED and next-generation Micro-LED technology in the display field. In particular, Micro-LED, which represents the next-generation core display technology, has been commercialized by well-known manufacturers such as Samsung and BOE. At present, well-known manufacturers such as Samsung and Sony have occupied most of the patented technologies in the field of Micro-LED. Focusing on the technical concept of developing one generation and pre-researching one generation, my country must seize a certain market share in the field of next-generation display technology.

[0003] Luminescent materials are key components in nuclear detectors and display screens. The performance of luminescent materials directly determines the detection efficiency, screen resolution and other parameters. In recent years, metal halide materials have great application potential in the field of next-generation luminescent materials due to their continuously adjustable luminescence spectrum, wide color gamut, high light yield, simple preparation process and low price. In particular, new low-dimensional metal halide materials, due to their inherent strong electron-phonon coupling effect, most of them have self-trapped exciton-type luminescence centers, making the photoelectric performance in many aspects reach or even exceed that of traditional scintillator materials.

[0004] Currently, low-dimensional metal halide materials are mainly obtained by evaporating precursor solvents. The resulting crystals are difficult to control in terms of crystal orientation and are disordered. Moreover, they usually need to be mechanically ground into smaller powders before they can be further used to prepare scintillating screens. Simple mechanical grinding undoubtedly causes great damage to the quality of the crystals, which will lead to a serious decline in the photoelectric performance of the material and a resolution limit in the display quality. It is impossible to meet the future demand for higher-resolution display technology and radiation imaging technology. Summary of the invention

[0005] In view of the above problems, the present invention provides a method and device for atomized confined crystallization of low-dimensional metal halides. Through the new idea of ​​atomized confined crystallization, a metal halide scintillator screen with a light guide array structure is prepared.

[0006] To achieve the above object, the technical solution of the present invention is as follows:

[0007] A device for atomizing confined crystallization of low-dimensional metal halides comprises an antisolvent bottle, wherein the antisolvent bottle is provided with an air inlet duct and an air guide tube, wherein the air guide tube is connected to a ventilation bottle; a crystallization bottle is arranged inside the ventilation bottle, an atomizer is arranged inside the crystallization bottle, a confined domain mask is arranged at the top of the crystallization bottle; and the ventilation bottle is provided with an air outlet duct.

[0008] The nitrogen gas is passed to blow the antisolvent-containing gas to the upper surface of the confined mask in the crystallization bottle, the precursor solution is atomized by the atomizer and overflows through the array-type confined space channel, and the high concentration of antisolvent gas on the upper surface of the confined mask causes the precursor gas flow to begin to crystallize in the confined mask channel. Due to the spatial restriction effect of the confined mask nano-pipe array, the metal halide crystallizes radially along the channel to form a low-dimensional metal halide crystal with a one-dimensional array structure. The precursor solution is atomized, and at the same time, combined with the spatial restriction structure of the confined mask array pipe, the obtained low-dimensional metal halide crystals are arranged in a radial array and applied to a pixelated scintillating screen. The scintillating screen can have a nanometer-scale array light channel structure, which can be well coupled with the array pixels. At the same time, the optical waveguide effect propagating in the radial direction can effectively suppress lateral light scattering and improve the efficiency of effective emitted photons, thereby effectively improving radiation imaging and the image resolution of backlight display technology.

[0009] Preferably, the air outlet of the air inlet duct in the antisolvent bottle is located below the liquid level in the antisolvent bottle, and the air inlet of the air duct is located above the liquid level in the solvent bottle.

[0010] Preferably, the air outlet of the air guide tube is located on the upper surface of the confining mask at the mouth of the crystallization bottle.

[0011] Further preferably, the air inlet direction of the air guide pipe is parallel to the upper surface of the confined array plate.

[0012] Preferably, the distance between the air inlet in the ventilation bottle and the upper surface of the confining mask is 0 to 4 cm.

[0013] Further preferably, the distance between the air inlet in the ventilation bottle and the upper surface of the confining mask is 2 cm.

[0014] The distance and position between the air inlet in the ventilation bottle and the upper surface of the confining mask can be flexibly set according to the crystallization conditions.

[0015] Preferably, the anti-solvent bottle is provided with a heating function to increase the anti-solvent evaporation speed and the anti-solvent airflow concentration.

[0016] Preferably, the air inlet conduit of the anti-solvent bottle is provided with a valve for controlling the air inlet speed and flow rate.

[0017] Preferably, the air guide tube is provided with a valve for controlling the speed and size of the air flow.

[0018] Preferably, the mouth of the crystallization bottle is provided with a sealing buckle, so that the atomized airflow in the crystallization bottle can only overflow through the array channel of the confining mask.

[0019] Preferably, the confinement mask is a double-pass nanotube.

[0020] Preferably, the atomizer is provided with a heating and temperature control function.

[0021] A method for atomizing and confined crystallization of low-dimensional metal halides comprises the following steps:

[0022] S1. Filter the prepared precursor solution through a sand core funnel and add it into an atomizer, and heat the atomizer and keep it at a constant temperature;

[0023] S2, adding the anti-solvent into the anti-solvent bottle, heating it and maintaining a constant temperature;

[0024] S3, introduce N2 through the air inlet conduit and open the air inlet valve of the antisolvent bottle;

[0025] S4, open the valve connecting the anti-solvent bottle and the ventilation bottle, let the anti-solvent gas flow slowly blow over the upper surface of the confined mask, turn on the atomization function of the atomizer to atomize the precursor, and perform a crystallization reaction;

[0026] S5. When no atomized precursor gas overflows from the upper surface of the confined mask, the reaction is terminated, the crystallized product is taken out, and placed in a vacuum drying oven at a certain temperature for drying to obtain an array-type crystallized low-dimensional metal halide scintillating screen.

[0027] Preferably, the precursor solution in step S1 is filtered through a sand core funnel under negative pressure and hot filtration, and the specifications of the sand core funnel include but are not limited to 0.22 μm and 0.40 μm.

[0028] Preferably, the solvent of the precursor solution in step S1 includes dimethylformamide, acetone, isopropanol or dimethyl sulfoxide solvent.

[0029] Preferably, the concentration of the precursor in the precursor solution in step S1 is 0.2-1.8 mol / L, the molar ratio of the metal halide precursor to the organic halide precursor in the precursor is 1:1-2, and the precursor is heated and stirred at 35-60°C until completely dissolved.

[0030] Preferably, the constant temperature setting value in step S1 is 2-5°C lower than the critical point temperature of the crystallization temperature of the precursor, including but not limited to 0-80°C.

[0031] Preferably, the anti-solvent described in step S2 is selected according to the polarity constant. When the polarity is 0 to 2.5, the anti-solvent includes toluene; when the polarity is 2.5 to 5, the anti-solvent includes anhydrous ethanol or ether; when the polarity is 5 to 7.5, the anti-solvent includes acetone; when the polarity is >7.5, the anti-solvent includes ultrapure water.

[0032] Preferably, the constant temperature setting value in step S2 is 2-5° C. lower than the boiling point of the anti-solvent, including but not limited to 0-120° C.

[0033] Preferably, the flow rate of the N2 is 0.5 to 4 L / min.

[0034] More preferably, the flow rate of the N2 is 2 L / min.

[0035] The flow rate of N2 is determined by the crystallization rate.

[0036] Preferably, the type of the atomizer described in step S4 includes an ultrasonic atomizer or a gas-liquid two-phase flow atomizer.

[0037] Preferably, the air intake rate of the antisolvent is 0.2 to 1 L / min.

[0038] Preferably, the atomization speed of the precursor solution is 0.3-1.2 L / min.

[0039] Factors that control crystallization include but are not limited to the antisolvent air intake speed, antisolvent temperature, the distance and position between the air inlet of the vent bottle and the confined mask, and the atomization speed of the precursor. If the air intake speed and antisolvent temperature are too high, it is easy to cause rapid and uncontrollable crystallization, forming a large number of polycrystalline components and reducing performance. If the air inlet of the vent bottle is too close to the mask, it will also aggravate the formation of polycrystalline. Therefore, multiple factors need to be adjusted comprehensively to form a controllable slow crystallization process.

[0040] Preferably, the temperature of the vacuum drying oven in step S5 is 20 to 80° C., and the drying time is 12 to 48 hours.

[0041] Preferably, the surface roughness of the array-type crystallized low-dimensional metal halide scintillator screen is less than 0.5 μm.

[0042] More preferably, the surface roughness of the array-type crystal low-dimensional metal halide scintillator screen is 0.1-0.5 μm.

[0043] The beneficial effects of the present invention are:

[0044] 1. The oriented crystals prepared by the atomized confined crystallization method and device of low-dimensional metal halides provided by the present invention can be used in the fields of next-generation Micro-LED screens, flickering fluorescent screens, photodetectors, etc. For example, by controlling the opening and closing arrangement of the confined mask to sequentially atomize and crystallize the three primary colors of red, green and blue, the screen resolution can be achieved at the nanometer level. By controlling the type of crystallized material, detection and imaging of far infrared, X-rays, and neutrons can be achieved. The method of atomized confined crystallization has great application potential in the future application field of optoelectronic materials.

[0045] 2. The atomized confined crystallization method and device for low-dimensional metal halides provided by the present invention have a wide range of applications and can select a variety of precursor solutions that can be atomized.

[0046] 3. The atomized confined crystallization method and device for low-dimensional metal halides provided by the present invention have the advantage of directional controllable crystallization for one-dimensional structured crystals.

[0047] 4. The atomized confined crystallization method and device for low-dimensional metal halides provided by the present invention can use a variety of confined mask templates, such as anodized aluminum double-pass mask templates, quartz tube arrays, optical fiber cladding arrays, etc.

[0048] 5. The atomized confined crystallization method and device of low-dimensional metal halide provided by the present invention can adjust the specifications of the confined mask according to the application site. For example, the nanoscale array can achieve ultra-high resolution of Micro-LED display screens.

[0049] 6. Various crystal materials can be selected according to the application, such as using one-dimensional CsCu2I3 to realize X-ray scintillation screen, and one-dimensional organic and inorganic luminescent materials to realize fast neutron detection and imaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 Schematic diagram of the experimental device of the atomization confined crystallization method; wherein: 1, anti-solvent bottle; 2, air inlet duct; 3, air guide tube; 4, ventilation bottle; 5, double-pass anodized aluminum confinement mask; 6, crystallization bottle; 7 atomizer; 8, air outlet duct;

[0051] Figure 2 It is a schematic diagram of a double-pass anodized aluminum confinement mask;

[0052] Figure 3 Schematic diagram of the structure of low-dimensional metal halide array crystals prepared by the atomized confined crystallization method;

[0053] Figure 4 C8H prepared by atomization confined crystallization method 20 NCuI2 scintillation screen;

[0054] Figure 5C8H prepared by atomization confined crystallization method 20 The luminescence photograph of NCuI2 scintillator screen under 310nm ultraviolet light shows high-brightness fluorescence performance. DETAILED DESCRIPTION

[0055] The technical scheme of the present invention is further described below by way of examples. The raw materials used in the examples can be commercially available or prepared by conventional methods. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0056] In the process of preparing low-dimensional metal halide materials, the crystallization direction of one-dimensional crystals in the prior art is difficult to control, and it is easy to form a large number of disordered needle-like structures. In further applications, it is usually necessary to mechanically grind the disordered crystals into smaller particle sizes to have application value. Simple mechanical grinding undoubtedly brings great damage to the quality of the crystals, which will lead to a serious decline in the photoelectric performance of the material. The present invention utilizes a double-pass space confinement mask to promote the growth of crystals along the axial direction of the template. At the same time, we found that the special precursor solvent can be atomized and can be recrystallized after atomization. According to the shortcomings of the prior art and the new characteristics of atomized crystallization, we introduced the method of atomized confined crystallization for the first time and designed the corresponding experimental device.

[0057] The method and device mainly include: using an atomizer to atomize the precursor solution and overflow through the confined mask plate, encountering the anti-solvent gas on the upper surface of the confined mask plate and starting to crystallize along the confined space. The method can prepare array light-emitting screens of multiple specifications and types. It is suitable for various fields such as LED, optoelectronic devices and nuclear radiation detection.

[0058] The steps for preparing the precursor solution in the embodiment of the present invention are as follows:

[0059] (1) Selection of raw materials: According to the required metal halide composition, select appropriate metal halide precursors, such as PbI2, PbCl2, PbBr2, CuI, CuBr, CuCl and organic halide precursors, such as C8H 20 NI, (C8H 20 N)Br, (C8H 20 N)Cl as raw material, ensuring that all raw materials have high purity to reduce the impact of impurities on the final product;

[0060] (2) Determining the concentration of the precursor solution and selecting the molar ratio: the concentration of the precursor in the precursor solution is 0.2-1.8 mol / L; according to the selected concentration, the molar ratio of the metal halide precursor to the organic halide precursor is 1:1-2.

[0061] (3) Weighing and mixing: Use a precision balance to accurately weigh the raw materials, place them in a clean container, add an appropriate amount of solvent (such as DMSO, DMF, acetone, isopropanol), heat and stir at 35-60°C until completely dissolved to obtain a precursor solution.

[0062] Example 1

[0063] A low-dimensional metal halide atomization confined crystallization device, such as Figure 1 As shown, it includes an anti-solvent bottle 1, the anti-solvent bottle 1 is provided with an air inlet duct 2 and an air guide tube 3, the air guide tube 3 is connected to a ventilation bottle 4; a crystallization bottle 6 is arranged inside the ventilation bottle 4, an atomizer 7 is arranged inside the crystallization bottle 6, and a double-pass anodized aluminum 5 is arranged at the top of the crystallization bottle 7; the ventilation bottle 4 is provided with an air outlet duct 8; the air outlet of the air inlet duct 2 in the anti-solvent bottle 1 is located below the liquid level of the anti-solvent in the anti-solvent bottle 1, and the air inlet of the air guide tube 3 is located above the liquid level of the anti-solvent in the solvent bottle 1; the air outlet of the air guide tube 3 is located at the crystallization bottle 6 The upper surface of the double-pass anodized aluminum 5 at the bottle mouth; the anti-solvent bottle 3 is provided with a heating function; the air inlet duct 1 of the anti-solvent bottle 1 is provided with a valve for controlling the air inlet speed and flow; the air guide tube 3 is provided with a valve for controlling the air flow speed and size; the air inlet direction of the air guide tube 3 is parallel to the upper surface of the double-pass anodized aluminum 5; the bottle mouth of the crystallization bottle 6 is provided with a sealing buckle, so that the atomized airflow in the crystallization bottle 6 can only overflow through the array channel of the double-pass anodized aluminum 5; the double-pass anodized aluminum 5 is a double-pass nano-conduit; the structure of the double-pass anodized aluminum 5 is as follows Figure 2 shown.

[0064] Example 2

[0065] A method for atomization confined crystallization of low-dimensional metal halides is provided. The device in Example 1 is used to prepare a one-dimensional C8H 20 NCuI2 phosphor screen, including: C8H 20 NCuI2 precursor solution, adding the above clarified precursor solution into an atomizer, atomizing and crystallizing at 50°C, and preparing high-performance array-type crystallized low-dimensional metal halide in a double-pass anodized aluminum mask.

[0066] The atomization confined crystallization method of a low-dimensional metal halide specifically comprises the following steps:

[0067] S1. Use a 0.40 μm sand core funnel to filter at 50°C under negative pressure;

[0068] S2. The precursor solution obtained by filtration in step S1 is added to the atomizer and heated to maintain at 50°C;

[0069] S3. A double-pass anodized aluminum mask having a pore size of 200 nm and a thickness of 1 μm is sealed around the mouth of the crystallization bottle;

[0070] S4. Add ether as an anti-solvent into the anti-solvent bottle until the ether submerges the air inlet, turn on the heating and maintain at 33°C;

[0071] S5. Open the connecting valve between the anti-solvent bottle and the ventilation bottle, and introduce a high concentration of ether gas into the ventilation bottle;

[0072] S6. Turn on the atomizer to atomize the precursor solution and start crystallization;

[0073] S7. After the atomization is maintained for 24 hours, the crystallization is completed, the valve is closed and the heating is continued, and the crystallized product is taken out;

[0074] S8. Place the scintillator screen in a 60°C vacuum drying oven and dry for 24 hours to obtain an array-type crystalline low-dimensional metal halide scintillator screen.

[0075] The upper and lower surfaces of the obtained array-type crystallized low-dimensional metal halide were polished with 2000-grit fine sandpaper until they were smooth and flat, and finally the atomized confined crystallized oriented C8H 20 NCuI2 scintillation screen.

[0076] Example 3

[0077] A method for atomization confined crystallization of low-dimensional metal halides is disclosed. The device in Example 1 is used to prepare a one-dimensional CsCu2I3 fluorescent screen using dimethyl sulfoxide as a solvent for a precursor solution and anhydrous ethanol as an anti-solvent. The method specifically comprises: preparing a CsCu2I3 precursor solution, adding the clarified precursor solution into an atomizer, atomizing and crystallizing the solution at 60°C, and preparing a high-performance array-type crystallized low-dimensional metal halide in a double-pass anodized aluminum mask.

[0078] The atomization confined crystallization method of low-dimensional metal halide specifically comprises the following steps:

[0079] S1. Use a 0.22 μm sand core funnel to filter at 60°C under negative pressure;

[0080] S2. Add the precursor solution obtained by filtration in step S1 to the atomizer, and turn on the atomizer heating and heat preservation function to maintain it at 60°C;

[0081] S3. A double-pass anodized aluminum mask having an aperture of 40 nm and a thickness of 1 μm is sealed around the mouth of the crystallization bottle;

[0082] S4. Add anhydrous ethanol as an anti-solvent into the anti-solvent bottle until the anhydrous ethanol submerges the air inlet, turn on the heating and maintain at 50°C;

[0083] S5. Open the connecting valve between the anti-solvent bottle and the ventilation bottle, and introduce a high concentration of anhydrous ethanol gas into the ventilation bottle;

[0084] S6. Turn on the atomizer to atomize the precursor solution and start crystallization;

[0085] S7. After the atomization is maintained for 48 hours, the crystallization is completed, the valve is closed and the heating is continued, and the crystallized product is taken out;

[0086] S8. Place the scintillator screen in a 60°C vacuum drying oven and dry for 12 hours to obtain an array-type crystalline low-dimensional metal halide scintillator screen.

[0087] The upper and lower surfaces of the obtained array-type crystallized low-dimensional metal halide are polished with 2000 mesh fine sandpaper until they are smooth and flat, and finally a directional CsCu2I3 scintillating screen of atomized confined crystallization can be obtained.

[0088] Example 4

[0089] A method for atomization confined crystallization of low-dimensional metal halides, using the device in Example 1, using dimethyl sulfoxide as the solvent of the precursor solution, and toluene as the anti-solvent to prepare a low-dimensional (C8H 20 N)2MnBr4 fluorescent screen, specifically including: configuration (C8H 20 N)2MnBr4 precursor solution, adding the above clarified precursor solution into an atomizer, atomizing and crystallizing at 30°C, and preparing high-performance array-type crystallized low-dimensional metal halide in a double-pass anodized aluminum mask.

[0090] The atomization confined crystallization method of low-dimensional metal halide specifically comprises the following steps:

[0091] S1. Filter at room temperature using a 0.22 μm sand core funnel under negative pressure;

[0092] S2. The precursor solution obtained by filtration in step S1 is added to the atomizer and heated to maintain at 30°C;

[0093] S3. A double-pass anodized aluminum mask having a pore size of 200 nm and a thickness of 1 μm is sealed around the mouth of the crystallization bottle;

[0094] S4. Add toluene as an anti-solvent into the anti-solvent bottle until the toluene submerges the air inlet, turn on the heating and maintain at 80°C;

[0095] S5. Open the valve connecting the anti-solvent bottle and the ventilation bottle, and introduce a high concentration of toluene gas into the ventilation bottle;

[0096] S6. Turn on the atomizer to atomize the precursor solution and start crystallization;

[0097] S7. After the atomization is maintained for 48 hours, the crystallization is completed, the valve is closed and the heating is continued, and the crystallized product is taken out;

[0098] S8. Place the scintillator screen in a 30°C vacuum drying oven and dry for 24 hours to obtain an array-type crystalline low-dimensional metal halide scintillator screen.

[0099] S9. Use 2000 mesh fine sandpaper to polish the upper and lower surfaces of the obtained array-type crystallized low-dimensional metal halide until they are smooth and flat, and finally obtain the oriented atomized confined crystal (C8H 20 N)2MnBr4 scintillation screen.

[0100] The structural schematic diagram of the array scintillation screen prepared in Examples 2 to 4 is shown in FIG. Figure 3 As shown. C8H prepared in Example 2 20 NCuI2 flash screen Figure 4 As shown, its luminescence state under 310nm ultraviolet light is as follows Figure 5 shown.

[0101] The array scintillating screens prepared in Examples 3 to 4 have the same structural features as those in Example 2, but have different fluorescence characteristics due to the differences in precursor solvents and luminescent materials, so they will not be described again here.

[0102] It should be understood that the above embodiments are only used to illustrate the present invention and are not used to limit the scope of protection of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.

Claims

1. A low-dimensional metal halide atomization confined crystallization device, characterized in that: It comprises an anti-solvent bottle, which is provided with an air inlet duct and an air guide tube, wherein the air guide tube is connected with a ventilation bottle; a crystallization bottle is arranged inside the ventilation bottle, an atomizer is arranged inside the crystallization bottle, a finite domain mask is arranged at the top of the crystallization bottle; and the ventilation bottle is provided with an air outlet duct.

2. The atomization confined crystallization device of low-dimensional metal halide according to claim 1, characterized in that: The air outlet of the air inlet duct in the anti-solvent bottle is located below the liquid level in the anti-solvent bottle, and the air inlet of the air duct is located above the liquid level in the solvent bottle; the air outlet of the air duct is located on the upper surface of the confining mask at the mouth of the crystallization bottle.

3. The atomization confined crystallization device of low-dimensional metal halide according to claim 2, characterized in that: The air inlet of the air guide tube is parallel to the upper surface of the confined array plate; the distance between the air inlet in the ventilation bottle and the upper surface of the confined mask plate is 0 to 4 cm.

4. The atomization confined crystallization device of low-dimensional metal halide according to claim 1, characterized in that: The anti-solvent bottle is provided with a heating function; the atomizer is provided with a heating and temperature control function; the air inlet duct of the anti-solvent bottle is provided with a valve for controlling the air inlet speed and flow; the air guide tube is provided with a valve for controlling the air flow speed and size; the mouth of the crystallization bottle is provided with a sealing buckle, so that the atomized air flow in the crystallization bottle can only overflow through the array channel of the confinement mask; the confinement mask is a double-pass nano-conduit.

5. A method for atomization confined crystallization of low-dimensional metal halides, characterized in that: The atomization confined crystallization device of low-dimensional metal halide as claimed in any one of claims 1 to 4 comprises the following steps: S1. Filter the prepared precursor solution through a sand core funnel and add it into an atomizer, and heat the atomizer and keep it at a constant temperature; S2, adding the anti-solvent into the anti-solvent bottle, heating it and maintaining a constant temperature; S3, introduce N2 through the air inlet conduit and open the air inlet valve of the antisolvent bottle; S4, turning on the atomization function of the atomizer to atomize the precursor, opening the valve connecting the anti-solvent bottle and the ventilation bottle, allowing the anti-solvent gas flow to slowly blow over the upper surface of the confining mask to perform a crystallization reaction; S5. When no atomized precursor gas overflows from the upper surface of the confined mask, the reaction is terminated, the crystallized product is taken out, and placed in a vacuum drying oven at a certain temperature for drying to obtain an array-type crystallized low-dimensional metal halide scintillating screen.

6. The method for atomized confined crystallization of low-dimensional metal halides according to claim 5, characterized in that: The precursor solution described in step S1 is filtered through a sand core funnel under negative pressure, and the specifications of the sand core funnel include but are not limited to 0.22μm and 0.40μm; the concentration of the precursor in the precursor solution described in step S1 is 0.2-1.8mol / L, and the molar ratio of the metal halide precursor to the organic halide precursor in the precursor is 1:1-2, and the precursor is heated and stirred at 35-60°C until completely dissolved; the solvent of the precursor solution described in step S1 includes dimethylformamide, acetone, isopropanol or dimethyl sulfoxide solvent; the constant temperature setting value described in step S1 is 2-5°C lower than the critical point temperature of the crystallization temperature of the precursor, including but not limited to 0-80°C.

7. The method for atomized confined crystallization of low-dimensional metal halides according to claim 5, characterized in that: The type of atomizer described in step S4 includes an ultrasonic atomizer or a gas-liquid two-phase flow atomizer; the anti-solvent described in step S2 is selected according to the polarity constant. When the polarity is 0-2.5, the anti-solvent includes toluene; when the polarity is 2.5-5, the anti-solvent includes anhydrous ethanol or ether; when the polarity is 5-7.5, the anti-solvent includes acetone; when the polarity is >7.5, the anti-solvent includes ultrapure water; the constant temperature setting value described in step S2 is 2-5°C lower than the boiling point temperature of the anti-solvent, including but not limited to 0-120°C.

8. The method for atomized confined crystallization of low-dimensional metal halides according to claim 5, characterized in that: The flow rate of the N2 is 0.5-4 L / min; the air intake rate of the antisolvent is 0.2-1 L / min; the atomization rate of the precursor solution is 0.3-1.2 L / min; the temperature of the vacuum drying oven in step S5 is 20-80°C, and the drying time is 12-48 hours.

9. An array-type crystal low-dimensional metal halide scintillator screen, characterized in that: The array-type crystallized low-dimensional metal halide scintillating screen is prepared by the atomized confined crystallization method of the low-dimensional metal halide according to any one of claims 5 to 8.

10. The array-type crystal low-dimensional metal halide scintillator screen according to claim 9, characterized in that: The surface roughness of the array-type crystallized low-dimensional metal halide scintillator screen is less than 0.5 μm.

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