Film size parameter detection method and system

Abstract

The invention relates to a method and a system for detecting dimension parameters of a film layer, and the system comprises a signal transmitter which is used for transmitting an electromagnetic wave; the electromagnetic wave is irradiated to the irradiation light guide mirror to form an incident electromagnetic wave, the incident electromagnetic wave is incident to a film layer at an incident angle, and a reflected electromagnetic wave is generated; the receiving light guide mirror is used for receiving the reflected electromagnetic waves; the optical axis setting mechanism is configured to adjust the deflection of the film layer or the irradiation light guide mirror so as to control the incident angle between an optical axis of the incident electromagnetic wave and the film layer; the receiver is connected with the receiving light guide mirror so as to measure the reflection intensity of the reflected electromagnetic wave; and the data processing unit is electrically connected with the receiver and is used for solving a size parameter of the thickness or the surface profile of the film layer according to the reflection intensity and a refractive index.

Description

Technical Field

[0001] The present invention relates to the technical field of packaging grinding, and in particular to a method and system for detecting the size parameters of a film layer of packaging grinding, wherein the film layer is a matte film layer or an optical scattering film layer. Background Art

[0002] The non-destructive dimensional parameter characteristic detection method of high extinction materials (such as epoxy molding compound) is to use a two-way clamping non-contact detection with visible light or short-wave infrared light to calculate the dimensional parameters to be measured, but due to the inherent wavelength-related high extinction characteristics of the film layer, the detection accuracy of this method is easily affected. At present, the grinding thickness control of grinders for grain materials and metal materials is relatively mature, but the grinding deviation of epoxy molding compound materials is relatively large, so the detection before and after grinding becomes more important. In other words, it is an urgent need to be able to perform non-destructive direct detection of dimensional parameters for high extinction material films, and to be able to cover a few microns (μm) to more than 1 millimeter (mm).

[0003] In addition, due to the small size of semiconductor packages or dies, for specific area detection requirements, the detection light spot should be small to avoid the averaging distortion effect caused by too large a detection area. Summary of the invention

[0004] The purpose of the present invention is to provide a method and system for detecting the size parameters of a film layer of package grinding, which utilizes an electromagnetic wave within a bandwidth component to irradiate a film layer such as an extinction film layer or an optical scattering film layer, and obtains a size parameter of the film layer based on the reflected electromagnetic wave and a refractive index. Moreover, an incident angle of the electromagnetic wave incident on the film layer can be adjusted and controlled through an optical axis setting mechanism, and further, the electromagnetic wave incident on the film layer is narrowed (i.e., the light spot is reduced) through one or two focusing concave mirrors of an irradiation light guide mirror, so as to detect small-volume semiconductor packages or dies, and avoid the occurrence of averaging distortion effect due to too large a detection area.

[0005] According to the above-mentioned purpose, the present invention provides a method for detecting the size parameters of a film layer of packaging grinding, comprising emitting an electromagnetic wave within a bandwidth from a signal transmitter in a first medium; measuring a first reflection intensity of a first interface of the film layer and a first reflection intensity of a second interface of the film layer at a test point, wherein the first interface is located between the first medium and the film layer, the second interface is located on the opposite side of the first interface, and the electromagnetic wave contacts the first interface and the second interface in sequence; and calculating a size parameter from the first reflection intensity of the first interface, the first reflection intensity of the second interface and a refractive index of the film layer.

[0006] In some embodiments, the electromagnetic wave is at least one of visible light, near infrared light, short-wave infrared light, and terahertz radiation.

[0007] In some embodiments, the interface reflection intensity is a time domain intensity signal or a frequency domain interference signal.

[0008] In some embodiments, the step of calculating the size parameter from the first reflection intensity of the first interface, the first reflection intensity of the second interface and the refractive index of the film layer includes: calculating a thickness of the film layer from a time interval between a time point of the first reflection intensity of the first interface and a time point of the first reflection intensity of the second interface and a refractive index of the film layer, the size parameter being the thickness; and recording the thickness at the test point.

[0009] In some embodiments, the step of recording the thickness of the test point also includes: moving to the next test point, then returning to the step of emitting the electromagnetic wave within the bandwidth from the signal transmitter in the first medium and repeating a predetermined number of times to form multiple test points; and after the predetermined number of times, calculating an average value, a maximum value, a minimum value, or a standard deviation of each thickness of the multiple test points, the dimensional parameters being the average value, the maximum value, the minimum value and the standard deviation of each thickness.

[0010] In some embodiments, the step of calculating the size parameter from the first reflection intensity of the first interface, the first reflection intensity of the second interface and the refractive index of the film layer includes: calculating a thickness of the film layer by performing a discrete Fourier transform from the first reflection intensity of the first interface of the film layer and the first reflection intensity of the second interface to a frequency domain signal intensity at different frequencies formed by a frequency domain calculation and a refractive index of the film layer, wherein the size parameter is the thickness; and recording the thickness at the test point.

[0011] In some embodiments, the step of recording the thickness of the test point also includes: moving to the next test point, then returning to the step of emitting the electromagnetic wave within the bandwidth from the signal transmitter in the first medium and repeating a predetermined number of times to form multiple test points; and after the predetermined number of times, calculating an average value, a maximum value, a minimum value, or a standard deviation of each thickness of the multiple test points, the dimensional parameters being the average value, the maximum value, the minimum value and the standard deviation of the thicknesses.

[0012] In some embodiments, the step of calculating the size parameter from the first reflection intensity of the first interface, the first reflection intensity of the second interface and the refractive index of the film layer includes: calculating a relative distance of the first interface of the film layer from a time interval between a time point of the first reflection intensity of the first interface and a time reference point and a refractive index of the first medium, and calculating a relative distance of the second interface of the film layer from the time point of the first reflection intensity of the first interface and another time interval between a time point of the first reflection intensity of the second interface and the time reference point and the refractive index of the film layer; recording the two relative distances of the test points; moving to the next test point, and then returning to the step of emitting the electromagnetic wave within the bandwidth from the signal transmitter in the first medium and repeating a predetermined number of times to form multiple test points; and after the predetermined number of times, calculating a surface profile of the first interface and the second interface through each relative distance measured at the multiple test points, and the size parameter is the surface profile.

[0013] In some embodiments, the surface profile includes coplanarity, warpage, or bow.

[0014] According to the above-mentioned purpose, the present invention further provides a size parameter detection system for a film layer of packaging grinding, comprising a signal transmitter for emitting an electromagnetic wave with a bandwidth component; an irradiating light guide mirror, the electromagnetic wave irradiates the irradiating light guide mirror to form an incident electromagnetic wave, the incident electromagnetic wave is incident on a film layer at an incident angle and generates a reflected electromagnetic wave; a receiving light guide mirror, for receiving the reflected electromagnetic wave; an optical axis setting mechanism, connected to the film layer, the irradiating light guide mirror and one of the receiving light guide mirrors, to adjust the deflection of the film layer or the irradiating light guide mirror or the receiving light guide mirror to control the incident angle between an optical axis of the incident electromagnetic wave and the film layer; a receiver, connected to the receiving light guide mirror, for measuring a reflection intensity of the reflected electromagnetic wave received by the receiving light guide mirror; and a data processing unit, electrically connected to the receiver, for calculating a size parameter of the film layer from the reflection intensity and a refractive index.

[0015] In some embodiments, the electromagnetic wave is at least one of visible light, near infrared light, short-wave infrared light, and megahertz wave.

[0016] In some embodiments, the signal transmitter includes a light source and a high-frequency electromagnetic wave converter, the light source provides the electromagnetic wave to the high-frequency electromagnetic wave converter, and the high-frequency electromagnetic wave converter provides the electromagnetic wave with the bandwidth component.

[0017] In some embodiments, the illumination light guide has one or two focusing concave mirrors for converging the incident electromagnetic wave and / or controlling the incident angle.

[0018] In some embodiments, the dimensional parameters include a thickness and a surface profile.

[0019] In some embodiments, the surface profile includes coplanarity, warp, or curvature.

[0020] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the specific embodiments listed in the accompanying drawings are described in detail below. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of the main process of the method for detecting the size parameters of the film layer of the present invention.

[0022] Figure 2 This is one of the flow diagrams of the method for detecting the size parameters of the film layer of the present invention.

[0023] Figure 3 This is the second flow chart of the method for detecting the size parameters of the film layer of the present invention.

[0024] Figure 4 This is the third flow chart of the method for detecting the size parameters of the film layer of the present invention.

[0025] Figure 5 This is the fourth flow chart of the method for detecting the size parameters of the film layer of the present invention.

[0026] Figure 6 This is the fifth flow chart of the method for detecting the size parameters of the film layer of the present invention.

[0027] Figure 7 It is a structural schematic diagram of the size parameter detection system of the film layer of the present invention.

[0028] Figure 8 The figure is a schematic structural block diagram of a signal transmitter of the film size parameter detection system of the present invention.

[0029] Fig. 9A It is a top view schematic diagram of different detection points of a sample detected by the method for detecting the size parameters of a film layer of the present invention.

[0030] Fig. 9B It is a side view schematic diagram of detecting the P1 position of a sample using the film layer size parameter detection method of the present invention.

[0031] Fig. 9C It is a schematic diagram of the waveform of the reflection intensity in the time domain generated by the film size parameter detection method of the present invention when detecting a sample.

[0032] Fig. 10A It is a schematic diagram of the implementation of the method for detecting the size parameters of the film layer of the present invention.

[0033] Fig. 10B It is a schematic diagram of the method for detecting the size parameters of the film layer of the present invention expressed in the time domain.

[0034] Fig. 10C It is a schematic diagram showing the method for detecting the size parameters of the film layer of the present invention in the frequency domain.

[0035] Fig.11A It is a side view schematic diagram of the size parameter detection method of the film layer of the present invention for detecting the size parameters of the multi-grain sample position.

[0036] Fig. 11B The waveform diagram of the reflection intensity versus time generated by the film size parameter detection method of the present invention for detecting a multi-grain sample is shown.

[0037] Description of reference numerals:

[0038] 100-film layer size parameter detection system; 200-signal transmitter; 210-light source; 220-high frequency electromagnetic wave converter; 300-illumination light guide mirror; 400-receiving light guide mirror; 500-optical axis setting mechanism; 600-receiver; 700-data processing unit; 800-film layer; 900-sample; 910-physical layer; 920-silicon layer; 1000-sample; 1010-metal layer; 1100-sample; F1-first interface; F2-second interface; F3-third interface; L1-electromagnetic wave; L2-incident electromagnetic wave; L3-reflected electromagnetic wave; P1~P5-position; R 11 , R 21 , R 31 - reflected electromagnetic wave; S100 - film layer size parameter detection method; S110 - S130 - steps; S1301 - S1308 - steps; S1301 '- step; θ - incident angle. DETAILED DESCRIPTION

[0039] The advantages, features and technical methods achieved by the present invention will be described in more detail with reference to exemplary embodiments and the accompanying drawings so as to be more easily understood, and the present invention can be implemented in different forms, so it should not be understood that the present invention is limited to the embodiments described herein. On the contrary, for those with ordinary knowledge in the relevant technical field, the provided embodiments will make the present disclosure more thorough and comprehensive and completely convey the scope of the present invention, and the present invention will only be defined by the scope of the attached patent application.

[0040] In addition, the terms "include" and / or "comprising" refer to the presence of stated features, regions, wholes, steps, operations, components and / or parts, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, components, parts and / or combinations thereof.

[0041] In order to facilitate the review committee to understand the content of the present invention and the effects that can be achieved, various specific embodiments listed in conjunction with the drawings are described in detail as follows.

[0042] Figure 1 This is a schematic diagram of the flow chart of the method for detecting the size parameters of the film layer of the present invention. Figure 1 The film layer size parameter detection method S100 of the present invention includes emitting an electromagnetic wave within a bandwidth from a signal transmitter in a first medium (step S110); measuring a first reflection intensity of a first interface of the film layer and a first reflection intensity of a second interface of the film layer at a test point, wherein the first interface is located between the first medium and the film layer, the second interface is located on the opposite side of the first interface, and the electromagnetic wave contacts the first interface and the second interface in sequence (step S120); and calculating a size parameter from the first reflection intensity of the first interface, the first reflection intensity of the second interface and a refractive index of the film layer (step S130).

[0043] In some embodiments, the dimension parameters are a thickness and a relative distance, but are not limited thereto. In some embodiments, the material of the film layer may be a high matte material (eg, epoxy molding compound), such as a matte film layer or an optical scattering film layer, but are not limited thereto.

[0044] Figure 2 Schematic diagram of the process of the film dimension parameter detection method of the present invention, wherein the dimension parameter is a thickness and is calculated in the time domain at a single test point. Figure 1 and Figure 2 , when the dimensional parameter is a thickness and the calculation is performed in the time domain, step S130 includes: determining the first reflection intensity of the first interface at a time point (T 11 ) and a time point (T 21 ) between the time interval (T 21 -T 11 ) and a refractive index of the film layer to calculate a thickness of the film layer, wherein the size parameter is the thickness (step S1301); and recording the thickness of the test point (step S1302).

[0045] Figure 3Schematic diagram of the process of the film layer size parameter detection method of the present invention, wherein the size parameter is a thickness and is calculated in the time domain at N test points. Figure 1 , Figure 2 and Figure 3 , when the dimension parameter is a thickness and is calculated in the time domain, after step S1302, the method further includes: moving to the next test point, then returning to the step of emitting the electromagnetic wave within the bandwidth from the signal transmitter in the first medium and looping a predetermined number of times (e.g., N-1 times) to form multiple test points (e.g., N test points) (step S1303); and after the predetermined number of times, calculating an average value, a maximum value, a minimum value, or a standard deviation of each thickness of the multiple test points (step S1304). In some embodiments, the dimension parameter is the average value, maximum value, minimum value, and standard deviation of each thickness, but is not limited thereto.

[0046] Figure 4 Schematic diagram of the process of the film dimensional parameter detection method of the present invention, wherein the dimensional parameter is a thickness and is calculated in the frequency domain at a single test point. Figure 1 and Figure 4 , when measured at a single test point, the dimensional parameter is a thickness and calculated in the frequency domain, step S130 includes: using the first reflection intensity of the first interface of the film layer and the first reflection intensity of the second interface, through discrete Fourier transformation, to form a frequency domain signal intensity at different frequencies formed by a frequency domain calculation and a refractive index of the film layer to calculate a thickness of the film layer, the dimensional parameter being the thickness (S1301'); and recording the thickness of the test point (step S1302).

[0047] Figure 5 Schematic diagram of the flow of the method for detecting the dimensional parameters of the film layer of the present invention, wherein the dimensional parameters are measured at N test points, the dimensional parameters are a thickness and are calculated in the frequency domain. Figure 1 , Figure 4 and Figure 5 , Figure 5 After step S1302 in the method, the method further includes: moving to the next test point, then returning to the step of emitting the electromagnetic wave within the bandwidth from the signal transmitter in the first medium and repeating a predetermined number of times (e.g., N-1 times) to form a plurality of test points (e.g., N test points) (step S1303); and after the predetermined number of times, calculating an average value, a maximum value, a minimum value, or a standard deviation of each thickness of the plurality of test points (step S1304). In some embodiments, the size parameter is the average value, maximum value, minimum value, and standard deviation of each thickness, but is not limited thereto.

[0048] Figure 6 Schematic diagram of the process of the film size parameter detection method of the present invention, wherein the size parameter is measured at N test points, is a relative distance and is calculated in the time domain. Please refer to Figure 1 and Figure 6 , measured at N test points, the size parameter is a relative distance and calculated in the time domain, step S130 includes: a time point (T 11 ) and a time reference point (T0), and a relative distance of the first interface of the film layer is calculated from a refractive index of the first medium, and the time point (T 11 ) and a time point (T 21 ) and another time interval between the time reference point (T0), and the refractive index of the film layer to calculate a relative distance of the second interface of the film layer (step S1305); record the two relative distances of the test points (step S1306); move to the next test point, then return to the step of emitting the electromagnetic wave within the bandwidth from the signal transmitter in the first medium and repeat a predetermined number of times (for example, N-1 times) to form multiple test points (for example, N test points) (step S1307); and after the predetermined number of times, calculate a surface profile of the first interface and the second interface through each relative distance measured by the multiple test points (step S1308). In some embodiments, the dimensional parameter is a surface profile. In some embodiments, the surface profile may include coplanarity, warpage, or curvature, but is not limited thereto. In some embodiments, the calculation method in step S1308 may include: obtaining the surface profile of two opposite surfaces of the film layer (i.e., the first interface and the second interface) by using the relative distances of different test points.

[0049] In some embodiments, when measuring a single chip, the surface profile of the single chip can be measured. In some embodiments, when measuring multiple chips and each single chip corresponds to each test point, the multiple test points are not on the same straight line, that is, whether the multiple chips are on the same horizontal plane is measured, that is, a surface profile formed by the surfaces of the multiple chips (i.e., the second interface) is measured.

[0050] Figure 7 This is a schematic diagram of the structure of the film size parameter detection system of the present invention. Please refer to Figure 7 The film dimension parameter detection system 100 of the present invention may include a signal transmitter 200 , an irradiating light guide mirror 300 , a receiving light guide mirror 400 , an optical axis setting mechanism 500 , a receiver 600 and a data processing unit 700 .

[0051] Figure 8 Schematic diagram of the structure of the signal transmitter of the film size parameter detection system of the present invention. The signal transmitter 200 is used to transmit an electromagnetic wave L1 with a bandwidth component. Please refer to Figure 7 In some embodiments, the signal transmitter 200 includes a light source 210 and a high-frequency electromagnetic wave converter 220. The light source 210 can provide electromagnetic waves L1 to the high-frequency electromagnetic wave converter 220, and the high-frequency electromagnetic wave converter 220 can provide electromagnetic waves L1 with broadband components.

[0052] Please refer back Figure 7 , the electromagnetic wave L1 irradiates the irradiation light guide mirror 300 to form an incident electromagnetic wave L2 (i.e., incident light), and the incident electromagnetic wave L2 is incident on a film layer 800 at an incident angle θ, and generates a reflected electromagnetic wave L3 (i.e., reflected light). In some embodiments, the irradiation light guide mirror 300 has one or two focusing concave mirrors (not shown) for converging the incident electromagnetic wave L2 and / or controlling the incident angle θ. In some embodiments, the film layer 800 may be a dielectric layer, but is not limited thereto.

[0053] The receiving light guide mirror 400 is used to receive the reflected electromagnetic wave L3.

[0054] The optical axis setting mechanism 500 can be connected to one of the film layer 800, the irradiating light guide mirror 300 and the receiving light guide mirror 400 to adjust the deflection of the film layer 800 or the irradiating light guide mirror 300 or the receiving light guide mirror 400, thereby controlling the incident angle θ between an optical axis of the incident electromagnetic wave L2 and the film layer 800.

[0055] The receiver 600 is connected to the receiving light guide mirror 400 and is used to measure a reflection intensity of the reflected electromagnetic wave L3 received by the receiving light guide mirror 400 .

[0056] The data processing unit 700 is electrically connected to the receiver 600 and is used to calculate a thickness of the film layer 800 from the reflection intensity and a refractive index (n) of the film layer 800; or, to calculate a surface profile of another surface of the two opposite surfaces of the film layer from the reflection intensity of the first interface and a refractive index of the first medium or a refractive index (n) of the film layer.

[0057] Fig. 9A This is a top view schematic diagram of different detection points of the sample detected by the film size parameter detection method. Fig. 9B It is a side view schematic diagram of detecting the P1 position of a sample using the film layer size parameter detection method of the present invention. Fig. 9C This is a waveform diagram of the reflection intensity versus time generated by the film size parameter detection method of the present invention. Please also refer to Figure 1 , Figures 2 to 6 , Fig. 9A , Fig. 9B and Fig. 9C According to the above-mentioned film size parameter detection method S100 and film size parameter detection system 100, since the irradiation light guide mirror 300 has one or two focusing concave mirrors (not shown) for converging the incident electromagnetic wave L2 and / or controlling the incident angle θ, that is, the light spot of the incident electromagnetic wave L2 incident on the surface of the film layer 800 is smaller than the surface of the film layer 800, therefore, the incident and measurement can be performed at different positions (such as positions P1, P2, P3, P4, P5) on the surface of the film layer 800. For example, at Fig. 9B The sample 900 (e.g., semiconductor package) in the embodiment may include a silicon (Si) layer 920, the silicon layer 920 is covered by the film layer 800, the physical layer 910 is below the silicon layer 920, and positions P1, P2, P3, P4, and P5 are all directly above the silicon layer 920. Fig. 9C The vertical axis of the waveform diagram in FIG. 1 is the reflection intensity obtained by the receiving light guide mirror 400, the receiver 600, and the data processing unit 700, and the horizontal axis is time, which represents the reflected electromagnetic wave R corresponding to the first interface F1, the second interface F2, and the third interface F3. 11 , R 21 , R 31 The waveform of ij :i represents the i-th interface, j represents the j-th reflection of this interface. The two forward peaks and one reverse peak in the waveform correspond to the reflected electromagnetic waves R corresponding to the first interface F1, the second interface F2 and the third interface F3. 11 , R 21 , R 31 In some embodiments, the physical layer 910 is a single material, such as air and a metal plate; in some embodiments, the physical layer 910 is a non-single material, such as a circuit board or a metal circuit layer, but is not limited thereto.

[0058] Please refer to Figure 1 and Fig. 9B , taking the detection position P1 as an example, for the reflected electromagnetic wave R 11 For example, the first medium is air, the second medium is the film layer 800, and the first interface F1 (ie, the first reflection surface) is the interface between the air and the film layer 800; for the reflected electromagnetic wave R 21 For example, the first medium is the film layer 800, and the second medium is the silicon layer 920, and the second interface F2 (ie, the second reflection surface) is the interface between the film layer 800 and the silicon layer 920; for the reflected electromagnetic wave R 31 In particular, the first medium is the silicon layer 920 , the second medium is the physical layer 910 , and the third interface F3 (ie, the third reflection surface) is the interface between the silicon layer 920 and the physical layer 910 .

[0059] Please refer to the following Table 1, the physical layer 910 is air, and according to the relevant data of the above five positions (ie, positions P1, P2, P3, P4, and P5).

[0060] Table 1

[0061]

[0062] Fig. 10A It is a schematic diagram of the implementation of the method for detecting the size parameters of the film layer of the present invention. Fig. 10B It is a schematic diagram of the method for detecting the size parameters of the film layer of the present invention expressed in the time domain. Fig. 10C FIG. 1 is a schematic diagram of the method for detecting the size parameters of the film layer of the present invention in the frequency domain. Fig. 10A The sample 1000 (eg, a semiconductor package) may include a metal layer 1010, and the metal layer 1010 is covered by the film layer 800. Fig. 10B The vertical axis of the waveform diagram is the reflection intensity obtained by the receiving light guide mirror 400, the receiver 600, and the data processing unit 700, and the horizontal axis is time, which represents the reflected electromagnetic wave R corresponding to the first interface F1 and the second interface F2. 11 and R 21 The two positive peaks in the waveform correspond to the reflected electromagnetic waves R corresponding to the first interface F1 and the second interface F2. 11 and R 21 The reflection intensity of the electromagnetic wave R 11 and R 21 , and a refractive index (n) of the film layer 800, the thickness of the film layer 800 (ie, step S130) can be calculated to be 333.281 μm. Fig. 10C The vertical axis of the waveform in the figure represents the frequency domain signal strength (R), and the horizontal axis represents the frequency. The frequency domain can be composed of Fig. 10B The time domain is obtained through discrete Fourier transform. For example, the frequency domain signal intensity (R) is composed of frequency (f), light speed (c), thickness (d) and film refractive index (n). The mathematical formula can be simplified as R≈cos(4πfnd / c) (the detailed mathematical formula can be referred to the textbooks related to thin film optics). Substituting a refractive index of the film layer can calculate a thickness of the film layer.

[0063] Please refer to Table 2 below for FIG. 10A to FIG. 10C The frequency domain of the film layer 800 is calculated in different frequency ranges. As shown in Table 2, the frequency domain range of 0.01 to 4 terahertz is a better choice, and the difference between the frequency domain and time domain thickness results is the smallest.

[0064] Table 2

[0065]

[0066] exist Figure 6 When the size parameter is a relative distance and is calculated in the time domain, step S130 is divided into the following steps: a time point (T 11 ) and a time reference point (T0), and a refractive index (n0) of the first medium to calculate a relative distance of the first interface of the film layer (step S1305); record the relative distance of the test point (step S1306); move to the next test point (step S1307); and calculate a surface profile of the first interface and the second interface through the relative distances measured at the N test points (step S1308). 9A to 9C For illustration, the waveforms are from the reflected electromagnetic waves R corresponding to the first interface F1, the second interface F2 and the third interface F3. 11 , R 21 , R 31 Taking the first position (P1) as an example, the reflected electromagnetic wave R 11 , R 21 and R 31 The times corresponding to the time reference point T0 are T 11 , T 21 and T 31 , assuming T0 <T 11 <T 21 <T 31 , and the first medium is air (refractive index is 1), the film layer refractive index is n, and the silicon layer refractive index is n s , the first medium is air, which can pass through the relative distance formula Obtain the surface profile composed of a first interface relative distance point cloud from the first position to the fifth position (P1, P2, P3, P4, P5); in addition, the refractive index n of the transparent film layer and the relative distance formula Obtain the surface contour composed of the relative distance point cloud from the first position to the fifth position (P1, P2, P3, P4, P5) to form a second interface; it can also be obtained through the relative distance The surface profile formed by the relative distance point cloud of the third interface from the first position to the fifth position (P1, P2, P3, P4, P5) is obtained. In summary, when measuring a single chip, the surface profile of the single chip is detected by the above method. As described above, the point cloud data (such as x, y, z coordinate values) from the first interface to the third interface can usually be used to calculate the parameters of the surface profile such as coplanarity, warpage, or curvature.

[0067] Please refer to Table 3 below for 9A to 9C And based on the data of the relative distances of the above five positions (ie, positions P1, P2, P3, P4, and P5).

[0068] Table 3

[0069]

[0070] Please refer to Fig.11A and Fig. 11B When multiple chips are measured and each single chip corresponds to each test point, and the multiple test points are not on the same straight line, it can be detected whether the multiple chips are on the same horizontal plane, that is, a surface profile formed by the surface of the multiple chips (that is, the second interface) is measured.

[0071] Please also refer to Figure 1 , Figure 6 , Figure 7 , Fig.11A ,as well as Fig. 11B According to the above-mentioned film size parameter detection method S100 and film size parameter detection system 100, since the irradiation light guide mirror 300 has one or two focusing concave mirrors (not shown) for converging the incident electromagnetic wave L2 and / or controlling the incident angle θ, that is, the light spot of the incident electromagnetic wave L2 incident on the surface of the film layer 800 is smaller than the surface of the film layer 800, therefore, different grains on the sample can be incident and detected on the surface of the film layer 800, a total of N grains, and the N grains are not all in a straight line. For example, in Fig.11A The sample 1100 in FIG. 1 includes a silicon layer 920, the silicon layer 920 is covered by a membrane layer 800, and a physical layer 910 is located below the silicon layer 920. Fig.11A and Fig. 11B The physical layer 910 of the embodiment of the present invention is exemplified by metal. Fig. 11B The vertical axis of the waveform diagram in FIG. 1 is the reflection intensity obtained by the receiving light guide mirror 400, the receiver 600, and the data processing unit 700, and the horizontal axis is time, which represents the reflected electromagnetic wave R corresponding to the first interface F1, the second interface F2, and the third interface F3. 11 , R 21 , R 31 The reflected electromagnetic waves of different grains corresponding to their respective first interface F1, second interface F2 and third interface F3 are R 11 (k), R 21 (k) and R 31 (k), where k is the identification number of each grain, k = 1, 2, ..., N. Therefore, the reflected electromagnetic wave R of the first grain 11 (1) R 21 (1) and R 31(1) The times corresponding to the time reference point T0 are T 11 (1) T 21 (1) and T 31 (1); Similarly, the reflected electromagnetic wave R of the Nth grain 11 (N), R 21 (N) and R 31 (N) The time corresponding to each time reference point T0 is T 11 (N), T 21 (N) and T 31 (N). The T of each grain is obtained by testing 11 (N), the surface profile of the first interface can be obtained by a point cloud (such as x, y, z coordinate values); then the T 21 (N), the surface profile of the second interface can be obtained; then, the T 31 (N), the surface profile of the third interface can be obtained. As described above, the point cloud data of each of the first interface to the third interface can usually be used to calculate the parameters of the surface profile such as coplanarity, warpage, or curvature.

[0072] In summary, the film layer size parameter detection method and system of the present invention utilizes an electromagnetic wave within a bandwidth component to irradiate a film layer, such as an extinction film layer or an optical scattering film layer, and obtains a thickness of the film layer based on the reflected electromagnetic wave and the refractive index of the film layer; or, obtains a surface profile of one of the two opposite surfaces of the film layer based on the reflection intensity of the first interface (F1) and a refractive index of the first medium; or obtains a surface profile of the other of the two opposite surfaces of the film layer based on the reflection intensity of the second interface (F2) and a refractive index of the film layer; similarly, obtains a surface profile of one of the two opposite surfaces of the silicon layer based on the reflection intensity of the third interface (F3) and a refractive index of the silicon layer. Moreover, an incident angle of the electromagnetic wave incident on the film layer can be adjusted and controlled through an optical axis setting mechanism. Furthermore, the electromagnetic wave incident on the film layer is focused (i.e., the light spot is reduced) through one or two focusing concave mirrors of an irradiation light guide mirror to detect small-volume semiconductor packages or chips, thereby avoiding an averaging distortion effect caused by a detection area that is too large.

[0073] What is disclosed in this case is a preferred embodiment. Any partial changes or modifications that are derived from the technical ideas of this case and are easily inferred by people familiar with the art are within the scope of the patent rights of this case.

Claims

1. A method for detecting the size parameters of a film layer, characterized in that: include: emitting an electromagnetic wave within a bandwidth from a signal transmitter in a first medium; Measuring a first reflection intensity of a first interface of the film layer and a first reflection intensity of a second interface of the film layer at a test point, wherein the first interface is located between the first medium and the film layer, the second interface is located on the opposite side of the first interface, and the electromagnetic wave contacts the first interface and the second interface in sequence; as well as A size parameter is obtained from the first reflection intensity of the first interface, the first reflection intensity of the second interface and a refractive index of the film layer.

2. The method for detecting the size parameters of a film layer according to claim 1, characterized in that: The electromagnetic wave is at least one of visible light, near infrared light, short-wave infrared light and megahertz wave.

3. The method for detecting the size parameters of a film layer according to claim 1, characterized in that: The film layer is a dielectric layer.

4. The method for detecting the size parameters of a film layer according to claim 1, characterized in that: The interface reflection intensity is a time domain intensity signal or a frequency domain interference signal.

5. The method for detecting the size parameters of a film layer according to claim 1, characterized in that: The step of calculating the size parameter from the first reflection intensity of the first interface, the first reflection intensity of the second interface and the refractive index of the film layer comprises: Calculating a thickness of the film layer from a time interval between a time point of the first reflection intensity of the first interface and a time point of the first reflection intensity of the second interface and a refractive index of the film layer, the size parameter being the thickness; and The thickness at the test point is recorded.

6. The method for detecting the size parameters of a film layer according to claim 5, characterized in that: After the step of recording the thickness of the test point, the method further comprises: Move to the next test point, then return to the step of emitting the electromagnetic wave within the bandwidth from the signal transmitter in the first medium and repeat a predetermined number of times to form a plurality of test points; and After the predetermined number of times, an average value, a maximum value, a minimum value, or a standard deviation of each thickness of the multiple test points is calculated, and the dimensional parameters are the average value, the maximum value, the minimum value and the standard deviation of each thickness.

7. The method for detecting the size parameters of a film layer according to claim 1, characterized in that: The step of calculating the size parameter from the first reflection intensity of the first interface, the first reflection intensity of the second interface and the refractive index of the film layer comprises: The thickness of the film layer is obtained by calculating the first reflection intensity of the first interface of the film layer and the first reflection intensity of the second interface through discrete Fourier transformation into a frequency domain signal intensity at different frequencies formed by a frequency domain calculation and a refractive index of the film layer, and the size parameter is the thickness; and The thickness at the test point is recorded.

8. The method for detecting the size parameters of a film layer according to claim 7, characterized in that: After the step of recording the thickness of the test point, the method further comprises: Move to the next test point, then return to the step of emitting the electromagnetic wave within the bandwidth from the signal transmitter in the first medium and repeat a predetermined number of times to form a plurality of test points; and After the predetermined number of times, an average value, a maximum value, a minimum value, or a standard deviation of each thickness of the multiple test points is calculated, and the dimensional parameters are the average value, the maximum value, the minimum value, and the standard deviation of each thickness.

9. The method for detecting the size parameters of a film layer according to claim 1, characterized in that: The step of calculating the size parameter from the first reflection intensity of the first interface, the first reflection intensity of the second interface and the refractive index of the film layer comprises: A relative distance of the first interface of the film layer is calculated from a time interval between a time point of the first reflection intensity of the first interface and a time reference point and a refractive index of the first medium, and a relative distance of the second interface of the film layer is calculated from the time point of the first reflection intensity of the first interface and another time interval between a time point of the first reflection intensity of the second interface and the time reference point and the refractive index of the film layer; Recording the relative distances between the two test points; Move to the next test point, then return to the step of emitting the electromagnetic wave within the bandwidth from the signal transmitter in the first medium and repeat a predetermined number of times to form a plurality of test points; and After the predetermined number of times, a surface profile of the first interface and the second interface is calculated through the relative distances measured by the plurality of test points, and the size parameter is the surface profile.

10. The method for detecting the size parameters of a film layer according to claim 9, characterized in that: The surface profile includes coplanarity, warp or curvature.

11. A film size parameter detection system, characterized in that: include: A signal transmitter for transmitting an electromagnetic wave with a bandwidth component; an irradiation light guide mirror, the electromagnetic wave irradiates the irradiation light guide mirror to form an incident electromagnetic wave, the incident electromagnetic wave is incident on a film layer at an incident angle, and generates a reflected electromagnetic wave; A receiving light guide mirror, used for receiving the reflected electromagnetic wave; an optical axis setting mechanism connected to the film layer, the irradiation light guide mirror, and one of the receiving light guide mirrors, so as to adjust the deflection of the film layer, the irradiation light guide mirror, or the receiving light guide mirror, thereby controlling the incident angle between an optical axis of the incident electromagnetic wave and the film layer; a receiver connected to the receiving light guide mirror, and used to measure a reflection intensity of the reflected electromagnetic wave received by the receiving light guide mirror; and A data processing unit is electrically connected to the receiver and is used to calculate a size parameter from the reflection intensity and a refractive index of the film layer.

12. The film layer size parameter detection system according to claim 11, characterized in that: The electromagnetic wave is at least one of visible light, near infrared light, short-wave infrared light and megahertz wave.

13. The film layer size parameter detection system according to claim 11, characterized in that: The film layer is a dielectric layer.

14. The film layer size parameter detection system according to claim 11, characterized in that: The signal transmitter includes a light source and a high-frequency electromagnetic wave converter. The light source provides the electromagnetic wave to the high-frequency electromagnetic wave converter, and the high-frequency electromagnetic wave converter provides the electromagnetic wave with the bandwidth component.

15. The film layer size parameter detection system according to claim 11, characterized in that: The illumination light guide mirror has at least one focusing concave mirror for converging the incident electromagnetic wave and / or controlling the incident angle.

16. The film layer size parameter detection system according to claim 11, characterized in that: The dimensional parameter includes a thickness or a surface profile.

17. The film layer size parameter detection system according to claim 16, characterized in that: The surface profile includes coplanarity, warp or curvature.

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