Flexible wrapped tactile perception device

Abstract

The invention provides a touch sensing device with a flexible package. The touch sensing device comprises a semiconductor wafer, a touch sensing structure and a flexible package structure, the tactile sensing structure comprises a force transmission structure and a tactile sensing micro-nano structure array, and the tactile sensing micro-nano structure array comprises a plurality of tactile sensing micro-nano structures; a plurality of metal regions are formed on a top metal layer of the semiconductor wafer, a plurality of first metal regions of the plurality of metal regions serve as an electrode array, and the electrode array comprises a plurality of electrodes; each electrode of the plurality of electrodes corresponds to one of the plurality of tactile sensing micro-nano structures; the flexible wrapping structure covers the touch sensing device; the flexible wrapping structure has a contour, and the contour enables the touch sensing device to have a bionic body or a local shape of the bionic body; the plurality of electrodes and the tactile sensing structure form a plurality of first capacitors.

Description

Technical Field

[0001] The present application relates to sensing technology, and in particular, to a tactile sensing device with a flexible package. Background Art

[0002] Touch is a general term for the ability to perceive one or more mechanical stimuli such as contact, sliding, and pressure. In some cases, it is also desired that touch includes the perception of heat, cold, proximity, and light. Therefore, touch in a narrow sense can only refer to the perception of force on the contact surface, while touch in a broad sense includes the perception of physical characteristics or events such as pressure, sliding, contact, heat, cold, and proximity. Perceiving relative quantities without perceiving absolute values ​​is also one of the characteristics of touch. For example, touch requires the perception of contact between the skin and external objects (including the magnitude of pressure), but there is no need to know the specific value of the object acting on the skin. This requires the tactile sensor to perceive changes in physical quantities without knowing their absolute values.

[0003] Most animals have tactile receptors all over their bodies, like human skin, which is located on the surface of the human body and spreads all over the body. For example, most parts of the skin can sense acupuncture, thanks to the dense distribution of tactile receptors in the skin. Different parts of the skin have different tactile sensations to different objects, because the number and types of different tactile receptors are distributed differently.

[0004] The principles of tactile sensors mainly include resistance, capacitance, piezoelectricity, thermoelectromagnetic, magnetoelectricity, force, light, ultrasound and resistive strain.

[0005] Tactile sensors generally include two parts: perception (also called sensing) and information processing. The perception part converts the physical quantity to be sensed into, for example, an electrical signal, and the information processing part processes the electrical signal to obtain the value of the physical quantity to be sensed. Tactile sensors can also include a communication unit and an actuator. The communication unit is used to exchange perception results with the outside, receive external configuration or control, and is used for networking to enhance perception capabilities using distributed sensor technology. The actuator generates corresponding actions based on the perception results, such as driving fingers to hold objects or avoid danger.

[0006] In the "Notice of the General Office of the Ministry of Industry and Information Technology on Organizing the 2023 Future Industry Innovation Task Announcement" issued in September 2023 (available from https: / / wap.miit.gov.cn / zwgk / zcwj / wjfb / tz / art / 2023 / art_b159eaaf51484ac79405c8bb7b70f591.html), a number of tasks were proposed in the "Humanoid Robot Announcement Task List".

[0007] (1) “Force Sensor” Task: To meet the needs of humanoid robots to accurately obtain tactile mechanical signals of driving joints and extremities, breakthroughs in key technologies such as stable and reliable force sensor structure design and manufacturing, intelligent signal processing and analysis, multi-information intelligent recognition and model analysis; develop a series of high-performance, low-cost, intelligent new force sensors; develop low-cost, large-scale sensor production and manufacturing methods, and promote the industrial application of new force sensors in humanoid robots. Expected goal: By 2025, the design and manufacture of humanoid robot series force sensors will be completed to meet the needs of driving joints, fingers, soles and other extremity force measurement, and actual applications will be carried out in humanoid robots. The sensor adopts a low-cost, high-performance design, with an accuracy of 0.5% FS and a response time better than 0.03s. It has intelligent information collection and processing capabilities, and improves the intelligence level of force sensors.

[0008] (2) “MEMS attitude sensor” task: To meet the demand for high-performance, miniaturized attitude sensors for humanoid robot attitude control, breakthroughs in key technologies such as sensor miniaturization structure design, gyroscope high-precision processing technology, and intelligent response attitude solution; research and develop high-performance attitude sensors based on MEMS inertial devices; research methods to reduce the volume and weight of the sensor system, reduce power consumption, and improve the sensor's ability to resist vibration, jitter, and transmission performance; develop low-cost, large-scale sensor production and manufacturing methods, and promote the industrial application of new MEMS attitude sensors in humanoid robots. Expected goals: By 2025, the development of high-performance, low-cost MEMS attitude sensors will be completed, with strong anti-vibration and jitter performance, a static accuracy of 0.1° for pitch and roll angles, and a zero bias stability (1σ, 10s smoothing) of no less than 0.3° / h. MEMS attitude sensors will have strong robustness and intelligent stabilization algorithms.

[0009] (3) “Tactile sensor” task: Based on the ability of humanoid robot dexterous hands to use tools, operate equipment, sort items, and perform high-precision assembly, tactile sensors are installed in the palm of the dexterous hand to sense the position, hardness, texture and other characteristics of the operation target, and improve the intelligent operation ability of the dexterous hand. Develop small-volume, high-reliability, and high-stability tactile sensors for humanoid robot hands to meet the needs of humanoid robot dexterous hands for perception, operation, and interaction, improve the level of independent design and development of new tactile sensors, and promote the industrial application of tactile sensors. Expected goals: By 2025, the development of small-volume, high-reliability, and high-stability hand tactile sensors will be completed, and the sensor array density of fingertips, finger pulps, and palms will be 1mm×1mm (thickness ≤0.3mm); the force detection range will be 0.1N / cm2~240N / cm2(10g / cm2~24kg / cm2)±5%; the minimum detection force will be 10g.

[0010] For the tactile sensor unveiling task, potential candidate technologies for tactile sensors for humanoid robot hands include MEMS pressure sensors, flexible tactile sensors, and six-dimensional force / torque sensors.

[0011] MEMS (Micro-Electro-Mechanical System) pressure sensors are high-precision sensors that combine microelectronics technology with precision machining technology. Their small size, high precision, and high cost-effectiveness make them a potential competitor for humanoid robot hand tactile sensors. The article "Detailed Explanation of MEMS Pressure Sensors for Humanoid Robots: Robots May Open Up New Scenarios" introduces a variety of MEMS mechanical sensors (from https: / / www.sohu.com / a / 763634967_121838863 Available). MEMS sensors rely on advanced microfabrication technology, resulting in high R&D and manufacturing costs.

[0012] The representative of flexible tactile sensors is TACTARRAY tactile pressure sensor (from https: / / pressureprofile.com / tactarray / conformable-tactarray Available). It is supported by soft conductive cloth and can directly capture the pressure distribution between two objects in direct contact. Due to the limitations of the conductive cloth material itself, its spatial resolution is at the millimeter level and is difficult to reduce further.

[0013] The six-dimensional force / torque sensor can accurately measure the absolute value of the force in the three directions of X, Y, and Z and the torque in the three dimensions of Fx, Fy, and Fz. The six-dimensional force / torque sensor usually requires a complex loading calibration process to achieve accurate measurement of force within the full range. The manufacturing and application deployment calibration process of the six-dimensional force / torque sensor is relatively complicated and leads to high costs, ranging from thousands to hundreds of thousands of yuan. It is usually deployed and installed at key locations where force measurement is required at the end of the robot's limbs, such as the base, joints, and soles.

[0014] In Chinese patent application CN108362427A (a contact sensor, electronic skin and intelligent robot with a multifunctional layer), a tactile sensor based on a multifunctional layer is provided, and the volume of a single tactile sensor is reduced to 1 mm. 3 -100m 3 However, due to the line width and thickness of the printed circuit board carrying the sensor, the material thickness of the sensing capacitor plate, and the package thickness, the thickness of a single sensor is difficult to meet the measurement accuracy requirements of the task list.

[0015] Moreover, when a large number of sensor units of a sensor array are to be deployed in a limited space, providing electrical connection channels for each sensor unit also becomes a challenge. For example, to deploy hundreds of sensor units within a 1 square centimeter range, hundreds or even thousands of leads need to be drawn out. The arrangement, isolation, mutual anti-interference and selective connectivity of these leads have become obstacles in engineering practice.

[0016] A radio frequency micro-capacitor fingerprint acquisition chip is provided in Chinese patent application CN103870817B (A radio frequency micro-capacitor fingerprint acquisition chip and acquisition method). Its structure uses the top metal of the chip as the sensing electrode of the sensor capacitor, the user's finger as the other electrode of the sensor capacitor, the internal metal layer of the chip as the correction electrode of the correction capacitor, and the sensing electrode as the other electrode of the correction capacitor. In terms of operating principle, the fingerprint texture information on the surface of the finger is obtained by generating a radio frequency signal to charge and discharge the sensing capacitor and the correction capacitor in sequence. However, the principle of the fingerprint acquisition chip is to detect the valley line and valley ridge capacitance difference formed by the valley line and valley ridge of the fingerprint relative to the sensing electrode, and it is not suitable for sensing contact, the size / direction of contact pressure, point contact (such as acupuncture), and it is even more unable to sense objects that are close but not in contact.

[0017] In Chinese patent application CN112978671A (force measurement and touch sensing integrated circuit device), it is provided that PMUT (piezoelectric micromechanical ultrasonic transducer) and PMEF (piezoelectric micromechanical force measuring element) are simultaneously manufactured in a MEMS structure to realize an integrated circuit device capable of simultaneously detecting touch and measuring applied force. The MEMS structure serves as a sensor sensing module, while the integrated circuit chip is responsible for analog-to-digital conversion and signal processing of the collected signal. The MEMS structure and the integrated circuit chip are stacked, and each realizes its own predetermined function. By stacking the MEMS structure and the integrated circuit chip, the transmission distance of the analog signal between the sensor sensing module and the signal processing circuit is reduced, thereby reducing the interference and attenuation of the transmission process of the analog signal. However, the MEMS structure itself introduces a high manufacturing cost, and for the multiple PMUTs and PMEFs in the sensor sensing module, each needs the corresponding electrodes to be connected and conducted one by one with each channel of the integrated circuit crystal through the inter-wafer packaging, and each channel needs to be insulated from each other, and the packaging accuracy requirements are very high. The increase in the channels for transmitting signals between chips also leads to a decrease in the overall reliability of the device, thereby further increasing the difficulty and cost of packaging.

[0018] An analog signal router is provided in the Chinese patent application with application number 202110957486.8, an analog signal router for transmitting analog signals across chips is provided in the Chinese patent application with application number 202110956226.9, an R-SpiNNaker chip is provided in the Chinese patent application with application number 202110956246.6, an R-SpiNNaker system is provided in the Chinese patent application with application number 202110957228.X, a pulse neural network based on the R-SpiNNaker system is provided in the Chinese patent application with application number 202110956273.3, a distributed capacitive sensor system is provided in the Chinese patent application with application number 202110964601.4, and a distributed capacitive sensor system is provided in the Chinese patent application with application number 202110957229.4. In the Chinese patent application with application number 202210309501.2, an event processing method of a neural network system is provided, in the Chinese patent application with application number 202210309297.4, a method for tracking events of a neural network system is provided, in the Chinese patent application with application number 202210303160.8, a similar perception system is provided, in the Chinese patent application with application number 202210303165.0, a collaborative computing system is provided, in the Chinese patent application with application number 202223551407.2, a tactile sensor, an electronic skin, and a pulse detection device are provided, in the Chinese patent application with application number 202210320984.6, a collaborative computing system provided by a basic perception unit is provided, and in the Chinese patent application with application number 202210309298.9, a method for constructing a neural network system based on events is provided. These Chinese patent applications provide signal processing and capacitance detection technology of capacitive sensors, which are used as background technology of this application, and this application quotes the full text thereof, and incorporates the full text thereof herein. Summary of the invention

[0020] It is desirable to provide a hand tactile sensor for a humanoid robot that can simultaneously meet a sufficiently high sensor array density, is suitable for realizing tactile perception of fingertips, finger pulps and / or palm surfaces, can perceive the posture, hardness, texture and other characteristics of the operation target, has a small size, high reliability, high stability, and is suitable for large-scale industrial production and industrial application. The tactile sensor chip provided in the embodiments of the present application is expected to solve one or more of the above technical problems.

[0021] According to a first aspect of the present application, a tactile sensor chip is provided, comprising a semiconductor wafer and a tactile sensing structure as a component of the chip package; the tactile sensing structure comprises a tactile sensing micro-nano structure array, the tactile sensing micro-nano structure array comprises a plurality of tactile sensing micro-nano structures; the tactile sensing micro-nano structure is deformed under the action of a force exerted on the tactile sensing structure by a touch to be sensed; a top metal layer of the semiconductor wafer forms a plurality of metal regions, a plurality of first metal regions of the plurality of metal regions serve as an electrode array, the electrode array comprises a plurality of electrodes; each electrode of the plurality of electrodes corresponds one-to-one to each tactile sensing micro-nano structure of the plurality of tactile sensing micro-nano structures; or every N electrodes of the plurality of electrodes form a group, each electrode group corresponds one-to-one to each tactile sensing micro-nano structure of the plurality of tactile sensing micro-nano structures, wherein N is a positive integer greater than or equal to 2; the plurality of metal regions of the top metal layer also include a second metal region that does not belong to the plurality of first metal regions; in Under the action of the force of the touch to be sensed on the tactile sensing structure, one or more tactile sensing micro-nano structures among the multiple tactile sensing micro-nano structures are deformed, so that the spatial shape between the deformed tactile sensing micro-nano structure and the corresponding electrode or electrode group is changed; the MOS layer and multiple intermediate layers of the semiconductor chip form an electric switch array and a circuit for measuring capacitance; the multiple electrodes and the tactile sensing structure form multiple first capacitors, wherein each electrode of the multiple electrodes serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form another plate of the first capacitor; the circuit for measuring capacitance is used to measure the capacitance values ​​of the multiple first capacitors; the multiple electrodes and the second metal area are coupled to the switch array; the switch array is connected to the circuit for measuring capacitance; the chip packaging also includes a packaging substrate and / or a lead frame, the packaging substrate and / or the lead frame are used to carry the semiconductor chip, and the packaging substrate and / or the lead frame are provided with pins of the chip.

[0022] According to the tactile sensor chip of the first aspect of the present application, a first isolation layer is included between the top metal layer of the semiconductor wafer and the tactile sensing structure, the first isolation layer serves as a dielectric between the plates of the multiple first capacitors, and the projection of the first isolation layer in a first direction overlaps with the multiple first metal regions, wherein the first direction is perpendicular to the main plane of the semiconductor wafer.

[0023] According to the tactile sensor chip of the first aspect of the present application, a piezoelectric material film is included between the top metal layer of the semiconductor wafer and the tactile sensing structure, and the piezoelectric material film serves as a dielectric between the plates of the multiple first capacitors.

[0024] According to the tactile sensor chip of the first aspect of the present application, the piezoelectric material film includes a first surface and a second surface; the first surface of the piezoelectric material film faces the tactile sensing structure; the second surface of the piezoelectric material film faces the top metal layer; the second surface of the piezoelectric material film includes a plurality of charge sensing electrodes, and the plurality of charge sensing electrodes correspond one-to-one to the plurality of electrodes of the electrode array.

[0025] The tactile sensor chip according to the first aspect of the present application further includes an adhesive film; the adhesive film bonds the second surface of the piezoelectric material film to the top metal layer; the adhesive film includes a plurality of holes, and the plurality of holes of the adhesive film correspond one-to-one to the plurality of electrodes of the electrode array.

[0026] According to the tactile sensor chip of the first aspect of the present application, there is a gap between the charge sensing electrode of the piezoelectric material film and the corresponding electrode of the electrode array; the size of the gap depends on the thickness of the adhesive film.

[0027] According to the tactile sensor chip of the first aspect of the present application, the piezoelectric material film is deformed under the action of the force of the touch to be sensed on the piezoelectric material film so that at the position where the force acts, the charge sensing electrode of the piezoelectric material film contacts and electrically connects with the electrode corresponding to it.

[0028] According to the tactile sensor chip of the first aspect of the present application, if there is a gap between the charge induction electrode of the piezoelectric material film and the electrode of the electrode array corresponding thereto, the capacitance formed between the first surface of the piezoelectric material film and the charge induction electrode and the capacitance formed between the charge induction electrode and the electrodes of the plurality of electrodes are connected in series to form a first capacitance.

[0029] According to the tactile sensor chip of the first aspect of the present application, if the charge induction electrode of the piezoelectric material film contacts the electrode of the electrode array corresponding to it, the charge induction electrode of the piezoelectric material film serves as one of the plates of the first capacitor.

[0030] According to the tactile sensor chip of the first aspect of the present application, the first surface of the piezoelectric material film includes a surface electrode, and the surface electrode is electrically connected to the second metal region.

[0031] According to the tactile sensor chip of the first aspect of the present application, the surface electrode includes one or more areas isolated from each other; the second metal area of ​​the top metal layer includes multiple metal areas; each area of ​​the surface electrode is electrically connected to one of the multiple metal areas of the second metal area.

[0032] According to the tactile sensor chip of the first aspect of the present application, a circuit for measuring voltage is also formed in the MOS layer and multiple intermediate layers of the semiconductor wafer; and the switch array is also used to connect the multiple first metal areas to the circuit for measuring voltage.

[0033] According to the tactile sensor chip of the first aspect of the present application, the switch array connects the plurality of first metal regions to the circuit for measuring voltage and the circuit for measuring capacitance in a time-sharing manner.

[0034] According to the tactile sensor chip of the first aspect of the present application, the top metal layer, the switch array, the circuit for measuring capacitance and the circuit for measuring voltage are manufactured on the semiconductor wafer by an integrated circuit chip manufacturing process.

[0035] According to the tactile sensor chip of the first aspect of the present application, when the force of the touch to be sensed acts on the piezoelectric material film, a first charge corresponding to the force appears on the charge sensing electrode of the piezoelectric material film at the position where the force acts, and the circuit for measuring voltage is used to measure the first charge.

[0036] According to the tactile sensor chip of the first aspect of the present application, if there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the electrode array corresponding thereto, there is no electrical connection between the charge sensing electrode of the piezoelectric material film and the circuit for measuring voltage.

[0037] According to the tactile sensor chip of the first aspect of the present application, the chip comprises a second isolation layer, and the second isolation layer covers the outside of the tactile sensing structure relative to the chip to protect the tactile sensing structure.

[0038] According to the tactile sensor chip of the first aspect of the present application, the top metal layer further includes a plurality of third metal regions that do not belong to the plurality of first metal regions, and the plurality of third metal regions are connected to pins on a packaging substrate of the chip.

[0039] According to the tactile sensor chip of the first aspect of the present application, the top metal layer of the semiconductor wafer is directly electrically connected to one or more layers of the plurality of intermediate layers through vias in the semiconductor wafer.

[0040] According to the tactile sensor chip of the first aspect of the present application, there is no MEMS between the top metal layer and the plurality of intermediate layers.

[0041] According to the tactile sensor chip of the first aspect of the present application, the second metal region is electrically connected to the tactile sensing structure.

[0042] According to the tactile sensor chip of the first aspect of the present application, each of the plurality of electrodes is connected to the switch array with one or more layers of the plurality of intermediate layers through a via in the semiconductor wafer.

[0043] According to the tactile sensor chip of the first aspect of the present application, each of the multiple tactile sensing micro-nano structures is electrically connected to each other through the tactile sensing structure; the second metal area of ​​the top metal layer is electrically connected to the multiple tactile sensing micro-nano structures.

[0044] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure includes a first part and a second part; the second metal area of ​​the top metal layer includes multiple metal areas; the first part is electrically connected to a part of the multiple metal areas of the second metal area, and the second part is electrically connected to another part of the multiple metal areas of the second metal area; there is no electrical connection between the first part and the second part.

[0045] According to the tactile sensor chip of the first aspect of the present application, the first part and the second part respectively include non-overlapping parts of the multiple tactile sensing micro-nano structures; or the first part includes the multiple tactile sensing micro-nano structures, and the second part includes a conductive structure isolated from the multiple tactile sensing micro-nano structures.

[0046] According to the tactile sensor chip of the first aspect of the present application, the first part and the second part form a second capacitor, wherein the first part and the second part respectively serve as one of the two plates of the second capacitor; or the first part and / or the second part are used to form a second capacitor, wherein the first part and / or the second part serve as one of the plates of the second capacitor.

[0047] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure includes multiple parts; the multiple parts of the tactile sensing structure respectively include non-overlapping parts of the multiple tactile sensing micro-nano structures; there is no electrical connection between the multiple parts of the tactile sensing structure; the second metal area of ​​the top metal layer includes multiple metal areas; the multiple parts of the tactile sensing structure are respectively electrically connected to one of the multiple metal areas.

[0048] According to the tactile sensor chip of the first aspect of the present application, the multiple tactile sensing micro-nano structures are located in the same plane and are arranged in a two-dimensional structure including rows and columns.

[0049] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing micro-nano structure includes a first raised curved surface structure and a second raised curved surface structure relative to each other; the bottom surfaces of the first raised curved surface structure and the second raised curved surface structure are relative to each other.

[0050] According to the tactile sensor chip of the first aspect of the present application, the bottom surface area of ​​the first raised curved surface structure is larger than the bottom surface area of ​​the second raised curved surface structure; and / or the first raised curved surface structure and / or the second raised curved surface structure are hollow.

[0051] According to the tactile sensor chip of the first aspect of the present application, the surface of the first raised curved surface structure has a hollow structure, and the surface of the second raised curved surface structure does not have a hollow structure.

[0052] According to the tactile sensor chip of the first aspect of the present application, a surface of the second raised curved structure abuts against the first isolation layer.

[0053] According to the tactile sensor chip of the first aspect of the present application, the projection in the first direction of the position where the surface of the second raised curved structure contacts the first isolation layer is located at the geometric center of one electrode or one electrode group of the plurality of electrodes.

[0054] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure further includes a flexible layer, and the flexible layer covers the tactile sensing micro-nanostructure array outside the chip relative to the chip.

[0055] According to the tactile sensor chip of the first aspect of the present application, the vertex of the surface of the first raised curved structure of each of the tactile sensing micro-nano structures also includes a protrusion, and the protrusion extends into the interior of the flexible layer, so that when the touch to be sensed acts on the tactile sensing structure, the deformation of the flexible layer drives the tactile sensing micro-nano structure where the protrusion is located to deform through the protrusion.

[0056] According to the tactile sensor chip of the first aspect of the present application, the deformation of the tactile sensing micro-nano structure where the protrusion is located is driven by the protrusion, which is related to the magnitude and / or direction of the force of the touch to be sensed on the tactile sensing structure; or the tactile sensing micro-nano structure where the protrusion is located is driven by the protrusion to deform, so that the distances from the second raised curved surface structure of the tactile sensing micro-nano structure where the protrusion is located to each electrode of the corresponding electrode group are not all the same.

[0057] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure further comprises an associated structure for connecting adjacent tactile sensing micro-nano structures; the associated structure is conductive; the associated structure comprises a plurality of beams and a plurality of holes; wherein,

[0058] The multiple beams are arranged in rows and columns, each of the multiple beams extends in the plane direction of the tactile sensing micro-nanostructure array, and is used to connect adjacent tactile sensing micro-nanostructures; each of the multiple beams is arched, and the arch bulges in the first direction; or each of the multiple holes is arranged in rows and columns, each hole is surrounded by a group of beams among the multiple beams, and each tactile sensing micro-nanostructure is surrounded by a group of holes among the multiple holes.

[0059] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure is a metal containing titanium.

[0060] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing micro-nano structure includes a first raised curved surface structure and a second raised curved surface structure relative to each other; the bottom of the second raised curved surface structure is arranged on the top of the first raised curved surface structure.

[0061] According to the tactile sensor chip of the first aspect of the present application, the bottom surface area of ​​the first raised curved surface structure is larger than the bottom surface area of ​​the second raised curved surface structure; and / or the first raised curved surface structure and / or the second raised curved surface structure are hollow.

[0062] According to the tactile sensor chip of the first aspect of the present application, the top of the second raised curved surface structure abuts against the first isolation layer.

[0063] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure also includes an associated structure for connecting adjacent tactile sensing micro-nano structures; the associated structure is conductive; the associated structure includes a plurality of beams and a plurality of holes; wherein the plurality of beams are arranged in rows and columns, each of the plurality of beams extends in the plane direction where the tactile sensing micro-nano structure array is located, and is used to connect adjacent tactile sensing micro-nano structures; each of the plurality of holes is arranged in rows and columns, each hole is surrounded by a group of beams among the plurality of beams, and each tactile sensing micro-nano structure is surrounded by a group of holes among the plurality of holes.

[0064] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure is conductive silicone.

[0065] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure also includes a flexible layer; the tactile sensing micro-nano structure includes a second raised curved surface structure; the flexible layer covers the tactile sensing micro-nano structure array outside the chip relative to the chip; the flexible layer is in contact with the bottom surface of the second raised curved surface structure; so that when the touch to be sensed acts on the tactile sensing structure, the deformation of the flexible layer drives one or more tactile sensing micro-nano structures at the deformation position to deform.

[0066] According to the tactile sensor chip of the first aspect of the present application, the minimum spacing between the edges of adjacent electrodes of the plurality of electrodes is 0.1-5 mm; and / or the number of the plurality of electrodes is greater than or equal to 100.

[0067] According to the tactile sensor chip of the first aspect of the present application, the multiple electrodes and / or the second metal area are electrically connected to the switch array; or the multiple electrodes and / or the second metal area are electrically connected to the input end of the semiconductor amplifier, and the output end of the semiconductor amplifier is electrically connected to the switch array; wherein the semiconductor amplifier is formed in the semiconductor wafer; or the multiple electrodes and / or the second metal area are coupled to the input end of the semiconductor amplifier through an electric field, and the output end of the semiconductor amplifier is electrically connected to the switch array; wherein the semiconductor amplifier is formed in the semiconductor wafer.

[0068] According to the tactile sensor chip of the first aspect of the present application, the semiconductor amplifier is a MOS tube, and the input end of the semiconductor amplifier is the gate of the MOS tube.

[0069] According to the tactile sensor chip of the first aspect of the present application, the semiconductor amplifier is formed in a middle layer of the semiconductor wafer.

[0070] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure includes a first supporting portion; the first supporting portion of the tactile sensing structure is located around the tactile sensing micro-nano structure array, and is used to abut the packaging substrate or the lead frame, and together with the packaging substrate or the lead frame form a space for accommodating the semiconductor chip.

[0071] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure includes a second supporting part; the second supporting part of the tactile sensing structure includes a plurality of supporting units, and the supporting units correspond to the tactile sensing micro-nano structures of the plurality of tactile sensing micro-nano structures; each supporting unit abuts the semiconductor wafer and limits the deformation range of the tactile sensing micro-nano structure corresponding thereto.

[0072] According to the tactile sensor chip of the first aspect of the present application, the package includes a fixing structure for fixing the tactile sensing structure to the package substrate or the lead frame around the tactile sensing micro-nano structure array.

[0073] According to the tactile sensor chip of the first aspect of the present application, the projection of each tactile sensing micro-nanostructure in a first direction at least partially overlaps with the corresponding electrode or electrode group, wherein the first direction is perpendicular to the main plane of the semiconductor wafer.

[0074] According to the tactile sensor chip of the first aspect of the present application, the projection of each tactile sensing micro-nanostructure in the first direction covers the corresponding electrode or electrode group; and / or the area of ​​each tactile sensing micro-nanostructure is larger than the corresponding electrode or electrode group.

[0075] According to the tactile sensor chip of the first aspect of the present application, the area of ​​the charge sensing electrode of the piezoelectric material film is larger than the corresponding electrode of the electrode array.

[0076] The tactile sensor chip according to the first aspect of the present application includes a plurality of semiconductor chips; the spatial positions of the plurality of semiconductor chips are adjacent; each electrode of the plurality of electrodes of each of the plurality of semiconductor chips corresponds one-to-one to each tactile sensing micro-nanostructure of the plurality of tactile sensing micro-nanostructures; or every N electrodes of the plurality of electrodes of each of the plurality of semiconductor chips form a group, and each electrode group corresponds one-to-one to each tactile sensing micro-nanostructure of the plurality of tactile sensing micro-nanostructures.

[0077] According to the tactile sensor chip of the first aspect of the present application, a plurality of the semiconductor chips are connected to each other to transmit analog signals and / or digital signals.

[0078] According to the tactile sensor chip of the first aspect of the present application, the projection of the tactile sensing structure in the first direction covers part or all of the plurality of semiconductor wafers.

[0079] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure includes a first part and a second part; the tactile sensor chip includes a first semiconductor wafer and a second semiconductor wafer.

[0080] According to the tactile sensor chip of the first aspect of the present application, the projection of the first part of the tactile sensing structure in the first direction at least partially overlaps with the first semiconductor wafer; the projection of the second part of the tactile sensing structure in the first direction at least partially overlaps with the second semiconductor wafer.

[0081] According to the tactile sensor chip of the first aspect of the present application, the first part is electrically connected to the second metal area of ​​the first semiconductor wafer, and the second part is electrically connected to the second metal area of ​​the second semiconductor wafer; there is no electrical connection between the first part and the second part.

[0082] According to the tactile sensor chip of the first aspect of the present application, the first part and the second part respectively include non-overlapping parts of the multiple tactile sensing micro-nano structures; or the first part includes the multiple tactile sensing micro-nano structures, and the second part includes a conductive structure isolated from the multiple tactile sensing micro-nano structures.

[0083] According to the tactile sensor chip of the first aspect of the present application, the first part and the second part form a second capacitor, wherein the first part and the second part serve as one of the two plates of the second capacitor respectively; or

[0084] The first portion and / or the second portion are used to form a second capacitor, wherein the first portion and / or the second portion serve as one of the plates of the second capacitor.

[0085] According to the tactile sensor chip of the first aspect of the present application, the tactile sensing structure includes multiple parts; the multiple parts of the tactile sensing structure respectively include non-overlapping parts of the multiple tactile sensing micro-nano structures; there is no electrical connection between the multiple parts of the tactile sensing structure; the tactile sensor chip includes multiple semiconductor chips.

[0086] According to the tactile sensor chip of the first aspect of the present application, the projection of each part of the tactile sensing structure in the first direction at least partially overlaps with one of the plurality of semiconductor wafers.

[0087] According to a second aspect of the present application, an electronic device is provided, comprising one or more tactile sensor chips according to the first aspect of the present application.

[0088] According to a third aspect of the present application, a tactile sensor chip is provided, comprising a plurality of semiconductor wafers and a tactile sensing structure as a component of the chip package, wherein the plurality of semiconductor wafers are spatially adjacent to each other; the tactile sensing structure comprises a tactile sensing micro-nano structure array, wherein the tactile sensing micro-nano structure array comprises a plurality of tactile sensing micro-nano structures; the tactile sensing micro-nano structure is deformed under the action of a force exerted on the tactile sensing structure by a touch to be sensed; the top metal layer of each of the plurality of semiconductor wafers forms a plurality of metal regions, and the plurality of first metal regions of the plurality of metal regions of each semiconductor wafer serve as The present invention is an electrode array, wherein the electrode array includes a plurality of electrodes; each electrode of the plurality of electrodes of each of the plurality of semiconductor wafers corresponds to each tactile sensing micro-nano structure of the plurality of tactile sensing micro-nano structures one-to-one; or each N electrodes of the plurality of electrodes of each of the plurality of semiconductor wafers form a group, and each electrode group corresponds to each tactile sensing micro-nano structure of the plurality of tactile sensing micro-nano structures one-to-one, wherein N is a positive integer greater than or equal to 2; the plurality of metal regions of the top metal layer of each of the plurality of semiconductor wafers also include a second metal region that does not belong to the plurality of first metal regions; when the touch to be sensed is Under the action of the force of the tactile sensing structure, one or more tactile sensing micro-nano structures among the multiple tactile sensing micro-nano structures are deformed so that the spatial shape between the deformed tactile sensing micro-nano structure and the corresponding electrode or electrode group changes; the MOS layer and the multiple intermediate layers of each of the multiple semiconductor chips form an electric switch array and a circuit for measuring capacitance; the multiple electrodes of each of the multiple semiconductor chips and the tactile sensing structure form multiple first capacitors, wherein each electrode of the multiple electrodes of each of the multiple semiconductor chips serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form the other plate of the first capacitor; the circuit for measuring capacitance of at least one of the multiple semiconductor chips is used to measure the capacitance values ​​of the multiple first capacitors; the multiple electrodes of each of the multiple semiconductor chips and the second metal area are coupled to the switch array of the semiconductor chip to which they belong; the switch array of each of the multiple semiconductor chips is connected to the circuit for measuring capacitance of the semiconductor chip to which they belong; the chip packaging also includes a packaging substrate and / or a lead frame, the packaging substrate and / or the lead frame are used to carry the multiple semiconductor chips, and the packaging substrate and / or the lead frame are provided with pins of the chip.

[0089] According to the tactile sensor chip of the third aspect of the present application, the plurality of semiconductor chips are connected to each other to transmit analog signals and / or digital signals.

[0090] According to the tactile sensor chip of the third aspect of the present application, each of the plurality of semiconductor chips includes an analog signal port for connecting to the analog signal ports of other semiconductor chips in the plurality of semiconductor chips and transmitting analog signals between at least two of the plurality of semiconductor chips.

[0091] According to the tactile sensor chip of the third aspect of the present application, the projection of the tactile sensing structure in the first direction at least partially overlaps with the multiple semiconductor chips, wherein the first direction is perpendicular to the main plane of at least one of the multiple semiconductor chips; the projection of each tactile sensing micro-nano structure in the first direction at least partially overlaps with the corresponding electrode or electrode group.

[0092] According to a fourth aspect of the present application, a package of a tactile sensor chip is provided, comprising a tactile sensing structure and a packaging shell; the tactile sensing structure comprises an array of tactile sensing micro-nano structures, and the array of tactile sensing micro-nano structures comprises a plurality of tactile sensing micro-nano structures; under the action of a force of a touch to be sensed on the tactile sensing structure, one or more of the plurality of tactile sensing micro-nano structures are deformed; the tactile sensing structure is used to electrically couple with a semiconductor wafer of the chip; the tactile sensing structure forms one of the plates of each of a plurality of first capacitors, wherein a change in the capacitance value of each of the plurality of first capacitors is used to characterize the tactile sensation to be sensed by the tactile sensor; the packaging shell comprises an opening; the packaging shell covers the tactile sensing structure on the outside relative to the chip, the array of tactile sensing micro-nano structures is opposite to the opening and is exposed through the opening, so that the packaging shell does not cover the tactile sensing micro-nano structure; the package further comprises a packaging substrate and / or a lead frame, the packaging substrate and / or the lead frame are used to carry the semiconductor wafer, and the packaging substrate and / or the lead frame are provided with pins of the chip.

[0093] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, a first isolation layer is included between the top metal layer of the semiconductor wafer and the tactile sensing structure, the first isolation layer serves as a dielectric between the capacitor plates of the multiple first capacitors, and the projection of the first isolation layer in the first direction overlaps with the multiple first metal regions.

[0094] The packaging of the tactile sensor chip according to the fourth aspect of the present application further includes a piezoelectric material film; the piezoelectric material film is located on the inner side of the tactile sensing structure relative to the packaging, and the piezoelectric material film serves as a dielectric between the capacitor plates of the multiple first capacitors.

[0095] According to the package of the tactile sensor chip of the fourth aspect of the present application, the package comprises a second isolation layer, and the second isolation layer covers the outside of the tactile sensing structure relative to the package to protect the tactile sensing structure.

[0096] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, each of the plurality of tactile sensing micro-nano structures is electrically connected to each other through the tactile sensing structure.

[0097] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure includes a first part and a second part; the first part and the second part are respectively used to be electrically connected to the semiconductor wafer of the chip; there is no electrical connection between the first part and the second part.

[0098] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the first part and the second part respectively include non-overlapping parts of the multiple tactile sensing micro-nano structures; or the first part includes the multiple tactile sensing micro-nano structures, and the second part includes a conductive structure isolated from the multiple tactile sensing micro-nano structures.

[0099] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the first part and the second part form a second capacitor, wherein the first part and the second part respectively serve as one of the two plates of the second capacitor; or the first part and / or the second part are used to form a second capacitor, wherein the first part and / or the second part serve as one of the plates of the second capacitor.

[0100] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure includes multiple parts; the multiple parts of the tactile sensing structure respectively include non-overlapping parts of the multiple tactile sensing micro-nano structures; and there is no electrical connection between the multiple parts of the tactile sensing structure.

[0101] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the multiple tactile sensing micro-nano structures are located in the same plane and are arranged in a two-dimensional structure including rows and columns.

[0102] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing micro-nano structure includes a first raised curved surface structure and a second raised curved surface structure relative to each other; the bottom surfaces of the first raised curved surface structure and the second raised curved surface structure are relative to each other.

[0103] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the bottom surface area of ​​the first raised curved surface structure is larger than the bottom surface area of ​​the second raised curved surface structure; and / or the first hemispherical structure and / or the second hemispherical structure are hollow.

[0104] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the surface of the first raised curved surface structure has a hollow structure, and the surface of the second raised curved surface structure does not have a hollow structure.

[0105] According to the package of the tactile sensor chip of the fourth aspect of the present application, the surface of the second raised curved structure abuts against the first isolation layer.

[0106] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure further includes a flexible layer, and the flexible layer covers the tactile sensing micro-nanostructure array outside the chip relative to the chip.

[0107] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the vertex of the surface of the first raised curved structure of each of the tactile sensing micro-nano structures also includes a protrusion, and the protrusion extends into the interior of the flexible layer, so that when the touch to be sensed acts on the tactile sensing structure, the deformation of the flexible layer drives the tactile sensing micro-nano structure where the protrusion is located to deform through the protrusion.

[0108] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the deformation of the tactile sensing micro-nano structure where the protrusion is located is driven by the protrusion, which is related to the magnitude and / or direction of the force of the touch to be sensed on the tactile sensing structure; or the tactile sensing micro-nano structure where the protrusion is located is driven by the protrusion to deform, so that the distances from the curved surface structure of the second protrusion of the tactile sensing micro-nano structure where the protrusion is located to the chip are not all the same.

[0109] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure also includes an associated structure for connecting adjacent tactile sensing micro-nano structures; the associated structure is conductive; the associated structure includes a plurality of beams and a plurality of holes; wherein the plurality of beams are arranged in rows and columns, each of the plurality of beams extends in the plane direction of the tactile sensing micro-nano structure array, and is used to connect adjacent tactile sensing micro-nano structures; each of the plurality of beams is arched, and the arch bulges in the first direction; or each of the plurality of holes is arranged in rows and columns, each hole is surrounded by a group of beams among the plurality of beams, and each tactile sensing micro-nano structure is surrounded by a group of holes among the plurality of holes.

[0110] According to the package of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure is a metal containing titanium.

[0111] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing micro-nano structure includes a first raised curved surface structure and a second raised curved surface structure relative to each other; the bottom of the second raised curved surface structure is arranged on the top of the first raised curved surface structure; according to the packaging of the tactile sensor chip of the fourth aspect of the present application, the bottom surface area of ​​the first raised curved surface structure is larger than the bottom surface area of ​​the second raised curved surface structure; and / or the first raised curved surface structure and / or the second raised curved surface structure are hollow.

[0112] According to the package of the tactile sensor chip of the fourth aspect of the present application, the top of the second raised curved surface structure abuts against the first isolation layer.

[0113] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure also includes an associated structure for connecting adjacent tactile sensing micro-nano structures; the associated structure is conductive; the associated structure includes a plurality of beams and a plurality of holes; wherein the plurality of beams are arranged in rows and columns, each of the plurality of beams extends in the plane direction where the tactile sensing micro-nano structure array is located, and is used to connect adjacent tactile sensing micro-nano structures; each of the plurality of holes is arranged in rows and columns, each hole is surrounded by a group of beams among the plurality of beams, and each tactile sensing micro-nano structure is surrounded by a group of holes among the plurality of holes.

[0114] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure is conductive silicone.

[0115] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure further includes a flexible layer;

[0116] The tactile sensing micro-nano structure includes a second raised curved structure; the flexible layer is located on the outside of the tactile sensing structure relative to the package and covers the tactile sensing micro-nano structure array; the flexible layer is in contact with the bottom surface of the second raised curved structure; so that when the touch to be sensed acts on the tactile sensing structure, the deformation of the flexible layer drives one or more tactile sensing micro-nano structures at the deformation position to deform.

[0117] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure includes a first supporting portion; the first supporting portion of the tactile sensing structure is located around the tactile sensing micro-nano structure array, and is used to abut the packaging substrate or the lead frame, and together with the packaging substrate or the lead frame form a space for accommodating the semiconductor chip.

[0118] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure includes a second supporting portion; the second supporting portion of the tactile sensing structure includes a plurality of supporting units, each supporting unit corresponds one-to-one to each tactile sensing micro-nanostructure of the plurality of tactile sensing micro-nanostructures; each supporting unit abuts the semiconductor wafer and limits the deformation range of the tactile sensing micro-nanostructure corresponding thereto.

[0119] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the packaging includes a fixing structure for fixing the tactile sensing structure to the packaging substrate or the lead frame around the tactile sensing micro-nano structure array.

[0120] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the chip includes a plurality of semiconductor chips; the spatial positions of the plurality of semiconductor chips are adjacent; each electrode of the plurality of electrodes of each of the plurality of semiconductor chips corresponds one-to-one to each tactile sensing micro-nanostructure of the plurality of tactile sensing micro-nanostructures; or every N electrodes of the plurality of electrodes of each of the plurality of semiconductor chips form a group, and each electrode group corresponds one-to-one to each tactile sensing micro-nanostructure of the plurality of tactile sensing micro-nanostructures.

[0121] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, a plurality of the semiconductor chips are connected to each other to transmit analog signals and / or digital signals.

[0122] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the projection of the tactile sensing structure covers part or all of the plurality of semiconductor wafers.

[0123] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensing structure includes a first part and a second part; the tactile sensor chip includes a first semiconductor chip and a second semiconductor chip; the projection of the first part of the tactile sensing structure at least partially overlaps with the first semiconductor chip; the projection of the second part of the tactile sensing structure at least partially overlaps with the second semiconductor chip.

[0124] According to the packaging of the tactile sensor chip of the fourth aspect of the present application, the tactile sensor chip comprises a plurality of the semiconductor wafers; and the projection of each part of the tactile sensing structure in the first direction at least partially overlaps with one of the plurality of the semiconductor wafers.

[0125] According to a fifth aspect of the present application, a chip is provided, comprising a semiconductor wafer and one of the packages according to the first aspect of the present application.

[0126] According to a sixth aspect of the present application, a tactile sensor assembly is provided, including a tactile sensing structure, a circuit board, a semiconductor chip and a connector; the tactile sensing structure includes a tactile sensing micro-nano structure array, and the tactile sensing micro-nano structure array includes a plurality of tactile sensing micro-nano structures; the tactile sensing micro-nano structure is deformed under the action of the force of the touch to be sensed on the tactile sensing structure; the top metal layer of the semiconductor chip forms a plurality of metal areas, and a plurality of first metal areas of the plurality of metal areas serve as an electrode array, and the electrode array includes a plurality of electrodes; each electrode of the plurality of electrodes corresponds one-to-one to each tactile sensing micro-nano structure of the plurality of tactile sensing micro-nano structures; or every N electrodes of the plurality of electrodes form a group, and each electrode group corresponds one-to-one to each tactile sensing micro-nano structure of the plurality of tactile sensing micro-nano structures, wherein N is a positive integer greater than or equal to 2; the plurality of metal areas of the top metal layer also include electrodes that do not belong to the plurality of first metal areas. a second metal area of ​​a metal area; under the action of the force of the touch to be sensed on the tactile sensing structure, one or more tactile sensing micro-nano structures among the multiple tactile sensing micro-nano structures are deformed so that the spatial shape between the deformed tactile sensing micro-nano structure and the corresponding electrode or electrode group is changed; an electric switch array and a circuit for measuring capacitance are formed in the MOS layer and multiple intermediate layers of the semiconductor chip; the multiple electrodes and the tactile sensing structure form multiple first capacitors, wherein each electrode of the multiple electrodes serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form the other plate of the first capacitor; the circuit for measuring capacitance is used to measure the capacitance values ​​of the multiple first capacitors; the multiple electrodes and the second metal area are coupled to the switch array; the switch array is connected to the circuit for measuring capacitance; the connector is fixed to the circuit board, and the semiconductor chip is electrically connected to the connector through the circuit board.

[0127] According to the touch sensor assembly of the sixth aspect of the present application, the semiconductor wafer is fixed to the circuit board.

[0128] The tactile sensor assembly according to the sixth aspect of the present application further includes a packaging substrate and / or a lead frame, wherein the packaging substrate and / or the lead frame are used to carry the semiconductor chip, and the packaging substrate and / or the lead frame are electrically connected to the circuit board.

[0129] According to the tactile sensor assembly of the sixth aspect of the present application, the circuit board is a flexible circuit board.

[0130] According to the tactile sensor assembly of the sixth aspect of the present application, the tactile sensing structure includes a first supporting portion; the first supporting portion of the tactile sensing structure is located around the tactile sensing micro-nano structure array, and is used to abut the packaging substrate or the lead frame, and together with the packaging substrate or the lead frame form a space for accommodating the semiconductor chip.

[0131] According to the tactile sensor assembly of the sixth aspect of the present application, the tactile sensing structure includes a second supporting portion; the second supporting portion of the tactile sensing structure includes a plurality of supporting units, each supporting unit corresponds one-to-one to each tactile sensing micro-nanostructure of the plurality of tactile sensing micro-nanostructures; each supporting unit abuts the semiconductor wafer and limits the deformation range of the tactile sensing micro-nanostructure corresponding thereto.

[0132] According to the tactile sensor assembly of the sixth aspect of the present application, the package includes a fixing structure for fixing the tactile sensing structure to the package substrate or the lead frame around the tactile sensing micro-nano structure array.

[0133] According to the tactile sensor assembly of the sixth aspect of the present application, the projection of each tactile sensing micro-nano structure in the first direction covers the corresponding electrode or electrode group; and / or the area of ​​each tactile sensing micro-nano structure is larger than the corresponding electrode or electrode group.

[0134] According to the sixth aspect of the present application, the tactile sensor assembly includes a plurality of semiconductor chips; the spatial positions of the plurality of semiconductor chips are adjacent; each electrode of the plurality of electrodes of each of the plurality of semiconductor chips corresponds one-to-one to each tactile sensing micro-nanostructure of the plurality of tactile sensing micro-nanostructures; or every N electrodes of the plurality of electrodes of each of the plurality of semiconductor chips form a group, and each electrode group corresponds one-to-one to each tactile sensing micro-nanostructure of the plurality of tactile sensing micro-nanostructures.

[0135] According to the tactile sensor assembly of the sixth aspect of the present application, a plurality of the semiconductor chips are connected to each other to transmit analog signals and / or digital signals.

[0136] According to the tactile sensor component of the sixth aspect of the present application, the tactile sensing structure includes a first part and a second part; the plurality of semiconductor chips include a first semiconductor chip and a second semiconductor chip.

[0137] According to the tactile sensor assembly of the sixth aspect of the present application, the first part is electrically connected to the second metal area of ​​the first semiconductor wafer, and the second part is electrically connected to the second metal area of ​​the second semiconductor wafer; there is no electrical connection between the first part and the second part.

[0138] According to the tactile sensor assembly of the sixth aspect of the present application, the first part and the second part respectively include non-overlapping parts of the multiple tactile sensing micro-nano structures; or the first part includes the multiple tactile sensing micro-nano structures, and the second part includes a conductive structure isolated from the multiple tactile sensing micro-nano structures.

[0139] According to the tactile sensor assembly of the sixth aspect of the present application, the first part and the second part form a second capacitor, wherein the first part and the second part respectively serve as one of the two plates of the second capacitor; or the first part and / or the second part are used to form a second capacitor, wherein the first part and / or the second part serve as one of the plates of the second capacitor.

[0140] According to the tactile sensor assembly of the sixth aspect of the present application, the tactile sensing structure includes multiple parts; the multiple parts of the tactile sensing structure respectively include non-overlapping parts of the multiple tactile sensing micro-nano structures; there is no electrical connection between the multiple parts of the tactile sensing structure.

[0141] According to the seventh aspect of the present application, the tactile sensor chip comprises a semiconductor chip and a piezoelectric material film as a component of the chip package; the piezoelectric material film is deformed under the action of the force of the touch to be sensed on the piezoelectric material film; the piezoelectric material film comprises a first surface and a second surface; the first surface of the piezoelectric material film comprises a surface electrode; the second surface of the piezoelectric material film faces the top metal layer; the top metal layer of the semiconductor chip forms a plurality of metal regions, the plurality of first metal regions of the plurality of metal regions serve as an electrode array, the electrode array comprises a plurality of electrodes; the second surface of the piezoelectric material film comprises a plurality of charge sensing electrodes, the plurality of charge sensing electrodes correspond one to one to the plurality of electrodes of the electrode array; the plurality of metal regions of the top metal layer also comprises a second metal region that does not belong to the plurality of first metal regions domain; the surface electrode on the first surface of the piezoelectric material film is electrically connected to the second metal area; when the touch to be sensed acts on the piezoelectric material film, the piezoelectric material film is deformed so that at the position where the force acts, the spatial shape between the piezoelectric material film and the corresponding electrode or electrode group changes; an electric switch array and a circuit for measuring analog quantities are formed in the MOS layer and multiple intermediate layers of the semiconductor chip; the circuit for measuring analog quantities is used to measure the analog quantities coupled to the multiple electrodes; the multiple electrodes and the second metal area are coupled to the switch array; the switch array is connected to the circuit for measuring analog quantities; the chip packaging also includes a packaging substrate and / or a lead frame, the packaging substrate and / or the lead frame are used to carry the semiconductor chip, and the packaging substrate and / or the lead frame are provided with pins of the chip.

[0142] The tactile sensor chip according to the seventh aspect of the present application also includes an adhesive film; the adhesive film bonds the second surface of the piezoelectric material film to the top metal layer; the adhesive film includes a plurality of holes, and the plurality of holes of the adhesive film correspond one-to-one to the plurality of electrodes of the electrode array.

[0143] According to the tactile sensor chip of the seventh aspect of the present application, there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the electrode array corresponding thereto; the size of the gap depends on the thickness of the adhesive film.

[0144] According to the tactile sensor chip of the seventh aspect of the present application, the piezoelectric material film is deformed under the action of the force of the touch to be sensed on the piezoelectric material film so that at the position where the force acts, the charge sensing electrode of the piezoelectric material film contacts and electrically connects with the electrode corresponding to it.

[0145] According to the tactile sensor chip of the seventh aspect of the present application, the circuit for measuring analog quantities includes a circuit for measuring capacitance, which is used to measure capacitance values ​​of one or more capacitors.

[0146] According to the tactile sensor chip of the seventh aspect of the present application, the multiple electrodes and the piezoelectric material film form multiple first capacitors, wherein each of the multiple electrodes serves as one of the plates of the first capacitor, and the piezoelectric material film serves as the other plate of the first capacitor.

[0147] According to the tactile sensor chip of the seventh aspect of the present application, the piezoelectric material film forms a plurality of first capacitors, wherein each of the plurality of charge induction electrodes serves as one of the plates of the first capacitor, and the surface electrode of the piezoelectric material film serves as the other plate of the first capacitor.

[0148] According to the tactile sensor chip of the seventh aspect of the present application, the area of ​​each of the plurality of charge induction electrodes is larger than the corresponding electrode of the plurality of electrodes.

[0149] According to the tactile sensor chip of the seventh aspect of the present application, if there is a gap between the charge induction electrode of the piezoelectric material film and the electrode of the electrode array corresponding to it, the capacitance formed between the first surface of the piezoelectric material film and the charge induction electrode and the capacitance formed between the charge induction electrode and the electrodes of the multiple electrodes are connected in series to form a first capacitance.

[0150] According to the tactile sensor chip of the seventh aspect of the present application, if the charge induction electrode of the piezoelectric material film contacts the electrode of the corresponding electrode array, the charge induction electrode of the piezoelectric material film and the electrode of the corresponding electrode array together serve as one of the plates of the first capacitor, or the charge induction electrode of the piezoelectric material film serves as one of the plates of the first capacitor.

[0151] According to the tactile sensor chip of the seventh aspect of the present application, the circuit for measuring capacitance is also used to detect the amount of charge of one or more charge sensing electrodes of the piezoelectric material film by measuring capacitance.

[0152] According to the tactile sensor chip of the seventh aspect of the present application, the circuit for measuring analog quantities is used to measure the charge quantity of one or more charge sensing electrodes of the piezoelectric material film.

[0153] According to the tactile sensor chip of the seventh aspect of the present application, when a force of a touch to be sensed acts on the piezoelectric material film, a first charge amount corresponding to the force appears on the charge sensing electrode of the piezoelectric material film at the position where the force acts.

[0154] According to the tactile sensor chip of the seventh aspect of the present application, if there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the corresponding electrode array, there is no electrical connection between the charge sensing electrode of the piezoelectric material film and the circuit for measuring analog quantities.

[0155] According to the tactile sensor chip of the seventh aspect of the present application, if the charge induction electrode of the piezoelectric material film contacts the electrode of the corresponding electrode array, the charge induction electrode of the piezoelectric material film contacts the electrode of the corresponding electrode array to form an electrical connection.

[0156] According to the tactile sensor chip of the seventh aspect of the present application, the circuit for measuring analog quantities includes an ADC for detecting the amount of charge of one or more charge sensing electrodes of the piezoelectric material film by measuring a voltage value.

[0157] According to the tactile sensor chip of the seventh aspect of the present application, the circuit for measuring analog quantities includes a circuit for measuring capacitance and a circuit for measuring voltage; the switch array connects the multiple electrodes and the second metal area to the circuit for measuring voltage and the circuit for measuring capacitance in a time-sharing manner.

[0158] According to the tactile sensor chip of the seventh aspect of the present application, if there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the electrode array corresponding to it, the circuit for measuring capacitance can measure the capacitance value of the first capacitance formed by connecting in series the capacitance formed between the first surface of the piezoelectric material film and the charge sensing electrode and the capacitance formed between the charge sensing electrode and the electrodes of the multiple electrodes.

[0159] According to the tactile sensor chip of the seventh aspect of the present application, if there is a gap between the charge sensing electrode of the piezoelectric material film and the electrode of the electrode array corresponding to it, the circuit for measuring capacitance can measure the capacitance value of the first capacitance formed between the first surface of the piezoelectric material film and the charge sensing electrode.

[0160] According to the tactile sensor chip of the seventh aspect of the present application, if the charge sensing electrode of the piezoelectric material film contacts the electrode of the electrode array corresponding to it, the circuit for measuring capacitance can measure the capacitance value of the first capacitor, wherein the charge sensing electrode of the piezoelectric material film serves as the electrode plate of the first capacitor, and the first surface of the piezoelectric material film serves as the other electrode plate of the first capacitor.

[0161] According to the tactile sensor chip of the seventh aspect of the present application, the circuit for measuring capacitance is also used to detect the amount of charge of one or more charge sensing electrodes of the piezoelectric material film by measuring capacitance.

[0162] According to the tactile sensor chip of the seventh aspect of the present application, the capacitor for measuring voltage is used to detect the amount of charge of one or more charge sensing electrodes of the piezoelectric material film by measuring the voltage value.

[0163] According to the tactile sensor chip of the seventh aspect of the present application, in response to the charge sensing electrode of the piezoelectric material film contacting and electrically connecting with the electrode corresponding thereto under the action of the force of the touch to be sensed on the piezoelectric material film, the circuit for measuring voltage measures the first charge amount corresponding to the force appearing on the charge sensing electrode of the piezoelectric material film at the position where the force acts to identify the occurrence of the touch to be sensed; in response to identifying that the touch to be sensed has occurred, the circuit for measuring capacitance measures the capacitance value of the first capacitance formed between the charge sensing electrode of the piezoelectric material film at the position where the force acts and the first surface of the piezoelectric material film.

[0164] According to the tactile sensor chip of the seventh aspect of the present application, the magnitude and / or direction of the force of the touch to be sensed on the piezoelectric material film is calculated based on the capacitance value of the first capacitor.

[0165] According to the tactile sensor chip of the seventh aspect of the present application, the piezoelectric material film serves as a dielectric between the plates of the plurality of first capacitors.

[0166] According to the tactile sensor chip of the seventh aspect of the present application, the surface electrode includes multiple areas isolated from each other; the second metal area of ​​the top metal layer includes multiple metal areas; each area of ​​the surface electrode is electrically connected to one of the multiple metal areas of the second metal area.

[0167] According to the tactile sensor chip of the seventh aspect of the present application, the top metal layer, the switch array, and the circuit for measuring analog quantities are manufactured on the semiconductor wafer by an integrated circuit chip manufacturing process.

[0168] According to the tactile sensor chip of the seventh aspect of the present application, the chip includes a second isolation layer, which covers the tactile sensing structure on the outside of the chip to protect the tactile sensing structure.

[0169] According to the tactile sensor chip of the seventh aspect of the present application, the plurality of electrodes and / or the second metal area are directly electrically connected to the switch array; or the plurality of electrodes and / or the second metal area are electrically connected to the input end of a semiconductor amplifier, and the output end of the semiconductor amplifier is electrically connected to the switch array; wherein the semiconductor amplifier is formed in the semiconductor wafer; or

[0170] The plurality of electrodes and / or the second metal region are coupled to an input end of a semiconductor amplifier via an electric field, and an output end of the semiconductor amplifier is electrically connected to the switch array; wherein the semiconductor amplifier is formed in the semiconductor wafer.

[0171] According to the tactile sensor chip of the seventh aspect of the present application, the semiconductor amplifier is a MOS tube, and the input end of the semiconductor amplifier is the gate of the MOS tube.

[0172] According to the seventh aspect of the present application, the tactile sensor chip, wherein the semiconductor amplifier is formed in the middle layer of the semiconductor wafer. According to the seventh aspect of the present application, the tactile sensor chip, wherein the chip comprises a plurality of the semiconductor wafers; the spatial positions of the plurality of the semiconductor wafers are adjacent, the piezoelectric material film covers part or all of the plurality of the semiconductor wafers; each of the plurality of electrodes of each of the plurality of the semiconductor wafers corresponds one-to-one to the plurality of charge sensing electrodes.

[0173] According to the tactile sensor chip of the seventh aspect of the present application, a plurality of the semiconductor wafers are connected to each other to transmit analog signals and / or digital signals.

[0174] According to the tactile sensor chip of the seventh aspect of the present application, the surface electrode includes a first region and a second region isolated from each other; and the plurality of semiconductor chips include a first semiconductor chip and a second semiconductor chip.

[0175] According to the tactile sensor chip of the seventh aspect of the present application, a projection of a first area of ​​the surface electrode at least partially overlaps with the first semiconductor wafer; a projection of a second area of ​​the surface electrode at least partially overlaps with the second semiconductor wafer.

[0176] According to the tactile sensor chip of the seventh aspect of the present application, the first area is electrically connected to the second metal area of ​​the first semiconductor wafer, and the second area is electrically connected to the second metal area of ​​the second semiconductor wafer; there is no electrical connection between the first part and the second part.

[0177] According to the tactile sensor chip of the seventh aspect of the present application, the first area and the second area form a second capacitor, wherein the first area and the second area respectively serve as one of the two plates of the second capacitor; or the first area and / or the second area are used to form a second capacitor, wherein the first area and / or the second area serve as one of the plates of the second capacitor.

[0178] According to the tactile sensor chip of the seventh aspect of the present application, the surface electrode includes a plurality of regions isolated from each other;

[0179] The chip includes a plurality of semiconductor wafers; the plurality of semiconductor wafers are spatially adjacent to each other, and the piezoelectric material film covers part or all of the plurality of semiconductor wafers.

[0180] According to the tactile sensor chip of the seventh aspect of the present application, a projection of each of the plurality of regions of the surface electrode isolated from each other at least partially overlaps with one of the plurality of semiconductor wafers.

[0181] According to the eighth aspect of the present application, a tactile perception device for a bionic body comprises a semiconductor chip, a tactile perception structure and a flexible wrapping structure; the tactile perception structure comprises a force transmission structure and a tactile perception micro-nano structure array, and the tactile perception micro-nano structure array comprises a plurality of tactile perception micro-nano structures; the top metal layer of the semiconductor chip forms a plurality of metal regions, and a plurality of first metal regions of the plurality of metal regions serve as an electrode array, and the electrode array comprises a plurality of electrodes; each electrode of the plurality of electrodes corresponds to one of the plurality of tactile perception micro-nano structures; or every N electrodes of the plurality of electrodes form a group, and each electrode group corresponds to one of the plurality of tactile perception micro-nano structures, wherein N is a positive integer greater than or equal to 2; the flexible wrapping structure covers the tactile perception device, and is used to receive the force generated by the touch to be sensed and transmit the force generated by the touch to be sensed to the force transmission structure; the flexible The wrapping structure has a contour, and the contour makes the tactile sensing device have the shape of a bionic body or a part of a bionic body; under the action of the force generated by the touch to be sensed transmitted by the force transmission structure, one or more tactile sensing micro-nano structures among the multiple tactile sensing micro-nano structures are deformed so that the spatial shape between the deformed tactile sensing micro-nano structure and the corresponding electrode or electrode group is changed; an electric switch array and a circuit for measuring capacitance are formed in the MOS layer and multiple intermediate layers of the semiconductor chip; the multiple electrodes and the tactile sensing structure form multiple first capacitors, wherein each electrode of the multiple electrodes serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form another plate of the first capacitor; the circuit for measuring capacitance is used to measure the capacitance values ​​of the multiple first capacitors; the multiple electrodes are coupled to the switch array; the switch array is connected to the circuit for measuring capacitance.

[0182] According to the ninth aspect of the present application, a tactile perception device for a bionic body comprises a semiconductor chip and a tactile perception structure; the tactile perception structure comprises a force transmission structure and a tactile perception micro-nano structure array, the tactile perception micro-nano structure array comprises a plurality of tactile perception micro-nano structures; the top metal layer of the semiconductor chip forms a plurality of metal regions, a plurality of first metal regions of the plurality of metal regions serve as an electrode array, the electrode array comprises a plurality of electrodes; each electrode of the plurality of electrodes corresponds to one of the plurality of tactile perception micro-nano structures; or every N electrodes of the plurality of electrodes form a group, each electrode group corresponds to one of the plurality of tactile perception micro-nano structures, wherein N is a positive integer greater than or equal to 2; the force transmission structure has a first profile, and the first profile enables the tactile perception device to have a bionic body or a bionic body local shape; under the action of the force generated by the touch to be sensed transmitted by the force transmission structure, one or more tactile sensing micro-nano structures among the multiple tactile sensing micro-nano structures are deformed so that the spatial shape between the deformed tactile sensing micro-nano structure and the corresponding electrode or electrode group is changed; an electric switch array and a circuit for measuring capacitance are formed in the MOS layer and multiple intermediate layers of the semiconductor wafer; the multiple electrodes and the tactile sensing structure form multiple first capacitors, wherein each electrode of the multiple electrodes serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form the other plate of the first capacitor; the circuit for measuring capacitance is used to measure the capacitance values ​​of the multiple first capacitors; the multiple electrodes are coupled to the switch array; the switch array is connected to the circuit for measuring capacitance.

[0183] According to the tactile sensing device for a bionic body in the ninth aspect of the present application, the force transmission structure is used to transmit the force generated by the touch to be sensed to one or more tactile sensing micro-nano structures of the tactile sensing micro-nano structure array.

[0184] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the force transmission structure is in contact with the tactile perception micro-nano structure array; or the force transmission structure and the tactile perception micro-nano structure array are integrally formed.

[0185] According to the ninth aspect of the present application, a tactile perception device for a bionic body, wherein the projection of each tactile perception micro-nanostructure in a first direction at least partially overlaps with the corresponding electrode or electrode group, wherein the first direction is perpendicular to the main plane of the semiconductor chip.

[0186] According to the ninth aspect of the present application, the tactile perception device for a bionic body, wherein the force transfer structure includes a plurality of force transfer units; one or more of the plurality of force transfer units transfers the force generated by the touch to be sensed to one or more of the plurality of tactile perception micro-nano structures.

[0187] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, each of the multiple force transmission units corresponds one-to-one to each of the multiple tactile perception micro-nano structures.

[0188] According to the ninth aspect of the present application, a tactile perception device for a bionic body, wherein the force transfer unit includes a first end, a second end and a main body connecting the first end and the second end; the first end of the force transfer unit receives the action of the force generated by the touch to be sensed; the main body of the force transfer unit is used to transfer the action of the force received by its first end to its second end; the second end of the force transfer unit is connected to the tactile perception structure.

[0189] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, the main body of the force transmission unit is rod-shaped; and the main bodies of the multiple force transmission units have the same or different extension directions.

[0190] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, the main body of the force transmission unit is rod-shaped; and the main bodies of the multiple force transmission units have the same or different lengths.

[0191] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the first end of the force transmission unit is a curved surface; and / or the first end of the force transmission unit includes a plurality of branches.

[0192] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the second end of the force transmission unit transmits the force to one or more of the multiple tactile perception micro-nano structures.

[0193] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, the overall shape formed by the multiple force transfer units has the first contour.

[0194] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the area of ​​the first end of the force transmission unit is much larger than the cross-sectional area of ​​the main body of the force transmission unit.

[0195] According to the ninth aspect of the present application, a tactile perception device for a bionic body, wherein the force transmission structure includes multiple first ends, multiple second ends, and a connecting structure connecting the multiple first ends and the multiple second ends; the connecting structure of the force transmission structure is used to transmit the force generated by the touch to be sensed received by one or more first ends of the force transmission structure to one or more second ends of the force transmission structure.

[0196] According to the ninth aspect of the present application, in the tactile perception device for a bionic body, one or more of the multiple second ends of the force transmission structure transmits the force generated by the touch to be sensed to one or more of the multiple tactile perception micro-nano structures.

[0197] According to the tactile perception device for a bionic body in the ninth aspect of the present application, each of the multiple second ends of the force transmission structure corresponds one-to-one to a tactile perception micro-nano structure of the multiple tactile perception micro-nano structures.

[0198] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, the overall shape formed by the multiple first ends of the force transmission structure has the first contour.

[0199] According to the ninth aspect of the present application, a tactile perception device for a bionic body, wherein the connecting structure includes a plurality of first rods extending along a first direction and a plurality of second rods extending along a second direction, wherein the first direction intersects with the second direction; some of the plurality of first rods are used to transmit force between the first end and the second end of the force transmission structure; some of the plurality of first rods are used to transmit force between the first end and the second rod of the force transmission structure; and / or some of the plurality of first rods are used to transmit force between the second rod of the connecting structure and the second end of the force transmission structure.

[0200] According to the tactile perception device for a bionic body in the ninth aspect of the present application, some of the plurality of first rods are used to transmit force between the second rods of the connecting structure.

[0201] According to the ninth aspect of the present application, a tactile perception device for a bionic body, some of the multiple first rods are used to connect the first end and the second end of the force transmission structure; some of the multiple first rods are used to connect the first end and the second rod of the force transmission structure; and / or some of the multiple first rods are used to connect the second rod of the connecting structure and the second end of the force transmission structure.

[0202] According to the tactile perception device for a bionic body in the ninth aspect of the present application, some of the plurality of first rods are used to connect the plurality of second rods of the connection structure.

[0203] According to the tactile perception device for a bionic body in the ninth aspect of the present application, each of the plurality of second rods is respectively connected to a plurality of first rods; and the number of first rods connected to each of the plurality of second rods is the same or different.

[0204] According to the ninth aspect of the present application, the tactile perception device for a bionic body, wherein the second direction is parallel to the main plane of the semiconductor chip; the distance from each of the multiple second rods to the tactile perception micro-nanostructure array in a direction perpendicular to the main plane of the semiconductor chip is the same or different.

[0205] According to the ninth aspect of the present application, a tactile perception device for a bionic body, wherein the connecting structure includes a plurality of first rods extending along a first direction, a plurality of second rods extending along a second direction, and a grid structure, wherein the first direction intersects with the second direction; some of the plurality of first rods are used to transmit force between the first end of the force transmission structure and the grid structure; some of the plurality of first rods are used to transmit force between the first end of the force transmission structure and the second rod; some of the plurality of first rods are used to transmit force between the second rod of the force transmission structure and the grid structure; and / or some of the plurality of first rods are used to transmit force between the second end of the force transmission structure and the grid structure.

[0206] According to the ninth aspect of the present application, the tactile perception device for a bionic body, wherein the grid structure is used to transmit force between the first end of the force transmission structure and the plurality of first rods; the grid structure is used to transmit force between some of the plurality of first rods and the second end of the force transmission structure; and / or the grid structure is used to transmit force between some of the plurality of first rods and other ones of the plurality of first rods.

[0207] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, the multiple second ends of the force transmission structure are respectively located at the vertices of the grid structure.

[0208] According to the ninth aspect of the present application, the tactile sensing device for a bionic body, wherein the grid structure is in the shape of a plate; the grid structure is in the shape of a curved surface; the grid structure is in the shape of a step; or the grid structure has a second contour, and the second contour makes the tactile sensing device have the shape of a bionic body or a part of a bionic body.

[0209] According to the ninth aspect of the present application, a tactile perception device for a bionic body, wherein the connecting structure includes a plurality of first rods extending along a first direction, a plurality of second rods extending along a second direction, and a plurality of third rods extending along a third direction, wherein the first direction intersects with the second direction, the first direction intersects with the third direction, and the second direction and the third direction are both parallel to the main plane of the semiconductor chip; some of the plurality of first rods are used to transmit force between the first end and the second end of the force transmission structure; some of the plurality of first rods are used to transmit force between the first end and the second rod of the force transmission structure; and / or some of the plurality of first rods are used to transmit force between the second rod of the connecting structure and the second end of the force transmission structure.

[0210] According to the ninth aspect of the present application, a tactile perception device for a bionic body, some of the multiple first rods are used to transmit force between the first end of the force transmission structure and the third rod; some of the multiple first rods are used to transmit force between the second rod of the connecting structure and the third rod of the connecting structure; and / or some of the multiple first rods are used to transmit force between the third rod of the connecting structure and the second end of the force transmission structure.

[0211] According to the tactile perception device for a bionic body in the ninth aspect of the present application, some of the plurality of first rods are used to connect the first end of the force transmission structure with the connection points of the second rod and the third rod.

[0212] According to the ninth aspect of the present application, a tactile perception device for a bionic body is provided, wherein each of the plurality of first rods is used to connect one of the first ends of the force transmission structure with one of the one or more second ends; and each of the plurality of second rods is used to connect an adjacent second end of the force transmission structure.

[0213] According to the ninth aspect of the present application, a tactile perception device for a bionic body, wherein the connecting structure includes a plurality of first rods extending along a first direction and a plurality of second rods extending along a second direction, wherein the first direction intersects the second direction; some of the plurality of first rods are used to transmit force between the first end of the force transmission structure and the second rod; some of the plurality of second rods are used to transmit force between adjacent second ends of the force transmission structure.

[0214] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, some of the plurality of second rods are used to connect the plurality of first rods.

[0215] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, the connection structure is a truss structure.

[0216] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the force transfer structure fills the space between the first contour and the tactile perception micro-nanostructure array.

[0217] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the force transmission structure is in conformal contact with the tactile perception micro-nanostructure array.

[0218] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, the force transmission structure is conductive.

[0219] According to the ninth aspect of the present application, the tactile sensing device for a bionic body, wherein the tactile sensing structure includes a first part and a second part; the second metal area of ​​the top metal layer includes multiple metal areas; the first part is electrically connected to a part of the multiple metal areas of the second metal area, and the second part is electrically connected to another part of the multiple metal areas of the second metal area; there is no electrical connection between the first part and the second part of the tactile sensing structure.

[0220] According to the ninth aspect of the present application, the tactile perception device for a bionic body comprises:

[0221] The first part of the tactile sensing structure includes a first force transmission structure and a first tactile sensing micro-nano structure array; and the second part of the tactile sensing structure includes a second force transmission structure and a second tactile sensing micro-nano structure array.

[0222] According to the ninth aspect of the present application, the tactile perception device for a bionic body, wherein the first part and the second part respectively include non-overlapping parts of the multiple tactile perception micro-nano structures; or the first part includes multiple tactile perception micro-nano structures, and the second part includes a conductive structure isolated from the multiple tactile perception micro-nano structures of the first part.

[0223] According to the ninth aspect of the present application, the tactile perception device for a bionic body, wherein the first part and the second part form a second capacitor, wherein the first part and the second part respectively serve as one of the two plates of the second capacitor; or the first part and / or the second part are used to form a second capacitor, wherein the first part and / or the second part serve as one of the plates of the second capacitor.

[0224] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the tactile perception structure includes a plurality of parts; and there is no electrical connection between the plurality of parts of the tactile perception structure.

[0225] According to the ninth aspect of the present application, the tactile perception device for a bionic body also includes a flexible wrapping structure, which covers the tactile perception device and is used to receive the force generated by the touch to be sensed and transmit the force generated by the touch to be sensed to the tactile perception structure.

[0226] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the flexible wrapping structure is in conformal contact with the tactile perception structure.

[0227] According to the ninth aspect of the present application, the tactile sensing device for a bionic body, wherein the outer surface of the flexible wrapping structure is capable of forming conformal contact with the inner surface of the bionic body cavity accommodating the tactile sensing device.

[0228] According to the ninth aspect of the present application, the tactile sensing device for a bionic body, wherein the flexible wrapping structure has a third contour, and the third contour enables the tactile sensing device to have the shape of a bionic body or a part of a bionic body.

[0229] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the first end of the force transmission structure is a curved surface and is fitted with a designated position of the flexible wrapping structure, and each first end of the force transmission structure is fitted with a different position of the flexible wrapping structure.

[0230] According to the ninth aspect of the present application, the tactile sensing device for a bionic body, wherein the force transmission structure supports the flexible wrapping structure so that the outer surface of the wrapping structure forms conformal contact with the inner surface of the bionic body cavity accommodating the tactile sensing device.

[0231] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, the flexible wrapping structure is non-conductive.

[0232] According to the ninth aspect of the present application, the tactile perception device for a bionic body, wherein the flexible wrapping structure includes a surface layer and an internal structure; the surface layer covers the internal structure; the internal structure is in contact with the force transmission structure; the surface layer is non-conductive; and the internal structure is conductive.

[0233] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the force transmission structure supports the internal structure of the flexible wrapping structure so that the surface layer of the flexible wrapping structure has a third contour.

[0234] According to the ninth aspect of the present application, in the tactile perception device for a bionic body, the internal structure of the flexible wrapping structure is in conformal contact with the tactile perception structure.

[0235] According to the ninth aspect of the present application, the tactile perception device for a bionic body, wherein the internal structure of the flexible wrapping structure includes a first internal structure and a second internal structure, and there is no electrical connection between the first internal structure and the second internal structure; the tactile perception structure includes a first part and a second part; there is no electrical connection between the first part and the second part; the first internal structure is in contact with the first part; and the second internal structure is in contact with the second part.

[0236] According to the ninth aspect of the present application, there is an electrical connection between the internal structure and the tactile sensing structure; the surface layer is used to receive the touch to be sensed; and the internal structure is used to apply the force generated by the touch to be sensed to the force transfer structure.

[0237] According to the tactile perception device for a bionic body according to the ninth aspect of the present application, the flexible wrapping structure has the shape of the bionic body or a part of the bionic body.

[0238] According to the ninth aspect of the present application, a tactile perception device for a bionic body, each electrode of the multiple electrodes corresponds one-to-one to each tactile perception micro-nano structure of the multiple tactile perception micro-nano structures; or every N electrodes of the multiple electrodes form a group, and each electrode group corresponds one-to-one to each tactile perception micro-nano structure of the multiple tactile perception micro-nano structures.

[0239] According to the tactile sensing device for a bionic body in the ninth aspect of the present application, a piezoelectric material film or a dielectric elastomer film is included between the top metal layer of the semiconductor chip and the tactile sensing structure, and the piezoelectric material film or the dielectric elastomer film serves as a dielectric between the plates of the multiple first capacitors.

[0240] According to the ninth aspect of the present application, the tactile sensing device for a bionic body comprises a first surface and a second surface; the first surface of the piezoelectric material film or the dielectric elastomer film faces the tactile sensing structure; the second surface of the piezoelectric material film or the dielectric elastomer film faces the top metal layer; the second surface of the piezoelectric material film or the dielectric elastomer film comprises a plurality of charge sensing electrodes, and each of the plurality of electrodes of the electrode array corresponds to one of the plurality of charge sensing electrodes.

[0241] According to the ninth aspect of the present application, the tactile sensing device for a bionic body also includes an adhesive film; the adhesive film bonds the second surface of the piezoelectric material film or the dielectric elastomer film to the top metal layer; the adhesive film includes a plurality of holes, and the plurality of holes of the adhesive film correspond one-to-one to the plurality of electrodes of the electrode array.

[0242] According to the ninth aspect of the present application, a tactile sensing device for a bionic body is provided, wherein there is a gap between the charge induction electrode of the piezoelectric material film or the dielectric elastomer film and the electrode of the corresponding electrode array; the size of the gap depends on the thickness of the adhesive film.

[0243] According to the ninth aspect of the present application, in a tactile sensing device for a bionic body, under the action of the force of the touch to be sensed on the piezoelectric material film or the dielectric elastomer film, the piezoelectric material film or the dielectric elastomer film is deformed so that at the position where the force acts, the charge sensing electrode of the piezoelectric material film or the dielectric elastomer film contacts and electrically connects with the corresponding electrode.

[0244] According to the ninth aspect of the present application, in the tactile sensing device for a bionic body, if there is a gap between the charge induction electrode of the piezoelectric material film or the dielectric elastomer film and the electrode of the corresponding electrode array, the capacitance formed between the first surface of the piezoelectric material film or the dielectric elastomer film and the charge induction electrode is connected in series with the capacitance formed between the charge induction electrode and the electrodes of the multiple electrodes to form a first capacitance.

[0245] According to the tactile sensing device for a bionic body in the ninth aspect of the present application, if the charge induction electrode of the piezoelectric material film or the dielectric elastomer film is in contact with the electrode of the corresponding electrode array, the charge induction electrode of the piezoelectric material film or the dielectric elastomer film serves as one of the plates of the first capacitor.

[0246] According to the tactile sensing device for a bionic body in the ninth aspect of the present application, the first surface of the piezoelectric material film or the dielectric elastomer film includes a surface electrode, and the surface electrode includes one or more regions isolated from each other.

[0247] According to the tactile perception device for a bionic body in the ninth aspect of the present application, a circuit for measuring voltage is also formed within the MOS layer and multiple intermediate layers of the semiconductor chip; and the switch array is also used to connect the multiple first metal areas to the circuit for measuring voltage.

[0248] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the switch array connects the multiple first metal areas to the circuit for measuring voltage and the circuit for measuring capacitance in a time-sharing manner.

[0249] According to the tactile perception device for a bionic body in the ninth aspect of the present application, the top metal layer, the switch array, the circuit for measuring capacitance and the circuit for measuring voltage are manufactured on the semiconductor wafer by an integrated circuit chip manufacturing process.

[0250] According to the ninth aspect of the present application, a tactile sensing device for a bionic body is provided, wherein, when the force of the touch to be sensed acts on the piezoelectric material film or the dielectric elastomer film, a first charge corresponding to the force appears on the charge sensing electrode of the piezoelectric material film or the dielectric elastomer film at the location where the force acts, and the circuit for measuring voltage is used to measure the first charge.

[0251] According to the ninth aspect of the present application, the tactile perception device for a bionic body also includes a second semiconductor chip; the top metal layer of the second semiconductor chip forms a plurality of metal areas, and the plurality of first metal areas of the plurality of metal areas of the second semiconductor chip serve as an electrode array, and the electrode array of the second semiconductor chip includes a second plurality of electrodes; each electrode of the second plurality of electrodes corresponds to one of the plurality of tactile perception micro-nano structures; or every N electrodes of the second plurality of electrodes form a group, and each electrode group corresponds to one of the plurality of tactile perception micro-nano structures; the second plurality of electrodes and the tactile perception structure form a plurality of first capacitors, wherein each electrode of the second plurality of electrodes serves as one of the plates of the first capacitor, and the tactile perception structure is used to form another plate of the first capacitor.

[0252] According to the ninth aspect of the present application, a tactile sensing device for a bionic body, wherein the main planes of the first semiconductor chip and the second semiconductor chip respectively face different areas of the tactile sensing micro-nanostructure array; each of the multiple tactile sensing micro-nanostructures corresponds to at most one of the electrodes of the electrode array of the first semiconductor chip and the second semiconductor chip.

[0253] According to the ninth aspect of the present application, the tactile sensing device for a bionic body, wherein the tactile sensing micro-nanostructure array has a fourth contour; the tactile sensing micro-nanostructure array with the fourth contour supports the force transfer structure so that the force transfer structure has the first contour; the fourth contour has one or more planar areas; the main planes of the first semiconductor chip and the second semiconductor chip are respectively facing the same or different planar areas of the fourth contour.

[0254] According to the tenth aspect of the present application, the tactile sensing device for a bionic body comprises a tactile sensing structure and a plurality of semiconductor chips; the tactile sensing structure comprises a force transmission structure and a tactile sensing micro-nano structure array, the tactile sensing micro-nano structure array comprises a plurality of tactile sensing micro-nano structures; the top metal layer of each semiconductor chip of the plurality of semiconductor chips forms a plurality of metal regions, a plurality of first metal regions of the plurality of metal regions serve as an electrode array, and the electrode array comprises a plurality of electrodes;

[0255] Each electrode of the plurality of electrodes corresponds to one of the plurality of tactile sensing micro-nano structures; or every N electrodes of the plurality of electrodes form a group, and each electrode group corresponds to one of the plurality of tactile sensing micro-nano structures, wherein N is a positive integer greater than or equal to 2; the force transmission structure has a first profile, and the first profile enables the tactile sensing device to have the shape of a bionic body or a part of a bionic body; under the action of the force generated by the touch to be sensed transmitted by the force transmission structure, one or more tactile sensing micro-nano structures of the plurality of tactile sensing micro-nano structures are deformed so that the space between the deformed tactile sensing micro-nano structure and the electrode or electrode group corresponding thereto is reduced. The shape of the space changes; an electric switch array and a circuit for measuring capacitance are formed in the MOS layer and multiple intermediate layers of each semiconductor chip; the multiple electrodes of each semiconductor chip and the tactile sensing structure form multiple first capacitors, wherein each electrode of the multiple electrodes serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form the other plate of the first capacitor; the circuit for measuring capacitance of each semiconductor chip is used to measure the capacitance values ​​of multiple first capacitors; the multiple electrodes of each semiconductor chip are coupled to the switch array of the semiconductor chip to which it belongs; and the switch array of each semiconductor chip is connected to the circuit for measuring capacitance of the semiconductor chip to which it belongs.

[0256] According to the tenth aspect of the present application, a tactile perception device for a bionic body, wherein a plurality of the semiconductor chips are connected to transmit analog signals and / or digital signals; according to the tenth aspect of the present application, a tactile perception device for a bionic body, wherein one or more of the plurality of semiconductor chips include an analog signal router and an analog signal port, and the analog signal port is used to connect the analog signal ports of other semiconductor chips, thereby transmitting analog signals across chips between the plurality of semiconductor chips.

[0257] According to the tenth aspect of the present application, the tactile perception device for a bionic body, wherein the main planes of one or more semiconductor wafers of the plurality of semiconductor wafers are not coplanar; and the edges of one or more semiconductor wafers of the plurality of semiconductor wafers are adjacent.

[0258] According to the tenth aspect of the present application, the tactile perception device for a bionic body, wherein the main planes of each of the multiple semiconductor chips are respectively oriented towards different areas of the same tactile perception micro-nanostructure array; each of the multiple tactile perception micro-nanostructures corresponds to at most one of the electrodes of the electrode array of each of the multiple semiconductor chips.

[0259] According to the tenth aspect of the present application, the tactile sensing device for a bionic body, wherein the tactile sensing micro-nanostructure array has a second contour; the tactile sensing micro-nanostructure array with the second contour supports the force transfer structure so that the force transfer structure has the first contour; the second contour has one or more planar areas; the main planes of each of the multiple semiconductor chips are respectively facing the same or different planar areas of the second contour.

[0260] According to the tenth aspect of the present application, the tactile sensing device for a bionic body comprises a plurality of the tactile sensing structures; each of the plurality of semiconductor chips corresponds to one of the plurality of tactile sensing structures; and the main plane of each of the plurality of semiconductor chips faces the tactile sensing micro-nanostructure array corresponding to the tactile sensing structure.

[0261] According to the tenth aspect of the present application, there is no electrical connection between the multiple tactile sensing structures; the multiple tactile sensing structures include one or more first tactile sensing structures and one or more second tactile sensing structures; the one or more first tactile sensing structures and the one or more second tactile sensing structures form a second capacitor, wherein the one or more first tactile sensing structures serve as one of the plates of the second capacitor, and the one or more second tactile sensing structures serve as the other plate of the second capacitor.

[0262] According to the tactile perception device for a bionic body according to the tenth aspect of the present application, the multiple tactile perception structures are respectively connected to the multiple semiconductor chips; and the circuit for measuring capacitance of one of the multiple semiconductor chips is used to measure the second capacitance.

[0263] According to the tenth aspect of the present application, the tactile sensing device for a bionic body, wherein the force transmission structures of the multiple tactile sensing structures jointly form the first contour; the tactile sensing micro-nano structure arrays of the multiple tactile sensing structures jointly form the second contour; the tactile sensing micro-nano structure arrays of the multiple tactile sensing structures respectively support the force transmission structure of the tactile sensing structure to which they belong, so that the force transmission structures of the multiple tactile sensing structures respectively form the first contour; the second contour has one or more planar areas; the main planes of the multiple semiconductor chips respectively face the same or different planar areas of the second contour.

[0264] According to the tenth aspect of the present application, a tactile sensing device for a bionic body, wherein the force transmission structure of each of the multiple tactile sensing structures is used to transmit the force generated by the touch to be sensed to one or more tactile sensing micro-nano structures of the tactile sensing micro-nano structure array of the tactile sensing structure to which it belongs.

[0265] According to the tenth aspect of the present application, a tactile perception device for a bionic body, wherein the force transmission structure of each of the multiple tactile perception structures includes multiple force transmission units; one or more of the multiple force transmission units transmits the force generated by the touch to be sensed to one or more of the multiple tactile perception micro-nano structures of the tactile perception micro-nano structure array of the tactile perception structure to which it belongs.

[0266] According to the tenth aspect of the present application, a tactile perception device for a bionic body, wherein the force transmission structure of each of the multiple tactile perception structures includes multiple first ends, multiple second ends, and a connecting structure connecting the multiple first ends and the multiple second ends; the connecting structure of the force transmission structure of each of the multiple tactile perception structures is used to transmit the force generated by the touch to be sensed received by one or more first ends of the force transmission structure to which it belongs to, to one or more second ends of the force transmission structure to which it belongs.

[0267] According to the tenth aspect of the present application, the tactile perception device for a bionic body also includes a flexible wrapping structure, which covers the tactile perception device and is used to receive the force generated by the touch to be sensed and transmit the force generated by the touch to be sensed to the tactile perception structure.

[0268] According to the tenth aspect of the present application, the tactile sensing device for a bionic body, wherein the flexible wrapping structure has a third contour, and the third contour enables the tactile sensing device to have the shape of a bionic body or a part of a bionic body.

[0269] According to the tenth aspect of the present application, the tactile sensing device for a bionic body, wherein the flexible wrapping structure includes a surface layer and an internal structure; the surface layer covers the internal structure; the internal structure is in contact with the force transmission structure of the tactile sensing structure; the surface layer is non-conductive; and the internal structure is conductive.

[0270] According to the tenth aspect of the present application, a tactile sensing device for a bionic body comprises a piezoelectric material film or a dielectric elastomer film between one or more top metal layers of the multiple semiconductor chips and the tactile sensing structure, and the piezoelectric material film or the dielectric elastomer film serves as a dielectric between the plates of the multiple first capacitors.

[0271] According to the tenth aspect of the present application, the tactile sensing device for a bionic body comprises a first surface and a second surface; the first surface of the piezoelectric material film or the dielectric elastomer film faces the corresponding tactile sensing structure; the second surface of the piezoelectric material film or the dielectric elastomer film faces the top metal layer of the semiconductor chip corresponding to it; the second surface of the piezoelectric material film or the dielectric elastomer film comprises a plurality of charge induction electrodes, and each of the plurality of electrodes of the electrode array of the semiconductor chip corresponding to the piezoelectric material film or the dielectric elastomer film corresponds to one of the plurality of charge induction electrodes.

[0272] The hand tactile sensor chip for the dexterous hand of a humanoid robot according to the embodiment of the present application has the following advantages: the integration of the tactile sensing structure can make the application simpler, and there is no need to set up complex capacitor plates outside the chip; the capacitor plates for collecting signals and the digital-to-analog conversion circuits are directly integrated on the chip, reducing the information attenuation and interference of analog information caused by long-distance transmission; the integrated circuit manufacturing process is used to realize tactile sensing products that are easy to industrialize and have high precision and high spatial resolution; and the ultra-thin insulating layer increases the sensitivity of the capacitor signal by an order of magnitude compared to the traditional insulating coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0273] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0274] Figure 1A-Figure 1C A tactile sensor chip according to an embodiment of the present application is shown.

[0275] Figure 2 A structural diagram of a tactile sensing structure according to an embodiment of the present application is shown.

[0276] Figure 3A A stereoscopic view of a tactile sensing micro-nano structure located on a top metal layer according to an embodiment of the present application is shown.

[0277] Figure 3B A stereoscopic view of a tactile sensing micro-nano structure located on a top metal layer according to yet another embodiment of the present application is shown.

[0278] Figure 3C A cross-sectional view of a tactile sensing chip according to an embodiment of the present application is shown.

[0279] Figure 3D A cross-sectional view of a tactile sensing chip according to another embodiment of the present application is shown.

[0280] Figure 4A A circuit schematic diagram of a tactile sensor according to an embodiment of the present application is shown.

[0281] Figure 4B A circuit schematic diagram of a tactile sensor according to another embodiment of the present application is shown.

[0282] Figure 5 The package of the tactile sensor chip according to the embodiment of the present application is shown.

[0283] Figure 6 The packaging process flow of the tactile sensor chip according to the embodiment of the present application is demonstrated.

[0284] Figure 7 An exploded view of components of a tactile sensor chip according to yet another embodiment of the present application is shown.

[0285] Fig. 8A Shows the basis Figure 7 A tactile sensing micro-nanostructure array of a tactile sensing structure of an embodiment.

[0286] Figure 8B Shows the basis Fig. 8A A local enlarged view of the tactile sensing micro-nano structure of the tactile sensing structure of an embodiment.

[0287] Figure 8C A partially enlarged perspective view of a tactile sensing micro-nano structure of a tactile sensing structure according to an embodiment of the present application is shown.

[0288] Fig.9A Shows the basis Figure 7 A three-dimensional image of a tactile sensing micro-nanostructure of an embodiment.

[0289] Fig. 9B Shows the basis Figure 7 A side view of a tactile sensing micro-nanostructure of an embodiment.

[0290] Figures 10A-10G A tactile sensor chip according to yet another embodiment of the present application is shown.

[0291] Fig.11 An exploded view of various parts of a tactile sensor chip according to yet another embodiment of the present application is shown.

[0292] Fig.12 A surface view of a piezoelectric material film according to an embodiment of the present application is shown.

[0293] Fig.13A , Fig. 13B and Fig. 13C Shows the basis Fig.11A three-dimensional schematic diagram of an embodiment of the present application.

[0294] Fig.14 Shows the basis Fig.11 A cross-sectional view of the tactile sensing chip of an embodiment of the present application.

[0295] Fig.15 Shows the basis Fig.11 The packaging process flow of the tactile sensor chip of the embodiment of the present application.

[0296] Fig.16A A circuit schematic diagram of a tactile sensor chip according to an embodiment of the present application is shown.

[0297] Fig. 16B A circuit schematic diagram of a tactile sensor chip according to another embodiment of the present application is shown.

[0298] Fig.17A and Fig. 17B A touch sensor assembly according to another embodiment of the present application is shown.

[0299] Fig.18A , 18B 18C shows a tactile sensor chip according to another embodiment of the present application.

[0300] Fig.19A A tactile perception device for a bionic body according to an embodiment of the present application is demonstrated.

[0301] Fig.19B Shown Fig.19A A three-dimensional diagram of a tactile sensing device.

[0302] Fig. 20A A tactile sensing device for a bionic body according to yet another embodiment of the present application is shown.

[0303] Fig. 20B Shown Fig. 20A A three-dimensional diagram of a tactile sensing device.

[0304] Fig. 20C A three-dimensional diagram of a tactile sensing device according to another embodiment is shown.

[0305] Fig.21A A tactile sensing device for a bionic body according to yet another embodiment of the present application is shown.

[0306] Fig.21B Shown Fig.21A A three-dimensional diagram of a tactile sensing device.

[0307] Fig.22A A tactile sensing device for a bionic body according to yet another embodiment of the present application is shown.

[0308] Fig. 22B and Fig. 22C Shown Fig.22A A three-dimensional diagram of a tactile sensing device.

[0309] Fig.23A A tactile sensing device for a bionic body according to yet another embodiment of the present application is shown.

[0310] Fig. 23B Shown Fig.23A A three-dimensional diagram of a tactile sensing device. DETAILED DESCRIPTION

[0311] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0312] According to the embodiment of the present application, the tactile sensor unit array is integrated into the integrated circuit chip. The tactile sensor chip is realized by utilizing the characteristics of high integration, small line width, high precision and low power consumption of the integrated circuit chip, and the tactile sensing structure as a component of the tactile sensor chip package is used together with the top metal of the semiconductor wafer in the chip to form a capacitor that senses the external environment to solve the technical problem to be solved by the present application.

[0313] Figure 1A-Figure 1C A tactile sensor chip according to an embodiment of the present application is shown.

[0314] Figure 1A A tactile sensor chip according to an embodiment of the present application is shown. Figure 1B yes Figure 1A An exploded view of the components of a tactile sensor chip. Figure 1C yes Figure 1B An exploded view of a semiconductor wafer containing a tactile sensor chip.

[0315] The tactile sensor chip includes a semiconductor wafer, a tactile sensing structure, a packaging shell and a packaging base. The packaging shell, the tactile sensing structure and the packaging base together form the packaging of the tactile sensor chip, providing protection for the wrapped semiconductor wafer, so that the tactile sensing structure becomes a component of the tactile sensor chip packaging. The packaging shell includes an opening. After the packaging shell and the tactile sensing structure are pressed and fixed, the upper surface of the tactile sensing structure is exposed through the opening of the packaging shell, so that the tactile sensing structure can approach or contact the external environment, so that when the external touch of the tactile sensor acts on the upper surface of the tactile sensing structure, the tactile sensing structure undergoes a deformation that can be sensed by the analog signal measurement circuit in the semiconductor wafer. The packaging base carries the semiconductor wafer. The packaging base includes a packaging substrate and / or a lead frame. The lead frame is used to form the pins of the chip and to connect the gold wires led out from the semiconductor wafer. Some packaging forms (such as BGA packaging) do not use a lead frame, but connect the gold wires led out of the semiconductor wafer to the solder balls on the packaging substrate.

[0316] The tactile sensing structure includes an array of multiple tactile sensing micro-nano structures (referred to as a tactile sensing micro-nano structure array). The tactile sensing micro-nano structure is deformed under the force of the touch to be sensed. The tactile sensing structure is flexible and is formed of, for example, conductive silicone or metal by, for example, injection molding, 3D printing, or other existing or future technologies.

[0317] See also Figure 1C The semiconductor wafer includes a top metal layer, a MOS layer and a plurality of intermediate layers. The top metal layer is located on the surface of the semiconductor wafer away from the substrate. Optionally, an isolation layer is also included on the top metal layer to protect the top metal layer. The isolation layer is formed of, for example, SiO2 or other insulating materials with a certain hardness. The MOS layer is a layer forming a MOS (metal oxide semiconductor) structure in the semiconductor wafer. The MOS layer is usually located on the substrate. It can be understood that there can be multiple MOS layers in the semiconductor wafer. The multiple intermediate layers of the semiconductor wafer provide routing.

[0318] According to an embodiment of the present application, the top metal layer forms a plurality of metal regions. In the prior art, the metal regions of the top metal layer are used to connect gold wires to transmit electrical signals in the semiconductor wafer to the chip pins. In an embodiment of the present application, some metal regions of the top metal layer serve as an electrode array. The electrodes of the electrode array correspond to the tactile sensing micro-nano structures of the tactile sensing structure. Thus, the electrodes of the electrode array form one of the plates of a measurable capacitor, and the tactile sensing micro-nano structure corresponding thereto serves as the other plate of the capacitor. When the tactile sensing structure is touched, the tactile sensing micro-nano structure is deformed, causing the distance between the two plates of the capacitor to change, thereby changing the capacitance value. Touch is sensed by measuring the change in capacitance value.

[0319] It is understood that each electrode of the electrode array forms a measurable capacitor. By forming multiple measurable capacitors in the tactile sensor chip, the position and / or size of the touch can be identified through the relative relationship between the capacitance values ​​of each capacitor.

[0320] Optionally, the electrodes of the electrode array of the top metal layer have a specified area so that the formed capacitor has a capacitance value of sufficient size to be measured. The area of ​​the electrodes of the electrode array and the spacing between the electrodes of the electrode array reflect the accuracy or spatial resolution of the touch sensor chip according to the embodiment of the present application. For example, the spacing between the centers of adjacent electrodes of the electrode array is set to 1 mm to provide a 1 mm 2 Precise spatial resolution. Thanks to the high integration density of semiconductor wafers, the spacing between the centers of adjacent electrodes in the electrode array can be made smaller to provide higher spatial resolution.

[0321] The tactile sensing micro-nano structure corresponds to the electrodes of the electrode array of the top metal layer, but the tactile sensing micro-nano structures of the tactile sensing structure can have the same electric potential (electrically connected to each other), so that the size of the tactile sensing micro-nano structure can be larger than the electrodes of the electrode array, thereby reducing the requirements for the processing technology of the tactile sensing micro-nano structure. In other words, there is no need to set electrical isolation between the tactile sensing micro-nano structures of the tactile sensing structure. The tactile sensing micro-nano structure is set so that it can deform relatively independently under the action of touch force to produce a change in the capacitance value of the reaction space position. The deformation of each tactile sensing micro-nano structure does not need to be absolutely independent. Even if the deformation of a tactile sensing micro-nano structure causes the deformation of an adjacent tactile sensing micro-nano structure, due to the difference in deformation size, a change in the capacitance value of the reaction space position can be generated. In some cases, the force generated by touch acts on an area rather than a point, and causes multiple adjacent tactile sensing micro-nano structures to deform at the same time.

[0322] Optionally, the projection of the tactile sensing micro-nanostructure in a direction perpendicular to the main plane of the semiconductor wafer covers the electrode of the electrode array corresponding thereto, thereby also shielding the electrode to shield the influence of the electric field or electric signal in the surrounding environment of the tactile sensor chip on the capacitance value of the capacitor formed by the electrode. Optionally, the projection of the tactile sensing structure in a direction perpendicular to the main plane of the semiconductor wafer covers the semiconductor wafer as a whole to shield the electrode array.

[0323] A circuit for measuring capacitance is implemented in a semiconductor wafer, for example, a CDC (capacitance digital converter) or ADC (analog digital converter) in the prior art. The electrodes of the electrode array in the top metal area are connected to the circuit for measuring capacitance through vias and / or wires formed in multiple intermediate layers of the semiconductor wafer. Generally, the connection between the capacitor and the circuit for measuring capacitance is called a capacitance channel. The capacitance channel between the electrodes of the electrode array and the circuit for measuring capacitance is formed in multiple intermediate layers of the semiconductor wafer, so even if the number of electrodes of the electrode array is large, a sufficient number of routings can be provided in the semiconductor wafer and a sufficient number of capacitance channels can be formed. Thus, the technical problem that it is difficult or impossible to manufacture a large number of wirings in a limited space when the number of capacitance channels of a high-precision tactile sensor in the prior art is too large is solved. And the electrodes of the electrode array and the circuit for measuring capacitance are integrated on the same semiconductor wafer, which greatly shortens the signal transmission distance between the capacitor plate and the circuit for measuring capacitance, thereby reducing the signal attenuation and interference caused by long-distance transmission of analog signals, improving the accuracy of capacitance measurement, and / or reducing the complexity and cost required to achieve the same measurement accuracy.

[0324] In one example, each tactile sensing micro-nanostructure of the tactile sensing structure has the same electrical potential, so that all the tactile sensing micro-nanostructures of the tactile sensing structure can be connected to a circuit for measuring capacitance of a semiconductor wafer through a single metal wire without introducing excessive manufacturing cost and difficulty.

[0325] In another example, the tactile sensing structure includes a small number (e.g., 2, 4) of parts that are electrically isolated from each other. These electrically isolated parts are connected to the semiconductor wafer through gold wires. Even if the spatial precision of the tactile sensor chip is very high (e.g., including 100 or more tactile sensing micro-nano structures), only a small number of metal wires are needed to connect the tactile sensing structure to the semiconductor wafer without introducing excessive manufacturing costs and difficulties.

[0326] Optionally, a switch array is also formed in the semiconductor chip, so that the capacitance channels of each electrode of the electrode array connected to the top metal area are connected to the circuit for measuring capacitance in a time-sharing manner, so as to further reduce the number of wiring required in the semiconductor chip, and a single circuit for measuring capacitance can be used to measure multiple capacitors formed in the tactile sensor chip. The switch array is also used to connect multiple capacitance channels together to combine multiple measurable capacitor plates to change the plate area and / or plate shape of the measurable capacitor, thereby facilitating the perception of capacitance changes caused by touch. The switch array implements, for example, a multiplexer / selector, or adopts an analog signal router structure.

[0327] Still optionally, the tactile sensing structure is also connected to the switch array, so that the tactile sensing structure can be connected to the ground (GND) or connected to the circuit for measuring capacitance through the capacitor channel in a time-sharing manner. One, some or all of the multiple parts of the tactile sensing structure that are electrically isolated from each other can also be electrically connected through the switch array. Thereby, a variety of measurable capacitances are achieved, and the perception of the external environment is promoted. For example, using two parts that are electrically isolated from each other as capacitor plates can sense objects close to the tactile sensing structure in the external environment by measuring capacitance (even if the object is not in contact with the tactile sensing structure), and its perception principle belongs to the prior art.

[0328] Figure 2 A structural diagram of a tactile sensing structure according to an embodiment of the present application is shown.

[0329] As an example, Figure 2 The multiple tactile sensing micro-nano structures of the tactile sensing micro-nano structure array are arranged in rows and columns and are located in the same plane, so that each tactile sensing micro-nano structure has a designated position in the tactile sensing micro-nano structure array. Under the action of the force of the touch to be sensed, one or more adjacent tactile sensing micro-nano structures are deformed, thereby changing the shape between the plates of the capacitor formed by the electrodes of the top metal layer of the semiconductor wafer or the tactile sensing micro-nano structures, and causing the capacitance value to change. By measuring the change in capacitance value, the deformed tactile sensing micro-nano structure is identified, and then the position where the touch occurs is determined. Thus, the dimensional accuracy of the tactile sensing micro-nano structure determines the accuracy of the position of the touch sensor chip sensing the touch. Further, the magnitude of the force generated by the touch can be identified by the change in capacitance value of the capacitor formed by the tactile sensing micro-nano structure. Still further, by the change in capacitance value of the capacitor formed by the deformed multiple tactile sensing micro-nano structures, the direction of the force generated by the touch and the direction or trajectory of the touch movement can also be identified.

[0330] See also Figure 2 For example, the tactile sensing micro-nano structure is circular on the main plane of the tactile sensing structure. Adjacent tactile sensing micro-nano structures are connected by an associated structure. The tactile sensing micro-nano structure and the associated structure are made of, for example, conductive silicone material, so that they are conductive and flexible. Through the associated structure, when a tactile sensing micro-nano structure is subjected to force and deformed, the tactile sensing micro-nano structure adjacent to it also produces a relatively small deformation.

[0331] The associated structure extends on the main plane of the tactile sensing structure and forms the main plane of the tactile sensing structure. The associated structure provides support and fixation for the tactile sensing micro-nano structure. The associated structure is flexible and conductive.

[0332] Figure 3A A stereoscopic view of a tactile sensing micro-nano structure located on a top metal layer according to an embodiment of the present application is shown.

[0333] See also Figure 3A The tactile sensing micro-nanostructure includes a curved surface structure that bulges upward and a curved surface structure that bulges downward. For simplicity, the direction perpendicular to the main plane of the tactile sensing structure and pointing from the semiconductor chip to the tactile sensing structure is called "up", and the direction opposite to "up" is called "down". Figure 3A In the example, the upwardly raised curved surface structure and the downwardly raised curved surface structure are each part of a spherical surface. The circular bottom surfaces of the upwardly raised curved surface structure and the downwardly raised curved surface structure are connected, for example, fitted. The bottom surface area of ​​the upwardly raised curved surface structure is larger than the bottom surface of the downwardly raised curved surface structure. The tactile force to be sensed acts on the upwardly raised curved surface. The lower part of the downwardly raised curved surface structure abuts the semiconductor wafer. Since the hardness of the top metal layer and the optional isolation layer of the semiconductor wafer is greater than the hardness of the tactile sensing structure, when pressed, the bottom surface of the downwardly raised curved surface structure of the tactile sensing micro-nano structure is deformed downward as a whole, and the position of the lower part of the downwardly raised curved surface structure abutting the semiconductor wafer is almost unchanged, causing the downwardly raised curved surface structure to collapse. Thereby changing the capacitance value of the capacitor formed by the tactile sensing micro-nano structure (as a capacitor plate) and the electrode of the top metal layer (as the other plate of the capacitor). Optionally, when pressed, the upwardly protruding curved surface structure also collapses due to the supporting effect of the associated structure and the bottom surface of the downwardly protruding curved surface structure, thereby also affecting the capacitance of the aforementioned capacitor. When an isolation layer exists above the top metal layer of the semiconductor wafer, it also acts as a dielectric between the capacitor plates to affect the capacitance of the aforementioned capacitor. The isolation layer usually has a larger dielectric constant and makes the capacitor have a larger capacitance, which is conducive to the measurement of the capacitance.

[0334] Furthermore, the isolation layer is manufactured by integrated circuit technology and can have an extremely thin thickness (for example, on the order of 100 ns), so that the distance between the two plates of the capacitor formed by the electrodes of the electrode array of the tactile sensing micro-nano structure and the top metal layer is extremely small (in at least some areas, the distance is the thickness of the isolation layer), so that the formed capacitor has a larger capacitance. Compared with the larger gap between the capacitor plates formed by the process of the prior art, the embodiment of the present application improves the sensitivity of measuring capacitance by orders of magnitude.

[0335] Continue to view Figure 3AAs an example, each tactile sensing micro-nano structure in the tactile sensing micro-nano structure array corresponds one-to-one to an electrode in the electrode array of the top metal layer of the semiconductor wafer. The projection of the tactile sensing micro-nano structure in the direction perpendicular to the main plane of the semiconductor wafer covers the electrode corresponding to it. Optionally, the projection of the vertex of the lower part of the downwardly raised curved surface structure of the tactile sensing micro-nano structure is located at the geometric center of the corresponding electrode. Optionally, there is a non-conductive isolation layer between the vertex of the lower part of the downwardly raised curved surface structure of the tactile sensing micro-nano structure and the corresponding electrode, so that although the vertex of the lower part of the curved surface structure is in contact with the isolation layer, there is no electrical connection between it and the corresponding electrode, but it acts as a capacitor plate to form a capacitor.

[0336] Optionally, the semiconductor wafer providing the electrode array is in direct contact with the tactile sensing structure, and no other semiconductor wafers are included between the top metal layer of the semiconductor wafer and the tactile sensing structure, for example, no MEMS structure implemented by other semiconductor wafers, so as to avoid introducing high chip manufacturing costs.

[0337] Understandable, although Figure 3A In the figure, the upwardly raised curved surface structure and the downwardly raised curved surface structure of the tactile sensing micro-nano structure are each part of a spherical surface, and the tactile sensing micro-nano structure as a whole or its curved surface structure may have other shapes, for example, a part of an ellipsoidal surface, a hollow cuboid (with rounded corners), a hollow terrace, a tetrahedron with the vertex facing downward, etc. Various structures that are easy to deform when subjected to pressure and easy to restore the original shape after the pressure disappears can be used to realize the tactile sensing micro-nano structure.

[0338] Still optionally, Figure 3A In the embodiment, although the tactile sensing micro-nano structure includes both an upwardly protruding curved surface structure and a downwardly protruding curved surface structure, as an alternative, the tactile sensing micro-nano structure may have a single downwardly protruding curved surface structure, and the upwardly protruding curved surface structure is replaced by a flexible layer of a planar structure, and the flexible layer extends over the downwardly protruding curved surface structures of multiple or all tactile sensing micro-nano structures in the tactile sensing micro-nano structure array to reduce manufacturing complexity and manufacturing cost. The flexible layer is bonded or integrally formed with the bottom surface of the downwardly protruding curved surface structure.

[0339] Still optionally, the tactile sensing micro-nanostructure includes two curved surface structures that overlap in the upper and lower directions and bulge downward. Figure 3A The downward-raised curved structures shown are the same or similar, and the shapes of the curved structures above are the same. Figure 3A The upwardly raised curved structures shown are the same or similar, but facing in opposite directions. The top of the curved structure located at the top faces downward, while the bottom faces upward. The bottom of the curved structure located at the bottom is buckled on the top of the curved structure located at the top.

[0340] Still optionally, the upwardly raised curved surface structure and the downwardly raised curved surface structure are hollow.

[0341] Figure 3B A stereoscopic view of a tactile sensing micro-nano structure located on a top metal layer according to yet another embodiment of the present application is shown.

[0342] See also Figure 3B The electrodes of the electrode array of the top metal layer of the semiconductor wafer are grouped, for example, 4 electrodes are arranged in 2x2 rows and columns. Such four electrodes are called an electrode group. The electrodes in an electrode group are close to each other, while the distance between electrode groups is relatively far. For example, the distance between two electrodes belonging to different electrode groups is greater than the distance between two electrodes in the electrode group.

[0343] exist Figure 3B In an embodiment, the tactile sensing micro-nano structure corresponds to the electrode group one by one. For example, the projection center of the tactile sensing micro-nano structure in a direction perpendicular to the main plane of the semiconductor wafer is located at the center of the electrode group, and the vertex of the downwardly raised curved surface structure of the tactile sensing micro-nano structure abuts the center of the electrode group. Optionally, the projection of the tactile sensing micro-nano structure covers part or all of the electrode group.

[0344] The tactile sensing micro-nano structure forms a capacitor with each electrode of the electrode group. The tactile sensing micro-nano structure serves as one of the plates of the capacitor, and each electrode of the electrode group serves as the other plate of the formed capacitor. Thus, the circuit for measuring capacitance can identify the position of the force generated by the touch relative to the electrode group, such as which electrode is closer and / or which electrode is farther away, by measuring the values ​​of the multiple capacitors formed by the electrode group and based on the relationship between the multiple capacitance values.

[0345] Figure 3B The embodiment is also used to sense the direction of touch. When the force generated by the touch is not perpendicular to the main plane of the semiconductor wafer, but has an angle relative to the normal of the main plane, the deformation generated by the downwardly raised curved surface structure of the tactile sensing micro-nanostructure is uneven in the direction parallel to the main plane of the semiconductor wafer. For example, Figure 3B In the upper left corner electrode area of ​​the electrode group, the deformation produced by the downwardly raised curved surface structure is larger, making the distance from each point of the upper left corner electrode to the lower raised curved surface structure (such as the average distance) smaller; while in the lower right corner electrode area of ​​the electrode group, the deformation produced by the downwardly raised curved surface structure is smaller, making the distance from each point of the lower right corner electrode to the lower raised curved surface structure (such as the average distance) larger; thereby, the capacitance formed by the upper left corner electrode is increased, while the capacitance formed by the lower right corner electrode is decreased; based on this, the angle between the direction of force (i.e., the direction of touch) and the normal of the main plane is identified.

[0346] In some cases, the force of a touch is applied to an area rather than a point. For example, the area of ​​a touch formed by finger pressure is different from the area of ​​a pinprick. Figure 3B The displayed electrode group can also identify the difference in the force of touch acting on the area in different directions or positions within the area, and then identify the characteristics of the touch (such as a finger rather than a needle prick, the area of ​​contact between the fingertip and the sensor chip, or the direction of the finger).

[0347] Optionally, the electrode group includes other numbers of electrodes, such as 2, 3, 5 or even more. Still optionally, the electrodes need not be Figure 3A and 3B The rectangle shown may also be a circle or other shapes that are easy to manufacture. Still optionally, the electrode group is a circular surface as a whole, including a circular electrode located in the center and four sector electrodes surrounding the circular electrode.

[0348] Still optionally, the touch causes the multiple tactile sensing micro-nano structures to deform, and changes the size of the multiple capacitors or multiple groups of capacitors corresponding to the tactile sensing micro-nano structures, thereby identifying more features of the touch (for example, the size and direction of the touch force, the size / shape of the object being touched, etc.).

[0349] Figure 3C A cross-sectional view of a tactile sensing chip according to an embodiment of the present application is shown.

[0350] The multiple metal regions of the top metal layer of the semiconductor wafer of the touch sensing chip, in addition to being used as electrodes to form capacitors with the touch sensing micro-nano structure, also include other metal regions for forming electrical connections with the touch sensing structure. Figure 3C , the metal region 310 is located directly below the tactile sensing micro-nano structure and serves as an electrode; while the metal region 320 contacts the edge of the tactile sensing structure and forms an electrical connection. It can be understood that there is an isolation layer between the metal region 310 and the tactile sensing micro-nano structure and there is no electrical connection between them (thus forming a capacitor). The metal region 310 and the metal region 320 are each connected to the circuit for measuring capacitance in the MOS layer through vias and / or intermediate layers in the semiconductor wafer. As an example, the metal region 320 is connected to the ground so that the tactile sensing structure as a whole has a ground potential and helps to shield the interference of external electromagnetic signals on the tactile sensor.

[0351] Figure 3CIn the example, the support portion at the edge of the tactile sensing structure has a step. The support portion abuts against the packaging substrate or lead frame of the tactile sensing chip to support the tactile sensing structure and form a gap between the tactile sensing structure and the packaging substrate / lead frame. The semiconductor chip is placed in the gap. The step on the support portion abuts against the metal area 320, so that the tactile sensing structure is electrically connected to the circuit in the semiconductor chip. And no additional leads are required to connect the tactile sensing structure and the semiconductor chip. This helps to reduce the manufacturing cost of tactile sensor chips.

[0352] Optionally, the metal area 320 can be a rectangular frame shape distributed along the edge of the top metal layer of the semiconductor wafer. Thus, the metal area 320 has a larger area than the metal area 310 to provide better grounding and better shielding. The shape of the step on the support portion of the tactile sensing structure corresponds to the metal area 320. Still optionally, there is a gap (for example, in a comb or tooth shape) on the support portion of the tactile sensing structure so that the gap area does not contact the top metal layer of the semiconductor wafer. Some metal areas of the top metal layer can form PADs and connect the pins of the chip through gold wires passing through the gaps.

[0353] Figure 3D A cross-sectional view of a tactile sensing chip according to another embodiment of the present application is shown.

[0354] same Figure 3C Compared with the examples shown, Figure 3D The embodiment also includes a support portion 370 located between the tactile sensing structure and the semiconductor wafer. The support portion 370 includes a plurality of support units (372, 374 and 376). The support unit corresponds to the tactile sensing micro-nano structure. When the tactile sensing micro-nano structure is deformed under pressure, the support unit provides support for the tactile sensing micro-nano structure to limit the deformation of the tactile sensing micro-nano structure within a certain range to avoid excessive deformation causing damage to the tactile sensing micro-nano structure. The support unit abuts against the top layer of the semiconductor wafer to support the tactile sensing micro-nano structure. The support portion 370 is made of insulating material.

[0355] Figure 3D A support portion 360 is also shown. The support portion 360 is located at the edge of the tactile sensing structure and is used to support the tactile sensing structure as a whole. The support portion 370 provides support for each tactile sensing micro-nano structure through each supporting unit. Optionally, only the support portion 370 may be used without using the support portion 360.

[0356] The support part 370 is in a grid shape as a whole. After being attached to the tactile sensing structure, the tactile sensing micro-nano structure of the tactile sensing structure is exposed from the mesh of the support part. The part around the mesh becomes a support unit to limit the deformation range of the tactile sensing micro-nano structure.

[0357] Optionally, the support unit has a hole or a hole in the middle to protect or avoid further structures formed on the top metal layer of the semiconductor wafer. For example, some areas of the top metal layer are provided with pads or structures protruding from the surface, which are protected by the hole or hole of the support unit, and the hole or hole becomes a space for accommodating such structures, thereby avoiding squeezing or damaging such structures when the tactile sensing micro-nano structure is deformed.

[0358] Figure 4A A circuit schematic diagram of a tactile sensor according to an embodiment of the present application is shown.

[0359] The touch sensor chip includes a circuit for measuring capacitance formed in a semiconductor wafer ( Figure 4A In the figure, a CDC (capacitance digital converter) is shown, a switch array, and a plurality of capacitors formed by electrodes of an electrode array of a top metal layer of a semiconductor wafer and corresponding tactile sensing micro-nano structures of a tactile sensing structure. Each electrode of the electrode array is connected to the switch array through holes and / or wires formed in the semiconductor wafer. Optionally, the tactile sensing structure is connected to ground. For example, in Figure 4A Not shown, the tactile sensing structure is connected to the switch array through one or some metal areas in the top metal layer that are different from the metal areas that provide the electrode array, and then connected to the ground through the switch array. The switch array can also connect the tactile sensing structure to the CDC.

[0360] The switch array connects each electrode of the electrode array to a circuit for measuring capacitance. The circuit for measuring capacitance has, for example, a single port for measuring self capacitance (e.g. Figure 4A As shown), or two or more ports measure mutual capacitance. For example, the number of ports of the circuit for measuring capacitance is significantly less than the number of electrodes of the electrode array. The switch array selectively and / or time-sharingly electrically connects the electrodes of the electrode array and optionally the tactile sensing structure to the circuit for measuring capacitance, so that even a single circuit for measuring capacitance can measure the capacitance formed by each of the multiple electrodes of the electrode array.

[0361] As an example, the capacitance measuring circuit is connected to each electrode of the electrode array in a specified order through the switch array to realize the measurement and scanning of the capacitance or capacitance change of multiple capacitors. As another example, multiple electrodes of the electrode array are simultaneously connected to the capacitance measuring circuit through the switch array, so that these multiple electrodes together form the plates of the same capacitor, so as to obtain capacitors located at different positions, with different shapes and different capacitances, thereby providing diversified tactile perception capabilities.

[0362] Optionally, the switch array connects the electrodes and / or the tactile sensing structure to ground. Grounding can provide a reference potential or provide shielding for adjacent electrodes to reduce or eliminate interference.

[0363] Still optionally, the switch array connects the tactile sensing structure (but not the electrodes of the electrode array) to a circuit for measuring capacitance. The tactile sensing structure forms a capacitance with an object in the external environment. The tactile sensor chip is sensed to be approaching an external object (without contact) by measuring such capacitance changes. The tactile sensing structures of two or more tactile sensor chips can be used as plates to form capacitance respectively. Such capacitance changes are measured to sense the approach of external objects in a larger spatial range. Multiple tactile sensors can be interconnected to form a distributed capacitive sensor system. For the working principle of the distributed capacitive sensor system, please refer to Chinese patent applications such as application numbers 202110964601.4, 202110957229.4, 202210309501.2, 202210309297.4, 202210303165.0 and 202210303160.8.

[0364] Optionally, the semiconductor chip further includes a processor, a sequencer for generating control signals for the switch array, a communication unit or a network unit for communicating with a network, an analog signal router for transmitting analog signals between multiple electrodes / ports, a neural network unit, and / or a driving circuit for driving an external object such as a finger to generate mechanical motion, etc. Still optionally, the semiconductor chip further includes an analog signal port to connect to the analog signal ports of other semiconductor chips, thereby transmitting analog signals across wafers / chips between multiple semiconductor chips.

[0365] Figure 4B A circuit schematic diagram of a tactile sensor according to another embodiment of the present application is shown.

[0366] same Figure 4A Compared with the examples shown, Figure 4B In an embodiment of the present invention, a semiconductor amplifier array is further formed in the semiconductor wafer. The semiconductor amplifier array includes a plurality of semiconductor amplifiers, each semiconductor amplifier corresponding to one of the electrodes of the electrode array. The electrodes of the electrode array are coupled to the input ends of the corresponding semiconductor amplifiers, and the output ends of the semiconductor amplifiers are connected to the circuit for measuring capacitance through the connection switch array. The semiconductor amplifiers amplify the electrical analog quantity of the electrodes to improve the accuracy or resolution of measuring the capacitance formed by the electrodes.

[0367] The semiconductor amplifier is, for example, a single MOS tube, the electrode is coupled to the gate of the MOS tube, and the drain of the MOS tube is connected to the switch array. For another example, the semiconductor amplifier is an operational amplifier circuit formed by multiple MOS tubes or other forms of operational amplifier circuits.

[0368] Optionally, in the semiconductor wafer, the semiconductor amplifier is formed in the middle layer below the electrode array, so that the electrode can be directly connected to the input of the semiconductor amplifier through a via without adding complex wiring. Still optionally, the electrodes of the electrode array are coupled to the input of the corresponding semiconductor amplifier through an electric field without the need for direct electrical connection. For example, the capacitor formed by the electrode is charged, the charge accumulates on the electrode and causes an electric field change, which acts on the input of the semiconductor amplifier, and the output of the semiconductor amplifier generates an amplified output signal.

[0369] Still optionally, due to the amplification effect of the semiconductor amplifier on the electrical signal on the electrode, the capacitance corresponding to the electrode can be effectively identified by the circuit measuring the capacitance even if the capacitance is small. Compared with large capacitance capacitors, small capacitance capacitors can have lower cost, smaller area and smaller volume. As a result, the area of ​​the electrodes of the electrode array can be made smaller (to obtain higher spatial resolution, such as 0.1mmx0.1mm), the isolation layer on the electrode array can be thicker (more solid), and the tactile sensing micro-nano structure can better cover or wrap the electrodes in space (reducing the interference of electromagnetic signals in the external environment on capacitance measurement).

[0370] According to the packaging of the tactile sensor chip of the embodiment of the present application, in addition to protecting the semiconductor wafer in the chip and providing pins for connecting the chip to an external circuit, a tactile sensing structure that can be deformed under the action of force is also provided. The deformation produced by one or more tactile sensing micro-nano structures of the tactile sensing micro-nano structure array of the tactile sensing structure can distinguish the magnitude, direction, contact surface shape and / or movement trajectory of the force acting on the package. The tactile sensing structure itself is conductive, so that a single equipotential surface can be provided, or several equipotential regions, and the equipotential regions have equal potentials inside. The tactile sensing structure is connected to the packaged semiconductor wafer through a single or a few electrical connections, so that the circuit in the semiconductor wafer can use the tactile sensing structure as part of the circuit to construct the circuit, thereby breaking through the limitations of the integrated circuit process to obtain chips with more diverse functions or performance.

[0371] The limitations of integrated circuit technology include, for example, limited materials that can be used, limited shapes / sizes of processed parts, difficulty in providing flexible structures, high design and manufacturing costs, etc. However, the chip package of the embodiment of the present application, through the tactile sensing structure outside the semiconductor chip and not requiring the use of integrated circuit technology to form a component of the application circuit together with the semiconductor chip, thus breaking through the limitations of the integrated circuit technology and expanding the functions of the implemented chip.

[0372] Therefore, in addition to being used for packaging the semiconductor wafer according to the embodiment of the present application, the packaging of the tactile sensor chip according to the embodiment of the present application can also be used for other semiconductor wafers.

[0373] Figure 5 The package of the tactile sensor chip according to the embodiment of the present application is shown.

[0374] The package of the tactile sensor chip includes a package shell, a tactile sensing unit and a lead frame. In some embodiments, the lead frame is replaced by a package substrate. In some other embodiments, the lead frame and the package substrate exist at the same time.

[0375] The shape of the package shell is a rectangular frame, which is used to buckle the tactile sensing structure on the lead frame / package substrate. The main plane of the package shell includes an opening, so that after the tactile sensing structure is buckled on the lead frame / package substrate, the tactile sensing micro-nano structure array of the tactile sensing structure is exposed to the external environment. Optionally, the upper surface of the tactile sensing structure is also covered with an isolation layer to protect the tactile sensing structure from environmental pollution. For example, it prevents substances such as water, oil, and dust from contaminating the tactile sensing structure or entering the inside of the tactile sensor chip. The isolation layer above the tactile sensing structure is, for example, insulating. The edge of the package shell extends downward to form a support structure, which is used to support the package shell when the package shell abuts against the lead frame / package substrate, and to form a space between the package shell and the lead frame / package substrate to accommodate the tactile sensing structure and the semiconductor chip. Optionally, the package shell is formed by an injection molding process. For example, after the tactile sensing structure and the semiconductor chip are fixed to the lead frame / package substrate, a mold is set thereon and injection molding is formed to form a package shell.

[0376] Optionally, the tactile sensing structure includes a main plane formed by an array of tactile sensing micro-nano structures and a support portion located at the edge of the main plane. After the packaged shell is buckled onto the lead frame / package substrate, the support portion of the tactile sensing structure supports the tactile sensing portion relative to the lead frame / package substrate and forms a space for accommodating the semiconductor chip. Optionally, the support portion partially transmits the force of the touch on the tactile sensing structure to the lead frame / package substrate to reduce the size of the force acting on the top metal layer of the semiconductor chip. The support portion of the tactile sensing structure corresponds to the support portion of the package shell. Still optionally, the support portion of the tactile sensing structure also forms a step (see also Figure 3C ), so that part of the support portion of the tactile sensing structure abuts against the lead frame / package substrate, and another part abuts against the metal area (320 in FIG. 3 ) at the edge of the top metal layer of the semiconductor wafer. Thus, the support portion of the tactile sensing structure is also electrically connected to the metal layer 320, and the chip manufacturing step of setting a connection line between the tactile sensing structure and the semiconductor wafer is omitted. It can be understood that it is also feasible to add a connection line between the tactile sensing structure and the semiconductor wafer to provide an electrical connection.

[0377] Figure 6 The packaging process flow of the tactile sensor chip according to the embodiment of the present application is demonstrated.

[0378] In order to obtain a tactile sensor chip, a wafer, a tactile sensing structure, a lead frame and / or a packaging substrate are prepared. The semiconductor chip obtained by cutting the wafer is pasted to the packaging substrate / lead frame. Optionally, a PAD (pad) is formed in a designated area of ​​the top metal layer of the semiconductor wafer, and the PAD is connected to the packaging substrate / lead frame with a lead. It can be understood that in the previous embodiments, the metal area of ​​the top metal layer that serves as the electrode array and the metal area that forms an electrical connection with the tactile sensing structure does not need to form a PAD, nor does it need to set a lead to connect the packaging substrate / lead frame, but it is not excluded that in some embodiments, some electrodes of the electrode array and / or the metal area of ​​the edge area of ​​the top metal layer form a PAD and are connected to the packaging substrate / lead frame through leads.

[0379] Next, the tactile sensing structure is mounted on the surface of the semiconductor wafer. Optionally, when the edge of the tactile sensing structure has a support portion, the support portion is also abutted against a designated metal area of ​​the semiconductor wafer. Still optionally, the tactile sensing structure and the semiconductor wafer are fixed by bonding.

[0380] Then, a packaging shell is provided. For example, a packaging shell encapsulating the tactile sensing structure is formed by injection molding, and the tactile sensing structure is further fixed to the packaging substrate / lead frame. The opening of the packaging shell is also formed by injection molding. Optionally, the packaging shell is a prefabricated part and is mounted on the surface of the tactile sensing structure. And the packaging shell, the tactile sensing structure and the packaging substrate / lead frame are then encapsulated by injection molding, and the gap between the packaging shell and the tactile sensing structure and the packaging substrate / lead frame is closed.

[0381] The package substrate / lead frame is cut to obtain a packaged tactile sensor chip.

[0382] Figure 7 An exploded view of components of a tactile sensor chip according to yet another embodiment of the present application is shown.

[0383] See also Figure 7 The tactile sensor chip includes a semiconductor wafer, a tactile sensing structure, a flexible layer, a packaging shell and a packaging base. Figure 1B The difference between the tactile sensor chip is that Figure 7In an embodiment, the tactile sensing structure is in the shape of a metal grid. The tactile sensing structure in the shape of a metal grid can be formed, for example, by a 3D printing process. The flexible layer covers the tactile sensing structure to provide protection for the tactile sensing structure and to prevent the metal grid from stabbing or cutting the skin of a user who contacts the tactile sensing structure. The flexible layer is, for example, electrically insulating. Optionally, in addition to applying a force perpendicular to the main plane of the tactile sensing structure to the tactile sensing structure, the flexible layer also provides a force with a certain angle to the perpendicular direction, so that the force has a component parallel to the main plane of the tactile sensing structure, so that the tactile sensing micro-nano structure of the tactile sensing structure undergoes different deformations due to the forces in multiple directions, thereby facilitating the identification of the occurrence, magnitude and / or direction of the force generated by the touch by measuring the change in capacitance. In addition to fixing the tactile sensing structure, the packaging shell is also used to fix the flexible layer. The material of the flexible layer is, for example, silicone.

[0384] Figure 7 In the example, the tactile sensing structure includes a plurality of upward protrusions. These protrusions can be inserted into or squeezed into the flexible layer to fix the flexible layer and the tactile sensing structure, and the force component transmitted by the flexible layer parallel to the main plane of the tactile sensing structure acts on these protrusions, thereby driving the tactile sensing micro-nano structure to deform. For example, each tactile sensing micro-nano structure has one of the above-mentioned protrusions, and the protrusion is located at the top of the upper part of the tactile sensing micro-nano structure. The lower part of the tactile sensing micro-nano structure corresponds to the electrode of the electrode array of the top metal layer of the semiconductor wafer. There is no electrical connection between the tactile sensing micro-nano structure and the corresponding electrodes of the electrode array, so that the tactile sensing micro-nano structure and the electrodes in the electrode array form a capacitor whose capacitance change can be measured. The isolation layer above the top metal layer of the semiconductor wafer plays the role of electrically isolating the electrode array from the tactile sensing structure, and acts as a dielectric of the capacitor to increase the capacitance value. When the tactile sensing structure is touched, the tactile sensing micro-nano structure is deformed, so that the distance between the two electrodes of the capacitor changes, and then the capacitance value changes. Touch is sensed by measuring the change in capacitance value.

[0385] Fig. 8A Shows the basis Figure 7 A tactile sensing micro-nanostructure array of a tactile sensing structure of an embodiment.

[0386] See also Fig. 8A, the tactile sensing micro-nano structure array is in a grid shape. Each tactile sensing micro-nano structure of the tactile sensing micro-nano structure array is located around the mesh of the grid. The tactile sensing micro-nano structure is spherical or hemispherical. The mesh is hollow to reduce the use of metal materials and make it easier for the tactile sensing structure to drive other tactile sensing micro-nano structures around the force application point to deform under the action of force. Adjacent tactile sensing micro-nano structures are connected by beams. Multiple beams are also arranged in rows and columns and form the edges of the mesh. The beam extends in the main plane of the tactile sensing structure. The tactile sensing micro-nano structure is surrounded by, for example, 4 meshes and 4 beams, and the mesh is surrounded by 4 tactile sensing microstructures and 4 beams.

[0387] Although referred to as beams and holes, the beams, holes, and tactile sensing micro-nano structures can be formed from the same material and formed in one step through an additive process such as 3D printing, without the need for an assembly process for the various components. Optionally, in different embodiments, the size of the tactile sensing microstructure changes, and the beams connecting adjacent tactile sensing microstructures are shortened accordingly, or even degenerated into points. For the purpose of simplicity, in this application, the beam also includes a structural form that degenerates into a point connecting adjacent tactile sensing microstructures in the row / column direction, and accordingly, the hole is surrounded by the 1 / 4 edge of the four tactile sensing micro-nano structures surrounding it.

[0388] Figure 8B Shows the basis Fig. 8A A local enlarged view of the tactile sensing micro-nano structure of the tactile sensing structure of an embodiment.

[0389] Figure 8B A partial view of the tactile sensing micro-nanostructure array shows four adjacent tactile sensing micro-nanostructures (810, 812, 814 and 816). The four tactile sensing micro-nanostructures are connected by four beams (820, 822, 824 and 826). The four tactile sensing micro-nanostructures and the four beams surround the mesh 830. The four tactile sensing micro-nanostructures (810, 812, 814 and 816) are arranged in rows and columns to form two rows and two columns. The four beams (820, 822, 824 and 826) are also arranged in rows and columns to form two rows and two columns.

[0390] The surface of the tactile sensing micro-nano structure and the beam has multiple holes, and the tactile sensing micro-nano structure is hollow to reduce the amount of metal material used and enhance its flexibility. Figure 8BIn the figure, the upper surface of the tactile sensing micro-nanostructure (810, 812, 814 and 816) is a hemispherical or arc-shaped surface. Other shapes of upper surfaces are also optional. Generally, the upper surface of the tactile sensing micro-nanostructure is set to a curved surface that bulges upward. The protrusion on the tactile sensing micro-nanostructure is located at the center of the curved surface that bulges upward, in other words, at the highest point of the curved surface that bulges upward, so that the curved surface that bulges upward is in better contact with the flexible layer. It can be understood that when, for example, the tactile sensing microstructure 812 is deformed by the force of touch, the adjacent tactile sensing microstructures (810, 814 and 816) can also produce larger or smaller deformations driven by the beams (820, 822, 826 and 824). For another example, when the force generated by touch acts on the mesh 830, the four tactile sensing micro-nanostructures (810, 812, 814 and 816) are all deformed. As the position of the force deviates from the center of the mesh 830, the deformations of the tactile sensing micro-nano structures (810, 812, 814 and 816) are different. The difference in deformation of the tactile sensing microstructures corresponds to the difference in their capacitance values, thereby identifying the position, magnitude and / or direction of the force.

[0391] Figure 8C A partially enlarged perspective view of a tactile sensing micro-nano structure of a tactile sensing structure according to an embodiment of the present application is shown.

[0392] same Figure 8B compared to, Figure 8C Also shown are the lower shapes of the tactile sensing micro-nano structures (810, 812, 814, and 816) and the electrode groups (840, 842, 844, and 846) of the electrode array corresponding to the tactile sensing micro-nano structures. Figure 8C In the example, each electrode group (840, 842, 844 and 846) includes 4 electrodes arranged in 2 rows and 2 columns. The tactile sensing micro-nanostructure (810, 812, 814 and 816) is located vertically above the area where the corresponding electrode group is located, and the projection of the tactile sensing micro-nano in the vertical direction is located at the center of the electrode group. Thus, the tactile sensing micro-nanostructure forms a capacitor with each electrode of the corresponding electrode group, and one tactile sensing micro-nanostructure forms 4 measurable capacitors.

[0393] The lower part of the tactile sensing micro-nano structure is also hemispherical. Thus, the tactile sensing micro-nano structure as a whole is spherical or two oppositely buckled hemispheres, and the bottom surfaces of the hemispheres are opposite. Optionally, the bottom surface area of ​​the lower hemisphere is smaller than the bottom surface area of ​​the upper hemisphere. Still optionally, the bottom surface area of ​​the upper hemisphere is larger than the area where the corresponding electrode group is located, so that the tactile sensing micro-nano structure also provides shielding for the electrode group. The lower hemisphere is also hollow and has multiple holes on it. The tactile sensing micro-nano structure is hollow as a whole.

[0394] Figure 8CThe displayed tactile sensing micro-nanostructure helps to sense the magnitude and / or direction of the force generated by touch. When the force generated by touch has an angle with the vertical direction, or has a component in the direction parallel to the main plane of the tactile sensing structure, the component causes the deformation of the upper hemisphere and the lower hemisphere in the area where the four electrodes of the corresponding electrode group are located to be different, so that the capacitance or capacitance change of the four capacitors formed by the tactile sensing micro-nanostructure and the electrode group are not all the same. Based on this difference, the magnitude and / or direction of the force can be identified, and the degree of displacement of the position of the force application point relative to the center of the electrode group can also be identified.

[0395] Fig.9A Shows the basis Figure 7 A three-dimensional image of a tactile sensing micro-nanostructure of an embodiment.

[0396] Fig.9A , a tactile sensing micro-nano structure 920, an electrode group 940 and a flexible layer 950 are shown. The protrusion 927 on the tactile sensing micro-nano structure 920 penetrates deep into the flexible layer 950, so that the component of the force generated by the touch in the direction parallel to the main plane of the flexible layer pushes the protrusion 927, and drives the tactile sensing micro-nano structure 920 to produce corresponding deformation. Optionally, the protrusion 927 is cylindrical and has a small radial dimension, so that during installation, the protrusion 927 can be squeezed into or pierced into the flexible layer 950 by extrusion. Still optionally, a hole is set on the lower surface of the flexible layer 950 to accommodate the corresponding protrusion 927, so that the protrusion 927 can be inserted into the hole of the flexible layer 950 during installation, and it also helps to align the flexible layer with the tactile sensing micro-nano structure.

[0397] Fig.9A It is also shown that the beams of the tactile sensing structure (eg, beam 910 ) are hollow.

[0398] Fig. 9B Shows the basis Figure 7 A side view of a tactile sensing micro-nanostructure of an embodiment.

[0399] Fig. 9B It is more clearly shown that the protrusion on the upper part of the tactile sensing micro-nanostructure extends into the flexible layer. The bottom area of ​​the upper hemisphere of the tactile sensing micro-nanostructure is larger than the bottom area of ​​the lower hemisphere. The center of the upper hemisphere and the center of the lower hemisphere roughly overlap in the vertical direction. The top of the lower hemisphere (located below) has a gap with the electrode of the corresponding electrode group instead of electrical contact. The beam extends along the main plane direction of the tactile sensing structure.

[0400] Optionally, with Fig. 9BUnlike the one shown in FIG. 1 , the beam of the tactile sensing structure is arched and bulges upward in the area between the two tactile sensing micro-nano structures it connects. The arched structure can change the degree to which the deformation of one tactile sensing micro-nano structure affects the deformation of an adjacent tactile sensing micro-nano structure to facilitate the recognition of the position, magnitude and / or direction of the force.

[0401] Figures 10A-10G A tactile sensor chip according to yet another embodiment of the present application is shown.

[0402] In the above embodiments, since the tactile sensing micro-nano structures are electrically connected to each other, the tactile sensing structure as a whole has the same electrical potential. Figures 10A-10G In the embodiment of the present invention, the tactile sensing structure includes four parts (1010, 1012, 1014 and 1016) that are electrically isolated from each other. The tactile sensing micro-nano structures in each part (1010, 1012, 1014 and 1016) of the tactile sensing structure are electrically connected to each other so as to have the same electric potential. However, there is no electrical connection between the parts (1010, 1012, 1014 and 1016) of the tactile sensing structure. However, an electrical connection can be formed between the parts (1010, 1012, 1014 and 1016) of the tactile sensing structure through a switch array in a semiconductor chip.

[0403] Each part (1010, 1012, 1014 and 1016) of the tactile sensing structure is respectively connected to different metal areas of the top metal layer, and then respectively connected to the switch array in the semiconductor chip. Through the switch array, each part (1010, 1012, 1014 and 1016) of the tactile sensing structure can be connected to the ground at the same time, or respectively connected to the ground, the circuit for measuring capacitance or other potential. In one example, the two parts (1010 and 1012) of the tactile sensing structure are respectively connected to the two ports (EXEC and CIN) of the circuit for measuring capacitance by the switch circuit, so that the two parts (1010 and 1012) of the tactile sensing structure are used as two plates of the capacitor, and the circuit for measuring capacitance senses that there is an object approaching (but not touching) the tactile sensing structure in the external environment by measuring the mutual capacitance between the two plates. The two parts (1010 and 1012) of the tactile sensing structure can also be connected to the ground at the same time to provide shielding for the electrode array of the top metal layer to prevent external electromagnetic signals from interfering with the circuit for measuring capacitance.

[0404] Optionally, part (1010, 1012, 1014 or 1016) or the entire tactile sensing structure can be used as a capacitor plate and form a capacitor with the entire or part of the tactile sensing structure of other tactile sensor chips, thereby sensing the proximity of an object in a larger spatial range relative to the tactile sensor chip.

[0405] See also Fig. 10BThe top metal layer of the semiconductor wafer accordingly includes four regions, each region corresponding to an isolated portion of the tactile sensing structure. Optionally, this division of the top metal region may be only a logical division, without setting a structure on the top metal layer to distinguish these regions.

[0406] See also Fig. 10D , since there is no electrical connection between the isolated parts 1010 and 1012 of the tactile sensing structure, an insulating portion 1090 is provided between the isolated parts 1010 and 1012. Optionally, the insulating portion 1090 is a gap rather than a physical entity (e.g., an air gap). Support portions 1080 and 1082 at the edges of the tactile sensing structure support the tactile sensing structure on the package plate / lead frame. Support portions 1084 and 1086 are also provided to support the tactile sensing structure on the semiconductor wafer. Support portions 1084 and 1086 abut against the top metal layer of the semiconductor wafer. Optionally, supports 1080 and 1084 jointly support the isolated part 1010, while support portions 1086 and 1082 jointly support the isolated part 1012. There is a gap between support portions 1084 and 1086 to avoid forming an electrical connection.

[0407] Due to the existence of the support parts 1084 and 1086, the spacing of the tactile sensing micro-nano structures near the isolated parts 1010 and 1012 may be different from the spacing of the tactile sensing micro-nano structures inside the isolated parts. Accordingly, the spacing of the electrodes at the corresponding positions of the electrode array of the semiconductor top metal layer is also different from the spacing of other electrodes.

[0408] Fig. 10D A support section with multiple support units is also shown. Fig.10E The support part is in a grid shape as a whole. After being attached to the tactile sensing structure, the tactile sensing micro-nano structure of the tactile sensing structure is exposed from the mesh of the support part. The part around the mesh becomes a support unit to limit the deformation range of the tactile sensing micro-nano structure.

[0409] Corresponding to the four isolated parts of the tactile sensing structure, the support portion also includes four corresponding grid-shaped support parts.

[0410] Fig.10F A circuit schematic diagram of a tactile sensor chip according to an embodiment of the present application is shown.

[0411] See also Fig.10FCDC can use different isolated parts of tactile perception structure as capacitor plates and construct capacitance. For example, isolated parts 1010 and 1012 are used as capacitor plates respectively, and the capacitance change of the capacitance formed by these two capacitor plates is measured to sense the proximity of external objects to parts 1010 and 1012. For example, the isolated part 1010 is connected to the EXEC port (for transmitting the excitation signal) of CDC, and the isolated part 1012 is connected to the CIN port (for receiving the response signal) of CDC, so that CDC can measure the capacitance. For another example, the switch array connects the isolated parts 1010 and 1012 together and connects them to the EXEC port to form an electrode plate with a larger area, and connects the isolated parts 1014 and 1016 together and connects them to the CIN port. By constructing a larger capacitor plate, it is possible to detect the proximity of objects within a larger external space.

[0412] exist Fig.10F In an embodiment, the CDC need not connect electrodes of the electrode array on the top metal layer.

[0413] Figure 10G Shown with Fig. 10C Corresponding to multiple regions of the top metal layer of the semiconductor wafer.

[0414] exist Figure 10G In an embodiment of the present invention, the metal regions of the top metal layer of the semiconductor wafer include, for example, three types. The first type of metal regions serve as an electrode array, each of which forms one of the electrodes of the electrode array. The second type of metal regions (1060) are used to form an electrical connection with the tactile sensing structure. Figure 10G In the example, the first type of metal area is divided into four parts (each part is marked as 1050, 052, 1054 and 1056), corresponding to Fig. 10B The tactile sensing structure has four electrically isolated parts (1010, 1012, 1014 and 1016) from each other.

[0415] Figure 10G In the example, the second type of metal region (1060) is arranged along the edge of the top metal layer of the semiconductor wafer. It can be understood that when the tactile sensing structure has multiple electrically isolated parts, the second type of metal region also provides multiple regions accordingly, so that each electrically isolated part of the tactile sensing structure can be electrically connected to the semiconductor wafer individually or collectively. In order to facilitate the formation of electrical connection, the isolation layer is not covered on the second type of metal region (1060). Optionally, the tactile sensing structure is connected to the semiconductor wafer through a gold wire, and accordingly, a PAD is formed on the second type of metal region and the gold wire is welded.

[0416] The third type of metal region (1070, 1072, 1074) is used to form a PAD and is connected to the pins of the tactile sensor chip through gold wires, so as to electrically connect the semiconductor wafer to the pins of the tactile sensor chip.

[0417] Understandably, Figure 10G The arrangement of the various metal regions in the figure is only an example, and the arrangement of the various metal regions with different numbers, positions and / or shapes can be adopted as needed.

[0418] Fig.11 An exploded view of various parts of a tactile sensor chip according to yet another embodiment of the present application is shown.

[0419] See also Fig.11 The tactile sensor chip includes a semiconductor wafer, a piezoelectric material film, an adhesive film, a packaging shell and a packaging base. Figure 1B or Figure 7 The difference between the tactile sensor chip is that Fig.11 In the embodiment of the present invention, the tactile sensor chip does not use a tactile sensing structure, but is replaced by a piezoelectric material film or a dielectric elastomer (DE) film.

[0420] The piezoelectric material film or dielectric elastomer film replaces the top metal layer attached to the semiconductor chip through the adhesive film. The packaging shell fixes the piezoelectric material film and the semiconductor chip to the packaging plate / lead frame.

[0421] When a piezoelectric material is subjected to pressure, electric charges will accumulate on its surface. By sensing the size of the electric charges, the magnitude of the pressure on the piezoelectric material can be identified. Fig.11 In an embodiment, the lower surface of the piezoelectric material film or the dielectric elastomer film (the surface facing the top metal layer of the semiconductor wafer) includes a plurality of charge sensing electrodes formed of a piezoelectric material. The plurality of charge sensing electrodes are arranged in rows and columns and correspond one to one with the electrodes of the electrode array of the top metal layer. When the piezoelectric material film or the dielectric elastomer film is attached to the top metal layer, the spatial position of the charge sensing electrode and the corresponding electrode are opposite and adjacent, and the projections of the two in the direction perpendicular to the main plane of the semiconductor wafer substantially overlap. Thus, the induced charge formed on the charge sensing electrode acts on the electrode, so that the pressure is sensed by measuring the amount of the induced charge through the electrode. Optionally, there is a gap between each charge sensing electrode. Optionally, the area of ​​the charge sensing electrode is substantially the same as the area of ​​the electrode of the corresponding electrode array, or the area of ​​the charge sensing electrode is larger than the corresponding electrode.

[0422] The upper surface of the piezoelectric material film or the dielectric elastomer film includes a surface electrode. The surface electrode is, for example, in a layered form and, for example, entirely covers the upper surface of the piezoelectric material film. The surface electrode is used to provide, for example, a ground plane and to play a shielding role. The surface electrode is connected to, for example, a second type metal region (1060, also see Fig. 10C ). A dielectric exists between the surface electrode and the charge sensing electrode, so that there is no electrical connection between the surface electrode and the charge sensing electrode, and the surface electrode and each charge sensing electrode form a capacitor respectively. Under the action of the force of the touch to be sensed on the piezoelectric material film, the piezoelectric material film is deformed, so that at the position where the force acts, charges are accumulated on the charge sensing electrode, and the shape of the space between the piezoelectric material film or the dielectric elastomer film and the electrode of the electrode array at this position changes.

[0423] The adhesive film attaches the piezoelectric material film or the dielectric elastomer film to the top metal layer. A plurality of holes are formed on the adhesive film, and the positions and shapes of the holes enable the charge sensing electrodes to be attached to and electrically connected to the corresponding electrodes on the top metal layer. Accordingly, no isolation layer is provided on the top metal layer, or no isolation layer is provided in the electrode array region or the region where the electrodes are located on the top metal layer, so that the electrodes of the top metal layer can be electrically connected to the charge sensing electrodes.

[0424] Since the adhesive film has thickness, there may be a gap between the charge sensing electrode of the piezoelectric material film or the dielectric elastomer film and the electrode of the corresponding top metal layer. It can be understood that the gap is caused by the manufacturing process and is difficult to eliminate. Therefore, the existence of the gap is uncertain. Since the adhesive film is thin and can be compressed, and the charge sensing electrode and the electrode of the top metal layer may slightly protrude from the main plane of the structure in which they are located, in some cases, even if the adhesive film has thickness, the charge sensing electrode and the electrode of the top metal layer can be attached and electrically connected, and the gap does not exist at this time. When the piezoelectric material film or the dielectric elastomer film is subjected to pressure, the gap will also decrease or disappear. When the gap exists, the gap acts as a dielectric, so that the charge sensing electrode and the electrode of the top metal layer respectively act as capacitor plates to form a capacitor (called the lower capacitor), and the charge sensing electrode also forms another capacitor (called the upper capacitor) with the surface electrode of the piezoelectric material film or the dielectric elastomer film as capacitor plates, and the upper capacitor and the lower capacitor are connected in series. When the gap does not exist, the charge sensing electrode is electrically connected to the electrode of the top metal layer, so that the whole serves as a capacitor plate and forms a capacitor with the surface electrode of the piezoelectric material film or the dielectric elastomer film.

[0425] Whether this gap exists or not, Fig.11In the embodiment of the present invention, the circuit for measuring capacitance located in the semiconductor chip can identify the presence of touch by measuring the capacitance value. When the force caused by the touch is applied, the shape of the space between the piezoelectric material film or the dielectric elastomer film and the electrode of the top metal layer changes. If the gap does not exist before the touch, the pressure causes the capacitance formed by the surface electrode of the piezoelectric material film or the dielectric elastomer film and the electrode of the top metal layer to change, and the touch is identified by detecting this change. If the gap exists before the touch, and the pressure causes the gap to disappear, the upper capacitor and the lower capacitor originally connected in series become a single capacitor, and its capacitance value changes, and the touch is identified by detecting this change. If the gap exists before the touch, and the gap still exists after the pressure, but the deformation causes the capacitance value of both or one of the upper capacitor and the lower capacitor to change, so that the overall capacitance value of the series capacitor changes, and the touch is identified by detecting this change.

[0426] The adhesive film is optional. In some embodiments, the adhesive film is not used, and the piezoelectric material film or the dielectric elastomer film is fixed to the surface of the semiconductor wafer by the packaging shell.

[0427] It can be understood that under the action of force, charge is accumulated on the charge sensing electrode. This charge affects the measured capacitance value and also changes the measured capacitance value. However, the charge generated by piezoelectricity can change over time, and this change occurs in a relatively short time, so even if the touch remains, the charge generated by piezoelectricity will change. However, the change in capacitance caused by the change in the spatial shape between the capacitor plates is not affected by time. Therefore, detecting the distribution of the change in capacitance value over time helps to more effectively identify touch.

[0428] Still optionally, under the action of force, the charges accumulated on the charge sensing electrode can be individually identified without having to be identified by measuring capacitance. For example, the accumulated charges produce a change in potential, and the charge loss process forms a current. The potential (voltage) or current is measured by the electrodes of the top metal layer to detect the presence of the force acting on the piezoelectric material film. And the position of the touch acting on the piezoelectric material film is identified based on which electrode or electrodes in the top metal layer have a specified or changed potential (voltage) or current. Accordingly, a circuit for measuring voltage and / or a circuit for measuring current is set in the semiconductor chip to detect the potential (voltage) or current.

[0429] Still optionally, one or more of a circuit for measuring capacitance, a circuit for measuring voltage, or a circuit for measuring current is provided in the semiconductor chip to sense the size, direction, and / or position of the touch by measuring different physical quantities.

[0430] Still optionally, a single circuit for measuring voltage can be used to measure capacitance in addition to measuring the potential (voltage) or current generated by piezoelectric induction. The principle of using a circuit for measuring voltage to measure capacitance is prior art. Similarly, a single circuit for measuring current can be used to measure capacitance in addition to measuring the potential (voltage) or current generated by piezoelectric induction.

[0431] Still optionally, when any two or three of the circuits for measuring capacitance, the circuits for measuring voltage, and the circuits for measuring current are included in the semiconductor chip, the input ports of these circuits are connected to the switch array. The switch array connects the electrodes of the top metal layer to different measurement circuits in a time-sharing manner. Thus, there is no need to add additional electrodes of the top metal layer, nor to increase the connection between the electrodes and the switch array, and the measurement of more physical quantities can be achieved. In other words, the electrodes of the top metal layer are used to measure both capacitance and induced charge.

[0432] Furthermore, in some application scenarios, the induced charge and capacitance are measured successively for different purposes. In one embodiment, a semiconductor chip includes a circuit for measuring voltage and a circuit for measuring capacitance. Normally, the circuit for measuring capacitance is dormant to reduce power consumption, while the circuit for measuring voltage remains turned on and measures the appearance of induced charge. When the tactile sensor is subjected to pressure, charges accumulate on one or some charge sensing electrodes and cause a change in potential. The pressure is identified by the circuit for measuring voltage, and the circuit for measuring capacitance is turned on in response. The magnitude and direction of the force caused by the touch can be better identified by the circuit for measuring capacitance.

[0433] Fig.11 In the embodiment, optionally, the tactile sensor chip further includes a common conductive layer and a conductive double-sided adhesive.

[0434] The common ground conductive layer is located on the upper surface of the piezoelectric material film, and is attached to and electrically connected to the surface electrode of the piezoelectric material film or the dielectric elastomer film. The common ground conductive layer is connected to the ground, thereby providing shielding for the piezoelectric material film and the semiconductor wafer covered thereunder, so as to reduce or eliminate interference from environmental electromagnetic noise. Optionally, the common ground conductive layer also plays the role of dustproof, waterproof, oil-proof, collision-proof, wear-resistant, heat-dissipating, etc.

[0435] Conductive double-sided tape is used to connect the second type of metal area (1060, also see Fig. 10C) and the piezoelectric material film. For example, the surface electrode of the piezoelectric material film or the dielectric elastomer film is connected to the second type of metal area. The adhesive film is insulating, while the conductive double-sided adhesive can conduct electricity. Optionally, the conductive double-sided adhesive adheres the edge of the second type of metal area to the common conductive layer, and the common conductive layer forms an electrical connection with the surface electrode. Optionally, there is a gap between the conductive double-sided adhesive and the adhesive film to avoid forming an electrical connection. The shape of the conductive double-sided adhesive is consistent with the shape of the second type of metal area, for example. Fig.11 In the example shown in FIG. 1 , the conductive double-sided tape is in the shape of a rectangular frame.

[0436] Fig.12 A surface view of a piezoelectric material film or a dielectric elastomer film according to an embodiment of the present application is shown.

[0437] Fig.12 The left side of shows the upper surface of the piezoelectric material film or the dielectric elastomer film, and the right side shows the lower surface of the piezoelectric material film or the dielectric elastomer film.

[0438] Fig.12 In the example, the upper surface of the piezoelectric material film or the dielectric elastomer film is entirely covered with the surface electrode. The entire surface electrode can better play a shielding role. The surface electrode can have other shapes. The surface electrode can be used to fit with the common conductive layer.

[0439] Fig.12 In the example of FIG. 1 , the charge sensing electrodes on the lower surface of the piezoelectric material film or the dielectric elastomer film are arranged in rows and columns to form a charge sensing electrode array, so that each charge sensing electrode is located at a specific position, and the position where the force acts on the piezoelectric material film is identified by the specific position. Each charge sensing electrode of the charge sensing electrode array corresponds to an electrode of the electrode array of the top metal layer one by one. After the piezoelectric material film or the dielectric elastomer film is attached to the semiconductor wafer, the charge sensing electrode and the corresponding electrode of the top metal layer are spatially opposite. There is a gap between each charge sensing electrode of the charge sensing electrode array.

[0440] Fig.13A , Fig. 13B and Fig. 13C Shows the basis Fig.11 A three-dimensional schematic diagram of an embodiment of the present application.

[0441] In order to clearly distinguish Fig.11 The tactile sensor chip of the embodiment has an adhesive film with a conductive double-sided tape, in Fig.13A The adhesive film is shown in the Fig. 13B The conductive double-sided tape is shown alone and the adhesive film is hidden. Fig. 13C Both adhesive film and conductive double-sided tape are shown in FIG.

[0442] See also Fig.13AAs an example, the adhesive film is in a grid shape. The adhesive film includes a plurality of holes. The positions of the holes correspond to the charge sensing electrodes of the piezoelectric material film and the electrodes of the top metal layer, so that the charge sensing electrodes and the corresponding electrodes of the top metal layer can be electrically connected through the holes. The position of the adhesive film corresponds to the electrode array of the top metal layer (i.e., the position of the first type of metal area).

[0443] See also Fig. 13B For example, the conductive double-sided adhesive tape is in the shape of a rectangular frame. The conductive double-sided adhesive tape bonds the edge area of ​​the top metal layer (i.e., the location of the second type of metal area) with the edge area of ​​the common ground conductive layer, thereby forming an electrical connection between the common ground conductive layer and the second type of metal area.

[0444] See also Fig. 13C As an example, the adhesive layer is located in the rectangular frame of the conductive double-sided tape, and there is a gap between the two to avoid interference with each other. The second type of area of ​​the top metal layer is electrically connected to the common conductive layer through the conductive double-sided tape, and the common conductive layer is electrically connected to the surface electrode on the upper surface of the piezoelectric material film. The packaging shell is buckled on the common conductive layer, and the piezoelectric material film is pressed by the common conductive layer, and then the adhesive layer, the conductive double-sided tape and the semiconductor chip are pressed.

[0445] Fig.14 Shows the basis Fig.11 A cross-sectional view of the tactile sensing chip of an embodiment of the present application.

[0446] Fig.14 In the figure, a common conductive layer, a piezoelectric material film, an adhesive layer / conductive double-sided tape, a semiconductor chip and a packaging substrate are stacked from top to bottom. The adhesive layer and the conductive double-sided tape are roughly in the same position in the up and down directions, and are both attached to the surface of the semiconductor chip. The conductive adhesive is located at the edge of the top metal layer of the semiconductor chip, and is used to bond the second type of metal area to the common conductive layer. The adhesive layer is located on the inner side of the conductive double-sided tape, and is used to bond the piezoelectric material film. As an example, the area of ​​the piezoelectric material film is smaller than the common conductive layer, so that after the common conductive layer covers the piezoelectric material film, the edge portion of the common conductive layer is exposed relative to the piezoelectric material film and can be bonded to the conductive double-sided tape.

[0447] Fig.14 It is also shown that the charge sensing electrodes on the lower surface of the piezoelectric material film or the dielectric elastomer film are substantially at the same position in the left-right direction as the corresponding electrodes on the top metal layer, and the corresponding holes in the adhesive layer are also at this position.

[0448] The package shell is outside the edge of the common ground conductive layer and buckles the common ground conductive layer from top to bottom. The chip pins are arranged on the package substrate. The package shell also fixes the chip pins to the package substrate.

[0449] Fig.15 Shows the basis Fig.11 The packaging process flow of the tactile sensor chip of the embodiment of the present application.

[0450] To obtain a tactile sensor chip, a packaging substrate, a semiconductor wafer, a piezoelectric material film or a dielectric elastomer film, an adhesive film, a conductive double-sided adhesive tape, and a common conductive layer are prepared, and the semiconductor wafer is fixed to the packaging substrate.

[0451] Next, the conductive double-sided adhesive is bonded to the second type of metal region of the semiconductor wafer, and the adhesive film is bonded to the first type of metal region of the semiconductor wafer. It is understood that the order of bonding the adhesive film and the conductive double-sided adhesive can be interchanged.

[0452] Next, the piezoelectric material film is bonded to the top metal layer of the semiconductor wafer via an adhesive film.

[0453] Next, the common ground conductive layer is covered on the piezoelectric material film or the dielectric elastomer film, and the common ground conductive layer is bonded to the second type metal region by a conductive double-sided adhesive.

[0454] Next, a packaging shell is formed, for example, by injection molding, and the packaging shell fixes the common conductive layer, the piezoelectric material film and the semiconductor wafer, and is welded together with the packaging substrate.

[0455] According to another embodiment of the present application, a tactile sensor chip includes a tactile sensing structure and a piezoelectric material film, wherein the piezoelectric material film is located between the tactile sensing structure and a top metal layer of a semiconductor wafer.

[0456] See also Figure 1B and Figure 7 In the tactile sensor chip shown, there is no direct electrical contact between the tactile sensing structure and the top metal layer. Therefore, the tactile sensing structure and the electrode of the top metal layer form a capacitor. The isolation layer or air between the tactile sensing structure and the top metal layer serves as the dielectric of the capacitor. In an embodiment of the tactile sensor chip including both the tactile sensing structure and the piezoelectric material film, the piezoelectric material film also serves as the dielectric of the capacitor, thereby increasing the capacitance of the capacitor and helping to improve the sensitivity of the capacitance measurement.

[0457] The surface electrode on the upper surface of the piezoelectric material film or the dielectric elastomer film and the tactile sensing structure are connected to the semiconductor wafer respectively without directly forming an electrical connection. Optionally, the surface electrode on the upper surface of the piezoelectric material film and the tactile sensing structure are electrically connected. Still optionally, no surface electrode is provided on the upper surface of the piezoelectric material.

[0458] The charge sensing electrodes on the lower surface of the piezoelectric material film or the dielectric elastomer film correspond one to one with the electrodes of the electrode array of the top metal layer. Optionally, the charge sensing electrodes on the lower surface of the piezoelectric material film contact and form an electrical connection with the electrodes of the electrode array of the top metal layer. The charge sensing electrodes on the lower surface of the piezoelectric material film are not electrically connected to the surface electrodes (if any) on the upper surface of the piezoelectric material film or the dielectric elastomer film.

[0459] In one example, there is no surface electrode on the upper surface of the piezoelectric material film or the dielectric elastomer film, the tactile sensing structure serves as one of the plates of the capacitor, and the charge sensing electrode on the lower surface of the piezoelectric material film or the dielectric elastomer film and the corresponding electrode of the electrode array of the top metal layer form the other plate of the capacitor. The portion of the piezoelectric material film excluding the charge sensing electrode serves as the dielectric of the capacitor. The presence, position, force and / or direction of touch are identified by detecting the change in the capacitance of the capacitor.

[0460] In one example, the surface electrode on the upper surface of the piezoelectric material film or the dielectric elastomer film and the tactile sensing structure together serve as one of the plates of the capacitor, while the charge sensing electrode on the lower surface of the piezoelectric material film or the dielectric elastomer film and the corresponding electrode of the electrode array of the top metal layer form the other plate of the capacitor.

[0461] In another example, the surface electrode on the upper surface of the piezoelectric material film or the dielectric elastomer film is floating, the tactile sensing structure serves as one of the plates of the capacitor, and the charge sensing electrode on the lower surface of the piezoelectric material film or the dielectric elastomer film and the corresponding electrode of the electrode array of the top metal layer form the other plate of the capacitor.

[0462] In another example, there is a gap between the charge sensing electrode on the lower surface of the piezoelectric material film or the dielectric elastomer film and the corresponding electrode of the electrode array of the top metal layer, the tactile sensing structure serves as one of the plates of the upper capacitor, the charge sensing electrode on the lower surface of the piezoelectric material film or the dielectric elastomer film serves as the other plate of the upper capacitor and also as one of the plates of the lower capacitor, and the corresponding electrode of the electrode array of the top metal layer serves as the other plate of the lower capacitor, and the upper capacitor and the lower capacitor are connected in series. Touch is recognized by detecting the change in the overall capacitance of the upper capacitor and the lower capacitor connected in series.

[0463] In another example, pressure is sensed by charge sensing electrodes of a piezoelectric material film or a dielectric elastomer film, and a tactile sensing structure may not be used (but the tactile sensing structure exists in the chip). For example, pressure is sensed by measuring the amount of charge on the corresponding charge sensing electrode through the electrodes of the electrode array of the top metal layer through a circuit for measuring voltage in a semiconductor chip. In this case, the tactile sensing structure may be grounded.

[0464] In another example, pressure is sensed by measuring the charge amount of the charge sensing electrode of the piezoelectric material film or the dielectric elastomer film, and touch is sensed by the capacitance value of the capacitor formed by the tactile sensing structure. For example, the electrode of the electrode array of the top metal layer is first connected to an analog-to-digital converter (ADC) to measure the charge amount appearing on the charge sensing electrode, and then the electrode of the electrode array is connected to a capacitance-to-digital converter (CDC) to measure the capacitance value of the capacitor formed by the electrode of the electrode array and the tactile sensing structure.

[0465] In the above-mentioned embodiment of the tactile sensor chip including both a tactile sensing structure and a piezoelectric material film, the advantages of a capacitance-based tactile sensor (for example, being more conducive to identifying the direction of touch) can be obtained through the tactile sensing structure, and the advantages of a piezoelectric-based tactile sensor (for example, being able to more quickly identify the presence of pressure) can be obtained through the piezoelectric material film, and there is no need to add more leads in the tactile sensor chip to connect the semiconductor chip and external components (including the tactile sensing structure and the piezoelectric material film), thereby reducing manufacturing costs and complexity.

[0466] Fig.16A A circuit schematic diagram of a tactile sensor chip according to an embodiment of the present application is shown.

[0467] Fig.16A In an embodiment of the present invention, the tactile sensor chip includes a piezoelectric material film or a dielectric elastomer film, but does not include a tactile sensing structure.

[0468] The touch sensor chip includes a circuit for measuring analog quantities formed in a semiconductor wafer ( Fig.16A In the figure, an ADC (analog-to-digital converter) and a CDC (capacitance-to-digital converter) are shown), a switch array, and an optional semiconductor amplifier.

[0469] The charge sensing electrode on the lower surface of the piezoelectric material film or the dielectric elastomer film is coupled with the electrode of the electrode array of the top metal layer, thereby coupling the charge sensing electrode to the switch array, and then the switch array connects it to, for example, an ADC. Due to the presence of the sticky film and the process error of semiconductor manufacturing, the charge sensing electrode may be electrically connected to the electrode of the corresponding electrode array, or there may be a gap. In either case, the charge accumulated on the charge sensing electrode under the action of the force affects the electrode of the electrode array, such as forming a current or changing the potential. Thus, the occurrence of pressure is sensed by measuring the corresponding electrical signal through the ADC. Optionally, the electrical signal on the electrode of the electrode array is also amplified by a semiconductor amplifier to facilitate its perception. The semiconductor amplifier can be implemented by a single MOS, and its spatial position is below each electrode of the electrode array inside the semiconductor wafer, and is manufactured by a semiconductor process without significantly increasing the manufacturing cost of the semiconductor wafer. Thus, there can be multiple semiconductor amplifiers, and they correspond one-to-one to the electrodes of the electrode array.

[0470] The switch array selectively connects the ADC and the CDC, so that the ADC and the CDC can be connected to the same electrode of the electrode array in a time-sharing manner. Alternatively, the ADC and the CDC can also be connected to different electrodes of the electrode array at the same time.

[0471] exist Fig.16A In the embodiment, the surface electrode on the upper surface of the piezoelectric material film or the dielectric elastomer film (and optionally, the common conductive layer connected thereto) serves as one of the plates of the capacitor, and the electrode of the top metal layer (and optionally, the charge sensing electrode connected thereto) serves as the other plate of the capacitor. The electrodes of the electrode array are connected to the CDC through a switch array (and optionally an amplifier), so that the CDC can measure the capacitance formed by the electrodes as the plates.

[0472] Fig. 16B A circuit schematic diagram of a tactile sensor chip according to another embodiment of the present application is shown.

[0473] exist Fig. 16B In an embodiment of the present invention, the tactile sensor chip includes a tactile sensing structure, a piezoelectric material film or a dielectric elastomer film, and a semiconductor chip stacked from top to bottom. The upper surface of the piezoelectric material film or the dielectric elastomer film may optionally not be provided with a surface electrode. The tactile sensing micro-nano structure of the tactile sensing structure, the charge sensing electrode on the lower surface of the piezoelectric material film or the dielectric elastomer film, and the electrodes of the electrode array of the top metal layer correspond to each other one by one and are arranged in the up and down direction, and their projections in this direction substantially overlap. Optionally, the area of ​​each of the tactile sensing micro-nano structure and the charge sensing electrode may be larger than the electrodes in the electrode array.

[0474] The tactile sensing structure is grounded, for example, through a switch array. Each electrode of the electrode array is connected to the switch array through an optional semiconductor amplifier, and the switch array is connected to the ADC, CDC, and ground. Thus, the amount of charge accumulated on the charge sensing electrode is measured by the ADC, and the capacitance formed by the electrodes of the electrode array and the tactile sensing micro-nano structure can also be measured by the ADC. The capacitance formed by the electrodes of the electrode array and the tactile sensing micro-nano structure can be measured by the ADC.

[0475] Fig.17A and Fig. 17B A touch sensor assembly according to another embodiment of the present application is shown.

[0476] Chips are usually soldered to PCBs (printed circuit boards) for use in electronic products. However, the thickness of the stacked PCB and chip is difficult to reduce, which limits its application scenarios. For example, the space that can accommodate electronic devices in the fingers of a bionic robot is limited, or when used as the skin of a bionic robot, the thickness of the skin is also limited.

[0477] exist Fig.17A and Fig. 17B In the embodiment, the packaging substrate of the tactile sensor chip is cancelled, so that the thickness of the tactile sensor chip is defined by the lead frame, the semiconductor chip, the tactile sensing structure / piezoelectric material film and the packaging shell, and can be further reduced. The pins on the lead frame are connected to one end of the FPC (flexible printed circuit board). An electrical connector is set at the other end of the FPC. Therefore, at the position of the tactile sensor, since there is no packaging substrate and printed circuit board, the thickness can be very thin. Such a tactile sensor can be set at a position such as the fingertips, or in a bionic skin structure. The thickness of the FPC is also very thin, even less than the thickness of the tactile sensor chip. Thus, it can extend along the bionic skin structure. For the sake of connection reliability and the number of plug-in and unplug times, the electrical connector requires a certain mechanical strength and size. The electrical connector is set at a position away from the tactile sensor chip and has a large space sufficient to accommodate a large-sized electrical connector, such as close to components such as a power supply and a processor core.

[0478] Fig.17A and Fig. 17BIn an embodiment of the present invention, the lead frame width of the tactile sensor chip is greater than that of the FPC. In an optional embodiment, the lead frame can be further removed. Accordingly, the semiconductor wafer is directly arranged on the FPC. The tactile sensing structure and / or the piezoelectric material film are fixed on the semiconductor wafer. Optionally, the packaging shell is also removed, and as an alternative, glue is applied around the tactile sensing structure to fix the tactile sensing structure and the semiconductor wafer to the FPC. If a piezoelectric material film is used, it is located between the tactile sensing structure and the semiconductor wafer, so that the tactile sensing structure fixed by the glue presses the piezoelectric material film on the semiconductor wafer. The piezoelectric material film and the common conductive layer and the semiconductor wafer can also be fixed using an adhesive film and a conductive double-sided tape. Still optionally, a pad is set on the third type metal area of ​​the top metal layer, and the pad on the metal area is connected to the pad on the FPC by a gold wire, and the gold wire is also fixed with glue. In order to connect the third type metal area with the gold wire, the shape of the tactile sensing structure / piezoelectric material film is set to avoid covering or blocking the third type metal area, thereby reserving space for connecting the gold wire.

[0479] Fig.18A , 18B 18C shows a tactile sensor chip according to another embodiment of the present application.

[0480] According to the above disclosed embodiments of the present application, by using the electrodes formed on the top metal of the semiconductor wafer as the capacitor plates, the accuracy of the capacitance-based tactile sensor is significantly improved, and the position accuracy of 1 mm is easily achieved. 2 Even higher density tactile sensors. However, when applied to applications such as bionic robots, tactile sensors need to be implemented on a larger area (for example, simulating the skin of a human hand). This can be achieved by manufacturing semiconductor wafers with larger areas. However, the cost of semiconductor wafers is positively correlated with their area. As the area increases, the cost increases significantly and the yield decreases. In order to Figures 18A-18C In an embodiment, the tactile sensing area is increased by packaging multiple semiconductor chips in a sensor chip, and the cost is avoided from rising sharply. Each semiconductor chip can have a small size and a standardized size to be suitable for large-scale production.

[0481] See also Fig.18A, the tactile sensor chip provided encapsulates 4 semiconductor chips. A single tactile sensing structure covers the top metal layer of the 4 semiconductor chips. For each semiconductor chip, each electrode of the electrode array formed by the metal area on the top metal layer has a tactile sensing micro-nano structure corresponding to it on the tactile sensing structure. Therefore, compared with the previous embodiment, the area of ​​the tactile sensor chip provided can be increased or changed without changing the semiconductor chip, and the number of capacitors provided per unit area for sensing touch remains substantially unchanged. The 4 semiconductor chips are carried by the same packaging substrate. The space formed by the packaging substrate and the packaging shell accommodates the 4 semiconductor chips and the tactile sensing structure. The packaging shell includes an opening, the packaging shell and the tactile sensing structure are pressed and fixed, and the upper surface of the tactile sensing structure is exposed through the opening of the packaging shell. The pins of the chip are connected to one or more of the 4 semiconductor chips.

[0482] As an example, four semiconductor chips of the tactile sensor chip are placed side by side, and their respective main planes are parallel and coplanar. The edges of some semiconductor chips are adjacent to other semiconductor chips. It is understood that other numbers of semiconductor chips can be packaged in the tactile sensor chip. Various spatial arrangements of these semiconductor chips are applicable to the embodiments of the present application. For example, these semiconductor chips are arranged in an array pattern, a ring shape, a linear shape, etc. These semiconductor chips can also be arranged in a 3D space.

[0483] Optionally, each of these semiconductor chips works independently, for example, independently measuring capacitance through electrodes of its top metal without relying on other semiconductor chips. Still optionally, these semiconductor chips work simultaneously or in parallel, so that multiple capacitances can be detected simultaneously to identify multi-point touch or proximity.

[0484] Still optionally, there is an electrical connection between these semiconductor chips, and analog signals and / or digital signals can be transmitted. For example, the semiconductor chip also includes an analog signal port, which is used to connect to the analog signal port of other semiconductor chips, so as to transmit analog signals across multiple semiconductor chips. Thus, the electrodes formed by the top metal of each of the multiple semiconductor chips can be combined to form capacitors with various shapes / sizes to increase the ability to sense touch or proximity. And the CDC / ADC in a semiconductor chip can measure capacitance, voltage or other analog signals through multiple electrodes formed by the top metal of each of the multiple semiconductor chips.

[0485] Still optionally, the analog signal port is used to transmit the analog signal of the tactile sensor chip to which it belongs to outside the tactile sensor chip to which it belongs, for example, two or more tactile sensor chips according to the embodiment of the present application are interconnected through the analog signal port, so as to transmit the analog signal across the chips between the multiple tactile sensor chips. Thus, the electrodes formed by the top metal of the semiconductor wafer of each of the multiple tactile sensor chips can be combined to form a capacitor with various shapes / sizes to increase the ability to sense touch or proximity.

[0486] Still optionally, the tactile sensing structure includes multiple (for example, 4) non-overlapping parts, each corresponding to one of the semiconductor chips, and the projection of each part covers the corresponding semiconductor chip. There may or may not be an electrical connection between the parts of the tactile sensing structure, or it may be dynamically set by the semiconductor chip whether there is an electrical connection. When there is an electrical connection between the parts of the tactile sensing structure, the whole has the same potential and can be used as one of the capacitor plates. When there is no electrical connection between the parts of the tactile sensing structure, the parts may have different potentials, and may be used as capacitor substrates and form capacitors respectively. Thus, the semiconductor chip can measure or sense the external environment or its changes based on the capacitance formed between the parts of the tactile sensing structure.

[0487] See also Fig.18B , the tactile sensor chip includes multiple tactile sensing structures. As an example, Fig.18B 1 and 2 are shown in FIG. 1 . Tactile sensing structure 1 covers semiconductor wafer 0 and semiconductor wafer 1, while tactile sensing structure 2 covers semiconductor wafer 2 and semiconductor wafer 3. Thus, each electrode of the electrode array formed by the metal region on the top metal layer of each semiconductor wafer 0 / 1 corresponds to one of the tactile sensing micro-nano structures of tactile sensing structure 1. And each electrode of the electrode array formed by the metal region on the top metal layer of each semiconductor wafer 2 / 3 corresponds to one of the tactile sensing micro-nano structures of tactile sensing structure 2. It can be understood that the tactile sensor chip may include other numbers of tactile sensing structures.

[0488] Optionally, the plurality of tactile sensing structures are electrically isolated from each other, and each tactile sensing structure is connected to a different metal region of the top metal of the semiconductor wafer, or connected to a different semiconductor wafer, so that the circuit of the semiconductor wafer can control the potential of each tactile sensing structure for capacitance measurement.

[0489] See also Fig.18C, the tactile sensor chip also includes an interposer. The interposer is used to provide electrical connection between multiple semiconductor chips. For example, the semiconductor chip is arranged on the interposer, and the semiconductor chip is electrically connected to the interposer through, for example, bumps, and complex wiring can be formed in the interposer, thereby supporting multi-signal, high-speed interconnection between multiple semiconductor chips. Optionally, there is no need to use an interposer, and electrical connection is provided between semiconductor chips through, for example, wire bonding. The pins of the tactile sensor chip can be connected to the interposer or the semiconductor chip.

[0490] When the tactile sensor chip is applied to different parts of the bionic robot such as fingers, joints, limbs, etc., it is also necessary to provide a tactile sensor system device having the shape of the installed part to form a bionic body. For example, the finger pads are generally curved surfaces. It is hoped that the surface of the finger pads has good tactile perception. However, semiconductor chips are limited to their manufacturing process and are usually planar structures. It is necessary to fill materials between the tactile sensor chip and the surface of the bionic body to obtain the bionic body. Silicone is a common material for forming a bionic body because of its flexibility and stability. However, the flexibility of silicone is accompanied by the loss of conductivity, and it is difficult to obtain a conductive silicone material with both good conductivity and good flexibility. The lack of conductivity causes the silicone covering the surface of the sensor chip to form an electrical barrier layer, which affects the tactile perception effect of the tactile sensor chip on the surface of the bionic body. The silicone material with good conductivity is harder, so that the force is applied to the tactile perception structure as a whole, and the tactile perception ability of different positions and directions is lost. For this reason, according to another embodiment of the present application, a tactile perception device for a bionic body is provided.

[0491] Fig.19A A tactile perception device for a bionic body according to an embodiment of the present application is demonstrated.

[0492] Compared with the previous embodiment, Fig.19A The illustrated embodiments have a profile corresponding to the shape of a bionic body and are thus suitable for forming a bionic body. Fig.19A The upper surface of the tactile bionic device is an arc-shaped curved surface, so it is suitable for the fingertips of a bionic robot. Fig.19AThe tactile bionic device can be used as a component and assembled on the finger of a bionic robot, so that the upper surface of the tactile bionic device serves as the finger pad and can directly contact the external environment to provide tactile sensation. For another example, the bionic robot already has a finger structure, and an inner cavity is provided at the finger pad position to accommodate the tactile sensing device. The surface of the tactile sensing device has a shape consistent with the inner cavity of the finger pad, so that the tactile sensing device forms a conformal contact with the inner cavity of the finger pad. The tactile sensing device does not directly contact the external environment, but the finger pad contacts the external environment. The finger pad is flexible and deforms when it contacts the external environment, causing deformation of the tactile sensing device. Therefore, the force of the external environment on the finger pad is transmitted to the tactile sensing device.

[0493] Fig.19A In the embodiment, the tactile sensing device includes a flexible packaging structure, a tactile sensing structure, a semiconductor chip and an inner plug-in board from the outside to the inside.

[0494] The flexible wrapping structure covers the surface of the tactile sensing structure, is flexible, and is formed of, for example, a silicone material. The flexible wrapping structure is used to form the contour of the tactile sensing structure and protect the internal tactile sensing structure to prevent, for example, water vapor, dust, etc. from invading the tactile sensing structure. Fig.19A In the example, the flexible wrapping structure is a thin layer of a curved structure.

[0495] The outer surface of the flexible wrapping structure forms the surface of the tactile sensing structure, so that the flexible wrapping structure can be used to form the surface of the bionic body, or conform to the inner cavity of the bionic body.

[0496] For the tactile sensing device, the flexible wrapping structure is not necessary. When there is no flexible wrapping structure, the tactile sensing structure can directly contact the inner cavity of the bionic body. When the bionic body provides sufficient protection for the tactile sensing device (such as waterproof and dustproof), not using a flexible wrapping structure can obtain a more sensitive tactile sensing effect and a lower manufacturing cost.

[0497] Optionally, the flexible wrapping structure is also used to form an electrical shield, to form an electrical connection for each part of the force transfer structure, and / or to form an electrical insulation layer. For example, the flexible wrapping structure is not uniform, but includes multiple layers with different properties. As an example, the flexible wrapping structure has a surface layer and an internal structure, the surface layer is insulating, and the internal structure is conductive, so that the internal structure provides electrical shielding and forms an electrical connection for each part of the force transfer structure. The internal structure can be further formed into a plurality of parts depending on the position, each part is conductive inside, and each part is insulated from each other. The potential of the internal structure can be controlled, for example, connected to the ground, or disconnected from the ground. The potential of the internal structure is controlled by the circuit in the semiconductor chip by forming an electrical connection between the internal structure and the semiconductor chip.

[0498] The tactile sensing structure includes a force transmission structure and a tactile sensing micro-nano structure array. The tactile sensing micro-nano structure array is, for example, the tactile sensing micro-nano structure array provided in the previous embodiment. Figure 3A and Figure 3B The tactile sensing micro-nano structure array includes a plurality of tactile sensing micro-nano structures (1901-1909). Each tactile sensing micro-nano structure deforms when subjected to a force, thereby changing the capacitance formed by the tactile sensing micro-nano structure and the top metal of the semiconductor chip.

[0499] The force transfer structure transfers the force generated by the touch to be sensed to the tactile sensing micro-nanostructure array. Fig.19A In the figure, multiple rod-shaped units (1911, 1915, 1918) connected to respective tactile sensing micro-nano structures are shown, one end of these rod-shaped units is spherical for contacting the flexible wrapping structure, and the other end corresponds to one of the tactile sensing micro-nano structures. The force transmission structure is a combination of these rod-shaped units, rather than a single or a few rod-shaped units.

[0500] The force transmitted by the force transmission structure makes the touch to be sensed correspond to the corresponding tactile sensing micro-nanostructure in the tactile sensing micro-nanostructure array. For example, when the touch acts on point A, the force transmission structure mainly transmits the force generated by the touch to the tactile sensing micro-nanostructure 1903, and less to other tactile sensing micro-nanostructures. Therefore, based on the different deformations of the multiple tactile sensing micro-nanostructures (1901-1909), it is possible to identify that the touch occurs at the position corresponding to the tactile sensing micro-nanostructure 1903, rather than the position corresponding to other tactile sensing micro-nanostructures. In addition to identifying the position of the touch, the force transmitted by the force transmission mechanism can also carry information such as the size and direction of the touch. For example, when the touch covers the area between point A and point B, the rod-shaped units (1912, 1913 and 1914) of the force transmission structure transmit the force generated by the touch to the tactile sensing micro-nanostructures 1902, 1903 and 1904, while the forces transmitted by other rod-shaped units (such as 1911, 1915, 1918) are relatively small. Thus, the touch is sensed to occur in the area between point A and point B based on the change in electrical signals caused by the deformation of the tactile sensing micro-nano structures 1902, 1903, and 1904. For another example, the touch occurs at point C, and the direction is vertically downward, so that the rod-shaped unit 1916 generates a force to the lower left on the tactile sensing micro-nano structure 1906, and the rod-shaped unit 1917 generates a force to the lower right on the tactile sensing micro-nano structure 1907. Then the four capacitors of the tactile sensing micro-nano structures 1906 and 1907 (see Figure 3B) changes, and identifies the direction of the force received by the tactile sensing micro-nanostructures 1906 and 1907, thereby identifying that the touch occurs at point C and the direction is downward. If the touch direction of point C is not vertically downward, but is biased to the lower left or lower right, the magnitude of the force received by the tactile sensing micro-nanostructures 1906 and 1907 will be different, thereby identifying the direction of the touch. The deformation size of the tactile sensing micro-nanostructure represents the magnitude of the force transmitted by the force transmission structure, which reflects the magnitude of the touch.

[0501] Thus, the touch that occurs on the flexible wrapping structure or the force transmission structure has properties such as position, area, contact surface shape, force magnitude, and force direction. The force transmission structure transmits the force generated by the touch to the tactile sensing micro-nano structure array. These properties affect the result of the force transmission. Specifically, it affects one or more tactile sensing micro-nano structures in the tactile sensing micro-nano structure array. Instead of transmitting the force generated by the touch to all tactile sensing micro-nano structures indiscriminately, the properties of the touch can be identified based on the recognition of the deformation of each tactile sensing micro-nano structure in the tactile sensing micro-nano structure array. The force transmission structure reacts the different properties of the touch as forces of different sizes and directions on different tactile sensing micro-nano structures in the tactile sensing micro-nano structure array, so that the properties of the touch can be identified.

[0502] Continue to view Fig.19A As an example, the force transfer structure includes a plurality of rod-shaped units (1911-1919) (also referred to as force transfer units). The plurality of rod-shaped units (1911-1919) correspond one-to-one to the tactile sensing micro-nanostructures (1901-1909) so as to transfer the force generated by touch to different tactile sensing micro-nanostructures. One end of the rod-shaped unit can be abutted, fixedly connected or integrally formed with the corresponding tactile sensing micro-nanostructure to effectively transfer the force. The rod-shaped unit is made of, for example, metal, such as stainless steel, and does not undergo significant deformation when transmitting force. One end of the rod-shaped unit contacts the center of the upwardly raised curved structure of the tactile sensing micro-nanostructure. There is no direct force between different rod-shaped units to avoid interference with adjacent rods when transmitting force.

[0503] Alternatively, the rod-shaped unit may have other shapes, and the rod-shaped units of the force transfer structure may have different shapes. For example, the rod-shaped units (1916-1918) each include three branches connected to the same point. The three branches contact the flexible wrapping structure at three different positions to increase the contact area between the rod-shaped unit and the flexible wrapping structure, and the three branches have different extension directions, thereby facilitating the identification of the direction of the force generated by the touch. It is understood that the rod-shaped unit may have different numbers of branches.

[0504] In addition to the force transmission structure, there may be gaps between the flexible wrapping structure and the tactile sensing micro-nanostructure array. These gaps may be filled with gas. These gaps may also be filled with the flexible wrapping structure, in which case the flexible structure is no longer a curved structure or a membrane structure. Filling the gaps between the rod-shaped units with a flexible wrapping structure helps to provide support for the rod-shaped units, preventing them from being damaged by excessive force at the connection position with the tactile sensing micro-nanostructure, and also helps to apply the force generated by touch to the force transmission structure in all directions.

[0505] When there is a flexible wrapping structure, the force transmission structure does not need to be formed in a shape corresponding to the bionic body, but can adopt a simple shape such as a rectangle to simplify the force transmission structure, and the flexible wrapping structure fills the space between the contour corresponding to the bionic body and the force transmission structure. When there is no flexible wrapping structure, it is advantageous to set the force transmission structure to have a shape corresponding to the bionic body, which helps to transfer the force generated by the touch to the force transmission structure when the bionic body is touched.

[0506] Fig.19A In the embodiment, the end of the rod-shaped unit in contact with the flexible wrapping structure is spherical. Optionally, the end of the rod-shaped unit in contact with the flexible wrapping structure is disc-shaped, umbrella-shaped, curved or flat. Various shapes are suitable for the rod-shaped unit to receive the force generated by touch.

[0507] Fig.19A Two semiconductor chips are shown, which are spaced apart. Tactile sensing micro-nano structures 1901-1904 correspond to one chip, and tactile sensing micro-nano structures 1905-1909 correspond to another chip. Thus, the semiconductor chip does not need to have a large area, but a plurality of chips together form the required sensing area. Each chip is connected to an interposer. The interposer is used to provide electrical connection between the chips. Optionally, the tactile sensing device includes a single chip.

[0508] A circuit for sensing electrical signals is formed in the semiconductor wafer. The top metal of the semiconductor wafer forms an electrode and forms a variable capacitor with the tactile sensing micro-nano structure. The principle of the circuit for sensing electrical signals in the semiconductor wafer measuring the capacitance of the tactile sensing micro-nano structure and sensing touch is the same as in the previous embodiment.

[0509] Fig.19B Shown Fig.19A A three-dimensional diagram of a tactile sensing device.

[0510] Fig.19BIn the figure, the flexible wrapping structure has a rectangular curved profile. The force transfer structure is located between the flexible including structure and the tactile sensing micro-nano structure array. The force transfer structure includes a plurality of rod-shaped units, each of which corresponds to one of the tactile sensing micro-nano structures on the tactile sensing micro-nano structure array. Thus, the plurality of rod-shaped units are also arranged in an array. The extension direction of each rod-shaped unit is perpendicular to the main plane of the tactile sensing micro-nano structure array. Since the tactile sensing micro-nano structure array is a planar structure and the flexible wrapping structure has a curved profile, the distances from different parts of the flexible wrapping structure to the main plane of the tactile sensing micro-nano structure array are different, and the length of the rod-shaped unit corresponds to the distance from a certain part of the flexible wrapping structure to the main plane of the tactile sensing micro-nano structure array, and thus the lengths of the various rod-shaped units do not have to be the same. The force transfer structure also has a curved profile.

[0511] The tactile sensing device leads out an electrical signal through, for example, a flexible printed circuit (FPC) to transmit the result or intermediate quantity of tactile sensing.

[0512] Fig. 20A A tactile sensing device for a bionic body according to yet another embodiment of the present application is shown.

[0513] exist Fig. 20A In the tactile sensing device, the force transmission structure includes a plurality of rod-shaped units (2001-2009), and the tactile sensing micro-nanostructure array includes tactile sensing micro-nanostructures (1901-1909). The plurality of rod-shaped units (2001-2009) correspond to the plurality of tactile sensing micro-nanostructures (1901-1909) one by one. Fig.19A Compared with the force transmission structure, Fig. 20A In the embodiment, the force transmission structure further includes a horizontal rod, which connects the plurality of rod-shaped units (2002-2008). The plurality of rod-shaped units (2002-2008) are respectively fixedly connected to the horizontal rod. Thus, when one or more of the plurality of rod-shaped units (2002-2008) undergo lateral displacement due to force, the lateral force corresponding to the lateral displacement is transmitted to each of the plurality of rod-shaped units (2002-2008) through the horizontal rod, thereby driving the tactile sensing micro-nano structure (1902-1908) to produce corresponding deformation. Thus, by setting the horizontal rod, Fig.19A Compared with the embodiment, the force transfer structure is more sensitive to the force component in the horizontal direction.

[0514] Fig. 20A A horizontal rod is shown. It is understood that there may be multiple horizontal rods, for example, horizontal rods are respectively arranged at different heights relative to the wafer surface in the vertical direction. For another example, different horizontal rods connect different rod-shaped units. For example, a horizontal rod is arranged between rod-shaped units 2002 and 2003, and another horizontal rod is arranged between rod-shaped units 2007 and 2008. For another example, the extension direction of the horizontal rod is perpendicular to Fig. 20A The direction of the paper, or Fig. 20A Horizontal rods are set in the horizontal direction and the direction perpendicular to the paper surface.

[0515] Fig. 20B Shown Fig. 20A A three-dimensional diagram of a tactile sensing device.

[0516] Fig. 20B In the embodiment, the force transmission structure includes a plurality of rod-shaped units, and the plurality of rod-shaped units are also arranged in an array. The extension direction of each rod-shaped unit is perpendicular to the main plane of the tactile sensing micro-nanostructure array. The force transmission structure also includes a plurality of horizontal rods. The horizontal rods connect each row and each column of the rod-shaped unit array. The horizontal rods connecting the rows of the rod-shaped units and the horizontal rods connecting the columns of the rod-shaped units are perpendicular to each other. Thus, the force transmission structure can effectively transmit forces in different directions on the horizontal plane to the tactile sensing microstructure array.

[0517] Some horizontal rods have different heights. The height is the distance to the main plane in the direction perpendicular to the main plane of the tactile sensing micro-nanostructure array. Since the profile of the force transmission structure has a rectangular curved surface, the length of the horizontal rod with a higher height is smaller than the length of the horizontal rod with a lower height. Some horizontal rods connecting the rows of rod-shaped units have the same height as some horizontal rods connecting the columns of rod-shaped units. These horizontal rods form a network, and the intersection of the horizontal rods is located at the rod-shaped unit connected thereto. The intersection between the horizontal rods is rigid, which facilitates one horizontal rod to drive another horizontal rod to move to transmit the effect of force. The intersection between the rod-shaped unit and the horizontal rod is also rigid. The intersection between the rod-shaped unit and the tactile sensing micro-nanostructure array is also rigid.

[0518] Optionally, the tactile sensing micro-nano structure and the force transmission structure are integrally formed. Optionally, the tactile sensing micro-nano structure and the force transmission structure are connected by welding, bonding, etc.

[0519] Optionally, the horizontal rod extends between some (but not all) of the rod-shaped units in the row or column. For example, the rod-shaped units corresponding to the tactile sensing micro-nano structures at the edge of the tactile sensing micro-nano structure array are not connected to the horizontal rod, because the space at the location may be small in the height direction and it is inconvenient to set the horizontal rod.

[0520] Fig. 20C A three-dimensional diagram of a tactile sensing device according to another embodiment is shown.

[0521] same Fig. 20B compared to, Fig. 20CIn the embodiment of the present invention, the horizontal rods extend in a direction not in the direction of the rows and columns of the tactile sensing micro-nanostructure array, but at a certain angle (45 degrees) to the direction of the rows or columns of the tactile sensing micro-nanostructure array. Other angle values ​​between 0 and 90 degrees are also feasible. Some horizontal rods are perpendicular to other horizontal rods in a plane parallel to the main plane of the tactile sensing micro-nanostructure.

[0522] Still optionally, the horizontal rods have more directions in the horizontal direction, for example, 4 directions. Among them, the extension direction of some horizontal rods is the same as the direction of the row or column of the tactile sensing micro-nano structure array, while the extension direction of other horizontal rods has a certain angle (such as 45 degrees) with the direction of the row or column of the tactile sensing micro-nano structure array. The angles between the horizontal rods are 45 degrees or 90 degrees.

[0523] exist Fig. 20C In the embodiment of the invention, the one-to-one force transmission relationship between the rod-shaped unit and the tactile sensing micro-nanostructure is weakened. Since the grid formed by multiple horizontal rods connects the rod-shaped unit with the adjacent rod-shaped unit, when the rod-shaped unit applies force to the corresponding tactile sensing micro-nanostructure, the adjacent tactile sensing micro-nanostructure or even all tactile sensing micro-nanostructures are subjected to force (but the magnitude and direction of the force are different). Even if a point or a small area of ​​the tactile sensing device is touched by touch, multiple or all tactile sensing micro-nanostructures can participate in the perception of touch. At this time, the composition of the force transmission structure can be described as including an end for receiving the action of the force generated by touch (called the A end), an end for applying the action of force to the tactile sensing micro-nanostructure array (called the B end), and a connection structure connecting the A end and the B end. There are multiple A ends, each with a different position, and multiple A ends form the outline of the tactile sensing device. There are also multiple B ends, each connected to one of the tactile sensing micro-nanostructures. The connection structure is connected to multiple A ends and also to multiple B ends, so as to transfer the force received by the A end to the B end. The connecting structure includes vertical rods and horizontal rods. The horizontal rods extend in a horizontal direction parallel to the main plane of the tactile sensing micro-nano structure array, while the vertical rods extend in a direction perpendicular to the main plane of the tactile sensing micro-nano structure array. The horizontal rods form a single-layer grid or a multi-layer grid in the horizontal direction. Some of the vertical rods and the horizontal rods form a multi-layer grid in a plane perpendicular to the main plane of the tactile sensing micro-nano structure array.

[0524] Optionally, the horizontal rods form multiple clusters, and the horizontal rods in each cluster are connected to multiple vertical rods. However, the horizontal rods in one cluster are not connected to the vertical rods connected to the horizontal rods in other clusters. Therefore, the force transmission structure limits the force transmitted in the horizontal direction to the cluster, and during tactile perception, the capacitance formed by the tactile perception micro-nanostructures corresponding to other clusters does not need to be detected. Therefore, there may be other horizontal rods in the extension direction of a horizontal rod, and these horizontal rods are not directly connected to each other, or are discontinuous with each other.

[0525] Still optionally, the vertical rod also includes multiple sections. Some vertical rods are used to connect the A end to the connecting structure. Some vertical rods are used to connect the vertical structure with the B end. And some vertical rods are used to connect horizontal rods of different heights of the structure. There may be other vertical rods in the extension direction of a vertical rod, and these vertical rods are not directly connected to each other, or are interrupted from each other.

[0526] Optionally, the connection structure directly connects the touch sensing micro-nanostructure array without connecting through a vertical rod, that is, the B end is located at the vertex of the connection structure. Similarly, the A end can also be located at the vertex of the connection structure without connecting the A end and the connection structure through a vertical rod.

[0527] Optionally, the connection structure may have a profile corresponding to the desired shape of the bionic body. For example, the connection structure includes multiple layers of grids with different heights, and the number, area or shape of each layer of grids in the horizontal direction may be different. Thus, by stacking the grids, the connection structure has a specified profile, such as a flat plate, a curved surface, a step, a pyramid, etc.

[0528] Still optionally, the connecting structure has an oblique rod. The direction in which the oblique rod extends is different from the horizontal rod and the vertical rod. The direction in which the oblique rod extends is located in a plane perpendicular to the main plane of the tactile sensing micro-nanostructure array and is not parallel to the main plane of the tactile sensing micro-nanostructure array. The oblique rod connects, for example, adjacent horizontal rods and also connects adjacent vertical rods. The oblique rod is conducive to transmitting a force that has components in both the horizontal direction and the numerical direction.

[0529] Still optionally, the connection structure has a truss structure.

[0530] Fig.21A A tactile sensing device for a bionic body according to yet another embodiment of the present application is shown.

[0531] Fig.21A Tactile sensing device and Fig. 20A The tactile sensing device has a similar structure, the difference being that Fig.21A In the figure, the height of the horizontal bar is Fig. 20A The horizontal bars have different heights. Fig.21A In the embodiment, the height of the horizontal rod is lower, for example, it is close to the center of the upwardly raised curved structure of the tactile sensing micro-nanostructure. Thus, the horizontal rod directly applies force to the tactile sensing micro-nanostructure in the horizontal direction. Optionally, the horizontal rod is fixed to the tactile sensing micro-nanostructure adjacent to it, so that there is no need to use the rod-shaped unit to transmit the horizontal force between the horizontal rod and the tactile sensing micro-nanostructure. Optionally, the rod-shaped unit, the tactile sensing micro-nanostructure and the horizontal rod are fixed at the same point or different points.

[0532] Fig.21B Shown Fig.21A A three-dimensional diagram of a tactile sensing device.

[0533] Fig.21B There are multiple horizontal rods extending in the same horizontal plane, close to the center of the upwardly raised curved structure of the tactile sensing micro-nanostructure. These horizontal rods have two extending directions, each having a certain angle (such as 45 degrees) with the row or column direction of the tactile sensing micro-nanostructure array.

[0534] Fig.22A A tactile sensing device for a bionic body according to yet another embodiment of the present application is shown.

[0535] Fig.22A Tactile sensing device and Fig.21A The tactile sensing device has a similar structure, the difference being that Fig.22A In the embodiment, the multiple horizontal rods have different lengths and heights. This structure is advantageous for forming a contour of any shape other than a rectangular parallelepiped, and is also helpful for filling the space between the contour and the tactile sensing micro-nanostructure array. For example, Fig.22A In the embodiment, the tactile sensing device has a raised arc-shaped structure similar to the fingertips. The height of the middle area of ​​the fingertips is greater than that of the peripheral area of ​​the fingertips. Therefore, in the middle area of ​​the force transmission structure, multiple layers of horizontal rods with different heights are arranged, while in the peripheral area, single layers of horizontal rods are arranged. This ensures that at any position where the force transmission structure receives the touch force, the distance from the force application point to the horizontal rod will not be too large, which is beneficial to the transmission of the force. The multiple layers of horizontal rods can be located in the same row, that is, their projections onto the main plane of the tactile sensing micro-nanostructure array overlap.

[0536] Fig. 22B and Fig. 22C Shown Fig.22A A three-dimensional diagram of a tactile sensing device.

[0537] Fig. 22B In the invention, there are multiple horizontal bars extending in the same direction. However, the heights of some horizontal bars are different from those of other horizontal bars. There are various heights of the horizontal bars. There are also various lengths of the horizontal bars. The horizontal bars located in the edge area are the longest. The horizontal bars located in the center area are relatively short.

[0538] The horizontal rods extend in the column direction of the tactile sensing micro-nano structure array, and there are no horizontal rods extending in the row direction of the tactile sensing micro-nano structure array. The longest horizontal rod spans all the tactile sensing micro-nano structures in a column of the tactile sensing micro-nano structure array and is fixedly connected to all the vertical rods along the way, while the shorter horizontal rod spans part (but not all) of the tactile sensing micro-nano structures in a column of the tactile sensing micro-nano structure array and is fixedly connected to all the vertical rods along the way.

[0539] By using horizontal rods with the same extension direction, the complexity of the force transmission structure is reduced, which is beneficial to the manufacture of the force transmission structure. In addition, the influence of the forces in two mutually perpendicular directions (the extension direction of the horizontal rod and the direction perpendicular to the extension direction of the horizontal rod) in the horizontal plane is significantly distinguished, which is beneficial to distinguish the forces in the two directions during identification.

[0540] Fig. 22C and Fig. 22B Similar, the difference is the direction in which the horizontal rod extends.

[0541] Fig.23A A tactile sensing device for a bionic body according to yet another embodiment of the present application is shown.

[0542] exist Fig.23A In the embodiment, the significant difference from the previous embodiment is that the main planes of the two semiconductor chips of the tactile sensing device do not overlap. And by setting the positions of the two chips, the two chips form a certain contour, which is close to the shape of the bionic body used for the tactile sensing device. Since the chip itself is a planar structure, the contour formed by the two chips is usually difficult to be exactly similar to the shape of the bionic body. The force transmission structure and optionally the flexible wrapping structure are covered on the contour formed by the chip to obtain a contour closer to the shape of the bionic body. For example, the force transmission structure or the flexible wrapping structure can be in conformal contact with the inner cavity of the bionic body that accommodates the tactile sensing device.

[0543] Fig.23A In the figure, the tactile sensing device includes a substrate 2340 for carrying two chips. The substrate 2340 includes two parts (divided by dotted lines in FIG. 23). The cross-section of one part is rectangular, while the cross-section of the other part is triangular. The two parts are combined to form a shape close to, for example, the tip of a finger. Each of the two parts has an upper surface (plane), each of which is used to carry a chip. Thus, the main plane of the chip placed on the rectangular part of the substrate is parallel to the horizontal plane, while the main plane of the chip placed on the triangular part of the substrate is at an angle to the horizontal plane. A tactile sensing micro-nano structure array (2350 and 2352) is provided on the surface of each of the two chips. The main plane of the tactile sensing micro-nano structure array (2350 and 2352) is parallel to the corresponding chip, so that the main plane of the tactile sensing micro-nano structure array (2350 and 2352) also has an angle. A force transmission structure (2360 and 2362) is provided on each of the two tactile sensing micro-nano structure arrays (2350 and 2352). The two transfer structures (2360 and 2362) are adjacent and do not overlap. Fig.23A The tactile sensing device includes two force transmission structures. It is understood that the force transmission structure may include other numbers of wafers and other numbers of force transmission structures. The number of force transmission structures and the number of wafers need not be the same.

[0544] Fig.23A In the embodiment, both force transmission structures (2360 and 2362) have close Fig.19A The force transmission structure of the embodiment of the present invention has the characteristics of the force transmission structure. The two force transmission structures (2360 and 2362) each include a plurality of force transmission units. Each force transmission unit is in the shape of a rod, one end of which is spherical, and the other end is in contact with or integrally formed with the tactile sensing micro-nano structure. The force transmission unit of the force transmission structure is perpendicular to the main plane of the tactile sensing micro-nano structure array corresponding to it, so the directions of the rods of the force transmission units of the two force transmission structures are different.

[0545] The two force transfer structures (2360 and 2362) together form the outline of the fingertip.

[0546] The flexible wrap 2370 covers the two force transfer structures (2360 and 2362) and forms the contour of the fingertips.

[0547] Fig. 23B Shown Fig.23A A three-dimensional diagram of a tactile sensing device.

[0548] Optionally, the two force transfer structures (2360 and 2362) do not contact each other, so they can be manufactured separately, and there is no electrical connection. The two force transfer structures (2360 and 2362) can be connected respectively by leads, and their potential can be set by the chip. Optionally, some metal areas of the top metal layer of the chip are also electrically connected to the force transfer structure, so that the chip can control the force transfer structure to be connected to the desired potential. Analog signals and / or digital signals can be transmitted between the two chips. For example, a chip includes, for example, CDC, which is respectively connected to the two force transfer structures (2360 and 2362), and the two force transfer structures (2360 and 2362) are used as two plates of the measured capacitor and form mutual capacitance, thereby measuring the capacitance of the measured capacitor by CDC. Optionally, CDC is connected to one or both of the two force transfer structures (2360 and 2362), using it as one plate of the measured capacitor, and the other plate is, for example, ground, thereby measuring the capacitance of the self-capacitance of the measured capacitor by CDC. It is necessary to understand that the force transfer structure is electrically connected to the corresponding tactile sensing micro-nanostructure array and together they act as the plates of a capacitor.

[0549] Still optionally, the tactile sensing micro-nano structure and the metal area of ​​the top metal layer of the chip are respectively used as two plates of the measured capacitor and connected to the CDC, so that the CDC senses touch by measuring the capacitance change formed by multiple metal areas of the top metal layer of the chip when the tactile sensing micro-nano structure is deformed by the pressure generated by touch. The CDC in a chip can be connected to the top metal layer of another chip and / or the tactile sensing micro-nano structure corresponding to the other chip through a channel for transmitting analog signals between chips, and measure its capacitance. In addition to measuring capacitance, the chip may include an ADC to measure analog quantities.

[0550] Optionally, the interior of any one of the force transfer structures (2360 and 2362) includes multiple parts (each part has a corresponding tactile sensing micro-nano structure, or each has a number of force transfer units), there is no electrical connection between the parts, and they are respectively connected to the CDC in the semiconductor chip. Thus, even if only one force transfer structure is used, the CDC can measure mutual capacitance / self-capacitance using different parts of the force transfer structure. In other words, the tactile sensing structure includes multiple parts divided by regions, each of which includes a part of the force transfer structure and a part of the tactile sensing micro-nano structure array.

[0551] Further, the flexible wrapping structure has a surface layer and an internal structure, the surface layer is insulating, and the internal structure is conductive. The internal structure can be further formed into multiple parts according to different positions, each part is conductive inside, and each part is insulated from each other. Thus, a part of the internal structure forms an electrical connection with a corresponding part of the force transmission structure, and it is also ensured that there is no electrical connection between different parts of the force transmission structure.

[0552] Still optionally, there is a dielectric film between the tactile sensing micro-nano structure array of the tactile sensing device and the top metal layer of the semiconductor chip. The lower surface of the dielectric film (the surface facing the top metal layer of the semiconductor chip) includes a plurality of charge sensing electrodes formed by piezoelectric material or dielectric elastomer (DE). When subjected to pressure, charges appear on the charge sensing electrodes, and the pressure is sensed by measuring the amount of induced charges. The dielectric film can also serve as a dielectric between the top metal of the semiconductor chip and the plates of the capacitor formed by the tactile sensing micro-nano structure. The working principle of the tactile sensing device with a dielectric film can be found in the description based on Figure 11-16B Embodiment of the invention.

[0553] Optionally, the upper surface of the dielectric film (facing the tactile sensing micro-nanostructure array) includes a surface electrode. The surface electrode is used to provide, for example, a ground plane and to play a shielding role.

[0554] Optionally, the tactile sensing device further comprises an adhesive film for bonding the lower surface of the dielectric film to the top metal layer of the semiconductor wafer. The adhesive film comprises a plurality of holes, and the plurality of holes of the adhesive film correspond one-to-one to the metal areas of the top metal layer of the semiconductor wafer forming the capacitor plates. The function and working principle of the adhesive film can be referred to the previous embodiment.

[0555] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A tactile sensing device for a bionic body, comprising a semiconductor chip, a tactile sensing structure and a flexible wrapping structure; The tactile sensing structure includes a force transmission structure and a tactile sensing micro-nano structure array, and the tactile sensing micro-nano structure array includes a plurality of tactile sensing micro-nano structures; The top metal layer of the semiconductor wafer forms a plurality of metal regions, a plurality of first metal regions of the plurality of metal regions serve as an electrode array, and the electrode array includes a plurality of electrodes; Each electrode of the plurality of electrodes corresponds to one of the plurality of tactile sensing micro-nano structures; or Every N electrodes of the plurality of electrodes form a group, and each electrode group corresponds to one of the plurality of tactile sensing micro-nano structures, wherein N is a positive integer greater than or equal to 2; The flexible wrapping structure covers the tactile sensing device and is used to receive the force generated by the touch to be sensed and transmit the force generated by the touch to be sensed to the force transmission structure; The flexible wrapping structure has a contour, and the contour enables the tactile sensing device to have the shape of a bionic body or a part of a bionic body; Under the action of the force generated by the touch to be sensed transmitted by the force transmission structure, one or more tactile sensing micro-nano structures among the plurality of tactile sensing micro-nano structures are deformed so that the spatial shape between the deformed tactile sensing micro-nano structure and the electrode or electrode group corresponding thereto is changed; An electric switch array and a capacitance measuring circuit are formed in the MOS layer and multiple intermediate layers of the semiconductor wafer; The plurality of electrodes and the tactile sensing structure form a plurality of first capacitors, wherein each of the plurality of electrodes serves as one of the plates of the first capacitor, and the tactile sensing structure is used to form another plate of the first capacitor; The capacitance measuring circuit is used to measure the capacitance values ​​of the plurality of first capacitors; The plurality of electrodes are coupled to the switch array; The switch array is connected to the circuit for measuring capacitance.

2. The tactile sensing device according to claim 1, wherein: The flexible wrapping structure can form conformal contact with the inner surface of the cavity of the bionic body accommodating the tactile sensing device.

3. The tactile perception device according to claim 1 or 2, wherein: The flexible wrapping structure has the shape of a bionic body or a part of a bionic body.

4. The tactile sensing device according to any one of claims 1 to 3, wherein: The flexible wrapping structure is non-conductive.

5. The tactile sensing device according to any one of claims 1 to 4, wherein: The force transmission structure has a first contour, and the first contour makes the shape enclosed by the outer surface of the flexible wrapping structure have the shape of a bionic body or a part of a bionic body.

6. The tactile sensing device according to claim 5, wherein: The outer surface of the flexible wrapping structure is in the shape of a finger or a knuckle.

7. The tactile sensing device according to any one of claims 1 to 6, wherein: The flexible wrapping structure comprises a surface layer and an internal structure; The surface layer covers the internal structure; The internal structure is in contact with the force transfer structure; The surface layer is non-conductive; The internal structure is electrically conductive.

8. The tactile sensing device according to claim 7, wherein The internal structure of the flexible wrapping structure is in conformal contact with the tactile sensing structure.

9. The tactile perception device according to claim 7 or 8, wherein: The tactile sensing structure and the internal structure of the flexible wrapping structure are used together to form the other electrode plate of the first capacitor.

10. The tactile sensing device according to any one of claims 7 to 9, wherein There is an electrical connection between the internal structure of the flexible wrapping structure and the tactile sensing structure; The surface layer is adapted to receive a touch to be sensed; The internal structure is used to apply the force generated by the touch to be sensed to the force transfer structure.

11. The tactile sensing device according to any one of claims 1 to 10, wherein: A piezoelectric material film or a dielectric elastomer film is included between the top metal layer of the semiconductor wafer and the tactile sensing structure, and the piezoelectric material film or the dielectric elastomer film serves as a dielectric between the plates of the plurality of first capacitors.

12. The tactile sensing device according to claim 11, wherein: The piezoelectric material film or dielectric elastomer film comprises a first surface and a second surface; The first surface of the piezoelectric material film or the dielectric elastomer film faces the tactile sensing structure; The second surface of the piezoelectric material film or the dielectric elastomer film faces the top metal layer; The second surface of the piezoelectric material film or the dielectric elastomer film includes a plurality of charge induction electrodes, and each of the plurality of electrodes of the electrode array corresponds to one of the plurality of charge induction electrodes.

13. The tactile sensing device according to claim 12, wherein: There is a gap between the charge induction electrode of the piezoelectric material film or the dielectric elastomer film and the corresponding electrode of the electrode array.

14. The tactile perception device according to claim 12 or 13, wherein: When the touch to be sensed exerts a force on the piezoelectric material film or dielectric elastomer film, the piezoelectric material film or dielectric elastomer film is deformed so that at the location where the force acts, the charge induction electrode of the piezoelectric material film or dielectric elastomer film contacts and electrically connects with the corresponding electrode.

15. The tactile sensing device according to any one of claims 12 to 14, wherein: If there is a gap between the charge induction electrode of the piezoelectric material film or the dielectric elastomer film and the electrode of the corresponding electrode array, the capacitance formed between the first surface of the piezoelectric material film or the dielectric elastomer film and the charge induction electrode and the capacitance formed between the charge induction electrode and the electrodes of the multiple electrodes are connected in series to form a first capacitance.

16. The tactile sensing device according to any one of claims 12 to 15, wherein: If the charge induction electrode of the piezoelectric material film or the dielectric elastomer film contacts the electrode of the electrode array corresponding thereto, the charge induction electrode of the piezoelectric material film or the dielectric elastomer film serves as one of the plates of the first capacitor.

17. The tactile sensing device according to any one of claims 12 to 16, wherein: The first surface of the piezoelectric material film or the dielectric elastomer film comprises a surface electrode, The surface electrode includes one or more regions isolated from each other.

18. The tactile sensing device according to any one of claims 1 to 17, wherein: A circuit for measuring voltage is also formed in the MOS layer and multiple intermediate layers of the semiconductor wafer; The switch array is further configured to connect the plurality of first metal regions to the circuit for measuring voltage.

19. The tactile sensing device according to any one of claims 1 to 18, further comprising a second semiconductor wafer; The top metal layer of the second semiconductor wafer forms a plurality of metal regions, a plurality of first metal regions of the plurality of metal regions of the second semiconductor wafer serve as an electrode array, and the electrode array of the second semiconductor wafer includes a second plurality of electrodes; Each electrode of the second plurality of electrodes corresponds to one of the plurality of tactile sensing micro-nano structures; or every N electrodes of the second plurality of electrodes form a group, and each electrode group corresponds to one of the plurality of tactile sensing micro-nano structures; The second plurality of electrodes and the tactile sensing structure form a plurality of first capacitors, wherein each electrode of the second plurality of electrodes serves as one of the plates of a first capacitor, and the tactile sensing structure is used to form another plate of the first capacitor.

20. The tactile sensing device according to claim 19, wherein: The main planes of the first semiconductor wafer and the second semiconductor wafer face different areas of the tactile sensing micro-nanostructure array respectively; Each of the plurality of tactile sensing micro-nano structures corresponds to at most one of the electrodes of the electrode arrays of the first semiconductor wafer and the second semiconductor wafer.

21. The tactile sensing device according to claim 20, wherein: The tactile sensing micro-nanostructure array has a second profile; The second profile has one or more planar regions; Main planes of the first semiconductor wafer and the second semiconductor wafer face the same or different plane regions of the second contour.

Images