Method for inspecting a mark pattern in mask data

Abstract

A method for checking mark patterns in mask data, comprising: providing mask data; obtaining scribe lane mask data from the mask data as to-be-processed data; performing data conversion on the to-be-processed data to obtain scribe lane layout data; obtaining mask levels and position information of all mark patterns in the scribe lane layout data and standard pattern graphics corresponding to each mark pattern according to original layout data; establishing a plurality of preset windows at corresponding positions of corresponding mask levels in the scribe lane layout data according to the mask levels and position information of all mark patterns in the original layout data and the standard pattern graphics corresponding to each mark pattern, one mark pattern corresponding to one preset window; obtaining mark patterns in each preset window in the scribe lane layout data; and obtaining a judgment result of whether the mark patterns in the preset window are correct according to the mark patterns in the preset window and the corresponding standard pattern graphics, thereby improving the correctness of mark pattern checking.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method for inspecting marked patterns in photomask data. Background Technology

[0002] Currently, integrated circuit (IC) manufacturers typically produce IC products based on layout files provided by design companies. These layout files are usually provided to the IC manufacturer by the design company in a specific file format (e.g., GDS). The IC manufacturer extracts relevant layout data from these files and sends it to the mask shop. The mask shop performs data merging and hierarchical processing on the layout data to create mask data (Job Deck), thereby forming the layout structure and manufacturing the mask.

[0003] As chip manufacturing processes become increasingly complex, the need for layered layouts is growing, and the requirements for these layers are becoming more stringent. The accuracy and integrity of the layout structure directly determine the product yield. Therefore, before manufacturing the photomask, Job Deck View (JDV) is required to ensure the accuracy and integrity of the layout structure.

[0004] However, current methods for detecting photomask data still need further improvement. Summary of the Invention

[0005] The technical problem solved by this invention is to provide a method for inspecting marked patterns in photomask data, so as to improve the accuracy of photomask data inspection.

[0006] To solve the above-mentioned technical problems, the present invention provides a method for inspecting marked patterns in photomask data, comprising: providing photomask data, wherein the photomask data includes data of several photomask layers, each photomask layer corresponding to several repeated exposure units in a photolithography process, each photomask layer including several chip areas and dicing areas, the dicing areas having several marked patterns, the photomask data including dicing area photomask data and chip photomask data, the dicing area photomask data being data of the dicing areas of the several photomask layers, the chip photomask data being data of the several chip areas of the several photomask layers, the photomask data being obtained after processing the original layout data; obtaining the dicing area photomask data from the photomask data as data to be processed; and performing data conversion on the data to be processed, the data conversion including format conversion, so that the data to be processed can be... The layout editing tool processes the data, ensuring its magnification, mirroring, and reference coordinate system are consistent with the original layout data, to obtain the cutting track layout data. Based on the original layout data, it obtains the mask layer and position information of all the marked graphics in the cutting track layout data, as well as the standard pattern graphics corresponding to each marked graphics. Based on the mask layer and position information of all the marked graphics in the original layout data, as well as the standard pattern graphics corresponding to each marked graphics, it establishes several preset windows at the corresponding positions of the mask layers in the cutting track layout data, with one preset window corresponding to one marked graphics. In the cutting track layout data, it obtains the marked graphics within each preset window. Based on the marked graphics within the preset windows and the corresponding standard pattern graphics, it obtains a judgment result on whether the marked graphics within the preset windows are correct.

[0007] Optionally, the method for determining whether the marked graphic in the preset window is complete based on the marked graphic and the corresponding standard pattern graphic includes: performing an "XOR" operation on the marked graphic and the corresponding standard pattern graphic; if the operation result has no graphic output, it indicates that the marked graphic is correct; if the operation result has a graphic, it indicates that the marked graphic is incorrect.

[0008] Optionally, the method for obtaining the photomask layer and position information of all the marked graphics in the cut path layout data, and the standard pattern graphic corresponding to each marked graphics, based on the original layout data, includes: providing a marked standard pattern library, the standard pattern library including several marked patterns, each marked pattern including one standard pattern graphic, and the standard pattern graphic in different marked patterns having different styles; providing a marked information file, the marked information file including the photomask layer and position information of all the marked graphics in the original layout data, and the standard pattern graphic corresponding to each marked graphics, the position information including coordinates and geometric transformation information relative to the standard pattern graphic; and obtaining the photomask layer and position information of all the marked graphics in the original layout data, and the standard pattern graphic corresponding to each marked graphics, based on the marked standard pattern library and the marked information file.

[0009] Optionally, the coordinates are the coordinates of the origin of the marker pattern corresponding to the marker pattern relative to the center of the exposure unit.

[0010] Optionally, the geometric transformation information includes one or both of rotation and mirroring.

[0011] Optionally, the marking layout further includes a prohibited area, and the standard pattern graphic is located within the prohibited area; the method of establishing a plurality of preset windows at the position of the photomask layer corresponding to the cutting path layout data further includes: determining the size of the preset window according to the range of the prohibited area around the standard pattern graphic corresponding to each marking graphic.

[0012] Optionally, the dicing area includes a central dicing area and a peripheral dicing area, the peripheral dicing area surrounding a plurality of the chip areas and the central dicing area, and the central dicing area located between adjacent chip areas; the marking information file further includes: the exposure range corresponding to each of the photomask layers, the width of the dicing area, and the step distance.

[0013] Optionally, the method for establishing a plurality of preset windows further includes: obtaining the position information of the outer cutting zone based on the exposure range, the width of the cutting zone, and the step distance; obtaining a plurality of first sub-windows located within the outer cutting zone from the plurality of preset windows based on the position information of the outer cutting zone; and obtaining a second sub-window in the outer cutting zone based on the step distance and each of the first sub-windows, wherein the second sub-windows and the first sub-windows are located on opposite sides of the exposure unit.

[0014] Optionally, the method further includes: acquiring a first sub-marker graphic within a first sub-window, and acquiring a second sub-marker graphic within a corresponding second sub-window; determining whether the area containing the marker graphic will be repeatedly exposed based on the first sub-marker graphic and the corresponding second sub-marker graphic.

[0015] Optionally, determining whether the area where the marker graphic exists will be repeatedly exposed based on the first sub-marker graphic and the corresponding second sub-marker graphic includes: performing an AND operation on the first sub-marker graphic and the corresponding second sub-marker graphic; if the operation result shows no graphic, it means that no area of ​​the marker graphic is repeatedly exposed; if the operation result shows a graphic, it means that the area where the marker graphic exists will be repeatedly exposed.

[0016] Optionally, the photomask data may include data from several production-grade electron beam exposure systems.

[0017] Optionally, the method for obtaining the cut-track photomask data from the photomask data includes: retaining a plurality of production-grade electron beam exposure system data corresponding to the cut-track photomask data from the photomask data, while deleting the remaining plurality of production-grade electron beam exposure system data.

[0018] Optionally, the photomask data further includes a text file, which includes the layer information of the photomask and the calling method of several production-grade electron beam exposure system data corresponding to each layer of the photomask; the method of obtaining the cutting track photomask data from the photomask data includes: retaining the calling content of several production-grade electron beam exposure system data corresponding to the cutting track photomask data from the text file, while deleting the remaining calling content.

[0019] Optionally, the cutting path layout data includes layer numbers for each level; before establishing the preset window, it further includes: establishing a correspondence between the layer numbers and the layer names based on the layer information in the text file.

[0020] Optionally, the format conversion includes converting the mask data to GDSII, OASIS, or GDS format.

[0021] Optionally, the data conversion further includes geometric transformation operations; the geometric transformation operations include one or more of the following: scaling operations, mirroring operations, and coordinate transformation operations.

[0022] Optionally, the magnification factor of the graphic size on the photomask compared to the graphic size on the original layout is m, and the magnification operation includes performing a magnification operation of 1 / m on the photomask data.

[0023] Optionally, the photomask data and the original layout data are drawn in different ways relative to the light-blocking surface of the photomask, and the mirroring operation includes performing Y-axis mirroring on the photomask data.

[0024] Optionally, the photomask data references a first coordinate system, and the original map data references a second coordinate system. The first coordinate system and the second coordinate system are different, and the coordinate transformation operation converts the coordinates in the data to be processed from the first coordinate system to the coordinates in the second coordinate system.

[0025] Optionally, the standard pattern includes a pattern that allows light to pass through and a pattern that blocks light.

[0026] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:

[0027] The method for inspecting marked graphics in photomask data provided by this invention involves converting the cut-track photomask data in the photomask data to obtain cut-track layout data that can be processed by a layout editing tool. Based on the photomask layer and position information of all marked graphics in the original layout data, and the standard pattern graphics corresponding to each marked graphics, several preset windows are established at the corresponding positions of the photomask layers in the cut-track layout data. By comparing the marked graphics in the preset windows with the corresponding standard pattern graphics, it is determined whether the marked graphics in the photomask data are correct. The above determination is based on a simple data conversion of the cut-track photomask data in the photomask data. The photomask data is the final data before board fabrication. The inspection method can be automated, which helps to save production costs and improve the accuracy of marked graphics inspection.

[0028] Furthermore, a first sub-marker graphic is obtained within a first sub-window located in the outer cutting channel area, and a second sub-marker graphic is obtained within a second sub-window on the opposite side of the first sub-window. Based on the first sub-marker graphic and the corresponding second sub-marker graphic, it is determined whether the area where the marker graphic exists will be repeatedly exposed. The above-mentioned marker graphic inspection method can accurately locate which specific marker graphic has the abnormality of repeated exposure, which helps to improve the accuracy of marker graphic inspection. Attached Figure Description

[0029] Figures 1 to 2 This is a flowchart of the steps of a method for inspecting marked patterns in photomask data according to an embodiment of the present invention;

[0030] Figures 3 to 15 This is a schematic diagram of the steps of a method for inspecting marked patterns in photomask data according to an embodiment of the present invention. Detailed Implementation

[0031] It should be noted that the terms "surface" and "on" in this specification are used to describe the relative spatial position and are not limited to whether there is direct contact.

[0032] As described in the background section, current methods for photomask data inspection still require further improvement. Specifically, the photomask data (Job Deck) used in integrated circuit manufacturing contains numerous process-required markings, such as alignment marks and overlay marks, placed along the dicing lines. The absence of these markings or errors in their patterns during wafer fabrication can lead to problems such as the inability to measure certain process parameters and misalignment of the wafer on the wafer rack, ultimately resulting in photomask scrapping or even wafer scrapping.

[0033] Currently, the industry practice is to manually visually inspect the markings in the photomask data during the JDV stage. Engineers manually judge the correctness of the markings and locate their positions to confirm whether the markings match the standard pattern. However, since each photomask layer contains a large number of markings scattered throughout the cutting path, manual inspection is time-consuming, labor-intensive, and prone to omissions, with a high risk of missing incorrect markings.

[0034] To address the aforementioned problems, this invention provides a method for inspecting marked graphics in photomask data. This method involves converting the cut-track photomask data within the photomask data to obtain cut-track layout data that can be processed by a layout editing tool. Based on the photomask layer and position information of all marked graphics in the original layout data, and the standard pattern graphics corresponding to each marked graphics, several preset windows are established at the corresponding positions of the photomask layers in the cut-track layout data. By comparing the marked graphics within the preset windows with the corresponding standard pattern graphics, the correctness of the marked graphics in the photomask data is determined. This determination is based on a simple data conversion of the cut-track photomask data within the photomask data. The photomask data is the final data before board fabrication. This inspection method can be automated, saving production costs and improving the accuracy of marked graphics inspection.

[0035] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0036] Figures 1 to 2 This is a flowchart of the steps of a method for inspecting marked patterns in photomask data according to an embodiment of the present invention.

[0037] Please refer to Figure 1 The method for inspecting the marked patterns in the photomask data includes the following steps:

[0038] Step S101: Provide photomask data, which includes data of several photomask layers. Each photomask layer corresponds to several repeated exposure units in the photolithography process. Each photomask layer includes several chip areas and dicing areas. The dicing areas have several marking patterns. The photomask data includes dicing photomask data and chip photomask data. The dicing photomask data is the data of the dicing areas of several photomask layers. The chip photomask data is the data of several chip areas of several photomask layers. The photomask data is obtained after processing the original layout data.

[0039] Step S102: Obtain the cutting path photomask data as data to be processed from the photomask data;

[0040] Step S103: Convert the data to be processed, including format conversion, so that the data to be processed can be processed by the layout editing tool and that its magnification, mirror image, reference coordinate system are consistent with the original layout data, and obtain the cutting path layout data;

[0041] Step S104: Based on the original layout data, obtain the photomask layer and position information of all the marked graphics in the cutting path layout data, as well as the standard pattern graphic corresponding to each marked graphic;

[0042] Step S105: Based on the photomask layer and position information of all the marked graphics in the original layout data, and the standard pattern graphics corresponding to each marked graphics, establish a number of preset windows at the corresponding positions of the photomask layers in the cutting path layout data, with one marked graphics corresponding to one preset window;

[0043] Step S106: Obtain the marker graphics within each preset window from the cutting path layout data;

[0044] Step S107: Based on the marked graphic in the preset window and the corresponding standard pattern graphic, obtain a judgment result on whether the marked graphic in the preset window is correct.

[0045] In this embodiment, step S104, which involves obtaining the mask layer and position information of all the marked graphics in the cutting path layout data based on the original layout data, as well as the standard pattern graphic corresponding to each marked graphic, can be found in [reference needed]. Figure 2 .

[0046] The following will be described in detail with reference to the accompanying drawings.

[0047] Figures 3 to 15 This is a schematic diagram of the steps of a method for inspecting marked patterns in photomask data according to an embodiment of the present invention.

[0048] Step S101 is executed, providing photomask data. The photomask data includes data of several photomask layers, each photomask layer corresponding to several repeated exposure units in the photolithography process. Each photomask layer includes several chip areas and dicing areas. The dicing areas have several marking patterns. The photomask data includes dicing photomask data and chip photomask data. The dicing photomask data is the data of the dicing areas of several photomask layers. The chip photomask data is the data of several chip areas of several photomask layers. The photomask data is obtained after processing the original layout data.

[0049] The photomask data is used to manufacture the photomask. In this embodiment, the photomask data (Job Deck) is the data returned by the photomask factory before the final board fabrication (photomask production). Specifically, after the original layout data of the product is sent to the photomask factory, the factory processes the data according to relevant technical documents and returns the photomask data for inspection by the customer and integrated circuit manufacturing plant. Once confirmed to be problem-free, the photomask factory uses the photomask data to manufacture the photomask. Subsequently, the method for checking the marked graphics in the photomask data aims to determine whether the marked graphics in the photomask data are accurate.

[0050] In this embodiment, the original layout data is provided by the design company to the integrated circuit manufacturing plant and is in GDSII (Graphic Data System II) format.

[0051] In other embodiments, the original map data can be obtained through other means, or it can be in OASIS (Open Artwork System Interchange Standard) format or GDS (Graphic Data System) format, etc.

[0052] Here, for illustrative purposes only, Figure 3 This is a schematic diagram of the photomask structure for a certain photomask layer. The photomask layer includes several chip areas a and dicing areas b. The dicing areas b have several marking patterns (not shown in the figure). The marking patterns include alignment marks used in the photolithography process, patterns for measuring width, and patterns for measuring overlay error, etc.

[0053] In this embodiment, the photomask data is referenced to the first coordinate system X1O1Y1.

[0054] In this embodiment, the cutting channel area b includes a central cutting channel area b1 and a peripheral cutting channel area b2. The peripheral cutting channel area b2 surrounds several chip areas a and the central cutting channel area b1. The central cutting channel area b1 is located between adjacent chip areas a.

[0055] In wafer fabrication, during exposure processes using photomasks, chip region a is used to form chip patterns on the wafer, dicing region b is used to form dicing patterns on the wafer, and peripheral dicing region b2 is used to form peripheral dicing patterns on the wafer. During exposure stepping, there may be areas of repeated exposure in the peripheral dicing region b2 between adjacent exposure units. The marking patterns within the peripheral dicing region b2 are at risk of repeated exposure. Therefore, correspondingly, in a single exposure unit of the photomask data, a marking pattern needs to be placed on one side (e.g., one side in the X1 direction) of the peripheral dicing region b2, while a light-blocking area is set on the opposite side (e.g., the other side in the X1 direction) of the peripheral dicing region b2 to avoid repeated exposure of the marking pattern.

[0056] In this embodiment, the method for checking the marked patterns in the photomask data is also used to: determine whether the marked patterns in the peripheral cutting area b2 have been repeatedly exposed.

[0057] In this embodiment, the photomask data includes several production-grade electron-beam exposure system (MEBES) data.

[0058] In this embodiment, the photomask data also includes a text file, which includes the layer information of the photomask and the calling method of several production-grade electron beam exposure system data corresponding to each layer of the photomask.

[0059] Here, for illustrative purposes only, Figure 4 and Figure 5 The contents of the text files are shown separately. Jobfile1 shows the MEBES data called by each photomask layer, and Jobfile2 shows the layer information of the photomask.

[0060] Specifically, different parts of the data in Job File1 are distinguished by different CHIPs. Among them, "CHIP FRAME (dashed line)" is the cut track photomask data, "CHIP MAIN_CHIP" is the chip photomask data, "CHIPOTHER" is other data, "n1, n2..." represent different photomask layers, and each photomask layer will call MEBES data separately. "Rows ? / ?" is content that is not related to this application and will not be shown here.

[0061] It should be noted here that... Figure 4 and Figure 5 This is for illustrative purposes only. MEBES data and calling methods can be used in other ways, and there are no restrictions here.

[0062] In other embodiments, the text file may not be included.

[0063] Execute step S102 to obtain the cutting path photomask data as data to be processed from the photomask data.

[0064] In this embodiment, the method for obtaining the cut-track photomask data from the photomask data includes: retaining the call content of several production-grade electron beam exposure system data corresponding to the cut-track photomask data from the text file, while deleting the remaining call content.

[0065] For details, please continue to refer to [the website / information]. Figure 4 The text file Job file1 retains the call content of several production-grade electron beam exposure system data corresponding to the cutting mask data, that is, it retains the content of "CHIP FRAME (dashed line area)" and deletes the rest of the call content to form a new text file Job file-i.

[0066] In another embodiment, the method for obtaining the cut-track photomask data from the photomask data includes: retaining a plurality of the production-grade electron beam exposure system data corresponding to the cut-track photomask data from the photomask data, while deleting the remaining plurality of the production-grade electron beam exposure system data.

[0067] Perform step S103, and refer to Figure 6 The data to be processed is converted, including format conversion, so that the data to be processed can be processed by the layout editing tool and its magnification, mirror image, reference coordinate system are consistent with the original layout data, and the cutting path layout data is obtained.

[0068] The reason for performing this format conversion is that the mask data cannot be directly processed by layout editing tools. Therefore, it is necessary to first use a mask data viewing and analysis tool to convert the mask data so that the obtained cut path layout data can be directly processed by layout editing tools.

[0069] The format conversion includes converting the mask data to GDSII, OASIS, or GDS format.

[0070] In this embodiment, the layout editing tool is Klayout, which can edit data in GDSII, OASIS, and GDS formats. In other embodiments, the layout editing tool may not be limited to this.

[0071] In this embodiment, the format conversion refers to converting the mask data to GDSII format, and the mask data viewing and analysis tool is Gold Mask View.

[0072] In other embodiments, the format conversion may be to convert the format of the photomask data to GDS or OASIS format, and the photomask data viewing and analysis tools may not be limited to these.

[0073] In this embodiment, the data conversion further includes geometric transformation operations.

[0074] The geometric transformation operation includes one or more of the following: magnification operation, mirroring operation, and translation operation. The reason for performing this geometric transformation operation is that, since the photomask data differs from the original layout in terms of magnification, mirroring, and reference coordinate system, the inverse geometric transformation operation is required during restoration to restore the graphic dimensions and coordinates within the photomask data to be consistent with the original layout data.

[0075] The magnification factor of the graphic size on the photomask compared to the graphic size on the original layout is m, and the magnification operation includes performing a 1 / m magnification operation on the photomask data.

[0076] The reason for the magnification operation is that the size of the pattern on the photomask is magnified by a certain factor (e.g., m=4, 5, 10, etc.) compared to the original pattern. That is, in the photolithography process, the pattern on the photomask is generally reduced by a certain factor before being projected onto the wafer surface. If the size of the pattern on the photomask is larger than the original pattern... Figure 1 If the above is true, then the aforementioned multiplier operation is unnecessary.

[0077] The photomask data and the original layout data are drawn in different ways relative to the light-blocking surface of the photomask, and the mirroring operation includes performing Y-axis mirroring on the photomask data.

[0078] The reason for the mirroring operation here is that if the photomask data and the original layout data are drawn in different ways relative to the light-blocking surface of the photomask—for example, if the photomask data is drawn with the light-blocking surface facing upwards, while the original layout data is drawn with the light-blocking surface facing downwards—then the photomask data needs to be mirrored. Conversely, if the photomask data and the original layout data are drawn in the same way relative to the light-blocking surface of the photomask, then the mirroring operation is not needed.

[0079] In this embodiment, the photomask data references a first coordinate system X1O1Y1, and the original layout data references a second coordinate system X2O2Y2. The first coordinate system X1O1Y1 and the second coordinate system X2O2Y2 are different. The coordinate transformation operation converts the coordinates in the data to be processed from the first coordinate system X1O1Y1 to the coordinates in the second coordinate system X2O2Y2.

[0080] The coordinate transformation operation includes one or both of translation and rotation.

[0081] In this embodiment, the first coordinate system X1O1Y1 and the second coordinate system X2O2Y2 are both Cartesian coordinate systems. The two coordinate systems have the same direction, but different origins. The coordinate transformation operation includes translation.

[0082] Specifically, the first coordinate system X1O1Y1 takes the lower left corner O1 of the exposure unit as its origin, while the second coordinate system X2O2Y2 takes the center O2 of the exposure unit as its origin. Thus, through the translation operation, the reference coordinate system of the data to be processed is made consistent with the reference coordinate system of the original layout data, that is, the subsequent obtained cutting path layout data and the original layout data use the same coordinate system, namely the second coordinate system X2O2Y2.

[0083] Here, for illustrative purposes only, Figure 6 The diagram illustrates the geometric transformation operation performed on an exposure unit within a photomask layer. Figure 6 In (a), the data to be processed (i.e., the cut-out mask data) is located in the first coordinate system X1O1Y1, with the lower left corner of the exposure unit as the origin of the O1 coordinate system. Figure 6 In Figure (b), the cut track layout data is obtained after the geometric transformation operation, with the center O2 of the exposure unit as the origin in the second coordinate system X2O2Y2. In the cut track photomask data, in the first coordinate system X1O1Y1, the size of the exposure unit along the X1 direction is A, and the size along the Y1 direction is B. After the geometric transformation operation, in the second coordinate system X2O2Y2, the size of the exposure unit along the X2 direction is a = A / m, and the size along the Y2 direction is b = B / m.

[0084] Execute step S104, based on the original layout data, obtain the photomask layer and position information of all the marked graphics in the cutting path layout data, as well as the standard pattern graphics corresponding to each marked graphic.

[0085] In this embodiment, the cutting path layout data includes layer numbers for each level, but not layer names. To map the layer numbers and layer names, please refer to [the relevant documentation] before creating the preset window. Figure 7 .

[0086] Please refer to Figure 7 Based on the hierarchical information in the text file, establish the correspondence between the hierarchical number and the hierarchical name.

[0087] Specifically, the text file Job file2 contains the mask's layer information, where Level represents the "layer number," from which the correspondence between MaskTitle and the layer number can be obtained. Since the layer name can be obtained from MaskTile, the relationship between the layer number and the layer name can be determined. Thus, it can be known which layer name corresponds to each layer number in the cut-out layout data.

[0088] In this embodiment, the method for obtaining the mask layer and position information of all the marked graphics in the cutting path layout data, as well as the standard pattern graphics corresponding to each marked graphic, based on the original layout data, please refer to [reference needed]. Figure 2 This includes the following steps:

[0089] Step S1041: Provide a standard template library of markings. The standard template library includes several marking templates, each marking template includes a standard template graphic, and the standard template graphic in different marking templates has a different style.

[0090] Step S1042: Provide a marking information file, which includes the photomask layer and position information of all the marking graphics in the original map data, and the standard pattern graphic corresponding to each marking graphic. The position information includes coordinates and geometric transformation information relative to the standard pattern graphic.

[0091] Step S1043: Based on the mark standard template library and the mark information file, obtain the mask layer and position information of all the mark graphics in the original map data, as well as the standard template graphics corresponding to each mark graphic.

[0092] Next, in conjunction with the appendix Figures 8 to 10 Please provide a detailed explanation.

[0093] Execute step S1041 to provide a standard template library of markers. The standard template library includes several marker templates, each of which includes a standard template graphic. The standard template graphic in different marker templates has a different style.

[0094] In this embodiment, the coordinate systems referenced in each of the marked diagrams take the center of the standard pattern graphic as the origin.

[0095] For illustrative purposes, Figure 8and Figure 9 Two marked maps are given, namely the first marked map and the second marked map. The first marked map uses the X1'O1Y1' coordinate system, and the second marked map uses the X1'O1Y1' coordinate system.

[0096] In other embodiments, the origin of the reference coordinate system in each of the marked diagrams may also be any position.

[0097] It should be noted that the standard pattern library of the markers needs to include the patterns of all the marker graphics in the original pattern data. The standard pattern graphics include the pattern of light transmission (the main graphic on the light mask is light-transmitting, Clear) and the pattern of light blocking (the main graphic on the light mask is light-blocking, Dark). That is, for standard pattern graphics with the same pattern, the Clear pattern and the Dark pattern are different patterns.

[0098] For illustrative purposes, Figure 8 The given first mark pattern has a first standard pattern graphic 201, which is a Clear pattern, and the main pattern on the corresponding photomask is transparent; Figure 9 The given second mark pattern has a second standard pattern graphic 202, which is a Dark pattern, and the main graphic on the corresponding photomask is shaded.

[0099] In this embodiment, the marking map further includes a prohibited area, within which the standard pattern graphic is located. The prohibited area is used to limit the range of the standard pattern graphic. The purpose of setting the prohibited area is to confine the standard pattern graphic within the prohibited area, or in other words, to prevent other graphics from appearing within the prohibited area.

[0100] Each of the aforementioned standard pattern graphics corresponds to one of the prohibited areas. Continuing with the example of the first standard pattern graphic 201 and the second standard pattern graphic 202, Figure 8 The first forbidden area 211 corresponding to the first standard pattern graphic 201 is shown in the figure. Figure 9 The second prohibited area 222 corresponding to the second standard pattern graphic 202 is shown in the figure.

[0101] Subsequently, based on the range of the prohibited area of ​​each standard pattern graphic, a preset window can be established at the corresponding position in the cutting path layout data. Continuing with the first standard pattern graphic 201 and the second standard pattern graphic 201 as examples, the range of the first prohibited area 211 can be represented by the coordinates of the two points at the lower left and upper right of each prohibited area, such as (X10', Y10'; X11', Y11'), and the range of the second prohibited area 222 can be represented by (X20', Y20'; X21', Y21').

[0102] Execute step S1042 to provide a marker information file. The marker information file includes the photomask layer and position information of all the marker graphics in the original map data, and the standard pattern graphic corresponding to each marker graphic. The position information includes coordinates and geometric transformation information relative to the standard pattern graphic.

[0103] In this embodiment, the coordinates are the coordinates of the origin of the marker pattern corresponding to the marker pattern relative to the center of the exposure unit.

[0104] In this embodiment, the geometric transformation information includes one or both of rotation and mirroring.

[0105] For illustrative purposes, Figure 10 The original map data provides three marker graphics: Mark-M-1, Mark-M-2, and Mark-M-3, within a single exposure unit of the mask layer M. Their corresponding standard template graphics are all the same: the first standard template graphic 201. The marker information file provides the coordinates (x1, y1) of Mark-M-1, (x2, y2) of Mark-M-2, and (x3, y3) of Mark-M-3, as well as their geometric transformations relative to the first standard template graphic 201. Here, the first marker graphics Mark-M-1 and Mark-M-2 are rotated 90 degrees counterclockwise relative to the first standard template graphic 201, while the third marker graphics Mark-M-3 differs from the first standard template graphic 201 only in the origin of its coordinates.

[0106] As can be seen from the above, when the marked pattern in the photomask data is correct, the same pattern as the marked pattern can be obtained in the corresponding photomask layer and position in the cut path layout data.

[0107] In this embodiment, the marking information file further includes: the exposure range corresponding to each of the photomask layers, the width of the cut zone, and the step distance. The marking information file is also used to provide the position of the marking pattern in the peripheral cut zone.

[0108] For illustrative purposes, Figure 10 The document also provides four adjacent exposure units (top, bottom, left, and right) to the aforementioned exposure unit (the red dashed lines only indicate the edges of the adjacent exposure units). Specifically, the width of the cutting channel area in the first direction X is d1, the width in the second direction Y is d2, the step distance in the first direction X is L1, and the step distance in the second direction Y is L2. From this, the position of the outer cutting channel area can be determined.

[0109] In this embodiment, the marker information file is extracted from the original map data. The marker information file can be any of data, files, and documents.

[0110] Next, step S1043 is executed, which involves obtaining the mask layer and position information of all the marked graphics in the original layout data, as well as the standard pattern graphics corresponding to each marked graphic, based on the marked standard pattern library and the marked information file.

[0111] At this point, based on the original layout data, the photomask layer and position information of all the marked graphics in the cutting path layout data, as well as the standard pattern graphics corresponding to each marked graphic, are obtained.

[0112] In step S105, based on the photomask layer and position information of all the marked graphics in the original layout data, and the standard pattern graphics corresponding to each marked graphics, several preset windows are established at the corresponding positions of the photomask layers in the cutting path layout data, with one marked graphics corresponding to one preset window.

[0113] In this embodiment, the method of establishing a plurality of preset windows at corresponding positions of the photomask layers in the cut-out layout data further includes: determining the size of the preset window based on the range of the prohibited area surrounding the standard pattern graphic corresponding to each of the marked graphics. Here, the size of the prohibited area determines the size of the preset window.

[0114] For illustrative purposes, Figure 11 Preset windows W1 corresponding to the first marker graphic Mark-M-1, W2 corresponding to the second marker graphic Mark-M-2, and W3 corresponding to the third marker graphic Mark-M-3 are given.

[0115] In this embodiment, the position information of the outer cutting zone is obtained based on the exposure range, the width of the cutting zone, and the step distance; based on the position information of the outer cutting zone, a plurality of first sub-windows located within the outer cutting zone are obtained from a plurality of preset windows; based on the step distance and each of the first sub-windows, a second sub-window is obtained in the outer cutting zone, wherein the second sub-window and the first sub-window are located on opposite sides of the exposure unit.

[0116] For details, please continue to refer to [the website / information]. Figure 10 and Figure 11 The second marker graphic Mark-M-2 and the third marker graphic Mark-M-3 are both located in the outer cutting channel area B2 (corresponding to...). Figure 3Within the outer cutting channel area b2), preset windows W2 and W3 are two first sub-windows, and the second sub-window WII corresponding to preset window W2 and the second sub-window WIII corresponding to preset window W3 can be obtained.

[0117] In step S106, the marked graphics in each preset window are obtained from the cutting path layout data.

[0118] In this embodiment, the first sub-marker graphic in the first sub-window is also obtained, and the second sub-marker graphic in the corresponding second sub-window is also obtained.

[0119] For illustrative purposes only; please refer to further details. Figure 11 When all the marked graphics in the photomask data are correct, the first marked graphic Mark-M-1 can be obtained in the preset window W1, the second marked graphic Mark-M-2 can be obtained in the preset window W2, and the third marked graphic Mark-M-3 can be obtained in the preset window W3. Otherwise, the corresponding marked graphic will not be obtained, or an incorrect marked graphic will be obtained.

[0120] Execute step S107, and obtain a judgment result on whether the mark graphic in the preset window is correct based on the mark graphic in the preset window and the corresponding standard pattern graphic.

[0121] Thus, by converting the cut-track mask data in the mask data, cut-track layout data that can be processed by the layout editing tool is obtained. Based on the mask layer and position information of all the marked graphics in the original layout data, and the standard pattern graphics corresponding to each marked graphics, several preset windows are established at the corresponding positions of the mask layers in the cut-track layout data. By comparing the marked graphics in the preset windows with the corresponding standard pattern graphics, it is determined whether the marked graphics in the mask data are correct. The above determination is based on a simple data conversion of the cut-track mask data in the mask data. The mask data is the final data before board fabrication. The inspection method can be automated, which helps to save production costs and improve the accuracy of the marked graphics inspection.

[0122] For details, please refer to [link / reference]. Figure 10 and Figure 11 The marking graphic within the preset window is compared with the corresponding standard pattern graphic to determine whether the marking graphic is correct. For example, the marking graphic within the preset window W1 is compared with the corresponding first standard pattern graphic 201. If they match, the marking graphic is determined to be correct; otherwise, the marking graphic is determined to be incorrect.

[0123] In this embodiment, the method for determining whether the marked graphic in the preset window is complete based on the marked graphic and the corresponding standard pattern graphic includes: performing an "XOR logic" operation on the marked graphic and the corresponding standard pattern graphic; if the operation result has no graphic output, it means the marked graphic is correct; if the operation result has a graphic, it means the marked graphic is incorrect.

[0124] To further illustrate, Figure 12 and Figure 13 A schematic diagram of the "XOR logic" operation is given. Figure 13 In this process, after performing an XOR operation between the marked graphic and the corresponding standard pattern graphic, the absence of a graphic output indicates that the marked graphic is correct; while Figure 13 In this process, after the marked graphic is subjected to an "XOR logic" operation with the corresponding standard pattern graphic, the result is output as a graphic indicating that the marked graphic is incorrect.

[0125] In this embodiment, it is also determined whether the area where the marker pattern exists will be repeatedly exposed based on the first sub-marker pattern and the corresponding second sub-marker pattern.

[0126] Here, the above-mentioned method for inspecting marker graphics can accurately pinpoint which specific marker graphic has an abnormality of repeated exposure, which helps to improve the accuracy of marker graphic inspection.

[0127] In this embodiment, determining whether the area where the marker graphic exists will be repeatedly exposed based on the first sub-marker graphic and the corresponding second sub-marker graphic includes: performing an AND operation on the first sub-marker graphic and the corresponding second sub-marker graphic; if the operation result shows no graphic, it means that no area of ​​the marker graphic is repeatedly exposed; if the operation result shows a graphic, it means that the area where the marker graphic exists will be repeatedly exposed.

[0128] To further illustrate, Figure 14 and Figure 15 A diagram illustrating the AND logic operation is provided. Figure 14 In the process, an AND operation is performed on the first sub-marker graphic and the corresponding second sub-marker graphic. If the result shows no graphic, it indicates that no area of ​​the marked graphic has been repeatedly exposed. Figure 15 In the process, an AND operation is performed on the first sub-marker graphic and the corresponding second sub-marker graphic. The result of the operation is illustrated in the graphic, indicating that the area where the marked graphic exists will be repeatedly exposed.

[0129] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for inspecting marked patterns in photomask data, characterized in that, include: Provide photomask data, which includes data of several photomask layers, each photomask layer corresponding to several repeated exposure units in the photolithography process, each photomask layer including several chip areas and dicing areas, each dicing area having several marked patterns, the photomask data including dicing photomask data and chip photomask data, the dicing photomask data being the data of the dicing areas of several photomask layers, the chip photomask data being the data of several chip areas of several photomask layers, the photomask data being obtained after processing the original layout data; The cut-track photomask data is obtained from the photomask data as data to be processed; The data to be processed is converted, including format conversion, so that the data to be processed can be processed by the layout editing tool and its magnification, mirror image, reference coordinate system are consistent with the original layout data, and the cutting path layout data is obtained. Based on the original layout data, obtain the mask layer and position information of all the marked graphics in the cutting path layout data, as well as the standard pattern graphic corresponding to each marked graphic; Based on the photomask layer and position information of all the marked graphics in the original layout data, and the standard pattern graphics corresponding to each marked graphics, several preset windows are established at the corresponding positions of the photomask layers in the cutting path layout data, with one marked graphics corresponding to one preset window; In the cutting path layout data, obtain the marked graphics within each of the preset windows; Based on the marked graphic in the preset window and the corresponding standard pattern graphic, obtain a judgment result on whether the marked graphic in the preset window is correct.

2. The method for inspecting marked patterns in photomask data as described in claim 1, characterized in that, The method for determining whether the marked graphic in the preset window is correct based on the marked graphic and the corresponding standard pattern graphic includes: performing an "XOR" operation on the marked graphic and the corresponding standard pattern graphic; if the operation result has no graphic output, it means the marked graphic is correct; if the operation result has a graphic, it means the marked graphic is incorrect.

3. The method for inspecting marked patterns in photomask data as described in claim 1, characterized in that, The method for obtaining the photomask layer and position information of all the marked graphics in the cut path layout data, and the standard pattern graphic corresponding to each marked graphics, based on the original layout data, includes: providing a marked standard pattern library, the standard pattern library including several marked patterns, each marked pattern including one standard pattern graphic, and the standard pattern graphic in different marked patterns having different styles; providing a marked information file, the marked information file including the photomask layer and position information of all the marked graphics in the original layout data, and the standard pattern graphic corresponding to each marked graphics, the position information including coordinates and geometric transformation information relative to the standard pattern graphic; and obtaining the photomask layer and position information of all the marked graphics in the original layout data, and the standard pattern graphic corresponding to each marked graphics, based on the marked standard pattern library and the marked information file.

4. The method for inspecting marked patterns in photomask data as described in claim 3, characterized in that, The coordinates are the coordinates of the origin of the marker pattern corresponding to the marker pattern relative to the center of the exposure unit.

5. The method for inspecting marked patterns in photomask data as described in claim 3, characterized in that, The geometric transformation information includes one or both of rotation and mirroring.

6. The method for inspecting marked patterns in photomask data as described in claim 3, characterized in that, The marking layout also includes a prohibited area, and the standard pattern graphic is located within the prohibited area; the method of establishing a plurality of preset windows at the position of the photomask layer corresponding to the cutting path layout data further includes: determining the size of the preset window according to the range of the prohibited area around the standard pattern graphic corresponding to each marking graphic.

7. The method for inspecting marked patterns in photomask data as described in claim 3, characterized in that, The dicing area includes a central dicing area and a peripheral dicing area. The peripheral dicing area surrounds several chip areas and the central dicing area. The central dicing area is located between adjacent chip areas. The marking information file also includes: the exposure range corresponding to each photomask layer, the width of the dicing area, and the step distance.

8. The method for inspecting marked patterns in photomask data as described in claim 7, characterized in that, The method for establishing a plurality of preset windows further includes: obtaining the position information of the outer cutting zone based on the exposure range, the width of the cutting zone, and the step distance; obtaining a plurality of first sub-windows located within the outer cutting zone from the plurality of preset windows based on the position information of the outer cutting zone; and obtaining a second sub-window in the outer cutting zone based on the step distance and each of the first sub-windows, wherein the second sub-windows and the first sub-windows are located on opposite sides of the exposure unit.

9. The method for inspecting marked patterns in photomask data as described in claim 8, characterized in that, The method further includes: acquiring a first sub-marker graphic within a first sub-window, and acquiring a second sub-marker graphic within a corresponding second sub-window; determining whether the area containing the marker graphic will be repeatedly exposed based on the first sub-marker graphic and the corresponding second sub-marker graphic.

10. The method for inspecting marked patterns in photomask data as described in claim 9, characterized in that, The step of determining whether the area where the marker graphic exists will be repeatedly exposed based on the first sub-marker graphic and the corresponding second sub-marker graphic includes: performing an AND operation on the first sub-marker graphic and the corresponding second sub-marker graphic; if the operation result shows no graphic, it means that no area of ​​the marker graphic is repeatedly exposed; if the operation result shows a graphic, it means that the area where the marker graphic exists will be repeatedly exposed.

11. The method for inspecting marked patterns in photomask data as described in claim 1, characterized in that, The photomask data includes data from several production-grade electron beam exposure systems.

12. The method for inspecting marked patterns in photomask data as described in claim 11, characterized in that, The method for obtaining the cut-track photomask data from the photomask data includes: retaining a plurality of production-grade electron beam exposure system data corresponding to the cut-track photomask data from the photomask data, while deleting the remaining plurality of production-grade electron beam exposure system data.

13. The method for inspecting marked patterns in photomask data as described in claim 11, characterized in that, The photomask data also includes a text file, which includes the photomask's layer information and the calling method of several production-grade electron beam exposure system data corresponding to each layer of the photomask; the method of obtaining the cutting track photomask data from the photomask data includes: retaining the calling content of several production-grade electron beam exposure system data corresponding to the cutting track photomask data from the text file, while deleting the remaining calling content.

14. The method for inspecting marked patterns in photomask data as described in claim 13, characterized in that, The cutting path layout data includes layer numbers for each level; before establishing the preset window, it also includes: establishing a correspondence between the layer numbers and the layer names based on the layer information in the text file.

15. The method for inspecting marked patterns in photomask data as described in claim 1, characterized in that, The format conversion includes converting the mask data to GDSII, OASIS, or GDS format.

16. The method for inspecting marked patterns in photomask data as described in claim 1, characterized in that, The data conversion also includes geometric transformation operations; the geometric transformation operations include one or more of the following: scaling operations, mirroring operations, and coordinate transformation operations.

17. The method for inspecting marked patterns in photomask data as described in claim 16, characterized in that, The magnification factor of the graphic size on the photomask compared to the graphic size on the original layout is m, and the magnification operation includes performing a 1 / m magnification operation on the photomask data.

18. The method for inspecting marked patterns in photomask data as described in claim 16, characterized in that, The photomask data and the original layout data are drawn in different ways relative to the light-blocking surface of the photomask, and the mirroring operation includes performing Y-axis mirroring on the photomask data.

19. The method for inspecting marked patterns in photomask data as described in claim 16, characterized in that, The photomask data references a first coordinate system, and the original map data references a second coordinate system. The first coordinate system and the second coordinate system are different. The coordinate transformation operation converts the coordinates in the data to be processed from the first coordinate system to the coordinates in the second coordinate system.

20. The method for inspecting marked patterns in photomask data as described in claim 1, characterized in that, The standard pattern includes a light-transmitting pattern and a light-blocking pattern.

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