Band-gap reference generation circuit and electronic equipment

Abstract

The embodiment of the invention provides a band-gap reference generation circuit and electronic equipment. The band-gap reference generation circuit comprises a voltage pre-stabilizing circuit, a starting bias module, a reference voltage core circuit, an output stage module and a high-frequency filtering module, wherein the pre-voltage-stabilizing circuit is used for adjusting an input voltage into a stable voltage and outputting a first output voltage to the high-frequency filtering module through the starting bias module, the reference voltage core circuit and the output stage module; and the high-frequency filtering module is used for filtering the first output voltage and outputting a second output voltage. Through the embodiment of the invention, the band-gap reference generation circuit can obtain a relatively high power supply voltage rejection ratio at both low frequency and high frequency in a low-power-consumption application scene, so that the stable work of the band-gap reference generation circuit is ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of base stations, and in particular to a bandgap reference generating circuit and an electronic device. Background Art

[0002] The bandgap reference generation circuit is a basic and important module in analog circuits and mixed analog and digital circuits. Its function is to provide a stable voltage reference for other modules of the system, such as high-precision clocks, digital-to-analog converters, analog-to-digital converters, low-dropout linear regulators, power management chips and other circuits. The optimization of its comprehensive performance is extremely important for high-performance analog circuits.

[0003] In practical applications, according to the octagonal rule of circuit design, some key performance parameters are mutually constrained, such as power supply voltage rejection ratio, power consumption, temperature drift, loop stability, etc.; especially in low-power bandgap reference generation circuits, these contradictions are particularly prominent. Under the requirement of ensuring low power consumption of the bandgap reference generation circuit, the performance window of other parameters will inevitably be lost. Summary of the invention

[0004] In view of the above problems, a bandgap reference generation circuit and an electronic device are proposed to overcome the above problems or at least partially solve the above problems, including:

[0005] A bandgap reference generation circuit, the bandgap reference generation circuit comprising: a pre-stabilization circuit, a startup bias module, a reference voltage core circuit, an output stage module and a high-frequency filtering module; wherein,

[0006] The pre-voltage regulator circuit is used to adjust the input voltage to a stable voltage, and output a first output voltage to the high-frequency filter module via the startup bias module, the reference voltage core circuit and the output stage module;

[0007] The high-frequency filtering module filters the first output voltage and outputs a second output voltage.

[0008] Optionally, the pre-stabilization circuit includes:

[0009] A first N-channel metal oxide semiconductor transistor, a second N-channel metal oxide semiconductor transistor, a first resistor, a first NPN transistor, and a second NPN transistor;

[0010] Wherein, the input voltage is connected to the drain of the first N-channel metal oxide semiconductor tube and the drain of the second N-channel metal oxide semiconductor tube respectively;

[0011] The gate of the first N-channel metal oxide semiconductor transistor is connected to the gate of the second N-channel metal oxide semiconductor transistor;

[0012] The source of the first N-channel metal oxide semiconductor transistor is connected to one end of the first resistor, and the other end of the first resistor is respectively connected to the collector of the first NPN transistor and the gate of the first N-channel metal oxide semiconductor transistor;

[0013] The source of the second N-channel metal oxide semiconductor transistor is connected to the collector of the second NPN transistor, and the base of the second N-channel metal oxide semiconductor transistor outputs the stable voltage;

[0014] The emitter of the second NPN transistor is grounded and connected to the base of the first NPN transistor.

[0015] Optionally, the second NPN transistor includes a plurality of transistors, and the emitters and bases of adjacent second NPN transistors are connected.

[0016] Optionally, the high-frequency filtering module includes a fourth resistor and a first capacitor;

[0017] One end of the fourth resistor receives the first output voltage, the other end of the fourth resistor is connected to the upper plate of the first capacitor, and the lower plate of the first capacitor is grounded; the first capacitor is a polar capacitor.

[0018] Optionally, the high-frequency filtering module includes a fifth resistor and a third capacitor;

[0019] One end of the fifth resistor receives the first output voltage, the other end of the fifth resistor is connected to one end of the third capacitor, and the other end of the third capacitor is grounded; the third capacitor is a non-polar capacitor.

[0020] Optionally, the high-frequency filtering module includes a sixth resistor and a fourth N-channel metal oxide semiconductor transistor;

[0021] One end of the sixth resistor receives the first output voltage, the other end of the sixth resistor is connected to the gate of the fourth N-channel metal oxide semiconductor transistor, and the drain and source of the fourth N-channel metal oxide semiconductor transistor are grounded respectively.

[0022] Optionally, the startup bias module is used to provide a bias current.

[0023] Optionally, the reference voltage core circuit is used to provide a reference voltage.

[0024] Optionally, the output stage module is used to adjust the output voltage based on feedback.

[0025] Optionally, the output stage module includes an operational amplifier, a third N-channel metal oxide semiconductor transistor, a second resistor and a third resistor; wherein:

[0026] The input end of the operational amplifier is connected to the reference voltage core circuit; the first power pin of the operational amplifier is connected to the output end of the pre-voltage regulator circuit; the second power pin of the operational amplifier is grounded, the output end of the operational amplifier is connected to the gate of the third N-channel metal oxide semiconductor tube, the drain of the third N-channel metal oxide semiconductor tube is connected to the output end of the pre-voltage regulator circuit, the source of the third N-channel metal oxide semiconductor tube is connected to one end of the second resistor, and the other end of the second resistor is respectively connected to one end of the third resistor and the input end of the operational amplifier;

[0027] The other end of the third resistor is grounded, and the source of the third N-channel metal oxide semiconductor transistor is also connected to the high-frequency filtering module.

[0028] Optionally, the bandgap reference generation circuit further includes:

[0029] A second capacitor and a seventh resistor; one end of the second resistor is connected to the high-frequency filter module, and the other end of the second resistor is grounded;

[0030] One end of the seventh resistor is connected to the high-frequency filtering module, and the other end of the seventh resistor is grounded.

[0031] An embodiment of the present invention further provides an electronic device, comprising the bandgap reference generating circuit as described above.

[0032] The embodiments of the present invention have the following advantages:

[0033] In an embodiment of the present invention, a bandgap reference generation circuit includes: a pre-stabilization circuit, a startup bias module, a reference voltage core circuit, an output stage module, and a high-frequency filter module; wherein the pre-stabilization circuit is used to adjust the input voltage to a stable voltage, and output a first output voltage to the high-frequency filter module via the startup bias module, the reference voltage core circuit, and the output stage module; the high-frequency filter module filters the first output voltage and outputs a second output voltage. Through the embodiment of the present invention, in a low-power application scenario, the bandgap reference generation circuit can obtain a higher power supply voltage rejection ratio at both low and high frequencies, thereby ensuring the stable operation of the bandgap reference generation circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solution of the present invention, the accompanying drawings required for use in the description of the present invention will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative labor.

[0035] Figure 1is a schematic diagram of a bandgap reference generating circuit according to an embodiment of the present invention;

[0036] Figure 2 is a schematic diagram of another bandgap reference generating circuit according to an embodiment of the present invention;

[0037] Figure 3 is a schematic diagram of a high-frequency filtering module according to an embodiment of the present invention;

[0038] Figure 4 is a schematic diagram of another high-frequency filtering module according to an embodiment of the present invention;

[0039] Figure 5 is a schematic diagram of another high-frequency filtering module according to an embodiment of the present invention.

[0040] Description of reference numerals:

[0041] 1. Bandgap reference generating circuit, 2. Pre-voltage regulating circuit, 3. Startup bias module, 4. Reference voltage core circuit, 5. Output stage module, 6. High-frequency filtering module, M1. First N-channel metal oxide semiconductor tube, M2. Second N-channel metal oxide semiconductor tube, R1. First resistor, Q1. First NPN transistor, Q2. Second NPN transistor, R4. Fourth resistor, C1. First capacitor, R5. Fifth resistor, C3. Third capacitor, R6. Sixth resistor, M4. Fourth N-channel metal oxide semiconductor tube, EA. Operational amplifier, M3. Third N-channel metal oxide semiconductor tube, R2. Second resistor, R3. Third resistor, C2. Second capacitor, R7. Seventh resistor. DETAILED DESCRIPTION

[0042] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0043] In traditional bandgap reference generation circuits, power supply voltage is generally used as the power supply source, and at the same time it powers the main operational amplifier. This will inevitably introduce interference factors from multiple links and affect the stability of the output of the bandgap reference generation circuit. However, in traditional applications, the bandgap reference generation circuit does not have low-power application requirements, so the power supply voltage suppression ratio of the bandgap reference generation circuit output can be improved in a variety of ways.

[0044] In low-power applications, due to the low current consumption (generally at the nanoampere level), the power supply voltage rejection ratio of the bandgap reference generation circuit is generally not very high. At the same time, it is even more difficult to ensure a high rejection ratio at both low and high frequencies.

[0045] To solve this problem, the present invention proposes a bandgap reference generation circuit, which uses a simple predetermined voltage stabilization circuit and introduces a high-frequency filtering module, so as to obtain a higher power supply voltage rejection ratio at both low and high frequencies, thereby ensuring the stable operation of the bandgap reference generation circuit. Figure 1 , showing a schematic diagram of a bandgap reference generating circuit according to an embodiment of the present invention.

[0046] like Figure 1 As shown, the bandgap reference generation circuit 1 may include: a pre-stabilization circuit 2, a startup bias module 3, a reference voltage core circuit 4, an output stage module 5 and a high-frequency filtering module 6; wherein,

[0047] The pre-voltage regulator circuit 2 is used to adjust the input voltage to a stable voltage, and output a first output voltage to the high-frequency filter module 6 via the startup bias module 3, the reference voltage core circuit 4 and the output stage module 5;

[0048] The high frequency filtering module 6 filters the first output voltage and outputs a second output voltage.

[0049] In an embodiment of the present invention, the bandgap reference generating circuit 1 can be composed of a startup bias module 3, a reference voltage core circuit 4 and an output stage module 5; wherein the startup bias module 3 is used to provide a bias current, the reference voltage core circuit 4 is used to provide a reference reference voltage, and the output stage module 5 is used to adjust the output voltage based on feedback.

[0050] Specifically, the startup bias module 3 provides the bias current required for the bandgap reference generating circuit 1 to work, the reference voltage core circuit 4 is used to generate the reference voltage required by the subsequent circuit, and the output stage module 5 is used to increase the load capacity of the reference voltage to ensure that the reference voltage has a certain current driving capability.

[0051] In order to reduce the power consumption of the bandgap reference generating circuit 1 and ensure its application in low-power consumption scenarios, an embodiment of the present invention can adopt a predetermined voltage stabilizing circuit with a simple structure on the structure of the above-mentioned bandgap reference generating circuit 1 to simultaneously meet the requirements of low current consumption and improved power supply voltage suppression ratio in the low frequency band. At the same time, a high-frequency power supply suppression ratio improving module (i.e., high-frequency filtering module 6) is added to the circuit line to improve the high-frequency power supply voltage suppression ratio. Through such a design scheme, it can be ensured that under low power consumption conditions, the bandgap reference has a high power supply voltage suppression ratio when working at low frequency and high frequency, thereby ensuring stable output.

[0052] The pre-stabilizing circuit 2 in the bandgap reference generating circuit 1 ensures the power supply voltage rejection ratio in the low frequency band, and the high frequency filtering module 6 ensures the power supply voltage rejection ratio in the high frequency band.

[0053] Specifically, the power supply voltage can be connected to the pre-voltage regulator circuit 2 and serve as the power supply source for the bandgap reference generating circuit 1; the startup bias module 3 can be connected to the pre-voltage regulator circuit 2 and the reference voltage core circuit 4 respectively; the reference voltage core circuit 4 can be connected to the output stage module 5, and the high-frequency filter module 6 can be connected to the output end of the output stage module 5.

[0054] In the embodiment of the present invention, the power supply voltage is connected to the pre-stabilizing circuit 2. The power supply voltage is first subjected to preliminary voltage stabilization processing by the pre-stabilizing circuit 2. The main purpose of the pre-stabilizing circuit 2 is to provide a relatively stable voltage output when the power supply voltage fluctuates or changes, so as to ensure the normal operation of the subsequent circuit.

[0055] The pre-stabilizing circuit 2 can also prevent the instantaneous fluctuation or noise of the power supply voltage from affecting the bandgap reference generating circuit 1, thereby improving the stability and reliability of the entire system.

[0056] The startup bias module 3 is connected to the pre-voltage regulator circuit 2 and the reference voltage core circuit 4; the startup bias module 3 provides an initial bias current or voltage for the pre-voltage regulator circuit 2 and the reference voltage core circuit 4 to ensure that these circuits can work normally when the system starts.

[0057] The startup bias module 3 provides necessary initial conditions when the system is powered on, so that the pre-regulator circuit 2 and the reference voltage core circuit 4 can quickly enter a stable working state.

[0058] The startup bias module 3 can also continuously provide a stable bias current or voltage during the operation of the system, ensuring that the pre-regulator circuit 2 and the reference voltage core circuit 4 remain stable throughout the entire working cycle.

[0059] The reference voltage core circuit 4 is connected to the output stage module 5; the reference voltage core circuit 4 is responsible for generating an accurate and stable reference voltage. This reference voltage is the reference voltage of the entire system and is used for voltage comparison of various circuits, ADC (Analog-to-Digital Converter) / DAC (Digital-to-Analog Converter) conversion, etc. The generated reference voltage is transmitted to other parts of the system through the output stage module 5 to ensure that the entire system can work with this reference voltage as a reference.

[0060] The output stage module 5 may further amplify or adjust the reference voltage to meet the requirements of different circuits.

[0061] The high-frequency filter module 6 is connected to the output end of the output stage module 5; the high-frequency filter module 6 is used to filter out the high-frequency noise or interference in the output signal of the output stage module 5. This can ensure that the final output reference voltage or signal has higher purity and stability. By filtering out the high-frequency noise, the high-frequency filter module 6 can significantly improve the quality of the output signal, ensuring that the system can maintain high accuracy and high reliability under various working conditions; filtering out the high-frequency noise can also protect the subsequent circuits from noise interference, ensuring the stable operation of the entire system.

[0062] In the embodiment of the present invention, the bandgap reference generation circuit 1 includes: a pre-stabilization circuit 2, a startup bias module 3, a reference voltage core circuit 4, an output stage module 5 and a high-frequency filter module 6; wherein the pre-stabilization circuit 2 is used to adjust the input voltage to a stable voltage, and output a first output voltage to the high-frequency filter module 6 via the startup bias module 3, the reference voltage core circuit 4 and the output stage module 5; the high-frequency filter module 6 filters the first output voltage and outputs a second output voltage. Through the embodiment of the present invention, in a low-power application scenario, the bandgap reference generation circuit 1 can obtain a higher power supply voltage rejection ratio at both low and high frequencies, thereby ensuring the stable operation of the bandgap reference generation circuit 1.

[0063] In one embodiment of the present invention, the pre-stabilization circuit 2 includes:

[0064] A first N-channel metal oxide semiconductor transistor M1, a second N-channel metal oxide semiconductor transistor M2, a first resistor R1, a first NPN transistor Q1 and a second NPN transistor Q2;

[0065] The input voltage is connected to the drain of the first N-channel metal oxide semiconductor transistor M1 and the drain of the second N-channel metal oxide semiconductor transistor M2 respectively;

[0066] The gate of the first N-channel metal oxide semiconductor transistor M1 is connected to the gate of the second N-channel metal oxide semiconductor transistor M2;

[0067] The source of the first N-channel metal oxide semiconductor transistor M1 is connected to one end of the first resistor R1, and the other end of the first resistor R1 is connected to the collector of the first NPN transistor Q1 and the gate of the first N-channel metal oxide semiconductor transistor M1 respectively;

[0068] The source of the second N-channel metal oxide semiconductor transistor M2 is connected to the collector of the second NPN transistor Q2, and the base of the second N-channel metal oxide semiconductor transistor M2 outputs a stable voltage;

[0069] The emitter of the second NPN transistor Q2 is grounded and connected to the base of the first NPN transistor Q1 .

[0070] In some feasible embodiments, the pre-regulator circuit 2 may be composed of a first N-channel metal oxide semiconductor transistor M1, a second N-channel metal oxide semiconductor transistor M2, a first resistor R1, a first NPN transistor Q1, and a second NPN transistor Q2. The first N-channel metal oxide semiconductor transistor M1 and the second N-channel metal oxide semiconductor transistor M2 may be NMOS (N-Channel Metal-Oxide-Semiconductor, N-channel metal oxide semiconductor) transistors.

[0071] Specifically, an N-channel metal oxide semiconductor is a field effect transistor (FET) that can be used as a switch to control the current between the source and the drain by controlling the gate voltage. When the gate voltage is higher than a certain threshold voltage (Vth), the N-channel metal oxide semiconductor is turned on, allowing current to flow from the source to the drain; when the gate voltage is lower than the threshold voltage, the N-channel metal oxide semiconductor is turned off, and the current is almost zero.

[0072] In amplifier circuits, N-channel metal oxide semiconductor tubes can be used to amplify input signals. By controlling the gate voltage, the current between the source and the drain can be adjusted to achieve signal amplification.

[0073] When the gate voltage (Vgs) of the N-channel metal oxide semiconductor tube is higher than the threshold voltage (Vth), the N-channel metal oxide semiconductor tube enters the on state and the current can flow from the source (Source) to the drain (Drain).

[0074] When Vgs is lower than Vth, the N-channel metal oxide semiconductor tube enters the cut-off state and the current is almost zero.

[0075] In addition, N-channel metal oxide semiconductors are widely used in digital circuits, such as CMOS logic gates. By combining multiple N-channel metal oxide semiconductors and PMOS (P-Channel Metal-Oxide-Semiconductor, P-channel metal oxide semiconductor), various logic functions such as AND gates, OR gates, and NOT gates can be realized.

[0076] N-channel metal oxide semiconductors excel in low-power applications, especially in battery-powered devices. By precisely controlling the gate voltage, the power consumption of the circuit can be effectively managed.

[0077] In signal processing circuits, N-channel metal oxide semiconductor tubes can be used to implement functions such as filters and modulators to process signals by controlling current.

[0078] In some feasible embodiments, the first N-channel metal oxide semiconductor transistor M1 and the second N-channel metal oxide semiconductor transistor M2 can be depletion-mode N-channel metal oxide semiconductor transistors; for a depletion-mode N-channel metal oxide semiconductor transistor, at zero gate voltage (Vgs = 0), the depletion-mode N-channel metal oxide semiconductor transistor is already in the on state, and current can flow from the source to the drain. To turn off the depletion-mode N-channel metal oxide semiconductor transistor, a negative gate voltage (Vgs < 0) needs to be applied.

[0079] The threshold voltage (Vth) of a depletion-mode N-channel metal oxide semiconductor transistor is negative. When Vgs < Vth, the N-channel metal oxide semiconductor transistor is turned off; when Vgs > Vth, the N-channel metal oxide semiconductor transistor is turned on.

[0080] When Vgs > Vth and Vds > Vgs - Vth, the depletion-mode N-channel metal oxide semiconductor transistor operates in the saturation region, and the current hardly changes with Vds and is mainly controlled by Vgs.

[0081] When Vgs > Vth and Vds < Vgs - Vth, the depletion-mode N-channel metal oxide semiconductor transistor operates in the linear region, and the current changes with Vds.

[0082] The first NPN transistor Q1 and the second NPN transistor Q2 can be NPN (Negative-Positive-Negative) transistors; an NPN transistor is a bipolar junction transistor (BJT), which consists of two N-type semiconductor materials sandwiching a P-type semiconductor material. An NPN transistor has three electrodes: the emitter (E), the base (B), and the collector (C).

[0083] The main function of an NPN transistor is current amplification. By controlling the base current (Ib), the collector current (Ic) can be controlled. Ic is β times Ib (β is the current amplification factor), that is, Ic = β * Ib.

[0084] An NPN transistor can also be used as a switch. When the base current is large enough, the NPN transistor enters the saturation state, and conduction occurs between the collector and the emitter; when the base current is zero, the NPN transistor enters the cut-off state, and cut-off occurs between the collector and the emitter.

[0085] When Vbe is between 0.6V and 0.7V, the NPN transistor starts to conduct.

[0086] In the amplification region, Ic is mainly controlled by Ib; in the saturation region, Ic hardly changes with Vce.

[0087] β=Ic / Ib, which indicates the amplification factor of base current to collector current. β is an important parameter of NPN transistor, usually ranging from tens to hundreds.

[0088] When the NPN transistor enters saturation, the voltage between the collector and emitter is usually between 0.2V and 0.3V.

[0089] When the base is open, the leakage current between the collector and the emitter is usually very small and can be ignored.

[0090] In practical applications, such as Figure 2 As shown, the power supply voltage can be connected to the pre-voltage regulator circuit 2 and serve as the power supply source for the bandgap reference generating circuit 1; the startup bias module 3 can be connected to the pre-voltage regulator circuit 2 and the reference voltage core circuit 4 respectively; the reference voltage core circuit 4 can be connected to the output stage module 5, and the high-frequency filter module 6 can be connected to the output end of the output stage module 5.

[0091] In the embodiment of the present invention, the power supply voltage is connected to the pre-stabilizing circuit 2. The power supply voltage is first subjected to preliminary voltage stabilization processing by the pre-stabilizing circuit 2. The main purpose of the pre-stabilizing circuit 2 is to provide a relatively stable voltage output when the power supply voltage fluctuates or changes, so as to ensure the normal operation of the subsequent circuit.

[0092] The pre-stabilizing circuit 2 can also prevent the instantaneous fluctuation or noise of the power supply voltage from affecting the bandgap reference generating circuit 1, thereby improving the stability and reliability of the entire system.

[0093] Specifically, the input voltage (ie, the power supply voltage) is connected to the drain of the first N-channel metal oxide semiconductor transistor M1 , and the input voltage is also connected to the drain of the second N-channel metal oxide semiconductor transistor M2 to power the bandgap reference generating circuit 1 .

[0094] The gate of the first N-channel metal oxide semiconductor transistor M1 may be connected to the gate of the second N-channel metal oxide semiconductor transistor M2; the source of the first N-channel metal oxide semiconductor transistor M1 may be connected to one end of the first resistor R1.

[0095] In addition, the other end of the first resistor R1 is connected to the collector of the first NPN transistor Q1 and the gate of the first N-channel metal oxide semiconductor transistor M1 respectively.

[0096] The source of the second N-channel metal oxide semiconductor transistor M2 can be connected to the collector of the second NPN transistor Q2, and the base of the second N-channel metal oxide semiconductor transistor M2 can output a stable voltage to the startup bias module 3, the reference voltage core circuit 4, the output stage module 5 and the high-frequency filter module 6;

[0097] The emitter of the second NPN transistor Q2 may be grounded, and the emitter of the second NPN transistor Q2 may be connected to the base of the first NPN transistor Q1 .

[0098] In some feasible embodiments, by adjusting the resistance value of the first resistor R1, the current consumption of the voltage stabilizing circuit can be controlled, thereby controlling the overall power consumption of the bandgap reference generating circuit 1. When the power supply is powered on, because the first N-channel metal oxide semiconductor tube M1 and the second N-channel metal oxide semiconductor tube M2 use depletion-type N-channel metal oxide semiconductor tubes, the gates of the first N-channel metal oxide semiconductor tube M1 and the second N-channel metal oxide semiconductor tube M2 are at a low level, and the channels of the first N-channel metal oxide semiconductor tube M1 and the second N-channel metal oxide semiconductor tube M2 are automatically turned on, so no additional startup circuit is required, and the current passes through the first resistor R1, the first NPN tube and the second NPN tube, and through the series connection of the first NPN tube and the second NPN tube, V PRE The voltage (i.e., the regulated voltage) is clamped at a stable voltage value.

[0099] In addition, the startup bias module 3 is connected to the output end of the pre-stabilization circuit 2 and the reference voltage core circuit 4; the startup bias module 3 provides an initial bias current or voltage for the pre-stabilization circuit 2 and the reference voltage core circuit 4 to ensure that these circuits can work normally when the system starts.

[0100] The startup bias module 3 provides necessary initial conditions when the system is powered on, so that the pre-regulator circuit 2 and the reference voltage core circuit 4 can quickly enter a stable working state.

[0101] The startup bias module 3 can also continuously provide a stable bias current or voltage during the operation of the system, ensuring that the pre-regulator circuit 2 and the reference voltage core circuit 4 remain stable throughout the entire working cycle.

[0102] The reference voltage core circuit 4 is connected to the output stage module 5; the reference voltage core circuit 4 is responsible for generating an accurate and stable reference voltage. This reference voltage is the reference voltage of the entire system and is used for voltage comparison of various circuits, ADC (Analog-to-Digital Converter) / DAC (Digital-to-Analog Converter) conversion, etc. The generated reference voltage is transmitted to other parts of the system through the output stage module 5 to ensure that the entire system can work with this reference voltage as a reference.

[0103] The output stage module 5 may further amplify or adjust the reference voltage to meet the requirements of different circuits.

[0104] The high-frequency filter module 6 is connected to the output end of the output stage module 5; the high-frequency filter module 6 is used to filter out the high-frequency noise or interference in the output signal of the output stage module 5. This can ensure that the final output reference voltage or signal has higher purity and stability. By filtering out the high-frequency noise, the high-frequency filter module 6 can significantly improve the quality of the output signal, ensuring that the system can maintain high accuracy and high reliability under various working conditions; filtering out the high-frequency noise can also protect the subsequent circuits from noise interference, ensuring the stable operation of the entire system.

[0105] In an embodiment of the present invention, the second NPN transistor Q2 includes a plurality of transistors, and the emitters and bases of adjacent second NPN transistors Q2 are connected.

[0106] In some feasible embodiments, the second NPN transistor Q2 may include a plurality of transistors, and the emitter and the base of adjacent second NPN transistors Q2 are connected, and the collector is connected to the emitter of the previous NPN transistor.

[0107] For example, Figure 2 As shown, the second NPN transistor Q2 may include Q2, Q3, ..., Qn, wherein the emitter of Q2 is connected to the base of Q3, and the collector of Q3 is connected to the emitter of Q2.

[0108] Through the series connection of Q1~Qn, V PRE The voltage is clamped at a stable voltage value, and this voltage value is adjusted as the number n of transistors in series changes. At the same time, the influence of the VPRE node voltage on the change of VCC is reduced, and the change of the power supply voltage can be suppressed in the low frequency band.

[0109] The power supply voltage rejection ratio PSRR (Power Supply Rejection Ratio) can be expressed as:

[0110]

[0111] Among them, V PRE—OUT is the first output voltage; VCC is the input voltage.

[0112] In one embodiment of the present invention, the output stage module 5 includes an operational amplifier EA, a third N-channel metal oxide semiconductor transistor M3, a second resistor R2 and a third resistor R3; wherein:

[0113] The input end of the operational amplifier EA is connected to the reference voltage core circuit 4; the first power pin of the operational amplifier EA is connected to the output end of the pre-voltage regulator circuit 2; the second power pin of the operational amplifier EA is grounded, the output end of the operational amplifier EA is connected to the gate of the third N-channel metal oxide semiconductor tube M3, the drain of the third N-channel metal oxide semiconductor tube M3 is connected to the output end of the pre-voltage regulator circuit 2, the source of the third N-channel metal oxide semiconductor tube M3 is connected to one end of the second resistor R2, and the other end of the second resistor R2 is respectively connected to one end of the third resistor R3 and the input end of the operational amplifier EA;

[0114] The other end of the third resistor R3 is grounded, and the source of the third N-channel metal oxide semiconductor transistor M3 is also connected to the high-frequency filter module 6 .

[0115] In some feasible embodiments, the power supply voltage can be connected to the pre-voltage regulator circuit 2 and serve as the power supply source for the bandgap reference generating circuit 1; the startup bias module 3 can be connected to the pre-voltage regulator circuit 2 and the reference voltage core circuit 4 respectively; the reference voltage core circuit 4 can be connected to the output stage module 5, and the high-frequency filter module 6 can be connected to the output end of the output stage module 5.

[0116] In the embodiment of the present invention, the power supply voltage is connected to the pre-stabilizing circuit 2. The power supply voltage is first subjected to preliminary voltage stabilization processing by the pre-stabilizing circuit 2. The main purpose of the pre-stabilizing circuit 2 is to provide a relatively stable voltage output when the power supply voltage fluctuates or changes, so as to ensure the normal operation of the subsequent circuit.

[0117] The pre-stabilizing circuit 2 can also prevent the instantaneous fluctuation or noise of the power supply voltage from affecting the bandgap reference generating circuit 1, thereby improving the stability and reliability of the entire system.

[0118] The startup bias module 3 is connected to the pre-voltage regulator circuit 2 and the reference voltage core circuit 4; the startup bias module 3 provides an initial bias current or voltage for the pre-voltage regulator circuit 2 and the reference voltage core circuit 4 to ensure that these circuits can work normally when the system starts.

[0119] The startup bias module 3 provides necessary initial conditions when the system is powered on, so that the pre-regulator circuit 2 and the reference voltage core circuit 4 can quickly enter a stable working state.

[0120] The startup bias module 3 can also continuously provide a stable bias current or voltage during the operation of the system, ensuring that the pre-regulator circuit 2 and the reference voltage core circuit 4 remain stable throughout the entire working cycle.

[0121] The reference voltage core circuit 4 is connected to the output stage module 5; the reference voltage core circuit 4 is responsible for generating an accurate and stable reference voltage. This reference voltage is the reference voltage of the entire system and is used for voltage comparison of various circuits, ADC (Analog-to-Digital Converter) / DAC (Digital-to-Analog Converter) conversion, etc. The generated reference voltage is transmitted to other parts of the system through the output stage module 5 to ensure that the entire system can work with this reference voltage as a reference.

[0122] The output stage module 5 may further amplify or adjust the reference voltage to meet the requirements of different circuits.

[0123] The high-frequency filter module 6 is connected to the output end of the output stage module 5; the high-frequency filter module 6 is used to filter out the high-frequency noise or interference in the output signal of the output stage module 5. This can ensure that the final output reference voltage or signal has higher purity and stability. By filtering out the high-frequency noise, the high-frequency filter module 6 can significantly improve the quality of the output signal, ensuring that the system can maintain high accuracy and high reliability under various working conditions; filtering out the high-frequency noise can also protect the subsequent circuits from noise interference, ensuring the stable operation of the entire system.

[0124] The output stage module 5 may be composed of an operational amplifier EA, a third N-channel metal oxide semiconductor tube M3, a second resistor R2 and a third resistor R3; the operational amplifier EA is a high-gain, differential input electronic amplifier; the operational amplifier EA may amplify the input signal to a desired voltage level through an external feedback circuit.

[0125] The third N-channel MOS transistor M3 is similar to the first N-channel MOS transistor M1 and the second N-channel MOS transistor M2, and will not be described in detail herein.

[0126] In the embodiment of the present invention, the input end of the operational amplifier EA can be connected to the reference voltage core circuit 4 and receive the V output by the reference voltage core circuit 4. COMP (voltage compensation signal).

[0127] A first power supply pin of the operational amplifier EA may be connected to an output end of the pre-regulator circuit 2 , and a second power supply pin of the operational amplifier EA may be grounded.

[0128] The output end of the operational amplifier EA may be connected to the gate of the third N-channel metal oxide semiconductor transistor M3 , and the drain of the third N-channel metal oxide semiconductor transistor M3 may be connected to the output end of the pre-regulator circuit 2 .

[0129] The source of the third N-channel metal oxide semiconductor transistor M3 may be connected to one end of the second resistor R2, and the other end of the second resistor R2 may be connected to one end of the third resistor R3 and the input end of the operational amplifier EA respectively.

[0130] In practical applications, the other end of the third resistor R3 can be grounded, and the source of the third N-channel metal oxide semiconductor transistor M3 is also connected to the high-frequency filter module 6 , and the first output voltage is input to the high-frequency filter module 6 .

[0131] In one embodiment of the present invention, the bandgap reference generation circuit 1 further includes:

[0132] A second capacitor C2 and a seventh resistor R7; one end of the second resistor R2 is connected to the high-frequency filter module 6, and the other end of the second resistor R2 is grounded;

[0133] One end of the seventh resistor R7 is connected to the high-frequency filter module 6 , and the other end of the seventh resistor R7 is grounded.

[0134] In some feasible embodiments, the power supply voltage can be connected to the pre-voltage regulator circuit 2 and serve as the power supply source for the bandgap reference generating circuit 1; the startup bias module 3 can be connected to the pre-voltage regulator circuit 2 and the reference voltage core circuit 4 respectively; the reference voltage core circuit 4 can be connected to the output stage module 5, and the high-frequency filter module 6 can be connected to the output end of the output stage module 5.

[0135] In the embodiment of the present invention, the power supply voltage is connected to the pre-stabilizing circuit 2. The power supply voltage is first subjected to preliminary voltage stabilization processing by the pre-stabilizing circuit 2. The main purpose of the pre-stabilizing circuit 2 is to provide a relatively stable voltage output when the power supply voltage fluctuates or changes, so as to ensure the normal operation of the subsequent circuit.

[0136] The pre-stabilizing circuit 2 can also prevent the instantaneous fluctuation or noise of the power supply voltage from affecting the bandgap reference generating circuit 1, thereby improving the stability and reliability of the entire system.

[0137] The startup bias module 3 is connected to the pre-voltage regulator circuit 2 and the reference voltage core circuit 4; the startup bias module 3 provides an initial bias current or voltage for the pre-voltage regulator circuit 2 and the reference voltage core circuit 4 to ensure that these circuits can work normally when the system starts.

[0138] The startup bias module 3 provides necessary initial conditions when the system is powered on, so that the pre-regulator circuit 2 and the reference voltage core circuit 4 can quickly enter a stable working state.

[0139] The startup bias module 3 can also continuously provide a stable bias current or voltage during the operation of the system, ensuring that the pre-regulator circuit 2 and the reference voltage core circuit 4 remain stable throughout the entire working cycle.

[0140] The reference voltage core circuit 4 is connected to the output stage module 5; the reference voltage core circuit 4 is responsible for generating an accurate and stable reference voltage. This reference voltage is the reference voltage of the entire system and is used for voltage comparison of various circuits, ADC (Analog-to-Digital Converter) / DAC (Digital-to-Analog Converter) conversion, etc. The generated reference voltage is transmitted to other parts of the system through the output stage module 5 to ensure that the entire system can work with this reference voltage as a reference.

[0141] The output stage module 5 may further amplify or adjust the reference voltage to meet the requirements of different circuits.

[0142] The high-frequency filter module 6 is connected to the output end of the output stage module 5; the high-frequency filter module 6 is used to filter out the high-frequency noise or interference in the output signal of the output stage module 5. This can ensure that the final output reference voltage or signal has higher purity and stability. By filtering out the high-frequency noise, the high-frequency filter module 6 can significantly improve the quality of the output signal, ensuring that the system can maintain high accuracy and high reliability under various working conditions; filtering out the high-frequency noise can also protect the subsequent circuits from noise interference, ensuring the stable operation of the entire system.

[0143] Based on the above circuit structure, the bandgap reference generation circuit 1 may further include a second capacitor C2 and a seventh resistor R7, wherein one end of the second resistor R2 may be connected to the high-frequency filter module 6, and the other end of the second resistor R2 may be grounded.

[0144] In addition, one end of the seventh resistor R7 may be connected to the high-frequency filter module 6 ; and the other end of the seventh resistor R7 may be grounded.

[0145] In one embodiment of the present invention, the high frequency filter module 6 includes a fourth resistor R4 and a first capacitor C1;

[0146] One end of the fourth resistor R4 receives the first output voltage, the other end of the fourth resistor R4 is connected to the upper plate of the first capacitor C1, and the lower plate of the first capacitor C1 is grounded; the first capacitor C1 is a polar capacitor.

[0147] In some possible embodiments, such as Figure 3 As shown, the high-frequency filtering module 6 may include a fourth resistor R4 and a first capacitor C1; wherein one end of the fourth resistor R4 may be connected to the source of the third N-channel metal oxide semiconductor transistor M3 and receive the first output voltage (V PRE—OUT ).

[0148] By adjusting the resistance of the fourth resistor R4 and the capacitance of the first capacitor C1, the clutter filtering above a certain frequency can be controlled, which can improve the suppression of the high-frequency power supply voltage. The frequency calculation formula is:

[0149]

[0150] Setting reasonable R and C values ​​can filter out f c Interference signals above the frequency.

[0151] In practical applications, the first capacitor C1 may be a polarized capacitor. A polarized capacitor means that the capacitor has positive and negative polarities and must be connected to the circuit in the correct polarity, otherwise the capacitor may be damaged or the circuit may malfunction.

[0152] Polarized capacitors of the electrolytic type have large capacitance values ​​and low equivalent series resistance (ESR) and are typically used in applications such as power supply filtering, coupling, and decoupling.

[0153] The polarity of electrolytic capacitors has clear positive and negative polarities, usually marked with "+" and "-" symbols on the capacitor casing.

[0154] Tantalum capacitors are polar capacitors with higher capacitance and lower leakage current, small size, and suitable for high-density circuit boards.

[0155] Tantalum capacitors have clear positive and negative polarity, usually marked with a "+" sign on the capacitor casing.

[0156] In one embodiment of the present invention, the high frequency filter module 6 includes a fifth resistor R5 and a third capacitor C3;

[0157] One end of the fifth resistor R5 receives the first output voltage, the other end of the fifth resistor R5 is connected to one end of the third capacitor C3, and the other end of the third capacitor C3 is grounded; the third capacitor C3 is a non-polar capacitor.

[0158] In some possible embodiments, such as Figure 4 As shown, the high-frequency filter module 6 can also be composed of a fifth resistor R5 and a third capacitor C3; wherein one end of the fifth resistor R5 can be connected to the output end of the output stage module 5 and receive the first output voltage. The other end of the fifth resistor R5 can be connected to one end of the third capacitor C3.

[0159] In practical applications, the third capacitor C3 may be a non-polarized capacitor. A non-polarized capacitor refers to a capacitor that has no clear positive or negative polarity and can be connected to a circuit in any direction.

[0160] Ceramic capacitors are non-polar capacitors with small capacitance values ​​and low equivalent series resistance (ESR), small size, and suitable for high-frequency circuits.

[0161] Ceramic capacitors have no polarity and can be connected to the circuit in either direction.

[0162] The non-polar capacitance of film capacitors has high accuracy and stability and is suitable for precision circuits and high-voltage circuits.

[0163] Non-polar film capacitors have no polarity and can be connected to the circuit in any direction.

[0164] The non-polar capacitors of mica capacitors have high precision and stability and are suitable for high-frequency circuits and high-voltage circuits.

[0165] Mica capacitors are non-polar capacitors that have no polarity and can be connected to the circuit in any direction.

[0166] In one embodiment of the present invention, the high frequency filter module 6 includes a sixth resistor R6 and a fourth N-channel metal oxide semiconductor transistor M4;

[0167] One end of the sixth resistor R6 receives the first output voltage, the other end of the sixth resistor R6 is connected to the gate of the fourth N-channel metal oxide semiconductor transistor M4, and the drain and source of the fourth N-channel metal oxide semiconductor transistor M4 are grounded respectively.

[0168] In some possible embodiments, such as Figure 5 As shown, the high-frequency filtering module 6 can also be composed of a sixth resistor R6 and a fourth N-channel metal oxide semiconductor tube M4; wherein one end of the sixth resistor R6 can be connected to the output end of the output stage module 5 and receive the first output voltage; the other end of the sixth resistor R6 can be connected to the gate of the fourth N-channel metal oxide semiconductor tube M4.

[0169] In addition, the drain and source of the fourth N-channel metal oxide semiconductor transistor M4 may be grounded respectively.

[0170] For example, Figure 2 As shown, the input end of the startup bias module 3 can be connected to the output end of the pre-regulator circuit 2, and the output end of the startup bias module 3 can be grounded.

[0171] The input end of the reference voltage core circuit 4 can be connected to the output end of the pre-regulator circuit 2, and the output end of the startup bias module 3 can be grounded and output to the input end of the operational amplifier EA.

[0172] When the power supply is powered on, a voltage V is generated by the pre-regulator circuit 2, which is less affected by the current and voltage. PRE , V PRE Provides a power supply voltage source for the next stage circuit.ref_out At the output end, a high-frequency filter module 6 is used to filter out high-frequency power supply fluctuation interference.

[0173] The drain ends of the first N-channel metal oxide semiconductor transistor M1 and the second N-channel metal oxide semiconductor transistor M2 are connected to the power supply VCC, the source end of the first N-channel metal oxide semiconductor transistor M1 is connected to the collector of the first NPN transistor Q1 (Q1) through the first resistor R1, the source end of the second N-channel metal oxide semiconductor transistor M2 is connected to the collector of the second NPN transistor Q2, and the emitters of the first NPN transistors Q1 and Qn are connected to the chip ground.

[0174] Among them, the second NPN transistor Q2 may include Q2~Qn; Q2~Qn adopts a diode connection method, that is, the emitter and base of the transistor Q2~Qn are connected. By adjusting the resistance value of the first resistor R1, the current consumption of the pre-voltage regulator module can be controlled, thereby controlling the overall power consumption of the bandgap reference module. When the power supply VCC is powered on, because the first N-channel metal oxide semiconductor tube M1 and the second N-channel metal oxide semiconductor tube M2 adopt depletion-type N-channel metal oxide semiconductor tubes, the gates of the first N-channel metal oxide semiconductor tube M1 and the second N-channel metal oxide semiconductor tube M2 are at a low level, and the channels of the first N-channel metal oxide semiconductor tube M1 and the second N-channel metal oxide semiconductor tube M2 are automatically turned on, so no additional startup circuit is required. The current passes through the first resistor R1 and Q1~Qn, and through the series connection of Q1~Qn, V PRE The voltage is clamped at a stable voltage value, and this voltage value is adjusted as the number of transistors in series n changes, while reducing V PRE The node voltage is affected by the change of VCC, and the change of power supply voltage can be suppressed in the low frequency band.

[0175] V PRE The voltage is used as the power supply voltage of other modules except the pre-regulator circuit 2 in the bandgap reference generating circuit 1, so that other modules can work normally. The gate of the third N-channel metal oxide semiconductor tube M3 is controlled through the output end of the operational amplifier EA, so that the third N-channel metal oxide semiconductor tube M3 is in the on state, and the output V ref_out The second resistor R2 and the third resistor R3 form a feedback resistor network to convert V ref_out The reference voltage is fed back to the operational amplifier EA for negative feedback comparison, thereby controlling V ref_out The reference voltage is output regulated.

[0176] In one embodiment of the present invention, an electronic device is also provided, which may include a bandgap reference generating circuit as mentioned in any of the above embodiments; some or all of the components in the electronic device can be powered by the bandgap reference generating circuit, and the embodiment of the present invention is not limited to this.

[0177] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0178] The above provides a detailed introduction to a bandgap reference generating circuit and an electronic device. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for a person skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A bandgap reference generation circuit, characterized in that: The bandgap reference generation circuit includes: a pre-stabilization circuit, a startup bias module, a reference voltage core circuit, an output stage module and a high-frequency filtering module; wherein, The pre-voltage regulator circuit is used to adjust the input voltage to a stable voltage, and output a first output voltage to the high-frequency filter module via the startup bias module, the reference voltage core circuit and the output stage module; The high-frequency filtering module filters the first output voltage and outputs a second output voltage.

2. The bandgap reference generation circuit according to claim 1, characterized in that: The pre-stabilization circuit comprises: A first N-channel metal oxide semiconductor transistor, a second N-channel metal oxide semiconductor transistor, a first resistor, a first NPN transistor, and a second NPN transistor; Wherein, the input voltage is connected to the drain of the first N-channel metal oxide semiconductor tube and the drain of the second N-channel metal oxide semiconductor tube respectively; The gate of the first N-channel metal oxide semiconductor transistor is connected to the gate of the second N-channel metal oxide semiconductor transistor; The source of the first N-channel metal oxide semiconductor transistor is connected to one end of the first resistor, and the other end of the first resistor is respectively connected to the collector of the first NPN transistor and the gate of the first N-channel metal oxide semiconductor transistor; The source of the second N-channel metal oxide semiconductor transistor is connected to the collector of the second NPN transistor, and the base of the second N-channel metal oxide semiconductor transistor outputs the stable voltage; The emitter of the second NPN transistor is grounded and connected to the base of the first NPN transistor.

3. The bandgap reference generating circuit according to claim 2, characterized in that: The second NPN transistors include a plurality of transistors, and the emitters and bases of adjacent second NPN transistors are connected.

4. The bandgap reference generating circuit according to claim 1, characterized in that: The high-frequency filtering module includes a fourth resistor and a first capacitor; One end of the fourth resistor receives the first output voltage, the other end of the fourth resistor is connected to the upper plate of the first capacitor, and the lower plate of the first capacitor is grounded; the first capacitor is a polar capacitor.

5. The bandgap reference generating circuit according to claim 1, characterized in that: The high-frequency filtering module includes a fifth resistor and a third capacitor; One end of the fifth resistor receives the first output voltage, the other end of the fifth resistor is connected to one end of the third capacitor, and the other end of the third capacitor is grounded; the third capacitor is a non-polar capacitor.

6. The bandgap reference generating circuit according to claim 1, characterized in that: The high-frequency filtering module includes a sixth resistor and a fourth N-channel metal oxide semiconductor tube; One end of the sixth resistor receives the first output voltage, the other end of the sixth resistor is connected to the gate of the fourth N-channel metal oxide semiconductor transistor, and the drain and source of the fourth N-channel metal oxide semiconductor transistor are grounded respectively.

7. The bandgap reference generating circuit according to claim 1, characterized in that: The startup bias module is used to provide a bias current.

8. The bandgap reference generating circuit according to claim 1, characterized in that: The reference voltage core circuit is used to provide a reference voltage.

9. The bandgap reference generating circuit according to claim 1, characterized in that: The output stage module is used to adjust the output voltage based on feedback.

10. The bandgap reference generation circuit according to claim 8, characterized in that: The output stage module includes an operational amplifier, a third N-channel metal oxide semiconductor tube, a second resistor and a third resistor; wherein: The input end of the operational amplifier is connected to the reference voltage core circuit; the first power pin of the operational amplifier is connected to the output end of the pre-voltage regulator circuit; the second power pin of the operational amplifier is grounded, the output end of the operational amplifier is connected to the gate of the third N-channel metal oxide semiconductor tube, the drain of the third N-channel metal oxide semiconductor tube is connected to the output end of the pre-voltage regulator circuit, the source of the third N-channel metal oxide semiconductor tube is connected to one end of the second resistor, and the other end of the second resistor is respectively connected to one end of the third resistor and the input end of the operational amplifier; The other end of the third resistor is grounded, and the source of the third N-channel metal oxide semiconductor transistor is also connected to the high-frequency filtering module.

11. The bandgap reference generating circuit according to claim 10, characterized in that: The bandgap reference generation circuit also includes: A second capacitor and a seventh resistor; one end of the second resistor is connected to the high-frequency filter module, and the other end of the second resistor is grounded; One end of the seventh resistor is connected to the high-frequency filtering module, and the other end of the seventh resistor is grounded.

12. An electronic device, characterized in that: The invention comprises a bandgap reference generating circuit as claimed in any one of claims 1 to 11.

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