Breakdown voltage simulation method and device of device, electronic equipment and storage medium

Abstract

The invention provides a breakdown voltage simulation method and device of a device, electronic equipment and a storage medium. The method comprises the steps of obtaining scanning voltage and device parameters of a target device, determining a collision ionization integral of the target device according to the scanning voltage and the device parameters, and determining target breakdown voltage of the target device according to the collision ionization integral. The simulation current of the target device does not need to be solved by using an equation set formed by a Poisson equation, an electron transport equation and a hole transport equation, the collision ionization integral of the target device only needs to be solved by using the Poisson equation, and then the target breakdown voltage of the target device is determined according to the collision ionization integral. Complex simulation current solving is simplified into simple collision ionization integral solving, the simulation convergence of breakdown voltage simulation of the device is remarkably improved, the breakdown voltage simulation speed of the device is higher, and the breakdown voltage simulation efficiency of the device is higher.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a method, device, electronic equipment and storage medium for simulating the breakdown voltage of a device. Background Art

[0002] When simulating the breakdown voltage of a device, it is first necessary to perform device simulation to obtain a simulated device, then solve the simulated current of the simulated device based on the scanned voltage and device parameters of the simulated device, and finally determine the breakdown voltage of the simulated device based on the voltage-current curve generated by the simulated voltage and the simulated current.

[0003] To solve the simulation current based on the scan voltage and device parameters, it is necessary to substitute the scan voltage and device parameters into the system of equations consisting of the Poisson equation, the electron transport equation, and the hole transport equation to solve the simulation current. However, if the carrier concentration in some areas of the device is very low, the simulation current of the device will be very small, and it is difficult to solve the current density in this area, resulting in poor simulation convergence; in addition, if the device has a very low carrier concentration in some areas, the grid parameter setting in the device simulation stage is unreasonable or the device structure is complex, and the corresponding device parameters are more, which will also lead to the problem of poor simulation convergence in the device breakdown voltage simulation. Therefore, how to improve the convergence of the device breakdown voltage simulation is an urgent problem to be solved. Summary of the invention

[0004] The present invention provides a device breakdown voltage simulation method, device, electronic equipment and storage medium, which can solve the problem of poor convergence of the device breakdown voltage simulation.

[0005] According to a first aspect of the present invention, a method for simulating breakdown voltage of a device is provided, the method comprising:

[0006] Obtaining scan voltage and device parameters of the target device;

[0007] Determining the impact ionization integral of the target device according to the scan voltage and the device parameters;

[0008] A target breakdown voltage of the target device is determined according to the impact ionization integral.

[0009] According to a second aspect of the present invention, a device for simulating breakdown voltage of a device is provided, the device comprising:

[0010] A parameter acquisition module, used to acquire the scanning voltage and device parameters of the target device;

[0011] A first determination module, configured to determine the impact ionization integral of the target device according to the scan voltage and the device parameters;

[0012] The second determination module is used to determine a target breakdown voltage of the target device according to the impact ionization integral.

[0013] According to a third aspect of the present invention, there is provided an electronic device, comprising a processor and a memory.

[0014] The memory is used to store codes and related data;

[0015] The processor is used to execute the code in the memory to implement the device breakdown voltage simulation method as described in any one of the embodiments of the present invention.

[0016] According to a fourth aspect of the present invention, there is provided a storage medium on which a computer program is stored. When the program is executed by a processor, the method for simulating the breakdown voltage of a device as described in any one of the embodiments of the present invention is implemented.

[0017] In an embodiment of the present invention, the scanning voltage and device parameters of the target device are obtained, and the collision ionization integral of the target device is determined according to the scanning voltage and the device parameters, and the target breakdown voltage of the target device is determined according to the collision ionization integral. That is, there is no need to use the equation group consisting of the Poisson equation, the electron transport equation and the hole transport equation to solve the simulation current of the target device. It is only necessary to use the Poisson equation to solve the collision ionization integral of the target device, and then determine the target breakdown voltage of the target device according to the collision ionization integral, simplifying the complex simulation current solution to the simple collision ionization integral solution, significantly improving the simulation convergence of the device breakdown voltage simulation, making the device breakdown voltage simulation speed faster and the device breakdown voltage simulation efficiency higher. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 It is a schematic flow chart of a method for simulating the breakdown voltage of a device provided by an embodiment of the present invention;

[0020] Figure 2 is another schematic flow chart of a method for simulating the breakdown voltage of a device provided in an embodiment of the present invention;

[0021] Figure 3 is a schematic diagram of an integrated voltage curve of a device provided by an embodiment of the present invention;

[0022] Figure 4It is a structural schematic diagram of a breakdown voltage simulation device of a device provided by an embodiment of the present invention;

[0023] Figure 5 It is a schematic diagram of the structure of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0026] The technical solution of the present invention is described in detail with specific embodiments below. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0027] Figure 1 The present invention provides a flowchart of a method for simulating the breakdown voltage of a device provided in an embodiment of the present invention. The method can be performed by a device for simulating the breakdown voltage of a device, and the device can be implemented in software and / or hardware. In a specific embodiment, the device can be integrated in an electronic device, such as a computer, a server, etc. The following embodiments will be described by taking the device integrated in an electronic device as an example, and refer to Figure 1 , the method may specifically include the following steps:

[0028] Step 101, obtaining the scan voltage and device parameters of the target device.

[0029] Among them, the device can be understood as a simulated semiconductor device obtained by using simulation software to simulate the device. For example, the simulated semiconductor device can be a simulated PN junction (PN junction) or a laterally diffused metal oxide semiconductor (Laterally Diffused Metal Oxide Semiconductor, LDMOS). The target device is the device to be simulated for breakdown voltage. If the target device is a PN junction, the P region of the PN junction is negative and the N region is positive. If the target device is an LDMOS, the source voltage, gate voltage and substrate voltage are 0V, and the drain voltage is between 0V and the power supply voltage.

[0030] In this embodiment, the scanning voltage can be understood as the voltage applied to the target device each time, such as the test voltage applied to the target device during device simulation testing. Device parameters are various parameters, classification values ​​and quality indicators used to describe the electrical performance indicators of semiconductor devices. Device parameters may include but are not limited to one or more of potential, ferroelectric polarization, elementary charge, ionized donor concentration, ionized acceptor concentration, charge density contributed by traps and fixed charges, etc.

[0031] Step 102: determining the impact ionization integral of the target device according to the scan voltage and the device parameters.

[0032] Among them, impact ionization can be understood as the process in which valence electrons in a molecule or atom are released and become positive ions when photons, electrons, or ions with sufficient energy hit a molecule or atom. Impact ionization integral can be understood as the probability of an electron being ionized when it is hit by another electron or atom during the collision process.

[0033] In an optional implementation, the total space charge density may be determined based on the scan voltage and device parameters, and the impact ionization integral of the target device may be determined based on the total space charge density.

[0034] Among them, the total space charge density can be understood as the sum of the electron density and the hole density.

[0035] In one embodiment, determining the total space charge density based on the scanning voltage and device parameters may include: determining the potential of the target device based on the scanning voltage; substituting the potential, ferroelectric polarization, elementary charge, ionized donor concentration, ionized acceptor concentration, and charge density contributed by traps and fixed charges into a charge density calculation model to obtain the total space charge density of the target device.

[0036] The charge density calculation model may be Poisson's equation.

[0037] In a specific embodiment, the charge density calculation model is as follows:

[0038]

[0039] in, represents the second-order derivative of the electric potential, ε represents the electrical permittivity, represents the electric potential, P represents the ferroelectric polarization, q represents the elementary charge, p represents the hole density, n represents the electron density, ND represents the ionized donor concentration, NA represents the ionized acceptor concentration, and ρtrap represents the charge density contributed by the trapped and fixed charges.

[0040] Specifically, the sum of the electron density and the hole density of the target device is calculated by the charge density calculation model, and then the sum of the densities is used as the total space charge density of the target device.

[0041] In one embodiment, determining the impact ionization integral of the target device according to the total space charge density may include: integrating and solving the total space charge density to obtain the impact ionization integral of the target device.

[0042] Specifically, the total space charge density can be substituted into the impact ionization integral calculation formula to obtain the impact ionization integral of the target device.

[0043] The collision ionization integral calculation formula is:

[0044]

[0045] Where I represents the impact ionization integral, x represents the depletion region width of the target device, and E represents the total space charge density.

[0046] Step 103: determining a target breakdown voltage of a target device according to the impact ionization integral.

[0047] The target breakdown voltage may be understood as a voltage at which the dielectric of the target device loses its dielectric properties and becomes a conductor.

[0048] When the collision ionization integral is greater than the preset value, it indicates that the device has undergone avalanche breakdown. When the device undergoes avalanche breakdown, the voltage applied to the device is the breakdown voltage of the device. Therefore, when the collision ionization integral of the target device is greater than the preset value, the obtained device's pending breakdown voltage can be determined as the device's breakdown voltage. However, when it is actually determined that the collision ionization integral is greater than the preset value, the obtained scanning voltage of the device may have a certain error with the accurate breakdown voltage of the device. Therefore, when it is determined that the collision ionization integral is greater than the preset value, the obtained scanning voltage can be determined as the pending breakdown voltage, and it can be determined whether the pending breakdown voltage is within the device's breakdown voltage range. If the pending breakdown voltage is within the device's breakdown voltage range, it means that the pending breakdown voltage meets the accuracy requirement of the device's breakdown voltage, and the obtained pending breakdown voltage is determined as the target breakdown voltage of the target device. If the to-be-determined breakdown voltage is not within the breakdown voltage range of the device, it means that the to-be-determined breakdown voltage does not meet the accuracy requirements of the breakdown voltage of the device. Then, the process parameters of the target device can be adjusted to update the device parameters of the target device, and the collision ionization integral of the target device can be determined again until the to-be-determined breakdown voltage is within the breakdown voltage range of the device. The to-be-determined breakdown voltage is determined as the target breakdown voltage of the device to ensure the accuracy of the breakdown voltage. The to-be-determined breakdown voltage can be understood as the scanning voltage of the target device when the collision ionization integral is greater than the preset value. The preset value can be understood as the critical value of the preset collision ionization integral.

[0049] Therefore, in an optional embodiment, it can be determined whether the collision ionization integral is greater than or equal to a preset value; when the collision ionization integral is less than the preset value, the voltage step length is obtained; based on the voltage step length, the scanning voltage is adjusted, and based on the adjusted scanning voltage and device parameters, the collision ionization integral of the target device is determined until the collision ionization integral is greater than or equal to the preset value. When the collision ionization integral is greater than or equal to the preset value, the scanning voltage is determined to be a pending breakdown voltage; it is determined whether the pending breakdown voltage is within a preset voltage interval; when the pending breakdown voltage is within the preset voltage interval, the pending breakdown voltage is determined as the target breakdown voltage of the target device, the preset voltage interval includes a first voltage and a second voltage, and the first voltage is less than the second voltage; when the pending breakdown voltage is not within the preset voltage interval, the process parameters of the target device are adjusted according to the pending breakdown voltage, the first voltage, and the second voltage to update the device parameters, and the collision ionization integral of the target device is determined according to the pending breakdown voltage and the updated device parameters.

[0050] Among them, the preset voltage interval can be understood as a preset breakdown voltage interval of the target device. The preset voltage interval may include a first voltage and a second voltage, and the first voltage is less than the second voltage. The first voltage can be understood as the minimum breakdown voltage of the target device. The second voltage can be understood as the maximum breakdown voltage. Process parameters are important parameters for measuring the quality of semiconductor device manufacturing process, and process parameters may include but are not limited to one or more of the doping concentration of the target atom, doping energy, substrate, annealing temperature, etc.

[0051] In one embodiment, the preset value may be 1. Specifically, for most devices, when the impact ionization integral is greater than or equal to 1, it indicates that an avalanche breakdown has occurred in the device.

[0052] In other embodiments, the preset value may also be other values, and this application does not limit this.

[0053] In one embodiment, adjusting the scanning voltage based on the voltage step size may include: when the voltage step size is greater than or equal to a preset step size threshold, obtaining a voltage step size update coefficient, and obtaining an updated voltage step size based on the voltage step size update coefficient and the voltage step size; and then obtaining an adjusted scanning voltage based on the scanning voltage and the updated voltage step size.

[0054] The voltage step size is the increment of the scan voltage change of the target device during the breakdown voltage simulation process. The preset step size threshold is the critical value of the preset voltage step size. The voltage step size update coefficient can be a preset coefficient used to adjust the voltage step size.

[0055] Specifically, the updated voltage step length may be obtained by multiplying the voltage step length update coefficient and the voltage step length; and then the updated voltage step length and the scan voltage are added to obtain the adjusted scan voltage.

[0056] In other embodiments, a corresponding relationship between the voltage step length and the voltage step length update coefficient may be pre-established to form a data table. When updating the voltage step length, the corresponding voltage step length is obtained from the data table through the voltage step length update coefficient, and then the previous voltage step length is replaced with the obtained voltage step length to achieve the update of the voltage step length.

[0057] In another embodiment, different voltage step length update coefficients may correspond to different voltage step length increments. The corresponding voltage step length increment may be obtained according to the voltage step length update coefficient, and then the voltage step length increment may be added to the voltage step length to update the voltage step length to obtain an updated voltage step length.

[0058] In this embodiment, the process parameters of the target device are adjusted according to the pending breakdown voltage, the first voltage and the second voltage. The size of the pending breakdown voltage can be judged according to the first voltage and the second voltage, thereby more efficiently determining how to adjust the process parameters of the target device to update the device parameters of the target device and improve the breakdown voltage simulation efficiency of the device.

[0059] In one embodiment, the process parameters may include the doping concentration of the target atoms, and adjusting the process parameters of the target device according to the to-be-determined breakdown voltage, the first voltage, and the second voltage may include: when the to-be-determined breakdown voltage is less than the first voltage, reducing the doping concentration of the target atoms, that is, when the determined breakdown voltage is too small, reducing the doping concentration of the target atoms to expand the depletion region of the target device and increase the to-be-determined breakdown voltage determined when the next collision ionization integral is greater than or equal to a preset value; when the to-be-determined breakdown voltage is greater than the second voltage, increasing the doping concentration of the target atoms, that is, when the determined breakdown voltage is too large, increasing the doping concentration of the target atoms to shrink the depletion region of the target device and reduce the to-be-determined breakdown voltage determined when the next collision ionization integral is greater than or equal to the preset value; by increasing or decreasing the to-be-determined breakdown voltage determined when the next collision ionization integral is greater than or equal to the preset value, the convergence speed of the to-be-determined breakdown voltage to the preset voltage range is accelerated, thereby improving the convergence of the device's breakdown voltage simulation.

[0060] By way of example, the target device may be a PN junction, and the target atom may be a phosphorus atom.

[0061] In this embodiment, when the to-be-determined breakdown voltage is less than the first voltage, the doping concentration of phosphorus atoms can be reduced, that is, when the determined to-be-determined breakdown voltage is too small, the doping concentration of phosphorus atoms can be reduced to expand the depletion region of the target device and increase the to-be-determined breakdown voltage determined when the next collision ionization integral is greater than or equal to a preset value; when the to-be-determined breakdown voltage is greater than the second voltage, the doping concentration of phosphorus atoms can be increased, that is, when the determined to-be-determined breakdown voltage is too large, the doping concentration of phosphorus atoms can be increased to shrink the depletion region of the target device and reduce the to-be-determined breakdown voltage determined when the next collision ionization integral is greater than or equal to a preset value; by increasing or decreasing the to-be-determined breakdown voltage determined when the next collision ionization integral is greater than or equal to a preset value, the convergence speed of the to-be-determined breakdown voltage to the preset voltage range is accelerated, thereby improving the convergence of the device's breakdown voltage simulation.

[0062] In another embodiment, the process parameters may also include the doping energy of the target atoms. Adjusting the process parameters of the target device according to the pending breakdown voltage, the first voltage and the second voltage may include: when the pending breakdown voltage is less than the first voltage, increasing the doping energy of the target atoms, that is, when the determined pending breakdown voltage is too small, increasing the doping energy of the target atoms to increase the pending breakdown voltage determined when the next collision ionization integral is greater than a preset value; when the pending breakdown voltage is greater than the second voltage, reducing the doping energy of the target atoms, that is, when the determined pending breakdown voltage is too large, reducing the doping energy of the target atoms to increase the pending breakdown voltage determined when the next collision ionization integral is greater than a preset value; by increasing or decreasing the pending breakdown voltage determined when the next collision ionization integral is greater than the preset value, the convergence speed of the pending breakdown voltage to the preset voltage range is accelerated, thereby improving the convergence of the device's breakdown voltage simulation.

[0063] For example, the target device may be a PN junction, and the target atom may be a phosphorus atom. When the to-be-determined breakdown voltage is less than the first voltage, the doping energy of the phosphorus atom is increased, that is, when the determined breakdown voltage is too small, the doping energy of the phosphorus atom is increased to increase the to-be-determined breakdown voltage determined when the next impact ionization integral is greater than a preset value; when the to-be-determined breakdown voltage is greater than the second voltage, the doping energy of the phosphorus atom is reduced, that is, when the determined breakdown voltage is too large, the doping energy of the phosphorus atom is reduced to increase the to-be-determined breakdown voltage determined when the next impact ionization integral is greater than a preset value; by increasing or decreasing the to-be-determined breakdown voltage determined when the next impact ionization integral is greater than a preset value, the convergence speed of the to-be-determined breakdown voltage converging to the preset voltage interval is accelerated, thereby improving the convergence of the breakdown voltage simulation of the device.

[0064] In other embodiments, other process parameters may also be adjusted to accelerate the convergence speed of the pending breakdown voltage to a preset voltage range, thereby improving the convergence of the breakdown voltage simulation of the device.

[0065] When the target device is LDMOS, the specific method of adjusting the process parameters of the target device according to the to-be-determined breakdown voltage, the first voltage and the second voltage is the same as the method of adjusting the process parameters when the target device is a PN junction, and will not be repeated here.

[0066] In other embodiments, the target atom may also include other atoms, which is not limited in this application.

[0067] In an embodiment of the present invention, the scanning voltage and device parameters of the target device are obtained, and the collision ionization integral of the target device is determined according to the scanning voltage and the device parameters, and the target breakdown voltage of the target device is determined according to the collision ionization integral. That is, there is no need to use the equation group consisting of the Poisson equation, the electron transport equation and the hole transport equation to solve the simulation current of the target device. It is only necessary to use the Poisson equation to solve the collision ionization integral of the target device, and then determine the target breakdown voltage of the target device according to the collision ionization integral, simplifying the complex simulation current solution to the simple collision ionization integral solution, significantly improving the simulation convergence of the device breakdown voltage simulation, making the device breakdown voltage simulation speed faster and the device breakdown voltage simulation efficiency higher.

[0068] The following further describes the device breakdown voltage simulation method provided by the embodiment of the present invention. Figure 2 As shown, Figure 2 FIG. 4 is another flow chart of a method for simulating the breakdown voltage of a device provided by an embodiment of the present invention, which may specifically include the following steps:

[0069] Step 201, obtaining the scan voltage and device parameters of the target device.

[0070] Step 202, determining the total space charge density according to the scan voltage and device parameters.

[0071] Step 203: determining the impact ionization integral of the target device according to the total space charge density.

[0072] Step 204 , determining whether the collision ionization integral is greater than or equal to a preset value, if so, executing step 205 ; if not, executing step 209 .

[0073] Step 205, determining that the scan voltage is the to-be-determined breakdown voltage.

[0074] Step 206, determine whether the to-be-determined breakdown voltage is within a preset voltage range, if so, execute step 207; if not, execute step 208.

[0075] Step 207: determine the to-be-determined breakdown voltage as the target breakdown voltage of the target device.

[0076] For example, the target device is a PN junction, the preset voltage interval is [V1, V2], the preset value is 1, wherein V1 is the first voltage and V2 is the second voltage. Figure 3 is the integrated voltage curve generated based on the impact ionization integration and scanning voltage of the PN junction, Figure 3It can be seen that when the impact ionization integral is greater than 1, the breakdown voltage simulation of the PN junction stops. At this time, the scanning voltage (1198V) when the impact ionization integral is greater than 1 can be determined as the pending breakdown voltage. If V1≤1198V≤V2, the pending breakdown voltage (1198V) can be determined as the target breakdown voltage of the PN junction.

[0077] Step 208 , adjusting the process parameters of the target device according to the to-be-determined breakdown voltage, the first voltage, and the second voltage to update the device parameters, and determining the impact ionization integral of the target device according to the to-be-determined breakdown voltage and the updated device parameters.

[0078] Step 209, obtaining the voltage step length.

[0079] Step 210 , adjusting the scan voltage based on the voltage step length, and determining the impact ionization integral of the target device based on the adjusted scan voltage and device parameters, until the impact ionization integral is greater than or equal to a preset value.

[0080] In an embodiment of the present invention, the scanning voltage and device parameters of the target device are obtained, and the collision ionization integral of the target device is determined according to the scanning voltage and the device parameters, and the target breakdown voltage of the target device is determined according to the collision ionization integral. That is, there is no need to use the equation group consisting of the Poisson equation, the electron transport equation and the hole transport equation to solve the simulation current of the target device. It is only necessary to use the Poisson equation to solve the collision ionization integral of the target device, and then determine the target breakdown voltage of the target device according to the collision ionization integral, simplifying the complex simulation current solution to the simple collision ionization integral solution, significantly improving the simulation convergence of the device breakdown voltage simulation, making the device breakdown voltage simulation speed faster and the device breakdown voltage simulation efficiency higher.

[0081] Figure 4 1 is a schematic diagram of a structure of a device for simulating the breakdown voltage of a device provided in an embodiment of the present invention. The device is suitable for executing a method for simulating the breakdown voltage of a device provided in an embodiment of the present invention. Figure 4 As shown, the device may specifically include:

[0082] The parameter acquisition module 301 is used to acquire the scanning voltage and device parameters of the target device;

[0083] A first determination module 302, configured to determine the impact ionization integral of the target device according to the scan voltage and the device parameters;

[0084] The second determination module 303 is configured to determine a target breakdown voltage of the target device according to the impact ionization integral.

[0085] Optionally, the first determining module 302 is specifically configured to:

[0086] Determining a total space charge density according to the scan voltage and the device parameters;

[0087] The impact ionization integral of the target device is determined according to the total space charge density.

[0088] Optionally, the device parameters include potential, ferroelectric polarization, elementary charge, ionized donor concentration, ionized acceptor concentration, and charge density contributed by traps and fixed charges; the first determination module 302 determines the total space charge density according to the scan voltage and the device parameters, including:

[0089] determining the potential of the target device according to the scan voltage;

[0090] Substituting the potential, the ferroelectric polarization, the elementary charge, the ionized donor concentration, the ionized acceptor concentration, and the charge density contributed by traps and fixed charges into a charge density calculation model to obtain the total space charge density of the target device;

[0091] The charge density calculation model is as follows:

[0092]

[0093] in, represents the second-order derivative of the electric potential, ε represents the electrical permittivity, represents the electric potential, P represents the ferroelectric polarization, q represents the elementary charge, p represents the hole density, n represents the electron density, ND represents the ionized donor concentration, NA represents the ionized acceptor concentration, and ρtrap represents the charge density contributed by the trapped and fixed charges.

[0094] Optionally, the second determining module 302 is specifically configured to:

[0095] Determining whether the collision ionization integral is greater than or equal to a preset value;

[0096] When the impact ionization integral is less than a preset value, obtaining a voltage step length;

[0097] The scanning voltage is adjusted based on the voltage step length, and the impact ionization integral of the target device is determined based on the adjusted scanning voltage and the device parameter until the impact ionization integral is greater than or equal to the preset value.

[0098] Optionally, the second determining module 303 is further specifically configured to:

[0099] When the impact ionization integral is greater than or equal to a preset value, determining that the scanning voltage is a to-be-determined breakdown voltage;

[0100] Determining whether the to-be-determined breakdown voltage is within a preset voltage range;

[0101] When the to-be-determined breakdown voltage is within a preset voltage interval, determining the to-be-determined breakdown voltage as a target breakdown voltage of the target device, the preset voltage interval includes a first voltage and a second voltage, the first voltage being less than the second voltage;

[0102] When the to-be-determined breakdown voltage is not within the preset voltage interval, the process parameters of the target device are adjusted according to the to-be-determined breakdown voltage, the first voltage, and the second voltage to update the device parameters, and the impact ionization integral of the target device is determined according to the to-be-determined breakdown voltage and the updated device parameters.

[0103] Optionally, the process parameters include a doping concentration of a target atom, and adjusting the process parameters of the target device according to the to-be-determined breakdown voltage, the first voltage, and the second voltage includes:

[0104] When the to-be-determined breakdown voltage is less than the first voltage, reducing the doping concentration of the target atoms;

[0105] When the to-be-determined breakdown voltage is greater than the second voltage, the doping concentration of the target atoms is increased.

[0106] Optionally, the process parameters include doping energy of target atoms, and adjusting the process parameters of the target device according to the to-be-determined breakdown voltage, the first voltage, and the second voltage includes:

[0107] When the to-be-determined breakdown voltage is less than the first voltage, increasing the doping energy of the target atoms;

[0108] When the to-be-determined breakdown voltage is greater than the second voltage, the doping energy of the target atoms is reduced.

[0109] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional modules is used as an example for illustration. In actual applications, the above-mentioned functions can be assigned to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. The specific working process of the functional modules described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0110] The device breakdown voltage simulation apparatus provided by the embodiment of the present invention can obtain the scanning voltage and device parameters of the target device, determine the collision ionization integral of the target device according to the scanning voltage and the device parameters, and determine the target breakdown voltage of the target device according to the collision ionization integral. That is, there is no need to use the equation group consisting of the Poisson equation, the electron transport equation and the hole transport equation to solve the simulation current of the target device. It is only necessary to use the Poisson equation to solve the collision ionization integral of the target device, and then determine the target breakdown voltage of the target device according to the collision ionization integral. The complex simulation current solution is simplified to the simple collision ionization integral solution, which significantly improves the simulation convergence of the device breakdown voltage simulation, making the device breakdown voltage simulation faster and more efficient.

[0111] In one embodiment, an electronic device is provided, which may be a server. Figure 5 It is a schematic diagram of the structure of an electronic device provided by an embodiment of the present invention.

[0112] Please refer to Figure 5 , an electronic device 50 is provided, comprising:

[0113] a processor 51; and

[0114] A memory 52, used to store executable instructions of the processor;

[0115] The processor 51 is configured to execute the above-mentioned method by executing the executable instructions.

[0116] The processor 51 can communicate with the memory 52 via a bus 53 .

[0117] The processor of the electronic device is used to provide computing and control capabilities. The memory of the electronic device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a program and a database. The internal memory provides an environment for the operation of the operating system and the program in the non-volatile storage medium. The database of the electronic device is used to store data such as the scanning voltage, device parameters, collision ionization integral and target breakdown voltage of the target device. When the program is executed by the processor, the breakdown voltage simulation method of the above-mentioned device is implemented.

[0118] An embodiment of the present invention further provides a computer-readable storage medium on which a computer program is stored. When the program is executed by a processor, the above-mentioned method is implemented.

[0119] Those of ordinary skill in the art can understand that the implementation of all or part of the processes in the above-mentioned embodiment method can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0120] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for simulating the breakdown voltage of a device, characterized in that: The method comprises: Obtaining scan voltage and device parameters of the target device; Determining the impact ionization integral of the target device according to the scan voltage and the device parameters; A target breakdown voltage of the target device is determined according to the impact ionization integral.

2. The method according to claim 1, characterized in that Determining the impact ionization integral of the target device according to the scanning voltage and the device parameter includes: Determining a total space charge density according to the scan voltage and the device parameters; The impact ionization integral of the target device is determined according to the total space charge density.

3. The method according to claim 2, characterized in that The device parameters include potential, ferroelectric polarization, elementary charge, ionized donor concentration, ionized acceptor concentration, and charge density contributed by traps and fixed charges; the total space charge density is determined according to the scan voltage and the device parameters, including: determining the potential of the target device according to the scan voltage; Substituting the potential, the ferroelectric polarization, the elementary charge, the ionized donor concentration, the ionized acceptor concentration, and the charge density contributed by traps and fixed charges into a charge density calculation model to obtain the total space charge density of the target device; The charge density calculation model is as follows: in, represents the second-order derivative of the electric potential, ε represents the electrical permittivity, represents the electric potential, P represents the ferroelectric polarization, q represents the elementary charge, p represents the hole density, n represents the electron density, ND represents the ionized donor concentration, NA represents the ionized acceptor concentration, and ρtrap represents the charge density contributed by the trapped and fixed charges.

4. The method according to claim 1, characterized in that: Determining a target breakdown voltage of the target device according to the impact ionization integral includes: Determining whether the collision ionization integral is greater than or equal to a preset value; When the collision ionization integral is less than a preset value, obtaining a voltage step length; The scanning voltage is adjusted based on the voltage step length, and the impact ionization integral of the target device is determined based on the adjusted scanning voltage and the device parameter until the impact ionization integral is greater than or equal to the preset value.

5. The method according to claim 4, characterized in that Determining a target breakdown voltage of the target device according to the impact ionization integral further includes: When the impact ionization integral is greater than or equal to a preset value, determining that the scanning voltage is a to-be-determined breakdown voltage; Determining whether the to-be-determined breakdown voltage is within a preset voltage range; When the to-be-determined breakdown voltage is within a preset voltage interval, determining the to-be-determined breakdown voltage as a target breakdown voltage of the target device, the preset voltage interval includes a first voltage and a second voltage, the first voltage being less than the second voltage; When the to-be-determined breakdown voltage is not within the preset voltage interval, the process parameters of the target device are adjusted according to the to-be-determined breakdown voltage, the first voltage, and the second voltage to update the device parameters, and the impact ionization integral of the target device is determined according to the to-be-determined breakdown voltage and the updated device parameters.

6. The method according to claim 5, characterized in that The process parameters include a doping concentration of a target atom, and the process parameters of the target device are adjusted according to the to-be-determined breakdown voltage, the first voltage, and the second voltage, including: When the to-be-determined breakdown voltage is less than the first voltage, reducing the doping concentration of the target atoms; When the to-be-determined breakdown voltage is greater than the second voltage, the doping concentration of the target atoms is increased.

7. The method according to claim 5, characterized in that The process parameters include doping energy of target atoms, and adjusting the process parameters of the target device according to the to-be-determined breakdown voltage, the first voltage, and the second voltage includes: When the to-be-determined breakdown voltage is less than the first voltage, increasing the doping energy of the target atoms; When the to-be-determined breakdown voltage is greater than the second voltage, the doping energy of the target atoms is reduced.

8. A device for simulating breakdown voltage of a device, characterized in that: The device comprises: A parameter acquisition module, used to acquire the scanning voltage and device parameters of the target device; A first determination module, configured to determine the impact ionization integral of the target device according to the scan voltage and the device parameters; The second determination module is used to determine a target breakdown voltage of the target device according to the impact ionization integral.

9. An electronic device, characterized in that: Including processor and memory, The memory is used to store codes and related data; The processor is used to execute the code in the memory to implement the breakdown voltage simulation method of the device according to any one of claims 1 to 7.

10. A storage medium having a computer program stored thereon, wherein when the program is executed by a processor, the method for simulating the breakdown voltage of a device according to any one of claims 1 to 7 is implemented.

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