Device breakdown voltage simulation method and device, electronic equipment and storage medium

Abstract

The application provides a device breakdown voltage simulation method and device, electronic equipment and storage medium, the method comprises the following steps: obtaining the scanning voltage and device parameters of the target device, determining the collision ionization integral of the target device according to the scanning voltage and device parameters, and determining the target breakdown voltage of the target device according to the collision ionization integral. That is, without using the equation group composed of Poisson equation, electron transport equation and hole transport equation to solve the simulation current of the target device, only the collision ionization integral of the target device is solved by using the Poisson equation, and then the target breakdown voltage of the target device is determined according to the collision ionization integral. The complex simulation current solving is simplified to the solving of the simple collision ionization integral, the simulation convergence of the device breakdown voltage simulation is significantly improved, the device breakdown voltage simulation speed is faster, and the device breakdown voltage simulation efficiency is higher.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method, apparatus, electronic device, and storage medium for simulating the breakdown voltage of a device. Background Technology

[0002] When simulating the breakdown voltage of a device, the device must first be simulated to obtain the simulated device. Then, the simulated current of the simulated device is calculated based on the scanned voltage and device parameters. Finally, the breakdown voltage of the simulated device is determined based on the voltage-current curve generated by the simulated voltage and simulated current.

[0003] Solving for the simulated current based on the scanning voltage and device parameters requires substituting these parameters into a system of equations consisting of the Poisson equation, the electron transport equation, and the hole transport equation. However, if the carrier concentration is very low in certain regions of the device, the simulated current will be very small, making it difficult to calculate the current density in these regions and resulting in poor simulation convergence. Furthermore, if the device has very low carrier concentration in certain regions, improper mesh parameter settings during the device simulation stage, or a complex device structure with numerous parameters, this can also lead to poor convergence in the breakdown voltage simulation. Therefore, improving the convergence of device breakdown voltage simulation is a pressing issue that needs to be addressed. Summary of the Invention

[0004] This invention provides a method, apparatus, electronic device, and storage medium for simulating the breakdown voltage of a device, which can solve the problem of poor convergence in the simulation of device breakdown voltage.

[0005] According to a first aspect of the present invention, a method for simulating the breakdown voltage of a device is provided, the method comprising:

[0006] Obtain the scanning voltage and device parameters of the target device;

[0007] The collisional ionization integral of the target device is determined based on the scanning voltage and the device parameters.

[0008] The target breakdown voltage of the target device is determined based on the impact ionization integral.

[0009] According to a second aspect of the present invention, a device breakdown voltage simulation apparatus is provided, the apparatus comprising:

[0010] The parameter acquisition module is used to acquire the scanning voltage and device parameters of the target device.

[0011] The first determining module is used to determine the collision ionization integral of the target device based on the scanning voltage and the device parameters;

[0012] The second determining module is used to determine the target breakdown voltage of the target device based on the impact ionization integral.

[0013] According to a third aspect of the present invention, an electronic device is provided, comprising a processor and a memory.

[0014] The memory is used to store code and related data;

[0015] The processor is configured to execute code in the memory to implement a breakdown voltage simulation method for a device as described in any of the embodiments of the present invention.

[0016] According to a fourth aspect of the present invention, a storage medium is provided having a computer program stored thereon, which, when executed by a processor, implements a breakdown voltage simulation method for a device as described in any of the embodiments of the present invention.

[0017] In this embodiment of the invention, the scanning voltage and device parameters of the target device are obtained. Based on the scanning voltage and device parameters, the collisional ionization integral of the target device is determined. Based on the collisional ionization integral, the target breakdown voltage of the target device is determined. That is, it is not necessary to use a system of equations consisting of Poisson's equation, electron transport equation, and hole transport equation to solve for the simulated current of the target device. Only the collisional ionization integral of the target device needs to be solved using Poisson's equation, and then the target breakdown voltage of the target device is determined based on the collisional ionization integral. This simplifies the complex solution of the simulated current to the simple solution of the collisional ionization integral, which significantly improves the simulation convergence of the device breakdown voltage simulation, making the device breakdown voltage simulation faster and more efficient. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a flowchart illustrating a method for simulating the breakdown voltage of a device provided in an embodiment of the present invention.

[0020] Figure 2 This is another schematic flowchart of the device breakdown voltage simulation method provided in the embodiments of the present invention;

[0021] Figure 3 This is a schematic diagram of the integral voltage curve of the device provided in an embodiment of the present invention;

[0022] Figure 4This is a schematic diagram of a device breakdown voltage simulation apparatus provided in an embodiment of the present invention;

[0023] Figure 5 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0024] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0026] The technical solution of the present invention will be described in detail below with reference to specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0027] Figure 1 This is a flowchart illustrating a device breakdown voltage simulation method provided in an embodiment of the present invention. This method can be executed by a device breakdown voltage simulation device, which can be implemented using software and / or hardware. In a specific embodiment, the device can be integrated into an electronic device, such as a computer or server. The following embodiments will illustrate this using the integration of the device into an electronic device as an example. Figure 1 The method may specifically include the following steps:

[0028] Step 101: Obtain the scanning voltage and device parameters of the target device.

[0029] In this context, "device" can be understood as a simulated semiconductor device obtained through simulation software. For example, the simulated semiconductor device can be a simulated PN junction or a laterally diffused metal-oxide-semiconductor (LDMOS). The target device is the device whose breakdown voltage is to be simulated. If the target device is a PN junction, the P-region is negative and the N-region is positive. If the target device is an LDMOS, the source voltage, gate voltage, and substrate voltage are all 0V, and the drain voltage is between 0V and the power supply voltage.

[0030] In this embodiment, the scanning voltage can be understood as the voltage applied to the target device each time, such as the test voltage applied to the target device during device simulation testing. Device parameters are various parameters, classification values, and quality indicators used to describe the electrical performance indicators of semiconductor devices. Device parameters may include, but are not limited to, one or more of the following: potential, ferroelectric polarization, elementary charge, ionization donor concentration, ionization acceptor concentration, and charge density contributed by traps and fixed charges.

[0031] Step 102: Determine the collision ionization integral of the target device based on the scanning voltage and device parameters.

[0032] Collision ionization can be understood as the process by which a photon, electron, or ion with sufficiently high energy strikes a molecule or atom, causing the valence electrons in that molecule or atom to be released, thus becoming a positive ion. The collision ionization integral can be understood as the probability that an electron is ionized when it is struck by another electron or atom during a collision.

[0033] In one alternative implementation, the total space charge density can be determined based on the scanning voltage and device parameters, and the collisional ionization integral of the target device can be determined based on the total space charge density.

[0034] The total space charge density can be understood as the sum of electron density and hole density.

[0035] In one embodiment, determining the total space charge density based on the scanning voltage and device parameters may include: determining the potential of the target device based on the scanning voltage; and substituting the potential, ferroelectric polarization, elementary charge, ionized donor concentration, ionized acceptor concentration, and charge density contributed by traps and fixed charges into the charge density calculation model to obtain the total space charge density of the target device.

[0036] The charge density calculation model can be the Poisson equation.

[0037] In one specific embodiment, the charge density calculation model is as follows:

[0038]

[0039] in, The second derivative of the electric potential is represented by ε, and the dielectric constant is represented by ε. ρ represents electric potential, P represents ferroelectric polarization, q represents elementary charge, p represents hole density, n represents electron density, ND represents ionized donor concentration, NA represents ionized acceptor concentration, and ρtrap represents charge density contributed by traps and fixed charges.

[0040] Specifically, the sum of the electron density and hole density of the target device is calculated using a charge density calculation model, and then this sum is used as the total space charge density of the target device.

[0041] In one embodiment, determining the collisional ionization integral of the target device based on the total space charge density may include: integrating the total space charge density to obtain the collisional ionization integral of the target device.

[0042] Specifically, the total space charge density can be substituted into the formula for calculating the collisional ionization integral to obtain the collisional ionization integral of the target device.

[0043] The formula for calculating the collision ionization integral is:

[0044]

[0045] Where I represents the collisional ionization integral, x represents the depletion region width of the target device, and E represents the total space charge density.

[0046] Step 103: Determine the target breakdown voltage of the target device based on the collision ionization integral.

[0047] The target breakdown voltage can be understood as the voltage that causes the dielectric of the target device to lose its dielectric properties and become a conductor.

[0048] Since an avalanche breakdown occurs when the impact ionization integral exceeds a preset value, the voltage applied to the device during avalanche breakdown is its breakdown voltage. Therefore, when the impact ionization integral of the target device exceeds the preset value, the undetermined breakdown voltage can be determined as the device's breakdown voltage. However, in practice, the scanning voltage obtained when the impact ionization integral exceeds the preset value may have some error compared to the device's accurate breakdown voltage. Therefore, when the impact ionization integral exceeds the preset value, the obtained scanning voltage can be determined as the undetermined breakdown voltage. It is then determined whether the undetermined breakdown voltage falls within the device's breakdown voltage range. If it does, it indicates that the undetermined breakdown voltage meets the accuracy requirements of the device's breakdown voltage, and the obtained undetermined breakdown voltage is then determined as the target breakdown voltage of the target device. If the expected breakdown voltage is not within the device's breakdown voltage range, it indicates that the expected breakdown voltage does not meet the accuracy requirements of the device's breakdown voltage. In this case, the process parameters of the target device can be adjusted to update the device parameters, and the impact ionization integral of the target device can be re-determined until the expected breakdown voltage falls within the device's breakdown voltage range. The expected breakdown voltage is then determined as the target breakdown voltage of the device to ensure the accuracy of the breakdown voltage. The expected breakdown voltage can be understood as the scanning voltage of the target device when the impact ionization integral is greater than a preset value. The preset value can be understood as a preset critical value for the impact ionization integral.

[0049] Therefore, in one optional implementation, it can be determined whether the impact ionization integral is greater than or equal to a preset value; when the impact ionization integral is less than the preset value, a voltage step size is obtained; based on the voltage step size, the scanning voltage is adjusted, and based on the adjusted scanning voltage and device parameters, the impact ionization integral of the target device is determined until the impact ionization integral is greater than or equal to the preset value. When the impact ionization integral is greater than or equal to the preset value, the scanning voltage is determined as the undetermined breakdown voltage; it is determined whether the undetermined breakdown voltage is within a preset voltage range; when the undetermined breakdown voltage is within the preset voltage range, the undetermined breakdown voltage is determined as the target breakdown voltage of the target device, the preset voltage range includes a first voltage and a second voltage, the first voltage being less than the second voltage; when the undetermined breakdown voltage is not within the preset voltage range, the process parameters of the target device are adjusted according to the undetermined breakdown voltage, the first voltage, and the second voltage to update the device parameters, and the impact ionization integral of the target device is determined according to the undetermined breakdown voltage and the updated device parameters.

[0050] The preset voltage range can be understood as a preset breakdown voltage range for the target device. The preset voltage range may include a first voltage and a second voltage, where the first voltage is less than the second voltage. The first voltage can be understood as the minimum breakdown voltage of the target device. The second voltage can be understood as the maximum breakdown voltage. Process parameters are important parameters for measuring the quality of semiconductor device manufacturing processes. Process parameters may include, but are not limited to, one or more of the following: doping concentration of target atoms, doping energy, substrate, annealing temperature, etc.

[0051] In one embodiment, the preset value can be 1. Specifically, for most devices, an avalanche breakdown is indicated when the impact ionization integral is greater than or equal to 1.

[0052] In other embodiments, the preset value may be other values, and this application does not limit it.

[0053] In one embodiment, adjusting the scanning voltage based on the voltage step size may include: obtaining a voltage step size update coefficient when the voltage step size is greater than or equal to a preset step size threshold; obtaining an updated voltage step size based on the voltage step size update coefficient and the voltage step size; and then obtaining an adjusted scanning voltage based on the scanning voltage and the updated voltage step size.

[0054] Here, the voltage step size is the increment of the scanned voltage change during the breakdown voltage simulation of the target device. The preset step size threshold is the critical value of the preset voltage step size. The voltage step size update coefficient can be a pre-set coefficient used to adjust the voltage step size.

[0055] Specifically, the updated voltage step size can be obtained by multiplying the voltage step size update factor by the voltage step size; then the updated voltage step size can be added to the scan voltage to obtain the adjusted scan voltage.

[0056] In other embodiments, a correspondence between voltage step size and voltage step size update coefficient can be pre-established to form a data table. When updating the voltage step size, the corresponding voltage step size is obtained from the data table through the voltage step size update coefficient, and then the previous voltage step size is replaced with the obtained voltage step size to achieve the update of the voltage step size.

[0057] In another embodiment, different voltage step size update coefficients can correspond to different voltage step size increments. The corresponding voltage step size increment can be obtained based on the voltage step size update coefficient, and then the voltage step size increment is added to the voltage step size to update the voltage step size, thus obtaining the updated voltage step size.

[0058] In this embodiment, the process parameters of the target device are adjusted according to the unknown breakdown voltage, the first voltage, and the second voltage. The magnitude of the unknown breakdown voltage can be determined based on the first voltage and the second voltage, thereby more efficiently determining how to adjust the process parameters of the target device to update the device parameters and improve the simulation efficiency of the device's breakdown voltage.

[0059] In one embodiment, the process parameters may include the doping concentration of the target atoms. Adjusting the process parameters of the target device based on the undetermined breakdown voltage, a first voltage, and a second voltage may include: reducing the doping concentration of the target atoms when the undetermined breakdown voltage is less than the first voltage, i.e., reducing the doping concentration of the target atoms when the determined breakdown voltage is too small, to expand the depletion region of the target device and increase the undetermined breakdown voltage determined when the next collisional ionization integral is greater than or equal to a preset value; increasing the doping concentration of the target atoms when the undetermined breakdown voltage is greater than the second voltage, i.e., increasing the doping concentration of the target atoms when the determined breakdown voltage is too large, to shrink the depletion region of the target device and decrease the undetermined breakdown voltage determined when the next collisional ionization integral is greater than or equal to a preset value; by increasing or decreasing the undetermined breakdown voltage determined when the next collisional ionization integral is greater than or equal to a preset value, the convergence speed of the undetermined breakdown voltage converging to the preset voltage range is accelerated, thereby improving the convergence of the device breakdown voltage simulation.

[0060] For example, the target device can be a PN junction, and the target atom can be a phosphorus atom.

[0061] In this embodiment, when the undetermined breakdown voltage is less than a first voltage, the doping concentration of phosphorus atoms can be reduced. That is, when the determined undetermined breakdown voltage is too small, the doping concentration of phosphorus atoms is reduced to expand the depletion region of the target device and increase the undetermined breakdown voltage determined when the next collisional ionization integral is greater than or equal to a preset value. When the undetermined breakdown voltage is greater than a second voltage, the doping concentration of phosphorus atoms can be increased. That is, when the determined undetermined breakdown voltage is too large, the doping concentration of phosphorus atoms is increased to shrink the depletion region of the target device and decrease the undetermined breakdown voltage determined when the next collisional ionization integral is greater than or equal to a preset value. By increasing or decreasing the undetermined breakdown voltage determined when the next collisional ionization integral is greater than or equal to a preset value, the convergence speed of the undetermined breakdown voltage converging to the preset voltage range is accelerated, thereby improving the convergence of the device breakdown voltage simulation.

[0062] In another embodiment, the process parameters may further include the doping energy of the target atoms. Adjusting the process parameters of the target device based on the undetermined breakdown voltage, the first voltage, and the second voltage may include: increasing the doping energy of the target atoms when the undetermined breakdown voltage is less than the first voltage, i.e., increasing the doping energy of the target atoms when the determined undetermined breakdown voltage is too small, to increase the undetermined breakdown voltage determined when the next collisional ionization integral is greater than a preset value; decreasing the doping energy of the target atoms when the undetermined breakdown voltage is greater than the second voltage, i.e., decreasing the doping energy of the target atoms when the determined undetermined breakdown voltage is too large, to increase the undetermined breakdown voltage determined when the next collisional ionization integral is greater than a preset value; by increasing or decreasing the undetermined breakdown voltage determined when the next collisional ionization integral is greater than a preset value, the convergence speed of the undetermined breakdown voltage to the preset voltage range is accelerated, thereby improving the convergence of the device breakdown voltage simulation.

[0063] For example, the target device can be a PN junction, and the target atom can be a phosphorus atom. When the undetermined breakdown voltage is less than a first voltage, the doping energy of the phosphorus atom is increased. That is, when the determined breakdown voltage is too small, the doping energy of the phosphorus atom is increased to increase the undetermined breakdown voltage determined when the next collisional ionization integral is greater than a preset value. When the undetermined breakdown voltage is greater than a second voltage, the doping energy of the phosphorus atom is decreased. That is, when the determined breakdown voltage is too large, the doping energy of the phosphorus atom is decreased to increase the undetermined breakdown voltage determined when the next collisional ionization integral is greater than a preset value. By increasing or decreasing the undetermined breakdown voltage determined when the next collisional ionization integral is greater than a preset value, the convergence speed of the undetermined breakdown voltage to the preset voltage range is accelerated, thereby improving the convergence of the device breakdown voltage simulation.

[0064] In other embodiments, other process parameters can be adjusted to accelerate the convergence speed of the unknown breakdown voltage to a preset voltage range, thereby improving the convergence of the device breakdown voltage simulation.

[0065] When the target device is an LDMOS, the specific method for adjusting the process parameters of the target device based on the undetermined breakdown voltage, the first voltage, and the second voltage is the same as the method for adjusting the process parameters when the target device is a PN junction, and will not be repeated here.

[0066] In other embodiments, the target atom may also include other atoms, and this application does not limit this.

[0067] In this embodiment of the invention, the scanning voltage and device parameters of the target device are obtained. Based on the scanning voltage and device parameters, the collisional ionization integral of the target device is determined. Based on the collisional ionization integral, the target breakdown voltage of the target device is determined. That is, it is not necessary to use a system of equations consisting of Poisson's equation, electron transport equation, and hole transport equation to solve for the simulated current of the target device. Only the collisional ionization integral of the target device needs to be solved using Poisson's equation, and then the target breakdown voltage of the target device is determined based on the collisional ionization integral. This simplifies the complex solution of the simulated current to the simple solution of the collisional ionization integral, which significantly improves the simulation convergence of the device breakdown voltage simulation, making the device breakdown voltage simulation faster and more efficient.

[0068] The breakdown voltage simulation method for the device provided in the embodiments of the present invention is further described below, such as... Figure 2 As shown, Figure 2 This is another flowchart illustrating the device breakdown voltage simulation method provided in this embodiment of the invention, which may specifically include the following steps:

[0069] Step 201: Obtain the scanning voltage and device parameters of the target device.

[0070] Step 202: Determine the total space charge density based on the scanning voltage and device parameters.

[0071] Step 203: Determine the collisional ionization integral of the target device based on the total space charge density.

[0072] Step 204: Determine whether the collision ionization integral is greater than or equal to a preset value. If yes, proceed to step 205; otherwise, proceed to step 209.

[0073] Step 205: Determine the scanning voltage as the breakdown voltage to be determined.

[0074] Step 206: Determine whether the expected breakdown voltage is within the preset voltage range. If yes, proceed to step 207; otherwise, proceed to step 208.

[0075] Step 207: Determine the undetermined breakdown voltage as the target breakdown voltage of the target device.

[0076] For example, the target device is a PN junction, the preset voltage range is [V1, V2], and the preset value is 1, where V1 is the first voltage and V2 is the second voltage. Figure 3 The integral voltage curve is generated based on the collisional ionization integral and scanning voltage of the PN junction. Figure 3It can be seen that the simulation of the breakdown voltage of the PN junction stops when the collisional ionization integral is greater than 1. At this time, the scanning voltage (1198V) when the collisional ionization integral is greater than 1 can be determined as the breakdown voltage to be determined. If V1≤1198V≤V2, the breakdown voltage to be determined (1198V) can be determined as the target breakdown voltage of the PN junction.

[0077] Step 208: Adjust the process parameters of the target device according to the undetermined breakdown voltage, the first voltage, and the second voltage to update the device parameters, and determine the impact ionization integral of the target device according to the undetermined breakdown voltage and the updated device parameters.

[0078] Step 209: Obtain the voltage step size.

[0079] Step 210: Adjust the scanning voltage based on the voltage step size, and determine the collision ionization integral of the target device based on the adjusted scanning voltage and device parameters, until the collision ionization integral is greater than or equal to a preset value.

[0080] In this embodiment of the invention, the scanning voltage and device parameters of the target device are obtained. Based on the scanning voltage and device parameters, the collisional ionization integral of the target device is determined. Based on the collisional ionization integral, the target breakdown voltage of the target device is determined. That is, it is not necessary to use a system of equations consisting of Poisson's equation, electron transport equation, and hole transport equation to solve for the simulated current of the target device. Only the collisional ionization integral of the target device needs to be solved using Poisson's equation, and then the target breakdown voltage of the target device is determined based on the collisional ionization integral. This simplifies the complex solution of the simulated current to the simple solution of the collisional ionization integral, which significantly improves the simulation convergence of the device breakdown voltage simulation, making the device breakdown voltage simulation faster and more efficient.

[0081] Figure 4 This is a schematic diagram of a device breakdown voltage simulation apparatus provided in an embodiment of the present invention. This apparatus is suitable for executing the device breakdown voltage simulation method provided in an embodiment of the present invention. Figure 4 As shown, the device may specifically include:

[0082] The parameter acquisition module 301 is used to acquire the scanning voltage and device parameters of the target device;

[0083] The first determining module 302 is used to determine the collision ionization integral of the target device based on the scanning voltage and the device parameters;

[0084] The second determining module 303 is used to determine the target breakdown voltage of the target device based on the impact ionization integral.

[0085] Optionally, the first determining module 302 is specifically used for:

[0086] The total space charge density is determined based on the scanning voltage and the device parameters;

[0087] The collisional ionization integral of the target device is determined based on the total space charge density.

[0088] Optionally, the device parameters include potential, ferroelectric polarization, elementary charge, ionized donor concentration, ionized acceptor concentration, and charge density contributed by traps and fixed charges; the first determining module 302 determines the total space charge density based on the scanning voltage and the device parameters, including:

[0089] The potential of the target device is determined based on the scanning voltage;

[0090] Substituting the potential, the ferroelectric polarization, the elementary charge, the ionized donor concentration, the ionized acceptor concentration, and the charge density contributed by the trap and fixed charges into the charge density calculation model, the total space charge density of the target device is obtained.

[0091] The charge density calculation model is as follows:

[0092]

[0093] in, The second derivative of the electric potential is represented by ε, and the dielectric constant is represented by ε. ρ represents electric potential, P represents ferroelectric polarization, q represents elementary charge, p represents hole density, n represents electron density, ND represents ionized donor concentration, NA represents ionized acceptor concentration, and ρtrap represents charge density contributed by traps and fixed charges.

[0094] Optionally, the second determining module 302 is specifically used for:

[0095] Determine whether the collision ionization integral is greater than or equal to a preset value;

[0096] When the collision ionization integral is less than a preset value, the voltage step size is obtained;

[0097] Based on the voltage step size, the scanning voltage is adjusted, and based on the adjusted scanning voltage and the device parameters, the collision ionization integral of the target device is determined until the collision ionization integral is greater than or equal to the preset value.

[0098] Optionally, the second determining module 303 is further specifically used for:

[0099] When the collision ionization integral is greater than or equal to a preset value, the scanning voltage is determined to be the breakdown voltage to be determined.

[0100] Determine whether the undetermined breakdown voltage is within a preset voltage range;

[0101] When the undetermined breakdown voltage is within a preset voltage range, the undetermined breakdown voltage is determined as the target breakdown voltage of the target device. The preset voltage range includes a first voltage and a second voltage, wherein the first voltage is less than the second voltage.

[0102] When the undetermined breakdown voltage is not within the preset voltage range, the process parameters of the target device are adjusted according to the undetermined breakdown voltage, the first voltage, and the second voltage to update the device parameters, and the impact ionization integral of the target device is determined according to the undetermined breakdown voltage and the updated device parameters.

[0103] Optionally, the process parameters include the doping concentration of the target atoms, and adjusting the process parameters of the target device according to the undetermined breakdown voltage, the first voltage, and the second voltage includes:

[0104] When the expected breakdown voltage is less than the first voltage, the doping concentration of the target atom is reduced;

[0105] When the expected breakdown voltage is greater than the second voltage, the doping concentration of the target atom is increased.

[0106] Optionally, the process parameters include the doping energy of the target atoms, and adjusting the process parameters of the target device according to the undetermined breakdown voltage, the first voltage, and the second voltage includes:

[0107] When the expected breakdown voltage is less than the first voltage, the doping energy of the target atom is increased;

[0108] When the expected breakdown voltage is greater than the second voltage, the doping energy of the target atom is reduced.

[0109] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional modules is merely an example. In practical applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. The specific working process of the functional modules described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0110] The device breakdown voltage simulation apparatus provided in this invention can acquire the scanning voltage and device parameters of the target device, determine the collisional ionization integral of the target device based on the scanning voltage and device parameters, and determine the target breakdown voltage of the target device based on the collisional ionization integral. That is, it eliminates the need to use a system of equations consisting of Poisson's equation, electron transport equation, and hole transport equation to solve for the simulated current of the target device; it only requires using Poisson's equation to solve for the collisional ionization integral, and then determining the target breakdown voltage based on the collisional ionization integral. This simplifies the complex solution for the simulated current to the simple solution for the collisional ionization integral, significantly improving the simulation convergence of the device breakdown voltage simulation, resulting in faster simulation speed and higher simulation efficiency.

[0111] In one embodiment, an electronic device is provided, which may be a server. Figure 5 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention.

[0112] Please refer to Figure 5 An electronic device 50 is provided, comprising:

[0113] Processor 51; and,

[0114] Memory 52 is used to store the executable instructions of the processor;

[0115] The processor 51 is configured to execute the methods described above by executing the executable instructions.

[0116] The processor 51 can communicate with the memory 52 via the bus 53.

[0117] The processor of this electronic device provides computational and control capabilities. Its memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores the operating system, programs, and a database. The internal memory provides the environment for the operation of the operating system and programs in the non-volatile storage medium. The database stores data such as the target device's scan voltage, device parameters, impact ionization integral, and target breakdown voltage. When the processor executes the program, it implements a method for simulating the breakdown voltage of the aforementioned device.

[0118] This invention also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the methods described above.

[0119] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0120] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for simulating the breakdown voltage of a device, characterized in that, The method includes: Obtain the scanning voltage and device parameters of the target device; Based on the scanning voltage and the device parameters, only the collisional ionization integral of the target device needs to be solved using the Poisson equation; The target breakdown voltage of the target device is determined based on the impact ionization integral. The step of determining the target breakdown voltage of the target device based on the impact ionization integral includes: Determine whether the collision ionization integral is greater than or equal to a preset value; When the collision ionization integral is less than a preset value, the voltage step size is obtained; Based on the voltage step size, the scanning voltage is adjusted, and based on the adjusted scanning voltage and the device parameters, the collision ionization integral of the target device is determined until the collision ionization integral is greater than or equal to the preset value.

2. The method according to claim 1, characterized in that, Determining the collisional ionization integral of the target device based on the scanning voltage and the device parameters includes: The total space charge density is determined based on the scanning voltage and the device parameters; The collisional ionization integral of the target device is determined based on the total space charge density.

3. The method according to claim 2, characterized in that, The device parameters include potential, ferroelectric polarization, elementary charge, ionized donor concentration, ionized acceptor concentration, and charge density contributed by traps and fixed charges; determining the total space charge density based on the scanning voltage and the device parameters includes: The potential of the target device is determined based on the scanning voltage; Substituting the potential, the ferroelectric polarization, the elementary charge, the ionized donor concentration, the ionized acceptor concentration, and the charge density contributed by the trap and fixed charges into the charge density calculation model, the total space charge density of the target device is obtained. The charge density calculation model is as follows: in, The second derivative of electric potential Represents the electrical dielectric constant. Represents electric potential, Indicates ferropolar polarization, Represents the elementary charge. Represents hole density. Represents electron density, Indicates the concentration of ionized donors. Indicates the concentration of ionized acceptors. This represents the charge density contributed by traps and fixed charges.

4. The method according to claim 1, characterized in that, The step of determining the target breakdown voltage of the target device based on the impact ionization integral further includes: When the collision ionization integral is greater than or equal to a preset value, the scanning voltage is determined to be the breakdown voltage to be determined. Determine whether the undetermined breakdown voltage is within a preset voltage range; When the undetermined breakdown voltage is within a preset voltage range, the undetermined breakdown voltage is determined as the target breakdown voltage of the target device. The preset voltage range includes a first voltage and a second voltage, wherein the first voltage is less than the second voltage. When the undetermined breakdown voltage is not within the preset voltage range, the process parameters of the target device are adjusted according to the undetermined breakdown voltage, the first voltage, and the second voltage to update the device parameters, and the impact ionization integral of the target device is determined according to the undetermined breakdown voltage and the updated device parameters.

5. The method according to claim 4, characterized in that, The process parameters include the doping concentration of the target atoms, and adjusting the process parameters of the target device according to the undetermined breakdown voltage, the first voltage, and the second voltage includes: When the expected breakdown voltage is less than the first voltage, the doping concentration of the target atom is reduced; When the expected breakdown voltage is greater than the second voltage, the doping concentration of the target atom is increased.

6. The method according to claim 4, characterized in that, The process parameters include the doping energy of the target atoms, and adjusting the process parameters of the target device according to the undetermined breakdown voltage, the first voltage, and the second voltage includes: When the expected breakdown voltage is less than the first voltage, the doping energy of the target atom is increased; When the expected breakdown voltage is greater than the second voltage, the doping energy of the target atom is reduced.

7. A device for simulating the breakdown voltage of a device, characterized in that, The device includes: The parameter acquisition module is used to acquire the scanning voltage and device parameters of the target device. The first determining module is used to solve the collisional ionization integral of the target device using only the Poisson equation based on the scanning voltage and the device parameters. The second determining module is used to determine the target breakdown voltage of the target device based on the impact ionization integral. Specifically, the second determining module is used for: Determine whether the collision ionization integral is greater than or equal to a preset value; When the collision ionization integral is less than a preset value, the voltage step size is obtained; Based on the voltage step size, the scanning voltage is adjusted, and based on the adjusted scanning voltage and the device parameters, the collision ionization integral of the target device is determined until the collision ionization integral is greater than or equal to the preset value.

8. An electronic device, characterized in that, Including processor and memory, The memory is used to store code and related data; The processor is configured to execute code in the memory to implement the breakdown voltage simulation method for the device according to any one of claims 1 to 6.

9. A storage medium having a computer program stored thereon, which, when executed by a processor, implements a breakdown voltage simulation method for the device according to any one of claims 1 to 6.

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