Prediction method for thermally induced warping distribution in packaging structure and related device

Abstract

The invention discloses a method for predicting thermally-induced warping distribution in a packaging structure and a related device, which can be used in the field of semiconductor manufacturing, and the method comprises the following steps: firstly, obtaining material characteristic parameters and structure parameters of the packaging structure; then, in a plurality of local coordinate systems established based on the position relationship between the reference point in the packaging structure and each core particle, respectively calculating warping values caused by each asymmetric basic unit in the packaging structure based on the material characteristic parameters and the structure parameters; thirdly, superposing the warping values caused by the asymmetric basic units to obtain first warping distribution data of the core particles in the packaging structure; and finally, based on the first warping distribution data and a preset warping hotspot threshold value, determining a warping hotspot coordinate and a warping value. Therefore, the thermally-induced warping distribution in the packaging structure is predicted by superposing the warping values caused by the non-basic units, and warping prediction can be quickly performed on the multi-core-particle packaging structure under the condition of not increasing excessive calculation complexity.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a method for predicting thermally induced warpage distribution in a packaging structure and a related device. Background Art

[0002] As the semiconductor manufacturing process technology nodes continue to decrease, the heterogeneous integration of core particles through advanced packaging technologies such as 2.5D or 3D has become a key technology to break through the size bottleneck. In the advanced packaging process, there are complex heating and cooling processes, which will lead to thermal warping problems, seriously affecting the yield of the integrated chip obtained after packaging.

[0003] At present, in order to solve the problem of thermal warpage in advanced packaging processes, finite element analysis tools are usually used to evaluate the impact of factors such as packaging structure, material parameters and process parameters on warpage, and then the degree of warpage can be reduced by adjusting the design structure of the integrated chip. However, finite element calculations require a lot of computing resources, and the time required to analyze thermal warpage is difficult to estimate. Especially for large-scale integrated chips, using finite element analysis tools to analyze and predict possible thermal warpage in the packaging structure requires a lot of time, which seriously affects the efficiency of chip structure design.

[0004] Therefore, how to quickly predict the thermally induced warpage distribution in the packaging structure becomes a problem that needs to be solved. Summary of the invention

[0005] Based on the above problems, the present application provides a method and related device for predicting the distribution of thermally induced warping in a packaging structure, which can quickly predict the distribution of thermally induced warping in a packaging structure.

[0006] The embodiments of the present application disclose the following technical solutions:

[0007] In a first aspect, an embodiment of the present application provides a method for predicting thermally induced warpage distribution in a packaging structure, the method comprising:

[0008] Obtain material characteristic parameters and structural parameters of the packaging structure;

[0009] In a plurality of local coordinate systems established based on the positional relationship between the reference point in the packaging structure and each core particle, based on the material characteristic parameters and the structural parameters, respectively calculating the warpage value caused by each asymmetric basic unit in the packaging structure;

[0010] Superimposing the warpage values ​​caused by the asymmetric basic units to obtain first warpage distribution data of each core particle in the packaging structure;

[0011] Based on the first warpage distribution data and a preset warpage hotspot threshold, a warpage hotspot coordinate and a warpage value are determined.

[0012] Optionally, before superimposing the warpage values ​​caused by the asymmetric basic units to obtain first warpage distribution data of each core particle in the package structure, the method further includes:

[0013] Based on the material characteristic parameters and the structural parameters, determining the correction coefficient through a pre-established correction coefficient regression model;

[0014] The step of superimposing the warpage values ​​caused by the asymmetric basic units to obtain first warpage distribution data of each core particle in the packaging structure includes:

[0015] The products of the warpage values ​​caused by the asymmetric basic units and the correction coefficient are superimposed to obtain first warpage distribution data of each core particle in the packaging structure.

[0016] Optionally, the regression model is established by the following method:

[0017] A warpage database is established based on the correspondence between the material characteristic parameters and structural parameters of the packaging structure and the actual warpage value;

[0018] Calculating a warpage analytical solution of an asymmetric basic unit in the packaging structure based on the material characteristic parameters and the structural parameters;

[0019] Establishing a correction coefficient database based on the warpage analytical solution and the actual warpage value in the warpage database;

[0020] A correction coefficient regression model is established using the correction coefficient database as a sample.

[0021] Optionally, the calculating, in a plurality of local coordinate systems established based on the positional relationship between the reference point in the packaging structure and each chip, the warpage value caused by each asymmetric basic unit in the packaging structure comprises:

[0022] In a plurality of local coordinate systems established based on the positional relationship between the reference point and each core particle in the packaging structure, respectively calculating the coordinates of the reference point and the coordinates of two intersection points of the extended line connecting the reference point and the core particle and the edge of the packaging structure;

[0023] Based on the coordinates of the reference points corresponding to each core particle and the coordinates of the two intersection points, the warpage values ​​caused by each asymmetric basic unit in the packaging structure are calculated respectively.

[0024] Optionally, determining the warping hotspot coordinates and the warping value based on the first warping distribution data and a preset warping hotspot threshold value includes:

[0025] Based on the first warpage distribution data, determining a stable plane with a minimum direction cosine in a first global coordinate system from a plurality of tangent planes of the package structure;

[0026] Based on the stable plane, establishing a second global coordinate system;

[0027] Calculating and obtaining second warpage distribution data based on the first warpage distribution data and the second global coordinate system;

[0028] Based on the second warpage distribution data and a preset warpage hotspot threshold, the warpage hotspot coordinates and the warpage value are determined.

[0029] Optionally, the calculating second warpage distribution data based on the first warpage distribution data and the second global coordinate system includes:

[0030] The first warping data is calculated by using a coordinate axis translation and rotation formula to obtain second warping distribution data in the second global coordinate system.

[0031] Optionally, the asymmetric basic unit includes a core particle, a filling layer and a base layer.

[0032] In a second aspect, an embodiment of the present application provides a device for predicting thermally induced warpage distribution in a packaging structure, the device comprising: an acquisition module, a calculation module, a superposition module, and a determination module;

[0033] The acquisition module is used to acquire material characteristic parameters and structural parameters of the packaging structure;

[0034] The calculation module is used to calculate the warpage value caused by each asymmetric basic unit in the packaging structure based on the material characteristic parameters and the structural parameters in multiple local coordinate systems established based on the position relationship between the reference point in the packaging structure and each core particle;

[0035] The superposition module is used to superimpose the warpage values ​​caused by the asymmetric basic units to obtain first warpage distribution data of each core particle in the packaging structure;

[0036] The determination module is used to determine the warping hotspot coordinates and the warping value based on the first warping distribution data and a preset warping hotspot threshold.

[0037] In a third aspect, an embodiment of the present application provides a device for predicting thermally induced warpage distribution in a packaging structure, the device comprising: a memory and a processor;

[0038] The memory is used to store program code and transmit the program code to the processor;

[0039] The processor is used to execute the steps of the method for predicting thermal-induced warpage distribution in a packaging structure described in any embodiment of the first aspect according to the program code.

[0040] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, wherein a computer program is stored in the computer-readable storage medium. When the computer program is run on a device for predicting the distribution of thermally induced warping in a packaging structure, the device for predicting the distribution of thermally induced warping in a packaging structure performs the steps of a method for predicting the distribution of thermally induced warping in a packaging structure as described in any embodiment of the first aspect.

[0041] Compared with the prior art, this application has the following beneficial effects:

[0042] The embodiment of the present application provides a method for predicting the distribution of thermally induced warpage in a packaging structure. In the method, first, the material characteristic parameters and structural parameters of the packaging structure are obtained; then, in multiple local coordinate systems established based on the positional relationship between the reference point in the packaging structure and each core particle, the warpage values ​​caused by each asymmetric basic unit in the packaging structure are calculated based on the material characteristic parameters and structural parameters; then, the warpage values ​​caused by each asymmetric basic unit are superimposed to obtain the first warpage distribution data of each core particle in the packaging structure; finally, based on the first warpage distribution data and a preset warpage hotspot threshold, the warpage hotspot coordinates and the warpage value are determined. Thus, the warpage values ​​caused by each asymmetric basic unit are calculated first, and then the first warpage distribution data of the thermally induced warpage distribution in the packaging structure is predicted by superimposing the warpage values ​​caused by each non-basic unit, so that the warpage prediction of the multi-core packaging structure can be performed without increasing too much calculation complexity, and the thermally induced warpage distribution in the packaging structure can be quickly predicted. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0044] Figure 1 A flow chart of a method for predicting thermally induced warpage distribution in a packaging structure provided in an embodiment of the present application;

[0045] Figure 2 A schematic diagram of a local coordinate system provided in an embodiment of the present application;

[0046] Figure 3 A schematic diagram of an asymmetric basic unit structure provided in an embodiment of the present application;

[0047] Figure 4 A schematic diagram of a device for predicting thermally induced warpage distribution in a packaging structure provided in an embodiment of the present application;

[0048] Figure 5 A diagram of a device structure for predicting thermally induced warpage distribution in a packaging structure provided in an embodiment of the present application. DETAILED DESCRIPTION

[0049] The method for predicting the distribution of thermally induced warpage in a packaging structure and the related devices provided in the present application can be used in the field of semiconductor manufacturing. The above is only an example and does not limit the application field of the method for predicting the distribution of thermally induced warpage in a packaging structure and the related devices provided in the present application.

[0050] The terms "first", "second", "third" and "fourth" etc. in the specification, claims and drawings of this application are used to distinguish different objects rather than to limit a specific order.

[0051] In the embodiments of the present application, the words "as an example" or "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design described as "as an example" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of the words "as an example" or "for example" is intended to present the relevant concepts in a specific way.

[0052] The terms used in the implementation section of this application are only used to explain the specific embodiments of this application and are not intended to limit this application.

[0053] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0054] See also Figure 1 , which is a flow chart of a method for predicting thermally induced warpage distribution in a packaging structure provided in an embodiment of the present application, the method comprising:

[0055] S101: Obtain material characteristic parameters and structural parameters of the packaging structure.

[0056] As an example, a model of the packaging structure can be constructed in advance based on the geometric information of the packaging architecture, and the packaging structure can be equivalent to a three-layer composite structure of a base layer-filling layer-core particle, and the materials in the same layer can be regarded as isotropic or transversely anisotropic. Among them, the material characteristic parameters may include parameters such as elastic modulus, Poisson's ratio, and thermal expansion coefficient. In the packaging structure, the material characteristic parameters of various isotropic materials can be obtained by the following formula: Therefore, simplifying the packaging structure into a three-layer composite structure of base layer-filling layer-core particle can reduce the complexity of geometric modeling and make the calculation more efficient.

[0057] Mode In the formula, X represents the elastic modulus, Poisson's ratio or thermal expansion coefficient; c a is the volume fraction of the ath material; n is the number of material types contained in a structural layer. In the embodiment of the present application, a structural layer can be regarded as composed of binary materials, for example, the filling layer can be regarded as composed of two materials, solder joint and polyimide (PI), that is, n=2.

[0058] Optionally, the structural parameters of the packaging structure may include parameters such as the height and length of each structural layer and the center distance between each structural layer.

[0059] S102: In a plurality of local coordinate systems established based on the positional relationship between reference points in the packaging structure and each core particle, warpage values ​​caused by each asymmetric basic unit in the packaging structure are calculated based on material characteristic parameters and structural parameters.

[0060] Each asymmetric basic unit includes a core particle, a filling layer and a base layer.

[0061] As an example, multiple local coordinate systems can be established based on the positional relationship between the reference point and each core particle in the packaging structure, and the coordinates of the reference point and the coordinates of the two intersection points of the extension line of the reference point and the core particle and the edge of the packaging structure can be calculated for the multiple local coordinate systems; then, based on the coordinates of the reference point corresponding to each core particle and the coordinates of the two intersection points, the warping values ​​caused by each asymmetric basic unit in the packaging structure are calculated.

[0062] Specifically, see Figure 2 , this figure is a schematic diagram of a local coordinate system provided in an embodiment of the present application, wherein E is any point in the packaging structure, and the coordinate system (x, y, z) is the first overall coordinate system of the packaging structure.

[0063] The local coordinate system (ξ i , z) as an example, connect point E and the centroid O of the i-th core particle i Draw an extension line, and there are two intersection points C between the extension line and the edge of the package structure i and D i If |O i C i |≥|O i D i |, then The direction is ξ in the local coordinate system i The positive direction of the local coordinate system (ξi ,z); if |O i C i |<|O i D i |, then The direction is ξ in the local coordinate system i The positive direction of the local coordinate system (ξ i ,z).

[0064] by The direction is ξ in the local coordinate system i Taking the positive direction as an example, through the formula ξ iC =-|O i C i |Calculate the intersection point C i In the local coordinate system ξ i The coordinates in ; through the formula ξ iD =|O i D i |Calculate the intersection point D i In the local coordinate system ξ i The coordinates in ; through the formula ξ iE =|O i E| or iE =-|O i E| Calculate the point E in the local coordinate system ξ i The coordinates in .

[0065] Similarly, establish the local coordinate system (ξ j , z), can connect point E with the centroid O of the jth core particle j Draw an extension line, and there are two intersection points C between the extension line and the edge of the package structure j and D j If |O j C j |≥|O j D j |, then The direction is ξ in the local coordinate system j The positive direction of the local coordinate system (ξ j ,z); if |O j C j |<|O j D j |, then The direction is ξ in the local coordinate system j The positive direction of the local coordinate system (ξ j ,z).

[0066] Then, based on the coordinates of the reference points corresponding to each core particle and the coordinates of the two intersection points, the warpage value caused by each asymmetric basic unit in the packaging structure can be calculated by the warpage calculation formula.

[0067] As an example, an asymmetric basic unit structure such as Figure 3 As shown, the calculation formula for the warpage value of the asymmetric basic unit can be:

[0068]

[0069]

[0070] Wherein, Equation (1) provides an analytical expression based on the hyperbolic cosine function, which is used to calculate the asymmetric basic unit at a specific point ξ i The warpage value w i (ξ i ); Formula (2) provides a piecewise linear interpolation formula, which is used to deal with the warping changes in different position intervals in the asymmetric basic unit, and improve the continuity and smoothness of the warping curve of the asymmetric basic unit; B1, B2, B3, B4 and B5 are unknown coefficients, which can be solved based on the force balance equations and boundary conditions; r1 and r2 are characteristic roots of the interface continuity equation, and the values ​​of r1 and r2 can be obtained based on the material characteristic parameters and the interface continuity equation.

[0071] Therefore, for each core particle in the heterogeneous integrated chip array, the beam theory is used to obtain the analytical expression of the warpage of the asymmetric basic unit structure. During the solution process, there is no need to iteratively solve a large set of equations. The warpage value caused by each asymmetric basic unit can be obtained more quickly, and the complex three-dimensional finite element modeling process is avoided, greatly reducing the demand for computing resources.

[0072] As an example, we can use the symmetric boundary condition and assume that B4=B5=0. In this case, w i (0) = w' i (0) = 0, and the values ​​of B1, B2, and B3 can be solved by equation (3):

[0073]

[0074] Among them, h b is the thickness of the bth layer in the asymmetric basic unit, j = 1, 2, 3; D is the sum of the moments of inertia of the three structural layers; A 11 , A 12 , A 21 , A 22 、T1 0 and T2 0 It is a process quantity related to material characteristic parameters, asymmetric basic unit structure and process parameters.

[0075] Specifically, based on the material characteristic parameters and structural parameters of the packaging structure, a set of equations including free boundary conditions, continuity equations, and force / torque balance equations can be constructed to obtain a mechanical model that can describe the deformation and stress distribution of the asymmetric basic unit under temperature changes. Based on the constructed mechanical model, A can be obtained by solving the problem. 11 , A 12 , A 21 , A 22 、T1 0 and T2 0 The value of B1, B2 and B3 can be solved.

[0076] In the process of solving the mechanical model based on the construction, the coefficient matrix is ​​an indispensable part. The elements in the coefficient matrix, such as A 11 , A 12 , A 21 and A 22 , which is associated with the material characteristic parameters such as elastic modulus, Poisson's ratio and thermal expansion coefficient of each structural layer, geometric dimensions and relative positions, and thermal load; T1 0 and T2 0 They represent the position-independent components of the thermal mismatch-induced tension in structural layer 1 and structural layer 2, respectively, which are determined by the material characteristic parameters, thickness and temperature change values ​​before and after deformation of each structural layer.

[0077] Before solving the values ​​of B4 and B5, the pre-constructed warping database can be used as a sample, and a coefficient regression model can be established using machine learning algorithms such as the random forest algorithm. The coefficient regression model can be used to learn the warping behavior pattern from the existing data, and then in new situations, the values ​​of B4 and B5 can be accurately predicted through the coefficient regression model based on the material characteristic parameters and structural parameters.

[0078] For example, the actual warpage value can be obtained by using an experiment or finite element software simulation method, and a warpage database can be constructed based on the corresponding relationship between the material characteristic parameters and structural parameters of the packaging structure and the actual warpage value. For each actual warpage value obtained by experiment or simulation, the corresponding data in the warpage database may include, but are not limited to: material characteristic parameters such as equivalent modulus, equivalent Poisson's ratio and equivalent thermal expansion coefficient of each structural layer, structural parameters such as thickness, length and center distance between each structural layer, and temperature of each structural layer material.

[0079] S103: superimposing the warpage values ​​caused by each asymmetric basic unit to obtain first warpage distribution data of each core particle in the packaging structure.

[0080] As an example, the formula The warpage caused by each core particle in the packaging structure at point E is superimposed to obtain the first warpage distribution data of each core particle in the packaging structure. Wherein, m is the total number of core particles in the packaging structure; (x, y) is the coordinate of point E in the first global coordinate system.

[0081] Therefore, by superimposing the warping values ​​caused by each asymmetric basic unit to obtain the first warping distribution data, the calculation scale can be effectively controlled, so as to quickly obtain the first warping distribution data, avoiding the problem of exponential growth of calculation time as the scale of the integrated chip increases when applying the traditional finite element method.

[0082] Optionally, the warpage analytical solution w of each asymmetric basic unit in multiple experiments or simulations can be calculated by using the experimental or finite element software simulation method based on the material characteristic parameters and structural parameters of the packaging structure corresponding to each of the multiple experiments or simulations through formula (1): i (ξ i ); Through the pre-established warping database, the actual warping value w of each asymmetric basic unit in multiple experiments or simulations is obtained. 0i (ξ i ). Then, by calculating the ratio of the actual warpage value to the corresponding warpage analytical solution, the correction coefficient k can be obtained. i =w 0i (ξ i ) / w i (ξ i ). A correction coefficient database is established based on the calculated correction coefficients corresponding to different experimental or simulation times. A correction coefficient regression model can be established by using a machine learning algorithm such as a random forest method and taking the correction coefficient database as a sample.

[0083] Then, in the process of calculating the warpage value caused by each asymmetric basic unit, the correction coefficient can be determined based on the material characteristic parameters and the structural parameters through the pre-established correction coefficient regression model, and the correction coefficient k i and the analytical solution of warpage w i (ξ i ) as the warpage value caused by each asymmetric basic unit, and correct the warpage analytical solution calculated by formula (1), so as to achieve a fast prediction of the warpage value caused by each non-basic symmetric unit with high precision. Based on this, the first warpage distribution data of each core particle in the packaging structure can be superimposed with the product of the warpage value caused by each asymmetric basic unit and the correction coefficient, and the formula Calculated.

[0084] S104: Determine the warping hotspot coordinates and the warping value based on the first warping distribution data and a preset warping hotspot threshold.

[0085] Specifically, a warping hotspot threshold may be preset, points in the first warping distribution data whose warping values ​​are greater than the warping hotspot threshold may be marked as hotspots, and the hotspot coordinates and the warping values ​​may be output.

[0086] Optionally, in order to more conveniently set a suitable warping hotspot threshold and accurately judge the hotspot, a stable plane in the packaging structure can be determined, and a new overall coordinate system, i.e., a second overall coordinate system, can be established based on the stable plane, and the first warping distribution data can be converted into second warping distribution data under the second overall coordinate system, and then the points in the second warping distribution data whose warping values ​​are greater than the warping hotspot threshold are marked as hotspots, and the hotspot coordinates and warping values ​​are output, thereby helping engineers to discover potential problem points during the design of the packaging structure, and then optimize the layout design to avoid these problems, accelerate the product development cycle, and improve production yield.

[0087] Specifically, p minimum value points and stationary value points of the bottom warpage of the package structure can be obtained according to the first warpage distribution data, and three points can be selected from the p points to determine a plane, and at most C n 3 planes, removing the combinations of three points on the same straight line, and obtaining q tangent planes f(x,y). For any point (x,y) in the package structure, f(x,y)≤w(x,y) is satisfied.

[0088] Comparing the direction cosines of q tangent planes, we can use the formula: Min(cos 2 αs+cos 2 βs+cos 2 γs),1≤s≤q, determine the stable plane with the smallest direction cosine in the first global coordinate system from the q tangent planes. s is the angle between the sth tangent plane and the x-axis of the first global coordinate system; β s is the angle between the sth tangent plane and the y-axis of the first global coordinate system; γ s is the angle between the sth tangent plane and the z-axis of the first global coordinate system.

[0089] Based on the stable plane, a new coordinate system is established, namely the second global coordinate system (x * ,y * ,z * ). The second global coordinate system (x * ,y * ,z * ) and the direction cosines of the first global coordinate system (x, y, z) in the x, y, and z directions are denoted as: l1, m1, n1; l2, m2, n2; l3, m3, n3.

[0090] According to the coordinate axis translation and rotation formula, the second warping distribution data w in the second global coordinate system can be calculated based on the first warping distribution data w(x, y) and the direction cosine matrix of the second global coordinate system and the first global coordinate system. * (x * ,y * ):

[0091]

[0092] The second warping distribution data can reflect the warping degree of each point in the packaging structure relative to the stable plane. Furthermore, based on the second warping distribution data and the preset warping hotspot threshold, the warping hotspot coordinates and the warping value relative to the stable plane can be determined more accurately.

[0093] Among them, the warping hotspot threshold can be set to K threshold , if the second warpage distribution data does not meet the threshold condition Max(w * (x * ,y * ))≤K threshold If there are points that do not meet the threshold condition, the points are marked as hot spots, and the warping hot spot coordinates and warping values ​​of the hot spots are output.

[0094] In the embodiment of the present application, first, the material characteristic parameters and structural parameters of the packaging structure are obtained; then, in multiple local coordinate systems established based on the positional relationship between the reference point in the packaging structure and each core particle, the warpage value caused by each asymmetric basic unit in the packaging structure is calculated based on the material characteristic parameters and structural parameters; then, the warpage values ​​caused by each asymmetric basic unit are superimposed to obtain the first warpage distribution data of each core particle in the packaging structure; finally, based on the first warpage distribution data and the preset warpage hotspot threshold, the warpage hotspot coordinates and the warpage value are determined. Thus, the warpage values ​​caused by each asymmetric basic unit are calculated first, and then the first warpage distribution data of the thermally induced warpage distribution in the packaging structure is predicted by superimposing the warpage values ​​caused by each non-basic unit, so that the warpage prediction of the multi-core packaging structure can be performed without increasing too much calculation complexity, and the thermally induced warpage distribution in the packaging structure can be quickly predicted.

[0095] See also Figure 4 , this figure is a schematic diagram of a prediction device for thermally induced warping distribution in a packaging structure provided in an embodiment of the present application, the device includes: an acquisition module 401, a calculation module 402, a superposition module 403 and a determination module 404.

[0096] An acquisition module 401 is used to acquire material characteristic parameters and structural parameters of the packaging structure;

[0097] A calculation module 402 is used to calculate the warpage value caused by each asymmetric basic unit in the packaging structure based on the material characteristic parameters and the structural parameters in multiple local coordinate systems established based on the position relationship between the reference point in the packaging structure and each core particle;

[0098] A superposition module 403 is used to superimpose the warpage values ​​caused by each asymmetric basic unit to obtain first warpage distribution data of each core particle in the package structure;

[0099] The determination module 404 is used to determine the warping hotspot coordinates and the warping value based on the first warping distribution data and a preset warping hotspot threshold.

[0100] Therefore, the warpage value caused by each asymmetric basic unit is calculated first, and then the first warpage distribution data of the thermally induced warpage distribution in the packaging structure is predicted by superimposing the warpage values ​​caused by each non-basic unit. This can predict the warpage of a multi-chip packaging structure without increasing the calculation complexity too much, thereby realizing rapid prediction of the thermally induced warpage distribution in the packaging structure.

[0101] Optionally, the calculation module 402 is specifically used to: calculate the coordinates of the reference point and the coordinates of the two intersection points of the extension line of the reference point and the core particle and the edge of the packaging structure in multiple local coordinate systems established based on the positional relationship between the reference point and each core particle in the packaging structure; calculate the warping value caused by each asymmetric basic unit in the packaging structure based on the coordinates of the reference point corresponding to each core particle and the coordinates of the two intersection points.

[0102] Optionally, the determination module 404 is specifically used to: determine, based on the first warping distribution data, a stable plane with the smallest direction cosine in the first overall coordinate system from multiple tangent planes of the packaging structure; establish a second overall coordinate system based on the stable plane; calculate the second warping distribution data based on the first warping distribution data and the second overall coordinate system; determine the warping hotspot coordinates and the warping value based on the second warping distribution data and a preset warping hotspot threshold.

[0103] Optionally, based on the second warping distribution data and a preset warping hotspot threshold, the warping hotspot coordinates and the warping value are determined, specifically: the first warping data is calculated by a coordinate axis translation and rotation formula to obtain the second warping distribution data in the second overall coordinate system.

[0104] Optionally, another device for predicting thermally induced warping distribution in a packaging structure provided in an embodiment of the present application also includes a correction module for determining a correction coefficient based on material characteristic parameters and structural parameters through a pre-established correction coefficient regression model; a superposition module 403 is specifically used to: superimpose the product of the warping value caused by each asymmetric basic unit and the correction coefficient to obtain the first warping distribution data of each core particle in the packaging structure.

[0105] Optionally, another device for predicting thermally induced warping distribution in a packaging structure provided in an embodiment of the present application also includes a model building module, which is used to establish a warping database based on the correspondence between material characteristic parameters and structural parameters of the packaging structure and actual warping values; calculate the warping analytical solution of the asymmetric basic unit in the packaging structure based on the material characteristic parameters and structural parameters; establish a correction coefficient database based on the warping analytical solution and the actual warping values ​​in the warping database; and establish a correction coefficient regression model using the correction coefficient database as a sample.

[0106] See also Figure 5 , this figure is a structural diagram of a device for predicting thermal-induced warpage distribution in a packaging structure provided in an embodiment of the present application, and the device includes: a memory 501 and a processor 502.

[0107] Memory 501: used to store program codes and transmit the program codes to the processor.

[0108] Processor 502: used for executing the steps of the method for predicting the distribution of thermally induced warpage in the package structure according to the instructions in the program code.

[0109] In addition, the present application also provides a computer-readable storage medium, which stores computer instructions. When the computer instructions are run on a device for predicting the distribution of thermally induced warpage in a packaging structure, the device for predicting the distribution of thermally induced warpage in a packaging structure executes the steps of the above-mentioned method for predicting the distribution of thermally induced warpage in a packaging structure.

[0110] It should be noted that each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device and system embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiments. The device and system embodiments described above are merely schematic, wherein the units described as separate components may or may not be physically separated, and the components indicated as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Ordinary technicians in this field can understand and implement it without paying creative labor.

[0111] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A method for predicting thermally induced warpage distribution in a packaging structure, characterized in that: The method comprises: Obtain material characteristic parameters and structural parameters of the packaging structure; In a plurality of local coordinate systems established based on the positional relationship between the reference point in the packaging structure and each core particle, based on the material characteristic parameters and the structural parameters, respectively calculating the warpage value caused by each asymmetric basic unit in the packaging structure; Superimposing the warpage values ​​caused by the asymmetric basic units to obtain first warpage distribution data of each core particle in the packaging structure; Based on the first warpage distribution data and a preset warpage hotspot threshold, a warpage hotspot coordinate and a warpage value are determined.

2. The method according to claim 1, characterized in that Before superimposing the warpage values ​​caused by the asymmetric basic units to obtain first warpage distribution data of each core particle in the packaging structure, the method further includes: Based on the material characteristic parameters and the structural parameters, determining the correction coefficient through a pre-established correction coefficient regression model; The step of superimposing the warpage values ​​caused by the asymmetric basic units to obtain first warpage distribution data of each core particle in the packaging structure includes: The products of the warpage values ​​caused by the asymmetric basic units and the correction coefficient are superimposed to obtain first warpage distribution data of each core particle in the packaging structure.

3. The method according to claim 2, characterized in that The regression model was established by the following method: A warpage database is established based on the correspondence between the material characteristic parameters and structural parameters of the packaging structure and the actual warpage value; Calculating a warpage analytical solution of an asymmetric basic unit in the packaging structure based on the material characteristic parameters and the structural parameters; Establishing a correction coefficient database based on the warpage analytical solution and the actual warpage value in the warpage database; A correction coefficient regression model is established using the correction coefficient database as a sample.

4. The method according to claim 1, characterized in that: The method of calculating the warpage value caused by each asymmetric basic unit in the packaging structure in a plurality of local coordinate systems established based on the position relationship between the reference point in the packaging structure and each core particle includes: In a plurality of local coordinate systems established based on the positional relationship between the reference point and each core particle in the packaging structure, respectively calculating the coordinates of the reference point and the coordinates of two intersection points of the extended line connecting the reference point and the core particle and the edge of the packaging structure; Based on the coordinates of the reference points corresponding to each core particle and the coordinates of the two intersection points, the warpage values ​​caused by each asymmetric basic unit in the packaging structure are calculated respectively.

5. The method according to claim 1, characterized in that The determining of the warping hotspot coordinates and the warping value based on the first warping distribution data and a preset warping hotspot threshold value includes: Based on the first warpage distribution data, determining a stable plane with a minimum direction cosine in a first global coordinate system from a plurality of tangent planes of the package structure; Based on the stable plane, establishing a second global coordinate system; Calculating and obtaining second warpage distribution data based on the first warpage distribution data and the second global coordinate system; Based on the second warpage distribution data and a preset warpage hotspot threshold, the warpage hotspot coordinates and the warpage value are determined.

6. The method according to claim 5, characterized in that The calculating and obtaining the second warpage distribution data based on the first warpage distribution data and the second global coordinate system includes: The first warping data is calculated by using a coordinate axis translation and rotation formula to obtain second warping distribution data in the second global coordinate system.

7. The method according to claim 1, characterized in that The asymmetric basic unit includes a core particle, a filling layer and a base layer.

8. A device for predicting thermally induced warpage distribution in a packaging structure, characterized in that: The device comprises: an acquisition module, a calculation module, a superposition module and a determination module; The acquisition module is used to acquire material characteristic parameters and structural parameters of the packaging structure; The calculation module is used to calculate the warpage value caused by each asymmetric basic unit in the packaging structure based on the material characteristic parameters and the structural parameters in multiple local coordinate systems established based on the position relationship between the reference point in the packaging structure and each core particle; The superposition module is used to superimpose the warpage values ​​caused by the asymmetric basic units to obtain first warpage distribution data of each core particle in the packaging structure; The determination module is used to determine the warping hotspot coordinates and the warping value based on the first warping distribution data and a preset warping hotspot threshold.

9. A device for predicting the distribution of thermally induced warpage in a packaging structure, characterized in that: The device comprises: a memory and a processor; The memory is used to store program code and transmit the program code to the processor; The processor is used to execute the steps of the method for predicting thermal-induced warpage distribution in a packaging structure according to any one of claims 1 to 7 according to the program code.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program. When the computer program runs on a device for predicting thermally induced warpage distribution in a packaging structure, the device for predicting thermally induced warpage distribution in a packaging structure performs the steps of a method for predicting thermally induced warpage distribution in a packaging structure as described in any one of claims 1 to 7.

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