Pressure control system and method for pressure sensor

Abstract

The present invention relates to the field of data monitoring technology and is a pressure control system and method for a pressure sensor. The specific method includes: establishing a digital twin model according to the target etching groove type, and dividing the digital twin model into etching monitoring unit areas; real-time collection of etching state data of each etching groove on the semiconductor substrate to be etched, and obtaining the etching efficiency index and etching quality index of each groove depth layer; dynamically screening the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and controlling the pressure sensor to execute the pressure control strategy; the present invention solves the problems of insufficient etching accuracy and low etching efficiency in the prior art.

Description

Technical Field

[0001] The present invention relates to the technical field of data monitoring, and is a pressure control system and method for a pressure sensor. Background Art

[0002] In the semiconductor manufacturing process, as semiconductor process technology develops towards smaller size and higher integration, traditional etching control methods have become difficult to meet the increasing precision requirements and quality standards. The existing etching methods lack a monitoring and feedback mechanism for real-time changes in the etching process, resulting in the shape and depth of the etched groove being difficult to achieve ideal accuracy. In addition, the etching process lacks real-time evaluation and optimization of etching efficiency, resulting in excessively long etching time and low production efficiency. During the etching process, the evaluation of etching quality mainly relies on the surface morphology analysis after etching, and it is impossible to monitor and adjust the etching parameters in real time during the etching process, resulting in unstable etching quality and difficulty in controlling the surface roughness within the ideal range, resulting in the performance of semiconductor devices cannot be guaranteed. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to address the problems of insufficient etching precision and low etching efficiency in the prior art, and propose a pressure control system and method for a pressure sensor.

[0004] In order to achieve the above-mentioned object, the technical solution of a pressure control method for a pressure sensor of the present invention includes the following steps:

[0005] S1: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, establish a digital twin model based on the target etching groove type, and divide the digital twin model into etching monitoring unit areas;

[0006] S2: Open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the built-in pressure sensor of the fluoroplastic valve, and collect the etching status data of each etching groove on the semiconductor substrate to be etched in real time;

[0007] S3: extracting etching status data of each lateral etching monitoring unit area group on the same groove depth layer, and importing the etching status data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer;

[0008] S4: acquiring etching status data of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning equipment, importing the etching status data of each longitudinal etching monitoring unit area group into an etching quality check strategy, and calculating etching quality indexes of each adjacent groove depth layer;

[0009] S5: According to the etching efficiency index and the etching quality index, the etching monitoring unit area to be adjusted is dynamically screened, and the pressure sensor is controlled to execute the pressure control strategy.

[0010] Specifically, S1 includes the following steps:

[0011] S11: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, and establish a digital twin model according to the target etching groove type, wherein the target etching groove type includes: a V-shaped groove, a trapezoidal groove, a vertical groove, and a U-shaped groove;

[0012] S12: Divide the digital twin model into etching monitoring unit areas according to the target etching groove type, as follows:

[0013] When the target etching groove is a V-shaped groove, a trapezoidal groove, or a vertical groove, the groove depth of the target etching groove is extracted, and the groove depth is evenly divided into a plurality of groove depth layers;

[0014] When the target etching groove is a U-shaped groove, the groove arc of the U-shaped groove is extracted, and the angle between the tangent line of each point on the groove arc and the center line of the U-shaped groove is calculated. The angle baseline difference range is set, and the points on the groove arc are divided into multiple arc segments according to the angle baseline difference range. Among them, the arc segments within the same angle baseline difference range constitute a groove depth layer;

[0015] S13: extracting the total perimeter of the sidewall of each groove depth layer in the groove at the same time, and evenly dividing the total perimeter of the sidewall into regions of equal length;

[0016] S14: In the digital twin model, multiple etching monitoring unit areas are obtained, where there are M on the nth groove depth layer. n An etching monitoring unit area.

[0017] Specifically, in S2, the etching state data includes: actual etching angle data, actual etching time data, and etching surface morphology data of each etching monitoring unit area.

[0018] Specifically, S3 includes the following specific steps:

[0019] S31: extracting etching state data of each lateral etching monitoring unit area group on the same groove depth layer;

[0020] Wherein, each lateral etching monitoring unit area group includes: the mth adjacent areas on the same groove depth layer n and mth n -1 etching monitoring unit area, there are a total of I on the nth groove depth layer n A lateral etching monitoring unit area group, in is the sequence of the lateral etching monitoring unit area group,

[0021] S32: importing the etching status data of each lateral etching monitoring unit area group into an etching efficiency verification strategy, wherein the etching efficiency verification strategy includes: an etching angle deviation verification sub-strategy and an etching time deviation verification sub-strategy;

[0022] The etching angle deviation checking sub-strategy is specifically as follows:

[0023]

[0024] s1 is the etching angle deviation coefficient;

[0025] Respectively represent the index 2i n ,2i n The actual etching angle of the etching monitoring unit area of ​​-1;

[0026] For index i n The average value of the actual etching angle of the lateral etching monitoring unit area group;

[0027] For I n The average value of the actual etching angle of the lateral etching monitoring unit area group.

[0028] Specifically, S3 also includes the following specific steps:

[0029] S33: Importing the etching status data of each lateral etching monitoring unit area group into the etching time deviation checking sub-strategy, wherein the etching time deviation checking sub-strategy is specifically as follows:

[0030]

[0031] Wherein, s2 is the etching time deviation coefficient;

[0032] t 2in ,t 2in-1 Respectively represent the index 2i n ,2i n -1 is the actual etching time of the etching monitoring unit area;

[0033] For index i n The average actual etching time of the lateral etching monitoring unit area group;

[0034] For I n The average actual etching time of each lateral etching monitoring unit area group;

[0035] S34: extracting the etching angle deviation coefficient and the etching time deviation coefficient to obtain the etching efficiency index of each groove depth layer. The calculation strategy of the etching efficiency index is: xl n =α1×s1+α2×s2, where xl n is the etching efficiency index of the nth groove depth layer, α1 and α2 are the efficiency impact proportional coefficients of etching angle deviation and etching time deviation, respectively.

[0036] Specifically, S4 includes the following specific steps:

[0037] S41: acquiring a high-resolution surface topography image of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning;

[0038] S42: Preprocessing the SEM image using image processing software, including removing noise and smoothing the image, and extracting surface profile data from the preprocessed image using a profile extraction algorithm, wherein the surface profile data includes: the number of peaks and valleys and the height of each peak and valley;

[0039] S43: According to S42, the roughness value of each vertical etching monitoring unit area group is calculated, wherein each vertical etching monitoring unit area group includes: adjacent m-th adjacent groove depth layers n and mth n -1 etching monitoring unit area; in N groove depth layers, at the mth n The etching monitoring unit area of ​​the column is composed of There are a total of vertical etching monitoring unit area groups on the nth groove depth layer. indivual, is the index of the vertical etching monitoring unit area group,

[0040] The calculation strategy of the roughness value is:

[0041]

[0042] For the Roughness value of each longitudinal etching monitoring unit area group;

[0043] No. The mth vertical etching monitoring unit area group n The number of peak points in an etching monitoring unit area is is the index;

[0044] No. The mth vertical etching monitoring unit area group n-The number of peak points in one etching monitoring unit area is is the index;

[0045] Respectively The height of the peaks and valleys;

[0046] Respectively The height of the peaks and valleys.

[0047] Specifically, S4 further includes the following specific steps:

[0048] S44: Calculate the etching quality index of each adjacent groove depth layer according to S41-S43, specifically including: zl n ,zl n-1 are the etching quality indices of the nth and n-1th groove depth layers, respectively, c′ is the etching quality indices of the nth groove depth layer, In the vertical etching monitoring unit area group, The closest roughness value;

[0049] C max ,C min They are The maximum and minimum roughness values ​​in the vertical etching monitoring unit area group.

[0050] Specifically, S5 includes the following specific steps:

[0051] S51: Construct an etching standard function F(n) based on the etching efficiency index and the etching quality index, F(n) = k1×xl n +k2×zl n , k1, k2 are the proportion coefficients of etching efficiency index and etching quality index respectively;

[0052] S52: Preset an etching standard baseline. When it is monitored that the etching standard value of a groove depth layer is lower than the etching standard baseline, dynamically select the groove depth layer as an etching monitoring unit area to be adjusted, and simultaneously extract the etching efficiency index and etching quality index of the groove depth layer;

[0053] S53: Preset an etching standard efficiency, and when the etching efficiency index of the groove depth layer is lower than the etching standard efficiency, control the direction in which the etching gas in the etching reaction chamber flows into the nozzle;

[0054] S54: Preset the etching standard quality. When the etching quality index of the groove depth layer is lower than the etching standard quality, control the valve opening of the fluoroplastic valve to increase the pressure of the etching gas in the etching reaction chamber.

[0055] In addition, the present invention provides a pressure control system for a pressure sensor, comprising the following modules:

[0056] Digital twin model construction module, unit area division module, etching state data acquisition module, etching efficiency evaluation module, etching quality evaluation module and pressure control strategy execution module;

[0057] The digital twin model building module is used to identify a target etching groove shape in an etching task of a semiconductor substrate to be etched, and to establish a digital twin model according to the target etching groove shape;

[0058] The unit area division module is used to divide the digital twin model into etching monitoring unit areas;

[0059] The etching state data acquisition module is used to open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the pressure sensor built into the fluoroplastic valve, and collect the etching state data of each etching groove on the semiconductor substrate to be etched in real time;

[0060] The etching efficiency evaluation module is used to extract the etching state data of each lateral etching monitoring unit area group on the same groove depth layer, and import the etching state data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer;

[0061] The etching quality assessment module is used to obtain etching status data of each longitudinal etching monitoring unit area group in adjacent groove depth layers through an electronic scanning device, and import the etching status data of each longitudinal etching monitoring unit area group into the etching quality verification strategy to calculate the etching quality index of each adjacent groove depth layer;

[0062] The pressure control strategy execution module dynamically selects the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and controls the pressure sensor to execute the pressure control strategy.

[0063] A storage medium stores instructions, and when a computer reads the instructions, the computer is caused to execute the pressure control method for a pressure sensor.

[0064] An electronic device includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the pressure control method for a pressure sensor is implemented.

[0065] Compared with the prior art, the technical effects of the present invention are as follows:

[0066] 1. By establishing a digital twin model, the present invention can accurately divide the etching monitoring unit area of ​​the semiconductor substrate to be etched, thereby realizing fine control and real-time monitoring of complex grooves (such as V-shaped, U-shaped, and trapezoidal grooves), and improving the accuracy of the shape and depth of the etching grooves.

[0067] 2. The present invention collects and analyzes etching status data in real time. Through the etching angle deviation verification sub-strategy and the etching time deviation verification sub-strategy, the etching efficiency can be evaluated in real time. At the same time, the present invention monitors and adjusts the etching parameters in real time during the etching process to ensure that the roughness of the etched surface is controlled within the ideal range, thereby improving the stability of the etching quality, significantly shortening the etching time, and improving production efficiency.

[0068] 3. The present invention dynamically screens the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and implements the pressure control strategy. It can dynamically adjust the parameters according to the real-time data during the etching process, cope with the random changes and uncertainties in the etching process, and improve the flexibility and adaptability of the etching process. BRIEF DESCRIPTION OF THE DRAWINGS

[0069] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0070] in:

[0071] Figure 1 1 is a flow chart of a pressure control method for a pressure sensor according to the present invention;

[0072] Figure 2 This is a structural schematic diagram of a pressure control system for a pressure sensor of the present invention. DETAILED DESCRIPTION

[0073] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0074] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0075] Secondly, the term "one embodiment" or "embodiment" herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in various places throughout this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive of other embodiments.

[0076] Example 1:

[0077] like Figure 1 As shown, a pressure control method for a pressure sensor according to an embodiment of the present invention includes the following specific steps:

[0078] S1: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, establish a digital twin model based on the target etching groove type, and divide the digital twin model into etching monitoring unit areas;

[0079] S1 includes the following steps:

[0080] S11: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, and establish a digital twin model according to the target etching groove type, wherein the target etching groove type includes: a V-shaped groove, a trapezoidal groove, a vertical groove, and a U-shaped groove;

[0081] S12: Divide the digital twin model into etching monitoring unit areas according to the target etching groove type, as follows:

[0082] When the target etching groove is a V-shaped groove, a trapezoidal groove, or a vertical groove, the groove depth of the target etching groove is extracted, and the groove depth is evenly divided into a plurality of groove depth layers;

[0083] When the target etching groove is a U-shaped groove, the groove arc of the U-shaped groove is extracted, and the angle between the tangent line of each point on the groove arc and the center line of the U-shaped groove is calculated. The angle baseline difference range is set, and the points on the groove arc are divided into multiple arc segments according to the angle baseline difference range. Among them, the arc segments within the same angle baseline difference range constitute a groove depth layer;

[0084] S13: extracting the total perimeter of the sidewall of each groove depth layer in the groove at the same time, and evenly dividing the total perimeter of the sidewall into regions of equal length;

[0085] S14: In the digital twin model, multiple etching monitoring unit areas are obtained, where there are M on the nth groove depth layer. n An etching monitoring unit area.

[0086] S2: Open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the built-in pressure sensor of the fluoroplastic valve, and collect the etching status data of each etching groove on the semiconductor substrate to be etched in real time;

[0087] In S2, the etching state data includes: actual etching angle data, actual etching time data and etching surface morphology data of each etching monitoring unit area.

[0088] S3: extracting etching status data of each lateral etching monitoring unit area group on the same groove depth layer, and importing the etching status data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer;

[0089] S3 includes the following specific steps:

[0090] S31: extracting etching state data of each lateral etching monitoring unit area group on the same groove depth layer;

[0091] Wherein, each lateral etching monitoring unit area group includes: the mth adjacent areas on the same groove depth layer n and mth n -1 etching monitoring unit area, there are a total of I on the nth groove depth layer n A lateral etching monitoring unit area group, i n is the sequence of the lateral etching monitoring unit area group,

[0092] S32: importing the etching status data of each lateral etching monitoring unit area group into an etching efficiency verification strategy, wherein the etching efficiency verification strategy includes: an etching angle deviation verification sub-strategy and an etching time deviation verification sub-strategy;

[0093] The etching angle deviation checking sub-strategy is specifically as follows:

[0094]

[0095] s1 is the etching angle deviation coefficient;

[0096] Respectively represent the index 2i n ,2i n The actual etching angle of the etching monitoring unit area of ​​-1;

[0097] For index i n The average value of the actual etching angle of the lateral etching monitoring unit area group;

[0098] For In The average value of the actual etching angle of the lateral etching monitoring unit area group.

[0099] S3 also includes the following specific steps:

[0100] S33: Importing the etching status data of each lateral etching monitoring unit area group into the etching time deviation checking sub-strategy, wherein the etching time deviation checking sub-strategy is specifically as follows:

[0101]

[0102] Wherein, s2 is the etching time deviation coefficient;

[0103] Respectively represent the index 2i n ,2i n -1 is the actual etching time of the etching monitoring unit area;

[0104] For index i n The average actual etching time of the lateral etching monitoring unit area group;

[0105] For I n The average actual etching time of each lateral etching monitoring unit area group;

[0106] S34: extracting the etching angle deviation coefficient and the etching time deviation coefficient to obtain the etching efficiency index of each groove depth layer. The calculation strategy of the etching efficiency index is: xl n =α1×s1+α2×s2, where xl n is the etching efficiency index of the nth groove depth layer, α1 and α2 are the efficiency impact proportional coefficients of etching angle deviation and etching time deviation, respectively.

[0107] S4: acquiring etching status data of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning equipment, importing the etching status data of each longitudinal etching monitoring unit area group into an etching quality check strategy, and calculating etching quality indexes of each adjacent groove depth layer;

[0108] S4 includes the following specific steps:

[0109] S41: acquiring a high-resolution surface topography image of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning;

[0110] Illustratively, in this embodiment, the electron scanning device is an in-situ scanning electron microscope;

[0111] S42: Preprocessing the SEM image using image processing software, including removing noise and smoothing the image, and extracting surface profile data from the preprocessed image using a profile extraction algorithm, wherein the surface profile data includes: the number of peaks and valleys and the height of each peak and valley;

[0112] S43: According to S42, the roughness value of each vertical etching monitoring unit area group is calculated, wherein each vertical etching monitoring unit area group includes: adjacent m-th adjacent groove depth layers n and mth n -1 etching monitoring unit area; in N groove depth layers, at the mth n The etching monitoring unit area of ​​the column is composed of There are a total of vertical etching monitoring unit area groups on the nth groove depth layer. indivual, is the index of the vertical etching monitoring unit area group,

[0113] The calculation strategy of the roughness value is:

[0114]

[0115] For the Roughness value of each longitudinal etching monitoring unit area group;

[0116] No. The mth vertical etching monitoring unit area group n The number of peak points in an etching monitoring unit area is is the index;

[0117] No. The mth vertical etching monitoring unit area group n -The number of peak points in one etching monitoring unit area is is the index;

[0118] Respectively The height of the peaks and valleys;

[0119] Respectively The height of the peaks and valleys.

[0120] S4 also includes the following specific steps:

[0121] S44: Calculate the etching quality index of each adjacent groove depth layer according to S41-S43, specifically including: zl n,zl n-1 are the etching quality indices of the nth and n-1th groove depth layers, respectively, c′ is the etching quality indices of the nth groove depth layer, In the vertical etching monitoring unit area group, The closest roughness value;

[0122] C max ,C min They are The maximum and minimum roughness values ​​in the vertical etching monitoring unit area group.

[0123] S5: According to the etching efficiency index and the etching quality index, the etching monitoring unit area to be adjusted is dynamically screened, and the pressure sensor is controlled to execute the pressure control strategy.

[0124] S5 includes the following specific steps:

[0125] S51: Construct an etching standard function F(n) based on the etching efficiency index and the etching quality index, F(n) = k1×xl n +k2×zl n , k1, k2 are the proportion coefficients of etching efficiency index and etching quality index respectively;

[0126] S52: Preset an etching standard baseline. When it is monitored that the etching standard value of a certain groove depth layer is lower than the etching standard baseline, dynamically select the groove depth layer as the etching monitoring unit area to be adjusted, and simultaneously extract the etching efficiency index and etching quality index of the groove depth layer;

[0127] S53: Preset an etching standard efficiency, and when the etching efficiency index of the groove depth layer is lower than the etching standard efficiency, control the direction in which the etching gas in the etching reaction chamber flows into the nozzle;

[0128] S54: Preset the etching standard quality. When the etching quality index of the groove depth layer is lower than the etching standard quality, control the valve opening of the fluoroplastic valve to increase the pressure of the etching gas in the etching reaction chamber.

[0129] Example 2:

[0130] like Figure 2 As shown, a pressure control system for a pressure sensor according to an embodiment of the present invention includes the following modules:

[0131] Digital twin model construction module, unit area division module, etching state data acquisition module, etching efficiency evaluation module, etching quality evaluation module and pressure control strategy execution module;

[0132] The digital twin model building module is used to identify a target etching groove shape in an etching task of a semiconductor substrate to be etched, and to establish a digital twin model according to the target etching groove shape;

[0133] The unit area division module is used to divide the digital twin model into etching monitoring unit areas;

[0134] The etching state data acquisition module is used to open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the pressure sensor built into the fluoroplastic valve, and collect the etching state data of each etching groove on the semiconductor substrate to be etched in real time;

[0135] The etching efficiency evaluation module is used to extract the etching state data of each lateral etching monitoring unit area group on the same groove depth layer, and import the etching state data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer;

[0136] The etching quality assessment module is used to obtain etching status data of each longitudinal etching monitoring unit area group in adjacent groove depth layers through an electronic scanning device, and import the etching status data of each longitudinal etching monitoring unit area group into the etching quality verification strategy to calculate the etching quality index of each adjacent groove depth layer;

[0137] The pressure control strategy execution module dynamically selects the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and controls the pressure sensor to execute the pressure control strategy.

[0138] Example 3:

[0139] This embodiment provides an electronic device, comprising: a processor and a memory, wherein the memory stores a computer program that can be called by the processor;

[0140] The processor executes the above-mentioned pressure control method for a pressure sensor by calling a computer program stored in the memory.

[0141] The electronic device may have relatively large differences due to different configurations or performances, and may include one or more processors (Central Processing Units, CPU) and one or more memories, wherein the memories store at least one computer program, which is loaded and executed by the processor to implement a pressure control method for a pressure sensor provided in the above method embodiment. The electronic device may also include other components for implementing the functions of the device. For example, the electronic device may also have components such as a wired or wireless network interface and an input / output interface to input and output data. This embodiment will not be described in detail here.

[0142] Example 4:

[0143] This embodiment provides a computer-readable storage medium having a rewritable computer program stored thereon;

[0144] When the computer program is executed on a computer device, the computer device is caused to execute the above-mentioned pressure control method for a pressure sensor.

[0145] For example, computer-readable storage media can be read-only memory (ROM), random access memory (RAM), compact disc read-only memory (CD-ROM), magnetic tape, floppy disk, and optical data storage device.

[0146] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0147] It should be understood that determining B based on A does not mean determining B based solely on A. B can also be determined based on A and / or other information.

[0148] The above embodiments can be implemented in whole or in part through software, hardware, firmware, or any other combination. When implemented using software, the above embodiments can be implemented in whole or in part in the form of a computer program product. A computer program product includes one or more computer instructions or computer programs. When the computer instructions or computer program are loaded or executed on a computer, the processes or functions according to the embodiments of the present invention are generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via a wired network or / and a wireless network. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that contains a collection of one or more available media. The available media can be magnetic media (e.g., floppy disks, hard disks, tapes), optical media (e.g., DVDs), or semiconductor media. The semiconductor media can be a solid-state drive.

[0149] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed in the present invention can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the present invention.

[0150] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0151] In the several embodiments provided by the present invention, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of units is only one type. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0152] Units described as separate components may or may not be physically separate, and components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0153] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0154] Throughout this specification, references to terms such as "one embodiment," "example," or "specific example" indicate that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0155] In summary, compared with the prior art, the technical effects of the present invention are as follows:

[0156] 1. By establishing a digital twin model, the present invention can accurately divide the etching monitoring unit area of ​​the semiconductor substrate to be etched, thereby realizing fine control and real-time monitoring of complex grooves (such as V-shaped, U-shaped, and trapezoidal grooves), and improving the accuracy of the shape and depth of the etching grooves.

[0157] 2. The present invention collects and analyzes etching status data in real time. Through the etching angle deviation verification sub-strategy and the etching time deviation verification sub-strategy, the etching efficiency can be evaluated in real time. At the same time, the present invention monitors and adjusts the etching parameters in real time during the etching process to ensure that the roughness of the etched surface is controlled within the ideal range, thereby improving the stability of the etching quality, significantly shortening the etching time, and improving production efficiency.

[0158] 3. The present invention dynamically screens the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and implements the pressure control strategy. It can dynamically adjust the parameters according to the real-time data during the etching process, cope with the random changes and uncertainties in the etching process, and improve the flexibility and adaptability of the etching process.

[0159] The basic principles, main features, and advantages of the present invention are shown and described above. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are merely illustrative of the principles of the present invention. Various changes and modifications may be made to the present invention without departing from the spirit and scope of the present invention. Such changes and modifications are intended to fall within the scope of the present invention. The scope of protection claimed in the present invention is defined by the appended claims and their equivalents.

Claims

1. A pressure control method for a pressure sensor, characterized in that: The method comprises the following specific steps: S1: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, establish a digital twin model based on the target etching groove type, and divide the digital twin model into etching monitoring unit areas; S2: Open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the built-in pressure sensor of the fluoroplastic valve, and collect the etching status data of each etching groove on the semiconductor substrate to be etched in real time; S3: extracting etching status data of each lateral etching monitoring unit area group on the same groove depth layer, and importing the etching status data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer; S4: acquiring etching status data of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning equipment, importing the etching status data of each longitudinal etching monitoring unit area group into an etching quality check strategy, and calculating etching quality indexes of each adjacent groove depth layer; Calculate the etching quality index of each adjacent groove depth layer, specifically including: zl n ,zl n-1 are the etching quality indices of the nth and n-1th groove depth layers, respectively, c′ is the etching quality indices of the nth groove depth layer, In the vertical etching monitoring unit area group, The closest roughness value; C max ,C min They are The maximum and minimum roughness values ​​in the vertical etching monitoring unit area group; S5: Dynamically screen the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and control the pressure sensor to execute the pressure control strategy; Among them, S5 includes: S51: Construct an etching standard function F(n) based on the etching efficiency index and the etching quality index, F(n) = k1×xl n +k2×zl n , k1, k2 are the proportion coefficients of etching efficiency index and etching quality index respectively; S52: Preset an etching standard baseline. When it is monitored that the etching standard value of a groove depth layer is lower than the etching standard baseline, dynamically select the groove depth layer as an etching monitoring unit area to be adjusted, and simultaneously extract the etching efficiency index and etching quality index of the groove depth layer; S53: Preset an etching standard efficiency, and when the etching efficiency index of the groove depth layer is lower than the etching standard efficiency, control the direction in which the etching gas in the etching reaction chamber flows into the nozzle; S54: Preset the etching standard quality. When the etching quality index of the groove depth layer is lower than the etching standard quality, control the valve opening of the fluoroplastic valve to increase the pressure of the etching gas in the etching reaction chamber.

2. The pressure control method for a pressure sensor according to claim 1, characterized in that: S1 includes the following steps: S11: Identify a target etching groove type in an etching task of a semiconductor substrate to be etched, and establish a digital twin model according to the target etching groove type, wherein the target etching groove type includes: a V-shaped groove, a trapezoidal groove, a vertical groove, and a U-shaped groove; S12: Divide the digital twin model into etching monitoring unit areas according to the target etching groove type, as follows: When the target etching groove is a V-shaped groove, a trapezoidal groove, or a vertical groove, the groove depth of the target etching groove is extracted, and the groove depth is evenly divided into a plurality of groove depth layers; When the target etching groove is a U-shaped groove, the groove arc of the U-shaped groove is extracted, and the angle between the tangent line of each point on the groove arc and the center line of the U-shaped groove is calculated. The angle baseline difference range is set, and the points on the groove arc are divided into multiple arc segments according to the angle baseline difference range. Among them, the arc segments within the same angle baseline difference range constitute a groove depth layer; S13: extracting the total perimeter of the sidewall of each groove depth layer in the groove at the same time, and evenly dividing the total perimeter of the sidewall into regions of equal length; S14: In the digital twin model, multiple etching monitoring unit areas are obtained, where there are M on the nth groove depth layer. n An etching monitoring unit area.

3. The pressure control method for a pressure sensor according to claim 2, characterized in that: In S2, the etching state data includes: actual etching angle data, actual etching time data and etching surface morphology data of each etching monitoring unit area.

4. The pressure control method for a pressure sensor according to claim 3, characterized in that: S3 includes the following specific steps: S31: extracting etching state data of each lateral etching monitoring unit area group on the same groove depth layer; Wherein, each lateral etching monitoring unit area group includes: the mth adjacent areas on the same groove depth layer n and mth n -1 etching monitoring unit area, there are a total of I on the nth groove depth layer n A lateral etching monitoring unit area group, i n is the sequence of the lateral etching monitoring unit area group, S32: importing the etching status data of each lateral etching monitoring unit area group into an etching efficiency verification strategy, wherein the etching efficiency verification strategy includes: an etching angle deviation verification sub-strategy and an etching time deviation verification sub-strategy; The etching angle deviation checking sub-strategy is specifically as follows: s1 is the etching angle deviation coefficient; Respectively represent the index 2i n ,2i n The actual etching angle of the etching monitoring unit area of ​​-1; For index i n The average value of the actual etching angle of the lateral etching monitoring unit area group; For I n The average value of the actual etching angle of the lateral etching monitoring unit area group.

5. The pressure control method for a pressure sensor according to claim 4, characterized in that: S3 also includes the following specific steps: S33: Importing the etching status data of each lateral etching monitoring unit area group into the etching time deviation checking sub-strategy, wherein the etching time deviation checking sub-strategy is specifically as follows: Wherein, s2 is the etching time deviation coefficient; Respectively represent the index 2i n ,2i n -1 is the actual etching time of the etching monitoring unit area; For index i n The average actual etching time of the lateral etching monitoring unit area group; For I n The average actual etching time of each lateral etching monitoring unit area group; S34: extracting the etching angle deviation coefficient and the etching time deviation coefficient to obtain the etching efficiency index of each groove depth layer. The calculation strategy of the etching efficiency index is: xl n =α1×s1+α2×s2, where xl n is the etching efficiency index of the nth groove depth layer, α1 and α2 are the efficiency impact proportional coefficients of etching angle deviation and etching time deviation, respectively.

6. The pressure control method for a pressure sensor according to claim 5, characterized in that: S4 includes the following specific steps: S41: acquiring a high-resolution surface topography image of each longitudinal etching monitoring unit area group in adjacent groove depth layers by electronic scanning; S42: Preprocessing the SEM image using image processing software, including removing noise and smoothing the image, and extracting surface profile data from the preprocessed image using a profile extraction algorithm, wherein the surface profile data includes: the number of peaks and valleys and the height of each peak and valley; S43: According to S42, the roughness value of each vertical etching monitoring unit area group is calculated, wherein each vertical etching monitoring unit area group includes: adjacent m-th adjacent groove depth layers n and mth n -1 etching monitoring unit area; in N groove depth layers, at the mth n The etching monitoring unit area of ​​the column is composed of There are a total of vertical etching monitoring unit area groups on the nth groove depth layer. indivual, is the index of the vertical etching monitoring unit area group, The calculation strategy of the roughness value is: For the Roughness value of each longitudinal etching monitoring unit area group; No. The mth vertical etching monitoring unit area group n The number of peak points in an etching monitoring unit area is is the index; No. The mth vertical etching monitoring unit area group n -The number of peak points in one etching monitoring unit area is is the index; Respectively The height of the peaks and valleys; Respectively The height of the peaks and valleys.

7. A pressure control system for a pressure sensor, which is used to implement a pressure control method for a pressure sensor according to any one of claims 1 to 6, characterized in that: The system includes the following modules: Digital twin model construction module, unit area division module, etching state data acquisition module, etching efficiency evaluation module, etching quality evaluation module and pressure control strategy execution module; The digital twin model building module is used to identify a target etching groove shape in an etching task of a semiconductor substrate to be etched, and to establish a digital twin model according to the target etching groove shape; The unit area division module is used to divide the digital twin model into etching monitoring unit areas; The etching state data acquisition module is used to open the fluoroplastic valve, control the etching gas to flow into the etching reaction chamber through the pressure sensor built into the fluoroplastic valve, and collect the etching state data of each etching groove on the semiconductor substrate to be etched in real time; The etching efficiency evaluation module is used to extract the etching state data of each lateral etching monitoring unit area group on the same groove depth layer, and import the etching state data of each lateral etching monitoring unit area group into the etching efficiency verification strategy to obtain the etching efficiency index of each groove depth layer; The etching quality assessment module is used to obtain etching status data of each longitudinal etching monitoring unit area group in adjacent groove depth layers through an electronic scanning device, and import the etching status data of each longitudinal etching monitoring unit area group into the etching quality verification strategy to calculate the etching quality index of each adjacent groove depth layer; The pressure control strategy execution module dynamically selects the etching monitoring unit area to be adjusted according to the etching efficiency index and the etching quality index, and controls the pressure sensor to execute the pressure control strategy.

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