Inverted structure of radio frequency power amplifier

Abstract

The embodiment of the invention provides an upside-down mounting structure of a radio frequency power amplifier. A radio frequency power amplifier flip structure relates to the technical field of communication, and comprises a mainboard, a power amplifier daughter board, a digital intermediate frequency device, a power amplifier device, a printed circuit board (PCB) connector configured with interconnection lines, and a radiator. The PCB connector is configured between the first surface of the mainboard and the third surface of the power amplifier daughter board, and the interconnection line is connected with the first surface and the third surface; the first surface of the mainboard is provided with a digital intermediate frequency device, and the second surface of the mainboard is used for configuring an antenna array; the third surface of the power amplifier daughter board is provided with a power amplifier device, and the fourth surface of the power amplifier daughter board is provided with a radiator. By applying the scheme provided by the embodiment of the invention, the problems of heavy weight and high cost of the base station equipment can be solved.

Description

Technical Field

[0001] The present invention relates to the field of communication technology, and in particular to a flip-chip structure of a radio frequency power amplifier. Background Art

[0002] With the rapid development of 5G communication technology, low-cost, small and lightweight base station equipment has become the top priority for energy conservation and emission reduction green communications. Base station equipment is usually mainly composed of printed circuit boards, filters, antenna arrays, etc. Among them, the RF power amplifier is a core component, and its performance and excellent structural design directly determine the competitiveness of the whole machine.

[0003] Since the thermal resistance of power amplifier devices and digital intermediate frequency devices is in opposite directions, in traditional designs, in order to ensure good heat dissipation conditions for the devices, the power amplifier devices and digital intermediate frequency devices are generally configured on both sides of the printed circuit board, and a separate antenna board is required to configure the antenna array. The printed circuit board and the antenna board are connected through an RF connector. Since multiple sets of RF connectors and special antenna boards are required in traditional designs, the base station equipment is heavy and costly. Summary of the invention

[0004] The purpose of the embodiment of the present invention is to provide a flip-chip structure of a radio frequency power amplifier to solve the problem of heavy weight and high cost of base station equipment. The specific technical solution is as follows:

[0005] In a first aspect of the present invention, a radio frequency power amplifier flip-chip structure is first provided, wherein the radio frequency power amplifier flip-chip structure comprises a main board, a power amplifier sub-board, a digital intermediate frequency device, a power amplifier device, a printed circuit board PCB connector configured with interconnection lines, and a heat sink;

[0006] The PCB connector is configured between the first surface of the main board and the third surface of the amplifier sub-board, and the interconnection line connects the first surface and the third surface;

[0007] The first surface of the mainboard is used to configure the digital intermediate frequency device, and the second surface of the mainboard is used to configure the antenna element;

[0008] The power amplifier device is configured on the third surface of the power amplifier sub-board, and the heat sink is configured on the fourth surface of the power amplifier sub-board.

[0009] In a possible embodiment, the PCB connector surrounds the power amplifier daughter board in a closed manner.

[0010] In a possible embodiment, the interconnection line is embedded in the PCB connector;

[0011] and / or

[0012] The interconnection line is configured on the surface layer of the PCB connector.

[0013] In a possible embodiment, the interconnection line includes at least one of the following connection lines: a power line, a control line, a radio frequency signal interconnection line, and a connection line for performing signal integrity matching processing.

[0014] In a possible embodiment, there are heat dissipation holes on the power amplifier sub-board for heat dissipation.

[0015] In a possible embodiment, the RF power amplifier flip-chip structure further includes an antenna array, and the antenna array is disposed on the second surface of the mainboard.

[0016] In a second aspect of the implementation of the present invention, there is also provided an electronic device, comprising a radio frequency power amplifier flip-chip structure, wherein the radio frequency power amplifier flip-chip structure is any one of the radio frequency power amplifier flip-chip structures of the first aspect described above.

[0017] Beneficial effects of the embodiments of the present invention:

[0018] The implementation method of the flip-chip structure of the RF power amplifier provided by the embodiment of the present invention is that the PCB connector is configured between the first surface of the mainboard and the third surface of the power amplifier sub-board, the interconnection line connects the first surface and the third surface, and the first surface of the mainboard is configured with a digital intermediate frequency device, the third surface of the power amplifier sub-board is configured with a power amplifier device, and the fourth surface of the power amplifier sub-board is configured with a heat sink. Therefore, it is possible to have a good heat dissipation effect while amplifying the power of the RF signal. In addition, since the power amplifier device on the power amplifier sub-board is configured on the same side of the printed circuit board as the digital intermediate frequency device in a flip-chip manner, under the premise of ensuring that the power amplifier device and the digital intermediate frequency device dissipate heat in the same direction, the second surface of the mainboard is vacated for configuring the antenna array, and a special antenna board is no longer required to configure the antenna array, and there is no need to use an RF connector to connect the antenna board, thereby reducing the weight and cost of the base station equipment.

[0019] Of course, it is not necessary to achieve all of the advantages described above at the same time to implement any product or method of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other embodiments can also be obtained based on these drawings.

[0021] Figure 1 It is a cross-sectional schematic diagram of a base station device in the related art;

[0022] Figure 2 It is a structural schematic diagram of a radio frequency power amplifier structure in the related art;

[0023] Figure 3 A schematic diagram of a flip-chip structure inside a radio frequency power amplifier in the related art;

[0024] Figure 4 A schematic structural diagram of a first RF power amplifier flip-chip structure provided by an embodiment of the present invention;

[0025] Figure 5 A top view of a PCB connector provided by an embodiment of the present invention;

[0026] Figure 6 A schematic diagram of the structure of a second flip-chip structure of a radio frequency power amplifier provided by an embodiment of the present invention;

[0027] Figure 7 A front view of a first PCB connector provided by an embodiment of the present invention;

[0028] Figure 8 A front view of a second PCB connector provided by an embodiment of the present invention;

[0029] Fig. 9 A schematic structural diagram of a third RF power amplifier flip-chip structure provided by an embodiment of the present invention;

[0030] Fig.10 A cross-sectional schematic diagram of a base station device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0031] In the embodiments of the present invention, the term "and / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B may represent three situations: A exists alone, A and B exist at the same time, and B exists alone. The character " / " generally indicates that the associated objects before and after are in an "or" relationship.

[0032] In the embodiments of the present invention, the term "plurality" refers to two or more than two, and other quantifiers are similar.

[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] In addition, the textures and colors of different devices in the drawings in the embodiments of the present invention are only used to distinguish the devices, and the embodiments of the present invention do not limit the textures and colors of the devices.

[0035] The embodiment of the present invention provides a flip-chip structure of a radio frequency power amplifier, which is used to solve the problems of heavy weight and high cost of base station equipment.

[0036] Among them, the RF power amplifier flip-chip structure and the electronic device are based on the same inventive concept. Since the principles of solving problems by the RF power amplifier flip-chip structure and the electronic device are similar, the implementation of the RF power amplifier flip-chip structure and the electronic device can refer to each other, and the repeated parts will not be repeated.

[0037] In the related art, since the power amplifier device in the RF power amplifier dissipates heat from the bottom toward the mainboard, and the digital intermediate frequency device dissipates heat from the shell in the opposite direction, the power amplifier device and the digital intermediate frequency device have opposite heat dissipation directions. In order to facilitate the heat dissipation of the devices, the power amplifier device and the digital intermediate frequency device are usually configured on both sides of the printed circuit board, and a separate antenna board is required to configure the antenna array. The printed circuit board and the antenna board (including the antenna array and the reflector) are connected through an RF connector. Specifically, the structure of the RF power amplifier in the related art can be seen below Figure 2 .

[0038] See also Figure 1 , is a cross-sectional schematic diagram of a base station device in the related art. The base station device includes a printed board 110, a radio frequency connector 120, an antenna board 130 and a filter 200. The printed board 110 includes a main board and a power amplifier sub-board.

[0039] It can be seen that currently the base station device is configured with a printed circuit board 110 and an antenna board 130 , and the two need to be connected via a radio frequency connector 120 .

[0040] See also Figure 2 , which is a schematic diagram of a radio frequency power amplifier structure in the related art. As can be seen from the figure, the radio frequency power amplifier structure includes a main board 111, a power amplifier sub-board 112, a power amplifier device 140, a heat sink 150, a heat dissipation hole 160, and a copper block 190. The direction of the arrow indicates the heat dissipation direction of the power amplifier device 140, and the heat dissipation direction of the power amplifier device 140 is to dissipate heat from the bottom toward the main board 111.

[0041] Since the RF connector 120 is heavy and expensive, in order to reduce the weight and cost of the base station equipment, in the related technology, the power amplifier device 140 is adjusted from the traditional bottom heat dissipation to the top heat dissipation. In the traditional heat dissipation method, the power amplifier device 140 achieves heat dissipation through the thermal pad and the copper block 190 embedded in the board. In the top heat dissipation method, the power amplifier device 140 itself is made into a shell for heat dissipation. Its heat dissipation direction is opposite to that of the traditional heat dissipation method. Gold wires are made inside the power amplifier device 140, and then the external pins are led to the bottom surface of the power amplifier device 140 and interconnected with the power amplifier sub-board 112, so as to achieve the effect of top heat dissipation of the power amplifier device 140. The specific structure can be seen below Figure 3 .

[0042] See also Figure 3 , which is a schematic diagram of a flip-chip structure inside an RF power amplifier in the related art. As can be seen from the figure, the flip-chip structure of the RF power amplifier includes a main board 111, a power amplifier sub-board 112, a power amplifier device 140, and a heat sink 150. The direction of the arrow indicates the heat dissipation direction of the power amplifier device 140, and the heat dissipation direction of the power amplifier device 140 is to dissipate heat from the top in the opposite direction of the main board 111.

[0043] Figure 3 Although the method shown can achieve top heat dissipation, it is difficult to meet the current mass production needs due to the immature internal flip-chip process. In addition, since the internal structure of the power amplifier device 140 changes, the power amplifier device 140 needs to be customized separately, which will also lead to increased costs.

[0044] In the above Figure 2 In the RF power amplifier structure shown, since multiple sets of RF connectors 120 and dedicated antenna boards 130 are required, the base station equipment is heavy and has a high cost.

[0045] In order to solve the problem of heavy weight and high cost of base station equipment, the above-mentioned Figure 3 The internal flip-chip structure of the RF power amplifier shown. In the internal flip-chip structure of the RF power amplifier, when the top shell of the power amplifier device dissipates heat, the heat sink 150 directly contacts the power amplifier device 140, which will generate mechanical stress on the power amplifier device 140, which is easy to cause device failure. The power amplifier device 140 is an electromagnetic device, and a certain air cavity is required directly above it. When the top shell of the power amplifier device 140 dissipates heat, the main board 111 and the power amplifier sub-board 112 need to be hollowed out, and the size of the hollowing needs to be designed and evaluated, otherwise it will cause the power amplifier device 140 to fail. Therefore, there are high requirements for the thickness of the main board 111 and the power amplifier sub-board 112.

[0046] Based on this, an embodiment of the present invention provides a flip-chip structure of a radio frequency power amplifier, see Figure 4, which is a structural schematic diagram of the first RF power amplifier flip-chip structure provided in an embodiment of the present invention, the RF power amplifier flip-chip structure includes a main board 111, a power amplifier sub-board 112, a digital intermediate frequency device 170, a power amplifier device 140, a PCB (Printed Circuit Board) connector 180 configured with interconnection lines, and a heat sink 150.

[0047] See also Figure 4 The PCB connector 180 is disposed between the first surface of the main board 111 and the third surface of the amplifier sub-board 112, and the interconnection line connects the first surface and the third surface.

[0048] Among them, the main board 111 carries the functions of intermediate frequency chips such as FPGA (Field-Programmable Gate Array), and the power amplifier sub-board 112 carries the functions of transmitting and receiving link signal amplification. The PCB connector 180 is used to connect the main board 111 and the power amplifier sub-board 112, and plays a supporting role for the main board 111 and the power amplifier sub-board 112. The direction of the arrow indicates the heat dissipation direction of the power amplifier device 140, and the heat dissipation direction of the power amplifier device 140 is to dissipate heat from the top in the opposite direction of the main board 111.

[0049] Specifically, in Figure 4 In the figure, the first surface of the main board 111 refers to the upper surface of the main board 111, the third surface of the power amplifier sub-board 112 refers to the lower surface of the power amplifier sub-board 112, the PCB connector 180 is arranged between the upper surface of the main board 111 and the lower surface of the power amplifier sub-board 112, and the interconnection line connects the upper surface of the main board 111 and the lower surface of the power amplifier sub-board 112. The interconnection line connection includes a signal connection and a power connection.

[0050] In a possible embodiment, the interconnection line includes at least one of the following connection lines: a power line, a control line, a radio frequency signal interconnection line, and a connection line for performing signal integrity matching processing.

[0051] The power line is used to connect the power supply to power the flip-chip structure of the RF power amplifier. The control line is used to transmit the control signal from the main board 111 to the power amplifier sub-board 112. The RF signal interconnection line is used to transmit the RF signal.

[0052] By selecting the above embodiment, since the interconnection line includes at least one of a power line, a control line, a radio frequency signal interconnection line, and a connection line for signal integrity matching processing, the main board 111 and the power amplifier sub-board 112 can be interconnected to amplify the power of the radio frequency signal.

[0053] The dimensions of the main board 111 and the power amplifier sub-board 112 may be the same or different. For example, the dimensions of the main board 111 are: length 60 cm, width 50 cm, and the dimensions of the power amplifier sub-board 112 are: length 60 cm, width 50 cm; or the dimensions of the main board 111 are: length 60 cm, width 50 cm, and the dimensions of the power amplifier sub-board 112 are: length 45 cm, width 35 cm.

[0054] In a possible embodiment, the size of the power amplifier sub-board 112 is smaller than that of the main board 111. Exemplarily, the size of the main board 111 is: 60 cm in length and 50 cm in width, and the size of the power amplifier sub-board 112 is: 45 cm in length and 35 cm in width.

[0055] It should be noted that the shapes of the main board 111 and the power amplifier sub-board 112 may be rectangular or other shapes, and the embodiment of the present invention does not limit the shapes of the main board 111 and the power amplifier sub-board 112 .

[0056] The first surface of the mainboard 111 is configured with a digital intermediate frequency device 170 , and the second surface of the mainboard 111 is used to configure an antenna element 131 .

[0057] Specifically, the digital intermediate frequency device 170 is mainly used to implement protocol conversion, modulation and demodulation, high-speed data transmission and signal processing, switch control of other devices, and real-time monitoring. Figure 4 In the embodiment, the digital intermediate frequency device 170 is disposed on the upper surface of the mainboard 111 .

[0058] In a possible embodiment, the RF power amplifier flip-chip structure further includes an antenna element 131 , and the antenna element 131 is disposed on the second surface of the mainboard 111 .

[0059] Among them, Figure 4 In the figure, the second surface of the main board 111 refers to the lower surface of the main board 111.

[0060] Specifically, the antenna array 131 is an array composed of multiple antennas, which is used to receive and send radio signals. The antennas in each antenna array 131 are arranged in a specific geometric shape. By properly controlling the phase and amplitude of each antenna, the directionality control of the reception and transmission of electromagnetic waves can be achieved. An antenna array can be set every first preset distance, for example, an antenna array can be set every 10 centimeters.

[0061] It should be noted that the arrangement of the antennas in the antenna array 131 and the first preset distance are preset by technicians with professional knowledge based on actual needs and / or experience.

[0062] By selecting the above embodiment, since the antenna array 131 is set on the second surface of the mainboard 111, there is no need to separately set up the antenna board 130 for configuring the antenna array 131, and there is no need to use the RF connector 120 to connect the antenna board 130, thereby saving the cost required for the antenna board 130 and the RF connector 120, and reducing the weight of the antenna board 130 and the RF connector 120, thereby solving the problem of heavy weight and high cost of the base station equipment.

[0063] The third surface of the power amplifier sub-board 112 is configured with a power amplifier device 140 , and the fourth surface of the power amplifier sub-board 112 is configured with a heat sink 150 .

[0064] Specifically, in Figure 4 In the figure, the third surface of the power amplifier sub-board 112 refers to the lower surface of the power amplifier sub-board 112, and the lower surface of the power amplifier sub-board 112 is configured with a power amplifier device 140, and the power amplifier device 140 can be a PA (Power Amplifier). The fourth surface of the power amplifier sub-board 112 refers to the upper surface of the power amplifier sub-board 112, and the upper surface of the power amplifier sub-board 112 is configured with a heat sink 150.

[0065] The technical solution provided by the embodiment of the present invention can be applied to the flip-chip structure of the radio frequency power amplifier of various systems, especially the 5G system. For example, the applicable system can be the global system of mobilecommunication (GSM) system, code division multiple access (CDMA) system, wideband code division multiple access (WCDMA) general packet radio service (GPRS) system, long term evolution (LTE) system, LTE frequency division duplex (FDD) system, LTE time division duplex (TDD) system, long term evolution advanced (LTE-A) system, universal mobile telecommunication system (UMTS), worldwide interoperability for microwave access (WiMAX) system, 5G new air interface (NR) system, etc. These various systems include terminal equipment and network equipment. The system can also include a core network part, such as an evolved packet system (EPS), a 5G system (5GS), etc.

[0066] In the above embodiment, since the PCB connector 180 is arranged between the first surface of the main board 111 and the third surface of the power amplifier sub-board 112, the interconnection line connects the first surface and the third surface, and the digital intermediate frequency device 170 is arranged on the first surface of the main board 111, the power amplifier device 140 is arranged on the third surface of the power amplifier sub-board 112, and the heat sink 150 is arranged on the fourth surface of the power amplifier sub-board 112, it is possible to have a good heat dissipation effect while amplifying the power of the radio frequency signal. In addition, since the power amplifier device 140 on the power amplifier sub-board 112 is arranged on the same side of the printed board 110 with the digital intermediate frequency device 170 in a flip-chip manner, under the premise of ensuring that the power amplifier device 140 and the digital intermediate frequency device 170 are radiated in the same direction, the second surface of the main board 111 is vacated for configuring the antenna element 131, and a special antenna board 130 is no longer required to configure the antenna element 131, and there is no need to use the radio frequency connector 120 to connect the antenna board 130, thereby reducing the weight and cost of the base station equipment.

[0067] In one possible embodiment, the PCB connector 180 encloses the surround power amplifier daughter board 112 .

[0068] See also Figure 5 , is a top view of a PCB connector provided in an embodiment of the present invention. It can be seen from the figure that the PCB connector 180 is in the shape of a closed ring.

[0069] The PCB connector 180 may be made of a low-cost printed circuit board. In addition, in order to prevent the radio frequency signals between different channels from interfering with each other and the radio frequency signals from interfering with the digital signals, the PCB connector 180 is enclosed around the power amplifier sub-board 112 .

[0070] The PCB connector 180 can be enclosed around the power amplifier sub-board 112 in the following two ways. In the first way, the PCB connector 180 is enclosed and enclosed along the edge of the power amplifier sub-board 112, for example, the part of the power amplifier sub-board 112 that is equipped with the power amplifier device 140 and the other parts of the power amplifier sub-board 112 that are not equipped with the power amplifier device 140 are all enclosed and enclosed by the PCB connector 180. In the second way, the PCB connector 180 is not enclosed around the edge of the power amplifier sub-board 112, for example, the PCB connector 180 only encloses the part of the power amplifier sub-board 112 that is equipped with the power amplifier device 140, and the other parts of the power amplifier sub-board 112 are not enclosed by the PCB connector 180.

[0071] It should be noted that the digital intermediate frequency device 170 on the mainboard 111 is always outside the closed PCB connector 180 .

[0072] In one possible embodiment, see Figure 6 , which is a schematic diagram of a second RF power amplifier flip-chip structure provided by an embodiment of the present invention. The RF power amplifier flip-chip structure includes a main board 111, a power amplifier sub-board 112, a digital intermediate frequency device 170, a power amplifier device 140, a PCB connector 180 with interconnection lines, and a heat sink 150.

[0073] The size of the power amplifier sub-board 112 is smaller than that of the main board 111 , and the PCB connector 180 is closed and surrounded along the edge of the power amplifier sub-board 112 .

[0074] It should be noted that Figure 6 The PCB connector 180 is enclosed and surrounded along the edge of the power amplifier sub-board 112, which corresponds to the above-mentioned method one. This is only one way for the PCB connector 180 to be enclosed and surround the power amplifier sub-board 112. Other methods can also be used to make the PCB connector 180 enclosed and surround the power amplifier sub-board 112, such as the above-mentioned method two.

[0075] By selecting the above embodiment, since the PCB connector 180 encloses and surrounds the power amplifier sub-board 112, it can prevent the RF signals between different channels from interfering with each other and the RF signals from interfering with the digital signals, thus achieving a shielding effect. In addition, since the PCB connector 180 can achieve a shielding effect, it is not necessary to set up a separate RF shielding cover, saving the cost required for the RF shielding cover and reducing the weight of the RF shielding cover, thereby solving the problem of heavy weight and high cost of the base station equipment.

[0076] In one possible embodiment, the interconnect is embedded in the PCB connector 180;

[0077] and / or

[0078] The interconnection lines are arranged on the surface layer of the PCB connector 180 .

[0079] See also Figure 7 , which is a front view of the first PCB connector provided in an embodiment of the present invention. It can be seen from the figure that the interconnection line is embedded in the PCB connector 180.

[0080] See also Figure 8 , which is a front view of a second PCB connector provided in an embodiment of the present invention. It can be seen from the figure that the interconnection wires are arranged on the surface layer of the PCB connector 180.

[0081] Specifically, it can be determined whether to embed the interconnection lines in the PCB connector 180, or to configure the interconnection lines on the surface of the PCB connector 180, or to embed a portion of the interconnection lines in the PCB connector 180 and configure the other portion of the interconnection lines on the surface of the PCB connector 180, according to the routing design of the interconnection lines. For example, if the routing design of the interconnection lines is relatively simple, in order to protect the interconnection lines, it is selected to embed the interconnection lines in the PCB connector 180; if the routing design of the interconnection lines is relatively complex, in order to facilitate rapid determination of the fault location of the interconnection lines, it is selected to configure the interconnection lines on the surface of the PCB connector 180; if the routing design of a portion of the interconnection lines is relatively simple, and the routing design of the other portion of the interconnection lines is relatively complex, the interconnection lines with the relatively simple routing design are embedded in the PCB connector 180, and the interconnection lines with the relatively complex routing design are configured on the surface of the PCB connector 180.

[0082] By selecting the above embodiment, it can be decided whether to embed the interconnection wires in the PCB connector 180, or to configure the interconnection wires on the surface of the PCB connector 180, or to embed part of the interconnection wires in the PCB connector 180 and configure the other part of the interconnection wires on the surface of the PCB connector 180, according to the routing design of the interconnection wires. By embedding the interconnection wires in the PCB connector 180, it is possible to avoid exposing the interconnection wires to the external environment, thereby protecting the interconnection wires. By configuring the interconnection wires on the surface of the PCB connector 180, when a fault occurs in the interconnection wires, the fault location can be quickly determined and the fault can be repaired.

[0083] In a possible embodiment, there are heat dissipation holes 160 on the power amplifier sub-board 112 for dissipating heat.

[0084] See also Fig. 9 , is a schematic diagram of a third RF power amplifier flip-chip structure provided by an embodiment of the present invention, and Figure 4 In comparison, there are 6 heat dissipation holes 160 for heat dissipation on the power amplifier sub-board 112. Since the power amplifier device 140 is configured on the third surface of the power amplifier sub-board 112, one end of the heat dissipation hole 160 is connected to the heat sink 150, and the other end is connected to the power amplifier device 140, which is convenient for heat dissipation of the power amplifier device 140. In addition, the direction of the arrow indicates the heat dissipation direction of the power amplifier device 140, and the heat dissipation direction of the power amplifier device 140 is to dissipate heat from the bottom in the opposite direction of the main board 111.

[0085] Specifically, the heat dissipation holes 160 may be arranged at a second preset distance, for example, the heat dissipation holes 160 may be arranged at a distance of 5 centimeters.

[0086] It should be noted that the second preset distance is preset by a technician with professional knowledge based on actual needs and / or experience. Fig. 9 The number of the heat dissipation holes 160 being six is ​​only an embodiment, and the number of the heat dissipation holes 160 may also be other numbers. The embodiment of the present invention does not limit the number of the heat dissipation holes 160 .

[0087] The above embodiment is selected. Since there are heat dissipation holes 160 for heat dissipation on the power amplifier sub-board 112, the power amplifier device 140 is configured on the third surface of the power amplifier sub-board 112. One end of the heat dissipation hole 160 is connected to the heat sink 150, and the other end is connected to the power amplifier device 140, which can facilitate the heat dissipation of the power amplifier device 140 and achieve better heat dissipation effect.

[0088] See also Fig.10 , is a cross-sectional schematic diagram of a base station device provided by an embodiment of the present invention. The base station device includes a printed circuit board 110 and an antenna element 131. The printed circuit board 100 includes a main board 111 and a power amplifier sub-board 112.

[0089] An embodiment of the present invention further provides an electronic device, including a radio frequency power amplifier flip-chip structure, wherein the radio frequency power amplifier flip-chip structure is any of the above-mentioned radio frequency power amplifier flip-chip structures.

[0090] In the above embodiment, since the PCB connector 180 is arranged between the first surface of the main board 111 and the third surface of the power amplifier sub-board 112, the interconnection line connects the first surface and the third surface, and the digital intermediate frequency device 170 is arranged on the first surface of the main board 111, the power amplifier device 140 is arranged on the third surface of the power amplifier sub-board 112, and the heat sink 150 is arranged on the fourth surface of the power amplifier sub-board 112, it is possible to have a good heat dissipation effect while amplifying the power of the radio frequency signal. In addition, since the power amplifier device 140 on the power amplifier sub-board 112 is arranged on the same side of the printed board 110 with the digital intermediate frequency device 170 in a flip-chip manner, under the premise of ensuring that the power amplifier device 140 and the digital intermediate frequency device 170 are radiated in the same direction, the second surface of the main board 111 is vacated for configuring the antenna element 131, and a special antenna board 130 is no longer required to configure the antenna element 131, and there is no need to use the radio frequency connector 120 to connect the antenna board 130, thereby reducing the weight and cost of the base station equipment.

[0091] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

[0092] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0093] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0094] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A radio frequency power amplifier flip-chip structure, characterized in that: The radio frequency power amplifier flip-chip structure includes a main board, a power amplifier sub-board, a digital intermediate frequency device, a power amplifier device, a printed circuit board PCB connector configured with interconnection lines, and a heat sink; The PCB connector is configured between the first surface of the main board and the third surface of the amplifier sub-board, and the interconnection line connects the first surface and the third surface; The first surface of the mainboard is used to configure the digital intermediate frequency device, and the second surface of the mainboard is used to configure the antenna element; The power amplifier device is configured on the third surface of the power amplifier sub-board, and the heat sink is configured on the fourth surface of the power amplifier sub-board.

2. The RF power amplifier flip-chip structure according to claim 1, characterized in that: The PCB connector surrounds the power amplifier daughter board in a closed manner.

3. The radio frequency power amplifier flip-chip structure according to claim 1 or 2, characterized in that: The interconnection line is embedded in the PCB connector; and / or The interconnection line is configured on the surface layer of the PCB connector.

4. The radio frequency power amplifier flip-chip structure according to claim 1 or 2, characterized in that: The interconnection line includes at least one of the following connection lines: a power line, a control line, a radio frequency signal interconnection line, and a connection line used for signal integrity matching processing.

5. The radio frequency power amplifier flip-chip structure according to claim 1 or 2, characterized in that: The power amplifier sub-board has heat dissipation holes for heat dissipation.

6. The radio frequency power amplifier flip-chip structure according to claim 1 or 2, characterized in that: The radio frequency power amplifier also includes an antenna array, and the antenna array is arranged on the second surface of the mainboard.

7. An electronic device, characterized in that: It comprises a radio frequency power amplifier flip-chip structure, wherein the radio frequency power amplifier flip-chip structure is the radio frequency power amplifier flip-chip structure of any one of claims 1-6.

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