Photosensitive sensor and preparation method thereof
By designing outwardly projecting support blocks and groove structures in the photosensitive sensor, the problems of small photosensitive angles and complex production of traditional photosensitive sensors are solved, and higher measurement accuracy and sensitivity are achieved, and production costs are reduced.
Patent Information
- Application Number
- CN202411979930.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-04-18
AI Technical Summary
Traditional photosensitive sensors have small angles to obtain light intensity, inflexible, long detection cycle, complex preparation method, and high cost.
A photosensitive sensor is designed, with a photosensitive film arranged on the outside of the support block, which protrudes outward, enlarges the photosensitive angle, and uses an arched support block and groove structure to improve the strength of the mechanical structure and measurement accuracy.
By increasing the photosensitive angle and increasing the mechanical structure intensity, the photosensitive sensor can more sensitively capture changes in light intensity, improve measurement accuracy and sensitivity, while simplifying the preparation method, reducing costs, and being suitable for mass production.
Smart Images
Figure CN119855294A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of micro-mechanical sensing technology, and in particular to a photosensitive sensor and a preparation method thereof. Background Art
[0002] Photosensors are one of the most common sensors. There are many types of them, including: phototubes, photomultiplier tubes, photoresistors, phototransistors, solar cells, infrared sensors, ultraviolet sensors, fiber-optic photoelectric sensors, color sensors, CCD and CMOS image sensors, etc. Photosensors are one of the most produced and widely used sensors. They play a very important role in automatic control and non-electrical measurement technology. The simplest photosensor is a photoresistor, which is a resistor made by the photoelectric effect of semiconductors and whose resistance value changes with the intensity of incident light.
[0003] When the light intensity and position change, the resistance value of the photosensor will also change accordingly. Traditional photosensors have a small angle to obtain light intensity, are not flexible, have a long detection cycle, are complex to prepare, and are costly. Summary of the invention
[0004] The purpose of the present invention is to provide a photosensor and a preparation method thereof, wherein a photosensitive film is arranged on the outside of a support block, and the support block protrudes outward, thereby increasing the photosensitivity angle and improving the measurement accuracy.
[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:
[0006] One aspect of an embodiment of the present invention provides a photosensor and a method for preparing the same, the photosensor comprising: a substrate; a first electrode, the first electrode being arranged on the substrate, the first electrode comprising a first connecting block, a second connecting block and a supporting block, the first side and the second side of the supporting block being respectively connected to the first connecting block and the second connecting block, the supporting block protruding outward; a second electrode, the second electrode being arranged on the substrate, the second electrode comprising a first side edge and a second side edge, the first electrode being arranged between the first side edge and the second side edge; a photosensitive film, the photosensitive film being arranged on the outer side of the supporting block.
[0007] In some embodiments, a groove is formed in the middle of the base, and the support block is disposed on the groove.
[0008] In some embodiments, the first connecting block includes a first conductor and a second conductor, the first end of the first conductor is connected to the first end of the first side of the supporting block, the second end of the first conductor is connected to the first end of the second conductor, and the second end of the second conductor extends toward the first end of the substrate; the second connecting block includes a third conductor and a fourth conductor, the first end of the third conductor is connected to the second end of the second side of the supporting block, the second end of the third conductor is connected to the first end of the fourth conductor, and the second end of the fourth conductor extends toward the second end of the substrate.
[0009] In some embodiments, the support block is arched.
[0010] In some embodiments, the second end of the first conductor and the first end of the second conductor are disposed below the middle of the first side of the support block, and the second end of the third conductor and the first end of the fourth conductor are disposed below the middle of the second side of the support block.
[0011] In some embodiments, the second electrode also includes a third side and a fourth side, two ends of the third side are respectively connected to the first end of the first side and the first end of the second side, two ends of the fourth side are respectively connected to the second end of the first side and the second end of the second side, and the first electrode is arranged in an area enclosed by the first side, the second side, the third side and the fourth side.
[0012] In some embodiments, a photoresist is disposed on the outer side of the photosensitive film.
[0013] One aspect of an embodiment of the present invention provides a method for preparing a photosensor, which is applied to the photosensor as described above, and includes: providing a substrate, etching a groove on the substrate; filling a first sacrificial layer in the groove, and performing a CMP flattening treatment; preparing a planar electrode layer on the first sacrificial layer and the substrate; forming a second sacrificial layer on the first sacrificial layer and the planar electrode layer in the middle of the substrate through a photolithography process and a thermal reflow process; sequentially preparing a supporting electrode layer and a photosensitive film on the second sacrificial layer; and removing the first sacrificial layer and the second sacrificial layer.
[0014] In some embodiments, in preparing a planar electrode layer on a first sacrificial layer and a substrate, the preparation method further includes: depositing a metal film on the first sacrificial layer and the substrate; coating a photoresist on the metal film and patterning the photoresist through a mask; patterning the metal film through the photoresist; and removing the photoresist.
[0015] In some embodiments, in sequentially preparing a supporting electrode layer and a photosensitive film on a second sacrificial layer, the preparation method includes: depositing a metal film on the second sacrificial layer; depositing an adhesion layer on the metal film; depositing a photosensitive film on the adhesion layer; coating a photoresist on the photosensitive film, and patterning the photoresist through a mask; and patterning the metal film and the photosensitive film through the photoresist.
[0016] A photosensor and a preparation method thereof according to an embodiment of the present invention have at least the following beneficial effects: the arched support block structure and the groove structure of the photosensor of the present invention not only enhance the strength of the mechanical structure, but also can capture the changes in light intensity in the measurement environment at a large angle; air medium is between the arched support block and the groove, and the holes are filled with air medium to minimize dielectric loss; the first electrode and the second electrode form a GSG interface, and the changes in electrical signals are measured through the GSG adapter to convert them into changes in light intensity, thereby improving the accuracy and sensitivity of the sensor measurement and making the measurement closer to the true value; in addition, the photosensor is small and strong, and the preparation method is simple, low-cost, and can be mass-produced.
[0017] It is to be understood that the foregoing general description and the following detailed description are exemplary only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0019] Figure 1 is a schematic diagram of a three-dimensional structure of a photosensor according to an embodiment;
[0020] Figure 2 is a schematic diagram of a top cross-sectional structure of a photosensor according to an embodiment;
[0021] Figure 3 Schematic diagram of the process of preparing a photosensor according to an embodiment.
[0022] The description of the accompanying drawings is as follows: 1. substrate; 2. first electrode; 3. first connecting block; 4. second connecting block; 5. supporting block; 6. second electrode; 7. photosensitive film; 8. groove; 9. first conductor; 10. second conductor; 11. third conductor; 12. fourth conductor; 13. photoresist; 14. first sacrificial layer; 15. second sacrificial layer. DETAILED DESCRIPTION
[0023] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0024] In the description of the present invention, it should be understood that the terms "center", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.
[0025] The terms "first", "second", and "third" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", and "third" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.
[0026] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0027] The process steps described in the description are only exemplary and do not necessarily include all contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps can be decomposed, while some operations / steps can be combined or partially combined, so the actual execution order may change according to the actual situation.
[0028] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these example embodiments are provided so that the description of the present disclosure will be more comprehensive and complete and the concepts of the example embodiments will be fully conveyed to those skilled in the art. The accompanying drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the figures represent the same or similar parts, and thus their repeated description will be omitted.
[0029] Traditional photosensitive sensors have a small angle for obtaining light intensity, lack flexibility, have a long detection cycle, a complex preparation method, and high cost. Therefore, the present application provides a photosensitive sensor and a preparation method thereof, which increases the angle for obtaining light intensity, improves the measurement accuracy and sensitivity of the sensor, and has a simple preparation method and low cost.
[0030] The following is a brief description of the photosensitive sensor of the present application embodiment:
[0031] According to some embodiments, Figure 1 to Figure 2 As shown, the present application provides a photosensor, the photosensor comprising:
[0032] Base 1;
[0033] A first electrode 2, wherein the first electrode 2 is disposed on the substrate 1, and comprises a first connecting block 3, a second connecting block 4 and a supporting block 5, wherein a first side and a second side of the supporting block 5 are connected to the first connecting block 3 and the second connecting block 4 respectively, and the supporting block 5 protrudes outwards;
[0034] A second electrode 6, the second electrode 6 is disposed on the substrate 1, the second electrode 6 comprises a first side edge and a second side edge, and the first electrode 2 is disposed between the first side edge and the second side edge;
[0035] The photosensitive film 7 is arranged on the outer side of the supporting block 5 .
[0036] The outward protruding structure of the photosensor of the present application not only enhances the strength of the mechanical structure, but also can capture changes in light intensity in the measurement environment at a maximum angle of 180°. The first side of the second electrode 6, the first electrode 2, and the second side of the second electrode 6 form a GSG interface, and changes in electrical signals are measured through the GSG adapter to be converted into changes in light intensity, thereby improving the sensitivity of sensor measurements.
[0037] The following is combined with the appendix of this manual Figures 1 to 3 , the photosensor of the present application is further elaborated in detail.
[0038] According to some embodiments, Figures 1 to 3 As shown, a groove 8 is opened in the middle of the base 1 , and the support block 5 is arranged on the groove 8 .
[0039] Specifically, the groove 8 is configured to have a length×width of 500um×500um and a depth of 50μm, and an angle between the side wall of the groove 8 and the bottom of the groove is between 90° and 100°.
[0040] Specifically, Figure 1 , Figure 3 As shown, the support block 5 is arched.
[0041] The arched support block 5 structure and the groove 8 structure of the photosensitive sensor of the present application not only enhance the strength of the mechanical structure, but also can capture the changes in light intensity in the measurement environment at a large angle. The air medium is between the arched support block 5 and the groove 8. By filling the holes with the air medium, the medium loss can be minimized to the greatest extent, thereby improving the accuracy of the sensor measurement and making the measurement closer to the true value.
[0042] In other embodiments, the support block 5 may also be semicircular, semi-elliptical or arc-shaped, which is not limited in the present application.
[0043] According to some embodiments, Figure 1 to Figure 2 As shown, the first connection block 3 includes a first conductor 9 and a second conductor 10, a first end of the first conductor 9 is connected to a first end of a first side of the support block 5, a second end of the first conductor 9 is connected to a first end of the second conductor 10, and a second end of the second conductor 10 extends toward a first end of the substrate 1;
[0044] The second connection block 4 includes a third conductor 11 and a fourth conductor 12, wherein the first end of the third conductor 11 is connected to the second end of the second side of the support block 5, the second end of the third conductor 11 is connected to the first end of the fourth conductor 12, and the second end of the fourth conductor 12 extends toward the second end of the substrate 1.
[0045] Specifically, the connection between the first conductor 9 and the second conductor 10 is in a first curvature or vertical connection. In some preferred embodiments, for impedance matching, the connection between the first conductor 9 and the second conductor 10 is in a first curvature, and the size of the first curvature can be set according to actual needs. The connection between the first conductor 9 and the second conductor 10 is arranged below the middle of the first side of the support block 5. The connection between the third conductor 11 and the fourth conductor 12 is in a second curvature or vertical connection. In some preferred embodiments, for impedance matching, the connection between the third conductor 11 and the fourth conductor 12 is in a second curvature, and the size of the second curvature can be set according to actual needs. The connection between the third conductor 11 and the fourth conductor 12 is arranged below the middle of the second side of the support block 5.
[0046] According to some embodiments, Figure 2As shown, the second electrode 6 also includes a third side and a fourth side, the two ends of the third side are respectively connected to the first end of the first side and the first end of the second side, the two ends of the fourth side are respectively connected to the second end of the first side and the second end of the second side, and the first electrode 2 is arranged in the area enclosed by the first side, the second side, the third side and the fourth side.
[0047] The first side, the second side, the third side and the fourth side of the second electrode 6 are connected and closed in sequence, so that the second electrode 6 as a whole is maintained at the same potential. The first electrode 2 and the second electrode 6 form a GSG interface, and the change of the electrical signal is measured through the GSG adapter to be converted into a change in light intensity, thereby improving the sensitivity of the sensor measurement.
[0048] In some embodiments, Figure 1 As shown, a photoresist 13 is disposed on the outer side of the photosensitive film 7 to protect the photosensitive film 7, and also saves the process of removing the photoresist 13, thereby increasing the production speed. In other embodiments, the photoresist 13 may not be disposed.
[0049] The following is an explanation of the method for preparing the photosensitive sensor of the embodiment of the present application:
[0050] According to some embodiments, Figure 3 As shown, the present application provides a method for preparing a photosensor, the preparation method is applied to the photosensor as described above, and the preparation method comprises:
[0051] Step S1, providing a substrate 1, and etching a groove 8 on the substrate 1;
[0052] Step S2, filling the first sacrificial layer 14 in the groove 8, and performing CMP planarization treatment;
[0053] Step S3, preparing a planar electrode layer on the first sacrificial layer 14 and the substrate 1;
[0054] Step S4, forming a second sacrificial layer 15 on the first sacrificial layer 14 and the planar electrode layer in the middle of the substrate 1 by photolithography and thermal reflow processes;
[0055] Step S5, sequentially preparing a supporting electrode layer and a photosensitive film 7 on the second sacrificial layer 15;
[0056] Step S6, removing the first sacrificial layer 14 and the second sacrificial layer 15.
[0057] Specifically, in step S1, Figure 3 As shown in a, on the silicon substrate 1, after passing through the photolithography mask, a groove 8 with an opening length×width of 500um×500um, a depth of 50μm, and a sidewall etching angle of 90°~100° is formed by dry etching, and the photolithography mask is removed.
[0058] Further, in step S2, if Figure 3 As shown in b, PSG / / SiO2 / Si3N4 or other sacrificial layers are deposited by PVD or CVD and then CMP planarization is performed.
[0059] Furthermore, in step S3, the preparation method specifically further comprises:
[0060] Step S31, depositing a metal film such as Mo / Cu / Au / Cr / Pt with a thickness of 10 μm on the first sacrificial layer 14 and the substrate 1 by PVD or CVD;
[0061] Step S32, coating a photoresist 13 on the metal film, and patterning the photoresist 13 through a mask;
[0062] Step S33, performing pattern etching on the metal film through the photoresist 13;
[0063] Step S34, removing the photoresist 13, and forming a GSG test interface at the port.
[0064] Furthermore, in step S4, a second sacrificial layer 15 with a dome shape is formed by photolithography and thermal reflow. Preferably, the photoresist 13 is suitable for selecting a thick photoresist series with a thickness of 50-200 um. The specific dome width of the second sacrificial layer 15 can be set according to actual needs, and the height is determined by simulation results.
[0065] Furthermore, in step S5, the preparation method specifically further comprises:
[0066] Step S51, depositing a metal film such as Mo / Cu / Au / Cr / Pt with a thickness of 10 μm on the second sacrificial layer 15 by PVD deposition or CVD;
[0067] Step S52, depositing a 0.5 um thick adhesion layer of Ti or Al on the metal film;
[0068] Step S53, depositing 7 layers of 5um ITO / FTO / CdSe / ZnO / PbSe / SnSe or other photosensitive films on the adhesion layer;
[0069] Step S54, coating a photoresist 13 on the photosensitive film 7, and patterning the photoresist 13 through a mask;
[0070] Step S55, patterning the metal film and the photosensitive film 7 by means of the photoresist 13. The photoresist 13 may not be removed to protect the photosensitive film 7 externally, or may be removed, which is not limited in the present application. The photoresist 13 is preferably a thin film with a thickness of 1-5 um. The photoresist 13 does not affect the second sacrificial layer 15 in the round arch shape during the process. The photoresist 13 is selected to have a high light transmittance and good etching resistance, such as OIR 674.
[0071] Furthermore, in step S6, the first sacrificial layer 14 and the second sacrificial layer 15 are removed to obtain a final structure. The first sacrificial layer 14 and the second sacrificial layer 15 may be removed by a wet method.
[0072] The photosensitive sensor of the present application is small and strong, has a simple preparation method, low cost, and can be mass-produced.
[0073] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.
[0074] Although the present disclosure has been described with reference to several typical embodiments, it should be understood that the terms used are illustrative and exemplary, rather than restrictive. Since the present disclosure can be implemented in a variety of forms without departing from the spirit or essence of the present application, it should be understood that the above-mentioned embodiments are not limited to any of the foregoing details, but should be widely interpreted within the spirit and scope defined by the appended claims, so all changes and modifications falling within the scope of the claims or their equivalents should be covered by the appended claims.
Claims
1. A photosensor, characterized in that: The photosensitive sensor comprises: substrate; A first electrode, wherein the first electrode is disposed on the substrate, the first electrode comprises a first connecting block, a second connecting block and a supporting block, a first side and a second side of the supporting block are connected to the first connecting block and the second connecting block respectively, and the supporting block protrudes outward; a second electrode, the second electrode being disposed on the substrate, the second electrode comprising a first side edge and a second side edge, the first electrode being disposed between the first side edge and the second side edge; A photosensitive film is arranged on the outer side of the supporting block.
2. The photosensor according to claim 1, characterized in that: A groove is formed in the middle of the base, and the support block is arranged on the groove.
3. The photosensor according to claim 2, characterized in that: The first connection block includes a first conductor and a second conductor, wherein the first end of the first conductor is connected to the first end of the first side of the support block, the second end of the first conductor is connected to the first end of the second conductor, and the second end of the second conductor extends toward the first end of the substrate; The second connecting block includes a third conductor and a fourth conductor, wherein the first end of the third conductor is connected to the second end of the second side of the supporting block, the second end of the third conductor is connected to the first end of the fourth conductor, and the second end of the fourth conductor extends toward the second end of the substrate.
4. The photosensor according to claim 3, characterized in that: The supporting block is arched.
5. The photosensor according to claim 4, characterized in that: The second end of the first conductor and the first end of the second conductor are disposed below the middle of the first side of the support block, and the second end of the third conductor and the first end of the fourth conductor are disposed below the middle of the second side of the support block.
6. The photosensor according to claim 2, characterized in that: The second electrode also includes a third side and a fourth side, two ends of the third side are respectively connected to the first end of the first side and the first end of the second side, two ends of the fourth side are respectively connected to the second end of the first side and the second end of the second side, and the first electrode is arranged in an area enclosed by the first side, the second side, the third side and the fourth side.
7. The photosensor according to claim 2, characterized in that: The outer side of the photosensitive film is provided with photoresist.
8. A method for preparing a photosensor, characterized in that: The preparation method is applied to the photosensor according to any one of claims 2 to 7, and the preparation method comprises: providing a substrate, and etching a groove on the substrate; Filling the first sacrificial layer in the groove and performing CMP planarization process; preparing a planar electrode layer on the first sacrificial layer and the substrate; Forming a second sacrificial layer on the first sacrificial layer and the planar electrode layer in the middle of the substrate by a photolithography process and a thermal reflow process; sequentially preparing a supporting electrode layer and a photosensitive film on the second sacrificial layer; The first sacrificial layer and the second sacrificial layer are removed.
9. The preparation method according to claim 8, characterized in that: In preparing the planar electrode layer on the first sacrificial layer and the substrate, the preparation method further comprises: depositing a metal film on the first sacrificial layer and the substrate; Coating a photoresist on the metal film and patterning the photoresist through a mask; Patterning the metal film by photoresist; Remove the photoresist.
10. The preparation method according to claim 8, characterized in that: In sequentially preparing a supporting electrode layer and a photosensitive film on the second sacrificial layer, the preparation method comprises: depositing a metal film on the second sacrificial layer; depositing an adhesion layer on the metal film; depositing a photosensitive film on the adhesive layer; Coating a photoresist on the photosensitive film and patterning the photoresist through a mask; The metal film and the photosensitive film are patterned by photoresist.