High-voltage light-emitting diode and light-emitting device

Abstract

The invention provides a high-voltage light-emitting diode and a light-emitting device.The high-voltage light-emitting diode comprises a substrate and N light-emitting units formed above the substrate, N is larger than or equal to 2, the adjacent light-emitting units are spaced through isolation grooves, and the light-emitting units are sequentially and electrically connected through interconnection electrodes according to the preset arrangement direction; the interconnection electrode comprises a first interconnection section and a second interconnection section which are respectively positioned on the adjacent light-emitting units, and a connecting section for connecting the first interconnection section and the second interconnection section; the first interconnection section comprises a first sub-section and a second sub-section, the first sub-section is connected with the connection section, at least part of the first sub-section is parallel to the isolation groove, and at least part of the first sub-section is located in the isolation groove. According to the technical scheme, the structural parameters of the interconnection electrodes are changed, and part of the interconnection electrodes are arranged in the isolation grooves, so that the electrode shading area is reduced as much as possible on the premise of ensuring a good current expansion effect, and the luminance of a product is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a high-voltage light emitting diode and a light emitting device. Background Art

[0002] Light Emitting Diode (LED) is a semiconductor device whose basic structure includes a PN junction between a P-type semiconductor and an N-type semiconductor. When a forward voltage is applied to the LED, electrons and holes recombine at the junction of the PN junction to release energy, which is emitted in the form of photons to form light radiation.

[0003] At present, LED high-voltage chips generally adopt a series structure design, and common series combinations include 2-crystal strings, 3-crystal strings and 6-crystal strings. The above design connects multiple crystal cells in series to construct an LED chip that can withstand high voltage, and the crystal cells of the chip are effectively electrically isolated by channels. In the fields of lighting and backlighting, the application of LED high-voltage chips is becoming more and more extensive, and the demand for improving chip brightness is increasing. For larger high-voltage chips, in order to ensure the current expansion effect, it is usually adopted to add multiple fingers (current expansion bars) to achieve more uniform current expansion, thereby effectively improving the utilization rate of the light-emitting area and ultimately achieving the purpose of enhancing the light effect. However, too many finger structures will block part of the light-emitting area, resulting in reduced light output and a decrease in overall brightness.

[0004] Therefore, how to maximize the area and brightness of the light-emitting area while ensuring uniform current expansion has become a technical problem that needs to be urgently solved in the current field of LED high-voltage chip design. Summary of the invention

[0005] In view of the defects and shortcomings of the high-voltage LED chips mentioned above, the purpose of the present application is to provide a high-voltage light-emitting diode and a light-emitting device to effectively solve the problem of light-emitting area loss and improve the utilization rate of the light-emitting area.

[0006] According to one aspect of the present application, a high-voltage light-emitting diode is provided, comprising a substrate and N light-emitting units formed on the substrate, N≥2, adjacent light-emitting units are separated by isolation grooves, and the light-emitting units are electrically connected in sequence through interconnection electrodes according to a preset arrangement direction;

[0007] In a top-view perspective of the light-emitting diode, the interconnection electrode includes a first interconnection segment and a second interconnection segment respectively located at adjacent light-emitting units, and a connecting segment connecting the first interconnection segment and the second interconnection segment;

[0008] The first interconnected segment includes a first subsegment and a second subsegment, the first subsegment is connected to the connecting segment, at least part of the first subsegment is parallel to the length direction of the isolation groove, and at least part of the first subsegment is located in the isolation groove.

[0009] According to one aspect of the present application, a light emitting device is also provided, the light emitting device comprising:

[0010] Package substrate;

[0011] At least one high-voltage light-emitting diode is arranged on the surface of the packaging substrate, and the packaging substrate is electrically connected to the electrode structure of the high-voltage light-emitting diode; the high-voltage light-emitting diode is the high-voltage light-emitting diode described in any one of the above technical solutions.

[0012] Compared with the prior art, the high-voltage light-emitting diode and light-emitting device provided by the present application have at least the following beneficial effects:

[0013] The technical solution of the present application changes the structural parameters of the interconnecting electrodes, and a number of interconnecting electrodes are distributed on the semiconductor stack of the light-emitting unit to meet the current expansion requirements of larger-sized high-voltage chips; some interconnecting electrodes are arranged in isolation grooves to reduce the electrode shading area as much as possible while ensuring a good current expansion effect, so as to improve the luminous brightness of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a structural schematic diagram of a high voltage light emitting diode in the prior art;

[0015] Figure 2 A schematic diagram of the structure of a light emitting diode provided in Example 1 of the present application;

[0016] Figure 3 for Figure 2 A partial enlarged schematic diagram of

[0017] Figure 4 for Figure 2 Schematic diagram of the cross-section structure along AA;

[0018] Figure 5-6 A schematic diagram of the structure of a light emitting diode provided in Example 2 of the present application;

[0019] Figure 7 for Figure 5 A partial enlarged schematic diagram of

[0020] Figure 8 A schematic diagram of the structure of a light emitting diode provided in Example 3 of the present application;

[0021] Fig. 9 for Figure 8 A partial enlarged schematic diagram of

[0022] Fig.10 A schematic diagram of the structure of a light emitting diode provided in Embodiment 4 of the present application;

[0023] Fig.11 for Fig.10 A partial enlarged schematic diagram of .

[0024] List of reference numerals:

[0025] 100 Substrate

[0026] 110 Isolation slot

[0027] 200 Semiconductor stack

[0028] 210 first semiconductor layer

[0029] 220 Active layer

[0030] 230 Second semiconductor layer

[0031] 300 Current blocking layer

[0032] 310 first current blocking layer

[0033] 320 Second current blocking layer

[0034] 330 Third current blocking layer

[0035] 400 Transparent conductive layer

[0036] 510 First Electrode

[0037] 511 first electrode pad

[0038] 512 first electrode extension strip

[0039] 520 Second electrode

[0040] 521 second electrode pad

[0041] 522 second electrode extension strip

[0042] 600 Insulation protection layer

[0043] 700 Interconnected Electrodes

[0044] 710 First Interconnection Section

[0045] 711 First subsection

[0046] 7111 Part 1

[0047] 7112 Part 2

[0048] 712 Second subsection

[0049] 713 The third subsection

[0050] 720 Second Interconnection Section

[0051] 730 Connection segment DETAILED DESCRIPTION

[0052] The present application provides a high-voltage light-emitting diode, comprising a substrate and N light-emitting units formed on the substrate, N≥2, adjacent light-emitting units are separated by isolation grooves, and the light-emitting units are electrically connected in sequence through interconnection electrodes according to a preset arrangement direction;

[0053] From a top-down perspective along the light-emitting diode, the interconnecting electrode includes a first interconnecting segment and a second interconnecting segment respectively located at adjacent light-emitting units, and a connecting segment connecting the first interconnecting segment and the second interconnecting segment; the first interconnecting segment includes a first sub-segment and a second sub-segment, the first sub-segment is connected to the connecting segment, at least a portion of the first sub-segment is parallel to a length direction of the isolation groove in its length direction, and at least a portion of the first sub-segment is located in the isolation groove.

[0054] By adopting the above technical solution, the structural parameters of the interconnecting electrodes are changed, especially the formation position is changed to absorb light as much as possible, and a number of interconnecting electrodes are distributed on the semiconductor stack of the light-emitting unit to meet the current expansion requirements of larger-sized high-voltage chips; some interconnecting electrodes are arranged in isolation grooves to reduce the electrode shading area as much as possible while ensuring a good current expansion effect, thereby improving the luminous brightness of the product.

[0055] In an optional implementation manner, the light emitting unit includes:

[0056] A semiconductor stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence, the semiconductor stack further comprising a first mesa and a second mesa, the first mesa exposing a portion of the surface of the first semiconductor layer, and the second mesa exposing the surface of the second semiconductor layer;

[0057] A transparent conductive layer formed on the second mesa of each of the light-emitting units;

[0058] The first interconnection segment is located on the transparent conductive layer of the nth light-emitting unit and is electrically connected to the second semiconductor layer; the second interconnection segment is located on the first table of the adjacent n+1th light-emitting unit and is electrically connected to the first semiconductor layer, 1≤n<N. The first interconnection segment and the second interconnection segment of the interconnection electrode are respectively connected to the semiconductor layers of different polarities of two adjacent light-emitting units in sequence, so as to realize the structural series connection inside the high-voltage LED product.

[0059] In an optional implementation manner, the light emitting unit further includes:

[0060] A first electrode, located on the first table of the first light-emitting unit and electrically connected to the first semiconductor layer; the first electrode comprises a first electrode pad and at least one first electrode extension strip extending from the first electrode pad to the sequential arrangement direction of the light-emitting units;

[0061] The second electrode is located on the second table of the Nth light-emitting unit and is electrically connected to the second semiconductor layer; the second electrode includes a second electrode pad and at least two second electrode extension strips extending from both sides of the second electrode pad toward the nth light-emitting unit. In order to meet the current expansion requirements of a larger-sized high-voltage chip, each light-emitting unit is designed with multiple extension strips to make the current expansion more uniform, improve the utilization rate of the light-emitting area, and thus obtain a higher light efficiency.

[0062] In an optional embodiment, along the top view of the light-emitting diode, the second sub-segment is located at two side regions of the first electrode extension strip; or the second electrode extension strip is located at two side regions of the second interconnection segment. The first electrode extension strip and / or the second electrode extension strip of each light-emitting unit and the interconnection electrode of the corresponding light-emitting unit are evenly distributed on the semiconductor stack to achieve a good current spreading effect.

[0063] In an optional embodiment, the first subsegment has a width W1, the second subsegment has a width W2, and the second interconnected segment has a width W3, wherein W3≥W2 and / or W1≥W2. Part of the first subsegment is located in the isolation groove, and the relative width is increased to improve the current transmission effect without affecting the light emitting area.

[0064] In an optional embodiment, the first interconnection segment further includes a third sub-segment, the third sub-segment extending from the connection segment to the second table of the nth light-emitting unit; along the top view of the light-emitting diode, there is a minimum distance D1 between the third sub-segment and the first electrode extension strip, wherein D1 ≥ 10 μm. This distance can avoid current crowding caused by the two electrode structures being too close, so as to generate an ESD explosion point, thereby affecting the antistatic performance of the light-emitting diode.

[0065] In an optional embodiment, the first subsegment has a width W1, the second subsegment has a width W2, and the third subsegment has a width W4, wherein W2≤W4≤W1. The width of the third subsegment is moderate to take into account both the current spreading effect and the influence of the electrode on light absorption.

[0066] In an optional implementation manner, the light-emitting unit further includes a current blocking layer, and the current blocking layer is located on the semiconductor stack and the isolation trench;

[0067] From the top view of the light-emitting diode, the projection of the first interconnection segment is located within the projection range of the current blocking layer; the width of the current blocking layer under the first sub-segment of the first interconnection segment is not less than the width of the current blocking layer under the second sub-segment. Different current blocking layer widths are used to adapt to the difference in electrode width between the first sub-segment and the second sub-segment, providing a better surface for the deposition of the interconnection electrode in the isolation groove, and improving the deposition quality of the first sub-segment of the interconnection electrode.

[0068] In an optional embodiment, the length of the portion of the first interconnection segment located in the isolation groove accounts for 10% to 90% of the length of the isolation groove. The first interconnection segment of appropriate length is moved to the isolation groove to avoid shading by the electrode, which is beneficial to the position setting of the second sub-segment of the first interconnection segment and optimizes the overall current expansion effect and light extraction efficiency of the first light-emitting unit.

[0069] In an optional embodiment, the width of the first interconnection section located in the isolation trench is greater than or equal to the width of the isolation trench, and completely covers the bottom, sidewalls and opening of the isolation trench, thereby making the most of the width of the isolation trench to form a good quality electrode structure.

[0070] In an optional embodiment, along the top view of the light-emitting diode, the first sub-segment extends from the connecting segment to both sides thereof to form a first portion and a second portion, respectively, and the first portion and / or the second portion are located in the isolation groove. The first portion and the second portion may both be located in the isolation groove, or only one of them may be located in the isolation groove. The appropriate formation position and proportion of the first sub-segment may be selected based on structural parameters such as the width and depth of the isolation groove, and the product's requirements for light efficiency.

[0071] In an optional embodiment, the first part and the second part of the first sub-segment are symmetrically arranged with the connecting section as the axis. The first part and the second part are symmetrically arranged, and the second sub-segment connected to the ends of the first part and the second part can also be symmetrically arranged, so that the current spreads more evenly.

[0072] In an optional embodiment, the isolation groove has an inclined side wall, and the angle α between the side wall and the surface of the substrate is between 30° and 90°, which can increase the coverage area of ​​the interconnection electrode on the isolation groove side wall and improve the stability of the interconnection electrode.

[0073] In an optional implementation, the opening width W0 of the isolation groove is between 5 μm and 50 μm. Under the premise of not excessively reducing the light emitting area of ​​the light emitting unit, the interconnection electrode in the isolation groove is ensured to have sufficient deposition area and deposition width to improve the deposition quality of the interconnection electrode.

[0074] In an optional embodiment, the width of the connecting section is not less than the width of the first interconnecting section and / or the second interconnecting section, so as to improve current expansion, avoid current crowding, and improve the structural strength of the electrode connection position.

[0075] In an optional implementation manner, the size of the light emitting unit is not less than 120 μm*120 μm.

[0076] The present application provides a light-emitting device, the light-emitting device comprising:

[0077] Package substrate;

[0078] At least one high-voltage light-emitting diode is arranged on the surface of the packaging substrate, and the packaging substrate is electrically connected to the electrode structure of the high-voltage light-emitting diode; the high-voltage light-emitting diode is the high-voltage light-emitting diode described in any one of the above technical solutions.

[0079] The following specific embodiments illustrate the implementation of the present application, and those familiar with the technology can easily understand other advantages and effects of the present application from the content disclosed in this specification. The present application can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0080] It should be noted that the diagrams provided in the embodiments of the present application are only schematic illustrations of the basic concept of the present application. Although the diagrams only show the components related to the present application rather than the number, shape and size of the components in the actual implementation, the form, quantity and proportion of each component can be changed at will during the actual implementation, and the component layout form may also be more complex. The structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the restrictive conditions that can be implemented in the present application, so they have no technical substantive significance. Any modification of the structure, change in the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed in the present application without affecting the effects and purposes that can be achieved by the present application.

[0081] See also Figure 1The high-voltage LED chip structure shown, in order to ensure the current expansion effect, the first electrode 510 includes a first electrode pad 511 and a first electrode extension strip 512 extending on the first semiconductor layer of the upper light-emitting unit, the second electrode 520 includes a second electrode pad 521 and a second electrode extension strip 522 extending on the second semiconductor layer of the lower light-emitting unit, the interconnection electrode 700 includes a first interconnection segment 710 located in the upper light-emitting unit and a second interconnection segment 720 located in the lower light-emitting unit, and the multiple interconnection segments of the interconnection electrode 700 are all long strips and distributed in the light-emitting area of ​​the adjacent light-emitting unit. Multiple current expansion strips are used to achieve more uniform current expansion, thereby effectively improving the utilization rate of the light-emitting area and ultimately achieving the purpose of enhancing the light effect. However, too many current expansion strips will block part of the light-emitting area, thereby causing a reduction in light output and a reduction in overall brightness. Based on the background technology and the above-mentioned technical defects, the present application provides a high-voltage light-emitting diode and a light-emitting device to effectively solve or improve the above-mentioned technical problems. The following is a detailed description of the technical solution of the present application through specific embodiments.

[0082] For ease of description, it is defined that the Z direction indicates the thickness direction of the high-voltage LED chip; the X direction indicates the length direction of the isolation groove; and the Y direction indicates the arrangement direction of adjacent light-emitting units.

[0083] Embodiment 1:

[0084] like Figure 2 to Figure 4 As shown, this embodiment provides a high-voltage light-emitting diode, including a substrate 100 and N light-emitting units formed on the substrate 100, N ≥ 2, adjacent light-emitting units are separated by isolation grooves 110, and the light-emitting units are electrically connected in sequence through interconnection electrodes 700 according to a preset arrangement direction, that is, the Y direction in the figure. This embodiment is described by taking a high-voltage LED chip with N = 2 as an example, Figure 2 The two adjacent light-emitting units shown are respectively the first light-emitting unit and the second light-emitting unit. Along the top-view angle of the light-emitting diode, the interconnection electrode 700 includes a first interconnection segment 710 connected to the second semiconductor layer 230 of the first light-emitting unit, a second interconnection segment 720 connected to the first semiconductor layer 210 of the second light-emitting unit, and a connecting segment 730 connecting the first interconnection segment 710 and the second interconnection segment 720; wherein, the first interconnection segment 710 includes a first sub-segment 711 and a second sub-segment 712, the first sub-segment 711 is connected to the connecting segment 730, the first sub-segment 711 is parallel to the length direction of the isolation groove 110 in its length direction and is located in the isolation groove 110, the second sub-segment 712 continues to extend from the end of the first sub-segment 711 and is distributed within the light-emitting area of ​​the first light-emitting unit, and part of the interconnection electrode 700 is set in the isolation groove 110, which can not only ensure a good current expansion effect, but also reduce the electrode shading area, thereby improving the luminous brightness of the product.

[0085] It can be understood that for a high-voltage LED chip with the number of light-emitting units N>2, the interconnection electrode setting method in the isolation groove 110 between adjacent light-emitting units is similar. The first interconnection segment 710 of the nth light-emitting unit can be better set in the isolation groove 110 between the nth light-emitting unit and the n+1th light-emitting unit by changing its position and structural parameters, so as to reduce the electrode light absorption.

[0086] Continue to see Figures 2 to 4 The high-voltage light-emitting diode provided in this embodiment includes a substrate 100, a semiconductor stack 200, a current blocking layer 300, a transparent conductive layer 400, an electrode structure, and an insulating protection layer 600, etc. in sequence.

[0087] In an optional implementation, other material layers that contribute to the device function, such as a bonding layer, may be included between the substrate 100 and the semiconductor stack 200, but this embodiment is not limited thereto. The substrate 100 may be an insulating substrate, a semiconductor substrate, or a metal substrate, etc. The substrate of the high-voltage light-emitting diode provided in this embodiment is a sapphire substrate.

[0088] In an optional embodiment, the semiconductor stack 200 is formed on the substrate 100, and includes a first semiconductor layer 210, an active layer 220, and a second semiconductor layer 230 stacked in sequence. The semiconductor stack 200 has a first mesa and a second mesa, the first mesa exposes a portion of the first semiconductor layer 210, and the second mesa is the upper surface of the second semiconductor layer 230. The interconnection electrode 700 extends from the second mesa of the first light-emitting unit, and extends to the first mesa of the second light-emitting unit through the side wall and the bottom surface of the isolation groove 110, so as to realize the structural series connection of the high-voltage LED.

[0089] The first semiconductor layer 210 is an N-type semiconductor layer, and the second semiconductor layer 230 is a P-type semiconductor layer. The N-type first semiconductor layer 210 provides electrons to the active layer 220 by doping with N-type impurities, and the P-type second semiconductor layer 230 provides holes to the active layer 220 by doping with P-type impurities. The semiconductor stack 200 can be a III-V compound semiconductor material layer. For example, the first semiconductor layer 210 and the second semiconductor layer 230 can be aluminum indium phosphide (AlInP) or aluminum gallium indium phosphide (AlGaInP) system material layers, or III-group nitride material layers; the active layer 220 can use semiconductor materials of gallium arsenide (GaAs) series, aluminum gallium indium nitride (AlGaInN) series, aluminum indium phosphide (AlInP) or aluminum indium gallium phosphide (AlGaInP) series, but this embodiment is not limited thereto. N-type impurities can be Si, Ge, Sn, Se, Te, etc., and P-type impurities can be Mg, Zn, Ca, Sr, C, Ba, etc. Furthermore, the N-type impurity may be Si, and the P-type impurity may be C.

[0090] Continue to see Figures 2 to 4 In an optional embodiment, each light-emitting unit further includes a current blocking layer 300, which is used to reduce the current accumulation under the electrode structure, reduce the absorption of light by the electrode, improve the light output rate, and further balance the current distribution to provide a more uniform current density. The current blocking layer 300 is made of any one of SiO2, Ti3O5, SiN, Al2O3 or other acceptable materials. In this embodiment, the current blocking layer 300 is a single layer of silicon dioxide material. Furthermore, the current blocking layer 300 specifically includes a first current blocking layer 310, a second current blocking layer 320 and a third current blocking layer 330, and the second blocking layer is a continuous overall strip structure or includes a plurality of spaced blocking structures. Among them, the first current blocking layer 310 is located below the first electrode 510 of the first light-emitting unit, and along the top-down viewing angle of the light-emitting diode, the projection of the first current blocking layer 310 is located within the projection range of the first electrode 510, and is used to block the vertical current transmission between the first electrode 510 and the first semiconductor layer 210; the second current blocking layer 320 is located below the second electrode 520 of the second light-emitting unit, and the projection of the second current blocking layer 320 is located within the projection range of the second electrode 520, and is used to block the vertical current transmission between the second electrode 520 and the second semiconductor layer 230; the third current blocking layer 330 is located on the semiconductor stack 200 and the isolation groove 110 of the first light-emitting unit, specifically located below the first interconnecting segment 710 and part of the connecting segment 730, the projection of the first interconnecting segment 710 is located within the projection range of the current blocking layer 300, and the current blocking layer width below the first sub-segment 711 of the first interconnecting segment 710 is not less than the current blocking layer width below the second sub-segment 712. In an optional embodiment, the width W5 of the current blocking layer below the first sub-segment 711 is between 20 μm and 100 μm, and the width W6 of the current blocking layer below the second sub-segment 712 is between 10 μm and 100 μm. Preferably, the width of the current blocking layer below the second sub-segment 712 is not greater than the width of the current blocking layer below the first sub-segment 711. Further, the distance between the projected edge of the first sub-segment 711 and the edge of the current blocking layer below it is greater than the distance between the projected edge of the second sub-segment 712 and the edge of the current blocking layer below it. For the first interconnection segment 710, due to its different setting positions, the electrode width is also different accordingly. The width of the first sub-segment 711 located in the isolation groove 110 is greater than the width of the second sub-segment 712 located above the first light-emitting unit. The different current blocking layer widths are adapted to the difference in electrode width between the first sub-segment 711 and the second sub-segment 712, providing a better surface for the deposition of the first interconnection segment 710 in the isolation groove 110, thereby improving the overall quality of the interconnection electrode 700.

[0091] In an optional embodiment, a transparent conductive layer 400 is formed on the second table of each light-emitting unit to improve the lateral transmission capability of the current. The transparent conductive layer 400 can be made of any one of an indium oxide layer, an indium tin oxide layer, an aluminum-doped indium oxide, an indium tin oxide layer, or other acceptable materials. The first interconnection segment 710 of the interconnection electrode 700 is located on the transparent conductive layer 400 of the first light-emitting unit and is electrically connected to the second semiconductor layer 230; the second interconnection segment 720 is located on the first table of the adjacent second light-emitting unit and is electrically connected to the first semiconductor layer 210, so as to realize the internal structure series connection of the high-voltage LED product.

[0092] In an optional embodiment, the first electrode 510 is formed on the first table of the first light-emitting unit and is electrically connected to the first semiconductor layer 210. The first electrode 510 includes a first electrode pad 511 and at least one first electrode extension strip 512 extending from the first electrode pad 511 to the direction of the second light-emitting unit to meet the current expansion requirements of a larger-sized high-voltage chip. The second electrode is formed on the second table of the second light-emitting unit and is electrically connected to the second semiconductor layer 230. The second electrode 520 includes a second electrode pad 521 and at least two second electrode extension strips 522 extending from both sides of the second electrode pad 521 to the direction of the first light-emitting unit. The shape of the second electrode pad 521 is preferably circular to provide a more uniform current distribution. Multiple extension strips are designed for each light-emitting unit to make the current expansion more uniform, improve the utilization rate of the light-emitting area, and thus obtain a higher light efficiency.

[0093] In the above embodiment, along the top view of the light-emitting diode, the second sub-segment 712 of the first interconnection segment 710 is respectively located on the two side areas of the first electrode extension strip 512, and the electrodes are relatively evenly distributed in the light-emitting area of ​​the first light-emitting unit to achieve a good current expansion effect. Further, the two second sub-segments 712 are symmetrically arranged with the first electrode extension strip 512 as the axis, and the second sub-segments 712 and the first electrode extension strip 512 are distributed parallel to each other.

[0094] In the above embodiment, the second electrode extension strips 522 are respectively located on the two side regions of the second interconnection segment 720, and the electrodes in the light-emitting region of the second light-emitting unit are also relatively evenly distributed, ensuring that each light-emitting unit has a good current spreading effect. Further, the two second electrode extension strips 522 are symmetrically arranged with the second interconnection segment 720 as an axis, and the second electrode extension strips 522 and the second interconnection segment 720 are distributed parallel to each other.

[0095] See also Figure 4, the isolation groove 110 includes two side walls, one of which is connected to the second mesa in the first light-emitting unit, and a part of the other side wall is connected to the first mesa in the second light-emitting unit. The two side walls of the isolation groove 110 are symmetrical with respect to the central axis of the isolation groove 110. In an optional embodiment, the side wall of the isolation groove 110 may be a planar structure or an arc structure to provide a higher quality deposition surface and improve the structural strength of the subsequent multiple semiconductor layers. The isolation groove 110 provided in this embodiment has an inclined side wall, and the angle α between the side wall and the surface of the substrate 100 is between 30° and 90°, so as to increase the coverage area of ​​the interconnection electrode 700 on the side wall of the isolation groove and improve the stability of the interconnection electrode. As an example, the angle α between the side wall and the surface of the substrate 100 can be 65°, 70°, 75°, 80° or 85°. Further, the angle α between the side wall and the surface of the substrate 100 is between 40° and 60°, so as to obtain an electrode structure with uniform thickness and good quality, while ensuring the effective light-emitting area and light-emitting efficiency of the light-emitting diode.

[0096] See also Figures 2 to 4 In an optional embodiment, along the top view of the light-emitting diode, the isolation groove 110 is linear and extends along the X direction, or the isolation groove 110 is arc-shaped and bends toward one of the light-emitting units. Correspondingly, the parameters such as the setting position and direction of the first sub-segment 711 of the interconnect electrode 700 are also adjusted accordingly to adapt to the structure of the isolation groove 110. The isolation groove 110 provided in this embodiment is a linear groove, and the opening width of the isolation groove 110 is consistent along the X direction, and the opening width W0 of the isolation groove 110 is between 5μm and 50μm. As an example, the opening width W0 can be 10μm, 20μm, 30μm or 40μm. If the width of the isolation groove 110 is too large, it will occupy the area of ​​the light-emitting area and affect the brightness of the light, while if the opening width is too small, it will not play a good electrical isolation role between the light-emitting units. Furthermore, the opening width W0 of the isolation groove 110 is between 10 μm and 30 μm, which ensures that the interconnection electrode in the isolation groove 110 has sufficient deposition area and deposition width without excessively reducing the light output area of ​​the light-emitting unit, thereby improving the deposition quality of the interconnection electrode.

[0097] Continue to see Figures 2 to 4, the first sub-segment 711 is located in the isolation groove 110. Under the premise of not affecting the light-emitting area, the relative width is increased to improve the current transmission effect. The first sub-segment 711 located in the isolation groove 110 has a width W1, and the width of the first sub-segment 711 remains the same; the second sub-segment 712 distributed on the second mesa of the first light-emitting unit has a width W2, and the width of the second sub-segment 712 remains the same, W1≥W2. Specifically, the width W1 of the first sub-segment 711 is between 5μm and 30μm, the width W2 of the second sub-segment 712 is between 2μm and 40μm, and the width W2 of the second sub-segment 712 is preferably not more than 10μm. The width of the first sub-segment 711 is adaptively adjusted according to the width of the isolation groove 110. In an optional embodiment, the width of the first sub-segment 711 located in the isolation groove 110 is greater than or equal to the width of the isolation groove 110, and completely covers the bottom, sidewalls and opening of the isolation groove 110, and maximizes the width of the isolation groove 110 to form a good quality electrode structure. It can be understood that on the basis of ensuring the electrode current transmission performance and structural strength, the width of the first sub-segment 711 located in the isolation groove 110 can also be less than the width of the isolation groove 110.

[0098] Continue to see Figures 2 to 4 , the second interconnection segment 720 has a width W3, W3 ≥ W2. The width of the second interconnection segment 720 is greater than the width of the second sub-segment 712, and the second interconnection segment 720 extends longitudinally along the first table in the middle of the second light-emitting unit, with an appropriate width to improve the current expansion effect in the middle area of ​​the second light-emitting unit. The width W3 of the second interconnection segment 720 is between 2μm and 50μm, and the width W3 of the second interconnection segment 720 is preferably not more than 10μm. Further, W1 ≥ W3 ≥ W2.

[0099] Continue to see Figures 2 to 4In an optional embodiment, along the top view of the light-emitting diode, the first sub-segment 711 extends from the connecting segment 730 to both sides thereof, forming a first portion 7111 and a second portion 7112, respectively, and the first portion 7111 and the second portion 7112 are both located in the isolation groove 110. Further, the first portion 7111 and the second portion 7112 of the first sub-segment 711 are symmetrically arranged with the connecting segment 730 as the axis. The length of the portion of the first interconnected segment 710 located in the isolation groove 110 accounts for 10% to 90% of the length of the isolation groove 110. When the first interconnected segment 710 of a suitable length is moved to the isolation groove, it is beneficial to the position setting of the second sub-segment 712 of the first interconnected segment 710 to optimize the overall current expansion effect and light extraction efficiency of the first light-emitting unit. Further, the length of the portion of the first interconnected segment 710 located in the isolation groove 110 accounts for 10% to 70% of the length of the isolation groove 110. In an optional embodiment, the length of the first portion 7111 and the second portion 7112 located in the isolation groove 110 each accounts for 5% to 45% of the length of the isolation groove 110. The first portion 7111 and the second portion 7112 are symmetrically arranged, and the second sub-segment 712 connected to the ends of the first portion 7111 and the second portion 7112 can also be symmetrically arranged, so that the current on the surface of the light-emitting unit spreads more evenly. Furthermore, the length of the first portion 7111 and the second portion 7112 located in the isolation groove 110 each accounts for 5% to 35% of the length of the isolation groove 110.

[0100] In an optional embodiment, the width of the connecting segment 730 is not less than the width of the first interconnecting segment 710, and the width of the connecting segment 730 is not less than the width of the second interconnecting segment 720, so as to improve the current expansion effect, avoid current crowding, and improve the structural strength of the electrode connection position.

[0101] See also Figure 3 In an optional embodiment, each light-emitting unit further includes an insulating protective layer 600, which covers the surface, sidewalls, and isolation grooves 110 between adjacent light-emitting units of each light-emitting unit. The insulating protective layer 600 includes but is not limited to a distributed Bragg reflector or a single-layer insulating layer, and its material can be one or more of different materials such as SiO2, TiO2, ZnO2, ZrO2, Cu2O3, etc. The insulating protective layer 600 is respectively provided with through holes located above the first electrode 510 and the second electrode 520, so that the pad structure is formed on the insulating protective layer 600 and is electrically connected to the first semiconductor layer 210 and the second semiconductor layer 230 respectively.

[0102] The following table shows the performance test data of the products in this embodiment:

[0103] FT-LOP FT-VF1 FT-WLD1 K-VF △LOP Design for mass production 218.118 6.062 450.446 BASE BASE Embodiment 1 218.132 6.062 450.460 0.000 0.76％

[0104] It can be seen from the table that by adopting the technical solution of Example 1, the product voltage remains basically stable, the brightness of the product provided by Example 1 is increased by 0.76%, the current expansion effect is optimized, and the electrical performance of the product is improved to a certain extent.

[0105] Embodiment 2:

[0106] like Figure 5 to Figure 7 As shown, this embodiment also provides a high-voltage light-emitting diode, including a substrate 100 and N light-emitting units formed on the substrate 100, N ≥ 2, adjacent light-emitting units are separated by isolation grooves 110, and the light-emitting units are electrically connected in sequence through interconnection electrodes 700 according to a preset arrangement direction, that is, the Y direction. This embodiment is described by taking a high-voltage LED chip with N = 2 as an example, Figure 5 and Figure 6 The two adjacent light-emitting units shown respectively are the first light-emitting unit and the second light-emitting unit. Along the top-view angle of the light-emitting diode, the interconnection electrode 700 includes a first interconnection segment 710 connected to the second semiconductor layer of the first light-emitting unit, a second interconnection segment 720 connected to the first semiconductor layer of the second light-emitting unit, and a connecting segment 730 connecting the first interconnection segment 710 and the second interconnection segment 720; wherein, the first interconnection segment 710 includes a first sub-segment 711 and a second sub-segment 712, the first sub-segment 711 is connected to the connecting segment 730, the first sub-segment 711 is parallel to the length direction of the isolation groove 110 in its length direction, the first sub-segment 711 extends from the connecting segment 730 to both sides thereof, forming a first part 7111 and a second part 7112, respectively, and the two second sub-segments 712 continue to extend from the ends of the first part 7111 and the second part 7112 and are distributed within the light-emitting area of ​​the first light-emitting unit.

[0107] Other similarities between the technical solution of this embodiment and the first embodiment are not repeated here, and the differences between the technical solution of this embodiment and the first embodiment are described in detail below.

[0108] Figure 5 Schematic diagram of a high-voltage LED structure in which the second portion 7112 is located in the isolation groove 110 and the first portion 7111 is located above the first light-emitting unit; Figure 6The figure is a schematic diagram of a high-voltage LED structure in which the first part 7111 is located in the isolation groove 110 and the second part 7112 is located above the first light-emitting unit. A part of the first sub-segment 711 is formed above the isolation groove 110, and the other part is formed above the light-emitting unit, which can not only ensure a good current expansion effect on each light-emitting unit, but also reduce the electrode shading area and improve the luminous brightness of the product. Furthermore, the first part 7111 and the second part 7112 of the first sub-segment 711 are located on both sides of the connecting section 730 and have the same length, so that the second sub-segment 712 connected to the ends of the first part 7111 and the second part 7112 are also symmetrically arranged, and the current spreads more evenly.

[0109] Embodiment three:

[0110] like Figure 8-Figure 9 As shown, this embodiment also provides a high-voltage light-emitting diode, including a substrate 100 and N light-emitting units formed on the substrate 100, N ≥ 2, adjacent light-emitting units are separated by isolation grooves 110, and the light-emitting units are electrically connected in sequence through interconnection electrodes 700 according to a preset arrangement direction, that is, the Y direction. This embodiment is described by taking a high-voltage LED chip with N = 2 as an example, Figure 8 The two adjacent light-emitting units shown are respectively the first light-emitting unit and the second light-emitting unit. Along the top-view angle of the light-emitting diode, the interconnection electrode 700 includes a first interconnection segment 710 connected to the second semiconductor layer of the first light-emitting unit, a second interconnection segment 720 connected to the first semiconductor layer of the second light-emitting unit, and a connecting segment 730 connecting the first interconnection segment 710 and the second interconnection segment 720; wherein, the first interconnection segment 710 includes a first sub-segment 711 and a second sub-segment 712, the first sub-segment 711 is connected to the connecting segment 730, the first sub-segment 711 is parallel to the length direction of the isolation groove 110 in its length direction, the first sub-segment 711 extends from the connecting segment 730 to both sides thereof, forming a first part 7111 and a second part 7112, respectively, and the two second sub-segments 712 continue to extend from the ends of the first part 7111 and the second part 7112 and are distributed within the light-emitting area of ​​the first light-emitting unit.

[0111] Other similarities between the technical solution of this embodiment and the first embodiment are not repeated here, and the differences between the technical solution of this embodiment and the first embodiment are described in detail below.

[0112] The first interconnection segment 710 also includes a third sub-segment 713, which extends from the connection segment 730 to the second table of the first light-emitting unit; along the top view of the light-emitting diode, there is a minimum distance D1 between the third sub-segment 713 and the first electrode extension strip 512, where D1 ≥ 10μm. As an example, D1 can be 12μm, 15μm, 20μm, 25μm or 35μm. This distance can avoid current crowding caused by the close distance between the two electrode structures, so as to produce ESD explosion points and affect the antistatic performance of the light-emitting diode. If the spacing is too large, it will not have a sufficient current expansion effect, affecting the current density of the first light-emitting unit. Furthermore, D1 is between 15μm and 30μm.

[0113] In an optional embodiment, the first subsegment 711 has a width W1, the second subsegment 712 has a width W2, and the third subsegment 713 has a width W4, wherein W2≤W4≤W1. The width of the third subsegment 713 is between 2μm and 30μm, and the width of the third subsegment 713 is preferably not greater than 10μm. The width of the third subsegment 713 is moderate to take into account the current spreading effect and the influence of the electrode on light absorption. The width of the third subsegment 713 can be consistent with the width of the second interconnected segment 720, and the third subsegment 713 and the second interconnected segment 720 are both located on the same straight line. Furthermore, the length of the third subsegment 713 is between 10μm and 80μm.

[0114] Embodiment 4:

[0115] like Figure 10-11 As shown, this embodiment also provides a high-voltage light-emitting diode, including a substrate 100 and N light-emitting units formed on the substrate 100, N ≥ 2, adjacent light-emitting units are separated by isolation grooves 110, and the light-emitting units are electrically connected in sequence through interconnection electrodes 700 according to a preset arrangement direction, that is, the Y direction. This embodiment is described by taking a high-voltage LED chip with N = 2 as an example, Fig.10 The two adjacent light-emitting units shown are respectively the first light-emitting unit and the second light-emitting unit. Along the top-down perspective of the light-emitting diode, the interconnection electrode 700 includes a first interconnection segment 710 connected to the second semiconductor layer of the first light-emitting unit, a second interconnection segment 720 connected to the first semiconductor layer of the second light-emitting unit, and a connecting segment 730 connecting the first interconnection segment 710 and the second interconnection segment 720; wherein the first interconnection segment 710 includes a first sub-segment 711 extending from the connecting segment 730 to both sides, namely a first part 7111 and a second part 7112, and continues to extend along the Y direction at the ends of the first part 7111 and the second part 7112 to form a second sub-segment 712.

[0116] Other similarities between the technical solution of this embodiment and the first embodiment are not repeated here, and the differences between the technical solution of this embodiment and the first embodiment are described in detail below.

[0117] The first part 7111 and the second part 7112 of the first sub-segment 711 are both "L"-shaped structures, and the first part 7111 and the second part 7112 have a portion parallel to the length direction of the isolation groove 110 and a portion perpendicular to the direction of the isolation groove 110 in the length direction. In an optional embodiment, the electrode widths of the first part 7111 and the second part 7112 formed by the first sub-segment 711 extending from the connecting section 730 to both sides thereof are gradually reduced in a step-like manner until they are the same as the width W2 of the second sub-segment 712. Furthermore, the width of the third current blocking layer 330 located below the first interconnecting section 710 and the connecting section 730 also decreases along this direction.

[0118] Embodiment five:

[0119] This embodiment provides a light-emitting device, which is a high-voltage flip-chip LED product. The light-emitting device can be a lighting device, a backlight device, a display device, such as a lamp, a television, a mobile phone, a panel, or an RGB display screen. The light-emitting device includes the high-voltage light-emitting diode in the above embodiment, which is mounted on an application substrate or a packaging substrate to form a light source part, so the light-emitting device also has the above excellent effects.

[0120] In summary, the high-voltage light-emitting diode and light-emitting device provided by the present application effectively overcome various shortcomings in the prior art and have high industrial utilization value.

[0121] The above embodiments are merely illustrative of the principles and effects of the present application and are not intended to limit the present application. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed in the present application shall still be covered by the claims of the present application.

Claims

1. A high voltage light emitting diode, characterized in that: It comprises a substrate and N light-emitting units formed on the substrate, N≥2, adjacent light-emitting units are separated by isolation grooves, and the light-emitting units are electrically connected in sequence through interconnection electrodes according to a preset arrangement direction; In a top-view perspective of the light-emitting diode, the interconnection electrode includes a first interconnection segment and a second interconnection segment respectively located at adjacent light-emitting units, and a connecting segment connecting the first interconnection segment and the second interconnection segment; The first interconnected segment includes a first subsegment and a second subsegment, the first subsegment is connected to the connecting segment, at least part of the first subsegment is parallel to the length direction of the isolation groove, and at least part of the first subsegment is located in the isolation groove.

2. The high voltage light emitting diode according to claim 1, characterized in that: The light emitting unit comprises: A semiconductor stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence, the semiconductor stack further comprising a first mesa and a second mesa, the first mesa exposing a portion of the surface of the first semiconductor layer, and the second mesa exposing the surface of the second semiconductor layer; A transparent conductive layer formed on the second mesa of each of the light-emitting units; The first interconnection segment is located on the transparent conductive layer of the nth light-emitting unit and is electrically connected to the second semiconductor layer; the second interconnection segment is located on the first table surface of the adjacent n+1th light-emitting unit and is electrically connected to the first semiconductor layer, 1≤n<N.

3. The high voltage light emitting diode according to claim 2, characterized in that: The light emitting unit further comprises: A first electrode, located on the first table of the first light-emitting unit and electrically connected to the first semiconductor layer; the first electrode comprises a first electrode pad and at least one first electrode extension strip extending from the first electrode pad to the sequential arrangement direction of the light-emitting units; The second electrode is located on the second table of the Nth light-emitting unit and is electrically connected to the second semiconductor layer; the second electrode includes a second electrode pad and at least two second electrode extension strips extending from both sides of the second electrode pad toward the nth light-emitting unit.

4. The high voltage light emitting diode according to claim 3, characterized in that: From a top-view perspective of the light-emitting diode, the second sub-segments are respectively located at two side regions of the first electrode extension strip; or, the second electrode extension strips are respectively located at two side regions of the second interconnection segment.

5. The high voltage light emitting diode according to claim 3, characterized in that: The first sub-segment has a width W1, the second sub-segment has a width W2, and the second interconnected segment has a width W3, wherein W3 ≥ W2 and / or W1≥W2.

6. The high voltage light emitting diode according to claim 3, characterized in that: The first interconnection segment further includes a third subsegment, the third subsegment extending from the connection segment to the second table of the nth light-emitting unit; along the top view of the light-emitting diode, the third subsegment has a minimum distance from the first electrode extension strip. D1, where D1 ≥ 10 μm.

7. The high voltage light emitting diode according to claim 6, characterized in that: The first sub-segment has a width W1 , the second sub-segment has a width W2 , and the third sub-segment has a width W4 , wherein W2 ≤ W4 ≤ W1 .

8. The high voltage light emitting diode according to claim 2, characterized in that: The light emitting unit further comprises a current blocking layer, and the current blocking layer is located on the semiconductor stack and the isolation trench; From a top-down perspective along the light-emitting diode, the projection of the first interconnecting segment is located within the projection range of the current blocking layer; and the width of the current blocking layer below the first subsegment of the first interconnecting segment is not less than the width of the current blocking layer below the second subsegment.

9. The high voltage light emitting diode according to claim 1, characterized in that: The length of the portion of the first interconnection segment located in the isolation trench accounts for 10% to 90% of the length of the isolation trench.

10. The high voltage light emitting diode according to claim 1, characterized in that: The width of the portion of the first interconnection section located in the isolation trench is greater than or equal to the width of the isolation trench, and completely covers the bottom, sidewall and isolation trench opening of the isolation trench.

11. The high voltage light emitting diode according to claim 1, characterized in that: In a top-view perspective of the light-emitting diode, the first sub-segment extends from the connecting segment to both sides thereof to form a first portion and a second portion respectively, and the first portion and / or the second portion are located in the isolation groove.

12. The high voltage light emitting diode according to claim 1, characterized in that: The first part and the second part of the first subsection are symmetrically arranged with the connecting section as an axis.

13. The high voltage light emitting diode according to claim 1, characterized in that: The isolation trench has an inclined sidewall, and an included angle α between the sidewall and the surface of the substrate is between 30° and 90°.

14. The high voltage light emitting diode according to claim 1, characterized in that: The opening width W0 of the isolation trench is between 5 μm and 50 μm.

15. The high voltage light emitting diode according to claim 1, characterized in that: The width of the connecting section is not less than the width of the first interconnecting section and / or the second interconnecting section.

16. The high voltage light emitting diode according to claim 1, characterized in that: The size of the light emitting unit is not less than 120 μm*120 μm.

17. A light emitting device, characterized in that: The light emitting device comprises: Package substrate; At least one high-voltage light-emitting diode is arranged on the surface of the packaging substrate, and the packaging substrate is electrically connected to the electrode structure of the high-voltage light-emitting diode; the high-voltage light-emitting diode is the high-voltage light-emitting diode according to any one of claims 1 to 16.

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