Substrate processing apparatus, gas supply unit, method for manufacturing semiconductor device, and program

Abstract

Provided is a technique capable of reducing the risk of oxygen (O2) permeation. Provided is a technique comprising: a first gas supply unit for supplying a first gas; a first member through which the first gas from the first gas supply unit flows; a second member through which the first gas from the first member flows; a third member through which the first gas from the second member flows; a processing chamber to which the first gas from the third member is supplied; a first sealing member located between the first member and the second member; the second sealing part is positioned between the second part and the third part; a second gas supply unit that supplies a second gas; a first gas path which is disposed along the second sealing member and through which the second gas flows; and a second gas path which is disposed along the first sealing member and through which the second gas flows.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, a gas supply unit, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] As one form of a substrate processing apparatus used in a process of manufacturing a semiconductor device, for example, a substrate processing apparatus that processes a plurality of substrates at a time is used (for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2011-129879 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In a semiconductor manufacturing device that processes a substrate such as a semiconductor wafer in a decompressed vacuum container (reaction tube), oxygen (O 2 ) The risk of penetration at the connection portion of the opening of the vacuum container increases.

[0008] The present invention provides a method for reducing oxygen (O 2 ) through the risk of technology.

[0009] Solutions to Solve Problems

[0010] According to one embodiment of the present disclosure, a technology is provided, which has:

[0011] a first gas supply unit that supplies a first gas;

[0012] a first member that allows the first gas from the first gas supply portion to flow;

[0013] a second component that communicates the first gas from the first component;

[0014] a third component that communicates the first gas from the second component;

[0015] a process chamber supplied with the first gas from the third member;

[0016] a first sealing member located between the first member and the second member;

[0017] a second sealing member located between the second member and the third member;

[0018] a second gas supply unit that supplies a second gas;

[0019] a first gas path disposed along the second sealing member and allowing the second gas to flow; and

[0020] The second gas path is arranged along the first sealing member and allows the second gas to flow.

[0021] Effects of the Invention

[0022] According to the present disclosure, it is possible to reduce oxygen (O 2 ) risk of penetration. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure.

[0024] Figure 2 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure.

[0025] Figure 3 (a) is an explanatory diagram of a gas supply system (gas supply pipe 251) according to one embodiment of the present disclosure. Figure 3 (b) is an explanatory diagram for explaining a gas supply system (gas supply pipe 261) according to one embodiment of the present disclosure.

[0026] Figure 4 This is an explanatory diagram for explaining a controller of a substrate processing apparatus according to one embodiment of the present disclosure.

[0027] Figure 5 This is a flowchart illustrating a substrate processing flow according to one embodiment of the present disclosure.

[0028] Figure 6 It is a cross-sectional view illustrating a gas supply structure according to one embodiment of the present disclosure.

[0029] Figure 7 It is a perspective view of the front and back surfaces of the first component and the second component of one embodiment of the present disclosure.

[0030] Figure 8 This is a partial perspective view of the back surface of the first component and the second component of one embodiment of the present disclosure.

[0031] Fig. 9 It is an explanatory diagram for explaining a first purge gas path and a second purge gas path according to one embodiment of the present disclosure.

[0032] Fig.10 It is an explanatory diagram for explaining a purge gas supply system according to one embodiment of the present disclosure.

[0033] Fig.11 is oxygen (O 2) is an illustration of the amount of permeation. DETAILED DESCRIPTION

[0034] Hereinafter, the implementation of the present mode will be described with reference to the accompanying drawings. In addition, the drawings used in the following description are all schematic, and the relationship between the dimensions of the elements and the ratio of the elements in the drawings may not be consistent with the actual situation. In addition, the relationship between the dimensions of the elements and the ratio of the elements may not be consistent between multiple drawings.

[0035] (1) Structure of substrate processing apparatus

[0036] use Figure 1 to Figure 4 A schematic structure of a substrate processing apparatus according to one embodiment of the present disclosure will be described. Figure 1 is a side sectional view of the substrate processing apparatus 100, Figure 2 yes Figure 1 Here, for the convenience of explanation, the nozzle 223 and the nozzle 225 are additionally described.

[0037] The substrate processing apparatus 100 includes a housing 201 , and the housing 201 includes a reaction tube storage chamber 206 and a transfer chamber 217 . The reaction tube storage chamber 206 is disposed above the transfer chamber 217 .

[0038] The reaction tube storage chamber 206 includes a cylindrical reaction tube 210 extending in the vertical direction, a heater 211 as a heating unit (furnace body) provided on the outer periphery of the reaction tube 210, a gas supply structure 212 as a gas supply unit, and a gas exhaust structure 213 as a gas exhaust unit. Here, the reaction tube 210 is also referred to as a processing chamber, and the space in the reaction tube 210 is also referred to as a processing space. The reaction tube 210 can store a substrate support unit 300 described later.

[0039] The heater 211 is provided with a resistance heater on the inner surface opposite to the reaction tube 210 side, and a heat insulating portion is provided in a manner to surround them. Therefore, the heat effect is reduced on the outer side of the heater 211, that is, on the side not opposite to the reaction tube 210. The resistance heater of the heater 211 is electrically connected to the heater control unit 211a. The heater 211 is controlled by the heater control unit 211a, and the on / off and heating temperature of the heater 211 can be controlled. The heater 211 can heat the gas described later to a temperature at which it can be thermally decomposed. In addition, the heater 211 is also called a processing chamber heating unit or a first heating unit.

[0040] The reaction tube storage chamber 206 includes a reaction tube 210, an upstream rectifying section 214, and a downstream rectifying section 215. The gas supply section may include the upstream rectifying section 214. The gas exhaust section may include the downstream rectifying section 215.

[0041] The gas supply structure 212 is provided upstream of the reaction tube 210 in the gas flow direction, and gas is supplied to the reaction tube 210 from the gas supply structure 212. The gas exhaust structure 213 is provided downstream of the reaction tube 210 in the gas flow direction, and gas in the reaction tube 210 is exhausted from the gas exhaust structure 213.

[0042] An upstream rectifying section 214 for regulating the flow of gas supplied from the gas supply structure 212 is provided between the reaction tube 210 and the gas supply structure 212. That is, the gas supply structure 212 is adjacent to the upstream rectifying section 214. In addition, a downstream rectifying section 215 for regulating the flow of gas exhausted from the reaction tube 210 is provided between the reaction tube 210 and the gas exhaust structure 213. The lower end of the reaction tube 210 is supported by a manifold 216.

[0043] The reaction tube 210, the upstream rectifying section 214, and the downstream rectifying section 215 are continuous structures, and are formed of materials such as quartz, SiC, etc. They are composed of heat-transmitting members that transmit the heat radiated from the heater 211. The heat of the heater 211 heats the substrate S and the gas.

[0044] The shell constituting the gas supply structure 212 is made of metal, and the shell 227 as a part of the upstream side rectifying section 214 is made of quartz, etc. The gas supply structure 212 and the shell 227 can be separated, and when fixed, they are fixed via an O-ring 229. The shell 227 is connected to the connecting portion 206a on the side of the reaction tube 210.

[0045] When viewed from the reaction tube 210 side, the housing 227 extends in a direction different from the reaction tube 210 and is connected to a gas supply structure 212 described later. The heater 211 and the housing 227 are adjacent to each other at an adjacent portion 227b between the reaction tube 210 and the gas supply structure 212. The adjacent portion is referred to as an adjacent portion 227b.

[0046] When viewed from the reaction tube 210, the gas supply structure 212 is disposed at a position that is closer to the inside than the adjacent portion 227b. The gas supply structure 212 includes a distribution portion 224 that can be connected to a gas supply pipe 261 described later, and a distribution portion 222 that can be connected to a gas supply pipe 251. A plurality of nozzles 223 are disposed on the downstream side of the distribution portion 222, and a plurality of nozzles 225 are disposed downstream of the distribution portion 224. Each nozzle is provided with a plurality of nozzles in the vertical direction. Figure 1 The dispensing unit 222 and the nozzle 223 are described therein.

[0047] As described later, the distribution unit 222 can distribute the raw material gas, and is therefore also referred to as a raw material gas distribution unit. The nozzle 223 supplies the raw material gas, and is therefore also referred to as a raw material gas supply nozzle.

[0048] In addition, the distribution unit 224 can distribute the reaction gas, and is therefore also referred to as a reaction gas distribution unit. The nozzle 225 supplies the reaction gas, and is therefore also referred to as a reaction gas supply nozzle.

[0049] The gas supply pipe 251 and the gas supply pipe 261 supply different types of gases as described below. Figure 2 As shown, the nozzle 223 and the nozzle 225 are arranged in a horizontally arranged relationship. Here, in the horizontal direction, the nozzle 223 is arranged at the center of the housing 227, and the nozzles 225 are arranged on both sides thereof. The nozzles arranged on both sides are respectively referred to as nozzles 225a and 225b.

[0050] The partition plate 226 is a continuous structure without holes. Each partition plate 226 is set at a position corresponding to the substrate S. Nozzles 223 and nozzles 225 are set between the partition plates 226 and between the partition plate 226 and the housing 227. That is, the nozzle 223 and the nozzle 225 are set at least for each partition plate 226. By setting it as such a structure, a process using the first gas and the second element-containing gas can be performed between each partition plate 226 and between the partition plate 226 and the housing 227. Therefore, it is possible to make the processing between multiple substrates S uniform.

[0051] In addition, it is preferred that the distances between each partition plate 226 and the nozzle 223 disposed above the partition plate 226 are the same. That is, the nozzle 223 is configured to be at the same height as the partition plate 226 or the housing 227 disposed below the partition plate 226. Thus, the distances from the front end of the nozzle 223 to the partition plate 226 can be made the same, so that the resolution on the substrate S can be made uniform among a plurality of substrates.

[0052] The gas blown from the nozzles 223 and 225 is supplied to the surface of the substrate S by adjusting the gas flow through the partition plate 226. The partition plate 226 is a continuous structure extending in the horizontal direction and having no holes, so the movement of the main flow of the gas in the vertical direction is suppressed and moves in the horizontal direction. Therefore, the pressure loss of the gas reaching each substrate S can be made uniform in the vertical direction.

[0053] In this embodiment, the diameter of the blow-out hole 222 c provided in the distribution portion 222 is configured to be smaller than the distance between the partition plates 226 or the distance between the housing 227 and the partition plate 226 .

[0054] The downstream side rectifying portion 215 is configured such that, when the substrate S is supported by the substrate support portion 300 , the top plate is higher than the position of the uppermost substrate S arranged thereon, and the bottom plate is lower than the position of the lowermost substrate S arranged thereon.

[0055] The downstream side rectifying section 215 has a shell 231 and a dividing plate 232. The portion of the dividing plate 232 that is opposite to the substrate S extends in the horizontal direction in a manner that is at least larger than the diameter of the substrate S. The horizontal direction mentioned here refers to the side wall direction of the shell 231. Moreover, a plurality of dividing plates 232 are provided in the vertical direction. The dividing plate 232 is fixed to the side wall of the shell 231, and is configured so that the gas will not exceed the dividing plate 232 and move to the adjacent area below or above. By setting it not to exceed, the gas flow described later can be reliably formed. A flange 233 is provided on the side of the shell 231 that contacts the gas exhaust structure 213.

[0056] The dividing plate 232 is a continuous structure without holes. The dividing plate 232 is arranged at positions corresponding to the substrate S and at positions corresponding to the dividing plate 226. Preferably, the corresponding dividing plates 226 and 232 are of the same height. Moreover, it is preferred that the height of the substrate S is consistent with the height of the dividing plates 226 and 232 when processing the substrate S. By setting such a structure, the gas supplied from each nozzle forms a flow passing through the dividing plate 226, the substrate S, and the dividing plate 232 as shown by the arrows in the figure. At this time, the dividing plate 232 is a continuous structure extending in the horizontal direction and without holes. By setting such a structure, the pressure loss of the gas discharged from each substrate S can be made uniform. Therefore, with respect to the gas flow of the gas passing through each substrate S, while suppressing the flow in the vertical direction, it is formed in the horizontal direction toward the exhaust structure 213.

[0057] By setting the dividing plate 226 and the dividing plate 232, the pressure loss can be made uniform in the vertical direction upstream and downstream of each substrate S, so that a horizontal gas flow that suppresses the flow in the vertical direction can be reliably formed on the dividing plate 226, the substrate S, and the dividing plate 232.

[0058] The gas exhaust structure 213 is provided downstream of the downstream side rectifying section 215. The gas exhaust structure 213 is mainly composed of a casing 241 and a gas exhaust pipe connection section 242. A flange 243 is provided on the casing 241 on the downstream side rectifying section 215 side.

[0059] The gas exhaust structure 213 is connected to the space of the downstream side rectifying section 215. The shell 231 and the shell 241 are highly continuous structures. The top plate of the shell 231 is configured to be the same height as the top plate of the shell 241, and the bottom of the shell 231 is configured to be the same height as the bottom of the shell 241.

[0060] The gas having passed through the downstream side rectifying section 215 is exhausted from the exhaust hole 244. At this time, since the gas exhaust structure does not have a structure such as a partition plate, a gas flow including a vertical direction is formed toward the gas exhaust hole.

[0061] The transfer chamber 217 is provided at the lower part of the reaction tube 210 via the manifold 216. In the transfer chamber 217, a substrate S is placed (mounted) on a substrate support (hereinafter, sometimes also referred to as a wafer boat) 300 by a vacuum transfer robot (not shown), or a substrate S is taken out from the substrate support 300 by a vacuum transfer robot.

[0062] The transfer chamber 217 can store the substrate support 300, the partition plate support 310, and the vertical direction driving mechanism 400, which constitutes a first driving unit for driving the substrate support 300 and the partition plate support 310 in the vertical direction and the rotation direction (collectively referred to as the substrate holder). Figure 1 , the substrate holder 300 is shown to be held in the reaction tube after being raised by the vertical direction driving mechanism 400 .

[0063] Next, use Figure 3 The details of the gas supply system are described.

[0064] like Figure 3 As described in (a), on the gas supply pipe 251, a first gas source 252, a mass flow controller (MFC) 253 as a flow controller (flow control unit), and a valve 254 as an opening and closing valve are provided in sequence from the upstream direction.

[0065] The first gas source 252 is a source of a first gas containing a first element (also referred to as a "first element-containing gas"). The first gas is a raw material gas, that is, one of the process gases.

[0066] The first gas supply system 250 is mainly composed of the gas supply pipe 251, the MFC 253, and the valve 254. The gas supply pipe 251 is connected to the introduction pipe 222b of the distribution unit 222.

[0067] A gas supply pipe 255 is connected to the downstream side of the valve 254 in the supply pipe 251. The gas supply pipe 255 is provided with an inert gas source 256, an MFC 257, and a valve 258 as an on-off valve in order from the upstream direction. The inert gas source 256 supplies the inert gas.

[0068] The first inert gas supply system is mainly composed of the gas supply pipe 255, the MFC 257, and the valve 258. The inert gas supplied from the inert gas source 256 functions as a purge gas for purging the gas retained in the reaction tube 210 during the substrate processing step. The first inert gas supply system 250 may also be added.

[0069] like Figure 3As shown in (b), a second element-containing gas source 262, an MFC 263 as a flow controller (flow control unit), and a valve 264 as an opening and closing valve are sequentially provided on the gas supply pipe 261 from the upstream direction. The gas supply pipe 261 is connected to the introduction pipe 224b of the distribution unit 224.

[0070] The second element-containing gas source 262 is also referred to as a second element-containing gas source containing the second element. The second element-containing gas is one of the processing gases. In addition, the second element-containing gas can also be considered as a reaction gas or a modified gas.

[0071] The second gas supply system 260 is mainly composed of a gas supply pipe 261 , an MFC 263 , and a valve 264 .

[0072] A gas supply pipe 265 is connected to the downstream side of the valve 264 in the supply pipe 261. The gas supply pipe 265 is provided with an inert gas source 266, an MFC 267, and a valve 268 as an on-off valve in order from the upstream direction. The inert gas source 266 supplies the inert gas.

[0073] The second inert gas supply system is mainly composed of the gas supply pipe 265, the MFC 267, and the valve 268. The inert gas supplied from the inert gas source 266 functions as a purge gas for purging the gas retained in the reaction tube 210 during the substrate processing step. The second inert gas supply system may also be added to the second element-containing gas supply system 260.

[0074] It is preferable that no obstruction that obstructs the flow of the supplied gas is provided between the nozzles 223 and 225 and the substrate S.

[0075] Next, use Figure 6 to Figure 11 The structure of the gas supply structure 212 will be described. Figure 6 It is a cross-sectional view illustrating a gas supply structure according to one embodiment of the present disclosure. Figure 7 It is a perspective view of the front and back surfaces of the first component and the second component of one embodiment of the present disclosure. Figure 8 This is a partial perspective view of the back surface of the first component and the second component of one embodiment of the present disclosure. Fig. 9 It is an explanatory diagram for explaining a first purge gas path and a second purge gas path according to one embodiment of the present disclosure. Fig.10 It is an explanatory diagram for explaining a purge gas supply system according to one embodiment of the present disclosure. Fig.11 is oxygen (O 2 Here, the gas supply structure 212 is used as a structural example to illustrate the method for reducing the oxygen (O 2 ) Technology that reduces the risk of penetration through the connection part of the opening of the vacuum container.

[0076] like Figure 6 As shown in FIG. 2 , the gas supply structure 212 and the housing 227 can be separated, and when fixed, they are fixed via an O-ring 229. That is, the opening of the vacuum container (reaction tube 210) formed by the housing 227 is connected to the gas supply structure 212. Therefore, oxygen (O 2 ) permeation risk increases. 2 ) to reduce the risk of gas penetration, the gas supply structure 212 has the following structure.

[0077] The gas supply structure 212 is composed of a first component 901 and a second component 902. Fig.10 As shown, the first member 901 and the second member 902 are each formed of a flat plate such as a rectangular plate.

[0078] The first member 901 has a surface 901a and a back surface 901b opposite to the surface 901a. The second member 902 has a surface 902a and a back surface 902b opposite to the surface 902a. The back surface 901b is connected to the surface 902a. The back surface 902b is connected to the housing 227 as the third member.

[0079] like Figure 6 As schematically shown in FIG. 2 , the gas supply structure 212 is configured such that gas supply pipes 251 , 261 connected to the gas supply parts 250 , 260 are connected to the nozzles 223 , 225 via the distribution parts 222 , 224 , and can supply the raw material gas and the reaction gas to the reaction tube 210 .

[0080] A first sealing member 904o1 is provided between the back side 901b and the surface 902a so as to surround the distribution portions 222 and 224. That is, the first sealing member 904o1 is provided between the back side 901b of the first member 901 and the surface 902a of the second member 902, and has a flow path (222 and 224) for the processing gas inside. In addition, on the back side 901b, a second purge gas path (second gas path) 912 is arranged along the periphery of the first sealing member 904o1, and is configured so that the purge gas flows inside the second purge gas path 912. Moreover, a third sealing member 904o2 is arranged along the periphery of the second purge gas path 912 between the back side 901b and the surface 902a. The second purge gas path 912 is formed by blocking the recess provided on the back side 901b of the first member 901 with the surface 902a of the second member 902.

[0081] In addition, a second sealing member 229o1 is provided between the back side 902b and the housing 227 so as to surround the distribution parts 222 and 224. The second sealing member 229o1 is provided so as to be located between the back side 902b of the second member 902 and the housing 227, and has a flow path (222 and 224) of the processing gas inside. In addition, on the back side 902b, a first purge gas path (first gas path) 910 is arranged along the periphery of the second sealing member 229o1, and is configured so that the purge gas flows inside the first purge gas path 910. Moreover, a fourth sealing member 229o2 is arranged along the periphery of the first purge gas path 910 between the back side 902b and the housing 227. The first purge gas path 910 is configured by blocking a recessed portion provided on the back side 902b of the second member 902 with the surface (side) of the housing 227.

[0082] Reference Figure 6 A third purge gas path (third gas path) 913 connecting the first purge gas path 910 and the second purge gas path 912 is provided in the second component 902. In addition, a purge gas supply portion (a supply port for supplying the second gas) 914in for supplying a purge gas (an inert gas) as a second gas to the first purge gas path 910, and a purge gas discharge portion (an discharge port for discharging the second gas) 914ot for discharging the purge gas from the second purge gas path 912 are provided in the first component 901. The purge gas supply portion 914in and the purge gas discharge portion 914ot are arranged adjacent to each other. As will be described later Fig.10 As described in the above, the purge gas supply unit 914in is connected to the purge gas supply system (second gas supply unit) 270 and is configured to supply an inert gas, such as nitrogen (N 2 The purge gas supplied from the purge gas supply unit 914in flows along the first purge gas path 910→the third purge gas path 913→the second purge gas path 912, and is discharged from the purge gas discharge unit 914ot.

[0083] Here, the purge gas is configured such that the flow direction of the purge gas is different from the flow direction of the process gas as the first gas in the first purge gas path 910 and the second purge gas path 912. Figure 6 In the cross-section A, when the flow direction of the purge gas in the first purge gas path 910 is set to a first direction (counterclockwise when observed along the flow direction of the processing gas), the flow direction of the purge gas in the second purge gas path 912 is a second direction different from the first direction (clockwise when observed along the flow direction of the processing gas).

[0084] exist Figure 7 , a stereoscopic view when observing the surface side (901a, 902a) of the first component 901 and the second component 902 constituting the gas supply structure (gas supply unit) 212 and a stereoscopic view when observing the back side (901b, 902b) of the first component 901 and the second component 902 are shown. On the surface 901a of the first component, a purge gas supply port (second gas supply port) 914in and a purge gas exhaust port (second gas exhaust port) 914ot are arranged adjacent to each other. In addition, gas supply ports 251, 261 are arranged on the surface 901a of the first component. Distribution parts 222, 224 are provided on the surface 902a and the back side 901b, 902b. The processing gas or raw material gas (first gas) supplied from the gas supply parts (first gas supply parts) 250, 260 flows into the respective distribution parts 222, 224 of the first component 901 and the second component 902 via the gas supply ports (first gas supply ports) 251, 261.

[0085] exist Figure 8 In, it is expressed Figure 7 An enlarged stereogram of regions RR1 and RR2 and the flow of the purge gas. Figure 8 As shown, a region where the first sealing member 904o1 is arranged and a region where the third sealing member 904o2 is arranged are provided on the back side 901b, and a second purge gas path 912 is provided between the region where the first sealing member 904o1 is arranged and the region where the third sealing member 904o2 is arranged. A region where the second sealing member 229o1 is arranged and a region where the fourth sealing member 229o2 is arranged are provided on the back side 902b, and a first purge gas path 910 is provided between the region where the second sealing member 229o1 is arranged and the region where the fourth sealing member 229o2 is arranged.

[0086] The purge gas (second gas) from the purge gas supply unit 914in flows toward the opening P2 of the second component 902 via the opening P1 of the first component 901, and flows along the outer periphery of the first sealing component 904o1 (to the left in the figure) toward the first purge gas path 910. The purge gas then makes a roughly one-way circle along the outer periphery of the first sealing component 904o1, and reaches the opening P3 of the second component 902 from the bottom.

[0087] The purge gas reaching the opening P3 reaches the region P4 of the second member 902 via the third purge gas path 913. That is, the third purge gas path 913 is provided between the opening P3 and the region P4.

[0088] The purge gas reaching the area P4 flows along the outer periphery of the second sealing member 229o1 (toward the lower left in the figure) to the second purge gas path 912. The purge gas also makes a roughly circular motion along the outer periphery of the second sealing member 229o1 and reaches the opening P5 of the second member 902 from the right side. The purge gas reaching the opening P5 is discharged from the purge gas discharge portion 914ot.

[0089] exist Fig. 9 FIG. 9 shows the overall flow of the purge gas in the first purge gas path 910 and the second purge gas path 920. Figure 8 The path of the purge gas flow is described in , so repeated description is omitted.

[0090] The flow path of the purge gas is from the second part 902 as the inner plate to the first part 901 as the outer plate. When the temperature of the inner plate (902) is high, 2 The risk of permeation increases, but the purge gas, which is a cooling gas, can flow to the inner plate (902). Therefore, by allowing the purge gas to flow to the inner plate (902) with a high temperature first, the temperature of the inner plate (902) can be lowered. 2 of penetration risk.

[0091] In order to reduce as many areas as possible where the purge gas does not flow, the purge gas supply portion 914in and the purge gas discharge portion 914ot are arranged close to each other. As a result, the flow directions of the purge gas are opposite in the inner plate (902) and the outer plate (901). Since the gas flows in opposite directions, the cooling temperatures of the components of the inner plate (902) and the outer plate (901) by the purge gas can be averaged.

[0092] like Fig.10 As shown in FIG. 1 , an inert gas source 276, an MFC 277, and a valve 278 as an on-off valve are provided in order from the upstream direction on the gas supply pipe 271. An inert gas such as nitrogen (N 2 )gas.

[0093] The purge gas supply system 270 is mainly composed of a gas supply pipe 271, an inert gas source 276, an MFC 277, and a valve 278. The gas supply pipe 271 is connected to the purge gas supply unit 914in, and the inert gas supplied from the inert gas source 276 functions as a purge gas supplied to the first purge gas path 910 and the second purge gas path 920 in the substrate processing process.

[0094] according to Fig.11 The results of the various calibration lines shown in the graph are 2When the permeation amount of N is about 0.02 sccm, the influence of permeation into the processing chamber 210 disappears by diluting the gas by more than ×100. 2 The flow rate is preferably set to 2-400 sccm. 2 When the flow rate is less than 2sccm, it is impossible to reduce the O 2 On the other hand, when N 2 When the flow rate is more than 400 sccm, the pressure is relative to N 2 The flow paths (the first purge gas path 910, the second purge gas path 920, the third purge gas path 930, etc.) become higher, N 2 From N 2 The possibility of leakage to the outside (leakage amount) increases. In addition, a large amount of N 2 .

[0095] In addition, in this specification, the expression of a numerical range such as "2 to 200 sccm" means that the lower limit and the upper limit are included in the range. Therefore, for example, "2 to 400 sccm" means "2 sccm or more and 400 sccm or less". The same applies to other numerical ranges.

[0096] Next, use Figure 4 The substrate processing apparatus 100 includes a controller 600 for controlling the operation of each unit of the substrate processing apparatus 100 .

[0097] exist Figure 4 600 is schematically shown in FIG. The controller 600 as a control unit (control unit) is configured as a computer including a CPU (Central Processing Unit) 601, a RAM (Random Access Memory) 602, a storage unit 603 as a storage unit, and an I / O port 604. The RAM 602, the storage unit 603, and the I / O port 604 are configured to be able to exchange data with the CPU 601 via an internal bus 605. The transmission and reception of data in the substrate processing apparatus 100 is performed by instructions of a transmission and reception instruction unit 606 which is also a function of the CPU 601.

[0098] The controller 600 is provided with a network transceiver 683 connected to the host device 670 via a network. The network transceiver 683 can receive the processing history of the substrates S stored in the wafer container 111, information related to the processing plan, and the like from the host device.

[0099] The storage unit 603 is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. The storage unit 603 stores a control program for controlling the operation of the substrate processing apparatus, a process recipe describing the steps and conditions of substrate processing, etc. in a readable manner.

[0100] In addition, the process recipe is a combination of the controller 600 to perform each step in the substrate processing process described later and obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, control program, etc. are collectively referred to as just a program. In addition, when the term "program" is used in this specification, there are cases where only the process recipe itself is included, only the control program itself is included, or both are included. In addition, the RAM 602 is configured as a memory area (work area) for temporarily holding programs, data, etc. read by the CPU 601.

[0101] The I / O port 604 is connected to each structure of the substrate processing apparatus 100. The CPU 601 is configured to read and execute the control program from the storage unit 603, and read the process recipe from the storage unit 603 according to the input of the operation command from the input / output device 681. In addition, the CPU 601 is configured to control the substrate processing apparatus 100 according to the content of the read process recipe.

[0102] CPU601 has a sending and receiving instruction unit 606. The controller 600 can constitute the controller 600 of this method by installing the program on a computer, etc. using an external storage device (for example, a disk such as a hard disk, an optical disk such as a DVD, an optical disk such as an MO, a semiconductor memory such as a USB memory) 682 that stores the above-mentioned program. In addition, the means for supplying the program to the computer is not limited to the case of supplying via the external storage device 682. For example, a communication unit such as the Internet or a dedicated line can also be used to supply the program without the external storage device 682. In addition, the storage unit 603 and the external storage device 682 are configured as a computer-readable storage medium. Hereinafter, they will be collectively referred to as storage media only. In addition, in this specification, when the term storage medium is used, there is a case where only the storage unit 603 itself is included, only the external storage device 682 itself is included, or both are included.

[0103] Next, as a process of manufacturing a semiconductor device (substrate processing method), i.e., a process of forming a thin film on a substrate S using the substrate processing apparatus 100 having the above-mentioned structure, will be described. In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 600.

[0104] Here, use Figure 5A film forming process of forming a film on the substrate S by using the first gas and the second element-containing gas and supplying them alternately will be described.

[0105] (S202)

[0106] The transfer chamber pressure adjustment step S202 is described. Here, the pressure in the transfer chamber 217 is set to the same level as the pressure in the vacuum conveying chamber 140. Specifically, the exhaust system (not shown) connected to the transfer chamber 217 is operated to exhaust the atmosphere in the transfer chamber 217 so that the atmosphere in the transfer chamber 217 becomes a vacuum level.

[0107] In addition, the heater 282 may be operated in parallel with this step. Specifically, the heater 282a and the heater 282b may be operated separately. When the heater 282 is operated, the heater 282 is operated at least during the film treatment step 208 described later.

[0108] (S204)

[0109] Next, the carrying-in step S204 will be described.

[0110] After the transfer chamber 217 reaches the vacuum level, the substrate S is transferred. After the substrate S reaches the vacuum transfer chamber 140 , a gate valve (not shown) adjacent to the substrate transfer port 149 is opened, and the substrate S is transferred into the transfer chamber 217 from an adjacent vacuum transfer chamber (not shown).

[0111] At this time, the substrate support 300 is on standby in the transfer chamber 217, and the substrate S is transferred to the substrate support 300. After a predetermined number of substrates S are transferred to the substrate support 300, the vacuum transfer robot is retracted to the housing 141, and the substrate support 300 is raised to move the substrate S into the reaction tube 210.

[0112] During the movement into the reaction tube 210 , the surface of the substrate S is positioned to coincide with the heights of the partition plates 226 and 232 .

[0113] (S206)

[0114] The heating process S206 is described. After the substrate S is moved into the reaction tube 210, the reaction tube 210 is controlled in a manner such that the pressure inside is a predetermined pressure, and the heater 211 is controlled in a manner such that the surface temperature of the substrate S is a predetermined temperature. The temperature is a high temperature zone described later, for example, heated to above 400°C and below 800°C. It is preferably above 500°C and below 700°C. The pressure is considered to be set to 50 to 5000 Pa, for example. At this time, when the upstream heating section 228 is operated, the gas passing through the distribution section 222 is heated to a temperature in the low decomposition temperature zone or the undecomposed temperature zone described later and is no longer liquefied. For example, the gas is heated to about 300°C.

[0115] In addition, at this time, according to the process, the MFC 277 and the valve 278 are controlled to supply the purge gas from the inert gas source 276 from the gas supply pipe 271 to the first purge gas path 910 and the second purge gas path 920. The supply of the purge gas from the inert gas source 276 is continued at least until the film treatment step S208 described later is completed.

[0116] (S208)

[0117] The film treatment process S208 is described. After the heating process S206, the film treatment process of S208 is performed. In the film treatment process S208, according to the process recipe, the first gas supply system 250 is controlled to supply the first gas into the reaction tube 210, and the exhaust system 280 is controlled to exhaust the treatment gas from the reaction tube 210 to perform film treatment. In addition, here, the second element-containing gas supply system 260 may be controlled so that the second element-containing gas and the first gas are simultaneously present in the treatment space to perform CVD treatment, or the first gas and the second element-containing gas may be alternately supplied into the reaction tube 210 to perform alternating supply treatment. In addition, when the second element-containing gas is set to a plasma state for treatment, it may be set to a plasma state using a plasma generating unit not shown.

[0118] As a specific example of the film treatment method, namely, the alternating supply treatment, the following method can be considered. For example, in the first step, the first gas is supplied into the reaction tube 210, and in the second step, the second element-containing gas is supplied into the reaction tube 210, and as a purge step, nitrogen (N) as an inert gas is supplied into the reaction tube 210 between the first step and the second step. 2 ) gas, and exhaust the atmosphere of the reaction tube 210, and perform a combination of the first step, the purge step, and the second step for multiple alternating supply processes to form a desired film.

[0119] The supplied gas forms a gas flow in the upstream rectifying section 214, the space on the substrate S, and the downstream rectifying section 215. At this time, since the gas is supplied to the substrate S without pressure loss on each substrate S, each substrate S can be processed uniformly.

[0120] (S210)

[0121] The substrate unloading step S210 is described below. In S210, the processed substrate S is unloaded out of the transfer chamber 217 in a procedure opposite to the above-mentioned substrate loading step S204.

[0122] (S212)

[0123] Determination S212 is described. Here, it is determined whether the substrate has been processed a predetermined number of times. If it is determined that the substrate has not been processed a predetermined number of times, the process returns to the loading step S204 to process the next substrate S. If it is determined that the substrate has been processed a predetermined number of times, the process ends.

[0124] In the above, the gas flow is expressed as being horizontal, but as long as the mainstream of the gas is formed in the horizontal direction as a whole, the gas flow may be diffused in the vertical direction as long as it does not affect the uniform processing of multiple substrates.

[0125] In addition, in the above, there are expressions such as the same degree, the same, and the equivalent, which of course include substantially the same.

[0126] As mentioned above, although embodiment of this aspect was specifically described, it is not limited to this, Various changes can be made within the range which does not deviate from the summary.

[0127] In addition, for example, in the above-mentioned embodiments, the case where a film is formed on a substrate S using a first gas and a second element-containing gas in a film forming process performed by a substrate processing apparatus is cited as an example, but the present method is not limited thereto. That is, other types of gases may be used as processing gases for film forming processes to form other types of thin films. Furthermore, even when three or more processing gases are used, the present method can be applied as long as they are alternately supplied to perform film forming processes.

[0128] Here, the first gas may contain silicon and have Si-Si bonds, but is not limited thereto. For example, tetrachlorodimethyldisilane ((CH 3 ) 2 Si 2 Cl 4 , referred to as: TCDMDS), hexachlorodisilane (Si 2 Cl 6 , referred to as: HCDS), dichlorotetramethyldisilane ((CH 3 )4 Si 2 Cl 2 , referred to as: DCTMDS). TCDMDS has a Si-Si bond and also contains a chlorine group and an alkylene group. In addition, DCTMDS has a Si-Si bond and also contains a chlorine group and an alkylene group. In addition, as the first element, various elements such as titanium (Ti), silicon (Si), zirconium (Zr), and hafnium (Hf) may also be used.

[0129] The second element-containing gas contains a second element different from the first element. The second element may be any one of oxygen (O), nitrogen (N), and carbon (C). In the present embodiment, the second element-containing gas may be a nitrogen-containing gas. Specifically, ammonia (NH 3 ), diazene (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) Gas, N 3 H 8 Gas such as hydrogen nitride gas containing NH bond.

[0130] In the above-mentioned method, an example of forming a film using a batch-type substrate processing device that processes a plurality of substrates at a time is described. The present disclosure is not limited to the above-mentioned method, and for example, it can also be appropriately applied when a film is formed using a single-piece substrate processing device that processes one or several substrates at a time. In addition, in the above-mentioned method, an example of forming a film using a substrate processing device having a hot-wall type processing furnace is described. The present disclosure is not limited to the above-mentioned method, and it can also be appropriately applied when a film is formed using a substrate processing device having a cold-wall type processing furnace.

[0131] In addition, in the above-mentioned method, as a process performed by the substrate processing device, a film forming process is cited as an example, but the present method is not limited to this. That is, in addition to the film forming process cited as an example in each embodiment, the present method can also be applied to film forming processes other than the thin film exemplified in each embodiment. In addition, a part of the structure of a certain embodiment can be replaced with the structure of another embodiment, and in addition, the structure of another embodiment can be added to the structure of a certain embodiment. In addition, for a part of the structure of each embodiment, other structures can also be added, deleted, or replaced.

[0132] Explanation of symbols

[0133] 100—substrate processing device; 210—reaction tube (processing chamber); 212—gas supply structure; 227—shell (third component); 250, 260—first gas supply part; 270—second gas supply part; 901—first component; 902—second component; 904o1—first sealing component; 229o1—second sealing component; 910—first purge gas path (first gas path); 912—second purge gas path (second gas path).

Claims

1. A substrate processing device, characterized in that: have: a first gas supply unit that supplies a first gas; a first member that allows the first gas from the first gas supply portion to flow; a second component that communicates the first gas from the first component; a third component that communicates the first gas from the second component; a process chamber supplied with the first gas from the third member; a first sealing member located between the first member and the second member; a second sealing member located between the second member and the third member; a second gas supply unit that supplies a second gas; a first gas path disposed along the second sealing member and allowing the second gas to flow; as well as The second gas path is arranged along the first sealing member and allows the second gas to flow.

2. The substrate processing device according to claim 1, characterized in that: A third gas path through which the second gas flows is provided between the first gas path and the second gas path.

3. The substrate processing device according to claim 1, characterized in that: The first gas path is provided between the second component and the third component.

4. The substrate processing device according to claim 1, characterized in that: The second gas path is disposed between the first component and the second component.

5. The substrate processing apparatus according to claim 1, wherein: A flow direction of the second gas flowing in the first gas path is different from a flow direction of the second gas flowing in the second gas path.

6. The substrate processing apparatus according to claim 1, wherein: The first gas supply unit is connected to the first member.

7. The substrate processing apparatus according to claim 1, wherein: The second gas supply unit is connected to the first member.

8. The substrate processing apparatus according to claim 1, wherein: An exhaust unit for exhausting the second gas is provided.

9. The substrate processing device according to claim 8, characterized in that: The exhaust portion is connected to the first member.

10. The substrate processing apparatus according to claim 8, wherein: The second gas supply unit and the exhaust unit are connected to the first member.

11. The substrate processing apparatus according to claim 10, wherein: The supply port for supplying the second gas is provided adjacent to the exhaust port for exhausting the second gas.

12. The substrate processing apparatus according to claim 1, wherein: The first gas path is provided along the outer circumference of the second sealing member.

13. The substrate processing apparatus according to claim 1, wherein: The second gas path is provided along the outer circumference of the first sealing member.

14. The substrate processing apparatus according to claim 11, wherein: The second gas path is provided along the outer circumference of the first sealing member.

15. The substrate processing apparatus according to claim 1, wherein: The first gas is a processing gas.

16. The substrate processing apparatus according to claim 1, wherein: The second gas is a purge gas.

17. The substrate processing apparatus according to claim 1, wherein: The third component is a housing forming the process chamber.

18. A gas supply unit, characterized in that: have: a first gas supply unit that supplies a first gas; a first member that allows the first gas from the first gas supply portion to flow; a second component that communicates the first gas from the first component; a third component that communicates the first gas from the second component; a first sealing member located between the first member and the second member; a second sealing member located between the second member and the third member; a second gas supply unit that supplies a second gas; a first gas path disposed along the second sealing member and through which the second gas flows; and The second gas path is arranged along the first sealing member and flows the second gas.

19. A method for manufacturing a semiconductor device, characterized in that: have: The process of carrying the substrate into the processing chamber of the substrate processing apparatus, and supplying a first gas to process the substrate, The substrate processing device comprises: a first gas supply unit for supplying the first gas; a first member that allows the first gas from the first gas supply portion to flow; a second component that communicates the first gas from the first component; a third component that communicates the first gas from the second component; the process chamber supplied with the first gas from the third member; a first sealing member located between the first member and the second member; a second sealing member located between the second member and the third member; a second gas supply unit that supplies a second gas; a first gas path disposed along the second sealing member and through which the second gas flows; and The second gas path is arranged along the first sealing member and flows the second gas.

20. A program, characterized in that The computer enables the substrate processing device to perform the following steps: a step of moving a substrate into a processing chamber of the substrate processing apparatus, and supplying a first gas to process the substrate, The substrate processing device comprises: a first gas supply unit for supplying the first gas; a first member that allows the first gas from the first gas supply portion to flow; a second component that communicates the first gas from the first component; a third component that communicates the first gas from the second component; the process chamber supplied with the first gas from the third member; a first sealing member located between the first member and the second member; a second sealing member located between the second member and the third member; a second gas supply unit that supplies a second gas; a first gas path disposed along the second sealing member and through which the second gas flows; and The second gas path is arranged along the first sealing member and flows the second gas.

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