Exhaust structure, exhaust system, processing apparatus, and method for manufacturing semiconductor device

Abstract

The present invention is provided with: an exhaust pipe that exhausts the atmosphere in a processing chamber; a pressure detection unit which is provided in the exhaust pipe and detects the pressure inside the exhaust pipe; and a branch pipe that branches from the exhaust pipe and that has an opening / closing section that operates by receiving a signal from the pressure detection section and a valve section that prevents reverse flow to the exhaust pipe.

Description

Technical Field

[0001] The present disclosure relates to an exhaust structure, an exhaust system, a processing device, and a method for manufacturing a semiconductor device. Background Art

[0002] In a substrate processing device (hereinafter also referred to as a semiconductor manufacturing device) used in a semiconductor device manufacturing process, for example, dozens of flow controllers are installed in one device, and the efficient setting operation of these flow controllers is described in the following patent document 1. On the other hand, in the setting operation of the flow controller provided in the exhaust system, in the case where the pump and valve of the later stage are within the customer's range, it is difficult to confirm the vacuum state, and there is a case where the valve is not found to be closed, and gas is supplied to the exhaust system piping, and the exhaust piping becomes over-pressurized. In this way, over-pressurization protection in the reaction container is usually performed (patent document 2), and over-pressurization protection of the exhaust piping becomes necessary.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2019-186654

[0006] Patent Document 2: International Publication No. 2005-050725 Summary of the invention

[0007] Problems to be solved by the invention

[0008] The present disclosure provides a structure for protecting a pipe of an exhaust system from over-pressurization.

[0009] Means used to solve problems

[0010] According to one aspect of the present invention, there is provided a structure comprising the following components:

[0011] an exhaust pipe for exhausting the atmosphere of the processing chamber;

[0012] a pressure detection unit, which is disposed in the exhaust pipe and detects the pressure in the exhaust pipe; and

[0013] A branch pipe includes an opening and closing portion that is activated by receiving a signal from the pressure detection portion and a valve portion that prevents a backflow to the exhaust pipe, and the branch pipe branches from the exhaust pipe.

[0014] Effects of the Invention

[0015] According to the present disclosure, it is possible to protect the pipe of the exhaust system from over-pressurization. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1It is a diagram showing a configuration example of a processing furnace of a substrate processing apparatus to which one embodiment of the present disclosure is applied.

[0017] Figure 2 This is a block diagram showing a configuration example of a control module of a substrate processing apparatus to which one embodiment of the present disclosure is applied.

[0018] Figure 3 This is a diagram showing a configuration example of an exhaust system of a substrate processing apparatus to which one embodiment of the present disclosure is applied.

[0019] Figure 4 This is a diagram for explaining a sequence for adjusting components constituting a substrate processing apparatus to which one embodiment of the present disclosure is applied.

[0020] Figure 5 This is a diagram showing an example of the influence of an over-pressurized state of the exhaust system on the device. DETAILED DESCRIPTION

[0021] Hereinafter, one method of the present disclosure will be described with reference to the accompanying drawings. In addition, the drawings used in the following description are all schematic, and the dimensional relationship of the elements shown in the drawings, the proportion of the elements, etc. are not necessarily consistent with the actual ones. In addition, the dimensional relationship of the elements, the proportion of the elements, etc. are not necessarily consistent between multiple drawings. In addition, between multiple drawings, substantially the same elements are marked with the same symbols, and each element is described in the drawing where it first appears. In subsequent drawings, the description is omitted unless it is particularly necessary. Unless otherwise specified in the specification, each element is not limited to one, but can also be multiple.

[0022] (Treatment furnace)

[0023] Figure 1 The processing furnace 42 of the substrate processing apparatus used in this embodiment will be described. In this embodiment, the substrate processing apparatus is configured as a vertical substrate processing apparatus (hereinafter referred to as a processing apparatus) that performs a substrate processing step such as heat treatment as one step in a manufacturing method of a semiconductor device.

[0024] The processing furnace 42 includes a reaction tube 41. The reaction tube 41 is made of a heat-resistant non-metal material such as quartz (SiO2) or silicon carbide (SiC), and has a cylindrical shape with a closed upper end and an open lower end.

[0025] A processing chamber 34 is formed in the tube of the reaction tube 41. A wafer boat 30 as a substrate holder (substrate holder) is inserted from below into the processing chamber 34, and wafers 14 as substrates held in a horizontal position by the wafer boat 30 are accommodated in a state of being arranged in multiple stages in the plumb direction. The wafer boat 30 accommodated in the processing chamber 34 is rotated by a rotating mechanism 43 to rotate a rotating shaft 44, and can rotate in a state of carrying a plurality of wafers 14 while maintaining the airtightness of the processing chamber 34.

[0026] Below the reaction tube 41, a manifold 45 is arranged concentrically with the reaction tube 41. The manifold 45 is made of a metal material such as stainless steel, and is cylindrical with an upper end and a lower end open. The reaction tube 41 is supported longitudinally from the lower end side by the manifold 45. That is, the reaction tube 41 forming the processing chamber 34 is erected in the plumb direction via the manifold 45 to form the processing furnace 42. The lower end of the manifold 45 is hermetically sealed by a sealing cover 46 when the wafer boat elevator (not shown) rises. A sealing component 46a such as an O-ring that hermetically seals the processing chamber 34 is provided between the lower end of the manifold 45 and the sealing cover 46.

[0027] Furthermore, the manifold 45 is connected to a gas introduction pipe 47 for introducing a source gas, a purge gas, etc. into the processing chamber 34 , and an exhaust pipe 48 for exhausting the gas (atmosphere) in the processing chamber 34 .

[0028] A heating unit 49 as a heating means (heating mechanism) is disposed concentrically with the reaction tube 41 on the outer periphery of the reaction tube 41. The heating unit 49 heats the processing chamber 34 so that the processing chamber 34 has a uniform or predetermined temperature distribution throughout.

[0029] Figure 2 1 shows a configuration example of a control system of a substrate processing apparatus including an input / output device 31 and a control unit 32. The controller 260 includes at least the input / output device 31 and the control unit 32.

[0030] The control unit 32 is configured as a computer including a CPU (Central Processing Unit) 260a, a RAM (Random Access Memory) 260b, a storage device 260c, and an I / O port 260d. The RAM 260b, the storage device 260c, and the I / O port 260d can exchange data with the CPU 260a via an internal bus 260e.

[0031] The CPU 260a as a calculation unit reads and executes a control program from the storage device 260c, and reads a file from the storage device 260c according to an input of an operation command from the input / output device 31. In addition, the setting value input from the receiving unit 285 is compared / calculated with a file or control data stored in the storage device 260c, and calculation data can be calculated. In addition, the RAM 260b is configured as a memory area (work area) that temporarily stores the program, calculation data, processing data, etc. read by the CPU 260a.

[0032] The storage device 260c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. The storage device 260c contains a control program or various files for controlling the operation of the substrate processing device, data detected from various sensors, etc., and also stores in a readable manner the calculation data and processing data generated in the process until the process recipe used in the processing of the wafer 14 is set. The various files include screen files such as an editing interface for process editing, a setting screen for setting, an adjustment sequence of a component of an adjustment object used to switch multiple switches according to the type of gas, a process recipe that records the order and conditions of substrate processing, and a process for transporting the wafer 14.

[0033] The operation screen of the input-output device 31 displays an editing screen for creating an adjustment sequence under the same conditions as those used in initialization and a selection screen for selecting a component to be adjusted. For example, the input-output device 31 constituted as a touch panel or the like can be connected to an external storage device 262. Moreover, the controller 260 can be connected to a network 263 via a receiving unit 285. This means that the controller 260 can also be connected to a host device such as a host computer existing on the network 263. Therefore, if the input-output device 31 exists on the network 263, it can be connected to the controller 260. That is, the input-output device 31 is not limited to the above-mentioned embodiment, and can also be located at a place away from the substrate processing device.

[0034] Hereinafter, each file including the process recipe and the control program may be collectively referred to as a program. In addition, when the word "program" is used in this specification, it may include only the process recipe, only the control program, or both.

[0035] In addition, the controller 260 is not limited to being configured as a dedicated computer, and may also be configured as a general-purpose computer. For example, an external storage device 262 storing the above-mentioned program is prepared, and the program is installed on a general-purpose computer using the external storage device 262, so that the controller 260 in this embodiment can be configured. The external storage device 262 includes, for example, a magnetic tape, a magnetic disk such as a floppy disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card.

[0036] The means for supplying the program to the computer is not limited to supplying via the external storage device 262. For example, the program may be supplied not via the external storage device 262 but using a communication means such as the network 263 (Internet or a dedicated line).

[0037] In addition, the storage device 260c and the external storage device 262 are configured as a computer-readable recording medium. Hereinafter, these are also collectively referred to as recording media. In addition, when the term recording medium is used in this specification, there are cases where only the storage device 260c is included, only the external storage device 262 is included, or both are included.

[0038] Next, the substrate processing apparatus of this embodiment is used as a process of manufacturing a semiconductor device. Figure 1 and Figure 2 The operation sequence for performing processing on the wafer 14 will be described.

[0039] (Box conveying process)

[0040] When the substrate processing apparatus processes the wafers 14, first, a cassette accommodating a plurality of wafers 14 is placed on a cassette stage. Then, the cassette is transferred from the cassette stage to the rotary cassette rack by the cassette transfer device 20.

[0041] (Wafer supply process)

[0042] Thereafter, the cassette placed on the rotary cassette rack is transported to the cassette opener by the cassette transport device 20. Next, the cassette cover is opened by the cassette opener, and the number of wafers 14 accommodated in the cassette is detected by the substrate number detector.

[0043] (Loading process before loading)

[0044] After the cassette cover is opened, the substrate transfer machine 28 disposed in the transfer chamber takes out the wafer 14 from the cassette. Then, the unprocessed wafer 14 taken out from the cassette is transferred to the wafer boat 30 located in the same transfer chamber as the substrate transfer machine 28. That is, the substrate transfer machine 28 performs a wafer charging operation in the transfer chamber to charge the unprocessed wafer 14 into the wafer boat 30 before being carried into the processing chamber 34. Thus, the wafer boat 30 holds a plurality of wafers 14 in a stacked state with intervals formed in the plumb direction.

[0045] (Loading process)

[0046] After the wafer loading operation, the boat 30 holding a plurality of unprocessed wafers 14 is moved into the processing chamber 34 (boat loading) by the boat elevator. That is, the boat elevator is operated to move the boat 30 holding the unprocessed wafers 14 from the transfer chamber to the processing chamber 34. As a result, the sealing cap 46 seals the lower end of the manifold 45 via the sealing member 46a.

[0047] (Processing process)

[0048] After the wafer boat is loaded, the wafer 14 in the unprocessed state held by the wafer boat 30 moved into the processing chamber 34 is subjected to a predetermined treatment. Specifically, the exhaust pipe 48 is used to exhaust the air so that the processing chamber 34 is at a desired pressure (vacuum degree). Next, the processing chamber 34 is heated by the heating unit 49, and the rotating mechanism 43 is operated to rotate the wafer boat 30, and the wafer 14 is also rotated accordingly. In addition, raw material gas and purge gas are supplied into the processing chamber 34 through the gas introduction pipe 47. Thus, a thin film is formed on the surface of the unprocessed wafer 14 held in the wafer boat 30, for example, by a decomposition reaction based on heat and a chemical reaction.

[0049] After the thin film formation on the surface of the wafer 14 is completed, the heating of the heating unit 49 is stopped, and the temperature of the processed wafer 14 is cooled to a predetermined temperature. Then, after a predetermined time has passed, the gas supply to the processing chamber 34 is stopped, and the supply of the inert gas to the processing chamber 34 is started. Thus, the processing chamber 34 is replaced with the inert gas, and the pressure of the processing chamber 34 is restored to normal pressure. In addition, during or after the normal pressure of the processing chamber 34 is restored, the rotation of the wafer boat 30 based on the rotation mechanism 43 is also stopped.

[0050] (Carrying out process)

[0051] Thereafter, the boat elevator lowers the sealing cap 46 to open the lower end of the manifold 45 , and the boat 30 holding the processed wafers 14 is unloaded from the lower end of the manifold 45 to the outside of the processing chamber 34 (boat unloading).

[0052] (Transfer process after unloading)

[0053] After the wafers 14 on the waiting wafer boat 30 are cooled to a predetermined temperature (e.g., room temperature), the substrate transfer machine 28 disposed in the transfer chamber unloads the wafers 14 from the wafer boat 30. Next, the processed wafers 14 unloaded from the wafer boat 30 are transferred to an empty box mounted on the box opener for wafer unloading. After that, the box containing the processed wafers 14 is transferred to the rotating box rack or the box mounting table by the box transfer device 20. Thus, a series of processing actions of the substrate processing process performed by the substrate processing device are completed.

[0054] Figure 3 FIG. 1 shows an example of a configuration of an exhaust system of a substrate processing apparatus used in this embodiment. Figure 3 The portion enclosed by the dashed line is referred to as an exhaust box 75 .

[0055] like Figure 3 As shown in the figure, in the exhaust pipe 48 as the main exhaust line, a pressure sensor 51 as a pressure detection unit, a pressure switch 52 as a pressure detection unit, a gate valve 55 as a first switch unit, an adjustment valve 35, a pressure switch 53 as a pressure detection unit, and a vacuum pump 36 as an exhaust device via a bellows 36a are sequentially provided from the upstream side. In the accompanying drawings, the pressure switches 52 and 53 are sometimes described as "PS" and the vacuum pump 36 is described as "PUMP". In addition, a gate valve 56 as a second opening and closing unit is provided on the secondary side (downstream side) of the vacuum pump 36. The pressure sensor 51 is a pressure detector that detects the pressure of the processing chamber 34. The pressure switch 52 is a first pressure switch that detects whether the pressure of the processing chamber 34 exceeds the atmospheric pressure. The gate valve 55 is a shut-off valve that cuts off the flow path in the exhaust pipe 48. The adjustment valve 35 is an APC (Auto Pressure Controller) valve as a pressure regulator. The pressure switch 53 is a second pressure switch that detects whether the pressure in the exhaust pipe 48 on the downstream side of the adjustment valve 35 exceeds the atmospheric pressure. The bellows 36a is a flexible pipe that can expand and contract in a bellows shape. The vacuum pump 36 reduces the pressure in the processing chamber 34. The gate valve 56 is a shutoff valve that stops exhaust.

[0056] The gate valve 55 opens and closes the valve while the adjustment valve 35 and the gate valve 56 are in an open state and the vacuum pump 36 is in operation, thereby enabling vacuum exhaust and vacuum exhaust stop of the processing chamber 34. In addition, the adjustment valve 35 opens and closes the valve while the gate valve 55 and the gate valve 56 are in an open state and the vacuum pump 36 is in operation, thereby enabling vacuum exhaust and vacuum exhaust stop of the processing chamber 34. Furthermore, the adjustment valve 35 adjusts the valve opening based on the pressure information detected by the pressure sensor 51 while the gate valve 55 and the gate valve 56 are in an open state and the vacuum pump 36 is in operation, thereby enabling pressure in the processing chamber 34 to be adjusted.

[0057] In addition, a vent pipe 61 is provided as an atmospheric pressure release line (overpressure protection line) for protecting the processing chamber 34 from overpressure in a manner branching from the exhaust pipe 48 on the upstream side of the regulating valve 35 (gate valve 55) for regulating the pressure of the processing chamber 34. The vent pipe 61 is provided with a valve 52b that receives a signal from the pressure switch 52 and moves from a closed state to an open state, and a check valve CV as a valve portion for preventing backflow, and the vent pipe 61 is connected to an external exhaust ( Figure 3 It is recorded as "Exhaust" in the text.

[0058] In addition, a branch pipe 57 as a slow exhaust line for slowly exhausting the processing chamber 34 is provided so as to bypass the gate valve 55 and the adjustment valve 35 , and an air valve 57 a as a fourth opening and closing valve is provided in the branch pipe 57 .

[0059] Next, a branch pipe 62 is provided as a release line (over-pressurization protection line) in a manner of branching from the exhaust pipe 48 on the downstream side of the regulating valve 35 for regulating the pressure of the processing chamber 34. The branch pipe 62 is provided with a valve 53b as a third opening and closing portion that receives a signal from the pressure switch 53 and moves from a closed state to an open state, and a check valve CV as a valve portion for preventing backflow, and the branch pipe 62 is connected to the vent pipe 61.

[0060] In addition, the branch pipe 62 is provided to branch from the exhaust pipe 48 between the gate valve 55 and the gate valve 56 (specifically, the exhaust pipe 48 on the downstream side of the regulating valve 35 for regulating the pressure of the processing chamber 34 and the upstream side of the vacuum pump 36), and the purge pipe 58 as a purge gas line is provided. The purge pipe 58 is connected to a nitrogen (N2) gas source ( Figure 3 Next, the purge pipe 58 is provided with an MFC (Mass Flow Controller) 1 as a flow controller from the upstream side, and is provided so as to be able to introduce the inert gas whose flow rate is controlled via the valve 2 in a manner that is independent of the states of the valve 53b, the gate valve 55, and the gate valve 56. In addition, a heating unit for heating the inert gas (not shown) is provided in the purge pipe 58.

[0061] Thus, in this embodiment, there is an exhaust pipe structure including an exhaust pipe 48 for exhausting the atmosphere of the processing chamber 34, a pressure switch 53 provided in the exhaust pipe 48 for detecting the pressure in the exhaust pipe 48, and a branch pipe 62. The branch pipe 62 includes a valve 53b that is activated by a signal from the pressure switch 53, and a check valve CV that prevents backflow to the exhaust pipe 48. With this exhaust pipe structure, it is possible to protect the exhaust pipe (pipe of the exhaust system) from over-pressurization.

[0062] In this embodiment, when the pressure switch 53 detects a preset pressure (e.g., atmospheric pressure), the valve 53b is changed from a closed state to an open state by receiving a signal from the pressure switch 53. Furthermore, the branch pipe 62 is connected to the vent pipe 61. With this structure, the atmosphere of the exhaust pipe 48 can be exhausted to the vent pipe 61 via the valve 53b, thereby protecting the exhaust pipe (the pipe of the exhaust system) from over-pressurization.

[0063] In this embodiment, the exhaust pipe structure including the branch pipe 62 and the pressure switch 53 is provided in the exhaust pipe 48 between the gate valve 55 (adjusting valve 35) and the gate valve 56 (vacuum pump 36). In this case, the valve 53b is changed from a closed state to an open state by receiving a signal from the pressure switch 53, so that the atmosphere of the exhaust pipe 48 can flow into the branch pipe 62 before the pressure in the exhaust pipe 48 becomes higher than the atmospheric pressure (becomes over-pressurized). Thus, the atmosphere of the exhaust pipe 48 can be released to the branch pipe 62 without deforming the bellows 36a, and the exhaust piping (piping of the exhaust system) can be protected from over-pressurization. In addition, since there is no need to replace the deformed parts of the bellows 36a, it is possible to suppress the reduction in the operating rate of the device due to maintenance such as replacement of parts.

[0064] In the past, even if the bellows 36a was used to absorb the over-pressurization, there was a concern that the operating rate of the device would be reduced because maintenance (for example, replacement of the bellows 36a) would be required. However, in the present embodiment, the gas (or gaseous state, such as air) in the exhaust pipe 48 between the gate valve 55 (adjusting valve 35) and the gate valve 56 (vacuum pump 36) is dissipated to the branch pipe 62 through the branch pipe 62, so that the over-pressurization in the exhaust pipe 48 can be protected. Thus, by exhausting the gas from the branch pipe 62 before the exhaust pipe 48 becomes over-pressurized, the bellows 36a will not be deformed. Therefore, if the reason is minor (for example, the gate valve 56 is closed), when the error caused by the over-pressurization of the exhaust pipe 48 is resolved, the process can be continued without maintenance. Therefore, the reduction in the operating rate of the device can be suppressed.

[0065] In addition, in the present embodiment, the exhaust pipe 48 between the gate valve 55 (adjusting valve 35) and the gate valve 56 (vacuum pump 36) can be exhausted from the branch pipe 62 before the over-pressurization occurs. Therefore, the influence of over-pressurization on the adjusting valve 35 is reduced. For example, the concern of damage to the adjusting valve 35 can be suppressed. In addition, the effect of reducing the influence of over-pressurization is expected to be the same for the components constituting the vacuum pump 36, not limited to the bellows 36a.

[0066] In addition, in the present embodiment, a purge pipe 58 is further provided which is connected to the exhaust pipe 48 and can supply a predetermined gas (e.g., an inert gas) to the exhaust pipe 48. Although the branch pipe 62 and the purge pipe 58 are both connected to the exhaust pipe 48, since they are separated, a purge effect of the purge gas supplied from the purge pipe 58 to the exhaust pipe 48 can be expected. In addition, it is preferred that the purge pipe 58 is provided on the downstream side of the branch pipe 62 so that a greater purge effect can be expected.

[0067] Next, the corresponding Figure 4 This is an example of a diagnostic sequence between the control unit 32 and each MFC 1. When there are multiple MFCs, the control unit 32 performs this adjustment sequence on each designated MFC.

[0068] When the adjustment starts, the vacuum pump 36 is turned on, the gate valve 55 is closed, and vacuum suction is performed in the exhaust pipe 48. All of this is done in accordance with the digital I / O instructions from the control unit 32.

[0069] (S21) In this step, the control unit 32 simultaneously issues an instruction to switch the switch of the MFC1 to be adjusted to N2 gas, and switches the switch of the MFC1 to N2 gas. This is to initialize the N2 gas as a reference for the initial diagnostic inspection. Here, the switch refers to the registration number of one gas of the MFC corresponding to multiple gases. By switching the switch, the MFC can control the gas set to the specified number from among multiple pre-registered gases. In addition, this step can also be omitted when the MFC is originally dedicated to N2 gas, or when N2 gas is specified.

[0070] (S22) After (S21) is completed, the flow rate of MFC1 is continued to be adjusted as the first flow rate in a manner to become a predetermined predetermined flow rate. After a predetermined time, the flow rate of the MFC of the diagnostic object is adjusted in a manner to become a second flow rate (flow rate 0). Specifically, according to the instruction from the control unit 32, the N2 gas source 33 is set to be turned on and the valve 2 is set to be opened. For example, the flow rate is set to 20% in MFC1. MFC1 uses the coefficient of the inert gas and adjusts the opening of the valve based on the value of the pressure sensor for flow conversion in MFC1 to perform flow control, thereby controlling the flow rate to 20%. In addition, MFC1 can also be controlled to a predetermined flow rate in this way, waiting for a predetermined time such as 10 seconds at a predetermined flow rate, and setting the flow rate to 0 immediately after converging to the predetermined flow rate. For example, the flow rate can be set to 20%, 40%, 60%, 80%, and 100% multiple times.

[0071] (S23) The control unit 32 waits for a predetermined time and confirms the completion of the initial diagnostic inspection as the component inspection (the flow rate of the MFC is 0). In addition, since the time when the flow rate becomes 0 can be predicted in advance, the component inspection may be completed after the flow rate of the MFC1 has passed a predetermined time from the second flow rate (flow rate 0). In this way, the control unit 32 closes the valve in the target MFC1 (or adjusts it to a set flow rate of 0%) and confirms the completion of the component inspection when the flow rate converges to 0 (convergence time).

[0072] (S24) The control unit 32 simultaneously obtains the component inspection result information (e.g., time) from the MFC1. The MFC1 uses the predetermined flow rate (flow rate 0) as a trigger to obtain the inspection result information (diagnosis result information) and compares it with the initialization information. In addition, the MFC1 may also use the predetermined time as a trigger to output the inspection result information. Specifically, the control unit 32 obtains the pressure indicating the pressure change, the time to reach the flow rate 0 or the time of convergence, the temperature, etc. as the inspection result information after the flow rate converges to 0 or a predetermined time such as 3 seconds has passed.

[0073] The control unit 32 generates a warning when the obtained component inspection result information, such as when the arrival time is not within the preset time range, performs a predetermined error processing and ends the diagnostic process. For example, when the component inspection error occurs, the adjustment (initial diagnostic check) from S21 to S24 is performed in the same manner as after the new MFC is replaced.

[0074] also, Figure 4 In the embodiment, the switching of the switch is performed by the control unit 32, but it may be switched manually. According to the present embodiment, when the device is erected, the time taken to grasp the initial defect of the adjustment target component (MFC1) can be shortened.

[0075] Here, in order to perform the adjustment operation (S21 to S24) of the MFC1, the valve interlock is released in advance, so the purge pipe 58 is provided so that the inert gas after the flow rate control can be introduced regardless of the state of the valve 53b, the gate valve 55, and the gate valve 56. Therefore, the inert gas whose flow rate is controlled by the MFC1 provided in the purge pipe 58 can be introduced into the flow path in the exhaust pipe 48 through the valve 2 when the valve 53b, the gate valve 55, and the gate valve 56 are in the closed state.

[0076] The gate valve 56 is disposed, for example, at a position away from the vacuum pump 36. Therefore, even if the gate valve 56 is closed, the flow rate of the inert gas used in the adjustment operation (S21 to S24) of the MFC 1 is not large, and thus the adjustment operation (S21 to S24) of the MFC 1 is not affected.

[0077] When the adjustment operation takes time, for example, when the flow rate is not converged to a predetermined flow rate or to 0 flow rate within a preset time, a large amount of inert gas is circulated without being noticed. At this time, the pressure in the exhaust pipe 48 downstream of the gate valve 55 and upstream of the gate valve 56 may become over-pressurized.

[0078] Thus, even if the exhaust pipe 48 on the downstream side of the gate valve 55 becomes over-pressurized by the adjustment operation (S21 to S24) of the MFC1, according to the present embodiment, the pressure switch 53 detects that the pressure in the exhaust pipe 48 is above the atmospheric pressure, and the valve 53b is changed from the closed state to the open state. Thus, since the valve 53b is opened, the atmosphere in the exhaust pipe 48 can be dispersed from the branch pipe 62 to the vent pipe 61. Therefore, since the influence of the over-pressurization of the exhaust pipe 48 on the bellows 36a can be suppressed, the time waste of the setting operation due to the maintenance for replacement can be reduced.

[0079] Here, the setting operation in this embodiment includes, in addition to the initial diagnosis and inspection of the components constituting the exhaust line, the setting operation of the frame of the substrate processing device, the wiring operation of the electrical equipment, and the connection operation of the gas supply line and the exhaust line. In addition to the operation inspection (component inspection) operation such as the initial diagnosis and inspection of the components constituting the gas supply line, the setting operation also includes the transportation inspection operation of performing a process for transporting the wafer 14 stored in the substrate storage container (box) to the processing chamber 34, and the leakage inspection operation of performing a leakage inspection process for decompressing the processing chamber 34 to a predetermined pressure. In addition, the above-mentioned transportation inspection operation may also include the operation of loading the wafer 14 in the wafer boat 30. In addition, it includes the empty baking operation of performing a process for annealing the reaction tube 41 constituting the processing chamber 34, and the empty baking operation is performed at a temperature higher than the temperature of the processing in the processing chamber 34 without loading not only the wafer 14 but also the wafer boat 30 in the processing chamber 34. In addition, in order to shorten the setting operation time, these transportation inspection operations and the empty baking operation can be performed in parallel.

[0080] Thus, according to the above embodiment, Figure 5 As shown, since the piping on the exhaust side (exhaust pipe 48) becomes over-pressurized and the bellows 36a expands, force acts in the direction of the arrow, and an accident of crushing the vacuum pump 36 can be prevented in advance.

[0081] (Other embodiments)

[0082] As mentioned above, although embodiment of this disclosure was specifically described, this disclosure is not limited to each said embodiment, Various changes can be made within the range which does not deviate from the summary.

[0083] In the above embodiment, an example of using N2 gas as the inert gas is described, but the present invention is not limited thereto, and a rare gas such as Ar gas, He gas, Ne gas, or Xe gas may also be used. However, in this case, a rare gas source must be prepared.

[0084] In addition, for example, the processing performed by the substrate processing apparatus may be film forming processing, processing for forming an oxide film, a nitride film, or processing for forming a metal-containing film. Furthermore, regardless of the specific content of the substrate processing, not only the above-mentioned processing such as film forming processing but also other substrate processing such as annealing processing, oxidation processing, nitridation processing, diffusion processing, photoetching processing, etc. may be applied.

[0085] Furthermore, the present disclosure can also be applied to other substrate processing apparatuses, such as annealing apparatuses, oxidation processing apparatuses, nitridation processing apparatuses, exposure apparatuses, coating apparatuses, drying apparatuses, heating apparatuses, processing apparatuses using plasma, etc. In addition, the present disclosure can also be mixed with these apparatuses.

[0086] In addition, in this embodiment, a semiconductor manufacturing process is described, but the present disclosure is not limited thereto. For example, the present disclosure can also be applied to substrate processing such as a manufacturing process of a liquid crystal device, a manufacturing process of a solar cell, a manufacturing process of a light-emitting device, a processing process of a glass substrate, a processing process of a ceramic substrate, and a processing process of a conductive substrate.

[0087] In addition, a part of the structure of a certain embodiment may be replaced by the structure of other embodiments, and a part of the structure of a certain embodiment may be added to the structure of other embodiments. In addition, a part of the structure of each embodiment may be added, deleted, or replaced by other structures.

[0088] Explanation of symbols

[0089] 48 Exhaust pipe 53 Pressure switch (pressure detection unit) 53b Valve (opening and closing unit)

[0090] 62 branch pipe

[0091] CV check valve (valve section).

Claims

1. An exhaust structure, characterized in that: have: an exhaust pipe for exhausting the atmosphere of the processing chamber; a pressure detection unit, which is disposed in the exhaust pipe and detects the pressure in the exhaust pipe; and A branch pipe includes an opening and closing portion that is activated by receiving a signal from the pressure detection portion and a valve portion that prevents a backflow to the exhaust pipe, and the branch pipe branches from the exhaust pipe.

2. The exhaust structure according to claim 1, characterized in that: When the pressure detection unit detects a preset pressure, the opening and closing unit changes from a closed state to an open state.

3. The exhaust structure according to claim 1, characterized in that: The pressure detection unit detects atmospheric pressure.

4. The exhaust structure according to claim 1, characterized in that: A purge pipe is provided which is connected to the exhaust pipe and can supply gas to the exhaust pipe. The branch pipe is connected to a position away from a portion of the exhaust pipe connected to the purge pipe.

5. The exhaust structure according to claim 4, characterized in that: The purge pipe is provided on the downstream side of the branch pipe.

6. The exhaust structure according to claim 4, characterized in that: The exhaust structure further includes a first opening and closing portion provided on the exhaust pipe upstream of a portion of the exhaust pipe connected to the purge pipe and capable of shutting off communication with the processing chamber.

7. The exhaust structure according to claim 4, characterized in that: The exhaust structure further includes a second opening and closing portion provided in the exhaust pipe on a downstream side of a portion of the exhaust pipe connected to the purge pipe, and capable of stopping exhaust in the exhaust pipe.

8. The exhaust structure according to claim 6, characterized in that: The exhaust structure further includes: a vent pipe provided to branch from the exhaust pipe on the upstream side of the first opening and closing portion; The branch pipe is connected to the ventilation pipe.

9. The exhaust structure according to claim 1, characterized in that: The exhaust pipe is also provided with a regulating valve for adjusting the pressure of the processing chamber. The pressure detection unit is connected to the exhaust pipe on the downstream side of the regulating valve.

10. The exhaust structure according to claim 1, characterized in that: An exhaust device capable of decompressing the processing chamber is further provided on the downstream side of the portion of the exhaust pipe connected to the branch pipe.

11. The exhaust structure according to claim 7, characterized in that: The exhaust structure is also provided with an exhaust device capable of decompressing the processing chamber. The second opening and closing portion is provided on the downstream side of the exhaust device.

12. The exhaust structure according to claim 4, characterized in that: The purge pipe includes a heating portion capable of heating the gas.

13. The exhaust structure according to claim 6, characterized in that: The exhaust structure further includes a flow controller for controlling the flow rate of the gas. When the first opening and closing portion and the opening and closing portion are both in a closed state, the purge pipe supplies the gas whose flow rate is controlled by the flow controller to the exhaust pipe.

14. The exhaust structure according to claim 7, characterized in that: The exhaust structure further includes a flow controller for controlling the flow rate of the gas. When the second opening and closing portion and the opening and closing portion are both in a closed state, the purge pipe supplies the gas whose flow rate is controlled by the flow controller to the exhaust pipe.

15. The exhaust structure according to claim 13 or 14, characterized in that: The flow rate of the gas flowing through the flow controller converges from a preset predetermined flow rate to 0 within a predetermined time.

16. An exhaust system, characterized in that: have: The exhaust structure according to claim 1; as well as The control unit is capable of controlling the pressure detection unit and the opening and closing unit so as to open the opening and closing unit when the pressure in the exhaust pipe exceeds the atmospheric pressure.

17. A treatment device having an exhaust structure, characterized in that: The exhaust structure comprises: an exhaust pipe for exhausting the atmosphere of the processing chamber; a pressure detection unit, which is disposed in the exhaust pipe and detects the pressure in the exhaust pipe; and A branch pipe includes an opening and closing portion that is activated by receiving a signal from the pressure detection portion and a valve portion that prevents a backflow to the exhaust pipe, and the branch pipe branches from the exhaust pipe.

18. A method for manufacturing a semiconductor device, characterized in that: The manufacturing method includes a substrate processing step of exhausting a processing chamber and processing a substrate using an exhaust structure having the following components: an exhaust pipe for exhausting the atmosphere of the processing chamber; a pressure detection unit, which is disposed in the exhaust pipe and detects the pressure in the exhaust pipe; and A branch pipe includes an opening and closing portion that is activated by receiving a signal from the pressure detection portion and a valve portion that prevents a backflow to the exhaust pipe, and the branch pipe branches from the exhaust pipe.

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