Calibration method of substrate for temperature measurement, substrate temperature measurement system and substrate for temperature measurement

Abstract

According to the invention, the temperature measurement efficiency of the substrate for temperature measurement is improved. The present invention provides a method for correcting a substrate for temperature measurement, the substrate for temperature measurement comprising a plurality of temperature measurement resistors and electrodes respectively disposed corresponding to the plurality of temperature measurement resistors, the method for correcting a substrate for temperature measurement comprising: a step of bringing a needle-shaped body into contact with an electrode corresponding to at least one of the temperature measurement resistors; a step in which the substrate for temperature measurement is immersed in an insulating refrigerant; a step for measuring the resistance value of the temperature measurement resistor via the electrode by means of the needle-shaped body; a step for measuring the temperature of the insulating refrigerant; and acquiring a correction value for converting the measured resistance value into the measured temperature of the insulating refrigerant.

Description

Technical Field

[0001] The invention relates to a correction method for a temperature measuring substrate, a substrate temperature measuring system and a temperature measuring substrate. Background Art

[0002] As a substrate inspection device for inspecting a plurality of semiconductor devices formed on a product wafer, a probe is known. The probe includes a probe card having contact probes as a plurality of needle-shaped contact terminals, and each contact probe is brought into contact with an electrode pad or a solder bump of a semiconductor device by bringing a product wafer placed on a mounting table close to the probe card. The probe also checks the conduction state of the circuit by energizing the circuit of the semiconductor device from each contact probe.

[0003] In recent years, the inspection conditions for semiconductor devices have become more complicated, and in particular, it is required to inspect semiconductor devices in high temperature environments and low temperature environments. Such high temperature environments and low temperature environments are achieved in the detector by adjusting the temperature of the Peltier element and heater of the mounting table on which the product wafer is mounted. By placing a temperature measurement wafer (for example, see non-patent document 1) on the mounting table instead of the product wafer, the temperature of the mounting table is measured to confirm whether the required high temperature environment and low temperature environment can be achieved, that is, to confirm the temperature adjustment capability of the mounting table.

[0004] Prior art literature

[0005] Patent Literature

[0006] Non-Patent Literature 1: KLA Corporation, “Process ProbeTM 1530 / 1535”, [online], [retrieved on August 12, 2022], Internet <URL: https: / / www.kla.com / products / chip-manufacturing / in-situ-process-manage ment> Summary of the invention

[0007] Technical problem to be solved by the invention

[0008] The technology involved in the present invention improves the temperature measurement efficiency of a temperature measurement substrate.

[0009] Technical solutions for solving technical problems

[0010] One aspect of the technology of the present invention is a method for calibrating a temperature measuring substrate, wherein the temperature measuring substrate includes a plurality of temperature measuring resistors, and electrodes are respectively arranged corresponding to the plurality of temperature measuring resistors. The method for calibrating the temperature measuring substrate includes: a step of making a needle-shaped body contact an electrode corresponding to at least one of the temperature measuring resistors; a step of immersing the temperature measuring substrate in an insulating refrigerant; a step of measuring the resistance value of the temperature measuring resistor via the electrode using the needle-shaped body; a step of measuring the temperature of the insulating refrigerant; and a step of obtaining a correction value for converting the measured resistance value into the measured temperature of the insulating refrigerant.

[0011] Effects of the Invention

[0012] According to the technology related to the present invention, the temperature measurement efficiency using the temperature measurement substrate can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a plan view schematically showing the structure of a temperature measurement wafer as one embodiment of the technology of the present invention.

[0014] Figure 2 This is a front view schematically showing the structure of an example of a substrate inspection apparatus for inspecting semiconductor devices formed on a product wafer.

[0015] Figure 3 This is a front view schematically showing the structure of a modified example of a substrate inspection apparatus for inspecting semiconductor devices formed on a product wafer.

[0016] Figure 4 This is a front view schematically showing the structure of an example of a substrate inspection device that acquires correction values ​​of each pattern of a temperature measurement wafer.

[0017] Figure 5A It is used for illustration purposes Figure 4 A step diagram of an example of a correction value calibration operation of a substrate inspection device.

[0018] Figure 5B It is used for illustration purposes Figure 4 A step diagram of an example of a correction value calibration operation of a substrate inspection device.

[0019] Figure 5C It is used for illustration purposes Figure 4 A step diagram of an example of a correction value calibration operation of a substrate inspection device.

[0020] Figure 5D It is used for illustration purposes Figure 4 A step diagram of an example of a correction value calibration operation of a substrate inspection device.

[0021] Fig. 6A It is used for illustration purposes Figure 4 A step diagram of a modified example of a correction value calibration operation of a substrate inspection device.

[0022] Figure 6B It is used for illustration purposes Figure 4 A step diagram of a modified example of a correction value calibration operation of a substrate inspection device.

[0023] Figure 6C It is used for illustration purposes Figure 4 A step diagram of a modified example of a correction value calibration operation of a substrate inspection device.

[0024] Fig. 7A It is a front view schematically showing the structure of a modified example of a substrate inspection apparatus for acquiring correction values ​​of each pattern of a temperature measurement wafer.

[0025] Figure 7B It is a front view schematically showing the structure of a modified example of a substrate inspection apparatus for acquiring correction values ​​of each pattern of a temperature measurement wafer.

[0026] Figure 8 It is used for illustration purposes Figure 2 FIG. 1 is a diagram of a correction value calibration operation of a substrate inspection device.

[0027] Fig. 9 It is a plan view schematically showing the structure of a modified example of the temperature measurement wafer as one embodiment of the technology of the present invention.

[0028] Fig.10 It is used to illustrate Fig. 9 A diagram showing a modified example of the arrangement of the heater in the temperature measurement chip. DETAILED DESCRIPTION

[0029] In the temperature measuring chip of the technology of the above-mentioned non-patent document 1, a plurality of temperature measuring sensors are dispersedly arranged on the temperature measuring chip, and wiring is led out from each temperature measuring sensor in order to extract the output of each temperature measuring sensor. Therefore, since a plurality of wirings are installed on the temperature measuring chip, it is not easy to operate (take out and handle), and the operation of the temperature measuring chip needs to be performed manually by an operator.

[0030] In addition, when the heat capacity of each wiring becomes large, the heat energy from the mounting table is transferred to the wiring, and the actual inspection environment cannot be reproduced. Therefore, each wiring is formed very thin to prevent a large amount of heat energy from being transferred to the wiring. On the other hand, since each wiring is easy to break, it is also necessary to check whether each wiring is broken and increase the frequency of the temperature measurement chip calibration operation. The temperature measurement chip calibration operation is performed by a calibration device that can control the temperature of the temperature measurement chip.

[0031] However, as described above, the temperature measuring wafer needs to be handled manually by the operator, so the calibration operation of the temperature measuring wafer is also very troublesome. That is, when the temperature measuring wafer of the technology of Non-Patent Document 1 is used, it is necessary to frequently perform very troublesome calibration operations, and the temperature adjustment capability of the mounting table using the temperature measuring wafer cannot be confirmed every time. Therefore, the temperature measurement efficiency of the temperature measuring wafer is reduced.

[0032] In order to solve the above problems, the technology of the present invention uses a temperature measuring substrate when performing a calibration operation of a temperature measuring substrate, so that a needle-shaped body is in contact with an electrode corresponding to a temperature measuring resistor, wherein the temperature measuring substrate includes a plurality of temperature measuring resistors, and electrodes are arranged corresponding to each of the plurality of temperature measuring resistors. Furthermore, the temperature measuring substrate is immersed in an insulating refrigerant, and electricity is supplied from the needle-shaped body to the temperature measuring resistor via the electrode to measure the resistance value of the temperature measuring resistor, and the temperature of the insulating refrigerant is measured. Thereafter, a correction value for converting the measured resistance value into the measured temperature of the insulating refrigerant is obtained.

[0033] Hereinafter, one embodiment of the technology of the present invention will be described with reference to the drawings. Figure 1 It is a plan view schematically showing the structure of a temperature measurement wafer TW (temperature measurement substrate) which is one embodiment of the technology of the present invention.

[0034] exist Figure 1 In the embodiment, the temperature measuring wafer TW is composed of a disk-shaped substrate having a substantially same shape as a product wafer (product substrate) as a semiconductor wafer, and a plurality of patterns 10 composed of temperature measuring resistors are formed corresponding to the positions of the product wafer where each semiconductor device is formed. The temperature measuring resistors of the patterns 10 are composed of a metal or a metal oxide whose resistance value changes according to temperature, and platinum is used as an example in the present embodiment. Each pattern 10 can be provided on the surface of the temperature measuring wafer TW, or can be buried in the temperature measuring wafer TW.

[0035] In addition, on the temperature measurement wafer TW, electrode pads 11a and 11b are arranged at both ends of each pattern 10. The electrode pads 11a and 11b are provided on the surface of the temperature measurement wafer TW, and come into contact with contact probes 22 of a probe card 20 described later.

[0036] Figure 2 FIG. 1 is a front view schematically showing the structure of a substrate inspection device 12 for inspecting semiconductor devices formed on a product wafer W. Figure 2 In FIG. 1 , a portion is shown as a cross-sectional view in order to show the internal structure of the substrate inspection device 12 .

[0037] exist Figure 2In the embodiment, the substrate inspection device 12 includes a loading unit 13, an inspection unit 14, and a device controller 15. Under the control of the device controller 15, the substrate inspection device 12 transports a product wafer W from the loading unit 13 to the inspection unit 14, and inspects a plurality of semiconductor devices, i.e., DUTs (devices under test) formed on the product wafer W. Specifically, the substrate inspection device 12 inspects the conduction state of each DUT circuit by energizing the circuit of the DUT.

[0038] The loading section 13 includes a cassette storage section 16 and a wafer conveying mechanism (not shown). The cassette storage section 16 contains cassettes C, which contain product wafers W. The cassettes C are, for example, FOUPs (Front Opening Unify Pods). The wafer conveying mechanism conveys product wafers W between the cassettes C stored in the cassette storage section 16 and a later-described mounting table 17 provided in the inspection section 14.

[0039] The inspection section 14 is disposed adjacent to the loading section 13. The inspection section 14 includes a mounting table 17, an elevating mechanism 18, an XY drive mechanism 19, a probe card 20, and an alignment mechanism 21.

[0040] The mounting table 17 (mounting member) has a substrate adsorption mechanism such as a vacuum chuck and an electrostatic chuck, and also has a temperature adjustment mechanism such as a Peltier element and a heater (not shown). In addition, the mounting table 17 mounts a product wafer W on the upper surface, and uses the substrate adsorption mechanism to adsorb the product wafer W, and uses the temperature adjustment mechanism to adjust the temperature of the mounting table 17, thereby adjusting the temperature of the product wafer W through heat transfer.

[0041] The lifting mechanism 18 is provided at the lower part of the mounting table 17 to lift and lower the mounting table 17 (moving in the Z direction in the figure). The XY drive mechanism 19 is provided at the lower part of the lifting mechanism 18 and fixed to the bottom of the inspection unit 14 to move the mounting table 17 and the lifting mechanism 18 in two axial directions (the X direction and the Y direction in the figure).

[0042] The probe card 20 is disposed above the mounting table 17. A plurality of needle-shaped contact probes 22 are formed on the mounting table 17 side of the probe card 20. The probe card 20 is detachably mounted on a top plate 23. A tester (not shown) is connected to the probe card 20 via a test head 24.

[0043] The alignment mechanism 21 includes a camera 25, a guide rail 26, a main bridge 27, and a light source 28. The camera 25 is, for example, a CCD camera or a CMOS camera, and is mounted at the center of the main bridge 27 facing downward to capture images of the mounting table 17 and the product wafer W.

[0044] The guide rails 26 support the main bridge 27 so that the main bridge 27 can move in the horizontal direction (the Y direction in the figure). The main bridge 27 is supported by a pair of left and right guide rails 26 and moves in the horizontal direction (the Y direction in the figure) along the guide rails 26. The camera 25 moves between the standby position and the center of the probe card 20 (hereinafter referred to as the "probe center") by the movement of the main bridge 27.

[0045] When performing the alignment described later, the camera 25 is located at the center of the probe, and the electrode pads of each DUT of the product wafer W placed on the stage 17 moving in the XY direction are photographed from above. The position of the electrode pads of each DUT can be grasped based on the image obtained by the photographing. In addition, the image obtained by the photographing is displayed on the display device 29. In addition, the light source 28 is provided at the lower part of the main bridge 27, and irradiates light to the stage 17, assisting the camera 25 in photographing each electrode pad.

[0046] When inspecting the DUT of the product wafer W in the substrate inspection device 12, in the inspection section 14, first, the mounting table 17 is made to absorb the product wafer W mounted on the mounting table 17, and the temperature of the mounting table 17 on which the product wafer W is mounted is adjusted to a required temperature. Next, based on the known positions of the electrode pads of each DUT, the alignment mechanism 21 cooperates with the XY drive mechanism 19 to align each contact probe 22 of the probe card 20 with the electrode pads of each DUT of the product wafer W.

[0047] Next, the lifting mechanism 18 raises the stage 17 so that each contact probe 22 of the probe card 20 contacts the electrode pad of each corresponding DUT. After that, the device controller 15 checks the conduction state of the circuit by energizing the circuit of each DUT from the tester via the test head 24 and each contact probe 22 of the probe card 20.

[0048] The device controller 15 is provided below the mounting table 17 and controls the overall operation of the substrate inspection device 12. The CPU provided in the device controller 15 performs the required inspection according to the product parameters stored in the memory such as ROM and RAM. In addition, the product parameters may also be stored in a hard disk and a semiconductor memory other than ROM and RAM. In addition, the product parameters may also be inserted into a predetermined position and read out in a state recorded in a recording medium such as a CD-ROM and DVD that can be read by a computer.

[0049] In addition, in the substrate inspection device 12, in addition to the inspection of the DUT of the product wafer W described above, the temperature adjustment capability of the temperature adjustment mechanism of the mounting table 17 is checked and adjusted (hereinafter collectively referred to as "mounting table calibration operation"). In the mounting table calibration operation, the temperature measuring wafer TW is used to check whether the temperature of each pattern 10 of the temperature measuring wafer TW can be adjusted to a desired temperature, for example, an inspection temperature, by the temperature adjustment mechanism of the mounting table 17. That is, the temperature of each pattern 10 of the temperature measuring wafer TW is measured.

[0050] When the stage calibration operation is performed, a temperature measurement probe card 32 described later is mounted on the top plate 23 instead of the probe card 20, and a wafer W is used instead of the product wafer. Figure 1 The temperature measurement probe card 32 has basically the same structure as the probe card 20, and includes a plurality of temperature measurement contact probes 33 that come into contact with the electrode pads 11a and 11b of the respective patterns 10 of the temperature measurement wafer TW.

[0051] In the substrate inspection device 12, when the stage calibration operation is performed, in the inspection section 14, first, the stage 17 is made to absorb the temperature measuring wafer TW mounted on the stage 17, and the temperature of the stage 17 on which the temperature measuring wafer TW is mounted is adjusted to the inspection temperature. Next, the positions of the electrode pads 11a and 11b of each pattern 10 are grasped by photographing with the camera 25. Then, based on the grasped positions of the electrode pads 11a and 11b, the alignment mechanism 21 cooperates with the XY drive mechanism 19 to perform alignment so that each temperature measuring contact probe 33 of the temperature measuring probe card 32 is aligned with the electrode pads 11a and 11b of each pattern 10.

[0052] Next, the lifting mechanism 18 raises the stage 17 so that each temperature measuring contact probe 33 of the temperature measuring probe card 32 contacts the electrode pads 11a and 11b of each corresponding pattern 10. After that, the device controller 15 measures the resistance value of each pattern 10 by energizing each pattern 10 from the tester via the test head 24 and each temperature measuring contact probe 33 of the temperature measuring probe card 32. Based on the correction value of each pattern 10 described later, the measured resistance value is converted into temperature by the tester and the device controller 15. In this way, it is possible to confirm whether the temperature adjustment mechanism of the stage 17 can adjust the temperature of each pattern 10 of the temperature measuring wafer TW to the inspection temperature. In the case where the temperature of each pattern 10 cannot be adjusted to the inspection temperature, the difference between the converted temperature and the temperature (inspection temperature) measured by the temperature sensor built into the stage 17 is recorded as a correction value, and the recorded correction value is reflected in the temperature measurement of the temperature measuring wafer TW later to adjust the temperature of the stage 17.

[0053] In addition, when the probe card 20 is replaced with a temperature measuring probe card 32, the tester connected to the test head 24 also needs to be replaced with a tester for the temperature measuring probe card. However, it is considered that the temperature measuring probe card 32 is equipped with a wireless communication unit that performs short-range wireless communication with the battery, such as Bluetooth (registered trademark). In this case, the measurement results of the resistance value of each pattern 10 are sent to other testers other than the tester connected to the test head 24, and the temperature conversion is performed by the other testers. As a result, when performing the stage calibration operation, it is not necessary to replace the tester connected to the test head 24, and the efficiency of the stage calibration operation of the substrate inspection device 12 can be improved.

[0054] However, in the above-mentioned stage calibration operation, the probe card 20 needs to be replaced with the temperature measuring probe card 32. However, when the replacement operation is performed manually by the operator, there is a problem that the efficiency of the stage calibration operation is reduced. Therefore, in a modified example of the substrate inspection device 12, the temperature measuring probe card 32 is not mounted on the top plate 23 but on other components, and the stage calibration operation is performed without replacing the probe card 20 with the temperature measuring probe card 32.

[0055] Figure 3 is roughly expressed as Figure 2 A front view of the structure of a substrate inspection device 30 which is a modified example of the substrate inspection device 12. Figure 3 In order to show the internal structure of the substrate inspection device 30, a part is also shown as a cross-sectional view. In addition, the structure of the substrate inspection device 30 is basically the same as that of the substrate inspection device 12, so only the structure and operation different from the substrate inspection device 12 will be described below.

[0056] exist Figure 3 In the substrate inspection device 30 , a card base 31 is installed at the center of the main bridge 27 instead of the camera 25 , and a temperature measurement probe card 32 is installed on the lower surface of the card base 31 so as to face the mounting table 17 .

[0057] When the stage calibration operation is performed using the temperature measurement probe card 32 mounted on the cassette 31, first, the temperature of the stage 17 on which the temperature measurement wafer TW is adsorbed is adjusted to the inspection temperature. Then, a camera (not shown) arranged on the cassette 31 photographs the electrode pads 11a and 11b of each pattern 10 of the temperature measurement wafer TW from above. Based on the photographed image, the positions of the electrode pads 11a and 11b of each pattern 10 can be grasped.

[0058] Next, based on the known positions of the electrode pads 11a and 11b of each pattern 10, the alignment mechanism 21 cooperates with the XY drive mechanism 19 to make each temperature measurement contact probe 33 face the electrode pads 11a and 11b of each pattern 10 of the temperature measurement wafer TW. After that, the lifting mechanism 18 raises the stage 17 to make each temperature measurement contact probe 33 of the temperature measurement probe card 32 contact the corresponding electrode pads 11a and 11b of each pattern 10 to measure the resistance value of each pattern 10.

[0059] in addition, Figure 3 The substrate inspection device 30 may also include a transport robot 34 for the temperature measurement probe card 32. The transport robot 34 has a movable body 35, a multi-jointed arm 36, and a holder 37 mounted on the front end of the arm 36. The temperature measurement probe card 32 is mounted on the lower surface of the holder 37.

[0060] When the stage calibration operation is performed by the transport robot 34, first, the temperature of the stage 17 on which the temperature measurement wafer TW is adsorbed is adjusted to the inspection temperature. Then, the transport robot 34 photographs the electrode pads 11a and 11b of each pattern 10 of the temperature measurement wafer TW from above using a camera (not shown) disposed on the chuck 37. The transport robot 34 grasps the positions of the electrode pads 11a and 11b of each pattern 10 based on the photographed image.

[0061] Next, the transport robot 34 moves the arm 36 based on the known positions of the electrode pads 11a and 11b of each pattern 10, so that each temperature measurement contact probe 33 faces the electrode pads 11a and 11b of each pattern 10 of the temperature measurement wafer TW. Furthermore, the arm 36 moves the holder 37 downward, and the lifting mechanism 18 raises the stage 17, so that each temperature measurement contact probe 33 of the temperature measurement probe card 32 contacts the corresponding electrode pads 11a and 11b of each pattern 10. Then, the resistance value of each pattern 10 is measured.

[0062] Furthermore, when the stage calibration operation is performed by the transfer robot 34, the top plate 23 is raised (popped up) upward to expose the stage 17 of the inspection unit 14. Thus, the temperature measurement probe card 32 mounted on the holder 37 of the transfer robot 34 can reach the temperature measurement wafer TW adsorbed by the stage 17 without interfering with the probe card 20 mounted on the top plate 23.

[0063] exist Figure 3 In the substrate inspection device 30, when the stage calibration operation is performed, it is not necessary to replace the probe card 20 mounted on the top plate 23 with the temperature measurement probe card 32. Therefore, the efficiency of the stage calibration operation can be improved.

[0064] As described above, since each pattern 10 of the temperature measuring wafer TW is composed of platinum, it is considered that when the resistance value of each pattern 10 of the temperature measuring wafer TW measured is converted into temperature based on the temperature resistance characteristics of platinum, the temperature of each pattern 10 can be obtained. However, the measured resistance value is affected not only by the resistance of the pattern 10, but also by the resistance of each electrode pad 11a, 11b. Therefore, the actual temperature of each pattern 10 cannot be accurately obtained by converting the measured resistance value into temperature based on the temperature resistance characteristics of platinum. Therefore, in the temperature measuring wafer TW, a correction value for converting the measured resistance value into the actual temperature is obtained for each pattern 10. Moreover, during the repeated use of the temperature measuring wafer TW, changes such as changes in the connection state of each pattern 10 and each electrode pad 11a, 11b occur over the years. Therefore, when the correction value obtained previously is continuously used, there is a problem that it is difficult to convert the measured resistance value into the correct actual temperature. Therefore, in the temperature measuring wafer TW, the correction value is periodically re-acquired. In the present embodiment, such re-acquisition (re-obtaining) of the correction value of each pattern 10 of the temperature measurement wafer TW is referred to as a “correction value calibration operation”.

[0065] Figure 4 FIG. 2 is a front view schematically showing the structure of a substrate inspection device 38 (calibration device) for acquiring correction values ​​of each pattern 10 of the temperature measurement wafer TW. Figure 4 In order to show the internal structure of the substrate inspection device 38, a part is also shown as a cross-sectional view. In addition, the structure of the substrate inspection device 38 is basically the same as that of the substrate inspection device 12, so only the structure and operation different from the substrate inspection device 12 will be described below.

[0066] exist Figure 4 In the substrate inspection device 38, a temperature measurement wafer TW is stored in a box C, a temperature measurement probe card 32 is mounted on the top plate 23 instead of the probe card 20, and the inspection section 14 has a calibration stage 39 instead of the stage 17. The calibration stage 39 is a substantially circular plate-shaped stage, and has a temperature adjustment mechanism (not shown) such as a Peltier element and a heater as the stage 17, and also has a bellows 40 that is arranged along the periphery and can be extended and retracted in the vertical direction (Z direction in the figure). In addition, the substrate inspection device 38 is configured to be able to communicate with an external information processing device, such as a server 42, via an information communication network, such as the Internet 41.

[0067] Figure 5A to Figure 5D It is used for illustration purposes Figure 4FIG. 1 is a process diagram of the correction value calibration operation of the substrate inspection device 38. First, in the substrate inspection device 38, the camera 25 captures the electrode pads 11a and 11b of each pattern 10 of the temperature measurement wafer TW placed on the calibration stage 39 at the center of the probe from above. Based on the captured image, the positions of the electrode pads 11a and 11b of each pattern 10 are grasped.

[0068] Next, based on the known positions of the electrode pads 11a and 11b of each pattern 10, the alignment mechanism 21 cooperates with the XY drive mechanism 19 to make each temperature measurement contact probe 33 face the electrode pads 11a and 11b of each pattern 10 ( Figure 5A ). Then, the lifting mechanism 18 raises the mounting table 17 so that each temperature measurement contact probe 33 of the temperature measurement probe card 32 contacts the electrode pads 11a and 11b of the corresponding patterns 10 ( Figure 5B ).

[0069] Next, the bellows 40 is extended upward in the figure. At this time, the bellows 40 is extended so that the upper end of the bellows 40 is sufficiently higher than the temperature measurement chip TW ( Figure 5C Then, an insulating coolant 43, such as HFE (hydrofluoroether), is supplied from a coolant supply port (not shown) provided on the calibration stage 39 to a space surrounded by the bellows 40 (hereinafter referred to as a "coolant space"), so that the temperature measuring wafer TW placed on the calibration stage 39 is immersed in the insulating coolant 43 ( Figure 5D ).

[0070] Here, the insulating refrigerant 43 supplied to the refrigerant space circulates between the refrigerant space and an external temperature controller (chiller) (temperature regulating device), and is temperature-regulated to a desired temperature by the temperature controller. In addition, the temperature controller can not only heat the circulating insulating refrigerant 43, but also cool it. Furthermore, the calibration stage 39 adjusts the temperature of the calibration stage 39 by a temperature regulating mechanism, and maintains the temperature of the insulating refrigerant 43 in the refrigerant space at a desired temperature. The difference between the temperature of the temperature measuring chip TW and the temperature (required temperature) of the insulating refrigerant 43 almost disappears over time due to the heat exchange between the temperature measuring chip TW and the insulating refrigerant 43. Thus, the temperature of the temperature measuring chip TW can be adjusted to a desired temperature.

[0071] In addition, in this embodiment, since the temperature measurement chip TW does not have wiring (no wiring is installed), there is no wiring floating in the cooling medium space, so a stirring device and a convection device (both not shown) can be easily arranged in the cooling medium space. Therefore, since the insulating cooling medium 43 can be stirred or convected in the cooling medium space, the temperature uniformity of the insulating cooling medium 43 can be improved.

[0072] In addition, the temperature of the insulating coolant 43 is measured by a high-precision temperature sensor 44 included in the substrate inspection device 38. After the temperature of the insulating coolant 43 is stabilized, power is supplied to each pattern 10 via each temperature measurement contact probe 33 of the temperature measurement probe card 32, thereby measuring the resistance value of each pattern 10. At this time, the resistance values ​​of multiple patterns 10 may be measured, or the resistance value of only one pattern 10 may be measured.

[0073] After that, the tester and device controller 15 obtains a correction value for converting the measured resistance value into the temperature of the insulating refrigerant 43 measured by the high-precision temperature sensor 44 for each pattern 10. Next, the obtained correction value is stored in association with the pattern 10 for which the resistance value used when obtaining the correction value is measured in the memory (storage device) of the server 42. For example, the obtained correction value is stored in association with the identification number of the corresponding pattern 10. After that, the correction value calibration operation is terminated.

[0074] As described above, in the present embodiment, the correction value of each pattern 10 reacquired (reacquired) is stored in the memory of the server 42 different from the substrate inspection apparatus 38, and the server 42 is connected to the Internet 41. Therefore, when the substrate inspection apparatus 12 and the substrate inspection apparatus 30 are connected to the Internet 41, the correction value of each pattern 10 reacquired stored in the memory of the server 42 can be used. For example, when the substrate inspection apparatus 12 and the substrate inspection apparatus 30 perform the stage calibration operation, the identification number of each pattern 10 of the temperature measurement wafer TW read by the camera is sent to the server 42 via the Internet 41. The server 42 sends the correction value associated with the received identification number of each pattern 10 to the substrate inspection apparatus 12 and the substrate inspection apparatus 30. The device controller 15 and the tester of the substrate inspection apparatus 12 and the substrate inspection apparatus 30 that receive the sent correction value of each pattern 10 convert the measured resistance value of each pattern 10 into temperature using the received correction value. Thus, the substrate inspection apparatus 12 and the substrate inspection apparatus 30 can accurately check the temperature adjustment capability of the temperature adjustment mechanism of the mounting table 17 using the correction value of each pattern 10 reacquired by the correction value calibration operation regardless of the installation location.

[0075] Furthermore, as described above, the structure of the substrate inspection device 38 is basically the same as that of the substrate inspection device 12, and thus can be easily installed in an inspection line for product wafers W composed of a plurality of substrate inspection devices 12. Thus, in the inspection line, not only the stage calibration operation of each substrate inspection device 12 but also the correction value calibration operation of the temperature measurement wafer TW can be performed, and thus the operation efficiency can be improved.

[0076] Furthermore, for example, it is considered that before the substrate inspection apparatus 12 is shipped to the customer, the correction value of each pattern 10 of the temperature measurement wafer TW is acquired using the substrate inspection apparatus 38 at the manufacturer of the substrate inspection apparatus 12, and the acquired correction value is stored in the memory of the server 42. In this case, at the customer's site, by using the correction value stored in the memory of the server 42, it is not necessary to acquire the correction value of each pattern 10 after the substrate inspection apparatus 12 is installed at the customer's site. As a result, the substrate inspection apparatus 12 can be quickly switched to an operating state at the customer's site.

[0077] Furthermore, in the present embodiment, the substrate inspection apparatus 12 or the substrate inspection apparatus 30, the substrate inspection apparatus 38, and the server 42 are connected so as to be able to communicate with each other via the Internet 41. Therefore, it can be said that they constitute a substrate temperature measurement system for performing temperature measurement (evaluation of the temperature control capability of the temperature control mechanism of the mounting table 17) using the temperature measurement wafer TW.

[0078] In addition, in the substrate inspection device 38, the calibration stage 39 having the bellows 40 is used, but a calibration stage 46 having the side wall 45 may be used instead of the calibration stage 39. Fig. 6A The calibration stage 46 is also a substantially disk-shaped stage, and has a temperature control mechanism (not shown) such as a Peltier element and a heater, similarly to the stage 17. The side wall 45 is a wall portion erected (standing) along the periphery of the calibration stage 46, and can supply an insulating refrigerant 43 to a space surrounded by the side wall 45 (hereinafter referred to as a "refrigerant space").

[0079] When the calibration stage 46 is used, first, an alignment is performed in which each temperature measurement contact probe 33 of the temperature measurement probe card 32 is aligned with the electrode pads 11a and 11b of each pattern 10 of the temperature measurement wafer TW. Fig. 6A ).

[0080] Then, each temperature measurement contact probe 33 is brought into contact with the electrode pads 11a and 11b of the corresponding pattern 10, and an insulating coolant 43 is supplied to the coolant space, so that the temperature measurement wafer TW placed on the calibration stage 46 is immersed in the insulating coolant 43 ( Figure 6B Here, the temperature of the insulating coolant 43 is maintained at a desired temperature by the same method as when the calibration stage 39 is used, and the temperature of the temperature measuring wafer TW is adjusted to a desired temperature.

[0081] At this time, the temperature of the insulating coolant 43 is also measured by the high-precision temperature sensor 44 of the substrate inspection device 38, and the resistance value of each pattern 10 can be measured. Then, for each pattern 10, a correction value for converting the measured resistance value to the measured temperature of the insulating coolant 43 can be obtained.

[0082] The temperature measurement wafer TW is transferred to the calibration stage 46 in a state where the temperature measurement wafer TW is lifted by the pins 47 so that the temperature measurement wafer TW does not interfere with the side wall 45 ( Figure 6C ).

[0083] Since the substrate inspection device 38 is assumed to be installed in the same inspection line as the substrate inspection device 12, its structure is basically the same as that of the substrate inspection device 12. However, in the case where it is not assumed to be installed in the same inspection line as the substrate inspection device 12, a substrate inspection device that performs the correction value calibration operation can also be more simply constructed.

[0084] For example, Fig. 7A As shown, the substrate inspection device 48 may also be composed of a mounting table 49 for mounting the temperature measuring wafer TW and an inspection unit 50 disposed above the mounting table 49. In this case, the mounting table 49 has a concave recessed portion 51 on the upper surface, and the temperature measuring wafer TW is disposed at the bottom of the recessed portion 51.

[0085] The stage 49 has a temperature control mechanism (not shown) such as a Peltier element and a heater, similarly to the stage 17. The inspection unit 50 has a base member 52 arranged to face the recessed portion 51 of the stage 49; a holder 53 provided on the lower surface of the base member 52; and a temperature measurement probe card 32 mounted on the lower surface of the holder 53. The inspection unit 50 has a camera 54 that can move forward and backward between the temperature measurement wafer TW at the bottom of the recessed portion 51 and the temperature measurement probe card 32.

[0086] In the inspection unit 50, the base member 52 is configured to be movable in two axial directions (X direction and Y direction in the figure), and the holder 53 is configured to be movable in the vertical direction (Z direction in the figure). In addition, similar to the substrate inspection device 38, the substrate inspection device 48 is also configured to be able to communicate with the external server 42 via the Internet 41.

[0087] In the substrate inspection device 48 , when the correction value calibration operation is performed, first, the temperature measurement wafer TW is photographed from above by the camera 54 , so that the positions of the electrode pads 11 a and 11 b of each pattern 10 are grasped.

[0088] Next, the camera 54 is withdrawn from between the temperature measurement wafer TW and the temperature measurement probe card 32 at the bottom of the recessed portion 51. Then, based on the known positions of the electrode pads 11a and 11b of each pattern 10, the base member 52 is moved in two axial directions so that each temperature measurement contact probe 33 of the temperature measurement probe card 32 is directly opposite to the electrode pads 11a and 11b of each pattern 10.

[0089] Thereafter, the card holder 53 moves downward, and each temperature measurement contact probe 33 of the temperature measurement probe card 32 is brought into contact with the electrode pads 11 a and 11 b of each corresponding pattern 10 .

[0090] Next, the insulating coolant 43 is supplied to the recessed portion 51 from a coolant supply port (not shown) provided on the mounting table 49, so that the temperature measuring wafer TW disposed at the bottom of the recessed portion 51 is immersed in the insulating coolant 43 ( Figure 7B ). The insulating coolant 43 supplied to the recessed portion 51 circulates between the external temperature controller and is temperature-controlled to a desired temperature. Furthermore, the mounting table 49 adjusts the temperature of the mounting table 49 by the temperature control mechanism, and maintains the temperature of the insulating coolant 43 in the recessed portion 51 at a desired temperature. Thus, the temperature of the temperature measurement wafer TW can be adjusted to a desired temperature.

[0091] In addition, the temperature of the insulating refrigerant 43 is measured by the high-precision temperature sensor 55 of the substrate inspection device 48, and the resistance value of each pattern 10 can be measured. After that, a correction value for converting the measured resistance value to the measured temperature of the insulating refrigerant 43 can be obtained for each pattern 10. The obtained correction value is associated with the pattern 10 whose resistance value used when obtaining the correction value is measured and stored in the memory of the server 42.

[0092] According to the present embodiment, the temperature measuring wafer TW is used in the stage calibration operation, and each temperature measuring contact probe 33 of the temperature measuring probe card 32 is brought into contact with the electrode pads 11a and 11b of each pattern 10 to measure the resistance value of each pattern 10. That is, since the temperature measuring wafer with a large number of wirings does not need to be used in the stage calibration operation, manual work by an operator is not required when handling (handling) the temperature measuring wafer. For example, since the temperature measuring wafer TW can be transported between the cassette C and the stage 17 by the wafer transport mechanism of the loader 13, the efficiency of the stage calibration operation is improved.

[0093] In addition, in the present embodiment, by using the temperature measurement wafer TW, it is not necessary to confirm whether the wiring is disconnected, so it is not necessary to increase the frequency of the calibration operation in order to confirm whether the wiring is disconnected. In addition, in the substrate inspection device 38, the temperature measurement wafer TW can be transported between the box C and the calibration stage 39 by using the wafer transport mechanism of the loader 13, so the efficiency of the correction value calibration operation is improved.

[0094] In addition, in the present embodiment, the temperature measuring wafer TW is immersed in the insulating coolant 43 during the correction value calibration operation, so that the temperature measuring wafer TW does not come into contact with the atmosphere, and the heat released from the temperature measuring wafer TW to the atmosphere can be suppressed. As a result, the temperature of the temperature measuring wafer TW during the correction value calibration operation can be easily adjusted. Thus, the efficiency of the correction value calibration operation can be further improved.

[0095] That is, in the present embodiment, since the efficiency of the stage calibration operation and the efficiency of the correction value calibration operation are both improved, the efficiency of the temperature measurement by the temperature measurement wafer TW can be improved.

[0096] In addition, in the above-mentioned substrate inspection apparatus 12, it is assumed that the operator manually replaces the probe card 20 for the stage calibration operation with the temperature measurement probe card 32. However, if the temperature measurement probe card 32 is in the same form as the probe card 20, the probe card transport mechanism (not shown) of the substrate inspection apparatus 12, such as SACC (Semi Automated Probe Card Changer), can be used to transport the temperature measurement probe card 32 and install it on the top plate 23. As a result, the efficiency of the stage calibration operation in the substrate inspection apparatus 12 can be further improved.

[0097] As mentioned above, although the preferred embodiment of the present invention was described, the present invention is not limited to the above-mentioned embodiment, and various modifications and changes can be made within the scope of the gist of the invention.

[0098] For example, in the present embodiment described above, in order to adjust the temperature of the temperature measuring wafer TW to a desired temperature in the correction value correction operation, the temperature measuring wafer TW is immersed in the insulating coolant 43 adjusted to a desired temperature. However, the temperature adjustment method of the temperature measuring wafer TW in the correction value correction operation is not limited to this, and the temperature of the temperature measuring wafer TW may be adjusted to a desired temperature without immersing the temperature measuring wafer TW in the insulating coolant 43.

[0099] For example, the substrate inspection device 12 may be used to mount the temperature measurement probe card 32 on the top plate 23, place the temperature measurement wafer TW on the mounting table 17, and adjust the temperature of the temperature measurement wafer TW to a desired temperature using the temperature adjustment mechanism of the mounting table 17. In this case, Figure 8As shown, the temperature of the mounting table 17 is measured by the high-precision temperature sensor 44, and a correction value for converting the measured resistance value of the pattern 10 into the measured temperature of the mounting table 17 is obtained. However, in this case, as described above, heat is released from the temperature measurement wafer TW to the atmosphere, so there is also a disadvantage that it takes time to adjust the temperature of the temperature measurement wafer TW. However, the correction value correction operation can be performed by simply adding the high-precision temperature sensor 44 to the general substrate inspection device 12 that inspects semiconductor devices of product wafers W. Therefore, there is an advantage that since it is dedicated to the correction value correction operation, it is not necessary to use a substrate inspection device 38 or a substrate inspection device 48 with a special structure.

[0100] In addition, in recent years, semiconductor devices such as GPU (Graphics Processing Unit) and CPU (Central Processing Unit) have a particularly high degree of integration and an increased heat generation, so the effect of the heat generated by the semiconductor device needs to be considered in the inspection of the semiconductor device. Furthermore, in the stage calibration operation, the effect of the heat generated by the semiconductor device on the temperature adjustment capability of the stage 17 needs to be considered. Therefore, in the substrate inspection device that inspects the product wafer W forming the GPU and CPU, a temperature measurement wafer TW is used instead of the temperature measurement wafer TW. Fig. 9 The temperature measurement wafer TW1 shown is used to perform the stage calibration operation.

[0101] like Fig. 9 As shown, the temperature measuring wafer TW1 has a structure basically the same as that of the temperature measuring wafer TW, but heaters 56 (heating elements) are arranged corresponding to each of the plurality of patterns 10. That is, the pattern 10 and the heater 56 form a one-to-one group, and the heater 56 is arranged adjacent to the corresponding pattern 10. The group of the pattern 10 and the heater 56 simulates a GPU or a CPU. In addition, the heater 56 is made of, for example, a metal such as tungsten, a nickel-chromium alloy, silicon carbide (SiC), or carbon, and can be provided on the surface of the temperature measuring wafer TW1, or can be buried in the temperature measuring wafer TW1.

[0102] In addition, in the temperature measuring wafer TW1, electrode pads 57a and 57b (other electrodes) are arranged at both ends of each heater 56. The electrode pads 57a and 57b are provided on the surface of the temperature measuring wafer TW1. When the stage calibration operation is performed, each temperature measuring contact probe 33 of the temperature measuring probe card 32 contacts not only the electrode pads 11a and 11b of a certain pattern 10, but also the electrode pads 57a and 57b of the heater 56 corresponding to the pattern 10. Then, by supplying power to the heater 56, the heater 56 generates heat, and the heat generation of the semiconductor device is reproduced.

[0103] Thus, in the stage calibration operation, the influence of the heat generated by the semiconductor device on the temperature adjustment capability of the stage 17 can be considered. In addition, even if a large number of GPUs and CPUs are formed on the product wafer W, the multiple GPUs and CPUs are not inspected at the same time, and usually, the GPUs and CPUs are inspected one by one. Therefore, in the stage calibration operation using the temperature measurement wafer TW1, the resistance value of a certain pattern 10 is measured, and only the corresponding heater 56 is heated. However, in the case of inspecting multiple GPUs and CPUs at the same time, in the stage calibration operation using the temperature measurement wafer TW1, the resistance value of multiple patterns 10 can also be measured, and the corresponding heaters 56 can be heated.

[0104] In addition, the number of heaters 56 arranged corresponding to each pattern 10 is not limited to one. For example, in order to simulate a GPU or CPU with a larger heat generation, a plurality of heaters 56, for example, two heaters 56, may be arranged in one pattern 10. Fig.10 ).

[0105] In the correction value calibration operation described above, a correction value is obtained for directly converting the measured resistance value of the pattern 10 to the actual temperature. However, a correction value may be obtained for converting the temperature calculated from the measured resistance value of the pattern 10 based on the temperature resistance characteristic of platinum to the actual temperature.

[0106] Furthermore, in the correction value calibration operation described above, after each temperature measuring contact probe 33 of the temperature measuring probe card 32 is brought into contact with the corresponding electrode pads 11a, 11b of each pattern 10, the temperature measuring wafer TW is immersed in the insulating coolant 43. However, after the temperature measuring wafer TW is immersed in the insulating coolant 43, each temperature measuring contact probe 33 may be brought into contact with the corresponding electrode pads 11a, 11b.

[0107] In addition, in this embodiment, the case where the technology of the present invention is applied to a single-wafer type substrate inspection device that inspects product wafers W piece by piece is described. However, the technology of the present invention can also be applied to a substrate inspection device of a multi-layer multi-unit structure, which includes a plurality of inspection chambers (units) and can inspect a plurality of product wafers W simultaneously by inspecting the product wafers W in each inspection chamber.

[0108] This application claims the priority based on Japanese Patent Application No. 2022-149201 for which it applied on September 20, 2022, and all the contents described in Japanese Patent Application are cited in this application.

[0109] Description of Reference Numerals

[0110] TW, TW1 Temperature Measurement Chip

[0111] 10 Pattern

[0112] 11a, 11b Electrode pads

[0113] 38, 48 substrate inspection device

[0114] 32 Temperature measurement probe card 32

[0115] 33 Contact probe for temperature measurement 33

[0116] 43 Insulating refrigerant.

Claims

1. A method for calibrating a temperature measuring substrate, wherein the temperature measuring substrate comprises a plurality of temperature measuring resistors, wherein electrodes are arranged on the temperature measuring substrate corresponding to each of the plurality of temperature measuring resistors, wherein the method for calibrating the temperature measuring substrate comprises: The step of making the needle-shaped body contact the electrode corresponding to at least one of the temperature measuring resistors; The step of immersing the temperature measuring substrate in an insulating refrigerant; The step of measuring the resistance value of the temperature measuring resistor by using the needle-shaped body via the electrode; The step of measuring the temperature of the insulating refrigerant; and A step of acquiring a correction value for converting the measured resistance value into the measured temperature of the insulating refrigerant.

2. The method for calibrating a temperature measuring substrate according to claim 1, wherein: By adjusting the temperature of the insulating coolant, the temperature of the temperature measuring substrate immersed in the insulating coolant is adjusted to a desired temperature.

3. The method for calibrating a temperature measuring substrate according to claim 1, wherein: After the needle-shaped body is brought into contact with the electrode, the temperature measurement substrate is immersed in an insulating coolant.

4. The method for calibrating a temperature measuring substrate according to claim 1, wherein: The acquired correction value is stored in a storage device in association with the temperature measuring resistor whose resistance value is measured.

5. The method for calibrating a temperature measuring substrate according to claim 1, wherein: After the temperature of the insulating refrigerant is stabilized, the resistance value of the temperature measuring resistor is measured.

6. The method for calibrating a temperature measuring substrate according to claim 1, wherein: The insulating refrigerant is circulated between the refrigerant and an external temperature adjustment device.

7. The method for calibrating a temperature measuring substrate according to claim 1, wherein: The insulating refrigerant is stirred or convected.

8. The method for calibrating a temperature measuring substrate according to claim 1, wherein: The temperature measuring resistor is made of a metal or a metal oxide whose resistance value changes with temperature.

9. A method for calibrating a temperature measuring substrate, the temperature measuring substrate comprising a plurality of temperature measuring resistors, wherein electrodes are arranged on the temperature measuring substrate corresponding to each of the plurality of temperature measuring resistors, the method for calibrating the temperature measuring substrate comprising: The step of placing the temperature measurement substrate on a mounting member capable of adjusting the temperature; The step of making the needle-shaped body contact the electrode corresponding to at least one of the temperature measuring resistors; The step of measuring the resistance value of the temperature measuring resistor by using the needle-shaped body via the electrode; The step of measuring the temperature of the mounting member; and A step of obtaining a correction value for converting the measured resistance value into the measured temperature of the mounting member.

10. A substrate temperature measurement system, characterized in that: include: A calibration device, which obtains a correction value for converting the resistance value of each temperature measuring resistor of the temperature measuring substrate into the actual temperature of each of the temperature measuring resistors, wherein the temperature measuring substrate includes a plurality of the temperature measuring resistors and electrodes corresponding to each of the temperature measuring resistors; storage device; and An inspection device for inspecting a semiconductor device formed on a product substrate, The calibration device, the storage device, and the inspection device are connected to each other in a manner capable of communicating with each other via an information communication network. The calibration device associates the acquired correction value with the temperature measuring resistor whose resistance value is measured, and stores the correction value in the storage device via the information communication network. The inspection device has a loading component that can load the product substrate and adjust the temperature of the product substrate. When using the temperature measuring substrate to confirm the temperature adjustment ability of the loading component, the correction value is received from the storage device via the information communication network, and the temperature of each of the temperature measuring resistors is measured based on the resistance value of each of the temperature measuring resistors using the received correction value.

11. A temperature measurement substrate, characterized in that: It includes multiple temperature measuring resistors. The temperature measurement substrate is provided with electrodes corresponding to each of the plurality of temperature measuring resistors, and a heating element is provided corresponding to each of the plurality of temperature measuring resistors.

12. The temperature measuring substrate according to claim 11, characterized in that: A plurality of the heating elements are arranged corresponding to one of the temperature measuring resistors.

13. The temperature measuring substrate according to claim 11, characterized in that: Other electrodes are arranged corresponding to each of the heating elements. The needle-shaped body contacts the electrode and the other electrodes, thereby supplying power to each of the temperature measuring resistors and each of the heating elements.

14. The temperature measuring substrate according to claim 11, characterized in that: The temperature measuring resistor and the heating element arranged corresponding to the temperature measuring resistor simulate a GPU or a CPU formed on a semiconductor wafer.

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