Plasma processing apparatus

Abstract

The invention provides a plasma processing apparatus capable of easily realizing compactness even under the condition that a plurality of antennas are arranged. A plasma processing apparatus (1) is provided with a vacuum container (2) and an antenna unit (14). The antenna part (14) is provided with: a conductor (14a1); two antennas (14b, 14c) provided in parallel; a first capacitor (C1a) having a conductor-side electrode (C11) and a first antenna electrode (C12a) connected to the antenna (14b); and a second capacitor (C1b) having a conductor-side electrode (C11) and a second antenna electrode (C12b) connected to the antenna (14c).

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus. Background Art

[0002] There is known a plasma processing apparatus that generates plasma inside the vacuum container using an antenna. The plasma processing apparatus performs a predetermined plasma processing on a workpiece using the generated plasma, depending on its type.

[0003] In addition, in a plasma processing apparatus, there is known a device that uses a branch antenna having a plurality of main branch antennas and a plurality of sub-branch antennas.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2003-224114 Summary of the invention

[0007] Problems to be solved by the invention

[0008] The plasma processing apparatus disclosed in Patent Document 1 is provided with a plurality of antennas, and there is room for improvement in order to achieve a more compact plasma processing apparatus.

[0009] The present disclosure has been made in view of the above-mentioned problems, and an object of the present disclosure is to provide a plasma processing apparatus that can be easily made compact even when a plurality of antennas are provided.

[0010] Technical means of solving problems

[0011] In order to solve the above-mentioned problem, a plasma processing device according to one aspect of the present disclosure includes: a vacuum container, which accommodates a processed object inside; and an antenna unit, wherein the antenna unit includes: two antennas, which are rod-shaped antennas that generate a high-frequency magnetic field for generating plasma inside the vacuum container and are arranged in parallel with each other; a conductor that supplies high-frequency current to both sides of the antennas; a first capacitor, which is composed of a first conductor-side electrode and a first antenna electrode, the first conductor-side electrode is connected to the conductor, the first antenna electrode is an electrode connected to one of the antennas and is connected to an end of the antenna; and a second capacitor, which is composed of a second conductor-side electrode and a second antenna electrode, the second conductor-side electrode is connected to the conductor, and the second antenna electrode is an electrode connected to the other antenna and is connected to an end of the antenna.

[0012] Effects of the Invention

[0013] According to one aspect of the present disclosure, it is possible to provide a plasma processing apparatus that can be easily made compact even when a plurality of antennas are provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] [ Figure 1 ] is a cross-sectional view of a plasma processing device according to one embodiment of the present disclosure.

[0015] [ Figure 2 ] is a three-dimensional diagram showing an example of the structure of the main parts of the plasma source of the plasma processing device.

[0016] [ Figure 3 ] is to explain Figure 1 A diagram showing a cross-sectional view of an example of a main structure of a plasma source shown.

[0017] [ Figure 4 ] is a diagram illustrating a top view of an example of the structure of the main parts of the plasma source.

[0018] [ Figure 5 ] is a diagram illustrating a cross-sectional observation of a main structural example of a plasma source of a plasma processing device according to a modified example of the present disclosure.

[0019] [ Figure 6 ] is to explain Figure 5 A diagram showing an example of a main structure of a plasma source as viewed from above. DETAILED DESCRIPTION

[0020] Below, use Figure 1 An embodiment of the present disclosure will be described in detail. Figure 1 It is a cross-sectional view of a plasma processing apparatus 1 according to an embodiment of the present disclosure.

[0021] In the following description, the plasma processing apparatus 1 that performs a film forming process of forming a predetermined film on the surface of the processing object H1 by a sputtering method using a target is exemplified as the predetermined plasma process.

[0022] However, the present disclosure can be applied to, for example, a plasma processing device that performs a film forming process of forming a predetermined film on the surface of the object H1 by a plasma chemical vapor deposition (CVD) method using plasma as a predetermined plasma process. In addition, the present disclosure can be applied to a plasma processing device that performs a surface processing process of performing a predetermined process on the surface of the object H1 using plasma, such as an etching process or an ashing process as a predetermined plasma process.

[0023] <Plasma processing device 1>

[0024] like Figure 1 As shown, the plasma processing apparatus 1 of the present embodiment includes: a vacuum container 2 that accommodates a workpiece H1 inside; and a target holder 3 that is detachably provided with respect to the vacuum container 2 and is used to arrange a target Tr inside the vacuum container 2. In addition, the plasma processing apparatus 1 of the present embodiment includes a plasma source 10 that generates plasma inside the vacuum container 2. The vacuum container 2 accommodates the workpiece H1 and a stage H for mounting the workpiece H1.

[0025] In the vacuum container 2, the workpiece H1 and the stage H are transported in and out of the vacuum container 2 and the outside by a transport device (not shown). The plasma source 10 is a source for generating an electromagnetic field for generating plasma inside the vacuum container 2. Figure 2 In the embodiment, the processing object H1 and the target Tr face each other in the up-down direction, and the target Tr is provided on the upper top surface of the vacuum container 2, for example.

[0026] In the vacuum container 2, the following film forming process is performed on the object H1 while maintaining a predetermined vacuum degree, that is, a film forming process is performed by sputtering the target Tr using plasma to form a film on the object H1. The object H1 may be, for example, a glass substrate or a synthetic resin substrate used in a liquid crystal panel display or an organic electroluminescence (EL) panel display. In addition, the object H1 may be a semiconductor substrate for various purposes. The plasma processing device 1 forms a predetermined film such as an oxide semiconductor or a magnetic material on the object H1 through the film forming process.

[0027] A gas supply mechanism (not shown) is connected to the vacuum container 2, and an inert gas such as argon is supplied into the vacuum container 2 by the gas supply mechanism. The plasma processing apparatus 1 is configured to perform the film forming process in an inert gas environment.

[0028] <Target support 3>

[0029] The target holder 3 includes a backing plate 6 for cooling the target Tr. The backing plate 6 is configured to be suitable for holding the target Tr corresponding to the above-mentioned film forming process.

[0030] The backing plate 6 includes, for example, an inlet 6a and an outlet 6b for allowing a cooling medium such as cooling water to flow in and out, and a flow path 6c communicating with the inlet 6a and the outlet 6b. The target Tr is adhered to the lower surface of the backing plate 6, for example.

[0031] During the film forming process, the target holder 3 holds the target Tr in such a manner that the main surface of the target Tr and the film forming surface of the workpiece H1 placed on the stage H face each other in a parallel state. In addition, in order to prevent abnormal discharge at the end of the target Tr, a grounding electrode (anode electrode) (not shown) covering the surface of the target Tr with a gap is provided on the target holder 3. The grounding electrode is electrically connected to the vacuum container 2 and is grounded via the vacuum container 2.

[0032] The target Tr is connected to a power source 8 via a back plate 6. During the film forming process, a pulsed DC voltage or AC voltage is applied from the power source 8 to the target Tr as a bias voltage. The bias voltage is a voltage that adjusts the ions (e.g., argon ions (Ar + The voltage introduced into the target Tr for sputtering is set to a value within a range of -200 V to -1 kV, for example.

[0033] <Plasma source 10>

[0034] The plasma source 10 includes an antenna unit 14 disposed outside the vacuum container 2. The antenna unit 14 includes two antennas 14b and 14c, which are rod-shaped antennas that generate a high-frequency magnetic field for generating plasma inside the vacuum container 2 and are arranged in parallel with each other. In addition, the plasma source 10 includes a housing shell 12, which is mounted on the vacuum container 2 and accommodates the two antennas 14b and 14c. Specifically, the housing shell 12 includes a metal flange portion 12F and is mounted on the vacuum container 2 via the metal flange portion 12F. In addition, the plasma source 10 includes a high-frequency window 11 that introduces the high-frequency magnetic field into the interior of the vacuum container 2.

[0035] <Example of the main structure of the plasma source 10>

[0036] Also used Figures 2 to 4 A main configuration example of the plasma processing apparatus 1 according to the present embodiment will be described in detail. Figure 2 1 is a perspective view showing an example of the structure of the main parts of the plasma source 10 . Figure 3 It is a description of Figure 1 The diagram shows a cross-sectional view of an example of a main structure of the plasma source 10 shown. Figure 4 1 is a diagram for explaining a top view of a main structure example of the plasma source 10. Figures 2 to 4 In order to simplify the drawings, the metal flange portion 12F is omitted. Figure 2 In order to simplify the drawing, the dielectric plate 13 provided in the high-frequency window 11 is omitted.

[0037] <Accommodation case 12>

[0038] like Figure 2 As shown, the housing 12 is configured in a box shape with an opening at the top. The housing 12 includes a metal plate 12a1, a metal plate 12a2, a metal plate 12a3, a metal plate 12b, and a metal plate 12c. These metal plates 12a1, 12a2, 12a3, 12b, and 12c are, for example, formed using a metal selected from the group consisting of copper, aluminum, zinc, nickel, tin, silicon, titanium, iron, chromium, niobium, carbon, molybdenum, tungsten, or cobalt, or an alloy thereof.

[0039] The metal plate 12a1, the metal plate 12a2, and the metal plate 12a3 are, for example, integrally formed. In other words, the metal plate 12a1, the metal plate 12a2, and the metal plate 12a3 are formed by bending a metal plate into a U-shape when viewed in cross section. Furthermore, the metal plate 12a1 and the metal plate 12a2 respectively form two mutually facing side surfaces of the housing 12. In addition, the metal flange portion 12F is integrally connected to the metal plate 12a1 and the metal plate 12a2. In addition, the metal plate 12a3 is continuously provided on the metal plate 12a1 and the metal plate 12a2, i.e., the two side surfaces, thereby forming the bottom surface of the housing 12.

[0040] The metal plates 12b and 12c are fixed to the metal plates 12a1, 12a2, and 12a3 at one end and the other end of the long side direction of the two linear antennas 14b and 14c of the antenna unit 14. In other words, the metal plate 12b forms a wall portion of the housing 12 that blocks the space surrounded by the metal plates 12a1, 12a2, and 12a3 at one end in the long side direction. In addition, the metal plate 12c forms a wall portion of the housing 12 that blocks the space surrounded by the metal plates 12a1, 12a2, and 12a3 at the other end in the long side direction. In this way, the housing 12 is configured into a box-like shape having the opening by the metal plates 12a1, 12a2, 12a3, 12b, and 12c.

[0041] The metal plates 12a1 and 12a2 are provided with a plurality of slits 12s spaced apart from each other along the longitudinal direction. In addition, the two antennas 14b and 14c are provided in the storage case 12 so as to face the slits 12s.

[0042] <High frequency window 11>

[0043] like Figure 3 and Figure 4As shown, the high-frequency window 11 has a metal plate 12a1 and a metal plate 12a2, which constitute a part of the housing 12 and are provided with a slit 12s. In addition, the high-frequency window 11 has a dielectric plate 13 overlapping the metal plates 12a1, 12a2, and 12a3 in a manner that blocks the slit 12s. In other words, the housing 12 also functions as a dielectric support portion that abuts against and supports the dielectric plate 13. In addition, the high-frequency window 11 introduces the high-frequency magnetic field from the two antennas 14b and 14c housed in the housing 12 into the interior of the vacuum container 2.

[0044] <Dielectric plate 13>

[0045] The dielectric plate 13 is made of a synthetic resin film such as fluorine resin. When the slit 12s is blocked, the dielectric plate 13 allows the high-frequency magnetic field from the two antennas 14b and 14c to pass through the inside of the vacuum container 2 and maintains the vacuum state inside the vacuum container 2.

[0046] In addition to the above description, the dielectric plate 13 may be any material as long as it is a magnetically permeable body, and may be made of, for example, a ceramic material such as alumina, silicon carbide, or silicon nitride, or an inorganic material such as quartz glass or alkali-free glass.

[0047] In addition, the housing case 12 is airtightly attached to the wall surface of the vacuum container 2 via the metal flange portion 12F. Thus, the housing case 12 is grounded via the vacuum container 2. Furthermore, in the housing case 12, slits 12s are provided in the metal plates 12a1 and 12a2. Thus, the housing case 12 is configured to allow the high-frequency magnetic field generated by the antenna portion 14 to pass through the inside of the vacuum container 2, while preventing the electric field generated by the antenna portion 14 from entering the inside of the vacuum container 2, in conjunction with the grounding.

[0048] <Antenna section 14>

[0049] like Figure 2 As shown, the antenna unit 14 includes a pair of conductors 14a1 and 14a2, two antennas 14b and 14c, a first capacitor unit C1, and a second capacitor unit C2. The conductor 14a1 is connected to one end of the antenna 14b in the long side direction and one end of the antenna 14c in the long side direction via the first capacitor unit C1. In addition, the conductor 14a2 is connected to the other end of the antenna 14b in the long side direction and the other end of the antenna 14c in the long side direction via the second capacitor unit C2.

[0050] The antenna unit 14 is provided with a cooling medium such as cooling water W ( Figure 3) circulation cooler 9. Specifically, the cooler 9 includes: a cooler body 9a, including a driving part such as a pump (not shown) for circulating cooling water W; a pipe 9b connected to the cooler body 9a and the conductor 14a1; and a pipe 9c connected to the cooler body 9a and the conductor 14a2. The cooler body 9a is configured to cool each part of the antenna part 14 to a specified temperature by circulating the cooling water W in the pipe 9b, the conductor 14a1, the first capacitor part C1, the antenna 14b and the antenna 14c, the second capacitor part C2, the conductor 14a2, and the pipe 9c in sequence.

[0051] The first capacitor unit C1 and the second capacitor unit C2 are respectively provided on the metal plate 12b and the metal plate 12c side, and have the same structure. Figure 3 and Figure 4 As shown, for example, the first capacitor unit C1 includes a first capacitor C1a, the first capacitor C1a includes a conductor-side electrode C11 and a first antenna electrode C12a, the conductor-side electrode C11 is connected to the conductor 14a1, the first antenna electrode C12a is an electrode connected to one of the antennas 14b, and is connected to the end of the antenna 14b via a cylindrical connecting member C13a. In addition, the first capacitor unit C1 includes a second capacitor C1b, the second capacitor C1b includes a conductor-side electrode C11 and a second antenna electrode C12b, the conductor-side electrode C11 is connected to the conductor 14a1, the second antenna electrode C12b is an electrode connected to the other antenna 14c, and is connected to the end of the antenna 14c via a cylindrical connecting member C13b.

[0052] In addition to the above description, the connection members C13a and C13b may not be provided, and the ends of the antennas 14b and 14c may be directly connected to the first antenna electrode C12a and the second antenna electrode C12b.

[0053] The conductor side electrode C11, the first antenna electrode C12a and the second antenna electrode C12b are made of metal materials such as copper, aluminum or alloys thereof or stainless steel and are formed in a cylindrical shape. The conductor side electrode C11 has an opening at the connection portion with the conductor 14a1, and cooling water W as a cooling medium can flow through the opening and between the conductor 14a1. The length dimension of the capacitor in the first capacitor C1a is Figure 3 The length dimension of the first antenna electrode C12a and the conductor-side electrode C11 facing each other, represented by "L1" in the figure. The length dimension of the capacitor in the second capacitor C1b is Figure 3 The length dimension between the second antenna electrode C12b and the conductor-side electrode C11 facing each other is indicated by “L2” in FIG.

[0054] In the first capacitor C1a, the cooling water W flows in the gap between the conductor side electrode C11 and the first antenna electrode C12a. The first capacitor C1a uses the cooling water W in the gap between the conductor side electrode C11 and the first antenna electrode C12a to form the dielectric layer of the first capacitor C1a. Similarly, in the second capacitor C1b, the cooling water W flows in the gap between the conductor side electrode C11 and the second antenna electrode C12b. The second capacitor C1b uses the cooling water W in the gap between the semiconductor side electrode C11 and the second antenna electrode C12b to form the dielectric layer of the second capacitor C1b.

[0055] In addition to the above description, a cylindrical insulating layer containing a dielectric material may be provided in the space between the conductor-side electrode C11 and the first antenna electrode C12a and the space between the conductor-side electrode C11 and the second antenna electrode C12b to constitute the dielectric layers of the first capacitor C1a and the second capacitor C1b.

[0056] Among them, as described above, the case where the dielectric layers of the first capacitor C1a and the second capacitor C1b are formed using the cooling water W is preferable in that the plasma processing apparatus 1 can be formed at a lower cost than the case where a dielectric layer is provided separately.

[0057] In the above description, the case where the first capacitor C1a and the second capacitor C1b use the integrally formed conductor-side electrode C11 is described. However, the present disclosure is not limited thereto, and the first capacitor C1a and the second capacitor C1b may be provided with the first conductor-side electrode and the second conductor-side electrode, respectively, and connected to the conductor 14a1.

[0058] As described above, when the conductor-side electrode C11 is integrally formed in the first capacitor C1a and the second capacitor C1b, the structures of the first capacitor C1a and the second capacitor C1b can be simplified, and the plasma processing apparatus 1 can be configured at low cost.

[0059] The conductor 14a1 and the conductor 14a2 are made of, for example, copper, aluminum, or alloys thereof, or stainless steel and are formed in a cylindrical shape. Similarly, the antenna 14b and the antenna 14c are made of, for example, copper, aluminum, or alloys thereof, or stainless steel and are formed in a cylindrical shape. These antennas 14b and 14c are arranged in a manner facing the high-frequency window 11 inside the housing 12. Thus, in the plasma processing device 1 of this embodiment, a high-frequency magnetic field from the antenna unit 14 can be reliably generated inside the vacuum container 2 via the high-frequency window 11.

[0060] In addition, the conductors 14a1 and 14a2 supply high-frequency current to the antennas 14b and 14c. The antennas 14b and 14c are rod-shaped antennas that generate high-frequency magnetic fields for generating plasma inside the vacuum container 2, and are arranged in parallel with each other. Specifically, the high-frequency power supply 15 is connected to the conductor 14a1, and the conductor 14a2 is grounded. In the antenna unit 14, a high-frequency current of, for example, 13.56 MHz is supplied from the high-frequency power supply 15 to the antennas 14b and 14c. In the plasma processing device 1, an induced electric field is generated in the vacuum container 2 by the high-frequency current flowing through the antennas 14b and 14c, and an inductively coupled plasma is generated.

[0061] like Figure 3 and Figure 4 As shown, the antenna unit 14 includes an insulator housing K1, which is disposed inside the housing 12 and holds a first capacitor C1a and a second capacitor C1b. The insulator housing K1 includes a cover K1a, a main body K1b, a side portion K1c, and a side portion K1d. In addition, the insulator housing K1 is made of, for example, a synthetic resin such as polyphenylene sulfide or a ceramic such as alumina.

[0062] The conductor 14a1 is airtightly mounted on the cover K1a. The parts of the first capacitor C1a, the parts of the second capacitor C1b, and the connecting members C13a and C13b are mounted on the main body K1b, and the side portion K1c is mounted on one end of the cover K1a and the main body K1b in a manner that fixes one end of the cover K1a and the main body K1b. The antenna 14b is airtightly mounted on the side portion K1c. The side portion K1d is mounted on the other end of the cover K1a and the main body K1b in a manner that fixes the other end of the cover K1a and the main body K1b. The antenna 14c is airtightly mounted on the side portion K1d.

[0063] The insulating housing K1 is provided with washers g1 and g2 as adjustment members capable of adjusting the distance between the two antennas 14b and 14c. Figure 3 As shown, the gasket g1 is disposed between the side portion K1c and the cover portion K1a and the main body portion K1b, and the gasket g2 is disposed between the side portion K1d and the cover portion K1a and the main body portion K1b. By adjusting the thickness of each of the gaskets g1 and g2, the distance between the object H1 to be processed and the two antennas 14b and 14c can be easily changed in the plasma processing device 1 of this embodiment. Thus, the density of the plasma from each antenna 14b and 14c relative to the object H1 to be processed can be changed.

[0064] In addition, in the insulator housing K1, as Figure 3As shown, the conductor 14a1 and the antennas 14b and 14c are attached to the insulator case K1 so that the antennas 14b and 14c form the following opening angle θ with respect to the conductor 14a1.

[0065] Specifically, in a first direction ( Figure 3 a direction indicated by a dotted chain line S1 in the figure), and a second direction (a direction indicated by a dotted chain line S1 in the figure) from the connection point between the conductor 14a1 and the conductor-side electrode C11 toward the connection point between the other antenna 14c and the second antenna electrode C12b. Figure 3 The first direction and the second direction are horizontal planes ( Figure 3 Thus, in the plasma processing apparatus 1 of the present embodiment, the plasma from the two antennas 14b and 14c can be appropriately applied to the object H1.

[0066] Furthermore, when the opening angle θ is set to an angle less than 60°, the first capacitor C1a, the second capacitor C1b, and the antennas 14b and 14c are close to the metal flange portion 12F, and thus current loss due to induced current occurs, so that plasma may not be properly generated inside the vacuum container 2. In addition, when the opening angle θ is set to an angle exceeding 180°, plasma may not be properly generated inside the vacuum container 2 for the same reason.

[0067] The plasma processing device 1 of the present embodiment configured as described above includes a vacuum container 2 that accommodates the workpiece H1 therein, and an antenna unit 14. The antenna unit 14 includes: a pair of conductors 14a1 and 14a2; and two antennas 14b and 14c that are arranged in parallel with each other and generate a high-frequency magnetic field for generating plasma inside the vacuum container 2. The antenna unit 14 includes: a first capacitor C1a having a conductor-side electrode C11 connected to the conductor 14a1 or the conductor 14a2 and a first antenna electrode C12a connected to the antenna 14b; and a second capacitor C1b having a conductor-side electrode C11 connected to the conductor 14a1 or the conductor 14a2 and a second antenna electrode C12b connected to the antenna 14c.

[0068] With the above structure, in the plasma processing device 1 of the present embodiment, the potential of the antenna 14b and the antenna 14c can be reduced by the first capacitor C1a and the second capacitor C1b, respectively. As a result, in the plasma processing device 1 of the present embodiment, the distance between the antenna 14b and the antenna 14c and the receiving shell 12 can be reduced. As a result, even in the case where a plurality of antennas are provided corresponding to the enlargement of the processed object H1, etc., the compactness of the plasma processing device 1 can be easily achieved. Furthermore, in the plasma processing device 1 of the present embodiment, the impedance of the antenna 14b and the antenna 14c can be reduced, thereby suppressing discharge to the grounded portion such as the vacuum container 2.

[0069] In addition, in the plasma processing device 1 of the present embodiment, the pair of conductors 14a1 and 14a2 are branched into the antenna 14b and the antenna 14c via the first capacitor unit C1 and the second capacitor unit C2, respectively. Therefore, compared with the case where the branching is performed using a metal joint, for example, in the plasma processing device 1 of the present embodiment, the size of the branching portion can be suppressed, and the short circuit with the vacuum container 2 can be easily suppressed. In addition, in the present embodiment, the branching portion is formed by attaching the conductor 14a1 or the conductor 14a2, the antenna 14b, and the antenna 14c to the insulator housing K1, so that the plasma processing device 1 can be formed at a low cost compared with the case where the branching portion is formed by welding.

[0070] Furthermore, in the plasma processing apparatus 1 of the present embodiment, since the antenna unit 14 is disposed outside the vacuum chamber 2 , plasma processing can be performed while suppressing an increase in the size of the vacuum chamber 2 .

[0071] In addition, in the plasma processing apparatus 1 of the present embodiment, the insulator case K1 holding the first capacitor C1a and the second capacitor C1b is disposed inside the housing case 12. The conductor 14a1 or the conductor 14a2, the antenna 14b, and the antenna 14c are supported by the housing case 12 via the insulator case K1 by being mounted on the insulator case K1. Therefore, in the plasma processing apparatus 1 of the present embodiment, by adjusting the position of the insulator case K1 in the housing case 12, the position of the antenna 14b and the antenna 14c can be easily controlled.

[0072] In addition, the plasma processing device 1 of this embodiment includes a pair of conductors 14a1 and 14a2, and a first capacitor C1a and a second capacitor C1b formed for each of the conductors 14a1 and 14a2. Therefore, in this embodiment, the antenna 14b and the antenna 14c can be easily lengthened, thereby easily improving the processing capacity of the plasma processing device 1.

[0073] In addition, the plasma processing apparatus 1 of this embodiment includes a cooler 9 for cooling each part of the antenna unit 14. Therefore, in this embodiment, each part of the antenna unit 14 can be appropriately cooled, and the plasma processing apparatus 1 can be operated more appropriately.

[0074] [Variation]

[0075] use Figure 5 and Figure 6 Modifications of the present disclosure will be described in detail. Figure 5 The diagram is a diagram for explaining a state of cross-sectional observation of a main part configuration example of a plasma source 10 of a plasma processing apparatus 1 according to a modified example of the present disclosure. Figure 6 It is a description of Figure 5 The main structure example of the plasma source 10 shown in FIG. 1 is a diagram of a case where the main structure example of the plasma source 10 is viewed from above. For the sake of convenience of description, the same reference numerals are given to the members having the same functions as the members described in the above embodiment, and the description thereof will not be repeated.

[0076] The main difference between this modification and the above-described embodiment is that, in the first capacitor unit C1 and the second capacitor unit C2, the electrode structures of the first capacitor C1a and the second capacitor C1b are changed.

[0077] like Figure 5 and Figure 6 As shown, in this modification, the conductor-side electrode connected to the conductor 14a1 includes a cylindrical conductor-side electrode body C11a and annular electrode parts C11b and C11c fixed to one end and the other end of the conductor-side electrode body C11a, respectively.

[0078] The first antenna electrode connected to the antenna 14b includes a cylindrical first antenna electrode main body C12a1 and an electrode portion C12a2 fixed to the first antenna electrode main body C12a1 so as to face the electrode portion C11b.

[0079] The second antenna electrode connected to the antenna 14c includes a cylindrical second antenna electrode main body C12b1 and an electrode portion C12b2 fixed to the second antenna electrode main body C12b1 so as to face the electrode portion C11c.

[0080] In the first capacitor C1a, the cooling water W in the space between the electrode portion C11b and the electrode portion C12a2 functions as a dielectric layer of the first capacitor C1a. In addition, in the second capacitor C1b, the cooling water W in the space between the electrode portion C11c and the electrode portion C12b2 functions as a dielectric layer of the second capacitor C1b.

[0081] With the above configuration, the plasma processing apparatus 1 of this modification achieves the same effects as those of the plasma processing apparatus of the above-described embodiment.

[0082] In the above description, the configuration having the antenna unit 14 disposed outside the vacuum container 2 is described. However, the present disclosure is not limited thereto, and the antenna unit 14 may be disposed inside the vacuum container 2.

[0083] 〔Summarize〕

[0084] In order to solve the above-mentioned problem, a first form of a plasma processing device disclosed in the present invention includes: a vacuum container, which accommodates a processed object inside; and an antenna unit, wherein the antenna unit includes: two antennas, which are rod-shaped antennas that generate a high-frequency magnetic field for generating plasma inside the vacuum container and are arranged in parallel with each other; a conductor that supplies high-frequency current to both sides of the antennas; a first capacitor, which is composed of a first conductor-side electrode and a first antenna electrode, the first conductor-side electrode is connected to the conductor, the first antenna electrode is an electrode connected to one of the antennas and is connected to an end of the antenna; and a second capacitor, which is composed of a second conductor-side electrode and a second antenna electrode, the second conductor-side electrode is connected to the conductor, and the second antenna electrode is an electrode connected to the other antenna and is connected to an end of the antenna.

[0085] With the above structure, it is possible to provide a plasma processing apparatus that can be easily made compact even when a plurality of antennas are provided.

[0086] A plasma processing apparatus according to a second aspect is the plasma processing apparatus according to the first aspect, wherein the antenna unit may be disposed outside the vacuum container.

[0087] With the above structure, plasma processing can be performed while suppressing an increase in the size of the vacuum container.

[0088] A third aspect of a plasma processing apparatus is the plasma processing apparatus of the second aspect, wherein a housing housing an insulator housing and the two antennas is mounted on the vacuum container, the insulator housing retaining the first capacitor and the second capacitor and having the two antennas mounted thereon.

[0089] With the above-described structure, the position of the insulator case can be adjusted within the storage case, thereby making it easy to control the position of the antenna.

[0090] A fourth form of a plasma processing device may be provided with a high-frequency window based on the third form of the plasma processing device, wherein the high-frequency window has a metal plate that constitutes a part of the containment shell and is provided with a slit, and a dielectric plate that overlaps the metal plate in a manner that blocks the slit, and introduces the high-frequency magnetic field into the interior of the vacuum container.

[0091] With the above structure, high-frequency magnetic fields from the two antennas can be reliably generated inside the vacuum container via the high-frequency window.

[0092] A plasma processing apparatus according to a fifth aspect is the plasma processing apparatus according to the third aspect or the fourth aspect, wherein the insulator housing may be provided with an adjustment member capable of adjusting a distance between the two antennas.

[0093] With the above configuration, the distance between the two antennas and the object to be processed can be easily changed by changing the length of at least one of the first capacitor and the second capacitor.

[0094] A sixth form of a plasma processing device is a plasma processing device according to any one of the third to fifth forms, wherein an opening angle formed by a first direction from a connection point between the conductor and the first conductor side electrode toward a connection point between one of the two antennas and the first antenna electrode, and a second direction from a connection point between the conductor and the second conductor side electrode toward a connection point between the other of the two antennas and the second antenna electrode is within a range of greater than 60° and less than 180°, and the first direction and the second direction are directions on a horizontal plane or directions downward relative to the horizontal plane.

[0095] With the above-described structure, the plasma from each of the two antennas can be appropriately applied to the object to be processed.

[0096] A plasma processing apparatus according to a seventh aspect is the plasma processing apparatus according to any one of the first to sixth aspects, wherein the antenna portion includes a pair of the conductors, and further includes the first capacitor and the second capacitor formed for each of the conductors.

[0097] With the above structure, the antenna can be easily lengthened, thereby easily improving the processing capacity of the plasma processing device.

[0098] The eighth form of the plasma processing device is based on the seventh form of the plasma processing device, wherein the conductor and the antenna are cylindrical in shape so as to allow a cooling medium to flow inside, and are configured so that the cooling medium flows in a gap between the first conductor side electrode and the first antenna electrode in the first capacitor, and in a gap between the second conductor side electrode and the second antenna electrode in the second capacitor.

[0099] With the above structure, each part of the antenna unit can be cooled, so that the plasma processing apparatus can be operated more appropriately.

[0100] A ninth aspect of the plasma processing apparatus is the plasma processing apparatus of the eighth aspect, wherein the cooling medium may constitute a dielectric layer of the capacitor.

[0101] With this structure, a plasma processing apparatus can be constructed at low cost compared to a case where a dielectric layer is separately provided.

[0102] A plasma processing apparatus according to a tenth aspect is the plasma processing apparatus according to any one of the first to ninth aspects, wherein the first conductor-side electrode and the second conductor-side electrode may be integrally formed as a conductor-side electrode.

[0103] With the above structure, the structures of the first capacitor and the second capacitor can be simplified, so that the plasma processing apparatus can be constructed at low cost.

[0104] The present disclosure is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in the embodiments are also included in the technical scope of the present disclosure.

[0105] Description of Figure Numbers

[0106] 1: Plasma treatment device

[0107] 2: Vacuum container

[0108] 9: Cooler

[0109] 11: High frequency window

[0110] 12: Containment Shell

[0111] 12a1, 12a2, 12a3: Metal plate

[0112] 12s: Slit

[0113] 13: Dielectric board

[0114] 14: Antenna

[0115] 14a1, 14a2: Conductor

[0116] 14b, 14c: Antenna

[0117] C1a: First capacitor

[0118] C1b: Second capacitor

[0119] C11: Conductor side electrode (first conductor side electrode, second conductor side electrode)

[0120] C11a: Conductor side electrode body

[0121] C11b, C11c, C12a2, C12b2: Electrode part

[0122] C12a: First antenna electrode

[0123] C12a1: First antenna electrode body

[0124] C12b: Second antenna electrode

[0125] C12b1: Second antenna electrode body

[0126] K1: Insulator shell

[0127] W: Cooling water (cooling medium, dielectric layer)

[0128] S1: First Direction

[0129] S2: Second direction

[0130] θ: Opening angle

Claims

1. A plasma processing device, comprising: A vacuum container for receiving the processed object inside; as well as Antenna Department, The antenna unit includes: Two antennas are rod-shaped antennas that generate a high-frequency magnetic field for generating plasma inside the vacuum container and are arranged in parallel with each other; A conductor for supplying high frequency current to both sides of the antenna; A first capacitor is composed of a first conductor side electrode and a first antenna electrode, wherein the first conductor side electrode is connected to the conductor, and the first antenna electrode is an electrode connected to one of the antennas and connected to an end of the antenna; and a second capacitor is composed of a second conductor side electrode and a second antenna electrode, wherein the second conductor side electrode is connected to the conductor, and the second antenna electrode is an electrode connected to the other antenna and connected to an end of the antenna.

2. The plasma processing apparatus according to claim 1, wherein: The antenna unit is disposed outside the vacuum container.

3. The plasma processing apparatus according to claim 2, wherein: An accommodating case accommodating an insulator case and the two antennas is mounted on the vacuum container, and the insulator case holds the first capacitor and the second capacitor and is mounted with the two antennas.

4. The plasma processing apparatus according to claim 3, wherein: A high-frequency window is provided. The high-frequency window includes a metal plate that constitutes a part of the housing case and is provided with a slit, and a dielectric plate that overlaps the metal plate so as to block the slit, and introduces the high-frequency magnetic field into the interior of the vacuum container.

5. The plasma processing apparatus according to claim 3, wherein: The insulator housing is provided with an adjustment component, and the adjustment component can adjust the separation distance between the two antennas.

6. The plasma processing apparatus according to claim 1, wherein: Within the range of an opening angle of greater than 60° and less than 180°, the first direction and the second direction are directions on a horizontal plane or directions downward relative to the horizontal plane, formed by a first direction from a connection point between the conductor and the first conductor side electrode toward a connection point between one of the two antennas and the first antenna electrode, and a second direction from a connection point between the conductor and the second conductor side electrode toward a connection point between the other of the two antennas and the second antenna electrode.

7. The plasma processing apparatus according to any one of claims 1 to 6, wherein: The antenna unit includes: a pair of said conductors, and The device further includes the first capacitor and the second capacitor formed for each of the conductors.

8. The plasma processing apparatus according to claim 7, wherein: The conductor and the antenna are cylindrical in shape so as to allow a cooling medium to flow inside, and are configured so that the cooling medium flows in a gap between the first conductor side electrode and the first antenna electrode in the first capacitor and in a gap between the second conductor side electrode and the second antenna electrode in the second capacitor.

9. The plasma processing apparatus according to claim 8, wherein: The cooling medium constitutes a dielectric layer of the first capacitor and the second capacitor.

10. The plasma processing apparatus according to claim 1, wherein: The first conductor-side electrode and the second conductor-side electrode are integrally configured as a conductor-side electrode.

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