Interlayer commensurate contact super-smooth block and preparation method thereof

Abstract

The application discloses interlayer commensurate contact super-smooth blocks and a preparation method thereof. The method uses an interlayer contact method to replace HOPG with a commensurate contact super-smooth material to prepare the super-smooth block, which can effectively avoid the delamination of the super-smooth block and guarantee the performance of the super-smooth block. On the other hand, the super-smooth block is prepared by using a rough substrate as a base, which helps to reduce the bonding force between the super-smooth block and the base, and facilitates the transfer of the super-smooth block to a target substrate. In addition, compared with the existing probe transfer method, the adhesive selected as the transfer medium has a size greater than or equal to the surface size of the smallest super-smooth block in all super-smooth blocks, so that at least two super-smooth blocks can be bonded to the adhesive, and batch transfer of the super-smooth block can be realized, thereby improving the transfer efficiency and the success rate of each transfer.

Description

TECHNICAL FIELD

[0001] The embodiment of the present application relates to the technical field of super-smooth material, in particular to a super-smooth block with interlayer congruence contact and a preparation method thereof. BACKGROUND

[0002] Super-smooth refers to a lubrication state in which the sliding friction coefficient between the surfaces of two objects is in the order of magnitude of 0.001 or smaller, and in this state, the friction energy consumption and wear rate are significantly reduced, which helps to reduce energy waste and material loss.

[0003] At present, the raw materials for preparing super-smooth blocks can include graphite, molybdenum disulfide and other materials, mainly the highly oriented pyrolytic graphite (HOPG) in graphite materials. HOPG is a new type of polycrystal composed of many sheet-shaped single-crystal graphite sheets with a thickness of about several to several tens of nanometers and a size of several to several tens of microns, and its performance is close to that of single-crystal graphite.

[0004] However, the HOPG super-smooth block made of HOPG currently has the problem of easy delamination, thereby affecting the performance of the super-smooth block; in addition, the HOPG super-smooth block can only be transferred to the surface of a target substrate one by one by using a probe (i.e., a probe transfer method), and in the case that the crystal size of a single HOPG is small, the transfer efficiency is obviously not ideal. SUMMARY

[0005] The embodiment of the present application provides a super-smooth block with interlayer congruence contact and a preparation method thereof, which is used for preparing a large-size super-smooth block which is not easy to delaminate and for efficiently and reliably transferring super-smooth blocks in batches.

[0006] The first aspect of the embodiment of the present application provides a preparation method of a super-smooth block with interlayer congruence contact, comprising:

[0007] obtaining a rough substrate and a congruence contact material; the rough substrate is a material substrate with a concave-convex structure on the upper surface, and the congruence contact material comprises a super-smooth material with interlayer contact in the form of congruence contact;

[0008] placing the congruence contact material on the upper surface of the rough substrate, and depositing a mask layer above the congruence contact material;

[0009] performing glue coating, photolithography and development processing on the mask layer, so that a photoresist pattern with a target pattern is presented above the mask layer;

[0010] taking the area where the photoresist pattern is located as a reference area, and performing through-form etching on the mask layer and the congruence contact material outside the reference area, so as to obtain at least one super-smooth block arranged according to the target pattern;

[0011] transferring and releasing at least one of the super-smooth blocks to a surface of a target substrate by using an adhesive, wherein a bonding force between the adhesive and the super-smooth blocks is greater than a bonding force between the super-smooth blocks and the rough substrate, and a size of a surface of the adhesive to be bonded is greater than or equal to a size of a smallest super-smooth block among all the super-smooth blocks.

[0012] Optionally, the commensurate contact material comprises an epitaxial single-crystal graphite generated by an epitaxial growth method.

[0013] Optionally, the etching of the mask layer and the commensurate contact material outside the reference region in a through form comprises:

[0014] The mask layer outside the reference region is etched in a through form by using an ion beam etching (IBE) process, and the commensurate contact material outside the reference region is etched in a through form by using an inductively coupled plasma (ICP) etching process, so that the mask layer and the commensurate contact material remaining are both in the target pattern.

[0015] Optionally, the ICP etching process uses an etching rate of 150 nm / min to 250 nm / min.

[0016] Optionally, when the adhesive comprises polydimethylsiloxane (PDMS), the process of transferring and releasing at least one of the super-smooth blocks to a surface of a target substrate by using an adhesive comprises:

[0017] bonding the PDMS to at least one of the super-smooth blocks, and applying an external force to the PDMS to transfer the super-smooth blocks to the surface of the target substrate;

[0018] heating the PDMS, so that each of the super-smooth blocks is released to the surface of the target substrate due to a decrease in the adhesion of the PDMS.

[0019] Optionally, an adhesion area between the PDMS and each of the super-smooth blocks is greater than or equal to a preset area determined based on a size of the super-smooth block bonded to the PDMS.

[0020] Optionally, the process of obtaining a rough substrate comprises:

[0021] obtaining a substrate without impurities, and performing glue coating, photolithography, and development processing on the substrate, so that a target patterned photoresist pattern is presented above the substrate;

[0022] The rough substrate with the concave-convex structure on the upper surface is prepared by taking the area where the photoresist pattern is located as a reference area, performing non-through etching on the substrate outside the reference area, and removing the photoresist pattern; wherein the non-through etching refers to that the depth of the etching on the substrate is less than the thickness of the substrate, and the pattern composed of each convex part in the rough substrate is the target pattern.

[0023] Optionally, the mask layer comprises a chromium layer made of a chromium element and a gold layer made of a gold element; wherein the gold layer is deposited on the upper surface of the chromium layer.

[0024] Optionally, the surface size of the super-smooth block is between 200 microns and 300 microns.

[0025] The second aspect of the embodiment of the present application provides a super-smooth block with interlayer commensurate contact, which is prepared by the preparation method in the first aspect or any specific embodiment of the first aspect.

[0026] From the above technical solutions, the embodiment of the present application has at least the following advantages:

[0027] The present inventor found through multiple rounds of practice that the main reason for the delamination of the existing HOPG super-smooth block is that the contact between every two adjacent single-crystal graphite sheets in the HOPG is non-commensurate contact. Therefore, the embodiment of the present application proposes to use a super-smooth material with interlayer contact in the form of commensurate contact to replace HOPG for preparing a super-smooth block, which can effectively avoid the delamination of the super-smooth block from the root cause and ensure the performance of the super-smooth block. On the other hand, using a rough substrate as a base to prepare a super-smooth block helps to reduce the bonding force between the super-smooth block and the base, facilitating the transfer of the super-smooth block to a target substrate. In addition, compared with the existing probe transfer method, the embodiment of the present application selects a sticky substance with a size greater than or equal to the surface size of the smallest super-smooth block in all super-smooth blocks as a transfer medium, so that at least two super-smooth blocks can be bonded to one piece of the sticky substance, enabling batch transfer of the super-smooth blocks and thus improving the transfer efficiency and success rate of each transfer. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed in the embodiment description. Obviously, the drawings in the following description are only some embodiments described in the present application, and other drawings can also be obtained by those skilled in the art according to these drawings.

[0029] It should be noted that although each step in the flowchart (if any) involved in the embodiments is drawn in sequence according to the indication of the arrow, unless explicitly stated herein, the execution of the steps has no strict sequence limitation, and the steps can be executed in other sequences. Moreover, at least part of the steps in the flowchart involved in the embodiments can include multiple steps or multiple stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence of the steps or stages is not necessarily sequential, but can be executed alternately or alternately with at least part of other steps or steps or stages in other steps.

[0030] Figure 1 A flowchart of a method for preparing an interlayer commensurate contact super-smooth block of an embodiment of the present application;

[0031] Figure 2 A super-smooth block preparation diagram of a method for preparing an interlayer commensurate contact super-smooth block of an embodiment of the present application;

[0032] Figure 3 A rough substrate preparation diagram of a method for preparing an interlayer commensurate contact super-smooth block of an embodiment of the present application. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical scheme and advantages of the present application clearer, the present application will be described in further detail below with reference to the accompanying drawings, and the described embodiments should not be regarded as limiting the present application, and all other embodiments obtained by those skilled in the art without making creative efforts fall within the scope of protection of the present application.

[0034] The terms "first", "second", "third", "fourth" and the like (if any) in the specification and claims of the present application and the accompanying drawings are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device that includes a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units that are not clearly listed or inherent to the process, method, product or device.

[0035] In the following description, reference is made to "one embodiment" or "one example" or similar expressions, which describe a subset of all possible embodiments. However, each of these terms is understood not to always refer to the same subset of all possible embodiments, and that "one embodiment" or "one example" can be combined with another "one embodiment" or "one example" although this is not always explicitly mentioned. In the following description, plural refers to at least two. If a value reaches a threshold (if any), in some examples, it can include the case that the former is greater than the threshold. If "any" or "at least one" or similar expressions are mentioned, it can specifically refer to any of the listed examples or any combination of these examples.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the application.

[0037] The method of the present application will be further described in detail below, and some specific possible implementation examples will be provided. In actual application, the implementation contents among these examples can be combined or implemented individually according to the corresponding functional principles and application logic. If combined, the execution order of the combined examples can be determined according to the respective processing logic, and can be determined according to the actual scene.

[0038] Please refer to Figure 1 The first aspect of the present application provides a specific embodiment of a preparation method of an interlayer commensurate contact super-smooth block, which includes the following operation steps:

[0039] Step S11, obtaining a rough substrate and a commensurate contact material;

[0040] The rough substrate is a material substrate with a concave-convex structure on the upper surface, which can be a substrate with a grid structure (which can be referred to as a grid substrate). The commensurate contact material includes a super-smooth material with an interlayer contact mode of commensurate contact.

[0041] Commensurate contact refers to a contact mode in which the atomic arrangement directions of two contact surfaces are consistent and intermeshed, achieving the minimum total energy, or forming a relatively stable contact interface in terms of energy. The present inventors have found through research that the atomic arrangement directions of the two contact surfaces (or commensurate surfaces) of the commensurate contact are the same, which enables the contact surfaces to match and closely contact each other, and the interaction force between the atoms can reach a relatively balanced state under this arrangement, thereby ensuring that the material with internal commensurate contact is not prone to delamination. Therefore, the present inventors have proposed through multiple rounds of experimental feasibility that a super-smooth material with commensurate contact can be selected as a raw material for preparing a super-smooth block.

[0042] In some examples, the common contact material can be natural graphite or epitaxial single crystal graphite, which will be described in detail below.

[0043] In step S12, the common contact material is placed on the upper surface of the rough substrate, and a mask layer is deposited above the common contact material.

[0044] In actual operation, the order of placing the common contact material on the upper surface of the rough substrate and depositing the mask layer above the common contact material can not be limited, and can be determined as appropriate. The mask layer can be one or more layers of metal material, for example, the mask layer is a chromium layer made of chromium elements and / or a gold layer made of gold elements, wherein the gold layer can be deposited on the upper surface of the chromium layer. The stacking relationship between the multiple layers of the mask layer can be determined as appropriate.

[0045] The plated mask layer can serve as a protective layer and island cover (or masking layer) for the upper surface of the common contact material. Taking epitaxial single crystal graphite (or simply graphite) as an example of the common contact material, the role of the mask layer as a protective layer includes: to some extent, it can prevent the graphite surface from being contaminated during the subsequent transfer process, and to some extent, it can prevent the graphite surface from being damaged during the subsequent etching operation.

[0046] In step S13, the mask layer is coated with glue, photoetched, and developed to form a photoresist pattern with a target pattern above the mask layer.

[0047] Specifically, a layer of photoresist can be spread on the mask layer using a glue spreader (i.e., coating), and a target pattern corresponding to the required graphite island (i.e., super-smooth block) can be formed in the photoresist layer using a photoetching overlay process (including exposure and development operations), so that part of the mask layer is exposed.

[0048] In step S14, the mask layer and the common contact material outside the reference area are etched in a penetrating manner with the area where the photoresist pattern is located as the reference area, to obtain at least one super-smooth block arranged according to the target pattern.

[0049] It can be understood that the photoresist pattern is etched and transferred to the underlying mask layer and common contact material in sequence, thereby obtaining multiple super-smooth blocks arranged according to the target pattern, and the mask layer is deposited above the super-smooth blocks as an island cover.

[0050] In step S15, the at least one super-smooth block is transferred and released to the surface of the target substrate using an adhesive.

[0051] In order to successfully transfer the graphite super-smooth block to other substrates, the following adhesive can be designed and selected as a transfer tool: the bonding force between the adhesive and the super-smooth block is greater than the bonding force between the super-smooth block and the rough substrate.

[0052] It is further illustrated that the present inventors have found through multiple rounds of practice that the reason why the existing HOPG super-smooth block is prone to delamination is that the contact between every two adjacent single-crystal graphite sheets inside the HOPG is non-commensurate contact. Therefore, the embodiments of the present application do not recommend using HOPG to prepare super-smooth blocks, and innovatively propose using a super-smooth material with interlayer contact in a commensurate manner to replace HOPG for preparing super-smooth blocks. In this way, the delamination of the super-smooth block can be effectively avoided from the root cause, and the performance of the super-smooth block is guaranteed.

[0053] In summary, the embodiments of the present application use a rough substrate as a base to prepare super-smooth blocks, which helps to reduce the bonding force between the super-smooth block and the base, and facilitates the transfer of the super-smooth block to a target substrate. In addition, the size of the super-smooth block is relatively small (micron level) from the naked eye, so compared with the existing probe transfer method, the embodiments of the present application specially design an adhesive as a transfer medium, with the size of the adhesive surface being greater than or equal to the surface size of the smallest super-smooth block among all the super-smooth blocks, so that one piece of adhesive has space to bond at least two super-smooth blocks, facilitating the batch transfer of super-smooth blocks, thereby improving the transfer efficiency and the success rate of each transfer.

[0054] Please refer to Figures 2 to 3 On the basis of the above example, some specific possible implementation examples will be provided below, which can be implemented in combination or individually, and if implemented in combination, the execution order between the combined examples can be determined according to the respective processing logic, which can be determined according to the actual scene.

[0055] In some specific examples, the above-mentioned commensurate contact material includes an epitaxial single-crystal graphite generated by epitaxial growth, which can be specifically a homoepitaxy.

[0056] Epitaxial growth refers to growing a single-crystal layer (which can be referred to as an epitaxial layer) on the surface of a clean substrate with a specific lattice. This single-crystal layer has the same crystal orientation as the substrate, as if the original crystal has been extended outward. Homoepitaxy refers to growing the same material on the same type of substrate. The epitaxial layer and the substrate have the same lattice structure, lattice constant, and doping type. It can be seen that the epitaxial growth material itself can exhibit the internal characteristics of commensurate contact, i.e., the epitaxial single-crystal graphite layer is commensurate and is not prone to delamination. Therefore, the embodiments of the present application use epitaxial single-crystal graphite instead of HOPG, which can prepare graphite super-smooth blocks that are not prone to delamination and are highly consistent.

[0057] In addition, the epitaxial single-crystal graphite is extended outward, so its size is large compared to HOPG. Therefore, the epitaxial single-crystal graphite can be used to prepare large-size graphite super-smooth blocks without being limited by the size of the crystal, meeting the actual demand. For example, the surface size of the prepared super-smooth block can be between 200 microns and 300 microns.

[0058] In some specific examples, the obtained commensurate contact material can be thinned to obtain a commensurate contact material of the desired thickness. Therefore, the process of obtaining the commensurate contact material may include: using heat-release tape to cleave the obtained commensurate contact material more than once to obtain a thinned commensurate contact material for fabricating a superslider. For example, an epitaxially grown single-crystal graphite block can be obtained, and heat-release tape can be used to cleave the epitaxial single-crystal graphite block. This can be understood as peeling off the surface layer of the epitaxial single-crystal graphite block using the adhesiveness of the tape. Afterward, the thinned single-crystal graphite can be released onto the rough substrate surface by heating (reducing the adhesiveness of the heat-release tape).

[0059] In some specific examples, the process of step S14 above, "etching through the mask layer and the commensurate contact material outside the reference area", may specifically include: using ion beam etching (IBE) to etch through the mask layer outside the reference area, and using inductively coupled plasma (ICP) etching to etch through the commensurate contact material outside the reference area, so that the remaining mask layer and commensurate contact material are presented according to the target pattern.

[0060] like Figure 2 As shown, ion beam etching (IBE) can be used to sequentially etch and transfer the photoresist pattern to the underlying gold and chromium layers, which serve as mask layers. Alternatively, inductively coupled plasma (ICP) etching can be used to etch and transfer the mask layer pattern to the underlying single-crystal graphite layer, thereby obtaining multiple independent single-crystal graphite supersliders. ICP etching achieves high aspect ratios and high etching rates, making it a suitable choice for etching thick single-crystal graphite supersliders, resulting in fast and efficient etching. In some specific examples, the etching rate used in ICP etching can be set between 150 nm / min and 250 nm / min.

[0061] Of course, if conditions permit, one etching process can be chosen instead of multiple etching processes to sequentially etch and transfer the photoresist pattern to each material layer below in one step.

[0062] In some specific examples, when the adhesive contains polydimethylsiloxane (PDMS), the process of step S15 above may specifically include: bonding PDMS to at least one super slider, applying external force to PDMS to drive the super slider to transfer to the surface of the target substrate; heating PDMS so that each super slider is released to the surface of the target substrate due to the reduction of PDMS viscosity.

[0063] like Figure 2As shown, the upper surface of the super-smooth block is contacted by a PDMS block with adhesion, and a downward force is applied to the PDMS block above the PDMS, so that the PDMS is in full and uniform contact with the upper surface of the single-crystal graphite super-smooth block, i.e., the adhesion between the two is enhanced. After the PDMS is contacted with the super-smooth block, an upward force is applied to the PDMS block, so that the PDMS with the bottom super-smooth block moves upward to achieve transfer. When the super-smooth block starts to be transferred, the bonding force between the PDMS and the super-smooth block should be greater than the bonding force between the super-smooth block and the substrate, so that the super-smooth block can be separated from the rough substrate and transferred. After the super-smooth block is separated from the rough substrate, it is placed on the surface of another substrate (such as a three-dimensional material substrate). At this time, the PDMS can be heated to reduce its adhesion, so as to release the super-smooth block on the PDMS to the surface of another substrate.

[0064] Some specific examples, in order to facilitate the bonding force between the PDMS and the super-smooth block to be greater than the bonding force between the super-smooth block and the substrate, the bonding area between the PDMS and each super-smooth block can be designed to be greater than or equal to a preset area, so as to ensure that the surfaces of the PDMS and the super-smooth block are in full and uniform contact. Specifically, the preset area can be determined based on the size of the super-smooth block bonded with the PDMS, for example, the preset area is at least greater than half the area of the super-smooth block bonded with the PDMS.

[0065] Of course, adhesive tape (such as heat-released adhesive tape) can also be used instead of PDMS as a transfer tool for super-smooth blocks. However, sometimes part of the adhesive tape is not transparent; while the PDMS is transparent, the contact effect between the bonding surfaces can be directly observed to determine whether it is sufficient and uniform, so as to facilitate reasonable force application and complete the work of transferring the super-smooth block.

[0066] In summary, the embodiments of the present application can use single-crystal graphite prepared by epitaxial growth to prepare super-smooth blocks, so as to obtain super-smooth blocks with large size (such as 200 to 300 microns), high uniformity (a few to tens of microns) and low delamination. In addition, the bonding force between single-crystal graphite and a rough substrate is weak, and using such a substrate as a base for preparing single-crystal graphite super-smooth blocks is conducive to subsequent transfer of the super-smooth blocks. When PDMS is used as a transfer tool for super-smooth blocks, the adhesion between the PDMS and the super-smooth block to be transferred can be controlled by heating to achieve release of the super-smooth block, and the PDMS can achieve batch transfer of the super-smooth block.

[0067] In some specific examples, the process of obtaining the rough substrate in step S11 can specifically include: obtaining a substrate without impurities, and performing glue coating, photoetching and developing treatment on the substrate, so that a photoresist pattern of a target patterning is presented above the substrate; taking the area where the photoresist pattern is located as a reference area, performing non-through etching on the substrate outside the reference area, and removing the photoresist pattern, to obtain a rough substrate with a concave-convex structure on the upper surface; wherein the non-through etching refers to that the depth of etching of the substrate is less than the thickness of the substrate, and the pattern composed of each convex part in the rough substrate is the target pattern.

[0068] As shown in Figure 3 , a layer of photoresist can be laid on the surface of the substrate without impurities (i.e., glue coating), and a photoetching process (which can include exposure and developing operations) is used to form a photoresist pattern of a target patterning in the photoresist layer, i.e., to expose part of the area of the substrate; then, non-through etching can be performed on the substrate outside the reference area, and the photoresist pattern is removed, to obtain a rough substrate with a grid structure on the upper surface. Preparing the grid substrate as a base for preparing the single-crystal graphite super-smooth block can reduce the bonding force between the super-smooth block and the substrate, which is conducive to the transfer of the super-smooth block, for example, facilitating the subsequent use of PDMS as a transfer medium to transfer the super-smooth block to other substrates, to realize rapid transfer in small batches.

[0069] The second aspect of the present application provides a specific embodiment of an interlayer commensurate contact super-smooth block, which is prepared by the preparation method described in the first aspect or any of the specific embodiments of the first aspect, and specific reference can be made to the related description shown in the above preparation method, which will not be repeated here. The super-smooth block prepared by the preparation method is not prone to delamination and is not limited by the size of the crystal, and the super-smooth block can be efficiently and reliably transferred in batches.

[0070] In summary, as shown in Figure 2 , Figure 3 , the preparation process of the interlayer commensurate contact super-smooth block described in the embodiments of the present application can include:

[0071] 1. Preparing a grid substrate (i.e., a rough substrate) by photoetching, developing and ICP etching processes.

[0072] 2. Obtaining an epitaxially grown single-crystal graphite, cleaving and thinning the single-crystal graphite block using a heat-released adhesive tape, and releasing the thinned single-crystal graphite to the surface of the rough substrate by heating.

[0073] 3. Depositing metal layers (i.e., mask layers) of chromium, gold and the like on the surface of the single-crystal graphite in sequence by a magnetron sputtering deposition process. The metal layers can serve as a protective layer on the upper surface of the super-smooth block and a mask layer during subsequent etching.

[0074] 4. Spin coating photoresist, and obtaining the required photoresist pattern through a laser direct writing photoetching process and a developing process.

[0075] 5. Through IBE etching process, the photoresist pattern is etched and transferred to the underlying gold and chromium layers in turn;

[0076] 6. Through ICP etching process, the pattern of the metal layer is etched and transferred to the single crystal graphite layer, thereby obtaining a plurality of independent single crystal graphite super-smooth blocks.

[0077] 7. A sticky, transparent PDMS block is used to contact the upper surface of the super-smooth block. A downward force is applied to the PDMS block above the PDMS, so that the PDMS fully and uniformly contacts the upper surface of the single crystal graphite super-smooth block.

[0078] 8. After the PDMS contacts the super-smooth block, a vertical upward force is applied to the PDMS block, and the PDMS with the bottom super-smooth block moves upward. At this time, the bonding force between the PDMS and the super-smooth block is greater than the bonding force between the super-smooth block and the substrate, so that the super-smooth block is separated from the grid substrate.

[0079] 9. After the super-smooth block is separated from the grid substrate, it is placed on another substrate surface. At this time, the PDMS can be heated to reduce its stickiness, thereby releasing the super-smooth block on the PDMS to the surface of another substrate.

[0080] The above examples are only used to illustrate the technical solutions of the present application, and are not limiting.

Claims

1. A method for preparing a superslider with interlayer comparability contact, characterized in that, include: Obtain a rough substrate and a compliant contact material; The rough substrate is a material substrate with an uneven structure on its upper surface, and the commensurate contact material includes a super-slippery material with commensurate contact as the interlayer contact method; The commensurate contact material is placed on the upper surface of the rough substrate, and a mask layer is deposited on top of the commensurate contact material; The mask layer is subjected to photoresist coating, photolithography and development processes to present a target patterned photoresist pattern on the mask layer; Using the area where the photoresist pattern is located as a reference area, the mask layer and the common contact material outside the reference area are etched in a through-type manner to obtain at least one super slider arranged according to the target pattern; At least one of the super sliders is transferred and released onto the surface of a target substrate using an adhesive; wherein the bonding force between the adhesive and the super slider is greater than the bonding force between the super slider and the rough substrate, and the size of the bonding surface in the adhesive is greater than or equal to the surface size of the smallest super slider among all the super sliders.

2. The method for preparing a superslider with interlayer comparability contact according to claim 1, characterized in that, The commensurate contact material comprises epitaxial single-crystal graphite generated by epitaxial growth.

3. The method for preparing a superslider with interlayer comparability contact according to claim 1 or 2, characterized in that, The etching of the mask layer and the commensurate contact material outside the reference region in a through-type manner includes: The mask layer outside the reference region is etched through using an ion beam etching (IBE) process, and the commensurate contact material outside the reference region is etched through using an inductively coupled plasma (ICP) etching process, so that the remaining mask layer and commensurate contact material are presented according to the target pattern.

4. The method for preparing a superslider with interlayer compatibility contact according to claim 3, characterized in that, The etching rate used in the ICP etching process is between 150 nm / min and 250 nm / min.

5. The method for preparing a superslider with interlayer comparability contact according to claim 1 or 2, characterized in that, When the adhesive comprises polydimethylsiloxane (PDMS), the process of using the adhesive to transfer and release at least one of the superslider pieces onto the surface of the target substrate includes: The PDMS is bonded to at least one of the super sliders, and an external force is applied to the PDMS to drive the super slider to transfer to the surface of the target substrate; The PDMS is heated, causing each of the supersliders to be released onto the surface of the target substrate due to the decrease in the viscosity of the PDMS.

6. The method for preparing a superslider with interlayer comparability contact according to claim 5, characterized in that, The bonding area between the PDMS and each of the super sliders is greater than or equal to a preset area, which is determined based on the size of the super slider bonded to the PDMS.

7. The method for preparing a superslider with interlayer comparability contact according to claim 1 or 2, characterized in that, The process of obtaining a rough substrate includes: A substrate free of impurities is obtained, and the substrate is subjected to photoresist coating, photolithography and development processes to present a target patterned photoresist pattern on the substrate. Using the area where the photoresist pattern is located as a reference area, the substrate outside the reference area is etched in a non-penetrating manner to remove the photoresist pattern, thereby obtaining a rough substrate with an uneven upper surface; wherein, the non-penetrating etching means that the depth of the substrate is etched is less than the thickness of the substrate, and the pattern formed by the protrusions in the rough substrate is the target pattern.

8. The method for preparing a superslider with interlayer comparability contact according to claim 1 or 2, characterized in that, The mask layer comprises a chromium layer made of chromium and a gold layer made of gold; wherein the gold layer is deposited on the upper surface of the chromium layer.

9. The method for preparing a superslider with interlayer comparability contact according to claim 1 or 2, characterized in that, The surface size of the super slider is between 200 micrometers and 300 micrometers.

10. A super slider with interlayer comparability contact, characterized in that, It is prepared by the super slider preparation method of interlayer comparability contact as described in any one of claims 1 to 9.

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