Silicon wafer cleaning agent and cleaning method for strip-shaped particle distribution on surface of silicon wafer

Abstract

The embodiment of the invention relates to the technical field of semiconductor silicon wafer cleaning, and discloses a silicon wafer cleaning agent and a cleaning method for strip-shaped particle distribution on the surface of a silicon wafer. The silicon wafer cleaning agent is prepared from the following raw materials in parts by weight: 30 to 45 parts of isomeric alcohol polyoxyethylene ether, 21 to 45 parts of a cationic surfactant, 5 to 10 parts of alkali, 1 to 5 parts of a corrosion inhibitor, 8 to 18 parts of sodium carbonate, 12 to 25 parts of sodium gluconate, 12 to 28 parts of a low-foaming surfactant, 50 to 60 parts of a decomposing agent, 0 to 20 parts of an organic solvent, 2 to 5 parts of a complexing agent, 2 to 5 parts of a buffering agent and 120 to 200 parts of deionized water. According to the silicon wafer cleaning agent, the distribution of strip-shaped particles on the surfaces of part of silicon wafers in a wafer box in the cleaning process is improved by adjusting the circulating flow of the liquid medicine tank and the ultrasonic current value, strip-shaped micro-damage to the surfaces of the silicon wafers caused by impact superposition of water flow and ultrasonic waves is prevented, and the clean silicon wafers with dispersed surface particles are obtained.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor silicon wafer cleaning, and in particular to a silicon wafer cleaning agent and a method for cleaning strip-shaped particles distributed on the surface of a silicon wafer. Background Art

[0002] In the production process of semiconductor chips, the cleanliness of the original single crystal material is extremely high, so the silicon wafer surface cleaning technology is an important link in the semiconductor silicon wafer manufacturing process, and the surface cleanliness of the silicon wafer is one of the important factors affecting the performance of semiconductor devices. According to statistics, defects caused by particle contamination in the production process of semiconductor devices account for 75% of the total number of defects. The presence of particles on the surface of the silicon wafer will directly affect the formation of the geometric features of the silicon wafer surface in the next process, as well as the quality of the electrical performance. Particles that fall on the key position of the device are likely to directly cause the device to fail. Therefore, effectively removing particles generated in the silicon wafer manufacturing process is of great significance to ensure the quality and stability of semiconductor devices.

[0003] In the cleaning process of silicon wafers, cleaning fluid plays a key role. The force of physical adsorption mainly comes from the van der Waals attraction between solids and adsorbed molecules. Its force is weak, impurities are loosely bound and easy to clean; while metal ions and organic impurities are adsorbed on the surface of silicon wafers by chemical bonds. Such adsorbed impurities are closely wetted with silicon wafers and require greater desorption energy during the cleaning process. Therefore, an excellent cleaning fluid is required to have a good metal ion chelation / cleaning effect, especially for easily contaminated metal ions such as iron, copper, and nickel; at the same time, it is required to have an excellent effect in preventing dirt deposition.

[0004] To this end, current silicon wafer cleaning solutions generally contain surfactants, metal ion chelators, alkaline agents and other components. Surfactants have significant wetting, emulsification, and dispersion effects. Alkaline agents can further enhance cleaning capabilities, while metal ion chelators can effectively remove metal pollutants. In addition, the cleaning process generally also includes an acid pickling step to reduce residues and avoid white spots. However, although the current cleaning solution has achieved good cleaning effects, it still has problems such as complex formula components, poor universality of cleaning substrates, substandard emissions, and safety and environmental risks.

[0005] At present, silicon wafer cleaning is not limited to a single cleaning method, and is usually adjusted and combined according to the silicon wafer manufacturing process. The distribution of particles on the surface of the silicon wafer is the result of the comprehensive effect of each tank in the cleaning machine after cleaning. The tank distribution, liquid concentration, temperature, water flow direction and ultrasonic / megasonic power all have an important impact on cleaning. Among the many cleaning methods, the combination of RCA standard cleaning and ultrasonic cleaning is a common silicon wafer cleaning process, which removes particles on the surface of the silicon wafer through SC-1 liquid (H2O2+NH4OH) and cavitation effect respectively. Among them, appropriate ultrasonic power is helpful for particle cleaning. If the ultrasonic power is too small, the particles cannot be effectively impacted and removed. If the power is too large, it will impact the surface of the silicon wafer at the same time, causing micro-damage to the surface of the silicon wafer. Summary of the invention

[0006] One purpose of the present application is to provide a silicon wafer cleaning agent and a cleaning method for striped particle distribution on the surface of silicon wafers. By adjusting the circulation flow rate of the liquid medicine tank and the ultrasonic current value, the distribution of striped particles on the surface of some silicon wafers in the wafer box during the cleaning process is improved, and the striped micro-damage on the surface of the silicon wafer caused by the superposition of water flow and ultrasonic impact is prevented, so as to obtain silicon wafers with dispersed and clean surface particles. This at least solves the problems of complex formula components, poor universality of cleaning substrates, substandard emissions, safety and environmental risks of the cleaning solution in the prior art, and the complex process and difficulty in regulation of the current silicon wafer cleaning method.

[0007] To achieve the above objectives, some embodiments of the present application provide the following aspects:

[0008] In a first aspect, some embodiments of the present application provide a silicon wafer cleaning agent composed of the following raw materials in parts by weight: 30-45 parts of isomeric alcohol polyoxyethylene ether, 21-45 parts of cationic surfactant, 5-10 parts of alkali, 1-5 parts of corrosion inhibitor, 8-18 parts of sodium carbonate, 12-25 parts of sodium gluconate, 12-28 parts of low-foaming surfactant, 50-60 parts of decomposer, 0-20 parts of organic solvent, 2-5 parts of complexing agent, 2-5 parts of buffer and 120-200 parts of deionized water.

[0009] Preferably, it is composed of the following raw materials in parts by weight: 38-45 parts of isomeric alcohol polyoxyethylene ether, 25-40 parts of cationic surfactant, 7-10 parts of alkali, 3-5 parts of corrosion inhibitor, 12-18 parts of sodium carbonate, 15-25 parts of sodium gluconate, 15-28 parts of low-foaming surfactant, 50-60 parts of decomposer, 16-20 parts of organic solvent, 3-5 parts of complexing agent, 2-5 parts of buffer and 180-200 parts of deionized water.

[0010] Preferably, the cationic surfactant is one of dodecyl dimethyl benzyl ammonium chloride, hexadecyl dimethyl benzyl ammonium chloride and octadecyl dimethyl benzyl ammonium chloride.

[0011] Preferably, the corrosion inhibitor includes one or more of ethanolamine, triethanolamine, and polysuccinimide.

[0012] Preferably, the decomposing agent includes one or more of thiodipropionate, phosphite, carbamate, and hydrogen peroxide.

[0013] Preferably, the complexing agent is one or more of ethylenediaminetetraacetic acid, nitrilotriacetic acid, sodium ethylenediaminetetramethylenephosphate, triethanolamine and benzoazole.

[0014] Preferably, the buffer is one or more of acetic acid and sodium bicarbonate.

[0015] In a second aspect, some embodiments of the present application further provide a method for preparing a silicon wafer cleaning agent, comprising the following steps:

[0016] (1) According to the formula, isomeric alcohol polyoxyethylene ether, cationic surfactant, alkali, and corrosion inhibitor are mixed and stirred uniformly to obtain component A;

[0017] (2) according to the formula, sodium carbonate, sodium gluconate, a low-foaming surfactant, a decomposer, an organic solvent, a complexing agent, a buffer and deionized water are mixed and stirred uniformly to obtain component B;

[0018] (3) Component A and component B are packaged separately and mixed before use.

[0019] On the third aspect, some embodiments of the present application also provide a method for cleaning the striped particles distributed on the surface of a silicon wafer, comprising a step of cleaning using a cleaning agent prepared by the preparation method, and improving the distribution of striped particles on the surface of some silicon wafers in a wafer box during the silicon wafer cleaning process by adjusting the circulation flow rate of the cleaning machine's chemical solution tank and the ultrasonic current value of the DIW tank.

[0020] Preferably, the specific cleaning method is: by increasing the circulation flow rate of the DHF tank to increase the flow rate of the drug solution, the circulation flow rate of the DHF tank is 30L / min, and at the same time reducing the ultrasonic working current of the DIW tank, the ultrasonic current of the DIW tank is 1A, to obtain a clean silicon wafer with dispersed particles.

[0021] Preferably, the distribution of strip-like particles on the surface of some silicon wafers in the wafer box during the silicon wafer cleaning process is improved by adjusting the circulation flow of the cleaning machine liquid (DHF) tank and the ultrasonic current value of the DIW tank, thereby preventing the strip-like micro-damage at fixed positions on the surface of the silicon wafer caused by the superposition of water flow and ultrasonic impact from affecting the use of the back-end customers, and obtaining silicon wafers with dispersed and clean surface particles.

[0022] Preferably, the distribution of strip-shaped particles at fixed positions on the surface of some silicon wafers (9-16 grooves) in the wafer box is improved during the silicon wafer cleaning process to obtain silicon wafers with dispersed and clean surface particles.

[0023] Preferably, the circulation flow rate of the DHF tank is increased to make the liquid flow faster so as to remove the particles on the surface of the silicon wafer, and the ultrasonic working current of the DIW tank is appropriately reduced to reduce the uneven ultrasonic impact caused by the wafer box blocking and water flow impact in the tank. The strip-shaped particle distribution on the surface of some silicon wafers (9-16 groove positions in the middle of the wafer box) is obtained. Clean silicon wafers with dispersed particles are obtained. This kind of strip-shaped particle distribution has been experimentally verified to be unable to be removed by backwashing. On the contrary, as the number of backwashing increases, the particle aggregation becomes more serious.

[0024] Compared with the related art, the solution provided by the embodiment of the present application has the following beneficial effects:

[0025] 1. In the cleaning process of silicon wafers in the present invention, the cleaning liquid has a good metal ion cleaning effect, especially for metal ions such as iron, copper, and nickel; and has an excellent effect of preventing dirt deposition;

[0026] 2. The preparation method and use method of the lotion of the present invention are simple, low in cost, suitable for industrial production, and greatly reduce the corrosiveness while not reducing the cleaning effect on the silicon wafer, thus forming a dynamic balance between cleaning and protecting the silicon wafer, avoiding the residue of the cleaning agent components on the surface of the silicon wafer, and optimizing the cleaning effect of the silicon wafer to the greatest extent;

[0027] 3. The present invention improves the distribution of strip-shaped particles on the surface of some silicon wafers in the wafer box during the cleaning process by adjusting the circulation flow rate of the liquid medicine tank and the ultrasonic current value, thereby preventing strip-shaped micro-damage on the surface of the silicon wafer caused by the superposition of water flow and ultrasonic impact, and obtaining a silicon wafer with dispersed and clean surface particles. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0029] Figure 1 This is a rendering of the effect of the silicon wafer before cleaning of the present invention;

[0030] Figure 2 This is a diagram showing the effect of the silicon wafer after cleaning of the present invention;

[0031] Figure 3 This is an operation diagram of the silicon wafer before backwashing of the present invention;

[0032] Figure 4This is an operation diagram of the silicon wafer backwashing twice of the present invention;

[0033] Figure 5 This is an operation diagram of the silicon wafer backwashing four times according to the present invention;

[0034] Figure 6 is a graph showing the change in the number of particles in the silicon wafer cleaning of the present invention;

[0035] Figure 7 It is a cleaning flow chart of the silicon wafer in the cleaning machine of the present invention;

[0036] Figure 8 It is a particle data diagram measured by SP-1 of the present invention;

[0037] Fig. 9 This is the effect diagram of the original process 1.4A of the present invention;

[0038] Fig.10 This is a rendering of the improved process 1A of the present invention;

[0039] Fig.11 This is the effect diagram of the improved process 0.6A of the present invention;

[0040] Fig.12 It is a box plot of the characteristic values ​​of the present invention. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0042] Example

[0043] Example 1

[0044] A silicon wafer cleaning agent is composed of the following raw materials in parts by weight: 30g of isomeric alcohol polyoxyethylene ether, 21g of cationic surfactant, 5g of alkali, 1g of corrosion inhibitor, 8g of sodium carbonate, 12g of sodium gluconate, 12g of low-foaming surfactant, 50g of decomposer, 5g of organic solvent, 2g of complexing agent, 2g of buffer and 120g of deionized water.

[0045] The cationic surfactant was dodecyl dimethyl benzyl ammonium chloride.

[0046] The corrosion inhibitor is ethanolamine.

[0047] The decomposition agent is thiodipropionate.

[0048] The complexing agent is ethylenediaminetetraacetic acid.

[0049] The buffer is acetic acid.

[0050] A method for preparing a silicon wafer cleaning agent comprises the following steps:

[0051] (1) According to the formula, isomeric alcohol polyoxyethylene ether, cationic surfactant, alkali, and corrosion inhibitor are mixed and stirred uniformly to obtain component A;

[0052] (2) according to the formula, sodium carbonate, sodium gluconate, a low-foaming surfactant, a decomposer, an organic solvent, a complexing agent, a buffer and deionized water are mixed and stirred uniformly to obtain component B;

[0053] (3) Component A and component B are packaged separately and mixed before use.

[0054] Example 2

[0055] A silicon wafer cleaning agent is composed of the following raw materials in parts by weight: 35g of isomeric alcohol polyoxyethylene ether, 28g of cationic surfactant, 7g of alkali, 4g of corrosion inhibitor, 15g of sodium carbonate, 18g of sodium gluconate, 15g of low-foaming surfactant, 55g of decomposer, 12g of organic solvent, 4g of complexing agent, 3g of buffer and 150g of deionized water.

[0056] The cationic surfactant was hexadecyl dimethyl benzyl ammonium chloride.

[0057] The corrosion inhibitor is polysuccinimide.

[0058] The decomposition agent is thiodipropionate.

[0059] The complexing agent is ethylenediaminetetraacetic acid.

[0060] The buffer is sodium bicarbonate.

[0061] A method for preparing a silicon wafer cleaning agent, characterized in that it comprises the following steps:

[0062] (1) According to the formula, isomeric alcohol polyoxyethylene ether, cationic surfactant, alkali, and corrosion inhibitor are mixed and stirred uniformly to obtain component A;

[0063] (2) according to the formula, sodium carbonate, sodium gluconate, a low-foaming surfactant, a decomposer, an organic solvent, a complexing agent, a buffer and deionized water are mixed and stirred uniformly to obtain component B;

[0064] (3) Component A and component B are packaged separately and mixed before use.

[0065] Example 3

[0066] A silicon wafer cleaning agent is composed of the following raw materials in parts by weight: 38g of isomeric alcohol polyoxyethylene ether, 35g of cationic surfactant, 8g of alkali, 5g of corrosion inhibitor, 15g of sodium carbonate, 22g of sodium gluconate, 21g of low-foaming surfactant, 57g of decomposer, 16g of organic solvent, 4g of complexing agent, 5g of buffer and 158g of deionized water.

[0067] The cationic surfactant was octadecyl dimethyl benzyl ammonium chloride.

[0068] The corrosion inhibitor is triethanolamine.

[0069] The decomposition agent is thiodipropionate.

[0070] The complexing agent is ethylenediaminetetraacetic acid.

[0071] The buffer is acetic acid.

[0072] A method for preparing a silicon wafer cleaning agent comprises the following steps:

[0073] (1) According to the formula, isomeric alcohol polyoxyethylene ether, cationic surfactant, alkali, and corrosion inhibitor are mixed and stirred uniformly to obtain component A;

[0074] (2) according to the formula, sodium carbonate, sodium gluconate, a low-foaming surfactant, a decomposer, an organic solvent, a complexing agent, a buffer and deionized water are mixed and stirred uniformly to obtain component B;

[0075] (3) Component A and component B are packaged separately and mixed before use.

[0076] Example 4

[0077] A silicon wafer cleaning agent is composed of the following raw materials in parts by weight: 45g of isomeric alcohol polyoxyethylene ether, 45g of cationic surfactant, 10g of alkali, 5g of corrosion inhibitor, 18g of sodium carbonate, 25g of sodium gluconate, 28g of low-foaming surfactant, 60g of decomposer, 20g of organic solvent, 5g of complexing agent, 5g of buffer and 200g of deionized water.

[0078] The cationic surfactant was dodecyl dimethyl benzyl ammonium chloride.

[0079] The corrosion inhibitor is ethanolamine.

[0080] The decomposition agent is thiodipropionate.

[0081] The complexing agent is ethylenediaminetetraacetic acid.

[0082] The buffer is acetic acid.

[0083] A method for preparing a silicon wafer cleaning agent comprises the following steps:

[0084] (1) According to the formula, isomeric alcohol polyoxyethylene ether, cationic surfactant, alkali, and corrosion inhibitor are mixed and stirred uniformly to obtain component A;

[0085] (2) according to the formula, sodium carbonate, sodium gluconate, a low-foaming surfactant, a decomposer, an organic solvent, a complexing agent, a buffer and deionized water are mixed and stirred uniformly to obtain component B;

[0086] (3) Component A and component B are packaged separately and mixed before use.

[0087] Comparative Example

[0088] Comparative Example 1

[0089] The difference between this comparative example and Example 3 is that no cationic surfactant is added, and the remaining steps and raw materials are the same as Example 3.

[0090] Comparative Example 2

[0091] The difference between this comparative example and Example 3 is that isomeric alcohol polyoxyethylene ether is not added, and the remaining steps and raw materials are the same as Example 3.

[0092] Comparative Example 3

[0093] The difference between this comparative example and Example 3 is that no corrosion inhibitor is added, and the remaining steps and raw materials are the same as Example 3.

[0094] Figure 7 : is a cleaning flow chart of the silicon wafer in the cleaning machine of the present invention, such as Figure 7 As shown, some embodiments of the present application also provide a method for cleaning the strip-shaped particles on the surface of a silicon wafer, wherein the cleaning agent prepared by the above preparation method is used for cleaning, and the distribution of strip-shaped particles on the surface of some silicon wafers in the wafer box during the silicon wafer cleaning process is improved by adjusting the circulation flow of the cleaning machine liquid (DHF) tank and the ultrasonic current value of the DIW tank. The strip-shaped micro-damage at a fixed position on the surface of the silicon wafer caused by the superposition of water flow and ultrasonic impact is prevented from affecting the use of the back-end customers, and a silicon wafer with dispersed and clean surface particles is obtained.

[0095] The specific cleaning method is: by increasing the circulation flow rate of the DHF tank to make the flow rate of the drug solution, the circulation flow rate of the DHF tank is 30L / min, and at the same time reducing the ultrasonic working current of the DIW tank, the ultrasonic current of the DIW tank is 1A, to obtain a clean silicon wafer with dispersed particles.

[0096] Original cleaning process:

[0097] DHF tank: circulation flow rate 17L / min

[0098] D IW slot: Ultrasonic current 1.4A

[0099] Improved process:

[0100] DHF tank: circulation flow rate 30L / min

[0101] D IW tank: Ultrasonic current 1A

[0102] By increasing the circulation flow rate of the DHF tank, the liquid flow rate is increased to remove the particles on the surface of the silicon wafer. At the same time, the ultrasonic working current of the D IW tank is appropriately reduced to reduce the uneven ultrasonic impact caused by the obstruction of the wafer box and the impact of the water flow in the tank. The strip-like particle distribution on the surface of some silicon wafers (9-16 grooves in the middle of the wafer box) is caused by the uneven ultrasonic impact. Figure 1 and Figure 2 As shown, a clean silicon wafer with dispersed particles is obtained. Figure 3-5 As shown, it has been experimentally verified that this kind of strip-like particle distribution cannot be removed by backwashing. On the contrary, as the number of backwashing increases, the particle aggregation becomes more serious.

[0103] 1) If Figure 6 As shown, the following experiment was designed by adjusting the 7-slot DHF circulation flow rate:

[0104] experiment Experimental conditions Control group Original process 17L / min Experimental Group 1 Improved process 9L / min Experimental Group 2 Improved process 30L / min

[0105] The experimental results are as follows Figure 8 shown.

[0106] The particle data measured by SP-1 show that:

[0107] The cleaning effects of particles with a particle size of 0.12-0.5um are: experimental group 2> experimental group 1> control group, that is, a DHF circulation flow rate of 30L / min can effectively wash away particles on the surface of the silicon wafer and obtain a clean silicon wafer with fewer small particles on the surface.

[0108] 2) By adjusting the ultrasonic working current of the 9-slot DIW, the following experiment was designed to observe the particle mode:

[0109]

[0110]

[0111] SP-1 measurement mode diagram Fig.12 It can be seen that:

[0112] In the control group, obvious strip-shaped particles appeared on the surface of the silicon wafer. In the experimental group 1, there were fewer and more dispersed particles on the surface of the silicon wafer. In the experimental group 2, there were more particles on the surface of the silicon wafer. This may be because the ultrasonic power was too small to effectively remove the particles.

[0113] The particle data measured by SP-1 are as follows Figure 8-10 It can be seen that:

[0114] The cleaning effect of particles with a particle size of 0.12-0.3um is as follows: the control group is slightly better than the experimental group 1, and the cleaning level of the particles in the experimental group 2 is poor.

[0115] In summary, if Fig.11 It can be obtained that the cleaning method of superimposing the circulating flow of the DHF tank and the ultrasonic working current of the DIW tank can effectively improve the strip-shaped clustered particles on the surface of the silicon wafer, obtain a clean silicon wafer with dispersed surface particles, and reduce the possibility of failure of the back-end semiconductor device due to the aggregation of particles on the silicon wafer surface.

[0116] The scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes that fall within the meaning and scope of the equivalent elements of the claims are included in the present application. Any figure mark in the claims should not be regarded as limiting the claims involved. In addition, it is clear that the word "comprising" does not exclude other units or steps, and the singular does not exclude the plural. Multiple units or devices stated in the device claim may also be implemented by one unit or device through software or hardware. The words "first", "second", etc. are only used to distinguish the description, and do not indicate any particular order, nor can they be understood as indicating or implying relative importance.

[0117] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily mention changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims, and the above embodiments should be regarded as exemplary and non-restrictive.

Claims

1. A silicon wafer cleaning agent, characterized in that: The invention is composed of the following raw materials in parts by weight: 30-45 parts of isomeric alcohol polyoxyethylene ether, 21-45 parts of cationic surfactant, 5-10 parts of alkali, 1-5 parts of corrosion inhibitor, 8-18 parts of sodium carbonate, 12-25 parts of sodium gluconate, 12-28 parts of low-foaming surfactant, 50-60 parts of decomposer, 0-20 parts of organic solvent, 2-5 parts of complexing agent, 2-5 parts of buffer and 120-200 parts of deionized water.

2. The silicon wafer cleaning agent according to claim 1, characterized in that: The invention is composed of the following raw materials in parts by weight: 38-45 parts of isomeric alcohol polyoxyethylene ether, 25-40 parts of cationic surfactant, 7-10 parts of alkali, 3-5 parts of corrosion inhibitor, 12-18 parts of sodium carbonate, 15-25 parts of sodium gluconate, 15-28 parts of low-foaming surfactant, 50-60 parts of decomposer, 16-20 parts of organic solvent, 3-5 parts of complexing agent, 2-5 parts of buffer and 180-200 parts of deionized water.

3. The silicon wafer cleaning agent according to claim 1, characterized in that: The cationic surfactant is one of dodecyl dimethyl benzyl ammonium chloride, hexadecyl dimethyl benzyl ammonium chloride and octadecyl dimethyl benzyl ammonium chloride.

4. The silicon wafer cleaning agent according to claim 1, characterized in that: The corrosion inhibitor includes one or more of ethanolamine, triethanolamine and polysuccinimide.

5. The silicon wafer cleaning agent according to claim 1, characterized in that: The decomposing agent includes one or more of thiodipropionate, phosphite, carbamate, and hydrogen peroxide.

6. The silicon wafer cleaning agent according to claim 1, characterized in that: The complexing agent is one or more of ethylenediaminetetraacetic acid, nitrilotriacetic acid, sodium ethylenediaminetetramethylenephosphate, triethanolamine and benzoazole.

7. The silicon wafer cleaning agent according to claim 1, characterized in that: The buffer is one or more of acetic acid and sodium bicarbonate.

8. The method for preparing the silicon wafer cleaning agent according to any one of claims 1 to 7, characterized in that: The following steps are involved: (1) According to the formula, isomeric alcohol polyoxyethylene ether, cationic surfactant, alkali, and corrosion inhibitor are mixed and stirred uniformly to obtain component A; (2) according to the formula, sodium carbonate, sodium gluconate, a low-foaming surfactant, a decomposer, an organic solvent, a complexing agent, a buffer and deionized water are mixed and stirred uniformly to obtain component B; (3) Component A and component B are packaged separately and mixed before use.

9. A method for cleaning strip-shaped particles on the surface of a silicon wafer, characterized in that: The step of using the cleaning agent prepared by the preparation method of claim 8 to clean the silicon wafer improves the distribution of strip-shaped particles on the surface of some silicon wafers in the wafer box during the silicon wafer cleaning process by adjusting the circulation flow of the cleaning machine solution tank and the ultrasonic current value of the DIW tank.

10. The method for cleaning strip-shaped particles on the surface of a silicon wafer according to claim 9, characterized in that: The specific cleaning method is: by increasing the circulation flow rate of the DHF tank to increase the flow rate of the drug solution, the circulation flow rate of the DHF tank is 30L / min, and at the same time reducing the ultrasonic working current of the DIW tank, the ultrasonic current of the DIW tank is 1A, to obtain a clean silicon wafer with dispersed particles.

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