Preheat ring including carbon heater, heating system, and processing chamber

Abstract

The present disclosure relates to pre-heat rings including carbon heaters for semiconductor manufacturing, and related heating systems, methods, and processing chambers. In one or more embodiments, a pre-heat ring suitable for semiconductor fabrication includes a ring structure and a carbon heater coupled to the ring structure. The carbon heater has a carbon content of at least 99% in atomic percent.

Description

Technical Field

[0001] The present disclosure relates to preheat rings including carbon heaters, and related heating systems, methods, and processing chambers for semiconductor manufacturing. Background Art

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. During processing, various parameters can affect the uniformity of material deposited on the substrate. For example, the temperature of the substrate and / or the temperature of the processing chamber components can affect the deposition uniformity.

[0003] Adjusting parameters (e.g., temperature) to achieve deposition uniformity is difficult. Substrate rotation (if used) can make adjustment more difficult. Additionally, adjusting parameters may involve increased chamber footprint, component contamination, increased cleaning processes, reduced component life, increased chamber downtime, and reduced throughput.

[0004]

[0006] Therefore, a need exists for improved processing chambers and related components that promote temperature uniformity and deposition uniformity. Summary of the invention

[0005] The present disclosure relates to preheat rings including carbon heaters and related heating systems, methods, and processing chambers for semiconductor manufacturing.

[0006] In one or more embodiments, a preheat ring suitable for use in semiconductor manufacturing includes a ring structure and a carbon heater coupled to the ring structure. The carbon heater has a carbon content of at least 99 atomic percent.

[0007] In one or more embodiments, a heating system suitable for use in semiconductor manufacturing includes a ring structure sized and shaped to be disposed in a processing chamber, a carbon heater coupled to the ring structure, and a power source configured to be electrically connected to the carbon heater.

[0008] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes a chamber body and a window, the chamber body and the window at least partially defining a processing volume. The processing chamber includes one or more heat sources and a substrate support, the one or more heat sources are configured to heat the processing volume, and the substrate support is disposed in the processing volume. The processing chamber includes a preheat ring, the preheat ring is at least partially disposed outside the substrate support. The preheat ring includes a ring structure and a carbon heater coupled to the ring structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to be able to understand the above-mentioned features of the present disclosure in detail, a more specific description of the present disclosure briefly summarized above can be obtained by reference to the embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings only show exemplary embodiments and are therefore not to be considered as limiting the scope thereof, and other equivalent embodiments may be allowed.

[0010] Figure 1 is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0011] Figure 2 According to one or more embodiments Figure 1 Schematic partial top view of the preheat ring and lower gasket shown in .

[0012] Figure 3 According to one or more embodiments Figure 2 Schematic perspective view of the preheating ring shown in .

[0013] Figure 4 is a schematic partial top view of a preheat ring according to one or more embodiments.

[0014] Figure 5 is a schematic partial top view of a preheat ring according to one or more embodiments.

[0015] Figure 6 According to one or more embodiments Figure 1 Schematic partial top view of a processing chamber shown in .

[0016] Figure 7 According to one or more embodiments Figure 1 Schematic perspective view of the auxiliary heat source and substrate shown in .

[0017] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It will be appreciated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0018] The present disclosure relates to preheat rings including carbon heaters, and related heating systems, methods, and processing chambers for semiconductor manufacturing.

[0019] The present disclosure contemplates that terms such as "coupled" may include, but are not limited to, embedding, bonding, welding, fusing, melting together, interference fit, and / or fastening, for example, with bolts, threaded connections, pins, and / or screws. In the present disclosure, terms such as "coupled" may include, but are not limited to, integrally formed. In the present disclosure, terms such as "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, for example, indirect coupling through components such as chains, blocks, and / or frames.

[0020] Figure 1 1 is a schematic side cross-sectional view of a process chamber 100 according to one or more embodiments. The process chamber 100 is a deposition chamber. In one or more embodiments, the process chamber 100 is an epitaxial deposition chamber. The process chamber 100 is used to grow an epitaxial film on a substrate 102. The process chamber 100 generates a cross flow of precursors on a top surface 150 of the substrate 102. Figure 1 The processing chamber 100 is shown in FIG. 1 in a processing state.

[0021] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed in the chamber body are a substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. In one or more embodiments, the upper heat source 141 includes an upper lamp, and the lower heat source 143 includes a lower lamp. In the present disclosure, other heat sources (in addition to or in place of lamps) may be used for the various heat sources described herein. For example, a resistive heater, a light emitting diode (LED), and / or a laser may be used for the various heat sources described herein.

[0022] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 supports the substrate 102. In one or more embodiments, the substrate support 106 includes a pedestal. The present disclosure contemplates other substrate supports (including, for example, a substrate carrier and / or one or more ring segments that support one or more outer regions of the substrate 102). A plurality of upper heat sources 141 are disposed between the upper window and the cover 154. The plurality of upper heat sources 141 form part of an upper heat source module 155.

[0023] A plurality of lower heat sources 143 are disposed between the lower window 110 and the bottom plate 152. The plurality of lower heat sources 143 form a portion of a lower heat source module 145. The upper window 108 is an upper dome and / or is formed of an energy-transmitting material (e.g., quartz). The lower window 110 is a lower dome and / or is formed of an energy-transmitting material (e.g., quartz).

[0024] An upper volume 136 and a purge volume 138 are formed between the upper window 108 and the lower window 110. The upper volume 136 and the purge volume 138 are part of the inner volume at least partially defined by the upper window 108, the lower window 110, and the one or more gaskets 111, 163. In one or more embodiments, the upper volume 136 is a processing volume.

[0025] The inner volume has a substrate support 106 disposed therein. The substrate support 106 includes a top surface 161 on which the substrate 102 is disposed. The substrate support 106 is attached to the shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment for the shaft 118 and / or the substrate support 106 within the upper volume 136.

[0026] The substrate support 106 may include a lift pin hole 107 disposed therein. The lift pin hole 107 is sized to accommodate lift pins 132 that are used to lift the substrate 102 from the substrate support 106 before or after performing a deposition process. When the substrate support 106 is lowered from the processing position to the transfer position, the lift pins 132 may rest on a lift pin stop 134. The lift pin stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0027] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more exhaust outlets 116. The one or more gas inlets 114 and the one or more purge gas inlets 164 are disposed on a side of the flow module 112 opposite to the one or more exhaust outlets 116.

[0028] A preheat ring 117 is disposed below the one or more gas inlets 114 and the one or more exhaust outlets 116. The preheat ring 117 is disposed above the one or more purge gas inlets 164. The preheat ring 117 is at least partially disposed outside the substrate support 106. One or more pads 111, 163 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from the reaction gas used during the deposition operation and / or the cleaning operation. The gas inlet 114 and the purge gas inlet 164 are each positioned to flow the corresponding one or more process gases P1 and one or more purge gases P2 parallel to the top surface 150 of the substrate 102 disposed in the upper volume 136. The gas inlet 114 is fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlet 164 is fluidly connected to one or more purge gas sources 162. The one or more exhaust outlets 116 are fluidly connected to the exhaust pump 157. The one or more processing gases P1 supplied using one or more processing gas sources 151 may include one or more reaction gases (e.g., one or more of silicon (Si), phosphorus (P) and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2)). The one or more purge gases P2 supplied using one or more purge gas sources 162 may include one or more inert gases (e.g., one or more of argon (Ar), helium (He) and / or nitrogen (N2)). The one or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, the one or more processing gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), and the one or more cleaning gases include hydrochloric acid (HCl).

[0029] The one or more exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects the one or more exhaust outlets 116 and the exhaust pump 157. The exhaust system 178 can facilitate controlled deposition of layers on the substrate 102. The exhaust system 178 is disposed on a side of the processing chamber 100 opposite the flow module 112.

[0030] The processing chamber 100 includes one or more liners 111, 163 (e.g., a lower liner 111 and an upper liner 163). The lower liner 111 and the upper liner 163 are disposed inside a chamber body (e.g., a flow module 112 and / or an upper body 156). The flow module 112 (which may be at least a portion of a sidewall of the processing chamber 100) includes one or more gas inlets 114 in fluid communication with the upper volume 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper liner 163 and the lower liner 111. The one or more second gas inlets 175 are in fluid communication with the one or more inlet openings 183 of the upper liner 163. The one or more liners 111, 163 include one or more protrusions 167 that support the preheat ring 117.

[0031] The preheat ring 117 is a temperature controlled preheat ring. The preheat ring 117 includes a ring structure 170 and a carbon heater 171 coupled to the ring structure 170. The size and shape of the ring structure 170 are suitable for being disposed in the processing chamber 100. The carbon heater 171 has a carbon content of at least 99% by atomic percentage. In one or more embodiments, the carbon content is at least 99.99% (e.g., 4N or higher), such as at least 99.999% (e.g., 5N or higher) by atomic percentage. The carbon heater 171 is substantially free of metals (e.g., aluminum and steel). The metal content of the carbon heater 171 is less than 1%, such as less than 0.1%, such as less than 0.01% or 0.001% or less by atomic percentage. In one or more embodiments, the carbon heater 171 is embedded in the ring structure 170. In one or more embodiments, the carbon heater 171 comprises a carbon wire. The preheat ring 117 is part of a heating system 168 that includes a power source 173 configured to be electrically connected to a carbon heater 171 using a pair of wires 174a, 174b. In one or more embodiments, the carbon heater 171 is formed of carbon fibers, graphene, and / or carbon nanotubes.

[0032] The first wire 174a is an input wire that supplies current flowing through the carbon heater 171, and the second wire 174b is an output wire that receives current from the carbon heater 171. The heating system 168 includes a controller (e.g., a power-dedicated controller or controller 190) that communicates with the power supply 173. The controller controls the power of the electrical energy (e.g., current) supplied to the carbon heater 171 through the first wire 174a, thereby controlling the temperature of the ring structure 170. The controller can control the temperature of the ring structure 170 in an open loop or a closed loop. The heating system 168 also includes a temperature sensor (e.g., one or more of the temperature sensors 195-198) that communicates with the controller, and the temperature sensor is configured to measure the temperature of the ring structure 170. In addition to or in place of the temperature sensors 195-198, a temperature sensor 199 (e.g., a thermocouple) can be coupled to the ring structure 170 to measure the temperature of the ring structure 170. The thermocouple can be at least partially embedded in the ring structure 170. The controller may receive a temperature measurement of the ring structure 170 and control (e.g., change) the power supplied by the power supply 173 to control (e.g., adjust) the temperature of the ring structure 170. As an example, the controller may compare the measured temperature of the ring structure 170 with a target temperature and adjust the power supplied by the power supply 173 based on the target temperature. The target temperature may be stored in a memory (e.g., a memory 191 of the controller 190 described below).

[0033] In one or more embodiments, an auxiliary heat source 194 is used in addition to the carbon heater 171 and the heat sources 141, 143. In one or more embodiments, the auxiliary heat source 194 comprises a laser source (e.g., a collimated laser source), the heat sources 141, 143 comprise lamps, and the carbon heater 171 comprises a resistive heater.

[0034] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases P1 flow through one or more gas inlets 114, through one or more gaps, and into the upper volume 136 to flow over the substrate 102. During a deposition operation, a carbon heater 171 is used to heat the ring structure 170. The one or more process gases P1 flow through the ring structure 170, so that the one or more process gases P1 used to deposit a film on the substrate 102 are preactivated before the one or more process gases P1 flow through the substrate 102. The heating of the ring structure 170 facilitates deposition of films in outer regions (e.g., edge regions) of the substrate 102, which improves deposition uniformity (e.g., center-to-edge uniformity). The carbon heater 171 improves deposition uniformity while facilitating reduction of particle contamination of the substrate 102 and / or reduction of degradation of chamber components (e.g., the ring structure 170 and / or one or more liners 111, 163).

[0035] The present disclosure also contemplates that one or more purge gases P2 are provided to the purge volume 138 (through one or more purge gas inlets 164) and exhausted from the purge volume 138 during deposition operations. The one or more purge gases P2 flow simultaneously with the one or more process gases P1. The one or more process gases P1 are exhausted through the gap between the upper liner 163 and the lower liner 111 and through the one or more exhaust outlets 116. The one or more purge gases P2 may be exhausted through the one or more outlets and through the same one or more exhaust outlets 116 as the one or more process gases P1. The present disclosure contemplates that the one or more purge gases P2 may be discharged separately through one or more second exhaust outlets separate from the one or more exhaust outlets 116.

[0036] During cleaning operations, one or more cleaning gases flow through one or more gas inlets 114 , through one or more gaps (located between upper liner 163 and lower liner 111 ), and into upper volume 136 .

[0037] The processing system includes one or more sensors 195, 196, 198 (e.g., temperature sensors) configured to measure a parameter (e.g., temperature) within the processing chamber 100. In one or more embodiments, the one or more sensors 195, 196, 198 include a central sensor 196 and one or more outer sensors 195, 198. A controller 190 (described below) may control the one or more sensors 195, 196, 198, 199, the carbon heater 171, and / or the one or more heat sources 141, 143, and may use at least one of the one or more sensors 195, 196, 198, 199, the carbon heater 171, and / or the one or more heat sources 141, 143 to implement a method of adjusting substrate processing uniformity. In one or more embodiments, the one or more sensors 195, 196, 198 each include a pyrometer, such as a pyrometer including a silicon sensor. In one or more embodiments, each sensor 195, 196, 198 is an optical sensor, such as an optical pyrometer. The present disclosure contemplates that sensors other than pyrometers may be used, and / or that one or more of sensors 195 , 196 , 198 may measure properties other than temperature.

[0038] In one or more embodiments, the sensors 195, 196, 198 include one or more upper sensors 196, 198 disposed above the substrate 102 and adjacent to the cover 154, and one or more lower sensors 195 disposed below the substrate 102 and adjacent to the base plate 152. The present disclosure contemplates that at least one of the one or more lower sensors 195 can be vertically aligned below at least one of the upper sensors 196, 196 (e.g., outer sensor 198).

[0039] Each sensor 195, 196, 198 may be a single wavelength sensor device or a multi-wavelength (e.g., dual wavelength) sensor device. In one or more embodiments, a system including a processing chamber 100 includes any one, any two, or any three of the four illustrated sensors 195, 196, 198. In one or more embodiments, the processing chamber 100 includes one or more additional sensors in addition to the sensors 195, 196, 198. In one or more embodiments, the processing chamber 100 may include sensors disposed at different locations and / or having different orientations than the illustrated sensors 195, 196, 198.

[0040] As shown, controller 190 is in communication with processing chamber 100 and is used to control the operation of processes and methods, such as the methods described herein.

[0041] The controller 190 is configured to receive data or input as sensor readings from (one or more) sensors (e.g., one or more of sensors 195, 196, 198, 199). The sensors may include, for example: sensors that monitor the growth of a layer on the substrate 102; and / or sensors that monitor the temperature of the ring structure 170, the substrate 102, the substrate support 106, and / or the pads 111, 163. The controller 190 is equipped with or communicates with a system model of the processing chamber 100. The system model includes a heating model, a temperature uniformity model, a film uniformity model, a film deposition rate model, a coating model, a rotational position model, and / or a gas flow model. The system model is a program configured to estimate parameters within the processing chamber 100 (e.g., signal distribution (e.g., temperature distribution) of the substrate 102 and / or the substrate support 106, gas flow rate, gas pressure, rotational position of components, heating distribution, coating conditions, and / or cleaning conditions) throughout the deposition operation and / or cleaning operation. The controller 190 is also configured to store readings and calculation results. The readings and calculations include previous sensor readings, such as any previous sensor readings within the process chamber 100. The readings and calculations also include calculated values ​​stored after the controller 190 measures the sensor readings and runs them through the system model. Therefore, the controller 190 is configured to retrieve the stored readings and calculations and save the readings and calculations for future use. Retaining previous readings and calculations enables the controller 190 to adjust the system model over time to more accurately reflect the state of the process chamber 100.

[0042] The controller 190 can monitor heating, generate a signal profile (e.g., a temperature profile), identify settings for one or more heat sources, adjust the heating profile, adjust the heating power (e.g., the power provided by the power supply 173), estimate an optimization parameter (e.g., a target temperature), adjust one or more sensors 195-199, generate an alarm on a display, stop a deposition operation, initiate a chamber downtime period, delay a subsequent iteration of a deposition operation, initiate a cleaning operation, stop a cleaning operation, and / or otherwise adjust a processing regimen.

[0043] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), a memory 191 containing instructions, and support circuits 192 for the CPU 193. The controller 190 controls various objects directly or through other computers and / or controllers. In one or more embodiments, the controller 190 is communicatively coupled to a dedicated controller, and the controller 190 acts as a central controller.

[0044] The controller 190 is any form of general purpose computer processor that is used in an industrial environment to control various substrate processing chambers and equipment and sub-processors thereon or therein. The memory 191 or non-transitory computer readable medium is one or more of readily available memories, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM) and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage device, local or remote. The support circuit 192 of the controller 190 is coupled to the CPU 193 to support the CPU 193. The support circuit 192 includes cache, power supply, clock circuit, input / output circuit and subsystem, etc. The operating parameters (e.g., target temperatures of the ring structure 170 and / or substrate 102, readings, signal differences, signal distributions, heating power (e.g., applied to the carbon heater 171 and / or one or more heat sources 141, 143), adjustment factors, threshold ratios, ranges to which the signal differences are compared and / or training ranges, cleaning recipes, and / or processing recipes) and operations are stored in the memory 191 as a software program that is executed or called to transform the controller 190 into a dedicated controller to control the operations of the various chambers / modules described herein. The controller 190 is configured to perform any of the operations described herein. The instructions stored on the memory, when executed, result in the execution of one or more operations (e.g., deposition operations) associated with the processing chamber 100 described herein. The controller 190 and the processing chamber 100 are at least part of a system for processing a substrate.

[0045] Various operations described herein may be automatically performed using the controller 190 , or may be automatically or manually performed with certain operations performed by the user.

[0046] In one or more embodiments, the controller 190 includes a mass storage device, an input control unit, and a display unit. The controller 190 can monitor the temperature of the ring structure 170, the temperature of the substrate 102, the temperature of the substrate support 106, the process gas flow rate, and / or the purge gas flow rate. In one or more embodiments, the controller 190 includes multiple controllers 190, so that the stored readings and calculations and the system model are stored in a controller separate from the controller 190 that controls the operation of the processing chamber 100. In one or more embodiments, all system models and stored readings and calculations are saved in the controller 190.

[0047] The controller 190 is configured to control deposition, cleaning, rotational position, heating, and gas flow through the processing chamber 100 by providing outputs to controls for sensors 195, 196, 198, 199, power supply 173, upper heat source 141, lower heat source 143, process gas source 151, purge gas source 162, motion assembly 121, and / or exhaust pump 157.

[0048] The controller 190 is configured to adjust the output to the control based on the sensor readings, the system model, and the stored readings and calculations. The controller 190 includes embedded software and compensation algorithms to calibrate the measurements. The controller 190 may include one or more machine learning algorithms and / or artificial intelligence algorithms that estimate optimized parameters (e.g., target temperatures of the ring structure 170 and / or substrate 102) for uniformity analysis operations, deposition operations, and / or cleaning operations.

[0049] One or more machine learning algorithms and / or artificial intelligence algorithms may implement, adjust and / or improve the above one or more algorithms, inputs, outputs or variables. Additionally or alternatively, one or more machine learning algorithms and / or artificial intelligence algorithms may rank or prioritize certain aspects of adjustments to the processing chamber 100 and / or method relative to other aspects of the processing chamber 100 and / or method (e.g., method 300). One or more machine learning algorithms and / or artificial intelligence algorithms may take into account other changes within the processing system, such as hardware replacement and / or degradation. In one or more embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms take into account upstream or downstream changes that may occur in the processing system due to various changes to the processing chamber 100 and / or method. For example, if variable "A" is adjusted to cause a change in aspect "B" in the process, and such adjustment inadvertently causes a change in aspect "C" in the process, one or more machine learning algorithms and / or artificial intelligence algorithms may take into account such changes in aspect "C". In such embodiments, one or more machine learning algorithms and / or artificial intelligence algorithms embody predictive aspects associated with implementing the processing chamber 100 and / or method. Predictive aspects may be utilized to proactively mitigate unanticipated changes within the processing system.

[0050] One or more machine learning algorithms and / or artificial intelligence algorithms can estimate optimization parameters using, for example, a regression model (e.g., a linear regression model) or clustering techniques. The algorithm can be unsupervised or supervised. One or more machine learning algorithms and / or artificial intelligence algorithms can optimize, for example, optimization parameters such as target temperature, reading, signal difference, signal distribution, heating power, adjustment factor, threshold ratio, range and / or training range to which the signal difference is compared, cleaning formula and / or treatment formula.

[0051] In one or more embodiments, the controller 190 automatically performs the operations described herein without using one or more machine learning algorithms and / or artificial intelligence algorithms. In one or more embodiments, the controller 190 compares the measured values ​​(e.g., readings and / or signal differences for temperature measurements) with data in a lookup table and / or database to identify settings for one or more heat sources and / or adjust the heating power for the carbon heater 171. The controller 190 can store the measured values ​​as data in the lookup table and / or database.

[0052] Figure 2 According to one or more embodiments Figure 1 Schematic partial top view of the preheating ring 117 and the lower gasket 111 shown in FIG.

[0053] In one or more embodiments, a carbon wire of a carbon heater 171 is disposed (e.g., embedded) in the ring structure 170. In one or more embodiments, the carbon heater 171 includes a carbon wire disposed (e.g., embedded) in a conduit (e.g., a pipe or other structure) disposed in the ring structure 170. The carbon wire and the conduit (if used) include a plurality of arc segments 175a, 175b spaced apart from each other along the radial direction RD1. The carbon wire includes a pair of electrode segments 176a, 176b extending out of the ring structure 170. The conduit (if used) can be disposed to surround the pair of electrode segments 176a, 176b. The pair of electrode segments 176a, 176b extend outward through one or more liners 111, 163 and through the chamber body (e.g., through the flow module 112) to the outside of the processing chamber 100. The ring structure 170 and / or the conduit (if used) surround the carbon wire.

[0054] The ring structure 170 is formed of one or more of: quartz (e.g., transparent quartz or opaque quartz, such as white quartz, gray quartz and / or black quartz), silicon carbide (SiC), graphite (e.g., graphite coated with SiC), or one or more ceramic materials. The one or more ceramic materials may include, for example, aluminum oxide (aluminum oxide (Al2O3)), aluminum nitride (AlN), silicon nitride (SiN, such as Si3N4), boron nitride (BN), and / or boron carbide (B4C)). In one or more embodiments, the ring structure 170 is formed of an opaque material. In one or more embodiments, the ring structure 170 is formed of SiC. The conduit (if used) is formed of one or more of: quartz (e.g., transparent quartz or opaque quartz, such as white quartz, gray quartz and / or black quartz), SiC, graphite (e.g., graphite coated with SiC), or one or more ceramic materials. In one or more embodiments, the conduit is formed of a transparent material. In one or more embodiments, the conduit is formed of transparent quartz and / or one or more ceramic materials. In one or more embodiments, the ring structure 170 includes a complete ring body with an azimuth angle A1 equal to 360 degrees (eg, Figure 2 The present disclosure contemplates that the ring structure 170 may include one or more ring segments (e.g. Figure 4-5 shown).

[0055] Figure 3 According to one or more embodiments Figure 2 A schematic perspective view of the preheating ring 117 is shown in FIG.

[0056] Figure 4is a schematic partial top view of a preheat ring 417 according to one or more embodiments. The preheat ring 417 is similar to the preheat ring 117 and includes one or more aspects, features, components, operations, and / or properties of the preheat ring 117. According to one or more embodiments, the preheat ring 417 may be used instead of Figure 1-3 The preheating ring 117 shown in FIG. The ring structure 470 of the preheating ring 417 includes a notch 473 so that a portion of the protrusion 167 can be seen from a top view, and the preheating ring 417 includes a carbon heater 471. The carbon heater 471 includes a set of tums 475a, 475b located on opposite sides of the notch 473. In one or more embodiments, the ring structure 470 includes a single ring segment having the notch 473. The ring segment of the ring structure 470 has an azimuth angle A2 less than 360 degrees, for example, in the range of 1 degree to 15 degrees.

[0057] The present disclosure contemplates that the notch 473 may be wider and the azimuth angle A2 may be smaller (eg, in the range of 180 to 340 degrees) such that the ring segment is a C-shaped ring.

[0058] Figure 5 is a schematic partial top view of a preheat ring 517 according to one or more embodiments. The preheat ring 517 is similar to the preheat ring 117 and includes one or more aspects, features, components, operations, and / or properties of the preheat ring 117. According to one or more embodiments, the preheat ring 517 may be used instead of Figure 1-3 . The ring structure 570 of the preheating ring 517 includes a plurality of ring segments 575 spaced apart from each other along an arcuate (e.g., circular) profile, and the preheating ring 517 includes a plurality of carbon heaters 571. In one or more embodiments, the carbon heater 571 is coupled to (e.g., embedded in) each ring segment 575. In one or more embodiments, the ring segments 575 each have an azimuth angle A3 less than 360 degrees, for example, less than 90 degrees.

[0059] Figure 6 According to one or more embodiments Figure 1 Schematic partial top view of the processing chamber 100 shown in FIG.

[0060] The processing chamber 100 includes a main injection manifold 610 that supplies one or more process gases P1 and a side injection manifold 620 that supplies one or more second process gases P3. The one or more second process gases P3 may have the same or different composition as the one or more process gases P1. The main injection manifold 610 may be configured to provide a plurality of regions ( Figure 6The present disclosure contemplates that a different number of zones (e.g., one, two, three, four, five, or seven or more) may be used for the main injection manifold 610. The side injection manifold 620 may supply one or more second process gases P3 in multiple zones.

[0061] Figure 7 According to one or more embodiments Figure 1 Schematic perspective view of the auxiliary heat source 194 and the substrate 102 shown in FIG.

[0062] In one or more embodiments, the auxiliary heat source 194 directs light L1 (e.g., laser) toward portions of an outer region (e.g., edge region) of the substrate 102 and / or substrate support 106. The auxiliary heat source 194 may direct the light L1 toward the ring structure 170 of the preheat ring 117. The auxiliary heat source 194 and the carbon heater 171 may be controlled by a controller to correct one or more temperature non-uniformities and / or deposition non-uniformities along the substrate 102. For example, the temperature of an outer region (e.g., edge region) of the substrate 102 may be increased to increase the thickness of a film deposited on the outer region.

[0063] The auxiliary heat source 194 and the carbon heater 171 may be used in conjunction with the main injection manifold 610 and / or the side injection manifold 620. In addition to controlling the auxiliary heat source 194 and / or the carbon heater 171, the controller may also control the composition and / or flow rate of the gas supplied to the region of the main injection manifold 610 and / or the side injection manifold 620 to correct one or more temperature non-uniformities and / or deposition non-uniformities along the substrate 102.

[0064] Benefits of the present disclosure include parameter adjustability (e.g., temperature, gas flow path, gas flow rate, and / or gas pressure) under various operating conditions; reduced temperature non-uniformity; reduced deposition non-uniformity; improved film growth rate (e.g., in outer regions of the substrate); enhanced equipment performance; limited parametric yield; increased chamber component life; reduced cleaning processes; reduced chamber downtime; and increased throughput.

[0065] As an example, the carbon heater of the preheat ring described herein helps to improve temperature uniformity and deposition uniformity of the substrate 102 in a manner that promotes reduced degradation and / or contamination of the preheat ring, substrate support 106 , and / or liner 111 , 163 .

[0066] It should be understood that one or more aspects disclosed herein may be combined. As an example, the processing chamber 100, the controller 190, the substrate support 106, the preheat ring 117, the lower liner 111, the upper liner 163, the preheat ring 417, the preheat ring 517, the main injection manifold 610, the side injection manifold 620, the auxiliary heat source 194 and / or the Figure 1 One or more aspects, features, components, operations and / or properties of the operations described in connection with the deposition operations may be combined. In addition, it is contemplated that one or more aspects disclosed herein may include some or all of the benefits described above.

[0067] While the foregoing is directed to several embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the disclosure is determined by the claims which follow.

Claims

1. A preheating ring suitable for semiconductor manufacturing, the preheating ring comprising: Ring structure; as well as A carbon heater is coupled to the ring structure, the carbon heater having a carbon content of at least 99 atomic percent.

2. The preheating ring of claim 1, wherein the carbon heater comprises a carbon wire disposed in the ring structure or a conduit disposed in the ring structure.

3. The preheat ring of claim 2, wherein the ring structure is formed of one or more of the following materials: quartz, graphite, silicon carbide (SiC), or one or more ceramic materials.

4. The preheating ring of claim 2, wherein the carbon wire comprises a plurality of arc-shaped segments spaced apart from each other along a radial direction.

5. The preheat ring of claim 4, wherein the carbon wire further comprises a pair of electrode segments extending out of the ring structure.

6. The preheating ring of claim 1, wherein the ring structure comprises a complete ring body with an azimuth angle equal to 360 degrees.

7. The preheating ring of claim 1, wherein the ring structure comprises one or more ring segments having an azimuth angle less than 360 degrees.

8. The preheat ring of claim 1, wherein the carbon content is at least 99.999% by atomic percentage.

9. The preheat ring of claim 8, wherein the ring structure is formed of SiC.

10. A heating system suitable for semiconductor manufacturing, the heating system comprising: a ring structure sized and shaped to be disposed in a processing chamber; a carbon heater coupled to the ring structure; as well as A power source is configured to be electrically connected to the carbon heater.

11. The heating system of claim 10, further comprising a controller in communication with the power source.

12. The heating system of claim 11, further comprising a temperature sensor in communication with the controller, the temperature sensor configured to measure a temperature of the ring structure.

13. The heating system of claim 10, wherein the carbon heater comprises a carbon wire disposed in the ring structure or a conduit disposed in the ring structure.

14. The heating system of claim 13, wherein the carbon wire comprises a plurality of arcuate segments spaced apart from each other in a radial direction.

15. The heating system of claim 14, wherein the carbon wire further comprises a pair of electrode segments extending out of the ring structure.

16. The heating system of claim 10, wherein the carbon heater has a carbon content of at least 99.999% by atomic percent.

17. A processing chamber suitable for semiconductor manufacturing, comprising: Chamber body; a window, the chamber body and the window at least partially defining a processing volume; one or more heat sources configured to heat the processing volume; a substrate support disposed in the processing volume; as well as A preheating ring, the preheating ring being at least partially disposed outside the substrate support, the preheating ring comprising: Ring structure, and A carbon heater is coupled to the ring structure.

18. The processing chamber of claim 17, further comprising a liner disposed inside the chamber body, the liner comprising one or more protrusions supporting the preheat ring.

19. The processing chamber of claim 18, wherein the carbon heater comprises a carbon wire disposed in the ring structure or a conduit disposed in the ring structure, and the carbon wire comprises: a plurality of arcuate segments spaced apart from each other in a radial direction; as well as A pair of electrode segments extend out of the ring structure and outwardly through the chamber body.

20. The processing chamber of claim 17, wherein the carbon heater has a carbon content of at least 99.999% by atomic percent.

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