Preparation method and device of silicon-based liquid crystal panel, silicon-based liquid crystal panel and equipment

Abstract

The invention relates to a preparation method and device of a silicon-based liquid crystal panel, the silicon-based liquid crystal panel and equipment. The preparation method comprises the following steps: providing a first substrate and a second substrate; pre-cutting a part of thickness of the first substrate according to the boundary of the segmentation area so as to form a first cutting groove in the first surface of the first substrate; the first surface of the first substrate is attached to the first surface of the second substrate, the pattern, projected to the second substrate, of the first cutting groove serves as the cutting reference of the second substrate, the second surface, away from the transparent conductive film, of the second substrate is cut according to the cutting reference, and a second cutting groove is formed in the second surface of the second substrate; according to the first cutting grooves and the second cutting grooves, the first substrate and the second substrate are subjected to splitting treatment, so that a plurality of independent silicon-based liquid crystal panels are formed. According to the first cutting groove and the second cutting groove, splitting treatment is carried out, the flatness of the cutting face is guaranteed, fragmentation is avoided, and the yield of the silicon-based liquid crystal panel is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor device manufacturing technology, and in particular to a method and device for preparing a silicon-based liquid crystal panel, and a silicon-based liquid crystal panel and equipment. Background Art

[0002] Liquid Crystal on Silicon (LCOS) is a silicon-based micro-display technology that combines CMOS integrated circuit design technology and liquid crystal packaging technology. It has the characteristics of high resolution, high frame rate and low power consumption. In the existing silicon-based liquid crystal chip manufacturing process, the silicon substrate is usually bonded to the glass substrate and then scribing and cutting are carried out in sequence. However, since there is no positioning mark on the back of the silicon substrate, it is necessary to cut through the edge of the silicon substrate while cutting the glass substrate to cut out the alignment reference line for the subsequent positioning and cutting of the silicon substrate. However, in the process of cutting out the alignment reference line, the cooling water of the cutting machine is easy to penetrate into the inside of the silicon-based liquid crystal panel formed by bonding, thereby causing subsequent display abnormalities. In addition, there are measurement and cutting errors in the process of cutting the alignment reference line, which affects the subsequent cutting accuracy of the silicon substrate. Summary of the invention

[0003] Based on this, it is necessary to provide a method and device for preparing a silicon-based liquid crystal panel and a silicon-based liquid crystal panel and equipment to address the above-mentioned problems existing in the prior art.

[0004] In order to achieve the above-mentioned object, the present application provides a method for preparing a liquid crystal on silicon panel, comprising:

[0005] A first substrate and a second substrate are provided, wherein a first surface of the first substrate includes a plurality of segmented regions, a plurality of circuit units are formed in the plurality of segmented regions, and a transparent conductive film is formed on the first surface of the second substrate;

[0006] Pre-cutting a portion of the thickness of the first substrate according to the boundary line of the segmentation area to form a first cutting groove on the first surface of the first substrate;

[0007] Laminating the first surface of the first substrate and the first surface of the second substrate, taking the pattern of the first cutting groove projected on the second substrate as a cutting reference of the second substrate, and cutting the second surface of the second substrate away from the transparent conductive film according to the cutting reference to form a second cutting groove on the second surface of the second substrate;

[0008] The first substrate and the second substrate are split according to the first cutting groove and the second cutting groove to form a plurality of independent liquid crystal on silicon panels.

[0009] In one embodiment, after pre-cutting the first substrate with a partial thickness according to the boundary line of the segmentation area, the method further comprises:

[0010] A sealant is disposed along the edge region of each circuit unit to form a first cavity between the sealant, the first substrate, and the second substrate. The sealant is used to fix the first substrate and the second substrate.

[0011] In one of the embodiments, the frame glue is provided with openings, and the openings of each frame glue are oriented in the same direction; the openings are used to inject liquid crystal to form a liquid crystal layer, so as to obtain a plurality of independent liquid crystal on silicon panels.

[0012] In one embodiment, before forming the second cutting groove, the method further comprises:

[0013] Edge sealing glue is formed on the edge area of ​​the first substrate, so that a second cavity is formed between the first substrate and the second substrate, and the first cavity is located inside the second cavity.

[0014] In one of the embodiments, in the formed LCOS panel, the orthographic projection of the second substrate partially overlaps with the orthographic projection of the first substrate.

[0015] In one embodiment, the thickness of the first substrate is in the range of 0.1 mm to 0.8 mm, and the cutting depth of the first cutting groove is 1 / 8 to 7 / 8 of the thickness of the first substrate.

[0016] In one embodiment, the thickness of the second substrate is in the range of 0.1 mm to 1.1 mm, and the cutting depth of the second cutting groove is 1 / 10 to 9 / 10 of the thickness of the second substrate.

[0017] The present application provides a device for preparing a liquid crystal on silicon panel. The device for preparing a liquid crystal on silicon panel prepares the liquid crystal on silicon panel by using the method for preparing a liquid crystal on silicon panel as described above.

[0018] The present application provides a liquid crystal on silicon panel, which is manufactured by the method for manufacturing a liquid crystal on silicon panel as described above, or by the device for manufacturing a liquid crystal on silicon panel as described above.

[0019] The present application provides a display device, comprising the liquid crystal on silicon panel as described above.

[0020] The above-mentioned preparation method and device of silicon-based liquid crystal panel and silicon-based liquid crystal panel and equipment can improve the cutting accuracy of the first substrate by pre-cutting a part of the thickness of the first substrate along the boundary line of the dividing area before the first substrate and the second substrate are bonded together, thereby avoiding the need to cut out a positioning reference line on the first substrate after bonding for positioning and cutting the first substrate, which affects the cutting accuracy of the first substrate. On the other hand, after the first substrate and the second substrate are bonded together, the pattern projected on the second substrate according to the first cutting groove can be used as the cutting reference of the second substrate, which can not only improve the cutting accuracy of the second substrate, but also make the second cutting groove formed on the second substrate and the first cutting groove formed by pre-cutting of the first substrate consistent. The cutting grooves are on the same cutting plane. After the first cutting groove formed by the first substrate and the second cutting groove formed by the second substrate are aligned and uniformly split, the flatness of the cutting surface of the bonding structure can be guaranteed, and the bonding structure can be prevented from being broken during cutting and the cooling water of the cutting machine can be prevented from easily penetrating into the silicon-based liquid crystal panel formed by bonding, which greatly improves the yield of the silicon-based liquid crystal panel. When the first substrate and the second substrate need to form a staggered structure, the pattern of the first cutting groove projected on the second substrate can be used as the cutting reference of the second substrate, and the cutting position of the second cutting groove can be adjusted. Then, the first substrate and the second substrate can be split, so as to ensure the cutting accuracy and realize a variety of bonding methods. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 This is one of the schematic flow diagrams of a method for preparing a liquid crystal on silicon panel provided in an embodiment;

[0023] Figure 2 A schematic diagram of a structure after a first cutting groove is formed on the first surface of a first substrate provided in an embodiment;

[0024] Figure 3 A schematic diagram of a structure in which a partially cut first substrate and a second substrate are bonded together in one embodiment;

[0025] Figure 4 A schematic structural diagram of a second substrate provided in an embodiment forming a second cutting groove corresponding to the first cutting groove;

[0026] Figure 5 is a schematic structural diagram of a liquid crystal on silicon panel provided in an embodiment;

[0027] Figure 6 It is a schematic structural diagram of a first substrate provided in an embodiment in which a first alignment layer is formed on the first surface;

[0028] Figure 7 It is a schematic structural diagram of a second substrate provided in an embodiment in which a second alignment layer is formed on the first surface thereof;

[0029] Figure 8 It is a structural schematic diagram of a first surface of a first substrate provided in an embodiment having a sealant formed thereon.

[0030] Description of reference numerals:

[0031] The first substrate: 100; the first alignment layer: 101; the first cutting groove: 102; the second substrate: 200; the transparent conductive film: 201; the second alignment layer: 202; the second cutting groove: 203; the frame glue: 300; the liquid crystal layer: 400; the edge sealing glue: 500. DETAILED DESCRIPTION

[0032] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0034] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. At the same time, in this specification, the term "and / or" includes any and all combinations of the relevant listed items.

[0035] See also Figure 1 The present application provides a method for preparing a liquid crystal on silicon panel, comprising steps S102 to S108.

[0036] Step S102: providing a first substrate and a second substrate, wherein a first surface of the first substrate includes a plurality of segmented regions, a plurality of circuit units are formed in the plurality of segmented regions, and a transparent conductive film is formed on the first surface of the second substrate.

[0037] Among them, the first substrate is used as a wafer substrate, and its material can be bulk silicon, silicon carbide, silicon germanium, other compound semiconductor materials heteroepitaxially grown on silicon as a substrate, gallium nitride and cubic boron arsenide, etc. The first substrate has a first surface and a second surface arranged back to back. The first surface of the first substrate can be understood as an upper surface (which can be called the front side of the first substrate), and the second surface of the first substrate can be understood as a lower surface (which can be called the back side of the first substrate). The segmentation area can adopt a standard CMOS process to form a plurality of intersecting segmentation lines on the first surface of the first substrate (the segmentation lines can be actual marking lines or virtual lines) to divide a plurality of array arrangement areas. A circuit unit is arranged in a single block of each array arrangement area, and each circuit unit includes at least a pixel circuit for controlling a liquid crystal display and a peripheral circuit. The peripheral circuit may include a logic circuit, a signal conversion circuit, a timing control circuit, a cache circuit, etc.

[0038] Optionally, an insulating layer can be deposited on the surface of the circuit layer formed by each circuit unit to play an electrical insulating role, and a pixel electrode can also be formed on the surface of the insulating layer, and the circuit unit can be electrically connected to the pixel electrode through a metal plug or a via to transmit the corresponding voltage to the pixel electrode, and then applied to the liquid crystal on the surface of the pixel electrode, so that the liquid crystal deflects, and different voltages affect the intensity of light reflected by the liquid crystal, thereby realizing the display of the signal. In addition, since the circuit unit is made under the pixel electrode, it can avoid electronic components blocking light, so that the pixel electrode can be made very compact, so that the image displayed based on the silicon-based liquid crystal panel can obtain extremely high resolution.

[0039] Furthermore, the second substrate may be a glass cover with good light transmittance, which has a first surface (i.e., upper surface) facing away from the light and a second surface (i.e., lower surface) close to the light, wherein a transparent conductive film is formed on the first surface of the second substrate to serve as a common electrode. Optionally, the transparent conductive film includes but is not limited to at least one of an indium tin oxide (ITO) layer, a silver nanowire layer, and a metal grid layer.

[0040] Step S104: pre-cutting a portion of the thickness of the first substrate according to the boundary line of the segmentation area to form a first cutting groove on the first surface of the first substrate.

[0041] It is understandable that in the existing conventional cutting process, since the materials of the first substrate and the second substrate are different, they need to be cut in a certain order, and since part of the circuit on the first substrate needs to be exposed after cutting, it is impossible to directly cut through the surface of the second substrate close to the light to the product that the two are bonded together. Therefore, the second substrate can only be cut to a certain depth according to the scribe line of the first substrate, but cannot be cut through, and then the first substrate is turned over and cut according to a specific spacing, also cutting to a certain depth but not cutting through, to avoid water entering the bonding inside. Since there is no positioning mark on the back of the first substrate, when cutting the second substrate, it is necessary to cut through the first substrate in the horizontal and vertical directions parallel to the scribe line of the first substrate at the outermost edge (invalid area), and use this as a positioning reference line for subsequent silicon substrate cutting. However, in this process, when the second substrate is cut through the edge of the first substrate for reference positioning, the cooling water of the cutting machine will penetrate into the inside of the bonded product, causing subsequent display abnormalities, and when the second substrate is cut through the edge of the first substrate for reference positioning, the two cut edges will cause the subsequent cutting lines to shift due to factors such as uneven cut marks and measurement errors, thereby resulting in poor cutting accuracy.

[0042] Based on this, please refer to Figure 2 In this embodiment, the first substrate 100 is pre-cut before lamination, and the first substrate 100 is partially cut along the boundary lines of the circuit units on the first surface of the first substrate 100 to form a plurality of first cutting grooves 102 arranged in an array, that is, the first surface of the first substrate 100 is not cut through, so that the depth of the first cutting groove 102 is less than the thickness of the first substrate 100. Therefore, on the basis of maintaining the integrity of the original first substrate 100, not only can the first substrate 100 be accurately cut along the boundary lines to improve the cutting accuracy of the first substrate 100, but it also helps to improve the accuracy of the subsequent alignment of the second substrate, avoiding the need to cut out alignment reference lines on the first substrate 100 after lamination for positioning and cutting of the first substrate 100, which affects the cutting accuracy of the first substrate 100.

[0043] In some embodiments, the thickness of the first substrate 100 may range from 0.1 mm to 0.8 mm, and the cutting depth of the first cutting groove 102 may be between 1 / 8 and 7 / 8 of the thickness of the first substrate 100 , where the cutting depth refers to the dimension of the first cutting groove 102 extending toward the second surface of the first substrate 100 .

[0044] Step S106: The first surface of the first substrate 100 is laminated with the first surface of the second substrate 200, and the pattern of the first cutting groove 102 projected on the second substrate 200 is used as the cutting reference of the second substrate 200. The second surface of the second substrate 200 away from the transparent conductive film 201 is cut according to the cutting reference to form a second cutting groove 203 on the second surface of the second substrate 200. The structure formed in step S106 is as follows: Figure 4 shown.

[0045] It can be understood that after the first substrate 100 and the second substrate 200 are bonded together, the second substrate 200 needs to be cut. Since the second substrate 200 is made of transparent glass, when the surface of the second substrate 200 close to the light is cut, the first cutting groove 102 formed by cutting on the first substrate 100 and the dividing line formed by each circuit unit can be clearly seen. Therefore, the second substrate 200 is partially cut based on the dividing line to improve the cutting precision and alignment accuracy. Only one cutting machine is needed to cut the first substrate 100 and the second substrate 200 made of two materials. Moreover, through the cutting sequence provided in this embodiment, the cooling water used in the cutting process will not penetrate into the interior of the bonded panel.

[0046] In some embodiments, the thickness range of the second substrate 200 can be 0.1mm~1.1mm, and the cutting depth of the second cutting groove 203 can be between 1 / 10~9 / 10 of the thickness of the second substrate 200, where the cutting depth refers to the dimension of the second cutting groove 203 extending toward the first surface of the second substrate 200.

[0047] In the above embodiment, the cutting depth is controlled to ensure the flatness of the device cracks and improve the yield of the liquid crystal on silicon panel.

[0048] Step S108: According to the first cutting groove and the second cutting groove, the first substrate and the second substrate are split to form a plurality of independent LCOS panels. The structure of the independent LCOS panels is as follows: Figure 5 shown.

[0049] Among them, the first cutting groove formed by the first substrate 100 and the second cutting groove formed by the second substrate 200 are aligned to form a unified split to form a plurality of silicon-based liquid crystal panels including a first substrate unit and a second substrate unit, which can ensure the flatness of the cutting surface of the bonding structure and prevent the bonding structure from being broken during cutting.

[0050] In the above example, by pre-cutting a portion of the thickness of the first substrate along the dividing line of the dividing area before the first substrate and the second substrate are bonded together, on the one hand, the cutting accuracy of the first substrate can be improved, avoiding the need to cut out a positioning reference line on the first substrate after bonding for positioning and cutting the first substrate, which affects the cutting accuracy of the first substrate. On the other hand, after the first substrate and the second substrate are bonded together, the pattern projected on the second substrate by the first cutting groove can be used as a cutting reference for the second substrate, which not only improves the cutting accuracy of the second substrate, but also enables the second cutting groove formed on the second substrate and the first cutting groove formed by pre-cutting the first substrate to be on the same cutting plane. After the first cutting groove formed by the first substrate and the second cutting groove formed by the second substrate are aligned and uniformly split, the flatness of the cutting surface of the bonding structure can be guaranteed, and the bonding structure can be prevented from being broken during cutting and the cooling water of the cutting machine can be prevented from easily penetrating into the silicon-based liquid crystal panel formed by bonding, thereby greatly improving the yield of the silicon-based liquid crystal panel. When the first substrate and the second substrate need to form a staggered structure, the pattern of the first cutting groove projected on the second substrate can be used as a cutting reference for the second substrate, and the cutting position of the second cutting groove can be adjusted. After that, the first substrate and the second substrate are split, thereby ensuring the cutting accuracy and realizing a variety of bonding methods.

[0051] In one embodiment, step S104 pre-cuts the first substrate of a certain thickness according to the boundary line of the segmentation area, and further includes the following steps: Figure 6 As shown, a first alignment layer 101 is formed on the first surface of the first substrate 100. The first alignment layer 101 is provided on the surfaces of the plurality of circuit units and other regions of the first surface of the first substrate 100 except the circuit units, and is used to guide the arrangement direction of the liquid crystal molecules. Optionally, the material of the first alignment layer 101 may be a polyimide (PI) layer, a silicon dioxide layer, etc., and the first alignment layer 101 may be aligned by any one of a directional friction method, a UV light alignment method, an ion beam alignment method, and an electron beam coating method, etc., which is not limited in this embodiment.

[0052] In one embodiment, before step S104 pre-cuts the first substrate of a certain thickness according to the boundary line of the segmentation area, the following steps are further included: Figure 7 As shown, the second alignment layer 202 is formed on the surface of the transparent conductive film 201 facing away from the second substrate 200. That is, the surface of the transparent conductive film 201 on the second substrate 200 facing the first substrate covers the second alignment layer 202, and in other embodiments, the first alignment layer is formed on the first surface of the first substrate, and the second alignment layer 202 is formed on the surface of the transparent conductive film 201 facing away from the second substrate 200, that is, the alignment layer 202 is formed on both the upper and lower sides of the liquid crystal, so that the alignment effect of the liquid crystal is better.

[0053] In one embodiment, after step S104 pre-cuts the first substrate of a certain thickness according to the dividing line of the segmentation area, the following steps are further included: Figure 4 and Figure 8 A sealant 300 is disposed along the edge area of ​​each circuit unit to form a first cavity between the sealant 300 , the first substrate 100 , and the second substrate 200 , and the sealant is used to fix the first substrate 100 and the second substrate 200 .

[0054] The frame glue 300 defines a corresponding liquid crystal space on the edge dividing line of each circuit unit. For each silicon-based liquid crystal panel, the liquid crystal can be filled in a first cavity formed by the frame glue 300, the first substrate 100 and the second substrate 200. In addition, the frame glue 300 can be doped with supporting balls or other spacers to support the first cavity (maintain the thickness of the frame glue), thereby controlling the thickness of the liquid crystal, so that the thickness of the liquid crystal at different positions on the silicon-based liquid crystal panel remains consistent.

[0055] Optionally, the material of the frame glue 300 can be UV type glue (mainly composed of acrylic resin), heat curing glue (mainly composed of epoxy resin), or a combination of UV type glue and heat curing glue (mainly composed of a combination of acrylic resin and epoxy resin).

[0056] In one embodiment, Figure 8 As shown, the sealant 300 is provided with openings, and the openings of each sealant 300 are oriented in the same direction. The openings are used to inject liquid crystals to form a liquid crystal layer, so as to obtain a plurality of independent liquid crystal on silicon panels.

[0057] Among them, each frame glue 300 surrounds the circuit unit, and it can be arranged in a rectangular array with openings on the first substrate 100, and combined with reference Figure 5 After the first substrate 100 and the second substrate 200 are bonded and split, a plurality of crystal box units are formed, and the liquid crystal is filled into the first cavity formed by the frame glue 300 through the opening to form a liquid crystal layer 400. The frame glue 300 isolates the liquid crystal molecules from the outside, thereby obtaining a plurality of independent silicon-based liquid crystal panels.

[0058] In one embodiment, before forming the second cutting groove, step S106 further includes the following steps: Figure 8 , an edge sealing glue 500 is formed at the edge area of ​​the first substrate 100, so that a second cavity is formed between the first substrate 100 and the second substrate, and the first cavity is located inside the second cavity.

[0059] It is understandable that, since a sealant 300 with a certain thickness is formed on the first surface of the first substrate 100, there is a gap between the first substrate 100 and the second substrate 200 after being bonded together, before cutting the second substrate 200, an edge sealant 500 can be applied to the periphery of the laminated structure formed by bonding to seal the gap formed between the first substrate 100 and the second substrate 200, so as to prevent moisture from entering the laminated structure during the subsequent cutting process, thereby affecting the display effect of the finished product of the silicon-based liquid crystal panel. Optionally, the material of the edge sealant 500 can be UV glue.

[0060] In one embodiment, the method for preparing the LCOS panel further includes the following step: curing the laminated structure formed by laminating the first substrate and the second substrate.

[0061] Among them, in order to enhance the sealing and reliability of the frame glue of the silicon-based liquid crystal panel to avoid liquid crystal leakage or bubble generation, the frame glue needs to be cured. For example, a surface ultraviolet light source can be used to uniformly irradiate the laminated structure, and a UV mask can be used to irradiate the frame glue area with ultraviolet light, while other areas are protected from ultraviolet light, thereby achieving UV light curing of the frame glue.

[0062] In one embodiment, Figure 5 As shown, in the formed LCOS panel, the orthographic projection of the second substrate 200 partially overlaps with the orthographic projection of the first substrate 100 .

[0063] It can be understood that the multiple independent silicon-based liquid crystal panels formed by splitting the two substrates according to the first cutting groove of the first substrate 100 and the second cutting groove of the second substrate 200 are structures in which the upper and lower substrates are offset and bonded, that is, for each independent silicon-based liquid crystal panel, the second substrate 200 having the transparent conductive film 201 can be used as the upper substrate, and the first substrate 100 having the circuit unit can be used as the lower substrate, and the first cavity surrounded by the frame glue 300 between the two substrates is filled with the liquid crystal layer 400, so that the liquid crystal layer 400 is sandwiched between the two substrates, and the offset portion of the lower substrate that does not overlap with the upper substrate can be connected to the electrode, and the offset portion of the upper substrate that does not overlap with the lower substrate can also be connected to the electrode, that is, at least one open space is formed between the upper substrate and the lower substrate outside the frame glue 300 for connecting the electrode structure.

[0064] In one embodiment, a method for preparing a liquid crystal on silicon panel is provided, comprising steps S201 to S209.

[0065] Step S201: providing a first substrate and a second substrate, wherein a first surface of the first substrate includes a plurality of segmented regions, a plurality of circuit units are formed in the plurality of segmented regions, and a transparent conductive film is formed on the first surface of the second substrate.

[0066] Step S202: forming a first alignment layer on the first surface of the first substrate, and forming a second alignment layer on the surface of the transparent conductive film facing away from the second substrate. Figure 6 FIG. 1 is a schematic structural diagram showing a first substrate 100 having a first alignment layer 101 formed on the first surface thereof. Figure 7 The schematic diagram shows the structure in which the second alignment layer 202 is formed on the surface of the transparent conductive film 201 facing away from the second substrate 200 .

[0067] Step S203: pre-cutting a portion of the thickness of the first substrate according to the boundary line of the segmentation area to form a first cutting groove on the first surface of the first substrate. Figure 2 A schematic structural diagram is shown after the first surface of the first substrate 100 is partially cut to form a first cutting groove 102 .

[0068] Step S204: setting a sealant along the edge area of ​​each circuit unit to form a first cavity between the sealant, the first substrate, and the second substrate, and the sealant is used to fix the first substrate and the second substrate. Figure 8 A schematic structural diagram showing that a sealant is formed on the first surface of the first substrate 100 (ie, the surface of the first alignment layer 101 ).

[0069] Step S205: Laminating the first surface of the first substrate with the first surface of the second substrate, and curing the laminated structure formed by laminating the first substrate and the second substrate. That is, laminating the first alignment layer surface of the first substrate with the second alignment layer surface of the second substrate. Figure 3 A schematic structural diagram showing the bonding of the partially cut first substrate 100 and the second substrate 200 is shown.

[0070] Step S206: forming edge sealing glue at the edge area of ​​the first substrate, so that a second cavity is formed between the first substrate and the second substrate, and the first cavity is located inside the second cavity. Figure 8 A schematic structural diagram showing edge sealing glue formed on the edges of the substrates after the first substrate and the second substrate are bonded together.

[0071] Step S207: Using the pattern of the first cutting groove projected on the second substrate as a cutting reference for the second substrate, cutting the second surface of the second substrate away from the transparent conductive film according to the cutting reference to form a second cutting groove on the second surface of the second substrate. Figure 4 A schematic structural diagram showing a second substrate 200 forming a second cutting groove 203 corresponding to the first cutting groove 102 is shown.

[0072] Step S208: According to the first cutting groove and the second cutting groove, the first substrate and the second substrate are split, and liquid crystal is injected into the openings of each sealant to obtain a plurality of independent silicon-based liquid crystal panels. Figure 5A schematic diagram showing the structure of an independent silicon-based liquid crystal panel formed after crack filling.

[0073] Specifically, the steps in this embodiment are consistent with the definitions of the same steps in the previous embodiments and will not be repeated here. Based on the preparation method of the silicon-based liquid crystal panel provided by the present application, a portion of the thickness of the first substrate is pre-cut to form a first cutting groove before bonding. After bonding, the pattern of the first cutting groove projected on the second substrate is used as the cutting reference of the second substrate. According to the cutting reference, the second substrate is partially cut to form a second cutting groove. According to the first cutting groove of the first substrate and the second cutting groove of the second substrate, a splitting process is performed to form a plurality of independent silicon-based liquid crystal panels, thereby greatly improving the cutting accuracy and cutting yield of the silicon-based liquid crystal panel.

[0074] In one embodiment, a preparation device for a silicon-based liquid crystal panel is provided, comprising a cutting module and a preparation module, wherein the cutting module is used to provide a first substrate and a second substrate, wherein the first surface of the first substrate comprises a plurality of segmented regions, wherein the plurality of segmented regions form a plurality of circuit units, and the first surface of the second substrate forms a transparent conductive film, wherein a portion of the thickness of the first substrate is pre-cut according to the dividing lines of the segmented regions to form a first cutting groove on the first surface of the first substrate, wherein the first surface of the first substrate is bonded to the first surface of the second substrate, wherein the pattern of the first cutting groove projected on the second substrate is used as a cutting reference for the second substrate, and the second surface of the second substrate facing away from the transparent conductive film is cut according to the cutting reference to form a second cutting groove on the second surface of the second substrate. The preparation module is used to perform a splitting process on the first substrate and the second substrate according to the first cutting groove and the second cutting groove to form a plurality of independent silicon-based liquid crystal panels.

[0075] By pre-cutting a portion of the thickness of the first substrate along the dividing line of the dividing area before the first substrate and the second substrate are bonded together, on the one hand, the first surface of the first substrate is not cut through, so that the depth of the first cutting groove is less than the thickness of the first substrate. Therefore, on the basis of maintaining the integrity of the original first substrate, the first substrate can be accurately cut along the dividing line to improve the cutting accuracy of the first substrate, avoiding the need to cut out a positioning reference line on the first substrate after bonding for positioning cutting of the first substrate, which affects the cutting accuracy of the first substrate. On the other hand, after the first substrate and the second substrate are bonded together, the pattern projected on the second substrate by the first cutting groove can be used as a cutting reference for the second substrate, which not only improves the cutting accuracy of the second substrate, but also makes the first substrate more precise. The second cutting groove formed by the second substrate and the first cutting groove formed by pre-cutting the first substrate are on the same cutting plane. After the first cutting groove formed by the first substrate and the second cutting groove formed by the second substrate are aligned and uniformly split, the flatness of the cutting surface of the bonding structure can be guaranteed, and the bonding structure can be prevented from being broken during cutting and the cooling water of the cutting machine can be prevented from easily penetrating into the silicon-based liquid crystal panel formed by bonding, thereby greatly improving the yield of the silicon-based liquid crystal panel. When the first substrate and the second substrate need to form a staggered structure, the pattern of the first cutting groove projected on the second substrate can be used as the cutting reference of the second substrate, and the cutting position of the second cutting groove can be adjusted. Then, the first substrate and the second substrate can be split to ensure cutting accuracy while realizing a variety of bonding methods.

[0076] Among them, the relevant description of the above preparation device can refer to the relevant description in the above embodiment, which will not be repeated here.

[0077] In one embodiment, a silicon-based liquid crystal panel is provided, which is manufactured by the silicon-based liquid crystal panel manufacturing method provided in the above embodiment, or manufactured by the silicon-based liquid crystal panel manufacturing device provided in the above embodiment. Based on the above manufacturing method or manufacturing device, the silicon-based liquid crystal panel of this embodiment has a high yield and excellent display effect.

[0078] In one embodiment, a display device is provided, comprising a liquid crystal on silicon panel as provided in the above embodiment. The display device includes but is not limited to a mobile or fixed terminal such as a projection device, a head-up display (HUD), a wearable device, or a virtual reality device.

[0079] It can be understood that since the display device uses the LCOS panel provided by the above embodiment, when the LCOS panel is higher than the traditional LCOS panel, the image display performance of the corresponding display device is also improved.

[0080] It should be understood that although Figure 1The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 1 At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0081] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0082] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0083] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A method for preparing a liquid crystal on silicon panel, characterized in that: include: A first substrate and a second substrate are provided, wherein a first surface of the first substrate includes a plurality of segmented regions, a plurality of circuit units are formed in the plurality of segmented regions, and a transparent conductive film is formed on the first surface of the second substrate; Pre-cutting a portion of the thickness of the first substrate according to the boundary line of the segmentation area to form a first cutting groove on the first surface of the first substrate; Laminating the first surface of the first substrate and the first surface of the second substrate, taking the pattern of the first cutting groove projected on the second substrate as a cutting reference of the second substrate, and cutting the second surface of the second substrate away from the transparent conductive film according to the cutting reference to form a second cutting groove on the second surface of the second substrate; The first substrate and the second substrate are split according to the first cutting groove and the second cutting groove to form a plurality of independent liquid crystal on silicon panels.

2. The method for preparing a liquid crystal on silicon panel according to claim 1, characterized in that: After pre-cutting the first substrate of a certain thickness according to the boundary line of the segmentation area, the method further includes: A sealant is disposed along the edge region of each circuit unit to form a first cavity between the sealant, the first substrate, and the second substrate. The sealant is used to fix the first substrate and the second substrate.

3. The method for preparing a liquid crystal on silicon panel according to claim 2, characterized in that: The frame glue is provided with openings, and the openings of each frame glue are oriented in the same direction; the openings are used to inject liquid crystals to form a liquid crystal layer, so as to obtain a plurality of independent silicon-based liquid crystal panels.

4. The method for preparing a liquid crystal on silicon panel according to claim 2, characterized in that: Before forming the second cutting groove, the method further comprises: Edge sealing glue is formed on the edge area of ​​the first substrate, so that a second cavity is formed between the first substrate and the second substrate, and the first cavity is located inside the second cavity.

5. The method for preparing a liquid crystal on silicon panel according to claim 1, characterized in that: In the formed LCOS panel, the orthographic projection of the second substrate partially overlaps with the orthographic projection of the first substrate.

6. The method for preparing a liquid crystal on silicon panel according to claim 1, characterized in that: The thickness of the first substrate is in the range of 0.1 mm to 0.8 mm, and the cutting depth of the first cutting groove is 1 / 8 to 7 / 8 of the thickness of the first substrate.

7. The method for preparing a liquid crystal on silicon panel according to claim 1, characterized in that: The thickness of the second substrate is in the range of 0.1 mm to 1.1 mm, and the cutting depth of the second cutting groove is 1 / 10 to 9 / 10 of the thickness of the second substrate.

8. A device for preparing a liquid crystal on silicon panel, characterized in that: The device for preparing a liquid crystal on silicon panel prepares the liquid crystal on silicon panel by using the method for preparing a liquid crystal on silicon panel according to any one of claims 1 to 7.

9. A liquid crystal on silicon panel, characterized in that: The device is manufactured by the method for manufacturing a liquid crystal on silicon panel according to any one of claims 1 to 7, or by the device for manufacturing a liquid crystal on silicon panel according to claim 8.

10. A display device, characterized in that: It comprises the liquid crystal on silicon panel as claimed in claim 9.

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