Novel mask manufacturing method and system using progressive exposure machine

Abstract

The invention discloses a novel mask manufacturing method and system using a progressive exposure machine, and the method comprises the steps: providing a novel mask manufacturing system using the progressive exposure machine, and the novel mask manufacturing system comprises the progressive exposure machine, a main photosensitive spacer and an interference photosensitive spacer; the progressive exposure machine performs full exposure on the first position of the mask to be exposed through the main photosensitive spacer to obtain a first photoresist pattern; the progressive exposure machine performs interference exposure on a second position of the mask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern having a segment difference with the first photoetching machine pattern; and sequentially developing and etching the exposed mask plate to obtain a first mask pattern and a second mask pattern with segment difference, and obtaining an integral mask pattern. And the segment difference of different mask patterns is obtained by utilizing the generated interference light source, so that the problems of high manufacturing cost and long manufacturing period of a mask manufacturing method for obtaining the segment difference by using a progressive exposure machine in the prior art are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of mask manufacturing, and in particular to a novel mask manufacturing method and system using a progressive exposure machine. Background Art

[0002] In the mask process, during the photolithography process, the step difference can help define the graphics more accurately. For example, when making a semiconductor device with a multi-layer structure, the step difference between different layers can clearly distinguish the boundaries of each layer. By precisely controlling the step difference, the resolution of lithography can be effectively improved, which helps to produce smaller and finer chip patterns. For example, in advanced integrated circuit manufacturing, it can achieve smaller size features of more than ten nanometers. Appropriate step differences can also form physical barriers between different material areas. For example, in the field of chip manufacturing, when depositing different metals or semiconductor materials, the step difference can prevent the diffusion of materials between adjacent areas. This isolation can reduce the mixing of impurities and chemical reactions between materials.

[0003] At present, when a progressive exposure machine is used to make masks, a semi-transparent mask production process is generally adopted, which requires a semi-transparent layer with a transmittance of 25%. The step difference is obtained by making a main photosensitive spacer and an auxiliary photosensitive spacer, and setting a semi-transparent layer at the substrate position corresponding to the auxiliary photosensitive spacer.

[0004] However, this mask manufacturing process using a semi-transparent layer to obtain a step difference has high manufacturing costs and a long manufacturing cycle. Summary of the invention

[0005] The prior art method for making a mask using a progressive exposure machine to obtain a step difference has high production cost and a long production cycle.

[0006] In view of the above problems, a new mask production method and system using a progressive exposure machine are proposed. By setting an interference photosensitive spacer to replace the traditional semi-transparent film layer, the photoresist at the corresponding position of the interference light source generated by the spacer is exposed, and the step difference of different mask patterns is also obtained, which greatly simplifies the manufacturing process and solves the problems of high production cost and long production cycle in the prior art of using a progressive exposure machine to obtain the step difference of the mask production method.

[0007] In a first aspect, a novel mask manufacturing method using a progressive exposure machine comprises: Step 100, providing a novel mask manufacturing system using a progressive exposure machine, including a progressive exposure machine, a main photosensitive spacer and an interference photosensitive spacer; Step 200, preparing a mask to be exposed, the progressive exposure machine performs full exposure to a first position of the mask to be exposed through the main photosensitive spacer to obtain a first photoresist pattern; Step 300, the progressive exposure machine performs interference exposure to a second position of the mask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern having a step difference with the first photolithography pattern; Step 400 , developing and etching the exposed mask in sequence to obtain a first mask pattern and a second mask pattern having the step difference, and to obtain an overall mask pattern.

[0008] In conjunction with the novel mask manufacturing method using a progressive exposure machine described in the first aspect of the present invention, in a first possible implementation manner, step 100 includes: Step 110, obtaining a plurality of fully light-transmitting strips of a specified width; Step 120, obtaining a plurality of zero-light-transmittance spacers of a specified width; Step 130: disposing the spacer between the plurality of the fully light-transmitting strips, so that diffracted light is generated when light passes through the fully light-transmitting strips, and the diffracted light interferes in the spacer to obtain the interference photosensitive spacer.

[0009] In conjunction with the novel mask manufacturing method using a progressive exposure machine described in the first aspect of the present invention, in a second possible implementation manner, the step 100 further includes: Step 140, obtaining a light shielding member, and forming strip-shaped light-transmitting areas of a specified width and quantity on the light shielding member; Step 150, forming strip-shaped light-shielding areas of a specified width and number between the strip-shaped light-transmitting areas, so that diffracted light is generated when light passes through the strip-shaped light-transmitting areas, and the diffracted light interferes in the strip-shaped light-shielding areas to obtain the interference photosensitive spacer.

[0010] In combination with the first or second possible implementation manner of the first aspect of the present invention, in a third possible implementation manner, step 200 includes: Step 210: obtaining a substrate, and depositing a light shielding film on the substrate; Step 220: coating photoresist on the light-shielding film to obtain the mask to be exposed.

[0011] In combination with the third possible implementation manner of the first aspect of the present invention, in a fourth possible implementation manner, step 300 includes: Step 310: the progressive exposure machine generates an exposure light source according to set parameters; Step 320, the exposure light source is diffracted and interfered when passing through the interference photosensitive spacer to obtain an interference light source; Step 330 : perform interference exposure on a second position of the mask to be exposed by using the interference light source to obtain a second photoresist pattern having a step difference with the first photoresist pattern.

[0012] In combination with the fourth possible implementation manner of the first aspect of the present invention, in a fifth possible implementation manner, step 400 includes: Step 410, placing the exposed mask into a developer to remove unexposed photoresist; Step 420 , transferring the first photoresist pattern and the second photoresist pattern to the light shielding film respectively by etching to obtain the first mask pattern and the second mask pattern.

[0013] In a second aspect, a novel mask making system comprises: Progressive exposure machine, main photosensitive spacer and interference photosensitive spacer; The progressive exposure machine performs full exposure to the first position of the mask to be exposed through the main photosensitive spacer to obtain a first photoresist pattern, and performs interference exposure to the second position of the mask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern with a step difference from the first photoresist pattern.

[0014] In conjunction with the novel mask manufacturing system described in the second aspect of the present invention, in a first possible implementation manner, the interference photosensitive spacer includes: A plurality of fully light-transmitting strips of a specified width; A plurality of zero light transmission spacers of a specified width; The spacer is arranged between a plurality of the fully light-transmitting strips, so that diffracted light is generated when light passes through the fully light-transmitting strips, and the diffracted light interferes in the spacer to obtain the interference photosensitive spacer.

[0015] In combination with the novel mask manufacturing system described in the second aspect of the present invention, in a second possible implementation manner, the interference photosensitive spacer is formed with strip-shaped light-transmitting areas of a specified width and number; Strip-shaped light-shielding areas of a specified width and number are formed between the strip-shaped light-transmitting areas on the interference photosensitive spacer, so that diffracted light is generated when light passes through the strip-shaped light-transmitting areas, and the diffracted light interferes in the strip-shaped light-shielding areas to obtain the interference photosensitive spacer.

[0016] The novel mask production method and system using a progressive exposure machine described in the present invention is implemented. By setting an interference photosensitive spacer to replace the traditional semi-transparent film layer, the photoresist at the corresponding position of the interference light source generated by the spacer is exposed, and the step difference of different mask patterns is also obtained, which greatly simplifies the manufacturing process and solves the problems of high production cost and long production cycle in the prior art mask production method using a progressive exposure machine to obtain the step difference. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 It is a schematic flow chart of a specific embodiment of a novel mask manufacturing method using a progressive exposure machine in the present application; Figure 2 yes Figure 1 A schematic flow chart of a specific embodiment of step 100; Figure 3 yes Figure 1 Another specific embodiment of step 100 is a flowchart; Figure 4 yes Figure 1 A schematic flow chart of a specific embodiment of step 200; Figure 5 yes Figure 1 A schematic flow chart of a specific embodiment of step 300; Figure 6 yes Figure 1 A schematic flow chart of a specific embodiment of step 500; Figure 7 It is a schematic diagram of the structure of a new mask manufacturing system using a progressive exposure machine in the prior art; Figure 8 It is a schematic diagram of the structural composition of a new mask manufacturing system using a progressive exposure machine in the present application. DETAILED DESCRIPTION

[0019] The following will be combined with the accompanying drawings in the invention to clearly and completely describe the technical solutions in the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, other embodiments obtained by ordinary technicians in this field without creative work are all within the scope of protection of the present invention.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0021] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0022] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0023] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0024] The prior art method for making a mask using a progressive exposure machine to obtain a step difference has high production cost and a long production cycle.

[0025] In view of the above problems, a novel mask manufacturing method and system using a progressive exposure machine are proposed.

[0026] In the first aspect, a novel mask manufacturing method using a progressive exposure machine, such as Figure 1 , Figure 1 This is a schematic flow chart of a specific embodiment of a novel mask manufacturing method using a progressive exposure machine in the present application; it includes: Step 100: Provide a novel mask manufacturing system using a progressive exposure machine, including a progressive exposure machine, a main photosensitive spacer and an interference photosensitive spacer.

[0027] In the novel mask manufacturing system of this embodiment, interference photosensitive spacers are manufactured to replace the traditional semi-transparent film layer. Specifically, Figure 2 , Figure 2 yes Figure 1A flow chart of a specific embodiment of step 100; step 100 includes: step 110, obtaining a plurality of fully light-transmitting strips of specified width; step 120, obtaining a plurality of zero-light-transmitting spacers of specified width; step 130, arranging the spacers between the plurality of fully light-transmitting strips so that diffracted light is generated when light passes through the fully light-transmitting strips, and the diffracted light interferes at the spacers to obtain interference-sensitive spacers.

[0028] In a specific embodiment, the number of fully light-transmitting strips can be three, with a strip width of 2.6um (100% light transmittance), and the number of spacers between the fully light-transmitting strips is two, with a width of 7um (light-shielding area, transmittance 0%). The diffraction generated when light passes through a gap of 2.6um is used, and the diffracted light generated by the three fully light-transmitting strips interferes at the light-shielding position of the spacer with a width of 7um, thereby producing an exposure effect. This design is paired with a Hitachi proximity exposure machine, with an exposure light product of 80mj and an exposure Gap of 120um. A PS step difference of 0.45um can be obtained. If you want to get a different step difference, you need to adjust the exposure light product and exposure Gap.

[0029] In another specific embodiment, Figure 3 , Figure 3 yes Figure 1 Another specific embodiment of step 100 is a flow chart of a specific embodiment; step 100 also includes: step 140, obtaining a light shielding member, and forming a strip light-transmitting area of ​​a specified width and number on the light shielding member; step 150, forming a strip light-shielding area of ​​a specified width and number between the strip light-transmitting areas, so that when light passes through the strip light-transmitting area, diffracted light is generated, and the diffracted light interferes in the strip light-shielding area to obtain an interference photosensitive spacer. In this embodiment, the strip light-transmitting area in the light shielding member is integrally formed with the strip light-shielding area, the width of the strip light-transmitting area can be 2.6um (100% light-transmitting), the number is three, the number of the strip light-shielding area is two, the width is 7um, and the diffraction generated when the light passes through the 2.6um strip light-transmitting area is used. The diffracted light generated by the three strip light-transmitting areas interferes at the light-shielding position of the 7um strip light-shielding area, thereby also producing an exposure effect at the 7um light-shielding position. With a Hitachi proximity exposure machine, the exposure light product is 80mj and the exposure gap is 120um. The PS step difference can be 0.45um. If you want to get a different step difference, you need to adjust the exposure light volume and exposure gap.

[0030] Step 200 , preparing a mask to be exposed, and using a progressive exposure machine to fully expose a first position of the mask to be exposed through a main photosensitive spacer to obtain a first photoresist pattern.

[0031] When making the mask to be exposed, Figure 4 , Figure 4 yes Figure 1A schematic flow chart of a specific embodiment of step 200; step 200 comprises: step 210, obtaining a substrate, and depositing a light-shielding film on the substrate; step 220, coating a photoresist on the light-shielding film, and obtaining a mask to be exposed.

[0032] Step 300: The progressive exposure machine performs interference exposure on the second position of the mask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern having a step difference with the first photolithography pattern. Figure 5 , Figure 5 yes Figure 1 A flow chart of a specific embodiment of step 300; step 300 includes: step 310, a progressive exposure machine generates an exposure light source according to set parameters; step 320, the exposure light source diffracts and interferes when passing through an interference photosensitive spacer to obtain an interference light source; step 330, using the interference light source to perform interference exposure on a second position of the mask to be exposed to obtain a second photoresist pattern having a step difference with the first photoresist pattern.

[0033] In this embodiment, a second photoresist pattern having a step difference with the first photoresist pattern is generated by interference exposure. An interference photosensitive spacer is provided to replace the traditional semi-transparent film layer, and the photoresist corresponding to the interference light source generated by the spacer is exposed to obtain step differences of different mask patterns. This greatly simplifies the manufacturing process and solves the problem of high manufacturing cost and long manufacturing cycle in the prior art of using a progressive exposure machine to obtain step differences in mask manufacturing methods. Figure 7 and Figure 8 , Figure 7 This is a schematic diagram of the structure of a new mask manufacturing system using a progressive exposure machine in the prior art. Figure 8 It is a schematic diagram of the structural composition of a new mask manufacturing system using a progressive exposure machine in the present application.

[0034] exist Figure 7 In the MPS, the main photosensitive spacer, the SPS is the auxiliary photosensitive spacer, and the light shielding film is made of chromium. Figure 8 In the embodiment, an interference photosensitive spacer consisting of three fully light-transmitting strips with a width of 2.6 μm and two spacer strips with a width of 7 μm is used.

[0035] As shown in the mask manufacturing process comparison table in Table 1, compared with the traditional mask manufacturing process, the present application simplifies the process by half, greatly reduces the cost, and shortens the manufacturing cycle.

[0036] Table 1 Mask production process comparison table Original mask production process New mask production process 1 SPT (deposited Cr) SPT (deposited Cr) 2 Coating (photoresist coating) Coating (photoresist coating) 3 Writing(Laser engraving pattern) Writing(laser engraving pattern) 4 Develop Develop 5 Etching Etching 6 Strip Strip 7 HT SPT (Deposited Semi-Permeable Layer) 8 Coating (photoresist coating) 9 Writing(laser engraving pattern) 10 Develop 11 Etching 12 Strip Step 400: Develop and etch the exposed mask in sequence to obtain a first mask pattern and a second mask pattern with a step difference, thereby obtaining an overall mask pattern.

[0037] In one embodiment, Figure 6 , Figure 6 yes Figure 1 A flow chart of a specific embodiment of step 500; step 400 includes: step 410, placing the exposed mask into a developer to remove unexposed photoresist; step 420, transferring the first photoresist pattern and the second photoresist pattern to the shading film by etching, respectively, to obtain a first mask pattern and a second mask pattern.

[0038] In a second aspect, a novel mask making system comprises: Progressive exposure machine, main photosensitive spacer and interference photosensitive spacer; The progressive exposure machine performs full exposure to the first position of the mask to be exposed through the main photosensitive spacer to obtain a first photoresist pattern, and performs interference exposure to the second position of the mask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern with a step difference from the first photoresist pattern.

[0039] In conjunction with the novel mask manufacturing system of the second aspect of the present invention, in a first possible implementation manner, the interference photosensitive spacer includes: A plurality of fully light-transmitting strips of a specified width; A plurality of zero light transmission spacers of a specified width; The spacers are arranged between a plurality of fully light-transmitting strips, so that diffracted light is generated when light passes through the fully light-transmitting strips, and the diffracted light is interfered in the spacers to obtain interference-sensitive spacers.

[0040] In combination with the novel mask manufacturing system of the second aspect of the present invention, in a second possible implementation manner, strip-shaped light-transmitting areas of a specified width and number are formed on the interference photosensitive spacer; Strip-shaped light-shielding areas of specified width and quantity are formed between the strip-shaped light-transmitting areas on the interference photosensitive spacer, so that diffracted light is generated when light passes through the strip-shaped light-transmitting areas, and the diffracted light interferes in the strip-shaped light-shielding areas to obtain the interference photosensitive spacer.

[0041] The present invention implements a novel mask production method and system using a progressive exposure machine, which replaces the traditional semi-transparent film layer by setting an interference photosensitive spacer, and uses the interference light source generated by the spacer to expose the photoresist at the corresponding position, thereby obtaining the step difference of different mask patterns. This greatly simplifies the manufacturing process and solves the problems of high production cost and long production cycle in the prior art of using a progressive exposure machine to obtain the step difference of the mask production method.

[0042] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A novel mask manufacturing method using a progressive exposure machine, characterized in that: include: Step 100, providing a novel mask manufacturing system using a progressive exposure machine, including a progressive exposure machine, a main photosensitive spacer and an interference photosensitive spacer; Step 200, preparing a mask to be exposed, the progressive exposure machine performs full exposure to a first position of the mask to be exposed through the main photosensitive spacer to obtain a first photoresist pattern; Step 300, the progressive exposure machine performs interference exposure to a second position of the mask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern having a step difference with the first photolithography pattern; Step 400 , developing and etching the exposed mask in sequence to obtain a first mask pattern and a second mask pattern having the step difference, and to obtain an overall mask pattern.

2. The novel mask manufacturing method using a progressive exposure machine according to claim 1, characterized in that: The step 100 comprises: Step 110, obtaining a plurality of fully light-transmitting strips of a specified width; Step 120, obtaining a plurality of zero-light-transmittance spacers of a specified width; Step 130: disposing the spacer between the plurality of the fully light-transmitting strips, so that diffracted light is generated when light passes through the fully light-transmitting strips, and the diffracted light interferes in the spacer to obtain the interference photosensitive spacer.

3. The novel mask manufacturing method using a progressive exposure machine according to claim 1, characterized in that: The step 100 further includes: Step 140, obtaining a light shielding member, and forming strip-shaped light-transmitting areas of a specified width and quantity on the light shielding member; Step 150, forming strip-shaped light-shielding areas of a specified width and number between the strip-shaped light-transmitting areas, so that diffracted light is generated when light passes through the strip-shaped light-transmitting areas, and the diffracted light interferes in the strip-shaped light-shielding areas to obtain the interference photosensitive spacer.

4. The novel mask manufacturing method using a progressive exposure machine according to claim 2 or 3, characterized in that: The step 200 comprises: Step 210: obtaining a substrate, and depositing a light shielding film on the substrate; Step 220: coating photoresist on the light-shielding film to obtain the mask to be exposed.

5. The novel mask manufacturing method using a progressive exposure machine according to claim 4, characterized in that: The step 300 includes: Step 310: the progressive exposure machine generates an exposure light source according to set parameters; Step 320, the exposure light source is diffracted and interfered when passing through the interference photosensitive spacer to obtain an interference light source; Step 330 : perform interference exposure on a second position of the mask to be exposed by using the interference light source to obtain a second photoresist pattern having a step difference with the first photoresist pattern.

6. The novel mask manufacturing method using a progressive exposure machine according to claim 5, characterized in that: The step 400 includes: Step 410, placing the exposed mask into a developer to remove unexposed photoresist; Step 420 , transferring the first photoresist pattern and the second photoresist pattern to the light shielding film respectively by etching to obtain the first mask pattern and the second mask pattern.

7. A novel mask manufacturing system, using the novel mask manufacturing method using a progressive exposure machine as claimed in any one of claims 1 to 6, characterized in that: include: Progressive exposure machine, main photosensitive spacer and interference photosensitive spacer; The progressive exposure machine performs full exposure to the first position of the mask to be exposed through the main photosensitive spacer to obtain a first photoresist pattern, and performs interference exposure to the second position of the mask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern with a step difference from the first photoresist pattern.

8. The novel mask manufacturing system using a progressive exposure machine according to claim 7, characterized in that: The interference photosensitive spacer comprises: A plurality of fully light-transmitting strips of a specified width; A plurality of zero light transmission spacers of a specified width; The spacer is arranged between a plurality of the fully light-transmitting strips, so that diffracted light is generated when light passes through the fully light-transmitting strips, and the diffracted light interferes in the spacer to obtain the interference photosensitive spacer.

9. The novel mask manufacturing system using a progressive exposure machine according to claim 7, characterized in that: The interference photosensitive spacer is formed with strip-shaped light-transmitting areas of a specified width and number; Strip-shaped light-shielding areas of a specified width and number are formed between the strip-shaped light-transmitting areas on the interference photosensitive spacer, so that diffracted light is generated when light passes through the strip-shaped light-transmitting areas, and the diffracted light interferes in the strip-shaped light-shielding areas to obtain the interference photosensitive spacer.

10. The novel mask manufacturing system using a progressive exposure machine according to claim 8, characterized in that: The width of the full light-transmitting strip is 2.6 μm, and the width of the zero light-transmitting spacer is 7 μm.

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