A novel mask production method and system using a progressive exposure machine

Abstract

This invention discloses a novel mask fabrication method and system using a progressive exposure machine. The method includes providing a novel mask fabrication system using a progressive exposure machine, comprising a progressive exposure machine, a main photosensitive spacer, and an interference photosensitive spacer. The progressive exposure machine performs full exposure on a first position of the mask to be exposed through the main photosensitive spacer to obtain a first photoresist pattern. The progressive exposure machine performs interference exposure on a second position of the mask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern with a step difference from the first photoresist pattern. The exposed mask is then sequentially developed and etched to obtain the first mask pattern and the second mask pattern with step differences, thus obtaining the overall mask pattern. By utilizing the generated interference light source to obtain the step differences of different mask patterns, this method solves the problems of high manufacturing cost and long manufacturing cycle in existing mask fabrication methods that use progressive exposure machines to obtain step differences.

Description

Technical Field

[0001] This invention relates to the field of mask fabrication technology, and in particular to a novel mask fabrication method and system using a progressive exposure machine. Background Technology

[0002] In masking processes, step spacing during photolithography helps define patterns more precisely. For example, when fabricating semiconductor devices with multilayer structures, step spacing between different layers clearly distinguishes the boundaries of each layer. By precisely controlling step spacing, the resolution of photolithography can be effectively improved, facilitating the fabrication of smaller, more refined chip patterns. In advanced integrated circuit manufacturing, for instance, it enables the achievement of smaller feature sizes, ranging from tens of nanometers. Appropriate step spacing can also create physical barriers between different material regions. For example, in chip manufacturing, when depositing different metals or semiconductor materials, step spacing prevents material diffusion between adjacent areas. This isolation reduces impurity intrusion and chemical reactions between materials.

[0003] Currently, when using a progressive exposure machine to make masks, a semi-transparent mask manufacturing process is generally adopted, which requires a semi-transparent layer with a transmittance of 25%. By making a main photosensitive spacer and an auxiliary photosensitive spacer, and setting a semi-transparent layer at the substrate position of the corresponding auxiliary photosensitive spacer, the step difference is obtained.

[0004] However, this mask manufacturing process, which uses a semi-permeable layer to obtain step differences, has high manufacturing costs and a long production cycle. Summary of the Invention

[0005] The existing mask fabrication method using a progressive exposure machine to obtain step differences has high production costs and long production cycles.

[0006] To address the aforementioned issues, a novel mask fabrication method and system using a progressive exposure machine is proposed. By setting an interference-sensitive spacer instead of the traditional semi-transparent film layer, and using the photoresist at the corresponding position of the interference light source generated by the spacer for exposure, different mask patterns with step differences are obtained. This greatly simplifies the manufacturing process and solves the problems of high manufacturing cost and long manufacturing cycle in existing mask fabrication methods that use progressive exposure machines to obtain step differences.

[0007] In a first aspect, a novel mask fabrication method using a progressive exposure machine includes:

[0008] Step 100: A novel mask fabrication system using a progressive exposure machine is provided, including a progressive exposure machine, a main photosensitive spacer, and an interference photosensitive spacer;

[0009] Step 200: Fabricate the photomask to be exposed. The progressive exposure machine fully exposes the first position of the photomask to be exposed through the main photosensitive spacer to obtain the first photoresist pattern.

[0010] Step 300: The progressive exposure machine performs interference exposure on the second position of the mask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern with a step difference from the first photolithography pattern.

[0011] Step 400: The exposed mask is developed and etched sequentially to obtain the first mask pattern and the second mask pattern with the aforementioned step difference, and the overall mask pattern is obtained.

[0012] In conjunction with the novel mask fabrication method using a progressive exposure machine described in the first aspect of the present invention, in a first possible embodiment, step 100 includes:

[0013] Step 110: Obtain multiple fully transparent strips of specified width;

[0014] Step 120: Obtain multiple zero-transmittance spacers of specified width;

[0015] Step 130: The spacer is placed between the plurality of fully transparent strips, so that when light passes through the fully transparent strips, diffracted light is generated, and the diffracted light is interfered with by the spacer to obtain the interference photosensitive spacer.

[0016] In conjunction with the novel mask fabrication method using a progressive exposure machine described in the first aspect of the present invention, in a second possible embodiment, step 100 further includes:

[0017] Step 140: Obtain a light-shielding component and form strip-shaped light-transmitting areas of a specified width and number on the light-shielding component;

[0018] Step 150: Form strip-shaped light-blocking areas of a specified width and number between the strip-shaped light-transmitting areas, so that when light passes through the strip-shaped light-transmitting areas, diffracted light is generated, and the diffracted light is interfered in the strip-shaped light-blocking areas to obtain the interference photosensitive spacer.

[0019] In conjunction with the first or second possible implementation of the first aspect of the present invention, in a third possible implementation, step 200 includes:

[0020] Step 210: Obtain a substrate and deposit a light-shielding film on the substrate;

[0021] Step 220: Coat the light-shielding film with photoresist to obtain the photomask to be exposed.

[0022] In conjunction with the third possible implementation of the first aspect of the present invention, in the fourth possible implementation, step 300 includes:

[0023] Step 310: The progressive exposure machine generates an exposure light source according to the set parameters;

[0024] Step 320: When the exposure light source passes through the interference photosensitive spacer, it undergoes diffraction and interference to obtain an interference light source;

[0025] Step 330: Use the interference light source to perform interference exposure on the second position of the mask to be exposed, and obtain a second photoresist pattern with a step difference from the first photoresist pattern.

[0026] In conjunction with the fourth possible implementation of the first aspect of the present invention, in the fifth possible implementation, step 400 includes:

[0027] Step 410: Place the exposed photomask into the developing solution to remove the unexposed photoresist;

[0028] Step 420: The first photoresist pattern and the second photoresist pattern are transferred onto the light-shielding film by etching to obtain the first mask pattern and the second mask pattern.

[0029] Secondly, a novel mask fabrication system includes:

[0030] Progressive exposure machine, main photosensitive spacer and interference photosensitive spacer;

[0031] The progressive exposure machine performs full exposure on a first position of the photomask to be exposed through the main photosensitive spacer to obtain a first photoresist pattern, and performs interference exposure on a second position of the photomask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern with a step difference from the first photoresist pattern.

[0032] In conjunction with the novel mask fabrication system described in the second aspect of the present invention, in a first possible embodiment, the interference photosensitive spacer includes:

[0033] Multiple fully transparent strips of specified width;

[0034] Multiple zero-transmittance spacers of specified width;

[0035] The spacer is disposed between the plurality of fully transparent strips, so that when light passes through the fully transparent strips, diffracted light is generated, and the diffracted light interferes with the spacer to obtain the interference photosensitive spacer.

[0036] In conjunction with the novel mask fabrication system described in the second aspect of the present invention, in a second possible embodiment, the interference photosensitive spacer is formed with strip-shaped light-transmitting areas of a specified width and number;

[0037] Between the strip-shaped light-transmitting areas on the interference photosensitive spacer, strip-shaped light-blocking areas of a specified width and number are also formed, so that when light passes through the strip-shaped light-transmitting areas, diffracted light is generated, and the diffracted light interferes in the strip-shaped light-blocking areas to obtain the interference photosensitive spacer.

[0038] The present invention discloses a novel mask fabrication method and system using a progressive exposure machine. By setting an interference photosensitive spacer instead of a traditional semi-transparent film layer, and using the photoresist at the corresponding position of the interference light source generated by the spacer for exposure, different mask patterns can be obtained. This greatly simplifies the manufacturing process and solves the problems of high manufacturing cost and long manufacturing cycle of existing mask fabrication methods that use progressive exposure machines to obtain step differences. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 This is a schematic flowchart of a specific embodiment of a novel mask fabrication method using a progressive exposure machine according to this application;

[0041] Figure 2 yes Figure 1 A schematic diagram of a specific embodiment of step 100;

[0042] Figure 3 yes Figure 1 A schematic diagram of another specific embodiment of step 100;

[0043] Figure 4 yes Figure 1 A flowchart illustrating a specific embodiment of step 200;

[0044] Figure 5 yes Figure 1 A flowchart illustrating a specific embodiment of step 300;

[0045] Figure 6 yes Figure 1 A flowchart illustrating a specific embodiment of step 500;

[0046] Figure 7This is a schematic diagram of the structural composition of a novel mask fabrication system using a progressive exposure machine in the prior art;

[0047] Figure 8 This is a schematic diagram of the structural composition of a novel mask fabrication system using a progressive exposure machine, as described in this application. Detailed Implementation

[0048] The technical solutions of this invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are all within the scope of protection of this invention.

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the specification of this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0050] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0051] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0052] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0053] The existing mask fabrication method using a progressive exposure machine to obtain step differences has high production costs and long production cycles.

[0054] To address the above problems, a novel mask fabrication method and system using a progressive exposure machine is proposed.

[0055] Firstly, a novel mask fabrication method using a progressive exposure machine, such as... Figure 1 , Figure 1 This is a schematic flowchart of a specific embodiment of a novel mask fabrication method using a progressive exposure machine according to this application; including:

[0056] Step 100: A novel mask fabrication system using a progressive exposure machine is provided, including a progressive exposure machine, a main photosensitive spacer, and an interference photosensitive spacer.

[0057] In the novel mask fabrication system of this embodiment, interference photosensitive spacers are fabricated to replace the traditional semi-permeable film layer. Specifically, for example... Figure 2 , Figure 2 yes Figure 1 A schematic flowchart of a specific embodiment of step 100; step 100 includes: step 110, obtaining multiple fully transparent strips of a specified width; step 120, obtaining multiple zero-transparency spacers of a specified width; step 130, placing the spacers between the multiple fully transparent strips, so that when light passes through the fully transparent strips, diffracted light is generated, and the diffracted light interferes with the spacers to obtain interference photosensitive spacers.

[0058] In one specific embodiment, there can be three fully transparent strips, each 2.6µm wide (100% transparent), and two spacers between them, each 7µm wide (shading area, 0% transmittance). The diffraction that occurs when light passes through the 2.6µm gap is utilized. The diffracted light from the three fully transparent strips interferes with the shading area of ​​the 7µm wide spacers, thus creating the exposure effect. This design, paired with a Hitachi proximity exposure unit, achieves an exposure volume of 80mJ and an exposure gap of 120µm, yielding a PS step difference of 0.45µm. To obtain different steps, the exposure volume and exposure gap need to be adjusted.

[0059] In another specific embodiment, such as Figure 3 , Figure 3 yes Figure 1A schematic diagram of another specific embodiment of step 100; step 100 further includes: step 140, obtaining a light-shielding component, and forming strip-shaped light-transmitting areas of a specified width and number on the light-shielding component; step 150, forming strip-shaped light-shielding areas of a specified width and number between the strip-shaped light-transmitting areas, so that diffracted light is generated when light passes through the strip-shaped light-transmitting areas, and the diffracted light interferes in the strip-shaped light-shielding areas to obtain an interference photosensitive spacer. In this embodiment, the strip-shaped light-transmitting areas in the light-shielding component are integrally formed with the strip-shaped light-shielding areas. The width of the strip-shaped light-transmitting areas can be 2.6µm (100% light transmittance), and the number is three. The number of strip-shaped light-shielding areas is two, and the width is 7µm. Diffraction is generated when light passes through the 2.6µm strip-shaped light-transmitting areas. The diffracted light generated by the three strip-shaped light-transmitting areas interferes at the light-shielding position of the 7µm strip-shaped light-shielding area, thereby producing an exposure effect at the 7µm light-shielding position. When paired with a Hitachi proximity exposure machine, the exposure light accumulation is 80mJ, and the exposure gap is 120µm. A PS step difference of 0.45µm can be obtained. To obtain different step differences, the exposure amount and exposure gap need to be adjusted.

[0060] Step 200: Create the photomask to be exposed. The progressive exposure machine fully exposes the first position of the photomask to be exposed through the main photosensitive spacer to obtain the first photoresist pattern.

[0061] When creating the photomask to be exposed, such as Figure 4 , Figure 4 yes Figure 1 A schematic diagram of a specific embodiment of step 200; step 200 includes: step 210, obtaining a substrate and depositing a light-shielding film on the substrate; step 220, coating photoresist on the light-shielding film to obtain a mask to be exposed.

[0062] Step 300: The progressive exposure machine performs interference exposure on the second position of the photomask to be exposed through an interference photosensitive spacer, obtaining a second photoresist pattern with a step difference from the first photolithography pattern. For example... Figure 5 , Figure 5 yes Figure 1 A schematic diagram of a specific embodiment of step 300; step 300 includes: step 310, a progressive exposure machine generates an exposure light source according to set parameters; step 320, the exposure light source undergoes diffraction and interference when passing through the interference photosensitive spacer to obtain an interference light source; step 330, the interference light source is used to perform interference exposure on the second position of the mask to be exposed to obtain a second photoresist pattern with a step difference from the first photoresist pattern.

[0063] In this embodiment, a second photoresist pattern with a step difference from the first photoresist pattern is generated through interference exposure. By setting an interference-sensitive spacer instead of a traditional semi-transparent film layer, and using the photoresist at the corresponding position of the interference light source generated by the spacer for exposure, the step difference of different mask patterns is also obtained, which greatly simplifies the manufacturing process and solves the problems of high manufacturing cost and long manufacturing cycle of the existing mask fabrication method that uses a progressive exposure machine to obtain the step difference. Figure 7 and Figure 8 , Figure 7 This is a schematic diagram of the structural composition of a novel mask fabrication system using a progressive exposure machine in the prior art. Figure 8 This is a schematic diagram of the structural composition of a novel mask fabrication system using a progressive exposure machine, as described in this application.

[0064] exist Figure 7 In this design, MPS is the primary photosensitive spacer, SPS is the auxiliary photosensitive spacer, and the light-shielding film is made of chromium. Figure 8 In the process, an interference photosensitive spacer is constructed using three fully transparent strips with a width of 2.6 μm and two spacer strips with a width of 7 μm.

[0065] As shown in Table 1, the mask manufacturing process comparison table shows that this application simplifies the process by half compared to the traditional mask manufacturing process, greatly reducing costs and shortening the manufacturing cycle.

[0066] Table 1 Comparison of Mask Fabrication Processes

[0067] Original mask manufacturing process New mask manufacturing process 1 SPT (deposited Cr) SPT (deposited Cr) 2 Coating (applying photoresist) Coating (applying photoresist) 3 Laser engraving (writing pattern) Laser engraving (writing pattern) 4 Develop Develop 5 Etching Etching 6 Strip (removal of film) Strip (removal of film) 7 HT SPT (Deposited Semi-Permeable Layer) 8 Coating (applying photoresist) 9 Laser engraving (writing pattern) 10 Develop 11 Etching 12 Strip (removal of film)

[0068] Step 400: The exposed mask is developed and etched sequentially to obtain the first mask pattern and the second mask pattern with step differences, and the overall mask pattern is obtained.

[0069] In one embodiment, such as Figure 6 , Figure 6 yes Figure 1 A schematic flowchart of a specific embodiment of step 500; step 400 includes: step 410, placing the exposed photomask into the developer to remove the unexposed photoresist; step 420, transferring the first photoresist pattern and the second photoresist pattern onto the light-shielding film by etching, to obtain the first photomask pattern and the second photomask pattern.

[0070] Secondly, a novel mask fabrication system includes:

[0071] Progressive exposure machine, main photosensitive spacer and interference photosensitive spacer;

[0072] The progressive exposure machine performs full exposure on a first position of the photomask to be exposed through a main photosensitive spacer to obtain a first photoresist pattern, and performs interference exposure on a second position of the photomask to be exposed through an interference photosensitive spacer to obtain a second photoresist pattern with a step difference from the first photoresist pattern.

[0073] In conjunction with the novel mask fabrication system of the second aspect of the present invention, in a first possible embodiment, the interference photosensitive spacer includes:

[0074] Multiple fully transparent strips of specified width;

[0075] Multiple zero-transmittance spacers of specified width;

[0076] Spacers are placed between multiple fully transparent strips, so that when light passes through the fully transparent strips, diffracted light is generated, and the diffracted light interferes with the spacers, resulting in interference photosensitive spacers.

[0077] In conjunction with the novel mask fabrication system of the second aspect of the present invention, in a second possible embodiment, strip-shaped light-transmitting areas of a specified width and number are formed on the interference photosensitive spacer;

[0078] Between the strip-shaped light-transmitting areas on the interference photosensitive spacer, there are also strip-shaped light-blocking areas of a specified width and number, so that when light passes through the strip-shaped light-transmitting areas, diffracted light is generated, and the diffracted light interferes in the strip-shaped light-blocking areas, thus obtaining the interference photosensitive spacer.

[0079] This invention discloses a novel mask fabrication method and system using a progressive exposure machine. By setting an interference photosensitive spacer instead of a traditional semi-transparent film layer, and using the photoresist at the corresponding position of the interference light source generated by the spacer for exposure, different mask patterns can be obtained. This greatly simplifies the manufacturing process and solves the problems of high manufacturing cost and long manufacturing cycle in the existing mask fabrication method that uses a progressive exposure machine to obtain the step difference.

[0080] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for mask fabrication using a progressive exposure machine, characterized in that, include: Step 100: A mask fabrication system using a progressive exposure machine is provided, including a progressive exposure machine, a main photosensitive spacer, and an interference photosensitive spacer; Step 200: Fabricate the photomask to be exposed. The progressive exposure machine fully exposes the first position of the photomask to be exposed through the main photosensitive spacer to obtain the first photoresist pattern. Step 300: The progressive exposure machine performs interference exposure on the second position of the photomask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern with a step difference from the first photoresist pattern. Step 400: The exposed mask is developed and etched sequentially to obtain the first mask pattern and the second mask pattern with the aforementioned step difference, and the overall mask pattern is obtained.

2. The mask fabrication method using a progressive exposure machine according to claim 1, characterized in that, Step 100 includes: Step 110: Obtain multiple fully transparent strips of specified width; Step 120: Obtain multiple zero-transmittance spacers of specified width; Step 130: The spacer is placed between the plurality of fully transparent strips, so that when light passes through the fully transparent strips, diffracted light is generated, and the diffracted light is interfered with by the spacer to obtain the interference photosensitive spacer.

3. The mask fabrication method using a progressive exposure machine according to claim 1, characterized in that, Step 100 further includes: Step 140: Obtain a light-shielding component and form strip-shaped light-transmitting areas of a specified width and number on the light-shielding component; Step 150: Form strip-shaped light-blocking areas of a specified width and number between the strip-shaped light-transmitting areas, so that when light passes through the strip-shaped light-transmitting areas, diffracted light is generated, and the diffracted light is interfered in the strip-shaped light-blocking areas to obtain the interference photosensitive spacer.

4. The mask fabrication method using a progressive exposure machine according to claim 2 or 3, characterized in that, Step 200 includes: Step 210: Obtain a substrate and deposit a light-shielding film on the substrate; Step 220: Coat the light-shielding film with photoresist to obtain the photomask to be exposed.

5. The mask fabrication method using a progressive exposure machine according to claim 4, characterized in that, Step 300 includes: Step 310: The progressive exposure machine generates an exposure light source according to the set parameters; Step 320: When the exposure light source passes through the interference photosensitive spacer, it undergoes diffraction and interference to obtain an interference light source; Step 330: Use the interference light source to perform interference exposure on the second position of the mask to be exposed, and obtain a second photoresist pattern with a step difference from the first photoresist pattern.

6. The mask fabrication method using a progressive exposure machine according to claim 5, characterized in that, Step 400 includes: Step 410: Place the exposed photomask into the developing solution to remove the unexposed photoresist; Step 420: The first photoresist pattern and the second photoresist pattern are transferred onto the light-shielding film by etching to obtain the first mask pattern and the second mask pattern.

7. A mask fabrication system, using the mask fabrication method with a progressive exposure machine as described in any one of claims 1-6, characterized in that, include: Progressive exposure machine, main photosensitive spacer and interference photosensitive spacer; The progressive exposure machine performs full exposure on a first position of the photomask to be exposed through the main photosensitive spacer to obtain a first photoresist pattern, and performs interference exposure on a second position of the photomask to be exposed through the interference photosensitive spacer to obtain a second photoresist pattern with a step difference from the first photoresist pattern.

8. The mask fabrication system according to claim 7, characterized in that, The interference photosensitive spacer includes: Multiple fully transparent strips of specified width; Multiple zero-transmittance spacers of specified width; The spacer is disposed between the plurality of fully transparent strips, so that when light passes through the fully transparent strips, diffracted light is generated, and the diffracted light interferes with the spacer to obtain the interference photosensitive spacer.

9. The mask fabrication system according to claim 7, characterized in that, The interference photosensitive spacer has strip-shaped light-transmitting areas of a specified width and number formed on it; Between the strip-shaped light-transmitting areas on the interference photosensitive spacer, strip-shaped light-blocking areas of a specified width and number are also formed, so that when light passes through the strip-shaped light-transmitting areas, diffracted light is generated, and the diffracted light interferes in the strip-shaped light-blocking areas to obtain the interference photosensitive spacer.

10. The mask fabrication system according to claim 8, characterized in that, The width of the fully transparent strip is 2.6 μm, and the width of the zero-transparency spacer is 7 μm.

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