Mask imaging method and device, storage medium and electronic equipment

Abstract

The invention discloses a mask imaging method and device, a storage medium and electronic device.The mask imaging method comprises the steps that the geometrical shape and feature information of a mask are obtained, and the mask comprises at least two layers of media; based on the feature information, calculating a transmission matrix of each layer of medium by using a transmission matrix method to obtain a total transmission matrix of the mask; correcting the initial incident field based on the total transmission matrix to obtain a target incident field; calculating the diffraction near field intensity of each point of the mask according to the target incident field; and generating a space image of the mask through a preset imaging method according to the diffraction near-field intensity and the geometrical shape. According to the scheme, the mask imaging precision can be improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of mask technology, and specifically to a mask imaging method, device, storage medium and electronic device. Background Art

[0002] In photolithography, masks are used to modulate incident light to form desired micro-nano patterns on wafers. As integrated circuit processes move into advanced nodes of 7nm and below, the diffraction effect of photolithography masks has a significantly increased impact on imaging quality, and the traditional thin mask model has been unable to meet the needs of high-precision imaging. Summary of the invention

[0003] The embodiments of the present application provide a mask imaging method, device, storage medium and electronic device, which can improve the accuracy of mask imaging.

[0004] In a first aspect, an embodiment of the present application provides a mask imaging method, comprising: Acquiring geometric shape and feature information of a mask, wherein the mask includes at least two layers of medium; Based on the characteristic information, a transmission matrix method is used to calculate a transmission matrix of each layer of the medium to obtain a total transmission matrix of the mask; Correcting the initial incident field based on the total transmission matrix to obtain a target incident field; Calculating the diffraction near-field intensity of each point of the mask according to the target incident field; An aerial image of the mask is generated by a preset imaging method according to the diffraction near-field intensity and the geometric shape.

[0005] In the mask imaging method provided in the embodiment of the present application, the transmission matrix of each layer of the medium is calculated based on the feature information using the transmission matrix method to obtain the total transmission matrix of the mask, including: According to the characteristic information, the phase delay and amplitude attenuation of the light in each layer of the medium are calculated to obtain a transmission matrix of each layer of the medium; The transmission matrix of each layer of the medium is recursively combined to obtain the total transmission matrix of the mask.

[0006] In the mask imaging method provided in the embodiment of the present application, the characteristic information includes the thickness, refractive index and absorption coefficient of each layer of the medium; The step of calculating the phase delay and amplitude attenuation of light in each layer of the medium according to the characteristic information to obtain a transmission matrix of each layer of the medium includes: Calculating the phase delay of the light in each layer of the medium according to the refractive index of each layer of the medium, the thickness and the wavelength of the light; Calculate the amplitude attenuation of light in each layer of the medium according to the absorption coefficient and the thickness of each layer of the medium; The phase delay and the amplitude attenuation are expressed by a matrix to obtain a transmission matrix of each layer of the medium.

[0007] In the mask imaging method provided in the embodiment of the present application, the initial incident field is corrected based on the total transmission matrix to obtain the target incident field, including: extracting the phase delay and the amplitude attenuation from the total transmission matrix; The initial incident field is corrected according to the phase delay and the amplitude attenuation to obtain a target incident field.

[0008] In the mask imaging method provided in the embodiment of the present application, the step of calculating the diffraction near-field intensity of each point of the mask according to the target incident field includes: Substitute the target incident field into the diffraction near field calculation formula to calculate the diffraction near field intensity of each point of the mask.

[0009] In the mask imaging method provided in the embodiment of the present application, substituting the target incident field into the diffraction near field calculation formula to calculate the diffraction near field intensity of each point of the mask includes: Calculating the spatial angular spectrum of the target incident field; The spatial angular spectrum is propagated based on the propagation factor, and the diffraction near-field intensity of each point of the mask is calculated based on the propagated spatial angular spectrum.

[0010] In the mask imaging method provided in an embodiment of the present application, the step of calculating the diffraction near-field intensity of each point of the mask based on the propagated spatial angular spectrum includes: Performing inverse Fourier transform on the propagated spatial angular spectrum to obtain the diffraction light field of each point of the mask; The diffraction near-field intensity of each point of the mask is calculated according to the diffraction light field.

[0011] In a second aspect, an embodiment of the present application provides a mask imaging device, comprising: A mask acquisition unit, used to acquire geometric shape and feature information of a mask, wherein the mask includes at least two layers of medium; A matrix calculation unit, configured to calculate a transmission matrix of each layer of the medium using a transmission matrix method based on the characteristic information to obtain a total transmission matrix of the mask; A light field correction unit, configured to correct the initial incident field based on the total transmission matrix to obtain a target incident field; A field intensity calculation unit, used to calculate the diffraction near-field intensity of each point of the mask according to the target incident field; The mask imaging unit is used to generate an aerial image of the mask by a preset imaging method according to the diffraction near-field intensity and the geometric shape.

[0012] In a third aspect, the present application provides a storage medium storing a plurality of instructions, wherein the instructions are suitable for loading by a processor to execute any of the mask imaging methods described above.

[0013] In a fourth aspect, the present application provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements any of the above-described mask imaging methods when executing the computer program.

[0014] In summary, the mask imaging method provided in the embodiment of the present application includes obtaining the geometric shape and feature information of the mask, wherein the mask includes at least two layers of medium; based on the feature information, using the transfer matrix method to calculate the transfer matrix of each layer of the medium to obtain the total transfer matrix of the mask; based on the total transfer matrix, correcting the initial incident field to obtain the target incident field; according to the target incident field, calculating the diffraction near-field intensity of each point of the mask; according to the diffraction near-field intensity and the geometric shape, generating the spatial image of the mask by a preset imaging method. By calculating the diffraction near-field intensity of the mask, this solution can optimize the mask pattern to reduce optical aberrations and improve the accuracy of mask imaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0016] Figure 1 It is a schematic diagram of an application scenario of the mask imaging method provided in an embodiment of the present application.

[0017] Figure 2 It is a flowchart of the mask imaging method provided in an embodiment of the present application.

[0018] Figure 3 It is a schematic structural diagram of a mask imaging device provided in an embodiment of the present application.

[0019] Figure 4 It is a schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0020] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0021] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0022] It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0023] In the subsequent description, the suffixes such as "module", "component" or "unit" used to represent elements are only used to facilitate the description of the present application, and have no specific meanings. Therefore, "module", "component" or "unit" can be used in a mixed manner.

[0024] In the description of the present application, it should be noted that the terms "upper", "lower", "left", "right", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present application. In addition, terms such as "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0025] As integrated circuit technology enters advanced nodes of 7nm and below, the diffraction effect of photolithography masks has significantly increased its impact on imaging quality, and traditional thin mask models can no longer meet the needs of high-precision imaging.

[0026] Based on this, the embodiments of the present application provide a mask imaging method, device, storage medium and electronic device. Specifically, the mask imaging device can be integrated in an electronic device, and the electronic device can be a server or a terminal. Among them, the terminal can include a mobile phone, a wearable smart device, a tablet computer, a laptop computer, and a personal computer (PC), etc.; the server can be a single server or a server cluster composed of multiple servers, and can be a physical server or a virtual server.

[0027] For example, Figure 1 As shown, after obtaining the geometric shape and characteristic information of the mask, the electronic device can use the transfer matrix method to calculate the transfer matrix of each layer of the medium based on the characteristic information to obtain the total transfer matrix of the mask; then the initial incident field is corrected based on the total transfer matrix to obtain the target incident field; then the diffraction near-field intensity of each point of the mask is calculated according to the target incident field; finally, according to the diffraction near-field intensity and the geometric shape of the mask, a spatial image of the mask is generated by a preset imaging method.

[0028] The technical solutions shown in the present application will be described in detail below through specific embodiments. It should be noted that the description order of the following embodiments is not intended to limit the priority order of the embodiments.

[0029] See also Figure 2 , Figure 2 : is a schematic diagram of the process of the mask imaging method provided in the embodiment of the present application. The specific process of the mask imaging method can be as follows: 101. Obtain geometric shape and feature information of a mask, wherein the mask includes at least two layers of medium.

[0030] Specifically, the mask file can be read and parsed from the lithography system to obtain the geometric shape and feature information of the mask.

[0031] The characteristic information includes the thickness and optical properties of each layer of the medium. The optical properties of the medium may include the refractive index and absorption coefficient, which can determine the propagation behavior of light. The thickness of the medium determines the change in phase when light passes through the medium. The mask is usually composed of multiple different dielectric layers, such as chrome layers and glass layers.

[0032] In the embodiment of the present application, the thickness of each dielectric layer of the mask is evenly distributed.

[0033] 102. Use the transmission matrix method to calculate the transmission matrix of each layer of the medium to obtain the total transmission matrix of the mask.

[0034] The basic idea of ​​the transfer matrix method (TMM) in the embodiment of the present application is to represent the phase delay and amplitude attenuation of light passing through each layer of medium with a matrix. The light propagation of each layer of medium can be represented by a transfer matrix, which describes the phase delay and amplitude attenuation of light.

[0035] The transmission of light in each layer of medium can be represented by matrix multiplication. The propagation effect of light in each layer of medium depends on the output of the previous layer of medium. For example, the mask has two layers of medium (chrome layer and glass layer), and its total transmission matrix M total It is the product of the transmission matrices of each layer: M total =M1·M2.

[0036] Among them, M1 is the transmission matrix of the chrome layer, and M2 is the transmission matrix of the glass layer. It should be noted that when calculating the transmission matrix, the incident angle and wavelength of light also need to be considered, and the propagation speed of light in different media is different.

[0037] In the transfer matrix method, the propagation of light is determined by a combination of phase delay due to the refractive index variation of the medium and the layer thickness, and amplitude attenuation due to the absorption of light in the medium.

[0038] Therefore, step 102 may specifically be to calculate the phase delay and amplitude attenuation of light in each layer of the medium according to the characteristic information to obtain the transmission matrix of each layer of the medium; and recursively combine the transmission matrix of each layer of the medium to obtain the total transmission matrix of the mask.

[0039] In each layer, the light undergoes a phase change due to the refractive index and thickness of the medium. Phase retardation ( ) can be calculated by the following formula: Where n is the refractive index of the medium, h is the thickness of the medium, and λ is the wavelength of light. That is, the phase delay of light in each layer of the medium can be calculated based on the refractive index, thickness of each layer of the medium and the wavelength of light.

[0040] Light will be absorbed to a certain extent during propagation, and the amplitude attenuation is usually determined by the absorption coefficient k of the medium. The amplitude attenuation can be calculated by the following formula: A=e −k·h . Where A is the attenuation factor, k is the absorption coefficient of the medium, and h is the thickness of the medium. That is, the amplitude attenuation of light in each layer of the medium can be calculated based on the absorption coefficient and thickness of each layer of the medium.

[0041] Afterwards, the phase delay and amplitude attenuation of light in each layer of the medium are expressed by a matrix, and the transmission matrix of each layer of the medium can be obtained.

[0042] 103. The initial incident field is corrected based on the total transmission matrix to obtain the target incident field.

[0043] Specifically, the phase delay and amplitude attenuation can be extracted from the total transmission matrix; then the initial incident field is corrected according to the phase delay and amplitude attenuation to obtain the target incident field.

[0044] It should be noted that the initial incident field is the same as the light in the process of forming the transmission matrix.

[0045] 104. Calculate the diffraction near-field intensity at each point of the mask based on the target incident field.

[0046] Specifically, the target incident field can be substituted into the diffraction near-field calculation formula to calculate the diffraction near-field intensity at each point of the mask.

[0047] In some embodiments, the spatial angular spectrum of the target incident field may be calculated; then the spatial angular spectrum may be propagated based on a propagation factor, and the diffraction near-field intensity of each point of the mask may be calculated based on the propagated spatial angular spectrum.

[0048] Among them, the target incident field can be subjected to a two-dimensional Fourier transform to obtain a spatial angular spectrum. For example, the target incident field is E corrected (x,y), for E corrected (x, y) is transformed into a two-dimensional Fourier transform to obtain the spatial angular spectrum as follows: E spatial (k x , k y )=F{E corrected (x,y)} Propagating the spatial angular spectrum based on the propagation factor refers to converting the propagation of the spatial angular spectrum into a wave number domain transfer function description. Specifically, the spatial angular spectrum after propagation can be obtained by multiplying the spatial angular spectrum with the propagation factor.

[0049] In some embodiments, the propagated spatial angular spectrum may be subjected to an inverse Fourier transform to obtain a diffracted light field at each point of the mask. Then, the diffracted near-field intensity at each point of the mask is calculated based on the diffracted light field. The square of the amplitude of the diffracted light field is the diffracted near-field intensity at each point.

[0050] 105. Generate an aerial image of the mask by a preset imaging method according to the diffraction near-field intensity and geometric shape.

[0051] For example, the optical imaging system can be modeled based on the diffraction near-field intensity and geometry, the transfer function of the imaging lens (such as the convolution PSF) can be introduced, and the numerical aperture (NA) and imaging magnification of the system can be considered to simulate the aerial image.

[0052] In summary, the mask imaging method provided in the embodiment of the present application includes obtaining the geometric shape and feature information of the mask, wherein the mask includes at least two layers of medium; based on the feature information, using the transfer matrix method to calculate the transfer matrix of each layer of medium to obtain the total transfer matrix of the mask; based on the total transfer matrix, correcting the initial incident field to obtain the target incident field; according to the target incident field, calculating the diffraction near-field intensity of each point of the mask; and generating a spatial image of the mask through a preset imaging method according to the diffraction near-field intensity and the geometric shape. This scheme uses the transfer matrix method to correct the phase and amplitude effects of the incident field caused by the thickness and optical properties of each layer of medium in the mask, thereby improving the accuracy of the diffraction near-field intensity, thereby optimizing the mask pattern to reduce optical aberrations and improve the accuracy of mask imaging.

[0053] In order to better implement the mask imaging method provided in the embodiment of the present application, the embodiment of the present application also provides a mask imaging device, wherein the meanings of the terms are the same as those in the above-mentioned mask imaging method, and the specific implementation details can refer to the description in the method embodiment.

[0054] See also Figure 3 , Figure 3 is a schematic diagram of the structure of a mask imaging device provided in an embodiment of the present application. The mask imaging device may include a mask acquisition unit 201, a matrix calculation unit 202, a light field correction unit 203, a field intensity calculation unit 204 and a mask imaging unit 205. Among them, The mask acquisition unit 201 is used to acquire the geometric shape and characteristic information of the mask, wherein the mask includes at least two layers of medium; A matrix calculation unit 202 is used to calculate the transmission matrix of each layer of the medium based on the characteristic information using a transmission matrix method to obtain a total transmission matrix of the mask; A light field correction unit 203, configured to correct the initial incident field based on the total transmission matrix to obtain a target incident field; A field intensity calculation unit 204 is used to calculate the diffraction near field intensity of each point of the mask according to the target incident field; The mask imaging unit 205 is used to generate an aerial image of the mask by a preset imaging method according to the diffraction near-field intensity and the geometric shape.

[0055] The specific implementation of each of the above units can refer to the above-mentioned embodiment of the mask imaging method, which will not be described one by one here.

[0056] In summary, the mask imaging device provided in the embodiment of the present application can obtain the geometric shape and feature information of the mask through the mask acquisition unit 201, and the mask includes at least two layers of medium; the matrix calculation unit 202 uses the transmission matrix method to calculate the transmission matrix of each layer of medium based on the feature information to obtain the total transmission matrix of the mask; the light field correction unit 203 corrects the initial incident field based on the total transmission matrix to obtain the target incident field; the field intensity calculation unit 204 calculates the diffraction near-field intensity of each point of the mask according to the target incident field; the mask imaging unit 205 generates a spatial image of the mask according to the diffraction near-field intensity and the geometric shape through a preset imaging method. This scheme uses the transmission matrix method to correct the phase and amplitude effects of the thickness and optical properties of each layer of medium in the mask on the incident field, improves the accuracy of the diffraction near-field intensity, and thus optimizes the mask pattern to reduce optical aberrations and improve the accuracy of mask imaging.

[0057] The present application also provides an electronic device, in which the mask imaging device of the present application can be integrated, such as Figure 4 As shown, it shows a schematic diagram of the structure of the electronic device involved in the embodiment of the present application, specifically: The electronic device may include one or more processors 301 of processing cores and one or more computer-readable storage media memories 302 and other components. Those skilled in the art will appreciate that Figure 4 The electronic device structure shown in the figure does not constitute a limitation on the electronic device, and may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently. The processor 301 is the control center of the electronic device, which uses various interfaces and lines to connect various parts of the entire electronic device, and executes various functions of the electronic device and processes data by running or executing the software program and / or the present application stored in the memory 302, and calling the data stored in the memory 302, so as to monitor the electronic device as a whole. Optionally, the processor 301 may include one or more processing cores; preferably, the processor 301 may integrate an application processor and a modem processor, wherein the application processor mainly processes the operation storage medium, user interface and application program, etc., and the modem processor mainly processes wireless communication. It is understandable that the above-mentioned modem processor may not be integrated into the processor 301.

[0058] The memory 302 can be used to store software programs and the present application. The processor 301 executes various functional applications and data processing by running the software programs and the present application stored in the memory 302. The memory 302 may mainly include a program storage area and a data storage area, wherein the program storage area may store an operating storage medium, an application required for at least one function, etc.; the data storage area may store data created according to the use of the electronic device, etc. In addition, the memory 302 may include a high-speed random access memory, and may also include a non-volatile memory, such as at least one disk storage device, a flash memory device, or other volatile solid-state storage devices. Accordingly, the memory 302 may also include a memory controller to provide the processor 301 with access to the memory 302.

[0059] Although not shown, the electronic device may further include a display unit, an input unit, a power supply, etc., which will not be described in detail herein. Specifically in this embodiment, the processor 301 in the electronic device will load the executable files corresponding to the processes of one or more application programs into the memory 302 according to the following instructions, and the processor 301 will run the application programs stored in the memory 302, thereby realizing various functions, as follows: Acquiring geometric shape and feature information of a mask, wherein the mask includes at least two layers of medium; Based on the characteristic information, the transmission matrix of each layer of medium is calculated using the transmission matrix method to obtain the total transmission matrix of the mask; The initial incident field is corrected based on the total transmission matrix to obtain the target incident field; According to the target incident field, calculate the diffraction near-field intensity at each point of the mask; Based on the diffraction near-field intensity and geometry, an aerial image of the mask is generated using a preset imaging method.

[0060] A person of ordinary skill in the art will appreciate that all or part of the steps in the various methods of the above embodiments may be completed by instructions, or by controlling related hardware through instructions. The instructions may be stored in a computer-readable storage medium and loaded and executed by a processor.

[0061] To this end, an embodiment of the present application provides a storage medium in which a plurality of instructions are stored, and the instructions can be loaded by a processor to execute the steps in any method provided in the embodiment of the present application. For example, the instructions can execute the following steps: Acquiring geometric shape and feature information of a mask, wherein the mask includes at least two layers of medium; Based on the characteristic information, the transmission matrix of each layer of medium is calculated using the transmission matrix method to obtain the total transmission matrix of the mask; The initial incident field is corrected based on the total transmission matrix to obtain the target incident field; According to the target incident field, calculate the diffraction near-field intensity at each point of the mask; Based on the diffraction near-field intensity and geometry, an aerial image of the mask is generated using a preset imaging method.

[0062] The specific implementation of the above operations can be found in the previous embodiments, which will not be described in detail here.

[0063] The storage medium may include: a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, etc.

[0064] Since the instructions stored in the storage medium can execute the steps in any method provided in the embodiments of the present application, the beneficial effects that can be achieved by any method provided in the embodiments of the present application can be achieved. Please refer to the previous embodiments for details and will not be repeated here.

[0065] The mask imaging method, device, storage medium and electronic device provided by the present application are respectively introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the core idea of ​​the present application; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A mask imaging method, characterized in that: include: Acquiring geometric shape and feature information of a mask, wherein the mask includes at least two layers of medium; Based on the characteristic information, a transmission matrix method is used to calculate a transmission matrix of each layer of the medium to obtain a total transmission matrix of the mask; Correcting the initial incident field based on the total transmission matrix to obtain a target incident field; Calculating the diffraction near-field intensity of each point of the mask according to the target incident field; An aerial image of the mask is generated by a preset imaging method according to the diffraction near-field intensity and the geometric shape.

2. The mask imaging method according to claim 1, characterized in that: The step of calculating the transmission matrix of each layer of the medium using a transmission matrix method based on the characteristic information to obtain a total transmission matrix of the mask includes: According to the characteristic information, the phase delay and amplitude attenuation of the light in each layer of the medium are calculated to obtain a transmission matrix of each layer of the medium; The transmission matrix of each layer of the medium is recursively combined to obtain the total transmission matrix of the mask.

3. The mask imaging method according to claim 2, characterized in that: The characteristic information includes the thickness, refractive index and absorption coefficient of each layer of the medium; The step of calculating the phase delay and amplitude attenuation of light in each layer of the medium according to the characteristic information to obtain a transmission matrix of each layer of the medium includes: Calculating the phase delay of the light in each layer of the medium according to the refractive index of each layer of the medium, the thickness and the wavelength of the light; Calculate the amplitude attenuation of light in each layer of the medium according to the absorption coefficient and the thickness of each layer of the medium; The phase delay and the amplitude attenuation are expressed by a matrix to obtain a transmission matrix of each layer of the medium.

4. The mask imaging method according to claim 3, characterized in that: The correcting the initial incident field based on the total transmission matrix to obtain the target incident field includes: extracting the phase delay and the amplitude attenuation from the total transmission matrix; The initial incident field is corrected according to the phase delay and the amplitude attenuation to obtain a target incident field.

5. The mask imaging method according to claim 1, characterized in that: Calculating the diffraction near-field intensity of each point of the mask according to the target incident field includes: Substitute the target incident field into the diffraction near field calculation formula to calculate the diffraction near field intensity of each point of the mask.

6. The mask imaging method according to claim 5, characterized in that: Substituting the target incident field into a diffraction near field calculation formula to calculate the diffraction near field intensity of each point of the mask includes: Calculating the spatial angular spectrum of the target incident field; The spatial angular spectrum is propagated based on the propagation factor, and the diffraction near-field intensity of each point of the mask is calculated based on the propagated spatial angular spectrum.

7. The mask imaging method according to claim 6, characterized in that: The calculating the diffraction near-field intensity of each point of the mask based on the propagated spatial angular spectrum comprises: Performing inverse Fourier transform on the propagated spatial angular spectrum to obtain the diffraction light field of each point of the mask; The diffraction near-field intensity of each point of the mask is calculated according to the diffraction light field.

8. A mask imaging device, characterized in that: include: A mask acquisition unit, used to acquire geometric shape and feature information of a mask, wherein the mask includes at least two layers of medium; A matrix calculation unit, configured to calculate a transmission matrix of each layer of the medium using a transmission matrix method based on the characteristic information to obtain a total transmission matrix of the mask; A light field correction unit, configured to correct the initial incident field based on the total transmission matrix to obtain a target incident field; A field intensity calculation unit, used to calculate the diffraction near-field intensity of each point of the mask according to the target incident field; The mask imaging unit is used to generate an aerial image of the mask by a preset imaging method according to the diffraction near-field intensity and the geometric shape.

9. A storage medium, characterized in that: The storage medium stores a plurality of instructions, and the instructions are suitable for being loaded by a processor to execute the mask imaging method according to any one of claims 1 to 7.

10. An electronic device, characterized in that: The invention comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein the mask imaging method according to any one of claims 1 to 7 is implemented when the processor executes the computer program.

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