Bonded wafer separation equipment and method

Abstract

The invention relates to bonded wafer separation equipment and method, and the equipment comprises a bearing device which is used for bearing and fixing a bonded wafer; the adsorption device is located above the bearing device; the separating device comprises a plurality of nozzles, the nozzles are evenly distributed around the bearing device, and the nozzles face the area between the bearing device and the adsorption device. The separation device is provided with the plurality of nozzles, the plurality of nozzle heads face the area between the bearing device and the adsorption device, and the plurality of nozzles can emit the preset substance at the same time, so that the bonded wafer is separated. The arrangement of the plurality of nozzles enables the separation of the bonded wafer to be more uniform. At the moment, the adsorption device can be arranged to be not in contact with the bonding wafer fixed on the bearing device, so that the damage to the bonding wafer can be reduced.

Description

Technical Field

[0001] The present application relates to the field of integrated circuit technology, and in particular to a bonded wafer separation device and method. Background Art

[0002] In the traditional wafer processing process, two wafers need to be bonded to form a bonded wafer.

[0003] As an intermediate state in the wafer processing process, the bonded wafer needs to be separated after the preset processing technology, and then undergo other processes separately or be recycled and reused.

[0004] However, the conventional method for separating bonded wafers has the problem of damaging the bonded wafers. Summary of the invention

[0005] Based on this, it is necessary to provide a bonded wafer separation device and method to address the problem of damaging bonded wafers in traditional technologies.

[0006] In order to achieve the above objectives, on the one hand, the present application provides a bonded wafer separation device, comprising:

[0007] A carrying device, used for carrying and fixing the bonded wafer;

[0008] An adsorption device, located above the carrying device;

[0009] The separation device comprises a plurality of nozzles, wherein the plurality of nozzles are evenly distributed around the carrying device, and the nozzle heads face the area between the carrying device and the adsorption device.

[0010] In the above-mentioned bonded wafer separation device, the separation device is provided with multiple nozzles, and the multiple nozzle heads are all directed toward the area between the carrier device and the adsorption device. The multiple nozzles can simultaneously emit preset substances so that the bonded wafers are separated. The setting of multiple nozzles makes the separation of the bonded wafers more uniform. At this time, the adsorption device can be set to have no contact with the bonded wafer fixed on the carrier device, thereby reducing damage to the bonded wafer.

[0011] In one embodiment, the adsorption device includes a first suction cup and a limiting rod, and the limiting rod is located at the edge of the first suction cup.

[0012] In one of the embodiments, the length of the limiting rod is greater than the sum of a preset distance and a thickness of the bonding wafer, and the preset distance is greater than zero.

[0013] In one of the embodiments, a blowing hole connected to a blowing pipeline is provided in the first suction cup, and the blowing hole is arranged opposite to the limiting rod.

[0014] In one embodiment, the adsorption device further includes a stress sensor, and the stress sensor is located on the first suction cup.

[0015] In one of the embodiments, the carrying device includes a second suction cup, and the second suction cup is used to absorb the bonded wafer.

[0016] The present application also provides a bonded wafer separation method, comprising:

[0017] Providing a bonded wafer, the bonded wafer comprising a first wafer and a second wafer bonded to each other;

[0018] Fixing the bonded wafer on a carrier;

[0019] Lowering the adsorption device to a preset position, where there is a preset distance between the preset position and the surface of the bonded wafer, and the preset distance is greater than zero;

[0020] causing a plurality of nozzles of a separation device to simultaneously emit a preset substance, so as to separate the first wafer from the second wafer by kinetic energy of the preset substance;

[0021] The separated second wafer is carried and fixed by the carrying device, and the separated first wafer is adsorbed by the adsorption device.

[0022] In the above-mentioned bonded wafer separation method, the adsorption device is lowered to a preset position, and there is a preset distance between the adsorption device and the surface of the bonded wafer, and there is no contact between the two, thereby effectively reducing contact damage during the bonded wafer separation process. At the same time, the bonded wafer separation method of this embodiment is controllable, and it can be stopped at any step during the bonded wafer separation process.

[0023] In addition, when the bonded wafer separation equipment and the single wafer cleaning, grinding and other equipment are arranged in the same processing chamber, the bonded wafer separation method in this embodiment can also be combined with the single wafer cleaning, grinding and other process flows. Therefore, this method is scalable and widely applicable.

[0024] In one embodiment, the adsorption device includes a first suction cup and a limiting rod, wherein the first suction cup is used to adsorb the first wafer, and the limiting rod is located at the edge of the first suction cup.

[0025] The method comprises: carrying and fixing the separated second wafer by the carrying device, and adsorbing the separated first wafer by the adsorption device, comprising:

[0026] The separated first wafer is carried and fixed by the carrying device, and the separated second wafer is adsorbed by the first suction cup, and the first wafer is limited by the limiting rod.

[0027] In one of the embodiments, while the first suction cup adsorbs the separated first wafer, air is also blown toward the first wafer in a direction opposite to the adsorption direction.

[0028] In one embodiment, the method further comprises:

[0029] The stress on the first suction cup is detected.

[0030] In one embodiment, the preset substance includes nitrogen or cleaning fluid. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0032] Figure 1 is a flow chart of a bonded wafer separation method provided in one embodiment;

[0033] Figure 2 is a schematic diagram of a bonded wafer provided in an embodiment;

[0034] Figure 3 is a schematic structural diagram of an adsorption device provided in an embodiment;

[0035] Figures 4 to 5 It is a schematic diagram of the operation of a bonded wafer separation device provided in one embodiment.

[0036] Explanation of the reference numerals: 100 - bonding wafer, 110 - first wafer, 120 - second wafer, 200 - adsorption device, 210 - first suction cup, 220 - limiting rod, 230 - blowing hole, 240 - stress sensor, 300 - carrying device, 400 - separation device, 410 - nozzle. DETAILED DESCRIPTION

[0037] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0039] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers.

[0040] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" etc. specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof.

[0041] Embodiments of the present invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present invention, and variations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Thus, embodiments of the present invention should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes due to, for example, manufacturing techniques.

[0042] In one embodiment, see Figure 4 as well as Figure 5 , a bonded wafer 100 separation device is provided, including: a carrying device 300, an adsorption device 200 and a separation device 400.

[0043] The carrying device 300 is used to carry and fix the bonded wafer 100. As an example, the carrying device 300 may include a second suction cup. The second suction cup adsorbs the bonded wafer 100. Specifically, the second suction cup may be provided with a through hole for exhausting air, and then the bonded wafer 100 is adsorbed by vacuuming. Alternatively, in other examples, the carrying device 300 may also adsorb the bonded wafer 100 by other methods, for example, other methods include electrostatic adsorption and magnetic adsorption.

[0044] The adsorption device 200 is located above the carrier 300. The adsorption device 200 and the carrier 300 are not in contact with each other. The adsorption device 200 is used to adsorb the wafer located at the upper end after the bonded wafers 100 are separated.

[0045] The separation device 400 includes a plurality of nozzles 410, which are evenly distributed around the carrier 300, and the nozzle heads face the area between the carrier 300 and the adsorption device 200. It can be understood that when the bonded wafer 100 separation device is working, the bonded wafer 100 is placed in the area. Multiple means two or more, and the number of nozzles 410 is not limited here. For example, the separation device 400 may include eight nozzles 410. The nozzle 410 emits a preset substance (such as a gas substance or a liquid substance) to the bonded wafer 100 through the nozzle head, and uses the kinetic energy of the preset substance to separate the bonded wafer 100.

[0046] In this embodiment, the separation device 400 is provided with a plurality of nozzles 410, and the plurality of nozzle heads are all directed toward the area between the carrier device 300 and the adsorption device 200, and the plurality of nozzles 410 can simultaneously emit a preset substance, so that the bonded wafer 100 is separated. The provision of the plurality of nozzles 410 makes the separation of the bonded wafer 100 more uniform. At this time, the adsorption device 200 can be provided without contact with the bonded wafer 100 fixed on the carrier device 300, thereby reducing damage to the bonded wafer 100.

[0047] In one embodiment, see Figure 3 The adsorption device 200 includes a first suction cup 210 and a limiting rod 220, and the limiting rod 220 is located at the edge of the first suction cup 210. The first suction cup 210 may be provided with a through hole for exhausting air, and the first suction cup 210 is used to adsorb the wafer at the upper end after the bonded wafer 100 is separated.

[0048] There is no restriction on the number of the limiting rods 220, for example, there may be three limiting rods 220. The limiting rods 220 are used to limit the bonded wafer 100. When the flow rate of one or several nozzles 410 among the multiple nozzles 410 is inconsistent with that of other nozzles 410, the bonded wafer 100 may be displaced or even fly out of the area between the carrier device 300 and the adsorption device 200 under the kinetic energy of the nozzle 410 emitting the preset substance. At this time, the limiting rods 220 can limit the bonded wafer 100, so that the bonded wafer 100 is maintained in the area between the carrier device 300 and the adsorption device 200.

[0049] As an example, the length of the limiting rod 220 may be greater than the sum of the preset distance and the thickness of the bonded wafer 100, wherein the preset distance is greater than zero. For example, the distance between the adsorption device 200 and the bonded wafer 100 placed on the carrier device 300 may be defined as the preset distance. In this case, the limiting rod 220 may better play a limiting role.

[0050] In one embodiment, see Figure 3 The first suction cup 210 is provided with a blowing hole 230 connected to the blowing pipeline, and the blowing hole 230 is arranged opposite to the limiting rod 220. The blowing hole 230 and the limiting rod 220 can be arranged together at the edge of the first suction cup 210, and the number of the blowing holes 230 can be consistent with the number of the limiting rods 220.

[0051] In this embodiment, the blowing hole 230 is arranged opposite to the limiting rod 220. The limiting rod 220 serves as a solid barrier, so that the air blown out of the blowing hole 230 can have a sufficiently strong attraction for the wafer located at the upper end after the bonded wafer 100 is separated, thereby enabling the wafer located at the upper end after the bonded wafer 100 is separated to be initially raised in height, thereby reducing the damage caused by only using the first suction cup 210 to adsorb the upper wafer.

[0052] In other embodiments, the blowing hole 230 may not be arranged opposite to the limiting rod 220 , and the blowing hole 230 may be located at other positions of the first suction cup 210 .

[0053] In one embodiment, see Figure 3 The adsorption device 200 further includes a stress sensor 240, and the stress sensor 240 is located on the first suction cup 210. The stress sensor 240 is used to monitor the stress of the first suction cup 210 in real time.

[0054] In one embodiment, see Figure 1 , a method for separating a bonded wafer 100 is provided, comprising:

[0055] Step S100, providing a bonding wafer 100, wherein the bonding wafer 100 includes a first wafer 110 and a second wafer 120 bonded to each other;

[0056] Step S200, fixing the bonded wafer 100 on the carrier device 300;

[0057] Step S300, lowering the adsorption device 200 to a preset position, where there is a preset distance between the preset position and the surface of the bonding wafer 100, and the preset distance is greater than zero;

[0058] Step S400, making the plurality of nozzles 410 of the separation device 400 emit a preset substance simultaneously, so as to separate the first wafer 110 and the second wafer 120 by the kinetic energy of the preset substance;

[0059] In step S500 , the separated second wafer 120 is carried and fixed by the carrying device 300 , and the separated first wafer 110 is adsorbed by the adsorption device 200 .

[0060] In step S100, refer to Figure 2During the wafer processing process, the first wafer 110 and the second wafer 120 are bonded by intermolecular forces to form a bonded wafer 100. The materials of the first wafer 110 and the second wafer 120 are not limited here. For example, both can be made of silicon (Si) material. At the same time, other film layers can also be formed on the first wafer 110 and the second wafer 120, which are also not limited here.

[0061] In step S200 , as an example, the carrier device 300 may include a second suction cup, and when the bonded wafer 100 is fixed on the carrier device 300 , the bonded wafer 100 may be adsorbed on the second suction cup by vacuuming.

[0062] In step S300, refer to Figure 4 , the adsorption device 200 located above the carrier device 300 is gradually lowered until it reaches a preset position, at which time, there is a preset distance between the adsorption device 200 and the surface of the bonded wafer 100, and the two are not in contact. For example, the preset distance may be 2 mm to 3 mm.

[0063] In step S400 , the plurality of nozzles 410 of the separation device 400 emit a preset substance to the bonded wafer 100 through the nozzle head. The preset substance has a certain kinetic energy, which can separate the bonded wafer 100 into the first wafer 110 and the second wafer 120 .

[0064] The form of the preset substance is not limited here, and the preset substance may include gas, liquid or solid. The preset substance may have a high pressure. As an example, the preset substance includes nitrogen or cleaning liquid. When nitrogen is used to separate the bonded wafer 100, the nitrogen causes less damage to the bonded wafer 100. When the cleaning liquid is used to separate the bonded wafer 100, the cleaning liquid can separate and clean the bonding surface of the bonded wafer 100, reducing the process flow and improving the process efficiency.

[0065] In step S500, refer to Figure 5 After the bonded wafer 100 is separated into the first wafer 110 and the second wafer 120 , the second wafer 120 is still carried and fixed by the carrying device 300 , and the first wafer 110 located above the second wafer 120 is adsorbed by the adsorption device 200 .

[0066] In this embodiment, the adsorption device 200 is lowered to a preset position, and there is a preset distance between the adsorption device 200 and the surface of the bonded wafer 100, and there is no contact between the two, thereby effectively reducing contact damage during the separation process of the bonded wafer 100. At the same time, the bonded wafer 100 separation method of this embodiment is controllable, and it can be stopped at any step during the separation process of the bonded wafer 100.

[0067] In addition, when the bonded wafer 100 separation equipment and the single-wafer cleaning, grinding and other equipment are arranged in the same processing chamber, the bonded wafer 100 separation method in this embodiment can also be combined with the single-wafer cleaning, grinding and other process flows of the wafer. Therefore, this method is scalable and widely applicable.

[0068] In one embodiment, the adsorption device 200 includes a first suction cup 210 and a limiting rod 220 . The first suction cup 210 is used to adsorb the first wafer 110 . The limiting rod 220 is located at the edge of the first suction cup 210 .

[0069] Step S500 includes:

[0070] In step S510 , the separated first wafer 110 is carried and fixed by the carrying device 300 , and the separated first wafer 110 is adsorbed by the first suction cup 210 , and the first wafer 110 is limited by the limiting rod 220 .

[0071] When the flow rate of one or more of the multiple nozzles 410 is inconsistent with that of the other nozzles 410, the bonded wafer 100 may be offset or even fly out of the area between the carrier 300 and the adsorption device 200 under the kinetic energy of the preset substance emitted by the nozzle head. At this time, the limiting rod 220 can limit the bonded wafer 100, so that the bonded wafer 100 is maintained in the area between the carrier 300 and the adsorption device 200. Specifically, the limiting rod 220 can limit the first wafer 110.

[0072] The number of the limiting rods 220 is not limited here, for example, there may be three limiting rods 220. As an example, the length of the limiting rod 220 may be greater than the sum of the preset distance and the thickness of the bonded wafer 100, wherein the preset distance is defined as the distance between the preset position and the bonded wafer 100. For example, the limiting rod 220 may be 10 mm. In this case, the limiting rod 220 may better play a limiting role.

[0073] In one embodiment, at the same time as step S510, the first wafer 110 is also blown in the direction opposite to the adsorption direction. The area where the first wafer 110 is blown has a high flow rate and a low pressure, and the surrounding air will generate an attraction force on the first wafer 110, so that the first wafer 110 is adsorbed and then raised to a certain height. After that, the first suction cup 210 sucks the first wafer 110 tightly by vacuuming.

[0074] As an example, a blowing hole 230 may be provided in the first suction cup 210, and the blowing hole 230 is connected to a blowing pipeline. The blowing hole 230 is arranged opposite to the limiting rod 220. The blowing pipeline blows air to the first wafer 110 through the blowing hole 230, and the airflow is attached to the limiting rod 220. The airflow has a high speed and a low pressure, and the surrounding air will generate an attraction to the first wafer 110, so that the first wafer 110 is adsorbed and then lifted to a certain height.

[0075] In this embodiment, air is first blown on the first wafer 110 to lift the first wafer 110 to a certain height, and then the first suction cup 210 is used to adsorb the first wafer 110. The process of adsorbing the first wafer 110 by the first suction cup 210 is divided into steps, thereby minimizing damage to the first wafer 110.

[0076] In one embodiment, the bonded wafer 100 separation method further includes:

[0077] Step S600 , detecting the stress on the first suction cup 210 .

[0078] As an example, a stress sensor 240 may be provided on the adsorption device 200, and the stress sensor 240 may be used to detect the stress of the first suction cup 210. When the bonded wafer 100 is not completely separated by the separation device 400, the adsorption device 200 may adsorb all of the bonded wafer 100. At this time, the stress of the first suction cup 210 is detected and compared with the set value. There is a difference. By detecting the stress of the first suction cup 210, it is possible to determine whether the bonded wafer 100 is separated.

[0079] Alternatively, when the adsorption device 200 descends, it may contact the bonded wafer 100 on the carrier 300. At this time, the stress of the first suction cup 210 is detected and compared with the set value. The stress of the first suction cup 210 is detected to ensure that the adsorption device 200 is at the preset position.

[0080] It should be understood that although Figure 1 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 1 At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0081] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0082] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0083] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A bonded wafer separation device, characterized in that: include: A carrying device, used for carrying and fixing the bonded wafer; An adsorption device, located above the carrying device; The separation device comprises a plurality of nozzles, wherein the plurality of nozzles are evenly distributed around the carrying device, and the nozzle heads face the area between the carrying device and the adsorption device.

2. The bonded wafer separation device according to claim 1, characterized in that: The adsorption device includes a first suction cup and a limiting rod, and the limiting rod is located at the edge of the first suction cup.

3. The bonded wafer separation device according to claim 2, characterized in that: The length of the limiting rod is greater than the sum of a preset distance and a thickness of the bonding wafer, and the preset distance is greater than zero.

4. The bonded wafer separation device according to claim 2, characterized in that: An air blowing hole connected to an air blowing pipeline is provided in the first suction cup, and the air blowing hole is arranged opposite to the limiting rod.

5. The bonded wafer separation device according to claim 2, characterized in that: The adsorption device further includes a stress sensor, and the stress sensor is located on the first suction cup.

6. The bonded wafer separation device according to claim 1, characterized in that: The carrying device includes a second suction cup, and the second suction cup is used for sucking the bonding wafer.

7. A method for separating bonded wafers, characterized in that: include: Providing a bonded wafer, the bonded wafer comprising a first wafer and a second wafer bonded to each other; Fixing the bonded wafer on a carrier; Lowering the adsorption device to a preset position, where there is a preset distance between the preset position and the surface of the bonded wafer, and the preset distance is greater than zero; causing a plurality of nozzles of a separation device to simultaneously emit a preset substance, so as to separate the first wafer from the second wafer by kinetic energy of the preset substance; The separated second wafer is carried and fixed by the carrying device, and the separated first wafer is adsorbed by the adsorption device.

8. The bonded wafer separation method according to claim 7, characterized in that: The adsorption device includes a first suction cup and a limiting rod, wherein the first suction cup is used to adsorb the first wafer, and the limiting rod is located at the edge of the first suction cup. The method comprises: carrying and fixing the separated second wafer by the carrying device, and adsorbing the separated first wafer by the adsorption device, comprising: The separated first wafer is carried and fixed by the carrying device, and the separated second wafer is adsorbed by the first suction cup, and the first wafer is limited by the limiting rod.

9. The bonded wafer separation method according to claim 8, characterized in that: While the first suction cup adsorbs the separated first wafer, air is blown toward the first wafer in a direction opposite to the adsorption direction.

10. The bonded wafer separation method according to claim 8, characterized in that: The method further comprises: The stress on the first suction cup is detected.

11. The bonded wafer separation method according to claim 7, characterized in that: The preset substance includes nitrogen or cleaning fluid.

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