Turn-on and turn-off speed control circuit, power circuit and electronic device

Abstract

The application provides a turn-on and turn-off speed control circuit, a power circuit and an electronic device. The turn-on and turn-off speed control circuit is connected in series between a gate and a drain of a power device. The turn-on and turn-off speed control circuit comprises a first RCD module. A first end of a first capacitor in the first RCD module is connected to the gate or the drain. A second end of the first capacitor is connected to the drain or the gate through a first diode. The second end of the first capacitor is also connected to the drain or the gate through a first resistor. Thus, the turn-on and turn-off speed control circuit is used to control the turn-on speed or the turn-off speed of the power device, and the switching loss is small, and the circuit efficiency is not affected.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of power electronics, and in particular to a turn-on and turn-off speed control circuit, a power circuit and an electronic device. BACKGROUND

[0002] In a power conversion circuit, a semiconductor power device is often used as a switching device to achieve efficient control and conversion of energy. For example, in a switching power supply topology, the power device is periodically switched to regulate the transmission of electrical energy. However, the switching of the power device is not instantaneous, but there is a transition period during which the power device is in a voltage and current overlap time, resulting in switching loss and causing the device temperature to rise.

[0003] In order to reduce switching loss, the common practice at present is to increase the switching speed of the power device. However, the increase in switching speed can cause serious electromagnetic interference (EMI) and increase the stress on related devices. This can seriously affect the operation of the secondary synchronous rectification power device in, for example, a flyback power supply topology.

[0004] Therefore, how to adjust the switching speed of the power device to reduce switching loss while not affecting the efficiency of the circuit has become a technical problem that needs to be solved in the industry. SUMMARY

[0005] The present application provides a power device and an electronic device, which solve the technical problem of how to adjust the switching speed of the power device to reduce switching loss while not affecting the efficiency of the circuit.

[0006] According to a first aspect of the present application, an embodiment of the present application provides a turn-on and turn-off speed control circuit applied to a power device, the turn-on and turn-off speed control circuit being connected in series between a gate and a drain of the power device, the turn-on and turn-off speed control circuit comprising a first RCD module, the first RCD module comprising a first capacitor, a first resistor and a first diode;

[0007] A first end of the first capacitor is coupled to the gate or the drain, and a second end thereof is coupled to the drain or the gate through the first diode, and the second end of the first capacitor is also coupled to the drain or the gate through the first resistor;

[0008] The power device is an NMOS tube, a PMOS tube, a silicon carbide switch tube, a depletion mode gallium nitride switch tube, an enhancement mode gallium nitride switch tube or a gallium oxide switch tube.

[0009] Optionally, the first RCD module further comprises a second resistor;

[0010] The first end of the first capacitor is coupled to the gate or the drain through the second resistor.

[0011] Optionally, the first RCD module further comprises a third resistor;

[0012] The second end of the first capacitor is coupled to the drain or the gate through the first diode and the third resistor in sequence.

[0013] Optionally, the first RCD module further comprises a second capacitor;

[0014] The first end of the second capacitor is coupled to the second end of the first capacitor, and the second end of the second capacitor is coupled to the drain or the gate.

[0015] Optionally, the turn-on and turn-off speed control circuit further comprises a second RCD module, and the second RCD module comprises a third capacitor, a fourth resistor and a second diode;

[0016] The first end of the third capacitor is coupled to the gate or the drain, the second end of the third capacitor is coupled to the drain or the gate through the second diode, and the second end of the third capacitor is further coupled to the drain or the gate through the fourth resistor;

[0017] The anode of the first diode is coupled to the second end of the first capacitor, and the cathode of the first diode is coupled to the drain or the gate;

[0018] The anode of the second diode is coupled to the drain or the gate, and the cathode of the second diode is coupled to the second end of the third capacitor.

[0019] Optionally, the second RCD module further comprises a fifth resistor;

[0020] The first end of the third capacitor is coupled to the gate or the drain through the fifth resistor.

[0021] Optionally, the second RCD module further comprises a sixth resistor;

[0022] The second end of the third capacitor is coupled to the drain or the gate through the second diode and the sixth resistor in sequence.

[0023] Optionally, the gate of the power device receives a control signal through a driving resistor.

[0024] According to a second aspect of the present application, an embodiment of the present application provides a power circuit comprising the turn-on and turn-off speed control circuit according to any one of the first aspect of the present application.

[0025] According to a third aspect of the present application, the embodiments of the present application provide an electronic device comprising the turn-on and turn-off speed control circuit according to any one of the first aspect of the present application.

[0026] Compared with the prior art, the technical scheme of the embodiments of the present application has the following beneficial effects:

[0027] In the turn-on and turn-off speed control circuit, the power circuit and the electronic device, the turn-on and turn-off speed control circuit is connected in series between the gate and the drain of the power device, and the turn-on and turn-off speed control circuit comprises a first RCD module. The first end of a first capacitor in the first RCD module is coupled to the gate or the drain, the second end of the first capacitor is coupled to the drain or the gate through a first diode, and the second end of the first capacitor is also coupled to the drain or the gate through a first resistor. Thus, the turn-on and turn-off speed control circuit is used to separately control the turn-on speed or the turn-off speed of the power device, and the switching loss is small, which does not affect the circuit efficiency.

[0028] Further, the turn-on and turn-off speed control circuit further comprises a second RCD module, and the second RCD module comprises a third capacitor, a fourth resistor and a second diode. The first end of the third capacitor is coupled to the gate or the drain, the second end of the third capacitor is coupled to the drain or the gate through the second diode, and the second end of the third capacitor is also coupled to the drain or the gate through the fourth resistor. The anode of the first diode is coupled to the second end of the first capacitor, and the cathode of the first diode is coupled to the drain or the gate. The anode of the second diode is coupled to the drain or the gate, and the cathode of the second diode is coupled to the second end of the third capacitor. Thus, the first RCD module and the second RCD module are used to separately control the turn-on speed and the turn-off speed of the power device, and the switching loss is small, which does not affect the circuit efficiency, and the reliability of the power device is also improved. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical scheme in the embodiments of the present application or the prior art, the drawings needed in the following embodiment or prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0030] Figure 1 is a structural schematic diagram of the turn-on and turn-off speed control circuit in the first embodiment of the prior art;

[0031] Figure 2 is a structural schematic diagram of the turn-on and turn-off speed control circuit in the second embodiment of the prior art;

[0032] Figure 3 is a structure diagram of the turn-on and turn-off speed control circuit in the first embodiment of the present application;

[0033] Figure 4 is a voltage waveform diagram of the power device shown in Figure 3 ;

[0034] Figure 5 is a structure diagram of the turn-on and turn-off speed control circuit in the second embodiment of the present application;

[0035] Figure 6 is a voltage waveform diagram of the power device shown in Figure 5 ;

[0036] Figure 7 is a structure diagram of the turn-on and turn-off speed control circuit in the third embodiment of the present application;

[0037] Figure 8 is a structure diagram of the turn-on and turn-off speed control circuit in the fourth embodiment of the present application;

[0038] Figure 9 is a structure diagram of the turn-on and turn-off speed control circuit in the fifth embodiment of the present application and a voltage waveform diagram of Vds of the circuit in operation;

[0039] Figure 10 is a structure diagram of the turn-on and turn-off speed control circuit in the sixth embodiment of the present application;

[0040] Figure 11 is a structure diagram of the turn-on and turn-off speed control circuit in the seventh embodiment of the present application.

[0041] Reference signs:

[0042] R 驱 - driving resistor;

[0043] M1 - power device;

[0044] 10 - first RCD module;

[0045] 20 - second RCD module;

[0046] C1 - first capacitor;

[0047] C2 - second capacitor;

[0048] C3 - third capacitor;

[0049] D1 - first diode;

[0050] D2 - second diode;

[0051] R1 - first resistor;

[0052] R2 - second resistor;

[0053] R3 - third resistor;

[0054] R4 - fourth resistor;

[0055] R5 - fifth resistor;

[0056] R6 - sixth resistor. DETAILED DESCRIPTION

[0057] The technical solutions in the embodiments of the present application will be apparently and completely described below in conjunction with the drawings of the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those of ordinary skill in the art without any creative effort belong to the protection scope of the present application.

[0058] The terms "first", "second", "third", "fourth" and the like (if any) in the specification and claims of the present application and the above drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or a chronological sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to the process, method, product or device.

[0059] The technical solutions of the present application will be described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes can not be described in some embodiments.

[0060] As described in the background, the prior art is difficult to adjust the switching speed of the power device, reduce the switching loss, and take into account without affecting the circuit efficiency. The following will be described in detail in conjunction with the drawings.

[0061] Please refer to Figure 1 , Figure 1 is a circuit structure schematic diagram for adjusting the switching speed of the power device, in Figure 1 the embodiments, it reduces the switching speed of the power device by increasing the resistance value of the driving resistor R 驱 .

[0062] Referring to Figure 2 , Figure 2 is another circuit structure diagram for adjusting the switching speed of a power device, in Figure 2 the embodiment, the switching speed of the power device is reduced by connecting a capacitor in series between the drain and the source of the tube of the power device.

[0063] Obviously, these methods increase the loss of the power device M1 and reduce the efficiency of the circuit.

[0064] To solve the above problems, the embodiment of the present application provides a turn-on and turn-off speed control circuit, which is connected in series between the gate and the drain of a power device, and the turn-on and turn-off speed control circuit comprises a first RCD module, a first end of a first capacitor in the first RCD module is coupled to the gate or the drain, a second end of the first capacitor is coupled to the drain or the gate through a first diode, and the second end of the first capacitor is also coupled to the drain or the gate through a first resistor. Thus, the present application uses the turn-on and turn-off speed control circuit to control the turn-on speed or the turn-off speed of the power device separately, and the switching loss is small, which does not affect the circuit efficiency.

[0065] In order to make the above-mentioned purposes, features and beneficial effects of the present application more obvious and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the drawings.

[0066] Figure 3 is the turn-on and turn-off speed control circuit of the embodiment of the present application, which is applied to a power device M1, and the turn-on and turn-off speed control circuit is connected in series between the gate and the drain of the power device M1, the turn-on and turn-off speed control circuit comprises a first RCD module 10, and the first RCD module 10 comprises a first capacitor C1, a first resistor R1 and a first diode D1.

[0067] A first end of the first capacitor C1 is coupled to the gate, a second end of the first capacitor C1 is coupled to the drain through the first diode D1, and the second end of the first capacitor C1 is also coupled to the drain through the first resistor R1.

[0068] In Figure 3 the example, the power device M1 is an NMOS tube, of course, the present application is not limited thereto, and the power device M1 can also be a PMOS tube, a silicon carbide (SiC) switch tube, a depletion mode gallium nitride (GaN) switch tube, an enhancement mode gallium nitride switch tube or a gallium oxide switch tube.

[0069] It can be seen that the first RCD module 10 of the present application is equivalent to increasing the Miller capacitance of the power device M1 when the power device M1 is turned on or turned off, so as to achieve the purpose of controlling the turn-on speed or the turn-off speed of the power device M1.

[0070] exist Figure 3 In the example, the positive terminal of the first diode D1 is coupled to the second terminal of the first capacitor C1, and the negative terminal of the first diode D1 is coupled to the drain. In this case, the first RCD module 10 is equivalent to controlling the turn-on speed of the power device M1.

[0071] Specifically, when the power device M1 is turned on (falling edge), the first diode D1 is turned on, which is equivalent to adding a Miller capacitance between the gate and drain of the power device M1, slowing down the rate at which Vds of the power device M1 falls. The first resistor R1 is used to charge the first capacitor C1 to Vds voltage when the power device M1 is turned off, so as to ensure that the power device M1 will work normally when it is turned on again.

[0072] Please continue to refer to this. Figure 4 , Figure 4 It shows Figure 3 The diagram shows the voltage waveform between the drain and source of the power device M1 when it is turned on; where:

[0073] ① This can be understood as the rate of change of the drain-source voltage of the power device M1 when there is no turn-on and turn-off speed control circuit connected in series between the gate and drain of the power device M1.

[0074] ② can be understood as the rate of change of the drain-source voltage of the power device M1 when the first RCD module 10 is connected in series between the gate and drain of the power device M1.

[0075] It can be seen that the first RCD module 10 effectively slows down the rate of Vds decrease, thereby reducing the turn-on speed of the power device M1.

[0076] It should be understood that the direction change of the overall circuit of the first RCD module 10 does not affect the effect. Please refer to... Figure 5 ,exist Figure 5 In the example, the first terminal of the first capacitor C1 is coupled to the drain, and its second terminal is coupled to the gate through the first diode D1. The second terminal of the first capacitor C1 is also coupled to the gate through the first resistor R1.

[0077] Furthermore, this invention does not limit the configuration of the first diode D1; for other examples, please refer to [reference needed]. Figure 5 The anode of the first diode D1 can also be coupled to the drain, and the cathode of the first diode D1 can also be coupled to the second terminal of the first capacitor C1. In this case, the first RCD module 10 is equivalent to controlling the turn-off speed of the power device M1.

[0078] In Figure 5 the example, the gate of the power device M1 receives the control signal through the driving resistor R 驱 of course, the present application is not limited to this, those skilled in the art can choose the required circuit and the element to send the control signal to the gate of the power device M1.

[0079] Please continue to refer to Figure 6 , Figure 6 shows Figure 5 the power device M1 shown in the voltage waveform between the drain (Drain) and the source (Source) when turned on; wherein:

[0080] ③, can be understood as not in the gate and the drain of the power device M1 in series between the opening and closing speed control circuit, the drain-source voltage change speed of the power device M1;

[0081] ④, can be understood as in the gate and the drain of the power device M1 in series first RCD module 10, the drain-source voltage change speed of the power device M1.

[0082] It can be seen that the first RCD module 10 effectively slows down the rising speed of Vds, thereby reducing the turn-off speed of the power device M1.

[0083] The power device M1 provided by the present application with opening and closing speed control circuit can be applied in flyback power supply topology, for example, in the quasi-resonant flyback converter, because the conduction current of the switching power device M1 is theoretically close to zero when it is turned on, a separate opening speed control strategy can be used for the switching power device M1, so that the switching tube is turned on more slowly, and no additional opening loss is introduced in the opening process, thereby not affecting the conversion efficiency. Because the opening speed of the switching power device M1 is reduced in this application, the peak phenomenon of the synchronous rectifier tube caused by the leakage inductance in the topology can be reduced, and the stability and reliability of the system are improved.

[0084] It should be understood that the present application does not limit the application scenario of the power device M1, and the power device M1 provided by the present application can be applied in any power supply topology, and those skilled in the art can also select appropriate circuits for application according to needs.

[0085] Of course, the present application can also control the opening speed and the turn-off speed of the power device M1 at the same time.

[0086] In one embodiment, the first RCD module 10 further comprises a second capacitor C2;

[0087] The first end of the second capacitor C2 is coupled to the second end of the first capacitor C1, and the second end of the second capacitor C2 is coupled to the drain or the gate.

[0088] In a specific embodiment, referring to Figure 7 , the anode of the first diode D1 is coupled to the second end of the first capacitor C1, and the cathode of the first diode D1 is coupled to the drain. Figure 7 In this case, the first diode D1 and the first capacitor C1 adjust the turn-on speed of the power device M1, and the first capacitor C1 and the second capacitor C2 are also used to adjust the turn-off speed of the power device M1.

[0089] In another specific embodiment, referring to Figure 8 , the anode of the first diode D1 is coupled to the drain, and the cathode of the first diode D1 is coupled to the second end of the first capacitor C1. Figure 8 In this case, the first diode D1 and the first capacitor C1 adjust the turn-off speed of the power device M1, and the first capacitor C1 and the second capacitor C2 are also used to adjust the turn-on speed of the power device M1.

[0090] In addition, the application can also increase the RCD module to control the turn-on speed and the turn-off speed of the power device M1 at the same time.

[0091] In an embodiment, the turn-on and turn-off speed control circuit further comprises a second RCD module 20, and the second RCD module 20 comprises a third capacitor C3, a fourth resistor R4, and a second diode D2.

[0092] The first end of the third capacitor C3 is coupled to the gate or the drain, the second end of the third capacitor C3 is coupled to the drain or the gate through the second diode D2, and the second end of the third capacitor C3 is also coupled to the drain or the gate through the fourth resistor R4.

[0093] The anode of the first diode D1 is coupled to the second end of the first capacitor C1, and the cathode of the first diode D1 is coupled to the drain or the gate.

[0094] The anode of the first diode D1 is coupled to the drain or the gate, and the cathode of the first diode D1 is coupled to the second end of the third capacitor C3. Figure 9 In a specific embodiment, referring to , the first end of the third capacitor C3 is coupled to the gate, the second end of the third capacitor C3 is coupled to the drain through the second diode D2, and the second end of the third capacitor C3 is also coupled to the drain through the fourth resistor R4.

[0095] The positive electrode of the first diode D1 is coupled to the second end of the first capacitor C1, and the negative electrode of the first diode D1 is coupled to the drain electrode.

[0096] The positive electrode of the first diode D1 is coupled to the drain electrode, and the negative electrode of the first diode D1 is coupled to the second end of the third capacitor C3.

[0097] It can be seen that the first RCD module 10 and the second RCD module 20 are respectively used to control the turn-on speed and the turn-off speed of the power device M1, the switching loss is small, the circuit efficiency is not affected, and the reliability of the power device M1 is also improved.

[0098] Please continue to refer to Figure 9 , Figure 9 The voltage waveform between the drain and the source of the power device M1 when the power device M1 is turned on is also shown; wherein:

[0099] ⑤It can be understood that when the first RCD module 10 and the second RCD module 20 are connected in series between the gate and the drain of the power device M1, the change speed of the drain-source voltage Vds of the power device M1.

[0100] It can be seen that in the example of Figure 9 Although the power device M1 uses a PMOS tube, the first RCD module 10 and the second RCD module 20 can still control the turn-on speed and the turn-off speed of the power device M1, respectively.

[0101] Now taking the application of the power device M1 as a depletion-mode gallium nitride (D-GaN) as an example, other embodiments of the first RCD module 10 and / or the second RCD module 20 are described. Since the depletion-mode gallium nitride (D-GaN) is a Cascode structure, it has almost no Miller capacitance, which makes the switching speed of the switching tube too fast, which can easily cause reliability and EMI problems. After using the first RCD module 10 and the second RCD module 20 of the application, the depletion-mode gallium nitride is equivalent to adding a bidirectional regulated Miller capacitance, which can significantly improve the reliability.

[0102] In actual use, the first RCD module 10 and / or the second RCD module 20 can also be finely adjusted according to the needs of switching speed and EMI.

[0103] In a preferred embodiment, the first RCD module 10 further comprises a second resistor R2;

[0104] The first end of the first capacitor C1 is coupled to the gate or the drain through the second resistor R2. In one specific embodiment, please refer to Figure 10 The first end of the first capacitor C1 is coupled to the gate through the second resistor R2.

[0105] In one preferred embodiment, the second RCD module 20 further comprises a fifth resistor R5;

[0106] The first end of the third capacitor C3 is coupled to the gate or the drain through the fifth resistor R5.

[0107] In one specific embodiment, please refer to Figure 10 The first end of the third capacitor C3 is coupled to the gate through the fifth resistor R5.

[0108] In another preferred embodiment, the first RCD module 10 further comprises a third resistor R3;

[0109] The second end of the first capacitor C1 is coupled to the drain or the gate through the first diode D1 and the third resistor R3 in sequence. In one specific embodiment, please refer to Figure 11 The second end of the first capacitor C1 is coupled to the drain through the first diode D1 and the third resistor R3 in sequence.

[0110] In one preferred embodiment, the second RCD module 20 can further comprise a sixth resistor R6;

[0111] The second end of the third capacitor C3 is coupled to the drain or the gate through the second diode D2 and the sixth resistor R6 in sequence. In one specific embodiment, please refer to Figure 11 In the example of Figure 11 The second end of the third capacitor C3 is coupled to the drain through the second diode D2 and the sixth resistor R6 in sequence.

[0112] It can be seen that Figure 10 and Figure 11 The first RCD module 10 and / or the second RCD module 20 in

[0113] It should be understood that in actual implementation, the layout of the first RCD module 10 and / or the second RCD module 20 can be in various ways. Specifically, the first RCD module 10 and / or the second RCD module 20 can be placed separately outside the power device M1, can be integrated completely or partially into the inside of the power device M1, or can be directly embedded into the inside of the power device M1 by a semiconductor process to form an integrated structure. The present application does not limit this, as long as the structure that the first RCD module 10 and / or the second RCD module 20 is connected in series between the gate and the drain of the power device M1 is within the protection scope of the present application.

[0114] In summary, the embodiment of the present application connects the turn-on and turn-off speed control circuit in series between the gate and the drain of the power device, and the turn-on and turn-off speed control circuit includes the first RCD module, the first end of the first capacitor in the first RCD module is coupled to the gate or the drain, the second end of the first capacitor is coupled to the drain or the gate through the first diode, and the second end of the first capacitor is also coupled to the drain or the gate through the first resistor. Thus, the present application uses the turn-on and turn-off speed control circuit to separately control the turn-on speed or the turn-off speed of the power device, and the switching loss is small, which does not affect the circuit efficiency.

[0115] In addition, the present application also provides a power circuit including the turn-on and turn-off speed control circuit of any one of the above. As an example, the power circuit is a flyback power supply topology and the like, and the present application does not limit this.

[0116] In addition, the present application also provides an electronic device including the turn-on and turn-off speed control circuit of any one of the above. As an example, the electronic device can be a power supply device and the like, and the present application does not limit this.

[0117] Although the present application is disclosed as above, the present application is not limited thereto. Any person skilled in the art can make various modifications and changes without departing from the spirit and scope of the present application, and the protection scope of the present application should be limited by the scope defined by the claims.

[0118] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A circuit for controlling the on and off speeds, characterized in that, Applied to power devices, the turn-on and turn-off speed control circuit is connected in series between the gate and drain of the power device. The turn-on and turn-off speed control circuit includes a first RCD module, which includes a first capacitor, a first resistor, and a first diode. The first terminal of the first capacitor is coupled to the gate or the drain, and its second terminal is coupled to the drain or the gate through the first diode. The second terminal of the first capacitor is also coupled to the drain or the gate through the first resistor. The power devices are NMOS transistors, PMOS transistors, silicon carbide switching transistors, depletion-mode gallium nitride switching transistors, enhancement-mode gallium nitride switching transistors, or gallium oxide switching transistors. The first RCD module is used to increase the Miller capacitance of the power device when the power device is turned on or off; The on / off speed control circuit also includes a second RCD module, which includes a third capacitor, a fourth resistor, and a second diode. The first terminal of the third capacitor is coupled to the gate or the drain, and its second terminal is coupled to the drain or the gate through the second diode. The second terminal of the third capacitor is also coupled to the drain or the gate through the fourth resistor. Wherein, the positive terminal of the first diode is coupled to the second terminal of the first capacitor, and the negative terminal of the first diode is coupled to the drain or the gate; The positive terminal of the second diode is coupled to the drain or the gate, and the negative terminal of the second diode is coupled to the second terminal of the third capacitor.

2. The on / off speed control circuit as described in claim 1, characterized in that, The first RCD module also includes a second resistor; The first terminal of the first capacitor is coupled to the gate or the drain via the second resistor.

3. The on / off speed control circuit as described in claim 1, characterized in that, The first RCD module also includes a third resistor; The second terminal of the first capacitor is coupled to the drain or the gate in sequence through the first diode and the third resistor.

4. The on / off speed control circuit as described in claim 1, characterized in that, The first RCD module also includes a second capacitor; The first terminal of the second capacitor is coupled to the second terminal of the first capacitor, and the second terminal of the second capacitor is coupled to the drain or the gate.

5. The on / off speed control circuit as described in claim 1, characterized in that, The second RCD module also includes a fifth resistor; The first terminal of the third capacitor is coupled to the gate or the drain via the fifth resistor.

6. The on / off speed control circuit as described in claim 1, characterized in that, The second RCD module also includes a sixth resistor; The second terminal of the third capacitor is coupled to the drain or the gate in sequence through the second diode and the sixth resistor.

7. The on / off speed control circuit as described in claim 1, characterized in that, The gate of the power device receives control signals through a drive resistor.

8. A power circuit, characterized in that, Includes the on / off speed control circuit as described in any one of claims 1 to 7.

9. An electronic device, characterized in that, Includes the on / off speed control circuit as described in any one of claims 1 to 7.

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