Power synthesis device and radio frequency power supply system

Abstract

The invention provides a power synthesis device and a radio frequency power supply system. The power synthesis device comprises an input end, an output end, N-1 phase shift control circuits, N radio frequency power amplifiers and a power synthesizer. The N-1 phase shift control circuits are connected between the input end and the N-1 phase shift radio frequency power amplifiers in a one-to-one correspondence mode, the N-1 phase shift radio frequency power amplifiers are connected with the power combiner, and the reference radio frequency power amplifier is connected between the input end and the power combiner. Each phase shift control circuit is used for selectively moving or not moving the phase angle of the initial radio frequency signal to obtain a target radio frequency signal, and each radio frequency power amplifier is used for performing power amplification on the target radio frequency signal or the initial radio frequency signal to obtain sub radio frequency electric energy. And the power combiner is used for carrying out power synthesis on the sub radio frequency electric energy obtained by each radio frequency power amplifier to obtain radio frequency electric energy. According to the invention, power synthesis of multiple sub radio frequency electric energy can be realized.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a power synthesis device and a radio frequency power supply system. Background Art

[0002] At present, with the rapid development of RF power technology, the requirements for RF power systems that provide power for loads such as plasma loads are becoming more and more stringent, especially RF power systems often need to provide high-power RF power supply. In the current research on power synthesis, due to the different degrees of phase shift of the initial RF signal when it is power amplified separately, it is impossible to synthesize the required high-power RF power. Therefore, how to achieve power synthesis of multiple sub-RF power to obtain the high-power RF power required by the load has become a problem that needs to be considered. Summary of the invention

[0003] The present application provides a power synthesis device and a radio frequency power supply system, which can realize power synthesis of multiple sub-radio frequency electrical energies to obtain high-power radio frequency electrical energy required by a load.

[0004] In a first aspect, a power synthesis device is provided, the power synthesis device comprising an input end, an output end, N-1 phase shift control circuits, N radio frequency power amplifiers and a power synthesizer, wherein the N radio frequency power amplifiers include a reference radio frequency power amplifier and N-1 phase shift radio frequency power amplifiers, N≥2. The input end is used to connect to a signal source to receive an initial radio frequency signal output by the signal source. The N-1 phase shift control circuits are connected one-to-one between the input end and the N-1 phase shift radio frequency power amplifiers, the N-1 phase shift radio frequency power amplifiers are connected to the power synthesizer, and the reference radio frequency power amplifier is connected between the input end and the power synthesizer, wherein each phase shift control circuit is used to selectively move or not move the phase angle of the initial radio frequency signal to obtain a target radio frequency signal, and each radio frequency power amplifier is used to power amplify the target radio frequency signal or the initial radio frequency signal to obtain sub-radio frequency electric energy. The power synthesizer is connected to the output end, and the power synthesizer is used to power synthesize the sub-radio frequency electric energy obtained by each radio frequency power amplifier to obtain radio frequency electric energy. The output end is used to be connected to a load to output radio frequency electrical energy to the load.

[0005] In one possible embodiment, each phase shift control circuit is used to selectively move or not move the phase angle of the initial RF signal at least based on the phase angle of the sub-RF power energy obtained by the reference RF power amplifier to obtain a target RF signal with a target phase angle, so that the phase angles of the sub-RF power energy obtained by the N-1 phase shift RF power amplifiers based on the target RF signal with the target phase angle are equal to the phase angle of the sub-RF power energy obtained by the reference RF power amplifier.

[0006] In a possible implementation, the power synthesis device further includes a phase difference acquisition unit and a control unit, wherein the phase difference acquisition unit is connected to the N RF power amplifiers and the control unit, and the control unit is connected to the N-1 phase shift control circuits. The phase difference acquisition unit is used to acquire N-1 first phase differences, each of which is the phase difference between the phase angle of the sub-RF power obtained by the reference RF power amplifier and the phase angle of the sub-RF power obtained by the corresponding phase shift RF power amplifier. The control unit is used to control the corresponding phase shift control circuit to selectively move or not move the phase angle of the initial RF signal according to each first phase difference, so as to obtain a target RF signal with a target phase angle.

[0007] In a possible implementation, each phase shift control circuit includes a first phase shift unit and a second phase shift unit, wherein the first phase shift unit and the second phase shift unit are sequentially connected between the input end and the corresponding phase shift RF power amplifier. The first phase shift unit is used to selectively move or not move the phase angle of the initial RF signal to obtain an intermediate RF signal. The second phase shift unit is used to selectively move or not move the phase angle of the intermediate RF signal to obtain a target RF signal with a target phase angle.

[0008] In a possible implementation manner, the first phase shift unit is used to selectively be in a first connection state or a second connection state, so as to correspondingly move or not move the phase angle of the initial RF signal. The second phase shift unit is used to selectively be in a third connection state or a fourth connection state, so as to correspondingly move or not move the phase angle of the intermediate RF signal. The control unit is used to control the corresponding first phase shift unit to be in the first connection state or the second connection state according to each first phase difference, and to control the corresponding second phase shift unit to be in the third connection state or the fourth connection state.

[0009] In a possible implementation, the control unit is used to control the corresponding first phase shift unit to be in the first connection state and the corresponding second phase shift unit to be in the fourth connection state when any first phase difference is not equal to zero, or to control the corresponding first phase shift unit to be in the second connection state and the corresponding second phase shift unit to be in the third connection state; when any first phase difference is equal to zero, the corresponding first phase shift unit is controlled to be in the second connection state and the corresponding second phase shift unit is controlled to be in the fourth connection state.

[0010] In a possible implementation, the first phase shift unit further has a variable first phase shift parameter, and when the first phase shift unit is in the first connection state, the shift angle of the phase angle of the initial RF signal by the first phase shift unit changes according to the change of the first phase shift parameter. The second phase shift unit further has a variable second phase shift parameter, and when the second phase shift unit is in the third connection state, the shift angle of the phase angle of the intermediate RF signal by the second phase shift unit changes according to the change of the second phase shift parameter. The control unit is also used to adjust the first phase shift parameter of the corresponding first phase shift unit according to the non-zero first phase difference when any first phase difference is not equal to zero, or adjust the second phase shift parameter of the corresponding second phase shift unit.

[0011] In a possible implementation manner, the power values ​​of the sub-RF electric energies obtained by each RF power amplifier are equal.

[0012] In a possible implementation, each RF power amplifier has a phase shift error angle, and the average value of the phase shift error angles of the N RF power amplifiers is an average phase shift error angle. Among them, one of the RF power amplifiers with the smallest difference between the phase shift error angle and the average phase shift error angle is the reference RF power amplifier.

[0013] In the second aspect, a radio frequency power supply system is also provided, the radio frequency power supply system includes a signal source and a power synthesizer. The power synthesizer includes an input end, an output end, N-1 phase shift control circuits, N radio frequency power amplifiers and a power synthesizer, wherein the N radio frequency power amplifiers include a reference radio frequency power amplifier and N-1 phase shift radio frequency power amplifiers, N≥2. The input end is used to connect to the signal source to receive the initial radio frequency signal output by the signal source. The N-1 phase shift control circuits are connected one-to-one between the input end and the N-1 phase shift radio frequency power amplifiers, the N-1 phase shift radio frequency power amplifiers are connected to the power synthesizer, and the reference radio frequency power amplifier is connected between the input end and the power synthesizer, wherein each phase shift control circuit is used to selectively move or not move the phase angle of the initial radio frequency signal to obtain a target radio frequency signal, and each radio frequency power amplifier is used to power amplify the target radio frequency signal or the initial radio frequency signal to obtain sub-radio frequency electrical energy. The power synthesizer is connected to the output end, and is used to synthesize the sub-RF power energy obtained by each RF power amplifier to obtain RF power. The output end is used to connect to a load to output RF power to the load.

[0014] The power synthesis device and RF power supply system of the present application can obtain the target RF signal by setting N-1 phase shift control circuits to selectively move or not move the phase angle of the initial RF signal, and then amplify the target RF signal or the initial RF signal through N RF power amplifiers to obtain sub-RF electric energy. Then, the power synthesizer can perform power synthesis on the sub-RF electric energy obtained by each RF power amplifier to achieve power synthesis of multiple sub-RF electric energies to obtain the high-power RF electric energy required by the load. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the drawings required for use in the embodiments of the present application or the background technology will be described below.

[0016] Figure 1 It is a block diagram of a power synthesis device in some embodiments of the present application.

[0017] Figure 2 Another block diagram of a power synthesis device in some embodiments of the present application.

[0018] Figure 3 It is a block diagram of a phase shift control circuit in some embodiments of the present application.

[0019] Figure 4 Schematic diagram of a phase shift control circuit in an embodiment of the present application.

[0020] Figure 5 FIG. 4 is a circuit diagram of a phase shift control circuit in another embodiment of the present application.

[0021] Figure 6 It is a block diagram of a power combiner in some embodiments of the present application.

[0022] Figure 7 FIG. 4 is a circuit diagram of a power combiner in an embodiment of the present application.

[0023] Figure 8 It is a block diagram of a radio frequency power supply system in some embodiments of the present application.

[0024] Description of the accompanying drawings: 1000, RF power supply system, SS, signal source, RF1, initial RF signal, 10, power synthesis device, 100, phase shift control circuit, 110, first phase shift unit, R1, first resistor, C1, first capacitor, S1, first switch, S3, third switch, S4, fourth switch, RF2, intermediate RF signal, 120, second phase shift unit, R2, second resistor, C2, second capacitor, S2, second switch, RF3, target RF signal, PA, RF power amplifier, PA1, reference RF power amplifier, PA2, phase shift RF power amplifier, RF4, sub-RF power, 200, power Synthesizer, 210, first power synthesis module, D1, first diode, D2, second diode, T1, first transformer, W1, first winding, W2, second winding, 220, second power synthesis module, D3, third diode, D4, fourth diode, T2, second transformer, W3, third winding, W4, fourth winding, RF+, positive half-cycle radio frequency power, RF-, negative half-cycle radio frequency power, RF5, radio frequency power, 300, phase difference acquisition unit, A1, first phase difference, 400, control unit, In, input end, Out, output end, E1, first potential, E2, second potential, GND, ground, RL, load. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0026] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0027] In the following, the terms "first", "second", "third", and "fourth" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", "third", and "fourth" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, unless otherwise specified, "multiple" means two or more.

[0028] In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such process, method, product, or device.

[0029] See also Figure 1 , Figure 1 FIG. 1 is a block diagram of a power synthesis device in some embodiments of the present application. Figure 1As shown, the present application provides a power synthesis device 10, which includes an input terminal In, an output terminal Out, N-1 phase shift control circuits 100, N RF power amplifiers PA and a power synthesizer 200, wherein the N RF power amplifiers PA include a reference RF power amplifier PA1 and N-1 phase shift RF power amplifiers PA2, N≥2. The input terminal In is used to connect to a signal source SS to receive an initial RF signal RF1 output by the signal source SS. N-1 phase shift control circuits 100 are connected one by one between the input terminal In and the N-1 phase shift RF power amplifiers PA2, and the N-1 phase shift RF power amplifiers PA2 are connected to the power synthesizer 200. The reference RF power amplifier PA1 is connected between the input terminal In and the power synthesizer 200, wherein each phase shift control circuit 100 is used to selectively move or not move the phase angle of the initial RF signal RF1 to obtain the target RF signal RF3, and each RF power amplifier PA is used to power amplify the target RF signal RF3 or the initial RF signal RF1 to obtain the sub-RF power RF4. The power synthesizer 200 is also connected to the output terminal Out, and the power synthesizer 200 is used to power synthesize the sub-RF power RF4 obtained by each RF power amplifier PA to obtain RF power RF5. The output terminal Out is used to be connected to the load RL to output the RF power RF5 to the load RL.

[0030] Therefore, the above-mentioned power synthesis device 10 in the present application can obtain the target RF signal RF3 by setting N-1 phase shift control circuits 100 to selectively move or not move the phase angle of the initial RF signal RF1, and then use N RF power amplifiers PA to power amplify the target RF signal RF3 or the initial RF signal RF1 to obtain sub-RF power RF4. Then, the power synthesizer 200 can power synthesize the sub-RF power RF4 obtained by each RF power amplifier PA to achieve power synthesis of multiple sub-RF power RF4 to obtain the high-power RF power RF5 required by the load RL.

[0031] In one or more embodiments, the reference RF power amplifier PA1 and each phase-shifted RF power amplifier PA2 may include a Class D RF power amplifier, a Class E RF power amplifier, or other types of RF power amplifiers, but the present application is not limited thereto.

[0032] In one or more embodiments, the power combiner 200 may include a power combining circuit composed of passive components such as inductors and capacitors, or may include a power combining circuit composed of other passive components, but the present application is not limited thereto.

[0033] It should be noted that the sub-RF power RF4 can also be regarded as an RF signal with a target power value, but the power value of the sub-RF power RF4 is larger than that of the initial RF signal RF1 or the target RF signal RF3. Therefore, the phase angle of the sub-RF power RF4 is also the phase angle of the RF signal with the target power value.

[0034] In one or more embodiments, each phase shift control circuit 100 is used to selectively move or not move the phase angle of the initial RF signal RF1 at least based on the phase angle of the sub-RF power RF4 obtained by the reference RF power amplifier PA1 to obtain a target RF signal RF3 with a target phase angle, so that the phase angles of the sub-RF power RF4 obtained by the N-1 phase shift RF power amplifiers PA2 based on the target RF signal RF3 with the target phase angle are equal to the phase angle of the sub-RF power RF4 obtained by the reference RF power amplifier PA1.

[0035] Therefore, the above-mentioned power synthesis device 10 in the present application, by configuring each phase shift control circuit 100 to selectively move or not move the phase angle of the initial RF signal RF1 at least according to the phase angle of the sub-RF power RF4 obtained by the reference RF power amplifier PA1, to obtain the target RF signal RF3 with the target phase angle, so that the phase angle of the sub-RF power RF4 obtained by N-1 phase shift RF power amplifiers PA2 can be equal to the phase angle of the sub-RF power RF4 obtained by the reference RF power amplifier PA1, that is, the phase angle of each sub-RF power RF4 is the same, thereby realizing power synthesis of multiple sub-RF power RF4 to obtain the high-power RF power RF5 required by the load RL.

[0036] In particular, when the phase angle of any sub-RF power RF4 is different from the phase angle of other sub-RF power RF4, the RF power RF5 obtained by power synthesis of multiple sub-RF power RF4 will not be able to reach the expected power value, and the RF power RF5 will also contain noise, thereby failing to meet the requirements of the load RL.

[0037] See also Figure 2 , Figure 2 FIG. 1 is another block diagram of a power synthesis device in some embodiments of the present application. Figure 2As shown, the power synthesis device 10 also includes a phase difference acquisition unit 300 and a control unit 400. The phase difference acquisition unit 300 is connected to N RF power amplifiers PA and the control unit 400, and the control unit 400 is connected to N-1 phase shift control circuits 100. The phase difference acquisition unit 300 is used to acquire N-1 first phase differences A1, each of which is the phase difference between the phase angle of the sub-RF power RF4 obtained by the reference RF power amplifier PA1 and the phase angle of the sub-RF power RF4 obtained by the corresponding phase shift RF power amplifier PA2. The control unit 400 is used to control the corresponding phase shift control circuit 100 to selectively move or not move the phase angle of the initial RF signal RF1 according to each first phase difference A1, so as to obtain a target RF signal RF3 with a target phase angle.

[0038] Thus, the above-mentioned power synthesis device 10 in the present application can determine the difference between the phase shift degree of the corresponding phase-shifted RF power amplifier PA2 and the phase shift degree of the reference RF power amplifier PA1 by setting the phase difference acquisition unit 300 to acquire the phase difference between the phase angle of the sub-RF power RF4 obtained by the reference RF power amplifier PA1 and the phase angle of the sub-RF power RF4 obtained by the corresponding phase-shifted RF power amplifier PA2, and then by setting the control unit 400 to control the corresponding phase shift control circuit 100 to selectively move or not move the phase angle of the initial RF signal RF1 according to such N-1 first phase differences A1, a target RF signal RF3 with a target phase angle can be obtained, thereby effectively solving the difference between the phase shift degrees of the N RF power amplifiers PA and avoiding problems in subsequently providing RF power RF5 to the load RL.

[0039] In particular, even if each RF power amplifier PA has the same circuit structure, it may have different phase shift degrees, that is, the phase angles of the signals obtained by each RF power amplifier PA for power amplifying the signals with the same phase angle may be different from each other. Moreover, the phase shift degree of each RF power amplifier PA may also change during operation.

[0040] In one or more embodiments, the phase difference acquisition unit 300 may include N voltage sensors, N operational amplifiers, and N-1 logic devices such as XOR gates to obtain N-1 first phase differences A1. Each voltage sensor is used to obtain the sub-RF power RF4 obtained by the reference RF power amplifier PA1 and the sub-RF power RF4 obtained by the corresponding phase-shifted RF power amplifier PA2, and each operational amplifier is used to convert the sub-RF power RF4 obtained by the reference RF power amplifier PA1 and the sub-RF power RF4 obtained by the corresponding phase-shifted RF power amplifier PA2 into square waves, and each logic device such as XOR gates performs logic operations on the sub-RF power RF4 obtained by the reference RF power amplifier PA1 of the square wave and the sub-RF power RF4 obtained by the corresponding phase-shifted RF power amplifier PA2 to obtain N-1 first phase differences A1.

[0041] Please also read Figure 3 , Figure 3 FIG. 1 is a block diagram of a phase shift control circuit in some embodiments of the present application. Figure 2 , Figure 3 As shown, each phase shift control circuit 100 includes a first phase shift unit 110 and a second phase shift unit 120, and the first phase shift unit 110 and the second phase shift unit 120 are sequentially connected between the input terminal In and the corresponding phase shift RF power amplifier PA2. The first phase shift unit 110 is used to selectively move or not move the phase angle of the initial RF signal RF1 to obtain the intermediate RF signal RF2. The second phase shift unit 120 is used to selectively move or not move the phase angle of the intermediate RF signal RF2 to obtain the target RF signal RF3 with a target phase angle.

[0042] Therefore, the power synthesis device 10 in the present application can provide a variety of modulation modes according to specific needs by setting the first phase shift unit 110 and the second phase shift unit 120 to modulate the phase angle of the initial RF signal RF1 in sequence, and finally obtain the target RF signal RF3 with the target phase angle.

[0043] In one or more embodiments, the first phase shift unit 110 is used to selectively be in the first connection state or the second connection state, so as to correspondingly move or not move the phase angle of the initial radio frequency signal RF1. The second phase shift unit 120 is used to selectively be in the third connection state or the fourth connection state, so as to correspondingly move or not move the phase angle of the intermediate radio frequency signal RF2. The control unit 400 is used to control the corresponding first phase shift unit 110 to be in the first connection state or the second connection state according to each first phase difference A1, and control the corresponding second phase shift unit 120 to be in the third connection state or the fourth connection state.

[0044] Thus, the power synthesis device 10 in the present application, by setting the first phase shift unit 110 and the second phase shift unit 120 to have two different connection states, and configuring the control unit 400 to control the first phase shift unit 110 and the second phase shift unit 120 to be in two different connection states according to each first phase difference A1, can be in the corresponding connection state as needed.

[0045] In one or more embodiments, when the first phase shift unit 110 is in the first connection state, the first phase shift unit 110 moves the phase angle of the initial RF signal RF1 in a first direction. When the second phase shift unit 120 is in the third connection state, the second phase shift unit 120 moves the phase angle of the intermediate RF signal RF2 in a second direction. The first direction and the second direction are opposite.

[0046] In one or more embodiments, the first direction may be a direction that causes the phase angle of the initial RF signal RF1 to advance, and correspondingly, the second direction is a direction that causes the phase angle of the initial RF signal RF1 to lag. The first direction may also be a direction that causes the phase angle of the initial RF signal RF1 to lag, and correspondingly, the second direction is a direction that causes the phase angle of the initial RF signal RF1 to advance.

[0047] Further, when the first phase shift unit 110 is in the second connection state, the first phase shift unit 110 does not shift the phase angle of the initial RF signal RF1. When the second phase shift unit 120 is in the fourth connection state, the second phase shift unit 120 does not shift the phase angle of the intermediate RF signal RF2.

[0048] It should be noted that when the first phase shift unit 110 does not move the phase angle of the initial RF signal RF1, the phase angle of the intermediate RF signal RF2 obtained is the same as the phase angle of the initial RF signal RF1. When the second phase shift unit 120 does not move the phase angle of the intermediate RF signal RF2, the phase angle of the target RF signal RF3 obtained is the same as the phase angle of the intermediate RF signal RF2.

[0049] In one or more embodiments, the control unit 400 is used to control the corresponding first phase shift unit 110 to be in the first connection state and the corresponding second phase shift unit 120 to be in the fourth connection state when any first phase difference A1 is not equal to zero, or to control the corresponding first phase shift unit 110 to be in the second connection state and the corresponding second phase shift unit 120 to be in the third connection state; when any first phase difference A1 is equal to zero, the corresponding first phase shift unit 110 is controlled to be in the second connection state and the corresponding second phase shift unit 120 is controlled to be in the fourth connection state.

[0050] Therefore, the power synthesis device 10 in the present application is specifically configured to control the control unit 400 to control the first phase shift unit 110 and the second phase shift unit 120 to be in a corresponding connection state according to whether the N-1 first phase differences A1 are zero.

[0051] Further, the control unit 400 is used to control the corresponding first phase shift unit 110 to be in the first connection state, and control the corresponding second phase shift unit 120 to be in the fourth connection state when any first phase difference A1 is greater than zero, and control the corresponding first phase shift unit 110 to be in the second connection state, and control the corresponding second phase shift unit 120 to be in the third connection state when any first phase difference A1 is less than zero. Alternatively, the control unit 400 is used to control the corresponding first phase shift unit 110 to be in the first connection state, and control the corresponding second phase shift unit 120 to be in the fourth connection state when any first phase difference A1 is less than zero, and control the corresponding first phase shift unit 110 to be in the second connection state, and control the corresponding second phase shift unit 120 to be in the third connection state when any first phase difference A1 is greater than zero.

[0052] In one or more embodiments, the phase shift accuracy of each first phase shift unit 110 is different from the phase shift accuracy of the corresponding second phase shift unit 120. The control unit 400 can be used to control the corresponding first phase shift unit 110 to be in the first connection state and control the corresponding second phase shift unit 120 to be in the third connection state when any first phase difference A1 is not equal to zero.

[0053] Therefore, the above-mentioned power synthesis device 10 in the present application can simultaneously make the first phase shift unit 110 in the first connection state, and make the corresponding second phase shift unit 120 in the third connection state, so as to solve the phase shift difference of the initial RF signal RF1 in the power amplification process of different RF power amplifiers PA to the greatest extent through different phase shift accuracies.

[0054] In one or more embodiments, the first phase shift unit 110 further has a variable first phase shift parameter. When the first phase shift unit 110 is in the first connection state, the shift angle of the phase angle of the initial RF signal RF1 by the first phase shift unit 110 changes according to the change of the first phase shift parameter. The second phase shift unit 120 further has a variable second phase shift parameter. When the second phase shift unit 120 is in the third connection state, the shift angle of the phase angle of the intermediate RF signal RF2 by the second phase shift unit 120 changes according to the change of the second phase shift parameter. The control unit 400 is also used to adjust the first phase shift parameter of the corresponding first phase shift unit 110 according to the non-zero first phase difference A1 when any first phase difference A1 is not equal to zero, or adjust the second phase shift parameter of the corresponding second phase shift unit 120.

[0055] Therefore, the power synthesis device 10 in the present application can change the shift angle according to specific circumstances by configuring the first phase shift unit 110 to have a variable first phase shift parameter and the second phase shift unit 120 to have a variable second phase shift parameter.

[0056] The phase shift accuracy of each first phase shift unit 110 is the minimum change amount of the first phase shift parameter, and the phase shift accuracy of each second phase shift unit 120 is the minimum change amount of the second phase shift parameter.

[0057] Furthermore, the control unit 400 may also be configured to adjust the first phase shift parameter of the corresponding first phase shift unit 110 and the second phase shift parameter of the corresponding second phase shift unit 120 according to the non-zero first phase difference A1 when any first phase difference A1 is not equal to zero.

[0058] Please also read Figure 4 , Figure 4 FIG. 1 is a circuit diagram of a phase shift control circuit in an embodiment of the present application. Figure 3 , Figure 4 As shown, each first phase shift unit 110 includes a first resistor R1, a first capacitor C1 and a first switch S1, the first resistor R1 and the first capacitor C1 are connected between the input terminal In and the ground GND in sequence, the connection point between the first resistor R1 and the first capacitor C1 is connected to the corresponding second phase shift unit 120, and the two ends of the first switch S1 are correspondingly connected to the two ends of the first resistor R1. Among them, the first switch S1 is used to be selectively in an on or off state, so as to correspondingly make the first phase shift unit 110 selectively in the second connection state or the first connection state.

[0059] Specifically, the phase difference between the phase angle of the intermediate radio frequency signal RF2 and the phase angle of the initial radio frequency signal RF1 satisfies a first preset relationship, and the first preset relationship may be -tan -1 (R1×C1×ω), that is, the phase difference between the phase angle of the initial RF signal RF1 and the phase angle of the intermediate RF signal RF2 is related to the resistance value of the first resistor R1, the capacitance value of the first capacitor C1 and the angular frequency of the initial RF signal RF1, that is, the shift angle of the phase angle of the initial RF signal RF1 by each first phase shift unit 110 is -tan -1 (R1×C1×ω), the first phase shift parameter of each first phase shift unit 110 is related to the resistance value of the first resistor R1, the capacitance value of the first capacitor C1, and the angular frequency of the initial RF signal RF1.

[0060] Furthermore, the first resistor R1 has an adjustable resistance value and / or the first capacitor C1 has an adjustable capacitance value, and the first phase shift parameter of the corresponding first phase shift unit 110 is changed by adjusting the resistance value of the first resistor R1 and / or the capacitance value of the first capacitor C1. Figure 4 As shown, the first capacitor C1 may be an adjustable capacitor to have an adjustable capacitance value.

[0061] Please also read Figure 5 , Figure 5 FIG. 1 is a circuit diagram of a phase shift control circuit in another embodiment of the present application. Figure 3 , Figure 5 As shown, each first phase shift unit 110 may also include a first resistor R1, a first capacitor C1, a third switch S3 and a fourth switch S4, wherein the first resistor R1, the first capacitor C1 and the fourth switch S4 are sequentially connected between the input terminal In and the ground GND, the connection point between the first resistor R1 and the first capacitor C1 is connected to the corresponding second phase shift unit 120, and the two ends of the third switch S3 are correspondingly connected to the two ends of the first capacitor C1. The third switch S3 and the fourth switch S4 are used to selectively be in the on or off state at the same time, so as to correspondingly make the first phase shift unit 110 selectively in the second connection state or the first connection state. That is, when the third switch S3 and the fourth switch S4 are both in the on state, the corresponding first phase shift unit 110 is selectively in the second connection state, and when the third switch S3 and the fourth switch S4 are both in the off state, the corresponding first phase shift unit 110 is selectively in the first connection state.

[0062] like Figure 3 , Figure 4 , Figure 5 As shown, each second phase shift unit 120 includes a second resistor R2, a second capacitor C2 and a second switch S2, the second capacitor C2 and the second resistor R2 are sequentially connected between the corresponding first phase shift unit 110 and the ground GND, the connection point between the second capacitor C2 and the second resistor R2 is connected to the corresponding phase shift RF power amplifier PA2, and the two ends of the second switch S2 are correspondingly connected to the two ends of the second capacitor C2. Among them, the second switch S2 is used to be selectively in an on or off state, so as to correspondingly make the second phase shift unit 120 selectively in the fourth connection state or the third connection state.

[0063] Specifically, the phase difference between the phase angle of the target RF signal RF3 and the phase angle of the intermediate RF signal RF2 satisfies a second preset relationship, and the second preset relationship may be tan -1(1 / R2×C2×ω), that is, the phase difference between the phase angle of the target RF signal RF3 and the phase angle of the intermediate RF signal RF2 is related to the resistance value of the second resistor R2, the capacitance value of the second capacitor C2 and the angular frequency of the intermediate RF signal RF2, that is, the shift angle of the phase angle of the intermediate RF signal RF2 by each second phase shift unit 120 is tan -1 (1 / R2×C2×ω), the second phase shift parameter of each second phase shift unit 120 is related to the resistance value of the second resistor R2, the capacitance value of the second capacitor C2, and the angular frequency of the intermediate RF signal RF2.

[0064] Thus, the power synthesis device 10 in the present application is configured such that each first phase shift unit 110 and each second phase shift unit 120 include electronic devices such as capacitors, resistors, switches, etc., and configure corresponding connection relationships, so that each first phase shift unit 110 can selectively move or not move the phase angle of the initial RF signal RF1 in the first direction, and the first direction corresponds to a direction in which the phase angle of the initial RF signal RF1 lags, and at the same time, other waveform parameters of the initial RF signal RF1 are not affected, and the other waveform parameters may include waveform, frequency, etc., and each second phase shift unit 120 can selectively move or not move the phase angle of the intermediate RF signal RF2 in the second direction, and the second direction corresponds to a direction in which the phase angle of the intermediate RF signal RF2 is advanced, and at the same time, other waveform parameters of the intermediate RF signal RF2 are not affected, and the other waveform parameters may include waveform, frequency, etc.

[0065] Further, the second resistor R2 has an adjustable resistance value and / or the second capacitor C2 has an adjustable capacitance value, and the second phase shift parameter of the corresponding second phase shift unit 120 is changed by adjusting the resistance value of the second resistor R2 and / or the capacitance value of the second capacitor C2. Figure 5 As shown, the second capacitor C2 may be an adjustable capacitor to have an adjustable capacitance value.

[0066] In one or more embodiments, Figure 2 The control unit 400 shown in FIG. Figure 4 , Figure 5 One or more of the first switch S1, the second switch S2, the third switch S3 and the fourth switch S4 shown are turned on or off to control the corresponding first phase shift unit 110 to be in the first connection state or the second connection state, and to control the corresponding second phase shift unit 120 to be in the third connection state or the fourth connection state.

[0067] In one or more embodiments, Figure 2 The control unit 400 shown in FIG. Figure 4 , Figure 5The capacitance value of the first capacitor C1 and / or the capacitance value of the second capacitor C2 are shown to correspondingly adjust the first phase shift parameter of the first phase shift unit 110 and / or the second phase shift parameter of the second phase shift unit 120 .

[0068] In one or more embodiments, the control unit 400 can be a general-purpose processor such as a central processing unit (CPU), or a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate logic devices, transistor logic devices and other logic control devices, or a microprocessor such as a micro control unit (MCU).

[0069] In one or more embodiments, the power value of the sub-RF power RF4 obtained by each RF power amplifier PA is equal.

[0070] Therefore, in the power synthesis device 10 in the present application, the power value of the sub-RF power RF4 obtained by each RF power amplifier PA is equal, so that the subsequent power synthesizer 200 can perform power synthesis on each sub-RF power RF4 to obtain RF power RF5.

[0071] In one or more embodiments, each RF power amplifier PA has a phase error angle, and the average value of the phase error angles of N RF power amplifiers PA is an average phase error angle. Among them, one of the RF power amplifiers PA with the smallest difference between the phase error angle and the average phase error angle is the reference RF power amplifier PA1.

[0072] Therefore, in the above-mentioned power synthesis device 10 in the present application, the phase shift degree of each RF power amplifier PA changes very little or basically does not change during operation. Therefore, by selecting one of the RF power amplifiers PA with the smallest difference between the phase shift error angle and the average phase shift error angle as the reference RF power amplifier PA1, subsequent power synthesis can be facilitated.

[0073] Please also read Figure 6 , Figure 6 FIG. 1 is a block diagram of a power combiner in some embodiments of the present application. Figure 1 , Figure 6As shown, when N=2, and the power values ​​of the sub-RF electric energy RF4 obtained by the two RF power amplifiers PA are not equal, the power synthesizer 200 may include a first power synthesis module 210 and a second power synthesis module 220, wherein the two RF power amplifiers PA may include a reference RF power amplifier PA1 and a phase-shifted RF power amplifier PA2. The first power synthesis module 210 is connected to the reference RF power amplifier module, the phase-shifted RF power amplifier module, and the output terminal Out. The first power synthesis module 210 is used to conduct in the positive half cycle of the two sub-RF electric energies RF4, and when conducting, the two sub-RF electric energies RF4 are power synthesized to obtain the positive half cycle RF electric energy RF+; the second power synthesis module 220 is connected to the reference RF power amplifier module, the phase-shifted RF power amplifier module, and the output terminal Out. The second power synthesis module 220 is used to conduct in the negative half cycle of the two sub-RF electric energies RF4, and when conducting, the two sub-RF electric energies RF4 are power synthesized to obtain the negative half cycle RF electric energy RF-. The positive half-cycle radio frequency power RF+ and the negative half-cycle radio frequency power RF- are mixed into the complete cycle radio frequency power RF5 at the output end Out, and output to the load RL.

[0074] Specifically, the power values ​​of the sub-RF electric energy RF4 obtained by the two RF power amplifiers PA are not equal, that is, the amplitudes of the sub-RF electric energy RF4 obtained by the two RF power amplifiers PA are not equal, and power amplification cannot be performed through a power synthesis circuit composed of passive components such as inductors and capacitors. By configuring the first power synthesis module 210, the second power synthesis module 220 and corresponding functions, power synthesis of the two sub-RF electric energies RF4 can be achieved.

[0075] In one or more embodiments, the first power synthesis module 210 is further used to disconnect in the negative half cycle of the two sub-RF electric energies RF4, and stop inputting the two sub-RF electric energies RF4 when disconnected. The second power synthesis module 220 is further used to disconnect in the positive half cycle of the two sub-RF electric energies RF4, and stop inputting the two sub-RF electric energies RF4 when disconnected.

[0076] In one or more embodiments, the amplitudes of the positive half-cycle RF power RF+ and the negative half-cycle RF power RF- are the same, and the amplitudes of the positive half-cycle RF power RF+ and the negative half-cycle RF power RF- are both the sum of the amplitudes of the two sub-RF power RF4.

[0077] Please also read Figure 7 , Figure 7 FIG. 1 is a circuit diagram of a power combiner in an embodiment of the present application. Figure 1 , Figure 6 , Figure 7As shown, the first power synthesis module 210 includes a first diode D1, a second diode D2 and a first transformer T1. The first transformer T1 includes a first winding W1 and a second winding W2. The positive electrode of the first diode D1 is connected to the reference RF power amplifier module, the negative electrode of the first diode D1 is connected to the same-name end of the first winding W1, the positive electrode of the second diode D2 is connected to the phase-shift RF power amplifier module, the negative electrode of the second diode D2 is connected to the opposite-name end of the second winding W2, the opposite-name end of the first winding W1 is connected to the output end Out, and the same-name end of the second winding W2 is connected to the first potential E1.

[0078] like Figure 1 , Figure 6 , Figure 7 As shown, the second power synthesis module 220 includes a third diode D3, a fourth diode D4 and a second transformer T2, the second transformer T2 includes a third winding W3 and a fourth winding W4, the cathode of the third diode D3 is connected to the reference RF power amplifier module, the anode of the third diode D3 is connected to the same-name end of the third winding W3, the cathode of the fourth diode D4 is connected to the phase-shift RF power amplifier module, the anode of the fourth diode D4 is connected to the opposite-name end of the fourth winding W4, the opposite-name end of the third winding W3 is connected to the output end Out, and the same-name end of the fourth winding W4 is connected to the first potential E1.

[0079] like Figure 1 , Figure 6 , Figure 7 As shown, the end of the load RL that is not connected to the output end Out is used to connect to the second potential E2. The voltage values ​​of the first potential E1 and the second potential E2 are different.

[0080] In one or more embodiments, a voltage value of the first potential E1 is smaller than a voltage value of the second potential E2 .

[0081] Furthermore, the difference between the voltage value of the second potential E2 and the voltage value of the first potential E1 is greater than the first voltage threshold.

[0082] In one or more embodiments, the voltage value of the second potential E2 may be equal to the voltage value of the ground GND.

[0083] Therefore, it is possible to avoid the power combiner 200 composed of electronic devices such as diodes and transformers from raising the voltage value of the load RL, thereby preventing the radio frequency power RF5 from being normally transmitted to the load RL.

[0084] In one or more embodiments, both the first transformer T1 and the second transformer T2 may be balun transformers.

[0085] In one or more embodiments, the load RL may be a plasma load RL.

[0086] The power synthesis device 10 of the present application, through the above-mentioned structure, can effectively solve the phase shift problem and amplitude difference problem of the initial RF signal RF1 in the power amplification process according to actual needs, and can better perform subsequent power synthesis, thereby realizing the power synthesis of multiple sub-RF power RF4, so as to obtain the high-power RF power RF5 required by the load RL, and then better provide RF power RF5 to the load RL such as the plasma load RL.

[0087] See also Figure 8 , Figure 8 FIG. 1 is a block diagram of a radio frequency power supply system in some embodiments of the present application. Figure 8 As shown, the present application further provides a radio frequency power supply system 1000, and the radio frequency power supply system 1000 includes a signal source SS and a power synthesis device 10 in any of the aforementioned embodiments.

[0088] Please refer again Figure 1 .like Figure 1 As shown, the power synthesis device 10 includes an input terminal In, an output terminal Out, N-1 phase shift control circuits 100, N RF power amplifiers PA and a power synthesizer 200, wherein the N RF power amplifiers PA include a reference RF power amplifier PA1 and N-1 phase shift RF power amplifiers PA2, N≥2. The input terminal In is used to connect to the signal source SS to receive the initial RF signal RF1 output by the signal source SS. The N-1 phase shift control circuits 100 are connected one-to-one between the input terminal In and the N-1 phase shift RF power amplifiers PA2, the N-1 phase shift RF power amplifiers PA2 are connected to the power synthesizer 200, and the reference RF power amplifier PA1 is connected between the input terminal In and the power synthesizer 200, wherein each phase shift control circuit 100 is used to selectively move or not move the phase angle of the initial RF signal RF1 to obtain the target RF signal RF3, and each RF power amplifier PA is used to power amplify the target RF signal RF3 or the initial RF signal RF1 to obtain the sub-RF power RF4. The power combiner 200 is connected to the output terminal Out, and is used to combine the sub-RF power RF4 obtained by each RF power amplifier PA to obtain RF power RF5. The output terminal Out is used to connect to the load RL to output the RF power RF5 to the load RL.

[0089] The more specific structure of the power synthesis device 10 can refer to the relevant content of the power synthesis device 10 in any of the above embodiments, which will not be repeated here.

[0090] Specifically, the signal source SS can be a crystal oscillator source, so that the waveform of the output initial RF signal RF1 is a sine wave, and the waveform of the sub-RF power RF4 obtained according to the initial RF signal RF1 and the waveform of the RF power RF5 obtained by power synthesis are also sine waves.

[0091] The power synthesis device 10 and the RF power supply system 1000 of the present application, through the above-mentioned structure, can effectively solve the phase shift problem and amplitude difference problem of the initial RF signal RF1 in the power amplification process according to actual needs, and can better perform subsequent power synthesis, thereby realizing the power synthesis of multiple sub-RF power RF4, so as to obtain the high-power RF power RF5 required by the load RL, and further provide the RF power RF5 to the load RL such as the plasma load RL.

[0092] The above description is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application; in the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A power synthesis device, characterized in that: It includes an input end, an output end, N-1 phase shift control circuits, N radio frequency power amplifiers and a power synthesizer, wherein the N radio frequency power amplifiers include a reference radio frequency power amplifier and N-1 phase shift radio frequency power amplifiers, N≥2; The input end is used to connect to a signal source to receive an initial radio frequency signal output by the signal source; The N-1 phase shift control circuits are connected one by one between the input end and the N-1 phase shift RF power amplifiers, the N-1 phase shift RF power amplifiers are connected to the power synthesizer, and the reference RF power amplifier is connected between the input end and the power synthesizer, wherein each phase shift control circuit is used to selectively move or not move the phase angle of the initial RF signal to obtain a target RF signal, and each RF power amplifier is used to power amplify the target RF signal or the initial RF signal to obtain sub-RF electrical energy; The power synthesizer is connected to the output end, and is used to synthesize the sub-RF electric energy obtained by each RF power amplifier to obtain RF electric energy; The output end is used to be connected to a load to output radio frequency electrical energy to the load.

2. The power synthesis device according to claim 1, characterized in that: Each phase shift control circuit is used to selectively move or not move the phase angle of the initial RF signal at least according to the phase angle of the sub-RF power energy obtained by the reference RF power amplifier to obtain a target RF signal with a target phase angle, so that the phase angles of the sub-RF power energy obtained by the N-1 phase shift RF power amplifiers according to the target RF signal with the target phase angle are equal to the phase angle of the sub-RF power energy obtained by the reference RF power amplifier.

3. The power synthesis device according to claim 2, characterized in that: The power synthesis device further includes a phase difference acquisition unit and a control unit, wherein the phase difference acquisition unit is connected to the N RF power amplifiers and the control unit, and the control unit is connected to the N-1 phase shift control circuits; The phase difference acquisition unit is used to acquire N-1 first phase differences, each of which is a phase difference between a phase angle of the sub-RF power energy obtained by the reference RF power amplifier and a phase angle of the sub-RF power energy obtained by the corresponding phase-shifted RF power amplifier; The control unit is used to control the corresponding phase shift control circuit to selectively move or not move the phase angle of the initial radio frequency signal according to each first phase difference, so as to obtain a target radio frequency signal with a target phase angle.

4. The power synthesis device according to claim 3, characterized in that: Each phase shift control circuit comprises a first phase shift unit and a second phase shift unit, wherein the first phase shift unit and the second phase shift unit are sequentially connected between the input end and the corresponding phase shift radio frequency power amplifier; The first phase shift unit is used to selectively shift or not shift the phase angle of the initial radio frequency signal to obtain an intermediate radio frequency signal; The second phase shift unit is used to selectively shift or not shift the phase angle of the intermediate radio frequency signal to obtain a target radio frequency signal with a target phase angle.

5. The power synthesis device according to claim 4, characterized in that: The first phase shift unit is used to selectively be in a first connection state or a second connection state to correspondingly move or not move the phase angle of the initial radio frequency signal; The second phase shift unit is used to selectively be in a third connection state or a fourth connection state to correspondingly move or not move the phase angle of the intermediate radio frequency signal; The control unit is used for controlling the corresponding first phase shift unit to be in the first connection state or the second connection state according to each first phase difference, and controlling the corresponding second phase shift unit to be in the third connection state or the fourth connection state.

6. The power synthesis device according to claim 5, characterized in that: The control unit is used to control the corresponding first phase shift unit to be in the first connection state and the corresponding second phase shift unit to be in the fourth connection state when any first phase difference is not equal to zero, or to control the corresponding first phase shift unit to be in the second connection state and the corresponding second phase shift unit to be in the third connection state; when any first phase difference is equal to zero, the corresponding first phase shift unit is controlled to be in the second connection state and the corresponding second phase shift unit is controlled to be in the fourth connection state.

7. The power synthesis device according to claim 4, characterized in that: The first phase shift unit also has a variable first phase shift parameter. When the first phase shift unit is in the first connection state, the shift angle of the phase angle of the initial radio frequency signal by the first phase shift unit changes according to the change of the first phase shift parameter; The second phase shift unit also has a variable second phase shift parameter. When the second phase shift unit is in the third connection state, the shift angle of the phase angle of the intermediate radio frequency signal by the second phase shift unit changes according to the change of the second phase shift parameter; The control unit is further configured to adjust the first phase shift parameter of the corresponding first phase shift unit according to the non-zero first phase difference when any first phase difference is not equal to zero, or adjust the second phase shift parameter of the corresponding second phase shift unit.

8. The power synthesis device according to claim 1, characterized in that: The power values ​​of the sub-RF electric energies obtained by each RF power amplifier are equal.

9. The power synthesis device according to claim 1, characterized in that: Each RF power amplifier has a phase shift error angle, and the average value of the phase shift error angles of the N RF power amplifiers is an average phase shift error angle; Among them, one of the RF power amplifiers with the smallest difference between the phase shift error angle and the average phase shift error angle is the reference RF power amplifier.

10. A radio frequency power supply system, characterized in that: It comprises a signal source and a power synthesis device as claimed in any one of claims 1 to 9.

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