Density laminated anti-electromagnetic interference state feedback high-voltage solid relay and packaging structure thereof

Abstract

The invention provides a density laminated anti-electromagnetic interference state feedback high-voltage solid relay and a packaging structure thereof. Comprising a control circuit, a first oscillation circuit and a second oscillation circuit, the first oscillation circuit and the second oscillation circuit are connected with a bias end through an electromagnetic interference suppression circuit, and the control circuit is connected with a control end; input and output are isolated by the transformer, and the transformer isolation mode has the advantages of high driving voltage, stable voltage, small temperature drift coefficient, strong driving capability and good isolation effect; through the feedback circuit, optocoupler input and output field-effect tube drain-source series connection is adopted, and the output field-effect tube conduction state feedback function is achieved. High-frequency signals generated by an internal three-point oscillating circuit are suppressed by adopting the magnetic beads, and the influence of the high-frequency signals in the product on an external circuit is reduced.

Description

Technical Field

[0001] The invention relates to a density stacked electromagnetic interference resistant state feedback high-voltage solid relay and a packaging structure thereof. Background Art

[0002] The traditional common high-voltage intelligent solid-state relay adopts a plastic-encapsulated structure design, and the chip is encapsulated inside the plastic-encapsulated device to realize the relay function. The advantages of this structure are small size, light weight, and low cost; the disadvantages are poor thermal stability, poor corrosion resistance, poor moisture resistance, poor thermal conductivity, and a small operating temperature range. It is not suitable for use in harsh environments such as extreme high and low temperatures, oceans, and wading environments. The traditional common intelligent high-voltage intelligent solid-state relay adopts a ceramic metallized packaging structure design, and uses a metal ceramic shell to encapsulate chips or components to realize the relay function. The advantages of this structure are good insulation performance, wear resistance, corrosion resistance, light weight, small size, low material cost, better thermal conductivity than plastic-encapsulated devices, good shielding, and a large operating temperature range. The disadvantages are that it is easy to absorb moisture, easy to crack, not impact-resistant, and the on-resistance is relatively high compared to plastic and metal packaging, and it is difficult to process. The traditional common high-voltage intelligent transformer-isolated solid-state relay will have electromagnetic interference problems. When users use it, they need to design relatively complex peripheral circuits for electromagnetic interference shielding and suppression, and the application cost is high.

[0003] High-voltage intelligent solid-state relays usually use power transistors, field-effect transistors MOSFEET, and IGBT as output control devices. Compared with electromagnetic relays, solid-state relays have no mechanical contacts, more breaking times, long life, and can work reliably in harsh environments. They are used in many fields and are currently developing in the direction of smaller and smaller size, higher load capacity, and higher power density.

[0004] Most common high-voltage intelligent solid-state relay output devices use silicon field-effect tubes as output power devices. Silicon field-effect tubes have a lower bandgap than SiC field-effect tubes. When used in the same voltage and high-voltage applications, they are more likely to be broken down than SiC field-effect tubes, resulting in product failure. Devices using silicon field-effect tubes do not have as good heat dissipation performance as SiC field-effect tubes at high temperatures. SiC field-effect tubes can work stably at high temperatures.

[0005] In addition, the existing high-voltage intelligent transformer-isolated solid-state relays will have electromagnetic interference problems. When used by users, relatively complex peripheral circuits need to be designed for electromagnetic interference shielding and suppression, and the application cost is relatively high. For example, CN204668240U discloses a switch circuit that accelerates the opening of the relay and reduces the heating of the relay. The two-level voltage drive of the relay is realized through the single-chip drive circuit. The high voltage accelerates the opening of the relay to reduce contact oscillation and extend the contact life; the low voltage maintains the relay on, which is beneficial to reduce power consumption and heat and increase system stability. However, when eliminating the oscillation time of the relay on, it adopts the method of increasing the working voltage of the relay coil to increase the magnetic field strength; and the state of its switch is directly monitored by the single-chip microcomputer. Summary of the invention

[0006] In order to solve the above technical problems, the present invention provides a density-stacked electromagnetic interference-resistant state feedback high-voltage solid-state relay and its packaging structure.

[0007] The present invention is achieved through the following technical solutions.

[0008] The present invention provides a density stacked electromagnetic interference-resistant state feedback high-voltage solid-state relay and its packaging structure; the relay comprises a control circuit, a first oscillation circuit, and a second oscillation circuit, the first oscillation circuit and the second oscillation circuit are both connected to the bias end through an electromagnetic interference suppression circuit, and the control circuit is connected to the control end;

[0009] The first oscillation circuit is connected to the full-wave rectifier circuit through the transformer T2, the full-wave rectifier circuit is connected to the optical isolation state feedback circuit and the anti-backflow circuit in sequence, the anti-backflow circuit is connected to the output positive terminal, and the optical isolation state feedback circuit is connected to the state feedback terminal;

[0010] The second oscillator circuit is connected to the half-wave rectifier circuit through the transformer T1, the half-wave rectifier circuit is connected to the discharge circuit and the output power switch circuit in sequence, and the two ends of the output power switch circuit are connected to the output positive end and the output negative end respectively;

[0011] The second oscillation circuit is also connected to the controller, the controller is connected to the input ground, and the electromagnetic interference circuit, the first oscillation circuit and the optical isolation state feedback circuit are connected to the input ground.

[0012] The electromagnetic interference suppression circuit includes a magnetic bead FB1, two ends of which are respectively connected to the bias end and the first oscillation circuit and the second oscillation circuit, and two ends of the magnetic bead FB1 are also respectively connected to the input ground through a capacitor C1 and a capacitor C2.

[0013] The first oscillation circuit includes a transistor V3, the base of the transistor V3 is connected to a capacitor C9, a resistor R9, and a capacitor C10 in sequence, the other ends of the capacitor C9 and the resistor R9 are connected in parallel and are respectively connected to one end of the primary side of the transformer T2, a magnetic bead FB1, and a capacitor C3, and the capacitor C3 is connected to the capacitor C2; the other end of the capacitor C10 is connected to the emitter of the transistor V3, the collector of the transistor V3 is connected to the other end of the primary side of the transformer T2, and a capacitor C11 is further connected between the emitter and the collector of the transistor V3; the two ends of the capacitor C10 are also respectively connected to the resistor R10 and the resistor R11, and the other ends of the resistor R10 and the resistor R11 are connected to the input ground;

[0014] The second oscillation circuit includes a transistor V1, the base of which is connected to a capacitor C5, a resistor R1, and a capacitor C6 in sequence, and the other ends of the capacitor C5 and the resistor R1 are connected in parallel and are respectively connected to one end of the primary side of the transformer T1 and a magnetic bead FB1; the other end of the capacitor C6 is connected to the emitter of the transistor V1, the collector of the transistor V1 is connected to the other end of the primary side of the transformer T1, and a capacitor C7 is further connected between the emitter and the collector of the transistor V1; the two ends of the capacitor C6 are also respectively connected to the resistor R2 and the resistor R3, and the other ends of the resistor R2 and the resistor R3 are connected to the controller.

[0015] The secondary side of the transformer T2 is connected to a full-wave rectifier circuit, which is composed of a diode D5, a diode D6, a diode D8, and a diode D7 connected end to end. The secondary side of the transformer T2 is connected to the cathodes of the diodes D6 and D8, respectively. The cathode of the diode D7 and the anode of the diode D8 are also connected to the two ends of the capacitor C12, respectively. The anode of the diode D8 is connected to the negative output terminal.

[0016] The secondary side of the transformer T1 is connected to a half-wave rectifier circuit, which includes a diode D2. The positive electrode of the diode D2 is connected to one end of the secondary side of the transformer T1, and the negative electrode of the diode D2 is connected to capacitors R6 and C8 at one time. The other ends of the capacitors R6, C8 and the secondary side of the transformer T1 are all connected to the output negative end.

[0017] The photoelectric isolation state feedback circuit includes a voltage stabilizing diode D9, a cathode of the voltage stabilizing diode D9 is connected to a resistor R12 and a positive electrode of an input end of the photocoupler, a capacitor R12 is connected to a cathode of the diode D7, a cathode of the voltage stabilizing diode D9 is connected to a negative electrode of an output end, a negative electrode of an input end of the photocoupler is connected to an anti-backflow circuit, and two electrodes of an output end of the photocoupler are respectively connected to an input ground and a state feedback end.

[0018] The anti-backflow circuit includes a 1200V high-voltage diode D12, one end of the 1200V high-voltage diode D12 is connected to the negative electrode of the input end of the photocoupler, and the other end is connected to the output power switch circuit, the output power switch circuit includes a field effect tube Q1 and a field effect tube Q2, the gates of the field effect tube Q1 and the field effect tube Q2 are respectively connected to the resistor R7 and the resistor R8, the other ends of the resistor R7 and the resistor R8 are connected to the positive electrode of the output end, the drains of the field effect tube Q1 and the field effect tube Q2 are both connected to the output positive end, and the sources of the field effect tube Q1 and the field effect tube Q2 are both connected to the output negative end.

[0019] The discharge circuit includes a transistor V4, the base of the transistor V4 is connected to the cathode of the diode D2, the emitter and the collector are respectively connected to the positive output terminal and the negative output terminal, a diode D3 is further connected between the base and the emitter of the transistor V4, and a diode D4 is further connected between the collector and the emitter.

[0020] The packaging structure of a solid-state relay comprises a base, a cover, a first output circuit module, a second output circuit module, and an input circuit module. The first output circuit module, the second output circuit module, and the input circuit module are arranged in a three-layer stacked structure on the base. The cover covers the first output circuit module, the second output circuit module, and the input circuit module, and the edge of the cover is fixed to the base. The bottom of the base is provided with a plurality of leads extending into the cover, and the leads are respectively connected to the first output circuit module, the second output circuit module, and the input circuit module.

[0021] Two first output circuit modules are welded on the bottom of the base, two second output circuit modules and one input circuit module are supported in sequence above the first output circuit module through leads, and the first output circuit module, the second output circuit module and one end of the input circuit module on the same side respectively form a density-stacked anti-electromagnetic interference state feedback high-voltage solid-state relay and its packaging structure; the first output circuit module is equipped with an anti-backflow circuit, a discharge circuit, and an output power switch circuit, and the first output circuit module is connected to the lead through a connecting piece, and the second output circuit module is provided with an optical isolation state feedback circuit, and there is also a light-isolating printed circuit board installed between the second output circuit module and the input circuit module on both sides of the optical couple in the optical isolation state feedback circuit, and the input circuit module is provided with an electromagnetic interference suppression circuit, a first oscillation circuit, a second oscillation circuit, a control circuit, a full-wave rectification circuit, a half-wave rectification circuit and a transformer, and the second output circuit module is also reserved with a hole of the same size as the transformer, and the end of the transformer passes through the second output circuit module.

[0022] Several leads include a first output positive terminal, a first output negative terminal, a second output positive terminal, and a second output negative terminal connected to the first output circuit module and the second output circuit module, and a first control terminal, a first bias terminal, a first feedback terminal, a first input ground, a second control terminal, a second bias terminal, a second feedback terminal, and a second input ground connected to 5.

[0023] The beneficial effects of the present invention are as follows: the input and output are isolated by a transformer, and the transformer isolation method has the advantages of high driving voltage, stable voltage, small temperature drift coefficient, strong driving capability, good isolation effect, low circuit cost, etc. It is suitable for driving silicon carbide field effect tubes and is widely used in high-power and high-voltage intelligent solid-state relays.

[0024] It has the function of output switch state feedback. The state feedback circuit is designed to use the optocoupler input and the output field effect tube drain source in series to realize the output field effect tube conduction state feedback function. When in use, the level between the collector and emitter of the optocoupler output transistor is detected to determine the switch state of the relay output. The detection method is simple, the detection circuit power consumption is low, and the power consumption of the product itself is greatly reduced. The feedback end uses optocoupler isolation to detect the output state, using a typical photoelectric isolation method with high reliability.

[0025] Magnetic beads are used to suppress the high-frequency signals generated by the internal three-point oscillation circuit, reducing the impact of the internal high-frequency signals on the external circuit. Decoupling capacitors are connected in parallel at both ends of the magnetic beads to achieve filtering, filter out spike voltages, and improve the pass rate of the product's electrical compatibility test. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic diagram of the principle of the present invention;

[0027] Figure 2 This is a schematic diagram of the first circuit structure of the present invention;

[0028] Figure 3 is a schematic diagram of the second circuit structure of the present invention;

[0029] Figure 4 It is a relay wiring diagram of the present invention;

[0030] Figure 5 It is a cross-sectional structural schematic diagram of the present invention;

[0031] Figure 6 It is a left side schematic diagram of the internal structure of the present invention;

[0032] In the figure: 1-base, 2-cover, 3-first output circuit module, 4-second output circuit module, 5-input circuit module, 6-light-shielding printed circuit board, 7-high voltage diode, 8-infrared light-emitting diode, 9-phototransistor, 10-bonding gold wire, 11-connecting piece, 12-transformer, 13-bonding aluminum wire, 14-field effect transistor, 15-silver-plated copper wire, 16-ceramic insulator, 17-base plate, 18-lead. DETAILED DESCRIPTION

[0033] The technical solution of the present invention is further described below, but the scope of protection claimed is not limited to the description.

[0034] A density stacked electromagnetic interference-resistant state feedback high-voltage solid-state relay and its packaging structure; comprising a control circuit, a first oscillation circuit, and a second oscillation circuit, wherein the first oscillation circuit and the second oscillation circuit are both connected to a bias terminal through an electromagnetic interference suppression circuit, and the control circuit is connected to the control terminal;

[0035] The first oscillation circuit is connected to the full-wave rectifier circuit through the transformer T2, the full-wave rectifier circuit is connected to the optical isolation state feedback circuit and the anti-backflow circuit in sequence, the anti-backflow circuit is connected to the output positive terminal, and the optical isolation state feedback circuit is connected to the state feedback terminal;

[0036] The second oscillator circuit is connected to the half-wave rectifier circuit through the transformer T1, the half-wave rectifier circuit is connected to the discharge circuit and the output power switch circuit in sequence, and the two ends of the output power switch circuit are connected to the output positive end and the output negative end respectively;

[0037] The second oscillation circuit is also connected to the controller, the controller is connected to the input ground, and the electromagnetic interference circuit, the first oscillation circuit and the optical isolation state feedback circuit are connected to the input ground.

[0038] The electromagnetic interference suppression circuit includes a magnetic bead FB1, two ends of which are respectively connected to the bias end and the first oscillation circuit and the second oscillation circuit, and two ends of the magnetic bead FB1 are also respectively connected to the input ground through a capacitor C1 and a capacitor C2.

[0039] This application has the following functions:

[0040] (1) Relay function: The second oscillator circuit and transformer T2 couple the input bias electrical signal to the transformer secondary; the electrical signal generated by the transformer secondary is converted into a DC signal through a half-wave rectifier circuit to drive the output power switch circuit. The control terminal electrical signal passes through the control circuit, and the control circuit mainly controls the connection of the loop between the oscillator circuit and the input ground, thereby controlling the output load to be connected. When there is no control signal, the discharge circuit works to quickly discharge the charge of the devices in the output power switch circuit, shortening the time for the output power switch circuit to shut down, and the relay quickly disconnects the output load.

[0041] (2) State feedback function: The first oscillator circuit and transformer T1 couple the input bias electrical signal to the transformer secondary; after full-wave rectification, the signal is rectified into a DC signal to drive the optical isolation state feedback circuit. When the output power switch circuit works, the optical isolation state feedback circuit works, and the external circuit detects that the state feedback terminal and the input ground are at a low level to determine the on / off state of the output circuit. The main function of the anti-backflow circuit is to protect the state feedback circuit inside the product and block the output load from the internal circuit.

[0042] (3) Electromagnetic interference suppression circuit: It mainly suppresses the high-frequency signals generated when the first oscillation circuit and the second oscillation circuit are working, and reduces the interference of high-frequency signals to external circuits.

[0043] like Figure 2 and Figure 3 They are two relay circuits in the solid-state relay of the present application, and the two circuits have the same structure.

[0044] The first oscillation circuit includes a transistor V3, the base of which is connected to a capacitor C9, a resistor R9, and a capacitor C10 in sequence, the other ends of the capacitor C9 and the resistor R9 are connected in parallel and are respectively connected to one end of the primary side of the transformer T2, a magnetic bead FB1, and the capacitor C3, and the capacitor C3 is connected to the capacitor C2; the other end of the capacitor C10 is connected to the emitter of the transistor V3, the collector of the transistor V3 is connected to the other end of the primary side of the transformer T2, and a capacitor C11 is further connected between the emitter and the collector of the transistor V3; the two ends of the capacitor C10 are further connected to the resistor R10 and the resistor R11, respectively, and the other ends of the resistor R10 and the resistor R11 are connected to the input ground;

[0045] The second oscillation circuit includes a transistor V1, the base of which is connected to a capacitor C5, a resistor R1, and a capacitor C6 in sequence, and the other ends of the capacitor C5 and the resistor R1 are connected in parallel and are respectively connected to one end of the primary side of the transformer T1 and a magnetic bead FB1; the other end of the capacitor C6 is connected to the emitter of the transistor V1, the collector of the transistor V1 is connected to the other end of the primary side of the transformer T1, and a capacitor C7 is further connected between the emitter and the collector of the transistor V1; the two ends of the capacitor C6 are further connected to the resistor R2 and the resistor R3, and the other ends of the resistor R2 and the resistor R3 are connected to the controller.

[0046] The secondary side of the transformer T2 is connected to a full-wave rectifier circuit, which is composed of a diode D5, a diode D6, a diode D8, and a diode D7 connected end to end. The secondary side of the transformer T2 is connected to the cathodes of the diodes D6 and D8, respectively. The cathode of the diode D7 and the anode of the diode D8 are also connected to the two ends of the capacitor C12, respectively. The anode of the diode D8 is connected to the negative output terminal.

[0047] The secondary side of the transformer T1 is connected to a half-wave rectifier circuit, which includes a diode D2. The positive electrode of the diode D2 is connected to one end of the secondary side of the transformer T1, and the negative electrode of the diode D2 is connected to capacitors R6 and C8. The other ends of the capacitors R6, C8 and the secondary side of the transformer T1 are all connected to the output negative end.

[0048] The photoelectric isolation state feedback circuit includes a voltage stabilizing diode D9, a cathode of the voltage stabilizing diode D9 is connected to a resistor R12 and a positive electrode of an input end of the photocoupler, a capacitor R12 is connected to a cathode of the diode D7, a cathode of the voltage stabilizing diode D9 is connected to a negative electrode of an output end, a negative electrode of an input end of the photocoupler is connected to an anti-backflow circuit, and two electrodes of an output end of the photocoupler are respectively connected to an input ground and a state feedback end.

[0049] The anti-backflow circuit includes a 1200V high-voltage diode D12, one end of the 1200V high-voltage diode D12 is connected to the negative electrode of the input end of the photocoupler, and the other end is connected to the output power switch circuit, the output power switch circuit includes a field effect tube Q1 and a field effect tube Q2, the gates of the field effect tube Q1 and the field effect tube Q2 are respectively connected to the resistor R7 and the resistor R8, the other ends of the resistor R7 and the resistor R8 are connected to the positive electrode of the output end, the drains of the field effect tube Q1 and the field effect tube Q2 are both connected to the output positive end, and the sources of the field effect tube Q1 and the field effect tube Q2 are both connected to the output negative end.

[0050] The discharge circuit includes a transistor V4, the base of the transistor V4 is connected to the cathode of the diode D2, the emitter and the collector are respectively connected to the positive output terminal and the negative output terminal, a diode D3 is further connected between the base and the emitter of the transistor V4, and a diode D4 is further connected between the collector and the emitter.

[0051] like Figure 5 and 6As shown, the solid relay of the present application is provided with two identical relay circuits. It adopts metal airtight packaging, the maximum size of the packaging body is 41.5mm×23.5mm×10.6mm, and 1200V high-voltage silicon carbide field effect tubes are connected in parallel as output power devices. The output power device SiC field effect tube output withstand voltage is up to 1200V, and the single group output on-resistance is reduced to 7.5mΩ. The lead wire adopts copper-clad Kovar composite material, which has low resistivity, improved strength, not easy to deform, and improved lead current density. This intelligent density stacked anti-electromagnetic interference state feedback high-voltage solid relay and its packaging structure are 2 groups of normally open DC outputs, which can realize 540Vd.c., 15Ad.c. output load on-off control, so that the product power density reaches 1567W / cm3. The invention comprises a base 1, a cover 2, a first output circuit module 3, a second output circuit module 4, and an input circuit module 5. The first output circuit module 3, the second output circuit module 4, and the input circuit module 5 are arranged in a three-layer stacked structure on the base 1. The cover 2 covers the first output circuit module 3, the second output circuit module 4, and the input circuit module 5, and the edge of the cover 2 is fixed on the base 1. The bottom of the base 1 is provided with a plurality of leads 18 extending into the cover 2, and the leads 18 are respectively connected to the first output circuit module 3, the second output circuit module 4, and the input circuit module 5. The second output circuit module and the input circuit module are supported by a light-isolating printed circuit board to achieve a positioning height of 1mm, forming a suitable infrared light-emitting diode and a photosensitive triode light-emitting and light-receiving distance, and forming a structure of a light-isolating vertical light-guiding optical isolation state feedback circuit. The second layer of the printed circuit board is provided with a hole of appropriate size by opening a hole. When assembling the third layer of the circuit board, the large-packaged and large-volume transformer and the anti-backflow high-voltage diode on the back of the third layer of the circuit board can be assembled through the second layer of the circuit board, thereby improving the internal space utilization of the product and reducing the internal circuit height of the product. The first-layer circuit board and the second-layer circuit board are bonded and welded with bare chips, and electrical connection is achieved by bonding. The discrete devices on the third-layer circuit board are welded, and the bare chips are bonded and bonded, forming a Class II hybrid structure intelligent solid-state relay.

[0052] The first output circuit module 3 is welded on the base 1, and the connection is achieved through the connecting piece and the output lead of the base by reflow welding to realize the electrical connection with the external circuit interface. The bare chip of the second output circuit module 4 is welded on the printed circuit board by conductive glue, and the second output circuit module 4 is manually welded on the lead of the base 1. The light-isolating circuit board is bonded to the second output circuit module 4 by thermally conductive insulating glue, so that the two sets of optical isolation state feedback circuits are independent and do not affect each other. The components of the input circuit module 5 are discrete components, transformers and bare chips. The components are electrically connected to the printed circuit board circuit by reflow soldering, conductive glue bonding and manual welding. The input circuit module 5 and the first output circuit module 3 are electrically connected by manual welding of silver-plated copper wire. The input circuit module 5 is electrically connected to the lead of the base by manual welding.

[0053] Two first output circuit modules 3 are welded to the bottom of the base 1, and two second output circuit modules 4 and one input circuit module 5 are supported in sequence above the first output circuit module 3 through the lead 18. The first output circuit module 3, the second output circuit module 4 and one end of the input circuit module 5 on the same side respectively form a density-stacked anti-electromagnetic interference state feedback high-voltage solid-state relay and its packaging structure; the first output circuit module 3 is equipped with an anti-backflow circuit, a discharge circuit, and an output power switch circuit. The first output circuit module 3 is connected to the lead 18 through a connecting piece. The second output circuit module 4 is provided with an optical isolation state feedback circuit. On both sides of the optical couple in the optical isolation state feedback circuit, there is also a light-isolating printed circuit board 6 installed between the second output circuit module 4 and the input circuit module 5. The input circuit module 5 is provided with an electromagnetic interference suppression circuit, a first oscillation circuit, a second oscillation circuit, a control circuit, a full-wave rectification circuit, a half-wave rectification circuit and a transformer. The second output circuit module 4 is also reserved with a hole of the same size as the transformer, and the end of the transformer passes through the second output circuit module 4. Figure 5As shown, the first output circuit module 3 includes a DBC board, a high-voltage silicon carbide field effect tube chip (Q1, Q2), a chip resistor (R7, R8), a chip capacitor (C8), a voltage stabilizing diode chip (D4), a PNP transistor chip (V4), a diode chip (D3), a copper-gold transition piece, a copper-aluminum transition piece, a connecting piece 11 and a silver-plated copper wire 15. The second output circuit module 4 includes a photocoupler. The input circuit module 5 includes a printed circuit board, a transformer T1 / T2, a magnetic bead FB, a high-voltage diode D12, diodes (D1, D2, D4, D5, D7, D8), a voltage-stabilizing diode chip (D9), transistors (V1, V2, V3), an infrared light-emitting diode (D10), resistors (R1, R2, R3, R4, R5, R6, R9, R10, R11, R12), capacitors (C1, C2, C3, C4, C5, C6, C7, C9, C10, C11, C12), gold bonding wires and copper-gold transition pieces.

[0054] Several leads 18 include a first output positive terminal, a first output negative terminal, a second output positive terminal, and a second output negative terminal connected to the first output circuit module 3 and the second output circuit module 4, and a first control terminal, a first bias terminal, a first feedback terminal, a first input ground, a second control terminal, a second bias terminal, a second feedback terminal, and a second input ground connected to 5.

[0055] like Figure 6 As shown, the airtight package includes a base 1 and a cover 2. The base 1 includes a ceramic insulator 16, a bottom plate 17 and a lead 18. The cover 2 is made of nickel strip, the insulator material is ceramic, the lead 18 and the bottom plate 17 are made of Kovar alloy material, the base 1 is formed by sintering the ceramic insulator 16, the bottom plate 17 and the lead 18 by brazing technology, and the base 1 and the cover 2 are sealed by energy storage welding, and the leakage rate after sealing welding is less than 1×10 -3 Pa·m3 / s; The solid relay is sealed with a metal airtight packaging shell, which has the advantages of high airtightness, high temperature resistance, corrosion resistance, moisture resistance, good shielding protection, and durability.

[0056] The solid relay provided by the present invention is a Class II hybrid structure. The solid relay adopts a metal airtight package, and the package dimensions are only 41.5mm×23.5mm×10.6mm. The product circuit is 2 groups of normally open circuits. In addition, the power solid relay can achieve a load capacity of 540Vd.c. and 15A at room temperature in such a small volume, and a load capacity of 540Vd.c. and 12A at high temperature.

Claims

1. A density stacked electromagnetic interference resistant state feedback high voltage solid state relay, characterized in that: It includes a control circuit, a first oscillation circuit, and a second oscillation circuit, wherein the first oscillation circuit and the second oscillation circuit are both connected to the bias end through an electromagnetic interference suppression circuit, and the control circuit is connected to the control end; The first oscillation circuit is connected to the full-wave rectifier circuit through the transformer T2, the full-wave rectifier circuit is connected to the optical isolation state feedback circuit and the anti-backflow circuit in sequence, the anti-backflow circuit is connected to the output positive terminal, and the optical isolation state feedback circuit is connected to the state feedback terminal; The second oscillator circuit is connected to the half-wave rectifier circuit through the transformer T1, the half-wave rectifier circuit is connected to the discharge circuit and the output power switch circuit in sequence, and the two ends of the output power switch circuit are connected to the output positive end and the output negative end respectively; The second oscillation circuit is also connected to the controller, the controller is connected to the input ground, and the electromagnetic interference circuit, the first oscillation circuit and the optical isolation state feedback circuit are connected to the input ground.

2. The density-stacked electromagnetic interference-resistant state feedback high-voltage solid-state relay according to claim 1, characterized in that: The electromagnetic interference suppression circuit includes a magnetic bead FB1, two ends of which are respectively connected to the bias end and the first oscillation circuit and the second oscillation circuit, and two ends of the magnetic bead FB1 are also respectively connected to the input ground through a capacitor C1 and a capacitor C2.

3. The density-stacked electromagnetic interference-resistant state feedback high-voltage solid-state relay according to claim 1, characterized in that: The first oscillation circuit includes a transistor V3, the base of the transistor V3 is connected to a capacitor C9, a resistor R9, and a capacitor C10 in sequence, the other ends of the capacitor C9 and the resistor R9 are connected in parallel and are respectively connected to one end of the primary side of the transformer T2, a magnetic bead FB1, and a capacitor C3, and the capacitor C3 is connected to the capacitor C2; the other end of the capacitor C10 is connected to the emitter of the transistor V3, the collector of the transistor V3 is connected to the other end of the primary side of the transformer T2, and a capacitor C11 is further connected between the emitter and the collector of the transistor V3; the two ends of the capacitor C10 are also respectively connected to the resistor R10 and the resistor R11, and the other ends of the resistor R10 and the resistor R11 are connected to the input ground; The second oscillation circuit includes a transistor V1, the base of which is connected to a capacitor C5, a resistor R1, and a capacitor C6 in sequence, and the other ends of the capacitor C5 and the resistor R1 are connected in parallel and are respectively connected to one end of the primary side of the transformer T1 and a magnetic bead FB1; the other end of the capacitor C6 is connected to the emitter of the transistor V1, the collector of the transistor V1 is connected to the other end of the primary side of the transformer T1, and a capacitor C7 is further connected between the emitter and the collector of the transistor V1; the two ends of the capacitor C6 are also respectively connected to the resistor R2 and the resistor R3, and the other ends of the resistor R2 and the resistor R3 are connected to the controller.

4. The density-stacked electromagnetic interference-resistant state feedback high-voltage solid-state relay according to claim 3, characterized in that: The secondary side of the transformer T2 is connected to a full-wave rectifier circuit, which is composed of a diode D5, a diode D6, a diode D8, and a diode D7 connected end to end. The secondary side of the transformer T2 is connected to the cathodes of the diodes D6 and D8, respectively. The cathode of the diode D7 and the anode of the diode D8 are also connected to the two ends of the capacitor C12, respectively. The anode of the diode D8 is connected to the negative output terminal. The secondary side of the transformer T1 is connected to a half-wave rectifier circuit, which includes a diode D2. The positive electrode of the diode D2 is connected to one end of the secondary side of the transformer T1, and the negative electrode of the diode D2 is connected to capacitors R6 and C8 at one time. The other ends of the capacitors R6, C8 and the secondary side of the transformer T1 are all connected to the output negative end.

5. The density-stacked electromagnetic interference-resistant state feedback high-voltage solid-state relay according to claim 1, characterized in that: The photoelectric isolation state feedback circuit includes a voltage stabilizing diode D9, a cathode of the voltage stabilizing diode D9 is connected to a resistor R12 and a positive electrode of an input end of the photocoupler, a capacitor R12 is connected to a cathode of the diode D7, a cathode of the voltage stabilizing diode D9 is connected to a negative electrode of an output end, a negative electrode of an input end of the photocoupler is connected to an anti-backflow circuit, and two electrodes of an output end of the photocoupler are respectively connected to an input ground and a state feedback end.

6. The density-stacked electromagnetic interference-resistant state feedback high-voltage solid-state relay according to claim 1, characterized in that: The anti-backflow circuit includes a 1200V high-voltage diode D12, one end of the 1200V high-voltage diode D12 is connected to the negative electrode of the input end of the photocoupler, and the other end is connected to the output power switch circuit, the output power switch circuit includes a field effect tube Q1 and a field effect tube Q2, the gates of the field effect tube Q1 and the field effect tube Q2 are respectively connected to the resistor R7 and the resistor R8, the other ends of the resistor R7 and the resistor R8 are connected to the positive electrode of the output end, the drains of the field effect tube Q1 and the field effect tube Q2 are both connected to the output positive end, and the sources of the field effect tube Q1 and the field effect tube Q2 are both connected to the output negative end.

7. The density-stacked electromagnetic interference-resistant state feedback high-voltage solid-state relay according to claim 1, characterized in that: The discharge circuit includes a transistor V4, the base of the transistor V4 is connected to the cathode of the diode D2, the emitter and the collector are respectively connected to the positive output terminal and the negative output terminal, a diode D3 is further connected between the base and the emitter of the transistor V4, and a diode D4 is further connected between the collector and the emitter.

8. A packaging structure of a solid-state relay as described in any one of 1 to 7, characterized in that: The invention comprises a base (1), a cover (2), a first output circuit module (3), a second output circuit module (4), and an input circuit module (5); the first output circuit module (3), the second output circuit module (4), and the input circuit module (5) are arranged on the base (1) in a three-layer stacked structure; the cover (2) covers the first output circuit module (3), the second output circuit module (4), and the input circuit module (5), and the edge of the cover (2) is fixed on the base (1); a plurality of leads (18) extending into the cover (2) are provided at the bottom of the base (1); the leads (18) are respectively connected to the first output circuit module (3), the second output circuit module (4), and the input circuit module (5).

9. The packaging structure of a solid-state relay according to claim 8, characterized in that: Two first output circuit modules (3) are welded to the bottom of the base (1); two second output circuit modules (4) and an input circuit module (5) are sequentially supported above the first output circuit module (3) through leads (18); the first output circuit module (3), the second output circuit module (4) and one end of the input circuit module (5) on the same side respectively form a density-stacked anti-electromagnetic interference state feedback high-voltage solid-state relay and its packaging structure; the first output circuit module (3) is equipped with an anti-backflow circuit, a discharge circuit, and an output power switch circuit; the first output circuit module (3) is connected to the leads through a connecting piece. (18) connection, the second output circuit module (4) is provided with an optical isolation state feedback circuit, and on both sides of the optical couple in the optical isolation state feedback circuit, there are also optical isolation printed circuit boards (6) installed between the second output circuit module (4) and the input circuit module (5), the input circuit module (5) is provided with an electromagnetic interference suppression circuit, a first oscillation circuit, a second oscillation circuit, a control circuit, a full-wave rectification circuit, a half-wave rectification circuit and a transformer, the second output circuit module (4) is also reserved with a hole of the same size as the transformer, and the end of the transformer passes through the second output circuit module (4).

10. The packaging structure of the solid-state relay according to claim 9, characterized in that: The plurality of leads (18) include a first output positive terminal, a first output negative terminal, a second output positive terminal, and a second output negative terminal connected to the first output circuit module (3) and the second output circuit module (4), and a first control terminal, a first bias terminal, a first feedback terminal, a first input ground, a second control terminal, a second bias terminal, a second feedback terminal, and a second input ground connected to 5.

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