Plasma gas-liquid discharge device and device control method

Abstract

The application relates to the technical field of plasma, and discloses a plasma gas-liquid discharge device and a device control method. The discharge device comprises a high-voltage electrode, a low-voltage electrode and an insulating substrate. A plurality of slot channels are formed in the first surface of the insulating substrate, and the depth of each slot channel is micron-level. The high-voltage electrode and the low-voltage electrode are used for forming an electric field, and each slot channel is located in the electric field. Thus, the micron-level slot channels are used to provide micron-level liquid to be treated, so that the action area of the plasma can cover the liquid in the slot channels, and the liquid flowing through the slot channels has a good treatment effect, thereby comprehensively improving the treatment effect of the plasma on the gas-liquid two-phase medium.

Description

Technical Field

[0001] This invention relates to the field of plasma technology, and more specifically to a plasma gas-liquid discharge device and a device control method. Background Technology

[0002] Low-temperature plasma technology has been widely studied in areas such as material modification, pollution control, and medical disinfection due to its advantages of high reaction rate, high reactivity, and convenient control.

[0003] In a gaseous dielectric discharge environment with good insulation properties, when the external driving energy reaches the energy threshold for the excitation ionization of gas molecules, a series of excitation ionization processes can be induced to generate plasma. However, in a liquid dielectric discharge environment, since the liquid medium is usually non-insulating, under the influence of an applied electric field, ions inside the liquid often undergo charge rearrangement rather than plasma generation. Therefore, the gas-liquid discharge process usually occurs in the gas phase and the gas-liquid interface, causing the plasma's effective area to be mainly concentrated on the liquid surface and not effectively covering the interior of the liquid, resulting in poor liquid treatment performance. Currently, the main method to increase the plasma's effective area inside the liquid is to increase the gas-liquid two-phase area by bubbling into the liquid, thereby establishing a plasma reaction zone within the liquid. However, the random distribution and large degree of freedom of movement of bubbles inside the liquid make controlling the plasma reaction zone inside the liquid still a challenge. Summary of the Invention

[0004] The purpose of this invention is to overcome the problem in the prior art that the effective area of ​​plasma is mainly concentrated on the surface of the liquid and cannot effectively cover the interior of the liquid, resulting in poor liquid treatment effect, and to provide a plasma gas-liquid discharge device and device control method.

[0005] To achieve the above objectives, the first aspect of the present invention provides a plasma gas-liquid discharge device, the discharge device comprising a high-voltage electrode, a low-voltage electrode, and an insulating substrate;

[0006] The first surface of the insulating substrate is provided with a plurality of groove channels, and the depth of each groove channel is on the micrometer level.

[0007] The high-voltage electrode and the low-voltage electrode are used to form an electric field, and each of the slotted channels is located in the electric field.

[0008] In this embodiment, the high-voltage electrode is a linear high-voltage electrode, the low-voltage electrode is a linear low-voltage electrode, and the linear high-voltage electrode and the linear low-voltage electrode are located on the same target plane; the target plane is parallel to the first surface.

[0009] In this embodiment, the high-voltage electrode is a linear high-voltage electrode, and the low-voltage electrode is a plate-shaped low-voltage electrode. The linear high-voltage electrode is located on one side of the first surface, and the plate-shaped low-voltage electrode is located on one side of the second surface of the insulating substrate; the second surface is opposite to the first surface.

[0010] In this embodiment, the high-voltage electrode is a plate-shaped high-voltage electrode, and the low-voltage electrode is a plate-shaped low-voltage electrode. The plate-shaped high-voltage electrode is located on one side of the first surface, and the plate-shaped low-voltage electrode is located on one side of the second surface of the insulating substrate; the second surface is opposite to the first surface.

[0011] In this embodiment of the application, the slotted channels are parallel to each other, and the direction of the electric field is perpendicular to the extension direction of each slotted channel.

[0012] In this embodiment of the application, the discharge device further includes a hydrophobic and breathable membrane, which is attached to the first surface to cover the plurality of grooved channels; the surface of the hydrophobic and breathable membrane facing the grooved channels is hydrophobic, and the hydrophobic and breathable membrane as a whole is breathable.

[0013] In this embodiment, the surface of the hydrophobic and breathable membrane facing away from the grooved channel is hydrophilic.

[0014] In this embodiment of the application, the discharge device further includes a plurality of first valves, each of which is respectively disposed on each of the groove-shaped channels.

[0015] In this embodiment, the spacing between any two adjacent slot channels is on the order of micrometers.

[0016] In this embodiment of the application, the discharge device further includes an airflow control device located on one side of the first surface. The airflow control device is used to control the airflow direction in the gas phase discharge space, which is parallel to the extension direction of the slotted channel.

[0017] A second aspect of the present invention provides a device control method for controlling the plasma gas-liquid discharge device provided in the first aspect of this application, the control method comprising:

[0018] Determine the target reaction dwell time corresponding to each of the aforementioned trough channels;

[0019] Based on the target reaction residence time, the reaction residence time of the liquid in each of the trough channels is controlled.

[0020] In this embodiment of the application, determining the target reaction dwell time corresponding to each of the slotted channels includes:

[0021] Determine the plasma reaction energy ratio between each of the aforementioned trough channels;

[0022] Based on the reaction energy ratio, a first target channel, a second target channel, and a third target channel are selected from each of the aforementioned channel types; wherein, the first target channel is the channel with the highest plasma reaction energy among all the aforementioned channel types, the second target channel is the channel with the lowest plasma reaction energy among all the aforementioned channel types, and the plasma reaction energy of the third target channel is located between the plasma concentration of the first target channel and the plasma reaction energy of the second target channel;

[0023] A target solution is introduced into the first target tank channel, the second target tank channel, and the third target tank channel. When the treatment effect of the target solution reaches the preset effect, the target solution is subjected to the first reaction residence time corresponding to the first target tank channel, the second target tank channel, and the third target tank channel, respectively.

[0024] Based on the first reaction dwell time and the relative positional relationship between the second target trough, the third target trough channel and the first target trough channel, a reaction dwell time simulation curve is plotted;

[0025] Based on the simulated reaction dwell time curve and the relative positional relationship between each of the trough channels, the target reaction dwell time corresponding to each of the trough channels is determined.

[0026] In this embodiment of the application, determining the plasma reaction energy ratio between each of the grooved channels includes:

[0027] Color-developing liquid is introduced into each of the aforementioned tank channels, and color-developing liquid is taken at the outlet of each of the aforementioned tank channels. Color development and reduction calibration is performed using a calibration solution.

[0028] The plasma reaction energy ratio between each of the aforementioned tank channels is determined based on the amount of calibration liquid consumed.

[0029] The aforementioned plasma-liquid discharge device includes a high-voltage electrode, a low-voltage electrode, and an insulating substrate. The first surface of the insulating substrate has multiple grooved channels, each with a depth on the micrometer scale. The high-voltage electrode and the low-voltage electrode form an electric field, and each grooved channel is located within this electric field. Therefore, the micrometer-deep grooved channels can provide liquid of a depth on the micrometer scale, corresponding to the depth of the liquid surface layer that the plasma's action area can cover. This allows the plasma's action area to encompass the liquid within the grooved channels, resulting in better treatment of all liquids flowing within the channels, thus comprehensively improving the plasma's treatment effect on gas-liquid two-phase media.

[0030] Other features and advantages of the embodiments of this application will be described in detail in the following detailed description section. Attached Figure Description

[0031] The accompanying drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the following detailed description to explain the embodiments of this application, but do not constitute a limitation on the embodiments of this application. In the drawings:

[0032] Figure 1 and Figure 2 The schematic diagram illustrates a structural schematic of a plasma gas-liquid discharge device according to an embodiment of this application;

[0033] Figure 3 This schematic diagram illustrates the structure of another plasma gas-liquid discharge device according to an embodiment of this application;

[0034] Figure 4 A schematic diagram of the structure of another plasma gas-liquid discharge device according to an embodiment of this application is shown.

[0035] Figure 5 A schematic diagram of the structure of another plasma gas-liquid discharge device according to an embodiment of this application is shown.

[0036] Figure 6 The illustration shows a schematic flowchart of a device control method according to an embodiment of this application;

[0037] Figure 7 The schematic diagram illustrates a flow chart of another device control method according to an embodiment of this application;

[0038] Figure 8 A schematic diagram of a reaction dwell time simulation curve according to an embodiment of this application is shown.

[0039] Explanation of reference numerals in the attached figures

[0040] 100—Plasma gas-liquid discharge device; 101—High-voltage electrode; 102—Low-voltage electrode; 103—Insulating substrate; 1031—Trough-type channel; 104—Hydrophobic and breathable membrane; 105—First valve. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only for illustration and explanation of the embodiments of this application and are not intended to limit the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0042] It should be noted that if the embodiments of this application involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicators will also change accordingly.

[0043] Furthermore, if the embodiments of this application involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, features defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the technical solutions of various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. If the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed in this application.

[0044] As described in the background art, for liquid media in gas-liquid two-phase discharge, the discharge process usually occurs at the gas-liquid interface, i.e., the liquid surface. The non-insulating nature of liquids means that ion charge rearrangement often occurs inside the liquid rather than the generation of plasma. Therefore, for liquid media, the effective area of ​​plasma is mainly concentrated on the liquid surface and cannot effectively cover the interior of the liquid, resulting in poor treatment effect on liquids (such as contaminants in the liquid).

[0045] To address this, one embodiment of this application provides a plasma gas-liquid discharge device 100, which may include a high-voltage electrode 101, a low-voltage electrode 102, and an insulating substrate 103; the first surface of the insulating substrate 103 is provided with a plurality of slotted channels 1031, each slotted channel 1031 having a depth of micrometers; the high-voltage electrode 101 and the low-voltage electrode 102 are used to form an electric field, and each slotted channel 1031 is located in the electric field.

[0046] The high-voltage electrode 101 and the low-voltage electrode 102 can form a discharge space to generate an electric field under the drive of an external power source. Specifically, the high-voltage electrode 101 can be connected to a high-voltage terminal A, and the low-voltage electrode 102 can be connected to a ground terminal B, thereby forming a discharge circuit for discharge. The high-voltage electrode 101 and the low-voltage electrode 102 can be made of metal, such as copper or stainless steel.

[0047] In practical applications, in order to improve the treatment effect of the liquid in the trough channel 1031 by the subsequent plasma gas-liquid discharge device 100, the trough channels 1031 can be parallel to each other, and the electric field direction is perpendicular to the extension direction of each trough channel 1031.

[0048] In this embodiment, to improve the discharge effect of the gas-liquid two-phase system, the high-voltage electrode 101 can be disposed on one side of the first surface of the insulating substrate 103, thereby getting closer to the liquid in the channel 103. The low-voltage electrode 102 can be disposed on one side of the first surface of the insulating substrate 103 or on one side of the second surface of the insulating substrate 103, depending on the electrode configuration, with the second surface opposite to the first surface.

[0049] For example, in one implementation, such as Figure 1 and Figure 2 As shown ( Figure 2 for Figure 1 (Right view), the high-voltage electrode 101 is a linear high-voltage electrode, and the low-voltage electrode 102 is a linear low-voltage electrode. The linear high-voltage electrode and the linear low-voltage electrode are located on the same target plane; the target plane is parallel to the first surface. More specifically, the extension direction of the linear high-voltage electrode is the same as the extension direction of the slotted channel 1031, and the extension direction of the linear low-voltage electrode is the same as the extension direction of the slotted channel 1031.

[0050] In practice, the linear high-voltage electrode and the linear low-voltage electrode are spaced apart by a first preset distance to form a discharge space. The first preset distance can be set according to actual needs, for example, it can be 10mm, 20mm, 30mm, etc.

[0051] In the above embodiments, a linear high-voltage electrode and a linear low-voltage electrode can constitute a set of electrodes. In practical applications, the plasma gas-liquid discharge device 100 may be provided with only one set of electrodes or multiple sets of electrodes, so that when there are a large number of slot channels 1031, each slot channel 1031 can be covered by the electric field.

[0052] In the case where multiple sets of electrodes are provided in the plasma gas-liquid discharge device 100, the order of the electrodes is as follows: high-voltage electrode 101, low-voltage electrode 102, high-voltage electrode 101, low-voltage electrode 102... Not only can an electric field be formed between the high-voltage electrode 101 and the low-voltage electrode 102 in the same set of electrodes, but an electric field can also be formed between the low-voltage electrode 102 in the previous set of electrodes and the high-voltage electrode 101 in the next set of electrodes. Therefore, each slotted channel 1031 can be covered by an electric field.

[0053] Or, for example, in another implementation, such as Figure 3 As shown, the high-voltage electrode 101 is a linear high-voltage electrode, and the low-voltage electrode 102 is a plate-shaped low-voltage electrode. The linear high-voltage electrode is located on one side of the first surface, and the plate-shaped low-voltage electrode is located on one side of the second surface of the insulating substrate 103.

[0054] In practice, the linear high-voltage electrode and the plate-shaped low-voltage electrode are spaced apart by a second preset distance to form a discharge space. The second preset distance can be set according to actual needs, for example, it can be 5mm, 10mm, etc.

[0055] Or, for example, in yet another implementation, such as Figure 4 As shown, the high-voltage electrode 101 is a plate-shaped high-voltage electrode, and the low-voltage electrode 102 is a plate-shaped low-voltage electrode. The plate-shaped high-voltage electrode is located on one side of the first surface, and the plate-shaped low-voltage electrode is located on one side of the second surface of the insulating substrate 103.

[0056] In practical implementation, a third preset distance is spaced between the plate-shaped high-voltage electrode and the plate-shaped low-voltage electrode to form a discharge space. The third preset distance can be set according to actual needs, for example, it can be 5mm, 10mm, etc.

[0057] The insulating substrate 103 can be used to form various slotted channels 1031. The cross-section of the slotted channel 1031 can be, but is not limited to, square, circular, etc. For example, the cross-section of the slotted channel 1031 can be a square of 100μm × 100μm. The insulating substrate 103 can be made of a material with good insulating properties, such as quartz, ceramic, polydimethylsiloxane, etc.

[0058] The grooved channels 1031 formed on the insulating substrate 103 can be used to carry and circulate liquid. Each grooved channel 1031 has an upward-facing opening, so that the liquid flowing through it can be exposed to the gas phase, thereby forming a gas-liquid two-phase discharge environment.

[0059] In this embodiment, by setting the depth of each channel 1031 to the micrometer level, the depth of the liquid flowing within the channel 1031 is also at the micrometer level; that is, the depth of the liquid to be processed is at the micrometer level. In other words, the channel 1031 with a depth at the micrometer level can be used to provide liquid to be processed with a depth at the micrometer level. The depth of the channel 1031 can, for example, be 10 μm to 500 μm.

[0060] As described in the background section of this application, for liquid media in gas-liquid two-phase discharge, the discharge process typically occurs at the liquid surface, and the plasma interaction region can only cover the liquid surface layer. However, this embodiment of the application, by setting a grooved channel 1031 with a depth on the micrometer scale, makes the depth of the liquid to be processed also on the micrometer scale, which is close to the aforementioned liquid surface depth. Therefore, the plasma interaction region can cover the liquid within the grooved channel 1031.

[0061] In other words, in existing technologies, the interior of a liquid (or the deeper layers of water) is too far from the liquid surface, preventing the plasma's effective area from covering the interior and resulting in poor treatment of the liquid's interior. For example, if the object to be treated is wastewater, only surface pollutants can be effectively treated, not those inside the water, leading to poor treatment results. However, in the trough channel 1031 of this embodiment, the liquid is only at a depth of micrometers, ensuring that the liquid within the channel is close to or within the surface layer, with no liquid too far from the surface. Therefore, the plasma's effective area can cover the liquid within the trough channel 1031, resulting in better treatment of the liquid flowing within it.

[0062] In practical implementation, liquid can be introduced into each trough channel 1031 through the first main pipeline C, and the liquid flowing out of each trough channel 1031 converges into the second main pipeline D. Each trough channel 1031, the first main pipeline C, the second main pipeline D, and other pipelines E used for distributing liquid to each trough channel 1031 can be configured as follows: Figure 5 As shown (top view).

[0063] In each of the trough channels 1031, the spacing between any two adjacent trough channels 1031 can also be on the micrometer scale, for example, the spacing is 0μm to 30μm. This can increase the density of the trough channels 1031, improve the utilization rate of plasma, and thus improve the liquid processing efficiency.

[0064] In practical applications of the plasma gas-liquid discharge device 100, each trough-type channel 1031 can be used to circulate liquids to be treated, such as sewage. These liquids contain substances that can consume plasma, such as pollutants in sewage.

[0065] It is understood that the plasma gas-liquid discharge device 100 provided in this application includes a high-voltage electrode 101, a low-voltage electrode 102, and an insulating substrate. The first surface of the insulating substrate 103 has multiple grooved channels 1031, each with a depth on the micrometer scale. The high-voltage electrode 101 and the low-voltage electrode 102 form an electric field, and each grooved channel 1031 is located within this electric field. Therefore, the micrometer-deep grooved channels 1031 can provide liquid of a depth on the micrometer scale, corresponding to the depth of the liquid surface layer that the plasma action area can cover. This allows the plasma action area to encompass the liquid within the grooved channels 1031, resulting in better processing of the liquid flowing within the grooved channels 1031, thereby improving the liquid processing efficiency.

[0066] In practical applications, to prevent liquid overflow in the trough channel 1031, which would increase the liquid load in other trough channels 1031 and consequently lead to poor liquid treatment in those channels, in one embodiment, the plasma gas-liquid discharge device 100 provided in this application further includes a hydrophobic and breathable membrane 104, such as... Figure 1 and Figure 2 As shown, the hydrophobic and breathable membrane 104 is attached to the first surface to cover each of the grooved channels 1031; the surface of the hydrophobic and breathable membrane 104 facing the grooved channels 1031 is hydrophobic, and the hydrophobic and breathable membrane 104 as a whole is breathable.

[0067] The hydrophobic and breathable membrane 104 has a hydrophobic surface facing the grooved channel 1031, which can prevent liquid from passing through to a certain extent, thereby preventing overflow in the grooved channel 1031.

[0068] The hydrophobic and breathable membrane 104 is breathable, allowing gas to come into contact smoothly with the liquid in the trough channel 1031, thus enabling smooth gas-liquid two-phase discharge.

[0069] Furthermore, in order to prevent liquid overflow in the channel 1031 from increasing the liquid load in other channels 1031, the surface of the hydrophobic and breathable membrane 104 facing away from the channel 1031 is hydrophilic.

[0070] Therefore, when liquid escapes from the grooved channel 1031 through the hydrophobic and breathable membrane 104, the surface of the membrane 104 in contact with the escaping liquid is hydrophilic, allowing the escaping liquid to return to the grooved channel 1031. This, to a certain extent, prevents the escaping liquid from flowing into other grooved channels 1031.

[0071] To facilitate control of the liquid flow rate in each channel 1031, in one embodiment, the plasma gas-liquid discharge device 100 provided in this application further includes a plurality of first valves 105, such as... Figure 5 As shown, each of the first valves 105 is respectively disposed on each of the grooved channels 1031.

[0072] The size of each first valve 105 can be at the micrometer level, so that the first valve 105 can be set on the trough channel 1031 to control the liquid flow rate in the trough channel 1031.

[0073] In a practical implementation, the portion of the trough channel 1031 near the inlet can be a closed pipe, thereby allowing the first valve 105 to be installed on the closed pipe. Correspondingly, the first main pipe C and other distribution pipes E used to distribute liquid to each trough channel 1031 can also be closed pipes.

[0074] In order to avoid the airflow affecting the plasma concentration in the corresponding area above each slotted channel 1031, in one embodiment, the plasma gas-liquid discharge device 100 provided in this application embodiment further includes an airflow control device (not shown in the figure). The airflow control device is located on one side of the first surface and is used to control the airflow direction in the gas phase discharge space, which is parallel to the extension direction of the slotted channel 1031.

[0075] The airflow control device can be used to control the direction of airflow in the gas phase discharge space, and it can also be used to supply gas.

[0076] In this embodiment, by using an airflow control device to control the airflow direction in the gas phase discharge space to be parallel to the extension direction of the grooved channel 1031, plasma generated in the region above the grooved channel 1031 can be prevented from moving to the region above other grooved channels 1031. This ensures that the plasma reaction energy in the region above each grooved channel 1031 is in a relatively stable state, and consequently, the plasma reaction energy in the liquid within each grooved channel 1031 can also be in a relatively stable state. Therefore, when the plasma gas-liquid discharge device 100 is subsequently controlled using the device control method described later, the liquid processing effect can be improved.

[0077] Based on the plasma gas-liquid discharge device provided in the above embodiments of this application, this application also provides a device control method, which can be used to control the plasma gas-liquid discharge device in the above embodiments. For example... Figure 6 As shown, the control method may include the following steps:

[0078] Step 201: Determine the target reaction dwell time for each trough channel.

[0079] In practice, the electric field between the high-voltage electrode and the low-voltage electrode can be adjusted to a certain intensity so that the electric field can excite the gas molecules in the discharge space to undergo an excited ionization process (the intensity of the excited ionization process can be monitored by parameters such as voltage and current). After achieving stable discharge, the target reaction residence time corresponding to each slot channel can be determined.

[0080] The target reaction residence time corresponding to each trough channel can be understood as the residence time of the liquid in each trough channel, that is, the time required for the liquid to pass through the trough channel.

[0081] For any given channel, its target reaction residence time is matched with the plasma reaction energy within that channel. In other words, by setting the liquid reaction residence time (i.e., the residence time, the time required for the liquid to pass through the channel) to its corresponding target reaction residence time, the plasma reaction energy within the channel is precisely matched with the amount of the substance to be processed in the liquid passing through the channel within the target reaction residence time. This prevents situations where the liquid reaction residence time is too short, resulting in poor processing efficiency, or too long, leading to plasma waste and low liquid processing efficiency.

[0082] In this embodiment of the application, the target reaction dwell time corresponding to each of the aforementioned slotted channels is determined, such as... Figure 7 As shown, it may include:

[0083] Step 2011: Determine the plasma reaction energy ratio between each of the aforementioned trough channels.

[0084] The plasma reaction energy ratio between each slot channel can be denoted as n1:n2:n3:n4:n5...

[0085] In specific implementation, determining the plasma reaction energy ratio between each of the aforementioned trough channels may include: introducing a colorimetric solution into each of the aforementioned trough channels, taking a sample of the colorimetric solution at the outlet of each of the aforementioned trough channels, and performing colorimetric reduction calibration using a calibration solution; and determining the plasma reaction energy ratio between each of the aforementioned trough channels based on the amount of calibration solution consumed.

[0086] In the above embodiments, the color developing solution contains a substance that can react with plasma, and the color changes after the color developing solution reacts with the plasma. The color developing solution generates reaction products after reacting with the plasma, and the standardizing substance in the standardizing solution can react with these reaction products. Therefore, the reaction energy ratio of the plasma between each of the tank channels can be determined based on the amount of standardizing substance consumed in the standardizing solution.

[0087] The colorimetric solution can be, for example, a potassium iodide solution, and the standardization solution can be, for example, a sodium thiosulfate solution. Potassium iodide solution is a colorless and transparent solution. When potassium iodide reacts with plasma, elemental iodine is generated, and the colorimetric solution develops color. When using sodium thiosulfate solution for standardization, sodium thiosulfate can react with elemental iodine. Therefore, the amount of sodium thiosulfate consumed corresponds to the amount of plasma consumed by potassium iodide in the colorimetric solution, thereby allowing the determination of the plasma reaction energy ratio between each of the tank channels.

[0088] Generally, the plasma concentration is higher closer to the electrode, resulting in greater plasma reaction energy in the liquid within the channel closer to the electrode. Consequently, the color development of the developing solution is more pronounced in the channel closer to the electrode. If, in practical applications, the color development of the developing solution is not pronounced in any of the channels, especially in the channels near the electrode, it indicates that the electrode may be too far from the insulating substrate, preventing most of the plasma from entering the liquid within the channels and resulting in low plasma utilization. In this case, the distance between the electrode and the insulating substrate can be reduced until a more pronounced color development is achieved in each channel, especially in the channels near the electrode.

[0089] Step 2012: Select a first target channel, a second target channel, and a third target channel from the various channel types according to the reaction energy ratio.

[0090] Wherein, the first target trough channel is the trough channel with the highest plasma reaction energy among all the trough channels, the second target trough channel is the trough channel with the lowest plasma reaction energy among all the trough channels, and the plasma reaction energy of the third target trough channel is located between the plasma reaction energy of the first target trough channel and the plasma reaction energy of the second target trough channel.

[0091] Specifically, a first target channel, a second target channel, and multiple third target channels can be determined based on the plasma reaction energy ratios n1:n2:n3:n4:n5... among the various channel types. To ensure more accurate simulation curves of reaction dwell time, the number of third target channels is preferably multiple, such as 3, 4, or 5.

[0092] Step 2013: Introduce the target solution into the first target tank channel, the second target tank channel, and the third target tank channel, and determine the first reaction residence time corresponding to the first target tank channel, the second target tank channel, and the third target tank channel when the treatment effect of the target solution reaches the preset effect.

[0093] The target solution can be the liquid to be processed by the plasma gas-liquid discharge device, such as ammonium sulfite solution, calcium sulfite solution, azo dye (AO7) solution, or other contaminant solutions. The first target tank channel, the second target tank channel, and the third target tank channel are all filled with the same target solution at the same concentration.

[0094] Based on Q = V / t (where Q is the flow rate, V is the volume of the channel, and t is the time the liquid stays in the channel, i.e., the time it takes to pass through the channel), the residence time of the liquid in the channel can be controlled by controlling the flow rate of the liquid in the channel.

[0095] Taking the first target tank channel as an example, under a constant applied voltage, the residence time of the target solution in the channel is controlled by controlling the flow rate of the target solution. Simultaneously, the solution at the outlet of the first target tank channel is monitored to determine the remaining concentration of the substance to be treated (such as pollutants).

[0096] The treatment effect of the target solution corresponding to different residence times is recorded, and the treatment effect can be characterized by the residual concentration of the substance to be treated in the solution. As the residence time increases, the reaction degree of the target solution gradually deepens, but the deepening trend gradually slows down with increasing residence time, and the treatment effect of the target solution tends to be optimal, eventually reaching a plateau. The preset effect can correspond to this plateau, and correspondingly, the residual concentration of the substance to be treated in the solution at the outlet of the first target tank channel is the concentration corresponding to the plateau. The trend of the treatment effect of the target solution in the first target tank channel can be as follows: Figure 8 As shown.

[0097] The first reaction residence time corresponding to the first target tank channel can be considered as the time corresponding to when the treatment effect of the target solution initially reaches a plateau. For example... Figure 8 In the first reaction, the dwell time is the duration corresponding to the black dots in the trend line of the processing effect of the first target channel.

[0098] The process for determining the first reaction residence time corresponding to the second target tank channel and the third target tank channel can refer to the process for determining the first reaction residence time of the first target tank channel described above, and will not be repeated here. The treatment effect trends of the target solution in the second target tank channel and the third target tank channel can be described as follows: Figure 8 As shown. Figure 8In the context of the second target channel, the first reaction dwell time can be the dwell time corresponding to the black dots in the processing effect trend line of the second target channel. Similarly, the first reaction dwell time corresponding to the third target channel can be the dwell time corresponding to the black dots in the processing effect trend line of the third target channel.

[0099] The first reaction dwell time corresponding to the first target trough channel, the second target trough channel, and the third target trough channel is the target reaction dwell time corresponding to the first target trough channel, the second target trough channel, and the third target trough channel, respectively.

[0100] Step 2014: Based on the first reaction dwell time and the relative positional relationship between the second target trough, the third target trough channel and the first target trough channel, plot the reaction dwell time simulation curve.

[0101] In practical implementation, the position of the first target channel can be recorded as the starting point, i.e., the distance is 0. In the embodiments of this application, the relative positional relationship between the second target channel, the third target channel, and the first target channel can refer to the distance between the second target channel and the first target channel, and the distance between the third target channel and the first target channel.

[0102] Furthermore, based on the first reaction residence time corresponding to the first target channel, the second target channel, and the third target channel, respectively, the distance between the second target channel and the first target channel, and the distance between the third target channel and the first target channel, a curve relating the target reaction residence time to the relative position of the channels can be plotted. Simulating this curve yields a simulated reaction residence time curve, which can be obtained as follows: Figure 8 The dashed curve in the figure shows the reaction residence time simulation curve. The general formula for this simulation curve is: D(t)=a*t 2 +b*t+D0, where t is the target reaction dwell time, D(t) is the distance between each channel and the first target channel, and the specific values ​​of a, b and D0 are obtained from simulation.

[0103] Step 2015: Determine the target reaction residence time for each of the trough channels based on the simulated reaction residence time curve and the relative positional relationship between each of the trough channels.

[0104] Generally speaking, the distance between each channel and the first target channel is known, and the target reaction residence time corresponding to each channel can be determined based on the above-mentioned reaction residence time simulation curve.

[0105] Step 202: Based on the target reaction residence time, control the reaction residence time of the liquid in each of the trough channels.

[0106] That is, the reaction residence time of the liquid in each tank channel can be controlled (i.e., the time required for the liquid to pass through the tank channel), which is the target reaction residence time corresponding to each tank channel.

[0107] In practice, the reaction residence time of the liquid in each tank channel can be controlled by controlling the flow rate through the first valve.

[0108] To facilitate the explanation of the effects of the plasma gas-liquid discharge device and device control method provided in the embodiments of this application, the following will be described in conjunction with specific embodiments and comparative examples.

[0109] In the following embodiments and comparative examples, linear high-voltage electrodes and linear low-voltage electrodes are used, with a spacing of 5 mm between them. The placement of the linear high-voltage and low-voltage electrodes can be referred to the foregoing description and will not be repeated here. Forty parallel slotted channels are formed on the insulating substrate, numbered sequentially as 1, 2, 3, 4, 5...40. Each slotted channel has a 100 μm × 100 μm square cross-section, and the spacing between any two adjacent slotted channels is 20 μm.

[0110] Under an applied voltage of 18kV, potassium iodide colorimetric solution was introduced into each channel, and the residence time of the potassium iodide colorimetric solution in the channel was controlled to be 4 minutes. Colorimetric solution was collected at the outlet of each channel and calibrated using sodium thiosulfate standard solution. Calculations show that, in order of arrangement, the proportion of calibration solution consumed in calibrating the colorimetric solution sampled from the outlet of each tank channel is 0.97:0.99:1:0.99:0.99:0.97:0.93:0.88:0.86:0.85:0.81:0.72:0.68:0.65:0.63:0.57:0.5:0.46:0.4:0.3:0.32:0.4:0.47:0.53:0.59:0.63:0.68:0.71:0.75:0.79:0.83:0.85:0.88:0.93:0.97:0.98:0.99:1.1:0.98:0.95. Based on the calibration fluid consumption ratio, the tank channel with the largest calibration fluid consumption is selected as the first target tank channel, the tank channel with the smallest calibration fluid consumption is selected as the second target tank channel, and four third target tank channels are selected, with the calibration fluid consumption of the four third target tank channels falling between that of the first target tank channel and the second target tank channel.

[0111] Example 1

[0112] Under a discharge condition with an applied voltage of 18kV, ammonium sulfite solution is introduced into the first target tank channel. By controlling the flow rate of the ammonium sulfite solution in the first target tank channel, the reaction residence time of the ammonium sulfite solution in the channel is controlled, and the target reaction residence time corresponding to the first target tank channel when the reaction tends to be stable is determined.

[0113] In the same manner, the target reaction dwell time corresponding to the second target channel and the target reaction dwell time corresponding to the four third target channels were obtained.

[0114] Based on the target reaction dwell times corresponding to the first target channel, the second target channel, and the four third target channels, the distance between the second target channel and the first target channel, and the distance between the four third target channels and the first target channel, a curve relating the target reaction dwell time to the relative positions of the channels is plotted. This curve is then simulated, yielding the simulated reaction dwell time curve D(t) = 134.5 - 39.4t + 2.9t. 2 .

[0115] Based on the above simulation curves of reaction residence time, the target reaction residence time for other tank channels is determined, and the reaction residence time of the ammonium sulfite solution in each tank channel is controlled to its respective target reaction residence time.

[0116] Calculations show that after controlling the ammonium sulfite solution in each channel as described above, the total flow rate of all channels is 17 μL / min.

[0117] Samples were taken from the second main pipeline where the liquid from each of the various channel outlets converged to determine the concentration of ammonium sulfite in the treated liquid. The calculated removal rate of ammonium sulfite was 86%.

[0118] Example 2

[0119] Under a discharge condition with an applied voltage of 20kV, a calcium sulfite solution is introduced into the first target channel. By controlling the flow rate of the calcium sulfite solution in the first target channel, the reaction residence time of the calcium sulfite solution in the channel is controlled, and the target reaction residence time corresponding to the first target channel when the reaction tends to be stable is determined.

[0120] In the same manner, the target reaction dwell time corresponding to the second target channel and the target reaction dwell time corresponding to the four third target channels were obtained.

[0121] Based on the target reaction dwell times corresponding to the first target channel, the second target channel, and the four third target channels, the distance between the second target channel and the first target channel, and the distance between the four third target channels and the first target channel, a curve showing the relationship between the target reaction dwell time and the relative position of the channels is plotted. This curve is then simulated, yielding the simulated reaction dwell time curve D(t) = 142.7 - 43.6t + 3.8t. 2 .

[0122] Based on the above simulation curves of reaction residence time, the target reaction residence time for other tank channels is determined, and the reaction residence time of the calcium sulfite solution in each tank channel is controlled to its respective target reaction residence time.

[0123] Calculations show that after controlling the calcium sulfite solution in each channel as described above, the total flow rate of all channels is 18.7 μL / min.

[0124] Samples were taken from the second main pipeline where the liquid from each of the various channel outlets converged to determine the concentration of calcium sulfite in the treated liquid. The calculated removal rate of calcium sulfite was 81%.

[0125] Example 3

[0126] Under a discharge condition with an applied voltage of 20kV, AO7 solution is introduced into the first target tank channel. By controlling the flow rate of the AO7 solution in the first target tank channel, the reaction residence time of the AO7 solution in the channel is controlled, and the target reaction residence time corresponding to the first target tank channel when the reaction tends to stabilize is determined.

[0127] In the same manner, the target reaction dwell time corresponding to the second target channel and the target reaction dwell time corresponding to the four third target channels were obtained.

[0128] Based on the target reaction dwell times corresponding to the first target channel, the second target channel, and the four third target channels, the distance between the second target channel and the first target channel, and the distance between the four third target channels and the first target channel, a curve showing the relationship between the target reaction dwell time and the relative position of the channels is plotted. This curve is then simulated, yielding the simulated reaction dwell time curve D(t) = 128.3 - 30.1t + 1.7t. 2 .

[0129] Based on the above simulation curves of reaction residence time, the target reaction residence time for other tank channels is determined, and the reaction residence time of the AO7 solution in each tank channel is controlled to its corresponding target reaction residence time.

[0130] After calculation, the total flow rate of all AO7 solutions in each channel was 22.3 μL / min after the above control measures were applied.

[0131] Samples were taken from the second main pipeline where the liquid from each of the various channel outlets converged to determine the concentration of AO7 in the treated liquid. The calculated AO7 removal rate was 70%.

[0132] Comparative Example 1

[0133] With an applied voltage of 18 kV, ammonium sulfite solution was introduced into each tank channel at the same concentration as in Example 1. The flow rate of the ammonium sulfite solution in each tank channel was one-fortieth of 17 μL / min.

[0134] Samples were taken from the second main pipeline where the liquid from each of the various channel outlets converged to test the concentration of ammonium sulfite in the treated liquid. The calculated removal rate of ammonium sulfite was 60%.

[0135] Comparative Example 2

[0136] With an applied voltage of 20 kV, calcium sulfite solution was introduced into each channel at the same concentration as in Example 2. The flow rate of the calcium sulfite solution in each channel was one-fortieth of 18.7 μL / min.

[0137] Samples were taken from the second main pipeline where the liquid from each of the various channel outlets converged to determine the concentration of calcium sulfite in the treated liquid. The calculated removal rate of calcium sulfite was 56%.

[0138] Comparative Example 3

[0139] With an applied voltage of 20 kV, AO7 solution was introduced into each tank channel at the same concentration as in Example 3. The flow rate of the AO7 solution in each tank channel was one-fortieth of 22.3 μL / min.

[0140] Samples were taken from the second main pipeline where the liquid from each of the various channel outlets converged to determine the concentration of AO7 in the treated liquid. The calculated AO7 removal rate was 50%.

[0141] Based on the comparison results of Example 1 and Comparative Example 2, Example 2 and Comparative Example 2, and Example 3 and Comparative Example 3, it can be seen that the device control method provided in the embodiments of this application can effectively improve the liquid processing effect.

[0142] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0143] The above are merely embodiments of this application and are not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A device control method, characterized in that, The control method is used to control a plasma gas-liquid discharge device. The discharge device includes a high-voltage electrode, a low-voltage electrode, an insulating substrate, and a hydrophobic and breathable membrane. The first surface of the insulating substrate has multiple grooved channels, each with a depth on the micrometer scale. The high-voltage electrode and the low-voltage electrode form an electric field, and each grooved channel is located within this electric field. Liquid is introduced into each grooved channel through a first main pipeline, and the liquid flows out of each grooved channel and converges into a second main pipeline. The hydrophobic and breathable membrane is attached to the first surface to cover each grooved channel. The surface of the hydrophobic and breathable membrane facing the grooved channels is hydrophobic, and the membrane as a whole is breathable, allowing gas in the gas phase to contact the liquid in each grooved channel. The surface of the hydrophobic and breathable membrane facing away from the grooved channels is hydrophilic. The control method includes: Determine the plasma reaction energy ratio between each of the aforementioned trough channels; Based on the reaction energy ratio, a first target channel, a second target channel, and a third target channel are selected from each of the aforementioned channel types; wherein, the first target channel is the channel with the highest plasma reaction energy among all the aforementioned channel types, the second target channel is the channel with the lowest plasma reaction energy among all the aforementioned channel types, and the plasma reaction energy of the third target channel is located between the plasma reaction energy of the first target channel and the plasma reaction energy of the second target channel; A target solution is introduced into the first target tank channel, the second target tank channel, and the third target tank channel. When the treatment effect of the target solution reaches a preset effect, the target solution is allowed to remain in the first reaction for a first time in the first target tank channel, the second target tank channel, and the third target tank channel, respectively. The target solution contains a substance that can consume plasma. Based on the first reaction dwell time and the relative positional relationship between the second target trough, the third target trough channel and the first target trough channel, a reaction dwell time simulation curve is plotted; Based on the simulated reaction residence time curve and the relative positional relationship between each of the trough channels, the target reaction residence time corresponding to each of the trough channels is determined; Based on the target reaction residence time, the reaction residence time of the liquid in each of the trough channels is controlled.

2. The device control method according to claim 1, characterized in that, The high-voltage electrode is a linear high-voltage electrode, and the low-voltage electrode is a linear low-voltage electrode. The linear high-voltage electrode and the linear low-voltage electrode are located on the same target plane; the target plane is parallel to the first surface.

3. The device control method according to claim 1, characterized in that, The high-voltage electrode is a linear high-voltage electrode, and the low-voltage electrode is a plate-shaped low-voltage electrode. The linear high-voltage electrode is located on one side of the first surface, and the plate-shaped low-voltage electrode is located on one side of the second surface of the insulating substrate; the second surface is opposite to the first surface.

4. The device control method according to claim 1, characterized in that, The high-voltage electrode is a plate-shaped high-voltage electrode, and the low-voltage electrode is a plate-shaped low-voltage electrode. The plate-shaped high-voltage electrode is located on one side of the first surface, and the plate-shaped low-voltage electrode is located on one side of the second surface of the insulating substrate; the second surface is opposite to the first surface.

5. The device control method according to any one of claims 1-4, characterized in that, The slotted channels are parallel to each other, and the direction of the electric field is perpendicular to the extension direction of each slotted channel.

6. The device control method according to claim 1, characterized in that, The discharge device also includes a plurality of first valves, each of which is respectively disposed on each of the groove-shaped channels.

7. The device control method according to claim 1, characterized in that, The spacing between any two adjacent slot channels is on the order of micrometers.

8. The device control method according to claim 1, characterized in that, The discharge device further includes an airflow control device located on one side of the first surface. The airflow control device is used to control the airflow direction in the gas phase discharge space, which is parallel to the extension direction of the slotted channel.

9. The device control method according to claim 1, characterized in that, Determining the plasma reaction energy ratio between each of the aforementioned trough channels includes: Color-developing liquid is introduced into each of the aforementioned tank channels, and color-developing liquid is taken at the outlet of each of the aforementioned tank channels. Color development and reduction calibration is performed using a calibration solution. The plasma reaction energy ratio between each of the aforementioned tank channels is determined based on the amount of calibration liquid consumed.

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