Hafnium-based ferroelectric device and performance regulation and control method thereof

Abstract

The invention provides a hafnium-based ferroelectric device and a performance regulation and control method thereof. The hafnium-based ferroelectric device can be applied to the technical field of ferroelectric film modification. The device comprises a substrate layer; the bottom electrode layer is positioned on the substrate layer; the hafnium-based ferroelectric film is located on the bottom electrode layer, and the coercive electric field intensity parameter of the hafnium-based ferroelectric film is improved through particle beam irradiation adjustment; and a top electrode layer on the hafnium-based ferroelectric film. The performance regulation and control method comprises the following steps: depositing a bottom electrode layer on a substrate layer; depositing a hafnium-based ferroelectric film on the bottom electrode layer; depositing a top electrode layer on the hafnium-based ferroelectric film to obtain an intermediate device; and performing rapid annealing on the intermediate device to obtain the hafnium-based ferroelectric device. A particle beam is used for irradiating the hafnium-based ferroelectric device, the coercive field intensity parameter of a hafnium-based ferroelectric film in the hafnium-based ferroelectric device is adjusted, and the target hafnium-based ferroelectric device with the performance adjusted and controlled is obtained.

Description

Technical Field

[0001] The present disclosure relates to the technical field of ferroelectric thin films, and more specifically, to a hafnium-based ferroelectric device and a method for controlling its performance. Background Art

[0002] Memory is one of the three pillars of the semiconductor industry, and hafnium-based ferroelectric materials have become one of the key candidate materials for the next generation of new ferroelectric memory due to their high compatibility with semiconductor processes and mature preparation processes, bringing new opportunities for the development of ferroelectric storage technology.

[0003] In the process of realizing the concept of the present disclosure, the inventors discovered that the related art has reliability problems such as poor cycle durability of hafnium-based ferroelectric thin film materials and devices. Summary of the invention

[0004] In view of this, the present disclosure provides a hafnium-based ferroelectric device and a method for controlling its performance.

[0005] One aspect of the present disclosure provides a hafnium-based ferroelectric device and a method for controlling its performance, comprising: a substrate layer; a bottom electrode layer located on the substrate layer; a hafnium-based ferroelectric film located on the bottom electrode layer, wherein the coercive electric field strength parameter of the hafnium-based ferroelectric film is improved by particle beam irradiation regulation; and a top electrode layer located on the hafnium-based ferroelectric film.

[0006] According to an embodiment of the present disclosure, the material of the hafnium-based ferroelectric film includes one of Zr-doped HfO2, La-doped HfO2, Al-doped HfO2, Si-doped HfO2 and Y-doped HfO2; and the target hafnium-based ferroelectric film has a thickness ranging from 5 nm to 50 nm.

[0007] According to an embodiment of the present disclosure, the material of the bottom electrode layer includes at least one of titanium nitride, tungsten, gold and ruthenium; the thickness range of the bottom electrode layer is 30 nm~100 nm; the material of the top electrode layer includes at least one of titanium nitride, tungsten, gold and ruthenium; the thickness range of the top electrode layer is 20 nm~40 nm; and the material of the substrate layer includes doped silicon.

[0008] Another aspect of the present disclosure provides a method for controlling the performance of a hafnium-based ferroelectric device, comprising: depositing a bottom electrode layer on a substrate layer; depositing a hafnium-based ferroelectric thin film on the bottom electrode layer; depositing a top electrode layer on the hafnium-based ferroelectric thin film to obtain an intermediate device; and heat-treating the intermediate device to obtain a hafnium-based ferroelectric device; and irradiating the hafnium-based ferroelectric device with a particle beam to adjust the coercive electric field strength parameters of the hafnium-based ferroelectric thin film in the hafnium-based ferroelectric device to obtain a target hafnium-based ferroelectric device after performance control.

[0009] According to an embodiment of the present disclosure, a hafnium-based ferroelectric device is irradiated with a particle beam to adjust the coercive electric field strength parameters of the hafnium-based ferroelectric film in the hafnium-based ferroelectric device, thereby obtaining a target hafnium-based ferroelectric device with regulated performance, including: adjusting the charged state and oxygen vacancy concentration of intrinsic oxygen vacancies in the hafnium-based ferroelectric film by irradiating the hafnium-based ferroelectric device with a particle beam, thereby adjusting the coercive electric field strength parameters.

[0010] According to an embodiment of the present disclosure, the particle beam is a neutron beam, a proton beam, a He 2+ Ion beam, electron beam and 60 Co A type of gamma ray.

[0011] According to the embodiment of the present disclosure, the irradiation energy range of the neutron beam is 1×10 -7 MeV~1×10 2 MeV; the irradiation energy range of the proton beam is 1×10 -1 keV ~1×50 MeV; the irradiation energy range of the electron beam is 1×10 -1 keV~10MeV; 60 The ion dose of Co γ-rays ranges from 1 Gy to 1×10 5 Gy; He 2+ The ion beam irradiation energy ranges from 10 keV to 1 MeV.

[0012] According to the embodiment of the present disclosure, the particle fluence rate of the neutron beam ranges from 1×10 5 n / cm 2 / s ~1×10 14 n / cm 2 / s; the particle fluence rate range of the proton beam is 1×10 7 p / cm 2 / s~1×10 16 p / cm 2 / s; the particle fluence rate of the electron beam ranges from 1×10 7 p / cm 2 / s ~1×10 16 p / cm 2 / s; 60 The Co γ-ray fluence rate range is 1×10 5 p / cm 2 / s~1×10 15 p / cm 2 / s;He 2+ The particle fluence rate of the ion beam ranges from 1×10 8 ions / cm 2 / s ~1×1015 ions / cm 2 / s.

[0013] According to an embodiment of the present disclosure, the irradiation angle range of the particle beam is 5°~90°.

[0014] According to an embodiment of the present disclosure, the intermediate device is rapidly annealed to obtain a hafnium-based ferroelectric device, including: rapidly annealing the intermediate device, heating time ranging from 10 s to 60 s, and heating temperature ranging from 300° C. to 700° C.

[0015] According to the embodiments of the present disclosure, a hafnium-based ferroelectric thin film is treated with a particle beam to generate an ionizing radiation effect and a displacement radiation effect, and the charging characteristics and concentration of the intrinsic oxygen vacancies in the hafnium-based ferroelectric thin film are specifically regulated, thereby accurately adjusting the coercive electric field strength parameters of the hafnium-based ferroelectric thin film, reducing the polarization reversal barrier of the hafnium-based ferroelectric thin film, and improving the cycle durability of the hafnium-based ferroelectric device, thereby improving the reliability of the hafnium-based ferroelectric device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0017] Figure 1 The structural diagram of a hafnium-based ferroelectric device according to an embodiment of the present disclosure is schematically shown.

[0018] Figure 2 The flowchart of the performance control method of the hafnium-based ferroelectric device according to the embodiment of the present disclosure is schematically shown.

[0019] Figure 3 Schematically shows the coercive electric field strength (E) of the hafnium-based ferroelectric device at different irradiation injection rates according to an embodiment of the present disclosure. c ) values.

[0020] Figure 4 The flowchart of the preparation and performance testing of the hafnium-based ferroelectric device according to the embodiment of the present disclosure is schematically shown. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0022] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0023] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0024] When using expressions such as "at least one of A, B, and C, etc.", they should generally be interpreted according to the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0025] In the embodiments of the present disclosure, the collection, updating, analysis, processing, use, transmission, provision, disclosure, storage, etc. of the data involved (for example, including but not limited to user personal information) are in compliance with the provisions of relevant laws and regulations, are used for legitimate purposes, and do not violate public order and good morals. In particular, necessary measures are taken for user personal information to prevent illegal access to user personal information data and maintain the security of user personal information, network security, and national security.

[0026] In the embodiments of the present disclosure, the user's authorization or consent is obtained before obtaining or collecting the user's personal information.

[0027] Ferroelectric memory represented by perovskite ferroelectric materials can meet the application needs of most semiconductor industries. However, with the advent of the post-Moore era, due to the poor compatibility of perovskite ferroelectric materials in related technologies with semiconductor processes and significant size effects, ferroelectric memories in related technologies are difficult to miniaturize and integrate, and have long faced development obstacles such as high manufacturing costs and low storage density.

[0028] Although hafnium-based ferroelectric materials have advantages such as high compatibility with semiconductor processes and mature preparation processes, hafnium-based ferroelectric films have a relatively large coercive electric field strength (E c ) will lead to poor cycle durability of hafnium-based ferroelectric devices, thus hindering the promotion and application of hafnium-based ferroelectric thin film materials. c and the breakdown electric field strength (E bd ) is relatively close, specifically E c / E bd ≈12.5%~50%, while the larger E c This will cause hafnium-based ferroelectric devices to cause considerable damage to the material itself after each polarization reversal. Related technologies require a higher external electric field to perform polarization reversal, but this also causes hafnium-based ferroelectric devices to have higher power consumption and lower read and write speeds.

[0029] Based on this, the inventors found that the intrinsic oxygen vacancies (V O ) concentration affects the room temperature stable phase structure of hafnium-based ferroelectric films, which is beneficial to reducing the polarization reversal barrier of hafnium-based ferroelectric films.

[0030] To reduce the E c In order to solve the reliability problem of ferroelectric devices, the related technology usually adjusts the V in the hafnium-based ferroelectric film by changing the type and concentration of doping elements, electrode type and rapid annealing conditions. O and its properties, for hafnium-based ferroelectric thin films V O The changes in its characteristics belong to collective regulation behavior, and it is difficult to V O Other microscopic physical properties can be precisely controlled.

[0031] Based on this, in order to at least partially solve the technical problems existing in the related art, an embodiment of the present disclosure provides a hafnium-based ferroelectric device, including: a substrate layer; a bottom electrode layer located on the substrate layer; a hafnium-based ferroelectric thin film located on the bottom electrode layer, wherein the coercive electric field strength parameter of the hafnium-based ferroelectric thin film is improved by particle beam irradiation adjustment; and a top electrode layer located on the hafnium-based ferroelectric thin film.

[0032] Figure 1 The structural diagram of a hafnium-based ferroelectric device according to an embodiment of the present disclosure is schematically shown.

[0033] like Figure 1 As shown, the device 100 includes a substrate layer 110, a bottom electrode layer 120, a hafnium-based ferroelectric thin film 130, and a top electrode layer 140, wherein the top electrode layer includes a first top electrode 141 and a second top electrode 142. For example, the first top electrode 141 and the second top electrode 142 may be made of the same material or different materials, which is not limited here.

[0034] According to the embodiments of the present disclosure, the substrate layer 110 can provide mechanical support for the device. In order to ensure the stability and reliability of the device, the thickness, flatness and material properties of the substrate layer can be set according to actual needs.

[0035] According to an embodiment of the present disclosure, the bottom electrode layer 120 is located between the substrate layer and the hafnium-based ferroelectric thin film, and is used to provide a current channel so that current can smoothly pass through the hafnium-based ferroelectric thin film.

[0036] According to an embodiment of the present disclosure, the material of the hafnium-based ferroelectric thin film 130 may be hafnium dioxide doped with other elements, and based on this, the hafnium-based ferroelectric thin film 130 has excellent ferroelectric properties.

[0037] According to the embodiments of the present disclosure, the inventors found that the intrinsic oxygen vacancies (V O ) concentration increases, the room temperature stable phase structure of the hafnium-based ferroelectric film will be transformed from the original monoclinic m-phase (P21 / c) structure to the tetragonal t-phase (P42 / nmc) structure. Stabilizing the intermediate t-phase structure of the hafnium-based ferroelectric film is beneficial to reducing the polarization reversal barrier of the hafnium-based ferroelectric film, thereby reducing E c At the same time, V O Charged to V O 2+ It is also beneficial to reduce the polarization reversal barrier of hafnium-based ferroelectric films, thereby reducing E c .

[0038] In some embodiments, hafnium oxide-based ferroelectric crystals can be prepared by selectively doping elements such as Zr, La, Al, Si, and Y. In some embodiments, the interface defect concentration can be reduced by treating the bottom electrode with ozone, thereby improving the interface quality and optimizing the performance of the film and the device. In some embodiments, hafnium-based ferroelectric films can be prepared under low thermal budget conditions to optimize the free V O However, the inventors found that the method in this embodiment has no significant effect on the distribution and quantity of the hafnium-based ferroelectric film V O The change of its charged characteristics belongs to collective regulation behavior, that is, the V O concentration and distribution, it is difficult to V O The order of arrangement, charge characteristics, concentration and other properties can be precisely controlled.

[0039] According to an embodiment of the present disclosure, the particle beam may include protons, neutrons or He 2+ Ions and other particles can produce radiation effects, namely ionizing radiation effects and displacement radiation effects. The synergistic effect can produce a specific crystal phase structure inside the hafnium-based ferroelectric thin film materials and devices, and specifically reduce the E of the hafnium-based ferroelectric thin film. c For example, the average proton beam fluence rate can be 4×10 9 p / cm 2 .

[0040] According to the embodiments of the present disclosure, the ionizing radiation effect can make the intrinsic oxygen vacancies (V O ) is charged, which reduces the polarization reversal barrier to a certain extent; at the same time, the displacement radiation effect can create new point defects to increase V OTherefore, the E of hafnium-based ferroelectric films can be selectively controlled by adjusting the energy, injection volume and incident angle of the irradiated ions. c size.

[0041] According to an embodiment of the present disclosure, the top electrode layer includes two top electrodes, which may be made of a conductive material and together with the bottom electrode layer form a complete current channel.

[0042] According to the embodiments of the present disclosure, a hafnium-based ferroelectric thin film is treated with a particle beam to generate an ionizing radiation effect and a displacement radiation effect, and the arrangement order, charge characteristics and concentration of the intrinsic oxygen vacancies in the hafnium-based ferroelectric thin film are specifically regulated, thereby accurately adjusting the coercive electric field strength parameters of the hafnium-based ferroelectric thin film, reducing the polarization reversal barrier of the hafnium-based ferroelectric thin film, and improving the cycle durability of the hafnium-based ferroelectric device, thereby improving the reliability of the hafnium-based ferroelectric device.

[0043] According to an embodiment of the present disclosure, the material of the hafnium-based ferroelectric film includes one of Zr-doped HfO2, La-doped HfO2, Al-doped HfO2, Si-doped HfO2 and Y-doped HfO2; and the target hafnium-based ferroelectric film has a thickness ranging from 5 nm to 50 nm.

[0044] According to the embodiments of the present disclosure, by setting the doping elements and the film thickness of the hafnium-based ferroelectric film, it is helpful to adjust the ferroelectric properties of the hafnium-based ferroelectric film, thereby facilitating the improvement of the cycle durability of the hafnium-based ferroelectric device.

[0045] According to an embodiment of the present disclosure, the material of the bottom electrode layer includes at least one of titanium nitride, tungsten, gold and ruthenium; the thickness range of the bottom electrode layer is 30 nm~100 nm; the material of the top electrode layer includes at least one of titanium nitride, tungsten, gold and ruthenium; the thickness range of the top electrode layer is 20 nm~40 nm; and the material of the substrate layer includes doped silicon.

[0046] According to the embodiments of the present disclosure, by setting the thickness and material of the top electrode layer and the bottom electrode layer and the material doping elements of the substrate layer, it is helpful to regulate the electrode conductivity, thereby facilitating obtaining a more stable and reliable hafnium-based ferroelectric device.

[0047] Based on the above hafnium-based ferroelectric device, the embodiment of the present disclosure also provides a method for preparing a hafnium-based ferroelectric device. Figure 2~Figure 4 The method for preparing the device 100 of the above embodiment is described.

[0048] Figure 2 The flowchart of the method for preparing a hafnium-based ferroelectric device according to an embodiment of the present disclosure is schematically shown.

[0049] like Figure 2As shown, the method includes operations S210 to S250.

[0050] In operation S210 , a bottom electrode layer is deposited on a substrate layer.

[0051] In operation S220, a hafnium-based ferroelectric thin film is deposited on the bottom electrode layer.

[0052] In operation S230 , a top electrode layer is deposited on the hafnium-based ferroelectric thin film to obtain an intermediate device.

[0053] In operation S240 , the intermediate device is rapidly annealed to obtain a hafnium-based ferroelectric device.

[0054] In operation S250, the hafnium-based ferroelectric device is irradiated with a particle beam to adjust a coercive electric field intensity parameter of a hafnium-based ferroelectric thin film in the hafnium-based ferroelectric device, thereby obtaining a target hafnium-based ferroelectric device with adjusted performance.

[0055] According to the embodiments of the present disclosure, the bottom electrode layer electrode may be deposited by magnetron sputtering, for example, the deposition process may take 5 to 30 minutes, preferably 10 minutes.

[0056] According to the embodiments of the present disclosure, a hafnium-based ferroelectric thin film may be grown on the surface of the bottom electrode layer using methods such as atomic layer deposition (ALD), and a top electrode layer may be deposited using methods such as magnetron sputtering.

[0057] According to the embodiments of the present disclosure, by performing heat treatment on the intermediate device, the intermediate device can be made to reach a stable state, so as to improve the overall performance of the device. For example, the heat treatment may include rapid annealing and the like.

[0058] According to the embodiments of the present disclosure, the irradiation treatment of the hafnium-based ferroelectric thin film may first determine the parameters of the irradiated ions, and the parameters of the irradiated ions include the type, energy, angle and ion injection rate of the irradiated ions.

[0059] According to the embodiments of the present disclosure, the irradiated ions need to penetrate the top electrode layer first when irradiating the hafnium-based ferroelectric film. The coercive electric field strength parameters of the hafnium-based ferroelectric film in the hafnium-based ferroelectric device can be dynamically regulated by adjusting the irradiation parameters of the particle beam. Since the irradiated ions need to pass through the top electrode layer before reaching the hafnium-based ferroelectric film, it is necessary to select irradiated ions with higher irradiation energy and relatively higher ion injection rate in order to achieve the goal of reducing the E of the hafnium-based ferroelectric film. cTechnical effect. According to the embodiments of the present disclosure, the hafnium-based ferroelectric film is treated with a particle beam to generate an ionizing radiation effect and a displacement radiation effect, so as to specifically regulate the arrangement order, charge characteristics and concentration of the intrinsic oxygen vacancies in the hafnium-based ferroelectric film, thereby accurately adjusting the coercive electric field strength parameters of the hafnium-based ferroelectric film, reducing the polarization reversal barrier of the hafnium-based ferroelectric film, improving the durability of the hafnium-based ferroelectric device, and thus improving the reliability of the hafnium-based ferroelectric device.

[0060] According to an embodiment of the present disclosure, the intermediate device is rapidly annealed to obtain a hafnium-based ferroelectric device, including: rapidly annealing the intermediate device, wherein the annealing time ranges from 10 s to 60 s and the heating temperature ranges from 300° C. to 700° C.

[0061] According to an embodiment of the present disclosure, a hafnium-based ferroelectric device is irradiated with a particle beam to adjust the coercive electric field strength parameters of the hafnium-based ferroelectric film in the hafnium-based ferroelectric device, thereby obtaining a target hafnium-based ferroelectric device with regulated performance, including: adjusting the charged state and oxygen vacancy concentration of intrinsic oxygen vacancies in the hafnium-based ferroelectric film by irradiating the hafnium-based ferroelectric device with a particle beam, thereby adjusting the coercive electric field strength parameters.

[0062] According to the embodiments of the present disclosure, the irradiation parameters of the particle beam irradiation can be set according to actual needs, so as to selectively adjust the charge state and oxygen vacancy concentration of the intrinsic oxygen vacancies in the hafnium-based ferroelectric film, thereby reducing the polarization reversal barrier of the hafnium-based ferroelectric film and adjusting the coercive electric field strength parameters.

[0063] According to the embodiments of the present disclosure, the concentration and charge characteristics of intrinsic oxygen vacancies are specifically regulated and the coercive electric field strength parameters of the hafnium-based ferroelectric film are precisely adjusted, thereby solving the technical problem in the related art that the performance of the hafnium-based ferroelectric film cannot be precisely regulated, further improving the durability of the hafnium-based ferroelectric device, and laying a solid foundation for the large-scale commercial application of hafnium-based ferroelectric thin film materials and devices.

[0064] According to an embodiment of the present disclosure, the particle beam is a neutron beam, a proton beam, a He 2+ Ion beam, electron beam and 60 Co A type of gamma ray.

[0065] According to the embodiment of the present disclosure, the irradiation energy range of the neutron beam is 1×10 -7 MeV~1×10 2 MeV; the irradiation energy range of the proton beam is 1×10 -1 keV ~1×50 MeV; the irradiation energy range of the electron beam is 1×10 -1 keV~10MeV; γ 60The ion dose of Co ray ranges from 1 Gy to 1×10 5 Gy; He 2+ The ion irradiation energy ranges from 10 keV to 1 MeV.

[0066] According to an embodiment of the present disclosure, the ion injection rate of the neutron beam is in the range of 1×10 5 n / cm 2 / s ~1×10 14 n / cm 2 / s; the ion injection rate range of the proton beam is 1×10 7 p / cm 2 / s~1×10 16 p / cm 2 / s; the ion injection rate of the electron beam ranges from 1×10 7 p / cm 2 / s ~1×10 16 p / cm 2 / s; 60 The Co γ-ray fluence rate range is 1×10 5 p / cm 2 / s~1×10 15 p / cm 2 / s;He 2+ The ion injection rate range is 1×10 8 ions / cm 2 / s ~1×10 15 ions / cm 2 / s.

[0067] According to an embodiment of the present disclosure, the irradiation angle range of the particle beam is 5°~90°.

[0068] According to an embodiment of the present disclosure, the beam size may be 5000 nm×400 nm.

[0069] According to the embodiments of the present disclosure, in order to verify the performance of the hafnium-based ferroelectric thin film prepared by the embodiments of the present disclosure, the performance of the hafnium-based ferroelectric thin film can be evaluated and optimized through macroscopic and microscopic control experiments.

[0070] For example, from the perspective of macroscopic electrical parameters, the E of hafnium-based ferroelectric thin film materials and devices can be precisely controlled in a targeted and selective manner. c, to improve the durability of the device. Conventional electrical means can be used to test the performance level of hafnium-based ferroelectric devices. For example, the test data can include current-voltage curves, capacitance-voltage characteristic curves, polarization intensity-voltage characteristic curves, etc., to verify performance indicators such as cycle durability. An irradiation group device irradiated by a particle beam and a control group device not irradiated by a particle beam can be set up, and the original electrical parameters and ferroelectric properties of the control group device can be obtained to compare the effect of the irradiation process on the E from the perspective of electrical performance. c The impact of.

[0071] For example, from the perspective of microstructure, new point defects can be created to increase the Vo concentration and stabilize the intermediate t-phase structure. The m-phase inside the hafnium-based thin film material tends to be transformed into the t-phase in order to reduce the polarization reversal barrier. A spherical aberration-corrected electron microscope can be used to observe the irradiated group devices and the control group devices at the microscopic atomic level, and the high-angle annular dark field (HAADF) technology can be used to calibrate the physical phase of the hafnium-based ferroelectric film. The electron energy loss spectroscopy (EELS) technology is used to observe the Vo concentration in the film, and the electron holography is used to observe the Vo charge in the film, so as to determine the directional and precise control of the internal microstructure of the hafnium-based thin film material by the irradiation process.

[0072] According to the embodiments of the present disclosure, based on the electrical test results and the microstructure analysis results, the influence of the irradiation parameters on the performance of the hafnium-based ferroelectric device is comprehensively judged. By establishing a relationship model between the irradiation process parameters and the performance, the irradiation process parameters for device performance regulation can be determined, thereby further optimizing the performance of the hafnium-based ferroelectric device.

[0073] In order to better understand the content of the present disclosure, the invention content of the present disclosure is described below through specific embodiments.

[0074] (1) Preparation of hafnium-based ferroelectric devices. The structure of hafnium-based ferroelectric devices is W / HZO / W. First, W is deposited as the bottom electrode on a low-doped Si substrate by magnetron sputtering. The process time is 10 min and the thickness of the bottom electrode is 50 nm ~100 nm. Then, a hafnium-based ferroelectric film is grown on the surface of the bottom electrode by atomic layer deposition with a thickness of 10 nm ~50 nm. Then, W is prepared as the top electrode, and the entire device is rapidly annealed at a temperature of 400 ℃ ~700 ℃ and a processing time of 10 s ~50 s. The prepared devices are marked as irradiation group and control group, respectively.

[0075] (2) Irradiation treatment. The irradiation group devices are exposed to irradiation conditions, and charged ions or uncharged particles are selected as the radiation source. In this embodiment, charged ion protons are used as the incident source, the incident energy is selected to be 1 MeV, the beam size is 5000 nm×400 nm, and the average injection amount is 4×10 9 p / cm 2 , the incident angle is 5°. For example, the incident angle can be determined according to the plane where the hafnium-based ferroelectric thin film is located and the incident direction of the particle beam.

[0076] (3) Analysis of irradiation effect. Compared with the control group, the E c The value is 1.61 MV / cm. After proton irradiation, the irradiated group device has E c The value decreased by 19% to 1.30 MV / cm. From the electron microscope microscopic analysis, it can be seen that after proton irradiation, the m phase inside the hafnium-based thin film material tends to transform into the t phase, which reduces the energy required to change the electrode polarization. From a microscopic perspective, it is proved that the irradiation effect leads to the E c This provides a new method to improve the durability of hafnium-based devices.

[0077] And, if Figure 3 As shown, in 1×10 11 Irradiation injection rate, 1×10 12 Irradiation injection rate, 1×10 13 Irradiation injection rate, 1×10 14 E of hafnium-based ferroelectric devices under irradiation fluence rate c Based on this, it can be seen that when the ion injection rate is higher, E c The lower the value, the more flexible the E of hafnium-based ferroelectric devices can be. c value, thereby achieving flexible regulation of the durability of hafnium-based ferroelectric devices.

[0078] According to the embodiments of the present disclosure, in order to better understand the preparation of the hafnium-based ferroelectric device and the device performance test process of the embodiments of the present disclosure, the following will be based on Figure 4 Provide an overall description.

[0079] Figure 4 The flowchart of the preparation and performance testing of the hafnium-based ferroelectric device according to the embodiment of the present disclosure is schematically shown.

[0080] like Figure 4As shown, a device structure design is performed on a hafnium-based ferroelectric device, and materials and devices are prepared for the hafnium-based ferroelectric device according to the structural design results. The prepared device is subjected to an irradiation process to obtain a target hafnium-based ferroelectric device. The hafnium-based ferroelectric device that has not been irradiated corresponds to a control group device, and the hafnium-based ferroelectric device after irradiation corresponds to an irradiation group device, wherein the irradiation treatment requires setting the irradiation ion type, irradiation ion injection rate, irradiation energy and irradiation angle.

[0081] According to the embodiments of the present disclosure, macroscopic and microscopic performance tests of control group devices and irradiated group devices can be performed using electrical tests and then microscopic observation and analysis, and irradiation parameters can be optimized based on the performance test results to obtain hafnium-based ferroelectric devices with better performance.

[0082] The flowcharts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each box in the flowchart or block diagram may represent a module, a program segment, or a part of a code, and the above-mentioned module, program segment, or a part of the code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box may also occur in an order different from that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flowchart, and the combination of boxes in the block diagram or flowchart, can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions. It can be understood by those skilled in the art that the features recorded in the various embodiments of the present disclosure can be combined and / or combined in a variety of ways, even if such a combination or combination is not explicitly recorded in the present disclosure. In particular, without departing from the spirit and teaching of the present disclosure, the features described in the various embodiments of the present disclosure may be combined and / or combined in a variety of ways. All of these combinations and / or combinations fall within the scope of the present disclosure.

[0083] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A hafnium-based ferroelectric device modified by irradiated particles, comprising: substrate layer; a bottom electrode layer located on the substrate layer; A hafnium-based ferroelectric thin film located on the bottom electrode layer, wherein a coercive electric field strength parameter of the hafnium-based ferroelectric thin film is improved by particle beam irradiation adjustment; and A top electrode layer is located on the hafnium-based ferroelectric thin film.

2. The hafnium-based ferroelectric device according to claim 1, wherein: The material of the hafnium-based ferroelectric thin film includes one of Zr-doped HfO2, La-doped HfO2, Al-doped HfO2, Si-doped HfO2 and Y-doped HfO2; and The target hafnium-based ferroelectric film has a thickness ranging from 5 nm to 50 nm.

3. The hafnium-based ferroelectric device according to claim 1, wherein: The material of the bottom electrode layer includes at least one of titanium nitride, tungsten, gold and ruthenium; The thickness of the bottom electrode layer is in the range of 30 nm to 100 nm; The material of the top electrode layer includes at least one of titanium nitride, tungsten, gold and ruthenium; The thickness of the top electrode layer is in the range of 20 nm to 40 nm; and The material of the substrate layer includes doped silicon.

4. A method for controlling the performance of a hafnium-based ferroelectric device, comprising: depositing a bottom electrode layer on the substrate layer; depositing a hafnium-based ferroelectric thin film on the bottom electrode layer; Depositing a top electrode layer on the hafnium-based ferroelectric thin film to obtain an intermediate device; as well as Performing rapid annealing on the intermediate device to obtain a hafnium-based ferroelectric device; The hafnium-based ferroelectric device is irradiated with a particle beam to adjust the coercive electric field intensity parameter of the hafnium-based ferroelectric film in the hafnium-based ferroelectric device, thereby obtaining a target hafnium-based ferroelectric device with adjusted performance.

5. The method according to claim 4, wherein: The method of irradiating the hafnium-based ferroelectric device with a particle beam to adjust the coercive electric field intensity parameter of the hafnium-based ferroelectric film in the hafnium-based ferroelectric device to obtain a target hafnium-based ferroelectric device with adjusted performance comprises: By irradiating the hafnium-based ferroelectric device with a particle beam, the charged state and oxygen vacancy concentration of the intrinsic oxygen vacancies in the hafnium-based ferroelectric film are adjusted, thereby adjusting the coercive electric field strength parameter.

6. The method according to claim 4, wherein: The irradiation particle beam includes neutron beam, proton beam, He 2+ Ion beam, electron beam and 60 Co A type of gamma ray.

7. The method according to claim 6, wherein: The irradiation energy range of the neutron beam is 1×10 -7 MeV~1×10 2 MeV; The irradiation energy range of the proton beam is 1×10 -1 keV ~1×50MeV; The irradiation energy range of the electron beam is 1×10 -1 keV~10 MeV; Said 60 The ion dose of Co γ-rays ranges from 1 Gy to 1×10 5 Gy; He 2+ The ion beam irradiation energy ranges from 10 keV to 1 MeV.

8. The method according to claim 6, wherein: The particle fluence rate of the neutron beam ranges from 1×10 5 n / cm 2 / s~1×10 14 n / cm 2 / s; The particle fluence rate of the proton beam ranges from 1×10 7 p / cm 2 / s~1×10 16 p / cm 2 / s; The particle fluence rate of the electron beam ranges from 1×10 7 p / cm 2 / s ~1×10 16 p / cm 2 / s; Said 60 The Co γ-ray fluence rate range is 1×10 5 p / cm 2 / s~1×10 15 p / cm 2 / s; He 2+ The particle fluence rate of the ion beam ranges from 1×10 8 ions / cm 2 / s ~1×10 15 ions / cm 2 / s.

9. The method according to claim 4, wherein: The irradiation angle of the particle beam ranges from 5° to 90°.

10. The method according to claim 4, wherein: The method of rapidly annealing the intermediate device to obtain a hafnium-based ferroelectric device comprises: The intermediate device is rapidly annealed, the annealing time ranges from 10 s to 60 s, and the heating temperature ranges from 300° C. to 700° C.

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