Film comprising curved structure and substrate carrier comprising same

By introducing a curved structure into the side wall of the membrane, it extends outward when the fluid flows into the chamber, covering the back contour area of ​​the substrate, the problem of contamination caused by slurry flow during the grinding process is solved, and the effect of effectively preventing contamination is achieved.

CN119871214APending Publication Date: 2025-04-25KC TECH CO LTD
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Patent Information

Application Number
CN202411479960.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-10-24
Filing Date
2024-10-23
Publication Date
2025-04-25

AI Technical Summary

Technical Problem

During the polishing of semiconductor components, substances such as slurry may flow into the space between the film and the retaining ring, causing contamination of the back contour area of ​​the substrate.

Method used

A film containing a curved structure is designed. When the side walls of the film flow into the chamber, the curved structure extends outward due to internal pressure, and the part of the side wall covers the back contour area of ​​the substrate to prevent material from flowing in.

Benefits of technology

Effectively prevent or reduce the flow of slurry and other substances into the space between the film and the retaining ring during the grinding process, thereby avoiding contamination of the back contour area of ​​the substrate.

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Abstract

In one embodiment, a substrate carrier may include: a carrier head; a film connected to the lower portion of the carrier head in order to sandwich the substrate; and a snap ring connected to the lower portion of the carrier head so as to surround the substrate sandwiched by the film from the outside, the film comprising: a base plate; a side wall extending upward from the outer contour of the bottom plate and including a curved structure formed at the lower portion thereof so as to be curved inward; and the first turning plate extends from the bottom plate and forms a first cavity together with the side wall.
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Description

Technical Field

[0001] The following embodiments relate to a film including a curved structure and a substrate carrier including the film. Background Art

[0002] When manufacturing semiconductor elements, CMP (chemical mechanical polishing) operations including grinding, polishing and cleaning are required. The semiconductor element is in the form of a multilayer structure, and a transistor element with a diffusion region is formed on the substrate layer. In the substrate layer, the connecting metal wires are patterned and electrically connected to the transistor element for forming the functional element. As is well known, the patterned conductive layer is insulated from other conductive layers with insulating materials such as silicon dioxide. As more metal layers and associated insulating layers are formed, the necessity of flattening the insulating material increases. If flattening is not achieved, further metal layer manufacturing becomes substantially more difficult due to many changes in the surface morphology. In addition, the metal line pattern is composed of insulating materials, and the metal CMP operation removes excess metal.

[0003] During the grinding process of the substrate, the substrate may be clamped under the bottom surface of the flexible film. On the other hand, during the grinding process, the outer contour area of ​​the back side (e.g., the opposite side of the grinding surface) of the substrate may be exposed to the space between the film and the retaining ring. In this case, the slurry and other substances supplied during the grinding process may flow into the space between the film and the retaining ring, thereby contaminating the outer contour area of ​​the back side (e.g., the opposite side of the grinding surface) of the substrate. Therefore, a film that can prevent this from happening and a substrate carrier including the film are needed.

[0004] The above background technologies are owned or mastered by the inventors in the process of deriving the disclosure content of this application, and are not necessarily known technologies disclosed to the general public before this application. Summary of the invention

[0005] An object of one embodiment is to provide a substrate carrier that can prevent or reduce the flow of slurry and other substances supplied during the grinding process into the space between the film and the retaining ring, thereby contaminating the outer contour area of ​​the back side (e.g., the opposite side of the grinding surface) of the substrate.

[0006] In one embodiment, the substrate carrier may include: a carrier head; a membrane, which is connected to the lower part of the carrier head for clamping the substrate; and a clamping ring, which is connected to the lower part of the carrier head so as to surround the substrate clamped by the membrane from the outside, and the membrane includes: a bottom plate; a side wall, which extends from the outer contour of the bottom plate toward the upper side and includes a curved structure bent toward the inner side at the lower part; and a first flap, which extends from the bottom plate and forms a first chamber together with the side wall.

[0007] In one embodiment, when the fluid flows into the first chamber, at least a portion of the curved structure may stretch toward the outside due to the internal pressure of the first chamber.

[0008] In one embodiment, when the first surface of the substrate is clamped by the film in a downward facing manner, when at least a portion of the curved structure extends outward, at least a portion of the side wall may cover the outer contour area of ​​the second surface opposite to the first surface of the substrate.

[0009] In one embodiment, the second surface may be a pattern surface of the substrate.

[0010] In one embodiment, the film may further include a cutout formed in a boundary area between the side wall and the bottom plate.

[0011] In one embodiment, the cutout may be formed in a form open toward the outside direction.

[0012] In one embodiment, the cutout cross-section may be formed in a triangular shape.

[0013] In one embodiment, when the fluid flows into the first chamber, at least a portion of the curved structure may stretch outward with the incision as the center due to the internal pressure of the first chamber.

[0014] In one embodiment, a membrane suitable for a substrate carrier may include: a bottom plate; a side wall extending from an outer contour of the bottom plate toward the upper side and including a curved structure bent toward the inner side at the lower part; and a first flap extending from the bottom plate and forming a first chamber together with the side wall.

[0015] In one embodiment, when the fluid flows into the first chamber, at least a portion of the curved structure may stretch toward the outside due to the internal pressure of the first chamber.

[0016] In one embodiment, the film may further include a cutout formed in a boundary area between the side wall and the bottom plate.

[0017] In one embodiment, the cutout may be formed in a form open toward the outside direction.

[0018] In one embodiment, the cutout cross-section may be formed in a triangular shape.

[0019] In one embodiment, when the fluid flows into the first chamber, at least a portion of the curved structure may stretch outward with the incision as the center due to the internal pressure of the first chamber.

[0020] According to a substrate carrier of one embodiment, due to the internal pressure of the chamber, the bending structure stretches outward, and at least a portion of the side wall is configured to cover the back side (for example, the opposite side of the grinding surface) of the substrate, thereby preventing or reducing the slurry and other substances supplied during the grinding process from flowing into the space between the film and the retaining ring, thereby contaminating the back side (for example, the opposite side of the grinding surface) of the substrate.

[0021] The effects of the substrate carrier according to one embodiment are not limited to the above-mentioned effects, and a person skilled in the art can clearly understand other effects not mentioned from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic perspective view of a substrate polishing apparatus according to an embodiment.

[0023] Figure 2 is a schematic cross-sectional view of a substrate carrier according to one embodiment.

[0024] Figure 3 is an enlarged view showing the vicinity of a side wall of an enlarged film in a substrate carrier according to one embodiment.

[0025] Figure 4 It is shown in Figure 3 An enlarged view of the state in which the bending structure stretches outward due to the internal pressure of the first chamber.

[0026] Description of symbols

[0027] 1: Substrate polishing device

[0028] 10: Substrate carrier

[0029] 20: Table

[0030] 11: Carrier Header

[0031] 12: Membrane

[0032] 13: Snap ring DETAILED DESCRIPTION

[0033] The following is a detailed description of the embodiments with reference to the accompanying drawings. However, since the embodiments can be modified in many ways, the scope of the patent application is not limited or restricted by these embodiments. Instead, it should be understood that all modifications, equivalents and even substitutes made to the embodiments are included in the scope of the rights.

[0034] The terms used in the embodiments are for illustrative purposes only and should not be interpreted as intended to be limiting. Singular expressions include plural expressions unless the context has a clearly different meaning. In this specification, terms such as "including" or "having" should be understood to specify the existence of the features, numbers, steps, operations, constituent elements, elements or combinations thereof recorded in the specification, and do not exclude the existence or additional possibility of one or more other features or numbers, steps, operations, constituent elements, elements or combinations thereof in advance.

[0035] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as those generally understood by a person having ordinary knowledge in the technical field to which the embodiments belong. Those terms defined in commonly used dictionaries should be interpreted as having the same meaning as that in the context of the relevant technology, and should not be interpreted as ideal or overly formal meanings unless clearly defined in this application.

[0036] In addition, when describing with reference to the accompanying drawings, the same components are given the same reference numerals regardless of the figure numbers, and their repeated descriptions are omitted. When describing the embodiments, when it is determined that the specific description of the relevant known technology may unnecessarily obscure the gist of the embodiments, its detailed description will be omitted.

[0037] In addition, when describing the constituent elements of the embodiments, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only used to distinguish the constituent element from other constituent elements, and the nature, sequence, steps, etc. of the relevant constituent elements are not limited by the terms. When a constituent element is described as being "connected", "combined" or "accessed" to other constituent elements, it should be understood that although the constituent element can be directly connected or accessed to other constituent elements, other constituent elements can also be "connected", "combined" or "accessed" between the constituent elements.

[0038] The constituent elements included in a certain embodiment and the constituent elements having common functions are described in other embodiments using the same names. Unless otherwise stated, the descriptions described in any one embodiment are applicable to other embodiments, and the specific descriptions are omitted within the scope of repetition.

[0039] Figure 1 is a schematic perspective view of a substrate polishing apparatus according to an embodiment.

[0040] Reference Figure 1 According to an embodiment, the substrate polishing device 1 may be a device for polishing a substrate W. For example, the substrate polishing device 1 may be used in a CMP (Chemical Mechanical Polishing) process of the substrate W.

[0041] In one embodiment, the substrate W may be a silicon wafer for manufacturing semiconductor devices. However, the type of the substrate W is not limited thereto. For example, the substrate W may also include glass for flat panel display devices (FPD) such as liquid crystal displays (LCD) and plasma display panels (PDP).

[0042] In one embodiment, the substrate polishing apparatus 1 may include a substrate carrier 10 and a platen 20 .

[0043] In one embodiment, the substrate carrier 10 can clamp the substrate W. The substrate carrier 10 can clamp and hold the polishing target substrate W, and move the clamped substrate W along the upper side direction of the polishing pad P. The substrate carrier 10 can make the substrate W transferred along the upper side direction of the polishing pad P contact with the polishing pad P, thereby performing polishing of the substrate W. The substrate carrier 10 pressurizes the substrate W in contact with the polishing pad P, so that the polishing degree of the substrate W can be adjusted by adjusting the friction between the substrate W and the polishing pad P.

[0044] In one embodiment, the substrate carrier 10 can adjust the position of the substrate W. The substrate carrier 10 can obtain power transmission from the outside and can rotate around an axis perpendicular to the surface of the polishing pad P. According to the rotation of the substrate carrier 10, the clamped substrate W can be polished while rotating in a state of contacting the polishing pad P.

[0045] In one embodiment, the substrate carrier 10 can move the substrate W horizontally. For example, the substrate carrier 10 can move in a first direction parallel to the surface of the polishing pad P and in a second direction perpendicular to the first direction. Through the combined movement in the first direction and the second direction, the substrate carrier 10 can move the substrate W on a plane parallel to the surface of the polishing pad P. As a result, according to the horizontal movement of the substrate carrier 10, the substrate W can be transferred to the polishing position or removed from the polishing position.

[0046] In one embodiment, the substrate carrier 10 can move the substrate W in the up-down direction relative to the ground. The substrate carrier 10 can move in the up-down direction relative to the substrate W support portion to chuck / unclatch the substrate W, or can move in the up-down direction relative to the polishing pad P to polish the substrate W.

[0047] In one embodiment, a polishing pad P may be installed on the platen 20. For example, the polishing pad P may be installed on the upper portion of the platen 20. The platen 20 may rotate around an axis while polishing the polishing surface of the substrate W in contact with the polishing pad P.

[0048] Figure 2 is a schematic cross-sectional view of a substrate carrier according to one embodiment, Figure 3 is an enlarged view showing the vicinity of the side wall of the enlarged film in a substrate carrier according to one embodiment, Figure 4 It is shown in Figure 3 In the state of the first chamber, the internal pressure of the first chamber causes the curved structure to stretch outward. Figure 2 It is shown schematically.

[0049] Reference Figures 2 to 4 In one embodiment, the substrate carrier 10 may include a carrier head 11 , a membrane 12 , and a retaining ring 13 .

[0050] In one embodiment, the carrier head 11 may form at least a portion of the appearance of the substrate carrier 10. Various accessories of the substrate carrier 10 may be connected and / or configured to the carrier head 11.

[0051] In one embodiment, the retaining ring 13 may be connected to the lower portion of the carrier head 11 so as to surround the substrate W clamped by the film 12 from the outside. The retaining ring 13 may prevent the substrate W from being disengaged from the clamped position. For example, the retaining ring 13 may support the side of the substrate to prevent the substrate W from being disengaged from the substrate carrier 10 due to vibration and / or friction occurring during the grinding process of the substrate.

[0052] In one embodiment, the membrane 12 may be connected to the lower portion of the carrier head 11. The membrane 12 may be a structure for clamping the substrate W. The membrane 12 may be formed of an elastically deformable material. The membrane 12 may include a bottom plate 121, a side wall 122, a plurality of flaps 123, a plurality of chambers 124, and a cutout 125. The bottom plate 121 may be a portion that directly contacts the substrate. The bottom plate 121 may be formed to a size substantially corresponding to the substrate W.

[0053] In one embodiment, the side wall 122 may extend from the outer profile of the bottom plate 121 in the upper direction. A first fixed flap 1221 and a second fixed flap 1222 may be formed on the side wall 122. For example, the first fixed flap 1221 may extend in the upper direction, and the second fixed flap 1222 may extend in the horizontal direction. For example, the first fixed flap 1221 may include a curved structure so that it can be retracted in the vertical direction. The ends of the first fixed flap 1221 and / or the second fixed flap 1222 may be fixedly connected to the carrier head 11. A chamber 124 may also be formed in the space between the first fixed flap 1221 and the second fixed flap 1222.

[0054] In one embodiment, the side wall 122 may include a curved structure 1223. The curved structure 1223 may be formed by bending inwardly at the lower portion of the side wall 122. For example, when the curved structure 1223 is formed from the lower portion of the side wall 122 toward the upper portion, it is first bent inwardly (e.g., -X direction) and then bent inwardly (e.g., +X direction). However, this is exemplary, and the shape of the side wall 122 is not limited thereto.

[0055] In one embodiment, a plurality of flaps 123 may extend from the base plate 121. The plurality of flaps 123 may include a curved structure so as to be retractable. The ends of the plurality of flaps 123 may be fixedly connected to the carrier head 11. A plurality of chambers 124 may be formed as a space divided by a plurality of flaps 123 and a sidewall 122. For example, each chamber 124 may be formed between adjacent plurality of flaps 123 and / or sidewalls 122. Fluid (e.g., air) may be supplied to the plurality of chambers 124. The pressure inside each chamber 124 may be controlled individually. By controlling the pressure inside each chamber 124, the degree to which the substrate pressurizes the polishing pad during polishing may be adjusted. According to the structure as described above, the polishing profile of the corresponding substrate portion may be controlled by controlling the internal pressure of each chamber 124. However, the shape, size, and / or number of the sidewalls 122, flaps 123, and / or chambers 124 shown in the figure are exemplary and are not limited thereto. On the other hand, for the sake of convenience, the flap 123 adjacent to the side wall 122 is referred to as a first flap 123a, and the chamber 124 defined by the side wall 122 and the first flap 123a is referred to as a first chamber 124a. In other words, the first flap 123a and the side wall 122 may form the first chamber 124a.

[0056] In one embodiment, the cutout 125 may cut the boundary area formed in the side wall 122 and the bottom plate 121. For example, the cutout 125 may be formed in the lower end portion of the side wall 122. The cutout 125 may be formed to be open toward the outer side. For example, the cross section of the cutout 125 may actually be formed in a triangular shape. However, this is exemplary, and the shape, position and / or number of the cutout 125 are not limited thereto.

[0057] In one embodiment, when a fluid (e.g., air) flows into the first chamber 124a, the internal pressure of the first chamber 124a increases. When the internal pressure of the first chamber 124a increases to a certain pressure or more, at least a portion of the curved structure 1223 may stretch outward due to the internal pressure of the first chamber 124a. For example, at least a portion of the curved structure 1223 may stretch outward with the cutout 125 as the center due to the internal pressure of the first chamber 124a. According to the above-described structure, the cutout 125 at the lower end of the side wall 122 may be folded while the curved structure 1223 may be folded based on the cutout 125. Figure 3The side wall 122 rotates and stretches in the clockwise direction, so that at least a portion of the side wall 122 (for example, the lower end portion of the side wall 122) can cover the outer contour area of ​​the back side (for example, the opposite side of the grinding surface) of the substrate W clamped by the film 12. In other words, in a state where at least a portion of the curved structure 1223 stretches outward, at least a portion of the side wall 122 can cover the outer contour area of ​​the back side (for example, the opposite side of the grinding surface) of the substrate W clamped by the film 12. Therefore, when the fluid is supplied to the first chamber 124a during the grinding process, at least a portion of the side wall 122 is deformed to cover the outer contour area of ​​the back side (for example, the opposite side of the grinding surface) of the substrate W clamped by the film 12, thereby preventing or reducing the contamination of the outer contour area of ​​the back side (for example, the opposite side of the grinding surface) of the substrate W by foreign matter (for example, slurry or grinding particles) during the grinding process. For example, when the substrate W is clamped by the film 12 in a form in which the first surface S1 of the substrate W faces the lower side, at least a portion of the side wall 122 may cover the outer contour area of ​​the second surface S2 opposite to the first surface S1 of the substrate W when at least a portion of the curved structure 1223 is extended in the outward direction. For example, the second surface S2 may be a pattern surface on which a pattern of the substrate W is formed, and the first surface S1 may be a surface on which no pattern is formed. According to the structure as described above, during the process of grinding the first surface S1 of the substrate W (for example, a non-pattern surface), the second surface S2 of the substrate W (for example, a pattern surface) may be prevented or reduced from being contaminated. However, this is exemplary, and the first surface S1 may also be a pattern surface on which a pattern of the substrate W is formed, and the second surface S2 may also be a surface on which no pattern is formed.

[0058] As described above, although the embodiments are described with the aid of limited figures, a person with general knowledge in the corresponding technical field can make various technical modifications and variations based on the above. For example, even if the described techniques are performed in a different order from the described method, and / or the described system, structure, device, circuit and other components are combined or combined in a different form from the described method, or replaced or substituted by other components or equivalents, appropriate results can be achieved.

[0059] Therefore, other implementations, other embodiments, and equivalents to the patent claims are also within the scope of the claims.

Claims

1. A substrate carrier, characterized in that: include: Carrier head; A membrane connected to the lower portion of the carrier head in order to clamp the substrate; as well as A clamping ring is connected to the lower part of the carrier head so as to surround the substrate clamped by the film from the outside, The membrane includes: Base plate; A side wall extending upward from the outer contour of the bottom plate and including a curved structure at the lower portion thereof that is curved inward; and The first flap is extended from the bottom plate and forms a first chamber together with the side wall.

2. The substrate carrier according to claim 1, characterized in that When the fluid flows into the first chamber, at least a portion of the curved structure stretches toward the outside due to the internal pressure of the first chamber.

3. The substrate carrier according to claim 2, characterized in that: When the first surface of the substrate is clamped by the film in a downwardly oriented manner, at least a portion of the side wall covers an outer contour area of ​​a second surface opposite to the first surface of the substrate while at least a portion of the curved structure extends outward.

4. The substrate carrier according to claim 3, characterized in that: The second surface is the pattern surface of the substrate.

5. The substrate carrier according to claim 1, characterized in that The film further includes a cutout formed in the boundary area between the side wall and the bottom plate.

6. The substrate carrier according to claim 5, characterized in that The incision is formed in a form open toward the outside.

7. The substrate carrier according to claim 6, characterized in that: The cutout is formed into a triangular cross section.

8. The substrate carrier according to claim 6, characterized in that When the fluid flows into the first chamber, due to the internal pressure of the first chamber, at least a portion of the curved structure stretches outward with the incision as the center.

9. A film, as a film suitable for a substrate carrier, characterized in that: include: Base plate; A side wall extending upward from the outer contour of the bottom plate and including a curved structure bent inward at the lower portion; as well as The first flap is extended from the bottom plate and forms a first chamber together with the side wall.

10. The membrane according to claim 9, characterized in that When the fluid flows into the first chamber, at least a portion of the curved structure stretches toward the outside due to the internal pressure of the first chamber.

11. The film according to claim 9, characterized in that The film further includes a cutout formed in the boundary area between the side wall and the bottom plate.

12. The membrane according to claim 11, characterized in that The incision is formed in a form open toward the outside.

13. The membrane according to claim 12, characterized in that The cutout is formed into a triangular cross section.

14. The film according to claim 12, characterized in that When the fluid flows into the first chamber, due to the internal pressure of the first chamber, at least a portion of the curved structure stretches outward with the incision as the center.