Spherical substrate diamond film suspension growth device

Abstract

The present invention discloses a spherical substrate diamond film suspension growth device, comprising a cavity for providing a reaction environment and a deposition base for supporting the spherical substrate; the cavity is provided with an air inlet and an air outlet, the air inlet is for reactant gas to enter, the air outlet is for exhaust gas in the cavity to be discharged, and the air inlet is communicated with the air outlet; the deposition base is arranged in the cavity and adapted to the air flow channel, and an air flow suspension component and / or an electromagnetic suspension component are provided on the deposition base, the air flow suspension component and / or the electromagnetic suspension component suspend the spherical substrate above the deposition base and place the spherical substrate in the reaction environment.

Description

Technical Field

[0001] The invention belongs to the technical field of microwave plasma chemical vapor deposition, and in particular relates to a spherical substrate diamond film suspension growth device. Background Art

[0002] Diamond films, due to their excellent mechanical properties, thermal conductivity, chemical stability, and optical characteristics, have been widely used in machining, electronic devices, optical materials, and other fields. Chemical vapor deposition (CVD), particularly microwave plasma chemical vapor deposition (MPCVD), is a key method for producing high-quality diamond films. Traditional MPCVD equipment is primarily designed for planar substrates, and significant progress has been made in achieving deposition uniformity and grain orientation control. However, existing equipment and processes for growing diamond films on spherical or curved substrates face technical bottlenecks.

[0003] Depositing diamond films on spherical substrates offers unique advantages, such as spherical lenses and high-strength spherical devices used in optics. However, due to the geometric characteristics of the spherical substrate, the non-uniformity of plasma distribution, and the complexity of substrate rotation control, the temperature distribution and chemical reaction conditions on the surface of the spherical substrate are difficult to precisely control, resulting in uneven distribution of film thickness and mass. In addition, spherical substrates typically require high-precision support and motion control during the deposition process, but traditional fixed support methods are prone to mechanical interference or affect the deposition area, limiting the high-quality preparation of spherical diamond films.

[0004] Previous studies have attempted to improve deposition uniformity on spherical substrates by rotating the substrate or changing the plasma shape, but these methods often require complex mechanical transmission systems, making it difficult to ensure system stability and accuracy. Furthermore, mechanical contact support methods are prone to introducing impurities or causing damage to the substrate surface in high-temperature environments, further affecting film quality. Therefore, developing a non-contact, controllable, and high-precision spherical substrate support and rotation system is key to solving the technical challenges of growing diamond films on spherical substrates using MPCVD. Summary of the Invention

[0005] Based on the above background, this application proposes a spherical substrate diamond film suspension growth device, which aims to achieve non-contact support and high-precision rotation of the spherical substrate through gas and / or electromagnetic suspension and spin control technology, and solve the technical bottlenecks of uniformity and high-quality film preparation during the spherical substrate deposition process.

[0006] The technical solution includes: a spherical substrate diamond film suspension growth device, including a cavity for providing a reaction environment and a deposition base for supporting the spherical substrate; the cavity is provided with an air inlet and an air outlet, the air inlet is for reactant gas to enter, and the air outlet is for exhaust gas in the cavity to be discharged, and the air inlet is connected to the air outlet; the deposition base is arranged in the cavity and adapted to the air flow channel, and an air flow suspension component and / or an electromagnetic suspension component are provided on the deposition base, and the air flow suspension component and / or the electromagnetic suspension component suspend the spherical substrate above the deposition base and place the spherical substrate in the reaction environment.

[0007] Preferably, an air flow suspension component is provided on the deposition base, and the air flow suspension component is provided with a plurality of air flow nozzles. The plurality of air flow nozzles spray gas between the deposition base and the spherical substrate to form an air flow support layer, suspending the spherical substrate above the deposition base and placing the spherical substrate in the reaction environment.

[0008] Preferably, an electromagnetic suspension component is provided on the deposition base, and the electromagnetic suspension component is provided with an electromagnetic coil. The electromagnetic coil forms a magnetic field between the deposition base and the spherical substrate and suspends the spherical substrate above the deposition base through the magnetic field and places the spherical substrate into the reaction environment.

[0009] Preferably, an airflow suspension component and an electromagnetic suspension component are provided on the deposition base, the airflow suspension component is provided with a plurality of airflow nozzles, and the plurality of airflow nozzles spray gas between the deposition base and the spherical base to form an airflow support layer; the electromagnetic suspension component is provided with an electromagnetic coil, and the electromagnetic coil forms a magnetic field between the deposition base and the spherical base; the airflow support layer cooperates with the magnetic field to suspend the spherical base above the deposition base and place the spherical base in the reaction environment.

[0010] Preferably, the transverse cross-section of the cavity is circular, the air inlet is arranged at the top of the cavity, and there are multiple air outlets that are equidistantly distributed with the center of the bottom surface of the cavity as the center.

[0011] Preferably, the cavity includes a first chamber at the top and a second chamber at the bottom, the air inlet is arranged at the center of the top of the first chamber, the deposition base is arranged in the second chamber, the first chamber and the second chamber are connected to form an integrated space, and the diameter of the first chamber is smaller than the diameter of the second chamber, and there are multiple air outlets and they are equidistantly distributed with the center of the bottom surface of the second chamber as the center.

[0012] Preferably, it is characterized in that a base and an air supply pipe connected to the base are provided under the deposition base, a conduit is provided at the lower part of the cavity, the air supply pipe is passed through the conduit, and the space between the outer wall of the air supply pipe and the inner wall of the conduit constitutes a waveguide channel, and the waveguide channel is used to transmit the microwave energy emitted by the microwave source into the cavity.

[0013] Preferably, a temperature sensor is further provided on the deposition base, and the temperature sensor is used to detect the temperature of the spherical substrate.

[0014] Preferably, the airflow suspension component also includes an air inlet channel arranged in the air supply pipe and an airflow regulating mechanism arranged in the base. The air inlet channel is connected to the multiple airflow nozzles through the airflow regulating mechanism. The airflow regulating mechanism controls the multiple airflow nozzles to spray air to suspend the spherical base, and controls the jet velocity difference of the outermost 1-3 layers of airflow nozzles to provide power for the suspension and spin of the spherical base.

[0015] Preferably, the deposition base includes an inner base, which is in the shape of an inner concave sphere, and the center position of the sphere is adapted to the spherical base; the inner base is provided with at least 30 air flow nozzles, and the air flow nozzles are regularly distributed with the center of the inner base as the center of the circle, the diameter of the air flow nozzles is 3 to 5 mm, and the nozzle spacing is 2 to 3 mm.

[0016] Preferably, the air flow nozzle is inclined toward the center of the spherical base, and the inclination angle is 0°-30°.

[0017] Preferably, a temperature control component is provided under the deposition base, the temperature control component is mounted on the outside of the base and connected to a temperature sensor, and the temperature control component is used to adjust the temperature of the airflow ejected from the airflow nozzle and thus adjust the reaction environment temperature.

[0018] Preferably, the base and the bottom surface of the cavity are provided with quartz waveguide windows, and the quartz waveguide windows isolate the waveguide channel from the space inside the cavity to prevent the cavity airflow or impurities from entering the waveguide channel.

[0019] The present application uses an airflow suspension component and / or an electromagnetic suspension component to suspend the spherical substrate above the deposition base and places the spherical substrate in a reaction environment. By controlling the airflow and / or magnetic field changes, the spherical substrate is driven to spin, thereby achieving non-contact support and high-precision rotation of the spherical substrate, thereby achieving uniformity and high-quality thin film preparation during the spherical substrate deposition process. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a vertical schematic diagram of the device structure provided by an embodiment of the present invention;

[0021] Figure 2 is an enlarged schematic diagram of a gas nozzle provided in an embodiment of the present invention;

[0022] Figure 3 Schematic diagram of airflow-controlled spherical substrate suspension and spin according to an embodiment of the present invention;

[0023] Figure 4 is a schematic diagram of an electromagnetic suspension assembly provided by an embodiment of the present invention;

[0024] Figure 5 is the electron density distribution result after simulation of the device provided by the embodiment of the present invention;

[0025] Figure 6 is the H atom number distribution result after simulation of the device provided by the embodiment of the present invention;

[0026] Figure 7 is the temperature distribution result after simulation of the device provided by the embodiment of the present invention;

[0027] Figure 8 This is a process flow chart of the method for growing diamond films on spherical substrates provided by the present invention. DETAILED DESCRIPTION

[0028] The following will clearly and completely describe the technical solution of this application in conjunction with the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of this application.

[0029] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate the description of this application and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0030] In the description of this application, it should be noted that, unless otherwise specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0031] The present invention will be described in further detail below with reference to the accompanying drawings.

[0032] Reference Figure 1 The present invention discloses a spherical substrate diamond film suspension growth device, comprising a chamber 100 for providing a reaction environment and a deposition base 200 for supporting a spherical substrate 500; Figure 1 As shown, the chamber is provided with an air inlet 101 and an air outlet 102, the air inlet is for the reaction gas to enter, and the air outlet is for the exhaust gas in the chamber to be discharged, and the air inlet is connected to the air outlet; the deposition base is arranged in the chamber and adapted to the air flow channel, and the deposition base is provided with an air flow suspension component and / or an electromagnetic suspension component, and the air flow suspension component and / or the electromagnetic suspension component suspend the spherical substrate above the deposition base and place the spherical substrate in the reaction environment. In this embodiment, the spherical substrate is suspended above the deposition base by the air flow suspension component and / or the electromagnetic suspension component and placed in the reaction environment. By controlling the air flow and / or magnetic field changes to drive the spherical substrate to spin, non-contact support and high-precision rotation of the spherical substrate are achieved, thereby achieving uniformity and high-quality thin film preparation during the spherical substrate deposition process. In this embodiment, the cavity is made of one or more of high-temperature resistant metals, such as 304 stainless steel, 316L stainless steel, high-temperature alloy (Hastelloy C-276) or ceramic materials such as alumina (Al2O3) and silicon nitride (Si3N4). It can operate stably for a long time under high temperature and high pressure environments and ensure the stability of the atmosphere, thereby providing ideal conditions for thin film growth.

[0033] Based on the above embodiment, further referring to Figure 1 or Figure 3 In the present application, when the suspension and the spin of the spherical substrate are achieved through airflow, an airflow suspension component is provided on the deposition base, and the airflow suspension component is provided with a plurality of airflow nozzles 201. The plurality of airflow nozzles spray gas between the deposition base and the spherical substrate to form an airflow support layer, suspending the spherical substrate above the deposition base and placing the spherical substrate in the reaction environment. In this embodiment, the airflow nozzles are generally arranged below the spherical substrate and the airflow nozzles are regularly distributed by means of airflow suspension. Figure 2 In the embodiment, a plurality of air flow nozzles 201 are provided on the deposition base 200 inside the chamber 100 to form an air flow support grid surrounding the spherical substrate. Figure 2 The arrangement and layout of these airflow nozzles are shown. The airflow nozzles are densely arranged in an array and arranged in a certain curvature around the lower part of the spherical base, such as Figure 2As shown, the plurality of airflow nozzles are first arranged according to a cross line, dividing the deposition base space into four sector-shaped areas, and the number of airflow nozzles in each sector-shaped area gradually increases. Figure 3 As shown, the deflected airflow 202 ejected from the airflow nozzle on one side is slightly stronger than that on the other side, forming a lateral airflow 501 above the spherical substrate 500. Driven by the lateral airflow, the spherical substrate undergoes spin deflection. In addition, the airflow nozzles corresponding to different deflection directions need to be controlled to eject the deflected airflow to achieve full coverage and uniform growth of the spherical substrate. In this embodiment, the gas ejected from the airflow nozzles can preferably be an inert gas such as argon (Ar), nitrogen (N2), or helium (He) that does not affect the chemical reaction during the deposition process, and mainly serves to support the airflow and suspend the substrate.

[0034] On the basis of one or more of the above embodiments, further referring to Figure 4 In the present application, when suspension and spherical substrate spinning are achieved through a magnetic field, an electromagnetic suspension component 600 is provided on the deposition base. The electromagnetic suspension component is provided with an electromagnetic coil 601. The electromagnetic coil forms a magnetic field between the deposition base and the spherical substrate and suspends the spherical substrate above the deposition base through the magnetic field and places the spherical substrate in the reaction environment. The electromagnetic suspension support device generates a stable magnetic field by arranging the electromagnetic coil 601 to act on the spherical substrate, suspending it in the reaction gas. The intensity and direction of the electromagnetic field are adjusted in real time by the electromagnetic control system, thereby precisely controlling the suspension and spinning state of the substrate.

[0035] Based on one or more of the above embodiments, further, in the present application, when achieving levitation and spin of a spherical substrate through the coordination of airflow and magnetic field, the deposition base is provided with an airflow suspension component and an electromagnetic suspension component. The airflow suspension component is provided with multiple airflow nozzles, which eject gas between the deposition base and the spherical substrate to form an airflow support layer; the electromagnetic suspension component is provided with an electromagnetic coil, which forms a magnetic field between the deposition base and the spherical substrate; the airflow support layer cooperates with the magnetic field to suspend the spherical substrate above the deposition base and place the spherical substrate in the reaction environment. In this embodiment, the coordination of the magnetic field and airflow can achieve more precise and sensitive levitation and spin control. For example, the spherical substrate can be levitationed by airflow, and the spin angle and speed of the spherical substrate can be adjusted by controlling the magnetic field strength, making the magnetic field control more sensitive and precise. Alternatively, the spherical substrate can be levitationed by the magnetic field, and the spin of the spherical substrate can be controlled by airflow. Alternatively, the magnetic field and airflow can cooperate to achieve levitation, resulting in a more stable levitation.

[0036] On the basis of one or more of the above embodiments, further referring to Figure 1The chamber has a circular cross-section, the gas inlet is located at the top of the chamber, and multiple gas outlets are equidistantly distributed about the center of the chamber bottom. In this embodiment, the reactant gas enters the reaction environment downward from the gas inlet and is then dispersed and discharged, thereby improving the uniformity of the reactant gas flow within the reaction environment.

[0037] On the basis of one or more of the above embodiments, further, combined with Figure 1 The chamber comprises an upper first chamber and a lower second chamber. The air inlet is located at the center of the top of the first chamber, and the deposition base is located within the second chamber. The first and second chambers are connected to form a single space, and the diameter of the first chamber is smaller than that of the second chamber. Multiple air outlets are provided and equidistantly distributed around the center of the bottom of the second chamber. In this embodiment, the space within the chamber is divided into the upper first chamber for air intake and the lower second chamber for reaction. The first chamber stabilizes the airflow, while the second chamber allows the airflow to diffuse and reach the deposition base. The structure of the first and second chambers further ensures airflow stability and ensures that the airflow fully passes through the spherical substrate.

[0038] On the basis of one or more of the above embodiments, further, combined with Figure 1 and Figure 3 、 Figure 4 A base and a gas supply pipe 400 connected to the base are provided under the deposition base. A conduit is provided at the lower part of the cavity. The gas supply pipe is passed through the conduit. The space between the outer wall of the gas supply pipe and the inner wall of the conduit constitutes a waveguide channel 104. The waveguide channel is used to transmit the microwave energy emitted by the microwave source into the cavity.

[0039] In addition to one or more of the above embodiments, the deposition base is further provided with a temperature sensor 301 for detecting the temperature of the spherical substrate. In this embodiment, to ensure the stability of the deposition base, the temperature of the deposition base is further sensed by the temperature sensor. The temperature sensor of this embodiment is preferably located at the center of the airflow nozzle, i.e., the center of the deposition base, to more promptly sense the airflow temperature and the temperature of the spherical substrate.

[0040] In one or more of the above embodiments, the airflow suspension assembly further includes an air inlet channel disposed within the air supply conduit and an airflow regulating mechanism disposed within the base. The air inlet channel is connected to the multiple airflow nozzles via the airflow regulating mechanism. The airflow regulating mechanism controls the airflow ejected from the multiple airflow nozzles to suspend the spherical substrate, and controls the jet velocity difference of the outermost 1-3 layers of airflow nozzles to provide power for the spherical substrate to suspend and spin. This embodiment is used to precisely regulate the airflow velocity and direction within the chamber to ensure stable suspension and proper spin of the spherical substrate during the deposition process. The airflow regulating mechanism controls the airflow distribution pattern by adjusting the airflow pressure and direction of the nozzles, ensuring uniform airflow support for the substrate. To prevent excessive air pressure from a single airflow nozzle from disrupting the overall airflow, or excessive flow from a single airflow nozzle from causing unstable spin control, the present application utilizes 1-3 layers of airflow nozzles for spin regulation to coordinate the spherical substrate's spin, thereby improving spin stability.

[0041] On the basis of one or more of the above embodiments, further, combined with Figure 2 and Figure 3 The deposition base includes an inner base, which is in the shape of an inner concave sphere, and the center position of the sphere is adapted to the spherical base; the inner base is provided with at least 30 airflow nozzles, which are regularly distributed with the center of the inner base as the center of the circle, and the diameter of the airflow nozzles is 3 to 5 mm, and the nozzle spacing is 2 to 3 mm. Based on one or more of the above embodiments, further, combined with Figure 2 and Figure 3 The airflow nozzles are tilted toward the center of the spherical substrate at an angle of 0°-30°. In the above embodiment, the number and distribution of the airflow nozzles are designed to provide a stable and uniform airflow distribution. This allows for the control of slight deviations in the direction of the airflow nozzles or variations in airflow velocity between nozzles, thereby generating a slight rotational torque and causing the spherical substrate to spin.

[0042] On the basis of one or more of the above embodiments, further referring to Figure 1 、 Figure 4 A temperature control assembly 300 is provided below the deposition base. The temperature control assembly is mounted on the outside of the base and connected to a temperature sensor. The temperature control assembly is used to adjust the temperature of the airflow ejected from the airflow nozzle and thus adjust the temperature of the reaction environment. By real-time monitoring the feedback of the temperature sensor, the temperature of the airflow output from the nozzle is regulated in real time, thereby achieving fine temperature control during the growth of the diamond film and avoiding drastic fluctuations in the substrate surface temperature. This precise temperature regulation can improve the quality of the film, thereby ensuring the density and uniformity of the film. In this embodiment, the temperature regulation assembly adjusts the surface temperature of the spherical substrate to 700~1000℃.

[0043] On the basis of one or more of the above embodiments, further, combined with Figure 1 、 Figure 4 A quartz waveguide window is provided on the base and the bottom surface of the cavity. The quartz waveguide window 103 isolates the waveguide channel from the space inside the cavity to prevent the cavity airflow or impurities from entering the waveguide channel.

[0044] In the present invention, reference is made to Figure 1-4 And the structure of one or more of the above embodiments, when an airflow suspension component is used, the cavity, i.e., the MPCVD cavity 100, adopts a hollow cylindrical or stepped hollow cylindrical design, which is mainly used to provide a stable reaction environment and accommodate the reaction gases required in the thin film growth process. A microwave feeding system is provided at the lower part of the cavity 100, which is connected to the microwave source through a waveguide 104 to excite the reaction gas (such as methane CH4 and hydrogen H2). The air inlet 101 of the cavity 100 is located at the top and is responsible for introducing the reaction gas, while the air outlet 102 is located at the bottom and is used to discharge the exhaust gas. A quartz waveguide window 103 is also provided inside the cavity to play a role in microwave transmission and sealing protection. The gas suspension component forms an airflow support grid surrounding the spherical base by arranging a plurality of airflow nozzles 201 on the deposition base 200 inside the MPCVD cavity 100. Figure 2 The arrangement and layout of these airflow nozzles are shown, densely arranged in an array and arranged with a certain curvature around the lower portion of the spherical substrate. The airflow suspension assembly also includes an air inlet channel provided within the air supply pipeline and an airflow regulation mechanism provided within the base. Located within the deposition base 200, the airflow regulation mechanism is responsible for precisely adjusting the speed and direction of the supporting airflow to ensure stable suspension and slight spin of the substrate during deposition. Figure 3 The diagram in the figure clearly shows how the airflow suspension component precisely adjusts the airflow from the nozzle to form a uniform airflow field, thereby maintaining the substrate's levitation and spin. The tiny torque of the spherical substrate's spin comes from slight deviations in the airflow velocity.

[0045] The temperature control component mounted on the outside of the base monitors the feedback of the temperature sensor 301 in real time, and then adjusts the air flow temperature of the air flow adjustment mechanism to control the surface temperature of the spherical base 500.

[0046] like Figure 4 As shown, the present invention provides another embodiment based on electromagnetic levitation. In this embodiment, the electromagnetic levitation assembly comprises an electromagnetic base 600, within which an electromagnetic coil 601 is located. By arranging the electromagnetic coil 601, the electromagnetic levitation assembly generates a stable magnetic field that acts on the spherical substrate, suspending it in the airflow. The intensity and direction of the electromagnetic field are adjusted in real time by an electromagnetic control system, thereby precisely controlling the substrate's suspension and spin state.

[0047] The primary diamond film growth process of the present invention includes:

[0048] S1: Substrate Loading. During this process, the spherical substrate 500 is mounted on the deposition base 200, ensuring that the airflow nozzle system is installed according to the optimized plan. The number, angle, and arrangement of the airflow nozzles 201 ensure that the airflow evenly covers the substrate, causing it to levitate and spin.

[0049] S2: Introducing reaction gases. Reaction gases, commonly used gases, include methane (CH4) and hydrogen (H2), are introduced through the gas inlet 101 at the top of the chamber. The gas flow rate and ratio are adjusted according to the actual process requirements to ensure an atmosphere suitable for diamond film growth.

[0050] S3: Activate the microwave source. The microwave source is activated and transmits microwave energy to the cavity through the waveguide channel 104, stimulating gas decomposition to generate carbon sources (such as CH groups from the decomposition of methane). The microwave energy is kept stable to ensure the continuity of gas decomposition.

[0051] According to the first embodiment provided by the present invention, the following steps are performed:

[0052] S41: Airflow Control and Substrate Suspension: The airflow adjustment mechanism is activated to adjust the airflow pressure and direction of each nozzle 201 so that the spherical substrate is suspended under the support of the airflow and maintains a slight spinning state.

[0053] S51: Temperature Control. The temperature control component is activated to adjust the airflow temperature based on real-time feedback from the temperature sensor 301 to maintain the substrate surface within the ideal deposition temperature range. Precise temperature control helps improve the quality of the diamond film.

[0054] In addition, when the present application adopts the electromagnetic suspension method, the thin film growth process of the spherical substrate of the present application is different from the airflow suspension method mainly in the suspension process, which replaces the airflow suspension with electromagnetic suspension. The steps are as follows:

[0055] S42: Electromagnetic Control of Levitation and Spin. The electromagnetic control system is activated, generating a stable magnetic field through the electromagnetic coil 601 arranged within the electromagnetic base 600. This exerts an electromagnetic force on the spherical substrate, causing it to suspend in the airflow. The intensity and direction of this electromagnetic field can be adjusted in real time by the control system to ensure stable levitation of the substrate during the deposition process. The substrate's spin can also be controlled by fine-tuning the electromagnetic field parameters.

[0056] According to the two embodiments provided by the present invention, the following steps are the same, specifically as follows:

[0057] S6: Film Growth. Under stable atmosphere, temperature, and airflow conditions, the diamond film begins to deposit. The carbon source in the reaction gas reacts with the hydrogen to form the diamond film.

[0058] S7: Deposition termination and cooling. When the diamond film reaches the desired thickness, the reaction gas supply is gradually stopped, the microwave power is reduced, and the temperature in the chamber is gradually lowered. The cooling process should be carried out slowly to avoid thermal stress that may cause cracks in the substrate or film.

[0059] In practice, if one wants to further obtain higher quality diamond films, the above two methods can also be designed in combination, that is, the film can be grown by combining airflow suspension and electromagnetic suspension, and the growth steps refer to the relevant steps of airflow suspension and electromagnetic suspension.

[0060] In addition, please see the attached Figure 5 、 6 、7. Figure 5 It reflects the distribution of electron density in the cavity and reveals the dissociation and ionization of the gas after microwave excitation; Figure 6 The distribution of the number of hydrogen atoms on the upper portion of the deposition substrate 200 is shown; Figure 7 The temperature distribution within the MPCVD chamber 100 is shown. These finite element simulation results demonstrate that the device achieves a concentrated, stepped distribution of electron density above the deposition substrate 200, effectively stimulating the reactant gases. The concentrated, stepped distribution of hydrogen atoms above the deposition substrate 200 ensures a highly efficient growth process. Furthermore, the temperature simulation results ensure the reasonableness of the surface temperature at the spherical substrate. These simulation results fully demonstrate the superior performance and reliability of this device in diamond film growth.

[0061] This invention primarily targets the growth of diamond films on spherical or other curved substrates, and is particularly suitable for applications requiring highly uniform and high-quality diamond films, such as diamond coatings on spherical substrates, optoelectronic devices, microsensors, and thermal management components. By precisely controlling the substrate's suspension and spin, the shadowing and stress concentration associated with mechanical support are avoided, enabling uniform, dense diamond film deposition on spherical and curved substrates. This technology is widely applicable to the production of high-performance diamond films, particularly in applications involving miniaturized and curved substrates, and possesses significant advantages and high industrial value.

[0062] The main beneficial effects of this application include: 1. Innovative solution to the problem of thin film growth on spherical substrates. The present invention realizes the technical innovation of uniformly growing diamond films on spherical substrates through suspension support, breaking through the technical bottleneck of traditional MPCVD devices on spherical substrates. It expands the application of diamond films on spherical substrates and has significant technical innovation and industrial application value. 2. Avoiding the negative effects caused by mechanical support. The present invention adopts gas dynamics and electromagnetic suspension support technology to avoid the shadow effect and stress concentration problems brought by traditional mechanical support, and significantly improves the uniformity and quality of the film. 3. Improve film quality and growth efficiency: The present invention makes the film growth process more stable by precisely controlling the airflow, temperature and electromagnetic field, thereby improving the quality and growth efficiency of the diamond film. 4. Strong adaptability: The technology of the present invention is applicable to various spherical substrates, and parameters such as airflow configuration and electromagnetic field strength can be adjusted according to actual needs, and it has broad application prospects.

[0063] The scope of protection of the present invention is not limited to this, and any changes or replacements of the technical solutions that can be thought of without creative work should be included in the scope of protection of the present invention. The scope of protection of the present invention shall be based on the scope of protection defined in the claims.

Claims

1. A spherical substrate diamond film suspension growth device, characterized in that: Used for growing diamond films on miniaturized, curved substrates, including a chamber for providing a reaction environment and a deposition base for supporting a spherical substrate; The cavity is provided with an air inlet and an air outlet, the air inlet is for the reaction gas to enter, the air outlet is for the exhaust gas in the cavity to be discharged, and the air inlet is connected to the air outlet; The deposition base is disposed in the cavity and adapted to the air flow channel. The deposition base is provided with an air flow suspension component / air flow suspension component and an electromagnetic suspension component. The air flow suspension component / air flow suspension component and the electromagnetic suspension component suspend the spherical substrate above the deposition base and place the spherical substrate in the reaction environment. The air flow suspension component is provided with a plurality of air flow nozzles, and the plurality of air flow nozzles spray gas between the deposition base and the spherical substrate to form an air flow support layer, suspending the spherical substrate above the deposition base and placing the spherical substrate in the reaction environment; The deposition base includes an inner base, which is in the shape of an inner concave spherical surface, and the center position of the inner base is adapted to the spherical base; A base and a gas supply pipe connected to the base are provided below the deposition base, a conduit is provided at the lower portion of the cavity, the gas supply pipe is passed through the conduit, and the space between the outer wall of the gas supply pipe and the inner wall of the conduit constitutes a waveguide channel, the waveguide channel is used to transmit microwave energy emitted by the microwave source into the cavity; The airflow suspension component also includes an air inlet channel provided in the air supply pipe and an airflow regulating mechanism provided in the base. The air inlet channel is connected to the multiple airflow nozzles through the airflow regulating mechanism. The multiple airflow nozzles are arranged according to a cross line to divide the deposition base space into four sector-shaped areas. The number of airflow nozzles in each sector-shaped area gradually increases. The inner base is provided with at least 30 airflow nozzles. The airflow nozzles are regularly distributed with the center of the inner base as the center of a circle. The diameter of the airflow nozzles is 3 to 5 mm, and the nozzle spacing is 2 to 3 mm. The airflow regulating mechanism controls the multiple airflow nozzles to eject airflow to suspend the spherical base, and controls the jet velocity difference of the outermost 1-3 layers of airflow nozzles to provide power for the spherical base to suspend and spin. The deposition base is further provided with a temperature sensor, which is arranged at the center of the air flow nozzle and is used to detect the temperature of the spherical substrate; A temperature control component is provided under the deposition base. The temperature control component is sleeved on the outside of the base and connected to a temperature sensor. The temperature control component is used to adjust the temperature of the airflow ejected from the airflow nozzle and thus adjust the reaction environment temperature.

2. The spherical substrate diamond film suspension growth device according to claim 1, characterized in that: The deposition base is provided with an electromagnetic suspension component, which is provided with an electromagnetic coil. The electromagnetic coil forms a magnetic field between the deposition base and the spherical substrate, and suspends the spherical substrate above the deposition base through the magnetic field and places the spherical substrate into a reaction environment.

3. The spherical substrate diamond film suspension growth device according to claim 1, characterized in that: The deposition base is provided with an air flow suspension component and an electromagnetic suspension component. The air flow suspension component is provided with multiple air flow nozzles, and the multiple air flow nozzles spray gas between the deposition base and the spherical base to form an air flow support layer; the electromagnetic suspension component is provided with an electromagnetic coil, and the electromagnetic coil forms a magnetic field between the deposition base and the spherical base; the air flow support layer cooperates with the magnetic field to suspend the spherical base above the deposition base and place the spherical base in the reaction environment.

4. The spherical substrate diamond film suspension growth device according to any one of claims 1 to 3, characterized in that: The transverse cross section of the cavity is circular, the air inlet is arranged at the top of the cavity, and there are multiple air outlets that are equidistantly distributed with the center of the bottom surface of the cavity as the center.

5. The spherical substrate diamond film suspension growth device according to claim 4, characterized in that: The cavity includes a first chamber at the top and a second chamber at the bottom. The air inlet is arranged at the center of the top of the first chamber, and the deposition base is arranged in the second chamber. The first chamber and the second chamber are connected to form an integrated space, and the diameter of the first chamber is smaller than the diameter of the second chamber. There are multiple air outlets and they are equidistantly distributed with the center of the bottom surface of the second chamber as the center.

6. The spherical substrate diamond film suspension growth device according to claim 5, characterized in that: The air flow nozzle is inclined toward the center of the spherical base, and the inclination angle is 0°-30°.

7. The spherical substrate diamond film suspension growth device according to claim 1, characterized in that: The base and the bottom surface of the cavity are provided with a quartz waveguide window, and the quartz waveguide window isolates the waveguide channel from the space inside the cavity to prevent the cavity airflow or impurities from entering the waveguide channel.

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