Slide glass disc of semiconductor epitaxial growth equipment and epitaxial growth equipment

Abstract

The invention discloses a wafer carrying disc of semiconductor epitaxial growth equipment and the epitaxial growth equipment, the wafer carrying disc is placed in a base of a mother disc, and the back of the wafer carrying disc is provided with at least three arc-shaped air guide grooves; the arc-shaped air guide grooves are rotationally symmetrical around the rotating central axis of the slide glass disc, and when the air outlet holes of the base eject air to the slide glass disc, the slide glass disc can suspend upwards, and meanwhile, the air flows in the arc-shaped air guide grooves to drive the slide glass disc to rotate around the rotating central axis of the slide glass disc; and the gas output and the rotation are more stable. And after the slide glass disc is designed, the mother disc can replace a traditional air outlet groove with a complicated structure with the air outlet holes, so that the same suspension rotation effect is achieved, the processing difficulty of the mother disc is reduced, the risk of wear and deformation of the mother disc is reduced, and the service life of the mother disc is prolonged.

Description

[0001] This application is a divisional application. The application number of the original application is 202411227723.5, and the original application date is September 3, 2024. The invention name of the original application is a gas suspension device and MOCVD device for a multi-plate planetary MOCVD device. The entire contents of the original application are incorporated into this application by reference. Technical Field

[0002] The present invention relates to the field of semiconductor technology, and in particular to a wafer carrier, an air suspension device and an epitaxial growth device of a semiconductor epitaxial growth device. Background Art

[0003] When growing thin film materials by CVD (Chemical Vapor Deposition), the uniformity of the thin film has always been one of the most critical indicators for judging whether the growth is qualified or not. When depositing thin films on the surface of wafers, the uniformity of the thin film is generally improved by rotating the wafer carrier. When growing materials such as gallium nitride and silicon carbide, the growth temperature is generally higher than 1200℃. In such a high temperature environment, the wafer carrier rotation is generally carried out by gas suspension. Generally, multi-chip planetary MOCVD (metal-organic chemical vapor deposition) is used. Gas suspension, i.e. metal organic chemical vapor deposition, is to set complex air flow grooves on the graphite master disk relative to the placement position of the carrier disk to guide air, so as to blow the carrier disk to rotate. However, in actual production, this design is not only difficult to process, but also with the increase of use time, the rotation friction of the carrier disk causes the air guide groove to wear, affecting the air outlet of the airway and thus affecting the rotation of the carrier disk, and finally causing the uniformity of the film to decrease. At the same time, the air guide groove structure will increase the friction between the carrier disk and the graphite master disk, making the rotation obstructed, and will rub out more graphite particles, affecting the quality of film deposition. Summary of the invention

[0004] The purpose of the present invention is to solve the problems in the prior art. In a first aspect, the present invention provides an air suspension device for a multi-chip planetary MOCVD device, comprising a mother disk; at least three pedestals are evenly arranged along the circumference on the upper surface of the mother disk, and a wafer carrier is placed in each pedestal; a pin is arranged at the center of each pedestal, and at least two air outlets facing the wafer carrier are arranged on concentric circles around the pin on each pedestal, and when the number of the air outlets is greater than two, the air outlets are evenly spaced; at least three arc-shaped air guide grooves are evenly arranged on the back of each wafer carrier; the arc-shaped air guide grooves are arranged on the back of each wafer carrier. The groove is rotationally symmetrical around the rotation center axis of the carrier plate, the distance from the head end of the air guide groove on the back of each carrier plate to the rotation center axis of the carrier plate is equal to the distance from the air outlet in the base corresponding to the carrier plate to the center of the base, and the tail end of the air guide groove extends to the edge of the carrier plate; a rotation limit hole cooperating with the ejector pin is also provided at the center of the back of the carrier plate, when the air outlet sprays gas to the carrier plate, the carrier plate can be suspended upward and the gas flows in the arc-shaped air guide groove to drive the carrier plate to rotate around the rotation center axis of the carrier plate.

[0005] Optionally, the air outlet is inclined at 30-60 degrees along the vertical direction, and the airflow ejected from the air outlet is ejected obliquely upward of the master disc.

[0006] Optionally, when the number of the air outlet holes on each base is 2, the bottoms of all the air outlet holes on the master disc are cocircular, and the tops of the two air outlet holes are inclined in opposite directions.

[0007] Optionally, a plurality of gas flow channels are provided radially in the mother disk, and each gas flow channel includes a main channel and a plurality of branch channels, the number of the main channels is the same as the number of the bases, each main channel extends radially outward along the mother disk, and is divided into a plurality of branch channels after extending a preset length, the number of the branch channels connected to the main channel is the same as the number of the air outlets, and the branch channels are connected to the air outlets one-to-one.

[0008] Optionally, the branch channel extends to the edge of the master disk but does not penetrate through the side wall of the master disk.

[0009] Optionally, when there are two air outlet holes on each of the bases, each gas flow channel includes a first branch channel extending along the main channel, and also includes a second branch channel deviated from the first branch channel by a preset angle, a rounded chamfer is formed at the angle between the first branch channel and the second branch channel, the first branch channel is connected to one air outlet hole, and the second branch channel is connected to the other air outlet hole.

[0010] Optionally, nine bases are provided, and each base is spaced 5-10 mm apart.

[0011] Optionally, the number of arc-shaped air guide grooves on the back of the wafer carrier plate is 9, and the angle between the arc-shaped air guide grooves is 40°.

[0012] Optionally, the distance from the head end of the arc-shaped air guide groove on the back of each carrier plate to the rotation center axis of the carrier plate is 10-100 mm.

[0013] The second aspect of the present invention provides a mother disk of a semiconductor epitaxial growth device, comprising at least three pedestals evenly arranged along the circumference, and each pedestal is used to place a wafer carrier, a pin is provided in the center of each pedestal, and each pedestal is provided with at least two air outlets facing the wafer carrier on a concentric circle around the pin, and when the number of the air outlets is greater than two, the air outlets are distributed at equal intervals.

[0014] The third aspect of the present invention provides a carrier plate of a semiconductor epitaxial growth device, which is placed in the base of the mother plate, and the back of the carrier plate is provided with at least three arc-shaped gas guide grooves; the arc-shaped gas guide grooves are rotationally symmetrical around the rotation center axis of the carrier plate, and when the gas outlet of the base sprays gas to the carrier plate, the carrier plate can be suspended upward and the gas flows in the arc-shaped gas guide grooves to drive the carrier plate to rotate around the rotation center axis of the carrier plate.

[0015] Optionally, the distance from the head end of the air guide groove on the back of the carrier plate to the rotation center axis of the carrier plate is equal to the distance from the air outlet in the base corresponding to the carrier plate to the center of the base.

[0016] Optionally, the tail end of the air guide groove extends to the edge of the wafer carrier plate.

[0017] Optionally, a rotation limiting hole cooperating with the ejector pin of the base is further provided at the center of the back of the wafer carrier plate.

[0018] Optionally, the arc-shaped air guide groove has a depth of 1-3 mm.

[0019] Optionally, the number of the arc-shaped air guide grooves on the back of the wafer carrier plate is 9, and the angle between the arc-shaped air guide grooves is 40°.

[0020] Optionally, the diameter of the wafer carrier plate is 100-300 mm.

[0021] Optionally, the distance from the head end of the air guide groove on the back of each carrier plate to the rotation center axis of the carrier plate is 10-100 mm.

[0022] Optionally, the wafer carrier is made of graphite or ceramic material.

[0023] A fourth aspect of the present invention provides an MOCVD device, comprising any gas suspension device of the first aspect above:

[0024] A fifth aspect of the present invention provides a semiconductor epitaxial growth device, comprising: the master disc of the second aspect and / or the wafer carrier disc of the third aspect.

[0025] By adopting the above technical solution, the present invention has at least one of the following beneficial effects:

[0026] 1. The back of the wafer carrier of the semiconductor epitaxial growth device of the present invention is evenly provided with at least three arc-shaped air guide grooves; the arc-shaped air guide grooves are rotationally symmetrical around the rotation center axis of the wafer carrier, and a plurality of arc-shaped air guide grooves are arranged on the back of the wafer carrier, so that the gas outlet and rotation thereof are more stable. Moreover, after the wafer carrier is designed in this way, the master disc can use the air outlet holes to replace the traditional complex air outlet grooves, so as to achieve the same effect of suspension rotation while reducing the processing difficulty of the master disc, reducing the risk of wear and deformation of the master disc, and increasing the service life of the master disc.

[0027] 2. The distance from the head end of the air guide groove on the back of each carrier plate to the rotation center axis of the carrier plate is equal to the distance from the air outlet in the base corresponding to the carrier plate to the center of the base, and the tail end of the air guide groove extends to the edge of the carrier plate. This arrangement allows the head end of the air guide groove on the back of each carrier plate to always pass through the air outlet when the carrier plate rotates, so that the air flow can flow from the head end 7 to the tail end away from the head end, which can push the carrier plate to rotate more effortlessly.

[0028] 3. A rotation limit hole cooperating with the ejector pin is also provided at the center of the back of the wafer carrier. The ejector pin is inserted into the rotation limit hole to fix the center of the wafer carrier relative to the center of the base, and when the wafer carrier rotates, the wafer carrier rotates along the ejector pin without being out of position, so that the wafer carrier is more stably suspended. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to make the contents of the present invention more clearly understood, the present invention is further described in detail below based on specific embodiments in conjunction with the accompanying drawings.

[0030] Figure 1 This is a schematic structural diagram of an air suspension device according to an embodiment of the present invention;

[0031] Figure 2 Another schematic diagram of the structure of an air suspension device according to an embodiment of the present invention;

[0032] Figure 3 A schematic structural diagram of a master disc according to an embodiment of the present invention;

[0033] Figure 4A schematic structural diagram of a wafer carrier according to an embodiment of the present invention;

[0034] Figure 5 A schematic diagram of the structure of another master disc according to an embodiment of the present invention;

[0035] Figure 6 for Figure 5 A cross-sectional view of the master disc shown;

[0036] Figure 7 for Figure 5 Another cross-sectional view of the master disc shown;

[0037] Figure 8 for Figure 7 A partial enlarged view of the middle A;

[0038] Fig. 9 It is a schematic diagram of the large disk structure of the prior art.

[0039] The reference numerals in the accompanying drawings are:

[0040] 1. Mother disc; 2. Base; 3. Ejector pin; 4. Air outlet; 5. Arc-shaped air guide groove; 6. Carrier disc; 7. Head end; 8. Tail end; 9. Rotation limit hole; 10. Gas flow channel; 11. Main flow channel; 12. Branch flow channel; 13. First branch flow channel; 14. Second branch flow channel; 15. Wafer; 16. Rotating device; 17. Large disc; 18. Air outlet groove. DETAILED DESCRIPTION

[0041] In order to better understand the technical content of the present invention, specific embodiments are described below in conjunction with the accompanying drawings.

[0042] Various aspects of the present invention are described in this disclosure with reference to the accompanying drawings, in which many illustrative embodiments are shown. The embodiments of the present disclosure are not necessarily intended to include all aspects of the present invention. It should be understood that the various concepts and embodiments introduced above, as well as those described in more detail below, can be implemented in any of many ways, because the concepts and embodiments disclosed by the present invention are not limited to any implementation. In addition, some aspects disclosed by the present invention can be used alone or in any appropriate combination with other aspects disclosed by the present invention.

[0043] It should be noted that when an element is referred to as being "connected to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0044] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined. The meaning of "plurality" is one or more, unless otherwise clearly and specifically defined.

[0045] In the description of the present invention, it should be understood that the terms "center", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0046] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0047] Reference throughout the specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, when the phrases "in one embodiment," "in some embodiments," or "in some of these embodiments" appear in various places throughout the specification, not all references are to the same embodiment. Furthermore, in one or more embodiments, the particular features, structures, or characteristics may be combined in any suitable manner.

[0048] Please refer to Figure 1 and Figure 2, this embodiment provides a semiconductor epitaxial growth device, further, also provides a MOCVD device, further provides a multi-planetary MOCVD device, the device includes a gas suspension device. It should be noted that the semiconductor epitaxial growth device is applied to the epitaxial growth process, and the epitaxial growth, that is, the thin film growth process includes a chemical vapor deposition (CVD) process, a metal organic chemical vapor deposition (MOCVD) process, an atomic layer deposition (ALD) process, etc. The wafers 15 that can be processed by the process, equipment and system include 200 millimeters (mm), 300 mm or larger single crystal silicon (Si), multi-crystalline silicon, polycrystalline silicon, germanium (Ge), silicon carbide (SiC), glass, gallium arsenide (GaAs), such as GaInP / GaAs / Ge or ZnSe / GaAs / Ge wafers 15, but not limited thereto. Optionally, the wafer 15 is circular, but it can also be any desired shape. The thickness of the wafer 15 can be selected to be 200μm-500μm, for example, 350μm.

[0049] See also Figure 1 , Figure 2 The air suspension device of this embodiment includes a master disc 1 and a wafer carrier 6, wherein the master disc 1 is a circular master disc 1, which is arranged horizontally, and the wafer carriers 6 are distributed in a circumferential manner on the master disc 1, and are further distributed near the edge of the master disc. Each wafer carrier 6 can carry a wafer 15; a rotating device 16 is provided on the central axis L1 of the master disc 1, and the rotating device 16 can drive the master disc 1 to rotate around the central axis L1 of the master disc. The rotating device L1 is electrically connected to a system controller (not shown), and can rotate at a predetermined speed, such as 10-30rpm, under the control of the system controller. The master disc 1 can spray airflow to the bottom of the wafer carrier 6 so that the wafer carrier 6 can float upward with the wafer 15 and rotate around the central axis of rotation of the wafer carrier 6.

[0050] See also Figure 3In some embodiments, at least three bases 2 are evenly distributed along the circumference on the upper surface of the master disc 1, and a wafer carrier 6 is placed in each base 2; a pin 3 is provided in the center of each base 2, and at least two air outlets 4 facing the wafer carrier 6 are provided on the concentric circles around the pin 3 of each base 2; optionally, the number of air outlets 4 is 3, 4, 5, etc., and is not limited. When the number of the air outlets 4 is greater than 2, the air outlets 4 are evenly spaced. It should be noted that the evenly spaced distribution of the air outlets 4 means that the distances between two adjacent air outlets 4 on the concentric circles are equal. Most of the structures of the air outlets 4 of the present application are located inside the master disc 1 or the base 2, and will not be exposed to the outside. The strong airflow does not meander in the grooves of the traditional master disc 1 that are not set, which greatly reduces the wear of the air outlet structure when the wafer carrier 6 rotates, prolongs the service life of the master disc 1, and at the same time reduces the generation of wear particles, and improves the uniformity of film growth. The aperture of the air outlet hole 4 is φ3. In other embodiments, the aperture of the air outlet hole 4 is any value between φ1 and φ10.

[0051] In some embodiments, the aperture of the air outlet 4 gradually decreases from the bottom to the top, which can concentrate the airflow, making the airflow larger and more stable.

[0052] In some embodiments, the master disc 1 is made of graphite or other suitable materials, and the diameter can be selected to be 1000-2000 mm, and the carrier disc 6 is made of metal, ceramic, plastic, semiconductor or other materials.

[0053] See also Figure 5 and Figure 6 In some embodiments, the air outlet 4 is inclined at 30-60 degrees along the vertical direction, and the airflow ejected from the air outlet 4 is ejected obliquely upward of the mother disk 1 .

[0054] See also Figure 5 In some embodiments, when the number of the outlet holes 4 on each base 2 is 2, the bottoms of all the outlet holes 4 on the master disc 1 are cocircular, and the bottoms are arranged on a common circle P around the central axis L1 of rotation of the master disc 1, which can reduce the difficulty of processing. At the same time, the cocircular bottoms of the outlet holes 4 during ventilation can ensure that the distance entering the bottom of the outlet holes 4 is the same, so that the amount of gas entering each outlet hole 4 is also the same, so that the gas ejected from each outlet hole 4 is basically equivalent, and the carrier disc 6 can be suspended at the same height and the rotation speed is basically consistent, which greatly improves the uniformity of thin film growth. The tops of the two outlet holes 4 are tilted in opposite directions, so that the torque does not disappear and the carrier disc 6 rotates. Please refer to Fig. 9The conventional large plate 17 (i.e., the mother plate 1 of the present application) is provided with rotationally symmetrical arc-shaped air outlet grooves 18. Each wafer carrier 6 needs to be provided with several arc-shaped air outlet grooves 18 that are rotationally symmetrical around the center of the wafer carrier 6. The position angle of each air outlet groove 18 needs to be very precise. The entire large plate 17 is arranged with multiple processing positions, and multiple wafer carriers 6 can be processed at the same time. The multiple groups of rotationally symmetrical arc-shaped air outlet grooves 18 need to be rotationally symmetrical around the rotation center of the large plate 17. The overall structure is very complex, and the processing difficulty is very large. It is difficult to ensure the accuracy of all positions, and the size and price of the master disc 1 are dozens of times that of the carrier disc 6. Once the processing is wrong and it is scrapped, the economic loss will be huge; on the other hand, with the accumulation of use time, the air outlet groove 18 is a curved design, and the airflow frequently hits the side wall, bottom, and notch of the air outlet groove 18, and all the exposed parts will be aggravated by wear. Further, the multiple exposed structures of the air outlet groove 18 will increase the friction between the carrier disc 6 and the master disc 1, making the rotation obstructed, and will rub out more particles, affecting the quality of thin film deposition. Therefore, the master disc 1 needs to be replaced frequently during use, which is inconvenient to use and costly. Using the air outlet hole 4 instead of the arc-shaped air outlet groove, the direction of the airflow in the air outlet hole 4 will not change frequently, which greatly reduces the wear of the air outlet hole 4 and extends the service life of the master disc 1.

[0055] See also Figure 4 In some embodiments, at least three arc-shaped air guide grooves 5 are evenly arranged on the back of each carrier plate 6, and the arc-shaped air guide grooves 5 are rotationally symmetrical around the rotation center axis L2 of the carrier plate 6; the distance from the head end 7 of the arc-shaped air guide groove 5 on the back of each carrier plate 6 to the rotation center axis L2 of the carrier plate 6 is equal to the distance from the air outlet 4 in the base 2 corresponding to the carrier plate 6 to the center of the base 2. It can be understood that the center of the base 2 can also refer to the position where the ejector pin 3 is located. It can be understood that such a setting can make the head end 7 of the air guide groove on the back of each carrier plate 6 always pass through the air outlet 4 when the carrier plate 6 rotates, so that the air flow can flow from the head end 7 to the tail end 8 away from the head end 7, which can push the carrier plate 6 to rotate more effortlessly.

[0056] The tail end 8 of the arc-shaped air guide groove 5 extends to the edge of the wafer carrier 6, and the center of the back of the wafer carrier 6 is also provided with a rotation limit hole 9 that cooperates with the ejector pin 3. When the gas outlet 4 sprays gas to the wafer carrier 6, the wafer carrier 6 can float upward, and the gas flows in the arc-shaped air guide groove 5 to drive the wafer carrier 6 to rotate around the rotation center axis L2 of the wafer carrier 6.

[0057] In some embodiments, the wafer carrier plate 2 is made of graphite. In another embodiment, the wafer carrier plate 2 is made of a ceramic material, such as quartz, sapphire, silicon carbide, aluminum oxide, zirconium oxide, aluminum nitride or boron nitride. In some embodiments, the wafer carrier plate 2 has a mass of 100-1000 grams and a diameter of 100-300 mm.

[0058] See also Figure 3 and Figure 5 In one embodiment, the ejector pin 3 is inserted into the rotation limit hole 9 to fix the center of the wafer carrier 6 relative to the center of the base 2, and when the wafer carrier 6 rotates, the wafer carrier 6 rotates along the ejector pin 3 without being out of position.

[0059] In some embodiments, the distance L2 from the head end 7 of the air guide groove on the back of each carrier plate 6 to the rotation center axis of the carrier plate 6 is 10-100 mm.

[0060] In some embodiments, the master disk 1 and the carrier disk 6 are made of materials such as graphite and ceramics, without limitation.

[0061] In some embodiments, nine bases 2 are provided, and each base 2 is spaced 5-10 mm apart.

[0062] In some embodiments, the number of arc-shaped air guide grooves 5 on the back of the wafer carrier plate 6 is 9, and the angle between the arc-shaped air guide grooves 5 is 40°.

[0063] In some embodiments, the three air outlet holes 4 are all inclined at 30°-60° in a clockwise direction to further ensure the stability of the rotation of the wafer carrier plate 6 .

[0064] In some embodiments, the arc-shaped air guide groove 5 has a groove depth of 1-3 mm, which has a better air guide effect.

[0065] In some embodiments, the diameter of the master disc 1 is 1000-2000 mm.

[0066] In some embodiments, the diameter of the wafer carrier plate 6 is 100-300 mm.

[0067] See also Figure 7 In some embodiments, a plurality of gas flow channels 10 are radially provided in the master disk 1, and each gas flow channel 10 includes a main channel 11 and a plurality of branch channels 12. The number of the main channels 11 is the same as the number of the bases 2. Each main channel 11 extends radially outward along the master disk 1, and is divided into a plurality of branch channels 12 after being extended by a preset length. The number of the branch channels 12 connected to the main channel 11 is the same as the number of the air outlets 4, and the branch channels 12 are connected to the air outlets 4 one-to-one.

[0068] In some embodiments, a gas pipeline (not shown) communicating with the gas flow channel 10 is disposed below the master disc 1 , and the gas pipeline may be disposed around the rotation axis of the rotating device 16 .

[0069] In some embodiments, the branch channel 12 extends to the edge of the master disk 1 but does not penetrate the side wall of the master disk 1 .

[0070] See also Figure 7 and Figure 8 In some embodiments, when there are two outlet holes 4 in each of the bases 2, each gas flow channel 10 includes a first branch channel 13 extending along the main channel 11, and also includes a second branch channel 14 deflected from the first branch channel 13 by a preset angle, for example, the preset angle is 30°, 40°, etc. A round chamfer is formed at the angle between the first branch channel 13 and the second branch channel 14, the first branch channel 13 is connected to one outlet hole 4, and the second branch channel 14 is connected to another outlet hole 4. When the first branch channel 13 follows the main channel 11, the processing technology can be simplified and the cost can be saved. At the same time, the round chamfer formed at the angle between the first branch channel 13 and the second branch channel 14 can effectively reduce the airflow turbulence caused by the sharp chamfer. The sharp chamfer reduces the uniformity of the airflow, which is not conducive to the precise control of the floating and rotation of the carrier plate 6.

[0071] When air is blown upward through the air outlet 4 of the mother disk 1, the air flow flows into the air guide groove from the head end 7 of the air guide groove, because the air guide grooves are all arc-shaped air guide grooves 5, and the arc-shaped air guide grooves 5 are rotationally symmetrical. When the air flow is introduced, the torsional moments generated by the arc-shaped air guide grooves 5 at symmetrical positions cannot offset each other, so that part of the kinetic energy is retained by the arc-shaped air guide grooves 5. The arc-shaped air guide grooves 5 are all inclined. When the air flow from the air outlet 4 blows toward the arc-shaped air guide grooves 5, it is equivalent to applying a force to the arc-shaped air guide grooves 5 to generate a rotational moment. Under the action of this force, the carrier disk 6 will rotate continuously.

[0072] For example, during the epitaxial growth of silicon carbide, it takes 15-30 minutes for the MOCVD to heat up from the standby temperature of 600-900°C to the growth temperature of 1600°C. At the beginning of the heating, the rotation speed of the master disk 1 is slowly increased from 0rpm to 10-50rpm within 300-600 seconds through mechanical transmission. At the same time, the rotation speed of the 9 carrier disks 6 is slowly increased from 0rpm to 20-60rpm within 300-600 seconds through gas suspension. The suspension gas is generally argon or hydrogen with a flow rate of 100-1500sccm. After reaching the set rotation speed, the master disk 1 and the carrier disk 6 maintain stable rotation until the epitaxial growth of silicon carbide is completed. During the cooling process from 1600°C to 900°C (which takes about 30 minutes), the rotation speed of the master disk 1 and the carrier disk 6 is restored to 0rpm within 600 seconds.

[0073] In one embodiment, the multi-piece planetary MOCVD equipment and / or the gas suspension device includes a fluid delivery system (not shown), which can control the fluid to be selectively delivered to the gas flow channel 10 of the master disc 1. In some embodiments, the fluid delivery system includes one or more fluid sources, such as inert gases such as nitrogen, hydrogen, argon, and a fluid control device for controlling the delivery of the fluid source. The fluid control device controls the flow rate, speed and / or pressure of the fluid delivered to the gas flow channel 10 according to the instructions issued by the system controller, and then flows out from the outlet 4 connected to the gas flow channel 10. In some embodiments, the fluid control device is a conventional flow controller (MFC, Mass Flow Controller), which is connected to the system controller. In another embodiment, the fluid control device is a fixed orifice to deliver a predetermined flow of fluid at a known pressure.

[0074] A MOCVD device of this embodiment includes the master disk and / or the carrier disk of any one of the above embodiments.

[0075] A semiconductor epitaxial growth device according to the present embodiment includes the master disk and / or the wafer carrier disk according to any one of the above embodiments.

[0076] A semiconductor epitaxial growth device of this embodiment includes the gas suspension device of any one of the above embodiments.

[0077] The air suspension device of this embodiment uses an air outlet 4 to replace the traditional complex air outlet groove 18, achieving the same effect of suspension and rotation while reducing the difficulty of processing the master disc 1, reducing the risk of wear and deformation of the master disc 1, and increasing the service life of the master disc 1. At the same time, a number of arc-shaped air guide grooves 5 are set on the back of the carrier disc 6, so that its air outlet and rotation are more stable. A pin 3 is set in the center of each base 2, and a rotation limit hole 9 that cooperates with the pin 3 is also set in the center of the back of the carrier disc 6, so that the carrier disc 6 is more stable.

[0078] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A wafer carrier of a semiconductor epitaxial growth device, placed in a base of a mother disc, characterized in that: At least three arc-shaped air guide grooves are arranged on the back of the carrier plate; the arc-shaped air guide grooves are rotationally symmetrical around the rotation center axis of the carrier plate. When the air outlet of the base sprays gas toward the carrier plate, the carrier plate can be suspended upward and the gas flows in the arc-shaped air guide grooves to drive the carrier plate to rotate around the rotation center axis of the carrier plate.

2. The wafer carrier of the semiconductor epitaxial growth equipment according to claim 1, characterized in that: The distance from the head end of the air guide groove on the back of the wafer carrier to the rotation center axis of the wafer carrier is equal to the distance from the air outlet in the base corresponding to the wafer carrier to the center of the base.

3. The wafer carrier of the semiconductor epitaxial growth equipment according to claim 1, characterized in that: The tail end of the air guide groove extends to the edge of the wafer carrier.

4. The wafer carrier of the semiconductor epitaxial growth equipment according to claim 1, characterized in that: A rotation limiting hole cooperating with the ejector pin of the base is also provided at the center of the back of the wafer carrier.

5. The wafer carrier of the semiconductor epitaxial growth equipment according to claim 1, characterized in that: The depth of the arc-shaped air guide groove is 1-3 mm.

6. The wafer carrier of the semiconductor epitaxial growth equipment according to claim 1, characterized in that: The number of the arc-shaped air guide grooves on the back of the wafer carrier plate is 9, and the angles between the arc-shaped air guide grooves are 40°.

7. The wafer carrier of the semiconductor epitaxial growth equipment according to claim 1, characterized in that: The diameter of the wafer carrier plate is 100-300 mm.

8. The wafer carrier of the semiconductor epitaxial growth equipment according to claim 1, characterized in that: The distance between the head end of the air guide groove on the back of each wafer carrier and the rotation center axis of the wafer carrier is 10-100 mm.

9. The wafer carrier of the semiconductor epitaxial growth equipment according to claim 1, characterized in that: The wafer carrier is made of graphite or ceramic material.

10. An epitaxial growth device, characterized in that: A wafer carrier plate comprising the semiconductor epitaxial growth equipment as described in any one of claims 1-8.

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