Atomic gas chamber preparation method and equipment and atomic gas chamber

Abstract

The invention relates to the technical field of atomic gas chamber preparation, and discloses an atomic gas chamber preparation method and device and an atomic gas chamber. The preparation method comprises the steps that a first glass sheet, an evaporation structural part and an alkali metal collecting structural part are prepared, and the evaporation structural part is provided with a plurality of evaporation grooves arranged at intervals; the alkali metal collecting structural member is provided with a plurality of collecting grooves arranged at intervals. The evaporation structural part containing the preset chemical powder is placed in a vacuum environment, the alkali metal collecting structural part is buckled on the evaporation structural part, and each collecting groove is made to directly face and communicate with one evaporation groove to form a closed evaporation cavity; the temperature of the evaporation cavity is controlled, and alkali metal in the preset chemical powder is condensed in each collecting tank; and bonding the surface, with the collecting groove, of the alkali metal collecting structural member condensed with the alkali metal with a first glass sheet to obtain the atomic gas chamber. The prepared atomic gas chamber finished product is good in quality, and the preparation efficiency and the finished product yield are high.

Description

Technical Field

[0001] The present invention relates to the technical field of atomic gas chamber preparation, and in particular to an atomic gas chamber preparation method, equipment and an atomic gas chamber. Background Art

[0002] Chip-type atomic clocks and gyroscopes play an important role in positioning and navigation, and their core components are MEMS atomic gas chambers; this type of atomic gas chamber has the advantages of small size and mass production. At present, the widely used method for the preparation of MEMS atomic gas chambers is to use compounds to react, produce alkali metals, and collect or encapsulate the produced alkali metals in MEMS microstructures. For example, alkali metals are directly injected into the MEMS structure and then encapsulated, but because alkali metals are extremely easy to oxidize, the yield rate is low and the quality of the finished product is poor; or two chambers are used, one chamber is used to produce and prepare alkali metals, and the other chamber is used for light and alkali metals to interact, so as to separate the residues after the preparation of alkali metals and improve the intensity of the interaction between light and alkali metals, but not only there is the problem of low efficiency, but also because of the use of two chambers, the bonding yield is low and the volume of the MEMS gas chamber product is large. That is, in the prior art, whether the alkali metal is directly injected into the MEMS microstructure to reduce impurities, or the reaction residues are separated by using a double chamber, there are problems of low quality and yield of the finished product.

[0003] Therefore, there is an urgent need for an atomic gas chamber preparation method, equipment and atomic gas chamber to solve the above problems. Summary of the invention

[0004] Based on the above, the object of the present invention is to provide an atomic gas chamber preparation method, equipment and atomic gas chamber, wherein the prepared atomic gas chamber has better finished product quality, higher preparation efficiency and higher finished product yield.

[0005] To achieve the above object, the present invention adopts the following technical solutions:

[0006] A method for preparing an atomic gas chamber, comprising:

[0007] Prepare a first glass sheet, an evaporation structure and an alkali metal collecting structure, wherein the evaporation structure has a plurality of evaporation grooves arranged at intervals, and the alkali metal collecting structure has a plurality of collecting grooves arranged at intervals;

[0008] The evaporation structure containing the preset chemical powder is placed in a vacuum environment, and the alkali metal collecting structure is buckled on the evaporation structure, so that each of the collecting slots is directly connected with one of the evaporation slots to form a closed evaporation chamber;

[0009] The temperature of the evaporation chamber is controlled, and the alkali metal in the preset chemical powder is condensed in each of the collecting tanks;

[0010] The surface of the alkali metal collecting structure having the alkali metal condensed thereon and having the collecting groove is bonded to the first glass sheet to obtain an atomic gas chamber.

[0011] As a preferred solution of the method for preparing an atomic gas chamber, an intermediate structure is also prepared, and the intermediate structure has a plurality of first through holes arranged at intervals;

[0012] After placing the evaporation structure containing the preset chemical powder in a vacuum environment, the intermediate structure is first placed on the evaporation structure so that each of the first through holes is directly connected to one of the evaporation slots, and then the alkali metal collection structure is buckled on the intermediate structure so that each of the collection slots is directly connected to one of the first through holes, and each of the connected collection slots, each of the first through holes and each of the evaporation slots form a closed evaporation chamber.

[0013] As a preferred solution of the atomic gas chamber preparation method, preparing the evaporation structure includes:

[0014] Prepare a silicon wafer, perform etching on the silicon wafer to form a plurality of blind holes distributed at intervals on the silicon wafer, and obtain the evaporation structure, wherein the blind holes are the evaporation grooves; or

[0015] A silicon wafer and a second glass sheet are prepared, etching is performed on the silicon wafer to form a plurality of second through holes distributed at intervals on the silicon wafer, and then the second glass sheet is bonded to one side of the silicon wafer to close one end of the second through hole to obtain the evaporation structure.

[0016] As a preferred solution of the atomic gas chamber preparation method, a temperature control element is used to control the temperature of the evaporation chamber, one side of the temperature control element is a heating surface, and the other side is a cooling surface. The temperature control of the evaporation chamber includes:

[0017] Controlling the temperature of the heating surface at a preset heating temperature, and controlling the temperature of the cooling surface at a preset cooling temperature;

[0018] The heating surface of the temperature control component is attached to a side of the alkali metal collecting structure away from the evaporation structure.

[0019] As a preferred solution of the method for preparing an atomic gas chamber, a bonding machine is used to bond the alkali metal collecting structure on which the alkali metal is condensed and the first glass sheet.

[0020] As a preferred solution of an atomic gas chamber preparation method, after the evaporation structure is prepared, a preset chemical solution is configured and placed in each evaporation tank, and then baked, so that the preset chemical solution in the evaporation tank undergoes chemical changes and becomes powder after water evaporates.

[0021] An atomic gas chamber preparation device is used to implement the atomic gas chamber preparation method described in any of the above technical solutions, the atomic gas chamber preparation device includes a vacuum chamber and a vacuum pump, the vacuum chamber is connected to the vacuum pump, the vacuum pump is used to evacuate the vacuum chamber to form the vacuum environment in the vacuum chamber, the vacuum chamber is provided with a vacuum manipulator, a bonding machine and an evaporation and condensation mechanism; the evaporation and condensation mechanism includes a fixed table and a temperature control component, the temperature control component is arranged above the fixed table in a movable manner along the height direction, the fixed table is used to limit the placement of the evaporation structure, the temperature control component can be moved to fit with the alkali metal collection structure, and is used to control the temperature of the evaporation chamber; the vacuum manipulator is used to move the alkali metal collection structure to the bonding machine; the bonding machine is used to bond the first glass sheet placed in the bonding machine to the alkali metal collection structure.

[0022] As a preferred solution of an atomic gas chamber preparation device, the temperature control component includes a power supply, a heat conducting plate and a refrigeration module.

[0023] The refrigeration module is attached to a side of the heating plate away from the alkali metal collecting structure and is electrically connected to the power supply;

[0024] The heat-conducting disc body and the opposite surface of the alkali metal collecting structure are matched in shape, and a heating wire is embedded in the heat-conducting disc body, and the heating wire is electrically connected to the power supply.

[0025] An atomic gas chamber is prepared by the atomic gas chamber preparation method described in any of the above technical solutions.

[0026] The beneficial effects of the present invention are:

[0027] The present invention provides an atomic gas chamber preparation method. By fastening an alkali metal collecting structure to an evaporation structure, the alkali metal in a preset chemical powder is precipitated and condensed in the alkali metal collecting structure under a controllable temperature environment, which can effectively reduce the impurities in the preset chemical powder remaining in the alkali metal collecting structure, thereby facilitating improving the quality of the atomic gas chamber. Moreover, the precipitation and condensation of the alkali metal and the bonding and sealing of the alkali metal collecting structure and the evaporation structure are carried out in a vacuum environment, which can effectively avoid the oxidation of the alkali metal and the influence of particulate matter in the atmosphere on the bonding and sealing and the quality of the atomic gas chamber, so that the prepared atomic gas chamber has a high yield rate and a better finished product quality.

[0028] The present invention also provides an atomic gas chamber preparation device for realizing the above-mentioned atomic gas chamber preparation method. The atomic gas chamber preparation device has a simple structure, is easy to operate, and has a high degree of automation. The atomic gas chamber prepared by the atomic gas chamber preparation device has the advantages of a high yield rate and better finished product quality.

[0029] The present invention also provides an atomic gas chamber, which has the advantages of higher yield rate and better finished product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0031] Figure 1 is a flow chart of a method for preparing an atomic gas chamber provided by an embodiment of the present invention;

[0032] Figure 2 is a cross-sectional view of an evaporation structure provided by an embodiment of the present invention;

[0033] Figure 3 is a cross-sectional view of an alkali metal collecting structure of an evaporation structure provided by an embodiment of the present invention;

[0034] Figure 4 is a cross-sectional view of an intermediate structure of an evaporation structure provided by an embodiment of the present invention;

[0035] Figure 5 is a cross-sectional view of the alkali metal collecting structure, the intermediate structure and the evaporation structure provided by an embodiment of the present invention;

[0036] Figure 6 is a cross-sectional view of an atomic gas chamber provided by an embodiment of the present invention;

[0037] Figure 7 It is a schematic diagram of the structure of an atomic gas chamber preparation device provided in an embodiment of the present invention.

[0038] In the figure:

[0039] 1. Vacuum chamber;

[0040] 2. Vacuum manipulator;

[0041] 3. Bonding machine; 31. Processing table; 32. Pressure and temperature control panel; 33. High-voltage discharge needle;

[0042] 4. Evaporation and condensation mechanism; 41. Fixed platform; 42. Temperature control component;

[0043] 101, first glass sheet; 102, evaporation structure; 1020, evaporation tank; 1021, silicon wafer; 1022, second glass sheet; 103, alkali metal collection structure; 1030, collection tank; 104, intermediate structure; 1040, second through hole;

[0044] 100. Alkali metals. DETAILED DESCRIPTION

[0045] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0046] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0047] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0048] In the description of the present embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation of the present invention. In the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0049] like Figures 1 to 6As shown, this embodiment provides a method for preparing an atomic gas chamber, and the method for preparing an atomic gas chamber includes the following steps:

[0050] S1: prepare a first glass sheet 101, an evaporation structure 102 and an alkali metal collecting structure 103, the evaporation structure 102 has a plurality of evaporation grooves 1020 arranged at intervals, and the alkali metal collecting structure 103 has a plurality of collecting grooves 1030 arranged at intervals.

[0051] Among them, Figure 2 As shown, preparing the evaporation structure 102 specifically includes the following steps:

[0052] A silicon wafer is prepared, and etching is performed on the silicon wafer to form a plurality of blind holes distributed at intervals on the silicon wafer to obtain an evaporation structure 102, wherein the blind holes are evaporation slots 1020;

[0053] Alternatively, a silicon wafer 1021 and a second glass sheet 1022 are prepared, etching is performed on the silicon wafer 1021 to form a plurality of second through holes 1040 spaced apart on the silicon wafer 1021, and then the second glass sheet 1022 is bonded to one side of the silicon wafer 1021 to close one end of the second through hole 1040, thereby obtaining the evaporation structure 102.

[0054] It should be noted that etching on the silicon wafer 1021 is a relatively mature existing technology and will not be described in detail here.

[0055] Optionally, the cross section of the blind hole or the second through hole 1040 is circular, square or other shapes, which are specifically set according to actual needs.

[0056] It should be noted that the evaporation structure 102 can be used repeatedly, which is helpful to save the preparation cost.

[0057] In this embodiment, the structure and preparation method of the alkali metal collecting structure 103 are the same as or different from those of the evaporation structure 102. That is, the specific preparation method of the alkali metal collecting structure 103 refers to the preparation method of the evaporation structure 102 described above, for example, one of the structures prepared by any of the above methods is used as the evaporation structure 102, and the other is used as the alkali metal collecting structure 103. The structure and preparation method of the alkali metal collecting structure 103 are the same as those of the evaporation structure 102, which is convenient for saving processing steps and improving processing efficiency, and is convenient for the alkali metal collecting structure 103 and the evaporation structure 102 to be replaced.

[0058] Preferably, the evaporation structure 102 is formed by bonding a silicon wafer 1021 and a second glass sheet 1022 , and the alkali metal collection structure 103 has the same structure as the evaporation structure 102 , so that the collection groove 1030 has a greater depth, which is beneficial to improving the signal-to-noise ratio of the atomic gas chamber.

[0059] After the evaporation structure 102 is prepared, the following steps are performed:

[0060] S11: According to the atomic gas chamber to be prepared as needed, a chemical solution is prepared, and then the prepared chemical solution is dripped into each evaporation tank 1020 of the evaporation structure 102 through a pipette tool, and then the evaporation structure 102 is baked in an atmospheric environment or a vacuum environment, so that the chemical solution in the evaporation tank 1020 undergoes a chemical reaction, and the water in the chemical solution evaporates to become a preset chemical powder, which is the raw material of the alkali metal 100 to be produced.

[0061] S2: placing the evaporation structure 102 containing the preset chemical powder in a vacuum environment, and buckling the alkali metal collecting structure 103 onto the evaporation structure 102, so that each collecting slot 1030 is directly opposite to and communicates with an evaporation slot 1020 to form a closed evaporation chamber.

[0062] The alkali metal collection structure 103 and the evaporation structure 102 of the same structure have a high degree of structural uniformity after being buckled together, so that each collection slot 1030 can be directly connected with an evaporation slot 1020 to form a closed evaporation chamber. The evaporation chamber has better sealing properties, which is beneficial to improving the cleanliness of the environment in which the alkali metal 100 is produced, reducing the impact of the external environment on the environment in which the alkali metal 100 is produced, and ensuring the quality of the atomic gas chamber.

[0063] Preferably, before the alkali metal collecting structure 103 is fastened to the evaporation structure 102, the following steps are further included:

[0064] S21: Prepare an intermediate structure 104, which has a plurality of first through holes arranged at intervals. Preferably, the outer contour shape and size of the intermediate structure 104 are the same as those of the evaporation structure 102, and the number and distribution positions of the plurality of first through holes are also the same as those of the plurality of evaporation slots 1020 on the evaporation structure 102.

[0065] Exemplarily, the intermediate structure 104 is a third glass sheet, and a plurality of first through holes are formed by etching the third glass sheet.

[0066] S22: After placing the evaporation structure 102 containing the preset chemical powder in a vacuum environment, first place the intermediate structure 104 on the evaporation structure 102, so that each first through hole is directly connected to an evaporation groove 1020, and then the alkali metal collection structure 103 is buckled on the intermediate structure 104, so that each collection groove 1030 is directly connected to a first through hole, and each connected collection groove 1030, each first through hole and each evaporation groove 1020 form a closed evaporation chamber.

[0067] like Figure 5 As shown, the intermediate structure 104 is used to isolate the alkali metal collecting structure 103 and the evaporation structure 102, which can protect and isolate the side of the alkali metal collecting structure 103 having the collecting groove 1030, thereby preventing the side of the alkali metal collecting structure 103 having the collecting groove 1030 from being contaminated with impurity particles after the alkali metal collecting structure 103 is in direct contact with the evaporation structure 102, thereby preventing the subsequent bonding and sealing effect from being affected.

[0068] S3: The temperature of the evaporation chamber is controlled, and the alkali metal 100 in the preset chemical powder is condensed in each collecting tank 1030 .

[0069] By operating in a vacuum environment, subsequent evaporation and condensation reactions and operations are all carried out in a vacuum environment, which can effectively reduce the impact of water vapor and oxygen in the atmospheric environment on the preparation of alkali metal 100 during and after the preparation, and effectively reduce the impact of external particles on the subsequent atomic gas chamber sealing operation, thereby improving the finished product quality and finished product yield of the atomic gas chamber.

[0070] Among them, the vacuum degree in the vacuum environment is on the order of E-3Pa.

[0071] In this embodiment, the temperature of the evaporation chamber is controlled by a temperature control element 42. One side of the temperature control element 42 is a heating surface, and the other side is a cooling surface. The temperature control of the evaporation chamber includes:

[0072] S31: controlling the temperature of the heating surface at a preset heating temperature, and controlling the temperature of the cooling surface at a preset cooling temperature;

[0073] Among them, the temperature control range of the heating surface is from room temperature to 500°C, and the specific preset heating temperature is set according to actual needs. For example, the preset heating temperature is 300-450°C. For example, the temperature of the heating surface is controlled at 300°C, 350°C, 400°C or 450°C.

[0074] Among them, the temperature of the refrigeration surface is controlled between 0°C and room temperature, and the specific preset refrigeration temperature is set according to actual needs. For example, the preset refrigeration temperature is 0-25°C, for example, the temperature of the refrigeration surface is controlled at 0°C, 5°C, 15°C or 25°C.

[0075] Exemplarily, the temperature control component 42 includes a power supply, a heat-conducting disc and a refrigeration module. The refrigeration module is attached to the side of the heating disc facing away from the alkali metal collection structure 103 and is electrically connected to the power supply. The shapes of the opposite surfaces of the heat-conducting disc and the alkali metal collection structure 103 are adapted to each other. A heating wire is embedded in the heat-conducting disc, and the heating wire is electrically connected to the power supply. The power supply supplies power to the heating wire, which generates heat. The power supply supplies power to the refrigeration module, which generates cold. Among them, the refrigeration component is preferably a semiconductor refrigeration sheet, which has a compact structure and is easy to assemble. Of course, in other embodiments, the temperature control component 42 can also be other structures, as long as it can achieve cooling on one side and heating on the other side.

[0076] S32: attaching the heating surface of the temperature control component 42 to the side of the alkali metal collecting structure 103 facing away from the evaporation structure 102;

[0077] By heating one side of the temperature control element 42 and cooling the other side, the temperature environment around the temperature control element 42 is distributed in a gradient, so as to form a temperature gradient in the evaporation chamber, so that the alkali metal 100 in the preset chemical powder in the evaporation chamber evaporates under the required temperature environment and condenses in the collection tank 1030.

[0078] The temperature control component 42 is moved by the Z-direction linear motion module. The temperature control component 42 is connected to the output end of the Z-direction linear motion module. The temperature control component 42 is driven by the Z-direction linear motion module to move along the Z direction, where the Z direction is the height direction.

[0079] S33 : After the alkali metal 100 is condensed, the temperature control component 42 is moved away from the alkali metal collecting structure 103 .

[0080] S34: After the alkali metal is condensed, a preset amount of buffer gas is injected into the vacuum environment. The buffer gas is used to adjust the gas ratio and composition in the atomic gas chamber after bonding, and to improve the performance of the atomic gas chamber after bonding. For example, the buffer gas is nitrogen or argon, and the filling level is 50 Torr to 300 Torr.

[0081] After the alkali metal 100 is condensed, the temperature control member 42 is removed to facilitate the removal of the alkali metal collecting structure 103 for subsequent packaging steps:

[0082] S4: Bonding the surface of the alkali metal collecting structure 103 with the collecting groove 1030 to the first glass sheet 101 to obtain an atomic gas chamber. Specifically, the alkali metal collecting structure 103 with the alkali metal 100 condensed thereon and the first glass sheet 101 are bonded by a bonding machine 3 .

[0083] It should be noted that the bonding between the alkali metal collection structure 103 and the first glass sheet 101 is also carried out in a vacuum environment to prevent the oxygen in the atmospheric environment from oxidizing the alkali metal 100, and to prevent foreign particles from entering the collection tank 1030 or staying on the bonding surface between the first glass sheet 101 and the alkali metal collection structure 103 to affect the quality of the atomic gas chamber, thereby ensuring a low leakage rate of the prepared atomic gas chamber.

[0084] Specifically, after the first glass sheet 101 is prepared, the first glass sheet 101 is placed on the bonding machine 3. After the alkali metal 100 is condensed, the alkali metal collecting structure 103 is moved onto the first glass sheet 101 by the vacuum manipulator 2, and the bonding machine 3 is started to bond the bonding surfaces of the first glass sheet 101 and the alkali metal collecting structure 103.

[0085] Among them, Figure 6 As shown, the bonding machine 3 includes a processing table 31, a pressure and temperature control disk 32 and a high-voltage discharge needle 33. The first glass sheet 101 is placed and fixed on the processing table 31. A limiting device is preferably provided on the processing table 31. The limiting device can be of the same structure as the clamping device on the fixing table 41, and is used to clamp or loosen the first glass sheet 101 to ensure the position stability of the first glass sheet 101; the pressure and temperature control disk 32 is movably arranged above the processing table 31 in the height direction so that it can be pressed on the alkali metal collection structure 103 or away from the alkali metal collection structure 103. The pressure and temperature control disk 32 is used to provide pressure and the temperature required for bonding; the high-voltage discharge needle 33 is arranged on one side of the processing table 31 and is aligned with the bonding surface of the alkali metal collection structure 103 and the first glass sheet 101, and is used to apply the voltage and weak current required for bonding.

[0086] Specifically, the bonding machine 3 also includes a driving device, which drives the pressure temperature control disk 32 to drive the pressure temperature control disk 32 to move in the height direction. The driving device can be selected but not limited to a cylinder. The pressure temperature control disk 32 includes a disk body, and a heating wire is arranged in the disk body. The heating wire is externally connected to a power supply, and the power supply is used to supply power to the heating wire, so that the heating wire generates heat. The driving device drives the pressure temperature control disk 32 to move, so that the pressure temperature control disk 32 approaches the alkali metal collection structure 103, and finally presses on the alkali metal collection structure 103 with a preset pressure; at the same time, the heating wire is heated to a preset bonding temperature, and the alkali metal collection structure 103 and the first glass sheet 101 are bonded to form a closed integrated structure under the pressure, temperature, current and voltage conditions required for bonding. Exemplarily, when the alkali metal collecting structure 103 and the first glass sheet 101 are bonded, the driving device drives the pressure and temperature control disk 32 to apply a pressure of 5 kN to 10 kN, for example, 5 kN, 7 kN, 9 kN or 10 kN, on the alkali metal collecting structure 103, the pressure and temperature control disk 32 is heated to 350 to 450°C, for example, 350°C, 380°C, 400°C, 420°C or 450°C, the voltage generated by the high-voltage discharge needle 33 is 400 to 1000 V, for example, 400 V, 500 V, 600 V, 700 V, 800 V, 900 V or 1000 V, and the current is 0.5 to 5 mA, for example, 0.5 mA, 1 mA, 2 mA, 3 mA, 4 mA or 5 mA, etc.

[0087] This embodiment also provides an atomic gas chamber produced by the above atomic gas chamber production method, which has the advantages of less impurities, higher quality and higher production efficiency.

[0088] like Figure 6 As shown, this embodiment also provides an atomic gas chamber preparation device, which is used to implement the above-mentioned atomic gas chamber preparation method, and specifically includes a vacuum chamber 1 and a vacuum pump. The vacuum chamber 1 is connected to the vacuum pump. The vacuum pump is used to evacuate the vacuum chamber 1 to form a vacuum environment in the vacuum chamber 1. The vacuum chamber 1 is provided with a vacuum manipulator 2, a bonding machine 3 and an evaporation and condensation mechanism 4. The alkali metal 100 is prepared by the evaporation and condensation mechanism 4. The transfer of the structure in the atomic gas chamber preparation process is completed by the vacuum manipulator 2 to improve the degree of automation, and the final bonding and sealing is achieved by the bonding machine 3. The vacuum chamber 1 is evacuated by the vacuum pump so that the preparation of the alkali metal 100 and the bonding and sealing operation of the atomic gas chamber are carried out in a vacuum environment, which is beneficial to reduce the oxidation degree of the alkali metal 100 and reduce the residual particulate matter, while improving the bonding and sealing effect.

[0089] Specifically, the evaporation condensation mechanism 4 includes a fixed platform 41 and a temperature control member 42. The temperature control member 42 is arranged above the fixed platform 41 in a movable manner in the height direction. The fixed platform 41 is used to limit the placement of the evaporation structure 102. The temperature control member 42 can be moved to fit with the alkali metal collection structure 103 and used for heating. Among them, a clamping device is arranged on the fixed platform 41. The evaporation structure 102 is placed on the fixed platform 41, and the evaporation structure 102 is clamped or loosened by the clamping device to ensure the position stability of the evaporation structure 102, and to avoid the position deviation of the evaporation structure 102, which leads to the failure of the preparation of the alkali metal 100.

[0090] Exemplarily, the clamping device includes at least two clamping members spaced apart on the fixed platform 41, each clamping member includes a driving cylinder and a limit plate connected to the output end of the driving cylinder, and the driving cylinder drives the limit plate to move radially along the evaporation structure 102, so as to achieve the clamping, limiting or loosening of the evaporation structure 102 by at least two limit plates. The limit plate is preferably arc-shaped to improve the limiting ability of the evaporation structure 102; a protective flexible pad is provided on the side of the limit plate contacting the evaporation structure 102 to avoid damage to the evaporation structure 102.

[0091] After the alkali metal 100 is condensed, the vacuum manipulator 2 moves the alkali metal collecting structure 103 to the bonding machine 3, specifically places it on the first glass sheet 101, and then starts the bonding machine 3. The bonding machine 3 bonds the first glass sheet 101 placed in the bonding machine 3 and the alkali metal collecting structure 103. The specific structure of the bonding machine 3 refers to the corresponding description in the above-mentioned atomic gas chamber preparation method, which will not be repeated here.

[0092] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for preparing an atomic gas chamber, characterized in that: include: Prepare a first glass sheet, an evaporation structure and an alkali metal collecting structure, wherein the evaporation structure has a plurality of evaporation grooves arranged at intervals, and the alkali metal collecting structure has a plurality of collecting grooves arranged at intervals; The evaporation structure containing the preset chemical powder is placed in a vacuum environment, and the alkali metal collecting structure is buckled on the evaporation structure, so that each of the collecting slots is directly connected with one of the evaporation slots to form a closed evaporation chamber; The temperature of the evaporation chamber is controlled, and the alkali metal in the preset chemical powder is condensed in each of the collecting tanks; The surface of the alkali metal collecting structure having the alkali metal condensed thereon and having the collecting groove is bonded to the first glass sheet to obtain an atomic gas chamber.

2. The method for preparing an atomic gas chamber according to claim 1, characterized in that: Also preparing an intermediate structure, the intermediate structure having a plurality of first through holes arranged at intervals; After placing the evaporation structure containing the preset chemical powder in a vacuum environment, the intermediate structure is first placed on the evaporation structure so that each of the first through holes is directly connected to one of the evaporation slots, and then the alkali metal collection structure is buckled on the intermediate structure so that each of the collection slots is directly connected to one of the first through holes, and each of the connected collection slots, each of the first through holes and each of the evaporation slots form a closed evaporation chamber.

3. The method for preparing an atomic gas chamber according to claim 1, characterized in that: Preparing the evaporation structure comprises: Prepare a silicon wafer, perform etching on the silicon wafer to form a plurality of blind holes distributed at intervals on the silicon wafer, and obtain the evaporation structure, wherein the blind holes are the evaporation grooves; or A silicon wafer and a second glass sheet are prepared, etching is performed on the silicon wafer to form a plurality of second through holes distributed at intervals on the silicon wafer, and then the second glass sheet is bonded to one side of the silicon wafer to close one end of the second through hole to obtain the evaporation structure.

4. The method for preparing an atomic gas chamber according to claim 1, characterized in that: The temperature of the evaporation chamber is controlled by a temperature control element, one side of the temperature control element is a heating surface, and the other side is a cooling surface. The temperature control of the evaporation chamber includes: Controlling the temperature of the heating surface at a preset heating temperature, and controlling the temperature of the cooling surface at a preset cooling temperature; The heating surface of the temperature control component is attached to a side of the alkali metal collecting structure away from the evaporation structure.

5. The method for preparing an atomic gas chamber according to claim 1, characterized in that: A bonding machine is used to bond the alkali metal collecting structure with the alkali metal condensed thereon and the first glass sheet.

6. The method for preparing an atomic gas chamber according to claim 1, characterized in that: After the evaporation structure is prepared, a preset chemical solution is prepared, and the preset chemical solution is placed in each evaporation tank for baking, so that the preset chemical solution in the evaporation tank undergoes chemical changes and becomes powder after water evaporates.

7. An atomic gas chamber preparation device, used to implement the atomic gas chamber preparation method according to any one of claims 1 to 6, characterized in that: The atomic gas chamber preparation equipment comprises a vacuum chamber and a vacuum pump, wherein the vacuum chamber is connected to the vacuum pump, and the vacuum pump is used to evacuate the vacuum chamber so as to form the vacuum environment in the vacuum chamber, and a vacuum manipulator, a bonding machine and an evaporation and condensation mechanism are arranged in the vacuum chamber; The evaporation and condensation mechanism comprises a fixed platform and a temperature control component, wherein the temperature control component is arranged above the fixed platform in a movable manner in the height direction, the fixed platform is used to limit the position of the evaporation structure, and the temperature control component can be moved to fit with the alkali metal collection structure and is used to control the temperature of the evaporation chamber; The vacuum manipulator is used to move the alkali metal collection structure into the bonding machine; The bonding machine is used to bond the first glass sheet and the alkali metal collecting structure placed in the bonding machine.

8. The atomic gas chamber preparation device according to claim 7, characterized in that: The temperature control component includes a power supply, a heat conducting disc and a refrigeration module. The refrigeration module is attached to a side of the heating plate away from the alkali metal collecting structure and is electrically connected to the power supply; The shapes of the opposite surfaces of the heat-conducting disc and the alkali metal collecting structure are matched, and a heating wire is embedded in the heat-conducting disc, and the heating wire is electrically connected to the power supply.

9. An atomic gas chamber, characterized in that: The atomic gas chamber is prepared by the atomic gas chamber preparation method according to any one of claims 1 to 8.

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