Temperature field monitoring system based on gallium oxide single crystal production and monitoring method thereof

Abstract

The invention discloses a temperature field monitoring system and method based on gallium oxide single crystal production, and relates to the technical field of temperature monitoring, and the method comprises the steps: obtaining the installation position of a temperature sensor, carrying out the analysis and processing of the installation position of the temperature sensor based on a temperature field monitoring terminal, and obtaining the real-time temperature of the gallium oxide single crystal production; based on the temperature field monitoring terminal, the real-time temperature of gallium oxide single crystal production is analyzed and processed, and a real-time temperature field is determined. The method comprises the following steps: acquiring real-time temperature of gallium oxide single crystal production through a temperature sensor, constructing a temperature field according to the real-time temperature of gallium oxide single crystal production, analyzing the temperature field to determine a temperature change difference value of gallium oxide single crystal production, and finally judging the temperature change difference value of gallium oxide single crystal production to determine the gallium oxide single crystal production temperature. The temperature rising time of the heating device on the temperature field is determined, it is guaranteed that the gallium oxide single crystal obtains enough temperature support in the production process, the quality of the gallium oxide single crystal is improved, and then the rejection rate is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of temperature monitoring, and in particular to a temperature field monitoring system and a monitoring method thereof based on the production of gallium oxide single crystals. Background Art

[0002] Gallium oxide, as a material with wide bandgap and excellent thermal stability, has attracted extensive attention in the fields of power electronics and high-frequency communications in recent years. In the research of gallium oxide-based materials, dislocation is a key factor affecting its crystal quality and device performance. The presence of dislocation may lead to crystal growth defects, unstable device electrical performance, and even affect the reliability of the material.

[0003] The production of gallium oxide single crystals needs to be carried out under high temperature conditions. When the temperature of the temperature field is not high enough, the production quality of gallium oxide single crystals will be reduced, increasing the scrap rate. Summary of the invention

[0004] In order to solve the above technical problems, a temperature field monitoring system and a monitoring method based on the production of gallium oxide single crystals are provided. The technical solution solves the problem that the production of gallium oxide single crystals proposed in the above background technology needs to be carried out under high temperature conditions. When the temperature of the temperature field is not enough, the production quality of the gallium oxide single crystals will be reduced, thereby increasing the scrap rate.

[0005] In order to achieve the above purpose, the technical solution adopted by the present invention is:

[0006] A temperature field monitoring method based on gallium oxide single crystal production, comprising:

[0007] Obtain the installation position of the temperature sensor, analyze and process the installation position of the temperature sensor based on the temperature field monitoring terminal, and obtain the real-time temperature of the gallium oxide single crystal production;

[0008] Based on the temperature field monitoring terminal, the real-time temperature of gallium oxide single crystal production is analyzed and processed to determine the real-time temperature field;

[0009] Obtain the production standard of gallium oxide single crystal, analyze and process the real-time temperature field and the production standard of gallium oxide single crystal based on the temperature field monitoring terminal, and determine the temperature change difference of gallium oxide single crystal production;

[0010] Based on the temperature field monitoring terminal, the temperature change difference of gallium oxide single crystal production is judged and processed to determine the temperature adjustment coordinates;

[0011] The temperature field monitoring terminal adjusts the parameters of the heating equipment according to the temperature adjustment coordinates to increase the temperature of the real-time temperature field.

[0012] Preferably, the step of obtaining the installation position of the temperature sensor, analyzing and processing the installation position of the temperature sensor based on the temperature field monitoring terminal, and obtaining the real-time temperature of the gallium oxide single crystal production specifically comprises the following steps:

[0013] Based on the temperature field monitoring terminal, the database system is processed for data extraction to obtain the design drawings of the production location of gallium oxide single crystals;

[0014] Based on the temperature field monitoring terminal, the design drawings of the gallium oxide single crystal production location are processed to extract information and determine the installation location of the temperature sensor;

[0015] Based on the temperature monitoring terminal, data extraction and processing are performed on the temperature sensor at the installation location of the temperature sensor to obtain the real-time temperature of the gallium oxide single crystal production.

[0016] Preferably, the real-time temperature of the gallium oxide single crystal production is analyzed and processed based on the temperature field monitoring terminal, and determining the real-time temperature field specifically includes the following steps:

[0017] Based on the temperature field monitoring terminal, the design drawings of the gallium oxide single crystal production location are processed to extract information and obtain the installation location of the gallium oxide single crystal production machine;

[0018] The temperature field monitoring terminal constructs a three-dimensional rectangular coordinate system of temperature change at the center of the installation position of the gallium oxide single crystal production machine, and the center of the installation position of the gallium oxide single crystal production machine is the coordinate origin, wherein the parameters of the X-axis and the Y-axis are distances, and the parameter of the Z-axis is temperature;

[0019] Based on the temperature field monitoring terminal, the real-time temperature of gallium oxide single crystal production and the three-dimensional rectangular coordinate system of temperature change are analyzed and processed to determine the real-time temperature field.

[0020] Preferably, the real-time temperature of the gallium oxide single crystal production and the three-dimensional rectangular coordinate system of the temperature change are analyzed and processed based on the temperature field monitoring terminal to determine the real-time temperature field, which specifically includes the following steps:

[0021] The temperature field monitoring terminal plots the temperature sensor installation position in the temperature change three-dimensional rectangular coordinate system, and obtains the X-axis coordinate and the Y-axis coordinate of the temperature sensor;

[0022] The temperature field monitoring terminal plots the real-time temperature of the gallium oxide single crystal production in the three-dimensional rectangular coordinate system of temperature change according to the X-axis coordinate and Y-axis coordinate of the temperature sensor, and obtains the Z-axis coordinate of the temperature sensor;

[0023] The temperature field monitoring terminal draws a model according to the X-axis coordinate of the temperature sensor, the Y-axis coordinate of the temperature sensor, and the Z-axis coordinate of the temperature sensor to determine the real-time temperature field.

[0024] Preferably, the method of obtaining the gallium oxide single crystal production standard, analyzing and processing the real-time temperature field and the gallium oxide single crystal production standard based on the temperature field monitoring terminal, and determining the temperature change difference of the gallium oxide single crystal production specifically comprises the following steps:

[0025] Based on the temperature field monitoring terminal, the database system is processed for information extraction to obtain the production standards of gallium oxide single crystals;

[0026] Based on the temperature field monitoring terminal, data extraction and processing of gallium oxide single crystal production standards are performed to obtain the temperature required for gallium oxide single crystal production;

[0027] Based on the temperature field monitoring terminal, the difference between the temperature required for gallium oxide single crystal production and the real-time temperature field is calculated to determine the temperature change difference in gallium oxide single crystal production.

[0028] Preferably, the specific calculation formula for determining the temperature change difference in the production of gallium oxide single crystals is:

[0029] T e =T 1 -T i ;

[0030] Where, T e is the temperature difference of gallium oxide single crystal production; T 1 The temperature required for the production of gallium oxide single crystals; T i is the real-time temperature of the gallium oxide single crystal production; i is the installation position of the temperature sensor corresponding to the real-time temperature of the gallium oxide single crystal production.

[0031] Preferably, the temperature field monitoring terminal is used to judge the temperature change difference of the gallium oxide single crystal production, and determine the temperature adjustment coordinates, which specifically includes the following steps:

[0032] Based on the temperature field monitoring terminal, the temperature change difference of gallium oxide single crystal production is compared and judged with the set temperature threshold;

[0033] If the temperature change difference of the gallium oxide single crystal production is less than the set temperature threshold, the real-time temperature field temperature meets the gallium oxide single crystal production requirements;

[0034] If the temperature change difference in the production of the gallium oxide single crystal is greater than or equal to the set temperature threshold, the temperature in this area of ​​the real-time temperature field is too low and cannot meet the production requirements of the gallium oxide single crystal. The temperature field monitoring terminal records the temperature sensor installation position corresponding to the temperature change difference in the production of the gallium oxide single crystal, and sets the temperature sensor installation position as the temperature adjustment coordinate.

[0035] Preferably, the temperature field monitoring terminal adjusts the parameters of the heating device according to the temperature adjustment coordinates, and raising the temperature of the real-time temperature field specifically includes the following steps:

[0036] Based on the temperature field monitoring terminal, the temperature change difference of the gallium oxide single crystal production and the set temperature threshold are calculated to determine the temperature to be increased;

[0037] Based on the temperature field monitoring terminal, the temperature to be increased is analyzed and processed to obtain the heating time;

[0038] The temperature field monitoring terminal controls the temperature sensor to collect temperature data of the real-time temperature field according to the heating time, and determines the temperature of the real-time temperature field.

[0039] Preferably, the step of analyzing and processing the temperature to be increased based on the temperature field monitoring terminal to obtain the heating time specifically includes the following steps:

[0040] Based on the temperature field monitoring terminal, the database system is processed for information extraction to obtain the factory specification parameters of the heating equipment;

[0041] Based on the temperature field monitoring terminal, the factory specification parameters of the heating equipment are extracted and processed to obtain the heating speed;

[0042] Based on the temperature field monitoring terminal, the heating speed and the temperature to be raised are calculated and processed to obtain the heating time.

[0043] Furthermore, a temperature field monitoring system based on the production of gallium oxide single crystals is proposed, which is used to implement the temperature field monitoring method based on the production of gallium oxide single crystals as described above, including:

[0044] A temperature field monitoring terminal, which is used to analyze the real-time temperature of gallium oxide single crystal production, construct a real-time temperature field, calculate the temperature change difference of gallium oxide single crystal production, and determine the temperature adjustment coordinates. The temperature field monitoring terminal is used to control data transmission and information interaction between various modules;

[0045] A database system, the database system is used to store design drawings of gallium oxide single crystal production locations, gallium oxide single crystal production standards, and factory specification parameters of heating equipment;

[0046] An information analysis module, the information analysis module is used to extract information from the design drawings of the production location of the gallium oxide single crystal and the installation location of the temperature sensor;

[0047] A temperature sensor, which is used to collect the real-time temperature of the gallium oxide single crystal production;

[0048] A coordinate system construction module, wherein the coordinate system construction module constructs a temperature change three-dimensional rectangular coordinate system according to the installation position of the gallium oxide single crystal production machine;

[0049] A model drawing module, wherein the model drawing module draws a model according to the X-axis coordinate of the temperature sensor, the Y-axis coordinate of the temperature sensor, and the Z-axis coordinate of the temperature sensor to determine the real-time temperature field;

[0050] A data calculation module, which performs difference calculation on the temperature required for gallium oxide single crystal production and the real-time temperature field to determine the temperature change difference of gallium oxide single crystal production;

[0051] A coordinate determination module, which compares and determines the temperature change difference of the gallium oxide single crystal production with the set temperature threshold to determine the temperature adjustment coordinates;

[0052] A temperature calculation module, which performs a difference calculation on a temperature change difference in the production of gallium oxide single crystals and a set temperature threshold to determine a temperature to be increased;

[0053] A parameter adjustment module is used to adjust the parameters of the heating device according to the temperature to be increased.

[0054] Compared with the prior art, the present invention provides a temperature field monitoring system and a monitoring method based on the production of gallium oxide single crystals, which have the following beneficial effects:

[0055] The present invention firstly collects the real-time temperature of gallium oxide single crystal production through a temperature sensor, then constructs a temperature field according to the real-time temperature of gallium oxide single crystal production, and then analyzes the temperature field to determine the temperature change difference of gallium oxide single crystal production. Finally, by judging the temperature change difference of gallium oxide single crystal production, the heating time of the temperature field by the heating equipment is determined, thereby ensuring that the gallium oxide single crystal obtains sufficient temperature support during production, improving the quality of the gallium oxide single crystal, and further reducing the scrap rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 This is a flow chart of steps S100-S500 in a temperature field monitoring method based on gallium oxide single crystal production proposed by the present invention;

[0057] Figure 2 This is a flow chart of steps S101-S103 in a temperature field monitoring method based on gallium oxide single crystal production proposed by the present invention;

[0058] Figure 3 This is a flow chart of steps S201-S203 in a temperature field monitoring method based on gallium oxide single crystal production proposed by the present invention;

[0059] Figure 4 This is a flow chart of steps S2031-S2033 in a temperature field monitoring method based on gallium oxide single crystal production proposed by the present invention;

[0060] Figure 5 This is a flow chart of steps S301-S303 in a temperature field monitoring method based on gallium oxide single crystal production proposed by the present invention;

[0061] Figure 6 This is a flow chart of steps S401-S403 in a temperature field monitoring method based on gallium oxide single crystal production proposed by the present invention;

[0062] Figure 7 This is a flow chart of steps S501-S503 in a temperature field monitoring method based on gallium oxide single crystal production proposed by the present invention;

[0063] Figure 8 This is a flow chart of steps S5021-S5023 in a temperature field monitoring method based on gallium oxide single crystal production proposed by the present invention;

[0064] Fig. 9 This is a structural block diagram of a temperature field monitoring system based on gallium oxide single crystal production proposed by the present invention. DETAILED DESCRIPTION

[0065] The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are only examples, and those skilled in the art may think of other obvious variations.

[0066] Reference Figure 1 As shown, a temperature field monitoring method based on gallium oxide single crystal production includes:

[0067] S100, obtaining the installation position of the temperature sensor, analyzing and processing the installation position of the temperature sensor based on the temperature field monitoring terminal, and obtaining the real-time temperature of the gallium oxide single crystal production;

[0068] S200, analyzing and processing the real-time temperature of gallium oxide single crystal production based on the temperature field monitoring terminal to determine the real-time temperature field;

[0069] S300, obtaining the gallium oxide single crystal production standard, analyzing and processing the real-time temperature field and the gallium oxide single crystal production standard based on the temperature field monitoring terminal, and determining the temperature change difference of the gallium oxide single crystal production;

[0070] S400, based on the temperature field monitoring terminal, judging and processing the temperature change difference of the gallium oxide single crystal production, and determining the temperature adjustment coordinates;

[0071] S500, the temperature field monitoring terminal adjusts the parameters of the heating device according to the temperature adjustment coordinates to increase the temperature of the real-time temperature field;

[0072] Those skilled in the art can understand that the production of gallium oxide single crystals is carried out under high temperature conditions. When the temperature of some areas in the temperature field is lower than the temperature required for the production of gallium oxide single crystals, the quality of the gallium oxide single crystals will be reduced, thereby increasing the scrap rate. Therefore, the temperature of each area of ​​the gallium oxide single crystal production equipment is collected by a temperature sensor, a temperature field is constructed, the temperature field is analyzed, and the area with insufficient temperature is determined. Finally, the heating equipment is heated to ensure that the temperature of each area of ​​the temperature field can reach the temperature required for the production of gallium oxide single crystals, thereby improving the quality of the gallium oxide single crystals and reducing the scrap rate.

[0073] Reference Figure 2 As shown, obtaining the installation position of the temperature sensor, analyzing and processing the installation position of the temperature sensor based on the temperature field monitoring terminal, and obtaining the real-time temperature of the gallium oxide single crystal production specifically include the following steps:

[0074] S101, based on the temperature field monitoring terminal, extracting data from the database system to obtain the design drawings of the production location of the gallium oxide single crystal;

[0075] S102, extracting information from the design drawings of the gallium oxide single crystal production location based on the temperature field monitoring terminal to determine the installation location of the temperature sensor;

[0076] S103, based on the temperature monitoring terminal, extracting and processing the data of the temperature sensor at the installation position of the temperature sensor to obtain the real-time temperature of the gallium oxide single crystal production;

[0077] In this embodiment, in order to monitor the temperature of each area of ​​the temperature field, it is necessary to install a temperature sensor in the temperature field to monitor the temperature, so as to realize real-time monitoring of the temperature of the temperature field and avoid the temperature of the temperature field being too low, which may affect the production quality of the gallium oxide single crystal.

[0078] Reference Figure 3 As shown, based on the temperature field monitoring terminal, the real-time temperature of the gallium oxide single crystal production is analyzed and processed, and the real-time temperature field is determined, which specifically includes the following steps:

[0079] S201, extracting information from the design drawings of the gallium oxide single crystal production location based on the temperature field monitoring terminal to obtain the installation location of the gallium oxide single crystal production machine;

[0080] S202, the temperature field monitoring terminal constructs a three-dimensional rectangular coordinate system of temperature change with the center of the installation position of the gallium oxide single crystal production machine, the center of the installation position of the gallium oxide single crystal production machine is the coordinate origin, wherein the parameters of the X-axis and the Y-axis are distances, and the parameter of the Z-axis is temperature;

[0081] S203, based on the temperature field monitoring terminal, analyzing and processing the real-time temperature of the gallium oxide single crystal production and the three-dimensional rectangular coordinate system of the temperature change to determine the real-time temperature field.

[0082] Reference Figure 4 As shown, based on the temperature field monitoring terminal, the real-time temperature of the gallium oxide single crystal production and the three-dimensional rectangular coordinate system of the temperature change are analyzed and processed, and the real-time temperature field is determined, which specifically includes the following steps:

[0083] S2031. The temperature field monitoring terminal plots the temperature sensor installation position in the temperature change three-dimensional rectangular coordinate system, and obtains the X-axis coordinate and the Y-axis coordinate of the temperature sensor;

[0084] S2032. The temperature field monitoring terminal plots the real-time temperature of the gallium oxide single crystal production in a three-dimensional rectangular coordinate system of temperature change according to the X-axis coordinate and the Y-axis coordinate of the temperature sensor, and obtains the Z-axis coordinate of the temperature sensor;

[0085] S2033, the temperature field monitoring terminal draws a model according to the X-axis coordinate of the temperature sensor, the Y-axis coordinate of the temperature sensor, and the Z-axis coordinate of the temperature sensor to determine the real-time temperature field;

[0086] In this embodiment, the center of the installation position of the gallium oxide single crystal production machine is set as the coordinate origin, the horizontal and vertical directions of the center of the installation position of the gallium oxide single crystal production machine are set as the X-axis and Y-axis, the temperature is set as the Z-axis, and a three-dimensional rectangular coordinate system of temperature change is established. The real-time temperatures of the gallium oxide single crystal production at various positions are connected to form a real-time temperature field. By analyzing the real-time temperature field, it is determined which area's temperature does not meet the temperature required for the production of the gallium oxide single crystal. It is worth noting that each point in the three-dimensional rectangular coordinate system of temperature change also represents the installation position of the temperature sensor.

[0087] Reference Figure 5 As shown, obtaining the gallium oxide single crystal production standard, analyzing and processing the real-time temperature field and the gallium oxide single crystal production standard based on the temperature field monitoring terminal, and determining the temperature change difference of the gallium oxide single crystal production specifically includes the following steps:

[0088] S301, based on the temperature field monitoring terminal, extract information from the database system to obtain the production standard of gallium oxide single crystal;

[0089] S302, based on the temperature field monitoring terminal, extracting and processing data of the gallium oxide single crystal production standard to obtain the temperature required for the gallium oxide single crystal production;

[0090] S303, based on the temperature field monitoring terminal, performing a difference calculation between the temperature required for gallium oxide single crystal production and the real-time temperature field, and determining a temperature change difference for gallium oxide single crystal production;

[0091] Among them, the specific calculation formula for determining the temperature change difference in the production of gallium oxide single crystals is:

[0092] T e =T 1 -T i ;

[0093] Where, T e is the temperature difference of gallium oxide single crystal production; T 1 The temperature required for the production of gallium oxide single crystals; T i is the real-time temperature of the gallium oxide single crystal production; i is the installation position of the temperature sensor corresponding to the real-time temperature of the gallium oxide single crystal production;

[0094] In this embodiment, in order to determine whether the temperature of each area in the temperature field meets the standard required for the production of gallium oxide single crystals, the production standard of gallium oxide single crystals is obtained by reading data from the database system, and then the parameters of the production standard of gallium oxide single crystals are extracted to determine the temperature required for the production of gallium oxide single crystals. Finally, the temperature of each area in the temperature field and the temperature required for the production of gallium oxide single crystals are calculated to obtain the temperature change difference of the gallium oxide single crystal production in each area of ​​the temperature field.

[0095] Reference Figure 6 As shown, based on the temperature field monitoring terminal, the temperature change difference of the gallium oxide single crystal production is judged and processed, and the temperature adjustment coordinates are determined, which specifically includes the following steps:

[0096] S401, based on the temperature field monitoring terminal, comparing and judging the temperature change difference of the gallium oxide single crystal production and the set temperature threshold;

[0097] S402, if the temperature change difference of the gallium oxide single crystal production is less than the set temperature threshold, the real-time temperature field temperature meets the gallium oxide single crystal production requirement;

[0098] S403, if the temperature change difference of the gallium oxide single crystal production is greater than or equal to the set temperature threshold, the temperature of the area in the real-time temperature field is too low and cannot meet the gallium oxide single crystal production requirements, the temperature field monitoring terminal records the temperature sensor installation position corresponding to the temperature change difference of the gallium oxide single crystal production, and sets the temperature sensor installation position as the temperature adjustment coordinate;

[0099] In this embodiment, the temperature change difference in the production of gallium oxide single crystals is judged to determine whether it meets the production standard of gallium oxide single crystals. If not, the installation position of the temperature sensor corresponding to the temperature change difference in the production of gallium oxide single crystals is recorded, and then the temperature of the area is increased by controlling the heating equipment so that the temperature of the area meets the production standard of gallium oxide single crystals, thereby improving the quality of gallium oxide single crystal production and reducing the scrap rate.

[0100] Reference Figure 7 As shown, the temperature field monitoring terminal adjusts the parameters of the heating device according to the temperature adjustment coordinates, and raising the temperature of the real-time temperature field specifically includes the following steps:

[0101] S501, based on the temperature field monitoring terminal, performing a difference calculation between the temperature change difference of the gallium oxide single crystal production and the set temperature threshold, and determining the temperature to be increased;

[0102] S502, based on the temperature field monitoring terminal, analyzing and processing the temperature to be increased to obtain the heating time;

[0103] S503, the temperature field monitoring terminal controls the temperature sensor to collect temperature data of the real-time temperature field according to the heating time, and determines the temperature of the real-time temperature field;

[0104] In this embodiment, the heating time is determined by calculating the heating speed of the heating equipment and the temperature to be increased. The staff controls the temperature sensor to collect the temperature of the heating area according to the heating time. When the temperature of the area reaches the temperature required for the production of gallium oxide single crystals, the production of gallium oxide single crystals is carried out to avoid the situation where the quality of the gallium oxide single crystals is reduced due to too low temperature. At the same time, the scrap rate is also reduced. In addition, the staff monitors the temperature of the area through the heating time, avoiding multiple collections of temperature sensors, reducing the occupancy of storage space, and enabling the staff to accurately grasp the temperature changes of the temperature field, thereby indirectly shortening the production cycle of the gallium oxide single crystals.

[0105] Reference Figure 8 As shown, based on the temperature field monitoring terminal, analyzing and processing the temperature to be increased, and obtaining the heating time specifically include the following steps:

[0106] S5021. Based on the temperature field monitoring terminal, extract information from the database system to obtain factory specification parameters of the heating equipment;

[0107] S5022. Based on the temperature field monitoring terminal, extract and process the factory specification parameters of the heating equipment to obtain the heating speed;

[0108] S5023. Based on the temperature field monitoring terminal, the heating speed and the temperature to be increased are calculated and processed to obtain the heating time.

[0109] Reference Fig. 9 As shown, a temperature field monitoring system based on gallium oxide single crystal production is used to implement the temperature field monitoring method based on gallium oxide single crystal production as described above, including:

[0110] A temperature field monitoring terminal, which is used to analyze the real-time temperature of gallium oxide single crystal production, construct a real-time temperature field, calculate the temperature change difference of gallium oxide single crystal production, and determine the temperature adjustment coordinates. The temperature field monitoring terminal is used to control data transmission and information interaction between various modules;

[0111] A database system, the database system is used to store design drawings of gallium oxide single crystal production locations, gallium oxide single crystal production standards, and factory specification parameters of heating equipment;

[0112] An information analysis module, which is used to extract information from the design drawings of the production location of the gallium oxide single crystal and the installation location of the temperature sensor;

[0113] A temperature sensor, which is used to collect the real-time temperature of the gallium oxide single crystal production;

[0114] A coordinate system construction module, wherein the coordinate system construction module constructs a temperature change three-dimensional rectangular coordinate system according to the installation position of the gallium oxide single crystal production machine;

[0115] A model drawing module, wherein the model drawing module draws a model according to the X-axis coordinate of the temperature sensor, the Y-axis coordinate of the temperature sensor, and the Z-axis coordinate of the temperature sensor to determine the real-time temperature field;

[0116] A data calculation module, which performs difference calculation on the temperature required for gallium oxide single crystal production and the real-time temperature field to determine the temperature change difference of gallium oxide single crystal production;

[0117] A coordinate determination module, which compares and determines the temperature change difference of the gallium oxide single crystal production with the set temperature threshold to determine the temperature adjustment coordinates;

[0118] A temperature calculation module, which performs a difference calculation on a temperature change difference in the production of gallium oxide single crystals and a set temperature threshold to determine a temperature to be increased;

[0119] A parameter adjustment module is used to adjust the parameters of the heating device according to the temperature to be increased.

[0120] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions only describe the principles of the present invention. The present invention may be subject to various changes and improvements without departing from the spirit and scope of the present invention. These changes and improvements fall within the scope of the present invention. The scope of protection claimed by the present invention is defined by the attached claims and their equivalents.

Claims

1. A temperature field monitoring method based on gallium oxide single crystal production, characterized in that: include: Obtain the installation position of the temperature sensor, analyze and process the installation position of the temperature sensor based on the temperature field monitoring terminal, and obtain the real-time temperature of the gallium oxide single crystal production; Based on the temperature field monitoring terminal, the real-time temperature of gallium oxide single crystal production is analyzed and processed to determine the real-time temperature field; Obtain the production standard of gallium oxide single crystal, analyze and process the real-time temperature field and the production standard of gallium oxide single crystal based on the temperature field monitoring terminal, and determine the temperature change difference of gallium oxide single crystal production; Based on the temperature field monitoring terminal, the temperature change difference of gallium oxide single crystal production is judged and processed to determine the temperature adjustment coordinates; The temperature field monitoring terminal adjusts the parameters of the heating equipment according to the temperature adjustment coordinates to increase the temperature of the real-time temperature field.

2. A temperature field monitoring method based on gallium oxide single crystal production according to claim 1, characterized in that: The method of obtaining the installation position of the temperature sensor, analyzing and processing the installation position of the temperature sensor based on the temperature field monitoring terminal, and obtaining the real-time temperature of the gallium oxide single crystal production specifically includes the following steps: Based on the temperature field monitoring terminal, the database system is processed for data extraction to obtain the design drawings of the production location of gallium oxide single crystals; Based on the temperature field monitoring terminal, the design drawings of the gallium oxide single crystal production location are processed to extract information and determine the installation location of the temperature sensor; Based on the temperature monitoring terminal, data extraction and processing are performed on the temperature sensor at the installation location of the temperature sensor to obtain the real-time temperature of the gallium oxide single crystal production.

3. The temperature field monitoring method based on gallium oxide single crystal production according to claim 1 is characterized in that: The real-time temperature of the gallium oxide single crystal production is analyzed and processed based on the temperature field monitoring terminal, and the real-time temperature field is determined, which specifically includes the following steps: Based on the temperature field monitoring terminal, the design drawings of the gallium oxide single crystal production location are processed to extract information and obtain the installation location of the gallium oxide single crystal production machine; The temperature field monitoring terminal constructs a three-dimensional rectangular coordinate system of temperature change at the center of the installation position of the gallium oxide single crystal production machine, and the center of the installation position of the gallium oxide single crystal production machine is the coordinate origin, wherein the parameters of the X-axis and the Y-axis are distances, and the parameter of the Z-axis is temperature; Based on the temperature field monitoring terminal, the real-time temperature of gallium oxide single crystal production and the three-dimensional rectangular coordinate system of temperature change are analyzed and processed to determine the real-time temperature field.

4. The method for monitoring the temperature field based on the production of gallium oxide single crystal according to claim 3, characterized in that: The real-time temperature of the gallium oxide single crystal production and the three-dimensional rectangular coordinate system of temperature change are analyzed and processed based on the temperature field monitoring terminal to determine the real-time temperature field, which specifically includes the following steps: The temperature field monitoring terminal plots the temperature sensor installation position in the temperature change three-dimensional rectangular coordinate system, and obtains the X-axis coordinate and the Y-axis coordinate of the temperature sensor; The temperature field monitoring terminal plots the real-time temperature of the gallium oxide single crystal production in the three-dimensional rectangular coordinate system of temperature change according to the X-axis coordinate and Y-axis coordinate of the temperature sensor, and obtains the Z-axis coordinate of the temperature sensor; The temperature field monitoring terminal draws a model according to the X-axis coordinate of the temperature sensor, the Y-axis coordinate of the temperature sensor, and the Z-axis coordinate of the temperature sensor to determine the real-time temperature field.

5. The method for monitoring the temperature field based on the production of gallium oxide single crystal according to claim 1, characterized in that: The method of obtaining the gallium oxide single crystal production standard, analyzing and processing the real-time temperature field and the gallium oxide single crystal production standard based on the temperature field monitoring terminal, and determining the temperature change difference of the gallium oxide single crystal production specifically includes the following steps: Based on the temperature field monitoring terminal, the database system is processed for information extraction to obtain the production standards of gallium oxide single crystals; Based on the temperature field monitoring terminal, data extraction and processing of gallium oxide single crystal production standards are carried out to obtain the temperature required for gallium oxide single crystal production; Based on the temperature field monitoring terminal, the difference between the temperature required for gallium oxide single crystal production and the real-time temperature field is calculated to determine the temperature change difference in gallium oxide single crystal production.

6. The method for monitoring the temperature field based on the production of gallium oxide single crystal according to claim 5, characterized in that: The specific calculation formula for determining the temperature change difference in the production of gallium oxide single crystals is: T e =T1-T i ; Where, T e is the temperature difference of gallium oxide single crystal production; T1 is the temperature required for gallium oxide single crystal production; T i is the real-time temperature of the gallium oxide single crystal production; i is the installation position of the temperature sensor corresponding to the real-time temperature of the gallium oxide single crystal production.

7. The method for monitoring the temperature field based on the production of gallium oxide single crystal according to claim 1, characterized in that: The method of judging and processing the temperature change difference of the gallium oxide single crystal production based on the temperature field monitoring terminal and determining the temperature adjustment coordinates specifically includes the following steps: Based on the temperature field monitoring terminal, the temperature change difference of gallium oxide single crystal production is compared and judged with the set temperature threshold; If the temperature change difference of the gallium oxide single crystal production is less than the set temperature threshold, the real-time temperature field temperature meets the gallium oxide single crystal production requirements; If the temperature change difference in the production of the gallium oxide single crystal is greater than or equal to the set temperature threshold, the temperature in this area of ​​the real-time temperature field is too low and cannot meet the production requirements of the gallium oxide single crystal. The temperature field monitoring terminal records the temperature sensor installation position corresponding to the temperature change difference in the production of the gallium oxide single crystal, and sets the temperature sensor installation position as the temperature adjustment coordinate.

8. The method for temperature field monitoring based on gallium oxide single crystal production according to claim 1, characterized in that: The temperature field monitoring terminal adjusts the parameters of the heating device according to the temperature adjustment coordinates, and raising the temperature of the real-time temperature field specifically includes the following steps: Based on the temperature field monitoring terminal, the temperature change difference of the gallium oxide single crystal production and the set temperature threshold are calculated to determine the temperature to be increased; Based on the temperature field monitoring terminal, the temperature to be increased is analyzed and processed to obtain the heating time; The temperature field monitoring terminal controls the temperature sensor to collect temperature data of the real-time temperature field according to the heating time, and determines the temperature of the real-time temperature field.

9. The method for monitoring the temperature field based on the production of gallium oxide single crystal according to claim 8, characterized in that: The temperature field monitoring terminal is used to analyze and process the temperature to be increased, and obtain the heating time, which specifically includes the following steps: Based on the temperature field monitoring terminal, the database system is processed for information extraction to obtain the factory specification parameters of the heating equipment; Based on the temperature field monitoring terminal, the factory specification parameters of the heating equipment are extracted and processed to obtain the heating speed; Based on the temperature field monitoring terminal, the heating speed and the temperature to be raised are calculated and processed to obtain the heating time.

10. A temperature field monitoring system based on gallium oxide single crystal production, used to implement a temperature field monitoring method based on gallium oxide single crystal production as claimed in any one of claims 1 to 9, characterized in that: include: A temperature field monitoring terminal, which is used to analyze the real-time temperature of gallium oxide single crystal production, construct a real-time temperature field, calculate the temperature change difference of gallium oxide single crystal production, and determine the temperature adjustment coordinates. The temperature field monitoring terminal is used to control data transmission and information interaction between various modules; A database system, the database system is used to store design drawings of gallium oxide single crystal production locations, gallium oxide single crystal production standards, and factory specification parameters of heating equipment; An information analysis module, the information analysis module is used to extract information from the design drawings of the production location of the gallium oxide single crystal and the installation location of the temperature sensor; A temperature sensor, which is used to collect the real-time temperature of the gallium oxide single crystal production; A coordinate system construction module, wherein the coordinate system construction module constructs a temperature change three-dimensional rectangular coordinate system according to the installation position of the gallium oxide single crystal production machine; A model drawing module, wherein the model drawing module draws a model according to the X-axis coordinate of the temperature sensor, the Y-axis coordinate of the temperature sensor, and the Z-axis coordinate of the temperature sensor to determine the real-time temperature field; A data calculation module, which performs difference calculation on the temperature required for gallium oxide single crystal production and the real-time temperature field to determine the temperature change difference of gallium oxide single crystal production; A coordinate determination module, which compares and determines the temperature change difference of the gallium oxide single crystal production with the set temperature threshold to determine the temperature adjustment coordinates; A temperature calculation module, which performs a difference calculation on a temperature change difference in the production of gallium oxide single crystals and a set temperature threshold to determine a temperature to be increased; A parameter adjustment module is used to adjust the parameters of the heating device according to the temperature to be increased.

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