Junction Temperature Monitoring System and Junction Temperature Monitoring Method

Abstract

The present application discloses a junction temperature monitoring system and a junction temperature monitoring method, which are used to improve the measurement accuracy of the junction temperature of a power semiconductor device and realize its real-time online monitoring. The system includes a power semiconductor device, a temperature sensing element, and a data processing unit. Among them, the temperature sensing element is arranged at a target position in the electrode of the power semiconductor device. The temperature sensing element is used to obtain the temperature of the target position. The data processing unit is electrically connected to the temperature sensing element and is used to calculate the junction temperature information of the power semiconductor device according to the position information of the target position corresponding to the temperature sensing element, the temperature data obtained by the received temperature sensing element, and a preset model. The monitoring system of the present application can grasp the junction temperature of the power semiconductor device in real time, providing strong technical support for preventing thermal failure, optimizing the working state, and extending the device life.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular, to a junction temperature monitoring system and a junction temperature monitoring method for power semiconductor devices. Background Art

[0002] As a core component of power electronic systems, the reliability and performance of power semiconductor devices are directly affected by the junction temperature. Research shows that excessive junction temperature is the main cause of more than 50% of power device failures, and for every 10°C increase in ambient temperature, the probability of device failure doubles. The increase in junction temperature not only causes attenuation of thermosensitive electrical parameters such as threshold voltage, on-state voltage drop, and switching time, but also exacerbates the degradation of the thermal and electrical conductivity of electrode materials, as well as the relative friction caused by the difference in thermal expansion coefficients of internal layers. Under the combined action of these factors, the reliability of power devices is significantly reduced. Therefore, accurate monitoring and evaluation of junction temperature are crucial for the health status and life prediction of power devices.

[0003] Existing techniques for monitoring junction temperature mainly rely on infrared thermal imaging for junction temperature monitoring, where the internal junction temperature is inferred by capturing the temperature distribution on the device surface using an infrared detector. However, this method can only obtain the surface temperature, and there is a large error in the back-inference estimation of the internal chip junction temperature, especially in cases of complex heat flow paths and heat source distributions, where the accuracy is limited.

[0004] There is also a junction temperature monitoring method based on thermosensitive electrical parameters, which monitors the junction temperature during operation in real time by measuring changes in parameters such as the threshold voltage and on-resistance of the device. However, when the device carries a large current or operates at high frequencies, the linear relationship between thermosensitive electrical parameters and temperature becomes complex, seriously affecting the accuracy and reliability of junction temperature measurement. Summary of the Invention

[0005] The present application provides a junction temperature monitoring system and a junction temperature monitoring method to solve the problem in related technologies that the low accuracy and reliability of real-time detection of junction temperature lead to poor accuracy in the assessment of the state and operating conditions of power semiconductor devices.

[0006] To achieve the above object, according to one aspect of the present application, a junction temperature monitoring system is provided, including a power semiconductor device, a temperature sensing element, and a data processing unit. The temperature sensing element is disposed at a target position in the electrode of the power semiconductor device for obtaining the temperature of the target position. The data processing unit is electrically connected to the temperature sensing element and calculates the junction temperature information of the power semiconductor device according to the position information of the target position, the received temperature data, and a preset model.

[0007] Optionally, the temperature sensing element has opposite first and second ends, extending from the second end to the first end, with the first end located inside the electrode and the second end located at the edge of the electrode.

[0008] Optionally, there are multiple temperature sensing elements arranged at intervals, and the extension paths of the multiple temperature sensing elements are independently selected from one or more of a straight line, a curve, and a broken line.

[0009] Optionally, the electrode has a first surface; the extension path of the temperature sensing element has at least one path unit connected in sequence, and the extension directions of adjacent path units are different. When the extension path is a curve, the extension direction of the target path unit is the extension direction of the tangent line of the target path unit. The target path unit is any one of the path units, and each path unit independently satisfies one of the following:

[0010] The extension direction of the path unit is parallel to the first surface;

[0011] There is an included angle between the extension direction of the path unit and the first surface.

[0012] Optionally, the electrode has multiple regions with equal volumes, and the multiple temperature sensing elements are independently located in different regions.

[0013] Optionally, the electrode has multiple regions arranged in a matrix, and the first ends of the multiple temperature sensing elements are independently located in different regions.

[0014] Optionally, the power semiconductor device has a first electrode and a second electrode located on opposite sides, and the temperature sensing element is located inside the first electrode and / or the second electrode.

[0015] Optionally, the electrode has multiple accommodation holes extending inward from the surface. The temperature sensing elements are located in the accommodation holes and correspond to the accommodation holes one by one. The surface of the electrode having the target accommodation hole is the target surface, and the target accommodation hole is any one of the multiple accommodation holes. The temperature sensing element arranged in the target accommodation hole has a first end point on the side close to the bottom of the target accommodation hole. The shortest distance between the first end point and the target surface is the first spacing, and the first spacings of at least two temperature sensing elements are different.

[0016] Optionally, the temperature sensing element includes any one or more of a thermocouple, a thermal resistor, a thermistor, and a diode thermometer.

[0017] On the other hand, the present application provides a junction temperature monitoring method, which is applied to the data processing unit in the above-mentioned junction temperature monitoring system. The junction temperature monitoring method includes: obtaining the temperature information provided by the temperature sensing element in the junction temperature monitoring system and the position information of the target position, where the target position is the position where the temperature sensing element is located in the electrode of the power semiconductor device in the junction temperature monitoring system; and outputting the junction temperature information of the power semiconductor device according to the temperature information, position information, and preset model of the power semiconductor device.

[0018] The junction temperature monitoring system proposed in this application aims to achieve high-precision and real-time monitoring of the junction temperature by directly embedding a temperature-sensing element in the electrode of a power semiconductor device, combined with a data processing unit and a preset heat conduction model, thereby improving the accuracy of device status monitoring and operating condition assessment. Among them, the change in the junction temperature of the device directly reflects the temperature state inside the electrode, and the electrode is one of the main paths for heat accumulation and diffusion in the power device. Setting the temperature-sensing element directly inside the electrode of the power semiconductor device in this application can more accurately capture the real change in the junction temperature, avoiding the errors of surface temperature measurement and indirect temperature measurement methods, especially under the conditions of high current or high power density of the device; the temperature-sensing element can respond to temperature changes in real time. When the device is operating, the temperature change signal inside the electrode is instantaneously converted into an electrical signal by the temperature-sensing element, and these signals are transmitted to the data processing unit through electrical connections; the data processing unit receives the temperature data and position information from the temperature-sensing element, combines the preset model, and performs data processing and junction temperature calculation in real time, so as to calculate the internal heat distribution of the device, and then inversely deduce the junction temperature information. The data processing unit can complete the analysis and calculation of a large amount of data in a very short time, ensuring the real-time and accuracy of the junction temperature information, enabling the system to respond instantaneously to changes in the device operating conditions, providing real-time monitoring results, and solving the problems of low accuracy and reliability of real-time detection of junction temperature in the related technology, resulting in poor accuracy of the state and operating condition assessment of power semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings described herein are used to provide a further understanding of the present invention, form a part of this application, and the schematic embodiments of the present invention and their descriptions are used to explain the present invention, and do not constitute an improper limitation to the present invention. In the drawings:

[0020] Figure 1 is a schematic structural diagram of a junction temperature monitoring system provided in an embodiment of the present application;

[0021] Figure 2 is a partial structural diagram of an electrode in a power semiconductor device provided in an embodiment of the present application;

[0022] Figure 3 is a cross-sectional structural diagram of a power semiconductor device provided in an embodiment of the present application;

[0023] Figure 4 is a layout diagram of a temperature-sensing element in an electrode provided in an embodiment of the present application;

[0024] Figure 5 is another layout diagram of a temperature-sensing element in an electrode provided in an embodiment of the present application;

[0025] Figure 6It is a schematic layout diagram of another temperature sensing element in the electrode provided in the embodiment of the present application;

[0026] Figure 7 It is a schematic diagram of a hybrid layout of a temperature sensing element in the electrode provided in the embodiment of the present application;

[0027] Figure 8 It is a schematic diagram of another hybrid layout of a temperature sensing element in the electrode provided in the embodiment of the present application;

[0028] Figure 9 It is a schematic diagram of the division of an electrode region provided in the embodiment of the present application;

[0029] Figure 10 It is a schematic diagram of another division of the electrode region provided in the embodiment of the present application;

[0030] Figure 11 It is a schematic diagram of the structure of a receiving hole in the electrode provided in the embodiment of the present application;

[0031] Figure 12 It shows a hardware structure block diagram of a mobile terminal for implementing a junction temperature monitoring method provided in the embodiment of the present application;

[0032] Figure 13 It is a flowchart of the junction temperature monitoring method according to the embodiment of the present application.

[0033] Among them, the above-mentioned drawings include the following reference numerals:

[0034] 10, power semiconductor device; 101, power semiconductor chip; 11, electrode; 1101, first electrode; 1102, second electrode; 110, first surface; 111, receiving hole; 1110, target surface; 20, temperature sensing element; 21, first end; 22, second end; 30, data processing unit; 102, processor; 104, memory; 106, transmission device; 108, input / output device. Detailed implementation manners

[0035] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0036] It should be noted that, unless otherwise specified, all technical and scientific terms used in this application have the same meanings as those commonly understood by those of ordinary skill in the technical field to which this application belongs.

[0037] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present invention described here can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0038] As introduced in the background art, accurately monitoring and evaluating the junction temperature is crucial for the health status and life prediction of power devices. Existing technologies for monitoring the junction temperature have large errors in the back-calculation and estimation of the internal chip junction temperature. Especially in the case of complex heat flow paths and heat source distributions, the accuracy is limited. When the device carries a large current or high-frequency switching operations, the linear relationship between the thermosensitive electrical parameters and the temperature becomes complex, seriously affecting the accuracy and reliability of the junction temperature measurement. Therefore, in order to solve the problems of low accuracy and reliability in the real-time detection of the junction temperature in the related technologies and poor accuracy in the state and working condition evaluation of power semiconductor devices, the present application provides a junction temperature monitoring system and a junction temperature monitoring method.

[0039] According to an embodiment of the present application, there is provided a junction temperature monitoring system, as Figure 1 and Figure 3 shown, which includes a power semiconductor device 10, a temperature sensing element 20, and a data processing unit 30, wherein: the temperature sensing element 20 is disposed at a target position in the electrode 11 of the power semiconductor device 10 for acquiring the temperature of the target position; the data processing unit 30 is electrically connected to the temperature sensing element 20 and calculates the junction temperature information of the power semiconductor device 10 according to the position information of the target position, the received temperature data, and a preset model.

[0040] Wherein, as Figure 3 shown, the electrode 11 includes a first electrode 1101 and a second electrode 1102, and a power semiconductor chip 101 is further disposed between the first electrode 1101 and the second electrode 1102. The above-mentioned power semiconductor device 10 is encapsulated by a component including the first electrode 1101, the second electrode 1102, and the power semiconductor chip 101, and a plurality of power semiconductor units are formed in the power semiconductor chip 101.

[0041] By directly measuring the temperature inside the electrode, this system can more accurately reflect the thermal stress distribution inside the power semiconductor device 10, which is of great significance for optimizing device design, improving device life and reliability.

[0042] In this embodiment, as Figure 3 shown, the temperature sensing element 20 is directly embedded inside the electrode 11 of the power semiconductor device 10. Compared with the surface temperature measurement and the indirect temperature measurement method based on the change of electrical parameters, the direct contact temperature measurement can capture the real temperature inside the electrode 11, avoiding the inconsistency between the surface and the inside, or between the change of electrical parameters and the temperature, and reducing the measurement error. At the same time, the temperature sensing element 20, such as a thermal resistor, a thermocouple, etc., has the characteristics of fast response and high stability, and can immediately feedback the temperature change to realize real-time monitoring. The data processing unit 30 receives the temperature information transmitted from the temperature sensing element 20 and performs data processing and calculation in combination with the preset model.

[0043] This embodiment effectively improves the accuracy of junction temperature monitoring by directly collecting the temperature inside the electrode and using the preset model for precise calculation, overcoming the defects of traditional methods. At the same time, the real-time data collection and processing capabilities enable the system to immediately respond to the changes in the device operating state, provide accurate junction temperature information, and provide a solid foundation for device state monitoring and working condition assessment. This is of great value for preventing thermal failure, optimizing the device working state, extending the device life, etc.

[0044] Exemplarily, the preset model in the data processing unit is a heat conduction model. This model is based on Fourier's law of heat conduction and the heat conduction differential equation, and synthesizes information such as the geometric structure of the device, the thermal physical property parameters of the material, and the heat source distribution, etc., and can accurately reflect the temperature distribution inside the electrode. By comparing the real-time temperature data with the model, the data processing unit 30 can quickly deduce the junction temperature information of the power semiconductor device, ensuring the real-time and accuracy of the monitoring.

[0045] In some optional embodiments, as Figure 2 shown, the temperature sensing element 20 has opposite first end 21 and second end 22. Extending from the second end 22 to the first end 21, the first end 21 is located inside the electrode 11, and the second end 22 is located at the edge of the electrode 11. This embodiment optimizes the thermal management of the power device, prevents thermal failure, and extends the service life of the device.

[0046] Specifically, the sensing module of the temperature sensing element 20 is located in the first end portion 21. Placing the first end portion 21 of the temperature sensing element 20 inside the electrode 11 means that the sensing module is closer to the heat source, i.e., the junction region of the power device. This direct contact temperature measurement can reduce the temperature difference loss in the heat conduction path and provide temperature data closer to the true junction temperature. Since the junction temperature is a key parameter affecting the performance and lifespan of the power device, directly measuring the temperature inside the electrode 11 can significantly improve the accuracy of condition monitoring and operating condition assessment. Among them, the second end portion 22 is located at the edge of the electrode 11. The second end portion 22 can be located inside the electrode 11 or coincide with the edge of the electrode 11, or can protrude from the electrode 11. In this way, it is more convenient for the second end portion 22 to be connected to the external circuit or the data processing unit, and the electrical signal of the sensing module can be directly transmitted to the data processing unit through the second end portion 22, avoiding the noise interference and signal attenuation problems that may be introduced by long-distance signal transmission. The stable connection of the sensing module inside the electrode 11 and the direct connection of the external circuit not only improve the accuracy of temperature measurement but also enhance the real-time monitoring ability of the system. Even when the device is subjected to high current or high-frequency switching operations, it can ensure the continuity and accuracy of the data, thereby optimizing the thermal management of the power device, preventing thermal failure, accurately monitoring the junction temperature, and extending the service life of the device.

[0047] In some alternative embodiments, such as Figures 4 to 8As shown, there are multiple temperature sensing elements 20 arranged at intervals. The extension paths of the multiple temperature sensing elements 20 are independently selected from one or more of a straight line, a curve, and a broken line. The temperature sensing elements 20 are not only arranged inside the electrode 11 of the power semiconductor device 10, but also adopt a layout strategy of multi-point interval distribution and direction diversity to achieve high-precision real-time monitoring of the junction temperature, thereby improving the accuracy of device status monitoring and operating condition assessment. Among them, the multi-point interval distribution design enables the temperature sensing elements 20 to be distributed at different positions inside the electrode 11, capturing more comprehensive temperature information. During the operation of the device, the temperature distribution inside the electrode 11 is not uniform. Especially under high power density operating conditions, the temperature near the heat source may be significantly higher than other areas. By setting the temperature sensing elements 20 at multiple key positions, the system can monitor these temperature changes in real time, providing multi-point temperature data, enabling the data processing unit to accurately calculate the junction temperature based on richer information. This multi-point monitoring strategy enhances the sensitivity and response speed of the system to temperature anomalies, thus achieving more accurate junction temperature assessment. The diversity of the extension paths of the temperature sensing elements 20 further improves the flexibility and coverage of monitoring, and can more accurately reflect the heat conduction path and temperature distribution characteristics inside the electrode 11. Especially in the case of a complex device structure and uneven heat source distribution, the temperature sensing elements 20 with diverse paths can capture more detailed temperature gradients, contributing to the construction of a more accurate heat conduction model, thereby improving the accuracy of junction temperature calculation, providing more reliable data support for operating condition assessment, ensuring the efficient operation of the power device within a safe temperature range, and effectively extending the service life of the device.

[0048] Specifically, by setting multiple temperature sensing elements at different positions inside the electrode, the data processing unit can construct a temperature distribution map, which helps to more comprehensively understand the thermal state inside the power device. In the data processing unit, this intuitive multi-point temperature monitoring can effectively observe the phenomenon of local overheating, thereby ensuring the stable operation of the system.

[0049] In some alternative embodiments, the extension path of the temperature sensing element has at least one path unit connected in sequence, and the extension directions of adjacent path units are different. When the extension path is a curve, the extension direction of the target path unit is the extension direction of the tangent of the target path unit, and the target path unit is any one of the path units. Each path unit independently satisfies one of the following: the extension direction of the path unit is parallel to the first surface; the extension direction of the path unit has an included angle with the first surface. The temperature sensing element adopts a diversified setting of extension path units and corresponding extension directions, which can construct a more refined and flexible temperature monitoring network inside the power device, effectively improving the accuracy and feasibility of junction temperature detection, and further enhancing the accuracy of device status monitoring and operating condition assessment.

[0050] Specifically, there is only a unique extension direction in one path unit.

[0051] In some alternative embodiments, such as Figure 4 shown (in the case where the extension path is a straight line), wherein Figure 4 (a) shows the electrode structure in the x-y coordinate system, Figure 4 (b) shows the electrode structure in the x-z coordinate system. The electrode 11 has a first surface 110, and the extension direction of at least one temperature sensing element 20 is parallel to the first surface 110. At least one temperature sensing element 20 extends parallel to the first surface 110 of the electrode 11, ensuring that temperature changes in the plane direction of the electrode 11 can be accurately captured, and this direction is usually closely related to the heat source distribution and heat conduction path.

[0052] Exemplarily, as Figure 4 shown, Figure 4 shows a layout scheme of the temperature sensing element 20, that is, a layout in which the extension directions of multiple temperature sensing elements 20 are parallel to the first surface 110 of the electrode 11, realizing high-precision real-time junction temperature monitoring.

[0053] In the above example, as Figure 4 shown, on the side wall surface of the electrode 11, multiple different heights and positions are selected, and holes are drilled along the radial direction (i.e., the direction parallel to the first surface 110 of the electrode 11) to a specified depth. The positions, quantities, and depths of these holes are flexibly set according to the thermal characteristics and monitoring requirements of the device, aiming to cover the key thermal areas inside the electrode 11. Subsequently, a temperature sensing element 20 such as a calibrated thermal resistor is embedded in each hole, ensuring that the first end (i.e., the sensing module) of the temperature sensing element 20 can directly contact the inside of the electrode 11 for accurate temperature measurement. This layout not only simplifies the processing technology but also improves the installation accuracy of the temperature sensing element 20, facilitating the maintenance of its long-term stability and reliability. During device operation, the sensing module of the temperature sensing element 20 embedded in the side wall surface of the electrode 11 continuously detects the local temperature of the area where it is located to obtain real-time temperature data.

[0054] In some alternative embodiments, such as Figures 5 to 6 shown (in the case where the extension path is a straight line), wherein Figure 5 (a) and Figure 6 (a) respectively show the electrode structure in the x-y coordinate system, Figure 5 (b) and Figure 6 (b) respectively show the electrode structure in the x-z coordinate system. The electrode 11 has a first surface 110, and there is an included angle between the extension direction of at least one temperature sensing element 20 and the first surface 110. When at least one temperature sensing element 20 extends at an included angle with the first surface 110, the temperature gradient in the depth direction of the electrode 11 can be monitored, and this three-dimensional monitoring strategy helps to construct a more comprehensive heat conduction model.

[0055] Exemplarily, asFigure 5 As shown Figure 5 Another layout scheme of the temperature sensing element 20 is shown, that is, the extension directions of multiple temperature sensing elements 20 are perpendicular to the first surface 110 of the electrode 11, realizing high-precision real-time junction temperature monitoring.

[0056] In the above example, as Figure 5 shown, on the bottom surface of the electrode 11 (i.e., the first surface 110 and the surface opposite to the first surface 110), multiple different positions are selected, and holes are drilled in the direction perpendicular to the first surface 110 until a preset depth is reached. The positions, quantities, and depths of these holes are set according to the thermal characteristics and monitoring requirements of the device to cover the key areas on the internal heat conduction path of the electrode 11, which are not specifically limited in this application. Subsequently, calibrated thermal resistors (or other types of temperature sensing elements 20) are embedded in each hole to ensure that the first end (i.e., the sensing module part) of the temperature sensing element 20 can be in direct contact with the electrode 11 for accurate temperature measurement. When the device is operating, the sensing module of the temperature sensing element 20 embedded in the side wall surface of the electrode 11 continuously detects the local temperature of the area where it is located to obtain real-time temperature data. The setting of the vertical extension direction enables the thermal resistor to quickly respond to temperature fluctuations, reduces the response time and measurement delay, and ensures the real-time nature and reliability of the data.

[0057] In another example, as Figure 6 shown Figure 6 Another layout scheme of the temperature sensing element 20 is shown, that is, the extension directions of multiple temperature sensing elements 20 form an acute angle or an obtuse angle with the first surface 110 of the electrode 11. By optimizing the arrangement of the temperature sensing element 20, the accuracy and reliability of junction temperature monitoring can be improved.

[0058] In the above example, as Figure 6As shown, on the surface of the electrode 11 (i.e., the first surface 110, the surface opposite to the first surface 110, and the side wall surface), multiple different positions are selected, and holes are drilled from these positions in an oblique direction (i.e., a direction forming a preset angle with the first surface 110) to different depths. The positions, quantities, and depths of the drilled holes are adjusted according to the thermal characteristics of the device, the internal heat flow path, and the monitoring requirements to ensure that the key nodes of the internal heat conduction of the electrode 11 can be effectively monitored. This application does not make specific limitations. Subsequently, a calibrated thermal resistor or other temperature-sensing elements 20 are embedded in each oblique hole, ensuring that the first end (i.e., the sensing module part) of the temperature-sensing element 20 is in close contact with the electrode 11 material for high-precision temperature measurement. When the device is operating, the sensing module of the temperature-sensing element 20 embedded in the side wall surface of the electrode 11 continuously detects the local temperature of the area where it is located to obtain real-time temperature data. This oblique hole layout can more flexibly cover the complex internal heat distribution area of the device. Especially in areas with complex heat flow and large temperature gradients, the oblique arrangement of the temperature-sensing element 20 can effectively capture temperature gradient information, improving the sensitivity and accuracy of temperature monitoring. By adjusting the angle and depth, the sensing module of the temperature-sensing element 20 can be closer to the heat source more precisely, reducing signal attenuation and delay during the heat conduction process.

[0059] In some alternative embodiments, as Figure 7 shown (in the case where the extension path is a straight line), where Figure 7 (a) shows the electrode structure in the x-y coordinate system, Figure 7 (b) shows the electrode structure in the x-z coordinate system. The electrode 11 has a first surface 110; the extension direction of at least one temperature-sensing element 20 is parallel to the first surface 110, and there is an angle between the extension direction of at least one temperature-sensing element 20 and the first surface 110. This hybrid layout method combines the advantages of simple process and internal depth detection, improving the accuracy of device status monitoring and working condition assessment.

[0060] Exemplarily, as Figure 7 shown, Figure 7 shows another layout scheme of the temperature-sensing element 20, that is, the layout where the extension direction of at least one temperature-sensing element 20 is parallel to the first surface 110 of the electrode 11 and there is an angle between the extension direction of at least one temperature-sensing element 20 and the first surface 110, realizing the comprehensive monitoring of the internal temperature of the power device.

[0061] In the above example, as Figure 7As shown in the figure, on the side wall surface of the electrode 11, multiple different positions are selected, and holes are drilled to different depths along the radial direction (i.e., the direction parallel to the first surface 110) and the oblique direction (i.e., the direction forming an angle with the first surface 110) respectively. The positions, quantities, and depths of these holes are set according to the thermal characteristics of the device and the monitoring requirements, and it is only necessary to cover the key thermal areas inside the electrode 11, and the present application does not make specific limitations. In each hole, a temperature-sensing element 20 such as a calibrated thermal resistor is embedded, ensuring that the first end (i.e., the sensing module) of the temperature-sensing element 20 can be in direct contact with the electrode 11 for high-precision temperature measurement. When the device is operating, the horizontally and obliquely embedded temperature-sensing elements 20 cooperate to comprehensively monitor the key thermal areas of the electrode 11 and obtain real-time temperature data. At least one temperature-sensing element 20 is embedded in the electrode 11 in an obliquely drilled hole, and its extending direction forms a certain angle with the first surface 110. This oblique layout enables the sensing module of the temperature-sensing element 20 to more deeply detect the thermal environment inside the electrode 11, especially the area close to the heat source. At least one temperature-sensing element 20 is horizontally embedded along the surface direction to ensure direct and continuous monitoring of the temperature of the electrode 11 and reduce the process difficulty. This hybrid layout method simplifies the processing technology while more comprehensively reflecting the thermal environment of the power device, improves the accuracy of junction temperature detection, and is beneficial to maintaining the long-term stability and reliability of the device.

[0062] In another example, as Figure 8 shown, in the above embodiment, the positions of the drilled holes can also be selected on the bottom surface of the electrode 11 (i.e., the first surface and the surface opposite to the first surface). First, the electrode 11 is drilled to a certain depth along the direction perpendicular to the first surface, and then drilled to different depths along the radial direction (i.e., the direction parallel to the first surface) and the oblique direction (i.e., the direction forming an angle with the first surface), and a temperature-sensing element 20 such as a calibrated thermal resistor is embedded in each hole.

[0063] In another example, as Figure 8 shown, in the above embodiment, the drilling path can also be selected as a curved path. On the surface of the electrode 11 (i.e., the first surface, the surface opposite to the first surface, and the side wall surface), multiple different positions are selected, and from these positions, the electrode 11 is drilled to different depths along the curve to a certain depth. At the end point where the drilling stops, the tangent of the curve is along the radial direction (i.e., the direction parallel to the first surface) and the oblique direction (i.e., the direction forming an angle with the first surface). The extending direction of the curve refers to the arrow direction in the figure, and a temperature-sensing element 20 such as a calibrated thermal resistor is embedded in each hole.

[0064] Specifically, the extending path in the embodiment of the present application can also be selected from multiple types including straight lines, curves, and broken lines (not shown in the figure), and those skilled in the art can select according to specific needs, and the present embodiment does not make specific limitations.

[0065] In some optional embodiments, such as Figure 9 As shown (the extension direction of the temperature sensing element is at a certain angle to the first surface), the electrode 11 has multiple regions of equal volume, and each temperature sensing element 20 is independently located in different regions. By dividing the electrode 11 into multiple regions of equal volume, a uniform temperature measurement grid can be formed inside the electrode 11 to ensure the comprehensiveness and balance of temperature monitoring. The temperature sensing element 20 in each region works independently, and can accurately capture the temperature changes in the region, avoiding the influence of local temperature deviation caused by single-point temperature measurement on the overall evaluation. This multi-point independent monitoring method can construct a temperature distribution map inside the electrode 11, providing rich and accurate temperature data for reverse junction temperature. During the operation of the device, each independent temperature sensing element 20 continuously detects the temperature of the region, and these data are then input into the data processing unit. Based on the thermal conductivity model of the device, the data processing unit can use the temperature information of multiple regions to quickly calculate the chip junction temperature through an iterative algorithm. Since the data of each temperature sensing element 20 is collected independently, this real-time monitoring can instantly reflect the temperature changes inside the power device, and is more sensitive to the judgment of high temperature anomalies or heat source locations, thereby improving the accuracy of junction temperature evaluation.

[0066] In addition, the independent temperature sensing element layout also improves the reliability of the system. The failure of a single temperature sensing element will not affect the overall monitoring effect, and other temperature sensing elements can still provide necessary temperature data to ensure the continuity and stability of junction temperature monitoring. This is especially critical for devices such as power devices that are extremely sensitive to temperature, and can effectively prevent the risk of performance degradation or failure caused by excessive junction temperature.

[0067] For example, Figure 9 A schematic diagram of the division of the electrode area is shown in FIG. Figure 9 As shown, the electrode is divided into four regions of equal volume, and four temperature sensing elements 20 are embedded in the four regions correspondingly at inclined angles, that is, the extension direction of each temperature sensing element 20 has an acute angle or an obtuse angle with the first surface of the electrode 11 .

[0068] In some optional embodiments, such as Figure 10 As shown in FIG. 1 (the extension direction of the temperature sensing element is perpendicular to the first surface), the multiple areas divided in the electrode 11 can also be arranged in a matrix, and the first ends 21 of the multiple temperature sensing elements are independently located in different areas. The layout of the temperature sensing elements arranged in a matrix can form a two-dimensional or three-dimensional temperature monitoring network, which is conducive to analyzing the thermal behavior of the power device under complex working conditions.

[0069] In the above optional implementation, if Figure 10As shown, the electrode 11 is divided into a plurality of regions with equal volumes arranged in a matrix, and the first end portions 21 of each temperature sensing element are independently positioned in these different regions. This layout strategy is conducive to achieving high-precision and real-time monitoring of the junction temperature of the power device. Among them, the regional division arranged in a matrix is like constructing a regular and evenly distributed temperature monitoring network inside the electrode 11. Each region is independent and does not interfere with each other, ensuring the comprehensiveness and accuracy of temperature monitoring. This layout enables the sensing module of the temperature sensing element to evenly cover the key heat areas inside the electrode 11, not only capable of detecting local hot spots, but also capturing subtle changes in temperature, providing more accurate and rich data support for junction temperature calculation.

[0070] Exemplarily, Figure 10 Another schematic diagram of the division of the electrode region is shown in Figure 10 As shown, the electrode 11 is divided into a plurality of regions arranged in a matrix, and the first end portion 21 of each temperature sensing element is vertically embedded in different regions, that is, the extending direction of the temperature sensing element is perpendicular to the first surface of the electrode 11.

[0071] In some alternative embodiments, as Figure 3 shown, the power semiconductor device has a first electrode 1101 and a second electrode 1102 located on opposite sides, and the temperature sensing element is located inside the first electrode 1101 and / or the second electrode 1102. This embodiment can simultaneously monitor the temperature states of the two electrodes, or can also only detect the temperature state of one electrode, with a wider coverage for temperature detection and being more sensitive to the judgment of high-temperature anomalies or the location of heat sources, thereby improving the accuracy of junction temperature assessment.

[0072] In some alternative embodiments, as Figure 11As shown, the electrode 11 has a plurality of receiving holes 111 extending inward from the surface. The temperature sensing elements 20 are located within the receiving holes 111 and correspond to the receiving holes 111 one by one. The surface of the electrode 11 having the target receiving hole is the target surface 1110, and the target receiving hole is any one of the plurality of receiving holes 111. The temperature sensing element 20 disposed in the target receiving hole has a first end at one end near the bottom of the target receiving hole. The shortest distance between the first end and the target surface is the first spacing L, and the first spacings L of at least two temperature sensing elements 20 are different. Only one temperature sensing element 20 inside one receiving hole 111 is exemplarily shown in the figure. To clearly show the receiving hole 111, the temperature sensing elements 20 in other receiving holes 111 are not shown. Among them, the first spacing L shown for the receiving hole 111 without the temperature sensing element 20 shown refers to the first spacing L when the temperature sensing element 20 is in contact with the hole bottom in the case where the temperature sensing element 20 is provided. By providing receiving holes 111 with different depths in the electrode 11 and embedding the temperature sensing elements 20, a hierarchical temperature monitoring network is constructed. Each temperature sensing element 20 can independently detect the temperature at its corresponding depth. Due to the difference in depth, the temperature sensing element 20 can capture the temperature changes in different thermal layers inside the electrode 11. This multi-depth temperature data provides more comprehensive information for back-calculating the junction temperature. Compared with single-depth temperature measurement, multi-level temperature monitoring can more precisely reflect the temperature distribution inside the electrode 11, reduce the measurement error caused by uneven heat conduction, and significantly improve the accuracy of junction temperature measurement.

[0073] In addition, as Figure 11 shown, since the first spacings L of the respective temperature sensing elements 20 are different, that is, their positions inside the electrode 11 are different, the calculation results of the junction temperature can be verified and corrected from multiple angles, enhancing the reliability of the system. Even if an individual temperature sensing element 20 fails, the data of the temperature sensing elements 20 at other depths can still be used as a reference to ensure the stability of the junction temperature evaluation.

[0074] In some alternative embodiments, the temperature sensing element includes any one or more of a thermocouple, a thermal resistor, a thermistor, and a diode thermometer. By selecting or combining these three temperature sensing elements, a temperature monitoring system with complementary performance can be constructed.

[0075] Specifically, in this embodiment, a thermal resistor is used as the temperature sensing element, which has a stable temperature coefficient and provides high-precision temperature measurement. Due to its high measurement accuracy, it can capture subtle temperature fluctuations, which is crucial for evaluating the thermal stress distribution inside the device, especially for the precise monitoring of the junction temperature.

[0076] In the embodiment of the present application, the data processing unit calculates the junction temperature information of the power semiconductor device according to the position information of the target position corresponding to the temperature sensing element, the temperature data obtained by the received temperature sensing element, and a preset model.

[0077] Specifically, the input of the above preset model is the temperature data measured by the temperature sensing element and the position information of the target position (such as spatial position coordinates), and the output is the chip junction temperature. Moreover, the heat conduction model in the above preset model is obtained based on Fourier's law of heat conduction (1) and the heat conduction differential equation formula (2), combined with the structural size parameters of the specific device, the thermophysical parameters of the materials that make it up and the operating condition parameters of the chip to obtain the specific , so as to obtain the preset model formula (3) to output the chip junction temperature.

[0078]

[0079]

[0080]

[0081] In the above formulas, represents the heat flux density, represents the thermal conductivity, represents the spatial temperature gradient, represents the temperature, represents the time, represents the density, represents the specific heat capacity, represents the internal heat generation power of the system; represents the chip junction temperature, represents the spatial position coordinates where the junction temperature is located, represents the spatial position coordinates and temperature detected by the sensing module of the nth temperature sensing element.

[0082] Exemplarily, the data processing unit includes:

[0083] A receiving module for obtaining the position information of the target position corresponding to the temperature sensing element and the temperature data obtained by the received temperature sensing element;

[0084] A preset model for calculating the junction temperature information of the power semiconductor device;

[0085] A response time monitoring module: regularly sends a test pulse signal to the sensor in the target temperature sensing element, records the time from when the sensor receives the pulse signal to when it returns the temperature data, and calculates the response time corresponding to the target temperature sensing element;

[0086] An accuracy verification module: determines the measurement accuracy of the sensor corresponding to multiple preset temperatures according to the temperature data of the sensor and the data of multiple preset temperatures;

[0087] Data processing module: Stores the response time and measurement accuracy corresponding to the sensor, and generates a change curve of the target performance within a historical time period. The target performance includes the above-mentioned response time and the above-mentioned measurement accuracy.

[0088] Through the response time monitoring module, obtain the response time corresponding to the target temperature sensing element, and evaluate the response speed of the sensor based on this. If it is detected that the response time exceeds the preset threshold, it is determined that the sensor is aging or disconnected. Through the accuracy verification module, regularly calibrate the sensor in a standard environment at different preset temperatures, or use multiple sensors to cross-check each other in an environment at a preset temperature. Once the accuracy of the temperature drops by more than the set threshold, the data processing unit will mark the data of the sensor as untrustworthy. Through the data processing module, store the response time and measurement accuracy corresponding to the sensor, and generate a change curve of the above performance within a historical time period. This change curve is used to characterize the performance of the sensor in the temperature sensing element, analyze the aging trend of the sensor, predict its remaining service life. In addition, this change curve will also display the preset temperature corresponding to the measurement accuracy performance.

[0089] The above embodiments ensure that the sensor is in a good working state, timely detect and warn of potential aging or faults, reduce the distortion of monitoring data caused by sensor problems, ensure the accuracy of the sensor measurement results, maintain high data credibility even under complex working conditions, and improve the reliability of the junction temperature analysis and fault diagnosis of power devices.

[0090] According to an embodiment of the present application, there is also provided a junction temperature monitoring method running on a mobile terminal, a computer terminal, or a similar computing device.

[0091] Taking the operation on a mobile terminal as an example, Figure 12 is a hardware structure block diagram of a mobile terminal of a junction temperature monitoring method according to an embodiment of the present invention. As Figure 12 shown, the data processing unit may include one or more ( Figure 12 only one is shown in the figure) processors 102 (the processor 102 may include, but is not limited to, a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data. Among them, the above-mentioned mobile terminal may further include a transmission device 106 for communication functions and an input / output device 108. Those of ordinary skill in the art can understand that Figure 12 the structure shown is only schematic and does not limit the structure of the above-mentioned mobile terminal. For example, the mobile terminal may further include more or fewer components than Figure 12 shown in the figure, or have a different configuration from Figure 12 shown in the figure.

[0092] The memory 104 can be used to store computer programs, for example, software programs and modules of application software, such as the computer program corresponding to the junction temperature monitoring method in the embodiments of the present invention. The processor 102 executes various functional applications and data processing by running the computer programs stored in the memory 104, that is, implements the above-mentioned method. The memory 104 can include high-speed random access memory, and can also include non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memories. In some instances, the memory 104 can further include a memory remotely disposed relative to the processor 102, and these remote memories can be connected to the mobile terminal through a network. Examples of the above-mentioned network include but are not limited to the Internet, enterprise intranet, local area network, mobile communication network, and combinations thereof. The transmission device 106 is used to receive or send data via a network. Specific examples of the above-mentioned network can include the wireless network provided by the communication provider of the mobile terminal. In one instance, the transmission device 106 includes a network adapter (Network Interface Controller, abbreviated as NIC), which can be connected to other network devices through a base station and thus can communicate with the Internet. In one instance, the transmission device 106 can be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0093] Figure 13 is a flowchart of the junction temperature monitoring method according to the embodiments of the present application. As Figure 13 shown, applied to the data processing unit in the above-mentioned junction temperature monitoring system, the junction temperature monitoring method includes:

[0094] S01. Obtain the temperature information provided by the temperature sensing element in the junction temperature monitoring system and the position information of the target position, where the target position is the position where the temperature sensing element is located in the electrode of the power semiconductor device in the junction temperature monitoring system.

[0095] In step S01, the temperature sensing element (such as a thermal resistor) continuously monitors the temperature inside the electrode and provides accurate temperature information to the data processing unit. At the same time, the data processing unit records its specific position in the electrode - the target position. Since the temperature sensing element is directly embedded in the electrode and is close to the heat source of the chip junction area, it can reduce the delay and distortion in heat conduction, ensure the high precision and immediacy of temperature data, and provide a key basis for subsequent junction temperature calculation.

[0096] S02. Generate the junction temperature information of the power semiconductor device according to the temperature information, position information, and preset model.

[0097] In step S02, the data processing unit processes the temperature and position information obtained in step S01 in combination with a preset model. The preset model comprehensively considers the geometric structure of the device, the thermal physical property parameters of the material, and the heat source distribution. Taking the temperature data of the detection point and the position corresponding to the detection point as inputs, through solving the heat conduction equation, it iteratively calculates the real-time value of the chip junction temperature. The precise setting of the preset model reduces the calculation error and ensures the high precision of the junction temperature evaluation. The real-time performance is reflected in that the model can continuously receive and process the latest temperature and position data, instantaneously update the junction temperature information, and realize the dynamic monitoring of the internal thermal state of the device.

[0098] Through the synergistic effect of the above steps, the junction temperature monitoring method of the present application can continuously and accurately output the junction temperature information of the power semiconductor device, realizing the high-precision and real-time monitoring of the junction temperature of the power device, ensuring that accurate junction temperature data can be obtained under various working conditions, thereby improving the accuracy of device state monitoring and working condition evaluation.

[0099] In addition, the junction temperature monitoring method of the present application can also be combined with the control strategy of the power semiconductor device to realize dynamic thermal management. For example, when it is detected that the junction temperature rises, the system can automatically adjust the working parameters of the device, such as reducing the current or power, to reduce heat generation; or start the heat dissipation system, such as a fan, liquid cooling, etc., to accelerate the heat dissipation. This dynamic thermal management strategy can effectively extend the service life of the device and improve the overall performance of the system. At the same time, the method of the present application not only includes the monitoring of the current junction temperature, but also can predict the change trend of the future junction temperature based on historical data and models, providing key information for the health state diagnosis, life prediction and performance optimization of the device. Furthermore, through long-term data collection and analysis, the preset model can be further optimized to improve the accuracy and reliability of junction temperature monitoring.

[0100] Exemplarily, the input of the above preset model is the temperature data measured by the temperature sensing element and the spatial position coordinates of the target position, and the output is the chip junction temperature. Among them, formula (3) of the preset model is obtained based on Fourier's law of heat conduction (1) and the heat conduction differential equation formula (2). In formula (3), represents the generalized function, and its actual function form is determined by the structural dimension parameters of the specific device, the thermal physical property parameters of the material and the working condition parameters of the chip decided.

[0101]

[0102]

[0103]

[0104] In the above formulas, represents the heat flux density, represents the thermal conductivity represents the spatial temperature gradient represents the temperature represents the time represents the density represents the specific heat capacity represents the internal heat generation power of the system represents the chip junction temperature represents the spatial position coordinates where the junction temperature is located represents the spatial position coordinates and temperature detected by the sensing module of the nth temperature sensing element

[0105] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0106] The junction temperature monitoring system of the present application directly embeds high-precision temperature sensing elements inside the electrodes, directly and accurately obtains the temperature data inside the electrodes, and then combines a preset model and a real-time and efficient data processing unit to calculate and output the junction temperature information of the power semiconductor device in real time, thereby achieving accurate and real-time monitoring of the junction temperature of the power semiconductor device, significantly improving the accuracy of device status monitoring and working condition evaluation, and solving the problem that the accuracy and reliability of real-time detection of the junction temperature in the related art are low, resulting in poor accuracy of the state and working condition evaluation of the power semiconductor device

[0107] Obviously, those skilled in the art should understand that the above modules or steps of the present invention can be implemented by a general-purpose computing device. They can be concentrated on a single computing device or distributed on a network composed of multiple computing devices. They can be implemented by program codes executable by the computing device. Thus, they can be stored in a storage device and executed by the computing device. And in some cases, the steps shown or described can be executed in a different order from here, or they can be separately made into individual integrated circuit modules, or multiple modules or steps among them can be made into a single integrated circuit module to implement. In this way, the present invention is not limited to any specific combination of hardware and software

[0108] It should also be noted that the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, commodity or device. Without further limitation, the element defined by the statement "including one..." does not exclude the existence of another identical element in the process, method, commodity or device including the element

[0109] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modifications, equivalent replacements, improvements, etc. made within the principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A junction temperature monitoring system, characterized in that: It includes power semiconductor devices, temperature sensing elements and data processing units, wherein: The temperature sensing element is arranged at a target position in the electrode of the power semiconductor device, and the temperature sensing element is used to obtain the temperature of the target position. The temperature sensing element is a plurality of elements arranged at intervals. A data processing unit is electrically connected to the temperature sensing element, and is used to calculate the junction temperature information of the power semiconductor device according to the position information of the target position corresponding to the temperature sensing element, the received temperature data obtained by the temperature sensing element, and a preset model, wherein the preset model is: ， in, Indicates the chip junction temperature, Indicates the spatial coordinates of the junction temperature, Represents the spatial position coordinates and temperature detected by the sensor module of the nth temperature sensing element, represents the internal heating power of the electrode system, Indicates time.

2. The junction temperature monitoring system according to claim 1, characterized in that: The temperature sensing element has a first end and a second end opposite to each other. The temperature sensing element extends from the second end to the first end. The first end is located inside the electrode, and the second end is located inside the electrode.

3. The junction temperature monitoring system according to claim 2, characterized in that: The extension paths of the plurality of temperature sensing elements are independently selected from one or more of a straight line, a curve and a broken line.

4. The junction temperature monitoring system according to claim 3, characterized in that: The electrode has a first surface; The extension path of the temperature sensing element has at least one path unit connected in sequence, and the extension directions of adjacent path units are different. When the extension path is a curve, the extension direction of the target path unit is the extension direction of the tangent of the target path unit. The target path unit is any one of the path units, and each of the path units independently satisfies one of the following conditions: An extending direction of the path unit is parallel to the first surface; An angle is formed between an extension direction of the path unit and the first surface.

5. The junction temperature monitoring system according to claim 3, characterized in that: The electrode has a plurality of regions with equal volumes, and the plurality of temperature sensing elements are independently located in different regions.

6. The junction temperature monitoring system according to claim 3, characterized in that: The electrode has a plurality of regions arranged in a matrix, and the first ends of the plurality of temperature sensing elements are independently located in different regions.

7. The junction temperature monitoring system according to claim 1, characterized in that: The power semiconductor device has a first electrode and a second electrode located at two opposite sides, and the temperature sensing element is located inside the first electrode and / or the second electrode.

8. The junction temperature monitoring system according to any one of claims 1 to 7, characterized in that: The electrode has a plurality of accommodating holes extending inward from the surface, the temperature sensing element is located in the accommodating holes and corresponds to the accommodating holes one by one, the surface of the electrode having the target accommodating hole is the target surface, the target accommodating hole is any one of the plurality of accommodating holes, the temperature sensing element arranged in the target accommodating hole has a first endpoint at an end portion on one side close to the bottom of the target accommodating hole, the shortest distance between the first endpoint and the target surface is a first spacing, and the first spacing of at least two of the temperature sensing elements is different.

9. The junction temperature monitoring system according to any one of claims 1 to 7, characterized in that: The temperature sensing element includes any one or more of a thermocouple, a thermal resistor, a thermistor and a diode thermometer.

10. A junction temperature monitoring method, characterized in that: A data processing unit applied to a junction temperature monitoring system according to any one of claims 1 to 9, wherein the junction temperature monitoring method comprises: Acquire temperature information provided by a temperature sensing element in the junction temperature monitoring system and position information of a target position, wherein the target position is a position of the temperature sensing element in an electrode of a power semiconductor device in the junction temperature monitoring system; The junction temperature information of the power semiconductor device is output according to the temperature information, the position information and a preset model, wherein the preset model is: ， in, Indicates the chip junction temperature, Indicates the spatial coordinates of the junction temperature, Represents the spatial position coordinates and temperature detected by the sensor module of the nth temperature sensing element, represents the internal heating power of the electrode system, Indicates time.

Images