Photonic integrated chip and optical device

Abstract

The invention discloses a photonic integrated chip and optical equipment, and belongs to the technical field of photoelectron, the photonic integrated chip comprises a substrate, a laser chip, a modulator chip and an optical waveguide, the laser chip is arranged on a first surface of the substrate, the modulator chip is arranged on a second surface of the substrate, one end of the optical waveguide is coupled with the laser chip, and the other end of the optical waveguide is coupled with the modulator chip. And the other end is coupled with the modulator chip. The photonic integrated chip is of a three-dimensional stacked structure, coupling between the optical waveguide and the laser chip and the optical waveguide and coupling between the optical waveguide and the modulator chip are facilitated, coupling loss is small, discrete assembly is not needed, the integration level is high, the laser chip and the modulator chip are directly bonded through the optical waveguide, additional coupling elements are not needed, and cost is low. And the integration level of the photonic integrated chip is further improved.

Description

Technical Field

[0001] The present application belongs to the field of optoelectronic technology, and in particular, relates to a photonic integrated chip and an optical device. Background Art

[0002] The rapid development of emerging technologies such as 5G networks, cloud computing services, and artificial intelligence has put forward a huge challenge to the data center's data information processing capabilities and communication bandwidth. Among them, photonic integrated chip technology has the advantages of compact structure, low power consumption, and large bandwidth, and is considered to be one of the supporting technologies to solve the bandwidth bottleneck of future data center optical communication systems.

[0003] At present, photonic integrated chips still have problems such as high integration difficulty, high loss, and thermal crosstalk. How to break through the bottleneck limitations and realize three-dimensional stacked photonic integrated chips is a key research direction in this field. Summary of the invention

[0004] The present application provides a photonic integrated chip and an optical device, aiming to improve the integration of the photonic integrated chip and reduce the problems of loss and thermal crosstalk.

[0005] To achieve at least one of the above purposes, the embodiments of the present application provide the following technical solutions:

[0006] On the one hand, the present application provides a photonic integrated chip, including a substrate, a laser chip, a modulator chip and an optical waveguide, wherein the substrate includes a first surface and a second surface opposite to each other, the laser chip is arranged on the first surface, the modulator chip is arranged on the second surface, and one end of the optical waveguide is coupled to the laser chip, and the other end is coupled to the modulator chip.

[0007] In some embodiments, the substrate further includes a first side surface connecting the first surface and the second surface, and at least a portion of the optical waveguide is further disposed outside the first side surface. The photonic integrated chip further includes a protective layer disposed on the first side surface, and the protective layer covers at least a portion of the optical waveguide.

[0008] In some embodiments, the laser chip includes a second side surface close to the first side surface, the modulator chip includes a third side surface close to the first side surface, one end of the optical waveguide is coupled to the second side surface of the laser chip, and the other end is coupled to the third side surface of the modulator chip. The second side surface, the third side surface and the first side surface are arranged flush.

[0009] In some embodiments, the optical waveguide comprises a photonic bonding wire or an optical fiber.

[0010] In some embodiments, the material of the photonic bonding wire includes a free radical polymerizable photoresist.

[0011] In some embodiments, the material of the substrate includes diamond.

[0012] In some embodiments, the thickness of the substrate ranges from 300 μm to 400 μm.

[0013] In some embodiments, the laser chip includes a plurality of lasers, the modulator chip includes a plurality of connection ports, and one laser is coupled to one connection port of the modulator chip through one optical waveguide.

[0014] In some embodiments, the laser chip includes at least one laser, the laser includes a first end and a second end opposite to each other, the first end is used to emit laser light, the first end is coupled to an optical waveguide, the laser also includes an anti-reflection film and a high-reflection film, the anti-reflection film is arranged at the first end, and the high-reflection film is arranged at the second end.

[0015] In a second aspect, the present application further provides an optical device, comprising the photonic integrated chip and circuit board mentioned in any embodiment of the first aspect above, wherein the photonic integrated chip is disposed on the circuit board and is electrically connected to the circuit board.

[0016] In the photonic integrated chip provided in the present application, the laser chip is arranged on the first surface of the substrate, the modulator chip is arranged on the second surface of the substrate, one end of the optical waveguide is coupled to the laser chip, and the other end is coupled to the modulator chip, that is, the laser chip, the substrate and the modulator chip form a three-dimensional stacked structure, which is conducive to the coupling of the optical waveguide with the laser chip and the modulator chip respectively, with small coupling loss, no need for discrete assembly, and high integration. The laser chip and the modulator chip are directly bonded through the optical waveguide, and no additional coupling elements are required, which further improves the integration of the photonic integrated chip.

[0017] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0019] Figure 1 A schematic diagram of the structure of a photonic integrated chip provided in an embodiment of the present application;

[0020] Figure 2 for Figure 1 A top view of the photonic integrated chip shown;

[0021] Figure 3 A partially enlarged schematic diagram of a laser provided in an embodiment of the present application;

[0022] Figure 4 A schematic diagram of the structure of an optical device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0023] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments provided by the present application, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present application.

[0024] Unless the context requires otherwise, throughout the specification and claims, the term "comprising" is to be construed in an open, inclusive sense, ie, meaning "including, but not limited to."

[0025] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, unless otherwise specified, "plurality" means two or more.

[0026] When describing some embodiments, the term "connection" and its derivative expressions may be used. The term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For example, when describing some embodiments, the term "connection" may be used to indicate that two or more components are in direct physical or electrical contact with each other.

[0027] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0028] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0029] Exemplary embodiments are described herein with reference to cross-sectional views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include deviations in shape due to, for example, manufacturing. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0030] Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0031] The current society is undergoing a global information technology revolution, especially technologies such as big data, cloud computing, the Internet of Things and artificial intelligence are leading social changes in an unprecedented way. Therefore, the society's demand for network bandwidth has exploded, and optical communication technology is the underlying core physical foundation of communication technology. With the continuous increase in data capacity, the optical fiber communication network system built by discrete optoelectronic devices faces huge challenges in devices, quantity, volume, energy consumption and cost. In order to break through this bottleneck, photonic integrated circuit (PIC) chips are considered to be one of the best solutions due to their advantages of ultra-high precision, compact size, low cost and ultra-low power consumption.

[0032] However, the current photonic integrated chips still have problems such as difficult integration, thermal crosstalk, and high losses. For example, most of the current bonding connections between laser chips and other devices still rely on the discrete assembly of photonic chips and require additional coupling elements, such as mode field adapters on the chip or rather bulky micro lenses and steering mirrors. If these discrete systems are assembled into light-emitting chips, although the complementary advantages of different photonic integration platforms can be combined, complex high-precision alignment technology is required technically. The alignment technology relies on a high-precision positioning system and a continuous monitoring system for coupling efficiency when installing devices, which makes it impossible to achieve large-scale production and commercialization.

[0033] In addition, the silicon-based photonic integrated chip currently under research integrates photonic devices and electronic devices on the same silicon substrate. However, the optoelectronic properties of silicon materials themselves limit their application in high-density integrated light sources and high-speed optoelectronic modulators. In addition, there is a lattice mismatch between the semiconductor materials and silicon substrates of photonic devices and electronic devices, which increases the difficulty of integration. In addition, there is also the problem of thermal crosstalk when integrating photonic devices on silicon substrates. The thermal crosstalk of different devices will change the performance of photonic devices.

[0034] To solve at least one of the above problems, an embodiment of the present application provides a photonic integrated chip, such as Figure 1 As shown, Figure 1 A schematic diagram of the structure of a photonic integrated chip provided in an embodiment of the present application.

[0035] The photonic integrated chip 10 includes a substrate 11, a laser chip 12, a modulator chip 13 and an optical waveguide 14, wherein the substrate 11 includes a first surface P1 and a second surface P2 opposite to each other, the laser chip 12 is arranged on the first surface P1, the modulator chip 13 is arranged on the second surface P2, and one end of the optical waveguide 14 is coupled to the laser chip 12, and the other end is coupled to the modulator chip 13.

[0036] In related research, the laser chip 12 and the modulator chip 13 are usually arranged on the same side of the substrate 11. This limits the port settings of the laser chip 12 and the modulator chip 13. That is, in the process of coupling the two using the optical waveguide 14, due to the size of the laser writing field, the distance between the two should not be too large. If the distance is too small, it will increase the process difficulty and be unfavorable for the coupling of the optical waveguide 14 between the laser chip 12 and the modulator chip 13.

[0037] In the photonic integrated chip provided in the present application, the laser chip 12, the substrate 11 and the modulator chip 13 form a three-dimensional stacked structure, and the laser chip 12 and the modulator chip 13 are respectively located on the first surface P1 and the second surface P2 of the substrate 11. Based on this, it is more conducive to the coupling connection of the optical waveguide 14 with the laser chip 12 and the modulator chip 13 respectively, and the process operation is simpler and the coupling loss is smaller.

[0038] In addition, the laser chip 12 and the modulator chip 13 are integrated on the substrate 11 at the same time, and no discrete assembly is required. The photon integrated chip 10 under the three-dimensional stacking structure has a smaller area size and a high degree of integration. Moreover, the laser chip 12 and the modulator chip 13 can be directly coupled and connected through the optical waveguide 14, and no additional coupling elements are required, which further improves the integration of the photon integrated chip 10.

[0039] In some embodiments, Figure 1 As shown, the substrate 11 further includes a first side surface C1 connecting the first surface P1 and the second surface P2, and at least a portion of the optical waveguide 14 is also disposed outside the first side surface C1. The photonic integrated chip 10 further includes a protective layer 15 disposed on the first side surface C1, and the protective layer 15 covers at least a portion of the optical waveguide 14.

[0040] That is, in the embodiment of the present application, the routing design of the optical waveguide 14 is located outside the substrate 11 body and does not pass through the inside of the substrate 11. The coupling point and the routing design have a certain bending radius, which is beneficial to improving coupling reliability and reducing process limitations.

[0041] The protection layer 15 covers the outside of the optical waveguide 14 and protects the optical waveguide 14 to prevent the optical waveguide 14 from being broken or the coupling point from being disconnected due to external factors.

[0042] In some embodiments, Figure 1 As shown, the laser chip 12 includes a second side surface C2 close to the first side surface C1, the modulator chip 13 includes a third side surface C3 close to the first side surface C1, one end of the optical waveguide 14 is coupled to the second side surface C2 of the laser chip 12, and the other end is coupled to the third side surface C3 of the modulator chip 13. The second side surface C2, the third side surface C3 and the first side surface C1 are arranged flush.

[0043] The three-dimensional stacking structure is conducive to achieving the flush setting of the second side surface C2 of the laser chip 12, the first side surface C1 of the substrate 11 and the third side surface C3 of the modulator chip 13, that is, to achieve the flatness of the side surface of the three-dimensional stacking structure. Based on this, it is more conducive to the coupling of the two ends of the optical waveguide 14 with the laser chip 12 and the modulator chip 13 respectively, so that the coupling loss is smaller.

[0044] In some embodiments, the optical waveguide 14 includes an optical fiber, that is, light is used to perform docking coupling at the ports corresponding to the laser chip 12 and the modulator chip 13, and after docking, the docked optical fibers can be fixed with curing glue.

[0045] Alternatively, in other embodiments, the optical waveguide 14 includes photonic bonding wires.

[0046] The photonic bonding wire can be coupled with the laser chip 12 and the modulator chip 13 by using optical wire bonding (PWB) technology.

[0047] PWB technology uses the principle of two-photon exposure in photoresist to induce multi-photon polymerization effect, and then combines 3D printing technology to realize polymer waveguide structures of any shape. PWB technology can achieve efficient coupling between heterogeneous or heterogeneous chips according to the end surface structure size of chips of different material systems, with large manufacturing tolerance and low processing difficulty.

[0048] For example, in an embodiment of the present application, the laser chip 12 and the modulator chip 13 are placed on the first surface P1 and the second surface P2 of the substrate 11, respectively. Preferably, the second side C2 of the laser chip 12, the first side C1 of the substrate 11, and the third side C3 of the modulator chip 13 can be set flush, and the distance between the laser chip 12 and the modulator chip 13 is limited within the laser writing field size range. Then, the chip is cleaned with acetone, alcohol, etc., and photoresist is deposited on the outer side of the second side C2 of the laser chip 12, the first side C1 of the substrate 11, and the third side C3 of the modulator chip 13. Afterwards, based on machine vision technology, the area to be interconnected is identified by means of a marker, and a photon bonding wire, i.e., an optical waveguide 14, is exposed. The shape of the photon bonding wire can be adjusted accordingly according to parameters such as the distance between the chips and the mode field diameter. Finally, the unexposed photoresist is removed. At this point, the retained photon bonding wire realizes the coupling between the laser chip 12 and the modulator chip 13, and is used for the transmission and interconnection of optical signals between the two.

[0049] Exemplarily, in combination with the above process content, in some embodiments, the material of the photon bonding wire includes a free radical polymerization type photoresist. The free radical polymerization type photoresist does not need to be baked and cured, which can simplify the process, and during the use of the free radical polymerization type photoresist, the lens can be directly immersed in the photoresist without the need for quartz glass covering, which can avoid aberrations caused by uneven thickness of the photoresist or mismatched refractive index.

[0050] In some embodiments, the material of the substrate 11 includes diamond. Diamond material has unique and excellent properties, such as high hardness, high strength, high elastic modulus and thermal conductivity, good insulation resistivity, wide bandgap, etc., and has high application value in the field of electronics.

[0051] Exemplarily, in some embodiments, the thickness of the substrate 11 ranges from 300 μm to 400 μm.

[0052] In related research, when forming a photonic integrated chip on a silicon substrate, due to the large thermal-optical coefficient of silicon and its high sensitivity to changes in ambient temperature, when a device in the photonic integrated chip generates heat, it will cause a local temperature rise, which will then affect the performance of adjacent devices through heat conduction. In addition, different devices are connected to each other through structures such as optical waveguides and electrodes, and these connection structures will also become channels for heat transfer, causing heat to be transferred between devices.

[0053] The laser chip 12 is a heat-sensitive light source, and the temperature change greatly affects the performance of the light source. For example, when the laser is working, it generates heat, which changes the effective refractive index of the laser and thus changes the lasing wavelength. At the same time, the heat generated by adjacent lasers will cause thermal crosstalk.

[0054] In the embodiment provided in the present application, the above problems can be avoided to a great extent by using diamond material as the substrate 11. Diamond has excellent thermal properties, its operating temperature can reach 600°C, and its thermal conductivity can usually reach 2000W / (m·K)~2600W / (m·K), which is five times the thermal conductivity of copper. It is one of the materials with the highest thermal conductivity in nature and is an ideal heat dissipation material for high-power semiconductor lasers, microwave devices and integrated circuits.

[0055] Using diamond as the substrate 11 can utilize its excellent thermal conductivity to quickly disperse and conduct the heat generated by the internal components of the photonic integrated chip 10 to the external environment, thereby significantly reducing the chip temperature in a very short time and effectively alleviating or even eliminating the thermal crosstalk phenomenon.

[0056] In addition, the material of the substrate 11 includes diamond, which also provides a possibility for solving the serious heat generation problem faced by high-power lasers in the integration of photonic chips. In related research, a high-power laser is included in a photonic chip (such as a laser chip 12). While generating a strong optical signal, a high-power laser also releases a large amount of heat energy, which often limits its wide application in photonic chips. The high thermal conductivity of diamond can ensure that the heat is timely and efficiently exported, and the temperature of the high-power laser and the surrounding environment is kept stable, thereby not only improving the working efficiency and stability of the laser, but also enabling the high-power laser to be smoothly integrated into the photonic chip, greatly enhancing the overall performance and reliability of the photonic chip.

[0057] As the thickness of the diamond substrate 11 increases, the diamond grains become larger, and the columnar growth characteristics of the diamond film become more obvious, which significantly reduces the grain boundary density, thereby improving the thermal conductivity. That is, the thermal conductivity of diamond increases significantly with the increase of the film thickness. When the film thickness is less than 10 μm, the thermal conductivity of the diamond substrate 11 is very low, and it is difficult to achieve an ideal heat dissipation effect.

[0058] For the polycrystalline diamond substrate 11, its thermal conductivity depends on the grain size. For the diamond substrate 11 with a columnar structure, the thermal conductivity decreases compared to the highest thermal conductivity in the growth direction and decreases to the highest value in the lateral direction.

[0059] Taking into account the above-mentioned influencing factors, in some embodiments provided in the present application, the thickness of the diamond substrate 11 is preferably 300 μm to 400 μm, and its thermal conductivity is more than three times that of a traditional brass or aluminum nitride substrate.

[0060] In some embodiments, Figure 2 As shown, Figure 2 for Figure 1The top view of the photonic integrated chip is shown in FIG. The laser chip 12 includes a plurality of lasers 120 , and the modulator chip 13 includes a plurality of connection ports. One laser 120 is coupled to one connection port of the modulator chip 13 through one optical waveguide 14 .

[0061] The laser 120 on the laser chip 12 can be single or multiple, and the multiple lasers 120 are arranged in an array with a fixed frequency interval. The laser chip 12 also includes a thin film circuit 121, which is used to inject current into the laser 120 and dissipate heat. Each laser 120 is coupled to a connection port of the modulator chip 13 through an optical waveguide 14, which is used to receive the modulation signal of the modulator chip 13, so as to realize the modulation of the optical signal output by the laser 120 by the modulator chip 13. The connection port of the modulator chip 13 here can be understood as the channel port of the modulator chip 13, which is used to output the modulated signal.

[0062] In some embodiments, Figure 3 As shown, Figure 3 A partially enlarged schematic diagram of a laser provided in an embodiment of the present application. The laser chip 12 includes at least one laser 120, the laser 120 includes a first end D1 and a second end D2 opposite to each other, the first end D1 is used to emit laser light, the first end D1 is coupled to the optical waveguide 14, the laser 120 also includes an anti-reflection film and a high-reflection film, the anti-reflection film is disposed at the first end D1, and the high-reflection film is disposed at the second end D2.

[0063] Exemplarily, the laser 120 may be a distributed feedback laser, referred to as a DFB laser.

[0064] In the preparation process of the DFB laser, the grating can be firstly manufactured, and then the single-mode waveguide is etched, and then a series of processes such as coating an oxide film for electrical isolation, opening an electrode window, evaporating a positive electrode, thinning, evaporating a negative electrode, etc. are carried out, and finally it is dissociated into a single strip structure (i.e., a bar strip) and end-face coating is performed to form the laser 120.

[0065] In the embodiment of the present application, the first end D1 of the laser 120 can be understood as the light outlet side. The light outlet of each laser 120 is coupled to the channel port of the modulator chip 13 through the optical waveguide 14, so as to realize the generation and modulation of the optical signal.

[0066] An anti-reflection film is provided at the first end D1 of the laser 120 and a high-reflection film is provided at the second end D2. The end face reflectivity of the anti-reflection film is in the range of 0.05% to 1%, and the reflectivity of the high-reflection film is above 95%. Based on this, it is beneficial to increase the light output power of the laser 120.

[0067] Preferably, during the preparation process, the grating period can be reasonably designed so that the laser 120 operates in the 1550nm band, and the laser waveguide is designed as a single-mode waveguide to ensure that its output light in the 1550nm communication band has relatively good characteristics.

[0068] In a second aspect, the present application also provides an optical device, such as Figure 4 As shown, Figure 4 The optical device 20 includes the photonic integrated chip 10 and the circuit board 21 mentioned in any embodiment of the first aspect, and the photonic integrated chip 10 is disposed on the circuit board 21 and is electrically connected to the circuit board 21.

[0069] The photonic integrated chip 10 has a three-dimensional stacking structure, and the laser chip 12 and the modulator chip 13 are integrated on the substrate 11 at the same time, without the need for discrete assembly. The photonic integrated chip 10 under the three-dimensional stacking structure has a smaller area size and a higher degree of integration. Moreover, the laser chip 12 and the modulator chip 13 can be directly coupled and connected via an optical waveguide 14, without the need for additional coupling elements. The process operation is simpler, the coupling loss is smaller, and the degree of integration of the photonic integrated chip 10 is further improved.

[0070] Preferably, in the photonic integrated chip 10, the material of the substrate 11 includes diamond, which has a high thermal conductivity, which is conducive to solving the thermal crosstalk problem in the photonic integrated chip 10, and the saturation current and saturation power of the laser 120 are greatly increased. Moreover, thanks to the optimization of the thermal crosstalk problem, the various devices in the photonic integrated chip 10 can be more closely integrated together, which is conducive to the miniaturization of the photonic integrated chip 10. In addition, the use of PWB technology to achieve the coupling of the optical waveguide 14 between the laser chip 12 and the modulator chip 13 can further reduce the coupling loss and significantly improve the optical performance.

[0071] In summary, the photonic integrated chip 10 has the characteristics of good single-mode output light characteristics, high power, good heat dissipation performance, and low thermal crosstalk. It adopts PWB technology for precise integration, high optical coupling efficiency, or uses traditional optical fiber coupling, which is convenient and simple.

[0072] Based on this, the optical device 20 formed by the photonic integrated chip 10 also has the above-mentioned beneficial effects, which makes the optical device 20 have broader development prospects in the fields of optical communication, optical sensing, optical imaging and optical quantum information technology.

[0073] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that a person skilled in the art can think of within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A photonic integrated chip, characterized in that: include: a substrate comprising opposing first and second surfaces; A laser chip is disposed on the first surface; A modulator chip is disposed on the second surface; An optical waveguide, one end of which is coupled to the laser chip, and the other end of which is coupled to the modulator chip.

2. The photonic integrated chip according to claim 1, characterized in that: The substrate further comprises a first side surface connecting the first surface and the second surface, and at least a portion of the optical waveguide is further disposed outside the first side surface; The photonic integrated chip further includes a protection layer disposed on the first side surface, wherein the protection layer covers at least a portion of the optical waveguide.

3. The photonic integrated chip according to claim 2, characterized in that: The laser chip includes a second side surface close to the first side surface, and the modulator chip includes a third side surface close to the first side surface; one end of the optical waveguide is coupled to the second side surface of the laser chip, and the other end is coupled to the third side surface of the modulator chip; The second side surface, the third side surface and the first side surface are arranged flush with each other.

4. The photonic integrated chip according to claim 1, characterized in that: The optical waveguide includes a photonic bonding wire or an optical fiber.

5. The photonic integrated chip according to claim 4, characterized in that: The material of the photon bonding wire includes free radical polymerization type photoresist.

6. The photonic integrated chip according to claim 1, characterized in that: The material of the substrate includes diamond.

7. The photonic integrated chip according to claim 6, characterized in that: The thickness of the substrate ranges from 300 μm to 400 μm.

8. The photonic integrated chip according to claim 1, characterized in that: The laser chip includes a plurality of lasers, and the modulator chip includes a plurality of connection ports; One of the lasers is coupled to a connection port of the modulator chip through one of the optical waveguides.

9. The photonic integrated chip according to claim 1, characterized in that: The laser chip comprises at least one laser, wherein the laser comprises a first end and a second end opposite to each other, wherein the first end is used for emitting laser light, and the first end is coupled to the optical waveguide; The laser further includes an anti-reflection film and a high-reflection film, wherein the anti-reflection film is disposed at the first end and the high-reflection film is disposed at the second end.

10. An optical device, characterized in that: include: The photonic integrated chip according to any one of claims 1 to 9; A circuit board, wherein the photonic integrated chip is arranged on the circuit board and is electrically connected to the circuit board.

Images