Ultrashort-wavelength photoetching improvement method of photoetching machine

Abstract

The invention discloses an ultra-short wavelength photoetching improvement method of a photoetching machine, and relates to a'modified light source ', a'improved circuit diagram', a'improved objective lens' and a'improved mask 'which are mutually restricted and complementary, and a'window' of'maximum convention technical data ', so as to realize the invention object of the invention.

Description

Technical Field

[0002] The field of lithography machine optical system. Background Art

[0004] Brief description of the technical features of the optical system of the prior art lithography machine and their differences from the technical features of this application:

[0005] 1. Existing Technology It is extreme ultraviolet light, and its wavelength is greater than the wavelength of the X-ray light source of this application.

[0006] 2. Existing Technology It is for extreme ultraviolet light Reflected light imaging , while this application is X-ray Transmission Imaging ; Prior art The draft line is a color line that absorbs light, and the The draft line is a dry slurry layer of high-density metal powder or high-density salt powder mixed with a binder that is printed by the screen printing method to block X-rays.

[0007] 3. The objective lens of the prior art is a transparent or opaque non-metallic material, while the objective lens of the present application is "beryllium" which has low density, high strength, good stability and good thermal conductivity and is commonly known as "metallic glass".

[0008] IV. Existing technologies may or may not be used Mask is perpendicular to the optical axis Planar state, and the mask of the present application is to firstly Heat treatment to form a spherical convex body with equal radius, and then change it into a flat shape after photolithography. The mask is genuine; the available existing technology mask and the photolithography contact layer of the wafer are relatively weak in strength Photosensitive adhesive layer reinforcement layer , and the photolithography contact layer with the wafer of the present application is better than the prior art High-density metal layer with hundreds of thousands of times greater strength ; The latest prior art has abandoned the use of masks and changed to relatively long-distance Technology, and this application is to use the mask on the light shielding layer is high density Obviously, relative to current technology This application of

[0009] The primary task of the lithography machine optical field is ultra-clear imaging and ultra-reduced imaging. ( Theoretical Proof :According to the attached Figure 1According to the law of convex mirror imaging "large near and small far", the image of the circuit draft perpendicular to the optical axis and on the other side of the convex mirror should be a three-dimensional curved surface convex to the convex mirror direction, but the imaging carrier of the prior art is flat, so the prior art has carried out the convex mirror surface correction technology; while the photolithography imaging carrier of the present application is Proven Example : A clear group photo of hundreds of people in horizontal and vertical strips, when the people being photographed are on a circle of equal radius. That is, the clear image on the circle of equal radius It reflects the clarity of the horizontal straight line. ). Summary of the invention

[0011] The technical solution of this application, The technical solution of this application is Technical personnel in the relevant technical field pass Existing facilities in my country Routine experiments Ultra-short wave Clear imaging for photolithography technical solutions.

[0012] This application involves "changed light source", "improved circuit diagram", "improved objective lens", "improved mask"; It is the specific wavelength of X-rays used. It seems contradictory that both the X-rays of the wavelength used should be blocked and the X-rays of the wavelength used should be able to penetrate. The subject matter of this application is achieved by utilizing the technical data of different metals with large density differences and large thickness differences; the "modified light source", "improved circuit diagram", "improved objective lens" and "improved mask" are

[0013] The "changed light source" is Two X-ray light sources with different wavelengths, one is an X-ray light source with a relatively short wavelength, and the other is an X-ray light source with a relatively long wavelength; Relatively short wavelength An X-ray light source having a wavelength selected as described above and a thickness of Thin The metal beryllium "improved objective lens" is transmitted and focused by the X-rays that form an image. In band The wavelength is as long as possible; Relatively long wavelength The X-ray source has a wavelength of The X-ray is transmitted through the selected relatively thick Thinner The metal beryllium "improved objective lens" is adjusted to parallel lines In band , the wavelength is as long as possible.

[0014] The "improved circuit diagram" is perpendicular to the optical axis of the "spherical convex lens of equal radius" and is more than twice the focal length; the substrate of the "improved circuit diagram" is a sheet material with stable physical form, good heat resistance and thermal conductivity, low density and as thin as possible thickness as the base material; the slurry printed on the substrate of the "improved circuit diagram" is a slurry that is affinity with the substrate or affinity with the substrate through indirect media; the slurry for printing circuit lines on the substrate of the "improved circuit diagram" is a mixed slurry of high-density metal powder or high-density salt powder and a binder; the "improved circuit diagram" determines the safe thickness of the dry matter of the slurry printed by conventional experiments on the selected X-ray lithography.

[0015] The technical features of the "improved objective lens" are: The prior art of precision correction of the objective lens surface; the "improved objective lens" is selected from two "improved objective lenses", one of which is thin Metal beryllium equal radius spherical convex mirror, one is Thinner Metal beryllium equal radius spherical convex mirror; thin Metal beryllium equal radius spherical convex mirror is able to be Wavelength relative short X-ray transmission and focusing imaging; Thinner Metal beryllium equal radius spherical convex mirror is only Relatively long wavelength The X-rays are adjusted to parallel lines after transmission;

[0016] The technical features of the "improved mask" are: the substrate is an organic sheet with thermoplastic physical characteristics, relatively stable mechanical properties and relatively low density, which can be transmitted by the X-ray with relatively short wavelength; the practical surface of the organic sheet is "plated with metal particles" (attached Figure 3 ); the metal layer of the "metal particle plating" is a high-density metal plating layer that is not transparent to the selected X-rays; the thickness of the metal plating layer of the "metal particle plating" is as large as possible; on the sheet substrate of the "improved mask", a plurality of identical "improved masks" can be arranged in an "improved mask" array with divided gaps; the "improved mask" array Heat treatment An "improved mask" with a "spherical surface of equal radius" that is equal in size to the photolithography silicon "wafer" Semi-finished products ; On the thick layer of "metal particle plating" on the convex surface of the semi-finished product of the "spherical surface of equal radius", a semiconductor circuit photolithography process is performed N times; after the process flow of the N times is completed, the metal layer of the "metal particle plating" is etched, and the metal particles bombarded into the surface layer of the organic substrate and the organic sheet are moderately etched (attached Figure 3 ); removing dirt; the N cycle process, Made of multi-layer Semiconductor circuit; the semi-finished product of "improved mask" with "metal particle plated" circuit layer on the surface, Heat Treatment and Negative pressure straight means , becomes a straight "improved mask" genuine product (attached Figure 2 ); the N different circuit "improved masks" are authentic, and then a number of copies are made as authentic "improved masks" for rotary lithography; the authentic "improved masks" are used as masks for gapless lithography of each layer of circuits on the wafer; the authentic "improved masks" are used as masks for gapless lithography of each layer of circuits on the wafer; Directly contact with the wafer to achieve photolithography; after each "improved mask" is photolithographic, it automatically Give way to Wait for the lithography to produce the genuine "improved mask", clean it automatically, and rotate automatically before waiting for lithography again.

[0017] In view of the fact that the "changed light source", "improved circuit diagram", "improved objective lens" and "improved mask" each have optional technical data tolerances, in view of the fact that the "changed light source", "improved circuit diagram", "improved objective lens" and "improved mask" have optional technical data tolerances, According to the law, "technicians in the relevant technical field" can, after many "routine experiments", achieve the greatest common technical data among "changed light source", "improved circuit diagram", "improved objective lens" and "improved mask", and realize ultra-short wave lithography technology in the optical field of lithography machines.

[0018] Further supplementary explanations are given for the complementary "changed light source", "improved circuit diagram", "improved objective lens" and "improved mask", which are known by "technical personnel in the relevant technical field" according to the law and can be achieved through "routine experiments" as follows.

[0019] 1. About “changing light source”.

[0020] The reason why existing technologies only pursue 1-2 nanometer extreme ultraviolet light for "mask" or "wafer" lithography is to clearly image the minimum spacing between circuit lines on smaller chips and prevent the circuits from contacting each other and causing short circuits, which would render the chips scrapped. The smaller interval clear imaging is directly related to reducing the wavelength of the lithography light source. The higher the qualified rate of the chips produced.

[0021] This application will be prior art Extreme ultraviolet light source, changed to modulated X-ray The wavelength of X-rays is between ultraviolet rays and gamma rays (between 0.001 and 10 nanometers; X-rays used in medicine are about 0.001 and 0.1 nanometers). If X-ray lithography of chips is to be realized, it is obvious that the realization of lithography chips at the wavelength of 1 nanometer or less is not necessary, without considering photosensitive adhesive technology, etc. Not the subject of this application Under the premise of being very practical.

[0022] In the medical field alone, there is existing technology for X-ray photosensitive imaging, and the existing technology can modulate X-rays to specific wavelengths. Technical personnel in the relevant technical field ", according to the law, based on the present application, the metal "beryllium" spherical convex mirror with the smallest thickness and the same radius that can be penetrated by the X-ray, Through routine experiments (Using photosensitive film to measure the focus), it is possible to select N specific X-ray wavelengths with high cost performance (these N different X-ray wavelengths can each penetrate the metal beryllium equal-radius spherical convex mirror for imaging and enable the "improved mask" or photosensitive resin on the wafer to be photolithographically processed).

[0023] Note: The control of X-ray wavelength involves: 1. Light source selection. Such as synchronous auxiliary light source, free electron laser, etc.; 2. Design and manufacture of optical components. Such as reflectors, lenses, gratings, etc.; 3. Preparation technology. Such as evaporation deposition, sputtering deposition, pulsed laser deposition, laser molecular beam epitaxy, etc.; 4. Adjustment and control of environmental parameters. Such as pressure, temperature, atmosphere, etc.; 5. Real-time monitoring and feedback system. The above-mentioned prior art is legally a technology that can be achieved by "technical personnel in the relevant field" through "routine experiments".

[0024] 2. Regarding the “improved circuit diagram”.

[0025] Since the present application scheme uses a "changed light source" - X-rays, the "improved circuit diagram" must have two technical features: absorbing (blocking) X-rays and allowing X-rays to penetrate.

[0026] The "improved circuit diagram" of the present application is to print (such as the "screen printing" of the prior art) a slurry formed by mixing a high-density metal powder or a high-density salt powder with a binder on a sheet with relatively low density, stable mechanical properties and as small a thickness as possible, Circuit diagram is missing.

[0027] The said printing is as thick as possible. Technical personnel in the relevant technical field "According to the law, the "slurry" is to prevent X-rays from penetrating. In other words, the "improved circuit diagram" is a transmission circuit diagram that alternates between X-ray shielding and X-ray penetration.

[0028] 3. Regarding the “improved objective lens”.

[0029]

[0030] Metallic beryllium has low density, high hardness, good thermal conductivity and dimensional properties, and the strongest X-ray penetration ability among metals, so it is called "metallic glass."

[0031] The "improved objective lens" of this application is Existing technology for precision correction of the objective lens surface. If the existing technology for precision correction of the objective lens surface is used, Not only is it useless, it is harmful . reason:

[0032] The existing technology for precision correction of the objective lens surface is the extension of the objective lens technology of "high", "precision" and "sharp" cameras. For cameras, it is not only required to flexibly capture clear images at different object distances, but also to strive for the same object distance (perpendicular to the optical axis) Plane Objects ), which is perpendicular to the optical axis on the other side of the convex mirror. Planar imaging (See Appendix Figure 1 ), it is obvious that this does not conform to objective laws. Planar imaging receptor In order to ensure a clear image on the camera lens (film or data card), technicians in the field of camera lenses have tried every possible means to precisely correct the surface of the lens.

[0033] However, for the optical field of lithography machines, it is a good idea to continue to use the camera lens surface for precision correction technology. Not only is it useless, it is harmful Reasons:

[0034] 1. The object photographed by the photolithography machine is only the circuit diagram with a flat surface perpendicular to the optical axis. There is no need to image the objects in front of and behind the circuit diagram.

[0035] 2. According to the attached Figure 1 Points 1, 2, 3, and 4 are not only points on the flat surfaces 1, 2, 3, and 4, but also points on the spherical surfaces A, B, C, and D of equal radius. However, the images of the spherical surfaces A, B, C, and D of equal radius on the other side of the objective lens are formed by different distances from the center of the convex mirror 0 on the optical axis. From near to far . Based on the principle of convex mirror imaging, "near is big and far is small" That is, points 1, 2, 3, and 4 on a straight line perpendicular to the optical axis are imaged by a convex mirror but are imaged as 4′, 3′, 2′, and 1′ on a curve. According to this Argument , the circuit diagram on the flat surface, after being imaged by a convex mirror, actually becomes a real image of a spherical surface with equal radius (see also the attached Figure 4 This is the reason why the existing technology corrects the surface of the objective lens. The objective fact of optics is that all the imaging points on this spherical surface with equal radius are

[0036] This application is completely different from the prior art, and is aimed at the real image of the spherical surface with equal radius. For the processing technology of the real image of the spherical surface with equal radius, please see the "improved mask" below.

[0037] 4. Regarding the “improved mask”.

[0038] The "improved mask" of the present application is divided into several stages of process flow. The thickest possible "metal particle plating" layer is applied on the practical surface of a flat, relatively low-density, thermoplastic physical characteristic, relatively stable mechanically, and relatively thin organic sheet. The metal of the plating layer is a metal with the highest possible density and strong wear resistance, which is an innovation of the "improved mask" (increasing service life and facilitating each cleaning). The thin sheet after "metal particle plating" is then arranged and heat-treated into N raised spherical surfaces of equal radius, which are the same size as the photolithography wafer. Photosensitive adhesive is then evenly coated on the raised spherical surfaces of equal radius, which is used to facilitate precise imaging on the convex surface of the spherical surface of equal radius (see attached figure). Figure 4 4-9); and after being uniformly coated with photosensitive resin and photolithography, the spherical surface of equal radius is treated with heat and negative pressure to be flat (see Appendix Figure 5 5-5) is to enable photolithography without gaps with flat wafers in the future. Place the metal coating face down It is in direct close and gapless contact with the wafer to realize photolithography, and after photolithography, it gives way to the same "improved mask" to be photolithographic, and after the surface is cleaned, it takes turns to repeat the photolithography.

[0039] Note 1: In view of the fact that the photoresist layer (light blocking and light transmitting layer) of the "improved mask" is a mechanically strong metal layer, Therefore, the present application method does not adopt the prior art Projection Imaging Photolithography , and use a mask-wafer gap-free lithography method.

[0040] Note 2: In the "metal particle plating" technical means collected in this application, some of the metal particles are bombarded into the surface of the plated substrate, so the bonding between the plating layer and the plated substrate is very strong; however, after etching the metal plating layer, the metal particles that have bombarded into the substrate need to be removed.

[0041] According to the Patent Law, the "modified light source", "improved circuit diagram" and "improved object" of the present application method are The "routine experiments" of "mirrors" and "improved masks" should be carried out by "technical personnel in the relevant field" who have the experimental conditions.

[0042] Text description of the attached figure.

[0043] Attached Figure 1 : Schematic diagram of concentric spherical imaging of a plane circuit draft perpendicular to the optical axis of a spherical convex mirror of equal radius.

[0044] Note: This figure is only a geometric optical schematic diagram of the three-dimensional form of the "improved mask".

[0045] 0: The lens center of the "spherical convex lens with equal radius". The "improved mask" realizes the overall clear real image of the "improved mask" under the condition of the "spherical convex lens with equal radius" with the same center.

[0046] 4-4′: A straight line or a flat surface perpendicular to the optical axis, i.e., the “improved circuit drawing” of the present application.

[0047] A: A three-dimensional spherical surface A of equal radius that is at a relatively close distance and is twice the focal length away from the lens center of the "spherical convex lens of equal radius".

[0048] 1: It represents both any point on the spherical surface A of equal radius in three-dimensional space and several points on the plane of the "improved circuit diagram".

[0049] B: A three-dimensional spherical surface B of equal radius, which is twice the focal length away from the lens center of the "spherical convex lens of equal radius" and is far away from A.

[0050] 2: It represents both any point on the spherical surface B of equal radius in three-dimensional space and several points on the plane of the "improved circuit diagram".

[0051] C: A three-dimensional spherical surface C of equal radius that is twice the focal length away from the lens center of the "spherical convex lens of equal radius" and is relatively far away from B.

[0052] 3: It represents both any point on the spherical surface C of equal radius in three-dimensional space and several points on the plane of the "improved circuit diagram".

[0053] D: A three-dimensional spherical surface D of equal radius that is twice the focal length away from the lens center of the "spherical convex lens of equal radius" and is relatively far away from C.

[0054] 4: It represents both any point on the spherical surface D of equal radius in three-dimensional space and several points on the plane of the "improved circuit diagram".

[0055] 1′: An arbitrary imaging point on the three-dimensional spherical surface 1′ of equal radius that is imaged by the “spherical convex lens of equal radius” on the three-dimensional spherical surface A of equal radius and is relatively far away from the “spherical convex lens of equal radius” 0 (the smaller the object distance, the larger the image distance and the larger the real image; conversely, the larger the object distance, the smaller the image distance and the smaller the real image).

[0056] Note: The straight line (plane) perpendicular to the optical axis "1'" only represents the real image of the equal-radius spherical surface A in three-dimensional space and the center of the "equal-radius spherical convex lens" It represents both any point on the spherical surface C of equal radius in three-dimensional space and several points on the plane of the "improved circuit diagram". Not a flat imaging surface .

[0057] 2′: An arbitrary imaging point on the three-dimensional space spherical surface B with equal radius imaged by the “spherical convex lens with equal radius”, which is relatively close to the three-dimensional space spherical surface 1′ with equal radius and is on the three-dimensional space spherical surface 2′ with equal radius (the smaller the object distance, the larger the image distance and the larger the real image; conversely, the larger the object distance, the smaller the image distance and the smaller the real image).

[0058] Note: The straight line (plane) perpendicular to the optical axis "2'" only represents the real image of the equal-radius spherical surface B in three-dimensional space and the center of the "equal-radius spherical convex lens". It represents both any point on the spherical surface B of equal radius in three-dimensional space and several points on the plane of the "improved circuit diagram". Not a flat imaging surface .

[0059] 3′: An arbitrary imaging point on the three-dimensional space spherical surface C with equal radius imaged by the “spherical convex lens with equal radius”, which is relatively close to the three-dimensional space spherical surface 2′ with equal radius and is close to the “spherical convex lens with equal radius” (the smaller the object distance, the larger the image distance and the larger the real image; conversely, the larger the object distance, the smaller the image distance and the smaller the real image).

[0060] Note: The straight line (plane) perpendicular to the optical axis "3'" only represents the image of the equal-radius spherical surface C in three-dimensional space and the center of the "equal-radius spherical convex lens" It represents both any point on the spherical surface C of equal radius in three-dimensional space and several points on the plane of the "improved circuit diagram". Not a flat imaging surface .

[0061] 4′: An arbitrary imaging point on the three-dimensional space spherical surface D with equal radius imaged by the “spherical convex lens with equal radius”, which is relatively close to the three-dimensional space spherical surface 3′ with equal radius and on the three-dimensional space spherical surface 4′ with equal radius (the smaller the object distance, the larger the image distance and the larger the real image; conversely, the larger the object distance, the smaller the image distance and the smaller the real image).

[0062] Note: The straight line (plane) perpendicular to the optical axis "4'" only indicates the relative distance between the image of the equal-radius spherical surface D in three-dimensional space and the center of the "equal-radius spherical convex lens". The clear image surface is not a real image .

[0063] Attached Figure 2 , Schematic diagram of the semi-finished straight box of the “improved mask”.

[0064] 2-1: Piston gravity accessories.

[0065] 2-2: Improved mask semi-finished flat box shell.

[0066] 2-3: Pressure sensing element for intelligent pressure control.

[0067] 2-4: Gas constant temperature intelligent device.

[0068] 2-5: The spherical improved mask semi-finished product that is transformed into a flat surface in the improved mask flat box.

[0069] 2-6: The tiny vent holes at the bottom of the improved mask flat box.

[0070] 2-7: The bottom of the improved mask straight box has a flexible baffle that can move up and down.

[0071] Attached Figure 3 , schematic diagram of the metal particle plating effect on the improved mask substrate.

[0072] 3-1: The density of the improved mask is relatively small compared to the organic substrate.

[0073] 3-2: Improved metal particle coating on mask substrate.

[0074] 3-3: Metal particles in the metal particle coating on the improved mask substrate are bombarded into the surface layer of the organic substrate.

[0075] 3-4: The metal particle layer after photolithography and metal layer etching, i.e. the X-ray blocking (light absorbing) layer.

[0076] 3-5: After photolithography and metal layer etching, the metal particles are completely etched away, leaving only the organic substrate layer with relatively low density.

[0077] Attached Figure 4 , schematic diagram of the “improved mask” semi-finished product being photolithographically coated with photosensitive resin.

[0078] 4-1: Soft X-ray light source.

[0079] 4-2: Aperture that controls light flux.

[0080] 4-3: A spherical convex mirror of equal radius made of metal "beryllium" that controls the light source rays into parallel rays.

[0081] 4-4: Use X-ray sensitive film to measure the size of the photosensitive area from different positions to control the parallel effect of X-rays.

[0082] 4-5: Transmission drawing of the “improved circuit drawing”.

[0083] 4-6: Spherical convex mirror of equal radius made of metal beryllium.

[0084] 4-7: Support plate for photolithography of semi-finished products of "improved mask".

[0085] 4-8: Inlet pipe for the circulation of air conditioning gas in the lithography system.

[0086] 4-9: “Improved mask” semi-finished product.

[0087] 4-10: Air conditioning and sealing equipment for photolithography system.

[0088] 4-11: Temperature sensing element of air conditioner.

[0089] 4-12: Exhaust pipe for the circulation of air conditioning gas in the photolithography system.

[0090] Attached Figure 5 , schematic diagram of improved mask genuine and wafer photolithography (exposure) with no gap.

[0091] 5-1: X-ray source system.

[0092] 5-2: Aperture for regulating light flux.

[0093] 5-3: Metal beryllium convex mirror used to change X-rays into parallel lines.

[0094] 5-4: Use X-ray sensitive film to measure the size of the photosensitive image from different directions to monitor whether the X-rays are parallel.

[0095] 5-5: The genuine product after the “improved mask” is straightened.

[0096] 5-6: Silicon wafer subjected to photolithography.

[0097] 5-7: Air pressure controls the support plate for gapless photolithography between silicon wafer and mask. Together with the two devices "5-9", it intelligently undertakes the support and distance functions for gapless photolithography.

[0098] 5-8: Silicon 9 wafer tray delivery.

[0099] 5-9: Intelligent macro measurement and control device.

[0100] 5-10: The outer wall of the photolithography chamber.

[0101] 5-11: Temperature control element.

[0102] 5-12: Photolithography of indoor gas air conditioning heat exhaust pipe.

[0103] Attached Figure 6 , "improved mask" and "wafer" macro lithography bird's-eye view schematic diagram alternately.

[0104] 6-1: Place N identical "improved masks" and rotate the photolithography wheel in a flow-through manner.

[0105] 6-2: Extreme ultraviolet light system.

[0106] 6-3: Finely polished spherical concave-convex lens set with equal radius Regulate uniform and parallel extreme ultraviolet light components.

[0107] 6-4: Capture and transfer wafer components.

[0108] 6-5: A component that cleans the "improved mask" that has just completed the photolithography process in an assembly line operation. DETAILED DESCRIPTION

[0110] 1. About the changed light source. (0) The wavelength of X-rays. First, the refractive index data of pure metal beryllium for various wavelengths is obtained through existing technology, and N different radius lengths and different curvature lengths on the equal radius sphere are preset as the size design diagram of the objective lens.

[0111] Since the X-ray used in this application is In view of the relatively short wavelength of the X-rays of the semi-finished "improved mask" for lithography, even if its wavelength is shorter, it will not only penetrate the photosensitive layer but also the metal particle layer and will not affect the quality of the mask; and when the circuit diagram used to transmit through the genuine "improved mask" is used for photolithography of the silicon wafer, the high-density metal layer on the genuine "improved mask" blocks the X-rays, so the wavelength of the X-rays used can only be longer and cannot be shorter.

[0112] 2. Regarding the improved circuit diagram.

[0113] 1. Choose a sheet material with stable physical form, heat resistance and thermal conductivity, low density and as thin as possible as the base material.

[0114] 2. The slurry used to print the circuit artwork on the substrate is a slurry that is compatible with the substrate or is compatible with the substrate through an indirect medium.

[0115] 3. The slurry for printing the circuit diagram on the substrate is a mixed slurry of high-density metal powder or high-density salt powder and a binder.

[0116] 4. Through routine experiments on the selected X-ray exposure, determine the safe thickness of the dry matter of the slurry to be printed. Considering that the size of the circuit artwork is much larger than that of the mask, the thickness of the circuit artwork can be achieved by repeated printing N times.

[0117] 3. About the improved objective lens.

[0118] 1. According to the design drawing, two objective lenses of different thicknesses are prefabricated for routine experiments. One is an "improved objective lens" for photolithography of the semi-finished "improved mask", and the other is for gapless photolithography of the genuine "improved mask" and silicon wafer.

[0119] 2. There are two conventional experimental targets for metal beryllium objectives: one is the objective lens used for lithography of "improved mask" semi-finished products (spherical convex surfaces with equal radius); the other is the objective lens used for lithography of "improved mask" genuine products (processed into flat surfaces).

[0120] 3. In routine experiments, the minimum value of objective lens thickness is taken.

[0121] 4. Regarding the improved mask.

[0122] 1. The substrate of the improved mask is selected through routine experiments to be a sheet material with stable physical form, good thermoplasticity, good heat resistance and thermal conductivity, low density and appropriately thin thickness as the base material.

[0123] 2. The size of the improved mask substrate allows for the arrangement of several masks with cutting gaps.

[0124] 3. Through the conventional experiment of metal particle plating on the improved mask, a metal particle source with high density is selected; through the conventional experiment of metal particle plating, or by extending the plating time, or by repeated plating in intermittent XIE mode, or by alternating plating with two metal particle sources, the metal particle plating layer is thickened through multiple conventional experiments. The thickening coating process of this conventional experiment is the key process means that the selected X-ray can penetrate the beryllium of the objective lens but cannot penetrate the "metal particle plating" coating.

[0125] The implementation method of the present application is characterized by the technical features of "modified light source", "improved circuit diagram", "improved objective lens" and "improved mask" which are both mutually restrictive and complementary, and "one move affects the whole body", so technicians in the relevant technical field must conduct multiple routine experiments to select the best After all, this solution is a sensitive technical solution at present.

Claims

1. A method for improving ultra-short wavelength lithography of a lithography machine, involving "modified light source", "improved circuit diagram", "improved objective lens" and "improved mask" which are mutually restrictive and complementary, and the characteristics are: 1) The "changed light sources" are two X-ray light sources with different wavelengths, one is an X-ray light source with a relatively short wavelength, and the other is an X-ray light source with a relatively long wavelength; the X-ray light source with a relatively short wavelength has a wavelength as long as possible in the X-ray band through which the selected, thin metal beryllium "improved objective lens" is transmitted and focused to form an image; the X-ray light source with a relatively long wavelength has a wavelength as long as possible in the band through which the X-rays can only be adjusted to parallel lines after being transmitted through the selected, relatively thinner metal beryllium "improved objective lens"; 2) The "improved circuit diagram" is perpendicular to the optical axis of the "spherical convex lens of equal radius" and is more than twice the focal length; the substrate of the "improved circuit diagram" is a sheet material with stable physical form, good heat resistance and thermal conductivity, low density and as thin a thickness as possible as a base material; the slurry of the circuit line is printed on the substrate of the "improved circuit diagram"; the slurry is affinity, or affinity with the substrate through indirect media; the slurry printed on the substrate of the "improved circuit diagram" is a mixed slurry of high-density metal powder or high-density salt powder and a binder; the "improved circuit diagram" determines the safe thickness of the dry matter of the slurry printed by conventional experiments on the selected X-ray lithography; 3) The technical features of the "improved objective lens" are: It is prohibited to use the existing technology for precise correction of the objective lens surface; the "improved objective lens" uses two "improved objective lenses", one is a thin metal beryllium spherical convex lens with equal radius, and the other is a thinner metal beryllium spherical convex lens with equal radius; the thin metal beryllium spherical convex lens with equal radius can be transmitted by the X-rays with relatively short wavelengths and focused to form an image; the thinner metal beryllium spherical convex lens with equal radius can only be transmitted by the X-rays with relatively long wavelengths and then adjusted to parallel lines; 4) The technical features of the "improved mask" are as follows: its substrate is an organic sheet material which can be transmitted by the X-rays with relatively short wavelength, has thermoplastic physical characteristics, relatively stable mechanical properties and relatively low density; the practical surface of the organic sheet material is subjected to "metal particle plating"; the metal layer of the "metal particle plating" is a high-density metal plating layer which is not penetrated by the selected X-rays; the thickness of the metal plating layer of the "metal particle plating" is as large as possible; on the sheet substrate of the "improved mask", a plurality of identical "improved masks" can be arranged in an array of "improved masks" with divided gaps; the "improved mask" array is heat-treated into an "improved mask" semi-finished product with an "equal radius spherical surface" which is equal to or larger than a photolithography silicon "wafer"; on the convex surface of the "equal radius spherical surface" semi-finished product, the semiconductor circuit photolithography process is carried out N times; After the completion of the N-cycle process, the metal layer of the "metal particle plating" is etched, and the metal particles bombarded into the surface layer of the organic substrate and the organic sheet are moderately etched; the dirt is removed; the N-cycle process is to make a multi-layer semiconductor circuit; the semi-finished "improved mask" with the "metal particle plating" circuit layer on the surface is transformed into a flat "improved mask" genuine product through heat treatment and negative pressure flattening means; the "improved mask" genuine products of the N different circuits are then copied several times as genuine "improved masks" for rotary photolithography of silicon wafers; the genuine "improved masks" are respectively used as masks for gapless photolithography of each layer of circuits on the silicon wafer; the metal plating layer of the genuine "improved mask" faces downward, and is directly in close and gapless contact with the silicon wafer to realize photolithography; after each "improved mask" is photolithographic, it automatically gives way to the genuine "improved mask" to be photolithographic, and automatically cleans the dirt, and automatically rotates to wait for photolithography again.

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