Ring oscillator load capacitance acquisition method and device, storage medium and terminal

Abstract

The invention discloses a ring oscillator load capacitance acquisition method and device, a storage medium and a terminal. The method comprises the following steps: acquiring the load capacitance of each oscillation unit in a to-be-solved ring oscillator according to a preset load capacitance acquisition mode; the load capacitance acquisition process of the target oscillation unit comprises the steps of performing preset simulation on the target ring oscillator to acquire an electric energy signal and a current signal of the target oscillation unit, and acquiring unit resistance of the target oscillation unit based on the electric energy signal and the current signal; and performing preset simulation on the target ring oscillator to obtain the delay time of the target oscillation unit, and obtaining the load capacitance of the target oscillation unit based on the unit resistance and the delay time. The load capacitance is obtained by adopting a delay time backstepping mode through a mode of externally hanging the capacitor in the ring oscillator for simulation, so that the load capacitance in the oscillation unit can be obtained more quickly and more accurately.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic circuits, and in particular to a method and device for obtaining load capacitance of a ring oscillator, a storage medium and a terminal. Background Art

[0002] Oscillators are an important part of electronic systems, providing accurate clock signals for chips. Ring oscillators must have an odd number of inverters connected in series to form a closed loop (that is, the last output is exactly the initial input). They are widely used due to their simple structure. The main characteristics of ring oscillators usually include: delay time, frequency, and power consumption.

[0003] The influence of the ring oscillator on the delay time (delay) comes from the resistance and effective capacitance of the device itself. This type of delay is also called RC-delay. The resistance of the inverter in the ring oscillator is determined by the device size, while the capacitance value (i.e., load capacitance) needs to consider the wiring capacitance, gate-drain capacitance, diffusion capacitance, and fan-out gate capacitance after the inverter is connected. The gate-drain capacitance, diffusion capacitance, and fan-out gate capacitance can be obtained through simulation, but the wiring capacitance needs to be obtained by calculating its wiring area capacitance in the layout. However, the wiring area is often non-rectangular, which can easily cause cognitive and calculation errors in the wiring capacitance calculation process, thereby causing distortion in the wiring capacitance calculation. At the same time, the existing load capacitance acquisition process is complicated and cumbersome and requires the use of general analog programs for integrated circuits.

[0004] Therefore, there is an urgent need for a method for obtaining the load capacitance of a ring oscillator with high accuracy and a simple acquisition process. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present application is to provide a method and device for obtaining the load capacitance of a ring oscillator, a storage medium and a terminal, so as to solve the problem that the existing method for obtaining the load capacitance of a ring oscillator is prone to calculation distortion due to cognitive and calculation errors, and the process is cumbersome and complicated and requires calling a general analog program of an integrated circuit.

[0006] In a first aspect, the present application provides a method for obtaining a ring oscillator load capacitance, comprising:

[0007] Obtaining the load capacitance of each oscillation unit in the ring oscillator to be solved according to a preset load capacitance obtaining method;

[0008] Wherein, obtaining the load capacitance of the target oscillation unit in the ring oscillator to be solved according to the preset load capacitance obtaining method includes:

[0009] Performing a preset simulation on the target ring oscillator to obtain an electric energy signal and a current signal of the target oscillation unit, and obtaining a unit resistance of the target oscillation unit based on the electric energy signal and the current signal;

[0010] Performing a preset simulation on the target ring oscillator to obtain a delay time of the target oscillation unit, and obtaining a load capacitance of the target oscillation unit based on the unit resistance and the delay time;

[0011] Among them, the target oscillation unit is any one of the oscillation units in the ring oscillator to be solved, and the target ring oscillator is formed by connecting an external capacitor in series after each oscillation unit in the ring oscillator to be solved. When performing a preset simulation on the target ring oscillator, the capacitance values ​​of all the external capacitors in the target ring oscillator need to be set to zero.

[0012] In an embodiment of the present application, the oscillation unit is a CMOS inverter, and the CMOS inverter includes a PMOS tube and an NMOS tube connected to a common source.

[0013] In one embodiment of the present application, a preset simulation is performed on a target ring oscillator to obtain an electric energy signal and a current signal of a target oscillation unit, and the step of obtaining a unit resistance of the target oscillation unit based on the electric energy signal and the current signal includes:

[0014] Performing a preset simulation on the target ring oscillator to obtain a P-type power signal and a P-type current signal of a PMOS tube in a target oscillation unit, and obtaining a P-type unit resistance of the PMOS tube based on the P-type power signal and the P-type current signal;

[0015] Performing a preset simulation on the target ring oscillator to obtain an N-type power signal and an N-type current signal of an NMOS tube in a target oscillation unit, and obtaining an N-type unit resistance of the NMOS tube based on the N-type power signal and the N-type current signal;

[0016] The P-type unit resistance and the N-type unit resistance are summed to obtain the unit resistance of the target oscillation unit.

[0017] In one embodiment of the present application, the step of performing a preset simulation on the target ring oscillator to obtain the delay time of the target oscillation unit includes:

[0018] Performing a preset simulation on a target ring oscillator to obtain a low-to-high potential delay time of a first-stage oscillation unit in the target ring oscillator;

[0019] Performing a preset simulation on a target ring oscillator to obtain a high-to-low potential delay time of a last-stage oscillation unit in the target ring oscillator;

[0020] The delay time of the target oscillation unit is acquired based on the delay time from the low potential to the high potential of the first-stage oscillation unit and the delay time from the high potential to the low potential of the last-stage oscillation unit.

[0021] In one embodiment of the present application, obtaining the delay time of the target oscillation unit based on the low-to-high potential delay time of the first-stage oscillation unit and the high-to-low potential delay time of the last-stage oscillation unit includes:

[0022] One half of the sum of the delay time from low to high potential of the first-stage oscillation unit and the delay time from high to low potential of the last-stage oscillation unit is used as the delay time of the target oscillation unit.

[0023] In one embodiment of the present application, a SPICE Model is used to perform a preset simulation on a target ring oscillator.

[0024] In an embodiment of the present application, acquiring the load capacitance of the target oscillation unit based on the unit resistance and the delay time includes:

[0025] The load capacitance of the target oscillation unit is obtained based on a load capacitance calculation formula, where the load capacitance calculation formula is:

[0026] Ctotal=Tpd / (0.69*Rtotal)

[0027] Wherein, Ctotal is the load capacitance of the target oscillation unit, Tpd is the delay time of the target oscillation unit, and Rtotal is the unit resistance of the target oscillation unit.

[0028] In a second aspect, the present application provides a ring oscillator load capacitance acquisition device, including a load capacitance acquisition module;

[0029] The load capacitance acquisition module is used to acquire the load capacitance of each oscillation unit in the ring oscillator to be solved according to a preset load capacitance acquisition method;

[0030] Wherein, obtaining the load capacitance of the target oscillation unit in the ring oscillator to be solved according to the preset load capacitance obtaining method includes:

[0031] Performing a preset simulation on the target ring oscillator to obtain an electric energy signal and a current signal of the target oscillation unit, and obtaining a unit resistance of the target oscillation unit based on the electric energy signal and the current signal;

[0032] Performing a preset simulation on the target ring oscillator to obtain a delay time of the target oscillation unit, and obtaining a load capacitance of the target oscillation unit based on the unit resistance and the delay time;

[0033] Among them, the target oscillation unit is any one of the oscillation units in the ring oscillator to be solved, and the target ring oscillator is formed by connecting an external capacitor in series after each oscillation unit in the ring oscillator to be solved. When performing a preset simulation on the target ring oscillator, the capacitance values ​​of all the external capacitors in the target ring oscillator need to be set to zero.

[0034] In a third aspect, the present application provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the method for obtaining the attached capacitance of the ring oscillator is implemented.

[0035] In a fourth aspect, the present application provides a terminal, including a memory, a processor, and a computer program stored in the memory, wherein the processor executes the computer program to implement the method for obtaining the attached capacitance of the ring oscillator.

[0036] Compared with the prior art, one or more embodiments of the above scheme may have the following advantages or beneficial effects:

[0037] The ring oscillator load capacitance acquisition method provided by the embodiment of the present invention is applied to improve the accuracy of the obtained complete load capacitance by solving the load capacitance of each oscillation unit in the ring oscillator separately. By simulating the external capacitor in the ring oscillator and obtaining the load capacitance in the form of delay time inversion, the load capacitance in the oscillation unit can be obtained faster and more accurately, and the obtained complete load capacitance can be used as a standard for the process deviation of the ring oscillator.

[0038] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0040] Figure 1 Shown is a flow chart of the sub-steps in the method for obtaining the load capacitance of a ring oscillator described in an embodiment of the present application.

[0041] Figure 2 The waveform diagram shows the delay time from low to high potential of the first-stage oscillation unit and the delay time from high to low potential of the last-stage oscillation unit in the method for obtaining the load capacitance of the ring oscillator described in the embodiment of the present application.

[0042] Figure 3Shown is a schematic diagram of the waveforms of a P-type power signal and a P-type current signal of an oscillation unit in the method for acquiring the load capacitance of a ring oscillator described in an embodiment of the present application.

[0043] Figure 4 Shown is a schematic diagram of the waveforms of an N-type power signal and an N-type current signal of an oscillation unit in the method for acquiring the load capacitance of a ring oscillator described in an embodiment of the present application.

[0044] Figure 5 Shown is a schematic diagram of the structure of a third-order ring oscillator in the method for obtaining the ring oscillator load capacitance according to an embodiment of the present application.

[0045] Figure 6 Shown is a schematic diagram of the structure of the ring oscillator load capacitance acquisition device described in an embodiment of the present application.

[0046] Figure 7 Shown is a schematic diagram of the structure of the terminal described in an embodiment of the present application. DETAILED DESCRIPTION

[0047] The following will describe the implementation methods of the present invention in detail with reference to the accompanying drawings and embodiments, so that the implementation process of how the present invention applies technical means to solve technical problems and achieve technical effects can be fully understood and implemented accordingly. It should be noted that as long as there is no conflict, the various embodiments of the present invention and the various features in the embodiments can be combined with each other, and the technical solutions formed are all within the protection scope of the present invention.

[0048] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present application, and thus the drawings only show components related to the present application rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed at will, and the component layout may also be more complicated.

[0049] The following embodiments of the present application provide a method and device for obtaining the load capacitance of a ring oscillator, a storage medium and a terminal, which solve the problem that the existing method for obtaining the load capacitance of a ring oscillator is prone to calculation distortion due to cognitive and calculation errors, and the process is cumbersome and complicated and requires calling a general analog program of an integrated circuit.

[0050] The following will describe in detail the principles and implementation methods of the ring oscillator load capacitance acquisition method and device, storage medium and terminal of the present embodiment in conjunction with the accompanying drawings, so that those skilled in the art can understand the ring oscillator load capacitance acquisition method and device, storage medium and terminal of the present embodiment without creative work.

[0051] refer to Figure 1 As shown, this embodiment provides a method for obtaining a ring oscillator load capacitance, including:

[0052] Step S101 : obtaining the load capacitance of each oscillation unit in the ring oscillator to be solved according to a preset load capacitance obtaining method.

[0053] The method of setting any one oscillation unit in the ring oscillator to be solved as a target oscillation unit and obtaining the load capacitance of the target oscillation unit according to a preset load capacitance obtaining method specifically includes the following sub-steps.

[0054] Sub-step S1011 , performing a preset simulation on the target ring oscillator to obtain a power signal and a current signal of the target oscillation unit, and obtaining a unit resistance of the target oscillation unit based on the power signal and the current signal.

[0055] Sub-step S1012 , performing a preset simulation on the target ring oscillator to obtain a delay time of the target oscillation unit, and obtaining a load capacitance of the target oscillation unit based on the unit resistance and the delay time.

[0056] The target ring oscillator is formed by connecting an external capacitor in series behind each oscillation unit in the ring oscillator to be solved. When performing preset simulation on the target ring oscillator, the capacitance values ​​of all external capacitors in the target ring oscillator need to be set to zero.

[0057] The ring oscillator load capacitance acquisition method provided by the embodiment of the present invention improves the accuracy of the acquired complete load capacitance by solving the load capacitance of each oscillation unit in the ring oscillator separately. By simulating the external capacitor in the ring oscillator and acquiring the load capacitance in the form of delay time inversion, the load capacitance in the oscillation unit can be obtained faster and more accurately, and the acquired complete load capacitance can be used as a standard for the process deviation of the ring oscillator.

[0058] The steps in the tapping signal recognition method of this embodiment are described in detail below.

[0059] Step S101 : obtaining the load capacitance of each oscillation unit in the ring oscillator to be solved according to a preset load capacitance obtaining method.

[0060] Generally, a ring oscillator includes an odd number of oscillation units connected in series, and the input end of the first oscillation unit is connected to the output end of the last oscillation unit to form a ring connection. The ring oscillator for which the load capacitance is to be solved is set as the ring oscillator to be solved. In this embodiment, each oscillation unit in the ring oscillator to be solved is solved separately using a preset load capacitance acquisition method to obtain the load capacitance of each oscillation unit in the ring oscillator to be solved.

[0061] It should be noted that when the structural devices of all oscillation units in the ring oscillator to be solved are exactly the same, the load capacitance of any oscillation unit in the ring oscillator to be solved can be obtained by a preset load capacitance acquisition method. However, in actual use, the oscillation units in the ring oscillator may be different, and there may be slight deviations due to device performance issues. Therefore, the method of solving the load capacitance of all oscillation units separately and then summing them is more accurate than the above method.

[0062] In an embodiment of the present application, the oscillation unit is a CMOS inverter, and the CMOS inverter includes a PMOS transistor and an NMOS transistor connected to a common source.

[0063] In order to further illustrate the process of obtaining the load capacitance of the oscillator unit in the ring oscillator to be solved, the present embodiment sets any one of the oscillator units in the ring oscillator to be solved as the target oscillator unit, and then takes the target oscillator unit as an example to illustrate the process of obtaining the load capacitance of the oscillator unit in the ring oscillator to be solved. Specifically, obtaining the load capacitance of the target oscillator unit in the ring oscillator to be solved according to the preset load capacitance obtaining method includes sub-step S1011 and sub-step S1012.

[0064] First, an external capacitor is connected in series after each oscillation unit in the ring oscillator to be solved to form a target ring oscillator. The introduction of the external capacitor is to obtain the load capacitance of the target oscillation unit by using the delay time inversion method when simulating the target ring oscillator. The oscillation unit is set to a CMOS inverter, and the following specific settings are made for sub-steps S1011 and S1012.

[0065] Sub-step S1011 , performing a preset simulation on the target ring oscillator to obtain an electric energy signal and a current signal of the target oscillation unit, and obtaining a unit resistance of the target oscillation unit based on the electric energy signal and the current signal.

[0066] Specifically, the target ring oscillator is simulated by simulating the analog device, and the capacitance values ​​of all external capacitors in the target ring oscillator are set to zero during the simulation process. The P-type power signal and the P-type current signal of the PMOS tube in the target oscillation unit are obtained from the simulation data, and the N-type power signal and the N-type current signal of the NMOS tube in the target oscillation unit are obtained at the same time. The schematic diagram of the P-type power signal and the P-type current signal of the PMOS tube in the target oscillation unit is shown in FIG. Figure 3 As shown, the schematic diagram of the N-type power signal and N-type current signal of the NMOS tube is as follows Figure 4As shown. Based on the P-type power signal of the PMOS tube in the target oscillation unit, the power of the PMOS tube can be obtained, and then the resistance value of the PMOS tube is calculated based on the power of the PMOS tube and the P-type current signal, and it is used as the P-type unit resistance of the PMOS tube. Similarly, based on the N-type power signal of the NMOS tube in the target oscillation unit, the power of the NMOS tube can be obtained, and then the resistance value of the NMOS tube is calculated based on the power of the NMOS tube and the N-type current signal, and it is used as the N-type unit resistance of the NMOS tube.

[0067] Finally, the P-type unit resistance of the PMOS tube and the N-type unit resistance of the NMOS tube in the target ring oscillator are summed, that is, the unit resistance of the target ring oscillator is obtained.

[0068] In an embodiment of the present application, since the SPICE Model is a common and commonly used oscillator simulation device in the field, the present embodiment may use the SPICE Model to perform a preset simulation on the target ring oscillator.

[0069] Sub-step S1012 , performing a preset simulation on the target ring oscillator to obtain a delay time of the target oscillation unit, and obtaining a load capacitance of the target oscillation unit based on the unit resistance and the delay time.

[0070] Specifically, the target ring oscillator is simulated by simulating an analog device, and the capacitance values ​​of all external capacitors in the target ring oscillator are set to zero during the simulation process. Figure 2 As shown, the original waveform and delayed waveform of the target ring oscillator can be obtained through simulation, wherein the delay time from low potential to high potential and from high potential to low potential are both caused by the oscillation unit in the target ring oscillator. Therefore, the delay time from low potential to high potential of the waveform can be obtained based on the simulation waveform diagram, and it can be used as the delay time from low potential to high potential of the first-level oscillation unit in the target oscillation unit; at the same time, the delay time from high potential to low potential of the waveform can also be obtained based on the simulation waveform diagram, and it can be used as the delay time from high potential to low potential of the last-level oscillation unit in the target oscillation unit.

[0071] Finally, the delay time of the target oscillation unit is obtained based on the low-to-high potential delay time of the first-stage oscillation unit and the high-to-low potential delay time of the last-stage oscillation unit. Further, the low-to-high potential delay time of the first-stage oscillation unit and the high-to-low potential delay time of the last-stage oscillation unit are summed, and half of the sum is taken as the delay time of the target oscillation unit. The delay time of the target oscillation unit can be expressed as the following formula:

[0072] Tpd = (TpHL + TpLH) / 2 (1)

[0073] Among them, Tpd is the delay time of the target oscillation unit, TpHL is the delay time from high to low potential of the last oscillation unit, and TpLH is the delay time from low to high potential of the first oscillation unit.

[0074] Then, the load capacitance of the target oscillation unit is obtained based on the obtained unit resistance and delay time of the target ring oscillator. The specific calculation formula of the load capacitance of the target oscillation unit is:

[0075] Ctotal = Tpd / (0.69*Rtotal) (2)

[0076] Wherein, Ctotal is the load capacitance of the target oscillation unit, Tpd is the delay time of the target oscillation unit, and Rtotal is the unit resistance of the target oscillation unit.

[0077] The corresponding load capacitance of any oscillating unit in the ring oscillator to be solved can be obtained based on the above sub-steps S1011 and S1012, and then the load capacitances of all oscillating units in the ring oscillator to be solved can be obtained.

[0078] To further illustrate the process of obtaining the load capacitance of the target oscillation unit, the process of obtaining the load capacitance of a single oscillation unit in a third-order ring oscillator is taken as an example for explanation.

[0079] In the third-order ring oscillator, an external capacitor is connected in series after each oscillation unit. The third-order ring oscillator after adding the external capacitor is as follows Figure 5 As shown. Specifically, the added external capacitors are capacitor C0, capacitor C1 and capacitor C2. Then, the 3rd-order ring oscillator after adding the external capacitors is simulated by SPICE Model, and the capacitance values ​​of the above capacitors C0, capacitor C1 and capacitor C2 are set to zero during the simulation process.

[0080] The first-stage oscillation unit in the 3rd-order ring oscillator is set as the load capacitance oscillation unit to be calculated, then the P-type power signal and P-type current signal of the PMOS tube in the first-stage oscillation unit are obtained based on the simulation data, and the P-type unit resistance of the PMOS tube is obtained based on the P-type power signal and the P-type current signal; at the same time, the N-type power signal and N-type current signal of the NMOS tube in the first-stage oscillation unit are obtained based on the simulation data, and the N-type unit resistance of the NMOS tube is obtained based on the N-type power signal and the N-type current signal. Table 1 shows the relevant parameters for obtaining the P-type unit resistance and the N-type unit resistance. The size of the PMOS tube in the above-mentioned first-stage oscillation unit is set to Wp=240nm, Lp=30nm, and the size of the NMOS tube is set to Wn=120nm, Ln=30nm.

[0081] Table 1

[0082]

[0083] At the same time, based on the simulation data, the low-to-high potential delay time of the first-stage oscillation unit and the high-to-low potential delay time of the third oscillation unit are obtained, and the low-to-high potential delay time and the high-to-low potential delay time are summed and divided by 2 to obtain the delay time of the oscillation unit.

[0084] The unit resistance of the first-stage oscillator unit is obtained based on the P-type unit resistance of the PMOS tube and the N-type unit resistance of the NMOS tube. Finally, the load capacitance of the first-stage oscillator unit is obtained based on the above formula (2). The relevant parameters of the load capacitance of the first-stage oscillator unit are shown in Table 2.

[0085] Table 2

[0086]

[0087]

[0088] The ring oscillator load capacitance acquisition method provided by the embodiment of the present invention improves the accuracy of the acquired complete load capacitance by solving the load capacitance of each oscillation unit in the ring oscillator separately. By simulating the external capacitor in the ring oscillator and acquiring the load capacitance in the form of delay time inversion, the load capacitance in the oscillation unit can be obtained faster and more accurately, and the acquired complete load capacitance can be used as a standard for the process deviation of the ring oscillator.

[0089] refer to Figure 6 As shown, this embodiment provides a ring oscillator load capacitance acquisition device, including a load capacitance acquisition module.

[0090] The load capacitance acquisition module is used to acquire the load capacitance of each oscillation unit in the ring oscillator to be solved according to a preset load capacitance acquisition method.

[0091] Wherein, obtaining the load capacitance of the target oscillation unit in the ring oscillator to be solved according to the preset load capacitance obtaining method includes:

[0092] A preset simulation is performed on the target ring oscillator to obtain an electric energy signal and a current signal of the target oscillation unit, and a unit resistance of the target oscillation unit is obtained based on the electric energy signal and the current signal.

[0093] A preset simulation is performed on the target ring oscillator to obtain a delay time of the target oscillation unit, and a load capacitance of the target oscillation unit is obtained based on the unit resistance and the delay time.

[0094] Among them, the target oscillation unit is any oscillation unit in the ring oscillator to be solved, and the target ring oscillator is formed by connecting an external capacitor in series after each oscillation unit in the ring oscillator to be solved. When performing a preset simulation on the target ring oscillator, the capacitance values ​​of all external capacitors in the target ring oscillator need to be set to zero.

[0095] The ring oscillator load capacitance acquisition device provided by the embodiment of the present invention improves the accuracy of the acquired complete load capacitance by solving the load capacitance of each oscillation unit in the ring oscillator separately. By simulating the external capacitance in the ring oscillator and acquiring the load capacitance in the form of delay time inversion, the load capacitance in the oscillation unit can be obtained faster and more accurately, and the acquired complete load capacitance can be used as a standard for the process deviation of the ring oscillator.

[0096] The present application embodiment also provides a computer-readable storage medium. A person of ordinary skill in the art can understand that all or part of the steps in the above-mentioned embodiment method can be completed by instructing the processor through a program, and the program can be stored in a computer-readable storage medium, and the storage medium is a non-transitory medium, such as a random access memory, a read-only memory, a flash memory, a hard disk, a solid-state hard disk, a magnetic tape, a floppy disk, an optical disc, and any combination thereof. The above-mentioned storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or a data center that includes one or more available media integrated. The available medium can be a magnetic medium (for example, a floppy disk, a hard disk, a tape), an optical medium (for example, a digital video disc (DVD)), or a semiconductor medium (for example, a solid-state disk (SSD)), etc.

[0097] like Figure 7 As shown, an embodiment of the present application provides a terminal.

[0098] The terminal of this embodiment includes a processor and a memory connected to each other; the memory is used to store computer programs, and the processor is used to execute the computer programs stored in the memory, so that all or part of the steps in the method of the above embodiment can be implemented when the terminal executes.

[0099] The beneficial effects of all or part of the steps of the method in the above embodiment are the same as the beneficial effects obtained by applying the terminal provided by the embodiment of the present invention, and will not be described in detail here.

[0100] It should be noted that the memory may include random access memory (RAM) and may also include non-volatile memory, such as at least one disk storage. Similarly, the processor may also be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it may also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components.

[0101] Although the embodiments disclosed in the present invention are as above, the contents described are only embodiments adopted for facilitating the understanding of the present invention and are not intended to limit the present invention. Any technician in the technical field to which the present invention belongs can make any modifications and changes in the form and details of the implementation without departing from the spirit and scope disclosed in the present invention, but the protection scope of the present invention shall still be subject to the scope defined in the attached claims.

Claims

1. A method for obtaining a ring oscillator load capacitance, comprising: Obtaining the load capacitance of each oscillation unit in the ring oscillator to be solved according to a preset load capacitance obtaining method; Wherein, obtaining the load capacitance of the target oscillation unit in the ring oscillator to be solved according to the preset load capacitance obtaining method includes: Performing a preset simulation on the target ring oscillator to obtain an electric energy signal and a current signal of the target oscillation unit, and obtaining a unit resistance of the target oscillation unit based on the electric energy signal and the current signal; Performing a preset simulation on the target ring oscillator to obtain a delay time of the target oscillation unit, and obtaining a load capacitance of the target oscillation unit based on the unit resistance and the delay time; Among them, the target oscillation unit is any one of the oscillation units in the ring oscillator to be solved, and the target ring oscillator is formed by connecting an external capacitor in series after each oscillation unit in the ring oscillator to be solved. When performing a preset simulation on the target ring oscillator, the capacitance values ​​of all the external capacitors in the target ring oscillator need to be set to zero.

2. The method for obtaining load capacitance according to claim 1, characterized in that: The oscillation unit is a CMOS inverter, and the CMOS inverter includes a PMOS tube and an NMOS tube connected with a common source.

3. The method for obtaining load capacitance according to claim 2, characterized in that: The target ring oscillator is simulated to obtain a power signal and a current signal of the target oscillation unit, and the step of obtaining the unit resistance of the target oscillation unit based on the power signal and the current signal includes: Performing a preset simulation on the target ring oscillator to obtain a P-type power signal and a P-type current signal of a PMOS tube in a target oscillation unit, and obtaining a P-type unit resistance of the PMOS tube based on the P-type power signal and the P-type current signal; Performing a preset simulation on the target ring oscillator to obtain an N-type power signal and an N-type current signal of an NMOS tube in a target oscillation unit, and obtaining an N-type unit resistance of the NMOS tube based on the N-type power signal and the N-type current signal; The P-type unit resistance and the N-type unit resistance are summed to obtain the unit resistance of the target oscillation unit.

4. The method for obtaining load capacitance according to claim 2, characterized in that: The step of performing a preset simulation on the target ring oscillator to obtain the delay time of the target oscillation unit includes: Performing a preset simulation on a target ring oscillator to obtain a low-to-high potential delay time of a first-stage oscillation unit in the target ring oscillator; Performing a preset simulation on a target ring oscillator to obtain a high-to-low potential delay time of a last-stage oscillation unit in the target ring oscillator; The delay time of the target oscillation unit is acquired based on the delay time from the low potential to the high potential of the first-stage oscillation unit and the delay time from the high potential to the low potential of the last-stage oscillation unit.

5. The method for obtaining load capacitance according to claim 4, characterized in that: Acquiring the delay time of the target oscillation unit based on the low-to-high potential delay time of the first-stage oscillation unit and the high-to-low potential delay time of the last-stage oscillation unit includes: One half of the sum of the delay time from low to high potential of the first-stage oscillation unit and the delay time from high to low potential of the last-stage oscillation unit is used as the delay time of the target oscillation unit.

6. The method for obtaining load capacitance according to claim 1, characterized in that: Acquiring the load capacitance of the target oscillation unit based on the unit resistance and the delay time includes: The load capacitance of the target oscillation unit is obtained based on a load capacitance calculation formula, where the load capacitance calculation formula is: Ctotal=Tpd / (0.69*Rtotal) Wherein, Ctotal is the load capacitance of the target oscillation unit, Tpd is the delay time of the target oscillation unit, and Rtotal is the unit resistance of the target oscillation unit.

7. The method for obtaining load capacitance according to claim 1, characterized in that: Perform preset simulation of the target ring oscillator using SPICE Model.

8. A ring oscillator load capacitance acquisition device, characterized in that: Including a load capacitance acquisition module; The load capacitance acquisition module is used to acquire the load capacitance of each oscillation unit in the ring oscillator to be solved according to a preset load capacitance acquisition method; Wherein, obtaining the load capacitance of the target oscillation unit in the ring oscillator to be solved according to the preset load capacitance obtaining method includes: Performing a preset simulation on the target ring oscillator to obtain an electric energy signal and a current signal of the target oscillation unit, and obtaining a unit resistance of the target oscillation unit based on the electric energy signal and the current signal; Performing a preset simulation on the target ring oscillator to obtain a delay time of the target oscillation unit, and obtaining a load capacitance of the target oscillation unit based on the unit resistance and the delay time; Among them, the target oscillation unit is any one of the oscillation units in the ring oscillator to be solved, and the target ring oscillator is formed by connecting an external capacitor in series after each oscillation unit in the ring oscillator to be solved. When performing a preset simulation on the target ring oscillator, the capacitance values ​​of all the external capacitors in the target ring oscillator need to be set to zero.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method for obtaining the load capacitance of a ring oscillator according to any one of claims 1 to 7 is implemented.

10. A terminal comprising a memory, a processor and a computer program stored in the memory, characterized in that: The processor executes the computer program to implement the method for obtaining the load capacitance of a ring oscillator according to any one of claims 1 to 7.

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