Impedance wall amplifier nonlinear beam-wave interaction simulation method and system

Abstract

The invention discloses a nonlinear beam-wave interaction simulation method and system for an impedance wall amplifier, and belongs to the technical field of vacuum electronics. Physical quantities such as energy exchange, line field power, electron speed, current density and charge density are iteratively calculated according to a space step length; the cavity-by-cavity calculation of the electron beam from the starting position of the interaction area of the speed regulation tube to the ending position of the interaction area is completed, and the simulation of the impedance wall beam-wave interaction process can be completed once, so that the performance parameter indexes such as output power and electronic efficiency are obtained, and the theoretical design blank of the current impedance wall amplifier is filled. And meanwhile, the problem that electromagnetic simulation software cannot be directly used for simulation is also solved.

Description

Technical Field

[0001] The present application relates to the technical field of vacuum electronics, and in particular to a method and system for simulating nonlinear injection-wave interaction of an impedance-wall amplifier. Background Art

[0002] The impedance wall amplifier is a microwave vacuum electronic device used for signal power amplification. It has a gain comparable to that of a traveling wave tube and a wider bandwidth. Its working mechanism is different from that of traditional microwave tubes such as traveling wave tubes. The line field has no effective interaction with the electron beam. The further clustering of the electron beam depends on the interaction between the electron beam and the space charge field excited by the surface plasma. Therefore, although the line field loss of traditional vacuum electronic devices in the millimeter wave and terahertz bands increases, resulting in a decrease in output power, the gain of the impedance wall amplifier can be unaffected. The impedance wall amplifier has other advantages. The signal input is effectively isolated from the output by a lossy circuit impedance wall, so that parasitic oscillations due to internal feedback are essentially absent.

[0003] Due to the inherent defects of the impedance wall structure itself in exciting space charge waves, and the rapid attenuation of electromagnetic signals after entering the impedance wall, in order to stimulate the high-frequency oscillation of the electron beam, other circuits are required to pre-modulate the electron beam and extract the signal in the same way after the electron beam passes through the impedance wall. The schematic diagram of the impedance wall amplifier is shown in the figure. Figure 1 When the input and output systems at both ends are coupled cavities, it is an impedance wall klystron.

[0004] Currently, there is only a small signal theory for impedance wall amplifiers. This theory calculates the growth rate of space charge waves based on wall admittance. The interaction between the space charge field and the electron beam and how to further cluster the electron beam are not discussed, and the theory cannot be used to obtain the final electromagnetic wave output power. It is also difficult to directly use electromagnetic simulation software to simulate impedance wall amplifiers. This is because the thickness of the semiconductor film as an impedance wall is usually in the micron range, which is much smaller than the device size. If there are enough grids in the semiconductor film, the grids of the entire device will be too many for the computer to calculate. Summary of the invention

[0005] In order to solve the problems that there is currently no available theoretical design method for impedance wall amplifiers and that electromagnetic simulation software cannot be used directly for simulation, the present application proposes a method and system for simulating the nonlinear injection-wave interaction of an impedance wall amplifier. The present application iteratively calculates physical quantities such as energy exchange, line field power, electron velocity, current density, and charge density according to spatial steps to complete the entire calculation of the electron beam starting from the input slow-wave line, gradually advancing, entering the impedance wall, and ending at the output slow-wave line, thereby simulating the impedance wall injection-wave interaction process and obtaining performance parameter indicators such as output power and electronic efficiency, filling the current theoretical design gap of impedance wall amplifiers and solving the problem that electromagnetic simulation software cannot be used for simulation.

[0006] This application is implemented through the following technical solutions:

[0007] A method for simulating nonlinear injection-wave interaction of an impedance wall amplifier, the method comprising:

[0008] Solving the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field to obtain the line field power change, and obtaining the line field power and amplitude at the current space step according to the line field power change;

[0009] According to the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field, the changed electron velocity is calculated, and the electron velocity at the current space step is updated according to the electron velocity;

[0010] According to the electron velocity and position at the current space step, the current density and charge density at the current space step are calculated;

[0011] According to the current density and charge density at the current space step, the space charge field at the current space step is calculated, that is, the calculation at the current space step is completed;

[0012] Repeat the above process, calculate the electron beam cavity by cavity from the starting position of the interaction zone of the klystron until the end position of the interaction zone, and the simulation of the beam-wave interaction process is completed.

[0013] In some embodiments, the simulation method further comprises, before performing the simulation calculation step:

[0014] Initialize the line field power, working current, coupling impedance and phase velocity of the slow-wave line, and set the structural parameters of the impedance wall.

[0015] In some implementations, the line field power is equal to the transmitted power plus the power change, and the power change acquisition process includes:

[0016] Obtain the energy changes caused by the interaction between the electron beam and the circuit field;

[0017] Obtain the energy change caused by the interaction between the electron beam and the space charge field;

[0018] The two parts of energy change are added together to obtain the total energy change, and the energy changes of all macro particles in a period are added together and divided by the period to obtain the power change;

[0019] The magnitude of the power generated is calculated by defining the coupling impedance.

[0020] In some embodiments, the electron velocity calculation formula is:

[0021]

[0022] Among them, v i+1,j is the speed of the electron in the next step, c is the speed of light, m 0 is the electron rest mass, m i,j is the relativistic mass of the electron, Δε i,j For energy exchange.

[0023] In some embodiments, the current density and charge density calculation process includes:

[0024] Calculate the current using the three-point filtering method;

[0025] The charge density is calculated according to the current; wherein, the charge density calculation process needs to be divided by the sorted speed.

[0026] In some embodiments, the space charge field calculation process includes:

[0027] Substituting the current density and charge density into the active Helmholtz equation, a special solution of the space charge field is obtained;

[0028] The space charge field at the electron beam channel position is obtained by solving the homogeneous Helmholtz equation and matching the fields in each region through the continuity condition of the field on the common boundary.

[0029] In some embodiments, the method of obtaining the space charge field at the electron beam channel position by solving the homogeneous Helmholtz equation and matching the fields in each region through the continuity condition of the field on the common boundary comprises:

[0030] By solving the passive Helmholtz equation in cylindrical coordinates, the general solution of the space charge field is obtained;

[0031] The total space charge field is obtained by adding the general solution of the space charge field to the special solution of the space charge field;

[0032] The Drude model is used to equivalently represent the relative dielectric constant of the semiconductor in the total space charge field;

[0033] The space charge field at the electron beam channel position is obtained by solving the homogeneous Helmholtz equation and matching the fields in each region through the continuity condition of the field on the common boundary.

[0034] In a second aspect, the present application proposes a simulation system for nonlinear injection wave interaction of an impedance wall amplifier, the simulation system comprising:

[0035] A power update module, the power update module is used to solve the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field, obtain the line field power change, and obtain the line field power and amplitude at the current space step according to the line field power change;

[0036] A speed update module, the speed update module is used to calculate the changed electron speed according to the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field, and update the electron speed at the current space step according to the electron speed;

[0037] A density update module, wherein the density update module is used to calculate the current density and the charge density at the current spatial step;

[0038] A space charge field calculation module, wherein the space charge field calculation module is used to calculate the space charge field at the current space step;

[0039] And, a simulation module, which is used to call the power update module, the speed update module, the density update module and the space charge field calculation module to calculate the electron beam cavity by cavity from the starting position of the interaction zone of the speed control tube to the end position of the interaction zone, thereby completing a simulation of the beam-wave interaction process.

[0040] In a third aspect, the present application proposes a computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the above method when executing the computer program.

[0041] In a fourth aspect, the present application proposes a computer-readable storage medium having a computer program stored thereon, wherein the computer program implements the steps of the above method when executed by a processor.

[0042] The present application proposes a method and system for simulating the nonlinear injection wave interaction of an impedance wall amplifier. By iteratively calculating physical quantities such as energy exchange, line field power, electron velocity, current density, and charge density according to the spatial step length, the electron beam is calculated cavity by cavity from the starting position of the interaction zone of the speed control tube to the end position of the interaction zone, and the simulation of the impedance wall injection wave interaction process can be completed once, thereby obtaining performance parameter indicators such as output power and electronic efficiency, filling the gap in the current theoretical design of impedance wall amplifiers, and also solving the problem that electromagnetic simulation software cannot be directly used for simulation;

[0043] The present application proposes a method and system for simulating nonlinear injection wave interaction of an impedance wall amplifier. When the impedance wall injection wave interacts, further electron beam clustering can be achieved by relying solely on the space charge field. Therefore, the line field can be ignored during the injection wave interaction simulation process, which is easy to implement. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The drawings described herein are used to provide a further understanding of the embodiments of the present application, constitute a part of the present application, and do not constitute a limitation on the embodiments of the present application. In the drawings:

[0045] Figure 1 It is a schematic diagram of the impedance wall amplifier structure;

[0046] Figure 2 A flow chart of the simulation method proposed in the embodiment of the present application;

[0047] Figure 3 A block diagram of the simulation system proposed in the embodiment of the present application;

[0048] Figure 4 This is a graph showing the trend of space charge field phase shift in a 35GHz impedance wall amplifier as the electrical properties of the semiconductor film change;

[0049] Figure 5 Schematic diagram of AC charge density in a 35GHz impedance wall amplifier;

[0050] Figure 6 Schematic diagram of the high frequency line field power in the 35GHz impedance wall amplifier. DETAILED DESCRIPTION

[0051] In order to make the objectives, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with examples and drawings. The illustrative implementation scheme of the present application and its description are only used to explain the present application and are not intended to limit the present application.

[0052] Example 1

[0053] This embodiment proposes a method for simulating nonlinear injection-wave interaction of an impedance wall amplifier.

[0054] like Figure 2 As shown, the method proposed in this embodiment includes the following steps:

[0055] Step 1: Solve the energy exchange between the electron beam and the line field and the electron beam and the space charge field to obtain the line field power and amplitude. The line field power is equal to the transmitted power plus the power change, and the power change is determined by the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field.

[0056] Specifically, the calculation process of the line field power and amplitude in step 1 is as follows:

[0057] According to the grid division, the power of the line field at the i-th step is equal to the power at the i-1th step plus the power change at the i-1th step. Among them, the energy change generated by the interaction between the electron beam and the line field is: A total refers to the total field amplitude of the synthesis, is the synthesized phase, q Δt is the charge of the macroparticle, and Δz is the space step. At the same time, during the interaction between the electron beam and the space charge field, electromagnetic wave energy will be generated and transferred to the next step. The energy change is: Among them, A sp is the amplitude of the space charge field. The total energy change can be obtained by adding the two parts of energy change, and then integrated over a period (that is, directly adding up the energies of all macroparticles in a period) and divided by the period to obtain the power change.

[0058] The magnitude of the power generated is calculated by defining the coupling impedance:

[0059]

[0060] Among them, E z is the longitudinal electric field, β 0 is the propagation constant and P is the power.

[0061] Step 2, calculating the changed electron velocity according to the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field.

[0062] Specifically, in this step 2, the electron velocity calculation process is as follows:

[0063] The changed electron velocity is calculated by the aforementioned energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field. The electron velocity calculation formula is as follows:

[0064]

[0065] Among them, v i+1,jis the speed of the electron in the next step, c is the speed of light, m 0 is the electron rest mass, m i,j is the relativistic mass of the electron, Δε i,j For energy exchange.

[0066] Step 3, solve for the current density and charge density.

[0067] Specifically, in this step 3, the current is calculated using the three-point filtering method:

[0068]

[0069] The current density and charge density are calculated based on the current. The current density is S is the cross-sectional area of ​​the electron beam, and the charge density is I is the current, t i is the observation time, t is the arrival time, and ΔQ is the charge of the macroparticle.

[0070] In order to deal with the phenomenon of array out of bounds, a judgment is set during the loop. It should be noted that because the arrival times are sorted according to the time sequence when calculating the current, when solving the charge density from the current, it is necessary to divide it by the sorted speed v.

[0071] Step 4, solve the space charge field. Substituting the current density and charge density into the active Helmholtz equation, the special solution of the space charge field can be obtained. By solving the homogeneous Helmholtz equation and matching the fields in each region through the continuity conditions of the field on the common boundary, the space charge field at the electron beam channel position can be obtained.

[0072] Specifically, in this step 4, when the current and charge density grow exponentially with the longitudinal direction, the spatial Fourier series of the current and charge density require higher-order convergence. Therefore, in order to reduce the order and balance the calculation time and calculation accuracy, assuming that the beam interaction is stable, the time Fourier series of the current and charge density can be performed, and the exponential growth term can be separated from the series. In this way, the current density and charge density can be written in cylindrical coordinates as:

[0073]

[0074] Among them, J 0 is the DC current density, ρ 0 is the DC charge density, α is the growth factor, ω is the frequency, n is the Fourier series order, J n is the nth order amplitude of the AC current density, ρ n is the n-order amplitude of the AC charge density, β n is the equivalent wave number of the AC current density and charge density.

[0075] Substituting into the active Helmholtz equation, we can obtain:

[0076]

[0077] Here, k is the vacuum wave number.

[0078] Where:

[0079]

[0080] Among them, u 0 is the vacuum permeability, ε 0 is the dielectric constant of vacuum.

[0081] Assume that the special solution of the space charge field is expressed as:

[0082]

[0083] Among them, F n is the n-th order space charge field amplitude, is the space charge field phase.

[0084] Substituting into formula (5), we can get:

[0085]

[0086] In the formula

[0087]

[0088] Formula (8) can be written as:

[0089]

[0090] In the formula

[0091]

[0092] We can further get:

[0093]

[0094] The left side of equation (12) is in the form of Bessel equation, and the right side is in the form of power series. In order to obtain the analytical solution of space charge field, S n and F n ' is expressed as the product of Bessel functions and power series:

[0095]

[0096] Among them, J m is the m-th order Bessel function, A n,m,i and a n,m,i are coefficients, r iis a power series.

[0097] Substituting formula (13) into formula (12), we can obtain:

[0098]

[0099] Then the special solution of the space charge field is:

[0100]

[0101] Next, we solve the total space charge field of the general solution of the above space charge field.

[0102] In this embodiment, by solving the passive Helmholtz equation in the cylindrical coordinate system, the general solution of the space charge field can be obtained. After adding the special solution of the space charge field, the total space charge field is obtained as follows:

[0103]

[0104] Among them, A and B are coefficients, I and K are deformed Bessel functions, a is the electron beam radius, b is the electron beam channel radius, c is the inner diameter of the dielectric substrate, and d is the outer diameter of the dielectric substrate.

[0105]

[0106] Among them, k 0 is the vacuum wave number, ε 3 is the relative dielectric constant of the supporting medium, ε spr is the relative dielectric constant of the semiconductor, which is equivalent to the Drude model:

[0107]

[0108] Among them, ε ∞ is the dielectric constant when there are no free electrons, ω p is the plasma frequency, m * is the effective electron mass, N is the carrier concentration, e is the electron charge, ε 0 is the vacuum dielectric constant, γ is the relaxation frequency, γ = e / m * μ n , μ n is the migration rate.

[0109] Assuming Hz is 0, the radial space charge field can be obtained as:

[0110]

[0111] By solving the homogeneous Helmholtz equation and matching the fields in each region through the continuity condition of the field on the common boundary, the space charge field at the electron beam channel position can be obtained as:

[0112]

[0113] In the formula

[0114]

[0115]

[0116] Among them, K m is the m-order deformed Bessel function, K' m is the derivative of the m-th order deformed Bessel function.

[0117] In this embodiment, the electron motion in the semiconductor is equivalently represented as a complex dielectric constant using the Drude model. After boundary matching, the complex dielectric constant of the semiconductor can affect the phase of the space charge field. Therefore, the electron beam can be further clustered only by the interaction between the space charge field and the electron beam.

[0118] Step 5, initializing the working parameters and structural parameters, calculating the electron beam cavity by cavity from the starting position of the interaction zone of the speed control tube to the end position of the interaction zone, thus completing the simulation of the beam-wave interaction process and obtaining performance parameter indicators such as output power and electronic efficiency.

[0119] Specifically, in this step 5, the line field power, working current, coupling impedance of the slow wave line, phase velocity and other working parameters are first initialized, and the structural parameters of the impedance wall are set. Then, the electron beam is calculated cavity by cavity from the starting position of the interaction zone of the speed control tube until the end position of the interaction zone, and the simulation of the beam-wave interaction process can be completed, and the performance parameter indicators such as output power and electronic efficiency can be obtained.

[0120] In the process of interaction between the electron beam and the line field and space charge field, the line field power is updated in combination with step 1, and the electron velocity is updated in combination with step 2. The new current density and charge density are obtained by combining the updated electron velocity and position with step 3. The current space charge field is calculated using step 4, and the calculation on a certain space step is completed. Repeat the above process, starting from the input slow wave line, the electron beam is gradually advanced into the impedance wall until the output slow wave line ends, thereby completing a simulation of the beam-wave interaction process. The specific calculation process of the beam-wave interaction is as follows:

[0121] First, space and time are divided. One cycle of time is divided into M parts, and the electrons in each part of time are regarded as macroparticles. In this way, the physical quantities such as velocity, energy exchange, charge density and current density of each macroparticle at different positions (at each spatial step) can be calculated, and then iterated to the next spatial step. In the process of interaction between the electron beam and the line field and the space charge field, the line field power is updated in combination with step 1, and the electron velocity is updated in combination with step 2. The new current density and charge density are obtained by combining the updated electron velocity and position with step 3. The current space charge field is calculated using step 4, and the calculation at a certain spatial step is completed. Repeat the above process, starting from the input slow wave line, the electron beam is gradually advanced into the impedance wall until the output slow wave line ends.

[0122] When performing impedance wall injection wave interaction, the line field can be ignored. This is because the line field loss in the impedance wall is very large. The line field decays quickly after entering the impedance wall, and the line field phase velocity in the impedance wall is much higher than the electron beam velocity, so synchronous interaction is impossible. When the electron beam passes through the impedance wall, the information about the current modulation is stored in the impedance wall in the form of surface plasma. When the second half of the electron beam arrives, the surface plasma stored in the impedance wall causes the space charge field phase delay. Therefore, the phase delay of the space charge field can further cluster the electron beam by the space charge field itself.

[0123] This embodiment also proposes a nonlinear injection wave interaction simulation system for an impedance wall amplifier, such as Figure 3 As shown, the system proposed in this embodiment includes:

[0124] The power update module is used to solve the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field, obtain the line field power change, and thus update the line field power. The specific process is as described in step 1 above, and will not be repeated here.

[0125] The speed update module is used to calculate the changed electron speed according to the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field, so as to update the electron speed. The specific process is as described in step 2 above, and will not be described in detail here.

[0126] Density update module, which is used to calculate current density and charge density. The specific process is as described in step 3 above, and will not be repeated here.

[0127] The space charge field calculation module is used to calculate the space charge field at the current space step. The specific calculation process is as described in step 4 above, and will not be repeated here.

[0128] The simulation module includes an initialization unit, which is used to initialize the line power, working current, coupling impedance of the slow-wave line, phase velocity and other working parameters, set the structural parameters of the impedance wall, etc.; and also includes a calculation unit, which calls the power update module, the speed update module, the density update module and the space charge field calculation module to calculate the electron beam cavity by cavity from the starting position of the interaction zone of the speed control tube to the end position of the interaction zone, thereby completing a simulation of the beam-wave interaction process and obtaining performance parameter indicators such as output power and electronic efficiency.

[0129] Example 2

[0130] This embodiment adopts the impedance wall nonlinear injection wave interaction simulation technology proposed in the above embodiment to obtain the simulation results of the 35GHz impedance wall amplifier, as shown in FIG. Figure 4-6 shown.

[0131] in, Figure 4 The graph shows the trend of the phase shift of the space charge field in the 35GHz impedance wall amplifier as the electrical properties of the semiconductor film change. It can be seen from the figure that when the thickness of the semiconductor film is different, the required semiconductor conductivity is different, and the electron beam filling ratio will also affect the phase of the space charge field. Therefore, reasonable semiconductor parameters, electron beam and structural dimensions need to be set in different frequency bands so that the space charge field can be in a suitable phase and effectively interact with the electron beam.

[0132] Figure 5 The figure shows a schematic diagram of the AC charge density in the 35GHz impedance wall amplifier. The metal drift tube is the metal drift tube that replaces the impedance wall in the impedance wall amplifier, and the other parts remain unchanged. It can be seen from the figure that compared with the metal wall, the AC charge density of the electron beam in the impedance wall increases, reflecting the enhanced clustering. This verifies that although there is no synchronous interaction between the line field and the electron beam in both the metal wall and the impedance wall, the electron beam can further enhance the clustering due to the interaction between the electron beam and the space charge field in the impedance wall.

[0133] Figure 6 The schematic diagram of the high-frequency line field power in the 35GHz impedance wall amplifier is shown. As can be seen from the figure, the electron beam is clustered and enhanced after passing through the impedance wall, and quickly re-excites the high-frequency electromagnetic wave after entering the slow-wave line.

[0134] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented in one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that include computer-usable program code.

[0135] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0136] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0137] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process in the computer or other programmable device. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0138] The specific implementation methods described above further illustrate the purpose, technical solutions and beneficial effects of the present application in detail. It should be understood that the above description is only the specific implementation method of the present application and is not intended to limit the scope of protection of the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the scope of protection of the present application.

Claims

1. A method for simulating the nonlinear injection wave interaction of an impedance wall amplifier, characterized in that: The simulation method comprises: Solving the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field to obtain the line field power change, and obtaining the line field power and amplitude at the current space step according to the line field power change; According to the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field, the changed electron velocity is calculated, and the electron velocity at the current space step is updated according to the electron velocity; According to the electron velocity and position at the current space step, the current density and charge density at the current space step are calculated; According to the current density and charge density at the current space step, the space charge field at the current space step is calculated, that is, the calculation at the current space step is completed; Repeat the above process, calculate the electron beam cavity by cavity from the starting position of the interaction zone of the klystron until the end position of the interaction zone, and the simulation of the beam-wave interaction process is completed.

2. The method for simulating nonlinear injection-wave interaction of an impedance wall amplifier according to claim 1, characterized in that: In the simulation method, before the simulation calculation step, the following steps are also included: Initialize the line field power, working current, coupling impedance and phase velocity of the slow-wave line, and set the structural parameters of the impedance wall.

3. A method for simulating nonlinear injection-wave interaction of an impedance wall amplifier according to claim 1 or 2, characterized in that: The line field power is equal to the transmitted power plus the power change, and the power change acquisition process includes: Obtain the energy changes caused by the interaction between the electron beam and the circuit field; Obtain the energy change caused by the interaction between the electron beam and the space charge field; The two parts of energy change are added together to obtain the total energy change, and the energy changes of all macro particles in a period are added together and divided by the period to obtain the power change; The magnitude of the power generated is calculated by defining the coupling impedance.

4. A method for simulating nonlinear injection-wave interaction of an impedance wall amplifier according to claim 1 or 2, characterized in that: The electron velocity calculation formula is: Among them, v i+1,j is the speed of the electron in the next step, c is the speed of light, m0 is the rest mass of the electron, m i,j is the relativistic mass of the electron, Δε i,j For energy exchange.

5. A method for simulating nonlinear injection-wave interaction of an impedance wall amplifier according to claim 1 or 2, characterized in that: The current density and charge density calculation process includes: Calculate the current using the three-point filtering method; The charge density is calculated according to the current; wherein, the charge density calculation process needs to be divided by the sorted speed.

6. A method for simulating nonlinear injection-wave interaction of an impedance wall amplifier according to claim 1 or 2, characterized in that: The space charge field calculation process includes: Substituting the current density and charge density into the active Helmholtz equation, a special solution of the space charge field is obtained; The space charge field at the electron beam channel position is obtained by solving the homogeneous Helmholtz equation and matching the fields in each region through the continuity condition of the field on the common boundary.

7. The method for simulating nonlinear injection-wave interaction of an impedance wall amplifier according to claim 6, characterized in that: The method of solving the homogeneous Helmholtz equation and matching the fields in each region through the continuity condition of the field on the common boundary to obtain the space charge field at the electron beam channel position includes: By solving the passive Helmholtz equation in cylindrical coordinates, the general solution of the space charge field is obtained; The total space charge field is obtained by adding the general solution of the space charge field to the special solution of the space charge field; The Drude model is used to equivalently represent the relative dielectric constant of the semiconductor in the total space charge field; The space charge field at the electron beam channel position is obtained by solving the homogeneous Helmholtz equation and matching the fields in each region through the continuity condition of the field on the common boundary.

8. An impedance wall amplifier nonlinear injection wave interaction simulation system, characterized in that: The simulation system comprises: A power update module, the power update module is used to solve the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field, obtain the line field power change, and obtain the line field power and amplitude at the current space step according to the line field power change; A speed update module, the speed update module is used to calculate the changed electron speed according to the energy exchange between the electron beam and the line field and the energy exchange between the electron beam and the space charge field, and update the electron speed at the current space step according to the electron speed; A density update module, wherein the density update module is used to calculate the current density and the charge density at the current spatial step; A space charge field calculation module, the space charge field calculation module is used to calculate the space charge field at the current space step; and a simulation module, the simulation module is used to call the power update module, the speed update module, the density update module and the space charge field calculation module to calculate the electron beam cavity by cavity from the starting position of the interaction zone of the klystron to the end position of the interaction zone, thereby completing a simulation of the beam-wave interaction process.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 7 are implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 7 are implemented.

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