Dislocation identification system based on gallium oxide wafer and identification method thereof

Abstract

The invention discloses a dislocation recognition system and method based on a gallium oxide wafer, and relates to the technical field of image processing, and the method comprises the steps: controlling an electron microscope to carry out the image collection of the gallium oxide wafer based on an analysis management terminal, and obtaining a to-be-recognized gallium oxide wafer image; and analyzing and processing the to-be-identified gallium oxide wafer image to obtain dislocation related data of the gallium oxide wafer. The method comprises the following steps: firstly, analyzing the spectrum characteristics of an image of a gallium oxide wafer to be identified to determine whether the gallium oxide wafer contains dislocation, then, calculating the dislocation density of the gallium oxide wafer containing dislocation information to determine the dislocation density of the gallium oxide wafer, and finally, evaluating the dislocation density of the gallium oxide wafer to determine the dislocation density of the gallium oxide wafer. According to the method, the quality of the gallium oxide wafer is determined, and whether the production process of the gallium oxide wafer needs to be optimized or not is selected, so that the quality of the gallium oxide wafer can be accurately determined, whether the gallium oxide wafer can be put into use or not can be determined, and the production cost is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of image processing, and in particular to a dislocation recognition system and a recognition method thereof based on a gallium oxide wafer. Background Art

[0002] Gallium oxide, as a material with wide bandgap and excellent thermal stability, has attracted extensive attention in the fields of power electronics and high-frequency communications in recent years. In the research of gallium oxide-based materials, dislocation is a key factor affecting its crystal quality and device performance. The presence of dislocation may lead to crystal growth defects, unstable device electrical performance, and even affect the reliability of the material.

[0003] The dislocation density of gallium oxide wafers affects the quality of gallium oxide wafers. The existing dislocation identification method of gallium oxide wafers only identifies the dislocation information of gallium oxide wafers, but does not analyze the dislocation density of gallium oxide wafers, and thus cannot accurately evaluate the quality of gallium oxide wafers. Summary of the invention

[0004] In order to solve the above technical problems, a dislocation identification system and identification method based on gallium oxide wafers are provided. The technical solution solves the problem that the dislocation density of the gallium oxide wafer mentioned in the above background technology affects the quality of the gallium oxide wafer. The existing dislocation identification method of gallium oxide wafers only identifies the dislocation information of the gallium oxide wafer, but does not analyze the dislocation density of the gallium oxide wafer, and thus cannot accurately evaluate the quality of the gallium oxide wafer.

[0005] In order to achieve the above purpose, the technical solution adopted by the present invention is:

[0006] A dislocation identification method based on a gallium oxide wafer, comprising:

[0007] Based on the analysis management terminal, the electron microscope is controlled to collect images of the gallium oxide wafer to obtain the image of the gallium oxide wafer to be identified;

[0008] Based on the analysis management terminal, the gallium oxide wafer image to be identified is analyzed and processed to obtain dislocation-related data of the gallium oxide wafer, wherein the dislocation-related data of the gallium oxide wafer includes the dislocation shape of the gallium oxide wafer and the number of dislocations of the gallium oxide wafer;

[0009] Based on the analysis and management terminal, the dislocation-related data of the gallium oxide wafer is analyzed and processed to obtain the dislocation density of the gallium oxide wafer;

[0010] Based on the analysis and management terminal, the dislocation density of the gallium oxide wafer is compared and judged to determine the quality of the gallium oxide wafer;

[0011] Based on the analysis management terminal, the quality of the gallium oxide wafer is analyzed and processed to determine whether the production process of the gallium oxide wafer is optimized.

[0012] Preferably, the method of controlling the electron microscope to collect images of the gallium oxide wafer based on the analysis management terminal to obtain the gallium oxide wafer to be identified specifically comprises the following steps:

[0013] Based on the analysis and management terminal, data is retrieved from the database system to obtain the dislocation image of the gallium oxide wafer;

[0014] Based on the analysis and management terminal, the dislocation image of the gallium oxide wafer is analyzed and processed to obtain the image shooting background and image shooting parameters;

[0015] The analysis management terminal calibrates the parameters of the electron microscope according to the image shooting parameters;

[0016] The analysis management terminal takes an image of the gallium oxide wafer according to the image shooting background and the electron microscope to obtain the gallium oxide wafer to be identified.

[0017] Preferably, the step of analyzing and processing the gallium oxide wafer image to be identified based on the analysis management terminal to obtain dislocation-related data of the gallium oxide wafer specifically comprises the following steps:

[0018] Based on the fast Fourier transform algorithm, the gallium oxide wafer image to be identified and the gallium oxide wafer dislocation image are respectively transformed in the frequency domain to obtain the frequency spectrum characteristics of the gallium oxide wafer image to be identified and the frequency spectrum characteristics of the gallium oxide wafer dislocation image;

[0019] The analysis management terminal screens and processes the frequency spectrum characteristics of the gallium oxide wafer image to be identified according to the frequency spectrum characteristics of the gallium oxide wafer dislocation image, and determines the dislocation information of the gallium oxide wafer;

[0020] Based on the analysis and management terminal, the dislocation information of the gallium oxide wafer is analyzed and processed to obtain the dislocation related data of the gallium oxide wafer.

[0021] Preferably, the analyzing and processing of the dislocation information of the gallium oxide wafer based on the analysis management terminal to obtain the dislocation related data of the gallium oxide wafer specifically comprises the following steps:

[0022] The analysis management terminal screens and processes the gallium oxide wafer image to be identified according to the dislocation information of the gallium oxide wafer, and determines the gallium oxide wafer image containing the dislocation information;

[0023] Based on the analysis and management terminal, feature extraction is performed on gallium oxide wafer images containing dislocation information to obtain dislocation shapes of several groups of gallium oxide wafers;

[0024] Based on the analysis management terminal, the dislocation shapes of several groups of gallium oxide wafers are counted to determine the number of dislocations in the gallium oxide wafers.

[0025] Preferably, the analyzing and processing of the dislocation-related data of the gallium oxide wafer based on the analysis management terminal to obtain the dislocation density of the gallium oxide wafer specifically comprises the following steps:

[0026] Based on the analysis management terminal, function matching is performed on the dislocation shapes of several groups of gallium oxide wafers to determine the dislocation similarity function;

[0027] Based on the analysis management terminal, the dislocation similarity function and the number of dislocations of the gallium oxide wafer are calculated and processed to obtain the total dislocation area of ​​the gallium oxide wafer;

[0028] Based on the analysis management terminal, the total dislocation area of ​​the gallium oxide wafer is analyzed and processed to obtain the dislocation density of the gallium oxide wafer.

[0029] Preferably, the specific calculation formula for obtaining the total dislocation area of ​​the gallium oxide wafer is:

[0030]

[0031] In the formula, S a is the total dislocation area of ​​the gallium oxide wafer; f i (x, y) is the dislocation similarity function; n is the number of dislocations in the gallium oxide wafer; Ω is the area enclosed by the dislocation shape of the gallium oxide wafer.

[0032] Preferably, the analyzing and processing of the total dislocation area of ​​the gallium oxide wafer based on the analysis management terminal to obtain the dislocation density of the gallium oxide wafer specifically comprises the following steps:

[0033] Based on the analysis management terminal, the database system is searched for information to obtain the manufacturing parameters of the gallium oxide wafer;

[0034] Based on the analysis and management terminal, data extraction and processing are performed on the manufacturing parameters of the gallium oxide wafer to obtain the size information of the gallium oxide wafer;

[0035] Based on the analysis and management terminal, the size information of the gallium oxide wafer is calculated and processed to obtain the area data of the gallium oxide wafer;

[0036] Based on the analysis and management terminal, the total dislocation area of ​​the gallium oxide wafer and the area data of the gallium oxide wafer are calculated and processed to obtain the dislocation density of the gallium oxide wafer;

[0037] The specific calculation formula for obtaining the dislocation density of the gallium oxide wafer is:

[0038]

[0039] In the formula, ρ a is the dislocation density of the gallium oxide wafer; S a is the total dislocation area of ​​the gallium oxide wafer; S b This is the area data of the gallium oxide wafer.

[0040] Preferably, the comparison and judgment processing of the dislocation density of the gallium oxide wafer based on the analysis management terminal to determine the quality of the gallium oxide wafer specifically includes the following steps:

[0041] Based on the analysis management terminal, the dislocation density of the gallium oxide wafer and the set density threshold are judged and processed;

[0042] If the dislocation density of the gallium oxide wafer is less than the set first density threshold, the dislocation density of the gallium oxide wafer is low, and the quality of the gallium oxide wafer is excellent;

[0043] If the dislocation density of the gallium oxide wafer is greater than or equal to the set first density threshold, and the dislocation density of the gallium oxide wafer is less than the set second density threshold, the dislocation density of the gallium oxide wafer is moderate, and the quality of the gallium oxide wafer is good;

[0044] If the dislocation density of the gallium oxide wafer is greater than or equal to the set second density threshold, the dislocation density of the gallium oxide wafer is high, and the quality of the gallium oxide wafer is poor.

[0045] Preferably, the method of analyzing and processing the quality of the gallium oxide wafer based on the analysis management terminal to determine whether to optimize the production process of the gallium oxide wafer specifically includes the following steps:

[0046] Based on the analysis management terminal, the gallium oxide wafers with poor quality and good quality are counted to obtain the number of good and defective gallium oxide wafers;

[0047] Obtaining the total number of gallium oxide wafers to be identified;

[0048] Based on the analysis management terminal, the number of good and defective gallium oxide wafers and the total number of gallium oxide wafers to be identified are calculated and processed to obtain the qualified rate of gallium oxide wafers;

[0049] Based on the analysis and management terminal, the qualified rate of gallium oxide wafers and the set qualified threshold are judged and processed;

[0050] If the qualified rate of the gallium oxide wafer is greater than or equal to the set qualified threshold, there is no need to optimize the production process of the gallium oxide wafer;

[0051] If the qualified rate of the gallium oxide wafers is lower than the set qualified threshold, the production process of the gallium oxide wafers needs to be optimized.

[0052] Furthermore, a dislocation identification system based on a gallium oxide wafer is proposed, which is used to implement the dislocation identification method based on a gallium oxide wafer as described above, comprising:

[0053] An analysis and management terminal, which performs image acquisition, image analysis, dislocation density calculation, dislocation density comparison and judgment, and quality analysis of the gallium oxide wafer to be identified; the analysis and management terminal is used to control data transmission and information interaction between various modules;

[0054] A database system, the database system being used to store the dislocation image of the gallium oxide wafer and the manufacturing parameters of the gallium oxide wafer;

[0055] An electron microscope, wherein the electron microscope is used to collect images of the gallium oxide wafer to obtain an image of the gallium oxide wafer to be identified;

[0056] A parameter analysis module, which is used to analyze and process the dislocation image of the gallium oxide wafer to determine the image shooting background and image shooting parameters;

[0057] An image processing module, wherein the image processing module performs frequency domain transformation on the gallium oxide wafer image to be identified and the gallium oxide wafer dislocation image according to a fast Fourier transform algorithm to determine the frequency spectrum characteristics of the gallium oxide wafer image to be identified and the frequency spectrum characteristics of the gallium oxide wafer dislocation image;

[0058] a dislocation determination module, which determines the dislocation information of the gallium oxide wafer by comparing the frequency spectrum characteristics of the gallium oxide wafer image to be identified with the frequency spectrum characteristics of the gallium oxide wafer dislocation image;

[0059] A feature extraction module, wherein the feature extraction module extracts features from gallium oxide wafer images containing dislocation information to obtain dislocation shapes of several groups of gallium oxide wafers;

[0060] A data processing module, wherein the data processing module counts the dislocation shapes of the plurality of groups of gallium oxide wafers to determine the number of dislocations in the gallium oxide wafers;

[0061] A function construction module, wherein the function construction module performs function matching according to the dislocation shapes of a plurality of groups of gallium oxide wafers to determine a dislocation similarity function;

[0062] A data calculation module, wherein the data calculation module performs calculation processing based on the dislocation similarity function, the number of dislocations of the gallium oxide wafer and the area data of the gallium oxide wafer to determine the dislocation density of the gallium oxide wafer;

[0063] A comparison and judgment module is used to analyze and judge the dislocation density of the gallium oxide wafer, determine the quality of the gallium oxide wafer, and select whether to optimize the production process of the gallium oxide wafer.

[0064] Compared with the prior art, the present invention provides a dislocation identification system and identification method based on gallium oxide wafer, which has the following beneficial effects:

[0065] The present invention first analyzes the frequency spectrum characteristics of the gallium oxide wafer image to be identified to determine whether the gallium oxide wafer contains dislocations, then calculates the dislocation density of the gallium oxide wafer containing dislocation information to determine the dislocation density of the gallium oxide wafer, and finally evaluates the dislocation density of the gallium oxide wafer to determine the quality of the gallium oxide wafer and selects whether the production process of the gallium oxide wafer needs to be optimized. Therefore, the above method can accurately determine the quality of the gallium oxide wafer and determine whether the gallium oxide wafer can be put into use, thereby reducing the production cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] Figure 1 This is a flow chart of steps S100-S500 in a dislocation identification method based on a gallium oxide wafer proposed by the present invention;

[0067] Figure 2 This is a flow chart of steps S101-S104 in a dislocation identification method based on a gallium oxide wafer proposed by the present invention;

[0068] Figure 3 This is a flow chart of steps S201-S203 in a dislocation identification method based on a gallium oxide wafer proposed by the present invention;

[0069] Figure 4 This is a flow chart of steps S2031-S2033 in a dislocation identification method based on a gallium oxide wafer proposed by the present invention;

[0070] Figure 5 This is a flow chart of steps S301-S303 in a dislocation identification method based on a gallium oxide wafer proposed by the present invention;

[0071] Figure 6 This is a flow chart of steps S3031-S3034 in a dislocation identification method based on a gallium oxide wafer proposed by the present invention;

[0072] Figure 7 This is a flow chart of steps S401-S404 in a dislocation identification method based on a gallium oxide wafer proposed by the present invention;

[0073] Figure 8 This is a flow chart of steps S501-S506 in a dislocation identification method based on a gallium oxide wafer proposed by the present invention;

[0074] Fig. 9This is a structural block diagram of a dislocation identification system based on gallium oxide wafer proposed by the present invention. DETAILED DESCRIPTION

[0075] The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are only examples, and those skilled in the art may think of other obvious variations.

[0076] Reference Figure 1 As shown, a dislocation identification method based on a gallium oxide wafer comprises:

[0077] S100, based on the analysis management terminal, controlling the electron microscope to collect images of the gallium oxide wafer to obtain an image of the gallium oxide wafer to be identified;

[0078] S200, based on the analysis management terminal, analyzing and processing the gallium oxide wafer image to be identified, and obtaining dislocation-related data of the gallium oxide wafer, wherein the dislocation-related data of the gallium oxide wafer includes the dislocation shape of the gallium oxide wafer and the number of dislocations of the gallium oxide wafer;

[0079] S300, analyzing and processing dislocation-related data of the gallium oxide wafer based on the analysis management terminal to obtain the dislocation density of the gallium oxide wafer;

[0080] S400, based on the analysis management terminal, comparing and judging the dislocation density of the gallium oxide wafer to determine the quality of the gallium oxide wafer;

[0081] S500, analyzing and processing the quality of the gallium oxide wafer based on the analysis management terminal to determine whether to optimize the production process of the gallium oxide wafer;

[0082] It can be understood by those skilled in the art that the dislocation density on the gallium oxide wafer determines whether the gallium oxide wafer can be put into use, and it is not possible to classify the gallium oxide wafer as waste simply by judging that there are dislocations on the gallium oxide wafer, as this will increase the production cost of the gallium oxide wafer. Therefore, by analyzing the dislocation density of the gallium oxide wafer, it is determined whether the gallium oxide wafer can be put into use. In addition, it is also possible to judge whether there is an abnormality in the production process of the gallium oxide wafer through the quality of the gallium oxide wafer. Therefore, the above method realizes the evaluation of the gallium oxide quality and reduces the production cost of the gallium oxide wafer.

[0083] Reference Figure 2 As shown, based on the analysis management terminal, controlling the electron microscope to collect images of the gallium oxide wafer, and obtaining the gallium oxide wafer to be identified specifically includes the following steps:

[0084] S101, based on the analysis management terminal, performing data retrieval on the database system to obtain a dislocation image of the gallium oxide wafer;

[0085] S102, analyzing and processing the dislocation image of the gallium oxide wafer based on the analysis management terminal to obtain the image shooting background and image shooting parameters;

[0086] S103, the analysis management terminal calibrates the parameters of the electron microscope according to the image shooting parameters;

[0087] S104, the analysis management terminal takes an image of the gallium oxide wafer according to the image shooting background and the electron microscope to obtain the gallium oxide wafer to be identified;

[0088] In this embodiment, in order to improve the recognition accuracy, the image of the gallium oxide wafer to be identified is captured under the same parameters as the dislocation image of the gallium oxide wafer, so that the gallium oxide wafer to be identified and the image of the gallium oxide wafer with dislocation information have the same equipment parameters and shooting positions, making the subsequent analysis process more convenient and faster, without the need to adjust the two images, and shortening the recognition time of the gallium oxide wafer dislocation. It is worth noting that when the two images have different parameters, comparative analysis thereof will produce a large error.

[0089] Reference Figure 3 As shown, based on the analysis management terminal, analyzing and processing the gallium oxide wafer image to be identified, and obtaining dislocation-related data of the gallium oxide wafer specifically includes the following steps:

[0090] S201, based on the fast Fourier transform algorithm, respectively perform frequency domain transformation on the gallium oxide wafer image to be identified and the gallium oxide wafer dislocation image to obtain the frequency spectrum characteristics of the gallium oxide wafer image to be identified and the frequency spectrum characteristics of the gallium oxide wafer dislocation image;

[0091] S202, the analysis management terminal screens and processes the frequency spectrum characteristics of the gallium oxide wafer image to be identified according to the frequency spectrum characteristics of the gallium oxide wafer dislocation image, and determines the dislocation information of the gallium oxide wafer;

[0092] S203, analyzing and processing the dislocation information of the gallium oxide wafer based on the analysis management terminal to obtain dislocation related data of the gallium oxide wafer;

[0093] In this embodiment, the spectral features of the gallium oxide wafer dislocation images are compared with the spectral features of the gallium oxide wafer images to be identified, so as to determine which gallium oxide wafer images to be identified have dislocation information, and then extract the gallium oxide wafers with dislocation information, thereby realizing the dislocation identification of the gallium oxide wafers.

[0094] Reference Figure 4 As shown, based on the analysis and management terminal, analyzing and processing the dislocation information of the gallium oxide wafer, and obtaining the dislocation-related data of the gallium oxide wafer specifically includes the following steps:

[0095] S2031, the analysis management terminal screens and processes the gallium oxide wafer image to be identified according to the dislocation information of the gallium oxide wafer, and determines the gallium oxide wafer image containing the dislocation information;

[0096] S2032, based on the analysis management terminal, extracting features of gallium oxide wafer images containing dislocation information to obtain dislocation shapes of several groups of gallium oxide wafers;

[0097] S2033, based on the analysis management terminal, counting the dislocation shapes of the plurality of groups of gallium oxide wafers to determine the number of dislocations of the gallium oxide wafers;

[0098] In this embodiment, the dislocation density of the gallium oxide wafer is related to the area formed by the dislocation shape of the gallium oxide wafer, the number of dislocations in the gallium oxide wafer, and the area of ​​the gallium oxide wafer. Therefore, the dislocation shape and the number of dislocations in the gallium oxide wafer are determined by extracting features from the gallium oxide wafer image containing dislocation information through an edge detection algorithm or a convolutional neural network algorithm.

[0099] Reference Figure 5 As shown, based on the analysis management terminal, analyzing and processing the dislocation related data of the gallium oxide wafer to obtain the dislocation density of the gallium oxide wafer specifically includes the following steps:

[0100] S301, based on the analysis management terminal, performing function matching on the dislocation shapes of a plurality of groups of gallium oxide wafers to determine a dislocation similarity function;

[0101] S302, based on the analysis management terminal, calculating and processing the dislocation similarity function and the number of dislocations of the gallium oxide wafer to obtain the total dislocation area of ​​the gallium oxide wafer;

[0102] S303, analyzing and processing the total dislocation area of ​​the gallium oxide wafer based on the analysis management terminal to obtain the dislocation density of the gallium oxide wafer;

[0103] The specific calculation formula for obtaining the total dislocation area of ​​the gallium oxide wafer is:

[0104]

[0105] In the formula, S a is the total dislocation area of ​​the gallium oxide wafer; f i (x, y) is the dislocation similarity function; n is the number of dislocations in the gallium oxide wafer; Ω is the area enclosed by the dislocation shape of the gallium oxide wafer.

[0106] Reference Figure 6 As shown, based on the analysis management terminal, the total dislocation area of ​​the gallium oxide wafer is analyzed and processed to obtain the dislocation density of the gallium oxide wafer, which specifically includes the following steps:

[0107] S3031. Based on the analysis management terminal, perform information retrieval processing on the database system to obtain manufacturing parameters of the gallium oxide wafer;

[0108] S3032, based on the analysis management terminal, performing data extraction and processing on the manufacturing parameters of the gallium oxide wafer to obtain size information of the gallium oxide wafer;

[0109] S3033, based on the analysis management terminal, calculating and processing the size information of the gallium oxide wafer to obtain the area data of the gallium oxide wafer;

[0110] S3034, based on the analysis management terminal, calculating and processing the total dislocation area of ​​the gallium oxide wafer and the area data of the gallium oxide wafer to obtain the dislocation density of the gallium oxide wafer;

[0111] The specific calculation formula for obtaining the dislocation density of the gallium oxide wafer is:

[0112]

[0113] In the formula, ρ a is the dislocation density of the gallium oxide wafer; S a is the total dislocation area of ​​the gallium oxide wafer; S b is the area data of gallium oxide wafer;

[0114] In this embodiment, the dislocation density of the gallium oxide wafer is related to the number of dislocations in the gallium oxide wafer, the area of ​​the region enclosed by the dislocation shape of the gallium oxide wafer, and the area of ​​the gallium oxide wafer. Therefore, the dislocation density of the gallium oxide wafer is obtained by calculating the size information of the gallium oxide wafer, the number of dislocations in the gallium oxide wafer, and the dislocation area of ​​the gallium oxide wafer.

[0115] Reference Figure 7 As shown, based on the analysis and management terminal, the dislocation density of the gallium oxide wafer is compared and judged, and the quality of the gallium oxide wafer is determined, which specifically includes the following steps:

[0116] S401, based on the analysis management terminal, judging and processing the dislocation density of the gallium oxide wafer and the set density threshold;

[0117] S402, if the dislocation density of the gallium oxide wafer is less than the set first density threshold, the dislocation density of the gallium oxide wafer is low, and the quality of the gallium oxide wafer is excellent;

[0118] S403, if the dislocation density of the gallium oxide wafer is greater than or equal to the set first density threshold, and the dislocation density of the gallium oxide wafer is less than the set second density threshold, the dislocation density of the gallium oxide wafer is moderate, and the quality of the gallium oxide wafer is good;

[0119] S404, if the dislocation density of the gallium oxide wafer is greater than or equal to the set second density threshold, the dislocation density of the gallium oxide wafer is high, and the quality of the gallium oxide wafer is poor;

[0120] In this embodiment, whether the gallium oxide wafer can be put into use is closely related to the dislocation density of the gallium oxide wafer. Therefore, the quality of the gallium oxide wafer is determined by comparing the dislocation density of the gallium oxide wafer with the set threshold, and then it is determined whether the gallium oxide wafer can be used normally. The above method can not only reduce the production cost of the gallium oxide wafer, but also accurately determine the quality of the gallium oxide wafer.

[0121] Reference Figure 8 As shown, based on the analysis management terminal, analyzing and processing the quality of the gallium oxide wafer to determine whether to optimize the production process of the gallium oxide wafer specifically includes the following steps:

[0122] S501, based on the analysis management terminal, counting the gallium oxide wafers with poor quality and good quality to obtain the number of good and defective gallium oxide wafers;

[0123] S502, obtaining the total number of gallium oxide wafers to be identified;

[0124] S503, based on the analysis management terminal, calculating and processing the number of good and defective gallium oxide wafers and the total number of gallium oxide wafers to be identified, and obtaining the qualified rate of the gallium oxide wafers;

[0125] S504, based on the analysis management terminal, judging and processing the qualified rate of the gallium oxide wafer and setting the qualified threshold;

[0126] S505: If the qualified rate of the gallium oxide wafer is greater than or equal to the set qualified threshold, there is no need to optimize the production process of the gallium oxide wafer;

[0127] S506: If the qualified rate of the gallium oxide wafer is less than the set qualified threshold, the production process of the gallium oxide wafer needs to be optimized;

[0128] In this embodiment, when there are a large number of good and defective gallium oxide wafers in the same batch, it means that there is an abnormality in the production process of the gallium oxide wafers. It may be that some equipment has an abnormality, resulting in a lower pass rate of the gallium oxide wafers, or there may be an abnormality in the raw materials of the gallium oxide wafers. Therefore, the production process and raw materials of the gallium oxide wafers are checked through the pass rate of the gallium oxide wafers, thereby reducing the production cost of the gallium oxide wafers.

[0129] Reference Fig. 9 As shown, a dislocation identification system based on a gallium oxide wafer is used to implement a dislocation identification method based on a gallium oxide wafer as described above, comprising:

[0130] An analysis and management terminal, which performs image acquisition, image analysis, dislocation density calculation, dislocation density comparison and judgment, and quality analysis of the gallium oxide wafer to be identified; the analysis and management terminal is used to control data transmission and information interaction between various modules;

[0131] A database system, the database system being used to store the dislocation image of the gallium oxide wafer and the manufacturing parameters of the gallium oxide wafer;

[0132] An electron microscope, wherein the electron microscope is used to collect images of the gallium oxide wafer to obtain an image of the gallium oxide wafer to be identified;

[0133] A parameter analysis module, which is used to analyze and process the dislocation image of the gallium oxide wafer to determine the image shooting background and image shooting parameters;

[0134] An image processing module, wherein the image processing module performs frequency domain transformation on the gallium oxide wafer image to be identified and the gallium oxide wafer dislocation image according to a fast Fourier transform algorithm to determine the frequency spectrum characteristics of the gallium oxide wafer image to be identified and the frequency spectrum characteristics of the gallium oxide wafer dislocation image;

[0135] a dislocation determination module, which determines the dislocation information of the gallium oxide wafer by comparing the frequency spectrum characteristics of the gallium oxide wafer image to be identified with the frequency spectrum characteristics of the gallium oxide wafer dislocation image;

[0136] A feature extraction module, wherein the feature extraction module extracts features from gallium oxide wafer images containing dislocation information to obtain dislocation shapes of several groups of gallium oxide wafers;

[0137] A data processing module, wherein the data processing module counts the dislocation shapes of the plurality of groups of gallium oxide wafers to determine the number of dislocations in the gallium oxide wafers;

[0138] A function construction module, wherein the function construction module performs function matching according to the dislocation shapes of a plurality of groups of gallium oxide wafers to determine a dislocation similarity function;

[0139] A data calculation module, wherein the data calculation module performs calculation processing based on the dislocation similarity function, the number of dislocations of the gallium oxide wafer and the area data of the gallium oxide wafer to determine the dislocation density of the gallium oxide wafer;

[0140] A comparison and judgment module is used to analyze and judge the dislocation density of the gallium oxide wafer, determine the quality of the gallium oxide wafer, and select whether to optimize the production process of the gallium oxide wafer.

[0141] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions only describe the principles of the present invention. The present invention may be subject to various changes and improvements without departing from the spirit and scope of the present invention. These changes and improvements fall within the scope of the present invention. The scope of protection claimed by the present invention is defined by the attached claims and their equivalents.

Claims

1. A dislocation identification method based on gallium oxide wafer, characterized in that: include: Based on the analysis management terminal, the electron microscope is controlled to collect images of the gallium oxide wafer to obtain the image of the gallium oxide wafer to be identified; Based on the analysis management terminal, the gallium oxide wafer image to be identified is analyzed and processed to obtain dislocation-related data of the gallium oxide wafer, wherein the dislocation-related data of the gallium oxide wafer includes the dislocation shape of the gallium oxide wafer and the number of dislocations of the gallium oxide wafer; Based on the analysis and management terminal, the dislocation-related data of the gallium oxide wafer is analyzed and processed to obtain the dislocation density of the gallium oxide wafer; Based on the analysis and management terminal, the dislocation density of the gallium oxide wafer is compared and judged to determine the quality of the gallium oxide wafer; Based on the analysis management terminal, the quality of the gallium oxide wafer is analyzed and processed to determine whether the production process of the gallium oxide wafer is optimized.

2. A dislocation identification method based on gallium oxide wafer according to claim 1, characterized in that: The method of controlling the electron microscope to collect images of the gallium oxide wafer based on the analysis management terminal to obtain the gallium oxide wafer to be identified specifically includes the following steps: Based on the analysis and management terminal, data is retrieved from the database system to obtain the dislocation image of the gallium oxide wafer; Based on the analysis and management terminal, the dislocation image of the gallium oxide wafer is analyzed and processed to obtain the image shooting background and image shooting parameters; The analysis management terminal calibrates the parameters of the electron microscope according to the image shooting parameters; The analysis management terminal takes an image of the gallium oxide wafer according to the image shooting background and the electron microscope to obtain the gallium oxide wafer to be identified.

3. The method for dislocation identification based on gallium oxide wafer according to claim 1, characterized in that: The method of analyzing and processing the gallium oxide wafer image to be identified based on the analysis management terminal to obtain dislocation-related data of the gallium oxide wafer specifically includes the following steps: Based on the fast Fourier transform algorithm, the gallium oxide wafer image to be identified and the gallium oxide wafer dislocation image are respectively transformed in the frequency domain to obtain the frequency spectrum characteristics of the gallium oxide wafer image to be identified and the frequency spectrum characteristics of the gallium oxide wafer dislocation image; The analysis management terminal screens and processes the frequency spectrum characteristics of the gallium oxide wafer image to be identified according to the frequency spectrum characteristics of the gallium oxide wafer dislocation image, and determines the dislocation information of the gallium oxide wafer; Based on the analysis and management terminal, the dislocation information of the gallium oxide wafer is analyzed and processed to obtain the dislocation related data of the gallium oxide wafer.

4. The method for dislocation identification based on gallium oxide wafer according to claim 3, characterized in that: The method of analyzing and processing the dislocation information of the gallium oxide wafer based on the analysis management terminal to obtain the dislocation related data of the gallium oxide wafer specifically includes the following steps: The analysis management terminal screens and processes the gallium oxide wafer image to be identified according to the dislocation information of the gallium oxide wafer, and determines the gallium oxide wafer image containing the dislocation information; Based on the analysis and management terminal, feature extraction is performed on gallium oxide wafer images containing dislocation information to obtain dislocation shapes of several groups of gallium oxide wafers; Based on the analysis management terminal, the dislocation shapes of several groups of gallium oxide wafers are counted to determine the number of dislocations in the gallium oxide wafers.

5. The method for dislocation identification based on gallium oxide wafer according to claim 1, characterized in that: The method of analyzing and processing the dislocation-related data of the gallium oxide wafer based on the analysis management terminal to obtain the dislocation density of the gallium oxide wafer specifically includes the following steps: Based on the analysis management terminal, function matching is performed on the dislocation shapes of several groups of gallium oxide wafers to determine the dislocation similarity function; Based on the analysis management terminal, the dislocation similarity function and the number of dislocations of the gallium oxide wafer are calculated and processed to obtain the total dislocation area of ​​the gallium oxide wafer; Based on the analysis management terminal, the total dislocation area of ​​the gallium oxide wafer is analyzed and processed to obtain the dislocation density of the gallium oxide wafer.

6. A dislocation identification method based on gallium oxide wafer according to claim 5, characterized in that: The specific calculation formula for obtaining the total dislocation area of ​​the gallium oxide wafer is: In the formula, S a is the total dislocation area of ​​the gallium oxide wafer; f i (x, y) is the dislocation similarity function; n is the number of dislocations in the gallium oxide wafer; Ω is the area enclosed by the dislocation shape of the gallium oxide wafer.

7. The method for dislocation identification based on gallium oxide wafer according to claim 1, characterized in that: The method of analyzing and processing the total dislocation area of ​​the gallium oxide wafer based on the analysis management terminal to obtain the dislocation density of the gallium oxide wafer specifically includes the following steps: Based on the analysis management terminal, the database system is searched for information to obtain the manufacturing parameters of the gallium oxide wafer; Based on the analysis and management terminal, data extraction and processing are performed on the manufacturing parameters of the gallium oxide wafer to obtain the size information of the gallium oxide wafer; Based on the analysis and management terminal, the size information of the gallium oxide wafer is calculated and processed to obtain the area data of the gallium oxide wafer; Based on the analysis and management terminal, the total dislocation area of ​​the gallium oxide wafer and the area data of the gallium oxide wafer are calculated and processed to obtain the dislocation density of the gallium oxide wafer; The specific calculation formula for obtaining the dislocation density of the gallium oxide wafer is: In the formula, ρ a is the dislocation density of the gallium oxide wafer; S a is the total dislocation area of ​​the gallium oxide wafer; S b This is the area data of the gallium oxide wafer.

8. The method for dislocation identification based on gallium oxide wafer according to claim 1, characterized in that: The method of comparing and judging the dislocation density of the gallium oxide wafer based on the analysis management terminal to determine the quality of the gallium oxide wafer specifically includes the following steps: Based on the analysis management terminal, the dislocation density of the gallium oxide wafer and the set density threshold are judged and processed; If the dislocation density of the gallium oxide wafer is less than the set first density threshold, the dislocation density of the gallium oxide wafer is low, and the quality of the gallium oxide wafer is excellent; If the dislocation density of the gallium oxide wafer is greater than or equal to the set first density threshold, and the dislocation density of the gallium oxide wafer is less than the set second density threshold, the dislocation density of the gallium oxide wafer is moderate, and the quality of the gallium oxide wafer is good; If the dislocation density of the gallium oxide wafer is greater than or equal to the set second density threshold, the dislocation density of the gallium oxide wafer is high, and the quality of the gallium oxide wafer is poor.

9. The method for dislocation identification based on gallium oxide wafer according to claim 1, characterized in that: The method of analyzing and processing the quality of the gallium oxide wafer based on the analysis management terminal to determine whether to optimize the production process of the gallium oxide wafer specifically includes the following steps: Based on the analysis management terminal, the gallium oxide wafers with poor quality and good quality are counted to obtain the number of good and defective gallium oxide wafers; Obtaining the total number of gallium oxide wafers to be identified; Based on the analysis management terminal, the number of good and defective gallium oxide wafers and the total number of gallium oxide wafers to be identified are calculated and processed to obtain the qualified rate of gallium oxide wafers; Based on the analysis and management terminal, the qualified rate of gallium oxide wafers and the set qualified threshold are judged and processed; If the qualified rate of the gallium oxide wafer is greater than or equal to the set qualified threshold, there is no need to optimize the production process of the gallium oxide wafer; If the qualified rate of the gallium oxide wafers is lower than the set qualified threshold, the production process of the gallium oxide wafers needs to be optimized.

10. A dislocation identification system based on a gallium oxide wafer, used to implement a dislocation identification method based on a gallium oxide wafer as claimed in any one of claims 1 to 9, characterized in that: include: An analysis and management terminal, which performs image acquisition, image analysis, dislocation density calculation, dislocation density comparison and judgment, and quality analysis of the gallium oxide wafer to be identified; the analysis and management terminal is used to control data transmission and information interaction between various modules; A database system, the database system being used to store the dislocation image of the gallium oxide wafer and the manufacturing parameters of the gallium oxide wafer; An electron microscope, wherein the electron microscope is used to collect images of the gallium oxide wafer to obtain an image of the gallium oxide wafer to be identified; A parameter analysis module, which is used to analyze and process the dislocation image of the gallium oxide wafer to determine the image shooting background and image shooting parameters; An image processing module, wherein the image processing module performs frequency domain transformation on the gallium oxide wafer image to be identified and the gallium oxide wafer dislocation image according to a fast Fourier transform algorithm to determine the frequency spectrum characteristics of the gallium oxide wafer image to be identified and the frequency spectrum characteristics of the gallium oxide wafer dislocation image; a dislocation determination module, which determines the dislocation information of the gallium oxide wafer by comparing the frequency spectrum characteristics of the gallium oxide wafer image to be identified with the frequency spectrum characteristics of the gallium oxide wafer dislocation image; A feature extraction module, wherein the feature extraction module extracts features from gallium oxide wafer images containing dislocation information to obtain dislocation shapes of several groups of gallium oxide wafers; A data processing module, wherein the data processing module counts the dislocation shapes of the plurality of groups of gallium oxide wafers to determine the number of dislocations in the gallium oxide wafers; A function construction module, wherein the function construction module performs function matching according to the dislocation shapes of a plurality of groups of gallium oxide wafers to determine a dislocation similarity function; A data calculation module, wherein the data calculation module performs calculation processing based on the dislocation similarity function, the number of dislocations of the gallium oxide wafer and the area data of the gallium oxide wafer to determine the dislocation density of the gallium oxide wafer; A comparison and judgment module is used to analyze and judge the dislocation density of the gallium oxide wafer, determine the quality of the gallium oxide wafer, and select whether to optimize the production process of the gallium oxide wafer.

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