A processing method of self-generating metal-graphene composite thermal interface material

Abstract

The application relates to the technical field of thermal interface materials, and discloses a processing method of a self-generated metal-graphene composite thermal interface material, which is applied to chip processing, wherein graphene and derivatives thereof, metal salt, ceramic high-thermal-conductivity particles and a reducing agent are added into water or an alcohol solvent, mixed liquid A is obtained through dispersion treatment, at least one of silicon grease or silicon resin is added, slurry B is obtained through dispersion treatment, the slurry B is coated on the heat dissipation surface of a chip to be processed and covers the heat dissipation fin, heating is triggered to trigger a reaction and the heating is kept until drying, the solvent volatilizes in the drying process, metal is generated between the heat dissipation surface and the heat dissipation fin, until the solvent is completely volatilized, and the heat dissipation fin is fixed on the heat dissipation surface of the chip. The metal salt is reduced into nano metal particles by the reducing agent, the nano metal particles are filled between the graphene grids, and a nano metal composite graphene thermal interface material is formed.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of thermal interface materials, and particularly relates to a processing method for self-generating metal-graphene composite thermal interface materials. BACKGROUND

[0002] With the development of electronic devices towards high performance and miniaturization, the power density of chips is increasing, and the heat generated is significantly improved. In order to ensure the stable operation of chips and electronic devices under high temperature conditions, heat dissipation technology has become a key link to improve the stability and prolong the service life of electronic devices. As an important part of heat dissipation technology, thermal interface material (TIM) is widely used to fill the gap between heat source and heat sink to improve the efficiency of heat transfer. However, the existing thermal conductive materials are difficult to meet the needs of high thermal conductivity, mechanical strength and fatigue resistance at the same time, and the development of new thermal interface materials is urgently needed.

[0003] At present, graphene is often used in electronic device heat dissipation materials due to its excellent thermal conductivity. Graphene film is one of the common thermal interface materials, which has excellent thermal conductivity and high thermal stability. However, graphene film has high cost, and defects such as points, lines and surfaces are easily generated in the preparation process, which leads to the decrease of mechanical strength and thermal conductivity in long-term use. In addition, the production process of graphene is relatively complex and has a certain impact on the environment. Therefore, there is a significant demand for green thermal interface materials with high thermal conductivity, mechanical strength and economy in the market.

[0004] The existing graphene-based heat dissipation materials have problems such as poor fatigue resistance, decreased thermal conductivity and high cost, which cannot meet the high-efficiency heat dissipation needs of modern electronic devices. SUMMARY

[0005] In view of the above defects, the purpose of the present application is to provide a processing method for self-generating metal-graphene composite thermal interface materials, which enhances the connection force between graphene oxides, so that the thermal interface materials have thermal conductivity, mechanical strength and economy, are convenient to produce and use, and are more environmentally friendly.

[0006] To achieve this purpose, the present application adopts the following technical solutions:

[0007] A processing method for self-generating metal-graphene composite thermal interface materials applied to chip processing, the processing method comprising the following steps:

[0008] S1. Graphene, metal salt and reducing agent are added to water or alcohol solvent to obtain mixed solution A after dispersion treatment;

[0009] S2. At least one of silicon grease or silicone is added to the mixed solution A, and dispersion treatment is performed to obtain slurry B;

[0010] S3. Apply slurry B to the heat dissipation surface of the chip to be processed, cover the heat dissipation sheet on the heat dissipation surface coated with slurry B, and form a liquid film between the heat dissipation surface and the heat dissipation sheet;

[0011] S4. Heat to trigger the reaction and keep until drying, during which the solvent in the liquid film volatilizes, slurry B is heated to start the reaction, the metal is generated between the heat dissipation surface and the heat dissipation sheet, the distance between the heat dissipation surface and the heat dissipation sheet gradually decreases, until the solvent is completely volatilized, and the heat dissipation sheet is fixed on the heat dissipation surface of the chip.

[0012] Preferably, the metal salt comprises at least one element of Cu, Ag, Ni, Ti, Au, Al, Sn, Fe, Co, and the metal salt is an organic metal salt or a hydroxide, chloride, sulfate, nitrate of the metal.

[0013] Preferably, the organic metal salt is at least one of acetic acid, acetic acid, formic acid or acetylacetone metal salt.

[0014] Preferably, the reducing agent is at least one of ascorbic acid, glucose or hydrazine hydrate.

[0015] Preferably, the heating temperature in step S4 is 20-300℃.

[0016] Preferably, the alcohol solvent is at least one of ethanol, ethylene glycol, diethylene glycol, diethylene glycol, dipropylene glycol, glycerol or terpineol;

[0017] The graphene oxide includes graphene oxide and its derivatives, and the mass fraction of the graphene oxide in the composite material is 0.02-10%;

[0018] The mass fraction of the silicone grease or the silicone resin in the composite material is 1-10%.

[0019] The dispersing agent is polyethylene glycol or polyvinyl alcohol, and the mass fraction of the dispersing agent in the composite material is 1-10%;

[0020] The flux contains rosin, and the mass fraction of the flux in the composite material is 1-10%.

[0021] Preferably, at least one of a thickening agent, a sintering aid, a film forming agent or a thixotropic agent is further added;

[0022] The thickening agent is polyethylene glycol or polyvinyl alcohol, the sintering aid is an alkaline earth metal oxide, the film forming agent is at least one of hydrogenated rosin, polymerized rosin or water white rosin, and the thixotropic agent is at least one of hydrogenated castor oil or polyamide.

[0023] Preferably, high thermal conductive particles are added, and the mass fraction of the metal salt and the high thermal conductive particles in the composite material is 50-97%.

[0024] Preferably, when a magnetic metal is used, a magnetic field is applied in the step S4, and the direction of the applied magnetic field is perpendicular to the heat dissipation surface.

[0025] Preferably, the dispersion treatment in the step S1 is mechanical stirring, ultrasonic dispersion or homogenization dispersion, and the dispersion treatment in the step S2 is ultrasonic dispersion or homogenization dispersion.

[0026] The technical solution provided by the present application can include the following beneficial effects:

[0027] The metal salt is reduced into nano metal particles by a reducing agent, so that the nano metal particles are filled between the graphene grids to form a nano metal composite graphene thermal interface material. The prepared thermal interface material has good thermal conductivity and mechanical strength, and is more economical, green and environmentally friendly. The production method of the thermal interface material prepared by the process is simple, easy to operate and high in production efficiency.

[0028] The thermal interface material prepared by the present application does not need to be post-treated, and the slurry is directly coated on the back of the chip for use, which is simple, efficient, green, economical and environmentally friendly, and no toxic and harmful substances are generated. The metal salt is reduced into nano metal particles by a reducing agent, so that the nano metal particles are filled between the graphene grids to form a nano metal composite graphene thermal interface material. The process does not need to add a catalyst or other materials, simplifies the steps and is convenient to use. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 The preparation line diagram of an embodiment of the present application.

[0030] Figure 2 The preparation line diagram of another embodiment of the present application.

[0031] Figure 3 The preparation line diagram of another embodiment of the present application. DETAILED DESCRIPTION

[0032] In order to facilitate the understanding of the present application, the present application will be described more fully below. The present application can be realized in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0033] Unless specific techniques or conditions are specified in the embodiments, the techniques or conditions described in the literature in the art or according to the product instructions are used. Unless the manufacturer of the reagent or instrument is specified, it is a conventional product that can be obtained by purchase on the market.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0035] A processing method for self-generating metal-graphene composite thermal interface material is applied to chip processing, and the processing method comprises the following steps:

[0036] S1. graphene, metal salt and reducing agent are added into water or alcohol solvent to obtain a mixed solution A through dispersion treatment;

[0037] S2. at least one of silicone grease or silicone resin is added into the mixed solution A to obtain a slurry B through dispersion treatment;

[0038] S3. the slurry B is coated on the heat dissipation surface of a chip to be processed, and a heat dissipation fin is covered on the heat dissipation surface coated with the slurry B, and a liquid film is formed between the slurry B and the heat dissipation fin;

[0039] S4. heating triggers the reaction and keeps until drying, in the drying process, the solvent in the liquid film volatilizes, the slurry B is heated to start the reaction, the metal is generated between the heat dissipation surface and the heat dissipation fin, the distance between the heat dissipation surface and the heat dissipation fin gradually decreases, until the solvent is completely volatilized, and the heat dissipation fin is fixed on the heat dissipation surface of the chip.

[0040] Most of the existing chip heat dissipation materials are graphene films, which are expensive and pollute the environment. Graphene is prone to point, line and surface defects, which leads to the decrease of the mechanical strength and thermal conductivity of the material. The self-generated metal-graphene composite thermal interface material prepared by the scheme is reduced by the reducing agent to form nano metal particles, which are filled in the graphene oxide grid to form a nano metal composite graphene thermal interface material. The prepared thermal interface material has good thermal conductivity and mechanical strength, and is more economical and environmentally friendly. The production method for preparing the thermal interface material layer is simple, easy to operate and high in production efficiency. In the traditional method for preparing the graphene metal composite thermal interface material, the centrifugation operation in the post-processing will cause the graphene to be agglomerated and accelerate the agglomeration effect of the graphene. The thermal interface material prepared by the scheme does not need post-processing, and the slurry is directly coated on the back of the chip and dried by heating for use, which is simple, efficient, harmless and green. At the same time, the metal salt is reduced by the reducing agent to form metal particles on the graphene oxide, and the metal particles connect the graphene oxide to form a heat dissipation network. This process does not need to add catalyst or other materials, simplifies the steps and is convenient to use.

[0041] As Figure 1 In an embodiment, the graphene oxide is added into the alcohol solvent to obtain solution C, the metal salt is added into the alcohol solvent to obtain solution D, and the reducing agent is added into the alcohol solvent to obtain solution E. Solution C and solution D are mixed and ultrasonically stirred, and then solution E is added and ultrasonically stirred.

[0042] As Figure 2 In a specific embodiment, the slurry forms a liquid film between the heat dissipation surface and the heat dissipation fin, and is maintained at a thickness of 0.1-1 mm under the action of surface tension without flowing out. Then, the metal is allowed to be generated between the heat dissipation surface and the heat dissipation fin by heating. As the solvent in the slurry volatilizes, the distance between the heat dissipation surface and the heat dissipation fin gradually decreases, until the solvent is completely volatilized, the heat dissipation surface and the heat dissipation fin are pressed tightly, and the thermal interface material layer is formed.

[0043] Preferably, the metal salt comprises at least one element selected from Cu, Ag, Ni, Ti, Au, Al, Sn, Fe, and Co, and the metal salt is an organic metal salt or a hydroxide, chloride, sulfate, or nitrate of the metal.

[0044] The metal elements are selected to have excellent thermal conductivity after being reduced and combined with graphene. The organic metal salt or the hydroxide of the metal is used to avoid the use of inorganic metal salts which introduce impurities that are difficult to remove after the reaction, thereby solving the problem of performance degradation of the thermal interface material prepared from the metal paste. The use of the metal oxide is avoided to solve the problem of complex operation due to harsh reaction conditions for the reduction of the metal oxide.

[0045] Preferably, the mass fraction of the metal salt in the composite material is 10-60%.

[0046] Preferably, the organic metal salt is at least one of an acetate, acetic acid, formic acid, or acetylacetone metal salt.

[0047] The organic metal salt is selected to have a low decomposition and volatilization temperature of the product after being reduced, so that it is easily decomposed and removed during the heating and drying process, thereby solving the problem of long drying time or high drying temperature affecting the use of the metal paste during the preparation of the thermal interface material from the metal paste.

[0048] Preferably, the reducing agent is at least one of ascorbic acid, glucose, or hydrazine hydrate.

[0049] In a specific embodiment, the amount of the reducing agent can reduce all of the metal salt or the hydroxide of the metal to the elemental metal. The reducing agent is selected to be a green and environmentally friendly material that can be decomposed at 200-300°C and does not introduce other impurities during the production process.

[0050] Preferably, the heating temperature in step S4 is 20-300℃.

[0051] Too low reaction temperature will result in too slow reaction speed or even no reaction. Too high reaction temperature will result in accelerated reaction speed, which will easily cause the agglomeration of nano metal particles, and the metal elements will be easily oxidized to form oxides at high temperature. Meanwhile, the solvent will start to decompose above 300℃. Too short reaction time will result in insufficient reaction, and too long reaction time will result in too long contact time between nano metal particles and air, which will accelerate the oxidation of nano metal particles.

[0052] Preferably, the alcohol solvent is at least one of ethanol, ethylene glycol, diethylene glycol, dipropylene glycol, glycerol or terpineol.

[0053] The mass fraction of the graphene in the composite material is 0.02-10%.

[0054] The mass fraction of the silicone grease or the silicone resin in the composite material is 1-10%.

[0055] Preferably, the graphene and its derivatives are at least one of graphene oxide, oxygen plasma treated graphene, carbon nanotube and oxygen plasma treated carbon nanotube.

[0056] The graphene and its derivatives use these raw materials, and the graphene and carbon nanotube after treatment have oxygen-containing functional groups and improved bonding force with metals.

[0057] The graphene can be directly purchased, or the graphene or its derivatives are purchased and then subjected to oxygen plasma treatment to obtain graphene oxide, oxygen plasma treated graphene or oxygen plasma treated carbon nanotube.

[0058] In specific embodiments, non-toxic and harmless silicone grease or silicone resin materials are used to avoid the generation of harmful substances in the processing process.

[0059] Preferably, step 2 further comprises adding a dispersant and a flux.

[0060] The dispersant is polyethylene glycol or polyvinyl alcohol, and the mass fraction of the dispersant in the composite material is 1-10%.

[0061] The flux contains rosin, and the mass fraction of the flux in the composite material is 1-10%.

[0062] The function of the flux is to assist the heat conduction process during the heating and drying process, accelerate the heat conduction rate, and make the paste evenly heated.

[0063] Preferably, at least one of a thickening agent, a sintering aid, a film forming agent or a thixotropic agent is further added.

[0064] The thickening agent is polyethylene glycol or polyvinyl alcohol, the sintering aid is alkaline earth metal oxide, the film forming agent is at least one of hydrogenated rosin, polymerized rosin or water white rosin, and the thixotropic agent is at least one of hydrogenated castor oil or polyamide.

[0065] By using polyethylene glycol as the thickening agent, the viscosity of the paste can be increased, making it easier to fill gaps and maintain good contact when applying. Its rheological properties allow the paste to maintain a certain adhesion when heated, preventing the paste from flowing or shifting, ensuring close contact between the heat dissipation material and the heat dissipation device. By using magnesium oxide as a sintering aid, the sintering temperature of the material can be reduced, helping the thermal interface material to form a dense structure at a lower temperature, which is particularly important in the manufacture of temperature-sensitive electronic devices, helping to save energy and protect components from high temperature damage.

[0066] By using magnesium oxide as a sintering aid, magnesium oxide has a relatively high thermal conductivity, which can significantly improve the overall thermal conductivity of the paste, effectively filling the micro voids in the material, reducing thermal resistance and enhancing thermal conductivity efficiency, helping the device to dissipate heat faster during operation.

[0067] By using hydrogenated rosin as a film forming agent, a continuous and flexible film can be formed on the surface of the paste, which can effectively protect the filler components from delamination or falling off during use, while improving the uniformity of the paste on the interface, making heat conduction more uniform.

[0068] By using hydrogenated castor oil as a thixotropic agent, the thermal interface material paste becomes viscous and stable when at rest, but becomes easy to flow when subjected to shear force during extrusion or coating. Such thixotropic properties facilitate precise application of the paste and reduce the risk of material flowing or shifting between electronic device interfaces.

[0069] Preferably, high thermal conductivity particles are also added, and the mass fraction of the metal salt and the high thermal conductivity particles in the composite material is 50-97%.

[0070] The high thermal conductivity particles include at least one of polycrystalline diamond ceramic, silicon carbide ceramic, silicon nitride ceramic and beryllium oxide ceramic.

[0071] In a specific embodiment, the high thermal conductivity particles are ceramic particles, and ceramic particles are also added in step S1.

[0072] The metal salt, metal oxide, reduced metal or ceramic particles used have magnetic properties.

[0073] Preferably, when a magnetic metal is used, a magnetic field is applied in step S4, and the direction of the applied magnetic field is perpendicular to the heat dissipation surface.

[0074] As Figure 3 When using magnetic metals such as nickel, iron, cobalt, etc., the magnetic field applied in step S4 is used to magnetize the metal after it is generated to form a chain-like arrangement, thereby increasing the heat dissipation performance of the thermal interface material.

[0075] Preferably, the thickness of the liquid film in step S3 is 0.1-1 mm.

[0076] The liquid film is formed between the heat dissipation surface and the heat dissipation fins, and under the action of surface tension, it maintains a height of 0.1-1 mm without flowing out.

[0077] Preferably, the dispersion treatment in step S1 is mechanical stirring, ultrasonic dispersion or homogenization dispersion, and the dispersion treatment in step S2 is ultrasonic dispersion or homogenization dispersion.

[0078] The ultrasonic dispersion or homogenization dispersion in step S2 ensures uniform dispersion of the material.

[0079] Example 1

[0080] S1. Add 0.1 g of graphene, 1 g of copper acetate, and 3.52 g of ascorbic acid to 100 ml of ethylene glycol, and after mechanical stirring and ultrasonic dispersion, obtain a mixed solution A;

[0081] S2. Add 0.05 g of polyethylene glycol and 0.1 g of rosin to solution A, and add 1.5 g of silicone grease, and after mechanical stirring and ultrasonic dispersion, obtain a slurry B;

[0082] S3. Apply the slurry B to the heat dissipation surface of the chip, and then cover it with heat dissipation fins, and the slurry forms a liquid film between the heat dissipation surface and the heat dissipation fins, with a thickness of 0.85 mm;

[0083] S4. Heat to 75°C to trigger the reaction and dry.

[0084] Example 2

[0085] S1. Add 0.2 g of graphene, 2 g of copper acetate, and 7.04 g of ascorbic acid to 200 ml of ethylene glycol, and after mechanical stirring and ultrasonic dispersion, obtain a mixed solution A;

[0086] S2. Add 0.1 g of polyethylene glycol and 0.2 g of rosin to solution A, and add 3 g of silicone grease, and after mechanical stirring and ultrasonic dispersion, obtain a slurry B;

[0087] S3. Apply the slurry B to the heat dissipation surface of the chip, and then cover it with heat dissipation fins, and the slurry forms a liquid film between the heat dissipation surface and the heat dissipation fins, with a thickness of 0.85 mm;

[0088] S4. Heat to 75°C to trigger the reaction and dry.

[0089] Example 3

[0090] S1. Add 0.05 g of graphene, 0.5 g of copper acetate, 1.76 g of ascorbic acid into 50 ml of ethylene glycol, and obtain a mixed solution A after mechanical stirring and ultrasonic dispersion;

[0091] S2. Add 0.025 g of polyethylene glycol and 0.05 g of rosin into the solution A, add 0.75 g of silicone grease, and obtain a slurry B after mechanical stirring and ultrasonic dispersion;

[0092] S3. Apply the slurry B to the heat dissipation surface of a chip, then cover the heat dissipation sheet, and a liquid film with a thickness of 0.85 mm is formed between the heat dissipation surface and the heat dissipation sheet;

[0093] S4. Heat to 75℃ to trigger the reaction and dry.

[0094] Example 4

[0095] S1. Add 0.1 g of graphene, 0.05 g of silicon nitride ceramic particles, 1 g of copper acetate, 3.52 g of ascorbic acid into 100 ml of ethylene glycol, and obtain a mixed solution A after mechanical stirring and ultrasonic dispersion;

[0096] S2. Add 0.05 g of polyethylene glycol and 0.1 g of rosin into the solution A, add 1.5 g of silicone grease, and obtain a slurry B after mechanical stirring and ultrasonic dispersion;

[0097] S3. Apply the slurry B to the heat dissipation surface of a chip, then cover the heat dissipation sheet, and a liquid film with a thickness of 0.85 mm is formed between the heat dissipation surface and the heat dissipation sheet;

[0098] S4. Heat to 75℃ to trigger the reaction and dry.

[0099] Example 5

[0100] S1. Add 0.1 g of graphene, 1 g of copper acetate, 3.52 g of ascorbic acid into 5 ml of ethylene glycol, and obtain a mixed solution A after homogenization and dispersion, graphene is treated by oxygen plasma or graphene oxide is used;

[0101] S2. Add 0.1 g of polyvinyl alcohol and 0.1 g of rosin into the mixed solution A, add 2 g of silicone resin, and obtain a mixed slurry B after homogenization and dispersion;

[0102] S3. Apply the slurry B to the heat dissipation surface of a chip, then cover the heat dissipation sheet, and a liquid film with a thickness of 0.7 mm is formed between the heat dissipation surface and the heat dissipation sheet;

[0103] S4. Heat to 75℃ to trigger the reaction and dry.

[0104] Example 6

[0105] S1. The graphene is subjected to oxygen plasma treatment. 0.2 g of graphene, 2 g of copper acetate, and 7.04 g of ascorbic acid are added to 10 ml of ethylene glycol, and a mixed solution A is obtained after homogenization and dispersion;

[0106] S2. 0.2 g of polyvinyl alcohol and 0.2 g of rosin are added to the mixed solution A, 4 g of silicone resin is added, and a mixed slurry B is obtained after homogenization and dispersion;

[0107] S3. The slurry B is coated on the heat dissipation surface of the chip, and then a heat dissipation sheet is covered, so that a liquid film with a thickness of 0.7 mm is formed between the heat dissipation surface and the heat dissipation sheet;

[0108] S4. The reaction is triggered by heating to 75℃ and drying.

[0109] Example 7

[0110] S1. 0.05 g of graphene oxide, 0.5 g of copper acetate, and 1.76 g of ascorbic acid are added to 2.5 ml of ethylene glycol, and a mixed solution A is obtained after homogenization and dispersion;

[0111] S2. 0.05 g of polyvinyl alcohol and 0.05 g of rosin are added to the mixed solution A, 1 g of silicone resin is added, and a mixed slurry B is obtained after homogenization and dispersion;

[0112] S3. The slurry B is coated on the heat dissipation surface of the chip, and then a heat dissipation sheet is covered, so that a liquid film with a thickness of 0.7 mm is formed between the heat dissipation surface and the heat dissipation sheet;

[0113] S4. The reaction is triggered by heating to 75℃ and drying.

[0114] Example 8

[0115] S1. 0.2 g of graphene, 1.5 g of nickel sulfate, and 4.5 g of hydrazine hydrate are added to 5 ml of anhydrous ethanol solvent, and a mixed solution A is obtained after homogenization and dispersion;

[0116] S2. 0.2 g of polyethylene glycol and 0.25 g of rosin are added to the mixed solution A, 2.34 g of silicone grease is added, and a mixed slurry B is obtained after ultrasonic dispersion;

[0117] S3. The slurry B is coated on the heat dissipation surface of the chip, and then a heat dissipation sheet is covered, so that a liquid film with a thickness of 0.5 mm is formed between the heat dissipation surface and the heat dissipation sheet.

[0118] S4. A magnetic field perpendicular to the heat dissipation surface is applied, and the reaction is triggered by heating to 80℃ and drying.

[0119] Example 9

[0120] S1. The graphene is subjected to oxygen plasma treatment, 0.4 g of graphene, 3 g of nickel sulfate, 9 g of hydrazine hydrate are added to 10 ml of anhydrous ethanol solvent, and a mixed solution A is obtained after homogenization and dispersion;

[0121] S2. 0.2 g of polyethylene glycol and 0.25 g of rosin are added to the mixed solution A, 2.34 g of silicon grease is added, and a mixed slurry B is obtained after ultrasonic dispersion;

[0122] S3. The slurry B is coated on the heat dissipation surface of the chip, and then the heat dissipation fin is covered, and a liquid film with a thickness of 0.5 mm is formed between the heat dissipation surface and the heat dissipation fin.

[0123] S4. A magnetic field perpendicular to the heat dissipation surface is applied, heated to 80°C to trigger the reaction and dried.

[0124] Example 10

[0125] S1. 0.1 g of graphene, 0.75 g of nickel sulfate, 2.75 g of hydrazine hydrate are added to 2.5 ml of anhydrous ethanol solvent, and a mixed solution A is obtained after homogenization and dispersion;

[0126] S2. 0.2 g of polyethylene glycol and 0.25 g of rosin are added to the mixed solution A, 2.34 g of silicon grease is added, and a mixed slurry B is obtained after ultrasonic dispersion;

[0127] S3. The slurry B is coated on the heat dissipation surface of the chip, and then the heat dissipation fin is covered, and a liquid film with a thickness of 0.5 mm is formed between the heat dissipation surface and the heat dissipation fin.

[0128] S4. A magnetic field perpendicular to the heat dissipation surface is applied, heated to 80°C to trigger the reaction and dried.

[0129] The technical features of the above-described embodiments can be combined in any manner. In order to make the description concise, all possible combinations of the technical features in the above-described embodiments are not described, but as long as the combinations of the technical features do not contradict, they should be considered as within the scope of the present disclosure.

[0130] The above-described embodiments only express several embodiments of the present application, and the description is more specific and detailed, but it should not be understood as limiting the scope of the patent. It should be noted that for ordinary skilled persons in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are within the scope of the present application. Therefore, the protection scope of the present patent should be subject to the appended claims.

Claims

1. A method for processing a self-generated metal-graphene composite thermal interface material, characterized in that: Applied to chip processing, the processing method includes the following steps: S1. Graphene, a metal salt, and a reducing agent are added to water or an alcohol solvent and dispersed to obtain a mixed solution A; S2. Add at least one of silicone grease or silicone resin to the mixed solution A and disperse to obtain slurry B; S3. Apply slurry B to the heat dissipation surface of the chip to be processed, and cover the heat dissipation surface coated with slurry B with a heat sink, so that slurry B forms a liquid film between the heat dissipation surface and the heat sink; S4. Heating triggers the reaction and maintains the reaction until drying. During the drying process, the solvent in the liquid film evaporates, and the temperature of slurry B rises to initiate a reaction, causing metal to form between the heat dissipation surface and the heat sink. The distance between the heat dissipation surface and the heat sink gradually decreases until the solvent completely evaporates and the heat sink is fixed to the heat dissipation surface of the chip. The metal salt includes at least one element selected from Cu, Ag, Ni, Ti, Au, Al, Sn, Fe, and Co, and the metal salt is an organic metal salt or a metal hydroxide, chloride, sulfate, or nitrate; The organic metal salt is at least one of acetic acid, acetic acid, formic acid or acetylacetonate metal salts; The reducing agent is at least one of ascorbic acid, glucose or hydrazine hydrate; The alcohol solvent is at least one of ethanol, ethylene glycol, diethylene glycol, dipropylene glycol, glycerol or terpineol; The graphene includes graphene and its derivatives, and the mass fraction of the graphene in the composite material is 0.02-10%; The mass fraction of the silicone grease or the silicone resin in the composite material is 1-10%; It also includes adding at least one of a thickener, a sintering aid, a film-forming agent or a thixotropic agent; The thickener is polyethylene glycol or polyvinyl alcohol, the sintering aid is an alkaline earth metal oxide, the film-forming agent is at least one of hydrogenated rosin, polymerized rosin or water-white rosin, and the thixotropic agent is at least one of hydrogenated castor oil or polyamide; When a magnetic metal is used, the magnetic field is applied in step S4, and the direction of the applied magnetic field is perpendicular to the heat dissipation surface.

2. The method for processing a self-generated metal-graphene composite thermal interface material according to claim 1, characterized in that: The heating temperature in step S4 is 20-300°C.

3. The method for processing a self-generated metal-graphene composite thermal interface material according to claim 1, characterized in that: The method further comprises adding high thermal conductivity particles, wherein the mass fraction of the metal salt and the high thermal conductivity particles in the composite material is 50-97%.

4. A method for processing a self-generated metal-graphene composite thermal interface material according to any one of claims 1 to 3, characterized in that: The dispersion treatment in step S1 is mechanical stirring, ultrasonic dispersion or homogeneous dispersion, and the dispersion treatment in step S2 is ultrasonic dispersion or homogeneous dispersion.

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