Power module assembly and vehicle

Abstract

The invention discloses a power module assembly and a vehicle. The power module assembly comprises a module body; the chip module comprises a chip substrate and a chip, the chip substrate comprises an AC power area, a DC positive electrode power area and two DC negative electrode power areas, the two DC negative electrode power areas are distributed in the first direction, the AC power area and the DC positive electrode power area are distributed between the two DC negative electrode power areas in the second direction, and the first direction is perpendicular to the second direction; wherein the AC power area and the DC positive electrode power area are respectively provided with N chips, the N chips of the DC positive electrode power area are respectively electrically connected with the AC power area, the N chips of the AC power area are respectively electrically connected with the DC negative electrode power area, the N chips are symmetrically distributed, the symmetrical line extends along the second direction, and N is a positive odd number greater than 1. The power module assembly can be compatible with the arrangement of the odd number of chips and the even number of chips, the utilization rate of the chips is improved, and the power module assembly is lower in cost, higher in efficiency and wider in application range.

Description

Technical Field

[0001] The present invention relates to the technical field of power electronics, and in particular to a power module assembly and a vehicle having the power module assembly. Background Art

[0002] SiC power modules are made up of multiple SiC chips packaged in parallel, and the number of chips needs to be designed according to specific performance requirements. Under the premise of achieving the required performance, the fewer the number of chips, the lower the module cost. In order to reduce the number of chips, on the one hand, it is necessary to enhance the heat dissipation capacity of the module, and on the other hand, it is necessary to reduce the module stray inductance to reduce switching losses. The current low thermal resistance module process is used to reduce the heat dissipation capacity, but its cost is relatively high, and the electrical performance of the system can be improved through a symmetrical layout, but the existing symmetrical layout is only compatible with an even number of chips. Under some requirements, the optimal number of chips is an odd number, resulting in the actual number of chips needing to be one more than the optimal value to meet the electrical performance requirements, resulting in over-design and increased costs, and there is room for improvement. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention proposes a power module assembly, which has good stability and electrical performance, and is compatible with the settings of odd and even numbers of chips, thereby improving the utilization rate of the chips, having lower cost, higher efficiency, and wider application range.

[0004] A power module assembly according to an embodiment of the present invention comprises: a module body; at least one chip module, the chip module comprising a chip substrate and a chip, the chip substrate comprising an AC power area, a DC positive power area and two DC negative power areas, the two DC negative power areas are distributed along a first direction, the AC power area and the DC positive power area are distributed between the two DC negative power areas along a second direction, and the first direction is perpendicular to the second direction; wherein the AC power area and the DC positive power area are both provided with N chips, the N chips in the DC positive power area are respectively electrically connected to the AC power area, the N chips in the AC power area are respectively electrically connected to the DC negative power area, the N chips are symmetrically distributed and the symmetry line extends along the second direction, and N is a positive odd number greater than 1.

[0005] According to the power module assembly of the embodiment of the present invention, N chips are symmetrically distributed in the chip module, which reduces the occurrence of problems such as high switching losses caused by oscillation between chips, thereby improving the stability and electrical performance of the power module assembly. The number of chips is a positive odd number, so that the chip module can be compatible with the settings of odd and even numbers of chips, thereby improving the utilization rate of the chips, having lower costs, higher efficiency, and a wider range of applications.

[0006] According to the power module assembly of some embodiments of the present invention, the AC power region and the DC positive power region both include a middle control region;

[0007] The N chips include an end chip and multiple side chips, the end chip is located at the end of the middle control area in the second direction, the multiple side chips are symmetrically distributed on both sides of the middle control area in the second direction, and the side chips are located between the middle control area and the DC negative power area on the corresponding side.

[0008] According to some embodiments of the power module assembly of the present invention, the end chip of the AC power zone is located at one end of the middle control zone away from the DC positive power zone, and the end chip of the DC positive power zone is located at one end of the middle control zone away from the AC power zone.

[0009] According to the power module assembly of some embodiments of the present invention, the end chip of the AC power zone is electrically connected to the two arms of the DC negative power zone through the end chip;

[0010] And / or, the end chip of the DC positive power zone is electrically connected to the two arms of the AC power zone.

[0011] According to the power module assembly of some embodiments of the present invention, there are multiple side chips located on the same side of the central control area, and the multiple side chips are spaced apart and distributed along the second direction.

[0012] According to some embodiments of the power module assembly of the present invention, at least two of the plurality of side chips located on the same side of the middle control region of the AC power region share a first side connection portion, and the first side connection portion is used to electrically connect to the DC negative power region on the corresponding side;

[0013] And / or, at least two of the plurality of side chips located on the same side of the middle control zone of the DC positive power zone share a second side connection portion, and the second side connection portion is used to electrically connect to the AC power zone on the corresponding side.

[0014] According to the power module assembly of some embodiments of the present invention, the central control area is provided with a signal terminal.

[0015] According to the power module assembly of some embodiments of the present invention, the AC power zone is connected to an AC terminal at an end away from the DC positive power zone, the DC positive power zone is connected to a P terminal at an end away from the AC power zone, and each of the DC negative power zones is connected to an N terminal.

[0016] In the power module assembly according to some embodiments of the present invention, the P terminal and the N terminal are both located at the same end of the chip module.

[0017] In the power module assembly according to some embodiments of the present invention, the distance between two adjacent chips is X, and X≥2.5 mm.

[0018] According to the power module assembly of some embodiments of the present invention, the chip module is further provided with an NTC placement area, the NTC placement area is used to connect the thermistor, and the NTC placement area is provided with a signal terminal.

[0019] The power module assembly according to some embodiments of the present invention further includes a heat dissipation substrate, the heat dissipation substrate is connected to the bottom of the module body, and the heat dissipation substrate is formed with heat dissipation pin fins;

[0020] It also includes a protective plate, which is covered on the top of the chip module.

[0021] According to the power module assembly of some embodiments of the present invention, there are multiple chip modules, and the multiple chip modules are distributed at intervals along the first direction.

[0022] The present invention also provides a vehicle.

[0023] A vehicle according to an embodiment of the present invention is provided with a power module assembly according to any one of the above embodiments.

[0024] The advantages of the vehicle and the above-mentioned power module assembly over the prior art are the same and will not be described in detail here.

[0025] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0027] Figure 1 FIG. 1 is a schematic diagram of the structure of a single chip module of a power module assembly according to an embodiment of the present invention. Figure 1 ;

[0028] Figure 2 is a side view of a single chip module of a power module assembly according to an embodiment of the present invention;

[0029] Figure 3 FIG. 1 is a schematic diagram of the structure of a single chip module of a power module assembly according to an embodiment of the present invention. Figure 2 ;

[0030] Figure 4 is a schematic diagram of a single chip module of a power module assembly according to an embodiment of the present invention;

[0031] Figure 5 is a schematic diagram of the connection of a chip, an AC terminal, and a second side connection portion in the AC power region of a single chip module of a power module assembly according to an embodiment of the present invention;

[0032] Figure 6 Schematic diagram of the structure of a power module assembly according to an embodiment of the present invention Figure 1 ;

[0033] Figure 7 Schematic diagram of the structure of a power module assembly according to an embodiment of the present invention Figure 2 ;

[0034] Figure 8 Schematic diagram of the structure of a power module assembly according to an embodiment of the present invention Figure 3 ;

[0035] Fig. 9 Schematic diagram of the structure of a power module assembly according to an embodiment of the present invention Figure 4 .

[0036] Reference numerals:

[0037] Power module assembly 100,

[0038] Template body 1, chip module 2, chip substrate 21, AC power area 211, AC terminal 2111, lower bridge control area 2112, DC positive power area 212, P terminal 2121, upper bridge control area 2122, DC negative power area 213, N terminal 2131, chip 22, end chip 221, side chip 222, first side connection part 23, second side connection part 24, signal terminal 25, NTC placement area 26, thermistor 261, copper connector 27, heat dissipation substrate 3, heat dissipation pin fins 31, and protective plate 4. DETAILED DESCRIPTION

[0039] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0040] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0041] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0042] Unless otherwise specified, the front-to-back direction in the present application is the longitudinal direction of the vehicle, that is, the X direction; the left-right direction is the lateral direction of the vehicle, that is, the Y direction; and the up-down direction is the vertical direction of the vehicle, that is, the Z direction.

[0043] Reference below Figure 1-Figure 9 A power module assembly 100 according to an embodiment of the present invention is described. By arranging N chips 22 symmetrically distributed in the chip module 2, the occurrence of problems such as oscillation between the chips 22 and resulting in high switching losses is reduced, thereby improving the stability and electrical performance of the power module assembly 100. The number of chips 22 is a positive odd number, so that the chip module 2 can be compatible with the settings of odd and even numbers of chips 22, thereby improving the utilization rate of the chips 22, having lower costs, higher efficiency, and a wider range of applications.

[0044] like Figure 1-Figure 9 As shown, a power module assembly 100 according to an embodiment of the present invention includes: a module body 1 and a chip module 2 .

[0045] Among them, the module body 1 is the supporting structure of the power module assembly 100. The module body 1 can be constructed as a flat structure, which can realize the assembly of other structures such as at least one chip module 2 to achieve the integrated setting of all structures, and the stability of each structure of the power module assembly 100 is better.

[0046] The chip module 2 includes a chip substrate 21 and a chip 22. The chip substrate 21 includes an AC power area 211, a DC positive power area 212 and two DC negative power areas 213. The two DC negative power areas 213 are distributed along a first direction. The AC power area 211 and the DC positive power area 212 are distributed between the two DC negative power areas 213 along a second direction. The first direction is perpendicular to the second direction.

[0047] Specifically, there is at least one chip module 2, and at least one chip module 2 is connected to the module body 1, so that the connection and fixation of the chip module 2 can be realized. The chip module 2 includes a chip substrate 21 and a chip 22, such as Figure 1 , Figure 3 , Figure 4 and Figure 6 As shown, the chip substrate 21 includes four areas, namely an AC power area 211, a DC positive power area 212 and two DC negative power areas 213, wherein the AC power area 211 is an AC power area, which is used to process AC power and involves functions such as AC input, conversion and output, and the DC positive power area 212 is a DC positive power area, which is used to process the positive part of DC power. DC power is a unidirectional current. The size, direction and voltage of the current can be adjusted in the DC positive power area 212, and the DC negative power area 213 is a DC negative power area, which is used to process the negative part of DC power. The size, direction and voltage of the current can be adjusted in the DC negative power area 213.

[0048] And the two DC negative power areas 213 are spaced apart along the first direction, and are used for the arrangement of the AC power area 211 and the DC positive power area 212. The two DC negative power areas 213 are located in the outer area of ​​the chip module 2, and the AC power area 211 and the DC positive power area 212 are located in the inner area of ​​the chip module 2. The AC power area 211 and the DC positive power area 212 are spaced apart along the second direction, and are both located between the two DC negative power areas 213. The two DC negative power areas 213 extend along the second direction, and the AC power area 211 can be distributed around the DC positive power area 212 on both sides close to the DC negative power area 213. In this way, the two DC negative power areas 213, the AC power area 211 and the DC positive power area 212 can be symmetrically distributed along the second direction, and the overall structural layout is reasonable and symmetrical, which is conducive to the symmetrical arrangement of the chip 22.

[0049] Among them, the AC power area 211 and the DC positive power area 212 are both provided with N chips 22, the N chips 22 of the DC positive power area 212 are electrically connected to the AC power area 211 respectively, and the N chips 22 of the AC power area 211 are electrically connected to the DC negative power area 213 respectively, the N chips 22 are symmetrically distributed and the symmetry line extends along the second direction, and N is a positive odd number greater than 1.

[0050] Specifically, the AC power zone 211 and the DC positive power zone 212 are both formed by connecting N chips 22 in parallel, wherein the N chips 22 of the DC positive power zone 212 are electrically connected to the AC power zone 211 respectively, and the connection and fixation across the power zones can be achieved through conductive elements to achieve circuit conduction between the AC power zone 211 and the DC positive power zone 212, and the N chips 22 of the AC power zone 211 are electrically connected to the DC negative power zone 213 respectively, and the connection method is the same as the above-mentioned connection method, which can achieve circuit conduction between the AC power zone 211 and the DC negative power zone 213.

[0051] Among them, the N chips 22 of the AC power zone 211 and the N chips 22 of the DC positive power zone 212 are respectively arranged to be symmetrically distributed relative to the center line of the AC power zone 211, and the extension direction of the central symmetry line is parallel to the second direction, that is, the N chips 22 of the AC power zone 211 and the N chips 22 of the DC positive power zone 212 can be arranged to be symmetrically distributed in the first direction, so that the overall structure of the chip module 2 can be symmetrically distributed relative to the second direction, the overall structure distribution is reasonable, and it is convenient for the assembly of each structure and the line connection.

[0052] Furthermore, the inconsistency of the switching speed / time delay of each chip 22 will lead to the transient inconsistency between the potentials of each point, and will be fed back to the gate and power pole through the Miller capacitance and the common emitter / common source inductance, causing excitation; during the switching process of the chip 22, when it is in the Miller platform, the gate has the strongest control ability for DS / CE, and the forward gain is the largest. The capacitance of the distributed capacitance in the chip 22 and the inductance of the module package are superimposed. At this moment, the forward gain is large, the negative phase angle is large, and it is easy to form a strong oscillation, which affects the stability of the chip module 2. The high-frequency switching of the chip 22 will subject it to greater voltage and current stress, which reduces the electrical performance of the chip module 2. In this embodiment, the symmetrical distribution of the chips 22 that are prone to oscillation can make the parasitic parameters of the chip 22 consistent, reduce the excitation of the inconsistent switching of the chip 22, reduce the amplitude and phase margin of the coupling between the chips 22, and balance the voltage and current stress of each chip 22 to improve the electrical performance of the chip module 2.

[0053] The number of chips 22 is set to a positive odd number greater than 1, so that the chip module 2 includes an odd number of chips 22, and the odd number of chips 22 are distributed in parallel, and the N chips 22 in the chip module 2 can be changed to an even number of chips 22 in parallel after removing a single chip 22, and the electrical / thermal performance is still excellent at this time, and the setting method is not unique, and can be selectively set according to the actual electrical performance requirements. Among them, the chips 22 can be set to three, five, seven, nine, etc.

[0054] Therefore, in the existing symmetrical layout structure, the power module with excellent electrical performance is only compatible with an even number of chips 22. Under some requirements, the optimal number of chips 22 is an odd number, resulting in the actual number of chips 22 needing to be one more than the optimal value. Although the even number of chip modules 2 meets the electrical performance requirements, it will cause over-design and cost increase. Through the distribution of the chip modules 2 and the setting of an odd number of chips 22 in this embodiment, the problem that the existing power module assembly 100 cannot use an odd number of chips 22 is solved, and the problem of high switching loss caused by oscillation between chips 22 is reduced, thereby improving the utilization rate of the chip 22, lowering the cost and increasing the efficiency.

[0055] In some embodiments, the AC power zone 211 and the DC positive power zone 212 both include a middle control zone. The middle control zone of the AC power zone 211 is used to control the AC power zone 211 and each chip 22 therein, and can realize the opening or closing of each chip 22. Figure 1 , Figure 4 and Figure 6 As shown, a central control area is provided in the middle of the AC power area 211, so that the central control area occupies the central position of the AC power area 211, and the central control area is completely surrounded by the AC power area 211. The AC power area 211 outside the central control area is used for arranging structures such as the chip 22, and the central control area of ​​the DC positive power area 212 is used to control the DC positive power area 212 and each chip 22 therein, so as to realize the opening or closing of each chip 22, as shown in FIG. Figure 1 , Figure 4 and Figure 6 As shown, a middle control area is provided in the middle of the DC positive power area 212, so that the middle control area occupies the middle position of the DC positive power area 212, and the middle control area is completely surrounded by the DC positive power area 212, and the DC positive power area 212 outside the middle control area is used for the arrangement of structures such as the chip 22.

[0056] The N chips 22 include an end chip 221 and multiple side chips 222. The end chip 221 is located at the end of the middle control area in the second direction, and the multiple side chips 222 are symmetrically distributed on both sides of the middle control area in the second direction. The side chips 222 are located between the middle control area and the DC negative power area 213 on the corresponding side.

[0057] Specifically, Figure 1 and Figure 4As shown, the N chips 22 of the AC power zone 211 are distributed around the central control zone, and among the N chips 22, an end chip 221 is located at one end of the central control zone in the second direction, and multiple side chips 222 are symmetrically distributed on both sides of the central control zone along the second direction, that is, multiple side chips 222 are distributed through the central control zone in the first direction, and the AC power zone 211 and the DC positive power zone 212 are distributed between the two DC negative power zones 213 along the second direction. Then, the multiple side chips 222 of the AC power zone 211 are located between its central control zone and the DC negative power zone 213 on the corresponding side, and the multiple side chips 222 of the DC positive power zone 212 are located between its central control zone and the DC negative power zone 213 on the corresponding side, and the distribution mode of the N chips 22 of the DC positive power zone 212 is the same as that of the N chips 22 of the AC power zone 211, so that the arrangement and installation of each chip 22 are simpler and more convenient.

[0058] The number of the side chips 222 may be two, four, six, eight, etc.

[0059] Therefore, through the above-mentioned settings, the N chips 22 in the AC power zone 211 can be symmetrically distributed along the second direction at the periphery of the central control zone, and the N chips 22 in the DC positive power zone 212 can be symmetrically distributed along the second direction at the periphery of the central control zone. Such a symmetrical arrangement can ensure that the current is more evenly distributed in the entire system, and help to avoid a chip 22 from being subjected to excessive current load, thereby preventing overheating and performance degradation.

[0060] In some embodiments, the end chip 221 of the AC power zone 211 is located at one end of the central control zone away from the DC positive power zone 212 , and the end chip 221 of the DC positive power zone 212 is located at one end of the central control zone away from the AC power zone 211 .

[0061] Specifically, in Figure 4In the schematic diagram, the first direction may be the left-right direction, the second direction may be the up-down direction, the AC power zone 211 and the DC positive power zone 212 are distributed in the up-down direction, and the two DC negative power zones 213 are located on both sides of the AC power zone 211 and the DC positive power zone 212 in the left-right direction, wherein the end chip 221 of the AC power zone 211 is located at one end of the central control zone away from the DC positive power zone 212, so that the upper space of the central control zone can be occupied, and the lower space of the central control zone can be set smaller, and the end chip 221 of the DC positive power zone 212 is located at one end of the central control zone away from the AC power zone 211, so that the lower space of the central control zone can be occupied, and the upper space of the central control zone can be set smaller, thereby making the area of ​​the AC power zone 211 and the DC positive power zone 212 smaller, so that the overall structure is compact and the cost is lower. The structure is symmetrical, the current distribution is more uniform, and the electrical performance is better.

[0062] In some embodiments, the end chip 221 of the AC power zone 211 is electrically connected to the two arms of the DC negative power zone 213, wherein the AC power zone 211 and the DC negative power zone 213 are two separate areas, and the end chip 221 of the AC power zone 211 is electrically connected to the two DC negative power zones 213 respectively, so that the circuit connection between the end chip 221 of the AC power zone 211 and the DC negative power zones 213 on both sides can be achieved, so that the current in the DC negative power zones 213 on both sides can flow to the end chip 221 of the AC power zone 211, and the current of the AC power zone 211 can flow from its end chip 221 into the DC negative power zones 213 on both sides respectively, so that the current flow between the two DC negative power zones 213 and the AC power zone 211 can be achieved.

[0063] The D pole at the bottom of the end chip 221 of the AC power zone 211 is electrically connected to the AC power zone 211, and the top S pole of the end chip 221 of the AC power zone 211 is electrically connected to the DC negative power zones 213 on both sides through two copper connectors 27. The two copper connectors 27 penetrate the AC power zone 211 and are connected to the two DC negative power zones 213, so the connection is reliable and the current flow is highly stable.

[0064] In other embodiments, the end chip 221 of the DC positive power zone 212 is electrically connected to the two arms of the AC power zone 211, wherein the AC power zone 211 and the DC positive power zone 212 are two separate areas, and at least a portion of the AC power zone 211 extends to both sides of the DC positive power zone 212 in a first direction, and the two are symmetrically distributed along a second direction. The end chip 221 of the DC positive power zone 212 is electrically connected to the AC power zones 211 on both sides, respectively, so that the circuit connection between the end chip 221 of the DC positive power zone 212 and the AC power zones 211 on both sides can be achieved, so that the current in the DC positive power zones 212 on both sides can flow to the AC power zone 211.

[0065] The D pole at the bottom of the end chip 221 of the DC positive power zone 212 is electrically connected to the DC positive power zone 212, and the top S pole of the end chip 221 of the DC positive power zone 212 is electrically connected to the AC power zones 211 on both sides through two copper connectors 27, so that the two copper connectors 27 penetrate the DC positive power zone 212 and connect with the AC power zone 211, and the connection is reliable and the current flow is highly stable.

[0066] In some embodiments, there are multiple side chips 222 located on the same side of the central control area, and the multiple side chips 222 are spaced apart and distributed along the second direction.

[0067] Specifically, Figure 1 As shown, the central control area can be set to extend along the second direction, and a plurality of side chips 222 are distributed on each side of the central control area on both sides of the second direction. The plurality of side chips 222 are distributed spaced apart along the second direction, and the number of side chips 222 on both sides is the same, and the plurality of side chips 222 on both sides are distributed one by one. In this way, the plurality of side chips 222 can be distributed in pairs on both sides of the central control area. Such an arrangement can simplify the circuit layout and wiring process, and the positions of each chip 22 and circuit elements are relatively fixed, which can make it easier to plan the circuit path and connection method, and help reduce wiring errors and reduce manufacturing costs. At the same time, the symmetrical layout can also improve the reliability and maintainability of the circuit. Among them, in this embodiment, the side chips 222 on the same side of the central control area are two, and three, four, etc. can also be set, and selection is made according to actual performance requirements.

[0068] Therefore, the symmetrical arrangement of the chip 22 can improve the performance and stability of the entire system. By optimizing the current distribution, enhancing the symmetry of signal processing and simplifying the circuit layout, the power consumption of the system can be reduced, the signal quality can be improved, and the anti-interference ability of the system can be enhanced.

[0069] In some embodiments, at least two of the plurality of side chips 222 located on the same side of the middle control area of ​​the AC power area 211 share a first side connection portion 23 for electrically connecting to the DC negative power area 213 on the corresponding side.

[0070] Specifically, Figure 1 and Figure 2 As shown, a plurality of side chips 222 are distributed on the left and right sides of the central control area of ​​the AC power zone 211, and at least two side chips 222 on the left are electrically connected to the DC negative power zone 213 on the left through the first side connection portion 23, so that the current in the DC negative power zone 213 can flow to the two side chips 222 of the AC power zone 211 through the first side connection portion 23, and the current of the AC power zone 211 can flow from its side chip 222 through the first side connection portion 23 into the DC negative power zone 213, and the connection method of the plurality of side chips 222 on the right side is the same as that of the plurality of side chips 222 on the left side, so that the current can flow between the two DC negative power zones 213 and the AC power zone 211, and the structure is symmetrical, the current flow direction is symmetrically distributed, the overall structural stability is good, and it is convenient for line distribution, routing and later maintenance.

[0071] Among them, the first side connection part 23 can be constructed as a Y-shaped copper connector, which can realize the electrical connection between multiple side chips 222 and the DC negative power area 213 on the corresponding side across the area, and the connection method is simple and the connection stability is good.

[0072] In other embodiments, at least two of the plurality of side chips 222 located on the same side of the central control area of ​​the DC positive power zone 212 share a second side connection portion 24 for electrically connecting to the AC power zone 211 on the corresponding side.

[0073] Specifically, Figure 1 and Figure 2 As shown, a plurality of side chips 222 are distributed on the left and right sides of the central control area of ​​the DC positive power zone 212, and at least two side chips 222 on the left are electrically connected to the AC power zone 211 on the left through the second side connection portion 24, so that the current in the DC positive power zone 212 can flow from its side chip 222 to the AC power zone 211 through the first side connection portion 23, and the connection method of the plurality of side chips 222 on the right is the same as that of the plurality of side chips 222 on the left, so that the current flow between the AC power zone 211 and the DC positive power zone 212 can be realized, and the structure is symmetrical, the current flow direction is symmetrically distributed, the overall structural stability is good, and it is convenient for line distribution, routing and later maintenance.

[0074] Among them, the second side connection part 24 can be constructed as a Y-shaped copper connector, which can realize the electrical connection between multiple side chips 222 and the DC negative power area 213 on the corresponding side across the area, and the connection method is simple and the connection stability is good.

[0075] The upper surfaces of the AC power area 211, the DC positive power area 212, and the DC negative power area 213 are all AMB copper layers, which have good current carrying and thermal conductivity, can realize the flow of current, and can realize the heat dissipation of the chip 22. Among them, the N chips 22 of the AC power area 211 are connected to the AMB copper layer, the AC terminal 2111 is connected to the AMB copper layer, and the other end of the second side connection part 24 of the multiple side chips 222 of the DC positive power area 212 is connected to the AMB copper layer, such as Figure 5 The three points ABC shown are all on the continuous AMB copper layer.

[0076] In some embodiments, the central control area is provided with a signal terminal 25, wherein the central control area of ​​the AC power area 211 and the central control area of ​​the DC positive power area 212 are both provided with a signal terminal 25, and both sets of signal terminals 25 are used to connect to an external control structure. In this way, the central control area of ​​the AC power area 211 and the central power area of ​​the DC positive power area 212 can be electrically connected to the external control structure. When the power module assembly 100 is working, the external control structure will send a signal instruction to the power module assembly 100. After receiving the instruction, the central control area will control the multiple chips 22 on the periphery of the central control area of ​​the AC power area 211 and the multiple chips 22 on the periphery of the central control area of ​​the DC positive power area 212 to turn on or off to achieve the corresponding working mode.

[0077] Among them, the AC power zone 211 is the lower bridge, the middle control zone is the lower bridge control zone 2112, and the G pole and S pole at the top of an end chip 221 and multiple side chips 222 located outside the lower bridge control zone 2112 are respectively electrically connected to the lower bridge control zone 2112, and the connection method can be connected to the copper surfaces corresponding to G and S of the lower bridge control zone 2112 through aluminum and copper bonding wires. In this way, the lower bridge control zone 2112 can control the working status of multiple chips 22, and the DC positive power zone 212 is the upper bridge, the middle control zone is the upper bridge control zone 2122, and the connection between the upper bridge control zone 2122 and the lower bridge control zone 2112 and the multiple chips 22 on its periphery is the same as described above, and the copper surfaces of the upper bridge control zone 2122 and the lower bridge control zone 2112 are connected to the external circuit through signal terminals 25 perpendicular to the chip substrate 21, so that the orderly operation of each chip 22 can be achieved, and the working status of each chip 22 is more accurate and reliable.

[0078] In some embodiments, the AC power zone 211 is connected to an AC terminal 2111 at one end away from the DC positive power zone 212 , the DC positive power zone 212 is connected to a P terminal 2121 at one end away from the AC power zone 211 , and each DC negative power zone 213 is connected to an N terminal 2131 .

[0079] Specifically, the power module assembly 100 is connected between a power source and a load, wherein the load may be a structure such as a drive motor. The AC power zone 211 is a lower bridge side, used to be connected to the load, and the DC positive power zone 212 is an upper bridge side, used to be connected to the power source, and the AC power zone 211 is provided with an AC terminal 2111 at one end away from the DC positive power zone 212, and one end of the AC terminal 2111 is electrically connected to the AC power zone 211, and the other end is electrically connected to the load, so that current can flow between the AC power zone 211 and the load. The DC positive power zone 212 is provided with a P terminal 2121 at one end away from the AC power zone 211, and one end of the P terminal 2121 is electrically connected to the DC positive power zone 212, and the other end is connected to the positive pole of the power supply. In addition, the DC negative power zones 213 on both sides are respectively provided with an N terminal 2131, and one end of the N terminal 2131 is electrically connected to the DC negative power zone 213, and the other end is connected to the negative pole of the power supply, so that current flow between the DC positive power zone 212 and the DC negative power zone 213 and the power supply can be realized.

[0080] In actual operation, the DC positive power zone 212, the AC power zone 211 and the chips 22 therein are switched on alternately, and the output of the current is controlled by controlling the time of the alternate switching on. For example, when the current needs to flow out from the AC terminal 2111 to the load, the DC positive power zone 212 is switched on, and the current will flow out from the AC terminal 2111 of the AC power zone 211 through the multiple chips 22 therein, and after the DC positive power zone 212 is switched off, the AC power zone 211 is switched on, and the current will flow from the negative pole of the power source through the DC negative power zone 213 from the AC power zone 211 to the load, so as to control the output size of the current, and the switching method is reliable and the current output precision is high.

[0081] In some embodiments, the P terminal 2121 and the N terminal 2131 are both located at the same end of the chip module 2. Through the P terminal 2121 and the N terminal 2131, the same side of the chip module 2 can be connected to the positive and negative poles of the power supply, respectively, so that the current of the power supply can flow into and out of the chip module 2 from the same side of the chip module 2, and the AC terminal 2111 and the P terminal 2121 and the N terminal 2131 are distributed at both ends of the chip module 2, so that the current can flow into one side of the chip module 2 and then flow out from the opposite other side.

[0082] Therefore, through the above-mentioned setting, the connection length of the line between the chip module 2 and the power supply can be shortened, the line layout is simplified, and the subsequent line maintenance and system repair are convenient. The AC terminal 2111 is relatively distributed with the P terminal 2121 and the N terminal 2131, so that the respective connection lines can be separated, the line layout is clearer, the wiring accuracy is high, and errors can be avoided.

[0083] In some embodiments, the distance between two adjacent chips 22 is X, and X≥2.5 mm. Figure 4 The spacing X marked as shown, and the spacing X between two adjacent chips 22 can be taken as: 2.5mm, 2.8mm, 3.0mm, 3.3mm, 3.5mm, 3.8mm, 4.0mm, etc. By setting the above multiple values, the two adjacent chips 22 can be separated by a reliable spacing, the heat distribution of multiple chips 22 is uniform, and the thermal coupling will be lower, which will reduce the temperature fluctuation between the chips 22, and can reduce the local operating temperature of the chip module 2, reduce thermal stress, and have high safety and long service life. And the thermal resistance will be smaller, which is conducive to the heat transfer between the chips 22, and the heat dissipation requirements between the chip modules 2 can be increased to improve the working stability of the chip module 2. And the spacing between two adjacent chips 22 is not limited to the above, and can be selectively set according to the actual space size and performance requirements.

[0084] Among them, the distance between two adjacent chips 22 cannot be set too large. Although a too large distance can meet the operating temperature requirements of the chip module 2, it will increase the overall size of the chip module 2 and increase the line layout and line length, thereby increasing the setting cost. The distance between two adjacent chips 22 cannot be set too small. A too small distance will increase the thermal coupling and thermal resistance between the chips 22, causing the temperature fluctuation of the chip module 2 to increase, and local overheating is prone to occur, which is not conducive to the stable operation of the chip module 2.

[0085] In some embodiments, the chip module 2 is further provided with an NTC placement area 26 , the NTC placement area 26 is used to connect the thermistor 261 , and the NTC placement area 26 is provided with a signal terminal 25 .

[0086] Specifically, an NTC placement area 26 is provided in the chip module 2, and the thermistor 261 can be installed in a set area, which is convenient for the user to identify and install when the user installs, and is convenient for maintenance and disassembly. Among them, the NTC placement area 26 is provided on one side of the AC power area 211 of the chip module 2, and is spaced apart from the AC power area 211, the DC positive power area 212 and the two DC negative power areas 213, and does not occupy the space of each power area, and the thermistor 261 can be welded and connected to the copper surface in the NTC placement area 26, and the resistance of the thermistor 261 changes with the change of temperature, and the copper surface in the NTC placement area 26 is vertically connected with a signal terminal 25, and the signal terminal 25 is connected to an external circuit. The external circuit obtains the temperature at the thermistor 261 by measuring the resistance of the thermistor 261, so as to realize the measurement of the temperature of the chip 22.

[0087] Therefore, the heat of the chip module 2 can be effectively monitored and tested through the thermistor 261 , thereby achieving temperature monitoring and control to ensure the working stability and reliability of the chip module 2 .

[0088] In some embodiments, the power module assembly 100 further includes a heat dissipation substrate 3 , which is connected to the bottom of the module body 1 and has heat dissipation pin fins 31 formed thereon.

[0089] Specifically, the heat dissipation substrate 3 is used to dissipate heat from the chip module 2. Figure 2 and Figure 7 As shown, the heat dissipation substrate 3 is connected to the bottom of the module body 1, and the outer structure of the heat dissipation substrate 3 is matched with the outer structure of the module body 1. The top of the module body 1 is connected to the chip module 2, and the heat dissipation substrate 3 is provided with heat dissipation pin fins 31 on the side away from the chip module 2, which is used to improve the heat diffusion of the heat dissipation substrate 3.

[0090] When the power module assembly 100 is working, each power zone and each chip 22 in the chip module 2 will generate heat after operation. The heat of the chip 22 can diffuse to the corresponding AC power zone 211 and DC positive power zone 212 through the bottom, and can also diffuse outward to the adjacent DC negative power zone 213 through the first side connection part 23 and the second side connection part 24, so as to avoid the internal temperature of the chip 22 from continuing to rise. The heat dissipation substrate 3 absorbs the temperature of the module body 1 and diffuses it through the heat dissipation pin fins 31 to diffuse the heat to the outside of the power module assembly 100, so as to realize the heat dissipation of the power module assembly 100, and the heat dissipation can be performed at any time to improve the heat dissipation effect.

[0091] The heat dissipation substrate 3 may also be configured as a heat dissipation plate or heat dissipation slots, etc., as long as the heat dissipation of the heat dissipation substrate 3 is improved.

[0092] The chip module 2 also includes a protective plate 4, which is arranged on the top of the chip module 2 to protect the chip module 2. The protective plate 4 can be made of plastic material, such as Figure 8 and Fig. 9 As shown, the outer structure of the protective plate 4 can be matched with the outer structure of the chip module 2. During assembly, the protective plate 4 is wrapped around the chip module 2, and the gap formed between its surface and the chip substrate 21 can be filled and protected by other packaging methods such as potting, so as to achieve sealing and protection of the chip module 2, thereby ensuring the reliability of the chip module 2.

[0093] In some embodiments, there are multiple chip modules 2, and the multiple chip modules 2 are spaced apart along the first direction, and the spacing between two adjacent chip modules 2 is the same. The multiple chip modules 2 are detachably connected to the module body 1, and the integrated arrangement of the multiple chip modules 2 can be realized, wherein, Figure 6 and Fig. 9 As shown, there are three chip modules 2, the three chip modules 2 are evenly spaced apart along the first direction, and the three chip modules 2 have the same structure. The three chip modules 2 are respectively connected to the power supply through a P terminal 2121 and two N terminals 2131, and the AC terminals 2111 of the three chip modules 2 are respectively connected to the load. The overall structure is highly symmetrical, so that the power module assembly 100 has good stability and good electrical performance.

[0094] Therefore, through the above-mentioned configuration, the direct current of the power source can be converted into alternating current through the power module assembly 100 to meet the power demand of the AC motor and the like.

[0095] The present invention also provides a vehicle.

[0096] According to the vehicle of the embodiment of the present invention, a power module assembly 100 of any one of the above-mentioned embodiments is provided. By symmetrically distributing N chips 22 in the chip module 2, the occurrence of problems such as high switching loss caused by oscillation between the chips 22 is reduced, thereby improving the stability and electrical performance of the power module assembly 100. The number of chips 22 is a positive odd number, so that the chip module 2 can be compatible with the settings of odd and even numbers of chips 22, thereby improving the utilization rate of the chips 22, and having lower cost, higher efficiency, and a wider range of applications.

[0097] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0098] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A power module assembly, characterized in that: include: Module body; at least one chip module, the chip module comprising a chip substrate and a chip, the chip substrate comprising an AC power area, a DC positive power area and two DC negative power areas, the two DC negative power areas are distributed along a first direction, the AC power area and the DC positive power area are distributed between the two DC negative power areas along a second direction, and the first direction is perpendicular to the second direction; Wherein, the AC power zone and the DC positive power zone are each provided with N chips, the N chips in the DC positive power zone are electrically connected to the AC power zone respectively, the N chips in the AC power zone are electrically connected to the DC negative power zone respectively, the N chips are symmetrically distributed and the symmetry line extends along the second direction, and N is a positive odd number greater than 1.

2. The power module assembly according to claim 1, characterized in that: The AC power zone and the DC positive power zone both include a middle control zone; The N chips include an end chip and multiple side chips, the end chip is located at the end of the middle control area in the second direction, the multiple side chips are symmetrically distributed on both sides of the middle control area in the second direction, and the side chips are located between the middle control area and the DC negative power area on the corresponding side.

3. The power module assembly according to claim 2, characterized in that: The end chip of the AC power zone is located at one end of the middle control zone away from the DC positive power zone, and the end chip of the DC positive power zone is located at one end of the middle control zone away from the AC power zone.

4. The power module assembly according to claim 3, characterized in that: The end chip of the AC power zone is electrically connected to the two arms of the DC negative power zone; And / or, the end chip of the DC positive power zone is electrically connected to the two arms of the AC power zone.

5. The power module assembly according to claim 2, characterized in that: There are a plurality of side chips located on the same side of the central control area, and the plurality of side chips are distributed at intervals along the second direction.

6. The power module assembly according to claim 5, characterized in that: At least two of the plurality of side chips located on the same side of the middle control area of ​​the AC power area share a first side connection portion, and the first side connection portion is used to electrically connect to the DC negative power area on the corresponding side; And / or, at least two of the plurality of side chips located on the same side of the middle control zone of the DC positive power zone share a second side connection portion, and the second side connection portion is used to electrically connect to the AC power zone on the corresponding side.

7. The power module assembly according to claim 2, characterized in that: The middle control area is provided with a signal terminal.

8. The power module assembly according to any one of claims 1 to 7, characterized in that: The AC power zone is connected to an AC terminal at one end away from the DC positive power zone, the DC positive power zone is connected to a P terminal at one end away from the AC power zone, and each of the DC negative power zones is connected to an N terminal.

9. The power module assembly according to claim 8, characterized in that: The P terminal and the N terminal are both located at the same end of the chip module.

10. The power module assembly according to any one of claims 1 to 7, characterized in that: The distance between two adjacent chips is X, and X≥2.5 mm.

11. The power module assembly according to any one of claims 1 to 7, characterized in that: The chip module is also provided with an NTC placement area, the NTC placement area is used to connect the thermistor, and the NTC placement area is provided with a signal terminal.

12. The power module assembly according to any one of claims 1 to 7, characterized in that: Also included is a heat dissipation substrate, the heat dissipation substrate is connected to the bottom of the module body, and the heat dissipation substrate is formed with heat dissipation pin fins; It also includes a protective plate, which is covered on the top of the chip module.

13. The power module assembly according to any one of claims 1 to 7, characterized in that: There are a plurality of chip modules, and the plurality of chip modules are spaced apart and distributed along the first direction.

14. A vehicle, characterized in that: A power module assembly according to any one of claims 1 to 13 is provided.

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