Solar cell, photovoltaic module and tracing method

Abstract

The invention provides a solar cell which comprises a silicon substrate, a first area and a second area are distributed on the surface of the silicon substrate, the first area comprises a first doping layer, and the second area comprises a second doping layer; wherein the solar cell further comprises grouped patterned mark structures, and at least one patterned mark structure is a structure directly formed by the first doping layer or the second doping layer, or a structure completely or partially enclosed by the first doping layer or the second doping layer. According to the solar cell provided by the invention, traceability of the cell pieces can be carried out by using grouped graphical marking structures. The invention also provides a photovoltaic module and a tracing method of the solar cell.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic technology, and in particular to a solar cell, a photovoltaic module, and a tracing method. Background Art

[0002] Solar cells are becoming more and more widely used as a new energy alternative. Among them, photovoltaic solar cells use the principle of photovoltaics to generate carriers, and then use electrodes to lead out the carriers, so as to effectively utilize electrical energy. At present, the process of solar cells is complicated and requires multiple people to track for several days, which is labor-intensive and costly. It is difficult to troubleshoot abnormalities in mass-produced cells, and manual secondary testing is required to keep abnormal cells. There are problems such as small amount of manual samples, non-representativeness, easy confusion in the direction of investigation, and low efficiency of investigation.

[0003] Therefore, it is necessary to provide an improved solar cell, photovoltaic module, and solar cell tracing method to overcome or reduce at least part of the disadvantages existing in the above-mentioned prior art. Summary of the invention

[0004] In a first aspect of the present invention, a solar cell is provided, wherein the solar cell comprises a silicon substrate, a first region and a second region are distributed on a surface of the silicon substrate, the first region comprises a first doping layer, and the second region comprises a second doping layer;

[0005] The solar cell further includes a group of graphic mark structures, and at least one graphic mark structure is a structure directly formed by the first doping layer or the second doping layer, or a structure completely or partially surrounded by the first doping layer or the second doping layer.

[0006] The solar cell of the present invention is configured to also include a group of graphical marking structures, and at least one of the graphical marking structures is a structure directly formed by the first doping layer or the second doping layer, or a structure completely or partially enclosed by the first doping layer or the second doping layer, so that the group of graphical marking structures can be used to trace the battery cells, especially to trace the machines of abnormal battery cells. Specifically, the machines before the first graphical processing and the machines between the first graphical processing and the second graphical processing can be traced, thereby reducing manpower consumption, reducing costs, facilitating the detection of abnormal battery cells, and preventing confusion in the detection direction, thereby achieving high detection efficiency.

[0007] Optionally, the group of graphical marking structures includes: one or more first graphical marking structures and one or more second graphical marking structures, wherein the first graphical marking structures and the second graphical marking structures are different.

[0008] Optionally, at least one of the shape, size, color, arrangement, and height between the first graphic mark structure and the second graphic mark structure and a reference plane of the silicon substrate is different.

[0009] Optionally, the first graphical marking structure is in a square shape, an irregular shape, a straight line shape, a curved line shape, an elliptical shape, or a polygonal shape;

[0010] The second graphical marking structure is in a square shape, an irregular shape, a straight line shape, a curved line shape, an elliptical shape, or a polygonal shape.

[0011] Optionally, the first patterned marking structure is a first doped layer block structure directly formed by the first doped layer and at least partially independent or completely independent;

[0012] Furthermore, the second patterned mark structure is a recessed structure completely or partially surrounded by the second doping layer.

[0013] Optionally, the first patterned mark structure and the second patterned mark structure have different heights relative to a reference plane of the silicon substrate.

[0014] Optionally, a height difference between a height H1 between the first patterned mark structure and a reference plane of the silicon substrate and a height H2 between the second patterned mark structure and the reference plane of the silicon substrate is greater than 10 nanometers and less than 2000 nanometers.

[0015] Optionally, the group of graphical marking structures is formed at two different positions among the following positions: the first area, the second area, the cell separation area, the cell edge area; or, respectively located at two different edge areas of the cell; or, respectively located at both sides of the cell.

[0016] Optionally, the solar cell has a plurality of busbar structures, which are spaced apart along the first direction and extend along the second direction; wherein the grouped graphic marking structure is formed between two busbar structures adjacent to two battery cell edges in the first direction of the battery.

[0017] Optionally, in the first direction, the distance between the edges of two battery cells of the battery is L, and the distance between at least one of the group of graphic marking structures and the adjacent battery cell edge is greater than

[0018]

[0019] In a second aspect of the present invention, a photovoltaic module is provided, wherein the photovoltaic module comprises the aforementioned solar cell and an encapsulation layer, wherein the encapsulation layer covers a surface of the solar cell.

[0020] The photovoltaic module of the second aspect of the present invention has similar technical effects as the solar cell of the first aspect.

[0021] In a third aspect of the present invention, a solar cell tracing method is provided, wherein the tracing method comprises the following steps:

[0022] Forming a first graphical marking structure for marking a machine of a process before forming the first graphical marking structure;

[0023] Forming a second graphical marking structure for marking a machine for a process between forming the first graphical marking structure and forming the second graphical marking structure;

[0024] Acquire information of the first graphical marking structure and the second graphical marking structure;

[0025] Wherein, at least one graphic mark structure is a structure directly formed by the first doping layer or the second doping layer, or a structure completely or partially surrounded by the first doping layer or the second doping layer.

[0026] The solar cell traceability method of the present invention can be used to mark the machine of the process before forming the first graphical marking structure by forming a first graphical marking structure, and can be used to mark the machine of the process between forming the first graphical marking structure and forming the second graphical marking structure by forming a second graphical marking structure. Then, by obtaining the information of the first graphical marking structure and the second graphical marking structure, it can correspond to the machine information, thereby realizing the traceability of solar cells, especially the traceability of abnormal solar cells.

[0027] Optionally, the traceability method further includes the steps of: determining a matching relationship between the test performance data and the machine based on the obtained information of the first graphical marking structure and the second graphical marking structure, the test performance data of the solar cell obtained by using the performance testing system, and a preset mapping relationship; wherein the mapping relationship specifies information of the first graphical marking structure and the second graphical marking structure corresponding to the machine.

[0028] Optionally, after the step of acquiring information of the first graphical marking structure and the second graphical marking structure, the tracing method of the present invention may further include the steps of:

[0029] Transmitting the obtained information of the first graphical marking structure and the second graphical marking structure to a performance testing system, the performance testing system being used to output a plurality of test performance data;

[0030] Compare the multiple test performance data with the pre-stored standard performance data to determine whether there is any test performance data that does not match the standard performance data;

[0031] When there is test performance data that does not match the standard performance data, output information of the first graphical marking structure and the second graphical marking structure corresponding to the test performance data that does not match the standard performance data;

[0032] The machine corresponding to the information of the first graphical marking structure and the second graphical marking structure is determined according to a preset mapping relationship, wherein the mapping relationship specifies the information of the first graphical marking structure and the second graphical marking structure corresponding to the machine.

[0033] Based on the following detailed description of specific embodiments of the present invention in conjunction with the accompanying drawings, those skilled in the art will become more aware of the above and other objects, advantages and features of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Features, advantages, and exemplary embodiments of the present invention will be described below with reference to the accompanying drawings, in which like reference numerals refer to like elements, and in which:

[0035] Figure 1 is a schematic diagram of a solar cell according to an embodiment of the present invention.

[0036] Figure 2 is another schematic diagram of a solar cell according to an embodiment of the present invention.

[0037] Figure 3 FIG. 1 is a partial schematic diagram of a solar cell according to an embodiment of the present invention.

[0038] Figure 4 Schematic diagram of a graphic marking structure of a solar cell according to an embodiment of the present invention.

[0039] Figure 5 is another partial schematic diagram of a solar cell according to an embodiment of the present invention.

[0040] Figure 6 is a schematic diagram of a bifacial battery according to an embodiment of the present invention.

[0041] Figure 7 is a schematic diagram of a bifacial battery according to another embodiment of the present invention.

[0042] Figure 8 is a schematic diagram of a back-contact cell according to one embodiment of the present invention.

[0043] Fig. 9 is a flow chart of a solar cell tracing method according to an embodiment of the present invention. DETAILED DESCRIPTION

[0044] The exemplary embodiments of the present invention are described in detail below with reference to the accompanying drawings. The description of the exemplary embodiments is merely exemplary and is by no means a limitation of the present invention and its application or usage. Moreover, the sizes and proportions of the components in the drawings are merely schematic and do not strictly correspond to actual products.

[0045] The embodiment of the present invention provides a solar cell 100, such as Figure 1 and Figure 6 As shown, the solar cell 100 includes a silicon substrate 101, and a first region 102 and a second region 103 are distributed on the surface of the silicon substrate 101, the first region 102 includes a first doping layer 120, and the second region 103 includes a second doping layer 130; wherein, the solar cell 100 also includes a group of graphic marking structures 200, and at least one graphic marking structure is a structure directly formed by the first doping layer 120 or the second doping layer 130, or a structure completely or partially enclosed by the first doping layer 120 or the second doping layer 130.

[0046] The solar cell 100 of the embodiment of the present invention is configured to further include a group of graphical marking structures 200, and at least one of the graphical marking structures is a structure directly formed by the first doping layer 120 or the second doping layer 130, or a structure completely or partially enclosed by the first doping layer 120 or the second doping layer 130, so that the group of graphical marking structures 200 can be used to trace the cell, especially to trace the machine related to the abnormal cell. In the prior art, there is a method of tracing abnormal laser machines and abnormal silicon wafers according to the laser spot size and laser mark in the silicon wafer through a microscope. This method requires manual tracking, has the disadvantages of large manpower consumption, high cost, and difficulty in troubleshooting abnormal cells. In the prior art, there is also a method of marking using a grid line structure, but since the grid line printing is set at the last process of the entire production process of the cell, it is impossible to trace the machine before the grid line in sections, for example, it is impossible to trace the machine before the first graphic process and the machine between the first graphic process and the second graphic process. In comparison, in the embodiment of the present invention, by setting at least one graphic marking structure to a structure directly formed by the first doping layer 120 or the second doping layer 130, or a structure completely or partially enclosed by the first doping layer 120 or the second doping layer 130, it is possible to trace the machine before the first graphic processing and the machine between the first graphic processing and the second graphic processing, thereby eliminating the need for manual tracking, achieving the advantages of reduced manpower consumption, low cost, easy troubleshooting of abnormal battery cells, no confusion in the direction of troubleshooting, and high troubleshooting efficiency.

[0047] The present invention further provides a photovoltaic module (not shown in the figure), wherein the photovoltaic module comprises the aforementioned solar cell 100 and an encapsulation layer (not shown in the figure), and the encapsulation layer covers the surface of the solar cell 100. By improving the solar cell 100, the photovoltaic module including the solar cell 100 has a similar technical effect. The encapsulation layer can cover the solar cell 100 in any manner that can be implemented in the prior art, and is not limited here.

[0048] The present invention also provides a tracing method for a solar cell 100, wherein: Fig. 9 As shown, the traceability method includes the following steps:

[0049] S102: forming a first graphical marking structure 201, which is used to mark a machine of a process before forming the first graphical marking structure;

[0050] S104: forming a second graphical marking structure 202, which is used to mark a machine in a process between forming the first graphical marking structure and forming the second graphical marking structure;

[0051] S106: Acquire information of the first graphical marking structure 201 and the second graphical marking structure 202;

[0052] The at least one patterned marking structure is a structure directly formed by the first doping layer 120 or the second doping layer 130 , or a structure completely or partially surrounded by the first doping layer 120 or the second doping layer 130 .

[0053] The traceability method of the solar cell 100 of the embodiment of the present invention can be used to mark the machine of the process before forming the first graphical marking structure by forming the first graphical marking structure 201, and can be used to mark the machine of the process between forming the first graphical marking structure 201 and forming the second graphical marking structure 202 by forming the second graphical marking structure 202. Then, by obtaining the information of the first graphical marking structure 201 and the second graphical marking structure 202, it can correspond to the machine information, thereby realizing the traceability of the solar cell 100, especially the traceability of abnormal cells. The traceability method only needs to fine-tune the production process of the existing solar cell 100 to achieve it, and does not need to be significantly changed, so almost no additional cost is generated. At the same time, it makes it easy to check the abnormal cells, and there is no confusion in the direction of the check, and the check efficiency is high.

[0054] The solar cell 100 and the tracing method of the solar cell 100 of the present invention are described in detail below with reference to the accompanying drawings and embodiments.

[0055] The solar cell 100 of the embodiment of the present invention can be any cell 100 that can convert solar light energy into electrical energy. The solar cell 100 is also called a cell.

[0056] The solar cell 100 of the embodiment of the present invention may include a group of patterned mark structures 200, and at least one of the patterned mark structures is a structure directly formed by the first doping layer 120 or the second doping layer 130, or a structure completely or partially surrounded by the first doping layer 120 or the second doping layer 130. The group of patterned mark structures 200 may be one group or multiple groups, and usually only one group is required. The group of patterned mark structures 200 usually includes two or more patterned mark structures 200. Among the group of patterned mark structures 200, at least one patterned mark structure may be a structure directly formed by the first doping layer 120, a structure directly formed by the second doping layer 130, a structure completely surrounded by the first doping layer 120, a structure partially surrounded by the first doping layer 120, a structure completely surrounded by the second doping layer 130, or a structure partially surrounded by the second doping layer 130. In this article, the patterned marking structure is a structure "completely surrounded by a doping layer", which means that the entire circumferential area of ​​the patterned marking structure is the doping layer; the patterned marking structure is a structure "partially surrounded by a doping layer", which means that only a part of the circumferential area of ​​the patterned marking structure is the doping layer, such as Figure 1 As shown in the mark 202.

[0057] In terms of the location of the positive electrode and the negative electrode, the solar cell 100 of the embodiment of the present invention can be a double-sided contact solar cell, that is, one of the positive electrode and the negative electrode of the solar cell is arranged on the light-facing side of the solar cell, and the other is arranged on the backlight side of the solar cell. Alternatively, the solar cell 100 of the embodiment of the present invention can also be a back contact cell, that is, both the positive electrode and the negative electrode of the solar cell are arranged on the backlight side of the solar cell. Back contact (BC) cell technology is considered to be the future development direction of crystalline silicon solar cell technology. At present, the types of BC cells mainly include IBC, TBC, HPBC, HBC, etc., which move the PN junction and metal contact to the back of the cell so that there is no electrode blocking the front, and the cell absorbs sunlight over a larger area, thereby improving the conversion efficiency and generating more electricity.

[0058] In the case where the solar cell 100 of the embodiment of the present application is a bifacial cell, in some embodiments, such as Figure 6As shown, the bifacial cell may include a silicon substrate 101; a first region 102 is distributed on the light-facing side of the silicon substrate 101, and a second region 103 is distributed on the backlight side of the silicon substrate 101. The first region 102 includes a first doping layer 120, and the second region 103 includes a second doping layer 130. At least one of the first doping layer 120 and the second doping layer 130 is locally distributed on the surface of the silicon substrate 101. The locally distributed doping layer is usually set as an interval strip structure or a locally connected strip structure. Figure 6 In the embodiment, the first doping layer 120 is locally distributed on the surface of the silicon substrate 101. The first doping layer 120 and the second doping layer 130 are generally of opposite conductivity types; and the bifacial cell further includes a group of patterned marking structures 200, and at least one of the patterned marking structures is a structure directly formed by the first doping layer 120 or the second doping layer 130, or a structure completely or partially surrounded by the first doping layer 120 or the second doping layer 130.

[0059] In the case where the solar cell 100 of the embodiment of the present application is a bifacial cell, in other embodiments, such as Figure 7 As shown, the bifacial cell may include a silicon substrate 101; a substantially entire first region 102 is distributed on the surface of the light-facing side of the silicon substrate 101, and the first region 102 includes a first doping layer 120; a substantially entire second region 103 is distributed on the surface of the backlight side of the silicon substrate 101, and the second region 103 includes a second doping layer 130, wherein the conductivity types of the first doping layer 120 and the second doping layer 130 are generally opposite; and wherein the bifacial cell also includes a group of graphic marking structures 200, and at least one graphic marking structure is a structure directly formed by the first doping layer 120 or the second doping layer 130, or a structure completely or partially enclosed by the first doping layer 120 or the second doping layer 130.

[0060] In the case where the solar cell 100 of the embodiment of the present application is a back contact cell, Figure 8 As shown, the back-contact battery may include: a silicon substrate 101, a first region 102 and a second region 103 are alternately distributed on the surface of the backlight side of the silicon substrate 101, the first region 102 includes a first doping layer 120, and the second region 103 includes a second doping layer 130, wherein the first doping layer 120 and the second doping layer 130 have opposite conductivity types; and wherein the bifacial battery also includes a group of graphic marking structures 200, and at least one graphic marking structure is a structure directly formed by the first doping layer 120 or the second doping layer 130, or a structure completely or partially enclosed by the first doping layer 120 or the second doping layer 130.

[0061] The first doping layer 120 and the second doping layer 130, the material of the first doping layer 120 and / or the second doping layer 130 may include semiconductor materials such as silicon, silicon germanium or germanium. In terms of the arrangement of the material, the crystal phase of the first doping layer 120 and / or the second doping layer 130 may be amorphous, microcrystalline, nanocrystalline, single crystal or polycrystalline, etc. In terms of the conductivity type, the conductivity type of the first doping layer 120 may be N-type, and the conductivity type of the second doping layer 130 may be P-type; or the conductivity type of the first doping layer 120 may be P-type, and the conductivity type of the second doping layer 130 may be N-type. As for the thickness of the first doping layer 120 and the second doping layer 130, it can be set according to actual needs and is not specifically limited here.

[0062] The structure of the group of patterned marking structures 200 of the solar cell 100 according to the embodiment of the present invention is described in detail below.

[0063] In some embodiments, Figure 1 As shown, the group of patterned mark structures 200 may include: one or more first patterned mark structures 201 and one or more second patterned mark structures 202, wherein the first patterned mark structures 201 and the second patterned mark structures 202 are different. That is, the group of patterned mark structures 200 may include: one or more first patterned mark structures 201 and one or more second patterned mark structures 202, wherein the first patterned mark structures 201 and the second patterned mark structures 202 are different, and at least one of the first patterned mark structures 201 and the second patterned mark structures 202 is a structure directly formed by the first doping layer 120 or the second doping layer 130, or a structure completely or partially surrounded by the first doping layer 120 or the second doping layer 130.

[0064] The first graphical marking structure 201 and the second graphical marking structure 202 only need to be different, for example, at least one of the shape, size, color, arrangement, and height between the first graphical marking structure 201 and the second graphical marking structure 202 and the reference plane of the silicon substrate 101 is different. In other words, the shape, size, color, arrangement, and height between the first graphical marking structure 201 and the second graphical marking structure 202, or any combination thereof, are different. For example, the first graphical marking structure 201 and the second graphical marking structure 202 have different shapes, sizes, colors, arrangements, heights between the reference plane of the silicon substrate 101, shapes and sizes, shapes and arrangements, shapes and heights between the reference plane of the silicon substrate 101, or arrangements and heights between the reference plane of the silicon substrate 101, etc.

[0065] In some embodiments, the first graphical marking structure 201 and the second graphical marking structure 202 are different, wherein the first graphical marking structure 201 is a square shape, an irregular shape, a straight line shape, a curved shape, an elliptical shape, or a polygonal shape; the second graphical marking structure 202 is a square shape, an irregular shape, a straight line shape, a curved shape, an elliptical shape, or a polygonal shape. Figure 1 In the figure, the first graphical marking structure 201 is in a square shape, and the second graphical marking structure 202 is also in a square shape, but the sizes and configurations of the two are different. Figure 3 In FIG. 2 , only the first graphical marking structure 201 is shown, and the first graphical marking structure 201 is in a polygonal shape. Figure 4 2 shows several exemplary shapes of the first graphical marking structure 201 and the second graphical marking structure 202, a) is a square shape, b) is a special shape, c) is a straight line shape, d) and e) are different curve shapes, f) is an ellipse shape, and g) is a polygonal shape. It can be understood that Figure 4 It is merely exemplary. For example, c) the straight line shape may also be a substantially straight line shape composed of broken line segments.

[0066] In some embodiments, the first patterned marking structure 201 and the second patterned marking structure 202 are different, wherein the first patterned marking structure 201 is an at least partially independent or completely independent first doped layer block structure directly formed by the first doped layer 120; and the second patterned marking structure 202 is a recessed structure completely or partially surrounded by the second doped layer 130. Herein, "at least partially independent first doped layer block structure" means that there is a connection between the first doped layer block structure and the main part of the first doped layer 120, rather than being completely independent of the main part of the first doped layer 120, for example Figure 6 and Figure 8 As shown in; and "completely independent first doping layer block structure" means that there is no connection between the first doping layer block structure and the main part of the first doping layer 120, which is completely independent of the main part of the first doping layer 120, for example Figure 1 It is understood that the second patterned mark structure 202 may be an at least partially independent or completely independent second doping layer block structure directly formed by the second doping layer 130 ; and the first patterned mark structure 201 may be a recessed structure completely or partially surrounded by the first doping layer 120 .

[0067] In some embodiments, the first patterned mark structure 201 and the second patterned mark structure 202 are at different heights from a reference plane of the silicon substrate 101 .

[0068] Herein, "the reference plane of the silicon substrate" refers to the surface of the silicon substrate 101 that is closest to the graphic mark structure 200. The reference plane of the silicon substrate 101 is adjusted accordingly according to the positions of the first graphic mark structure 201 and the second graphic mark structure 202 relative to the silicon substrate 101. When the first graphic mark structure 201 and the second graphic mark structure 202 are located on the same side surface of the silicon substrate, the reference planes of the silicon substrate corresponding to the first graphic mark structure 201 and the second graphic mark structure 202 are the same, and both correspond to the side surface of the silicon substrate on which the graphic mark structure is disposed; when the first graphic mark structure 201 and the second graphic mark structure 202 are located on both side surfaces of the silicon substrate, the reference planes of the silicon substrate corresponding to the first graphic mark structure 201 and the second graphic mark structure 202 are different, and correspond to the two side surfaces of the silicon substrate respectively.

[0069] Herein, the height between the graphic mark structure 200 and the reference plane of the silicon substrate 101 can be defined in the following two cases: when the graphic mark structure 200 is a structure that is at least partially independent or completely independent, the height between the graphic mark structure 200 and the reference plane of the silicon substrate 101 is the distance between the surface of the battery structure corresponding to the part of the graphic mark structure 200 that is independent of the doping layer body and away from the silicon substrate 101 and the reference plane of the silicon substrate 101 in the thickness direction of the silicon substrate 101; when the graphic mark structure 200 is a recessed structure that is completely or partially surrounded by the doping layer, the height between the graphic mark structure 200 and the reference plane of the silicon substrate 101 is the distance between the surface of the battery structure corresponding to the recessed structure part of the graphic mark structure 200 and away from the silicon substrate 101 and the reference plane of the silicon substrate 101 in the thickness direction of the silicon substrate 101.

[0070] For example, when the solar cell 100 is a bifacial cell, the first doping layer 120 is on the light-facing side, and the second doping layer 130 is on the backlight side, that is, the first graphic mark structure 201 is on the light-facing side, and the second graphic mark structure 202 is on the backlight side. The bifacial cell generally includes a first doping layer 120, a first dielectric layer 161, a silicon substrate 101, a second dielectric layer 162, and a second doping layer 130 stacked in sequence from top to bottom. At this time, for the first graphic mark structure 201, the reference plane of the silicon substrate 101 is the upper surface of the silicon substrate 101; and for the second graphic mark structure 202, the reference plane of the silicon substrate 101 is the lower surface of the silicon substrate 101.

[0071] For another example, when the solar cell 100 is a back-contact cell, at this time, the first doping layer 120 and the second doping layer 130 are both on the backlight side, that is, the first graphic marking structure 201 and the second graphic marking structure 202 are both on the backlight side. The back-contact cell generally includes a silicon substrate 101, a dielectric layer 106, and a first doping layer 120 and a second doping layer 130 stacked in sequence from top to bottom. At this time, for the first graphic marking structure 201 and the second graphic marking structure 202, the reference plane of the silicon substrate 101 is the lower surface of the silicon substrate 101.

[0072] In addition, it can be understood that the solar cell 100 generally further includes a passivation anti-reflection layer (not shown in the figure), an electrode 108, etc. The materials and thickness of the dielectric layer, the passivation anti-reflection layer, etc. can be determined according to the actual application scenario, and are not specifically limited here. For example, the dielectric layer can be a tunneling dielectric layer, and the material of the tunneling dielectric layer can include materials such as silicon oxide, aluminum oxide, silicon carbide or titanium oxide. The electrode can be a metal electrode. When the solar cell 100 also includes other film layers such as a passivation anti-reflection layer, the height between the first graphic mark structure 201 and the second graphic mark structure 202 and the reference plane of the silicon substrate 101 should include the thickness of these film layer structures corresponding to the graphic mark along the thickness direction of the silicon substrate. In general, the battery structure corresponding to the graphic mark structure 200 is not provided with an electrode 108, especially a recessed graphic mark structure 200. If there is a special need, when the graphic mark structure 200 is a doping layer block structure that is at least partially independent or completely independent and directly formed by the doping layer, its corresponding battery structure may also include an electrode 108. However, the height of the electrode 108 is not included in the height between the first patterned mark structure 201 and the second patterned mark structure 202 and the reference plane of the silicon substrate 101 .

[0073] In some embodiments, the height difference between the height H1 between the first patterned mark structure 201 and the reference plane of the silicon substrate 101 and the height H2 between the second patterned mark structure 202 and the reference plane of the silicon substrate 101 is greater than 10 nanometers and less than 2000 nanometers. By setting the height difference between the height H1 between the first patterned mark structure 201 and the reference plane of the silicon substrate 101 and the height H2 between the second patterned mark structure 202 and the reference plane of the silicon substrate 101 to be greater than 10 nanometers and less than 2000 nanometers, on the one hand, the height difference between the first patterned mark structure 201 and the second patterned mark structure 202 is easier to identify when it is greater than 10 nanometers, and on the other hand, the height difference is less than 2000 nanometers, which can minimize the overall impact on the production process of the solar cell 100. The height difference between the height H1 between the first graphical marking structure 201 and the reference plane of the silicon substrate 101 and the height H2 between the second graphical marking structure 202 and the reference plane of the silicon substrate 101 can be, for example, 20 nanometers, 100 nanometers, 200 nanometers, 300 nanometers, 400 nanometers, 500 nanometers, 600 nanometers, 700 nanometers, 800 nanometers, 1200 nanometers, 1500 nanometers, 1600 nanometers, or 1900 nanometers.

[0074] Combine the following Figure 1 , Figures 6 to 8 , several examples of the first patterned marking structure 201 and the second patterned marking structure 202 of the solar cell 100 are described in detail.

[0075] Figure 1 In the figure, the first graphical marking structure 201 is a square shape, and the first graphical marking structure 201 is a completely independent first doping layer block structure directly formed by the first doping layer 120, while the second graphical marking structure 202 is a square shape, and the second graphical marking structure 202 is a recessed structure partially enclosed by the second doping layer 130.

[0076] Figure 6 In the embodiment, the first patterned mark structure 201 is in a square shape, and the first patterned mark structure 201 is a partially independent first doping layer block structure directly formed by the first doping layer 120, while the second patterned mark structure 202 is in a special shape, and the second patterned mark structure 202 is a recessed structure partially surrounded by the second doping layer 130. The height H1 between the first patterned mark structure 201 and the corresponding reference plane of the silicon substrate 101, that is, the upper surface of the silicon substrate 101, is different from the height H2 between the second patterned mark structure 202 and the corresponding reference plane of the silicon substrate 101, that is, the lower surface of the silicon substrate 101.

[0077] Figure 7In the embodiment, the first patterned mark structure 201 is in a square shape, and the first patterned mark structure 201 is a completely independent first doped layer block structure directly formed by the first doped layer 120, while the second patterned mark structure 202 is in a square shape, and the second patterned mark structure 202 is a completely independent second doped layer block structure directly formed by the second doped layer 130. The height H1 between the first patterned mark structure 201 and the corresponding reference plane of the silicon substrate 101, that is, the upper surface of the silicon substrate 101, is different from the height H2 between the second patterned mark structure 202 and the corresponding reference plane of the silicon substrate 101, that is, the lower surface of the silicon substrate 101.

[0078] Figure 8 In the embodiment, the first patterned mark structure 201 is in a square shape, and the first patterned mark structure 201 is a completely independent first doping layer block structure directly formed by the first doping layer 120, while the second patterned mark structure 202 is in a square shape, and the second patterned mark structure 202 is a partially independent second doping layer block structure directly formed by the second doping layer 130. The height H1 between the first patterned mark structure 201 and the corresponding reference plane of the silicon substrate 101, that is, the lower surface of the silicon substrate 101, is different from the height H2 between the second patterned mark structure 202 and the corresponding reference plane of the silicon substrate 101, that is, the lower surface of the silicon substrate 101.

[0079] The following is a detailed description of the arrangement positions of the group of patterned marking structures 200 of the solar cell 100 according to the embodiment of the present invention.

[0080] The grouped graphical marking structure 200 of the solar cell 100 of the embodiment of the present invention can be formed at two different positions among the following positions: the first area 102, the second area 103, the cell separation area 104, the cell edge area 105; or, respectively located at two different edge areas of the cell; or, respectively located at both sides of the cell.

[0081] The first region 102 is the region where the first doping layer 120 is located. The second region 103 is the region where the second doping layer 130 is located. The cell separation region 104 is the region between two adjacent electrode units, and the cell is usually cut / separated into cell units in this region. The cell edge region 105 can be two edge regions in the first direction of the cell, or two edge regions in the second direction of the cell. Herein, "first direction" and "second direction" are two different directions, and usually the two are perpendicular. For example, when the cell is generally rectangular, the first direction can be the left-right direction of the rectangle, and the second direction can be the up-down direction of the rectangle, such as Figure 2 The two sides of the cell are the light-facing side and the backlight side of the cell.

[0082] Take the example of a group of graphic mark structures 200 having a first graphic mark structure 201 and a second graphic mark structure 202. For example, the first graphic mark structure 201 can be formed in the first area 102, and the second graphic mark structure 202 can be formed in the second area 103; for another example, the first graphic mark structure 201 can be formed in the cell separation area 104, and the second graphic mark structure 202 can be formed in the second area 103, or a certain edge area of ​​the cell; for another example, the first graphic mark structure 201 can be formed in an edge area of ​​the cell in the second direction, and the second graphic mark structure 202 can be formed in another edge area of ​​the cell along the second direction; for another example, the first graphic mark structure 201 can be formed on the light-facing side of the cell, and the second graphic mark structure 202 can be formed on the backlight side of the cell.

[0083] As described above, in terms of quantity, the number of the first graphical marking structures 201 can be one or more, and the number of the second graphical marking structures 202 can also be one or more. The first graphical marking structure 201 is taken as an example to illustrate the position distribution when the number of the first graphical marking structures 201 is one or more. The multiple first graphical marking structures 201 can be located at different positions in the same area and / or in different areas.

[0084] For example, the plurality of first patterned marking structures 201 are all formed in the first region 102 and are respectively located at different positions of the first region 102, or may be all formed in the separation region 104 and are respectively located at different positions of the separation region 104, or may be all formed in the edge region and are respectively located at different positions of the edge region. For example, the plurality of first patterned marking structures 201 are all formed in the first region 102 and are respectively located at the ends of different strip doping layers 120 in the first region 102, such as Figure 5 For example, the plurality of first patterned marking structures 201 are all formed in the edge region and are respectively located in different edge regions of the battery cell.

[0085] For another example, a plurality of first graphical mark structures 201 are formed at two or more regions in the first region 102, the separation region 104, or the edge region. For example, when there are two first graphical mark structures 201, one first graphical mark structure 201 is located in the first region 102, and the other first graphical mark structure 201 is located in the edge region. For example, when there are three first graphical mark structures 201, the first first graphical mark structure 201 is located in the first region 102, the second first graphical mark structure 201 is located in the edge region, and the third first graphical mark structure 201 is located in the separation region 104.

[0086] For another example, when there are three first graphical marking structures 201 , the first first graphical marking structure 201 and the second first graphical marking structure 201 are both located in the first area 102 but at different positions of the first area 102 , and the third first graphical marking structure 201 is located in the separation area 104 .

[0087] In terms of the specific electrode structure of the positive electrode and the negative electrode, the solar cell 100 of the embodiment of the present invention may be a "busbar-free solar cell". In this case, the electrode structure in the solar cell only includes a plurality of collector electrodes 500, which may also be referred to as fine grid lines. The plurality of collector electrodes 500 may extend along a first direction and be spaced apart along a second direction. Alternatively, the solar cell 100 of the embodiment of the present invention may also be a "busbar-equipped solar cell". In this case, the solar cell includes a plurality of collector electrodes 500 and a plurality of bus structures 400, which may also be referred to as bus electrodes. The bus structures 400 are spaced apart along a first direction and extend along a second direction, and are electrically coupled to collector electrodes 500 of the same conductivity type as themselves. The bus structure 400 may be a structure that extends over the entire cell sheet, or a structure that extends over only a portion of the cell sheet.

[0088] In the case where the solar cell 100 is a busbar-free solar cell, assuming that the distance between the edges of two cell sheets of the cell in the first direction is L, then the distance between at least one of the group of patterned marking structures 200 and the adjacent cell sheet edge along the first direction is greater than The distance between at least one of the group of patterned marking structures 200 and the adjacent edge of the cell may be, for example, by Figure 1 and Figure 2 For example, in the first direction, that is, in the left-right direction, the distance between the two battery cell edges of the battery, that is, the left battery cell edge and the right battery cell edge of the battery, is L. At this time, the distance between the first graphic mark structure 201 and the battery cell edge adjacent to the first graphic mark structure 201, that is, the left battery cell edge of the battery, is greater than And the distance between the second graphical marking structure 202 and the edge of the battery cell adjacent to the second graphical marking structure 202, that is, the right battery cell edge of the battery, is greater than

[0089] In the case where the solar cell 100 is a main grid solar cell, the group of graphic mark structures 200 is formed between two busbar structures 400 adjacent to two cell edges in the first direction of the cell. In other words, the group of graphic mark structures 200 is not disposed adjacent to the cell edge. Figure 2For example, the group of patterned marking structures 200 may be formed between the first left bus structure 400 near the left cell edge of the battery and the first right bus structure 400 near the right cell edge of the battery.

[0090] The tracing method of the solar cell 100 according to the embodiment of the present invention is described in detail below.

[0091] As described above, the tracing method of the solar cell 100 may include the following steps:

[0092] S102: forming a first graphical marking structure 201, which is used to mark a machine of a process before forming the first graphical marking structure;

[0093] S104: forming a second graphical marking structure 202, which is used to mark a machine in a process between forming the first graphical marking structure and forming the second graphical marking structure;

[0094] S106: Acquire information of the first graphical marking structure 201 and the second graphical marking structure 202;

[0095] The at least one patterned marking structure is a structure directly formed by the first doping layer 120 or the second doping layer 130 , or a structure completely or partially surrounded by the first doping layer 120 or the second doping layer 130 .

[0096] The traceability method of the solar cell 100 of the embodiment of the present invention can be used to mark the machine of the process before forming the first graphical marking structure by forming the first graphical marking structure 201, and can be used to mark the machine of the process between forming the first graphical marking structure 201 and forming the second graphical marking structure 202 by forming the second graphical marking structure 202. Then, by obtaining the information of the first graphical marking structure 201 and the second graphical marking structure 202, it can correspond to the machine information, thereby realizing the traceability of the solar cell 100, especially the traceability of abnormal solar cells.

[0097] It can be understood that the traceability method of the solar cell 100 can also include forming a third graphical marking structure for marking the machine of the process between forming the second graphical marking structure and forming the third graphical marking structure; forming a fourth graphical marking structure for marking the machine of the process between forming the third graphical marking structure and forming the fourth graphical marking structure; ...; forming an nth graphical marking structure for marking the machine of the process between forming the n-1th graphical marking structure and forming the nth graphical marking structure. That is, step S102 and step S104 can be repeated several times as needed to mark different processes and machines between different processes.

[0098] For step S102 and step S104, the formation of the patterned marking structure can be achieved by patterning the doping layer, for example, the first patterning is performed to form the first patterned marking structure 201, and the second patterning is performed to form the second patterned marking structure 202. The method for achieving patterning can be any method that can achieve patterning in the prior art, such as laser treatment or local acid treatment of the formation area of ​​the marking structure, or local deposition of the doping layer to obtain the doping layer with the marking structure, etc., which is not limited here.

[0099] For step S106, the information of the first graphical marking structure 201 and the second graphical marking structure 202 can be obtained by any method that can be used for marking and identification in the prior art, such as using an optical automatic detection system for image acquisition and identification, which is not limited here. The information of the first graphical marking structure 201 and the second graphical marking structure 202 may include the shape, size, color, setting method, height between the first graphical marking structure 201 and the second graphical marking structure 202 and the reference plane of the silicon substrate 101, etc.

[0100] The tracing method of the solar cell 100 according to the embodiment of the present invention may further include the following steps:

[0101] S108: Based on the information of the first graphical marking structure 201 and the second graphical marking structure 202 obtained, the test performance data of the solar cell obtained by the performance testing system, and the preset mapping relationship, determine the matching relationship between the test performance data and the machine; wherein the mapping relationship specifies the information of the first graphical marking structure 201 and the second graphical marking structure 202 corresponding to the machine.

[0102] The performance test system may be an IV test system, an EL test system, a hot spot test system, etc. The performance test may be performed using one performance test system, or may be performed using multiple performance test systems respectively.

[0103] In step S108, obtaining the test performance data by using the performance test system may be performed after step S106, or may be performed independently of step S106.

[0104] When the step of obtaining the test performance data by using the performance test system is performed after step S106, step S108 may include the following steps:

[0105] Transmitting the obtained information of the first graphic mark structure 201 and the second graphic mark structure 202 to a performance test system, the performance test system being used to output test performance data of the solar cell 100;

[0106] Based on the obtained information of the first graphical marking structure 201 and the second graphical marking structure 202 , the obtained test performance data, and the preset mapping relationship, the matching relationship between the test performance data and the machine is determined.

[0107] When the step of obtaining the test performance data by using the performance test system is performed independently of step S106, step S108 may include the following steps:

[0108] Use the performance test system to obtain test performance data;

[0109] Transmitting the obtained information of the first graphical marking structure 201 and the second graphical marking structure 202, and the obtained test performance data to a data collection system;

[0110] Based on the information of the first graphical marking structure 201 and the second graphical marking structure 202, the obtained test performance data, and the preset mapping relationship, determine the matching relationship between the test performance data and the machine;

[0111] The use of the performance testing system to obtain the test performance data may be performed before, during or after step S106.

[0112] In step S108, "based on the information of the first graphical marking structure 201 and the second graphical marking structure 202 obtained, the obtained test performance data, and the preset mapping relationship, determine the matching relationship between the test performance data and the machine" can be first matching the information of the graphical marking structure with the machine information, and then matching the test performance data with the machine; or it can be first matching the information of the graphical marking structure with the test performance data, and then matching the information of the graphical marking structure with the machine information.

[0113] In some embodiments, in step S108, the step of “determining the matching relationship between the test performance data and the machine based on the obtained information of the first graphical marking structure 201 and the second graphical marking structure 202, the obtained test performance data, and the preset mapping relationship” includes the following steps:

[0114] Determine the plurality of machines corresponding to the information of the plurality of first graphical marking structures 201 and the second graphical marking structures 202 obtained according to a preset mapping relationship;

[0115] Matching the obtained multiple test performance data with multiple machine information;

[0116] Output multiple machine information corresponding to multiple test performance data respectively, or only output abnormal machine information corresponding to abnormal test performance data.

[0117] In some other embodiments, in step S108, the step of “determining the matching relationship between the test performance data and the machine based on the obtained information of the first graphical marking structure 201 and the second graphical marking structure 202, the obtained test performance data, and the preset mapping relationship” includes the following steps:

[0118] Matching the plurality of test performance data with the obtained information of the plurality of first graphical marking structures 201 and the second graphical marking structures 202;

[0119] Outputting information of a plurality of first graphical marking structures 201 and a second graphical marking structure 202 corresponding to a plurality of test performance data respectively, or outputting information of only an abnormal first graphical marking structure 201 and a second graphical marking structure 202 corresponding to an abnormal test performance data;

[0120] The machine corresponding to the information of the output first graphical marking structure 201 and the second graphical marking structure 202 is determined according to a preset mapping relationship, thereby determining the matching relationship between the test performance data and the machine.

[0121] The tracing method of the solar cell 100 according to the embodiment of the present invention is described in detail below with reference to several examples.

[0122] In one example, the tracing method of the solar cell 100 according to the embodiment of the present invention may include the following steps:

[0123] Performing patterning of the first doping layer to form a first patterned marking structure 201 for marking a machine for a process before patterning of the first doping layer;

[0124] Performing second doping layer patterning to form a second patterning marking structure 202 for marking a process between the first doping layer patterning and the second doping layer patterning;

[0125] Acquire information of the first graphical marking structure 201 and the second graphical marking structure 202;

[0126] Transmitting the obtained information of the first graphical marking structure 201 and the second graphical marking structure 202 to a performance testing system, the performance testing system being used to output test performance data;

[0127] Compare the test performance data with the pre-stored standard performance data to determine whether there is any test performance data that does not match the standard performance data;

[0128] When there is test performance data that does not match the standard performance data, output information of the first graphical marking structure 201 and the second graphical marking structure 202 corresponding to the test performance data that does not match the standard performance data;

[0129] The machine corresponding to the information of the first graphical marking structure 201 and the second graphical marking structure 202 is determined according to a preset mapping relationship, wherein the mapping relationship specifies the information of the first graphical marking structure 201 and the second graphical marking structure 202 corresponding to the machine.

[0130] In this example, the obtained test performance data are first compared with the pre-stored standard performance data to determine whether there is any test performance data that does not match the standard performance data. When there is test performance data that does not match the standard performance data, it indicates that an abnormal battery cell exists. At this time, the information of the first graphical marking structure 201 and the second graphical marking structure 202 of the abnormal battery cell is then obtained, thereby completing the traceability of the machine.

[0131] The preset mapping relationship specifies information of the first graphical marking structure 201 and the second graphical marking structure 202 corresponding to different machines. Since the tracing method of this embodiment only needs to trace the machine of the abnormal battery cell, the tracing method of this embodiment is more efficient.

[0132] As mentioned above, the performance test system can be one or more of an IV test system, an EL test system, a hot spot test system, etc. Accordingly, the pre-stored standard performance data can correspond to the selection of the IV test system, the EL test system, and the hot spot test system, that is, one or more standard performance data are pre-stored.

[0133] For example, assuming that three battery cells are produced, the machines used in the process before the first doping layer is patterned include machine 1-1, machine 1-2, machine 1-3, and machine 1-4; the machines used in the process between the first doping layer patterning and the second doping layer patterning include machine 2-1, machine 2-2, machine 2-3, and machine 2-4; in the preset mapping relationship, machine 1-1 corresponds to the patterned marking structure 1-1-0, machine 1-2 corresponds to the patterned marking structure 1-2-0, machine 1-3 corresponds to the patterned marking structure 1-3-0, machine 1-4 corresponds to the patterned marking structure 1-4-0, machine 2-1 corresponds to the patterned marking structure 2-1-0, machine 2-2 corresponds to the patterned marking structure 2-2-0, machine 2-3 corresponds to the patterned marking structure 2-3-0, and machine 2-4 corresponds to the patterned marking structure 2-4-0.

[0134] Patterning the first doping layer of the three cells respectively to form a first patterned marking structure 201;

[0135] Performing patterning of the second doping layer on the three cells respectively to form a second patterned marking structure 202;

[0136] Obtain information of the first graphical marking structure 201 and the second graphical marking structure 202 to obtain three groups of graphical marking structures, namely 1-1-0+2-1-0, 1-2-0+2-2-0, and 1-3-0+2-4-0;

[0137] The obtained three-group graphical marking structure is transmitted to an IV test system, and the IV test system outputs three IV data, namely, first IV data, second IV data, and third IV data;

[0138] Compare the first IV data, the second IV data, and the third IV data with the pre-stored standard IV data to determine whether there is test IV data that does not match the standard IV data;

[0139] When there is no test IV data that does not match the standard IV data, it means that the three cells are in normal state and the machine traceability is not performed;

[0140] When there is test IV data that does not match the standard IV data, for example, when it is determined that the first IV data does not match the standard IV data, information of the first graphical marking structure 201 and the second graphical marking structure 202 corresponding to the first IV data is output, that is, 1-1-0+2-1-0;

[0141] According to the preset mapping relationship, the machines corresponding to 1-1-0+2-1-0 are determined to be machine 1-1 and machine 2-1, thereby realizing the tracing of abnormal machines.

[0142] In another example, the tracing method of the solar cell 100 according to the embodiment of the present invention may include the following steps:

[0143] Performing patterning of the first doping layer to form a first patterned marking structure 201 for marking a machine for a process before patterning of the first doping layer;

[0144] Performing second doping layer patterning to form a second patterning marking structure 202 for marking a process between the first doping layer patterning and the second doping layer patterning;

[0145] Acquire information of the first graphical marking structure 201 and the second graphical marking structure 202;

[0146] Transmitting the obtained information of the first graphical marking structure 201 and the second graphical marking structure 202 to a performance testing system respectively, the performance testing system being used to output a plurality of test performance data;

[0147] Outputting information of the first graphical marking structure 201 and the second graphical marking structure 202 corresponding to the plurality of test performance data respectively, and obtaining information of the plurality of first graphical marking structures 201 and the second graphical marking structures 202;

[0148] A plurality of machines corresponding to the information of the plurality of first graphical marking structures 201 and the second graphical marking structures 202 are determined according to a preset mapping relationship, wherein the mapping relationship specifies the information of the first graphical marking structures 201 and the second graphical marking structures 202 corresponding to the machines.

[0149] Furthermore, the tracing method may also include the steps of:

[0150] Determining whether there is any test performance data among the multiple test performance data that does not match the standard performance data;

[0151] When there is test performance data that does not match the standard performance data, the corresponding machine information is output.

[0152] In this example, the obtained multiple test performance data correspond to the information of the first graphical marking structure 201 and the second graphical marking structure 202, and thus determine the machine corresponding to each solar cell 100. Then, it is determined whether there is test performance data that does not match the standard performance data in the multiple test performance data according to the needs, and when there is test performance data that does not match the standard performance data, that is, when there is an abnormal cell, the information of the machine corresponding to the test performance data that does not match the standard performance data is output.

[0153] In yet another example, the tracing method of the solar cell 100 according to the embodiment of the present invention may include the following steps:

[0154] Performing patterning of the first doping layer to form a first patterned marking structure 201 for marking a machine for a process before patterning of the first doping layer;

[0155] Performing second doping layer patterning to form a second patterning marking structure 202 for marking a process between the first doping layer patterning and the second doping layer patterning;

[0156] Acquire information of the first graphical marking structure 201 and the second graphical marking structure 202;

[0157] Transmitting the obtained information of the first graphical marking structure 201 and the second graphical marking structure 202 to a data collection system respectively, the data collection system is used to collect the test performance data output by the performance test system and the information of the grouped graphical marking structure 200;

[0158] Matching the test performance data with the corresponding information of the first graphical marking structure 201 and the second graphical marking structure 202 respectively;

[0159] According to a preset mapping relationship, multiple machines corresponding to the information of multiple first graphical marking structures 201 and second graphical marking structures 202 are determined, wherein the mapping relationship specifies the information of the first graphical marking structure 201 and the second graphical marking structure 202 corresponding to the machine, and finally the matching relationship between the test performance data of the solar cell 100 and the machine is obtained.

[0160] In this example, obtaining the test performance data is roughly synchronous with obtaining the information of the first graphical marking structure 201 and the second graphical marking structure 202, and the information of the graphical marking structure is first matched with the test performance data, and then the information of the graphical marking structure is matched with the machine information.

[0161] In another example, the tracing method of the solar cell 100 according to the embodiment of the present invention may include the following steps:

[0162] Performing patterning of the first doping layer to form a first patterned marking structure 201 for marking a machine for a process before patterning of the first doping layer;

[0163] Performing second doping layer patterning to form a second patterning marking structure 202 for marking a process between the first doping layer patterning and the second doping layer patterning;

[0164] Acquire information of the first graphical marking structure 201 and the second graphical marking structure 202;

[0165] Determine a plurality of machines corresponding to the information of the plurality of first graphical marking structures 201 and the second graphical marking structures 202 according to a preset mapping relationship, and obtain machine information, wherein the mapping relationship specifies the information of the first graphical marking structure 201 and the second graphical marking structure 202 corresponding to the machine;

[0166] Using the performance test system to obtain multiple test performance data;

[0167] Transmitting the obtained multiple machine information and the obtained multiple test performance data to the data collection system respectively;

[0168] Matching the obtained multiple test performance data with multiple machine information;

[0169] Determining whether there is any test performance data among the multiple test performance data that does not match the standard performance data;

[0170] When there is test performance data that does not match the standard performance data, the machine corresponding to the abnormal test performance data is output.

[0171] In this example, obtaining the test performance data is roughly synchronous with obtaining the information of the first graphical marking structure 201 and the second graphical marking structure 202, and the information of the graphical marking structure is first matched with the machine information, and then the test performance data is matched with the machine, and only abnormal machines are output.

[0172] In the description of this application, the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0173] In the description of the present application, the description with reference to the terms "one embodiment", "some embodiments", "an example", "some embodiments", or "preferred embodiment" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0174] The embodiments of the present invention are described in detail above. However, aspects of the present invention are not limited to the above embodiments. Various modifications and substitutions may be applied to the above embodiments without departing from the scope of the present invention.

Claims

1. A solar cell, wherein: The solar cell comprises a silicon substrate, a first region and a second region are distributed on the surface of the silicon substrate, the first region comprises a first doping layer, and the second region comprises a second doping layer; The solar cell further includes a group of graphic marking structures, and at least one of the graphic marking structures is a structure directly formed by the first doping layer or the second doping layer, or a structure completely or partially enclosed by the first doping layer or the second doping layer.

2. The solar cell according to claim 1, wherein: The group of graphical mark structures includes: one or more first graphical mark structures and one or more second graphical mark structures, wherein the first graphical mark structures and the second graphical mark structures are different.

3. The solar cell according to claim 2, wherein: The first patterned mark structure and the second patterned mark structure are different in at least one of shape, size, color, arrangement, and height between the first patterned mark structure and a reference plane of the silicon substrate.

4. The solar cell according to claim 2, wherein: The first graphical marking structure is in a square shape, an irregular shape, a straight line shape, a curved line shape, an elliptical shape, or a polygonal shape; The second graphical marking structure is in a square shape, an irregular shape, a straight line shape, a curved line shape, an elliptical shape, or a polygonal shape.

5. The solar cell according to claim 2, wherein: The first patterned marking structure is an at least partially independent or completely independent first doped layer block structure directly formed by the first doped layer; Furthermore, the second patterned mark structure is a recessed structure completely or partially surrounded by the second doping layer.

6. The solar cell according to claim 2, wherein: The first patterned mark structure and the second patterned mark structure have different heights relative to a reference plane of the silicon substrate.

7. The solar cell according to claim 6, wherein: A height difference between a height H1 between the first patterned mark structure and a reference plane of the silicon substrate and a height H2 between the second patterned mark structure and the reference plane of the silicon substrate is greater than 10 nanometers and less than 2000 nanometers.

8. The solar cell according to claim 1, wherein: The group of graphical marking structures is formed at two different positions of the following positions: the first area, the second area, the battery cell separation area, the battery cell edge area; or, respectively located at two different edge areas of the battery cell; or, respectively located at both sides of the battery cell.

9. The solar cell according to any one of claims 1 to 8, wherein: The solar cell has a plurality of busbar structures, which are spaced apart along a first direction and extend along a second direction; wherein the group of graphical marking structures is formed between two of the busbar structures adjacent to two battery cell edges in the first direction of the battery.

10. The solar cell according to any one of claims 1 to 8, wherein: In the first direction, the distance between the two battery cell edges of the battery is L, and the distance between at least one of the group of graphic marking structures and the adjacent battery cell edge is greater than 11. A photovoltaic module, wherein: The photovoltaic module comprises the solar cell according to any one of claims 1 to 10, and an encapsulation layer, wherein the encapsulation layer covers the surface of the solar cell.

12. A solar cell tracing method, wherein: The tracing method comprises the following steps: forming a first graphical marking structure for marking a machine of a process before forming the first graphical marking structure; forming a second graphical marking structure for marking a machine for a process between forming the first graphical marking structure and forming the second graphical marking structure; Acquire information of the first graphical mark structure and the second graphical mark structure; Wherein, at least one graphic mark structure is a structure directly formed by the first doping layer or the second doping layer, or a structure completely or partially surrounded by the first doping layer or the second doping layer.

13. The tracing method according to claim 12, wherein: The tracing method further comprises the steps of: Based on the information of the first graphical marking structure and the second graphical marking structure obtained, the test performance data of the solar cell obtained by the performance testing system, and the preset mapping relationship, determining the matching relationship between the test performance data and the machine; The mapping relationship specifies information about the first graphical marking structure and the second graphical marking structure corresponding to the machine.

14. The tracing method according to claim 12 or 13, wherein: After performing the step of acquiring information of the first graphical marking structure and the second graphical marking structure, the tracing method further comprises the steps of: Transmitting the obtained information of the first graphical marking structure and the second graphical marking structure to a performance testing system, wherein the performance testing system is used to output test performance data; Comparing the test performance data with pre-stored standard performance data respectively to determine whether there is any test performance data that does not match the standard performance data; When there is test performance data that does not match the standard performance data, output information of the first graphical marking structure and the second graphical marking structure corresponding to the test performance data that does not match the standard performance data; The machine corresponding to the information of the first graphical mark structure and the second graphical mark structure is determined according to a preset mapping relationship, wherein the mapping relationship specifies the information of the first graphical mark structure and the second graphical mark structure corresponding to the machine.

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